WO2018152659A1 - 一种背接触太阳能电池串及其制备方法和组件、*** - Google Patents

一种背接触太阳能电池串及其制备方法和组件、*** Download PDF

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WO2018152659A1
WO2018152659A1 PCT/CN2017/000515 CN2017000515W WO2018152659A1 WO 2018152659 A1 WO2018152659 A1 WO 2018152659A1 CN 2017000515 W CN2017000515 W CN 2017000515W WO 2018152659 A1 WO2018152659 A1 WO 2018152659A1
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Prior art keywords
emitter
solar cell
base
back contact
electrode
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PCT/CN2017/000515
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English (en)
French (fr)
Inventor
林建伟
刘志锋
季根华
章康平
刘勇
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泰州中来光电科技有限公司
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Priority to JP2019544633A priority Critical patent/JP2020509585A/ja
Priority to EP17897873.0A priority patent/EP3588581A4/en
Publication of WO2018152659A1 publication Critical patent/WO2018152659A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of solar cell technologies, and in particular, to a back contact solar cell string and a preparation method, component and system thereof.
  • Solar cells are a kind of semiconductor device that converts light energy into electrical energy.
  • the low production cost and high energy conversion efficiency have always been the goal pursued by the solar cell industry.
  • the emitter contact electrode and the base contact electrode are respectively located on the front and back sides of the cell sheet.
  • the front side of the battery is the light receiving surface, and the coverage of the front metal emitter contact electrode will cause a part of the incident sunlight to be blocked by the metal electrode, causing a part of optical loss.
  • the coverage area of the front metal electrode of the ordinary single crystal silicon solar cell is about 7%, and reducing the front cover of the metal electrode can directly improve the energy conversion efficiency of the battery.
  • the narrow strip back contact battery is a battery in which both the emitter and the base contact electrodes are placed on the back surface (non-light-receiving surface) of the battery, and the light-receiving surface of the battery is shielded by any metal electrode, thereby effectively increasing the short-circuit current of the battery sheet.
  • the energy conversion efficiency of the cell is improved.
  • the solar cell with back contact structure is the most energy-efficient cell in the crystalline silicon solar cell produced by solar energy industrialization. Its high conversion efficiency and low component packaging cost have been favored by people.
  • the metallization process is mostly realized by electroplating with complicated processes. This method has excellent performance in reducing the series resistance of the back contact battery and improving the open circuit voltage of the battery, but the method is excellent. The process is complicated, the discharged waste is seriously polluting the environment, and it is not compatible with the current mainstream metallization methods of industrial production, so it is not conducive to low-cost industrialization.
  • the object of the present invention is to provide a novel back contact solar cell string with high conversion efficiency, low component loss, no need for alignment welding, and cost saving of silver paste, and a preparation method, component and system thereof.
  • a back contact solar cell string comprising a back contact solar cell and a conductive member for back contact solar cell electrical connection, the back surface of the back contact solar cell comprising an emitter p+ region and a base n+ region alternately arranged, characterized
  • the back surface of the back contact solar cell further includes an emitter segment electrode disposed in the emitter p+ region, and a base segment electrode disposed in the base n+ region, the emitter segment An emitter wire electrode is disposed on the electrode, and the base segment electrode is provided with a base wire electrode, and the emitter wire electrode and the base wire electrode extend backward from the cell sheet, and the back contact
  • the emitter wire electrode of the solar cell and the base wire electrode of the adjacent back contact solar cell are electrically connected by a conductive member.
  • the emitter segmented electrode is provided with an emitter thermoconductive layer
  • the base segment electrode is provided with a base thermosensitive conductive layer
  • the emitter of the emitter segment electrode is thermally conductive
  • the emitter electrode electrodes are laid one by one on the layer, and the base wire electrodes are laid one by one on the base thermistor layers of the base segment electrodes.
  • thermosensitive conductive layer is a solder paste conductive layer.
  • the conductive member is coated with a conductive paste, and the conductive member is a metal material.
  • the emitter segment electrode and the base segment electrode are each composed of discontinuous dots whose centers are in a straight line; or, the emitter segment electrode and the base segment electrode Consisting of non-continuous lines; or, the emitter segment electrode and the base segment electrode are arranged by discontinuous dot misalignment; and the width of the emitter segment electrode and the base segment electrode cannot be Exceeding the width of the doped region where the emitter and the base are located.
  • the back contact solar cell has a resistivity of 1-30 ⁇ cm and a thickness of 50-300 ⁇ m.
  • the back contact solar cell emitter p+ region and the base n+ region are alternately arranged alternately on the back surface of the battery, and the emitter p+ region and the base n+ region are further provided with a passivation layer for the battery surface. Passivation.
  • the width of the emitter p+ region is 200-3000 ⁇ m, and the width of the base n+ region is 100-2000 ⁇ m.
  • the back contact solar cell is a narrow strip back contact solar cell in which the cell sheets are equally spaced.
  • the emitter segment electrode is a silver aluminum paste electrode
  • the base segment electrode is a silver paste electrode
  • the back contact solar cell is a back contact N-type single crystal silicon solar cell.
  • the length of the emitter wire electrode and the base wire electrode extending from the edge of the back contact cell is 0.5-5 mm.
