WO2018181713A1 - シリカ粒子分散液の製造方法 - Google Patents
シリカ粒子分散液の製造方法 Download PDFInfo
- Publication number
- WO2018181713A1 WO2018181713A1 PCT/JP2018/013240 JP2018013240W WO2018181713A1 WO 2018181713 A1 WO2018181713 A1 WO 2018181713A1 JP 2018013240 W JP2018013240 W JP 2018013240W WO 2018181713 A1 WO2018181713 A1 WO 2018181713A1
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- WO
- WIPO (PCT)
- Prior art keywords
- silica
- particles
- liquid
- particle dispersion
- producing
- Prior art date
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 372
- 239000002245 particle Substances 0.000 title claims abstract description 222
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 159
- 239000007788 liquid Substances 0.000 title claims abstract description 95
- 239000006185 dispersion Substances 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 55
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 64
- 239000003054 catalyst Substances 0.000 claims abstract description 54
- 238000006243 chemical reaction Methods 0.000 claims abstract description 54
- -1 silane alkoxide Chemical class 0.000 claims abstract description 43
- 229910000077 silane Inorganic materials 0.000 claims abstract description 38
- 239000003513 alkali Substances 0.000 claims abstract description 37
- 230000008859 change Effects 0.000 claims abstract description 33
- 239000000126 substance Substances 0.000 claims description 34
- 239000011164 primary particle Substances 0.000 claims description 28
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 abstract description 18
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 39
- 238000000034 method Methods 0.000 description 31
- 238000005498 polishing Methods 0.000 description 21
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 20
- 238000001035 drying Methods 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 15
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 15
- 239000002184 metal Substances 0.000 description 13
- 239000003960 organic solvent Substances 0.000 description 13
- 239000000203 mixture Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 230000007062 hydrolysis Effects 0.000 description 10
- 238000006460 hydrolysis reaction Methods 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 238000000635 electron micrograph Methods 0.000 description 9
- 238000006068 polycondensation reaction Methods 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 8
- 229910021529 ammonia Inorganic materials 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 239000002210 silicon-based material Substances 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 238000000691 measurement method Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 239000000047 product Substances 0.000 description 6
- 239000006228 supernatant Substances 0.000 description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 description 5
- 230000036962 time dependent Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- 150000001342 alkaline earth metals Chemical class 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 239000012467 final product Substances 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000000746 purification Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229910052776 Thorium Inorganic materials 0.000 description 3
- 229910052770 Uranium Inorganic materials 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 150000003863 ammonium salts Chemical class 0.000 description 3
- 239000003125 aqueous solvent Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000008119 colloidal silica Substances 0.000 description 3
- 230000012010 growth Effects 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
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- 229910052726 zirconium Inorganic materials 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 2
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 2
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- 125000003118 aryl group Chemical group 0.000 description 2
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- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- 150000002148 esters Chemical class 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 230000003301 hydrolyzing effect Effects 0.000 description 2
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000000108 ultra-filtration Methods 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
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- 230000032683 aging Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910000102 alkali metal hydride Inorganic materials 0.000 description 1
- 150000008046 alkali metal hydrides Chemical class 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 229910052792 caesium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
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- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- ZMAPKOCENOWQRE-UHFFFAOYSA-N diethoxy(diethyl)silane Chemical compound CCO[Si](CC)(CC)OCC ZMAPKOCENOWQRE-UHFFFAOYSA-N 0.000 description 1
- CPDXSJXOUOKNJT-UHFFFAOYSA-N diethoxy(difluoro)silane Chemical compound CCO[Si](F)(F)OCC CPDXSJXOUOKNJT-UHFFFAOYSA-N 0.000 description 1
- ZXPDYFSTVHQQOI-UHFFFAOYSA-N diethoxysilane Chemical compound CCO[SiH2]OCC ZXPDYFSTVHQQOI-UHFFFAOYSA-N 0.000 description 1
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- NMWRCNKLODDUMW-UHFFFAOYSA-N difluoromethyl(dimethoxy)silane Chemical compound FC(F)[SiH](OC)OC NMWRCNKLODDUMW-UHFFFAOYSA-N 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- YQGOWXYZDLJBFL-UHFFFAOYSA-N dimethoxysilane Chemical compound CO[SiH2]OC YQGOWXYZDLJBFL-UHFFFAOYSA-N 0.000 description 1
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- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 229940093499 ethyl acetate Drugs 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- MYEJNNDSIXAGNK-UHFFFAOYSA-N ethyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](CC)(OC(C)C)OC(C)C MYEJNNDSIXAGNK-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- JKGQTAALIDWBJK-UHFFFAOYSA-N fluoro(trimethoxy)silane Chemical compound CO[Si](F)(OC)OC JKGQTAALIDWBJK-UHFFFAOYSA-N 0.000 description 1
- 229910052730 francium Inorganic materials 0.000 description 1
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- 150000002334 glycols Chemical class 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
- 229960003493 octyltriethoxysilane Drugs 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- VGFFOXZVNHTHIJ-UHFFFAOYSA-N propan-2-yloxysilane triethoxy(methyl)silane Chemical compound C(C)(C)O[SiH3].C[Si](OCC)(OCC)OCC VGFFOXZVNHTHIJ-UHFFFAOYSA-N 0.000 description 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- ZUEKXCXHTXJYAR-UHFFFAOYSA-N tetrapropan-2-yl silicate Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)OC(C)C ZUEKXCXHTXJYAR-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- XVYIJOWQJOQFBG-UHFFFAOYSA-N triethoxy(fluoro)silane Chemical compound CCO[Si](F)(OCC)OCC XVYIJOWQJOQFBG-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- BOVWGKNFLVZRDU-UHFFFAOYSA-N triethoxy(trifluoromethyl)silane Chemical compound CCO[Si](OCC)(OCC)C(F)(F)F BOVWGKNFLVZRDU-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- ORVBHOQTQDOUIW-UHFFFAOYSA-N trimethoxy(trifluoromethyl)silane Chemical compound CO[Si](OC)(OC)C(F)(F)F ORVBHOQTQDOUIW-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
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-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
- C01B33/141—Preparation of hydrosols or aqueous dispersions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/30—Particle morphology extending in three dimensions
- C01P2004/32—Spheres
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a method for producing a dispersion containing silica particles, and more particularly, to a method for producing a dispersion containing silica particles useful for an abrasive used for polishing or the like when forming a metal wiring layer in a semiconductor integrated circuit.
- a wiring interlayer film (insulating film) is formed on a substrate such as a silicon wafer, and a groove pattern for metal wiring is formed on the wiring interlayer film (insulating film). Then, a barrier metal layer such as tantalum nitride (TaN) is formed by sputtering or the like, and then copper for metal wiring is formed by chemical vapor deposition (CVD) or the like.
- a barrier metal layer such as tantalum nitride (TaN) is formed by sputtering or the like, and then copper for metal wiring is formed by chemical vapor deposition (CVD) or the like.
- a barrier metal layer such as TaN
- unnecessary copper and barrier metal sometimes referred to as a sacrificial layer
- CMP chemical mechanical polishing
- the abrasive used in this CMP method usually has a polishing rate of metal for wiring / circuits in a dispersion containing spherical polishing particles having an average particle diameter of about 5 to 300 nm made of a metal oxide such as silica.
