WO2018227958A1 - 掩膜板模组、膜层的制作方法及有机电致发光显示面板的制作方法 - Google Patents
掩膜板模组、膜层的制作方法及有机电致发光显示面板的制作方法 Download PDFInfo
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- WO2018227958A1 WO2018227958A1 PCT/CN2018/071944 CN2018071944W WO2018227958A1 WO 2018227958 A1 WO2018227958 A1 WO 2018227958A1 CN 2018071944 W CN2018071944 W CN 2018071944W WO 2018227958 A1 WO2018227958 A1 WO 2018227958A1
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims description 46
- 239000010408 film Substances 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 11
- 238000007740 vapor deposition Methods 0.000 claims description 10
- 238000005401 electroluminescence Methods 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000000295 complement effect Effects 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 7
- 239000002346 layers by function Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
- B23K26/0661—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks disposed on the workpiece
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Definitions
- the present disclosure relates to the field of display technologies, and in particular, to a mask module, a method for fabricating a film, an organic electroluminescence display panel, and a method for fabricating the same.
- the display area (AA) of a conventional organic electroluminescent display panel (OLED) screen is typically a regular pattern such as a rectangle.
- the display area of the OLED screen is also required to make special irregular graphics, such as a specific logo display, and for example, a borderless screen to display the camera, the earpiece, etc. in the display area also needs to be displayed.
- connection structure connection structure
- embodiments of the present disclosure provide a mask module, a method for fabricating a film, an organic electroluminescence display panel, and a manufacturing method thereof, to solve the problem of an existing open mask for an island pattern. Connection problem.
- an embodiment of the present disclosure provides a mask module for fabricating a display substrate, the display substrate having at least one display area, the display area having at least one island pattern, the mask pattern
- the group includes at least two open masks; each of the open masks has an open area corresponding to at least one of the display areas; and each of the open masks corresponding to the same display area
- the open areas of the open masks do not overlap each other, and each of the open masks is spliced to form a split interface and a cover structure, the shape of the interface is consistent with the display area, and the shape and structure of the cover structure
- the island image is consistent.
- an open area of each of the open masks corresponding to the same display area constitutes a complementary pattern.
- a splicing edge between open areas of each of the open masks corresponding to the same display area corresponds to a gap between the light-emitting areas of each pixel in the display area.
- the shape of the splicing edge between the open areas of each of the open masks corresponding to the same display area is Curve or polyline.
- the splicing edge between the open areas of each of the open masks corresponding to the same display area has a grating Complementary structure.
- the splicing edge between the open areas of each of the open masks corresponding to the same display area has a strip The structure, and the strip structure between the two splice edges constitutes the interdigitated structure.
- the splicing edge between the open areas of each of the open masks corresponding to the same display area has a half Evaporation structure.
- a splicing edge region between open areas of each of the open masks corresponding to the same display area is The thickness of the mask is smaller than the thickness at the other regions, and the stitching edge region is thinned in thickness on the side facing the substrate to be evaporated.
- the thickness reduction ratio at the splicing edge region is 20%-50%.
- the number of the open masks is two.
- an embodiment of the present disclosure further provides a method for fabricating a film layer, including:
- Each of the open masks in the mask module provided by the embodiment of the present disclosure is used as an occlusion pattern, and the same mother board is vapor-deposited with the same material to correspond to each display substrate in the motherboard.
- An evaporation film layer having an island pattern is formed at the display area.
- the vapor deposition film layer is an organic light-emitting functional film layer, a cathode layer or a thin film encapsulating functional layer.
- an embodiment of the present disclosure further provides a method for fabricating an organic electroluminescent display panel, including the method for fabricating the above-mentioned film layer provided by the embodiments of the present disclosure.
- an embodiment of the present disclosure further provides an organic electroluminescent display panel fabricated by the above manufacturing method, comprising: a film layer formed in a display area, each of the film layers having overlapping hollow regions to The display area forms an island pattern.
- a camera or an earpiece is disposed at the island figure; or the island figure is a set identification pattern.
- a mask module, a method for fabricating a film, an organic electroluminescence display panel and a manufacturing method thereof are provided by using an embodiment of the present disclosure, and a plurality of open masks are used to replace an existing open mask.
- the display area there is a film layer with an island pattern, and the open areas of the open masks do not overlap each other and the open areas are spliced to form an occlusion structure conforming to the shape of the display area and the occlusion structure conforming to the island pattern, thus ensuring
- the open area of each open mask does not include a connection structure connecting the occlusion patterns to the edges.