  • the invention also provides a preparation method of a back contact solar cell string, comprising the following steps:
  • step (3) is further included:
  • Step (4) becomes step (4)':
  • the emitter wire electrodes are laid one by one on the emitter thermistor conductive layer on the emitter segment electrode, and the base wire electrodes are laid one by one on the base On the base of the segmented electrode on the thermal conductive layer.
  • the sintering peak temperature is 850-950 °C.
  • the length of the emitter wire electrode and the base wire electrode extending from the edge of the back contact cell is 0.5-5 mm.
  • the present invention also provides a solar cell module comprising a solar cell string, the solar cell string being the above-described back contact solar cell string.
  • the present invention also provides a solar cell system comprising more than one solar cell module, the solar cell module being the solar cell module described above.
  • the invention replaces the conventional silver electrode with the conventional silver electrode as the back electrode of the back contact battery, thereby saving the cost of the silver paste, and simultaneously extending the emitter and the base wire electrode out of the cell sheet, and the emitter wire of the adjacent cell sheet.
  • the electrode and the base wire electrode are electrically connected by the conductive member, thereby realizing the series connection between the back contact cells.
  • the method is simple in operation, does not require high-precision alignment welding equipment, and the conductive member also functions as a lateral convergence. The lateral transmission loss between the carriers is reduced, and the filling factor of the battery is improved; since the non-wound narrow strip battery is connected in series, the short-circuit current of the component is reduced, thereby significantly reducing the package loss of the component.
  • FIG. 1 is a schematic view showing the structure of a back surface after the first step of the method for preparing a back contact solar cell string according to Embodiment 1 and Embodiment 2.
  • FIGS. 2a, 2b and 2c are schematic diagrams showing the structure of the back surface after the second step of the method for preparing the back contact solar cell string according to the first embodiment and the second embodiment of the present invention.
  • FIG 3 is a schematic view showing a laser cutting direction in the third step of the method for preparing a back contact solar cell string according to Embodiments 1 and 2 of the present invention.
  • FIG 4 is a schematic view showing the structure of the back surface after the third step of the method for preparing the back contact solar cell string according to the first embodiment and the second embodiment of the present invention.
  • Fig. 5 is a schematic view showing the structure of the back surface after the third step of the method for preparing a back contact solar cell string according to Embodiment 2 of the present invention.
  • Fig. 6 is a partially enlarged plan view showing the structure of the back surface after the third step of the method for fabricating the back contact solar cell string according to the second embodiment of the present invention.
  • FIG. 7 is a schematic structural view of a back surface after the fourth step of the method for preparing a back contact solar cell string according to Embodiment 1 of the present invention.
  • FIG. 8 is a schematic diagram of a back contact solar cell string connected in series by a conductive member in the fifth step of the method for preparing a back contact solar cell string according to Embodiment 1 of the present invention.
  • Fig. 9 is a schematic view showing the structure of the back surface after the fourth step of the method for fabricating the back contact solar cell string according to the second embodiment of the present invention.
  • FIG. 10 is a schematic diagram of a back contact solar cell string connected in series by a conductive member in the fifth step of the method for preparing a back contact solar cell string according to Embodiment 2 of the present invention.
  • a back contact solar cell string provided by the embodiment includes a back contact solar cell and a conductive member for back contact solar cell electrical connection, and the back surface of the back contact solar cell includes alternately arranged emission.
  • a pole p+ region 10 and a base n+ region 11 an emitter segment electrode 20 is disposed on the emitter p+ region 10
  • a base segment electrode 21 is disposed on the base n+ region 11
  • an emitter is disposed on the emitter segment electrode 20.
  • the wire electrode 40 and the base segment electrode 21 are provided with a base wire The electrode 41; or, the emitter segment electrode 20 is provided with an emitter thermal conductive layer 30, the base segment electrode 21 is provided with a base thermal conductive layer 31, and the emitter of the emitter segment electrode 20 is hot.
  • the emitter electrode electrode 40 is disposed on the sensitive conductive layer 30-to-one, and the base wire electrode 41 is laid on the base thermal-sensitive conductive layer of the base segment electrode 21 in a one-to-one correspondence; the emitter wire electrode 40 and the base wire electrode 41 extend in opposite directions out of the cell, and the emitter wire electrode 40 is electrically connected to the base wire electrode 41 of the adjacent back contact solar cell through the conductive member 50.
  • the finished battery back surface structure is shown in Figures 8 and 10.
  • the back contact solar cell string of the embodiment saves the cost of the silver paste, and simultaneously extends the emitter and the base wire electrode out of the cell sheet, and the emitter metal wire electrode and the base wire electrode of the adjacent cell sheet pass the conductive
  • the parts are electrically connected to realize the series connection between the back contact batteries.
  • the method is simple in operation and does not require high-precision alignment welding equipment, and the conductive member also functions as a lateral confluence, reducing carriers between the electrodes.
  • the lateral transmission loss increases the fill factor of the battery.
  • the heat sensitive conductive layer is a solder paste conductive layer.
  • the ink pattern of the solder paste may be circular or line-shaped, and its width may not exceed the width of the doped region where it is disposed.