- a polishing rate of metal for wiring / circuits in a dispersion containing spherical polishing particles having an average particle diameter of about 5 to 300 nm made of a metal oxide such as silica.
- Manufactured by adding additives such as an oxidizer and organic acid for quickening.
- an organic solvent containing tetramethoxysilane and a solvent containing an alkali catalyst and water are converted into an organic solvent containing an alkali catalyst and water.
- a step (a) of producing a silica sol by hydrolyzing and polycondensing tetramethoxysilane by adding, and a step (b) of heating the silica sol dispersion medium until it reaches the boiling point of water and replacing it with water A method has been proposed (see Patent Document 4).
- the silica particles used as the abrasive spherical particles and irregular shapes are manufactured.
- the irregularly shaped silica particles are suitably used as an abrasive for obtaining a polishing rate.
- irregularly shaped silica particles having an average particle size of secondary particles of 1.5 to 3.0 times the average particle size of primary particles are obtained.
- methyl silicate or a mixture of methyl silicate and methanol is mixed in water, methanol and ammonia, or a mixed solvent composed of water, methanol, ammonia and ammonium salt.
- the ammonium ion content in the solvent is 0.5 to 3% by weight, based on the total weight of the solvent, and is added dropwise with stirring for 10 to 40 minutes so that the reaction is carried out at a temperature of 10 to 30 ° C.
- a method of reacting methyl silicate with water has been proposed (see Patent Document 5). According to this method, it is said that colloidal silica having a minor axis of 10 to 200 nm and a major axis / minor axis ratio of 1.4 to 2.2 can be produced.
- tetraalkoxysilane or a mixture of tetraalkoxysilane and a water-miscible organic solvent is continuously added as a raw material to hydrolyze and condense the total amount of these raw materials.
- a method for producing peanut-like twin colloidal silica particles which is controlled so as to be in a range of 2.0 to 6.0 times the amount of raw material added required for coalescence of two single silica particles in the initial stage of the reaction. It has been proposed (see Patent Document 6).
- Patent Document 4 produces high-purity silica particles with high productivity, but in step (a), unreacted substances such as oligomers of silane alkoxide that do not grow to the production silica particles are produced.
- step (b) for removing this is essential, and there are problems in terms of production efficiency and cost.
- Patent Document 5 has a problem that unreacted products are generated. Further, the concentration of silica particles in the produced silica particle dispersion is extremely low. Furthermore, those in which five or more primary particles are connected are spherical and do not form a chain (paragraph [0011]).
- Patent Documents 6 and 7 have a problem that unreacted products are generated. Furthermore, the method of Patent Document 7 is a special method using a silane alkoxide condensate as a raw material.
- the present invention provides a method for producing a silica particle dispersion that efficiently produces silica particles while suppressing the formation of unreacted substances.
- the reaction is always carried out under the same conditions. be able to. Thereby, the production
- a liquid I containing silica seed particles having an average particle diameter of 3 to 100 nm is prepared in a container in advance, and this liquid I contains a liquid A containing a silane alkoxide, an alkali catalyst, and water.
- This manufacturing method satisfies the following conditions (1) and (2).
- (1) The rate of change relative to the initial value of the molar ratio of the alkali catalyst to the silica component in the reaction system from the start of addition (reaction start) to the end is 0.90 to 1.10.
- the rate of change relative to the initial value of the molar ratio of water to silica component in the reaction system during the period from the start of addition (reaction start) to the end is 0.90 to 1.10.
- the rate of change relative to the initial value of the molar ratio of the alkali catalyst to the silica component in the reaction system from the start of addition (reaction start) to the end is simply referred to as “catalyst rate change rate”.
- the rate of change relative to the initial value of the molar ratio of water to silica component in the reaction system during the period from the start of addition (reaction start) to the end is simply referred to as “water rate change rate”.
- the silica component in the reaction system means silica seed particles and a hydrolyzed polycondensate of added silane alkoxide.
- the mass of the silica seed particles in the liquid I is calculated from the mass before and after the collected sample 5 g was dried at 1000 ° C. for 1 hour.
- the catalyst ratio (alkali catalyst / silica component) with respect to the silica component in the reaction system, and the water ratio (water / silica component) with respect to the silica component are the silica component based on the measured values of the mass of the silica seed particles and the addition amount of the silane alkoxide ( Obtained based on the molar amount as silicon (Si)).
- the calculation is performed assuming that the hydrolysis and polycondensation reaction of the silane alkoxide occurs instantaneously (see the following formula), and that the alkali catalyst is not released out of the system.
- the rate of change of these ratios is calculated by a numerical value obtained by calculating the molar ratio in the reaction system from the measured amount of addition at predetermined time intervals (for example, every 10 minutes) and dividing by the initial value.
- the initial value refers to the value of the molar ratio of the alkali catalyst or water based on silicon (Si) of the silica seed particles of liquid I.
- the production of unreacted substances can be suppressed and silica particles can be produced efficiently. Moreover, when manufacturing the irregular-shaped silica particle which the primary particle connected, the particle
- the figure explaining the calculation method of the average particle diameter in this invention The figure which shows the time-dependent change of the catalyst ratio in Example 1, and a water ratio.
- the method for producing a silica particle dispersion of the present invention comprises a step of preparing a liquid I containing silica seed particles having an average particle size of 3 to 100 nm, a liquid A containing a silane alkoxide, and an alkali catalyst. And a step of producing silica particles by growing silica seed particles by simultaneously adding the liquid B containing water.
- the change rate catalyst ratio change rate
- the change rate with respect to the initial value of the molar ratio of the alkali catalyst to the silica component in the reaction system during the period from the start to the end of addition is 0.90 to 1.10.
- the change rate (water ratio change rate) with respect to the initial value of the molar ratio of water to the silica component in the reaction system during the period is set to 0.90 to 1.10.
- the start of addition in the production method of the present invention means the time when the addition of the liquid A and the liquid B to the liquid I is started.
- finish of addition means the time when addition of these liquid A and liquid B was complete
- the reaction period from the start to the end of addition by making the amount of alkali catalyst and water relative to the silica component of the reaction system constant, the reaction always proceeds under the same conditions, thereby suppressing the formation of unreacted substances. Therefore, the step of removing unreacted substances can be omitted, and a silica particle dispersion can be efficiently produced. Further, since the produced silica particle dispersion does not contain an unreacted material, an abrasive having excellent stability as a silica particle dispersion and an abrasive is obtained.
- the production of unreacted substances is further suppressed, and the particles controlled to the target shape are produced in a shorter time. it can.
- the degree of coupling number
- target particles can be produced with high accuracy.
- silica particles having the same size and shape can be obtained in a time of about 1/2 to 1/10 compared with the conventional method not using seed particles.
- the liquid I contains at least silica seed particles and an organic solvent, and preferably contains water and an alkali catalyst.
- the liquid I is preferably one in which the amount and ratio of water and alkali catalyst are adjusted. That is, considering the molar ratio of alkali catalyst / silane alkoxide and water / silane alkoxide of liquid A and liquid B (added liquid) to be added, the molar ratio of alkali catalyst / silica seed particles and water / silica seed particles of liquid I Is preferably adjusted. Thereby, the amount of the alkali catalyst and water with respect to the silica component in the reaction system can be made constant during the reaction period from the start to the end of the addition.
