WO2018202572A1 - Process for the generation of thin silicon-containing films - Google Patents

Process for the generation of thin silicon-containing films Download PDF

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Publication number
WO2018202572A1
WO2018202572A1 PCT/EP2018/060845 EP2018060845W WO2018202572A1 WO 2018202572 A1 WO2018202572 A1 WO 2018202572A1 EP 2018060845 W EP2018060845 W EP 2018060845W WO 2018202572 A1 WO2018202572 A1 WO 2018202572A1
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compound
group
general formula
tms
process according
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PCT/EP2018/060845
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French (fr)
Inventor
David Dominique Schweinfurth
Lukas Mayr
Daniel WALDMANN
Sabine Weiguny
David Scheschkewitz
Kinga Izabela LESZCZYNSKA
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Basf Se
Universitaet Des Saarlandes
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Publication of WO2018202572A1 publication Critical patent/WO2018202572A1/en

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages
    • C07F7/081—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te
    • C07F7/0812—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te comprising a heterocyclic ring
    • C07F7/0814—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te comprising a heterocyclic ring said ring is substituted at a C ring atom by Si
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages
    • C07F7/081—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

Definitions

  • the present invention is in the field of processes for the generation of thin silicon-containing films on substrates, in particular atomic layer deposition processes.
  • Thin inorganic films serve different purposes such as barrier layers, dielectrics, conducting features, capping, or separation of fine structures.
  • Several methods for the generation of thin inorganic films are known. One of them is the deposition of film forming compounds from the gaseous state on a substrate. Therefore, volatile precursors are required which can be deposited on a substrate and then be transformed into the desired composition in the film.
  • silicon halogenides such as S12CI6, are used for silicon-containing thin films.
  • these compounds are difficult to handle and often leave a significant amount of residual halogens in the film, which is undesirable for some applications.
  • US 8 535 760 discloses a CVD process employing hydrogen or halogen substitued tetrasi- lyldisilene precursors.
  • these precursors are so unstable that they can hardly be handled and do not yield films of sufficient quality.
  • Protchenko et al. disclose in Angewandte Chemie International Edition volume 52 (2013), page 568-571 a silyl substituted silylene compound. However, no indication about the suitability in a vapor process is given.
  • R is an alkyl group, an alkenyl group, an aryl group, or a silyl group
  • X is an olefinic or aromatic group forming a ⁇ bond to the silicon atom
  • Z is a neutral ligand
  • n 1 or 2.
  • the present invention further relates to the use of the compound of general formula (I) or (II), wherein R is an alkyi group, an alkenyl group, an aryl group, or a silyl group,
  • X is an olefinic or aromatic group forming a ⁇ bond to the silicon atom for a film deposition process
  • Z is a neutral ligand
  • n 1 or 2.
  • the present invention further relates to a compound of general formula (I) or (II), wherein R is an alkyi group, an alkenyl group, an aryl group, or a silyl group,
  • X is an olefinic or aromatic group forming a ⁇ bond to the silicon atom
  • Z is a neutral ligand
  • n 1 or 2.
  • R is an alkyi group, an alkenyl group, an aryl group, or a silyl group. It is possible that all R are the same or different to each other, for example two R are the same and one R is different to the other or all three R are different to each other. Preferably, all R are the same. Preferred embodiments of R given below means that at least one of the R is the preferred embodiment, more preferably at least two of the R, in particular all of R.
  • An alkyi group can be linear or branched.
  • Examples for a linear alkyi group are methyl, ethyl, n- propyl, n-butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, n-nonyl, n-decyl.
  • Examples for a branched alkyi group are iso-propyl, iso-butyl, sec-butyl, tert-butyl, 2-methyl-pentyl, 2-ethyl-hexyl, cyclo- propyl, cyclohexyl, indanyl, norbornyl.
  • the alkyi group is a Ci to Cs alkyi group, more preferably a Ci to C6 alkyi group, in particular a Ci to C 4 alkyi group, such as methyl, ethyl, iso- propyl or tert-butyl.
  • Alkyi groups can be substituted, for example by halogens such as F, CI, Br, I, in particular F; by hydroxyl groups; by ether groups; or by amines such as dialkylamines.
  • An alkenyl group contains at least one carbon-carbon double bond.
  • the double bond can include the carbon atom with which the alkenyl group is bound to the rest of the molecule, or it can be placed further away from the place where the alkenyl group is bound to the rest of the molecule, preferably it is placed further away from the place where the alkenyl group is bound to the rest of the molecule.
  • Alkenyl groups can be linear or branched.
  • linear alkenyl groups in which the double bond includes the carbon atom with which the alkenyl group is bound to the rest of the molecule include 1-ethenyl, 1 -propenyl, 1-n-butenyl, 1 -n-pentenyl, 1 -n- hexenyl, 1 -n-heptenyl, 1 -n-octenyl.
  • linear alkenyl groups in which the double bond is placed further away from the place where alkenyl group is bound to the rest of the molecule include 1 -n-propen-3-yl, 2-buten-1 -yl, 1-buten-3-yl, 1-buten-4-yl, 1 -hexen-6-yl.
  • Examples for branched alkenyl groups in which the double bond includes the carbon atom with which alkenyl group is bound to the rest of the molecule include 1 -propen-2-yl, 1-n-buten-2-yl, 2-buten-2-yl, cyclopenten-1-yl, cyclohexen-1-yl.
  • Examples for branched alkenyl groups in which the double bond is placed further away from the place where alkenyl group is bound to the rest of the mole- cule include 2-methyl-1 -buten-4-yl, cyclopenten-3-yl, cyclohexene-3-yl.
  • alkenyl group with more than one double bonds examples include 1 ,3-butadien-1 -yl, 1 ,3-butadien-2-yl, cyclopen- tadien-5-yl.
  • the alkenyl group is a Ci to Cs alkenyl group, more preferably a Ci to C6 alkenyl group, in particular a Ci to C 4 alkenyl group.
  • Aryl groups include aromatic hydrocarbons such as phenyl, cyclopentadienyl, naphthalyl, an- thrancenyl, phenanthrenyl groups and heteroaromatic groups such as pyrryl, furanyl, thienyl, pyridinyl, quinoyl, benzofuryl, benzothiophenyl, thienothienyl.
  • aromatic hydrocarbons such as phenyl, cyclopentadienyl, naphthalyl, an- thrancenyl, phenanthrenyl groups and heteroaromatic groups such as pyrryl, furanyl, thienyl, pyridinyl, quinoyl, benzofuryl, benzothiophenyl, thienothienyl.
  • Several of these groups or combinations of these groups are also possible like biphenyl, thienophenyl or furanylthienyl.
  • Aryl groups can be substituted for example by halogens like fluoride, chloride, bromide, iodide; by pseudohalogens like cyanide, cyanate, thiocyanate; by alcohols; alkyl groups; alkoxy groups; amine groups like dimethylamine or bis(trimethylsilyl)amine; or aryl groups.
  • the aryl group is preferably a Cs to C20 aryl group, more preferably a C6 to C16 aryl group.
  • Alkyl and alkoxy substituted aromatic hydrocarbons are preferred, in particular 2,4, 6-trimethylphenyl, 2-iso- propylphenyl, 2,6-diisopropylphenyl, and 2,4,6-triisopropylphenyl, pentamethylcyclopentadienyl, 2,6-dimethoxyphenyl and 2,4,6-trimethoxyphenyl.
  • a silyl group is a silicon atom with typically three substituents.
  • a silyl group has the formula SiE 3 , wherein E is hydrogen, an alkyl group, an alkoxy group, an alkenyl group, an aryl group, an aryloxy group, an amino group, or a silyl group. It is possible that all three E are the same or that two E are the same and the remaining E is different or that all three E are different to each other. It is also possible that two E together form a ring including the Si atom. Alkyl and aryl groups are as described above.
  • silyl groups examples include S1 H3, methylsilyl, trime- thylsilyl, triethylsilyl, tri-n-propylsilyl, tri-iso-propylsilyl, tricyclohexylsilyl, dimethyl-tert-butylsilyl, dimethylcyclohexylsilyl, methyl-di-iso-propylsilyl, triphenylsilyl, phenylsilyl, dimethylphenylsilyl, pentamethyldisilyl.
  • X is an olefinic or aromatic group which forms a ⁇ bond to the silicon atom.