  • the emitter-thermally conductive layer 30 after the ink is printed must be located at the emitter segment electrode. 20, and the base thermal conductive layer 31 after the over-inking is placed on the base segment electrode 21, as shown in Figs.
  • the conductive member 50 is coated with a conductive paste, and the conductive member 50 may be made of copper or aluminum or other conductive material.
  • the back contact solar cell is a 6-inch strip-shaped solar cell cut into 6-inch cells at equal intervals, and the solar cell has a width of 20-80 mm, preferably 26-78 mm, and a length of 156-162 mm.
  • the use of a non-wound, narrow strip of battery for series connection reduces the short circuit current of the component and significantly reduces component package losses.
  • both the emitter segment electrode 20 and the base segment electrode 21 are composed of discontinuous dots whose centers are in a straight line; or, consist of non-continuous lines; or, by discontinuous The dots are misaligned; and the width of the emitter segment electrode 20 and the base segment electrode 21 cannot exceed the width of the doped region where the emitter and the base are located.
  • the front surface of the back contact solar cell is provided with a passivation anti-reflection film, and the back surface is provided with a blunt surface Film.
  • the back contact solar cell has a resistivity of 1-30 ⁇ cm, a thickness of 50-300 ⁇ m, a width of the emitter p+ region 10 of 200-3000 ⁇ m, and a base n+ region 11 width of 100-2000 ⁇ m.
  • the emitter segment electrode 20 is a silver aluminum paste electrode
  • the base segment electrode 21 is a silver paste electrode
  • the back contact solar cell is a back contact N-type single crystal silicon solar cell.
  • the emitter p+ region 10 and the base n+ region 11 are distributed in a long strip shape on the solar cell substrate.
  • One end of the emitter wire electrode 40 extends beyond the narrow strip back contact cell, while the base wire electrode 41 extends from the opposite direction out of the narrow strip back contact cell.
  • the emitter wire electrode 40 and the base wire electrode 41 extend from the edge of the strip-shaped back contact cell to a length of 0.5-5 mm.
  • the emitter p+ region 10 and the base n+ region 11 are alternately arranged on the back surface of the silicon wafer.
  • an N-type single crystal silicon substrate is selected, and the resistivity is 1-30 ⁇ cm.
  • the thickness is 50-300 ⁇ m, and the N-type crystalline silicon substrate is subjected to surface texturing treatment before use, and then the cell emitter p+ region 10 and the base n+ region 11 are alternately arranged by diffusion or ion implantation, masking, etching, and the like.
  • the back surface of the battery On the back surface of the battery.
  • the dielectric film of silicon oxide, silicon nitride and aluminum oxide is used to passivate the back surface of the battery and passivate and optically reduce the front surface, thereby forming the desired emitter p+ region 10 and the base n+ region 11 alternately.
  • the completed battery back surface structure is shown in Figure 1.
  • the emitter segment electrode 20 is printed on the emitter p+ region 10, and the base segment electrode 21 is printed on the base n+ region 11.
  • the emitter segment electrode 20 and the base segment electrode 21 are composed of discontinuous dots (Fig. 2a) whose centers are in a straight line.
  • the emitter segment electrode 20 and the base segment electrode 21 may also be composed of discontinuous lines (Fig. 2b), and the patterns in the emitter segment electrode 20 and the base segment electrode 21 may be a regular array.
  • the emitter segment electrode 20 and the base segment electrode 21 are arranged by discontinuous dot misalignment.
  • the width of the emitter segment electrode 20 and the base segment electrode 21 cannot exceed the width of the doped region in which it is located.
  • the slurry used for printing the emitter segment electrode 20 is a silver aluminum paste
  • the slurry used for printing the base segment electrode 21 is a silver paste.
  • the emitter wire electrodes 40 are laid one by one on the emitter segment electrodes 20, and the base wire electrodes 41 are laid one by one on the base segment electrodes 21.
  • One end of the emitter wire electrode 40 extends beyond the narrow strip back contact cell, while the base wire electrode 41 extends from the opposite direction out of the narrow strip back contact cell.
  • the emitter wire electrode 40 and the base wire electrode 41 extend from the edge of the strip-shaped back contact cell to a length of 0.5-5 mm.
  • the emitter wire electrode 40 and the base wire electrode 41 have a circular cross section and a diameter of 40-80 um; the cross-sectional shape of the emitter wire electrode 40 and the base wire electrode 41 may also be square or triangular, and the material thereof may be It can be copper wire, silver coated copper wire or tin-coated copper wire.
  • the narrow strip-shaped back contact battery is transferred into a belt sintering furnace for sintering, and the sintering peak temperature is 850-950 °C.
  • the back surface structure of the battery after completing this step is as shown in FIG.
  • Steps (1) to (3) and (5) are the same as those in Embodiment 1, and are not described herein again.
  • the solder paste is printed on the emitter segmented electrode 20 of the strip-shaped back contact battery after step 3 to form the emitter thermal conductive layer 30, and the solder paste is printed on the base segment electrode 21 to form a base.
  • the ink pattern of the solder paste may be circular or linear. Its width cannot exceed the width of the doped region in which it is located. It is necessary to make the over-emittered emitter-sensitive conductive layer 30 on the emitter segment electrode 20 and the over-primed base thermistor layer 31 on the base segment electrode 21 during printing.
