WO2018139279A1 - 固体撮像素子、および電子機器 - Google Patents
固体撮像素子、および電子機器 Download PDFInfo
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- WO2018139279A1 WO2018139279A1 PCT/JP2018/001088 JP2018001088W WO2018139279A1 WO 2018139279 A1 WO2018139279 A1 WO 2018139279A1 JP 2018001088 W JP2018001088 W JP 2018001088W WO 2018139279 A1 WO2018139279 A1 WO 2018139279A1
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- 238000000926 separation method Methods 0.000 claims abstract description 151
- 238000006243 chemical reaction Methods 0.000 claims abstract description 63
- 238000003384 imaging method Methods 0.000 claims description 120
- 239000000758 substrate Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 abstract description 36
- 238000012545 processing Methods 0.000 description 28
- 238000001514 detection method Methods 0.000 description 23
- 238000012986 modification Methods 0.000 description 23
- 230000004048 modification Effects 0.000 description 23
- 238000000034 method Methods 0.000 description 16
- 238000001727 in vivo Methods 0.000 description 15
- 239000002775 capsule Substances 0.000 description 13
- 230000035945 sensitivity Effects 0.000 description 11
- 238000004891 communication Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000012937 correction Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002674 endoscopic surgery Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 210000000936 intestine Anatomy 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002572 peristaltic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
- H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
Definitions
- the present technology relates to a solid-state imaging device and an electronic device.
- the solid-state imaging element is capable of suppressing color mixing between pixels, improving light receiving sensitivity in each pixel, and further increasing a signal charge amount Qs that can be accumulated in each pixel.
- the present invention relates to an image sensor and an electronic device.
- the present technology has been made in view of such circumstances, and in addition to the effects obtained by the above-described conventional technology, the signal charge amount Qs of each pixel can be increased.
- the solid-state imaging device includes a photoelectric conversion unit formed for each pixel, and an inter-pixel separation unit that separates the photoelectric conversion unit of each pixel. And a protruding portion having a shape protruding toward the photoelectric conversion portion.
- the solid-state imaging device may further include a region having a conductivity type different from that of the photoelectric conversion unit between the inter-pixel separation unit and the photoelectric conversion unit.
- the inter-pixel separation portion can be formed from at least one of a material having a lower refractive index than the photoelectric conversion portion and a material that reflects light.
- the inter-pixel separation portion may be a DTI formed from the light incident surface side with respect to the substrate.
- the inter-pixel separation portion may be a DTI formed from the surface facing the light incident surface with respect to the substrate.
- the inter-pixel separating unit can be formed in a lattice shape so as to separate the photoelectric conversion unit for each pixel.
- the length in the depth direction of the inter-pixel separation portion can be made different between the protrusion and the grid-like side.
- the protrusions of the inter-pixel separation unit can be changed according to the color of the pixel.
- the projections of the inter-pixel separation unit can be changed in length according to the color of the pixel.
- the width of the protrusions of the inter-pixel separation unit can be changed according to the color of the pixel.
- the number of the protrusions included in the inter-pixel separation unit can be changed according to the color of the pixel.
- the projections of the inter-pixel separation unit can be changed according to the shared pixel pattern.
- the length of the protrusions of the inter-pixel separation unit can be changed according to the pattern of the shared pixel.
- the width of the protrusions of the inter-pixel separation unit can be changed according to the pattern of the shared pixel.
- the number of the protrusions included in the inter-pixel separation unit can be changed according to the pattern of the shared pixel.
- the projections of the inter-pixel separation unit can be changed according to the distance from the optical center to the pixel.
- the inter-pixel separating portion including the protruding portion may not have an orthogonal portion between the horizontal direction portion and the vertical direction portion.
- the grid-like sides of the inter-pixel separation unit can be linear.
- the grid-like sides of the inter-pixel separation unit can be formed in a zigzag shape.
- the grid-like side of the inter-pixel separation unit can be a triangular wave shape.
- the grid-like sides of the inter-pixel separation unit can be formed in a semi-continuous shape.
- the lattice-like sides of the inter-pixel separation unit can be formed in a semi-rectangular shape.
- the inter-pixel separation portion can be formed from a well region having a conductivity type different from that of the photoelectric conversion portion.
- a solid-state imaging device as a second aspect of the present technology includes a photoelectric conversion unit formed for each pixel, a lattice-shaped inter-pixel separation unit that separates the photoelectric conversion unit of each pixel, and the photoelectric conversion unit. It is provided with the formed columnar protrusion.
- the solid-state imaging device may further include a well region having a conductivity type different from that of the photoelectric conversion unit between the inter-pixel separation unit and the protrusion and the photoelectric conversion unit.
- the protrusion can be formed from at least one of a material having a refractive index lower than that of the photoelectric conversion portion and a material that reflects light.
- the protrusion may be a DTI formed from the light incident surface side with respect to the substrate, and the inter-pixel separation portion is a DTI formed from the surface side facing the light incident surface with respect to the substrate. It can be.
- the protrusion may be a columnar shape.
- the protrusion may be a polygonal column.
- the solid-state image sensor can be a back-illuminated type.
- An electronic apparatus is an electronic apparatus in which a solid-state image sensor is mounted.
- the solid-state image sensor includes a photoelectric conversion unit formed for each pixel, and the photoelectric conversion unit of each pixel. And an inter-pixel separation unit that separates, and the inter-pixel separation unit has a protrusion having a shape protruding toward the photoelectric conversion unit.
- the electronic device is an electronic device in which a solid-state image sensor is mounted.
- the solid-state image sensor includes a photoelectric conversion unit formed for each pixel, and the photoelectric conversion unit of each pixel.
- a grid-like inter-pixel separation part to be separated and a columnar protrusion formed in the photoelectric conversion part are provided.