- the above-mentioned open masks are sequentially used as occlusion patterns, and the same mother board is vapor-deposited with the same material, and an evaporation film layer having an island pattern can be formed in the display area corresponding to each display substrate in the mother board, so that The pattern of the shielding film layer is not affected by the connection structure, and therefore, an organic light-emitting display panel including at least one island pattern can be fabricated as needed.
- 1 and 2 are schematic structural views of a mask in the prior art
- FIG. 3 is a schematic structural diagram of a mask module according to an embodiment of the present disclosure.
- FIG. 4A and FIG. 4B are schematic diagrams respectively showing display areas corresponding to open areas in a mask module according to an embodiment of the present disclosure
- FIG. 5 is a partial schematic structural diagram of a mask module according to an embodiment of the present disclosure.
- FIG. 6 is a schematic diagram of a mask of a mask in a mask module according to an embodiment of the present disclosure.
- the light-emitting functional layer (EL) organic material is vapor-deposited using an open mask, that is, a mask with a window.
- the open mask is provided with an opening A, that is, a hollow area, at a position corresponding to the display area of each display substrate, and there is no metal shielding at the opening A, which is used for vapor deposition of an organic material.
- the open mask needs to have a metal occlusion pattern B corresponding to the occlusion pattern in the opening A, so that the metal occlusion pattern B and the edge of the opening A are formed.
- the connection structure C, the connection structure C will block part of the display area, so the conventional open mask can not correspond to the production of the shaped display.
- An embodiment of the present disclosure provides a mask module, as shown in FIG. 3, comprising: at least two open masks 100 and 200; each of the open masks 100 and 200 having at least one display substrate
- the open areas 101 and 201 corresponding to the display area are one-to-one; after the open masks 100 and 200 are spliced, the open areas 101 and 201 do not overlap each other, forming a joint interface a conforming to the shape of the display area and an occlusion structure consistent with the island pattern b.
- a mask module composed of a plurality of open masks 100 and 200 is used instead of the existing open mask to be fabricated in the display area.
- the film layer having the island pattern, the open areas 101 and 201 of each of the open masks 100 and 200 do not overlap each other, and the openings 101 and 201 are spliced to form a pattern having the display area of the island pattern, which ensures
- the open areas 101 and 201 of each of the open masks 100 and 200 do not include a connection structure to the edge-blocking pattern.
- each of the open masks 100 and 200 described above is sequentially used as a occlusion pattern, and the same mother board is subjected to vapor deposition of the same material, and an evaporation film having an island pattern can be formed in the display area corresponding to each display substrate in the mother board.
- the layer is such that the pattern of the mask layer formed is not affected by the connection structure, and therefore, an organic light-emitting display panel including at least one island pattern can be fabricated as needed.
- the organic light-emitting display panel has no film layer pattern at the island pattern, that is, the island pattern is not used as a display, and the camera or the earpiece can be set, and the island pattern can be made into a specific logo pattern to realize the special-shaped display. .
- FIG. 3 in the above-mentioned mask module provided by the embodiment of the present disclosure constitutes a mask module by two open masks 100 and 200, and each of the open masks 100 and 200
- the description is made by making three display substrates, that is, having three open areas, and FIG. 3 only shows the case where there is only one occlusion structure b in the splicing interface a.
- the size of the mask module can be set according to actual needs to make a different number of display substrates, and a plurality of shielding structures b can be disposed in the assembling interface a as needed, and the shielding structure b is not limited. shape.
- the plurality of open masks 100 and 200 may be configured to form a mask module according to actual needs without being limited by the number and shape of the shielding structure b.
- the more the number of open masks 100 and 200 that constitute the mask module the more unfavorable the production cost and production efficiency are saved. Therefore, in the above-mentioned mask module provided by the embodiment of the present disclosure, it is preferable to select two open masks 100 and 200 to satisfy the fabrication of the interface a having the plurality of shielding structures b. demand. Therefore, the following is based on the example in which the two mask masks 100 and 200 are used as the mask module as shown in FIG.
- the interface does not include any occlusion structure b.
- the interface a needs to be divided along the edge of the occlusion structure b.
- the open areas 101 and 201 of each of the open reticle boards 100 and 200 block a part of the occlusion structure b, so that the same interface
- the open areas 101 and 201 of the respective open masks 100 and 200 corresponding to a constitute a complementary pattern.
- the same material is steamed for the same mother board by sequentially using the above-mentioned open masks 100 and 200 as occlusion patterns.
