WO2018072054A1 - 一种柔性不锈钢衬底太阳能电池组件的全激光刻划方法 - Google Patents
一种柔性不锈钢衬底太阳能电池组件的全激光刻划方法 Download PDFInfo
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- WO2018072054A1 WO2018072054A1 PCT/CN2016/000716 CN2016000716W WO2018072054A1 WO 2018072054 A1 WO2018072054 A1 WO 2018072054A1 CN 2016000716 W CN2016000716 W CN 2016000716W WO 2018072054 A1 WO2018072054 A1 WO 2018072054A1
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- film
- zinc oxide
- molybdenum
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- 239000000758 substrate Substances 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 37
- 229910001220 stainless steel Inorganic materials 0.000 title claims abstract description 37
- 239000010935 stainless steel Substances 0.000 title claims abstract description 37
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 94
- 239000011787 zinc oxide Substances 0.000 claims abstract description 47
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 39
- 239000011733 molybdenum Substances 0.000 claims abstract description 39
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 26
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 36
- 241001270131 Agaricus moelleri Species 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000000835 fiber Substances 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 238000007493 shaping process Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000010329 laser etching Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000007650 screen-printing Methods 0.000 abstract description 5
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 abstract 1
- 238000007639 printing Methods 0.000 abstract 1
- 239000002002 slurry Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 36
- 239000010409 thin film Substances 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
- H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention belongs to the technical field of thin film solar cells, and in particular relates to a method for manufacturing a copper indium gallium selenide thin film solar cell module of a flexible stainless steel substrate.
- Copper indium gallium selenide thin film solar cells have become one of the most promising photovoltaic materials in thin film solar cells because of their adjustable optical band gap, strong radiation resistance, stable battery performance and poor light performance.
- Thin film solar cells can be classified into two types according to the classification of the substrate: a rigid substrate and a flexible substrate.
- the flexible substrate solar cell refers to a battery fabricated on a flexible material (for example, stainless steel, polyimide), and has the greatest advantage compared with a crystalline silicon battery or a glass substrate battery in that it is light in weight, bendable and not easily broken. Since the copper indium gallium selenide battery needs to undergo high temperature selenization above 500 yang, a flexible copper indium gallium selenide solar cell is generally prepared in the industry on a flexible stainless steel substrate. Copper indium gallium selenide solar cells with flexible stainless steel substrates are commonly used in the industry to screen out currents.
- the drawback of this method is that the dead zone area accounts for 7% of the entire battery, and the module efficiency loss is very high.
- the screen printing process is complicated. , the process repeatability is poor, it needs to consume a large amount of silver paste, and the cost is high; therefore, if we can apply the rigid substrate full laser scribing method (application number CN201510271942.8), the internal connection of the battery can avoid the screen printing. Defects; however, using a flexible stainless steel substrate, the P1 can be used to scribe the Mo layer. Since the stainless steel substrate is electrically conductive, insulation between the sub-cells cannot be formed.
- the innovative invention uses a layer of sputtering on the stainless steel substrate.
- the insulating layer is used to insulate the stainless steel and the back electrode Mo layer, and then the component is inscribed by the full laser scribing method, and in order to avoid damage to the insulating layer, all the scribing is performed by means of defocusing to avoid damage to the insulating layer;
- the full laser scribing method can achieve a processing speed of 2 to 3 m/s due to the laser repetition rate of 30 MHz to 1 GHz. Scribing spot is small, the width of the dead zone can be reduced to 200 ⁇ m or less, thus greatly reducing the power loss after the scoring assembly, and high efficiency, low production costs.
- the laser has the characteristics of stable operation and long life, thus reducing equipment maintenance costs and production costs.
- the laser repetition frequency reaches 30MHz ⁇ 1GHz
- the processing speed can reach 2 ⁇ 3m/s.
- the reticle width can be reduced, and the flanging and chipping phenomenon can be reduced or even eliminated, and the dead zone width can be reduced to below 200 ⁇ m. Therefore, the power loss of the component after scribing is greatly reduced, and the processing efficiency is high, the consumption of raw materials such as silver paste is reduced, and the production cost is low.
- the laser has the characteristics of stable operation and long life, thus reducing equipment maintenance costs.
- the invention provides a full laser scribing method for a flexible stainless steel substrate solar cell module, the method comprising the following steps:
- the layer is such that the sub-cells on both sides of the first reticle (P1) are completely insulated, and the insulating layer at the bottom is not damaged; the laser is focused by the focusing lens, expanded by a beam expander, and then passed through a laser shaping lens.
- the laser energy is shaped from a Gaussian distribution to a flat top distribution.
