WO2018001163A1 - 显示基板及其制造方法和显示装置 - Google Patents

显示基板及其制造方法和显示装置 Download PDF

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Publication number
WO2018001163A1
WO2018001163A1 PCT/CN2017/089526 CN2017089526W WO2018001163A1 WO 2018001163 A1 WO2018001163 A1 WO 2018001163A1 CN 2017089526 W CN2017089526 W CN 2017089526W WO 2018001163 A1 WO2018001163 A1 WO 2018001163A1
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WIPO (PCT)
Prior art keywords
substrate
light
display
display substrate
detection light
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PCT/CN2017/089526
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English (en)
French (fr)
Inventor
丁小梁
董学
吕敬
王海生
吴俊纬
刘英明
刘伟
许睿
王鹏鹏
韩艳玲
曹学友
张平
Original Assignee
京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Publication of WO2018001163A1 publication Critical patent/WO2018001163A1/zh
Priority to US15/936,830 priority Critical patent/US10585304B2/en

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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/105—Materials and properties semiconductor single crystal Si
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/11—Function characteristic involving infrared radiation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04109—FTIR in optical digitiser, i.e. touch detection by frustrating the total internal reflection within an optical waveguide due to changes of optical properties or deformation at the touch location
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to a display substrate, a method of manufacturing the same, and a display device.
  • the present disclosure provides a display substrate, a manufacturing method thereof, and a display device for preventing a reflective phenomenon of the display device.
  • the present disclosure provides a display substrate comprising: a substrate substrate and an occlusion pattern over the substrate substrate and a plurality of detecting units, each detecting unit comprising a switching tube and a photosensitive device connected to the switching tube,
  • the occlusion pattern covers the entire switch tube on a side of the switch tube away from the base substrate, and the photosensitive device is located on a side of the occlusion pattern adjacent to the base substrate, and the occlusion pattern is configured as The illumination light is blocked and the detection light is transmitted to the photosensitive device.
  • the detection light is invisible light.
  • the detection light is infrared light.
  • the display substrate further includes a first electrode layer, where the first electrode layer is located.
  • the switching tube and a side of the photosensitive device remote from the substrate are electrically connected to the photosensitive device.
  • the switch transistor is a thin film transistor, and the thin film transistor includes a gate, an active layer, a source and a drain, the drain is connected to the photosensor, and the source is connected to a signal output line.
  • the gate is connected to the gate line.
  • the photosensitive device includes an active region and an inactive region, the drain covering an active region of the photosensitive device on an side of the photosensitive device adjacent to the substrate, an inactive region of the photosensitive device It is configured to transmit the detection light.
  • the photosensitive device is a photodiode.
  • a side of the photosensitive device remote from the substrate is provided with a connection pattern, the connection pattern is located on a side of the occlusion pattern adjacent to the substrate, and is opposite to the first electrode Layer connection.
  • a first pole of the photodiode is connected to a drain of the thin film transistor, and a second pole of the photodiode is connected to the connection pattern.
  • the first electrode layer is a common electrode layer, and the common electrode layer is connected to a common electrode line.
  • the occlusion graphic is a black matrix graphic.
  • a plurality of gate lines and a plurality of signal output lines are formed on the base substrate, and the plurality of gate lines and the plurality of signal output lines define the plurality of detecting units.
  • the illumination light is visible light.
  • the present disclosure also provides a display device including a backlight and any one of the above display substrates, the backlight being located on a substrate substrate side of the display substrate, and configured to emit the illumination light and the detection light.
  • the backlight comprises an interval illumination source for emitting the illumination light and a detection light source for emitting the detection light.
  • the present disclosure also provides a display device including: a backlight and an oppositely disposed opposite substrate and a display substrate, wherein the backlight is located on a side of the display substrate remote from the opposite substrate, and configured to emit Illuminating light and detecting light;
  • the display substrate comprises a first substrate and a plurality of detecting units located above the first substrate, each detecting unit comprising a switching tube and a photosensitive device connected to the switching tube;
  • the opposite substrate includes a second substrate and is disposed on An occlusion pattern of a side of the second substrate adjacent to the display substrate, the occlusion pattern completely covering the switch tube, and configured to block the illumination light and transmit the detection light to the photosensor.
  • the backlight comprises an interval illumination source for emitting the illumination light and a detection light source for emitting the detection light.
  • the detection light is invisible light.