- the light receiving sensitivity of each pixel can be increased and the signal charge amount Qs can be increased.
- FIG. 1 shows a horizontal cross section in the vicinity of the center of the Si substrate in the first configuration example.
- 2A is a vertical sectional view taken along line XX ′ in FIG. 1
- FIG. 2B is a vertical sectional view taken along line YY ′ in FIG.
- a lattice-shaped inter-pixel separation portion 11 is formed by a P-type well region so as to surround each pixel with a rectangle.
- a PD 12 composed of an N-type region having conductivity different from that of the inter-pixel separation portion 11 (P-type well region) is formed.
- a protruding portion 11 a protruding from the center of each side of the rectangle with respect to the PD 12 is formed. Note that the length in the depth direction of the inter-pixel separation portion 11 is different between the lattice-like side and the protrusion 11a, and the lattice-like side is longer (deeper). However, the protrusion 11a may be formed to be longer (deeper), or the length (depth) of both may be aligned.
- the first configuration example is a back-illuminated type as shown in FIG. 2, and an OCL (on-chip lens) 14 and a CF (color filter) 15 are formed on the Si substrate 10 on the incident surface side.
- a pixel Tr (transistor) 18 and a wiring layer 19 are formed on the opposite side of the incident surface of the Si substrate 10.
- An inter-CF light shielding portion 16 is formed between the CFs 15 of each pixel.
- STI Shallow Trench Isolation
- the first configuration example since the projection 11a is formed in the inter-pixel separation portion 11, the P-type well is compared with the case where there is no projection 11a and the inter-pixel separation portion 11 is a simple rectangle.
- the surface area of the PN junction portion 13 where the inter-pixel separation portion 11 composed of the region and the PD 12 composed of the N-type region contact each other increases. Since the PN junction portion 13 plays a role of accumulating signal charges, the first configuration example can increase the signal charge amount Qs of each pixel by increasing the surface area of the PN junction portion 13.
- the first configuration example does not form a DTI (Deep Trench. Isolation), which will be described later, and can be manufactured by the same process as a conventional solid-state imaging device.
- DTI Deep Trench. Isolation
- FIG. 3 shows a horizontal cross section near the center of the Si substrate of the second configuration example.
- FIG. 4 is a vertical sectional view taken along line XX ′ in FIG.
- the description is abbreviate
- the same shape as the inter-pixel separation portion 11 of the first configuration example, that is, a lattice-like inter-pixel separation portion 21 having a protrusion is formed as a DTI.
- the method for forming the inter-pixel separation portion 21 as the DTI in the second configuration example is not particularly mentioned, and any method can be used.
- the lattice-shaped inter-pixel separation portion 21 having the protrusions 21a is formed as the DTI.
- the inter-pixel separating unit 21 is formed from a single film layer or a laminated film of AlO, HfO, SiO 2 , W, poly-Si, or the like, for example.
- the PD 12 is formed in a region surrounded by the inter-pixel separation unit 21.
- a P-type well region 22 is formed between the inter-pixel separator 21 and the PD 12.
- the condensing by the OCL 14 is narrowed at the interface 31 of the Si substrate 10 so that the condensing spot enters the inside of the substrate.
- the incident light hits the side wall in the deep part of the Si substrate 10, so that the incident light hits the side wall 32 of the inter-pixel separation part 21 having a low refractive index after passing through the inside of the Si substrate 10 having a relatively high refractive index. . Therefore, compared to the case where the Si substrate 10 hits the side wall at the shallow portion, leakage of incident light to adjacent pixels can be suppressed, and color mixing can be suppressed.
- the PN junction portion of the PN junction portion is formed as in the first configuration example. Increases surface area. Therefore, also in the second configuration example, the signal charge amount Qs of each pixel can be increased.
- the inter-pixel separation unit 21 including the projecting part 21a can increase the area of the side wall in the pixel where the incident light hits, compared to the case where the projecting part 21a is not provided. Furthermore, since incident light can be reflected in the horizontal direction, the optical path length in the PD 12 can be increased. Therefore, the light receiving sensitivity of the PD 12 can be increased.
- the DTI in the second configuration example is limited to Reverse-DTI (hereinafter referred to as R-DTI).
- FIG. 5A is a horizontal sectional view showing a diffusion layer separation structure near the center of the Si substrate of the third configuration example
- FIG. B is a horizontal sectional view of the Tr surface of the Si substrate of the third configuration example
- FIG. 6C is a vertical sectional view taken along line XX ′ in FIG. A
- FIG. D is a vertical sectional view taken along line YY ′ in FIG.
- symbol is attached
- an inter-pixel separation unit 41 having the same shape as the inter-pixel separation unit 11 of the first configuration example is provided with a Reverse- filled with an insulating material from the incident surface side facing the Tr surface. Formed as DTI.
- the inter-pixel separation unit 41 as the R-DTI is formed from a single film layer or a stacked film of AlO, HfO, SiO 2 , W, poly-Si, or the like, for example.
- a projection 41 a that protrudes from the center of each side of the rectangle with respect to the PD 12 is formed of the same material as the inter-pixel separation portion 41.
- the PD 12 is formed in a region surrounded by the inter-pixel separation portion 41.
- a P-type well region 42 is formed between the inter-pixel separator 41 and the PD 12.
- the surface area of the PN junction portion increases. Therefore, also in the third configuration example, the signal charge amount Qs of each pixel can be increased.
- the area of the side wall in the pixel to which the incident light hits can be increased, and the incident light can also be reflected in the horizontal direction. Therefore, the optical path length in the PD 12 can be increased. Therefore, the light receiving sensitivity of the PD 12 can be increased.
