WO2018054470A1 - Composant micromécanique - Google Patents

Composant micromécanique Download PDF

Info

Publication number
WO2018054470A1
WO2018054470A1 PCT/EP2016/072575 EP2016072575W WO2018054470A1 WO 2018054470 A1 WO2018054470 A1 WO 2018054470A1 EP 2016072575 W EP2016072575 W EP 2016072575W WO 2018054470 A1 WO2018054470 A1 WO 2018054470A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
mems
asic
micromechanical
layer
Prior art date
Application number
PCT/EP2016/072575
Other languages
German (de)
English (en)
Inventor
Markus Ulm
Johannes Classen
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to PCT/EP2016/072575 priority Critical patent/WO2018054470A1/fr
Publication of WO2018054470A1 publication Critical patent/WO2018054470A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00238—Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure

Definitions

  • the invention relates to a micromechanical component and to a method for producing a micromechanical component.
  • Micromechanical sensors for measuring, for example, acceleration, rate of rotation, magnetic field and pressure are known and are mass-produced for various applications in the automotive and consumer sectors.
  • a z-acceleration sensor is realized in which the movable mass of two micromechanical layers (first and second MEMS functional layer) is formed and in which both below and above the movable structure capacitive evaluation electrodes are arranged, namely in
  • a movable MEMS structure is arranged on an evaluation ASIC, preferably a CMOS wafer, wherein the uppermost metal layer of the ASIC as a solid
  • evaluation electrodes are provided in the MEMS wafer, as is known, for example, from DE 10 2012 208 032 A1.
  • an integration density in this case a capacitance per area of the components can be increased, which can lead to reduced noise and / or a smaller area requirement for the components.
  • DE 10 2012 208 032 A1 also discloses an arrangement having two micromechanical layers, which are linked to a vertical integration process.
  • the MEMS wafer is produced surface micromechanically and is mechanically and electrically connected to an ASIC by means of a wafer bonding process.
  • the MEMS wafer has three polycrystalline silicon layers (one wiring level and two micromechanical layers), which can be structured largely independently of one another.
  • the MEMS wafer thereby comprises two micromechanical functional layers and one interconnect plane.
  • the two micromechanical functional layers are connected to one another and form a one-piece or integral mass element.
  • through-holes through silicon, TSV
  • DE 10 2009 029 202 A1 discloses a stacked arrangement of micromechanical components comprising a plurality of MEMS layers, in which a first MEMS structure in a functional layer and at least one further MEMS structure are arranged at least partially in at least one further functional layer.
  • Such structures in which also the integration view is increased, can be realized by means of a process which is known from DE 10 2009 000 167 A1.
  • Waferstapel be bonded together, wherein both wafer composites are formed by a MEMS wafer and a CMOS wafer, such as
  • a support is provided, in particular in the form of an ASIC, a MEMS and a cap.
  • the MEMS device is mounted on the carrier via a standoff structure, wherein the cap is disposed over the micromechanical structure of the MEMS device.
  • the object is achieved with a method for producing a micromechanical device, comprising the steps:
  • connection elements Forming electrically conductive connection elements in the MEMS wafer, wherein the connection elements penetrate the at least two fixed or movable structures in the MEMS wafer and are formed as far as the ASIC wafer;
  • MEMS functional layers are provided, which are either electrically and mechanically connected to each other or only mechanically interconnected. This provides the advantageous option of selectively electrically activating the movable structures of the MEMS layers as electrodes.
  • the object is achieved with a
  • Micromechanical component comprising:
  • a MEMS wafer having at least two solid or movable MEMS structures arranged one above another at least in sections, an ASIC wafer, wherein
  • the MEMS wafer is functionally connected to the ASIC wafer, wherein at least one electrically conductive connection element penetrating the two MEMS structures is formed as far as the ASIC wafer, the wafers being capped by means of a cap wafer.
  • a preferred embodiment of the method provides that the formation of the electrical connection elements is carried out by means of introducing at least one layer of conductive material into contact holes.
  • Another preferred embodiment of the method is characterized in that tungsten is used as the conductive material. This results in favorable material and processing properties.
  • a further preferred embodiment of the method provides that a bonding of the ASIC wafer to the MEMS wafer is carried out after the at least partial structuring of the MEMS wafer.
  • the MEMS wafer can first be completely surface micromechanically structured. This allows structuring of bonding steps
  • FIG. 2 shows another conventional micromechanical sensor topology
  • FIG. 3-24 results of individual process steps for producing the micromechanical component according to the invention
  • Fig. 1 shows a result of a conventional standard process for
  • a movable MEMS structure 14 is formed in a monocrystalline MEMS functional layer of a MEMS wafer. It will be appreciated that the moveable MEMS structure 14 is disposed on oxide material stand-off elements on an ASIC wafer 20.