  • the switch transistor is a thin film transistor
  • the thin film transistor includes a gate, an active layer, a source and a drain
  • the drain is at a side of the photosensitive device adjacent to the first substrate The side covers the entire photosensor to be connected to the photosensor, the source is connected to a signal output line, and the gate is connected to the gate line.
  • the present disclosure also provides a method of manufacturing a display substrate, comprising: forming an occlusion pattern and a plurality of detecting units above the substrate substrate, wherein each detecting unit is formed to include a switching tube and a photosensitive light connected to the switching tube
  • the occlusion pattern is formed to cover the entire switch tube on a side of the switch tube away from the base substrate, and the photosensitive device is formed on a side of the occlusion pattern close to the base substrate
  • the occlusion pattern is formed to block illumination light and transmit the detection light to the photosensor.
  • the occlusion pattern covers the entire switch tube on a side of the switch tube away from the first base substrate, and the photosensitive device is located on the occlusion pattern adjacent to the first base substrate.
  • the occlusion pattern is configured to block illumination light and transmit detection light to the photosensor.
  • the occlusion pattern provided in the embodiment can ensure that the detection light for realizing the detection function is irradiated to the photosensitive device, and can prevent the illumination light from being reflected by the switch tube by shielding the illumination light from being irradiated to the switch tube, thereby avoiding the
  • the display substrate is reflective.
  • FIG. 1 is a schematic structural diagram of a display substrate according to an embodiment of the present disclosure
  • FIG. 2 is an equivalent circuit diagram of the display substrate of FIG. 1;
  • FIG. 3 is a schematic structural diagram of a display device according to an embodiment of the present disclosure.
  • FIG. 4 is a schematic structural diagram of a display device according to an embodiment of the present disclosure.
  • FIG. 5 is a flowchart of a method for manufacturing a display substrate according to an embodiment of the present disclosure
  • 6a is a schematic diagram of forming a gate in an embodiment of the present disclosure.
  • 6b is a schematic view of forming a first insulating layer in an embodiment of the present disclosure
  • 6c is a schematic diagram of forming an active layer in an embodiment of the present disclosure.
  • 6d is a schematic diagram of forming a source and drain layer in an embodiment of the present disclosure.
  • 6e is a schematic diagram of forming a first protective layer in an embodiment of the present disclosure.
  • 6f is a schematic view of forming a photodiode in an embodiment of the present disclosure.
  • 6g is a schematic diagram of forming an occlusion pattern in an embodiment of the present disclosure.
  • 6h is a schematic diagram of forming a second insulating layer in an embodiment of the present disclosure.
  • 6i is a schematic view of forming a first electrode layer in an embodiment of the present disclosure.
  • FIG. 6j is a schematic diagram of forming a second protective layer in an embodiment of the present disclosure.
  • a display device for implementing fingerprint detection white light emitted from a backlight is reflected by a finger and reflected by a finger, and the reflected light reaches a photodiode in the display device, and the photodiode converts the reflected light into a current signal, thereby passing the current signal.
  • the photodiode converts the reflected light into a current signal, thereby passing the current signal.
  • the position of the black matrix pattern in the display device corresponding to the photodiode is provided with an aperture structure, so that white light reflected by the finger can be irradiated onto the photodiode through the aperture structure.
  • the aperture structure needs to have a larger size, so that the light will be irradiated onto the drain of the thin film transistor under the photodiode, and the drain made of the metal material will The light is reflected, causing the display device to reflect light.
  • Embodiments of the present disclosure provide a display substrate, a method of fabricating the same, and a display device capable of avoiding one or more of the problems due to limitations of the prior art.
  • a display substrate according to an embodiment of the present disclosure includes: a first substrate substrate 11 and an occlusion pattern 12 located above the first substrate substrate 11 and a plurality of detecting units 14, each detecting unit 14 comprising a switching tube (for example, the thin film transistor T in FIG. 1) and a photosensitive device (for example, the photodiode D in FIG.
  • the occlusion pattern 12 being at the switch
  • the side of the tube remote from the first base substrate 11 covers the entire switch tube (ie, the projection of the switch tube on the first base substrate 11 is within the projection of the occlusion pattern 12 on the first base substrate 11)
  • the photosensitive device Located on the side of the occlusion pattern 12 adjacent to the first substrate substrate 11, the occlusion pattern 12 is configured to block illumination light and transmit the detection light to the photosensor.
