WO2018119959A1 - 干蚀刻设备 - Google Patents

干蚀刻设备 Download PDF

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Publication number
WO2018119959A1
WO2018119959A1 PCT/CN2016/113297 CN2016113297W WO2018119959A1 WO 2018119959 A1 WO2018119959 A1 WO 2018119959A1 CN 2016113297 W CN2016113297 W CN 2016113297W WO 2018119959 A1 WO2018119959 A1 WO 2018119959A1
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WIPO (PCT)
Prior art keywords
substrate
dry etching
etching apparatus
electrode plate
support
Prior art date
Application number
PCT/CN2016/113297
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English (en)
French (fr)
Inventor
王雪刚
Original Assignee
深圳市柔宇科技有限公司
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Application filed by 深圳市柔宇科技有限公司 filed Critical 深圳市柔宇科技有限公司
Priority to CN201680042993.6A priority Critical patent/CN107995994A/zh
Priority to PCT/CN2016/113297 priority patent/WO2018119959A1/zh
Publication of WO2018119959A1 publication Critical patent/WO2018119959A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32908—Utilities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like

Definitions

  • the present invention relates to the field of display device manufacturing, and in particular to a dry etching device.
  • the film is disposed on the substrate for the etching process.
  • the substrate may be broken, and if the subsequent process is continued, the device components in contact with the substrate may be damaged.
  • the present invention aims to solve at least one of the technical problems in the related art to some extent. To this end, the present invention proposes a dry etching apparatus.
  • a dry etching apparatus for performing etching processing on a film disposed on a substrate, the dry etching apparatus comprising:
  • a controller for processing the output of the pressure sensor to determine whether the substrate is broken.
  • the pressure sensor can effectively monitor whether the substrate is damaged by the pressure applied to the corresponding support column by the substrate, and timely change the working state of the related device components through the controller to avoid damage to the device components that are in basic contact, and prolong the dryness.
  • the service life of the etching equipment can effectively monitor whether the substrate is damaged by the pressure applied to the corresponding support column by the substrate, and timely change the working state of the related device components through the controller to avoid damage to the device components that are in basic contact, and prolong the dryness.
  • the plurality of support columns support the substrate vertically.
  • the substrate has a rectangular shape, and the plurality of support columns respectively support an edge and a central portion of the substrate.
  • the dry etching apparatus includes a lower electrode plate, and the plurality of support columns are vertically disposed on a surface of the lower electrode plate.
  • the controller is configured to control the support column to rise when the substrate is picked up and lowered to lift the substrate away from the lower electrode plate and to control the support column to descend during an etching process to place the substrate On the lower electrode plate.
  • the controller is further configured to detect the pressure sensor signal and control the support column to stop lifting when the pressure sensor signal is detected to be abnormal.
  • the support post is disposed perpendicular to the lower electrode plate.
  • the support post includes an upper segment that is separated from the lower electrode plate when raised, and the upper segment is made of an insulating material.
  • the support column includes a lower section that is coupled to the upper section and the lower section is supported by stainless steel.
  • the dry etching apparatus includes a lifting platform, the support column is disposed on the lifting platform, and the pressure sensor is disposed on the corresponding supporting column and the lifting platform, the control The device is configured to control the lifting platform to lift and lower the support column.
  • the dry etching apparatus includes a lower electrode plate and an upper electrode plate opposite to the lower electrode plate, the upper electrode plate is provided with a vent hole for the dry Etching gas is introduced into the etching device,
  • the controller is configured to detect the pressure sensor signal and control the vent to close when the pressure sensor signal is abnormal.
  • the dry etching apparatus includes a robot for carrying the substrate into and out of the reaction chamber.
  • a reaction chamber is formed between the upper electrode plate and the lower electrode plate, the dry etching apparatus including a plurality of the reaction chambers, the plurality of reaction chambers being independent of each other.
  • FIG. 1 is a schematic side view of a dry etching apparatus according to an embodiment of the present invention.
  • Figure 2 is an enlarged schematic view of Figure 1 at I.
  • FIG. 3 is a schematic plan view of a dry etching apparatus according to an embodiment of the present invention.
  • FIG. 4 is another schematic plan view of a dry etching apparatus according to an embodiment of the present invention.
  • FIG. 5 is another schematic plan view of a dry etching apparatus according to an embodiment of the present invention.
  • a dry etching apparatus 100 is used for etching a film (not shown) disposed on a substrate 200.
  • the dry etching apparatus 100 includes a plurality of support columns 10, a plurality of pressure sensors 20, and a controller 30.