  • the enlarged partial structure after printing is shown in Fig. 6.
  • the structure of the back surface of the battery after completion of this step is shown in Fig. 5.
  • the emitter metal wire electrodes 40 are laid one by one on the emitter heat-sensitive conductive layer 30 on the emitter segment electrode 20, and the base wire electrodes 41 are in one-to-one correspondence It is laid on the base thermal conductive layer 31 on the base segment electrode 21.
  • One end of the emitter wire electrode 40 extends beyond the narrow strip back contact cell, while the base wire electrode 41 extends from the opposite direction out of the narrow strip back contact cell.
  • the emitter wire electrode 40 and the base wire electrode 41 extend from the edge of the strip-shaped back contact cell to a length of 0.5-5 mm.
  • the emitter wire electrode 40 and the base wire electrode 41 have a circular cross section and a diameter of 40-80 um; the cross-sectional shape of the emitter wire electrode 40 and the base wire electrode 41 may also be square or triangular, and the material thereof may be It can be copper wire, silver coated copper wire or tin-coated copper wire.
  • the back contact solar cell is heated, so that the emitter wire electrode 40, the emitter thermistor conductive layer 30 and the emitter segment electrode 20 form an ohmic contact, and at the same time, the base wire electrode 41 and the base are provided.
  • the extremely thermally conductive layer 31 and the base segment electrode 21 form an ohmic contact.
  • the heating method is infrared heating, and the peak temperature of the reflow is 183-250 degrees.
  • the back surface structure of the battery after completing this step is shown in Fig. 9.
  • the embodiment further provides a solar cell module comprising a solar cell string, wherein the solar cell string is the above-mentioned back contact solar cell string.
  • the embodiment further provides a solar cell system including more than one solar cell module,
  • the solar cell module is the above-described solar cell module.

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Abstract