  • X is a cyclopentadienyl derivative.
  • Cyclopentadienyl derivatives include benzo annulated derivatives such as indenyl or fluorenyl, wherein cyclopentadienyl is pre- ferred.
  • the cyclopentadienyl derivatives can be substituted with one or more alkyl group, alkenyl group, aryl group, or silyl group. If the cyclopentadienyl derivative is substituted more than once, it can be substituted by the same substituent or by different once.
  • the cy- clopentadienyl derivative is substituted with an alkyl group, for example tetramethylcyclpentadi- enyl, more preferably, all positions are substituted with an alkyl group, for example pentamethyl- cyclopentadienyl, pentaethylcyclopentadienyl or pentaisopropylcyclopentadienyl.
  • Preferred olefinic groups which form a ⁇ bond to the silicon atom are anionic dienes or anionic allyl groups.
  • Preferred examples for anionic dienes are 1 ,3-pentadienyl, 2,4-di-tert-butyl-1 ,3- pentadienyl, 2-methyl-4-tert-butyl-1 ,3-pentadienyl, 1 ,3-hexadienyl, 1 ,3-cyclohexadienyl, 5,5-di- methyl-1 ,3-cyclohexadienyl, and 1 ,3-cyclooctadienyl.
  • Examples for anionic allyl group are pro- penyl, 2-butenyl, 3-methyl-2-butenyl.
  • Z is a neutral ligand.
  • the compound of general formula (II) contains one or two Z, i.e. n is 1 or 2, preferably 1 .
  • Suitable neutral ligands include carbenes; amines including trialkylamines such as trimethylamine; phosphanes including trial- kylphosphanes such as trimethylphosphane and trihalogenphosphanes such as trifluorophos- phane; sulfides including dialkylsulfides such as dimethylsulfide; pyridines including amino-sub- stituted pyridines such as 4-dimethylaminopyridine.
  • Preferred carbenes are N-heterocyclic carbenes such as N,N-dialklylimidazol-2-ylidene, or N,N- dialklylimidazolidine-2-ylidene; and non-cyclic carbenes such as bis(dialkylamino)methylidene.
  • N,N-dialklylimidazol-2-ylidene are 1 ,3-dimethylimidazol-2-ylidene, 1 ,3- diisopropylimidazol-2-ylidene, 1 ,3-ditertbuylimidazol-2-ylidene, 1 ,3-diphenylimidazol-2-ylidene, 1 ,3-dimesitylimidazol-2-ylidene, 1 ,3-bis(2,6-diisopropylphenyl)imidazole-2-ylidene, 1 ,3-bis(trime- thylsilyl)imidazole-2-ylidene, 1 ,3,4,5-tetramethylimidazol-2-ylidene, 1 ,3-diisopropyl-4,5-dime- thylimidazol-2-ylidene, 1 ,3-diphenyl-4,5-di
  • N,N-dialklylimidazolidine-2-ylidene are 1 ,3-dimethylimidazolidine-2-yli- dene, 1 ,3-diisopropylimidazolidine-2-ylidene, 1 ,3-ditertbuylimidazolidine-2-ylidene, 1 ,3-diphe- nylimidazolidine-2-ylidene, 1 ,3-dimesitylimidazolidine-2-ylidene, 1 ,3-bis(2,6-diiso- propylphenyl)imidazolidinee-2-ylidene, 1 ,3-bis(trimethylsilyl)imidazolidinee-2-ylidene, 1 ,3,4,5- tetramethylimidazolidine-2-ylidene, 1 ,3-diisopropyl-4,5-dimethylimidazolidine-2-ylidene, 1 ,
  • bis(dialkylamino)methylidene are bis(dimethylamino)methylidene, bis(diisopropylamino)methylidene, bis(ditertbutylamino)methylidene, bis(diphenylamino)methyli- dene, bis(dimesitylamino)methylidene, bis(bis(2,6-diisopropylphenyl)amino)methylidene, bis(tri- methylsilyl)methylidene.
  • the molecular weight of the compound of general formula (I) or (II) is up to 1200 g/mol, more preferred up to 1000 g/mol, in particular up to 800 g/mol.
  • Cp * stands for pentamethylcyclopendienyl, CpMe4H for tetramethylcyclopentadienyl, CpEts for pentaethylcyclopentadienyl, Cp(iPr)s for pentaisopropylcyclpentadienyl, TBP for 2,4-di-tert-bu- tyl-1 ,3-pentadienyl, TMS for trimetylsilyl, TBDMS for tert-butyl-dimethylsilyl, Me for methyl, Et for ethyl, iPr for isopropyl, NHC-Me for 1 ,3,4, 5-tetramethylimidazol-2-ylidene, DMAP for 4-dimethyl- aminopyridine.
  • the compound of general formula (I) or (II) used in the process according to the present invention is preferably used at high purity to achieve best results.
  • High purity means that the sub- stance employed contains at least 90 wt.-% compound of general formula (I) or (II), preferably at least 95 wt.-% compound of general formula (I) or (II), more preferably at least 98 wt.-% compound of general formula (I) or (II), in particular at least 99 wt.-% compound of general formula (I) or (II).
  • the purity can be determined by elemental analysis according to DIN 51721 (Prufung fester Brennstoffe - Beêt des Gehaltes an Kohlenstoff und Wasserstoff -maschine nach Radmacher-Hoverath, August 2001 ).
  • the compound of general formula (I) or (II) can be deposited from the gaseous or aerosol state. It can be brought into the gaseous or aerosol state by heating it to elevated temperatures. In any case a temperature below the decomposition temperature of the compound of general formula (I) or (II) has to be chosen.
  • the heating temperature ranges from slightly above room temperature to 400 °C, more preferably from 30 °C to 300 °C, even more preferably from 40 °C to 250 °C, in particular from 50 °C to 200 °C.
  • Another way of bringing the compound of general formula (I) or (II) into the gaseous or aerosol state is direct liquid injection (DLI) as described for example in US 2009 / 0 226 612 A1.
  • DLI direct liquid injection
  • the compound of general formula (I) or (II) is typically dissolved in a solvent and sprayed in a carrier gas or vacuum.
  • the temperature and the pressure the compound of general formula (I) or (II) is either brought into the gaseous state or into the aerosol state.
  • solvents can be used provided that the compound of general formula (I) or (II) shows sufficient solubility in that solvent such as at least 1 g/l, preferably at least 10 g/l, more preferably at least 100 g/l.
  • solvents are coordinating solvents such as tetrahydrofuran, dioxane, diethoxye- thane, pyridine or non-coordinating solvents such as hexane, heptane, benzene, toluene, or xylene.
  • Solvent mixtures are also suitable.
  • the aerosol comprising the compound of general formula (I) or (II) should contain very fine liquid droplets or solid particles.
  • the liquid droplets or solid particles have a weight average diameter of not more than 500 nm, more preferably not more than 100 nm.
  • the weight average diameter of liquid droplets or solid particles can be determined by dynamic light scattering as described in ISO 22412:2008. It is also possible that a part of the compound of general formula (I) or (II) is in the gaseous state and the rest is in the aerosol state, for example due to a limited vapor pressure of the compound of general formula (I) or (II) leading to partial evaporation of the compound of general formula (I) or (II) in the aerosol state.
  • the metal-containing compound can be brought into the gaseous state by direct liquid evaporation (DLE) as described for example by J. Yang et al. (Journal of Materials Chem- istry C, volume 3 (2015) page 12098-12106).
  • DLE direct liquid evaporation
  • the metal-containing compound or the reducing agent is mixed with a solvent, for example a hydrocarbon such as tetradecane, and heated below the boiling point of the solvent.
  • a solvent for example a hydrocarbon such as tetradecane
  • the process can usually be performed at lower heating temperatures leading to decreased decomposition of the compound of general formula (I) or (II). It is also possible to use increased pressure to push the compound of general formula (I) or (II) in the gaseous or aerosol state towards the solid substrate. Often, an inert gas, such as nitrogen or argon, is used as carrier gas for this purpose.
  • an inert gas such as nitrogen or argon, is used as carrier gas for this purpose.
  • the pressure is 10 bar to 10 "7 mbar, more preferably 1 bar to 10 -3 mbar, in particular 10 to 0.1 mbar, such as 1 mbar.
  • the compound of general formula (I) or (II) is deposited or brought in contact with the solid substrate from solution.