  • a cap wafer 30 seals the arrangement of the MEMS structure 14 on the ASIC wafer 20.
  • FIG. 2 shows a cross section through a further conventional micromechanical component 100 with a MEMS wafer 10 and an ASIC wafer 20.
  • Movable micromechanical MEMS structures 14, 15 are formed in the MEMS wafer 10.
  • RDL distribution layer
  • FIGS. 3 to 25 show results of process steps for producing embodiments of the micromechanical component 10 according to the invention.
  • FIG. 3 shows a simplified cross section through a CMOS wafer, which represents an initial state for an ASIC wafer 20. Recognizable are one Substrate layer 21, a circuit layer 22 and a transistor layer 23. On the ASIC wafer 20, a passivation layer 24 is arranged, for example in the form of a nitride passivation.
  • FIG. 4 shows the cross-section of FIG. 3, wherein the passivation layer 24 has been opened or structured.
  • FIG. 5 it can be seen that an oxide material 40 for spacers has been deposited on the structured passivation layer 24.
  • FIG. 6 shows a structuring of the oxide material 40 in the form of a formation of spacer elements which serve as contact surfaces for subsequent wafer-direct bonding.
  • FIG. 7 shows a cross section through a MEMS wafer 10 with a first substrate layer 11 (preferably a silicon substrate), an insulation layer 12 (preferably an oxide material) disposed thereon and one on the first substrate layer 11 (preferably a silicon substrate), an insulation layer 12 (preferably an oxide material) disposed thereon and one on the first substrate layer 11 (preferably a silicon substrate), an insulation layer 12 (preferably an oxide material) disposed thereon and one on the first substrate layer 11 (preferably a silicon substrate), an insulation layer 12 (preferably an oxide material) disposed thereon and one on the
  • Insulation layer 12 arranged second substrate layer 13 (preferably silicon substrate).
  • the MEMS wafer 10 is thus formed in its basic structure by an SOI wafer.
  • FIG. 8 shows a cross section through the arrangement of FIG. 7, wherein now a first trench of the second substrate layer 13 has been carried out.
  • material of the insulating layer 12 was etched out below the structure of the second substrate layer 13 by means of a gas phase etching step.
  • FIG. 10 indicates that a filling of the opened access holes with a conductive material 16, preferably poly-silicon was performed. Alternatively conceivable is also a metallic backfilling, for example with tungsten. In this way, the first substrate layer 11 can be electrically conductively connected to the second substrate layer 13 in a locally limited manner.
  • FIG. 1 1 indicates that a smooth surface of the second substrate layer 13 is provided for a subsequent wafer bonding by means of a CMP process step (English: chemical mechanical polishing). From the cross-sectional view of FIG. 12, it can be seen that a second trench of the second substrate layer 13 has been implemented, whereby a structure in the first substrate layer 13 has been realized.
  • FIG. 13 shows a cross section of the MEMS wafer 10 after a second gas phase etching step of the insulation layer 12, whereby the insulation layer 12 has been locally released.
  • the second gas phase etching step is preferably timed.
  • FIG. 14 shows the MEMS wafer 10 of FIG. 13 rotated by 180 ° before a wafer bonding with the ASIC wafer 20.
  • FIG. 15 shows a result of wafer bonding of the MEMS wafer 10 to the ASIC wafer 20, preferably in the form of a plasma-activated direct bonding process.
  • FIG. 16 shows a result of loopback and possibly a CMP step of the first substrate layer 11 to target thickness, preferably to about 5 ⁇ m to about 100 ⁇ m.
  • FIG. 17 shows a result of a first trenching of the first substrate layer 11 for applying contact holes 17 in the first substrate layer 11.
  • FIG. 18 shows a patterning of the conductive material 18, as a result of which electrically conductive connections ("conductive posts") through the two
  • Substrate layers 1 1, 13 and an electrically conductive connection to structures of the ASIC wafer 20 are provided.
  • FIG. 20 shows a cross-section through the arrangement of FIG. 19 after trenching of the first substrate layer 11 for a final definition and release of the MEMS structures 14, 15. In this case, also accessible partial regions of the second substrate layer 13 are trimmed.
  • Fig. 21 indicates that MEMS regions are made movable.
  • the figure serves to illustrate that, similar to FIG. 2, movable MEMS structures 14, 15 with a fully differential electrode arrangement, with an upper fixed electrode in the first substrate layer 11 and a lower fixed electrode in an uppermost metallization plane of the ASIC Wafers 20 can be realized.
  • FIG. 22 shows a finished micromechanical component 100, wherein a bonding of a cap wafer 30 to the ASIC wafer 20 is performed. Subsequently, the cap wafer 30 is opened in a bonding pad area and a wire bonding to an external contacting of the micromechanical
  • Device 100 performed. Visible is an external contacting element 50 in the form of a bonding wire.
  • FIG. 23 shows an alternative form of a micromechanical device 100, in which case the cap wafer 30 is bonded to the MEMS wafer 10.
  • Fig. 24 shows a further embodiment of the micromechanical
  • Component 100 with an alternative external electrical contacting by means of plated-through holes 60 in ASIC wafer 20 is also conceivable (not shown) is external electrical contacting via plated-through holes 60 in cap wafer 30.
  • plated-through holes 60 with additional redistribution in the form of a distribution plane (FIG. Engl, redistribution layer, RDL) together with contacting elements 50 in the form of solder balls an electrical contacting of circuit elements of the ASIC wafer 20 can be realized.
