WO2018084602A1 - Capteur de détection de gaz - Google Patents
Capteur de détection de gaz Download PDFInfo
- Publication number
- WO2018084602A1 WO2018084602A1 PCT/KR2017/012334 KR2017012334W WO2018084602A1 WO 2018084602 A1 WO2018084602 A1 WO 2018084602A1 KR 2017012334 W KR2017012334 W KR 2017012334W WO 2018084602 A1 WO2018084602 A1 WO 2018084602A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- quantum dot
- gas detection
- ligand
- detection sensor
- insulating layer
- Prior art date
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 22
- 239000002096 quantum dot Substances 0.000 claims abstract description 92
- 102000004129 N-Type Calcium Channels Human genes 0.000 claims abstract description 23
- 108090000699 N-Type Calcium Channels Proteins 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000003446 ligand Substances 0.000 claims description 22
- 230000007704 transition Effects 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 9
- 239000013110 organic ligand Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 2
- 229910015369 AuTe Inorganic materials 0.000 claims description 2
- 229910004613 CdTe Inorganic materials 0.000 claims description 2
- 229910002531 CuTe Inorganic materials 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 229910005540 GaP Inorganic materials 0.000 claims description 2
- 229910005542 GaSb Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910004262 HgTe Inorganic materials 0.000 claims description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- 241000764773 Inna Species 0.000 claims description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 2
- 229910002665 PbTe Inorganic materials 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- 229910005642 SnTe Inorganic materials 0.000 claims description 2
- 229910007709 ZnTe Inorganic materials 0.000 claims description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 8
- 238000009413 insulation Methods 0.000 abstract 2
- 230000005274 electronic transitions Effects 0.000 abstract 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 20
- 230000008859 change Effects 0.000 description 16
- 239000001569 carbon dioxide Substances 0.000 description 10
- 229910002092 carbon dioxide Inorganic materials 0.000 description 10
- 108091006146 Channels Proteins 0.000 description 8
- 239000010408 film Substances 0.000 description 5
- -1 Halogen ions Chemical class 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 3
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 3
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 3
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 3
- 239000005642 Oleic acid Substances 0.000 description 3
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 3
- HDFRDWFLWVCOGP-UHFFFAOYSA-N carbonothioic O,S-acid Chemical compound OC(S)=O HDFRDWFLWVCOGP-UHFFFAOYSA-N 0.000 description 3
- WOWHHFRSBJGXCM-UHFFFAOYSA-M cetyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)C WOWHHFRSBJGXCM-UHFFFAOYSA-M 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 3
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 3
- DPKBAXPHAYBPRL-UHFFFAOYSA-M tetrabutylazanium;iodide Chemical compound [I-].CCCC[N+](CCCC)(CCCC)CCCC DPKBAXPHAYBPRL-UHFFFAOYSA-M 0.000 description 3
- 238000007792 addition Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WQAQPCDUOCURKW-UHFFFAOYSA-N butanethiol Chemical compound CCCCS WQAQPCDUOCURKW-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- VDQVEACBQKUUSU-UHFFFAOYSA-M disodium;sulfanide Chemical compound [Na+].[Na+].[SH-] VDQVEACBQKUUSU-UHFFFAOYSA-M 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000001745 non-dispersive infrared spectroscopy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052979 sodium sulfide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- FRLRKOBIHDUBMS-UHFFFAOYSA-N tributylazanium;iodide Chemical compound [I-].CCCC[NH+](CCCC)CCCC FRLRKOBIHDUBMS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
Definitions
- a substrate, a gate electrode provided on the substrate, an insulating layer provided on the gate electrode, a source electrode and a drain electrode provided on the insulating layer, respectively Provided is a gas detection sensor including an n-type channel provided between an electrode and a drain electrode, and a quantum dot layer provided on the n-type channel and having an electron transition energy capable of resonance and resonance of a target gas molecule. do.
- the present invention provides a gas sensor 100, comprising a quantum dot layer 160 formed on the n-type channel.