  • a plurality of support columns 10 are used to support different locations of the substrate 200.
  • a plurality of pressure sensors 20 are used to sense the pressure applied by the substrate 200 to the corresponding support column 10, respectively.
  • the controller 30 is for processing the output of the pressure sensor 20 to determine whether the substrate 200 is broken.
  • Dry etching is mostly used in TFT-LCD (liquid crystal panel) process reactions, and the substrate 200 used in the TFT-LCD process reaction is usually glass, and the thickness is only 0.3-0.7 mm, which is prone to breakage or other during dry etching. damage.
  • the pressure applied by the substrate 200 to each of the support columns 10 should be measurable and fixed.
  • the record can be measured as the default pressure. If the pressure measured by the pressure sensor 20 is substantially the same as the default pressure, the controller 30 can determine the substrate 200. The whole is not broken, and if the pressure measured by the pressure sensor 20 differs greatly from the default pressure, the controller 30 can judge that the substrate 200 is broken.
  • the pressure sensor 20 can effectively monitor whether the substrate 200 is damaged by the pressure applied to the corresponding support column 10 by the substrate 200, and timely change the working state of the related device components through the controller 30 to avoid Damage to the substantially contacted device components extends the useful life of the dry etching apparatus 100.
  • the film is disposed on the substrate 200 and covers the surface of the substrate 200.
  • the thickness of the film is only a few microns.
  • the surface of the film is provided with a photoresist.
  • the dry etching of the film is the reaction of the active group in the plasma formed by the electric field under the action of the electric field to react with the surface of the film that is not blocked by the photoresist to form a volatile substance and Walk to achieve the etching of the surface of the film or the wiring of the line.
  • Dry etching is simple and consumes less water, which saves energy and reduces the manufacturing cost of the display or semiconductor. At the same time, dry etching can achieve anisotropic etching, thereby ensuring the fidelity of the fine pattern transfer on the substrate 200 film.
  • the plurality of support columns 10 vertically support the substrate 200.
  • the pressure applied by the substrate 200 to the support column 10 is equal to the gravity of the substrate 200, and the pressure sensor 20 directly measures the pressure to determine whether the substrate 200 is damaged, without performing other conversion on the measured pressure value, simplifying the pressure.
  • the program of the sensor 20 improves the response speed of the pressure sensor 20, and ensures that the pressure sensor 20 can be found in time after the substrate 200 is damaged.
  • the support post 10 may also be disposed as needed so that the support post 10 forms an angle with the substrate 200.
  • the portion where the support post 10 and the substrate 200 are in contact may be provided in a zigzag shape.
  • the friction between the support post 10 and the substrate 200 is greatly increased, and the support post 10 supports the substrate 200 to be less likely to be displaced or tilted, which improves the stability of the substrate 200 disposed on the support post 10, and ensures that the etching reaction can be stably performed.
  • the substrate 200 has a rectangular shape, and the plurality of support columns 10 respectively support the edge and the central portion of the substrate 200.
  • the support column 10 can provide stable support for the substrate 200, and at the same time, the number of the support columns 10 can be saved, and the processing cost can be reduced.
  • the reduction in the number of support posts 10 also optimizes the space within the dry etch apparatus 100, making the structure of the dry etch apparatus 100 simpler and easier to manufacture.
  • the number of support columns 10 can be ten.
  • two support columns 10 are disposed on each side of the rectangular substrate 200, and two support columns 10 are disposed in the intermediate portion of the rectangular substrate 200.
  • the support post 10 can provide a more secure support for the substrate 200.
  • the number of support columns 10 is not limited to the embodiments discussed above. In the dry etching operation, the number of support columns 10 can be replaced according to the quality and size of the conventional substrate 200.
  • the dry etching apparatus 100 includes a lower electrode plate 40, and a plurality of support columns 10 are vertically disposed on the surface of the lower electrode plate 40.
  • the controller 30 is configured to control the support post 10 to rise when the substrate 200 is picked up and lowered to lift the substrate 200 away from the lower electrode plate 40 and to control the support post 10 to descend during the etching process to place the substrate 200 on the lower electrode plate 40.
  • the support pillar 10 drives the substrate 200 to descend.
  • the distance between the substrate 200 and the upper electrode in the dry etching apparatus 100 is increased, so that the dry etching apparatus 100 can accommodate More process gases, and more plasma generated etching of the film on the substrate 200, improves the efficiency of dry etching.
  • the support column 10 drives the substrate 200 to rise, and the substrate 200 is separated from the surface of the lower electrode plate 40.