  • FIGS. 25 to 31 show an alternative realization of the MEMS wafer 10, in which a surface micromechanical process is carried out for its production.
  • the starting point is a first substrate layer 11, to which an insulation layer 12, preferably an oxide layer, is preferably applied via thermal oxidation.
  • an insulation layer 12 preferably an oxide layer
  • the grown second micromechanical layer is predominantly polycrystalline in this case.
  • Fig. 26 shows an opened insulation layer 12 for forming contact holes.
  • Fig. 27 shows a deposition of a second substrate layer 13 on the
  • Insulation layer 12 either as polycrystalline silicon or epitaxial growth (with a polycrystalline starting layer on the
  • a strong topography of the surface of the second substrate layer 13 is formed. This can optionally be minimized by means of a multiplicity of small contact holes, in which a trench width is smaller than the layer thickness of the second substrate layer 13.
  • Fig. 28 shows a result of a CMP step of the second substrate layer 13 for preparation of a subsequent wafer bonding.
  • the state of the MEMS wafer 10 now substantially corresponds to that of FIG. 11, but here large areas of the second substrate layer 13 are polycrystalline educated.
  • the further process sequence proceeds analogously to FIGS. 12 to 22.
  • FIG. 29 shows a process stage similar to FIG. 20, ie after the second trenching of the first substrate layer 13, in which case the conductive material 18 is structured differently than in the arrangement of FIG. 20.
  • a completely different design of the micromechanical device 100 is realized, namely a capacitive pressure sensor with fully differential
  • FIG. 30 shows that, in addition to the process steps of FIGS. 3 to 20, a gas phase etching step with gaseous HF (hydrogen fluoride) is also carried out.
  • a pressure sensor membrane realized in the second substrate layer 13 and a solid detection electrode arranged above it and realized in the first substrate layer 11 are simultaneously realized.
  • the uppermost metal layer of the ASIC wafer 20 may be used as a counter electrode so that a differential evaluation of the movement of the pressure sensor membrane becomes possible.
  • the distances of the membrane to the upper and lower electrodes are identical (not shown in FIG. 30).
  • Pressure sensor diaphragm is formed.
  • Fig. 31 shows qualitatively a state of the pressure sensor membrane in the deflected state.
  • FIG. 32 shows a basic sequence of a method for producing a micromechanical component 100.
  • a MEMS wafer 10 is provided.
  • step 210 an ASIC wafer 20 is provided.
  • step 220 formation of at least two fixed or movable structures 14, 15, which are arranged one above the other at least in sections, is carried out in the MEMS wafer 10.
  • a connection of the MEMS wafer 10 to the ASIC wafer 20 is performed.
  • step 240 formation of electrically conductive
  • Connecting elements which penetrate at least two fixed or movable structures 14,15 in the MEMS wafer 10 and are formed up to the ASIC wafer 20.
  • a cap wafer 30 is applied to the interconnected wafers 10, 20.
  • the present invention proposes a micromechanical component and a method for its production.
  • the micromechanical component can be used particularly advantageously in order to realize fully differential capacitive electrode arrangements for MEMS elements that can be deflected perpendicular to the chip plane.
  • a fixed bottom electrode is formed by the (preferred) uppermost metal level of the ASIC wafer 20, wherein a solid top electrode is formed in the first substrate layer 11.
  • the movable electrode then lies between the bottom and top electrodes and is formed from regions of the second substrate layer.
  • the MEMS layers can be formed from monocrystalline material using an SOI wafer.
  • SOI wafer As a result, smaller intrinsic stresses are possible, with inhomogeneities in the crystal structure of polycrystalline silicon can lead to intrinsic stresses. This can disadvantageously be noticeable, for example, in slight forward deflections of the sensor structures that are the case in acceleration sensors
  • the layer thicknesses of the MEMS structures are easily scalable, whereby the thicknesses of the first and second substrate layer can be increased more easily than in the case of surface micromechanical methods.
  • micromechanical inertial sensor e.g. usable for an acceleration sensor and / or a rotation rate sensor.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un composant micromécanique (100), comprenant les étapes suivantes : - production d'une plaquette MEMS (10) ; - production d'une plaquette ASIC (20) ; - formation d'au moins deux structures (14,15) fixes ou mobiles, superposées au moins par endroits, dans la plaquette MEMS (10) ; - raccordement de la plaquette MEMS (10) à la plaquette ASIC (20) ; formation d'éléments de connexion électroconducteurs dans la plaquette MEMS (10), les éléments de connexion pénétrant dans lesdites au moins deux structures fixes ou mobiles (14,15) dans la plaquette MEMS (10) et étant formées jusqu'à la plaquette ASIC (20) ; et - application d'une plaquette de recouvrement (30) sur les plaquettes reliées les unes aux autres.
PCT/EP2016/072575 2016-09-22 2016-09-22 Composant micromécanique WO2018054470A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/EP2016/072575 WO2018054470A1 (fr) 2016-09-22 2016-09-22 Composant micromécanique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2016/072575 WO2018054470A1 (fr) 2016-09-22 2016-09-22 Composant micromécanique

