WO2018196089A1 - 微型加热器及其加工方法 - Google Patents

微型加热器及其加工方法 Download PDF

Info

Publication number
WO2018196089A1
WO2018196089A1 PCT/CN2017/086296 CN2017086296W WO2018196089A1 WO 2018196089 A1 WO2018196089 A1 WO 2018196089A1 CN 2017086296 W CN2017086296 W CN 2017086296W WO 2018196089 A1 WO2018196089 A1 WO 2018196089A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
micro
hole
heater according
heat insulating
Prior art date
Application number
PCT/CN2017/086296
Other languages
English (en)
French (fr)
Inventor
罗彪
Original Assignee
广东美的制冷设备有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201720440049.8U external-priority patent/CN206735793U/zh
Priority claimed from CN201710272621.9A external-priority patent/CN107089638A/zh
Priority claimed from CN201710272620.4A external-priority patent/CN106976837B/zh
Application filed by 广东美的制冷设备有限公司 filed Critical 广东美的制冷设备有限公司
Publication of WO2018196089A1 publication Critical patent/WO2018196089A1/zh

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems

Definitions

  • the invention relates to the technical field of MEMS, and in particular to a micro heater and a processing method thereof.
  • the structure of the surface type micro-heater mainly has a closed film structure and a cantilever beam structure, and the power consumption of the cantilever beam structure is lower than that of the closed film structure, and the cantilever beam structure is caused by the thermal stress release problem of the composite film.
  • the device undulates in the horizontal plane, and as the reaction temperature of the device increases, the composite film will be thermally expanded, which will increase the local accumulation of thermal stress in the cantilever beam structure.
  • the mechanical properties of the closed film are better, the mechanical properties of the suspension film are worse, but the compatibility with the CMOS process is better.
  • Most sensors use this design because of the better mechanical strength of the closure film and the subsequent coating of sensitive materials and subsequent sensor life.
  • the present application is based on the discovery and recognition of the following facts and problems by the inventors: the inventors discovered through research that the surface type micro-heater with a closed membrane structure is damaged by the internal device during long-term work. Caused by fatigue fracture. Through further research and exploration by the inventors, it is found that the cause of fatigue fracture of the device is that the gas pressure change in the cavity of the surface-type micro-heating of the closed film structure causes the support film to be affected by the thermal stress and the pressure difference. The periodic/long-term pressure difference caused, so that the support film is prone to fatigue fracture under the action of periodic/long-term pressure difference.
  • the present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention proposes a micro-heater which is simple in structure, long in service life, and high in reliability.
  • the present invention also proposes a method of processing the above micro heater.
  • a micro-heater comprising: a substrate having a first surface and a second surface disposed opposite to each other in a thickness direction thereof, the substrate being provided with a thickness direction extending therethrough a heat insulating through hole, and the substrate is provided with a ventilation structure connecting the heat insulating through hole and the outside; a supporting film, the supporting film is disposed on the first surface of the substrate and is covered a first end of the heat insulating through hole; a heating member disposed on a surface of the supporting film away from the heat insulating through hole; a package shell, wherein the package shell is disposed on the substrate And sealing the second end of the heat insulating through hole on the second surface.
  • a micro-heater by providing a ventilation structure that communicates a heat-insulating through hole and an outside on a substrate, thereby defining a cavity defined by the heat-insulating through hole, the support film, and the package case when the micro-heater operates
  • the room is connected to the outside world. Prevents the problem of damage to the device due to the pressure difference existing inside and outside the chamber.
  • the second surface of the substrate is provided with a groove, and the ventilation structure is defined between the groove and the package.
  • the grooves are plural and disposed along a circumferential interval of the heat insulating through holes.
  • the groove has a curved or U-shaped cross section.
  • an end of the heat insulating through hole at the first surface is formed in a circular shape.
  • a cross-sectional area of the heat insulating through hole increases in a direction from the first surface to the second surface.
  • the heat insulating through hole is formed in a truncated cone shape.
  • the heating element is a heating resistance wire, and the change in curvature of the heating resistance wire in its extending direction is continuous.
  • the projection of the heating resistance wire on the support film is a round, elliptical, involute or rounded polygon at the vertex.
  • the heating resistor wire comprises a plurality of straight segments arranged parallel to each other and spaced apart, and a curved segment connecting adjacent two straight segments, the curved portion and the straight segment connecting smoothly.
  • a method of processing a micro-heater includes the steps of: S10, depositing the support film on the first surface of the substrate; S20, laying on the support film a heating member; S30, etching the substrate from the second surface of the substrate along a thickness direction thereof to form the heat insulating through hole, etching on the second surface of the substrate The substrate to form the recess; S40, connecting the package to the substrate with an adhesive to encapsulate an internal device of the micro-heater.
  • the processing process is simple, easy to operate, and high in molding quality.
  • the step of etching the insulating via and the recess is as follows: first using the dry etching technique by the first The two surfaces etch the substrate along a thickness direction thereof to form a first portion of the insulating via, and etching the substrate on the second surface of the substrate by the above dry etching technique Forming a first portion of the recess; further etching the substrate along a thickness direction of the substrate to form the thermal insulation on a first portion of the thermally insulated through hole by a wet etching technique The via hole continues to etch the substrate to form the recess on the basis of the first portion of the recess using the wet etching technique described above.
  • the dry etching technique is deep reactive ion etching.
  • the etchant of the wet etching technique is a mixture of polyethylene glycol octyl phenyl ether and tetramethyl ammonium hydroxide. Mix solution.