  • Deposition from solution is advantageous for compounds which are not stable enough for evaporation.
  • the solution needs to have a high purity to avoid undesirable contaminations on the surface.
  • Deposition from solution usually requires a solvent which does not react with the compound of general formula (I) or (II).
  • solvents examples include ethers like diethyl ether, methyl-tert-butylether, tetrahydrofurane, 1 ,4-diox- ane; ketones like acetone, methylethylketone, cyclopentanone; esters like ethyl acetate; lactones like 4-butyrolactone; organic carbonates like diethylcarbonate, ethylene carbonate, vi- nylenecarbonate; aromatic hydrocarbons like benzene, toluene, xylene, mesitylene, ethylben- zene, styrene; aliphatic hydrocarbons like n-pentane, n-hexane, n-octane, cyclohexane, iso-un- decane, decaline, hexadecane.
  • ethers like diethyl ether, methyl-tert-butylether, te
  • Ethers are preferred, in particular diethylether, methyl-tert-butylether, tetrahydrofurane, and 1 ,4-dioxane.
  • concentration of the compound of general formula (I) or (II) depend among others on the reactivity and the desired reaction time. Typically, the concentration is 0.1 mmol/l to 10 mol/l, preferably 1 mmol/l to 1 mol/l, in particular 10 to 100 mmol/l.
  • the reaction temperature for solution deposition is typically lower than for deposition from the gaseous or aerosol phase, typically 20 to 150 °C, preferably 50 to 120 °C, in particular 60 to 100 °C.
  • the deposition takes place if the substrate comes in contact with the compound of general for- mula (I) or (II).
  • the deposition process can be conducted in two different ways: either the substrate is heated above or below the decomposition temperature of the compound of general formula (I) or (II). If the substrate is heated above the decomposition temperature of the compound of general formula (I) or (II), the compound of general formula (I) or (II) continuously decomposes on the surface of the solid substrate as long as more compound of general formula (I) or (II) in the gaseous or aerosol state reaches the surface of the solid substrate. This process is typically called chemical vapor deposition (CVD).
  • CVD chemical vapor deposition
  • an inorganic layer of homogeneous composition e.g.
  • the metal oxide or nitride is formed on the solid substrate as the organic material is desorbed from the metal M.
  • the solid substrate is heated to a temperature in the range of 300 to 1000 °C, preferably in the range of 350 to 600 °C.
  • the substrate is below the decomposition temperature of the metal-containing compound.
  • the solid substrate is at a temperature equal to or slightly above the temperature of the place where the metal-containing compound is brought into the gaseous state, often at room temperature or only slightly above.
  • the temperature of the substrate is 5 °C to 40 °C higher than the place where the metal-containing compound is brought into the gaseous state, for example 20 °C.
  • the temperature of the substrate is from room temperature to 600 °C, more preferably from 100 to 450 °C, such as 150 to 350 °C, for example 220 °C or 280 °C.
  • the deposition of compound of general formula (I) or (II) onto the solid substrate is either a phy- sisorption or a chemisorption process.
  • the compound of general formula (I) or (II) is chemisorbed on the solid substrate.
  • the mass Upon evacuation of the chamber in which the quartz crystal is placed the mass should not decrease to the initial mass, but about a monolayer of the residual compound of general formula (I) or (II) remains if chemisorption has taken place.
  • the X-ray photo- electron spectroscopy (XPS) signal ISO 13424 EN - Surface chemical analysis - X-ray photoe- lectron spectroscopy - Reporting of results of thin-film analysis; October 2013) of M changes due to the bond formation to the substrate.
  • the deposition of the compound of general formula (I) or (II) on the solid substrate preferably represents a self-limiting process step.
  • the typical layer thickness of a self-limiting deposition processes step is from 0.005 to 1 nm, preferably from 0.01 to 0.5 nm, more preferably from 0.02 to 0.4 nm, in particular from 0.05 to 0.2 nm.
  • the layer thickness is typically measured by ellipso- metry as described in PAS 1022 DE (Referenz compiler GmbH von260en und dielektrischen Materialeigenschaften understand der Schichtdicke diinner Schichten with Ellipso- metrie; February 2004).
  • Removing all organic parts in the context of the present in- vention means that not more than 10 wt.-% of the carbon present in the deposited compound of general formula (I) or (II) remains in the deposited layer on the solid substrate, more preferably not more than 5 wt.-%, in particular not more than 1 wt.-%.
  • the decomposition can be effected in various ways. The temperature of the solid substrate can be increased above the decomposition temperature.
  • the deposited compound of general formula (I) or (II) to a plasma like an oxygen plasma, hydrogen plasma, ammonia plasma, or nitrogen plasma; to oxidants like oxygen, oxygen radicals, ozone, nitrous oxide (N2O), nitric oxide (NO), nitrogendioxde (NO2) or hydrogenperoxide; to ammonia or ammonia derivatives for example tert-butylamine, iso-propylamine, dimethylamine, methylethylamine, or diethylamine; to hydrazine or hydrazine derivatives like ⁇ , ⁇ -dimethylhydrazine; to solvents like water, alkanes, or tetrachlorocarbon; or to boron compound like borane.
  • a plasma like an oxygen plasma, hydrogen plasma, ammonia plasma, or nitrogen plasma
  • oxidants like oxygen, oxygen radicals, ozone, nitrous oxide (N2O), nitric oxide (NO), nitrogendioxde (NO2)
  • silicon oxide it is preferable to use oxidants, plasma or water, in particular oxygen, water, oxygen plasma or ozone.
  • oxidants plasma or water, in particular oxygen, water, oxygen plasma or ozone.
  • silicon nitride ammonia, hydrazine, hydrazine derivatives, nitrogen plasma or ammonia plasma are preferred.
  • silicon boride boron compounds are preferred.
  • silicon carbide alkanes or tetrachlorocarbon are preferred.
  • silicon carbide ni- tride mixtures including alkanes, tetrachlorocarbon, ammonia and/or hydrazine are preferred.
  • a deposition process comprising a self-limiting process step and a subsequent self-limiting reaction is often referred to as atomic layer deposition (ALD).
  • ALD atomic layer deposition
  • Equivalent expressions are molecular layer deposition (MLD) or atomic layer epitaxy (ALE).
  • MLD molecular layer deposition
  • ALE atomic layer epitaxy
  • the process according to the present invention is preferably an ALD process.
  • the ALD process is described in detail by George (Chemical Reviews 1 10 (2010), 1 1 1 -131 ).
  • a compound of general formula (I) or (II) is deposited on a solid substrate.
  • the solid substrate can be any solid material. These include for ex- ample metals, semimetals, oxides, nitrides, and polymers. It is also possible that the substrate is a mixture of different materials. Examples for metals are tantalum, tungsten, cobalt, nickel, platinum, ruthenium, palladium, manganese, aluminum, steel, zinc, and copper. Examples for semimetals are silicon, germanium, and gallium arsenide. Examples for oxides are silicon dioxide, titanium dioxide, zirconium oxide, and zinc oxide.
  • nitrides silicon nitride, aluminum nitride, titanium nitride, tantalum nitride and gallium nitride.
  • polymers are polyethylene terephthalate (PET), polyethylene naphthalene-dicarboxylic acid (PEN), and polyamides.
  • the solid substrate can have any shape. These include sheet plates, films, fibers, particles of various sizes, and substrates with trenches or other indentations.
  • the solid substrate can be of any size. If the solid substrate has a particle shape, the size of particles can range from below 100 nm to several centimeters, preferably from 1 ⁇ to 1 mm. In order to avoid particles or fibers to stick to each other while the compound of general formula (I) or (II) is deposited onto them, it is preferably to keep them in motion. This can, for example, be achieved by stirring, by rotating drums, or by fluidized bed techniques.
  • a particular advantage of the process according to the present invention is that the compound of general formula (I) or (II) is very versatile, so the process parameters can be varied in a broad range. Therefore, the process according to the present invention includes both a CVD process as well as an ALD process.
  • films of various thicknesses are generated.
  • the sequence of depositing the compound of general formula (I) or (II) onto a solid substrate and decomposing the deposited compound of general formula (I) or (II) is performed at least twice.
  • This sequence can be repeated many times, for example 10 to 500, such as 50 or 100 times. Usually, this se- quence is not repeated more often than 1000 times.