  • the entry and exit of the substrate 200 further extends the useful life of the dry etching apparatus 100.
  • the lower electrode surface is provided with a through hole
  • the support post 10 is disposed on the lower electrode plate 40 through the through hole, and the support post 10 and the through hole are closely connected.
  • the support column 10 can be freely raised and lowered through the through hole, and the process gas in the dry etching apparatus 100 can be prevented from leaking from the through hole, causing corrosion of the device or threatening human health.
  • the ascending and descending of the support column 10 can be completed by a drive motor disposed at the bottom of the support column 10.
  • the rise and fall of the support column 10 is easy to implement, and the manufacturing cost of the drive motor is low, and maintenance and replacement are also convenient.
  • the controller 30 is further configured to detect the pressure sensor 20 signal and control the support column 10 to stop lifting when a signal abnormality of the pressure sensor 20 is detected.
  • the support column 10 can be prevented from continuing to work after the substrate 200 is damaged, thereby damaging other equipment components, and prolonging the service life of the dry etching apparatus 100.
  • the pressure sensor 20 can employ a piezoresistive pressure sensor.
  • the piezoresistive pressure sensor is fabricated using a piezoresistive effect of a single crystal silicon material and integrated circuit technology for applying a substrate 200 to a pressure transition electrical signal of the support column 10 to monitor the damage of the substrate 200.
  • the piezoresistive pressure sensor adopts an integrated process to integrate the resistor strip on the single crystal silicon diaphragm to form a silicon piezoresistive chip, and fixes the periphery of the silicon piezoresistive chip to lead the electrode lead.
  • the piezoresistive pressure sensor senses the measured pressure directly through the silicon diaphragm.
  • One side of the silicon diaphragm is a high pressure chamber that communicates with the support column 10, and the other side is a low pressure chamber that communicates with the atmosphere.
  • the electrode lead converts the pressure data measured by the piezoresistive pressure sensor 20 into an electrical signal for transmission to the controller 30.
  • the frequency response of the pressure sensor 20 is high, the dynamic measurement is accurate, and the volume of the pressure sensor 20 is small, and it is easy to achieve miniaturization, and the space occupied by the dry etching apparatus 100 is small.
  • the piezoresistive pressure sensor 20 has high sensitivity and the measurement result is relatively accurate.
  • the piezoresistive pressure sensor 20 does not include moving parts, and has high reliability, and slight vibration collision does not affect measurement accuracy.
  • an amplifier can be added to the pressure sensor 20.
  • the pressure applied to the pressure sensor 20 by the substrate 200 can be more accurately sensed by the pressure sensor 20, and the damage of the substrate 200 is more easily found, further avoiding the damage of the other device components after the substrate 200 is damaged.
  • the support post 10 is disposed perpendicular to the lower electrode plate 40.
  • the support post 10 can be stably disposed on the lower electrode plate 40 to provide a stable support for the substrate 200.
  • the pressure applied by the substrate 200 measured by the pressure sensor 20 is the gravity of the substrate 200, and the controller 30 is not required to perform further conversion, which reduces the burden on the controller 30 and makes the controller 30 react more quickly.
  • the support post 10 includes an upper section that is separated from the lower electrode plate 40 when raised, and the upper section is made of an insulating material.
  • the insulating material is used to prevent the plasma in the support column 10 and the etching space from reacting, so that the height of the supporting column 10 is inconsistent. 200 can not be placed stably.
  • the insulating material includes ceramic.
  • the ceramics are relatively chemically stable and generally do not react with the process gas and do not affect the support of the substrate 200. At the same time, ceramics are cheap and easy to manufacture, reducing the cost of etching.
  • the support column 10 includes a lower section that is coupled to the upper section and a lower section that is supported by stainless steel.
  • Stainless steel has high hardness and low price, which can provide stable support for the substrate 200 and reduce production costs.
  • the dry etching apparatus 100 includes a lifting platform, the support column 10 is disposed on the lifting platform, the pressure sensor 20 is disposed on the corresponding supporting column 10 and the lifting platform, and the controller 30 is configured to control the lifting platform to lift and lower Support column 10.
  • the controller 30 controls the lifting platform to rise, so that the end of the supporting column 10 contacting the substrate 200 is away from the surface of the lower electrode plate 40, facilitating the placement of the substrate 200; after the substrate 200 is placed in position
  • the controller 30 controls the lifting platform to descend, the support column 10 descends, and the substrate 200 and the lower electrode plate 40 are in surface contact to perform an etching reaction.