- a vapor deposition film layer having a shielding structure b may be formed at the interface a corresponding to each display substrate in the mother board, so that the pattern of the mask film layer produced is not affected by the connection structure.
- a plurality of materials are vapor-deposited at the splicing edge d between the open areas 101 and 201 of the respective open masks 100 and 200 corresponding to the same piece a, subject to the pair of open masks 100 and 200.
- the influence of the bit precision and the manufacturing precision is likely to cause unevenness of the produced film layer at the splicing edge d, which affects the display problem.
- the following three methods can be used to improve the above problem. These three methods can be used at the same time or alternatively, and are not limited herein. The three methods are described in detail below.
- each open mask 100 corresponding to the same interface a can be used.
- the splicing edge d between the open areas 101 and 201 of 200 and 200 is correspondingly disposed at a gap between the pixel light-emitting areas c in the splicing interface a, so that even if the film layer formed at the splicing edge d is uneven It does not affect the normal illumination of the light-emitting area c of each pixel.
- the splicing edge d may be a curve as shown in FIG. 4A, a fold line as shown in FIG. 4B, or a straight line, which is not limited herein.
- the second mode in the specific implementation, in the above mask module provided by the embodiment of the present disclosure, as shown in FIG. 5, the open areas of the open masks 100 and 200 corresponding to the same interface a
- the splicing edge d between 101 and 201 has a grating complementary structure, which can produce a grating-like diffraction effect on the light transmitted through the mask, so that the film thickness transition at the splicing edge d is more uniform.
- the edge d may have a strip-like structure such that the strip-like structure at the splice edge d between the open areas 101 and 201 of each of the open masks 100 and 200 can produce a grating-like diffraction to the light transmitted through the mask.
- the strip structure between the two splice edges d may constitute a finger-finger structure to ensure that the open areas 101 and 201 constitute a complementary pattern.
- the third mode in the specific implementation, in the above mask module provided by the embodiment of the present disclosure, as shown in FIG. 6, the open areas of the open masks 100 and 200 corresponding to the same interface a
- the splicing edge d between 101 and 201 has a semi-evaporation structure, which forms a gap between the open reticle 100 and 200 and the display substrate 300 to be evaporated, and a part of the evaporation material is deposited along the void to the semi-vapor-deposited structure. Below, the film thickness transition at the splicing edge d is more uniform.
- the specific implementation manner of the semi-vapor deposition structure of the splicing edge d is various, for example, as shown in FIG. 6 , corresponding to the same interface a
- the thickness of the mask 101 at the splice edge d between the open areas 101 and 201 of each of the open masks 100 and 200 is smaller than the thickness at the other areas, and the splice edge d area is at the surface facing the substrate 300 to be vapor-deposited.
- the side thickness is thinned to form a gap between the open masks 100 and 200 and the display substrate 300 to be evaporated, and a portion of the vapor deposition material is deposited along the voids below the semi-vapor deposition structure.
- the thickness reduction ratio at the region of the splicing edge d may be 20%-50%, and the thinning ratio may be adjusted according to specific conditions and processes to ensure the splicing edge.
- the film thickness is evenly transitioned.
- an embodiment of the present disclosure further provides a method for fabricating a film layer, which is implemented by:
- Each of the open masks in the mask module provided by the embodiment of the present disclosure is used as an occlusion pattern, and the same mother board is vapor-deposited with the same material to display a display area corresponding to each display substrate in the motherboard.
- a vapor deposited film layer having an island pattern is formed.
- the pattern of the mask layer formed is not affected by the connection structure, and therefore, an organic light-emitting display panel including at least one non-display island pattern can be fabricated as needed.
- the vapor deposited film layer may be an organic light-emitting functional film layer such as a white light emitting layer, a hole transport layer, an electron transport layer, or the like, or may be a cathode layer.
- the functional layer may be encapsulated in a film, which is not limited herein.
- an embodiment of the present disclosure further provides a method for fabricating an organic electroluminescent display panel, including the method for fabricating the above-mentioned film layer provided by the embodiments of the present disclosure. Since the above-mentioned open masks are sequentially used as the occlusion pattern, the same mother board is subjected to vapor deposition of the same material, and a vapor deposition film layer having an island pattern can be formed in the display area corresponding to each display substrate in the mother board, thereby making The pattern of the masking film layer is not affected by the connection structure, and therefore, an organic light-emitting display panel including at least one island pattern can be fabricated as needed.
