WO2018171079A1 - 主动开关阵列基板及其制造方法与显示面板 - Google Patents

主动开关阵列基板及其制造方法与显示面板 Download PDF

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Publication number
WO2018171079A1
WO2018171079A1 PCT/CN2017/091472 CN2017091472W WO2018171079A1 WO 2018171079 A1 WO2018171079 A1 WO 2018171079A1 CN 2017091472 W CN2017091472 W CN 2017091472W WO 2018171079 A1 WO2018171079 A1 WO 2018171079A1
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Prior art keywords
layer
substrate
switch array
active switch
array substrate
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PCT/CN2017/091472
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English (en)
French (fr)
Inventor
陈猷仁
Original Assignee
惠科股份有限公司
重庆惠科金渝光电科技有限公司
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Priority to US15/555,422 priority Critical patent/US20190049804A1/en
Publication of WO2018171079A1 publication Critical patent/WO2018171079A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13396—Spacers having different sizes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements

Definitions

  • the present application relates to a manufacturing method, and in particular to an active switch array substrate, a manufacturing method thereof and a display panel.
  • the active switch array substrate is divided into a red-green blue resist layer in the opposite substrate (RGB on CF), and a flat-conversion type liquid crystal panel has a red-green blue resist layer on the active switch array substrate (RGB on Array/In -Plane Switching, IPS Mode), and RGB on Array/Vertical Alignment (VA Mode) in a vertical alignment type liquid crystal panel.
  • RGB on Array/In -Plane Switching, IPS Mode RGB on Array/Vertical Alignment
  • VA Mode RGB on Array/Vertical Alignment
  • an object of the present invention is to provide an active switch array substrate, a method of manufacturing the same, and a display panel, which can reduce display screen unevenness, reduce misalignment accuracy of upper and lower substrates, and reduce vacuum foaming.
  • An active switch array substrate includes: a first substrate having an outer surface; a plurality of gate lines formed on the first substrate; and a gate cap layer formed on the first a substrate and covering the gate lines; a plurality of data lines formed on the gate cap layer; a first protective layer formed on the gate cap layer and covering the data lines; a pixel electrode layer formed on the first protective layer; a plurality of photo spacers formed on the first protective layer; and an opaque matrix layer having the same material as the materials of the photo spacers Formed on the first protective layer; and a color filter layer formed on an outer surface of the first substrate and including a plurality of photoresist layers arranged in parallel.
  • the color filter layer material is a red, green, and blue glue material; and the color filter layer material may also include a white or yellow glue material.
  • the photo spacer has a convex shape with a narrow upper and a lower width.
  • the method further includes: a plurality of artificial photo spacers formed on the pixel electrode layer and an opaque matrix layer formed on the pixel electrode layer.
  • the material of the opaque matrix layer is the same as the material of the astigmatism spacer.
  • a further object of the present application is to provide a method for manufacturing an active switch array substrate, comprising: providing a first substrate; forming a plurality of gate lines on the first substrate; forming a gate cap layer on the first a substrate and covering the gate lines; forming a plurality of data lines on the gate cap layer; forming a first protective layer on the gate cap layer and covering the data lines; Forming a pixel electrode layer on the first protective layer; simultaneously forming a plurality of photo spacers and an opaque matrix layer on the first protective layer, and the opaque matrix layer has the same material And a plurality of parallel arranged photoresist layers are sequentially formed on the outer surface of the first substrate to complete a color filter layer.
  • the manufacturing method the step of forming a plurality of photoresist layers arranged in parallel includes: spraying the red-green-blue glue by an inkjet process; curing by ultraviolet light The red-green-blue glue; forming the photoresist layer on an outer surface of the first substrate.
  • the manufacturing method, the plurality of photo spacers and an opaque matrix layer are simultaneously formed on the first protective layer, and the opaque matrix layer is made of a material
  • the step of the same material as the photo spacers includes: forming a light shielding material layer on the first protective layer to cover the first protective layer; and providing a photomask on the light shielding material layer,
  • the photomask has a light transmissive region, a non-transparent region and a semi-transmissive region; and an exposure manufacturing and a development manufacturing to pattern the light shielding material layer to form the photo spacers and the impervious Light matrix layer.
  • the photo spacers form at least two step differences through the same photomask.
  • the reticle is a halftone reticle.
  • an active switch array substrate comprising: a first substrate having an outer surface, wherein the outer surface has a red, green and blue glue material; and a plurality of gates a gate line formed on the first substrate; a gate cap layer formed on the first substrate and covering the gate lines; a plurality of data lines formed on the gate cap layer; a first protective layer is formed on the gate cap layer and covers the data lines; a pixel electrode layer is formed on the first protective layer; and a plurality of photo spacers are formed on the first layer a protective layer; an opaque matrix layer having a material identical to the material of the photo spacers formed on the first protective layer; and a color filter layer formed on an outer surface of the first substrate And comprising a plurality of photoresist layers arranged in parallel; the pair of substrates comprises: a second substrate; the active switch array substrate is disposed opposite to the opposite substrate, wherein the photo spacers are located in the pair To the substrate and Between the active switch
  • Still another object of the present application is a liquid crystal display device comprising a backlight module, and further comprising the liquid crystal display panel.
  • the application can reduce the unevenness of the display screen, reduce the error of the alignment accuracy of the upper and lower substrates, and reduce the vacuum foaming.
  • FIG. 1a is a schematic cross-sectional view of an exemplary red-green blue resist layer and an opaque matrix layer in a counter substrate.
  • FIG. 1b is a schematic cross-sectional view of an exemplary red-green blue resist layer in an active switch array substrate.
  • FIG. 1c is a schematic cross-sectional view of another exemplary red-green blue resist layer in an active switch array substrate.
  • FIG. 2a is a schematic cross-sectional view showing an active switch array substrate applied to a peripheral region of a liquid crystal display panel in accordance with the method of the present application.
  • 2b is a schematic cross-sectional view showing an active switch array substrate applied to a display region in a liquid crystal display panel in accordance with the method of the present application.
  • 2c is a schematic cross-sectional view showing an active switch array substrate applied to another peripheral region of a liquid crystal display panel in accordance with the method of the present application.
  • 2d is a schematic cross-sectional view showing an active switch array substrate applied to a liquid crystal display panel in accordance with the method of the present application.
  • Figure 3a is a schematic illustration of the glass surface of a color filter substrate in an exemplary liquid crystal display.
  • FIG. 3b is a schematic diagram showing an opaque matrix layer and a red-green-blue adhesive material on the back surface of the active switch array substrate applied to the liquid crystal display according to the method of the present application.
  • Fig. 3c is a schematic view showing the back surface of the active switch array substrate by attaching a red-green-blue adhesive material by an inkjet method and an ultraviolet irradiation method.
  • the word “comprising” is to be understood to include the component, but does not exclude any other component.
  • “on” means located above or below the target component, and does not mean that it must be on the top based on the direction of gravity.