  • the support film is a composite film structure composed of a silicon oxide layer and a silicon nitride layer, and in the step S10, depositing a formation on the first surface of the substrate
  • the step of supporting the film is as follows: a silicon oxide layer is deposited on the first surface of the substrate by a low pressure chemical vapor deposition (LPCVD) method; and then a plasma enhanced chemical vapor deposition (PECVD) method is applied to the silicon oxide layer. A silicon nitride layer is deposited.
  • LPCVD low pressure chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • FIG. 1 is a partial perspective structural view of a micro-heater according to an embodiment of the present invention.
  • FIG. 2 is a partial perspective structural view of another angle of a micro-heater according to an embodiment of the present invention.
  • Substrate 1 first surface 11, second surface 12, thermal insulation through hole 13, first segment 131, second segment 132, aeration structure 14,
  • Heating element 3 straight section 31, curved section 32,
  • connection In the description of the present invention, it should be noted that the terms “installation”, “connected”, and “connected” are to be understood broadly, and may be fixed or detachable, for example, unless otherwise explicitly defined and defined. Connected, or integrally connected; can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • Connected, or integrally connected can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • the specific meaning of the above terms in the present invention can be understood in a specific case by those skilled in the art.
  • a micro heater according to an embodiment of the present invention will be described below with reference to FIGS. 1 and 2.
  • a micro-heater As shown in FIGS. 1 and 2, a micro-heater according to an embodiment of the first aspect of the present invention includes a substrate 1, a support film 2, a heating member 3, and a package case (not shown).
  • the above micro heater may be a face type micro heater, and the above micro heater may be applied to the field of sensors.
  • the substrate 1 has a first surface 11 and a second surface 12 which are disposed opposite each other in the thickness direction thereof, and when the substrate 1 is placed in the horizontal direction, the first surface 11 and the second surface 12 are on the substrate 1 Surface and lower surface.
  • the substrate 1 is provided with a heat insulating through hole 13 penetrating therethrough in the thickness direction, and the substrate 1 is provided with a ventilation structure 14 that communicates the heat insulating through hole 13 and the outside.
  • the substrate 1 may be a silicon substrate.
  • the support film 2 is disposed on the first surface 11 of the substrate 1 and covers the first end of the heat insulating through hole 13.
  • the middle portion of the support film 2 covers the first end of the heat insulating through hole 13, and the support film 2 is adjacent thereto.
  • a portion of the peripheral edge is supported on the substrate 1 and connected to the substrate 1.
  • the support film 2 may be a silicon oxide film, a silicon nitride film, or a silicon oxide/silicon nitride composite film.
  • the heating member 3 is provided on a surface of the support film 2 away from the heat insulating through hole 13, and the heating member 3 is supported by the support film 2 and the heating member 3 is spaced apart from the heat insulating through hole 13.
  • the heating member 3 may be in the form of a filament, a sheet or the like.
  • the substrate 1 is further provided with an electrode 4 connected to the heating member 3, and the electrode 4 can be disposed adjacent to the outer periphery of the substrate 1. For example, when the substrate 1 is square, the electrodes 4 may be provided at the four corners of the substrate 1.
  • the package is disposed on the second surface 12 of the substrate 1 and covers the second end of the heat insulating through hole 13.
  • the second end and the first end of the heat insulating through hole 13 are respectively covered by the package shell and the support film 2,
  • the package, the support film 2 and the heat insulating through hole 13 are mutually defined to define a chamber.
  • the heating member 3 works to generate heat, and the supporting film 2 separates the heating member 3 from the heat insulating through hole 13, and at this time, the two surfaces of the supporting film 2 are different.
  • the pressure, one of the two surfaces of the support film 2 faces the heating member 3 and the other surface faces the chamber, so that the support film 2 is subjected to a heat-induced pressure difference in addition to its own thermal stress.
  • the chamber can be communicated with the outside through the ventilation structure 14, whereby the gas pressure in the chamber and the gas pressure outside thereof can be reduced when the micro heater is operated.
  • the pressure difference causes the gas pressure in the chamber to converge with the pressure of the gas outside thereof, so that the pressure difference of the support film 2 can be reduced, so that the pressure on both sides of the support film 2 tends to be uniform, thereby preventing the support film. 2
  • the fatigue damage caused by the periodic/long-term pressure difference prolongs the service life of the micro heater. Improve the reliability of micro heater operation.
  • the micro-heater according to the embodiment of the present invention is provided with a ventilation structure 14 that communicates the heat-insulating through-hole 13 and the outside on the substrate 1, whereby the micro-heater operates, the heat-insulating through-hole 13, the support film 2, and
  • the chamber defined by the encapsulating case communicates with the outside to prevent the device from being easily damaged due to a pressure difference existing inside and outside the chamber.
  • the second surface 12 of the substrate 1 is provided with a groove which is extendable in the radial direction and penetrates the inner wall of the heat insulating through hole 13 and the substrate 1.
  • the peripheral wall defines a venting structure 14 between the recess and the encapsulating shell.
  • the grooves may be plural and disposed along the circumferential interval of the heat insulating through holes 13.
  • the gas in the chamber and the gas outside it can be quickly and uniformly circulated, so that the gas pressure in the chamber tends to be more uniform with the pressure of the outside air, and the gas pressure of each part in the chamber can be made.
  • the plurality of grooves may be arranged in a radial shape, thereby shortening the flow path of the gas and increasing the flow area of the gas, so that the pressure on both sides of the support film 2 tends to be uniform, which is more remarkable. The pressure difference experienced by the support film 2 is reduced.
  • the cross section of the groove may be curved or U-shaped.