一种背接触太阳能电池串及其制备方法和组件、***，包括背接触太阳能电池和用于背接触太阳能电池电连接的导电件(50)，背接触太阳能电池的背表面设置了发射极p+区域(10)的发射极分段电极(20)和基极n+区域(11)基极分段电极(21)，发射极分段电极(20)上设置有发射极金属丝电极(40)，基极分段电极(21)上设置有基极金属丝电极(41)，发射极金属丝电极(40)和基极金属丝电极(41)反向延伸出电池片，背接触太阳能电池的发射极金属丝电极(40)与相邻背接触太阳能电池的基极金属丝电极(41)通过导电件(50)电连接。该太阳能电池串及制备方法和组件、***操作简单、无需高精度的对准焊接设备，减少了载流子在电极之间的横向传输损耗，提高了电池的填充因子，降低了组件的短路电流从而降低了组件封装损耗。

Description

一种背接触太阳能电池串及其制备方法和组件、*** 技术领域
本发明涉及太阳能电池技术领域，具体涉及一种背接触太阳能电池串及其制备方法和组件、***。
背景技术
太阳能电池是一种将光能转化为电能的半导体器件，较低的生产成本和较高的能量转化效率一直是太阳能电池工业追求的目标。对于目前常规太阳能电池，其发射极接触电极和基极接触电极分别位于电池片的正反两面。电池的正面为受光面，正面金属发射极接触电极的覆盖必将导致一部分入射的太阳光被金属电极所反射遮挡，造成一部分光学损失。普通单晶硅太阳能电池的正面金属电极的覆盖面积在7％左右，减少金属电极的正面覆盖可以直接提高电池的能量转化效率。窄条状背接触电池是一种将发射极和基极接触电极均放置在电池背面(非受光面)的电池，该电池的受光面无任何金属电极遮挡，从而有效增加了电池片的短路电流，使电池片的能量转化效率得到提高。
背接触结构的太阳能电池是目前太阳能工业化批量生产的晶硅太阳能电池中能量转化效率最高的一种电池，它的高转化效率、低组件封装成本，一直深受人们青睐。在以往的背接触太阳能电池制作工艺中，其金属化工艺大都采用流程较为复杂的电镀来实现，该方法在降低背接触电池的串联电阻、提高电池的开路电压确实有出色的表现，但是该方法工艺复杂，排放的废弃物严重污染环境，且与目前工业化生产的主流金属化方法不相兼容，因此不利于低成本的产业化推广。同时，在将背接触电池封装成组件的过程中，由于发射极和基极电极根数较多、线宽较窄，相邻电池之间的对准焊接非常困难。另一方面，在将电池封装成组件的过程中，功率的损失很大一部分来自焊接电阻和焊带电阻， 单片电池的短路电流越高，这部分功率损失就越大。
发明内容
本发明的目的在于针对现有技术的不足，提供一种转化效率高、组件损耗低、无需对准焊接、节约银浆成本的新型背接触太阳能电池串及其制备方法和组件、***。
本发明提供的背接触太阳能电池串，其技术方案是：
背接触太阳能电池串，包括背接触太阳能电池和用于背接触太阳能电池电连接的导电件，所述背接触太阳能电池的背表面包括相互交替排列的发射极p+区域和基极n+区域，其特征在于，所述背接触太阳能电池的背表面还包括设置在所述发射极p+区域的发射极分段电极，和设置在所述基极n+区域的基极分段电极，所述发射极分段电极上设置有发射极金属丝电极，所述基极分段电极上设置有基极金属丝电极，所述发射极金属丝电极和基极金属丝电极反向延伸出电池片，所述背接触太阳能电池的发射极金属丝电极与相邻背接触太阳能电池的基极金属丝电极通过导电件电连接。
其中，所述发射极分段电极上设置有发射极热敏导电层，所述基极分段电极上设置有基极热敏导电层，在所述发射极分段电极的发射极热敏导电层上一一对应的铺设发射极金属丝电极，在所述基极分段电极的基极热敏导电层上一一对应的铺设基极金属丝电极。
其中，所述热敏导电层是锡膏导电层。
其中，所述导电件涂覆有导电胶，所述导电件为金属材料。
其中，所述发射极分段电极和基极分段电极均由非连续的圆点组成，所述圆点的圆心在一条直线上；或，所述发射极分段电极和基极分段电极由非连续的线条组成；或，所述发射极分段电极和基极分段电极由非连续的圆点错位排列而成；且所述发射极分段电极和基极分段电极的宽度不能超过所述发射极和所述基极所在掺杂区域的宽度。
其中，所述背接触太阳能电池的电阻率为1-30Ω·cm，厚度为50-300μm， 所述背接触太阳能电池发射极p+区域和所述基极n+区域呈长条状相互交替地排列在电池背表面，发射极p+区域和基极n+区域还设置有钝化层，用于电池表面的钝化。
其中，所述发射极p+区域的宽度为200-3000μm，基极n+区域的宽度为100-2000μm。
其中，所述背接触太阳能电池是将电池片等间距切割后的窄条状背接触太阳能电池。
其中，所述发射极分段电极为银铝浆电极，所述基极分段电极为银浆电极，所述背接触太阳能电池是背接触N型单晶硅太阳能电池。
其中，所述发射极金属丝电极和基极金属丝电极延伸出背接触电池边缘的长度为0.5-5mm。
本发明还提供了一种背接触太阳能电池串的制备方法，包括以下步骤：
(1)、在太阳能电池基体的背表面形成相互交替排列的发射极p+区域和基极n+区域；
(2)、在所述发射极p+区域上印刷发射极分段电极，在所述基极n+区域上印刷基极分段电极；印刷完成后将背接触太阳能电池传送入带式烧结炉进行烧结；
(3)沿垂直于所述发射极p+区域和基极n+区域的排列方向将背接触太阳能电池切割成窄条状背接触电池；
(4)将发射极金属丝电极一一对应地铺设在所述发射极分段电极上，将基极金属丝电极一一对应地铺设在所述基极分段电极上，所述发射极金属丝电极的一端延伸出背接触电池之外，基极金属丝电极从相反的方向延伸出背接触电池之外；
(5)将所述窄条状背接触电池依次排列，在相邻电池交接处铺设导电件，使得相邻背接触太阳能电池的发射极金属丝电极和基极金属丝电极通过导电件和导电胶完成电连接，以形成太阳能电池串。
其中，在步骤(3)之后，步骤(4)之前，还包括步骤(3)’：