  • the liquid crystal display panel of the present application may include a Thin Film Transistor (TFT) substrate, a Color Filter (CF) substrate, and a liquid crystal layer formed between the two substrates.
  • TFT Thin Film Transistor
  • CF Color Filter
  • the liquid crystal display panel of the present application may be a curved display panel.
  • the active switching array (TFT) and the color filter layer (CF) of the present application may be formed on the same substrate.
  • FIG. 1a is a schematic cross-sectional view of an exemplary red-green blue resist layer and an opaque matrix layer in a counter substrate.
  • a liquid crystal panel having a red-green blue resist layer and an opaque matrix layer on a counter substrate includes: a pair of substrates 20, including: a second substrate 200; a color filter layer 212, The second substrate 200 is disposed on the second substrate 200 and includes a plurality of photoresist layers (red photoresist, green photoresist, blue photoresist) arranged in parallel; an opaque matrix layer 210 disposed on the second substrate 200 a transparent electrode layer 214 disposed on the color filter layer 212; and a plurality of photo spacers 216, 218 disposed on the transparent electrode layer 214; an active switch array substrate 10, including: a substrate 100; the active switch array substrate 10 is disposed opposite to the opposite substrate 20, wherein the photo spacers 216, 218 are located between the opposite substrate 20 and the active switch array substrate 10, To define a liquid crystal space
  • FIG. 1b is a schematic cross-sectional view of an exemplary red-green blue resist layer in an active switch array substrate.
  • an active switch array substrate having a red-green blue resist layer in a planar conversion type liquid crystal panel includes: an active switch array substrate 11 including: a first substrate 100; and a plurality of gate lines 106 Formed on the first substrate 100; a gate The first capping layer 110 is formed on the first substrate 100 and covers the gate lines 106.
  • the plurality of data lines 108 are formed on the gate cap layer 110, wherein the data lines 108 and the plurality of data lines 108 are formed.
  • the gate line 106 defines a plurality of pixel regions; a first protective layer 112 is formed on the gate cap layer 110 and covers the data lines 108; a color filter layer 212 is formed on the first
  • the protective layer 112 includes a plurality of photoresist layers (red photoresist, green photoresist, blue photoresist) arranged in parallel; a second protective layer 113 is formed on the color filter layer 212 and covers the a first protective layer 112; a pixel electrode layer 114 formed on the second protective layer 113; a pair of substrates 21, comprising: a second substrate 200; an opaque matrix layer 210, disposed in the a second substrate 200; a transparent electrode layer 214 disposed on the second substrate 200 and covering the opaque matrix layer 210; and a plurality of photo spacers 217, 219 disposed on the transparent electrode layer
  • the active switch array substrate 11 is disposed opposite to the opposite substrate 21, wherein the light intervals are 217 and 219 are located between the opposite substrate 21 and the active switch
  • FIG. 1c is a schematic cross-sectional view of another exemplary red-green blue resist layer in an active switch array substrate.
  • a vertical switch-type liquid crystal panel having a red, green, and blue resist layer on the active switch array substrate includes: an active switch array substrate 12, including: a first substrate 100; and a plurality of gate lines 106.
  • a gate cap layer 110 is formed on the first substrate 100 and covers the gate lines 106; a plurality of data lines 108 are formed on the gate cover The layer 110, wherein the data lines 108 and the gate lines 106 define a plurality of pixel regions; a first protective layer 112, formed on the gate cap layer 110, and cover the data lines 108; a color filter layer 212 is formed on the first protective layer 112 and includes a plurality of photoresist layers (red photoresist, green photoresist, blue photoresist) arranged in parallel; and a second protective layer 113 is formed.
  • a pixel electrode layer 114 is formed on the second protective layer 113; a plurality of photo spacers 213, 215 are formed in the a second protective layer 113 and connected to the second protective layer 113; a pair of substrates 2 2, comprising: a second substrate 200; an opaque matrix layer 210 disposed on the second substrate 200; and a transparent electrode layer 214 disposed on the second substrate 200 and covering the
  • the light transmissive matrix layer 210 is disposed opposite to the opposite substrate 22 , wherein the photo spacers 213 , 215 are located between the opposite substrate 22 and the active switch array substrate 12 .
  • a liquid crystal space and a liquid crystal layer (not shown) between the opposite substrate 22 and the active switch array substrate 12, and filling the liquid crystal space.
  • FIG. 2a is a schematic cross-sectional view showing an active switch array substrate applied to a peripheral region of a liquid crystal display panel according to the method of the present application
  • FIG. 2b is an active switch array applied to a display region of the liquid crystal display panel according to the method of the present application.
  • 2c is a schematic cross-sectional view of a substrate
  • FIG. 2c is a schematic cross-sectional view showing an active switch array substrate applied to another peripheral region of a liquid crystal display panel according to the method of the present application
  • FIG. 2d is a view showing a method according to the present application applied to a liquid crystal display A schematic cross-sectional view of the active switch array substrate in the panel. Referring to FIG. 2a, FIG. 2b, FIG. 2c and FIG.
  • an active switch array substrate 13 includes: a first substrate 100 having an outer surface; and a plurality of gate lines 106 formed On the first substrate 100, a gate cap layer 110 is formed on the first substrate 100 and covers the gate lines 106. A plurality of data lines 108 are formed on the gate cap layer 110.
  • the data line 108 and the gate lines 106 define a plurality of pixel regions; a first protection layer 112 is formed on the gate cover layer 110 and covers the data lines 108; a pixel An electrode layer 114 is formed on the first protective layer 112; a plurality of photo spacers 232, 234 are formed on the first protective layer 112; an opaque matrix layer 115 is made of the same material as the light The material of the spacers 232, 234 is formed on the first protective layer 112; and a color filter layer 212 is formed on the outer surface of the first substrate 100 and includes a plurality of photoresist layers arranged in parallel ( For example, red photoresist, green photoresist, blue photoresist).
  • the color filter layer 212 material is, for example, a red, green, and blue glue.
  • the color filter layer 212 material can include, for example, a white and/or yellow gum.
  • the photo spacers 232, 234 have a convex shape with a narrow upper and a lower width.
  • the red, green and blue glue on the outer surface of the first substrate 100 is cured by ultraviolet light to form the color filter layer 212 and attached to the back surface of the active switch array substrate 13 .
  • a peripheral region of the active switch array substrate 13 includes a fiber material layer 220 between the active switch array substrate 13 and the opposite substrate 23.
  • the peripheral region of the active switch array substrate 13 further includes: a plurality of dummy spacers 236 formed on the pixel electrode layer 114 and an opaque matrix layer 115, the material of which is the same as The materials of the dummy spacers 236 are formed on the pixel electrode layer 114.
  • the peripheral region of the active switch array substrate 13 further includes a second protective layer 113 formed on the first protective layer 112.
  • a liquid crystal display panel includes: an active switch array substrate 13, comprising: a first substrate 100 having an outer surface; a plurality of gate lines 106 are formed on the first substrate 100; a gate cap layer 110 is formed on the first substrate 100 and covers the gate lines 106; and a plurality of data lines 108 are formed.