  • the structure of the groove is simple and easy to be formed, and the inner wall surface of the groove is smoothed to avoid the generation of stress, thereby further improving the reliability of the micro heater.
  • the end of the insulating through-hole 13 at the first surface 11 is formed in a circular shape such that the cover of the support film 2 insulates the portion of the through-hole 13 It is also circular, that is, the portion of the support film 2 that is suspended is circular, so that the portion of the support film 2 that is in a suspended state is smooth and continuous, and the appearance of the lobes is avoided, so that the support film 2 can be prevented.
  • the stress concentration problem further improves the life of the support film 2 and the reliability of the operation of the micro heater.
  • the support film 2 as a whole may have a circular shape or a square shape.
  • the cross-sectional area of the heat insulating through hole 13 is increased in the direction from the first surface 11 to the second surface 12 (refer to the upward and downward directions in FIG. 2).
  • the overall structural stability and strength of the micro-heater can be improved, and the chip density of the micro-heater can be increased.
  • the heat insulating through holes 13 may be formed in a truncated cone shape.
  • the heat insulating through hole 13 may include a first segment 131 and a second segment 132 having different inner diameters, and the first segment 131 and the second segment 132 are each formed into a cylindrical shape, wherein the first segment 131 is adjacent to the partition.
  • the first surface 11 of the thermal via 13 and the second segment 132 are adjacent to the second surface 12 of the insulating via 13 and the inner diameter of the first segment 131 is smaller than the inner diameter of the second segment 132.
  • the heating member 3 may be a heating resistance wire whose curvature change in the direction in which the resistance wire extends is continuous. Thereby, between the various parts of the heating resistor wire The smooth connection transition can prevent the problem of structural stress concentration on the heating member 3, further improving the reliability of the micro heater.
  • the projection of the heating resistor wire on the support film 2 may be a circular, elliptical, involute or rounded polygon at the apex.
  • the heating resistor wire may include a plurality of straight segments 31 arranged parallel to each other and spaced apart, and a curved segment 32 connecting adjacent two straight segments 31, the smooth transition of the junction of the curved segments 32 and the straight segments 31.
  • the heating resistor wire can be evenly distributed on the support film 2, so that the micro-heater can obtain a large-area and high-quality uniform temperature region during operation.
  • FIGS. 1 and 2 A method of processing a micro-heater according to an embodiment of the second aspect of the present invention will now be described with reference to FIGS. 1 and 2.
  • the support film 2 described above may be deposited on the first surface 11 of the substrate 1 by chemical vapor deposition techniques, and the support film 2 may be a composite film structure.
  • a silicon oxide/silicon nitride composite film may be deposited on the first surface 11 of the substrate 1 using a low pressure chemical vapor deposition technique or a plasma enhanced chemical vapor deposition technique.
  • the first surface 11 and the second surface 12 of the substrate 1 may be polished, whereby the connection strength and reliability between the support film 2 and the substrate 1 can be enhanced. .
  • the support film 2 is a composite film structure composed of a silicon oxide layer and a silicon nitride layer.
  • the step of depositing the support film 2 on the first surface 11 of the substrate 1 is as follows: Depositing a silicon oxide layer on the first surface 11 of the substrate 1 by a low pressure chemical vapor deposition (LPCVD) method; then depositing a silicon nitride layer on the silicon oxide layer by plasma enhanced chemical vapor deposition (PECVD) A low stress composite film structure is formed.
  • LPCVD low pressure chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • the heating member 3 is disposed on the support film 2, and the heating member 3 may be deposited on the support film 2 by a sputtering process.
  • a magnetron sputtering method may be employed.
  • the heating element 3 is sputter-deposited on the support film 2 according to design requirements, and the heating element 3 may have a circular shape, an elliptical shape, an involute shape, a rounded polygon at the vertex or a serpentine shape. .
  • the substrate 1 is etched to form a groove.
  • the etching of the insulating via 13 and the recess may be performed simultaneously or sequentially (for example, the insulating via 13 may be etched first, and then the recess may be etched). Of course, simultaneous etching of the insulating via 13 and the recess can improve processing efficiency.
  • the processing process is simple, easy to operate, and high in molding quality.
  • the steps of etching the heat insulating through holes 13 and the grooves are as follows:
  • the substrate 1 is etched from the second surface 12 of the substrate 1 in the thickness direction thereof by a dry etching technique to form a first portion of the insulating via 13 by using the above dry etching technique in the second of the substrate 1.
  • the substrate 1 is etched on the surface 12 to form a first portion of the recess.
  • the wet etching technique is used to continue etching the substrate 1 along the thickness direction of the substrate 1 to form the heat insulating through holes 13 on the basis of the first portion of the heat insulating through holes 13, and the wet etching technique is used in the grooves.
  • the substrate 1 continues to be etched based on the first portion to form a recess.
  • the combination of the dry etching technique and the wet etching technique can reduce the processing cost of the micro heater and ensure the molding quality.
  • the dry etching is performed by dry etching and then wet etching, thereby avoiding possible damage of the support film 2 by dry etching; dry etching is used when etching the groove
  • the technique combined with wet etching can increase the depth of the groove and prevent the above-mentioned chamber of the micro-heater after packaging from forming a closed cavity.
  • the above dry etching technique may be deep reactive ion etching.
  • the etchant of the above wet etching technique may be a mixed solution of polyethylene glycol octyl phenyl ether and tetramethylammonium hydroxide.
  • the etching agent of the wet etching technique adopts the above mixed solution, which can eliminate the acute-angle stress concentration structure generated by the silicon anisotropy, and is advantageous for eliminating the formation of the boss on the groove. Corrosion problem.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Resistance Heating (AREA)