  • the thickness of the film is proportional to the number of sequences performed. However, in practice some deviations from proportionality are observed for the first 30 to 50 sequences. It is assumed that irregularities of the surface structure of the solid substrate cause this non-proportionality.
  • One sequence of the process according to the present invention can take from milliseconds to several minutes, preferably from 0.1 second to 1 minute, in particular from 1 to 10 seconds. The longer the solid substrate at a temperature below the decomposition temperature of the compound of general formula (I) or (II) is exposed to the compound of general formula (I) or (II) the more regular films formed with less defects.
  • the process according to the present invention yields a silicon-containing film.
  • the film can be only one monolayer of deposited compound of formula (I), several consecutively deposited and decomposed layers of the compound of general formula (I) or (II), or several different layers wherein at least one layer in the film was generated by using the compound of general formula (I) or (II).
  • the film can contain defects like holes. These defects, however, generally constitute less than half of the surface area covered by the film.
  • the film is preferably an inorganic film. In order to generate an inorganic film, all organic parts have to be removed from the film as described above.
  • the film can contain silicon oxide, silicon nitride, silicon boride, silicon carbide, or mixtures such as silicon carbide nitride, preferable the film contains silicon oxide and silicon nitride.
  • the film can have a thickness of 0.1 nm to 1 ⁇ or above depending on the film formation process as described above. Preferably, the film has a thickness of 0.5 to 50 nm.
  • the film preferably has a very uniform film thickness which means that the film thickness at different places on the substrate varies very little, usually less than 10 %, preferably less than 5 %.
  • Fur- thermore the film is preferably a conformal film on the surface of the substrate. Suitable methods to determine the film thickness and uniformity are XPS or ellipsometry.
  • the film obtained by the process according to the present invention can be used in an electronic element or in the fabrication of an electronic element.
  • Electronic elements can have structural features of various sizes, for example from 10 nm to 100 ⁇ , such as 100 nm or 1 ⁇ .
  • the process for forming the films for the electronic elements is particularly well suited for very fine structures. Therefore, electronic elements with sizes below 1 ⁇ are preferred.
  • Examples for electronic elements are field-effect transistors (FET), solar cells, light emitting diodes, sensors, or capacitors.
  • FET field-effect transistors
  • solar cells solar cells
  • light emitting diodes sensors
  • capacitors In optical devices such as light emitting diodes or light sensors the film according to the present invention serves to increase the reflective index of the layer which reflects light.
  • An example for a sensor is an oxygen sensor, in which the film can serve as oxygen conductor, for example if a metal oxide film is prepared.
  • MOS-FET metal oxide semiconductor
  • the film can act as dielectric layer or as diffusion barrier.
  • etch-rates i.e. films which are more stable in etch processes in comparison to silicon-containing films. This effect is particularly pronounced if etching is performed with hydrogen fluoride (HF) or ammonium fluoride (NH4F).
  • HF hydrogen fluoride
  • NHS ammonium fluoride
  • Such increased etching stability is of advantage in the chip production in which complex layer architectures are made by depositing films and selectively removing parts of them, for example by employing photo resists and shadow masks.
  • Figure 1 shows the crystal structure of compound C-1.
  • Figure 2 shows the crystal structure of compound C-31 .

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Abstract

The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process for producing a silicon-containing film comprising depositing the compound of general formula (I) or (II) onto a solid substrate, wherein R is an alkyl group, an alkenyl group, an aryl group, or a silyl group, X is an olefinic or aromatic group forming a π bond to the silicon atom, Z is a neutral ligand, and n is 1 or 2.

Description

Process for the Generation of Thin Silicon-containing Films Description The present invention is in the field of processes for the generation of thin silicon-containing films on substrates, in particular atomic layer deposition processes.
With the ongoing miniaturization, e.g. in the semiconductor industry, the need for thin inorganic films on substrates increases while the requirements of the quality of such films become stricter. Thin inorganic films serve different purposes such as barrier layers, dielectrics, conducting features, capping, or separation of fine structures. Several methods for the generation of thin inorganic films are known. One of them is the deposition of film forming compounds from the gaseous state on a substrate. Therefore, volatile precursors are required which can be deposited on a substrate and then be transformed into the desired composition in the film.
For silicon-containing thin films typically silicon halogenides, such as S12CI6, are used. However, these compounds are difficult to handle and often leave a significant amount of residual halogens in the film, which is undesirable for some applications. US 8 535 760 discloses a CVD process employing hydrogen or halogen substitued tetrasi- lyldisilene precursors. However, these precursors are so unstable that they can hardly be handled and do not yield films of sufficient quality.
Protchenko et al. disclose in Angewandte Chemie International Edition volume 52 (2013), page 568-571 a silyl substituted silylene compound. However, no indication about the suitability in a vapor process is given.
It was an object of the present invention to provide a process for the generation of thin silicon- containing films with high quality, such as low amounts of impurities and uniform film thickness and composition. Furthermore, it was aimed at a process employing compounds which can be synthesized and handled more easily. The process should also be flexible with regard to parameters such as temperature or pressure in order to be adaptable to various different applications.
These objects were achieved by a process for producing a silicon-containing film comprising de- positing the compound of general formula (I) or (II)
R3Si— si— x (i;
X
Figure imgf000002_0001
onto a solid substrate, wherein R is an alkyl group, an alkenyl group, an aryl group, or a silyl group,
X is an olefinic or aromatic group forming a π bond to the silicon atom,
Z is a neutral ligand, and
n is 1 or 2.
The present invention further relates to the use of the compound of general formula (I) or (II), wherein R is an alkyi group, an alkenyl group, an aryl group, or a silyl group,
X is an olefinic or aromatic group forming a π bond to the silicon atom for a film deposition process,
Z is a neutral ligand, and
n is 1 or 2.
The present invention further relates to a compound of general formula (I) or (II), wherein R is an alkyi group, an alkenyl group, an aryl group, or a silyl group,
X is an olefinic or aromatic group forming a π bond to the silicon atom,
Z is a neutral ligand, and
n is 1 or 2.
Preferred embodiments of the present invention can be found in the description and the claims. Combinations of different embodiments fall within the scope of the present invention.
In the compound of general formula (I) or (II) the silicon atom bond to X has the oxidation state +2. Thus, the compound of general formula (I) or (II) is often called a silylene. R is an alkyi group, an alkenyl group, an aryl group, or a silyl group. It is possible that all R are the same or different to each other, for example two R are the same and one R is different to the other or all three R are different to each other. Preferably, all R are the same. Preferred embodiments of R given below means that at least one of the R is the preferred embodiment, more preferably at least two of the R, in particular all of R. An alkyi group can be linear or branched. Examples for a linear alkyi group are methyl, ethyl, n- propyl, n-butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, n-nonyl, n-decyl. Examples for a branched alkyi group are iso-propyl, iso-butyl, sec-butyl, tert-butyl, 2-methyl-pentyl, 2-ethyl-hexyl, cyclo- propyl, cyclohexyl, indanyl, norbornyl. Preferably, the alkyi group is a Ci to Cs alkyi group, more preferably a Ci to C6 alkyi group, in particular a Ci to C4 alkyi group, such as methyl, ethyl, iso- propyl or tert-butyl. Alkyi groups can be substituted, for example by halogens such as F, CI, Br, I, in particular F; by hydroxyl groups; by ether groups; or by amines such as dialkylamines.
An alkenyl group contains at least one carbon-carbon double bond. The double bond can include the carbon atom with which the alkenyl group is bound to the rest of the molecule, or it can be placed further away from the place where the alkenyl group is bound to the rest of the molecule, preferably it is placed further away from the place where the alkenyl group is bound to the rest of the molecule. Alkenyl groups can be linear or branched. Examples for linear alkenyl groups in which the double bond includes the carbon atom with which the alkenyl group is bound to the rest of the molecule include 1-ethenyl, 1 -propenyl, 1-n-butenyl, 1 -n-pentenyl, 1 -n- hexenyl, 1 -n-heptenyl, 1 -n-octenyl. Examples for linear alkenyl groups in which the double bond is placed further away from the place where alkenyl group is bound to the rest of the molecule include 1 -n-propen-3-yl, 2-buten-1 -yl, 1-buten-3-yl, 1-buten-4-yl, 1 -hexen-6-yl. Examples for branched alkenyl groups in which the double bond includes the carbon atom with which alkenyl group is bound to the rest of the molecule include 1 -propen-2-yl, 1-n-buten-2-yl, 2-buten-2-yl, cyclopenten-1-yl, cyclohexen-1-yl. Examples for branched alkenyl groups in which the double bond is placed further away from the place where alkenyl group is bound to the rest of the mole- cule include 2-methyl-1 -buten-4-yl, cyclopenten-3-yl, cyclohexene-3-yl. Examples for an alkenyl group with more than one double bonds include 1 ,3-butadien-1 -yl, 1 ,3-butadien-2-yl, cyclopen- tadien-5-yl. Preferably, the alkenyl group is a Ci to Cs alkenyl group, more preferably a Ci to C6 alkenyl group, in particular a Ci to C4 alkenyl group.