  • the data lines 108 and the gate lines 106 define a plurality of pixel regions; a first protective layer 112 is formed on the gate cap layer 110 and covered The data line 108; a pixel electrode layer 114 is formed on the first protective layer 112; a plurality of photo spacers 232, 234 are formed on the first protective layer 112; an opaque matrix layer 115 a material having the same material as the photo spacers 232, 234 formed on the first protective layer 112; and a color filter layer 212 formed on the outer surface of the first substrate 100 and including a plurality of a parallel arrangement of photoresist layers (eg, red photoresist, green photoresist, blue photoresist); a pair of substrates 2 3, comprising: a second substrate 200; the active switch array substrate 13 is disposed opposite to the opposite substrate 23, wherein the light intervals The object 232, 234 is located between the opposite substrate 23 and the active switch array substrate 13 to define a liquid crystal space; and a transparent electrode
  • the color filter layer 212 material is, for example, a red, green, and blue glue. In some embodiments, the color filter layer 212 material can include, for example, a white and/or yellow glue.
  • the photo spacers 232, 234 have a convex shape with a narrow upper and a lower width.
  • the red, green and blue glue on the outer surface of the first substrate 100 is cured by ultraviolet light to form the color filter layer 212 and attached to the back surface of the active switch array substrate 13 .
  • a peripheral region of the active switch array substrate 13 includes a fiber material layer 220 between the active switch array substrate 13 and the opposite substrate 23.
  • the peripheral region of the active switch array substrate 13 further includes: a plurality of dummy spacers 236 formed on the pixel electrode layer 114 and an opaque matrix layer 115, the material of which is the same as The materials of the dummy spacers 236 are formed on the pixel electrode layer 114.
  • the peripheral region of the active switch array substrate 13 further includes a second protective layer 113 formed on the first protective layer 112.
  • a liquid crystal display device includes a backlight module, and further includes: an active switch array substrate 13, comprising: a first substrate 100, An outer surface; a plurality of gate lines 106 are formed on the first substrate 100; a gate cap layer 110 is formed on the first substrate 100 and covers the gate lines 106; The data line 108 is formed on the gate cap layer 110, wherein the data lines 108 and the gate lines 106 define a plurality of pixel regions; a first protective layer 112 is formed on the gate cap layer The first data layer 108 is formed on the first protection layer 112;
  • the light transmissive matrix layer 115 is made of the same material as the materials of the photo spacers 232 and 234, and is formed on the first protective layer 112.
  • the color filter layer 212 is formed outside the first substrate 100.
  • Surface and includes a plurality of photoresist layers arranged in parallel (eg, red photoresist, green photoresist, blue a pair of substrates 23 including: a second substrate 200; the active switch array substrate 13 is disposed opposite the opposite substrate 23, wherein the photo spacers 232, 234 are located on the opposite substrate 23 and the active switch array substrate 13 for defining a liquid crystal space; and a transparent electrode layer 214 disposed on the second substrate 200; and a liquid crystal layer on the active switch array substrate 13 and The opposite substrate 23 is filled with the liquid crystal spacer space.
  • the color filter layer 212 material is, for example, a red, green, and blue glue. In some embodiments, the color filter layer 212 material can include, for example, a white and/or yellow glue.
  • the photo spacers 232, 234 have a convex shape with a narrow upper and a lower width.
  • the red, green and blue glue on the outer surface of the first substrate 100 is cured by ultraviolet light to form the color filter layer 212 and attached to the back surface of the active switch array substrate 13 .
  • a peripheral region of the active switch array substrate 13 includes a fiber material layer 220 between the active switch array substrate 13 and the opposite substrate 23.
  • the peripheral region of the active switch array substrate 13 further includes: a plurality of dummy spacers 236 formed on the pixel electrode layer 114 and an opaque matrix layer 115, the material of which is the same as The materials of the dummy spacers 236 are formed on the pixel electrode layer 114.
  • the peripheral region of the active switch array substrate 13 further includes a second protective layer 113 formed on the first protective layer 112.
  • a method for manufacturing the active switch array substrate 13 includes: providing a first substrate 100; forming a plurality of gate lines 106 On the first substrate 100; a gate cap layer 110 is formed on the first substrate 100 and covers the gate lines 106; a plurality of data lines 108 are formed on the gate cap layer 110.
  • the data line 108 and the gate lines 106 define a plurality of pixel regions; a first protection layer 112 is formed on the gate cover layer 110, and covers the data lines 108;
  • the pixel electrode layer 114 is formed on the first protective layer 112; at the same time, a plurality of photo spacers 232, 234 and an opaque matrix layer 115 are formed on the first protective layer 112, and the opaque layer
  • the matrix layer 115 has the same material as the materials of the photo spacers 232, 234; and sequentially forms a plurality of parallel disposed photoresist layers (eg, red photoresist, green photoresist, blue photoresist) on the first substrate An outer surface of 100 to complete a color filter layer 212.
  • the color filter layer 212 material is, for example, a red, green, and blue glue. In some embodiments, the color filter layer 212 material may include, for example, a white and/or yellow glue.
  • the step of forming a plurality of parallel disposed photoresist layers includes: spraying the red, green, and blue glue by an inkjet process The red green blue gel is cured by an ultraviolet light; the photoresist layer (red photoresist, green photoresist, blue photoresist) is formed on the outer surface of the first substrate.
  • the manufacturing method, the plurality of photo spacers 232, 234 and an opaque matrix layer 115 are simultaneously formed on the first protective layer 112, and the opaque matrix layer
  • the step of forming a material of the same material as the photo spacers 232, 234 includes: forming a light shielding material layer on the first protective layer 112 to cover the first protective layer 112; and the light shielding material layer Providing a photomask having a light transmissive region, a non-transparent region, and a semi-transmissive region; and performing an exposure manufacturing and a development manufacturing to pattern the light shielding material layer to form the photomask Photo spacers 232, 234 and the opaque matrix layer 115.
  • the photo spacers 232, 234 are formed by the same mask to form at least two step differences.
  • the reticle is a halftone reticle.
  • FIG. 3a is a schematic illustration of the glass surface of a color filter substrate in an exemplary liquid crystal display.
  • a liquid crystal display 300 includes a black photoresist material 310, a color filter substrate glass 312, a base 314, and a support frame 316.
  • the support frame 316 is connected to the base 314 , and the black photoresist material 310 is attached to the edge end 303 of the color filter substrate glass 312 .
  • the color filter substrate glass 312 faces upward.
  • FIG. 3b is a schematic diagram showing an opaque matrix layer and a red-green-blue adhesive material on the back surface of the active switch array substrate applied to the liquid crystal display according to the method of the present application.
  • a frameless liquid crystal display 301 includes: a red green blue rubber material 311 and a black rubber material (not The light transmissive matrix layer 313, an active switch array substrate 13 glass 315, a base 314, and a support frame 316.