  • the lifting platform can adopt a fixed lifting platform.
  • the stability of the lifting platform is high, and the support column 10 can provide a relatively stable support for the substrate 200 to ensure the effect of the etching reaction.
  • the dry etching apparatus 100 includes a lower electrode plate 40 and an upper electrode plate opposite to the lower electrode plate 40.
  • the upper electrode plate is provided with a vent hole for etching into the dry etching apparatus 100. gas
  • the controller 30 is for detecting the pressure sensor 20 signal and controlling the vent closing when the pressure sensor 20 signal is abnormal.
  • the controller 30 stops the entry of the process gas in time, thereby avoiding waste of the process gas.
  • the process gas is usually a fluoride gas such as carbon tetrafluoride, nitrogen trifluoride, hexafluoroethane, perfluoropropane, trifluoromethane or the like.
  • a fluoride gas such as carbon tetrafluoride, nitrogen trifluoride, hexafluoroethane, perfluoropropane, trifluoromethane or the like.
  • the directionality of the etching is strong, the process control is precise and convenient, and the substrate 200 has no degumming after the etching is completed, and is not damaged or stained.
  • vent holes on the upper electrode plate are covered by ceramic.
  • the vent hole is in contact with the process gas for a long time, and the ceramic vent hole is used to prevent the vent hole from being corroded by the process gas.
  • the life of the upper electrode plate is greatly prolonged, and it is not necessary to replace it frequently, thereby reducing the production cost.
  • the size of the vent hole remains unchanged, which also ensures that the amount of process gas passing into the dry etching apparatus 100 is effectively controlled, and the accuracy of the etching result is improved.
  • the dry etching apparatus 100 includes a robot 60 for carrying the substrate 200 into and out of the reaction chamber 50 .
  • the controller 30 controls the robot 60 to stop running, thereby avoiding the damage of the substrate 200 during the process of transporting the substrate 200 by the robot 60, and reading the other undamaged substrate 200 to cause further damage, thereby reducing the substrate.
  • the damage rate of 200 guarantees the production efficiency.
  • the use of the robot 60 to grasp the substrate 200 into and out of the reaction chamber 50 is also easy to achieve automated production, improve production efficiency, and thereby increase production benefits.
  • a reaction chamber 50 is formed between the upper electrode plate and the lower electrode plate 40.
  • the dry etching apparatus 100 includes a plurality of reaction chambers 50, and the plurality of reaction chambers 50 are independent of each other.
  • the pressure sensor 20 in one of the reaction chambers 50 detects damage to the substrate 200
  • the controller 30 controls the reaction chamber 50 to stop working
  • the other reaction chambers 50 can continue to work, thereby avoiding the problem that the substrate 200 is damaged and the productivity of the dry etching apparatus 100 is completely stopped, thereby improving the production efficiency and increasing the equipment.
  • the movement of the crop is not limited to.
  • the process gas is introduced into the dry etching apparatus 100, it is excited into a plasma by the voltage between the upper electrode plate and the lower electrode plate 40.
  • the plasma etches the region of the substrate 200 that is not covered by the photoresist, and the gas generated by the etching is carried away with the airflow, and does not leave marks on the substrate 200, which is convenient and quick.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
  • features defining “first” and “second” may include one or more of the features either explicitly or implicitly.
  • the meaning of "a plurality” is two or more unless specifically and specifically defined.
  • the terms “installation”, “connected”, “connected”, “fixed” and the like shall be understood broadly, and may be either a fixed connection or a detachable connection, unless explicitly stated and defined otherwise. , or integrated; can be mechanical connection, or can be electrical connection; can be directly connected, or can be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction of two elements.
  • installation can be understood on a case-by-case basis.
  • the first feature "on” or “under” the second feature may be a direct contact of the first and second features, or the first and second features may be indirectly through an intermediate medium, unless otherwise explicitly stated and defined. contact.
  • the first feature "above”, “above” and “above” the second feature may be the first feature Immediately above or obliquely above the second feature, or simply indicating that the first feature is at a higher level than the second feature.
  • the first feature "below”, “below” and “below” the second feature may be that the first feature is directly below or obliquely below the second feature, or merely that the first feature level is less than the second feature.