- organic solvent examples include alcohol, ketone, ether, glycol, ester and the like, and alcohol is preferable. More specifically, alcohols such as methanol, ethanol, propanol and butanol, ketones such as methyl ethyl ketone and methyl isobutyl ketone, glycol ethers such as methyl cellosolve, ethyl cellosolve and propylene glycol monopropyl ether, ethylene glycol, propylene glycol and hexylene Examples include glycols such as glycol, and esters such as methyl acetate, ethyl acetate, methyl lactate, and ethyl lactate. Among these, methanol or ethanol is more preferable, and methanol is particularly preferable. These organic solvents may be used individually by 1 type, and may be used in mixture of 2 or more types.
- Alkali catalysts include ammonia, amines, alkali metal hydrides, alkaline earth metal hydrides, alkali metal hydroxides, alkaline earth metal hydroxides, quaternary ammonium compounds, amine coupling agents, etc.
- the compound which shows can be used, and it is preferable to use ammonia.
- silica seed particles contained in the liquid I include those produced by hydrolysis and polycondensation of a silane alkoxide represented by the following formula [1].
- X represents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 8 carbon atoms, an aryl group or a vinyl group
- R represents a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, an aryl group or a vinyl group
- n is an integer of 0 to 3.
- silane alkoxide represented by the above formula [1] in addition to tetramethoxysilane and tetraethoxysilane, tetraisopropoxysilane, tetrabutoxysilane, tetraoctoxysilane, methyltrimethoxysilane, methyltriethoxysilane, methyltriethoxysilane Isopropoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltriisopropoxysilane, octyltrimethoxysilane, octyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, Trimethoxysilane, triethoxysilane, triisopropoxysilane, fluorotrimethoxy
- TMOS tetramethoxysilane
- TEOS tetraethoxysilane
- the average particle diameter of the silica seed particles is 3 to 100 nm, preferably 5 to 50 nm, and more preferably 10 to 30 nm. If the particle size of the seed particles is within this range, particles controlled to the target shape can be easily produced. In particular, when producing irregularly shaped particles in which primary particles are connected, the degree of connection (number) is set. Easy to control. ⁇ Measurement method of average particle size> The average particle diameter is obtained by taking an electron micrograph, measuring the longest diameter of 100 arbitrary particles, and obtaining the average value.
- Silica seed particles can be produced under conditions different from the conditions during the growth phase of the silica particles of the present invention. That is, in the present invention, seed particles can be manufactured using conditions suitable for the production of seed particles, and can be manufactured using other conditions suitable for manufacturing the final product in the particle growth phase. . Therefore, the production efficiency can be improved, and the intended final product can be obtained with higher accuracy. In addition, when manufacturing as a series of processes without using seed particles, it is necessary to consider the final product, and to manufacture the final product under certain conditions suitable for it. Accuracy cannot be obtained.
- the seed particle dispersion can be produced under conditions different from the particle growth period, it is possible to produce a dispersion with little unreacted material. Therefore, the content of the unreacted material in the bed preparation prepared using the seed particle dispersion separately produced in this way is very small.
- the content of unreacted substances in the liquid I is, for example, preferably 200 ppm or less, more preferably 150 ppm or less, and further preferably 100 ppm or less.
- the produced seed particle dispersion may be subjected to a purification treatment such as ultrafiltration to further reduce the content of unreacted substances. Since the liquid I contains almost no unreacted material, the amount of unreacted material in the silica dispersion after particle growth is very small.
- the unreacted material means a silicon-containing compound that has not reacted to the target silica particles (seed particles).
- seed particles For example, unreacted raw material silane alkoxide, its low molecular hydrolyzate (oligomer), particles much smaller than the intended particles, and the like.
- silica particle aqueous dispersion was centrifuged at a set temperature of 10 ° C. and 1,370,000 rpm (1,000,000 G) for 30 minutes using a small ultracentrifuge CS150GXL manufactured by Hitachi Koki Co., Ltd. Means a silicon-containing compound in the supernatant.
- the method for producing the seed particle dispersion can employ conditions different from the growth period, desired seed particles can be produced.
- desired seed particles can be produced.
- the sphericity of the silica seed particles is preferably 0.90 to 1.00.
- the particle size variation coefficient (CV value) of the silica seed particles is preferably 8% or less.
- ⁇ Measurement method of particle size variation coefficient Obtained by the following formula.
- the individual particle size and the average particle size when calculating the particle size variation coefficient (CV value) are calculated by the method described in the above section “Measurement method of average particle size”.
- the silica seed particle concentration in the liquid I is preferably 1% by mass or more, more preferably 3% by mass or more, and further preferably 5 to 10% by mass from the viewpoint of efficiently producing deformed particles in which primary particles are connected.
- ⁇ Method for Measuring Silica Seed Particle Concentration in Liquid I >> The silica seed particle concentration is obtained by drying a sample of 5 g at 1000 ° C. for 1 hour, and calculating from the mass before and after drying according to the following formula.
- Silica seed particle concentration (% by mass) (mass after drying / mass before drying) ⁇ 100
- the silica seed particle concentration is set to a value obtained by the above method.
- the liquid A contains silane alkoxide, and preferably further contains an organic solvent. Usually, it consists essentially of a silane alkoxide or consists essentially of two components, a silane alkoxide and an organic solvent. “Consisting essentially of silane alkoxide” and “substantially consisting of two components” may include impurities inevitably included from the production process of silane alkoxide and organic solvent, but otherwise included. For example, 99% by mass or more, and preferably 99.5% by mass or more.
- silane alkoxide examples include those represented by the above formula [1], and specific silane alkoxides can be the same as those used for producing seed particles.
- organic solvent those exemplified for the liquid I can be used, and an organic solvent having the same composition as the liquid I is preferably used. That is, when methanol is used for the liquid I, it is preferable to use methanol also for the liquid A.
- the concentration of the silane alkoxide with respect to the organic solvent is, for example, 1.5 to 6.4 mol / L, and preferably 2.0 to 6.0 mol / L. .
- the liquid B contains an alkali catalyst and water, and is usually substantially composed of two components. Note that “consisting essentially of two components” has the same meaning as described for the liquid A.
- alkali catalyst those exemplified for the liquid I can be used, and ammonia is preferably used.
- the concentration of the alkali catalyst with respect to the water in the liquid B is, for example, 1 to 24 mol / L, and preferably 3 to 15 mol / L.
- the method for producing a silica particle dispersion of the present invention satisfies the following two conditions. (1) The catalyst ratio change rate is 0.90 to 1.10. (2) The water ratio change rate is 0.90 to 1.10.
- the catalyst rate change rate and the water rate change rate are reduced as much as possible to make them constant.
- the molar ratio of alkali catalyst / silane alkoxide, water / silane alkoxide so that the molar ratio of the alkali catalyst / silica seed particles and water / silica seed particles in the liquid I does not vary depending on the reaction.
- the method using the liquid A and the liquid B prepared is prepared. Further, in the period from the start to the end of addition, there may be mentioned a method of keeping the addition conditions such as the addition rates of the liquid A and the liquid B as constant as possible and suppressing the catalyst rate change rate and the water rate change rate. For example, a change in the addition rate of the liquid A and the liquid B can be suppressed by using a high-precision pump.