- the inter-pixel separation portion 41 as R-DTI is formed in combination with a film that causes polarization such as AlO 3 or HfO 2, and the interface between R-DTI and PD 12 is in a hole accumulation state. Then, it becomes possible to suppress the white spot dark current.
- FIG. 4A is a horizontal sectional view of the Tr surface of the Si substrate of the fourth structural example
- FIG. 4B is a vertical sectional view taken along line XX ′ of FIG.
- FIG. 8 shows a cross-sectional view in the vertical direction along line segment YY ′.
- symbol is attached
- an inter-pixel separation unit 51 having the same shape as the inter-pixel separation unit 11 in the first configuration example is formed by a front-DTI (hereinafter referred to as an insulating material) filled with an insulating material from the Tr surface side by a FEOL process. , Called F-DTI).
- FIG. 7 shows a side wall cross section of the inter-pixel separation unit 51 as F-DTI.
- a P-type region 52 is formed by isotropically diffusing P-type impurities using plasma doping, solid phase diffusion, vapor phase diffusion, or the like on the side wall of the inter-pixel separation portion 51 as F-DTI. .
- the signal charge amount Qs can be effectively increased without reducing the N-type region of the PD 12.
- the inter-pixel separation unit 51 as the F-DTI is formed from a single film layer or a stacked film of AlO, HfO, SiO 2 , W, poly-Si, or the like, for example.
- a protrusion 51 a that protrudes from the center of each side of the rectangle with respect to the PD 12 is formed of the same material as the inter-pixel separation portion 51.
- the PD 12 is formed up to the deep part of the region surrounded by the inter-pixel separation unit 51, and the PD 12 and the pixel Tr 18 are vertically stacked.
- a P-type region 53 is formed in a region where the pixel Tr gate is separated from the PD 12.
- the surface area of the PN junction portion is increased. Therefore, also in the fourth configuration example, the signal charge amount Qs of each pixel can be increased.
- the area of the side wall in the pixel to which the incident light hits can be increased, and the incident light can also be reflected in the horizontal direction. Therefore, the optical path length in the PD 12 can be increased. Therefore, the light receiving sensitivity of the PD 12 can be increased.
- FIG. 6A is a horizontal sectional view of the Tr surface of the Si substrate of the fifth structural example
- FIG. 6B is a vertical sectional view taken along line XX ′ of FIG. A
- FIG. 6D is a vertical sectional view taken along line YY ′
- FIG. D shows a horizontal sectional view on the incident surface side.
- symbol is attached
- a lattice-shaped inter-pixel separation unit is provided so as to surround each pixel with a rectangle.
- 61 is formed.
- An N-type region PD 12 is formed in a region surrounded by the lattice-shaped inter-pixel separation portion 61.
- a P-type well region 62 is formed between the inter-pixel separator 61 and the PD 12.
- a columnar protrusion 63 is provided as R-DTI formed from the incident surface side.
- FIG. 9 shows a cross-sectional view of the columnar protrusion 63 as R-DTI.
- the columnar protrusion 63 is formed by laminating a film of SiO 2 and Al 3 O 2 having a refractive index lower than that of the N-type region forming the PD 12.
- a P-type well region 62 is formed between the columnar protrusion 63 and the PD 12.
- the columnar protrusions 63 By forming the columnar protrusions 63 as R-DTI, the columnar protrusions 63 and the pixels Tr18 can be arranged to overlap in the vertical direction.
- the cross-sectional shape of the columnar protrusion 63 is circular, but the cross-sectional shape of the columnar protrusion 63 may be an ellipse or a polygon more than a triangle. In the case of FIG. D, eight columnar protrusions 63 are formed per pixel, but the number of columnar protrusions 63 per pixel may be 1 or 2 or more.
- the PD12 is formed so as to sandwich the P-type well region 62 between the columnar protrusions 63 and the PD 12 without contacting each other. Thereby, since the surface area of the PN junction portion can be gained, the signal charge amount Qs of each pixel can be increased.
- the columnar protrusion 63 by providing the columnar protrusion 63, it is possible to increase the incident light in the pixel and increase the optical path length in the PD 12. Therefore, the light receiving sensitivity of the PD 12 can be increased. Furthermore, since the surface area of the PN junction portion can be increased by providing the columnar protrusions 63, the signal charge amount Qs of each pixel can be increased.
- FIG. 10 shows a first modification of the pixel separation portion having a protrusion.
- the number of protrusions is changed according to the color of the pixel (or its color filter).
- the B pixel has no protrusion
- the G pixel has four protrusions
- the R pixel has eight protrusions.
- the absorption coefficient of each wavelength of R, G, and B in Si is the lowest in R and B is the best. Therefore, the light receiving sensitivity of R in PD 12 can be increased by increasing the number of protrusions in R pixels.
- the length, thickness, position, and the like may be changed in addition to changing the number of protrusions according to the color of the pixel.
- FIG. 11 shows a second modification of the pixel separation portion having a protrusion.
- the number of protrusions is changed on the vertical and horizontal sides of the lattice-shaped inter-pixel separation portion.
- two protrusions are formed on the vertical side of each pixel, and one protrusion is formed on the horizontal side.
- the method of combining the numbers of protrusions on the vertical and horizontal sides of each pixel is not limited to the example shown in the figure.
- FIG. 12 shows a third modification of the pixel separation unit having a protrusion.
- the protruding portion on the side opposite to the optical center is lengthened or the center position of the protruding portion is shifted according to the distance of each pixel from the optical center.
- FIG. 13 shows a fourth modification of the pixel separation portion having a protrusion.
- the number of protrusions is changed by the sides of the lattice-shaped inter-pixel separation portion.
- FIG. 14 shows a fifth modification of the pixel separation portion having a protrusion.