(3)’、在背接触太阳能电池的所述发射极分段电极上印刷发射极热敏导电层，在所述基极分段电极上印刷基极热敏导电层；
步骤(4)变为步骤(4)’：
(4)’、将发射极金属丝电极一一对应地铺设在所述发射极分段电极上的发射极热敏导电层上，将基极金属丝电极一一对应地铺设在所述基极分段电极上的基极热敏导电层上。
其中，在步骤(2)中，烧结峰值温度为850-950℃。
其中，所述发射极金属丝电极和基极金属丝电极延伸出背接触电池边缘的长度为0.5-5mm。
本发明还提供了一种太阳能电池组件，包括太阳能电池串，太阳能电池串为上述的背接触太阳能电池串。
本发明还提供了一种太阳能电池***，包括一个以上的太阳能电池组件，所述太阳能电池组件是上述的太阳能电池组件。
本发明的有益效果是：
本发明采用金属丝取代常规的银电极作为背接触电池的背面电极，节约了银浆成本，同时将发射极和基极金属丝电极反向延伸出电池片，相邻电池片的发射极金属丝电极和基极金属丝电极通过导电件完成电相连，从而实现背接触电池之间的串连，该方法操作简单、无需高精度的对准焊接设备，同时导电件还起到横向汇流的作用，减少了载流子在电极之间的横向传输损耗，提高了电池的填充因子；由于采用非整片的窄条状电池进行串连，降低了组件的短路电流从而显著地降低了组件封装损耗。
附图说明
图1为本发明实施例1和实施例2的背接触太阳能电池串的制备方法步骤一后的背表面结构示意图。
图2a、图2b和图2c为本发明实施例1和实施例2的背接触太阳能电池串的制备方法步骤二后的背表面结构示意图。
图3为本发明实施例1和实施例2的背接触太阳能电池串的制备方法步骤三中的激光切割方向示意图。
图4为本发明实施例1和实施例2的背接触太阳能电池串的制备方法步骤三后的背表面结构示意图。
图5为本发明实施例2的背接触太阳能电池串的制备方法步骤三’后的背表面结构示意图。
图6为本发明实施例2的背接触太阳能电池串的制备方法步骤三’后的背表面结构局部放大图。
图7为本发明实施例1的背接触太阳能电池串的制备方法步骤四后的背表面结构示意图。
图8为本发明实施例1的背接触太阳能电池串的制备方法步骤五中通过导电件串接后的背接触太阳能电池串示意图。
图9为本发明实施例2的背接触太阳能电池串的制备方法步骤四’后的背表面结构示意图。
图10为本发明实施例2的背接触太阳能电池串的制备方法步骤五中通过导电件串接后的背接触太阳能电池串示意图。
具体实施方式
下面将结合实施例以及附图对本发明加以详细说明，需要指出的是，所描述的实施例仅旨在便于对本发明的理解，而对其不起任何限定作用。
参见图7-10，本实施例提供的一种背接触太阳能电池串，包括背接触太阳能电池和用于背接触太阳能电池电连接的导电件，背接触太阳能电池的背表面包括相互交替排列的发射极p+区域10和基极n+区域11，发射极p+区域10上设置发射极分段电极20，基极n+区域11上设置基极分段电极21，发射极分段电极20上设置有发射极金属丝电极40，基极分段电极21上设置有基极金属丝 电极41；或者，发射极分段电极20上设置有发射极热敏导电层30，基极分段电极上21设置有基极热敏导电层31，在发射极分段电极20的发射极热敏导电层上30一一对应的铺设发射极金属丝电极40，在基极分段电极21的基极热敏导电层上31一一对应的铺设基极金属丝电极41；发射极金属丝电极40和基极金属丝电极41反向延伸出电池片，发射极金属丝电极40与相邻背接触太阳能电池的基极金属丝电极41通过导电件50电连接。完成后的电池背表面结构如图8、10所示。本实施例的背接触太阳能电池串节约了银浆成本，同时将发射极和基极金属丝电极反向延伸出电池片，相邻电池片的发射极金属丝电极和基极金属丝电极通过导电件完成电相连，从而实现背接触电池之间的串连，该方法操作简单、无需高精度的对准焊接设备，同时导电件还起到横向汇流的作用，减少了载流子在电极之间的横向传输损耗，提高了电池的填充因子。
优选地，热敏导电层是锡膏导电层。锡膏的过墨图案可以为圆形，也可以为线条状，其宽度不能超过其所在掺杂区域的宽度，印刷时务必使过墨后的发射极热敏导电层30位于发射极分段电极20上，以及使过墨后的基极热敏导电层31位于基极分段电极21上，如图5、6所示。
优选地，导电件50上涂覆有导电胶，导电件50的材料可以为铜或铝或其他导电材质。
优选地，背接触太阳能电池是6寸电池片等间距切割成的2-6片窄条状太阳能电池，太阳能电池的宽度为20-80mm，优选为26-78mm，长度为156-162mm.，由于采用非整片的窄条状电池进行串连，降低了组件的短路电流从而显著地降低了组件封装损耗。
优选地，发射极分段电极20和基极分段电极21均由非连续的圆点组成，这些圆点的圆心在一条直线上；或，由非连续的线条组成；或，由非连续的圆点错位排列而成；且发射极分段电极20和基极分段电极21的宽度不能超过发射极和基极所在掺杂区域的宽度。
优选地，背接触太阳能电池的前表面设置有钝化减反膜，背表面设置有钝 化膜。背接触太阳能电池的电阻率为1-30Ω·cm，厚度为50-300μm，每发射极p+区域10的宽度为200-3000μm，基极n+区域11的宽度为100-2000μm。发射极分段电极20为银铝浆电极，基极分段电极21为银浆电极，背接触太阳能电池是背接触N型单晶硅太阳能电池。发射极p+区域10和基极n+区域11呈长窄条状相间分布于太阳能电池基体上。发射极金属丝电极40的一端延伸出窄条状背接触电池之外，而基极金属丝电极41从相反的方向延伸出窄条状背接触电池之外。发射极金属丝电极40和基极金属丝电极41延伸出窄条状背接触电池边缘的长度为0.5-5mm。