Abstract

一种微型加热器及其加工方法，所述微型加热器包括：衬底(1)、支撑膜(2)、加热件(3)和封装壳。衬底(1)具有沿其厚度方向相对设置的第一表面(11)和第二表面(12)，衬底(1)上设有在厚度方向贯穿其的隔热通孔(13)，且衬底(1)上设有连通隔热通孔(13)和外界的通气结构(14)，支撑膜(2)设在衬底(1)的第一表面(11)上且封盖隔热通孔(13)的第一端，加热件(3)设在支撑膜(2)的远离隔热通孔(13)的表面上，封装壳设在衬底(1)的第二表面(12)上且封盖隔热通孔(13)的第二端。

Description

微型加热器及其加工方法 技术领域
本发明涉及微机电***技术领域，尤其是涉及一种微型加热器及其加工方法。
背景技术
相关技术中，面型微加热器的结构主要有封闭膜结构和悬臂梁结构，悬臂梁结构的功耗要比封闭膜结构功耗低，而悬臂梁结构由于复合膜的热应力释放问题将导致器件在水平面上起伏，而且随着器件反应温度的升高，复合膜将受热膨胀，这些都会增加悬臂梁结构热应力局部聚集。封闭膜机械性能更好，悬膜机械性能要差些，但与CMOS工艺的兼容性好些。由于封闭薄膜机械强度更好，并且有利于后续敏感材料的涂覆及后续传感器寿命的提高，多数传感器使用这种设计方案。
然而，封闭膜结构的面型微加热器在长期的工作过程中，其内部的器件易发生损坏问题，从而影响传感器的实际使用效果和工作的可靠性。
发明内容
本申请是基于发明人对以下事实和问题的发现和认识作出的：发明人通过研究发现，封闭膜结构的面型微加热器在长期的工作过程中，其内部的器件发生损坏主要是由材料疲劳断裂导致的。通过发明人的进一步研究和探索，发现导致器件的疲劳断裂的原因在于：封闭膜结构的面型微加热的腔室内的气体压力变化导致其支撑膜除受自身热应力影响外，还受到气压差引起的周期性/长期性压力差，从而使得支撑膜在周期性/长期性压力差的作用下易发生疲劳断裂。
本发明旨在至少解决现有技术中存在的技术问题之一。为此，本发明提出一种微型加热器，所述微型加热器结构简单、使用寿命长、可靠性高。
本发明还提出了一种上述微型加热器的加工方法。
根据本发明第一方面实施例的微型加热器，包括：衬底，所述衬底具有沿其厚度方向相对设置的第一表面和第二表面，所述衬底上设有在厚度方向贯穿其的隔热通孔，且所述衬底上设有连通所述隔热通孔和外界的通气结构；支撑膜，所述支撑膜设在所述衬底的所述第一表面上且封盖所述隔热通孔的第一端；加热件，所述加热件设在所述支撑膜的远离所述隔热通孔的表面上；封装壳，所述封装壳设在所述衬底的所述第二表面上且封盖所述隔热通孔的第二端。
根据本发明实施例的微型加热器，通过在衬底上设置连通隔热通孔和外界的通气结构，由此在微型加热器工作时，由隔热通孔、支撑膜和封装壳限定的腔室与外界连通， 防止由于腔室的内外存在的压力差而导致器件易损坏的问题。
根据本发明的一些可选实施例，所述衬底的所述第二表面上设有凹槽，所述凹槽与所述封装壳之间限定出所述通气结构。
可选地，所述凹槽为多个且沿所述隔热通孔的周向间隔设置。
可选地，所述凹槽的横截面呈弧形或U形。
根据本发明的一些可选实施例，所述隔热通孔的位于所述第一表面的端部形成为圆形。
进一步地，所述隔热通孔的横截面面积在由所述第一表面至所述第二表面的方向上增大。
可选地，所述隔热通孔形成为圆台形。
根据本发明的一些可选实施例，所述加热件为加热电阻丝，所述加热电阻丝在其延伸方向上的曲率变化是连续的。
可选地，所述加热电阻丝在所述支撑膜上的投影呈圆形、椭圆形、渐开线形或顶点处倒圆角的多边形。
可选地，所述加热电阻丝包括彼此平行且间隔设置的多个直段以及连接相邻两个所述直段的弯段，所述弯段与所述直段的连接处平滑过渡。
根据本发明第二方面实施例的微型加热器的加工方法，包括如下步骤：S10、在所述衬底的所述第一表面沉积形成所述支撑膜；S20、在所述支撑膜上布设所述加热件；S30、从所述衬底的所述第二表面沿其厚度方向刻蚀所述衬底以形成所述隔热通孔，在所述衬底的所述第二表面上刻蚀所述衬底以形成所述凹槽；S40、采用粘接剂将所述封装壳与所述衬底连接以封装所述微型加热器的内部器件。
根据本发明第二方面实施例的微型加热器的加工方法，加工过程简单、易操作且成型质量高。
根据本发明的一些可选实施例，在所述S30步骤中，刻蚀所述隔热通孔及所述凹槽的步骤如下：先采用干法刻蚀技术由所述衬底的所述第二表面沿其厚度方向刻蚀所述衬底以形成所述隔热通孔的第一部分，采用上述干法刻蚀技术在所述衬底的所述第二表面上刻蚀所述衬底以形成所述凹槽的第一部分；再采用湿法刻蚀技术在所述隔热通孔的第一部分的基础上继续沿所述衬底的厚度方向刻蚀所述衬底以形成所述隔热通孔，采用上述湿法刻蚀技术在所述凹槽的第一部分的基础上继续刻蚀所述衬底以形成所述凹槽。
可选地，所述干法刻蚀技术为深反应离子刻蚀。
可选地，所述湿法刻蚀技术的腐蚀剂为聚乙二醇辛基苯基醚和四甲基氢氧化铵的混 合溶液。