- this silica particle dispersion liquid contains almost no unreacted substance, it is excellent in the stability as a silica particle dispersion liquid and an abrasive
- the catalyst ratio change rate is 0.90 to 1.10, preferably 0.95 to 1.05, and more preferably 0.98 to 1.02.
- the water ratio change rate is 0.90 to 1.10, preferably 0.95 to 1.05, and more preferably 0.98 to 1.02.
- SiO 2 (silica) reduced mass of the silane alkoxide is added per minute, relative to the weight of the silica seed particles in the liquid I It is preferably added so as to be 10% by mass or more, more preferably 15% by mass or more, further preferably 20% by mass or more, and particularly preferably 20 to 35% by mass.
- the molar ratio of the alkali catalyst to the silica component is always 0.20 or more, and the molar ratio of water to the silica component is always 2.0 or more. That is, during the reaction, it is preferable to maintain the alkali catalyst and water in a predetermined amount or more with respect to the silica component. In this way, by maintaining the alkali catalyst and water at a predetermined amount or more and causing the reaction to proceed, hydrolysis can sufficiently proceed and generation of unreacted substances can be suppressed.
- the silica component in a reaction system is synonymous with the case of a catalyst rate change rate etc.
- the molar ratio of the alkali catalyst to the silica component is more preferably 0.30 or more, and further preferably 0.50 to 1.00.
- the molar ratio of water to the silica component is more preferably 3.0 or more, and further preferably 3.5 to 15.0.
- the pH of the reaction system at the end of the addition is preferably 11 or more, and more preferably 11.2 or more.
- the pH at the end of the reaction can be increased to 11 or more by adding the alkali catalyst amount and water amount to the silica component constant.
- reaction temperature may be any temperature below the boiling point of the solvent used. However, the reaction temperature is preferably 0 to 65 ° C. and more preferably 10 to 50 ° C. in order to accelerate the precipitation of particles.
- the silica concentration in the silica particle dispersion (reaction system) at the end of the addition is higher than that produced by a conventional method, for example, 5% by mass or more, preferably 10% by mass or more, preferably 10 to 10%. 25 mass% is more preferable.
- ⁇ Method for measuring the concentration of silica particles in the system >> The silica particle concentration is obtained by drying 5 g of a sample at 1000 ° C. for 1 hour and calculating from the mass before and after drying by the following formula.
- Silica particle concentration (mass%) (mass after drying / mass before drying) ⁇ 100
- the silica particle concentration is set to a value obtained by the above method.
- the silica particle dispersion produced by the method of the present invention is useful for abrasives, and may be used in the form of a dispersion as it is or may be used after drying.
- the unreacted content of the silica particle dispersion is preferably 200 ppm or less, more preferably 150 ppm or less, and even more preferably 100 ppm or less.
- the unreacted material means a silicon-containing compound other than the target silica particles.
- it means a silicon-containing compound in the supernatant when the silica particle aqueous dispersion is centrifuged by the method exemplified in the above liquid I.
- the silica (SiO 2 ) concentration is determined from Si obtained by measuring the silicon-containing compound (unreacted material) in the supernatant by the method exemplified in the liquid I.
- the silica particle dispersion contains almost no unreacted material, when used in an abrasive, the silica particle dispersion is excellent in particle stability in the abrasive and can suppress deposits on the substrate. Moreover, adsorption of various chemicals added to the abrasive and reaction with various chemicals can be suppressed, and the effects of various chemicals can be exhibited more effectively.
- Silica particles contained in the silica particle dispersion have a three-dimensional polycondensation structure. This is because the hydrolysis and polycondensation of the silane alkoxide are performed on the alkaline side, so that the silane alkoxide proceeds not only in a planar shape (two-dimensional) but also in a three-dimensional manner (three-dimensional). An abrasive using particles having such a structure is suitable because it has high particle dispersibility and provides a sufficient polishing rate. On the other hand, when hydrolysis and polycondensation are carried out on the acidic side, it proceeds two-dimensionally and spherical particles cannot be obtained. The structure can be determined by confirming with a transmission electron microscope or a scanning electron microscope and existing as particles.
- the average particle diameter of the primary particles contained in the silica particle dispersion is preferably 5 to 300 nm, and can be appropriately set depending on the required polishing rate, polishing accuracy, and the like.
- the average particle size is less than 5 nm, the stability of the silica particle dispersion tends to be insufficient, and the particle size is too small to obtain a sufficient polishing rate.
- the average particle size exceeds 300 nm, when used as an abrasive, although depending on the type of substrate or insulating film, scratches are likely to occur and sufficient smoothness may not be obtained.
- a more preferable average particle diameter is 10 to 200 nm, and further preferably 15 to 100 nm.
- FIG. 1 illustrates particles in which primary particles exist alone or particles in which a plurality of primary particles are connected.
- the blackened portion is an image of a joint portion between particles, and the joint portion may include a space.
- the particle diameter d is obtained by measuring the longest diameter of the primary particles of each particle.
- the average particle diameter (d) is obtained as an average value obtained by taking an electron micrograph and measuring the longest diameter d of the primary particles of each of 100 arbitrary particles.
- the silica particle dispersion preferably contains 10% or more of deformed silica particles in which two or more primary particles are connected, more preferably 30% or more, and even more preferably 50% or more.
- the irregular-shaped silica particle in which two or more primary particles are connected refers to a chain-like particle in which two or more, preferably 2 to 10 particles (primary particles) grasped as one spherical or true spherical particle are connected. (See FIG. 1). From the standpoint of abrasiveness, 2 to 3 connected irregularly shaped silica particles are preferred.
- the number of connected primary particles of irregular-shaped silica particles and the proportion of irregular-shaped silica particles in the system are obtained by taking an electron micrograph and observing any 100 particles.
- Silica particles contained in the silica particle dispersion have U and Th contents of less than 0.3 ppb, alkali metals, alkaline earth metals, Fe, Ti, Zn, Pd, Ag, Mn, Co, Mo, Sn
- the content of each of Al, Zr and Zr is preferably less than 0.1 ppm
- the content of each of Cu, Ni and Cr is preferably less than 1 ppb.
- the wiring node can be used as a highly integrated logic or memory having a wiring node of 40 nm or less and a polishing abrasive for preparation for three-dimensional mounting. If the content of these impure metal elements exceeds the above range, the metal elements may remain on the substrate polished with silica-based particles.
- This metal element causes insulation failure of a circuit formed on the semiconductor substrate or short-circuits the circuit.
- the dielectric constant of the film provided for insulation (insulating film) decreases, the impedance of the metal wiring increases, the response speed may be delayed, the power consumption may increase, and the like.
- the metal element ions move (diffuse) and the use conditions and use are extended for a long time.
- the alkali metal represents Li, Na, K, Rb, Cs, and Fr
- the alkaline earth metal represents Be, Mg, Ca, Sr, Ba, and Ra.
- the material of the apparatus for preparing the particles does not contain these elements and has high chemical resistance.
- Teflon (registered trademark), FRP, carbon fiber and other plastics, alkali-free glass, and the like are preferable.