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Abstract

一种干蚀刻设备，用于对设置在基板200上的膜材进行蚀刻处理，包括支撑柱10、压力传感器20和控制器30。多根支撑柱10用于支撑基板200。多个压力传感器20分别用于感测基板200施加到对应的支撑柱10上的压力。控制器30用于处理压力传感器20的输出以判断基板200是否破碎。压力传感器20能通过基板200施加到对应支撑柱10上的压力有效监测基板是否损坏，并通过控制器30及时改变相关设备元件的工作状态避免与基板接触的设备元件发生损坏，延长了干蚀刻设备的使用寿命。

Description

干蚀刻设备 技术领域
本发明涉及显示设备制造领域，具体涉及一种干蚀刻设备。
背景技术
自动化干蚀刻时，膜材设置在基板上进行蚀刻工艺，然而，蚀刻过程中，基板可能发生破碎，若继续进行后续工艺可能会损坏与基板接触的设备元件。
发明内容
本发明旨在至少在一定程度上解决相关技术中的技术问题之一。为此，本发明提出一种干蚀刻设备。
本发明实施方式的干蚀刻设备，用于对设置在基板上的膜材进行蚀刻处理，所述干蚀刻设备包括：
多根用于支撑所述基板的不同位置的支撑柱；
多个分别用于感测所述基板施加到对应的所述支撑柱上的压力的压力传感器；和
用于处理所述压力传感器的输出以判断所述基板是否破碎的控制器。
本发明实施方式中，压力传感器能通过基板施加到对应支撑柱上的压力有效监测基板是否损坏，并通过控制器及时改变相关设备元件的工作状态避免与基本接触的设备元件发生损坏，延长了干蚀刻设备的使用寿命。
在某些实施方式中，所述多根支撑柱垂直支撑所述基板。
在某些实施方式中，所述基板呈矩形，所述多根支撑柱分别支撑所述基板的边缘和中心部分。
在某些实施方式中，所述干蚀刻设备包括下电极板，所述多根支撑柱可升降地设置在所述下电极板表面，
所述控制器用于在取放所述基板时控制所述支撑柱升起以使所述基板升离所述下电极板和在蚀刻处理时控制所述支撑柱下降以使所述基板放置所述下电极板上。
在某些实施方式中，所述控制器还用于检测所述压力传感器信号并在检测到所述压力传感器信号异常时控制所述支撑柱停止升降。
在某些实施方式中，所述支撑柱与所述下电极板垂直设置。
在某些实施方式中，所述支撑柱包括升起时与所述下电极板分离的上段，所述上段采用绝缘材料制成。
在某些实施方式中，所述支撑柱包括与所述上段连接的下段，所述下段采用不锈钢支撑。
在某些实施方式中，所述干蚀刻设备包括升降平台，所述支撑柱设置在所述升降平台上，所述压力传感器设置在对应的所述支撑柱和所述升降平台上，所述控制器用于控制所述升降平台升降以升降所述支撑柱。
在某些实施方式中，所述干蚀刻设备包括下电极板和与所述下电极板相对的上电极板，所述上电极板上开设有通气孔，所述通气孔用于向所述干蚀刻设备中通入蚀刻气体，
所述控制器用于检测所述压力传感器信号并在所述压力传感器信号异常时控制所述通气孔关闭。
在某些实施方式中，所述干蚀刻设备包括机械手，所述机械手用于承载所述基板进出所述反应腔。
在某些实施方式中，所述上电极板和所述下电极板之间形成反应腔，所述干蚀刻设备包括多个所述反应腔，所述多个反应腔相互独立。
本发明的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。
附图说明
本发明的上述和/或附加的方面和优点从结合下面附图对实施方式的描述中将变得明显和容易理解，其中：
图1是本发明实施方式的干蚀刻设备的侧面示意图。
图2是图1在I处的放大示意图。
图3是本发明实施方式的干蚀刻设备的平面示意图。
图4是本发明实施方式的干蚀刻设备的另一平面示意图。
图5是本发明实施方式的干蚀刻设备的又一平面示意图。
具体实施方式
以下结合附图对本发明的实施方式作进一步说明。附图中相同或类似的标号自始至终表示相同或类似的元件或具有相同或类似功能的元件。
另外，下面结合附图描述的本发明的实施方式是示例性的，仅用于解释本发明的实施方式，而不能理解为对本发明的限制。
请参阅图1和图2，本发明实施方式的干蚀刻设备100，用于对设置在基板200上的膜材(图未示)进行蚀刻处理。干蚀刻设备100包括多根支撑柱10、多个压力传感器20和控制器30。多根支撑柱10用于支撑基板200的不同位置。多个压力传感器20分别用于感测基板200施加到对应的支撑柱10上的压力。控制器30用于处理压力传感器20的输出以判断基板200是否破碎。