- the focusing lens is again focused to focus the laser to obtain a flat-top beam with uniformly distributed energy, and the molybdenum layer is cut by the flat-top beam; (4) Preparation of copper indium on the molybdenum layer Gallium selenide film layer;
- scribe line (P2) using laser 2 to scribe, intrinsically etch the intrinsic zinc oxide layer, the cadmium sulfide layer and the copper indium gallium selenide layer to expose the molybdenum layer to form a second scribe line (P2);
- the scribe line (P2) completely etches the intrinsic zinc oxide layer, the cadmium sulfide layer, and the copper indium gallium selenide three-layer film without damaging the surface of the molybdenum layer, the second scribe line (P2) and the first track
- the scribe line (P1) scribe line remains parallel;
- the laser 1, the laser 2, and the laser 3 may each adopt one of a nanosecond laser, a sub-nanosecond laser, or a picosecond laser.
- the nanosecond laser is a fiber laser
- the laser wavelength is one of 1064 nm, 532 nm, and 355 nm, or both of the wavelength modes
- the beam mode is TEM00
- the beam quality is M 2 .
- the pulse width is 1 nanosecond to 600 nanoseconds
- the single pulse energy is 1 microjoule to 2000 microjoule
- the pulse repetition frequency is 1 kHz to 1000 kHz
- the average power is 0 to 25 watts
- the sub-nanosecond laser is a semiconductor
- the laser has a laser wavelength of one of 1064 nm, 532 nm, and 355 nm, or has more than two wavelength modes.
- the Beam Mode is TEM00
- the beam quality (M 2 ) is ⁇ 1.3
- the pulse width is 600 picoseconds to 2000.
- Picosecond single pulse energy is 1 microjoule to 300 microjoule, pulse repetition frequency is 10KHz ⁇ 100KHz, average power is 0 ⁇ 3 watts;
- the picosecond laser is a fiber pulse laser, the laser wavelength is One of 1064 nm, 532 nm, and 355 nm, or both or more wavelength modes, Beam Mode is TEM00, beam quality (M 2 ) is ⁇ 1.3, pulse width is less than 10 picoseconds, and single pulse energy is 1 The micro-focus is ⁇ 40 microjoules, the pulse repetition frequency is 1 Hz to 1000 kHz, and the average power is 0-6 watts.
- a full laser scribing method for a copper indium gallium selenide thin film solar cell module according to the above flexible stainless steel substrate characterized in that the first scribe line (P1) is incident from the film surface or incident on the back surface
- the film surface incidence means that the laser beam is located in the direction of the film plating surface, and is focused by the focusing lens to the surface of the film;
- the back surface incidence means that the laser beam is located in the opposite direction of the coating surface;
- the insulating layer may be insulating silicon dioxide, silicon nitride, zinc oxide, aluminum oxide or aluminum nitride.
- the insulating layer has a thickness of 1.0 to 2.0 ⁇ m
- the molybdenum layer has a thickness of 600 nm to 1200 nm
- the copper indium gallium selenide layer has a thickness of 1.0 to 2.0
- the thickness of the cadmium sulfide layer is 30 to 80 nm
- the thickness of the intrinsic zinc oxide film is 50 to 150 nm
- the thickness of the aluminum-doped zinc oxide film is 300 to 1000 nm.
- a full laser scribing method for a large-area copper indium gallium selenide thin film solar cell module characterized in that the first scribe line (P1) is parallel to the edge of the stainless steel substrate, and the second scribe line ( P2) is parallel to P1, and the third scribe line (P3) is also parallel to P1; all parallels are implemented by an automatic optical tracking system;
- the invention adopts the full laser scribing method to realize the in-cell interconnection of the copper indium gallium selenide thin film solar cell module of the flexible stainless steel substrate, can effectively reduce the dead zone area of the component, and improve the component power of the copper indium gallium selenide thin film solar cell. Do not Screen printing in the traditional way is required to increase component production efficiency and reduce production and maintenance costs.
- FIG. 1 is a schematic structural view of a stainless steel substrate solar cell according to the present invention.
- FIG. 2 is a schematic view showing a full laser scribing method of a stainless steel substrate solar cell module according to the present invention
- Figure 3 is a schematic view of the P1 scribing of the present invention.
- Figure 4 is a schematic view of the P2 scribing of the present invention.
- Figure 5 is a schematic view of the P3 scribing of the present invention.
- Figure 7 is a top view of the P2 after the first embodiment
- FIG. 8 is a topographical view after P3 scribing in the first embodiment.
- FIG. 1 is a schematic structural view of a copper indium gallium selenide thin film solar cell of a flexible stainless steel substrate according to the present invention; as shown in FIG. 1, the battery includes a stainless steel substrate, an insulating layer, a molybdenum layer, a copper indium gallium selenide layer, and a cadmium sulfide layer. Intrinsic zinc oxide layer and aluminum-doped zinc oxide layer.
- the full laser scribing method comprises three laser scribings. First, an insulating layer and a molybdenum film are prepared on a flexible stainless steel substrate, and the prepared molybdenum film is cut by a laser to form a first pass.