根据本发明的一些可选实施例，所述支撑膜为由氧化硅层和氮化硅层构成的复合薄膜结构，在所述S10步骤中，在所述衬底的第一表面上沉积形成所述支撑膜的步骤如下：先采用低压化学气相沉积(LPCVD)的方法在衬底的第一表面沉积氧化硅层；然后再采用等离子增强化学气相沉积(PECVD)的方法在所述氧化硅层上沉积氮化硅层。
本发明的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。
附图说明
本发明的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解，其中：
图1是根据本发明实施例的微型加热器的部分立体结构图；
图2是根据本发明实施例的微型加热器的另一个角度的部分立体结构图。
附图标记：
衬底1，第一表面11，第二表面12，隔热通孔13，第一段131，第二段132，通气结构14，
支撑膜2，
加热件3，直段31，弯段32，
电极4。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
在本发明的描述中，需要理解的是，术语“中心”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
下面参考图1和图2描述根据本发明实施例的微型加热器。
如图1和图2所示，根据本发明第一方面实施例的微型加热器，包括：衬底1、支撑膜2、加热件3和封装壳(图未示出)。例如，上述微型加热器可以为面型微加热器，上述微型加热器可以应用于传感器领域。
具体而言，衬底1具有沿其厚度方向相对设置的第一表面11和第二表面12，在衬底1沿水平方向放置时，第一表面11和第二表面12为衬底1的上表面和下表面。衬底1上设有在厚度方向贯穿其的隔热通孔13，且衬底1上设有连通隔热通孔13和外界的通气结构14。可选地，衬底1可以为硅衬底。
支撑膜2设在衬底1的第一表面11上且封盖隔热通孔13的第一端，支撑膜2的中部封盖隔热通孔13的第一端，支撑膜2的邻近其外周沿的部分支撑在衬底1上且与衬底1相连。支撑膜2可以为氧化硅膜、氮化硅膜或氧化硅/氮化硅复合膜。
加热件3设在支撑膜2的远离隔热通孔13的表面上，通过支撑膜2支撑加热件3并将加热件3与隔热通孔13相隔开。可选地，加热件3可以为丝状、片状等。衬底1上还设有与加热件3相连的电极4，电极4可以邻近衬底1的外周沿设置。例如，在衬底1呈方形时，电极4可以设在衬底1的四个拐角处。
封装壳设在衬底1的第二表面12上且封盖隔热通孔13的第二端，通过封装壳、支撑膜2分别封盖隔热通孔13的第二端和第一端，使得封装壳、支撑膜2与隔热通孔13之间共同限定出腔室。
可以理解的是，在微型加热器工作的过程中，加热件3工作会产生热量，而支撑膜2将加热件3与隔热通孔13隔开，此时支撑膜2的两个表面承受不同的压力，支撑膜2的两个表面中的一个表面朝向加热件3且另一个表面朝向上述腔室，使得支撑膜2除受自身热应力影响外，还会受到的由热量引起的压力差。
通过在衬底1上设置了上述通气结构14，通过该通气结构14可以将该腔室与外界连通，由此在微型加热器工作时，可以减小上述腔室内的气体压力与其外部的气体压力的压力差，使得上述腔室内的气体压力与其外部的气体压力趋于一致，从而可以减小支撑膜2所受的压力差，使得支撑膜2的两侧压力趋于一致，从而可以防止支撑膜2因受到周期性/长期性的压力差而导致的疲劳损坏问题，延长微型加热器的使用寿命， 提高微型加热器工作的可靠性。
根据本发明实施例的微型加热器，通过在衬底1上设置连通隔热通孔13和外界的通气结构14，由此在微型加热器工作时，由隔热通孔13、支撑膜2和封装壳限定的腔室与外界连通，防止由于腔室的内外存在的压力差而导致器件易损坏的问题。
根据本发明的一些可选实施例，参照图2，衬底1的第二表面12上设有凹槽，该凹槽可以沿径向延伸并贯穿隔热通孔13的内壁及衬底1的外周壁，凹槽与封装壳之间限定出通气结构14。由此，通过在衬底1的第二表面12上设置凹槽，可以方便通气结构14的加工成型，且使得通气结构14简单。
可选地，参照图2，凹槽可以为多个且沿隔热通孔13的周向间隔设置。由此，可以使上述腔室内的气体与其外部的气体可以快速、均匀地流通，使得腔室内的气体压力与其外部的气体压力更快地趋于一致，同时可以使腔室内的各个部分的气体压力更为均匀。例如，上述多个凹槽可以呈辐射状设置，由此可以缩短气体的流动路径，同时可以增大气体的流动面积，可以更好地使得支撑膜2的两侧压力趋于一致，更为显著地减小支撑膜2所受的压力差。
可选地，上述凹槽的横截面可以呈弧形或U形。由此使得凹槽的结构简单、易于加工成型，同时使得凹槽的内壁面平滑而避免应力的产生，进一步地提高了微型加热器的可靠性。
根据本发明的一些可选实施例，参照图1和图2，隔热通孔13的位于第一表面11的端部形成为圆形，使得支撑膜2的封盖隔热通孔13的部分也为圆形，即支撑膜2中处于悬空的部分为圆形，由此可以使支撑膜2中处于悬空的部分其边缘是光滑连续的而避免了凸角的出现，从而可以防止支撑膜2的应力集中问题，进一步地提高支撑膜2的寿命及微型加热器工作的可靠性。可选地，支撑膜2整体可以呈圆形或方形。