实施例1：
本实施例的一种背接触太阳能电池串的制备方法，包括以下步骤：
(1)、制备发射极p+区域10和基极n+区域11相互交替排列在硅片背表面的背接触太阳能电池，本实施例选用N型单晶硅基体，电阻率为1-30Ω·cm，厚度为50-300μm，N型晶体硅基体使用前先经表面制绒处理，然后利用扩散或离子注入、掩膜、刻蚀等技术实现电池发射极p+区域10和基极n+区域11相互交替排列在电池背表面。再利用氧化硅，氮化硅和氧化铝等介质膜进行电池背表面的钝化和前表面的钝化及光学减反，从而形成所需要的发射极p+区域10和基极n+区域11相互交替排列在硅片背表面的太阳能电池，其中，每列发射极p+区域10的宽度为200-3000μm，基极n+区域11的宽度为100-2000μm。完成后的电池背表面结构如图1所示。
(2)、在发射极p+区域10上印刷发射极分段电极20，在基极n+区域11上印刷基极分段电极21。发射极分段电极20和基极分段电极21由非连续的圆点组成(如图2a)，这些圆点的圆心在一条直线上。发射极分段电极20和基极分段电极21还可以由非连续的线条组成(如图2b)，发射极分段电极20和基极分段电极21中的图案可以是有规则的阵列，也可以如图2c所示，发射极分段电极20和基极分段电极21由非连续的圆点错位排列而成。但发射极分段电极20和基极分段电极21的宽度不能超过其所在掺杂区域的宽度。
印刷发射极分段电极20所用浆料为银铝浆，印刷基极分段电极21所用浆料为银浆。
(3)、如图3，使用激光切片机将步骤(2)处理后的背接触太阳能电池三等分切割成三块156mm*52mm的窄条状背接触电池，切割方向垂直于发射极p+区域和基极n+区域的排列方向。亦可以将背接触太阳能电池进行2-6等分的切割。完成后的电池背表面结构如图4所示。
(4)、如图7，将发射极金属丝电极40一一对应地铺设在发射极分段电极20上，将基极金属丝电极41一一对应地铺设在基极分段电极21上。发射极金属丝电极40的一端延伸出窄条状背接触电池之外，而基极金属丝电极41从相反的方向延伸出窄条状背接触电池之外。发射极金属丝电极40和基极金属丝电极41延伸出窄条状背接触电池边缘的长度为0.5-5mm。发射极金属丝电极40和基极金属丝电极41的截面为圆形，其直径为40-80um；发射极金属丝电极40和基极金属丝电极41的截面形状亦可以方形或三角形，其材质可以为铜丝、银包铜丝或者锡包铜丝。铺设完成后将窄条状背接触电池传送入带式烧结炉进行烧结，烧结峰值温度为850-950℃。完成本步骤后的电池背表面结构如图7所示。
(5)、将多个步骤4后的窄条状背接触电池依次排列，然后在相邻电池交接处铺设导电件50，导电件50上涂覆有导电胶。铺设完成后相邻电池的发射极金属丝电极40和基极金属丝电极41通过导电件50和导电胶完成电连接(连接后的示意图如图8所示)。导电件50的材料可以为铜或铝或其他导电材质。至此，即完成本发明背接触太阳能电池串的制备。
实施例2：
本实施例的一种背接触太阳能电池串的制备方法，包括以下步骤：
步骤(1)～(3)、(5)与实施例1相同，此处不再赘述。
(3)’、在步骤3后的窄条状背接触电池的发射极分段电极20上印刷锡膏形成发射极热敏导电层30，在基极分段电极21上印刷锡膏形成基极热敏导电 层31。锡膏的过墨图案可以为圆形，也可以为线条状。其宽度不能超过其所在掺杂区域的宽度。印刷时务必使过墨后的发射极热敏导电层30位于发射极分段电极20上，以及使过墨后的基极热敏导电层31位于基极分段电极21上。印刷完成后的局部结构放大图如图6所示，完成本步骤后的电池背表面结构如图5所示。
(4)’、如图9，将发射极金属丝电极40一一对应地铺设在发射极分段电极20上的发射极热敏导电层30上，将基极金属丝电极41一一对应地铺设在基极分段电极21上的基极热敏导电层31上。发射极金属丝电极40的一端延伸出窄条状背接触电池之外，而基极金属丝电极41从相反的方向延伸出窄条状背接触电池之外。发射极金属丝电极40和基极金属丝电极41延伸出窄条状背接触电池边缘的长度为0.5-5mm。发射极金属丝电极40和基极金属丝电极41的截面为圆形，其直径为40-80um；发射极金属丝电极40和基极金属丝电极41的截面形状亦可以方形或三角形，其材质可以为铜丝、银包铜丝或者锡包铜丝。铺设完成后，对背接触太阳能电池进行加热，使得发射极金属丝电极40、发射极热敏导电层30和发射极分段电极20三者形成欧姆接触，同时使基极金属丝电极41、基极热敏导电层31和基极分段电极21三者形成欧姆接触。加热方式采用红外加热，回流峰值温度为183-250度。完成本步骤后的电池背表面结构如图9。
(5)、将多个步骤4’后的窄条状背接触电池依次排列，然后在相邻电池交接处铺设导电件50，导电件50上涂覆有导电胶。铺设完成后相邻电池的发射极金属丝电极40和基极金属丝电极41通过导电件50和导电胶完成电连接(连接后的示意图如图10)。导电件50的材料可以为铜或铝或其他导电材质。至此，即完成本发明背接触太阳能电池串的制备。
本实施例还提供了一种太阳能电池组件，包括太阳能电池串，太阳能电池串为上述的背接触太阳能电池串。
本实施例还提供了一种太阳能电池***，包括一个以上的太阳能电池组件， 太阳能电池组件是上述的太阳能电池组件。