  • the support frame 316 is connected to the base 314, and the black rubber (opaque matrix layer) 313 is attached to the edge end 303 (frame circuit) of the glass 315 of the active switch array substrate 13
  • the blue glue 311 is attached to the back surface 307 of the glass 315 of the active switch array substrate 13 , and the display area of the glass 315 of the active switch array substrate 13 has a color filter layer 212 .
  • the active switch array substrate 13 has a glass 315 facing upward.
  • the opposite substrate (color filter substrate) 23 has a glass surface facing the backlight module.
  • an inkjet device 400 includes: a red, green, and blue glue dispensing unit 403, a The ultraviolet light illuminates the light emitting unit 405, an ultraviolet light beam 410, and a red, green, and blue rubber material 407.
  • the distribution unit 403 of the red, green and blue rubber material applies the red, green and blue rubber material 407 to the back surface 307 of the glass 315 of the active switch array substrate 13 by an inkjet process, and the ultraviolet light is used.
  • the ultraviolet light beam 410 emitted by the illumination unit 405 is applied to the red green blue glue 407 to be cured on the color filter layer 212 or the back surface 307 of the active switch array substrate 13 glass 315.
  • the multi-gray mask can be divided into two types: a gray-tone mask and a half tone mask.
  • the gray mask is to make a micro slit below the resolution of the exposure machine, and then a part of the light source is covered by the micro slit portion to achieve the effect of half exposure.
  • a halftone mask is a half-exposure using a "semi-transmissive" film. Since both of the above methods are capable of exhibiting three types of exposure levels of "exposed portion", "half-exposed portion” and "unexposed portion” after one exposure process, two thicknesses can be formed after development.
  • Photoresist (by using such a difference in photoresist thickness, the pattern can be transferred to the panel substrate in a relatively small number of sheets, and the panel production efficiency is improved).
  • the cost of the mask will be slightly higher than that of a conventional mask.
  • the application can reduce the unevenness of the display screen, reduce the error of the alignment accuracy of the upper and lower substrates, and reduce the vacuum foaming.

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Abstract

一种主动开关阵列基板及其制造方法与其应用的显示面板，主动开关阵列基板（13），包括：一第一基底（100），具有一外表面，；多条闸极线（106），形成于第一基底（100）上；一闸极覆盖层（110），形成于第一基底（100）上，并覆盖闸极线（106）；多条数据线（108），形成于闸极覆盖层（110）上；一第一保护层（112），形成于闸极覆盖层（110）上，并覆盖数据线（108）；一画素电极层（114），形成于第一保护层（112）上；多个光间隔物（232,234），形成于第一保护层（112）上；一不透光矩阵层（115），其材料相同于该些光间隔物（232,234）的材料，形成于此第一保护层（112）上；以及一彩色滤光层（212），形成于此第一基底（100）的外表面，并包括多个平行配置的光阻层。

Description

主动开关阵列基板及其制造方法与显示面板 技术领域
本申请涉及一种制造方式，特别是涉及一种主动开关阵列基板及其制造方法与显示面板。
背景技术
随着科技进步，具有省电、无幅射、体积小、低耗电量、平面直角、高分辨率、画质稳定等多项优势的液晶显示器，尤其是现今各式信息产品如：手机、笔记本电脑、数字相机、PDA、液晶屏幕等产品越来越普及，亦使得液晶显示器(LCD)的需求量大大提升。因此如何满足日益要求高分辨率的画素设计，且具有高画质、空间利用效率佳、低消耗功率、无辐射等优越特性的主动开关阵列液晶显示器(Thin Film Transistor Liquid Crystal Display，TFT-LCD)已逐渐成为市场的主流。其中，主动开关阵列基板为组立液晶显示器的重要构件之一。