- the alcohol used during the hydrolysis of the alkoxide may leave a metal impurity from a tank or the like and a catalyst during synthesis, and may require particularly high-precision purification.
- a method for obtaining high-purity silica particles there are a method in which raw materials with a small amount of impurities are prepared in advance, or mixing from a device for particle preparation is suppressed. Besides this, it is possible to reduce the impurities from the prepared particles without taking such measures sufficiently.
- impurities are incorporated in the silica particles, purification by ion exchange or filter removal is inefficient and may be expensive. For this reason, it is not realistic to obtain silica particles having a small impurity content by such a method.
- the silica particles are dissolved with hydrofluoric acid, heated to remove hydrofluoric acid, pure water is added as necessary, and the resulting solution is subjected to an ICP inductively coupled plasma emission spectroscopic mass spectrometer (for example, , ICPM-8500 manufactured by Shimadzu Corporation).
- Example 1 ⁇ Manufacture of silica particle dispersion (A)> 180.0 g of a liquid I containing silica seed particles having an average particle diameter of 15 nm is maintained at 50 ° C., and 1956.4 g of a methanol solution (liquid A) of tetramethoxysilane (manufactured by Tama Chemical Co., Ltd.) Aqueous ammonia (Liquid B) 546.0 g was added simultaneously over 100 minutes.
- the compositions of Liquid I, Liquid A, and Liquid B are shown in Table 1 (the same applies to the following Examples and Comparative Examples).
- silica concentration of the silica particle dispersion at the end of addition was 15.1% by mass. After completion of the addition, the mixture was further aged at this temperature for 30 minutes. The solvent was replaced with pure water to obtain a 20% by mass silica particle dispersion (A). Detailed production conditions and various measurement results are shown in Table 2 (the same applies to the following Examples and Comparative Examples).
- silica seed particle concentration in liquid I was obtained by drying 5 g of a sample at 1000 ° C. for 1 hour and calculating from the mass before and after drying according to the following formula.
- Silica seed particle concentration (% by mass) (mass after drying / mass before drying) ⁇ 100
- the amount of unreacted material is the supernatant when the liquid I is centrifuged for 30 minutes at a set temperature of 10 ° C. and 1,370,000 rpm (1,000,000 G) using a small ultracentrifuge CS150GXL manufactured by Hitachi Koki Co., Ltd.
- the silicon-containing compounds (unreacted substances) present therein were compared by determining the SiO 2 concentration from Si measured with an ICP emission analyzer ICPS-8100 manufactured by Shimadzu Corporation.
- ⁇ Catalyst rate change rate and water rate change rate> The molar ratios of alkali catalyst / silane alkoxide and water / silane alkoxide are determined based on the amount of silica seed particles and the amount of silane alkoxide added based on the measured amount of silica component (silicon (Si)).
- Silane alkoxide addition rate The amount of the silane alkoxide added to the system per unit time (1 minute) was calculated as a mass ratio with respect to the silica seed particles in the liquid I. Incidentally, both of the mass is obtained by conversion as the silica (SiO 2).
- the amount of the unreacted material was determined by using the obtained 20 mass% silica particle dispersion at a set temperature of 10 ° C. and 1,370,000 rpm (1,000,000 G) using a small ultracentrifuge CS150GXL manufactured by Hitachi Koki Co., Ltd.
- the silicon-containing compounds (unreacted substances) present in the supernatant after centrifugation for 30 minutes were compared by obtaining SiO 2 concentration from Si measured by ICPS emission analyzer ICPS-8100 manufactured by Shimadzu Corporation.
- ⁇ Measurement of average particle diameter of primary particles of silica particle dispersion The average particle diameter of the primary particles is obtained by taking an electron micrograph of silica particles, and for any 100 particles, as illustrated in FIG. 1, the longest primary particle diameter (even in the case of the short axis direction of chain particles). Yes) and measured as an average value.
- ⁇ CV value of primary particle size >> The CV value of the primary particle diameter was obtained by calculation using the above individual results.
- abrasive (A) containing 3.0% by mass of the silica particles produced in Example 1, 175 ppm of hydroxyethyl cellulose (HEC), and 225 ppm of ammonia was produced.
- the performance evaluation results of the following abrasives are shown in Table 2 (the same applies to the following examples and comparative examples).
- ⁇ Abrasive (slurry) stability test The stability of the abrasive (slurry) was evaluated by the presence or absence of white turbidity of the abrasive (A) produced in ⁇ Manufacture of abrasive (A)>. No cloudiness: ⁇ There is cloudiness: ⁇
- polishing substrate single crystal silicon wafer with a crystal structure of 1.0. 0
- a polishing apparatus NF300 manufactured by Nano Factor Co., Ltd.
- polishing pad SUBA600 substrate load 15 kPa
- substrate load 15 kPa table rotation speed 50 rpm
- the polishing substrate (A) was polished at a spindle speed of 60 rpm at a rate of 250 ml / min for 10 minutes. Thereafter, it was washed with pure water and air-dried.
- the degree of remaining was confirmed using a laser microscope (VK-X250, manufactured by Keyence Corporation), and evaluated according to the following evaluation criteria. There is almost no residual. : ⁇ A slight residual is observed. : ⁇ Residue is widely recognized. : ⁇
- abrasive (B) was produced in the same manner as in Example 1 except that the silica particle dispersion (B) was used, and the performance was evaluated.
- Example 3 ⁇ Manufacture of silica particle dispersion (C)> 180.0 g of a liquid I containing silica seed particles having an average particle diameter of 15 nm is maintained at 50 ° C., and 1956.4 g of a methanol solution (liquid A) of tetramethoxysilane (manufactured by Tama Chemical Co., Ltd.) Aqueous ammonia (Liquid B) 546.0 g was added simultaneously over 200 minutes. In this example, liquid I having a low silica seed particle concentration was used. The silica concentration of the silica particle dispersion at the end of the addition was 14.9% by mass. After completion of the addition, the mixture was further aged at this temperature for 30 minutes. The solvent was replaced with pure water to obtain a 20% by mass silica particle dispersion (C).
- abrasive (C) was produced in the same manner as in Example 1 except that the silica particle dispersion (C) was used, and the performance was evaluated.
- the catalyst ratio (alkali catalyst / silica component) in the reaction system during the period from the start to the end of the addition varies from 0.86 to 1.00, and the water ratio (water / silica component) from 0.60 to 1.00. changed.
- the silica concentration of the silica particle dispersion at the end of the addition was 16.5% by mass. After completion of the addition, the mixture was further aged at this temperature for 30 minutes. The solvent was replaced with pure water to obtain a 20% by mass silica particle dispersion (D).
- abrasive (D) was produced in the same manner as in Example 1 except that the silica particle dispersion (D) was used, and the performance was evaluated.
- the catalyst ratio (alkali catalyst / silica component) in the reaction system during the period from the start to the end of the addition varies from 0.60 to 1.00, and the water ratio (water / silica component) from 0.60 to 1.00. changed.
- the silica concentration of the silica particle dispersion at the end of the addition was 16.3% by mass.
- the mixture was further aged at this temperature for 30 minutes.
- the solvent was replaced with pure water to obtain a 20% by mass silica particle dispersion (E).