进一步地，隔热通孔13的横截面面积在由第一表面11至第二表面12的方向上(参照图2中的由上向下的方向上)增大。由此，可以提高微型加热器的整体结构稳定性及强度，同时可以提高微型加热器的芯片密度。
例如，隔热通孔13可以形成为圆台形。
又例如，参照图2，隔热通孔13可以包括内径不同的第一段131和第二段132，上述第一段131和第二段132均形成为圆柱形，其中第一段131邻近隔热通孔13的第一表面11，第二段132邻近隔热通孔13的第二表面12，第一段131的内径小于第二段132的内径。
根据本发明的一些可选实施例，参照图1，加热件3可以为加热电阻丝，加热电阻丝在其延伸方向上的曲率变化是连续的。由此，使得加热电阻丝的各个部分之间均为 平滑连接过渡，可以防止加热件3上出现结构应力集中的问题，进一步地提高微型加热器的可靠性。
例如，加热电阻丝在支撑膜2上的投影可以呈圆形、椭圆形、渐开线形或顶点处倒圆角的多边形。
又例如，参照图1，加热电阻丝可以包括彼此平行且间隔设置的多个直段31以及连接相邻两个直段31的弯段32，弯段32与直段31的连接处平滑过渡。由此，可以使加热电阻丝均匀分布在支撑膜2上，使得微型加热器在工作时可以获得较大面积且高质量的均温区域。
下面参照图1和图2描述根据本发明第二方面实施例的微型加热器的加工方法。
根据本发明第二方面实施例的微型加热器的加工方法，包括如下步骤：
S10、在衬底1的第一表面11沉积形成支撑膜2。可以利用化学气相沉积技术在衬底1的第一表面11沉积形成上述支撑膜2，该支撑膜2可以为复合膜结构。例如，可以采用低压化学气相沉积技术或等离子体增强化学气相沉积技术在衬底1的第一表面11上沉积形成氧化硅/氮化硅复合膜。其中，在衬底1上沉积支撑膜2之前，可以对衬底1的第一表面11和第二表面12进行抛光，由此可以增强支撑膜2与衬底1之间的连接强度和可靠性。
可选地，支撑膜2为由氧化硅层和氮化硅层构成的复合薄膜结构，在所述S10步骤中，在衬底1的第一表面11上沉积形成支撑膜2的步骤如下：先采用低压化学气相沉积(LPCVD)的方法在衬底1的第一表面11沉积氧化硅层；然后再采用等离子增强化学气相沉积(PECVD)的方法在氧化硅层上沉积氮化硅层，由此形成低应力的复合薄膜结构。
S20、在支撑膜2上布设加热件3，可以利用溅射工艺在支撑膜2上沉积形成加热件3，例如可以采用磁控溅射的方法。根据设计要求在支撑膜2上溅射沉积成片状或丝状的加热件3，加热件3的图形形状可以为圆形、椭圆形、渐开线形、顶点处倒圆角的多边形或蛇形。
S30、从衬底1的第二表面12沿其厚度方向(参照图2中的由下向上的方向)刻蚀衬底1以形成隔热通孔13，在衬底1的第二表面12上刻蚀衬底1以形成凹槽。隔热通孔13和凹槽的刻蚀可以同时进行，也可以先后进行(例如，可以先刻蚀隔热通孔13，再刻蚀凹槽)。当然，隔热通孔13和凹槽同时刻蚀可以提高加工效率。
S40、采用粘接剂将封装壳与衬底1连接以封装微型加热器的内部器件。在封装时，在封装壳上涂抹粘接剂，再将封装壳与衬底1的第二表面12粘接。在封装壳上涂抹粘接剂时，使得封装壳上的粘接区域的粘接剂厚度能够均一且小于凹槽的深度，以防止 封装壳与衬底1粘接时凹槽被粘接剂填满而使得微型加热器的通气结构14被堵住。
根据本发明第二方面实施例的微型加热器的加工方法，加工过程简单、易操作且成型质量高。
根据本发明的一些可选实施例，在上述S30步骤中，刻蚀隔热通孔13及凹槽的步骤如下：
先采用干法刻蚀技术由衬底1的第二表面12沿其厚度方向刻蚀衬底1以形成隔热通孔13的第一部分，采用上述干法刻蚀技术在衬底1的第二表面12上刻蚀衬底1以形成凹槽的第一部分。
再采用湿法刻蚀技术在隔热通孔13的第一部分的基础上继续沿衬底1的厚度方向刻蚀衬底1以形成隔热通孔13，采用上述湿法刻蚀技术在凹槽的第一部分的基础上继续刻蚀衬底1以形成凹槽。
由此，通过干法刻蚀技术与湿法刻蚀技术相结合的技术，可以降低微型加热器的加工成本，并可以保证成型质量。而且，在刻蚀隔热通孔13时先采用干法刻蚀再采用湿法刻蚀，可以避免干法刻蚀对支撑膜2可能造成的损坏；在刻蚀凹槽时采用干法刻蚀与湿法刻蚀相结合的技术，可以提高凹槽的深度，避免封装后微型加热器的上述腔室形成密闭腔。
可选地，上述干法刻蚀技术可以为深反应离子刻蚀。
可选地，上述湿法刻蚀技术的腐蚀剂可以为聚乙二醇辛基苯基醚和四甲基氢氧化铵的混合溶液。例如，在衬底1为硅衬底时，湿法刻蚀技术的腐蚀剂采用上述的混合溶液，可以消除硅各向异性产生的锐角应力集中结构，并且有利于消除凹槽上形成凸台而引起的腐蚀问题。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示意性实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
尽管已经示出和描述了本发明的实施例，本领域的普通技术人员可以理解：在不脱离本发明的原理和宗旨的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由权利要求及其等同物限定。

