WO2018020189A3 - Module électronique de puissance d'un aéronef et procédé de fabrication associé - Google Patents

Module électronique de puissance d'un aéronef et procédé de fabrication associé Download PDF

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Publication number
WO2018020189A3
WO2018020189A3 PCT/FR2017/052137 FR2017052137W WO2018020189A3 WO 2018020189 A3 WO2018020189 A3 WO 2018020189A3 FR 2017052137 W FR2017052137 W FR 2017052137W WO 2018020189 A3 WO2018020189 A3 WO 2018020189A3
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WIPO (PCT)
Prior art keywords
aircraft
electronics module
power electronics
production method
associated production
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PCT/FR2017/052137
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English (en)
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WO2018020189A2 (fr
Inventor
Rabih KHAZAKA
Stéphane AZZOPARDI
Original Assignee
Safran
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Publication of WO2018020189A2 publication Critical patent/WO2018020189A2/fr
Publication of WO2018020189A3 publication Critical patent/WO2018020189A3/fr

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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867—Applying pastes or inks, e.g. screen printing
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  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne un module électronique de puissance (20a) d'un aéronef comprenant : - un dissipateur thermique (21 ) en matériau céramique, - un circuit de puissance (22) comprenant une première couche (23) électriquement conductrice, disposée contre le dissipateur thermique (21 ), - un circuit de commande (25) comprenant une première couche (26) électriquement conductrice, disposée contre le dissipateur thermique (21 ), - au moins un composant à semi-conducteur de puissance (24) et au moins un composant de commande (27) respectivement assemblés au circuit de puissance (22) et au circuit de commande (25).
PCT/FR2017/052137 2016-07-29 2017-07-28 Module électronique de puissance d'un aéronef et procédé de fabrication associé WO2018020189A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1657411 2016-07-29
FR1657411A FR3054721B1 (fr) 2016-07-29 2016-07-29 Module electronique de puissance d'un aeronef et procede de fabrication associe

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WO2018020189A2 WO2018020189A2 (fr) 2018-02-01
WO2018020189A3 true WO2018020189A3 (fr) 2018-03-22

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Publication number Priority date Publication date Assignee Title
DE102019124593A1 (de) * 2019-09-12 2021-03-18 Tdk Electronics Ag Kühlsystem

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61230346A (ja) * 1985-04-04 1986-10-14 Mitsubishi Electric Corp 半導体素子冷却装置
US20060113562A1 (en) * 1999-10-01 2006-06-01 Jeun Gi-Young Semiconductor power module having an electrically insulating heat sink and method of manufacturing the same
US20080224303A1 (en) * 2006-10-18 2008-09-18 Sunao Funakoshi Power Semiconductor Module
US7579682B2 (en) * 2005-08-01 2009-08-25 Infineon Technologies Ag Power semiconductor module
US20100147571A1 (en) * 2007-04-24 2010-06-17 Claus Peter Kluge Component having a metalized ceramic base
EP2597676A2 (fr) * 2011-11-28 2013-05-29 Samsung Electro-Mechanics Co., Ltd Emballage de module de puissance
US20140217620A1 (en) * 2007-12-14 2014-08-07 Denso Corporation Semiconductor device and method for manufacturing the same
DE202015001441U1 (de) * 2015-02-24 2015-03-18 Vincotech Gmbh Leistungshalbleitermodul mit kombinierten Dickfilm- und Metallsinterschichten

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2990795B1 (fr) 2012-05-16 2015-12-11 Sagem Defense Securite Agencement de module electronique de puissance

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61230346A (ja) * 1985-04-04 1986-10-14 Mitsubishi Electric Corp 半導体素子冷却装置
US20060113562A1 (en) * 1999-10-01 2006-06-01 Jeun Gi-Young Semiconductor power module having an electrically insulating heat sink and method of manufacturing the same
US7579682B2 (en) * 2005-08-01 2009-08-25 Infineon Technologies Ag Power semiconductor module
US20080224303A1 (en) * 2006-10-18 2008-09-18 Sunao Funakoshi Power Semiconductor Module
US20100147571A1 (en) * 2007-04-24 2010-06-17 Claus Peter Kluge Component having a metalized ceramic base
US20140217620A1 (en) * 2007-12-14 2014-08-07 Denso Corporation Semiconductor device and method for manufacturing the same
EP2597676A2 (fr) * 2011-11-28 2013-05-29 Samsung Electro-Mechanics Co., Ltd Emballage de module de puissance
DE202015001441U1 (de) * 2015-02-24 2015-03-18 Vincotech Gmbh Leistungshalbleitermodul mit kombinierten Dickfilm- und Metallsinterschichten

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
LODGE K J ET AL: "PROTOTYPE PACKAGES IN ALUMINIUM NITRIDE FOR HIGH PERFORMANCE ELECTRONIC SYSTEMS", PROCEEDINGS OF THE ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE. LAS VEGAS, MAY 20 - 23, 1990; [PROCEEDINGS OF THE ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE], NEW YORK, IEEE, US, vol. CONF. 40, 20 May 1990 (1990-05-20), pages 103 - 110, XP000144669 *

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FR3054721B1 (fr) 2018-12-07
WO2018020189A2 (fr) 2018-02-01
FR3054721A1 (fr) 2018-02-02

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