最后应当说明的是，以上实施例仅用以说明本发明的技术方案，而非对本发明保护范围的限制，尽管参照较佳实施例对本发明作了详细地说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的实质和范围。

Claims (16)

  1. 一种背接触太阳能电池串，包括背接触太阳能电池和用于背接触太阳能电池电连接的导电件，所述背接触太阳能电池的背表面包括相互交替排列的发射极p+区域和基极n+区域，其特征在于，所述背接触太阳能电池的背表面还包括设置在所述发射极p+区域的发射极分段电极和设置在所述基极n+区域的基极分段电极，所述发射极分段电极上设置有发射极金属丝电极，所述基极分段电极上设置有基极金属丝电极，所述发射极金属丝电极和基极金属丝电极反向延伸出电池片，所述背接触太阳能电池的发射极金属丝电极与相邻背接触太阳能电池的基极金属丝电极通过导电件电连接。
  2. 根据权利要求1所述的一种背接触太阳能电池串，其特征在于：所述发射极分段电极上设置有发射极热敏导电层，所述基极分段电极上设置有基极热敏导电层，在所述发射极分段电极的发射极热敏导电层上一一对应的铺设发射极金属丝电极，在所述基极分段电极的基极热敏导电层上一一对应的铺设基极金属丝电极。
  3. 根据权利要求2所述的一种背接触太阳能电池串，其特征在于：所述热敏导电层是锡膏导电层。
  4. 根据权利要求1所述的一种背接触太阳能电池串，其特征在于：所述导电件涂覆有导电胶，所述导电件为金属材料。
  5. 根据权利要求1所述的一种背接触太阳能电池串，其特征在于：所述发射极分段电极和基极分段电极均由非连续的圆点组成，所述圆点的圆心在一条直线上；或，所述发射极分段电极和基极分段电极由非连续的线条组成；或，所述发射极分段电极和基极分段电极由非连续的圆点错位排列而成；且所述发射极分段电极和基极分段电极的宽度不能超过所述发射极和所述基极所在掺杂区域的宽度。
  6. 根据权利要求1所述的一种背接触太阳能电池串，其特征在于：所述背接触太阳能电池的电阻率为1-30Ω·cm，厚度为50-300μm，所述背接触太阳能 电池发射极p+区域和所述基极n+区域呈长条状相互交替地排列在电池背表面，发射极p+区域和基极n+区域还设置有钝化层，用于电池表面的钝化。
  7. 根据权利要求1所述的一种背接触太阳能电池串，其特征在于：所述发射极p+区域的宽度为200-3000μm，基极n+区域的宽度为100-2000μm。
  8. 根据权利要求1所述的一种背接触太阳能电池串，其特征在于：所述背接触太阳能电池是将电池片等间距切割后的窄条状背接触太阳能电池。
  9. 根据权利要求1所述的一种背接触太阳能电池串，其特征在于：所述发射极分段电极为银铝浆电极，所述基极分段电极为银浆电极，所述背接触太阳能电池是背接触N型单晶硅太阳能电池。
  10. 根据权利要求1-9任一所述的一种背接触太阳能电池串，其特征在于：所述发射极金属丝电极和基极金属丝电极延伸出背接触电池边缘的长度为0.5-5mm。
  11. 一种背接触太阳能电池串的制备方法，其特征在于：包括以下步骤：
    (1)、在太阳能电池基体的背表面形成相互交替排列的发射极p+区域和基极n+区域；
    (2)、在所述发射极p+区域上印刷发射极分段电极，在所述基极n+区域上印刷基极分段电极；印刷完成后将背接触太阳能电池传送入带式烧结炉进行烧结；
    (3)沿垂直于所述发射极p+区域和基极n+区域的排列方向将背接触太阳能电池切割成窄条状背接触电池；
    (4)将发射极金属丝电极一一对应地铺设在所述发射极分段电极上，将基极金属丝电极一一对应地铺设在所述基极分段电极上，所述发射极金属丝电极的一端延伸出背接触电池之外，所述基极金属丝电极从相反的方向延伸出背接触电池之外；
    (5)将所述窄条状背接触电池依次排列，在相邻电池交接处铺设导电件，使得相邻背接触太阳能电池的发射极金属丝电极和基极金属丝电极通过导电件 和导电胶完成电连接，以形成太阳能电池串。
  12. 根据权利要求11所述的一种背接触太阳能电池串的制备方法，其特征在于：在步骤(3)之后，步骤(4)之前，还包括步骤(3)’：
    (3)’、在背接触太阳能电池的所述发射极分段电极上印刷发射极热敏导电层，在所述基极分段电极上印刷基极热敏导电层；
    步骤(4)变为步骤(4)’：
    (4)’、将发射极金属丝电极一一对应地铺设在所述发射极分段电极上的发射极热敏导电层上，将基极金属丝电极一一对应地铺设在所述基极分段电极上的基极热敏导电层上。
  13. 根据权利要求11所述的一种背接触太阳能电池串的制备方法，其特征在于：在步骤(2)中，烧结峰值温度为850-950℃。
  14. 根据权利要求11所述的一种背接触太阳能电池串的制备方法，其特征在于：所述发射极金属丝电极和基极金属丝电极延伸出背接触电池边缘的长度为0.5-5mm。
  15. 一种太阳能电池组件，包括太阳能电池串，其特征在于，所述太阳能电池串为权利要求1-10任一项所述的背接触太阳能电池串。
  16. 一种太阳能电池***，包括一个以上的太阳能电池组件，其特征在于：所述太阳能电池组件是权利要求15所述的太阳能电池组件。
PCT/CN2017/000515 2017-02-24 2017-08-10 一种背接触太阳能电池串及其制备方法和组件、*** WO2018152659A1 (zh)

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