Claims (15)

  1. 一种微型加热器，其特征在于，包括：
    衬底，所述衬底具有沿其厚度方向相对设置的第一表面和第二表面，所述衬底上设有在厚度方向贯穿其的隔热通孔，且所述衬底上设有连通所述隔热通孔和外界的通气结构；
    支撑膜，所述支撑膜设在所述衬底的所述第一表面上且封盖所述隔热通孔的第一端；
    加热件，所述加热件设在所述支撑膜的远离所述隔热通孔的表面上；
    封装壳，所述封装壳设在所述衬底的所述第二表面上且封盖所述隔热通孔的第二端。
  2. 根据权利要求1所述的微型加热器，其特征在于，所述衬底的所述第二表面上设有凹槽，所述凹槽与所述封装壳之间限定出所述通气结构。
  3. 根据权利要求2所述的微型加热器，其特征在于，所述凹槽为多个且沿所述隔热通孔的周向间隔设置。
  4. 根据权利要求2或3所述的微型加热器，其特征在于，所述凹槽的横截面呈弧形或U形。
  5. 根据权利要求1-4中任一项所述的微型加热器，其特征在于，所述隔热通孔的位于所述第一表面的端部形成为圆形。
  6. 根据权利要求5所述的微型加热器，其特征在于，所述隔热通孔的横截面面积在由所述第一表面至所述第二表面的方向上增大。
  7. 根据权利要求6所述的微型加热器，其特征在于，所述隔热通孔形成为圆台形。
  8. 根据权利要求1-7中任一项所述的微型加热器，其特征在于，所述加热件为加热电阻丝，所述加热电阻丝在其延伸方向上的曲率变化是连续的。
  9. 根据权利要求8所述的微型加热器，其特征在于，所述加热电阻丝在所述支撑膜上的投影呈圆形、椭圆形、渐开线形或顶点处倒圆角的多边形。
  10. 根据权利要求8所述的微型加热器，其特征在于，所述加热电阻丝包括彼此平行且间隔设置的多个直段以及连接相邻两个所述直段的弯段，所述弯段与所述直段的连接处平滑过渡。
  11. 一种根据权利要求2-10中任一项所述的微型加热器的加工方法，其特征在于，包括如下步骤：
    S10、在所述衬底的所述第一表面沉积形成所述支撑膜；
    S20、在所述支撑膜上布设所述加热件；
    S30、从所述衬底的所述第二表面沿其厚度方向刻蚀所述衬底以形成所述隔热通孔，在所述衬底的所述第二表面上刻蚀所述衬底以形成所述凹槽；
    S40、采用粘接剂将所述封装壳与所述衬底连接以封装所述微型加热器的内部器件。
  12. 根据权利要求11所述的微型加热器的加工方法，其特征在于，在所述S30步骤中，刻蚀所述隔热通孔及所述凹槽的步骤如下：
    先采用干法刻蚀技术由所述衬底的所述第二表面沿其厚度方向刻蚀所述衬底以形成所述隔热通孔的第一部分，采用上述干法刻蚀技术在所述衬底的所述第二表面上刻蚀所述衬底以形成所述凹槽的第一部分；
    再采用湿法刻蚀技术在所述隔热通孔的第一部分的基础上继续沿所述衬底的厚度方向刻蚀所述衬底以形成所述隔热通孔，采用上述湿法刻蚀技术在所述凹槽的第一部分的基础上继续刻蚀所述衬底以形成所述凹槽。
  13. 根据权利要求12所述的微型加热器的加工方法，其特征在于，所述干法刻蚀技术为深反应离子刻蚀。
  14. 根据权利要求12或13所述的微型加热器的加工方法，其特征在于，所述湿法刻蚀技术的腐蚀剂为聚乙二醇辛基苯基醚和四甲基氢氧化铵的混合溶液。
  15. 根据权利要求11-14中任一项所述的微型加热器的加工方法，其特征在于，所述支撑膜为由氧化硅层和氮化硅层构成的复合薄膜结构，在所述S10步骤中，在所述衬底的第一表面上沉积形成所述支撑膜的步骤如下：
    先采用低压化学气相沉积(LPCVD)的方法在衬底的第一表面沉积氧化硅层；
    然后再采用等离子增强化学气相沉积(PECVD)的方法在所述氧化硅层上沉积氮化硅层。
PCT/CN2017/086296 2017-04-24 2017-05-27 微型加热器及其加工方法 WO2018196089A1 (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
CN201720440049.8U CN206735793U (zh) 2017-04-24 2017-04-24 微型加热器
CN201720440049.8 2017-04-24
CN201710272620.4 2017-04-24
CN201710272621.9A CN107089638A (zh) 2017-04-24 2017-04-24 微型加热器及其加工方法
CN201710272620.4A CN106976837B (zh) 2017-04-24 2017-04-24 微型加热器及其加工方法
CN201710272621.9 2017-04-24