干蚀刻较多地应用在TFT-LCD(液晶屏)制程反应中，而TFT-LCD制程反应采用的基板200通常为玻璃，厚度仅为0.3-0.7毫米，在干蚀刻过程中容易发生断裂或其他损坏。
可以理解，假若基板200未发生破碎，基板200施加到各个支撑柱10上的压力应该是可以测量而且是固定的，例如，基板200平放，则施加到各个支撑柱10的压力基本相同，如此可以测量记录作为默认压力。假若压力传感器20测量的压力与默认压力基本相同，则控制器30可以判断基板200 完整未破碎，而假若压力传感器20测量的压力与默认压力差别较大，则控制器30可以判断基板200破碎。
因此，本发明实施方式的干蚀刻设备100，压力传感器20能通过基板200施加到对应支撑柱10上的压力有效监测基板200是否损坏，并通过控制器30及时改变相关设备元件的工作状态避免与基本接触的设备元件发生损坏，延长了干蚀刻设备100的使用寿命。
膜材设置在基板200上，且覆盖基板200表面。膜材的厚度仅为几微米。膜材表面设置有光阻，膜材干蚀刻就是利用蚀刻气体在电场加速作用下形成的等离子体中的活性基与膜材表面未被光阻遮挡的部分发生反应形成挥发性物质并随气流带走，实现膜材表面纹路或线路的蚀刻。
干蚀刻操作简单，且耗水量小，节约了能源，降低了显示屏或半导体的制造成本。同时，干蚀刻能实现各向异性蚀刻，从而保证了基板200膜材上的细小图形转移后的保真性。
在某些实施方式中，多根支撑柱10垂直支撑基板200。
如此，基板200对支撑柱10施加的压力和基板200的重力相等，压力传感器20直接测得压力后即可判断出基板200是否损坏，而无需对测得的压力值进行其他转化，简化了压力传感器20的程序，提高了压力传感器20的响应速度，保证了基板200出现损坏后压力传感器20能及时发现。
当然，在其他实施方式中，也可以根据需要设置支撑柱10使得支撑柱10与基板200形成一定角度。
具体地，支撑柱10和基板200接触的部分可以设置成锯齿形。
如此，支撑柱10和基板200之间的摩擦力大大增加，支撑柱10支撑基板200不易发生位移或者倾斜，提高了基板200设置在支撑柱10上的稳定性，保证了蚀刻反应能稳定进行。
在某些实施方式中，基板200呈矩形，多根支撑柱10分别支撑基板200的边缘和中心部分。
如此，支撑柱10能为基板200提供稳定的支撑，同时，还能节省支撑柱10的数量，降低加工成本。当然，支撑柱10的数量减少还能优化干蚀刻设备100内的空间，使干蚀刻设备100的结构更简单，更易于制造。
支撑柱10的数量可以为10个。
具体地，矩形基板200的每条边上设置2个支撑柱10，矩形基板200的中间区域设置两个支撑柱10。
如此，支撑柱10能为基板200提供较稳妥的支撑。
当然，支撑柱10的数量不限于上述讨论的实施方式。在干蚀刻操作中，支撑柱10的数量可以根据常用基板200的质量和大小更换。
在某些实施方式中，干蚀刻设备100包括下电极板40，多根支撑柱10可升降地设置在下电极板40表面，
控制器30用于在取放基板200时控制支撑柱10升起以使基板200升离下电极板40和在蚀刻处理时控制支撑柱10下降以使基板200放置在下电极板40上。
本发明实施方式中，基板200放置到支撑柱10上后支撑柱10带动基板200下降，如此，增大了干蚀刻设备100中基板200和上电极之间的距离，使得干蚀刻设备100能容纳更多的制程气体，并产生更多电浆对基板200上的膜材进行蚀刻，提高了干蚀刻的效率。基板200上的膜材蚀刻完成后支撑柱10带动基板200上升，基板200脱离下电极板40表面，如此，方便将基板200取出干蚀刻设备100而不会损坏到下电极板40，既方便了基板200的进出，又延长了干蚀刻设备100的使用寿命。
具体地，下电极表面开设有通孔，支撑柱10穿过通孔设置在下电极板40上，支撑柱10和通孔紧密连接。
如此，既能保证支撑柱10能穿过通孔自由上升下降，又能避免干蚀刻设备100中的制程气体从通孔泄露，造成设备的腐蚀或对人体健康造成威胁。
进一步地，支撑柱10的上升下降可由设置在支撑柱10底部的驱动马达完成。
如此，支撑柱10的上升下降易于实现，且驱动马达的制造成本低，维修更换也方便。
在某些实施方式中，控制器30还用于检测压力传感器20信号并在检测到压力传感器20信号异常时控制支撑柱10停止升降。