而主动开关阵列基板有分为具有红绿蓝光阻层在对向基板中(RGB on CF)、在平面转换型的液晶面板中具有红绿蓝光阻层在主动开关阵列基板(RGB on Array/In-Plane Switching，IPS Mode)，及在垂直配向型的液晶面板中具有红绿蓝光阻层在主动开关阵列基板(RGB on Array/Vertical Alignment，VA Mode)。如此一来，如何提高分辨率的画素设计，其中有关主动开关阵列基板的画素结构设计将扮演一个关键设计。传统液晶显示器制程中，红绿蓝光阻层是做在彩色滤光片玻璃端，但容易发生上下玻璃对组错位而导致产生画面不均匀的情形(MM，Movable Mura)。因此使用红绿蓝光阻层在主动开关阵列基板的制程可以改善显示画面不均匀的情形，且可以有效降低走线负载与提高开口率，而应用在曲面电视也非常容易凸显其优点。
发明内容
为了解决上述技术问题，本申请的目的在于，提供一种主动开关阵列基板及其制造方法与显示面板，将可以减少显示画面不均匀、减少上下基板玻璃对位精度误差及减少真空泡沫化。
本申请的目的及解决其技术问题是采用以下技术方案来实现的。依据本申请提出的一种主动开关阵列基板，包括：一第一基底，具有一外表面；多条闸极线，形成于所述第一基底上；一闸极覆盖层，形成于所述第一基底上，并覆盖该些闸极线；多条数据线，形成于所述闸极覆盖层上；一第一保护层，形成于所述闸极覆盖层上，并覆盖该些数据线；一画素电极层，形成于所述第一保护层上；多个光间隔物，形成于所述第一保护层上；一不透光矩阵层，其材料相同于该些光间隔物的材料，形成于所述第一保护层上；以及一彩色滤光层，形成于所述第一基底的外表面，并包括多个平行配置的光阻层。
本申请解决其技术问题还可采用以下技术措施进一步实现。
在本申请的一实施例中，所述彩色滤光层材料为一红绿蓝色胶材；所述彩色滤光层材料亦可以包括白色或黄色胶材。
在本申请的一实施例中，所述光间隔物外形为一上窄下宽的凸起外形。
在本申请的一实施例中，更包括：多个假光间隔物，形成于所述画素电极层上，及一不透光矩阵层，形成于所述画素电极层上。
在本申请的一实施例中，所述不透光矩阵层的材料相同于所述假光间隔物的材料。
本申请的又一目的一种主动开关阵列基板的制造方法，包括：提供一第一基底；将多条闸极线形成于所述第一基底上；将一闸极覆盖层形成于所述第一基底上，并覆盖该些闸极线；将多条数据线形成于所述闸极覆盖层上；将一第一保护层形成于所述闸极覆盖层上，并覆盖该些数据线；将一画素电极层形成于所述第一保护层上；同时将多个光间隔物及一不透光矩阵层形成于所述第一保护层上，且所述不透光矩阵层其材料相同于该些光间隔物的材料；以及依序形成多个平行配置的光阻层于所述第一基底的外表面，以完成一彩色滤光层。
在本申请的一实施例中，所述制造方法，所述形成多个平行配置的光阻层的步骤包括：通过喷墨工艺，喷涂所述红绿蓝色胶材；藉由一紫外光固化所述红绿蓝色胶材；形成所述光阻层于所述第一基底的外表面。
在本申请的一实施例中，所述制造方法，所述同时将多个光间隔物及一不透光矩阵层形成于所述第一保护层上，且所述不透光矩阵层其材料相同于该些光间隔物的材料的步骤包括：在所述第一保护层上形成一遮光材料层，以覆盖所述第一保护层；在所述遮光材料层上设置一光罩，所述光罩具有一透光区、一非透光区以及一半透光区；以及进行一曝光制造以及一显影制造，以图案化所述遮光材料层，而形成该些光间隔物及所述不透光矩阵层。
在本申请的一实施例中，所述制造方法，该些光间隔物是通过相同的光罩而形成至少两种段差。
在本申请的一实施例中，所述制造方法，所述光罩为半色调光罩。
本申请的另一目的一种液晶显示面板，包括：一主动开关阵列基板，包括：一第一基底，具有一外表面，其中所述外表面具有一红绿蓝色的胶材；多条闸极线，形成于所述第一基底上；一闸极覆盖层，形成于所述第一基底上，并覆盖该些闸极线；多条数据线，形成于所述闸极覆盖层上；一第一保护层，形成于所述闸极覆盖层上，并覆盖该些数据线；一画素电极层，形成于所述第一保护层上；多个光间隔物，形成于所述第一保护层上；一不透光矩阵层，其材料相同于该些光间隔物的材料，形成于所述第一保护层上；以及一彩色滤光层，形成于所述第一基底的外表面，并包括多个平行配置的光阻层；一对向基板，包括：一第二基底；所述主动开关阵列基板与所述对向基板对向设置，其中该些光间隔物位于所述对向基板以及 所述主动开关阵列基板之间，用以定义一液晶间隔空间；以及一透明电极层，设置在所述第二基底上；以及一液晶层于所述主动开关阵列基板以及所述对向基板之间，并填满所述液晶间隔空间。其中，所述特价显示面板还包括，一纤维材质层，设置于所述主动开关阵列基板以及所述对向基板之间。
本申请的再一目的一种液晶显示设备，包括背光模块，还包括所述的液晶显示面板。
有益效果
本申请可以减少显示画面不均匀、减少上下基板玻璃对位精度误差及减少真空泡沫化。
附图说明
图1a是范例性的具有红绿蓝光阻层及不透光矩阵层在对向基板中横截面示意图。
图1b是范例性的具有红绿蓝光阻层在主动开关阵列基板中横截面示意图。
图1c是另一范例性的具有红绿蓝光阻层在主动开关阵列基板中横截面示意图。
图2a是显示依据本申请的方法，应用于液晶显示面板中***区域的主动开关阵列基板中横截面示意图。
图2b是显示依据本申请的方法，应用于液晶显示面板中显示区域的主动开关阵列基板中横截面示意图。
图2c是显示依据本申请的方法，应用于液晶显示面板中另一***区域的主动开关阵列基板中横截面示意图。
图2d是显示依据本申请的方法，应用于液晶显示面板中的主动开关阵列基板中横截面示意图。
图3a是范例性液晶显示器中的彩色滤光片基板玻璃面的示意图。
图3b是显示依据本申请的方法，应用于液晶显示器中的主动开关阵列基板背面具有不透光矩阵层及红绿蓝色胶材示意图。
图3c是使用喷墨方式及紫外线照射方式使红绿蓝色胶材贴附于主动开关阵列基板背面示意图。
具体实施方式
以下各实施例的说明是参考附加的图式，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。
附图和说明被认为在本质上是示出性的，而不是限制性的。在图中，结构相似的单元是以相同标号表示。另外，为了理解和便于描述，附图中示出的每个组件的尺寸和厚度是任意 示出的，但是本申请不限于此。
在附图中，为了清晰起见，夸大了层、膜、面板、区域等的厚度。在附图中，为了理解和便于描述，夸大了一些层和区域的厚度。将理解的是，当例如层、膜、区域或基底的组件被称作“在”另一组件“上”时，所述组件可以直接在所述另一组件上，或者也可以存在中间组件。
另外，在说明书中，除非明确地描述为相反的，否则词语“包括”将被理解为意指包括所述组件，但是不排除任何其它组件。此外，在说明书中，“在......上”意指位于目标组件上方或者下方，而不意指必须位于基于重力方向的顶部上。
为更进一步阐述本申请为达成预定发明目的所采取的技术手段及功效，以下结合附图及较佳实施例，对依据本申请提出的一种主动开关阵列基板及其制造方法与显示面板，其具体实施方式、结构、特征及其功效，详细说明如后。
本申请的液晶显示面板可包括主动开关阵列(Thin Film Transistor，TFT)基板、彩色滤光层(Color Filter，CF)基板与形成于两基板之间的液晶层。
在一实施例中，本申请的液晶显示面板可为曲面型显示面板。