- the fifth modification is formed so that the horizontal direction portion and the vertical direction portion of the inter-pixel separation portion and the projection portion are not orthogonal to each other.
- FIG. 15 shows a sixth modification of the pixel separation unit.
- the sides of the inter-pixel separation portion are formed not in a straight line but in a zigzag shape with a triangular wave shape.
- the sides of the inter-pixel separation part are formed in a wave shape.
- the shape of the side of the inter-pixel separation portion may be formed in a shape in which semicircles and semirectangles are continuous in addition to the triangular wave shape.
- FIG. 16 shows a seventh modification of the pixel separation portion having a protrusion.
- the shape of the protrusion is a triangle.
- the shape of the protrusion may be a semicircle or a polygon other than a triangle.
- the technology according to the present disclosure can be applied to various products.
- the technology according to the present disclosure may be applied to an endoscopic surgery system.
- FIG. 17 is a block diagram illustrating an example of a schematic configuration of a patient in-vivo information acquisition system using a capsule endoscope to which the technology (present technology) according to the present disclosure can be applied.
- the in-vivo information acquisition system 10001 includes a capsule endoscope 10100 and an external control device 10200.
- the capsule endoscope 10100 is swallowed by the patient at the time of examination.
- the capsule endoscope 10100 has an imaging function and a wireless communication function, and moves inside the organ such as the stomach and the intestine by peristaltic motion or the like until it is spontaneously discharged from the patient.
- Images (hereinafter also referred to as in-vivo images) are sequentially captured at predetermined intervals, and information about the in-vivo images is sequentially wirelessly transmitted to the external control device 10200 outside the body.
- the external control device 10200 comprehensively controls the operation of the in-vivo information acquisition system 10001. Further, the external control device 10200 receives information about the in-vivo image transmitted from the capsule endoscope 10100 and, based on the received information about the in-vivo image, displays the in-vivo image on the display device (not shown). The image data for displaying is generated.
- an in-vivo image obtained by imaging the inside of the patient's body can be obtained at any time in this manner until the capsule endoscope 10100 is swallowed and discharged.
- the capsule endoscope 10100 includes a capsule-type casing 10101.
- a light source unit 10111 In the casing 10101, a light source unit 10111, an imaging unit 10112, an image processing unit 10113, a wireless communication unit 10114, a power supply unit 10115, and a power supply unit 10116 and the control unit 10117 are stored.
- the light source unit 10111 includes a light source such as an LED (light-emitting diode), and irradiates the imaging field of the imaging unit 10112 with light.
- a light source such as an LED (light-emitting diode)
- the image capturing unit 10112 includes an image sensor and an optical system including a plurality of lenses provided in front of the image sensor. Reflected light (hereinafter referred to as observation light) of light irradiated on the body tissue to be observed is collected by the optical system and enters the image sensor. In the imaging unit 10112, in the imaging element, the observation light incident thereon is photoelectrically converted, and an image signal corresponding to the observation light is generated. The image signal generated by the imaging unit 10112 is provided to the image processing unit 10113.
- the image processing unit 10113 is configured by a processor such as a CPU (Central Processing Unit) or a GPU (Graphics Processing Unit), and performs various types of signal processing on the image signal generated by the imaging unit 10112.
- the image processing unit 10113 provides the radio communication unit 10114 with the image signal subjected to signal processing as RAW data.
- the wireless communication unit 10114 performs predetermined processing such as modulation processing on the image signal that has been subjected to signal processing by the image processing unit 10113, and transmits the image signal to the external control apparatus 10200 via the antenna 10114A.
- the wireless communication unit 10114 receives a control signal related to drive control of the capsule endoscope 10100 from the external control device 10200 via the antenna antenna 10114A.
- the wireless communication unit 10114 provides a control signal received from the external control device 10200 to the control unit 10117.
- the power feeding unit 10115 includes a power receiving antenna coil, a power regeneration circuit that regenerates power from a current generated in the antenna coil, a booster circuit, and the like. In the power feeding unit 10115, electric power is generated using a so-called non-contact charging principle.
- the power supply unit 10116 is composed of a secondary battery, and stores the electric power generated by the power supply unit 10115.
- FIG. 17 in order to avoid complication of the drawing, illustration of an arrow or the like indicating a power supply destination from the power supply unit 10116 is omitted.
- the imaging unit 10112, the image processing unit 10113, the wireless communication unit 10114, and the control unit 10117 can be used for driving them.
- the control unit 10117 includes a processor such as a CPU, and a control signal transmitted from the external control device 10200 to drive the light source unit 10111, the imaging unit 10112, the image processing unit 10113, the wireless communication unit 10114, and the power feeding unit 10115. Control accordingly.
- a processor such as a CPU
- the external control device 10200 is constituted by a CPU, a processor such as a GPU, or a microcomputer or a control board in which a processor and a storage element such as a memory are mounted.
- the external control device 10200 controls the operation of the capsule endoscope 10100 by transmitting a control signal to the control unit 10117 of the capsule endoscope 10100 via the antenna 10200A.
- the capsule endoscope 10100 for example, the light irradiation condition for the observation target in the light source unit 10111 can be changed by a control signal from the external control device 10200.
- an imaging condition for example, a frame rate or an exposure value in the imaging unit 10112
- the contents of processing in the image processing unit 10113 and the conditions (for example, the transmission interval, the number of transmission images, etc.) by which the wireless communication unit 10114 transmits an image signal may be changed by a control signal from the external control device 10200. .
- the external control device 10200 performs various image processing on the image signal transmitted from the capsule endoscope 10100, and generates image data for displaying the captured in-vivo image on the display device.
- the image processing includes, for example, development processing (demosaic processing), image quality enhancement processing (band enhancement processing, super-resolution processing, NR (Noise reduction) processing and / or camera shake correction processing, etc.), and / or enlargement processing ( Various signal processing such as electronic zoom processing can be performed.