- the quantum dot layer 160 is provided to have an electron transition energy in which vibration energy and resonance of the target gas (eg, carbon dioxide) molecules 170 may occur.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
La présente invention porte sur un capteur de détection de gaz. Selon un aspect, la présente invention concerne un capteur de détection de gaz comprenant : un substrat; une électrode de grille disposée sur le substrat; une couche d'isolation disposée sur l'électrode de grille; une électrode de source et une électrode de drain disposées sur la couche d'isolation; un canal de type n disposé entre l'électrode de source et l'électrode de drain; et une couche de points quantiques disposée sur le canal de type n et disposé de manière à avoir une énergie de transition électronique pouvant résonner avec l'énergie de vibration de molécules de gaz cibles.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201780067979.6A CN109906376B (zh) | 2016-11-02 | 2017-11-02 | 气体检测传感器 |
| EP17866955.2A EP3537140B1 (fr) | 2016-11-02 | 2017-11-02 | Utilisation d'un capteur de détection de gaz |
| US16/346,592 US10768137B2 (en) | 2016-11-02 | 2017-11-02 | Gas detecting sensor |
| JP2019520374A JP6908247B2 (ja) | 2016-11-02 | 2017-11-02 | ガス感知センサー |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2016-0144843 | 2016-11-02 | ||
| KR20160144843 | 2016-11-02 | ||
| KR10-2017-0145147 | 2017-11-02 | ||
| KR1020170145147A KR102126710B1 (ko) | 2016-11-02 | 2017-11-02 | 가스감지센서 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2018084602A1 true WO2018084602A1 (fr) | 2018-05-11 |
Family
ID=62076535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2017/012334 WO2018084602A1 (fr) | 2016-11-02 | 2017-11-02 | Capteur de détection de gaz |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2018084602A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI740325B (zh) * | 2018-12-28 | 2021-09-21 | 鴻海精密工業股份有限公司 | 氣體感測器及其製備方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030055346A (ko) * | 2000-12-11 | 2003-07-02 | 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 | 나노센서 |
| JP2009229341A (ja) * | 2008-03-25 | 2009-10-08 | Hiroshima Univ | バイオセンサーおよびその製造方法 |
| US20100019226A1 (en) * | 2006-09-22 | 2010-01-28 | Koninklijke Philips Electronics N.V. | Semiconductor sensor device, diagnostic instrument comprising such a device and method of manufacturing such a device |
| KR20150072888A (ko) * | 2013-12-20 | 2015-06-30 | 한국과학기술연구원 | 양자점 감응형 산화물 광감지 트랜지스터와 그 제조방법 |
| KR101616560B1 (ko) * | 2014-11-24 | 2016-04-28 | 한국과학기술연구원 | 나노프로브 융합 이온 감지 전계 효과 트랜지스터 바이오센서 |
-
2017
- 2017-11-02 WO PCT/KR2017/012334 patent/WO2018084602A1/fr unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030055346A (ko) * | 2000-12-11 | 2003-07-02 | 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 | 나노센서 |
| US20100019226A1 (en) * | 2006-09-22 | 2010-01-28 | Koninklijke Philips Electronics N.V. | Semiconductor sensor device, diagnostic instrument comprising such a device and method of manufacturing such a device |
| JP2009229341A (ja) * | 2008-03-25 | 2009-10-08 | Hiroshima Univ | バイオセンサーおよびその製造方法 |
| KR20150072888A (ko) * | 2013-12-20 | 2015-06-30 | 한국과학기술연구원 | 양자점 감응형 산화물 광감지 트랜지스터와 그 제조방법 |
| KR101616560B1 (ko) * | 2014-11-24 | 2016-04-28 | 한국과학기술연구원 | 나노프로브 융합 이온 감지 전계 효과 트랜지스터 바이오센서 |
Non-Patent Citations (1)
| Title |
|---|
| See also references of EP3537140A4 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI740325B (zh) * | 2018-12-28 | 2021-09-21 | 鴻海精密工業股份有限公司 | 氣體感測器及其製備方法 |
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