在一实施例中，本申请的主动开关阵列(TFT)及彩色滤光层(CF)可形成于同一基板上。
图1a为范例性的具有红绿蓝光阻层及不透光矩阵层在对向基板中横截面示意图。请参照图1a，一种具有红绿蓝光阻层及不透光矩阵层在对向基板的液晶面板，包括：一对向基板20，包括：一第二基底200；一彩色滤光层212，设置在所述第二基底200上，并包括多个平行配置的光阻层(红色光阻、绿色光阻、蓝色光阻)；一不透光矩阵层210，设置在所述第二基底200上；一透明电极层214，设置在所述彩色滤光层212上；以及多个光间隔物216、218，设置在所述透明电极层214上；一主动开关阵列基板10，包括：一第一基底100；所述主动开关阵列基板10与所述对向基板20对向设置，其中该些光间隔物216、218位于所述对向基板20以及所述主动开关阵列基板10之间，用以定义一液晶间隔空间；多条闸极线106，形成于所述第一基底100上；一闸极覆盖层110，形成于所述第一基底100上，并覆盖该些闸极线106；多条数据线108，形成于所述闸极覆盖层110上，其中该些数据线108与该些闸极线106定义出多个画素区；一第一保护层112，形成于所述闸极覆盖层110上，并覆盖该些数据线108；一画素电极层114，形成于所述第一保护层112上；以及一液晶层(图未示)于所述对向基板20以及所述主动开关阵列基板10之间，并填满所述液晶间隔空间。
图1b为范例性的具有红绿蓝光阻层在主动开关阵列基板中横截面示意图。请参照图1b，一种在平面转换型的液晶面板中具有红绿蓝光阻层在主动开关阵列基板，包括：一主动开关阵列基板11，包括：一第一基底100；多条闸极线106，形成于所述第一基底100上；一闸 极覆盖层110，形成于所述第一基底100上，并覆盖该些闸极线106；多条数据线108，形成于所述闸极覆盖层110上，其中该些数据线108与该些闸极线106定义出多个画素区；一第一保护层112，形成于所述闸极覆盖层110上，并覆盖该些数据线108；一彩色滤光层212，形成于所述第一保护层112上，并包括多个平行配置的光阻层(红色光阻、绿色光阻、蓝色光阻)；一第二保护层113，形成于所述彩色滤光层212上，并覆盖所述第一保护层112；一画素电极层114，形成于所述第二保护层113上；一对向基板21，包括：一第二基底200；一不透光矩阵层210，设置在所述第二基底200上；一透明电极层214，设置在所述第二基底200上，并覆盖该些不透光矩阵层210；以及多个光间隔物217、219，设置在所述透明电极层214上；所述主动开关阵列基板11与所述对向基板21对向设置，其中该些光间隔物217、219位于所述对向基板21以及所述主动开关阵列基板11之间，用以定义一液晶间隔空间；以及一液晶层(图未示)于所述对向基板21以及所述主动开关阵列基板11之间，并填满所述液晶间隔空间。
图1c为另一范例性的具有红绿蓝光阻层在主动开关阵列基板中横截面示意图。请参照图1c，一种在垂直配向型的液晶面板中具有红绿蓝光阻层在主动开关阵列基板，包括：一主动开关阵列基板12，包括：一第一基底100；多条闸极线106，形成于所述第一基底100上；一闸极覆盖层110，形成于所述第一基底100上，并覆盖该些闸极线106；多条数据线108，形成于所述闸极覆盖层110上，其中该些数据线108与该些闸极线106定义出多个画素区；一第一保护层112，形成于所述闸极覆盖层110上，并覆盖该些数据线108；一彩色滤光层212，形成于所述第一保护层112上，并包括多个平行配置的光阻层(红色光阻、绿色光阻、蓝色光阻)；一第二保护层113，形成于所述彩色滤光层212上，并覆盖所述第一保护层112；一画素电极层114，形成于所述第二保护层113上；多个光间隔物213、215，形成于所述第二保护层113上，并与所述第二保护层113连接在一起；一对向基板22，包括：一第二基底200；一不透光矩阵层210，设置在所述第二基底200上；以及一透明电极层214，设置在所述第二基底200上，并覆盖该些不透光矩阵层210；所述主动开关阵列基板12与所述对向基板22对向设置，其中该些光间隔物213、215位于所述对向基板22以及所述主动开关阵列基板12之间，用以定义一液晶间隔空间；以及一液晶层(图未示)于所述对向基板22以及所述主动开关阵列基板12之间，并填满所述液晶间隔空间。
图2a为显示依据本申请的方法，应用于液晶显示面板中***区域的主动开关阵列基板中横截面示意图、图2b为显示依据本申请的方法，应用于液晶显示面板中显示区域的主动开关阵列基板中横截面示意图、图2c为显示依据本申请的方法，应用于液晶显示面板中另一***区域的主动开关阵列基板中横截面示意图及图2d为显示依据本申请的方法，应用于液晶显示 面板中的主动开关阵列基板中横截面示意图。请参照图2a、图2b、图2c及图2d，在本申请一实施例中，一主动开关阵列基板13，包括：一第一基底100，具有一外表面；多条闸极线106，形成于所述第一基底100上；一闸极覆盖层110，形成于所述第一基底100上，并覆盖该些闸极线106；多条数据线108，形成于所述闸极覆盖层110上，其中该些数据线108与该些闸极线106定义出多个画素区；一第一保护层112，形成于所述闸极覆盖层110上，并覆盖该些数据线108；一画素电极层114，形成于所述第一保护层112上；多个光间隔物232、234，形成于所述第一保护层112上；一不透光矩阵层115，其材料相同于该些光间隔物232、234的材料，形成于所述第一保护层112上；以及一彩色滤光层212，形成于所述第一基底100的外表面，并包括多个平行配置的光阻层(例如红色光阻、绿色光阻、蓝色光阻)。
在一实施例中，所述彩色滤光层212材料例如为一红绿蓝色胶材。在一些实施例中，彩色滤光层212材料可包括例如白色及/或黄色胶材。
在一实施例中，所述光间隔物232、234外形为一上窄下宽的凸起外形。
在一实施例中，所述第一基底100外表面的红绿蓝色胶材藉由紫外光照射固化，以形成所述彩色滤色层212，贴附在所述主动开关阵列基板13玻璃背面。
在一实施例中，所述主动开关阵列基板13的***区域，包括一纤维材质层220于所述主动开关阵列基板13以及所述对向基板23之间。
在一实施例中，所述主动开关阵列基板13的***区域，更包括：多个假光间隔物236，形成于所述画素电极层114上及一不透光矩阵层115，其材料相同于该些假光间隔物236的材料，形成于所述画素电极层114上。
在一实施例中，所述主动开关阵列基板13的***区域，更包括：一第二保护层113，形成于所述第一保护层112上。
请参照图2a、图2b、图2c及图2d，在本申请一实施例中，一种液晶显示面板，包括：一主动开关阵列基板13，包括：一第一基底100，具有一外表面；多条闸极线106，形成于所述第一基底100上；一闸极覆盖层110，形成于所述第一基底100上，并覆盖该些闸极线106；多条数据线108，形成于所述闸极覆盖层110上，其中该些数据线108与该些闸极线106定义出多个画素区；一第一保护层112，形成于所述闸极覆盖层110上，并覆盖该些数据线108；一画素电极层114，形成于所述第一保护层112上；多个光间隔物232、234，形成于所述第一保护层112上；一不透光矩阵层115，其材料相同于该些光间隔物232、234的材料，形成于所述第一保护层112上；以及一彩色滤光层212，形成于所述第一基底100的外表面，并包括多个平行配置的光阻层(例如红色光阻、绿色光阻、蓝色光阻)；一对向基板23，包括：一第二基底200；所述主动开关阵列基板13与所述对向基板23对向设置，其中该些光间隔 物232、234位于所述对向基板23以及所述主动开关阵列基板13之间，用以定义一液晶间隔空间；以及一透明电极层214，设置在所述第二基底200上；以及一液晶层于所述主动开关阵列基板13以及所述对向基板23之间，并填满所述液晶间隔空间。