- abrasive (E) was produced in the same manner as in Example 1 except that the silica particle dispersion (E) was used, and the performance was evaluated.
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Abstract
Description
例えば、半導体集積回路は、シリコンウエハー等の基材上に配線層間膜(絶縁膜)を成膜し、その配線層間膜(絶縁膜)上に金属配線用の溝パターンを形成し、必要に応じてスパッタリング法などによって窒化タンタル(TaN)等のバリアメタル層を形成し、ついで金属配線用の銅を化学蒸着(CVD)法等により成膜する。ここで、TaN等のバリアメタル層を設けた場合には層間絶縁膜への銅や不純物などの拡散や侵食に伴う層間絶縁膜の絶縁性の低下などを防止することができ、また層間絶縁膜と銅の接着性を高めることができる。
次いで、溝内以外に成膜された不要な銅及びバリアメタル(犠牲層ということがある)を化学機械研磨(CMP)法により研磨して除去するとともに上部表面を可能な限り平坦化して、溝内にのみ金属膜を残して銅の配線・回路パターンを形成する。
例えば、上記特許文献4記載の方法によれば、二次粒子の平均粒子径が一次粒子の平均粒子径の1.5~3.0倍の異形状のシリカ粒子が得られるとされている。
(1)添加開始(反応開始)から終了までの期間の反応系におけるシリカ成分に対するアルカリ触媒のモル比の初期値に対する変化率が、0.90~1.10である。
(2)添加開始(反応開始)から終了までの期間の反応系におけるシリカ成分に対する水のモル比の初期値に対する変化率が、0.90~1.10である。
反応系内におけるシリカ成分に対する触媒割合(アルカリ触媒/シリカ成分)、及びシリカ成分に対する水割合(水/シリカ成分)は、シリカ種粒子の質量及びシランアルコキシドの添加量の実測値に基づくシリカ成分(珪素(Si))としてのモル量を基準にして求める。この時、シランアルコキシドの加水分解及び重縮合の反応は瞬時に起こるもの(下記式参照)、アルカリ触媒は系外への放出はないものと仮定して算出する。これらの割合の変化率は、所定時間毎(例えば10分毎)に、添加量実測値から反応系内のモル比を算出し、初期値で除した数値により算出する。なお、初期値とは、液Iのシリカ種粒子の珪素(Si)を基準としたアルカリ触媒や水とのモル比の値をいう。
(加水分解時に水4モルを消費)
Si(OH)4 → SiO2 + 2H2O
(重縮合時に水2モルを放出)
本発明のシリカ粒子分散液の製造方法は、平均粒子径が3~100nmのシリカ種粒子を含有する液Iを準備する工程と、この液Iに、シランアルコキシドを含有する液Aと、アルカリ触媒及び水を含有する液Bとを同時に添加することにより、シリカ種粒子を成長させてシリカ粒子を製造する工程とを含む。この方法において、添加開始から終了までの期間の反応系におけるシリカ成分に対するアルカリ触媒のモル比の初期値に対する変化率(触媒割合変化率)を0.90~1.10とし、添加開始から終了までの期間の反応系におけるシリカ成分に対する水のモル比の初期値に対する変化率(水割合変化率)を0.90~1.10とすることを特徴とする。
ここで、本発明の製造方法における添加開始時とは、液Iに対して液A及び液Bの添加を開始した時を意味する。また、添加終了時とは、これら液A及び液Bの添加を終了した時を意味する。
液Iは、少なくともシリカ種粒子と有機溶媒を含み、好ましくは水及びアルカリ触媒を含む。この液Iは、水及びアルカリ触媒の量や割合が調整されているものが好ましい。すなわち、添加する液A及び液B(添加液)のアルカリ触媒/シランアルコキシド、水/シランアルコキシドのモル比を考慮して、液Iのアルカリ触媒/シリカ種粒子、水/シリカ種粒子のモル比を調整しておくことが好ましい。これにより、添加開始から終了までの反応期間中、反応系におけるシリカ成分に対するアルカリ触媒及び水の量を一定にできる。
《平均粒子径の測定方法》
平均粒子径は、電子顕微鏡写真を撮影し、任意の100個の粒子について、粒子の最長径を測定し、その平均値として得たものである。
未反応物とは、目的とするシリカ粒子(種粒子)まで反応が進んでいない含珪素化合物を意味する。例えば、未反応の原料シランアルコキシドやその低分子加水分解物(オリゴマー)、目的とする粒子よりはるかに小さい粒子等である。具体的には、日立工機株式会社製 小型超遠心機CS150GXLを用いて、シリカ粒子水分散液を設定温度10℃、1,370,000rpm(1,000,000G)で30分遠心処理した際の上澄み中の含珪素化合物を意味する。
この上澄み中の含珪素化合物(未反応物)を、株式会社島津製作所製 ICP発光分析装置ICPS-8100で測定したSiからSiO2濃度を求める。
電子顕微鏡写真を撮影し、任意の100個の粒子について、それぞれその最大径(DL)と、これと直交する短径(DS)との比(DS/DL)の平均値を求め、これを真球度とする。
下記の式により求める。なお、粒子径変動係数(CV値)を求める際の個々の粒子径及び平均粒子径は、上記「平均粒子径の測定方法」の項に記載の方法で算出する。
《液I中のシリカ種粒子濃度の測定方法》
シリカ種粒子濃度は、サンプル5gを1000℃で1時間乾燥させ、乾燥前後の質量から下記式により求める。
シリカ種粒子濃度(質量%)=(乾燥後の質量/乾燥前の質量)×100
なお、この測定方法によれば、シリカ種粒子以外の未反応物等も含まれるが、本発明の方法では未反応物等はごく微量であり影響がほとんどない。このためシリカ種粒子濃度は、上記方法により求められた値とする。
液Aは、シランアルコキシドを含有するものであり、好ましくは、さらに有機溶媒を含有する。通常は、実質的にシランアルコキシドからなるか、実質的にシランアルコキシド及び有機溶媒の2成分からなる。なお、「実質的にシランアルコキシドからなる」、「実質的に2成分からなる」とは、シランアルコキシドや有機溶媒の製造過程から不可避的に含まれる不純物等は含まれ得るが、それ以外は含まないことを意味し、例えば、99質量%以上であり、好ましくは99.5質量%以上である。
液Bは、アルカリ触媒及び水を含有するものであり、通常、実質的に2成分からなる。なお、「実質的に2成分からなる」とは、上記液Aで説明したのと同様の意味である。
本発明のシリカ粒子分散液の製造方法は、次の2つの条件を満足する。
(1)触媒割合変化率が、0.90~1.10である。
(2)水割合変化率が、0.90~1.10である。
《系中のシリカ粒子濃度の測定方法》
シリカ粒子濃度は、サンプル5gを1000℃で1時間乾燥させ、乾燥前後の質量から下記式により求める。
シリカ粒子濃度(質量%)=(乾燥後の質量/乾燥前の質量)×100