- the external control device 10200 controls driving of the display device to display an in-vivo image captured based on the generated image data. Alternatively, the external control device 10200 may cause the generated image data to be recorded on a recording device (not shown) or may be printed out on a printing device (not shown).
- the technology according to the present disclosure can be applied to various products.
- the technology according to the present disclosure is realized as a device that is mounted on any type of mobile body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, and a robot. May be.
- FIG. 18 is a block diagram illustrating a schematic configuration example of a vehicle control system that is an example of a mobile control system to which the technology according to the present disclosure can be applied.
- the vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001.
- the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, a vehicle exterior information detection unit 12030, a vehicle interior information detection unit 12040, and an integrated control unit 12050.
- a microcomputer 12051, a sound image output unit 12052, and an in-vehicle network I / F (Interface) 12053 are illustrated as a functional configuration of the integrated control unit 12050.
- the drive system control unit 12010 controls the operation of the device related to the drive system of the vehicle according to various programs.
- the drive system control unit 12010 includes a driving force generator for generating a driving force of a vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism that adjusts and a braking device that generates a braking force of the vehicle.
- the body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs.
- the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as a headlamp, a back lamp, a brake lamp, a blinker, or a fog lamp.
- the body control unit 12020 can be input with radio waves transmitted from a portable device that substitutes for a key or signals from various switches.
- the body system control unit 12020 receives input of these radio waves or signals, and controls a door lock device, a power window device, a lamp, and the like of the vehicle.
- the vehicle outside information detection unit 12030 detects information outside the vehicle on which the vehicle control system 12000 is mounted.
- the imaging unit 12031 is connected to the vehicle exterior information detection unit 12030.
- the vehicle exterior information detection unit 12030 causes the imaging unit 12031 to capture an image outside the vehicle and receives the captured image.
- the vehicle outside information detection unit 12030 may perform an object detection process or a distance detection process such as a person, a car, an obstacle, a sign, or a character on a road surface based on the received image.
- the imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of received light.
- the imaging unit 12031 can output an electrical signal as an image, or can output it as distance measurement information. Further, the light received by the imaging unit 12031 may be visible light or invisible light such as infrared rays.
- the vehicle interior information detection unit 12040 detects vehicle interior information.
- a driver state detection unit 12041 that detects a driver's state is connected to the in-vehicle information detection unit 12040.
- the driver state detection unit 12041 includes, for example, a camera that images the driver, and the vehicle interior information detection unit 12040 determines the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated or it may be determined whether the driver is asleep.
- the microcomputer 12051 calculates a control target value of the driving force generator, the steering mechanism, or the braking device based on the information inside / outside the vehicle acquired by the vehicle outside information detection unit 12030 or the vehicle interior information detection unit 12040, and the drive system control unit A control command can be output to 12010.
- the microcomputer 12051 realizes ADAS (Advanced Driver Assistance System) functions including vehicle collision avoidance or impact mitigation, following traveling based on inter-vehicle distance, vehicle speed maintenance traveling, vehicle collision warning, or vehicle lane departure warning. It is possible to perform cooperative control for the purpose.
- ADAS Advanced Driver Assistance System
- the microcomputer 12051 controls the driving force generator, the steering mechanism, the braking device, and the like based on the information around the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040. It is possible to perform cooperative control for the purpose of automatic driving that autonomously travels without depending on the operation.
- the microcomputer 12051 can output a control command to the body system control unit 12020 based on information outside the vehicle acquired by the vehicle outside information detection unit 12030.
- the microcomputer 12051 controls the headlamp according to the position of the preceding vehicle or the oncoming vehicle detected by the outside information detection unit 12030, and performs cooperative control for the purpose of anti-glare, such as switching from a high beam to a low beam. It can be carried out.
- the sound image output unit 12052 transmits an output signal of at least one of sound and image to an output device capable of visually or audibly notifying information to a vehicle occupant or the outside of the vehicle.
- an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are illustrated as output devices.
- the display unit 12062 may include at least one of an on-board display and a head-up display, for example.
- FIG. 19 is a diagram illustrating an example of an installation position of the imaging unit 12031.
- the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.
- the imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as a front nose, a side mirror, a rear bumper, a back door, and an upper part of a windshield in the vehicle interior of the vehicle 12100.
- the imaging unit 12101 provided in the front nose and the imaging unit 12105 provided in the upper part of the windshield in the vehicle interior mainly acquire an image in front of the vehicle 12100.
- the imaging units 12102 and 12103 provided in the side mirror mainly acquire an image of the side of the vehicle 12100.
- the imaging unit 12104 provided in the rear bumper or the back door mainly acquires an image behind the vehicle 12100.
- the imaging unit 12105 provided on the upper part of the windshield in the passenger compartment is mainly used for detecting a preceding vehicle or a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.
- FIG. 19 shows an example of the shooting range of the imaging units 12101 to 12104.
- the imaging range 12111 indicates the imaging range of the imaging unit 12101 provided in the front nose
- the imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided in the side mirrors, respectively
- the imaging range 12114 The imaging range of the imaging part 12104 provided in the rear bumper or the back door is shown. For example, by superimposing the image data captured by the imaging units 12101 to 12104, an overhead image when the vehicle 12100 is viewed from above is obtained.
- At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information.
- at least one of the imaging units 12101 to 12104 may be a stereo camera including a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.
- the microcomputer 12051 based on the distance information obtained from the imaging units 12101 to 12104, the distance to each three-dimensional object in the imaging range 12111 to 12114 and the temporal change in this distance (relative speed with respect to the vehicle 12100).