如此，能避免基板200损坏后支撑柱10继续工作，从而损坏其他设备元件，延长了干蚀刻设备100的使用寿命。
压力传感器20可采用压阻式压力传感器。压阻式压力传感器利用单晶硅材料的压阻效应和集成电路技术制成，用于将基板200施加到支撑柱10的压力转变电信号，来监测基板200的破损情况。
具体地，压阻式压力传感器采用集成工艺将电阻条集成在单晶硅膜片上，制成硅压阻芯片，并将硅压阻芯片的周边固定封装，引出电极引线。压阻式压力传感器直接通过硅膜片感受被测压力。硅膜片的一面是与支撑柱10连通的高压腔，另一面是与大气连通的低压腔。电极引线将压阻式压力传感器20测得的压力数据转化成电信号发送给控制器30。
如此，压力传感器20的频率响应高，动态测量准确，且压力传感器20的体积小，易于实现微型化，占用干蚀刻设备100的空间小。同时，压阻式压力传感器20的灵敏度高，测量结果较为准确。压阻式压力传感器20还不包括活动部件，可靠性高，轻微震动碰撞不会影响测量精度。
进一步地，压力传感器20上还能增加放大器。
如此，基板200施加到压力传感器20上的压力能更精确地被压力传感器20感知，基板200的破损情况也就更容易被发现，进一步避免了基板200损坏后损坏其他设备元件的情况。
在某些实施方式中，支撑柱10与下电极板40垂直设置。
如此，支撑柱10能稳定设置在下电极板40上，为基板200提供稳定支 撑，同时压力传感器20测得的基板200施加的压力就是基板200的重力，无需控制器30进行进一步转化，减轻了控制器30的负担，使控制器30反应更迅速。
在某些实施方式中，支撑柱10包括升起时与下电极板40分离的上段，上段采用绝缘材料制成。
由于膜材蚀刻过程中支撑柱10的上段和蚀刻空间内的电浆接触，采用绝缘材料制成，能避免支撑柱10和蚀刻空间内的电浆发生反应，从而使支撑柱10高度不一致，基板200无法稳定放置的情况。
具体地，绝缘材料包括陶瓷。
如此，陶瓷化学性质较稳定，一般不与制程气体发生反应，不会影响对基板200的支撑作用。同时，陶瓷价格便宜，制造方便，能降低蚀刻加工的成本。
在某些实施方式中，支撑柱10包括与上段连接的下段，下段采用不锈钢支撑。
不锈钢硬度高，价格低，既能为基板200提供稳定支撑，又能降低生产成本。
在某些实施方式中，干蚀刻设备100包括升降平台，支撑柱10设置在升降平台上，压力传感器20设置在对应的支撑柱10和升降平台上，控制器30用于控制升降平台升降以升降支撑柱10。
如此，将基板200放置到干蚀刻设备100中时，控制器30控制升降平台上升，使支撑柱10与基板200接触的一端远离下电极板40表面，方便基板200的放置；基板200放置到位后，控制器30控制升降平台下降，支撑柱10随之下降，基板200和下电极板40表面接触，进行蚀刻反应。
具体地，升降平台可采用固定式升降平台。
如此，升降平台的稳定性高，支撑柱10能为基板200提供较稳定的支撑，保证蚀刻反应的效果。
在某些实施方式中，干蚀刻设备100包括下电极板40和与下电极板40相对的上电极板，上电极板上开设有通气孔，通气孔用于向干蚀刻设备100中通入蚀刻气体，
控制器30用于检测压力传感器20信号并在压力传感器20信号异常时控制通气孔关闭。
如此，压力传感器20检测到基板200损坏后，控制器30及时停止制程气体的进入，避免了制程气体的浪费。
具体地，制程气体通常为氟化物气体，例如四氟化碳、三氟化氮、六氟乙烷、全氟丙烷和三氟甲烷等。
如此，蚀刻的方向性强，工艺控制精确，方便，且蚀刻完成后基板200无脱胶现象，不会受到损伤和沾污。
进一步地，上电极板上的通气孔被陶瓷覆盖。
通气孔长时间与制程气体接触，使用陶瓷覆盖通气孔，能避免通气孔被制程气体腐蚀，上电极板的寿命大大延长，无需经常更换，降低了生产成本。同时，通气孔的大小保持不变，也保证了制程气体通入干蚀刻设备100的量得到有效控制，提高了蚀刻结果的精确性。
请参考图3，在某些实施方式中，干蚀刻设备100包括机械手60，机械手60用于承载基板200进出反应腔50。
如此，压力传感器20检测到基板200发生损坏后，控制器30控制机械手60停止运行，避免了机械手60在搬运基板200过程中损坏的基板200会读其他未损坏基板200造成进一步损坏，减少了基板200的损坏率，保证了生产效益。同时，使用机械手60抓取基板200进出反应腔50还易于实现自动化生产，提高了生产效率，进而提高了生产利益。