- Line (P1) the first line engraves the molybdenum layer on the insulating layer, and can not damage the insulating layer;
- the laser is focused by the focusing lens, then expanded by a beam expander, and then passed through a laser shaping lens to laser The energy is shaped from a Gaussian distribution to a flat top distribution.
- the focusing lens is again focused to focus the laser, and a flat-top beam with even energy distribution is obtained to nick the molybdenum layer.
- the second (P2) and third (P3) scribes of the present application are subjected to the same laser shaping.
- the following film layers were sequentially prepared: copper indium gallium selenide film, cadmium sulfide film, intrinsic zinc oxide film, and laser 2 was used to form a second scribe line (P2), P2
- the engraved line is parallel to the P1 engraved line.
- the second engraved line completely removes the copper indium gallium selenide, the cadmium sulfide and the intrinsic zinc oxide above the molybdenum layer; and prepares the aluminum-doped zinc oxide on the P2 inscribed intrinsic zinc oxide layer.
- the method of fabricating the battery includes the following steps:
- Step 1 Preparation of an insulating layer on a flexible stainless steel substrate: An insulating intrinsic ZnO film was prepared on a stainless steel substrate by DC magnetron sputtering, and the film thickness was 1.5 ⁇ m.
- Step 2 preparing a molybdenum film: a Mo film is prepared on the surface of the insulating layer by DC magnetron sputtering, and the thickness of the film layer is 1 ⁇ m.
- Step 3 P1 scribing: using picosecond laser, pulse width 8 picoseconds, wavelength 1064nm, scoring power 3.0W, single pulse energy 37.5 ⁇ J, repetition frequency 80kHz, laser incident from the coating surface, sample P1 is scored and the scoring speed is 2m/s.
- the width of the scribe line is 41.51, and the schematic diagram of the scribe is as shown in Fig. 3.
- the Mo layer in the scribe line is completely removed to expose the surface of the insulating layer, and the insulating layer cannot be damaged at the same time.
- the effect diagram after scribing is shown in Figure 6.
- Step 4 preparing a copper indium gallium selenide film: a method of magnetron sputtering metal pre-film selenization is used to prepare a copper indium gallium selenide layer on the substrate on which the P1 is scribed, and the thickness of the film layer is 1 ⁇ m.
- Step 5 preparing a cadmium sulfide film: a cadmium sulfide layer is prepared on a deposited CIGS film by a chemical water bath method, and the thickness of the film layer is 50 nm.
- Step 6 Preparation of an intrinsic zinc oxide film: An intrinsic zinc oxide layer is prepared on a substrate on which a cadmium sulfide film is formed by a DC magnetron sputtering method, and the film layer has a thickness of 50 nm.
- Step 7 P2 scribing: picosecond laser with a pulse width of 8 picoseconds, a wavelength of 1064 nm with a scoring power of 5 W, a single pulse energy of 5 ⁇ J, and a repetition rate of 1000 kHz.
- the laser is incident from the coated surface, and the sample is subjected to P2 characterization.
- the scribing speed is 2m/s, and the width of the P2 line after scribing is 48 ⁇ m.
- the schematic diagram of the scribing is shown in Fig. 4.
- the intrinsic zinc oxide, cadmium sulfide and copper indium gallium selenide are completely cut off to expose the molybdenum layer.
- the effect diagram after scribing is shown in Figure 7.
- An automatic tracking system is used to ensure that the P2 line is parallel to the P1 line.
- Step 8 preparing an aluminum-doped zinc oxide film: using a magnetron sputtering method, an aluminum zinc oxide layer is prepared on the P2-etched substrate, and the film thickness is 800 nm.
- Step 9 P3 scribing: using a picosecond laser with a pulse width of 8 picoseconds, a wavelength of 1064 nm, a scoring power of 0.5 W, a single pulse energy of 7.14 uJ, and a repetition rate of 70 kHz.
- the laser is incident from the coated surface and the sample is subjected to a sample.
- P3 is scribed, the scoring speed is 2m/s, and the aluminum-doped zinc oxide layer, the intrinsic zinc oxide, the cadmium sulfide layer and the copper indium gallium selenide layer are completely cut to expose the molybdenum layer, and the component is characterized, and the scribing diagram is as follows. As shown in Fig. 5, the width of the scribe line is 40.59 ⁇ m, and the effect after scribing is as shown in Fig. 8. An automatic tracking system is used to ensure that the P3 line is parallel to the P1 line.
- an insulating layer is prepared on a flexible stainless steel substrate, and the details are the same as in the first embodiment.
- Step two the same as in Embodiment 1.
- Step 3 P1 scribing: using sub-nanosecond laser, pulse width of 800 picoseconds, wavelength of 532nm, scoring power of 2.7W, single pulse energy of 33.75uJ, repetition frequency of 80kHz, laser incident from the coating surface, on the sample
- the P1 was scored and the scoring speed was 2 m/s.