Aryl groups include aromatic hydrocarbons such as phenyl, cyclopentadienyl, naphthalyl, an- thrancenyl, phenanthrenyl groups and heteroaromatic groups such as pyrryl, furanyl, thienyl, pyridinyl, quinoyl, benzofuryl, benzothiophenyl, thienothienyl. Several of these groups or combinations of these groups are also possible like biphenyl, thienophenyl or furanylthienyl. Aryl groups can be substituted for example by halogens like fluoride, chloride, bromide, iodide; by pseudohalogens like cyanide, cyanate, thiocyanate; by alcohols; alkyl groups; alkoxy groups; amine groups like dimethylamine or bis(trimethylsilyl)amine; or aryl groups. The aryl group is preferably a Cs to C20 aryl group, more preferably a C6 to C16 aryl group. Alkyl and alkoxy substituted aromatic hydrocarbons are preferred, in particular 2,4, 6-trimethylphenyl, 2-iso- propylphenyl, 2,6-diisopropylphenyl, and 2,4,6-triisopropylphenyl, pentamethylcyclopentadienyl, 2,6-dimethoxyphenyl and 2,4,6-trimethoxyphenyl.
A silyl group is a silicon atom with typically three substituents. Preferably a silyl group has the formula SiE3, wherein E is hydrogen, an alkyl group, an alkoxy group, an alkenyl group, an aryl group, an aryloxy group, an amino group, or a silyl group. It is possible that all three E are the same or that two E are the same and the remaining E is different or that all three E are different to each other. It is also possible that two E together form a ring including the Si atom. Alkyl and aryl groups are as described above. Examples for silyl groups include S1 H3, methylsilyl, trime- thylsilyl, triethylsilyl, tri-n-propylsilyl, tri-iso-propylsilyl, tricyclohexylsilyl, dimethyl-tert-butylsilyl, dimethylcyclohexylsilyl, methyl-di-iso-propylsilyl, triphenylsilyl, phenylsilyl, dimethylphenylsilyl, pentamethyldisilyl.
According to the present invention X is an olefinic or aromatic group which forms a π bond to the silicon atom. Preferably, X is a cyclopentadienyl derivative. Cyclopentadienyl derivatives include benzo annulated derivatives such as indenyl or fluorenyl, wherein cyclopentadienyl is pre- ferred. The cyclopentadienyl derivatives can be substituted with one or more alkyl group, alkenyl group, aryl group, or silyl group. If the cyclopentadienyl derivative is substituted more than once, it can be substituted by the same substituent or by different once. Preferably, the cy- clopentadienyl derivative is substituted with an alkyl group, for example tetramethylcyclpentadi- enyl, more preferably, all positions are substituted with an alkyl group, for example pentamethyl- cyclopentadienyl, pentaethylcyclopentadienyl or pentaisopropylcyclopentadienyl.
Preferred olefinic groups which form a π bond to the silicon atom are anionic dienes or anionic allyl groups. Preferred examples for anionic dienes are 1 ,3-pentadienyl, 2,4-di-tert-butyl-1 ,3- pentadienyl, 2-methyl-4-tert-butyl-1 ,3-pentadienyl, 1 ,3-hexadienyl, 1 ,3-cyclohexadienyl, 5,5-di- methyl-1 ,3-cyclohexadienyl, and 1 ,3-cyclooctadienyl. Examples for anionic allyl group are pro- penyl, 2-butenyl, 3-methyl-2-butenyl.
According to the present invention, Z is a neutral ligand. The compound of general formula (II) contains one or two Z, i.e. n is 1 or 2, preferably 1 . Suitable neutral ligands include carbenes; amines including trialkylamines such as trimethylamine; phosphanes including trial- kylphosphanes such as trimethylphosphane and trihalogenphosphanes such as trifluorophos- phane; sulfides including dialkylsulfides such as dimethylsulfide; pyridines including amino-sub- stituted pyridines such as 4-dimethylaminopyridine.
Preferred carbenes are N-heterocyclic carbenes such as N,N-dialklylimidazol-2-ylidene, or N,N- dialklylimidazolidine-2-ylidene; and non-cyclic carbenes such as bis(dialkylamino)methylidene.
Preferred examples of N,N-dialklylimidazol-2-ylidene are 1 ,3-dimethylimidazol-2-ylidene, 1 ,3- diisopropylimidazol-2-ylidene, 1 ,3-ditertbuylimidazol-2-ylidene, 1 ,3-diphenylimidazol-2-ylidene, 1 ,3-dimesitylimidazol-2-ylidene, 1 ,3-bis(2,6-diisopropylphenyl)imidazole-2-ylidene, 1 ,3-bis(trime- thylsilyl)imidazole-2-ylidene, 1 ,3,4,5-tetramethylimidazol-2-ylidene, 1 ,3-diisopropyl-4,5-dime- thylimidazol-2-ylidene, 1 ,3-diphenyl-4,5-dimethylimidazol-2-ylidene, 1 ,3-ditertbuyl-4,5-dime- thylimidazol-2-ylidene, 1 ,3-dimesityl-4,5-dimethylimidazol-2-ylidene, 1 ,3-bis(2,6-diiso- propylphenyl)-4,5-dimethylimidazole-2-ylidene, 1 ,3-bis(trimethylsilyl)-4,5-dimethylimidazole-2- ylidene,1 ,3-dimethyl-4,5-bis(trifluoromethyl)imidazol-2-ylidene, 1 ,3-diisopropyl-4,5-bis(trifluoro- methyl)imidazol-2-ylidene, 1 ,3-ditertbutyl-4,5-bis(trifluoromethyl)imidazol-2-ylidene, 1 ,3-diphe- nyl-4,5-bis(trifluoromethyl)imidazol-2-ylidene, 1 ,3-dimesityl-4,5-bis(trifluoromethyl)imidazol-2- ylidene, 1 ,3- bis(2,6-diisopropylphenyl)-4,5-bis(trifluoromethyl)imidazol-2-ylidene, 1 ,3- bis(trime- thylsilyl)-4,5-bis(trifluoromethyl)imidazol-2-ylidene. Preferred examples of N,N-dialklylimidazolidine-2-ylidene are 1 ,3-dimethylimidazolidine-2-yli- dene, 1 ,3-diisopropylimidazolidine-2-ylidene, 1 ,3-ditertbuylimidazolidine-2-ylidene, 1 ,3-diphe- nylimidazolidine-2-ylidene, 1 ,3-dimesitylimidazolidine-2-ylidene, 1 ,3-bis(2,6-diiso- propylphenyl)imidazolidinee-2-ylidene, 1 ,3-bis(trimethylsilyl)imidazolidinee-2-ylidene, 1 ,3,4,5- tetramethylimidazolidine-2-ylidene, 1 ,3-diisopropyl-4,5-dimethylimidazolidine-2-ylidene, 1 ,3-di- phenyl-4,5-dimethylimidazolidine-2-ylidene, 1 ,3-ditertbuyl-4,5-dimethylimidazolidine-2-ylidene, 1 ,3-dimesityl-4,5-dimethylimidazolidine-2-ylidene, 1 ,3-bis(2,6-diisopropylphenyl)-4,5-dimethylim- idazolidinee-2-ylidene, 1 ,3-bis(trimethylsilyl)-4,5-dimethylimidazolidinee-2-ylidene,1 ,3-dimethyl- 4,5-bis(trifluoromethyl)imidazolidine-2-ylidene, 1 ,3-diisopropyl-4,5-bis(trifluoromethyl)imidazoli- dine-2-ylidene, 1 ,3-ditertbutyl-4,5-bis(trifluoromethyl)imidazolidine-2-ylidene, 1 ,3-diphenyl-4,5- bis(trifluoromethyl)imidazolidine-2-ylidene, 1 ,3-dimesityl-4,5-bis(trifluoromethyl)imidazolidine-2- ylidene, 1 ,3- bis(2,6-diisopropylphenyl)-4,5-bis(trifluoromethyl)imidazolidine-2-ylidene, 1 ,3- bis(trimethylsilyl)-4,5-bis(trifluoromethyl)imidazolidine-2-ylidene, 1 ,3,4,4,5,5-hexamethylimidaz- olidine-2-ylidene.