请参考图4，在某些实施方式中，上电极板和下电极板40之间形成反应腔50，干蚀刻设备100包括多个反应腔50，多个反应腔50相互独立。
如此，当一个反应腔50内的压力传感器20检测到基板200发生损坏， 控制器30控制此反应腔50停止工作后，其他反应腔50仍然能继续工作，避免了一个基板200发生损坏干蚀刻设备100全部停止工作造成的产能下降的问题，提高了生产效率，增加了设备的稼动。
具体地，制程气体通入干蚀刻设备100后，在上电极板和下电极板40之间电压的作用下被激发成电浆。
如此，电浆对基板200上未被光阻覆盖的区域进行蚀刻，蚀刻产生的气体随气流带走，不会在基板200上留下痕迹，方便快捷。
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”、“顺时针”、“逆时针”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个以上，除非另有明确具体的限定。
在本发明中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触，或第一和第二特征通过中间媒介间接接触。而且，第一特征在第二特征“之上”、“上方”和“上面”可是第一特征 在第二特征正上方或斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方，或仅仅表示第一特征水平高度小于第二特征。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
尽管上面已经示出和描述了本发明的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本发明的限制，本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。

Claims (12)

  1. 一种干蚀刻设备，用于对设置在基板上的膜材进行蚀刻处理，其特征在于，所述干蚀刻设备包括：
    多根用于支撑所述基板不同位置的支撑柱；
    多个分别用于感测所述基板施加到对应的所述支撑柱上的压力的压力传感器；和
    用于处理所述压力传感器的输出以判断所述基板是否破碎的控制器。
  2. 如权利要求1所述的干蚀刻设备，其特征在于，所述多根支撑柱垂直支撑所述基板。
  3. 如权利要求1所述的干蚀刻设备，其特征在于，所述基板呈矩形，所述多根支撑柱分别支撑所述基板的边缘和中心部分。
  4. 如权利要求1所述的干蚀刻设备，其特征在于，所述干蚀刻设备包括下电极板，所述多根支撑柱可升降地设置在所述下电极板表面，
    所述控制器用于在取放所述基板时控制所述支撑柱升起以使所述基板升离所述下电极板和在蚀刻处理时控制所述支撑柱下降以使所述基板放置所述下电极板上。
  5. 如权利要求4所述的干蚀刻设备，其特征在于，所述控制器还用于检测所述压力传感器信号并在检测到所述压力传感器信号异常时控制所述支撑柱停止升降。
  6. 如权利要求4所述的干蚀刻设备，其特征在于，所述支撑柱与所述下电极板垂直设置。
  7. 如权利要求4所述的干蚀刻设备，其特征在于，所述支撑柱包括升起时与所述下电极板分离的上段，所述上段采用绝缘材料制成。
  8. 如权利要求4所述的干蚀刻设备，其特征在于，所述支撑柱包括与所述上段连接的下段，所述下段采用不锈钢支撑。
  9. 如权利要求1所述的干蚀刻设备，其特征在于，所述干蚀刻设备包括升降平台，所述支撑柱设置在所述升降平台上，所述压力传感器设置在对应的所述支撑柱和所述升降平台上，所述控制器用于控制所述升降平台升降以升降所述支撑柱。
  10. 如权利要求1所述的干蚀刻设备，所述干蚀刻设备包括下电极板和与所述下电极板相对的上电极板，所述上电极板上开设有通气孔，所述通气孔用于向所述干蚀刻设备中通入蚀刻气体，
    其特征在于，所述控制器用于检测所述压力传感器信号并在所述压力传感器信号异常时控制所述通气孔关闭。
  11. 如权利要求11所述的干蚀刻设备，其特征在于，所述干蚀刻设备包括机械手，所述机械手用于承载所述基板进出所述反应腔。
  12. 如权利要求1所述的干蚀刻设备，其特征在于，所述上电极板和所述下电极板之间形成反应腔，所述干蚀刻设备包括多个所述反应腔，所述多个反应腔相互独立。
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