Publications (1)

Publication Number Publication Date
WO2018054470A1 true WO2018054470A1 (fr) 2018-03-29

Family

ID=56990436

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2016/072575 WO2018054470A1 (fr) 2016-09-22 2016-09-22 Composant micromécanique

Country Status (1)

Country Link
WO (1) WO2018054470A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020157586A1 (fr) 2019-01-28 2020-08-06 Sabic Global Technologies, B.V. Procédé de production de gaz de synthèse pauvre en hydrogène pour procédés de synthèse
WO2020161667A1 (fr) 2019-02-06 2020-08-13 Sabic Global Technologies, B.V. Procédé de production de méthanol avec efficacité énergétique accrue
EP3786108A1 (fr) * 2019-08-30 2021-03-03 Imec VZW Procédé de fabrication d'un dispositif mems
CN113292038A (zh) * 2021-07-05 2021-08-24 美满芯盛(杭州)微电子有限公司 一种mems增强质量块惯性器件及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012208030A1 (de) * 2012-05-14 2013-11-14 Robert Bosch Gmbh Mikromechanischer Inertialsensor und Verfahren zu dessen Herstellung
US20130334621A1 (en) * 2012-06-14 2013-12-19 Robert Bosch Gmbh Hybrid integrated component and method for the manufacture thereof
US20150158718A1 (en) * 2013-12-10 2015-06-11 Robert Bosch Gmbh Hybridly integrated module having a sealing structure
US20150360936A1 (en) * 2014-06-16 2015-12-17 Noureddine Tayebi Wafer Scale Monolithic CMOS-Integration of Free- and non-Free-Standing Metal- and Metal alloy-based MEMS Structures in a Sealed Cavity