なお、この測定方法によれば、シリカ粒子以外の未反応物等も含まれるが、本発明の方法では未反応物等はごく微量であり影響がほとんどない。このためシリカ粒子濃度は、上記方法により求められた値とする。
本発明の方法により製造されるシリカ粒子分散液は、研磨材に有用であり、このまま分散体の状態で用いてもよいし、乾燥して用いてもよい。このシリカ粒子分散液の未反応物の含有量は、200ppm以下が好ましく、150ppm以下がより好ましく、100ppm以下がさらに好ましい。
未反応物とは、目的とするシリカ粒子以外の含珪素化合物を意味する。例えば、未反応の原料シランアルコキシドやその低分子加水分解物(オリゴマー)、目的とする粒子よりはるかに小さい粒子等である。具体的には、シリカ粒子水分散液を上記液Iで例示した方法で遠心処理した際の上澄み中の含珪素化合物を意味する。
この上澄み中の含珪素化合物(未反応物)を上記液Iで例示した方法で測定したSiからシリカ(SiO2)濃度を求める。
その構造は、透過電子顕微鏡や走査型電子顕微鏡で確認して、粒子として存在することで判断できる。
ここで、平均粒子径が5nm未満の場合は、シリカ粒子分散液の安定性が不充分となる傾向にあり、また粒子径が小さすぎて充分な研磨速度が得られないことがある。平均粒子径が300nmを超える場合は、研磨材として使用した場合、基板または絶縁膜の種類にもよるが、スクラッチが発生しやすく、充分な平滑性が得られないことがある。より好ましい平均粒子径は10~200nm、さらに好ましくは15~100nmである。
《平均粒子径の測定方法》
平均粒子径(d)の算出方法について、図1を用いて説明する。図1は、一次粒子が単独で存在する粒子や複数の一次粒子が連結した粒子を例示している。黒塗り部は粒子間の接合部のイメージであり、接合部は空間を含んでいてもよい。粒子径dは、各粒子の一次粒子の最長径を測定したものである。平均粒子径(d)は、電子顕微鏡写真を撮影し、任意の100個の粒子について、各粒子の一次粒子の最長径dを測定し、その平均値として得る。
これら不純分の金属元素の含有量が上述の範囲を超えて多く存在すると、シリカ系粒子を用いて研磨した基板に金属元素が残存するおそれがある。この金属元素が半導体基板に形成された回路の絶縁不良を起こしたり回路を短絡させたりする。これによって、絶縁用に設けた膜(絶縁膜)の誘電率が低下し、金属配線にインピーダンスが増大し、応答速度の遅れ、消費電力の増大等が起きることがある。また、金属元素イオンが移動(拡散)し、使用条件や使用が長期にわたった場合にもこのような不具合を生じることがある。特に、U、Thの場合は、放射線を発生するため、微量でも残存した場合に放射線による半導体の誤作動を引き起こす点で好ましくない。
ここで、アルカリ金属とは、Li、Na、K、Rb、Cs、Frを表し、アルカリ土類金属とは、Be、Mg、Ca、Sr、Ba、Raを表す。
また、使用する原料については、蒸留・イオン交換・フィルター除去で精製することが好ましい。特にアルコキシドの加水分解時に使用するアルコールは、タンク等からの金属不純分や合成時の触媒が残存するおそれがあり、特に精度の高い精製を必要とする場合がある。
シリカ粒子中のU、Thの含有量、アルカリ金属、アルカリ土類金属、Fe、Ti、Zn、Pd、Ag、Mn、Co、Mo、Sn、Al、Zrの含有量、およびCu、Ni、Crの含有量については、シリカ粒子をフッ酸で溶解し、加熱してフッ酸を除去した後、必要に応じて純水を加え、得られた溶液についてICP誘導結合プラズマ発光分光質量分析装置(例えば、株式会社島津製作所製 ICPM-8500)を用いて測定する。
〈シリカ粒子分散液(A)の製造〉
平均粒子径15nmのシリカ種粒子を含む液I180.0gを50℃に保持し、この液Iに対して、テトラメトキシシラン(多摩化学(株)製)のメタノール溶液(液A)1956.4gと、アンモニア水(液B)546.0gとを同時に100分かけて添加した。液I、液A及び液Bの組成を表1に示す(以下の実施例、比較例も同様)。
添加終了(反応終了)時のシリカ粒子分散液のシリカ濃度は、15.1質量%であった。添加終了後、さらにこの温度で30分間熟成した。溶媒を純水に置換し、20質量%シリカ粒子分散液(A)を得た。詳細な製造条件、及び各種測定結果を表2に示す(以下の実施例、比較例も同様)。
種粒子の平均粒子径は、種粒子の電子顕微鏡写真を撮影し、任意の100個の粒子について、図1に例示するように種粒子の最も長い径を測定し、その平均値として得た。
《種粒子のCV値の測定》
種粒子のCV値は、上記の個々の結果を用い、計算により求めた。
電子顕微鏡写真を撮影し、任意の100個の粒子について、それぞれその最大径(DL)と、これと直交する短径(DS)との比(DS/DL)の平均値を求め、これを真球度とした。
シリカ種粒子濃度は、サンプル5gを1000℃で1時間乾燥させ、乾燥前後の質量から下記式により求めた。
シリカ種粒子濃度(質量%)=(乾燥後の質量/乾燥前の質量)×100
未反応物量は、液Iを、日立工機株式会社製 小型超遠心機CS150GXLを用いて、設定温度10℃、1,370,000rpm(1,000,000G)で30分間遠心処理した際の上澄み中に存在する含珪素化合物(未反応物)を、株式会社島津製作所製ICP発光分析装置ICPS-8100で測定したSiからSiO2濃度を求め、比較した。
アルカリ触媒/シランアルコキシド、水/シランアルコキシドの各モル比は、シリカ種粒子の質量及びシランアルコキシドの添加質量実測値に基づくシリカ成分(珪素(Si)としてのモル量を基準に、シランアルコキシドの加水分解及び重縮合の反応は瞬時に起こるもの(下記式参照)、アルカリ触媒は系外への放出はないものと仮定して算出した。液A及び液Bの添加開始10分後から、10分毎の反応系内のモル比を算出した。液Iにおけるモル比を初期値として、かかる初期値で除した数値で、系内の各物質モル比の変化を比較した。
(加水分解時に水4モルを消費)
Si(OH)4 → SiO2 + 2H2O
(重縮合時に水2モルを放出)
単位時間(1分間)あたりに系中に添加されるシランアルコキシドの量を、液I中のシリカ種粒子に対する質量比として算出した。なお、両者の質量は、シリカ(SiO2)として換算したものである。
10分毎にサンプルを採取し、サンプル5gを1000℃で1時間乾燥させ、乾燥前後の質量から、系中シリカ成分濃度を算出した(下記式)。
系中シリカ成分濃度(質量%)=(乾燥後の質量/乾燥前の質量)×100
未反応物量は、得られた20質量%シリカ粒子分散液を、日立工機株式会社製 小型超遠心機CS150GXLを用いて、設定温度10℃、1,370,000rpm(1,000,000G)で30分間遠心処理した際の上澄み中に存在する含珪素化合物(未反応物)を、株式会社島津製作所製 ICP発光分析装置ICPS-8100で測定したSiからSiO2濃度を求め、比較した。
一次粒子の平均粒子径は、シリカ粒子の電子顕微鏡写真を撮影し、任意の100個の粒子について、図1に例示するように一次粒子の最も長い径(鎖状粒子の短径方向の場合もあり)を測定し、その平均値として得た。