  • the occlusion pattern may be made of a metal material such as molybdenum (Mo), copper (Cu), aluminum (Al), or the like.
  • the display substrate further includes a first electrode layer 13 on a side of the switch tube, the photosensor, and the occlusion pattern away from the first substrate substrate 11, and is electrically connected to the photosensor.
  • a plurality of gate lines, a plurality of data lines, and a plurality of signal output lines are formed over the first base substrate 11.
  • a plurality of gate lines (Gate1, Gate2, Gate3, Gate4, etc.) and a plurality of signal output lines (S line1, S line2, S line3, etc.) define a plurality of detecting units 14.
  • the signal output line and the data line are disposed in the same layer, and the signal output line and the data line are parallel.
  • the switch transistor is a thin film transistor T
  • the thin film transistor T includes a gate electrode 15, an active layer 16, a source electrode 17, and a drain electrode 18.
  • the photosensor is located on a side of the drain electrode 18 away from the first substrate substrate 11.
  • the gate line and the gate 15 are disposed in the same layer, and the data line, the signal output line, the source 17 and the drain 18 are disposed in the same layer.
  • the display substrate further includes a first insulating layer 19 on a side of the gate 15 away from the first substrate substrate 11 , the first insulating layer 19 covering the entire first substrate 11 .
  • the active layer 16 is located on a side of the first insulating layer 19 remote from the gate electrode 15.
  • the source 17 is partially located on a side of the active layer 16 remote from the first insulating layer 19 and partially on a side of the first insulating layer 19 remote from the gate 15.
  • the drain 18 is partially located on a side of the active layer 16 remote from the first insulating layer 19 and partially on a side of the first insulating layer 19 remote from the gate 15.
  • the display substrate further includes a common electrode line 20 disposed in the same layer as the source 17 and the drain 18.
  • the common electrode line 20 is located on a side of the first insulating layer 19 away from the gate electrode 15.
  • the display substrate further includes a first protective layer 21, and the first protective layer 21 is located at the source
  • the first protective layer 21 covers the entire first base substrate 11 with the pole 17, the drain 18 and the side of the common electrode line 20 remote from the first insulating layer 19.
  • the photosensitive device is a photodiode D.
  • the photodiode D is a PIN junction.
  • the photodiode D may include an N-type silicon material layer 22, an I-type silicon material layer 23, and a P-type silicon material layer 24 formed on a side of the drain electrode 18 away from the first insulating layer 19.
  • the I-type silicon material layer 23 is located on the side of the N-type silicon material layer 22 remote from the drain 18, and the P-type silicon material layer 24 is located on the side of the I-type silicon material layer 23 away from the N-type silicon material layer 22.
  • a second via 25 is disposed in the first protective layer 21, and the second via 25 is located on a side of the drain 18 away from the first insulating layer 19 and exposes a portion of the drain 18, and the photosensor is located in the second via 25.
  • connection pattern 26 is located on a side of the P-type silicon material layer 24 away from the I-type silicon material layer 23 to be connected to the P-type silicon material layer 24.
  • the light shielding pattern 12 is partially located on a side of the first protective layer 21 remote from the first substrate substrate 11, and is partially located on a side of the connection pattern 26 remote from the photosensitive device.
  • the display substrate further includes a second insulating layer 28, the second insulating layer 28 is located on a side of the occlusion pattern 12 and the first protective layer 21 away from the first substrate substrate 11, and the second insulating layer 28 is covered The entire first substrate substrate 11.
  • a first via 27 is formed in the second insulating layer 28, and the first via 27 is located on a side of the connection pattern 26 remote from the photosensor and exposes a portion of the connection pattern 26.
  • the first electrode layer 13 is located on a side of the second insulating layer 28 remote from the first substrate substrate 11 and is filled in the first via hole 27 to be connected to the exposed connection pattern 26.
  • a third via 29 is disposed in the first protective layer 21 and the second insulating layer 28, and the third via 29 is located on a side of the common electrode line 20 away from the first substrate 11 and exposes a portion of the common electrode line. 20.
  • the first electrode layer 13 is filled in the third via hole 29 to be connected to the common electrode line 20.
  • the display substrate further includes a second protective layer 30 located on a side of the first electrode layer 13 away from the second insulating layer 28 and covering the entire first substrate substrate 11.