- a solid object that travels at a predetermined speed (for example, 0 km / h or more) in the same direction as the vehicle 12100, particularly the closest three-dimensional object on the traveling path of the vehicle 12100. it can.
- the microcomputer 12051 can set an inter-vehicle distance to be secured in advance before the preceding vehicle, and can perform automatic brake control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like.
- automatic brake control including follow-up stop control
- automatic acceleration control including follow-up start control
- cooperative control for the purpose of autonomous driving or the like autonomously traveling without depending on the operation of the driver can be performed.
- the microcomputer 12051 converts the three-dimensional object data related to the three-dimensional object to other three-dimensional objects such as a two-wheeled vehicle, a normal vehicle, a large vehicle, a pedestrian, and a utility pole based on the distance information obtained from the imaging units 12101 to 12104. It can be classified and extracted and used for automatic avoidance of obstacles.
- the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see.
- the microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 12051 is connected via the audio speaker 12061 or the display unit 12062. By outputting an alarm to the driver and performing forced deceleration or avoidance steering via the drive system control unit 12010, driving assistance for collision avoidance can be performed.
- At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays.
- the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the captured images of the imaging units 12101 to 12104. Such pedestrian recognition is, for example, whether or not the user is a pedestrian by performing a pattern matching process on a sequence of feature points indicating the outline of an object and a procedure for extracting feature points in the captured images of the imaging units 12101 to 12104 as infrared cameras. It is carried out by the procedure for determining.
- the audio image output unit 12052 When the microcomputer 12051 determines that there is a pedestrian in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio image output unit 12052 has a rectangular contour line for emphasizing the recognized pedestrian.
- the display unit 12062 is controlled so as to be superimposed and displayed.
- voice image output part 12052 may control the display part 12062 so that the icon etc. which show a pedestrian may be displayed on a desired position.
- the present technology can also have the following configurations.
- the solid-state imaging device according to (1) further including a region having a conductivity type different from that of the photoelectric conversion unit between the inter-pixel separation unit and the photoelectric conversion unit.
- the solid-state imaging device according to any one of (1) to (3), wherein the inter-pixel separation unit is a DTI formed from a light incident surface side with respect to a substrate.
- the solid-state imaging device according to any one of (1) to (3), wherein the inter-pixel separation unit is a DTI formed from a surface side facing a light incident surface with respect to the substrate.
- the solid-state imaging device according to any one of (1) to (5), wherein the inter-pixel separation unit is formed in a lattice shape so as to separate the photoelectric conversion unit for each pixel.
- a length in a depth direction of the inter-pixel separation portion is different between the protrusion and the lattice-like side.
- the grid-like side of the inter-pixel separation unit has a triangular wave shape.