- an embodiment of the present disclosure further provides an organic electroluminescence display panel fabricated by the above method for fabricating an organic electroluminescence display panel, comprising: a film layer formed in a display region, each film layer having a mutual Overlapping hollowed out areas to form an island pattern in the display area.
- the organic electroluminescent display panel produced by the above manufacturing method does not have any film layer pattern at the island pattern, so that a camera or an earpiece can be disposed at the island pattern, that is, some of the frames currently set at the display device.
- the functional device is placed in the display area to achieve a narrow bezel or no border display device design.
- the island graphics can be set to identify graphics to achieve the desired profile display.
- the mask module, the organic electroluminescence display panel and the manufacturing method thereof provided by the embodiments of the present disclosure use a plurality of open masks instead of the existing one open mask to form an island pattern in the display area.
- the open areas of the open masks do not overlap each other and the openings of the open areas form a pattern of the display area having the island pattern, so that the open areas of the open masks are not included.
- An occlusion pattern that needs to be connected to the edge through the connection structure.
- the above-mentioned open masks are sequentially used as occlusion patterns, and the same mother board is vapor-deposited with the same material, and an evaporation film layer having an island pattern can be formed in the display area corresponding to each display substrate in the mother board, so that The pattern of the shielding film layer is not affected by the connection structure, and therefore, an organic light-emitting display panel including at least one island pattern can be fabricated as needed.
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Abstract