  • the display substrate further includes a second electrode layer 31, and the second electrode layer 31 is located on a side of the second protective layer 30 away from the first electrode layer 13.
  • connection pattern 26 is electrically connected to the common electrode line 20 through the first electrode layer 13. Then, the common electrode signal loaded on the common electrode line 20 can be applied to the P-type silicon material layer 24 of the photodiode D through the first electrode layer 13.
  • the first electrode layer 13 may be a common electrode layer
  • the second electrode layer 31 may be a pixel electrode layer.
  • the material of the first electrode layer 13 includes, but is not limited to, indium tin oxide (ITO)
  • the material of the second electrode layer 31 includes but is not limited to ITO
  • the material of the connection pattern 26 includes, but not limited to, ITO.
  • the occlusion pattern 12 is configured to block the illumination light and transmit the detection light to the photosensitive device, the detection light refers to the light for realizing the detection function, and the illumination light refers to the light other than the detection light, wherein
  • the detection function includes any surface texture detection function such as a fingerprint detection function.
  • the occlusion pattern 12 is a black matrix pattern.
  • the detection light is invisible light, for example, infrared light, and the illumination light is visible light, for example, white light. In practical applications, the detection light can also be light of other wavelengths, which are not enumerated here.
  • the photosensitive device includes an active area and an inactive area.
  • effective area refers to a region of a photosensitive device that is capable of converting incident light (detection light) into an electrical signal.
  • invalid region refers to a region of a photosensitive device that transmits detection light without responding thereto (ie, does not generate a corresponding electrical signal).
  • the drain electrode 18 covers the active area of the photosensor on the side of the photosensor that is adjacent to the first substrate substrate 11. The drain electrode 18 blocks the effective area of the photosensor, and since the detection light cannot penetrate the drain electrode 18, the detection light irradiated from the light incident side of the display substrate cannot be directly irradiated to the effective area of the photosensor.
  • the first electrode of the photodiode D is connected to the common electrode layer, wherein the first P-type silicon material layer 24 of the photodiode D, the common electrode layer is the first electrode layer 13, and the photodiode D
  • the second pole is connected to the first pole of the thin film transistor T, wherein the second substantially N-type silicon material layer 22 of the photodiode D, the first extreme drain 18 of the thin film transistor T; the second pole of the thin film transistor T is connected to the signal output Line (S line1, S line2, S line3, etc.), wherein the second extreme source 17 of the thin film transistor T; the gate electrode (gate 15) of the thin film transistor T is connected to the gate line.
  • the display substrate further includes a plurality of color color resists arranged in sequence, for example, the color color resists may include a red color resist, a green color resist or a blue color resist, and the first substrate substrate 11 is disposed above the first substrate. Red color resistance, green color resistance and blue color resistance.
  • the display substrate further includes a display thin film transistor required for the display substrate to realize a display function, the plurality of gate lines and the plurality of data lines defining the pixel unit, and the display thin film transistor and The second electrode layer 31 is located in the pixel unit.
  • the display substrate is a color filter on array (COA).
  • COA color filter on array
  • the occlusion pattern covers the entire switch tube on a side of the switch tube away from the first base substrate, and the photosensitive device is located on a side of the occlusion pattern close to the first base substrate, and the occlusion pattern structure is The light is blocked and the detection light is transmitted to the photosensitive device.
  • the occlusion pattern provided in the embodiment can ensure that the detection light for realizing the detection function is irradiated to the photosensitive device, and can prevent the illumination light from being reflected by the switch tube by shielding the illumination light from being irradiated to the switch tube, thereby avoiding the
  • the display substrate is reflective.
  • the occlusion pattern and the thin film transistor are both disposed in the display substrate, and the occlusion pattern and the source and the drain in the thin film transistor can be accurately aligned, thereby increasing the light transmission area.
  • the first electrode layer is located on a side of the switch tube away from the first base substrate, and the first electrode layer blocks the structure in the switch tube, and shields the influence of the capacitance of the finger, thereby Conducive to the reading of the current signal generated by the photosensitive device.
  • FIG. 3 is a schematic structural diagram of a display device according to an embodiment of the present disclosure.
  • the display device includes a backlight 1 and a oppositely disposed opposite substrate 2 and a display substrate 3 .
  • the backlight 1 is located on the display substrate. 3 is away from the side of the opposite substrate 2.
  • the display substrate 3 can be the display substrate provided by the above embodiments, and the description is not repeated here.