《一次粒子径のCV値》
一次粒子径のCV値は、上記の個々の結果を用い、計算により求めた。
電子顕微鏡写真を撮影し、任意の100個の粒子について観察し、一次粒子が2個以上連結した異形シリカ粒子の割合を求めた。
電子顕微鏡写真を撮影し、任意の100個の粒子について観察し、各粒子の連結個数の平均値を求めた。
実施例1で製造したシリカ粒子を3.0質量%、ヒドロキシエチルセルロース(HEC)を175ppm、アンモニアを225ppm含有する研磨材(A)を製造した。下記の研磨材の性能評価結果を表2に示す(以下の実施例、比較例も同様)。
研磨材(スラリー)の安定性は、〈研磨材(A)の製造〉で製造された研磨材(A)の白濁の有無で評価した。
白濁なし :○
白濁あり :×
研磨用基板(結晶構造が1.0.0である単結晶シリコンウエハー)を用い、研磨装置(ナノファクター(株)製 NF300)にセットし、研磨パッドSUBA600、基板加重15kPa、テーブル回転速度50rpm、スピンドル速度60rpmで、上記研磨材(A)を250ml/分の速度で研磨用基板の研磨を10分間行った。その後、純水にて洗浄し風乾した。
スクラッチはほとんど認められない。 :○
スクラッチが僅かに認められる。 :△
スクラッチが広範囲に認められる。 :×
残存はほとんど認められない。 :○
残存が僅かに認められる。 :△
残存が広範囲に認められる。 :×
〈シリカ粒子分散液(B)の製造〉
平均粒子径25nmのシリカ種粒子を含む液I185.95gを50℃に保持し、この液Iに対して、テトラメトキシシラン(多摩化学(株)製)のメタノール溶液(液A)1956.4gと、アンモニア水(液B)709.0gとを同時に80分かけて添加した。
添加終了時のシリカ粒子分散液のシリカ濃度は、14.2質量%であった。添加終了後、さらにこの温度で1時間熟成した。溶媒を純水に置換し、20質量%シリカ粒子分散液(B)を得た。
シリカ粒子分散液(B)を用いた以外は実施例1と同様に研磨材(B)を製造して性能を評価した。
〈シリカ粒子分散液(C)の製造〉
平均粒子径15nmのシリカ種粒子を含む液I180.0gを50℃に保持し、この液Iに対して、テトラメトキシシラン(多摩化学(株)製)のメタノール溶液(液A)1956.4gと、アンモニア水(液B)546.0gとを同時に200分かけて添加した。本実施例では、シリカ種粒子濃度の低い液Iを用いた。
添加終了時のシリカ粒子分散液のシリカ濃度は、14.9質量%であった。添加終了後、さらにこの温度で30分間熟成した。溶媒を純水に置換し、20質量%シリカ粒子分散液(C)を得た。
シリカ粒子分散液(C)を用いた以外は実施例1と同様に研磨材(C)を製造して性能を評価した。
〈シリカ粒子分散液(D)の製造〉
平均粒子径15nmのシリカ種粒子を含む液I180.0gを50℃に保持し、この液Iに対して、テトラメトキシシラン(多摩化学(株)製)のメタノール溶液(液A)3051.97gと、アンモニア水(液B)546.0gとを同時に100分かけて添加した。本比較例は、実施例1に対して液Aの組成を変更した。
添加開始から終了までの期間の反応系中の触媒割合(アルカリ触媒/シリカ成分)は0.86~1.00で変化し、水割合(水/シリカ成分)は0.60~1.00で変化した。
添加終了時のシリカ粒子分散液のシリカ濃度は、16.5質量%であった。添加終了後、さらにこの温度で30分間熟成した。溶媒を純水に置換し、20質量%シリカ粒子分散液(D)を得た。
シリカ粒子分散液(D)を用いた以外は実施例1と同様に研磨材(D)を製造して性能を評価した。
〈シリカ粒子分散液(E)の製造〉
平均粒子径15nmのシリカ種粒子を含む液I180.0gを50℃に保持し、この液Iに対して、テトラメトキシシラン(多摩化学(株)製)のメタノール溶液(液A)1956.4gと、アンモニア水(液B)344.0gとを同時に100分かけて添加した。本比較例は、実施例1に対して液Bの組成を変更した。
添加開始から終了までの期間の反応系中の触媒割合(アルカリ触媒/シリカ成分)は0.60~1.00で変化し、水割合(水/シリカ成分)は0.60~1.00で変化した。
添加終了時のシリカ粒子分散液のシリカ濃度は、16.3質量%であった。添加終了後、さらにこの温度で30分間熟成した。溶媒を純水に置換し、20質量%シリカ粒子分散液(E)を得た。
シリカ粒子分散液(E)を用いた以外は実施例1と同様に研磨材(E)を製造して性能を評価した。
Claims (10)
- 平均粒子径が3~100nmのシリカ種粒子を含有する液Iを容器に準備する工程と、
前記液Iに、シランアルコキシドを含有する液Aと、アルカリ触媒及び水を含有する液Bとを同時に添加し、前記シリカ種粒子を成長させてシリカ粒子を製造する工程とを含み、
添加開始から終了までの期間の反応系におけるシリカ成分に対する前記アルカリ触媒のモル比の初期値に対する変化率が、0.90~1.10であり、
添加開始から終了までの期間の前記反応系におけるシリカ成分に対する前記水のモル比の初期値に対する変化率が、0.90~1.10である
ことを特徴とするシリカ粒子分散液の製造方法。 - 前記液I中のシリカ種粒子濃度が、1質量%以上であることを特徴とする請求項1記載のシリカ粒子分散液の製造方法。
- 前記シランアルコキシドの添加量が、前記液I中の前記シリカ種粒子に対して、SiO2換算質量として、1分間あたり10質量%以上であることを特徴とする請求項1又は2記載のシリカ粒子分散液の製造方法。
- 前記シリカ種粒子の真球度が0.80~1.00、かつ粒子径変動係数(CV値)が10%以下であることを特徴とする請求項1~3のいずれか記載のシリカ粒子分散液の製造方法。
- 前記液I中の未反応物の含有量が、200ppm以下であることを特徴とする請求項1~4のいずれか記載のシリカ粒子分散液の製造方法。
- 製造されるシリカ粒子が、一次粒子が2個以上連結した異形シリカ粒子であることを特徴とする請求項1~5のいずれか記載のシリカ粒子分散液の製造方法。
- 添加終了時の前記反応系中のシリカ粒子濃度が、5質量%以上であることを特徴とする請求項1~6のいずれか記載のシリカ粒子分散液の製造方法。
- 添加終了時の前記反応系中の未反応物の含有量が、200ppm以下であることを特徴とする請求項1~7のいずれか記載のシリカ粒子分散液の製造方法。
- 添加開始から終了までの期間、前記反応系におけるシリカ成分に対する前記アルカリ触媒のモル比が常時0.20以上であり、かつ、前記シリカ成分に対する前記水のモル比が常時2.0以上であることを特徴とする請求項1~8のいずれか記載のシリカ粒子分散液の製造方法。
- 前記反応系の温度が、0~65℃であることを特徴とする請求項1~9のいずれか記載のシリカ粒子分散液の製造方法。
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