- the scribe line has a width of 40 strokes, the Mo layer in the reticle is completely removed to expose the surface of the insulating layer, and the insulating film cannot be damaged at the same time.
- Steps 4 to 9 are the same as in Embodiment 1.
- Step one is the same as in the first embodiment.
- Step two the same as in Embodiment 1.
- Step 3 P1 scribing: using a nanosecond laser with a pulse width of 100 nanoseconds, a wavelength of 532 nm, a scribing power of 3 W, a single pulse energy of 37.5 uJ, and a repetition rate of 80 kHz.
- the laser is incident from the coating surface and the sample is subjected to a sample.
- P1 is scored and the scoring speed is 2m/s.
- the width of the scribe line is 38, and the Mo layer is completely removed in the scribe line to expose the surface of the insulating layer without damaging the insulating film.
- Steps 4 to 9 are the same as in Embodiment 1.
- Steps 1 to 6 are the same as in Embodiment 1.
- Step 7 P2 scribing: sub-nanosecond laser with pulse width of 800 picoseconds, wavelength of 532 nm, scoring power of 0.4 W, single pulse energy of 1.2 uJ, repetition frequency of 500 kHz, laser incident from the coating surface, sample The P2 scribe was performed, the scribing speed was 2 m/s, and the P2 scribe line width after scribing was 48 ⁇ m. The intrinsic zinc oxide, cadmium sulfide and copper indium gallium selenide of the battery were completely cut after scribing to expose the molybdenum layer. An automatic tracking system is used to ensure that the P2 line is parallel to the P1 line.
- Steps 7 to 9 are the same as in Embodiment 1.
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Abstract
一种柔性不锈钢衬底太阳能电池组件的全激光刻划方法,在柔性不锈钢衬底上依次制备绝缘层和钼层;使用激光器一对已经制备的绝缘层和钼层进行刻划,形成第一道刻线(P1);在完成P1刻划的钼层上依次进行以下膜层制备:铜铟镓硒层、硫化镉层、本征氧化锌层,完成上述膜层制备后,使用激光器二进行刻划,形成第二道刻线(P2),P2刻线与P1刻线平行;在完成P2刻划的本征氧化锌层上制备掺铝氧化锌层,使用激光器三进行刻划,形成第三道刻划线(P3),P3刻线与P1刻线平行。可以避免丝网印刷造成的死区面积大、丝网印刷浆料昂贵以及丝网印刷网版经常更换等弊端,从而提高组件效率和设备稳定性,达到降低成本、提高生产效率的目的。