  • a liquid crystal layer 4 is further provided between the counter substrate 2 and the display substrate 3.
  • the display substrate 3 may be a COA
  • the opposite substrate 2 may be a glass substrate or a quartz substrate.
  • the backlight 1 may include an illumination light source 1a and a detection light source 1b which are disposed at intervals, the illumination light source 1a is for emitting illumination light, and the detection light source 1b is for emitting detection light.
  • the solid arrows indicate the illumination light
  • the dotted arrows indicate the detection light.
  • the illumination source is a white LED
  • the illumination light may be white light
  • the detection light source is an infrared LED
  • the detection light may be infrared light.
  • the detection light can also be light of other wavelengths, which are not enumerated here.
  • FIG. 3 shows an example of detecting a fingerprint.
  • the finger includes a valley position and a ridge position.
  • the detection light emitted by the backlight 1 is transmitted to the finger through the ineffective area of the photodiode in the display substrate 3, and the finger will be The detection light is reflected back to the display substrate 3.
  • the detection light is incident on the occlusion pattern 12, the occlusion pattern 12 is reflected back to the display substrate.
  • the detection light of 3 is transmitted to the photodiode D.
  • the photodiode D converts the detection light into a current signal, and outputs a current signal to the signal output line through the turned-on thin film transistor T.
  • the signal output line outputs the current signal, which can be used to determine that the detected fingerprint position is a valley position or a ridge position.
  • the valley position and the ridge position of the finger There is a difference between the valley position and the ridge position of the finger, so the light intensity of the detection light reflected by the valley position and the ridge position is different, and the current signals generated by the photodiode D when the detection light of different light intensity is irradiated to the photodiode D are different. Therefore, the detected fingerprint position can be determined by the current signal as the valley position or the ridge position.
  • the photosensitive device includes an active region and an inactive region
  • the drain electrode 18 covers the active region of the photosensor on the side of the photosensitive device adjacent to the first substrate substrate 11.
  • the drain electrode 18 blocks the effective area of the photosensor, and since the detection light cannot penetrate the drain electrode 18, the detection light irradiated from the light incident side of the display substrate 3 cannot be directly irradiated to the effective area of the photosensor.
  • the detection light is invisible light.
  • the detection light reflected back by the finger is irradiated onto the drain electrode 18, it is reflected by the drain electrode 18.
  • the detection light is invisible light, the detection light reflected by the human eye to the drain electrode 18 is not visible, and thus is reflected by the drain electrode 18. Detecting light does not cause reflections.
  • the occlusion pattern covers the entire switch tube on the side of the switch tube away from the first substrate, and the photosensor is located on the side of the occlusion pattern close to the first substrate, and the occlusion pattern is constructed.
  • the light is blocked and the detection light is transmitted to the photosensitive device.
  • the backlight in this embodiment includes an illumination source for emitting illumination light and a detection light source for emitting detection light.
  • the occlusion pattern is provided to ensure that the detection light is irradiated to the photosensitive device, and the illumination light can be blocked by the illumination. To the switch tube to prevent the switch tube from reflecting the illumination light, thereby avoiding the reflection phenomenon of the display device.
  • the occlusion pattern and the thin film transistor are both disposed in the display substrate, and the occlusion pattern and the source and the drain in the thin film transistor can be accurately aligned, thereby increasing the light transmission area.
  • the first electrode layer is located on a side of the switch tube away from the first base substrate, and the first electrode layer blocks the structure in the switch tube, and shields the influence of the capacitance of the finger, thereby Conducive to the reading of the current signal generated by the photosensitive device.
  • the display device includes a backlight 1 and a oppositely disposed opposite substrate 6 and a display substrate 7.
  • the backlight 1 is located. Showing a side of the substrate 7 remote from the opposite substrate 6, the display substrate 7 includes a first substrate substrate 11 and a first electrode layer 13 and a plurality of detecting units 14 above the first substrate substrate 11, each detecting unit 14 Including a switch tube and a photosensor connected to the switch tube,
  • the photosensitive device is also connected to the first electrode layer 13 for emitting the illumination light and the detection light
  • the opposite substrate 6 includes the second substrate substrate 31 and the side of the second substrate substrate 31 adjacent to the display substrate 7
  • the occlusion pattern 32 covers the entire switch tube (ie, the projection of the switch tube on the first substrate substrate 11 is within the projection of the occlusion pattern 32 on the first substrate substrate 11), and the occlusion pattern 32 is configured to be occluded.