一种掩膜板模组,用于制作一显示基板(300),显示基板(300)具有至少一个显示区,显示区内具有至少一个孤岛图形,掩膜板模组包括至少两块开放式掩膜板(100, 200);各开放式掩膜板(100, 200)具有与至少一个显示区一一对应的开口区(101, 201);与同一显示区对应的各开放式掩膜板(100, 200)的开口区(101, 201)之间互不重叠,且各开放式掩膜板(100, 200)拼接后构成一拼接口(a)和一遮挡结构(b),拼接口(a)的形状与显示区(101, 201)一致,遮挡结构(b)的形状与孤岛图形一致。还公开了一种膜层的制作方法,一种有机电致发光显示面板的制作方法和一种有机电致发光显示面板。
Description
交叉引用
本公开要求于2017年6月16日提交的申请号为201710459217.2的中国专利申请的优先权,该中国专利申请的全部内容通过引用全部并入本文。
本公开涉及显示技术领域,尤其涉及一种掩膜板模组、膜层的制作方法、有机电致发光显示面板及其制作方法。
常规的有机电致发光显示面板(OLED)屏幕的显示区(AA)通常是诸如矩形的规则图形。为应对特殊需求,OLED屏幕的显示区也被要求能做成特殊的不规则的图形,比如特定的logo显示,再比如无边框屏幕要将摄像头、听筒等放置在显示区也需要异形显示。
连接结构连接结构
公开内容
有鉴于此,本公开实施例提供了一种掩膜板模组、膜层的制作方法、有机电致发光显示面板及其制作方法,用以解决现有的开放式掩膜板对于孤岛图形的连接问题。
因此,本公开实施例提供了一种掩膜板模组,用于制作一显示基板,所述显示基板具有至少一个显示区,所述显示区内具有至少一个孤岛图形,所述掩膜板模组包括至少两块开放式掩膜板;各所述开放式掩膜板具有与至少一个所述显示区一一对应的开口区;与同一所述显示区对应的各所述开放式掩膜板的开口区之间互不重叠,且各所述开放式掩膜板拼接后构成一拼接口和一遮挡结构,所述拼接口的形状与所述显示区一致,所述遮挡结构的形状与所述孤岛图形一致。
在一种可能的实现方式中,在本公开实施例提供的上述掩膜板模组中,与同一所述显示区对应的各所述开放式掩膜板的开口区构成互补图形。
在一种可能的实现方式中,在本公开实施例提供的上述掩膜板模组中,与同一所述显示区对应的各所述开放式掩膜板的开口区之间的拼接边缘对应于所述显示区内的各像 素发光区之间的间隙处。
在一种可能的实现方式中,在本公开实施例提供的上述掩膜板模组中,与同一所述显示区对应的各所述开放式掩膜板的开口区之间的拼接边缘形状为曲线或折线。
在一种可能的实现方式中,在本公开实施例提供的上述掩膜板模组中,与同一所述显示区对应的各所述开放式掩膜板的开口区之间的拼接边缘具有光栅互补结构。
在一种可能的实现方式中,在本公开实施例提供的上述掩膜板模组中,与同一所述显示区对应的各所述开放式掩膜板的开口区之间的拼接边缘具有条状结构,且两个拼接边缘之间的条状结构构成插指结构。
在一种可能的实现方式中,在本公开实施例提供的上述掩膜板模组中,与同一所述显示区对应的各所述开放式掩膜板的开口区之间的拼接边缘具有半蒸镀结构。
在一种可能的实现方式中,在本公开实施例提供的上述掩膜板模组中,与同一所述显示区对应的各所述开放式掩膜板的开口区之间的拼接边缘区域处的掩膜板厚度小于其他区域处的厚度,且所述拼接边缘区域处在面向待蒸镀显示基板的一侧厚度减薄。
在一种可能的实现方式中,在本公开实施例提供的上述掩膜板模组中,所述拼接边缘区域处的厚度减薄比例为20%-50%。
在一种可能的实现方式中,在本公开实施例提供的上述掩膜板模组中,所述开放式掩膜板的数量为两个。
另一方面,本公开实施例还提供了一种膜层的制作方法,包括:
依次采用本公开实施例提供的上述掩膜板模组中的各开放式掩膜板作为遮挡图形,对同一母板进行相同材料的蒸镀,以在所述母板中对应于各显示基板的显示区处形成具有孤岛图形的蒸镀膜层。
在一种可能的实现方式中,在本公开实施例提供的上述制作方法中,所述蒸镀膜层为有机发光功能膜层、阴极层或薄膜封装功能层。
另一方面,本公开实施例还提供了一种有机电致发光显示面板的制作方法,包括本公开实施例提供的上述膜层的制作方法。
另一方面,本公开实施例还提供了一种采用上述制作方法制作的有机电致发光显示面板,包括:在显示区形成的各膜层,各所述膜层具有相互重叠的镂空区域以在所述显示区形成孤岛图形。
在一种可能的实现方式中,在本公开实施例提供的上述有机电致发光显示面板中,在所述孤岛图形处设置有摄像头或听筒;或所述孤岛图形为设定的标识图形。
本公开实施例的有益效果包括:
本公开实施例提供的一种掩膜板模组、膜层的制作方法、有机电致发光显示面板及其制作方法,采用多块开放式掩膜板代替现有的一块开放式掩膜板制作在显示区具有孤岛图形的膜层,各开放式掩膜板的开口区之间互不重叠且各开口区拼接后构成与显示区形状一致拼接口和与孤岛图形一致的遮挡结构,这样可以保证各开放式掩膜板的开口区内不会包含与边缘连接遮挡图案的连接结构。依次采用上述各开放式掩膜板作为遮挡图形,对同一母板进行相同材料的蒸镀,可以在母板中对应于各显示基板的显示区处形成具有孤岛图形的蒸镀膜层,使得制作出的遮挡膜层的图案不受连接结构的影响,因此,可以根据需求制作出包含至少一个孤岛图形的有机发光显示面板。
图1和图2为现有技术中的掩膜板的结构示意图;
图3为本公开实施例提供的掩膜板模组的结构示意图;
图4A和图4B分别为本公开实施例提供的掩膜板模组中开口区对应的显示区的示意图;
图5为本公开实施例提供的掩膜板模组的局部结构示意图;
图6为本公开实施例提供的掩膜板模组中一个掩膜板的掩膜示意图。
现在将参考附图更全面地描述示例实施方式。然而,示例实施方式能够以多种形式实施,且不应被理解为限于在此阐述的实施方式;相反,提供这些实施方式使得本公开将全面和完整,并将示例实施方式的构思全面地传达给本领域的技术人员。图中相同的附图标记表示相同或类似的结构,因而将省略它们的详细描述。
虽然本说明书中使用相对性的用语,例如“上”“下”来描述图标的一个组件对于另一组件的相对关系,但是这些术语用于本说明书中仅出于方便,例如根据附图中所述的示例的方向。能理解的是,如果将图标的装置翻转使其上下颠倒,则所叙述在“上”的组件将会成为在“下”的组件。当某结构在其它结构“上”时,有可能是指某结构一体形成于其它结构上,或指某结构“直接”设置在其它结构上,或指某结构通过另一结构“间接”设置在其它结构上。
用语“一个”、“一”、“该”、“所述”用以表示存在一个或多个要素/组成部分/等;用语 “包括”和“具有”用以表示开放式的包括在内的意思并且是指除了列出的要素/组成部分/等之外还可存在另外的要素/组成部分/等;用语“第一”、“第二”等仅作为标记使用,不是对其对象的数量限制。
通常,在OLED制作过程中,发光功能层(EL)有机材料的蒸镀是采用开放式掩膜板(Open Mask),即带有窗口的掩膜板。如图1所示,开放式掩膜板在与各显示基板的显示区对应的位置设置开口A即镂空区域,在该开口A处无金属遮挡,其用于蒸镀有机材料。当显示区域需要制作孤岛图形时,如图2所示,开放式掩膜板需要在开口A内设置对应遮挡孤岛图形的金属遮挡图案B,因此,会产生连接金属遮挡图案B和开口A边缘的连接结构C,连接结构C会遮挡部分显示区,故常规的开放式掩膜板无法对应异形显示的制作。
下面结合附图,对本公开实施例提供的掩膜板模组、有机电致发光显示面板及其制作方法的具体实施方式进行详细地说明。
附图中各区域的形状和大小不反映掩膜模组的真实比例,目的只是示意说明本公开内容。
本公开实施例提供了一种掩膜板模组,如图3所示,包括:至少两块开放式掩膜板100和200;各开放式掩膜板100和200具有与至少一个显示基板的显示区一一对应的开口区101和201;开放式掩膜板100和200拼接后,开口区101和201互不重叠,形成与显示区形状一致的拼接口a和与孤岛图形一致的遮挡结构b。
具体地,在本公开实施例提供的上述掩膜板模组中,采用多块开放式掩膜板100和200构成的掩膜板模组代替现有的一块开放式掩膜板制作在显示区具有孤岛图形的膜层,各开放式掩膜板100和200的开口区101和201之间互不重叠且各开口区101和201拼接后构成具有该孤岛图形的显示区的图形,这样可以保证各开放式掩膜板100和200的开口区101和201内不会包含与边缘连接遮挡图案的连接结构。这样,依次采用上述各开放式掩膜板100和200作为遮挡图形,对同一母板进行相同材料的蒸镀,可以在母板中对应于各显示基板的显示区处形成具有孤岛图形的蒸镀膜层,使得制作出的遮挡膜层的图案不受连接结构的影响,因此,可以根据需求制作出包含至少一个孤岛图形的有机发光显示面板。
值得注意的是,有机发光显示面板在孤岛图形处无膜层图案,即孤岛图形处不作为显示,可以设置摄像头或听筒,还可以将孤岛图形制作成具体的标志图形(logo)以实现异形显示。
具体地,在本公开实施例提供的上述掩膜板模组中的图3是以两块开放式掩膜板100和200构成掩膜板模组,并且每块开放式掩膜板100和200用于制作三个显示基板,即具有三个开口区为例进行说明的,且图3仅示出了在拼接口a内仅具有一个遮挡结构b的情况。在具体实施时,可以根据实际需要设置掩膜板模组的尺寸以制作不同个数的显示基板,且可以根据需要在拼接口a内设置多个遮挡结构b,且并不限定遮挡结构b的形状。并且,可以不受遮挡结构b的数量和形状的限制,根据实际需要设置多块开放式掩膜板100和200构成掩膜板模组。但选用的构成掩膜板模组的开放式掩膜板100和200数量越多,越不利于节省生产制作成本和生产效率。因此,较佳地,在本公开实施例提供的上述掩膜板模组中,选用两块开放式掩膜板100和200为佳,即可满足制作具有多个遮挡结构b的拼接口a的需求。因此,下面均是基于如图3所示的采用两块开放式掩膜板100和200构成掩膜板模组为例进行说明。