Description
本发明属于薄膜太阳能电池技术领域,尤其涉及柔性不锈钢衬底铜铟镓硒薄膜太阳能电池组件制造方法。
能源危机和环境污染是当今全球所面临的两大基本问题。太阳能取之不尽、用之不竭,是解决能源危机的一种重要途径。铜铟镓硒薄膜太阳能电池因为其材料光学带隙可调、抗辐射能力强、电池性能稳定、弱光性好等优点,使之成为薄膜太阳能电池中最有发展前景的光伏材料之一。
薄膜太阳能电池按照基底分类可以分为刚性基底和柔性基底两大类。其中,柔性衬底太阳能电池指在柔性材料(例如不锈钢、聚酰亚胺)上制作的电池,与晶硅电池、玻璃基底的电池相比较最大的优点是重量轻,可弯曲折叠且不易破碎。由于铜铟镓硒电池需要经过500阳以上的高温硒化,业内普遍采用的是在柔性不锈钢基底上制备柔性铜铟镓硒太阳能电池。柔性不锈钢基底的铜铟镓硒太阳能电池业内普遍采用丝网印刷的方式将电流引出,该方式的缺陷是死区面积占到整个电池的7%,组件效率损失非常高;同时丝网印刷工艺复杂,工艺重复性差,需要消耗大量的银浆,成本高昂;因此如果能够采用我司之前申请刚性基底全激光刻划的方式(申请号CN201510271942.8)进行电池内部串联就可以避免丝网印刷带来的缺陷;但是采用柔性不锈钢衬底,P1刻划后能够将Mo层刻断,由于不锈钢基底是导电的,故不能形成子电池间的绝缘;本发明创新的采用在不锈钢基底上溅射一层绝缘层,使不锈钢和背电极Mo层绝缘,然后采用全激光的刻划方式实现组件内联,同时为了避免将绝缘层损伤,所有刻划均采用离焦的方式避免将绝缘层损伤;所述的全激光刻划方法由于激光器重复频率可在30MHz~1GHz,因此加工速度可达2~3m/s,激光刻划斑点小,能够将死区宽度降至200μm以下,因此大大减小了刻划后的组件功率损失,并且加工效率高,生产成本低。另外,激光器具有运行稳定,寿命长等特点,因此降低了设备维护成本和生产成本。
发明内容
本发明的目的在于提供一种柔性不锈钢衬底太阳能电池组件的全激光刻划方法完成铜铟镓硒薄膜太阳能电池的全部三道刻划,实现太阳能电池组件的子电池内联。由于激光器重复频率达到30MHz~1GHz,因此加工速度可达2~3m/s,通过对激光聚焦可以减小刻线宽度,减小甚至消除翻边和崩边现象,将死区宽度降至200μm以下,因此大大减少了刻划后的组件功率损失,并且加工效率高、降低对银浆等原材料的消耗,生产成本低。另外,激光器具有运行稳定,寿命长等特点,因此降低了设备维护成本。
本发明提供的一种柔性不锈钢衬底太阳能电池组件的全激光刻划方法,所述方法包括以下步骤:
(1)在柔性不锈钢基底上制备绝缘层;
(2)在绝缘层上制备钼层;
(3)采用激光器一对钼层进行刻划,将钼层完全刻断,形成第一道刻线(P1);所述第一道刻线(P1)一直刻划绝缘层表面并且不能损伤绝缘层,使第一道刻线(P1)两侧的子电池完全绝缘,同时不能损伤底部的绝缘层;激光通过聚焦透镜进行聚焦后,经过扩束镜进行扩束,然后经过激光整形透镜,将激光能量从高斯分布整形为平顶分布,最后再次进行聚焦透镜将激光聚焦,得到能量均匀分布的平顶光束,利用该平顶光束将钼层刻断;(4)在钼层上制备铜铟镓硒膜层;
(5)在铜铟镓硒膜层上制备硫化镉层;
(6)在硫化镉层上制备本征氧化锌层;
(7)采用激光器二进行刻划,将本征氧化锌层、硫化镉层以及铜铟镓硒层同时刻断,露出钼层,形成第二道刻线(P2);所述的第二道刻线(P2)将本征氧化锌层、硫化镉层、以及铜铟镓硒层三层薄膜完全刻断,并且不损伤钼层表面,所述第二道刻线(P2)与第一道刻线(P1)刻线保持平行;
(8)在本征氧化锌层上制备掺铝氧化锌层;
(9)采用激光器三进行刻划,将掺铝氧化锌层、本征氧化锌层、硫化镉层以及铜铟镓硒层同时刻断,露出钼层,形成第三道刻线(P3),从而完成铜铟镓硒薄膜太阳能电池组件子电池的内联;所述P3刻线需要将掺铝氧化锌层、本征氧化锌层、硫化镉层、以及铜铟镓硒层四层薄膜完全刻断,并且不损伤钼层表面;所述第三道(P3)和第一道刻线(P1)、第二道刻线(P2)保持平行。
根据上述的一种柔性不锈钢衬底太阳能电池组件的全激光刻划方法,所述的激光器一、