- the protrusion is a DTI formed from the light incident surface side with respect to the substrate
- the solid-state imaging device is A photoelectric conversion unit formed for each pixel; An inter-pixel separation unit that separates the photoelectric conversion unit of each pixel, and The inter-pixel separation unit includes an protrusion having a shape protruding toward the photoelectric conversion unit.
- the solid-state imaging device is A photoelectric conversion unit formed for each pixel; A grid-like inter-pixel separation unit for separating the photoelectric conversion unit of each pixel; An electronic device comprising: a columnar protrusion formed in the photoelectric conversion unit.
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Abstract
Description
本技術の第1の実施の形態である固体撮像素子の構成例(第1の構成例)について説明する。図1は、該第1の構成例におけるSi基板の中央付近における水平方向断面を示している。図2のAは、図1の線分X-X’における垂直方向の断面図、図2のBは、図1の線分Y-Y’における垂直方向の断面図を示している。
次に、本技術の第2の実施の形態である固体撮像素子の構成例(第2の構成例)について説明する。図3は、該第2の構成例のSi基板の中央付近における水平方向断面を示している。図4は、図2の線分X-X’における垂直方向の断面図を示している。なお、第1の構成例と共通する構成要素については同一の符号を付しているので、その説明は適宜省略する。
次に、本技術の第3の実施の形態である固体撮像素子の構成例(第3の構成例)について図5を参照して説明する。該第3の構成例は、第2の構成例におけるDTIをReverse-DTI(以下、R-DTIと称する)に限定したものである。
次に、本技術の第4の実施の形態である固体撮像素子の構成例(第4の構成例)について図6を参照して説明する。
次に、本技術の第5の実施の形態である固体撮像素子の構成例(第5の構成例)について図8を参照して説明する。
次に、画素分離部の変形例について説明する。
本開示に係る技術(本技術)は、様々な製品へ応用することができる。例えば、本開示に係る技術は、内視鏡手術システムに適用されてもよい。
本開示に係る技術(本技術)は、様々な製品へ応用することができる。例えば、本開示に係る技術は、自動車、電気自動車、ハイブリッド電気自動車、自動二輪車、自転車、パーソナルモビリティ、飛行機、ドローン、船舶、ロボット等のいずれかの種類の移動体に搭載される装置として実現されてもよい。
(1)
画素毎に形成されている光電変換部と、
各画素の前記光電変換部を分離する画素間分離部と
を備え、
前記画素間分離部は、前記光電変換部側に突出した形状の突起部を有する
固体撮像素子。
(2)
前記画素間分離部と前記光電変換部の間に前記光電変換部とは導電型が異なる領域をさらに備える
前記(1)に記載の固体撮像素子。
(3)
前記画素間分離部は、前記光電変換部よりも屈折率が低い材料または光を反射する材料のうちの少なくとも一方から形成されている
前記(1)または(2)に記載の固体撮像素子。
(4)
前記画素間分離部は、基板に対して光の入射面側から形成されたDTIである
前記(1)から(3)のいずれかに記載の固体撮像素子。
(5)
前記画素間分離部は、基板に対して光の入射面に対向する面側から形成されたDTIである
前記(1)から(3)のいずれかに記載の固体撮像素子。
(6)
前記画素間分離部は、前記光電変換部を画素毎に分離するように格子状に形成されている
前記(1)から(5)のいずれかに記載の固体撮像素子。
(7)
前記画素間分離部の深さ方向の長さは、前記突起部と前記格子状の辺とで異なる
前記(6)に記載の固体撮像素子。
(8)
前記画素間分離部が有する前記突起部は、画素の色毎に応じて変更されている
前記(1)から(7)のいずれかに記載の固体撮像素子。
(9)
前記画素間分離部が有する前記突起部は、画素の色毎に応じて長さが変更されている
前記(1)から(7)のいずれかに記載の固体撮像素子。
(10)
前記画素間分離部が有する前記突起部は、画素の色毎に応じて幅が変更されている
前記(1)から(7)のいずれかに記載の固体撮像素子。
(11)
前記画素間分離部が有する前記突起部は、画素の色毎に応じて数が変更されている
前記(1)から(7)のいずれかに記載の固体撮像素子。
(12)
前記画素間分離部が有する前記突起部は、共有画素のパターンに応じて変更されている
前記(1)から(7)のいずれかに記載の固体撮像素子。
(13)
前記画素間分離部が有する前記突起部は、共有画素のパターンに応じて長さが変更されている
前記(1)から(7)のいずれかに記載の固体撮像素子。
(14)
前記画素間分離部が有する前記突起部は、共有画素のパターンに応じて幅が変更されている
前記(1)から(7)のいずれかに記載の固体撮像素子。
(15)
前記画素間分離部が有する前記突起部は、共有画素のパターンに応じて数が変更されている
前記(1)から(7)のいずれかに記載の固体撮像素子。
(16)
前記画素間分離部が有する前記突起部は、光学中心から画素までの距離に応じて変更されている
前記(1)から(7)のいずれかに記載の固体撮像素子。
(17)
前記突起部を含む前記画素間分離部は、横方向部分と縦方向部分との直交箇所を有さない
前記(6)に記載の固体撮像素子。
(18)
前記画素間分離部の前記格子状の辺は、直線状である
前記(6)または(7)に記載の固体撮像素子。
(19)
前記画素間分離部の前記格子状の辺は、ジグザク状である
前記(6)または(7)に記載の固体撮像素子。
(20)
前記画素間分離部の前記格子状の辺は、三角波形状である
前記(6)または(7)に記載の固体撮像素子。
(21)
前記画素間分離部の前記格子状の辺は、半円を連続させた形状である
前記(6)または(7)に記載の固体撮像素子。
(22)
前記画素間分離部の前記格子状の辺は、半矩形を連続させた形状である
前記(6)または(7)に記載の固体撮像素子。
(23)
前記画素間分離部は、前記光電変換部とは導電型が異なるウェル領域から形成されている
前記(1)に記載の固体撮像素子。
(24)
画素毎に形成されている光電変換部と、
各画素の前記光電変換部を分離する格子状の画素間分離部と、
前記光電変換部内に形成された柱状の突起部と
を備える固体撮像素子。
(25)
前記画素間分離部および前記突起部と前記光電変換部の間に前記光電変換部とは導電型が異なるウェル領域をさらに備える
前記(24)に記載の固体撮像素子。
(26)
前記突起部は、前記光電変換部よりも屈折率が低い材料または光を反射する材料のうちの少なくとも一方から形成されている
前記(24)または(25)に記載の固体撮像素子。
(27)
前記突起部は、基板に対して光の入射面側から形成されたDTIであり、
前記画素間分離部は、基板に対して光の入射面に対向する面側から形成されたDTIである
前記(24)から(26)のいずれかに記載の固体撮像素子。
(28)
前記突起部は、円柱状である
前記(24)から(27)のいずれかに記載の固体撮像素子。
(29)
前記突起部は、多角形柱状である
前記(24)から(27)のいずれかに記載の固体撮像素子。
(30)
前記固体撮像素子は、裏面照射型である
前記(1)から(29)のいずれかに記載の固体撮像素子。
(31)
固体撮像素子が搭載された電子機器において、
前記固体撮像素子は、
画素毎に形成されている光電変換部と、
各画素の前記光電変換部を分離する画素間分離部と
を備え、
前記画素間分離部は、前記光電変換部側に突出した形状の突起部を有する