在具体实施时,在本公开实施例提供的上述掩膜板模组中,如图3所示,为了保证各开放式掩膜板100和200的开口区101和201为一完整镂空图形即拼接口,内部不包含任何遮挡结构b,需要将拼接口a沿遮挡结构b边缘进行分割,各开放式掩膜板100和200的开口区101和201遮挡一部分遮挡结构b,这样,与同一拼接口a对应的各开放式掩膜板100和200的开口区101和201就会构成互补图形。
在具体实施时,采用本公开实施例提供的上述掩膜板模组制作膜层图案时,由于依次采用上述各开放式掩膜板100和200作为遮挡图形,对同一母板进行相同材料的蒸镀,可以在母板中对应于各显示基板的拼接口a处形成具有遮挡结构b的蒸镀膜层,使得制作出的遮挡膜层的图案不受连接结构的影响。但是在与同一拼接口a对应的各开放式掩膜板100和200的开口区101和201之间的拼接边缘d处会蒸镀多次材料,受到各开放式掩膜板100和200的对位精度和制作精度的影响,在拼接边缘d处很容易出现制作出的膜层不均一而影响显示的问题。
基于此,在具体实施时,在本公开实施例提供的上述掩膜板模组中,可以采用下述三种方式改善上述问题。这三种方式可以同时采用,也可以择一采用,在此不做限定。下面对这三种方式进行详细介绍。
第一种方式:在具体实施时,在本公开实施例提供的上述掩膜板模组中,如图4A和图4B所示,可以将与同一拼接口a对应的各开放式掩膜板100和200的开口区101和201之间的拼接边缘d,对应设置于拼接口a内的各像素发光区c之间的间隙处,这样,即使在拼接边缘d处制作出的膜层不均匀也不会影响到各像素发光区c的正常发光。
具体地,在本公开实施例提供的上述掩膜板模组中,根据各像素发光区c的排列方式,与同一拼接口a对应的各开放式掩膜板100和200的开口区101和201之间的拼接边缘d可以为如图4A所示的曲线,也可以为如图4B所示的折线,还可以为直线,在此不做限定。
第二种方式:在具体实施时,在本公开实施例提供的上述掩膜板模组中,如图5所示,与同一拼接口a对应的各开放式掩膜板100和200的开口区101和201之间的拼接边缘d具有光栅互补结构,可以对掩膜时透过的光产生类似于光栅衍射的作用,使拼接边缘d处膜厚过渡更均匀。
具体地,在本公开实施例提供的上述掩膜板模组中,如图5所示,与同一拼接口a对应的各开放式掩膜板100和200的开口区101和201之间的拼接边缘d可以具有条状结构,使各开放式掩膜板100和200的开口区101和201之间的拼接边缘d处的条状结构可以对掩膜时透过的光产生类似于光栅衍射的作用,而两个拼接边缘d之间的条状结构可以构成插指结构,以保证开口区101和201构成互补图形。
第三种方式:在具体实施时,在本公开实施例提供的上述掩膜板模组中,如图6所示,与同一拼接口a对应的各开放式掩膜板100和200的开口区101和201之间的拼接边缘d具有半蒸镀结构,使开放式掩模板100和200与待蒸镀显示基板300之间形成空隙,有一部分蒸镀材料会沿着空隙沉积到半蒸镀结构下方,使拼接边缘d处膜厚过渡更均匀。
具体地,在本公开实施例提供的上述掩膜板模组中,拼接边缘d的半蒸镀结构的具体实现方式有多种,例如可以如图6所示,将与同一拼接口a对应的各开放式掩膜板100和200的开口区101和201之间的拼接边缘d处的掩膜板101厚度小于其他区域处的厚度,且拼接边缘d区域处在面向待蒸镀基板300的一侧厚度减薄,使开放式掩模板100和200与待蒸镀显示基板300之间形成空隙,有一部分蒸镀材料会沿着空隙沉积到半蒸镀结构下方。
具体地,在本公开实施例提供的上述掩膜板模组中,拼接边缘d区域处的厚度减薄比例可以为20%-50%,减薄比例可视具体情况和工艺调整,确保拼接边缘膜厚均匀过渡。
基于同一公开构思,本公开实施例还提供了一种膜层的制作方法,通过以下方式实现:
依次采用本公开实施例提供的上述掩膜板模组中的各开放式掩膜板作为遮挡图形, 对同一母板进行相同材料的蒸镀,以在母板中对应于各显示基板的显示区处形成具有孤岛图形的蒸镀膜层。使得制作出的遮挡膜层的图案不受连接结构的影响,因此,可以根据需求制作出包含至少一个非显示的孤岛图形的有机发光显示面板。
在具体实施时,在本公开实施例提供的上述制作方法中,蒸镀膜层可以为诸如白光发光层、空穴传输层、电子传输层等的有机发光功能膜层,也可以为阴极层,还可以为薄膜封装功能层,在此不做限定。