激光器二、激光器三均可以采用纳秒激光器、亚纳秒激光器或者皮秒激光器中的一种或者多种;其中所述纳秒激光器为光纤脉冲激光器,激光波长为1064nm、532nm和355nm中的一种,或者兼具两种以上波长模式,光束模式(Beam Mode)为TEM00,光束质量(M2)<1.3,脉冲宽度为1纳秒~600纳秒,单脉冲能量为1微焦~2000微焦,脉冲重复频率为1KHz~1000KHz,平均功率0~25瓦特;所述亚纳秒激光器为半导体激光器,激光波长为1064nm、532nm和355nm中的一种,或者兼具两种以上波长模式,光束模式(Beam Mode)是TEM00,光束质量(M2)<1.3,脉冲宽度为600皮秒~2000皮秒,单脉冲能量为1微焦~300微焦,脉冲重复频率为10KHz~100KHz,平均功率为0~3瓦特;所述皮秒激光器为光纤脉冲激光器,激光波长为1064nm、532nm和355nm中的一种,或者兼具两种以上波长模式,光束模式(Beam Mode)是TEM00,光束质量(M2)<1.3,脉冲宽度为小于10皮秒,单脉冲能量为1微焦~40微焦,脉冲重复频率为1Hz~1000KHz,平均功率为0~6瓦特。
根据上述的一种柔性不锈钢基底的铜铟镓硒薄膜太阳能电池组件的全激光刻划方法,其特征在于,所述的第一道刻线(P1)采用从膜面入射的方式或者背面入射的方式;所述膜面入射是指激光光束位于薄膜镀面的方向,通过聚焦透镜聚焦到薄膜表面;所述背面入射是指激光光束位于镀膜面的反方向;
根据上述的一种柔性不锈钢基底太阳能电池组件的全激光刻划方法,其特征在于,所述的第二道刻线(P2)采用从膜面入射的方式。
根据上述的一种柔性不锈钢基底太阳能电池组件的全激光刻划方法,其特征在于,所述的第三道刻线(P3)采用从膜面入射的方式。
根据上述的一种柔性不锈钢基底太阳能电池组件的全激光刻划方法,其特征在于,所述所述的绝缘层可以是绝缘的二氧化硅、氮化硅、氧化锌、氧化铝、氮化铝等氧化物或氮化物材料中的一种或者多种;所述绝缘层的厚度1.0~2.0微米;所述钼层厚度为600纳米~1200纳米;所述铜铟镓硒层厚度为1.0~2.0微米;所述硫化镉层厚度为30~80纳米;所述本征氧化锌薄膜厚度为50~150纳米;所述掺铝氧化锌薄膜厚度为300~1000纳米。
根据上述的一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法,其特征在于,所述第一道刻线(P1)与不锈钢基体边缘平行,所述第二道刻线(P2)与P1平行,所述第三道刻线(P3)也与P1平行;所有的平行均采用自动光学追踪***实现;
本发明采用全激光刻划的方式实现对柔性不锈钢衬底的铜铟镓硒薄膜太阳能电池组件的子电池内联,可有效降低组件死区面积,提高铜铟镓硒薄膜太阳能电池的组件功率,不
需要传统方式的丝网印刷,提高了组件生产效率,降低了生产和维护成本。
图1为本发明所述的不锈钢衬底太阳能电池的结构示意图;
图2为本发明所述的不锈钢衬底太阳能电池组件的全激光刻划方法示意图;
图3为本发明所述的P1刻划的示意图;
图4为本发明所述的P2刻划的示意图;
图5为本发明所述的P3刻划的示意图;
图6为实施例一中P1刻划后的形貌图;
图7为实施例一中P2刻划后的形貌图;
图8为实施例一中P3刻划后的形貌图。
以下结合实施案例以及说明书附图对本发明的技术方案作进一步地说明。
实施例1
图1为本发明所述的柔性不锈钢衬底的铜铟镓硒薄膜太阳能电池结构示意图;如图1所示,该电池包括不锈钢基底、绝缘层、钼层、铜铟镓硒层、硫化镉层、本征氧化锌层以及掺铝氧化锌层。
图2为本发明所述的一种柔性不锈钢衬底的铜铟镓硒薄膜太阳能电池的全激光刻划的结构示意图。如图2所示,该全激光刻划方法包含三道激光刻划,首先在柔性不锈钢基底上制备绝缘层和钼膜,使用激光器一将已经制备好的钼膜刻断,形成第一道刻线(P1),第一道刻线将绝缘层上的钼层刻断,同时不能损伤绝缘层;激光通过聚焦透镜进行聚焦后,经过扩束镜进行扩束,然后经过激光整形透镜,将激光能量从高斯分布整形为平顶分布,最后再次进行聚焦透镜将激光聚焦,得到能量均匀分布的平顶光束对钼层进行刻断。
本申请优选以下第二道(P2)和第三道(P3)刻划均经过相同的激光整形。
在完成P1刻划的钼层上依次进行以下膜层制备:铜铟镓硒薄膜、硫化镉薄膜、本征氧化锌薄膜,使用激光器二进行刻划,形成第二道刻线(P2),P2刻线与P1刻线平行,第二道刻线将钼层以上的铜铟镓硒、硫化镉以及本征氧化锌完全清除;在完成P2刻划的本征氧化锌层上制备掺铝氧化锌层,使用激光器三进行刻划,形成第三道刻划线(P3),P3刻线与P1刻线平行,第三道激光刻划将钼层以上的铜铟镓硒、硫化镉、本征氧化锌以及掺铝氧化锌完全清除。