在一实施例中，所述彩色滤光层212材料例如为一红绿蓝色胶材，在一些实施例中，彩色滤光层212材料可包括例如白色及/或黄色胶材。
在一实施例中，所述光间隔物232、234外形为一上窄下宽的凸起外形。
在一实施例中，所述第一基底100外表面的红绿蓝色胶材藉由紫外光照射固化，以形成所述彩色滤色层212，贴附在所述主动开关阵列基板13玻璃背面。
在一实施例中，所述主动开关阵列基板13的***区域，包括一纤维材质层220于所述主动开关阵列基板13以及所述对向基板23之间。
在一实施例中，所述主动开关阵列基板13的***区域，更包括：多个假光间隔物236，形成于所述画素电极层114上及一不透光矩阵层115，其材料相同于该些假光间隔物236的材料，形成于所述画素电极层114上。
在一实施例中，所述主动开关阵列基板13的***区域，更包括：一第二保护层113，形成于所述第一保护层112上。
请参照图2a、图2b、图2c及图2d，在本申请一实施例中，一种液晶显示设备，包括背光模块，还包括：一主动开关阵列基板13，包括：一第一基底100，具有一外表面；多条闸极线106，形成于所述第一基底100上；一闸极覆盖层110，形成于所述第一基底100上，并覆盖该些闸极线106；多条数据线108，形成于所述闸极覆盖层110上，其中该些数据线108与该些闸极线106定义出多个画素区；一第一保护层112，形成于所述闸极覆盖层110上，并覆盖该些数据线108；一画素电极层114，形成于所述第一保护层112上；多个光间隔物232、234，形成于所述第一保护层112上；一不透光矩阵层115，其材料相同于该些光间隔物232、234的材料，形成于所述第一保护层112上；以及一彩色滤光层212，形成于所述第一基底100的外表面，并包括多个平行配置的光阻层(例如红色光阻、绿色光阻、蓝色光阻)；一对向基板23，包括：一第二基底200；所述主动开关阵列基板13与所述对向基板23对向设置，其中该些光间隔物232、234位于所述对向基板23以及所述主动开关阵列基板13之间，用以定义一液晶间隔空间；以及一透明电极层214，设置在所述第二基底200上；以及一液晶层于所述主动开关阵列基板13以及所述对向基板23之间，并填满所述液晶间隔空间。
在一实施例中，所述彩色滤光层212材料例如为一红绿蓝色胶材，在一些实施例中，彩色滤光层212材料可包括例如白色及/或黄色胶材。
在一实施例中，所述光间隔物232、234外形为一上窄下宽的凸起外形。
在一实施例中，所述第一基底100外表面的红绿蓝色胶材藉由紫外光照射固化，以形成所述彩色滤色层212，贴附在所述主动开关阵列基板13玻璃背面。
在一实施例中，所述主动开关阵列基板13的***区域，包括一纤维材质层220于所述主动开关阵列基板13以及所述对向基板23之间。
在一实施例中，所述主动开关阵列基板13的***区域，更包括：多个假光间隔物236，形成于所述画素电极层114上及一不透光矩阵层115，其材料相同于该些假光间隔物236的材料，形成于所述画素电极层114上。
在一实施例中，所述主动开关阵列基板13的***区域，更包括：一第二保护层113，形成于所述第一保护层112上。
请参照图2a、图2b、图2c及图2d，在本申请一实施例中，一种主动开关阵列基板13的制造方法，包括：提供一第一基底100；将多条闸极线106形成于所述第一基底100上；将一闸极覆盖层110形成于所述第一基底100上，并覆盖该些闸极线106；将多条数据线108形成于所述闸极覆盖层110上，其中该些数据线108与该些闸极线106定义出多个画素区；将一第一保护层112形成于所述闸极覆盖层110上，并覆盖该些数据线108；将一画素电极层114形成于所述第一保护层112上；同时将多个光间隔物232、234及一不透光矩阵层115形成于所述第一保护层112上，且所述不透光矩阵层115其材料相同于该些光间隔物232、234的材料；以及依序形成多个平行配置的光阻层(例如红色光阻、绿色光阻、蓝色光阻)于所述第一基底100的外表面，以完成一彩色滤光层212。
在本申请的一实施例中，所述彩色滤光层212材料例如为一红绿蓝色胶材，在一些实施例中，彩色滤光层212材料可包括例如白色及/或黄色胶材。
在本申请的一实施例中，所述形成多个平行配置的光阻层(红色光阻、绿色光阻、蓝色光阻)的步骤包括：通过喷墨工艺，喷涂所述红绿蓝色胶材；藉由一紫外光固化所述红绿蓝色胶材；形成所述光阻层(红色光阻、绿色光阻、蓝色光阻)于所述第一基底的外表面。
在一实施例中，所述制造方法，所述同时将多个光间隔物232、234及一不透光矩阵层115形成于所述第一保护层112上，且所述不透光矩阵层115其材料相同于该些光间隔物232、234的材料的步骤包括：在所述第一保护层112上形成一遮光材料层，以覆盖所述第一保护层112；在所述遮光材料层上设置一光罩，所述光罩具有一透光区、一非透光区以及一半透光区；以及进行一曝光制造以及一显影制造，以图案化所述遮光材料层，而形成该些光间隔物232、234及所述不透光矩阵层115。
在一实施例中，所述制造方法，该些光间隔物232、234是通过相同的光罩而形成至少两种段差。
在一实施例中，所述制造方法，所述光罩为半色调光罩。
图3a是范例性液晶显示器中的彩色滤光片基板玻璃面的示意图。请参照图3a，一种液晶显示器300，包括：一黑色光阻材质310、一彩色滤光片基板玻璃312、一机座314、一支撑架316。所述支撑架316连接所述机座314，且所述黑色光阻材质310贴附于所述彩色滤光片基板玻璃312的边缘端303。
在一实施例中，所述彩色滤光片基板玻璃312面朝上。
图3b是显示依据本申请的方法，应用于液晶显示器中的主动开关阵列基板背面具有不透光矩阵层及红绿蓝色胶材示意图。请参照图2a、图2b、图2c、图2d及图3b，在本申请一实施例中，一种无边框液晶显示器301，包括：一红绿蓝色胶材311、一黑色胶材(不透光矩阵层)313、一主动开关阵列基板13玻璃315、一机座314、一支撑架316。所述支撑架316连接所述机座314，所述黑色胶材(不透光矩阵层)313贴附于所述主动开关阵列基板13玻璃315的边缘端303(边框电路)，所述红绿蓝色胶材311贴附于所述主动开关阵列基板13玻璃315的背面307，且所述主动开关阵列基板13玻璃315的显示区域具有一彩色滤光层212。
在一实施例中，所述主动开关阵列基板13玻璃315面朝上。
在一实施例中，所述对向基板(彩色滤光片基板)23玻璃面朝向背光模块。
图3c是使用喷墨方式及紫外线照射方式使红绿蓝色胶材贴附于主动开关阵列基板背面示意图。请参照图2a、图2b、图2c、图2d、图3b及图3c，在本申请一实施例中，一种喷墨设备400，包括：一红绿蓝色胶材的分配单元403、一紫外光线照射发光单元405、一紫外线光束410及一红绿蓝色胶材407。所述红绿蓝色胶材的分配单元403将所述红绿蓝色胶材407，以喷墨工艺，涂上于所述主动开关阵列基板13玻璃315的背面307，且以所述紫外光线照射发光单元405所发出的紫外线光束410给予所述红绿蓝色胶材407固化于彩色滤光层212上或所述主动开关阵列基板13玻璃315的背面307上。