基于同一公开构思,本公开实施例还提供了一种有机电致发光显示面板的制作方法,包括本公开实施例提供的上述膜层的制作方法。由于依次采用上述各开放式掩膜板作为遮挡图形,对同一母板进行相同材料的蒸镀,可以在母板中对应于各显示基板的显示区处形成具有孤岛图形的蒸镀膜层,使得制作出的遮挡膜层的图案不受连接结构的影响,因此,可以根据需求制作出包含至少一个孤岛图形的有机发光显示面板。
基于同一公开构思,本公开实施例还提供了一种采用上述有机电致发光显示面板的制作方法制作的有机电致发光显示面板,包括:在显示区形成的各膜层,各膜层具有相互重叠的镂空区域以在显示区形成孤岛图形。
具体地,采用上述制作方法制作出的有机电致发光显示面板具有的孤岛图形处不具备任何膜层图案,这样可以在孤岛图形处设置摄像头或听筒,即将目前设置于显示装置的边框处的一些功能器件设置在显示区,以实现窄边框或无边框的显示装置设计。或者也可以将孤岛图形设定为标识图形,以实现所需的异形显示。
本公开实施例提供的上述掩膜板模组、有机电致发光显示面板及其制作方法,采用多块开放式掩膜板代替现有的一块开放式掩膜板制作在显示区具有孤岛图形的膜层,各开放式掩膜板的开口区之间互不重叠且各开口区拼接后构成具有该孤岛图形的显示区的图形,这样可以保证各开放式掩膜板的开口区内不会包含需要通过连接结构与边缘连接的遮挡图案。依次采用上述各开放式掩膜板作为遮挡图形,对同一母板进行相同材料的蒸镀,可以在母板中对应于各显示基板的显示区处形成具有孤岛图形的蒸镀膜层,使得制作出的遮挡膜层的图案不受连接结构的影响,因此,可以根据需求制作出包含至少一个孤岛图形的有机发光显示面板。
以上所述,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本公开揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本公开的保护范围之内。因此,本公开的保护范围应以所述权利要求的保护范围为准。
Claims (15)
- 一种掩膜板模组,所述掩膜板模组用于制作一显示基板,所述显示基板具有至少一个显示区,所述显示区内具有至少一个孤岛图形,所述掩膜板模组包括至少两块开放式掩膜板;各所述开放式掩膜板具有与至少一个所述显示区一一对应的开口区;与同一所述显示区对应的各所述开放式掩膜板的开口区之间互不重叠,且各所述开放式掩膜板拼接后构成一拼接口和一遮挡结构,所述拼接口的形状与所述显示区一致,所述遮挡结构的形状与所述孤岛图形一致。
- 如权利要求1所述的掩膜板模组,其中,与同一所述显示区对应的各所述开放式掩膜板的开口区构成互补图形。
- 如权利要求1所述的掩膜板模组,其中,与同一所述显示区对应的各所述开放式掩膜板的开口区之间的拼接边缘对应于所述显示区内的各像素发光区之间的间隙处。
- 如权利要求1所述的掩膜板模组,其中,与同一所述显示区对应的各所述开放式掩膜板的开口区之间的拼接边缘形状为曲线或折线。
- 如权利要求1所述的掩膜板模组,其中,与同一所述显示区对应的各所述开放式掩膜板的开口区之间的拼接边缘具有光栅互补结构。
- 如权利要求5所述的掩膜板模组,其中,与同一所述显示区对应的各所述开放式掩膜板的开口区之间的拼接边缘具有条状结构,且两个拼接边缘之间的条状结构构成插指结构。
- 如权利要求1所述的掩膜板模组,其中,与同一所述显示区对应的各所述开放式掩膜板的开口区之间的拼接边缘具有半蒸镀结构。
- 如权利要求7所述的掩膜板模组,其中,与同一所述显示区对应的各所述开放式掩膜板的开口区之间的拼接边缘区域处的掩膜板厚度小于其他区域处的厚度,且所述拼接边缘区域处在面向待蒸镀显示基板的一侧厚度减薄。
- 如权利要求8所述的掩膜板模组,其中,所述拼接边缘区域处的厚度减薄比例为20%-50%。
- 如权利要求1-9任一项所述的掩膜板模组,其中,所述开放式掩膜板的数量为两个。
- 一种膜层的制作方法,包括:依次采用如权利要求1-10任一项所述的掩膜板模组中的各开放式掩膜板作为遮挡图 形,对同一母板进行相同材料的蒸镀,以在所述母板中对应于各显示基板的显示区处形成具有孤岛图形的蒸镀膜层。
- 如权利要求11所述的制作方法,其中,所述蒸镀膜层为有机发光功能膜层、阴极层或薄膜封装功能层。
- 一种有机电致发光显示面板的制作方法,包括如权利要求11或12所述的膜层的制作方法。
- 一种采用如权利要求13所述的制作方法制作的有机电致发光显示面板,包括:在显示区形成的各膜层,各所述膜层具有相互重叠的镂空区域以在所述显示区形成孤岛图形。
- 如权利要求14所述的有机电致发光显示面板,其中,在所述孤岛图形处设置有摄像头或听筒;或所述孤岛图形为设定的标识图形。
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