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012208030A1 (de) * 2012-05-14 2013-11-14 Robert Bosch Gmbh Mikromechanischer Inertialsensor und Verfahren zu dessen Herstellung
US20130334621A1 (en) * 2012-06-14 2013-12-19 Robert Bosch Gmbh Hybrid integrated component and method for the manufacture thereof
US20150158718A1 (en) * 2013-12-10 2015-06-11 Robert Bosch Gmbh Hybridly integrated module having a sealing structure
US20150360936A1 (en) * 2014-06-16 2015-12-17 Noureddine Tayebi Wafer Scale Monolithic CMOS-Integration of Free- and non-Free-Standing Metal- and Metal alloy-based MEMS Structures in a Sealed Cavity

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020157586A1 (fr) 2019-01-28 2020-08-06 Sabic Global Technologies, B.V. Procédé de production de gaz de synthèse pauvre en hydrogène pour procédés de synthèse
WO2020161667A1 (fr) 2019-02-06 2020-08-13 Sabic Global Technologies, B.V. Procédé de production de méthanol avec efficacité énergétique accrue
EP3786108A1 (fr) * 2019-08-30 2021-03-03 Imec VZW Procédé de fabrication d'un dispositif mems
US12017909B2 (en) 2019-08-30 2024-06-25 Imec Vzw Fabrication method for a MEMS device
CN113292038A (zh) * 2021-07-05 2021-08-24 美满芯盛(杭州)微电子有限公司 一种mems增强质量块惯性器件及其制备方法
CN113292038B (zh) * 2021-07-05 2023-08-29 美满芯盛(杭州)微电子有限公司 一种mems增强质量块惯性器件及其制备方法

Similar Documents

Publication Publication Date Title
DE102010039057B4 (de) Sensormodul
DE102010008044B4 (de) MEMS-Mikrofon und Verfahren zur Herstellung
DE10063991B4 (de) Verfahren zur Herstellung von mikromechanischen Bauelementen
DE102015217918A1 (de) Mikromechanisches Bauelement
DE19537814B4 (de) Sensor und Verfahren zur Herstellung eines Sensors
DE102010039293B4 (de) Mikromechanisches Bauteil und Herstellungsverfahren für ein mikromechanisches Bauteil
EP2152627B1 (fr) Capteur micro-mécanique a membrane et procédé de réalisation correspondant
WO2018041444A1 (fr) Procédé de fabrication d'un capteur micro-mécanique
WO2018054470A1 (fr) Composant micromécanique
WO2015106854A1 (fr) Dispositif capteur de pression micromécanique et procédé de fabrication correspondant
DE102009004725A1 (de) Halbleiterschaltung mit Durchkontaktierung und Verfahren zur Herstellung vertikal integrierter Schaltungen
WO2007137893A1 (fr) COMPOSANT micromécanique et son procédé de fabrication
EP2164801A2 (fr) Élément micromécanique et procédé de production dudit élément micromécanique
DE102009055283A1 (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE102011085084A1 (de) Verfahren zum Herstellen einer elektrischen Durchkontaktierung in einem Substrat sowie Substrat mit einer elektrischen Durchkontaktierung
WO2018069028A1 (fr) Capteur micro-mécanique à structure de découplage de contraintes
DE102010029709B4 (de) Mikromechanisches Bauelement und Verfahren zum Herstellen eines mikromechanischen Bauelements
WO2020011559A1 (fr) Dispositif micromécanique de capteur de pression et procédé de fabrication correspondant
DE102017211080B3 (de) Mikromechanischer Sensor und Verfahren zum Herstellen eines mikromechanischen Sensors und eines mikromechanischen Sensorelements
DE102012213313B4 (de) Mikromechanische Struktur
DE102017206412B4 (de) Mikroelektromechanisches Bauelement, Verfahren zum Herstellen eines mikroelektromechanischen Bauelements und Verfahren zum Herstellen eines Systems auf einem Chip unter Verwendung eines CMOS-Prozesses
DE102013222664B4 (de) Verfahren zur Herstellung einer mikromechanischen Struktur
DE102006055263A1 (de) Mikromechanischer Thermopile-Sensor und Verfahren zu seiner Herstellung
DE10324421A1 (de) Halbleiterbauelement mit Metallisierungsfläche und Verfahren zur Herstellung desselben
DE102014226436A1 (de) Mikromechanische Sensorvorrichtung und entsprechendes Herstellungsverfahren

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16770487

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16770487

Country of ref document: EP

Kind code of ref document: A1