多灰阶光罩，可分为灰色光罩(Gray-tone mask)和半色调光罩(Half tone mask)2种。灰色光罩是制作出曝光机分辨率以下的微缝，再藉由此微缝部位遮住一部份的光源，以达成半曝光的效果。另一方面，半色调光罩是利用「半透过」的膜，来进行半曝光。因为以上两种方式皆是在1次的曝光过程后即可呈现出「曝光部分」「半曝光部分」及「未曝光部分」的3种的曝光层次，故在显影后能够形成2种厚度的光阻(藉由利用这样的光阻厚度差异、便可以较一般少的片数下将图形转写至面板基板上，并达成面板生产効率的提升)。若为半色调光罩则光罩成本会略高于一般光罩。
本申请可以减少显示画面不均匀、减少上下基板玻璃对位精度误差及减少真空泡沫化。
“在一些实施例中”及“在各种实施例中”等用语被重复地使用。所述用语通常不是指 相同的实施例；但它亦可以是指相同的实施例。“包含”、“具有”及“包括”等用词是同义词，除非其前后文意显示出其它意思。
以上所述，仅是本申请的较佳实施例而已，并非对本申请作任何形式上的限制，虽然本申请已以较佳实施例揭露如上，然而并非用以限定本申请，任何熟悉本专业的技术人员，在不脱离本申请技术方案范围内，当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例，但凡是未脱离本申请技术方案的内容，依据本申请的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均仍属于本申请技术方案的范围内。

Claims (15)

  1. 一种主动开关阵列基板，包括：
    一第一基底，具有一外表面；
    多条闸极线，形成于所述第一基底上；
    一闸极覆盖层，形成于所述第一基底上，并覆盖该些闸极线；
    多条数据线，形成于所述闸极覆盖层上；
    一第一保护层，形成于所述闸极覆盖层上，并覆盖该些数据线；
    一画素电极层，形成于所述第一保护层上；
    多个光间隔物，形成于所述第一保护层上；
    一不透光矩阵层，其材料相同于该些光间隔物的材料，形成于所述第一保护层上；以及
    一彩色滤光层，形成于所述第一基底的外表面，并包括多个平行配置的光阻层。
  2. 如权利要求1所述的主动开关阵列基板，其中，所述彩色滤光层材料为一红绿蓝色胶材。
  3. 如权利要求1所述的主动开关阵列基板，其中，所述彩色滤光层材料包括白色或黄色胶材。
  4. 如权利要求1所述的主动开关阵列基板，其中，所述光间隔物外形为一上窄下宽的凸起外形。
  5. 如权利要求1所述的主动开关阵列基板，更包括：多个假光间隔物，形成于所述画素电极层上，及一不透光矩阵层，形成于所述画素电极层上。
  6. 如权利要求1所述的主动开关阵列基板，其中，所述不透光矩阵层的材料相同于所述假光间隔物的材料。
  7. 一种主动开关阵列基板的制造方法，包括：
    提供一第一基底；
    将多条闸极线形成于所述第一基底上；
    将一闸极覆盖层形成于所述第一基底上，并覆盖该些闸极线；
    将多条数据线形成于所述闸极覆盖层上；
    将一第一保护层形成于所述闸极覆盖层上，并覆盖该些数据线；
    将一画素电极层形成于所述第一保护层上；
    同时将多个光间隔物及一不透光矩阵层形成于所述第一保护层上，且所述不透光矩阵层其材料相同于该些光间隔物的材料；以及
    依序形成多个平行配置的光阻层于所述第一基底的外表面，以完成一彩色滤光层。
  8. 如权利要求7所述的主动开关阵列基板的制造方法，其中，所述彩色滤光层材料为一红绿蓝色胶材。
  9. 如权利要求8所述的主动开关阵列基板的制造方法，其中，所述形成多个平行配置的光阻层的步骤包括：
    通过喷墨工艺，喷涂所述红绿蓝色胶材；
    藉由一紫外光固化所述红绿蓝色胶材；
    形成所述光阻层于所述第一基底的外表面。
  10. 如权利要求7所述的主动开关阵列基板的制造方法，其中，所述彩色滤光层材料包括白色或黄色胶材。
  11. 如权利要求7所述的主动开关阵列基板的制造方法，其中，所述同时将多个光间隔物及一不透光矩阵层形成于所述第一保护层上，且所述不透光矩阵层其材料相同于该些光间隔物的材料的步骤包括：
    在所述第一保护层上形成一遮光材料层，以覆盖所述第一保护层；
    在所述遮光材料层上设置一光罩，所述光罩具有一透光区、一非透光区以及一半透光区；以及
    进行一曝光制造以及一显影制造，以图案化所述遮光材料层，而形成该些光间隔物及所述不透光矩阵层。
  12. 如权利要求7所述的主动开关阵列基板的制造方法，其中，该些光间隔物是通过相同的光罩而形成至少两种段差。
  13. 如权利要求12所述的主动开关阵列基板的制造方法，其中，所述光罩为半色调光罩。
  14. 一种液晶显示面板，包括：
    一主动开关阵列基板，包括：
    一第一基底，具有一外表面，其中所述外表面具有一红绿蓝色胶材；
    多条闸极线，形成于所述第一基底上；
    一闸极覆盖层，形成于所述第一基底上，并覆盖该些闸极线；
    多条数据线，形成于所述闸极覆盖层上；
    一第一保护层，形成于所述闸极覆盖层上，并覆盖该些数据线；
    一画素电极层，形成于所述第一保护层上；
    多个光间隔物，形成于所述第一保护层上；
    一不透光矩阵层，其材料相同于该些光间隔物的材料，形成于所述第一保护层上；
    一彩色滤光层，形成于所述第一基底的外表面，并包括多个平行配置的光阻层；
    一对向基板，包括：一第二基底；所述主动开关阵列基板与所述对向基板对向设置，其中该些光间隔物位于所述对向基板以及所述主动开关阵列基板之间，用以定义一液晶间隔空间；
    一透明电极层，设置在所述第二基底上；以及
    一液晶层于所述主动开关阵列基板以及所述对向基板之间，并填满所述液晶间隔空间。
  15. 如权利要求14所述的液晶显示面板，更包括，一纤维材质层，设置于所述主动开关阵列基板以及所述对向基板之间。
PCT/CN2017/091472 2017-03-20 2017-07-03 主动开关阵列基板及其制造方法与显示面板 WO2018171079A1 (zh)

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CN107450240B (zh) * 2017-09-19 2020-06-16 惠科股份有限公司 阵列基板及其显示面板
CN107678221B (zh) * 2017-11-03 2020-05-08 惠科股份有限公司 主动开关阵列基板及其应用的显示设备与其制造方法
CN107608124A (zh) 2017-11-03 2018-01-19 惠科股份有限公司 主动开关阵列基板及其制造方法和液晶面板
CN109254446A (zh) * 2018-10-24 2019-01-22 惠科股份有限公司 基板及显示面板的制造方法
CN109904173B (zh) * 2019-01-11 2021-08-06 惠科股份有限公司 一种显示面板、显示面板的制造方法和显示装置
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