根据本发明,该电池的制作方法包括以下的步骤:
步骤一,在柔性不锈钢基底上制备绝缘层:采用直流磁控溅射的方法在不锈钢基底上制备绝缘本征ZnO膜,膜层厚度为1.5μm。
步骤二,制备钼膜:采用直流磁控溅射的方法在绝缘层表面制备Mo膜,膜层的厚度为1μm。
步骤三,P1刻划:采用皮秒激光器,脉冲宽度8皮秒,波长为1064nm,刻划功率为3.0W,单脉冲能量为37.5μJ,重复频率为80kHz,激光从镀膜面入射,对样品进行P1刻划,刻划速度为2m/s。刻划后刻线的宽度为41.51的宽,,刻划的示意图如图3所示刻线内Mo层被完全清除,露出绝缘层表面,同时不能损伤绝缘层。刻划后的效果图如图6所示。
步骤四,制备铜铟镓硒薄膜:采用磁控溅射金属预置膜后硒化的方法,在完成P1刻划的基片上制备铜铟镓硒层,膜层的厚度为1μm。
步骤五,制备硫化镉薄膜:采用化学水浴法,在沉积CIGS薄膜上制备硫化镉层,膜层的厚度为50nm。
步骤六,制备本征氧化锌薄膜:采用直流磁控溅射的方法,在完成硫化镉薄膜的基片上制备本征氧化锌层,膜层的厚度为50nm。
步骤七,P2刻划:皮秒激光器,脉冲宽度为8皮秒,波长为1064nm刻划功率为5W,单脉冲能量为5μJ,重复频率为1000kHz,激光从镀膜面入射,对样品进行P2刻划,刻划速度为2m/s,刻划后的P2刻线宽度为48μm,刻划的示意图如图4所示,电池本征氧化锌、硫化镉以及铜铟镓硒完全刻断,露出钼层,刻划后的效果图如图7所示。采用自动追踪***保证P2划线与P1划线平行。
步骤八,制备掺铝氧化锌薄膜:采用磁控溅射方法,在完成P2刻划的基片上制备铝氧化锌层,膜层厚度为800nm。
步骤九,P3刻划:采用皮秒激光器,脉冲宽度为8皮秒,波长为1064nm,刻划功率为0.5W,单脉冲能量7.14uJ,重复频率为70kHz,激光从镀膜面入射,对样品进行P3刻划,刻划速度为2m/s,将掺铝氧化锌层,本征氧化锌,硫化镉层以及铜铟镓硒层完全刻断,露出钼层,完成组件刻划,刻划示意图如图5所示,刻线的宽度为40.59μm,刻划后的效果如图8所示。采用自动追踪***保证P3划线与P1划线平行。
实施例2
步骤一,在柔性不锈钢基底上制备绝缘层,具体内容与实施例1相同。
步骤二,与实施例1相同
步骤三,P1刻划:采用亚纳秒激光器,脉冲宽度800皮秒,波长为532nm,刻划功率为2.7W,单脉冲能量为33.75uJ,重复频率为80kHz,激光从镀膜面入射,对样品进行P1刻划,刻划速度为2m/s。刻划后刻线的宽度为40划后,刻线内Mo层被完全清除,露出绝缘层表面,同时不能损伤绝缘薄膜。
步骤四~步骤九,与实施例1相同。
实施例3
步骤一,与实施例1相同。
步骤二,与实施例1相同
步骤三,P1刻划:采用纳秒激光器,脉冲宽度100纳秒,波长为532纳米,刻划功率为3W,单脉冲能量为37.5uJ,重复频率为80kHz,激光从镀膜面入射,对样品进行P1刻划,刻划速度为2m/s。刻划后刻线的宽度为38后划,刻线内Mo层被完全清除,露出绝缘层表面,同时不能损伤绝缘薄膜。
步骤四~步骤九,与实施例1相同。
实施例4
步骤一~步骤六,与实施例1相同。
步骤七:P2刻划:亚纳秒激光器,脉冲宽度为800皮秒,波长为532nm,刻划功率为0.4W,单脉冲能量为1.2uJ,重复频率为500kHz,激光从镀膜面入射,对样品进行P2刻划,刻划速度为2m/s,刻划后的P2刻线宽度为48μm,刻划后电池的本征氧化锌、硫化镉以及铜铟镓硒完全刻断,露出钼层。采用自动追踪***保证P2划线与P1划线平行。
步骤七~步骤九,与实施例1相同。
尽管本发明的内容已经通过上述优选实施例作了详细的介绍,但应当认识到上述的描述不应该被认为是本发明的限制。本领域技术人员阅读了上述内容后,对于本发明的多种修改和替代都将是显而易见的。因此,本发明的保护范围应由所附的权利要求来限定。
Claims (10)
- 一种柔性不锈钢衬底太阳能电池组件的全激光刻划方法,其特征在于:在不锈钢衬底上制备绝缘层,在绝缘层上制备钼薄膜即钼层,使用激光器对在不锈钢衬底上制备的绝缘薄膜和钼薄膜进行刻划,形成第一道刻线(P1);在完成第一道刻线(P1)刻划的钼层上依次进行以下膜层制备:铜铟镓硒层、硫化镉层、本征氧化锌层,完成上述膜层制备后,使用激光器进行刻划,形成第二道刻线(P2);在完成第二道刻线(P2)刻划后的本征氧化锌层上制备掺铝氧化锌层,使用激光器再次进行刻划,形成第三道刻线(P3)。