電子機器。
(32)
固体撮像素子が搭載された電子機器において、
前記固体撮像素子は、
画素毎に形成されている光電変換部と、
各画素の前記光電変換部を分離する格子状の画素間分離部と、
前記光電変換部内に形成された柱状の突起部と
を備える
電子機器。
Claims (32)
- 画素毎に形成されている光電変換部と、
各画素の前記光電変換部を分離する画素間分離部と
を備え、
前記画素間分離部は、前記光電変換部側に突出した形状の突起部を有する
固体撮像素子。 - 前記画素間分離部と前記光電変換部の間に前記光電変換部とは導電型が異なる領域をさらに備える
請求項1に記載の固体撮像素子。 - 前記画素間分離部は、前記光電変換部よりも屈折率が低い材料または光を反射する材料のうちの少なくとも一方から形成されている
請求項2に記載の固体撮像素子。 - 前記画素間分離部は、基板に対して光の入射面側から形成されたDTIである
請求項2に記載の固体撮像素子。 - 前記画素間分離部は、基板に対して光の入射面に対向する面側から形成されたDTIである
請求項2に記載の固体撮像素子。 - 前記画素間分離部は、前記光電変換部を画素毎に分離するように格子状に形成されている
請求項2に記載の固体撮像素子。 - 前記画素間分離部の深さ方向の長さは、前記突起部と前記格子状の辺とで異なる
請求項6に記載の固体撮像素子。 - 前記画素間分離部が有する前記突起部は、画素の色毎に応じて変更されている
請求項2に記載の固体撮像素子。 - 前記画素間分離部が有する前記突起部は、画素の色毎に応じて長さが変更されている
請求項8に記載の固体撮像素子。 - 前記画素間分離部が有する前記突起部は、画素の色毎に応じて幅が変更されている
請求項8に記載の固体撮像素子。 - 前記画素間分離部が有する前記突起部は、画素の色毎に応じて数が変更されている
請求項8に記載の固体撮像素子。 - 前記画素間分離部が有する前記突起部は、共有画素のパターンに応じて変更されている
請求項2に記載の固体撮像素子。 - 前記画素間分離部が有する前記突起部は、共有画素のパターンに応じて長さが変更されている
請求項12に記載の固体撮像素子。 - 前記画素間分離部が有する前記突起部は、共有画素のパターンに応じて幅が変更されている
請求項12に記載の固体撮像素子。 - 前記画素間分離部が有する前記突起部は、共有画素のパターンに応じて数が変更されている
請求項12に記載の固体撮像素子。 - 前記画素間分離部が有する前記突起部は、光学中心から画素までの距離に応じて変更されている
請求項2に記載の固体撮像素子。 - 前記突起部を含む前記画素間分離部は、横方向部分と縦方向部分との直交箇所を有さない
請求項6に記載の固体撮像素子。 - 前記画素間分離部の前記格子状の辺は、直線状である
請求項6に記載の固体撮像素子。 - 前記画素間分離部の前記格子状の辺は、ジグザク状である
請求項6に記載の固体撮像素子。 - 前記画素間分離部の前記格子状の辺は、三角波形状である
請求項6に記載の固体撮像素子。 - 前記画素間分離部の前記格子状の辺は、半円を連続させた形状である
請求項6に記載の固体撮像素子。 - 前記画素間分離部の前記格子状の辺は、半矩形を連続させた形状である
請求項6に記載の固体撮像素子。 - 前記画素間分離部は、前記光電変換部とは導電型が異なるウェル領域から形成されている
請求項1に記載の固体撮像素子。 - 画素毎に形成されている光電変換部と、
各画素の前記光電変換部を分離する格子状の画素間分離部と、
前記光電変換部内に形成された柱状の突起部と
を備える固体撮像素子。 - 前記画素間分離部および前記突起部と前記光電変換部の間に前記光電変換部とは導電型が異なるウェル領域をさらに備える
請求項24に記載の固体撮像素子。 - 前記突起部は、前記光電変換部よりも屈折率が低い材料または光を反射する材料のうちの少なくとも一方から形成されている
請求項25に記載の固体撮像素子。 - 前記突起部は、基板に対して光の入射面側から形成されたDTIであり、
前記画素間分離部は、基板に対して光の入射面に対向する面側から形成されたDTIである
請求項25に記載の固体撮像素子。 - 前記突起部は、円柱状である
請求項25に記載の固体撮像素子。 - 前記突起部は、多角形柱状である
請求項25に記載の固体撮像素子。 - 前記固体撮像素子は、裏面照射型である
請求項1に記載の固体撮像素子。 - 固体撮像素子が搭載された電子機器において、
前記固体撮像素子は、
画素毎に形成されている光電変換部と、
各画素の前記光電変換部を分離する画素間分離部と
を備え、
前記画素間分離部は、前記光電変換部側に突出した形状の突起部を有する
電子機器。 - 固体撮像素子が搭載された電子機器において、
前記固体撮像素子は、
画素毎に形成されている光電変換部と、
各画素の前記光電変換部を分離する格子状の画素間分離部と、
前記光電変換部内に形成された柱状の突起部と
を備える
電子機器。
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KR1020247009146A KR20240042173A (ko) | 2017-01-30 | 2018-01-17 | 고체 촬상 소자 및 전자 기기 |
KR1020237015515A KR102651326B1 (ko) | 2017-01-30 | 2018-01-17 | 고체 촬상 소자 및 전자 기기 |
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CN202310844246.6A CN117059640A (zh) | 2017-01-30 | 2018-01-17 | 固态成像装置和电子设备 |
US16/478,431 US11495628B2 (en) | 2017-01-30 | 2018-01-17 | Solid-state imaging element and electronic equipment |
KR1020237001725A KR102531421B1 (ko) | 2017-01-30 | 2018-01-17 | 고체 촬상 소자 및 전자 기기 |
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US17/950,149 US11742366B2 (en) | 2017-01-30 | 2022-09-22 | Solid-state imaging element and electronic equipment |
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EP3576152B1 (en) | 2021-12-29 |
DE202018006735U1 (de) | 2022-06-08 |
KR20230017356A (ko) | 2023-02-03 |
JP2023033404A (ja) | 2023-03-10 |
KR102651326B1 (ko) | 2024-03-27 |
KR102490316B1 (ko) | 2023-01-19 |
KR102531421B1 (ko) | 2023-05-12 |
EP3576152A1 (en) | 2019-12-04 |
CN110199393A (zh) | 2019-09-03 |
KR20240042173A (ko) | 2024-04-01 |
CN110199393B (zh) | 2023-07-18 |
EP3576152A4 (en) | 2020-03-04 |
KR20190110538A (ko) | 2019-09-30 |
US20210134863A1 (en) | 2021-05-06 |
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US11495628B2 (en) | 2022-11-08 |
KR20230069254A (ko) | 2023-05-18 |
US20230307470A1 (en) | 2023-09-28 |
JP7210288B2 (ja) | 2023-01-23 |
JPWO2018139279A1 (ja) | 2019-11-14 |
US20230016268A1 (en) | 2023-01-19 |
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