Preferred examples of bis(dialkylamino)methylidene are bis(dimethylamino)methylidene, bis(diisopropylamino)methylidene, bis(ditertbutylamino)methylidene, bis(diphenylamino)methyli- dene, bis(dimesitylamino)methylidene, bis(bis(2,6-diisopropylphenyl)amino)methylidene, bis(tri- methylsilyl)methylidene.
It is preferred that the molecular weight of the compound of general formula (I) or (II) is up to 1200 g/mol, more preferred up to 1000 g/mol, in particular up to 800 g/mol.
Some preferred examples for compounds of general formula (I) or (II) are given in the following table.
No. R X Z
C-1 TMS Cp* -
TMS
C-2 TMS Cp* - TBDMS
TMS
C-3 TMS Cp* - Me
TMS
C-4 TMS Cp* - Et
TMS
C-5 TMS Cp* - iPr
t-Bu
C-6 t-Bu Cp* - Me
C-1 TMS CpMe4H -
TMS
C-8 TMS CpMe4H - TBDMS
TMS
C-9 TMS CpMe4H - Me TMS
C-10 TMS CpMe4H -
Et
TMS
C-1 1 TMS CpMe4H - iPr
t-Bu
C-12 t-Bu CpMe4H -
Me
C-13 TMS CpEt5 -
TMS
C-14 TMS CpEt5 -
TBDMS
TMS
C-15 TMS CpEt5 -
Me
TMS
C-16 TMS CpEt5 -
Et
TMS
C-17 TMS CpEt5 - iPr
t-Bu
C-18 t-Bu CpEt5 -
Me
C-19 TMS Cp(iPr)5 -
TMS
C-20 TMS Cp(iPr)5 -
TBDMS
TMS
C-21 TMS Cp(iPr)5 -
Me
TMS
C-22 TMS Cp(iPr)5 -
Et
TMS
C-23 TMS Cp(iPr)5 - iPr
t-Bu
C-24 t-Bu Cp(iPr)5 -
Me
C-25 TMS TBP - TMS
C-26 TMS TBP - TBDMS
TMS
C-27 TMS TBP - Me
TMS
C-28 TMS TBP - Et
TMS
C-29 TMS TBP - iPr
t-Bu
C-30 t-Bu TBP - Me
C-31 TMS Cp* NHC-Me
C-32 TMS Cp* DMAP
C-33 TMS Cp* NMe3
C-34 TMS Cp* SMe2
C-35 TMS Cp* PMe3
C-36 TMS Cp* PFs
Cp* stands for pentamethylcyclopendienyl, CpMe4H for tetramethylcyclopentadienyl, CpEts for pentaethylcyclopentadienyl, Cp(iPr)s for pentaisopropylcyclpentadienyl, TBP for 2,4-di-tert-bu- tyl-1 ,3-pentadienyl, TMS for trimetylsilyl, TBDMS for tert-butyl-dimethylsilyl, Me for methyl, Et for ethyl, iPr for isopropyl, NHC-Me for 1 ,3,4, 5-tetramethylimidazol-2-ylidene, DMAP for 4-dimethyl- aminopyridine.
The synthesis of compounds of general formula (I) or (II) can be achieved by reacting X-Si- (Hal)3, in which Hal stand for halogen, preferably chlorine or bromine, with R3S1M , wherein M stand for an alkali metal, preferably sodium or potassium in a nonpolar solvent, preferably a hy- drocarbon, for example hexane. The reaction is best performed at or below room temperature and usually takes between 10 minutes and 5 hours.
The compound of general formula (I) or (II) used in the process according to the present invention is preferably used at high purity to achieve best results. High purity means that the sub- stance employed contains at least 90 wt.-% compound of general formula (I) or (II), preferably at least 95 wt.-% compound of general formula (I) or (II), more preferably at least 98 wt.-% compound of general formula (I) or (II), in particular at least 99 wt.-% compound of general formula (I) or (II). The purity can be determined by elemental analysis according to DIN 51721 (Prufung fester Brennstoffe - Bestimmung des Gehaltes an Kohlenstoff und Wasserstoff - Verfahren nach Radmacher-Hoverath, August 2001 ). The compound of general formula (I) or (II) can be deposited from the gaseous or aerosol state. It can be brought into the gaseous or aerosol state by heating it to elevated temperatures. In any case a temperature below the decomposition temperature of the compound of general formula (I) or (II) has to be chosen. Preferably, the heating temperature ranges from slightly above room temperature to 400 °C, more preferably from 30 °C to 300 °C, even more preferably from 40 °C to 250 °C, in particular from 50 °C to 200 °C.
Another way of bringing the compound of general formula (I) or (II) into the gaseous or aerosol state is direct liquid injection (DLI) as described for example in US 2009 / 0 226 612 A1. In this method the compound of general formula (I) or (II) is typically dissolved in a solvent and sprayed in a carrier gas or vacuum. Depending on the vapor pressure of the compound of general formula (I) or (II), the temperature and the pressure the compound of general formula (I) or (II) is either brought into the gaseous state or into the aerosol state. Various solvents can be used provided that the compound of general formula (I) or (II) shows sufficient solubility in that solvent such as at least 1 g/l, preferably at least 10 g/l, more preferably at least 100 g/l. Examples for these solvents are coordinating solvents such as tetrahydrofuran, dioxane, diethoxye- thane, pyridine or non-coordinating solvents such as hexane, heptane, benzene, toluene, or xylene. Solvent mixtures are also suitable. The aerosol comprising the compound of general formula (I) or (II) should contain very fine liquid droplets or solid particles. Preferably, the liquid droplets or solid particles have a weight average diameter of not more than 500 nm, more preferably not more than 100 nm. The weight average diameter of liquid droplets or solid particles can be determined by dynamic light scattering as described in ISO 22412:2008. It is also possible that a part of the compound of general formula (I) or (II) is in the gaseous state and the rest is in the aerosol state, for example due to a limited vapor pressure of the compound of general formula (I) or (II) leading to partial evaporation of the compound of general formula (I) or (II) in the aerosol state.
Alternatively, the metal-containing compound can be brought into the gaseous state by direct liquid evaporation (DLE) as described for example by J. Yang et al. (Journal of Materials Chem- istry C, volume 3 (2015) page 12098-12106). In this method, the metal-containing compound or the reducing agent is mixed with a solvent, for example a hydrocarbon such as tetradecane, and heated below the boiling point of the solvent. By evaporation of the solvent, the metal-containing compound or the reducing agent is brought into the gaseous state. This method has the advantage that no particulate contaminants are formed on the surface.
It is preferred to bring the compound of general formula (I) or (II) into the gaseous or aerosol state at decreased pressure. In this way, the process can usually be performed at lower heating temperatures leading to decreased decomposition of the compound of general formula (I) or (II). It is also possible to use increased pressure to push the compound of general formula (I) or (II) in the gaseous or aerosol state towards the solid substrate. Often, an inert gas, such as nitrogen or argon, is used as carrier gas for this purpose. Preferably, the pressure is 10 bar to 10"7 mbar, more preferably 1 bar to 10-3 mbar, in particular 10 to 0.1 mbar, such as 1 mbar. It is also possible that the compound of general formula (I) or (II) is deposited or brought in contact with the solid substrate from solution. Deposition from solution is advantageous for compounds which are not stable enough for evaporation. However, the solution needs to have a high purity to avoid undesirable contaminations on the surface. Deposition from solution usually requires a solvent which does not react with the compound of general formula (I) or (II). Examples for solvents are ethers like diethyl ether, methyl-tert-butylether, tetrahydrofurane, 1 ,4-diox- ane; ketones like acetone, methylethylketone, cyclopentanone; esters like ethyl acetate; lactones like 4-butyrolactone; organic carbonates like diethylcarbonate, ethylene carbonate, vi- nylenecarbonate; aromatic hydrocarbons like benzene, toluene, xylene, mesitylene, ethylben- zene, styrene; aliphatic hydrocarbons like n-pentane, n-hexane, n-octane, cyclohexane, iso-un- decane, decaline, hexadecane. Ethers are preferred, in particular diethylether, methyl-tert-butylether, tetrahydrofurane, and 1 ,4-dioxane. The concentration of the compound of general formula (I) or (II) depend among others on the reactivity and the desired reaction time. Typically, the concentration is 0.1 mmol/l to 10 mol/l, preferably 1 mmol/l to 1 mol/l, in particular 10 to 100 mmol/l. The reaction temperature for solution deposition is typically lower than for deposition from the gaseous or aerosol phase, typically 20 to 150 °C, preferably 50 to 120 °C, in particular 60 to 100 °C.