- 一种柔性不锈钢衬底太阳能电池组件的全激光刻划方法,其特征在于,所述方法包括以下步骤:(1)在柔性不锈钢衬底上制备绝缘层;所述的绝缘层可以是绝缘的二氧化硅、氮化硅、氧化锌、氧化铝、氮化铝等氧化物或氮化物材料中的一种或者多种;所述的绝缘层完全覆盖住不锈钢基底;(2)在绝缘层上制备钼层;(3)采用激光器一对钼层进行刻划,将钼层完全刻断,形成第一道刻线(P1);所述第一道刻线(P1)一直刻划到绝缘层表面,使第一道刻线(P1)两侧的子电池完全绝缘,同时对绝缘层不能造成损伤;其中,将激光器一发出的激光通过聚焦透镜进行聚焦后,再经过扩束镜进行扩束,然后经过激光整形透镜,将激光能量从高斯分布整形为平顶分布,最后再次进行聚焦透镜将激光聚焦,得到能量均匀分布的平顶光束,利用该平顶光束将钼层刻断;(4)在钼层上制备铜铟镓硒膜层;(5)在铜铟镓硒膜层上制备硫化镉膜层;(6)在硫化镉膜层上制备本征氧化锌膜层;(7)采用激光器二进行刻划,将本征氧化锌层、硫化镉层以及铜铟镓硒层同时刻断,露出钼层,形成第二道刻线(P2);所述的第二道刻线(P2)将本征氧化锌层、硫化镉层以及铜铟镓硒层三层薄膜完全刻断,并且不损伤钼层表面;所述第二道刻线(P2)与第一道刻线(P1)刻线保持平行;(8)在本征氧化锌层上制备掺铝氧化锌层;(9)采用激光器三进行刻划,将掺铝氧化锌层、本征氧化锌层、硫化镉层以及铜铟镓硒层同时刻断,露出钼层,形成第三道刻线(P3),从而完成太阳能电池组件子电池的内 联;所述P3刻线需要将掺铝氧化锌层、本征氧化锌层、硫化镉层、以及铜铟镓硒层四层薄膜完全刻断,并且不损伤钼层表面;所述第三道(P3)和第一道刻线(P1)、第二道刻线(P2)保持平行。
- 根据权利要求2所述的全激光刻划方法,其特征在于:所述的激光器一、激光器二、激光器三均为纳秒激光器、亚纳秒激光器或者皮秒激光器中的一种。
- 根据权利要求3所述的全激光刻划方法,其特征在于:其中所述纳秒激光器为光纤脉冲激光器,激光波长为1064nm、532nm和355nm中的一种,或者兼具两种以上波长模式,光束模式为TEM00,光束质量<1.3,脉冲宽度为1纳秒~600纳秒,单脉冲能量为1微焦~2000微焦,脉冲重复频率为1KHz~1000KHz,平均功率0~25瓦特;所述亚纳秒激光器为半导体激光器,激光波长为1064nm、532nm和355nm中的一种,或者兼具两种以上波长模式,光束模式是TEM00,光束质量<1.3,脉冲宽度为600皮秒~2000皮秒,单脉冲能量为1微焦~300微焦,脉冲重复频率为10KHz~100KHz,平均功率为0~3瓦特;所述皮秒激光器为光纤脉冲激光器,激光波长为1064nm、532nm和355nm中的一种,或者兼具两种以上波长模式,光束模式是TEM00,光束质量<1.3,脉冲宽度为小于10皮秒,单脉冲能量为1微焦~40微焦,脉冲重复频率为1Hz~1000KHz,平均功率为0~6瓦特。
- 根据权利要求2所述的全激光刻划方法,其特征在于:所述的第一道刻线(P1)采用从膜面入射的方式或者背面入射的方式;所述激光从膜面入射是指激光光束位于薄膜镀面的方向,通过聚焦透镜聚焦到薄膜表面;所述的背面入射是指激光束位于薄膜镀面的反方向,通过聚焦透镜聚焦到不锈钢基底,通过热传导的方式实现切割;
- 根据权利要求2所述的全激光刻划方法,其特征在于:所述的第二道刻线(P2)、第三道刻线(P3)均采用从膜面入射的方式;所述激光从膜面入射是指激光光束位于薄膜镀面的方向,通过聚焦透镜聚焦到薄膜表面。
- 根据权利要求2所述的全激光刻划方法,其特征在于:在步骤(1)中,所述绝缘层可以是二氧化硅、氮化硅、氧化锌、氧化铝、氮化铝等氧化物或氮化物材料中的一种或者多种形成的电绝缘性薄膜;所述的绝缘层厚度为1000纳米~2000纳米。
- 根据权利要求2所述的全激光刻划方法,其特征在于:在步骤(2)中,所述钼层厚度为600纳米~1200纳米。
- 根据权利要求2或7任一项权利要求所述的全激光刻划方法,其特征在于:在步骤(4)中,所述铜铟镓硒层厚度为1.0~2.0微米;在步骤(5)中,所述硫化镉层厚度为30~80纳米;在步骤(6)中,所述本征氧化锌膜层厚度为50~150纳米。
- 根据权利要求2或8任一项权利要求所述的全激光刻划方法,其特征在于:在步骤(8)中,掺铝氧化锌膜层厚度为300~1000纳米。
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