Publications (1)

Publication Number Publication Date
WO2018196089A1 true WO2018196089A1 (zh) 2018-11-01

Family

ID=63919510

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/086296 WO2018196089A1 (zh) 2017-04-24 2017-05-27 微型加热器及其加工方法

Country Status (1)

Country Link
WO (1) WO2018196089A1 (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000310553A (ja) * 1999-04-27 2000-11-07 Yazaki Corp フローセンサ
CN101057309A (zh) * 2004-09-13 2007-10-17 代夫特工业大学 用于透射电子显微镜和加热元件的微反应器及其制造方法
CN101665231A (zh) * 2009-09-18 2010-03-10 上海芯敏微***技术有限公司 一种基于(100)硅片采用双面对穿腐蚀制造薄膜器件结构及方法
CN103035833A (zh) * 2011-09-30 2013-04-10 中国科学院上海微***与信息技术研究所 一种平面型半导体热电芯片及制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000310553A (ja) * 1999-04-27 2000-11-07 Yazaki Corp フローセンサ
CN101057309A (zh) * 2004-09-13 2007-10-17 代夫特工业大学 用于透射电子显微镜和加热元件的微反应器及其制造方法
CN101665231A (zh) * 2009-09-18 2010-03-10 上海芯敏微***技术有限公司 一种基于(100)硅片采用双面对穿腐蚀制造薄膜器件结构及方法
CN103035833A (zh) * 2011-09-30 2013-04-10 中国科学院上海微***与信息技术研究所 一种平面型半导体热电芯片及制备方法

Similar Documents

Publication Publication Date Title
US20110131794A1 (en) Methods for making capacitive microphone
JP6440290B2 (ja) 亀裂抵抗性膜構造を有する微小電気機械システムデバイスおよびその作製方法
WO2013171961A1 (ja) 電動機アセンブリ及びその製造方法
CN104024816B (zh) 具有可变形膜片和阻抗较强变形的保护部的微机械结构
JP2013512404A (ja) グルーブタイプ真空断熱材及びその製造方法
WO2016077966A1 (zh) 电压力锅
US11787688B2 (en) Methods of forming MEMS diaphragms including corrugations
CN105338457B (zh) Mems麦克风及其形成方法
WO2018196089A1 (zh) 微型加热器及其加工方法
CN106976837B (zh) 微型加热器及其加工方法
JP2010103701A (ja) Ｍｅｍｓセンサ
EP2973685B1 (en) Mems device having a getter
US11137364B2 (en) Thermally insulated microsystem
JP6903510B2 (ja) タイヤ空気圧検知装置
CN206735793U (zh) 微型加热器
CN111684252B (zh) 具有悬浮膜并在锚边缘具有圆角的电容式压力传感器和其他器件
WO2020118969A1 (zh) 天花机
CN218059190U (zh) 化学气相沉积炉
CN106744640B (zh) 具有台阶状结构和真空腔体的微热板及其加工方法
CN107084807A (zh) 一种压阻式的微机械压力传感器芯片及其制备方法
JP2002158362A (ja) 半導体圧力センサの製造方法
JP2011082483A (ja) ダイアフラム素子及びダイアフラム素子の製造方法
CN107337174B (zh) 一种多晶硅振膜结构的制作方法
CN104401931A (zh) 微型加热器及其制造方法
CN107089638A (zh) 微型加热器及其加工方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17906964

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 05.03.2020)

122 Ep: pct application non-entry in european phase

Ref document number: 17906964

Country of ref document: EP

Kind code of ref document: A1