The deposition takes place if the substrate comes in contact with the compound of general for- mula (I) or (II). Generally, the deposition process can be conducted in two different ways: either the substrate is heated above or below the decomposition temperature of the compound of general formula (I) or (II). If the substrate is heated above the decomposition temperature of the compound of general formula (I) or (II), the compound of general formula (I) or (II) continuously decomposes on the surface of the solid substrate as long as more compound of general formula (I) or (II) in the gaseous or aerosol state reaches the surface of the solid substrate. This process is typically called chemical vapor deposition (CVD). Usually, an inorganic layer of homogeneous composition, e.g. the metal oxide or nitride, is formed on the solid substrate as the organic material is desorbed from the metal M. Typically the solid substrate is heated to a temperature in the range of 300 to 1000 °C, preferably in the range of 350 to 600 °C.
Alternatively, the substrate is below the decomposition temperature of the metal-containing compound. Typically, the solid substrate is at a temperature equal to or slightly above the temperature of the place where the metal-containing compound is brought into the gaseous state, often at room temperature or only slightly above. Preferably, the temperature of the substrate is 5 °C to 40 °C higher than the place where the metal-containing compound is brought into the gaseous state, for example 20 °C. Preferably, the temperature of the substrate is from room temperature to 600 °C, more preferably from 100 to 450 °C, such as 150 to 350 °C, for example 220 °C or 280 °C. The deposition of compound of general formula (I) or (II) onto the solid substrate is either a phy- sisorption or a chemisorption process. Preferably, the compound of general formula (I) or (II) is chemisorbed on the solid substrate. One can determine if the compound of general formula (I) or (II) chemisorbs to the solid substrate by exposing a quartz microbalance with a quartz crystal having the surface of the substrate in question to the compound of general formula (I) or (II) in the gaseous or aerosol state. The mass increase is recorded by the eigenfrequency of the quartz crystal. Upon evacuation of the chamber in which the quartz crystal is placed the mass should not decrease to the initial mass, but about a monolayer of the residual compound of general formula (I) or (II) remains if chemisorption has taken place. In most cases where chemisorp- tion of the compound of general formula (I) or (II) to the solid substrate occurs, the X-ray photo- electron spectroscopy (XPS) signal (ISO 13424 EN - Surface chemical analysis - X-ray photoe- lectron spectroscopy - Reporting of results of thin-film analysis; October 2013) of M changes due to the bond formation to the substrate.
If the temperature of the substrate in the process according to the present invention is kept below the decomposition temperature of the compound of general formula (I) or (II), typically a monolayer is deposited on the solid substrate. Once a molecule of general formula (I) or (II) is deposited on the solid substrate further deposition on top of it usually becomes less likely. Thus, the deposition of the compound of general formula (I) or (II) on the solid substrate preferably represents a self-limiting process step. The typical layer thickness of a self-limiting deposition processes step is from 0.005 to 1 nm, preferably from 0.01 to 0.5 nm, more preferably from 0.02 to 0.4 nm, in particular from 0.05 to 0.2 nm. The layer thickness is typically measured by ellipso- metry as described in PAS 1022 DE (Referenzverfahren zur Bestimmung von optischen und dielektrischen Materialeigenschaften sowie der Schichtdicke diinner Schichten mittels Ellipso- metrie; February 2004).
Often it is desired to build up thicker layers than those just described. In order to achieve this in the process according to the present invention it is preferable to decompose the deposited compound of general formula (I) or (II) by removal of organic parts after which further compound of general formula (I) or (II) is deposited. This sequence is preferably performed at least twice, more preferably at least 10 times, in particular at least 50 times. Normally, the sequence is performed not more than 1000 times. Removing all organic parts in the context of the present in- vention means that not more than 10 wt.-% of the carbon present in the deposited compound of general formula (I) or (II) remains in the deposited layer on the solid substrate, more preferably not more than 5 wt.-%, in particular not more than 1 wt.-%. The decomposition can be effected in various ways. The temperature of the solid substrate can be increased above the decomposition temperature.
Furthermore, it is possible to expose the deposited compound of general formula (I) or (II) to a plasma like an oxygen plasma, hydrogen plasma, ammonia plasma, or nitrogen plasma; to oxidants like oxygen, oxygen radicals, ozone, nitrous oxide (N2O), nitric oxide (NO), nitrogendioxde (NO2) or hydrogenperoxide; to ammonia or ammonia derivatives for example tert-butylamine, iso-propylamine, dimethylamine, methylethylamine, or diethylamine; to hydrazine or hydrazine derivatives like Ν,Ν-dimethylhydrazine; to solvents like water, alkanes, or tetrachlorocarbon; or to boron compound like borane. The choice depends on the chemical structure of the desired layer. For silicon oxide, it is preferable to use oxidants, plasma or water, in particular oxygen, water, oxygen plasma or ozone. For silicon nitride, ammonia, hydrazine, hydrazine derivatives, nitrogen plasma or ammonia plasma are preferred. For silicon boride boron compounds are preferred. For silicon carbide, alkanes or tetrachlorocarbon are preferred. For silicon carbide ni- tride, mixtures including alkanes, tetrachlorocarbon, ammonia and/or hydrazine are preferred.
A deposition process comprising a self-limiting process step and a subsequent self-limiting reaction is often referred to as atomic layer deposition (ALD). Equivalent expressions are molecular layer deposition (MLD) or atomic layer epitaxy (ALE). Hence, the process according to the present invention is preferably an ALD process. The ALD process is described in detail by George (Chemical Reviews 1 10 (2010), 1 1 1 -131 ).
In the process according to the present invention a compound of general formula (I) or (II) is deposited on a solid substrate. The solid substrate can be any solid material. These include for ex- ample metals, semimetals, oxides, nitrides, and polymers. It is also possible that the substrate is a mixture of different materials. Examples for metals are tantalum, tungsten, cobalt, nickel, platinum, ruthenium, palladium, manganese, aluminum, steel, zinc, and copper. Examples for semimetals are silicon, germanium, and gallium arsenide. Examples for oxides are silicon dioxide, titanium dioxide, zirconium oxide, and zinc oxide. Examples for nitrides are silicon nitride, aluminum nitride, titanium nitride, tantalum nitride and gallium nitride. Examples for polymers are polyethylene terephthalate (PET), polyethylene naphthalene-dicarboxylic acid (PEN), and polyamides.
The solid substrate can have any shape. These include sheet plates, films, fibers, particles of various sizes, and substrates with trenches or other indentations. The solid substrate can be of any size. If the solid substrate has a particle shape, the size of particles can range from below 100 nm to several centimeters, preferably from 1 μηη to 1 mm. In order to avoid particles or fibers to stick to each other while the compound of general formula (I) or (II) is deposited onto them, it is preferably to keep them in motion. This can, for example, be achieved by stirring, by rotating drums, or by fluidized bed techniques.
A particular advantage of the process according to the present invention is that the compound of general formula (I) or (II) is very versatile, so the process parameters can be varied in a broad range. Therefore, the process according to the present invention includes both a CVD process as well as an ALD process.
Depending on the number of sequences of the process according to the present invention performed as ALD process, films of various thicknesses are generated. Preferably, the sequence of depositing the compound of general formula (I) or (II) onto a solid substrate and decomposing the deposited compound of general formula (I) or (II) is performed at least twice. This sequence can be repeated many times, for example 10 to 500, such as 50 or 100 times. Usually, this se- quence is not repeated more often than 1000 times. Ideally, the thickness of the film is proportional to the number of sequences performed. However, in practice some deviations from proportionality are observed for the first 30 to 50 sequences. It is assumed that irregularities of the surface structure of the solid substrate cause this non-proportionality.
One sequence of the process according to the present invention can take from milliseconds to several minutes, preferably from 0.1 second to 1 minute, in particular from 1 to 10 seconds. The longer the solid substrate at a temperature below the decomposition temperature of the compound of general formula (I) or (II) is exposed to the compound of general formula (I) or (II) the more regular films formed with less defects.
The process according to the present invention yields a silicon-containing film. The film can be only one monolayer of deposited compound of formula (I), several consecutively deposited and decomposed layers of the compound of general formula (I) or (II), or several different layers wherein at least one layer in the film was generated by using the compound of general formula (I) or (II). The film can contain defects like holes. These defects, however, generally constitute less than half of the surface area covered by the film. The film is preferably an inorganic film. In order to generate an inorganic film, all organic parts have to be removed from the film as described above. The film can contain silicon oxide, silicon nitride, silicon boride, silicon carbide, or mixtures such as silicon carbide nitride, preferable the film contains silicon oxide and silicon nitride. The film can have a thickness of 0.1 nm to 1 μηη or above depending on the film formation process as described above. Preferably, the film has a thickness of 0.5 to 50 nm. The film preferably has a very uniform film thickness which means that the film thickness at different places on the substrate varies very little, usually less than 10 %, preferably less than 5 %. Fur- thermore, the film is preferably a conformal film on the surface of the substrate. Suitable methods to determine the film thickness and uniformity are XPS or ellipsometry.
The film obtained by the process according to the present invention can be used in an electronic element or in the fabrication of an electronic element. Electronic elements can have structural features of various sizes, for example from 10 nm to 100 μηη, such as 100 nm or 1 μηη. The process for forming the films for the electronic elements is particularly well suited for very fine structures. Therefore, electronic elements with sizes below 1 μηη are preferred. Examples for electronic elements are field-effect transistors (FET), solar cells, light emitting diodes, sensors, or capacitors. In optical devices such as light emitting diodes or light sensors the film according to the present invention serves to increase the reflective index of the layer which reflects light. An example for a sensor is an oxygen sensor, in which the film can serve as oxygen conductor, for example if a metal oxide film is prepared. In field-effect transistors out of metal oxide semiconductor (MOS-FET) the film can act as dielectric layer or as diffusion barrier. It has surprisingly been found out that the process according to the present invention yields silicon-containing films with decreased etch-rates, i.e. films which are more stable in etch processes in comparison to silicon-containing films. This effect is particularly pronounced if etching is performed with hydrogen fluoride (HF) or ammonium fluoride (NH4F). Such increased etching stability is of advantage in the chip production in which complex layer architectures are made by depositing films and selectively removing parts of them, for example by employing photo resists and shadow masks.
Brief Description of the Figures
Figure 1 shows the crystal structure of compound C-1.
Figure 2 shows the crystal structure of compound C-31 .
Examples
Example 1 hexane
Cp*SiBr3 + 2 TMS3SiK*2thf *■
Figure imgf000014_0001
A solution of a hypersilyl potassium salt TMSsSiK*2thf obtained according to the procedure described by Kayser et al. in Organometallics volume 21 (2002) pages 1023-1030 (220 mg, 0.510 mmol) in hexane (~5 ml) was added via a syringe to a stirred solution of (pentamethylcyclopen- tadienyl)silicon tribromide obtained according to the procedure described by Jutzi et al. in Chemische Berichte volume 121 (1988) pages 1299-1305 (99 mg, 0.246 mmol) in hexane (-10 ml). The color change from yellowish to pink/purple and a precipitation of a white solid were observed. The reaction mixture was stirred for 30 minutes. It was filtered, concentrated to about 1 ml and left to crystallize at -30 °C. Storing overnight afforded red/purple crystals of C-1 (35 mg, 0.085 mmol). Yield 35%. The crystal structure of C-1 is shown in Figure 1 . H NMR (400.13 MHz, 300 K, benzene-d6)): δ = 1 .93 (s, 15H, Cp*-CH3), 0.41 (s, 27H, Si-CH3). 3C {1H} NMR (100.61 MHz, 300 K, benzene-d6): δ = 122.45 (s, Cp*-C), 12.23 (s, Cp*-CH3), 4.94
29Si {1H} NMR (79.49 MHz, 300 K, benzene-d6): δ = 207.2 (Si:), -8.9 (Si-CH3), -1 10.0 (Si- TMSs).
Example 2
Figure imgf000014_0002
C-1 C-31 Solid 1 ,3,4,5-tetramethylimidazol-2-ylidene (8 mg, 0.064 mmol), which was prepared according to Kuhn et al., Synthesis, volume 6 (1993) page 561-562, was added at room temperature to the solution of compound C-1 (28 mg, 0.068 mmol) in CeD6 (0.6 ml). Immediately, a change of color from purple to orange/red was observed. NMR spectra show quantitative formation of the adduct. Storing the sample for a week at room temperature afforded orange crystals of the ad- duct (20 mg, 0.037 mmol).
Crystals suitable for X-ray analysis were grown from CeD6 at RT. The crystal structure is shown in figure 2. H NMR (400.13 MHz, 300 K, benzene-ok): § = 0.46 (s, 27H, Si(Si ¾)3, 1.26 (s, 3H, NHC-M?), 1.39 (s, 3H, NHC-M?), 1 .78 (br, 15H, Cp*-M?), 3.45 (s, 3H, NHC-M?), 3.47 (s, 3H, NHC-M?); 29Si{ H} NMR (79.49 MHz, 300 K, benzene-ofe): δ = -9.9 Si(5/Me3)3, -15.7 (Cp*5/), -134.2 (S/(SiMe3)3).

Claims

Claims
1. A process for producing a silicon-containing film comprising depositing the compound of general formula (I) or (II)
R3Si— Si--- X (|;
x
R3Si— si (II)
zn onto a solid substrate, wherein R is an alkyl group, an alkenyl group, an aryl group, or a silyl group,
X is an olefinic or aromatic group forming a π bond to the silicon atom,
Z is a neutral ligand, and
n is 1 or 2.
2. The process according to claim 1 , wherein at least one R is a silyl group.
3. The process according to claim 1 or 2, wherein X is a cyclopentadienyl group.
4. The process according to any of the claims 1 to 3, wherein the compound of general for- mula (I) or (II) is deposited from the gaseous or aerosol phase onto the solid substrate.
5. The process according to any of the claims 1 to 4, wherein the compound of general formula (I) or (II) is deposited from solution onto the solid substrate.
6. The process according to any of the claims 1 to 5, wherein the deposited compound of general formula (I) or (II) is decomposed by removing all organic parts.
7. The process according to claim 6, wherein decomposition is effected by exposure to ammonia, hydrazine, a hydrazine derivative, ammonia plasma, or nitrogen plasma.
8. The process according to claim 6, wherein decomposition is effected by exposure to oxygen, water, ozone or an oxygen plasma.
9. The process according any of the claims 1 to 8, wherein a sequence of depositing the compound of general formula (I) or (II) onto a solid substrate and decomposing the deposited compound of general formula (I) or (II) is performed at least twice.
10. Use of the compound of general formula (I) or (II), wherein R is an alkyl group, an alkenyl group, an aryl group, or a silyl group, X is an olefinic or aromatic group forming a π bond to the silicon atom for a film deposition process,
R3Si— Si - - - X (|;
X
Figure imgf000017_0001
Z is a neutral ligand, and
n is 1 or 2.
1 1. A compound of general formula (I) or (II), wherein R is an alkyl group, an alkenyl group, an aryl group, or a silyl group,
R3Si— Si - - - X (|;
X
R3Si— si (II)
zn
X is an olefinic or aromatic group forming a π bond to the silicon atom,
Z is a neutral ligand, and
n is 1 or 2.
12. The compound according to claim 1 1 , wherein at least one R is a silyl group.
13. The compound according to claim 1 1 or 12, wherein X is a cyclopentadienyl group.
14. The compound according to any of the claims 1 1 to 13, wherein Z is a cyclic carbene ligand.
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