  • the light is irradi
  • the occlusion pattern 32 is located in the opposite substrate 6 in this embodiment; in this embodiment, the drain 18 can be adjacent to the first photosensitive device.
  • One side of the base substrate 11 covers the entire photosensitive device, or the drain 18 may also cover the effective area of the photosensitive device on the side of the photosensitive device adjacent to the first substrate 11 (see FIG. 3); in this embodiment,
  • the detection light may pass through an area where the detection light can be blocked, such as a thin film transistor and a common electrode line, to reach the surface to be detected (for example, a finger surface).
  • the occlusion pattern 32 in the opposite substrate 6 is disposed to cover the switch tube and the photosensor, that is, the projection of the switch tube and the photosensor on the first base substrate 11 is on the occlusion pattern 32 on the first substrate. Inside the projection on 11. Since the detection light can pass through the occlusion pattern 32, the detection light reflected back by the finger can pass through the occlusion pattern 32 to reach the photosensitive device.
  • a liquid crystal layer 4 is further provided between the counter substrate 6 and the display substrate 7.
  • the display substrate 7 may be an array substrate, and the opposite substrate 6 may be a color film substrate.
  • the backlight 1 may include an illumination light source 1a and a detection light source 1b which are disposed at intervals, the illumination light source 1a is for emitting illumination light, and the detection light source 1b is for emitting detection light.
  • the solid arrows indicate the illumination light
  • the dotted arrows indicate the detection light.
  • the illumination source is a white LED
  • the illumination light may be white light
  • the detection light source is an infrared LED
  • the detection light may be infrared light.
  • the detection light can also be light of other wavelengths, which are not enumerated here.
  • the occlusion pattern 32 is a black matrix pattern.
  • FIG. 4 shows an example of fingerprint detection.
  • the finger includes a valley position and a ridge position.
  • the detection light emitted by the backlight 1 passes through a region between the thin film transistor and the common electrode line 20 in the display substrate 7 and is occluded.
  • the pattern 12 is irradiated onto the finger, the finger reflects the detected light, and the reflected detection light is returned to the display through the occlusion pattern 12.
  • the photodiode D in the substrate 7 the photodiode D converts the detection light into a current signal, and outputs a current signal to the signal output line through the turned-on thin film transistor T.
  • the signal output line outputs the current signal, which can be used to determine that the detected fingerprint position is a valley position or a ridge position.
  • the valley position and the ridge position of the finger There is a difference between the valley position and the ridge position of the finger, so the light intensity of the detection light reflected by the valley position and the ridge position is different, and the current signals generated by the photodiode D when the detection light of different light intensity is irradiated to the photodiode D are different. Therefore, the detected fingerprint position can be determined by the current signal as the valley position or the ridge position.
  • the drain 18 covers the entire photosensor on the side of the photosensor that is adjacent to the first substrate 11.
  • the drain electrode 18 blocks the photosensor, and since the detection light cannot penetrate the drain electrode 18, the detection light irradiated from the light incident side of the display substrate 7 cannot be directly irradiated onto the photosensor.
  • the occlusion pattern covers the switch tube and the photosensor, and the occlusion pattern is configured to block the illumination light and transmit the detection light to the photosensor.
  • the backlight in this embodiment includes an illumination source for emitting illumination light and a detection light source for emitting detection light.
  • the occlusion pattern is provided to ensure that the detection light is irradiated to the photosensitive device, and the illumination light can be blocked by the illumination. To the switch tube to prevent the switch tube from reflecting the illumination light, thereby avoiding the reflection phenomenon of the display device.
  • the first electrode layer is located on a side of the switch tube away from the first base substrate, and the first electrode layer blocks the structure in the switch tube, and shields the influence of the capacitance of the finger, thereby Conducive to the reading of the current signal generated by the photosensitive device.
  • Embodiments of the present disclosure provide a method of manufacturing a display substrate, the method comprising: forming an occlusion pattern and a plurality of detecting units above a first substrate, each detecting unit being formed to include a switching tube and connected to the switching tube a photosensitive device, the occlusion pattern is formed to cover the entire switch tube on a side of the switch tube away from the first base substrate 11, and the photosensitive device is formed on the occlusion pattern adjacent to the first base substrate 11 On the side, the occlusion pattern is formed to block the illumination light and transmit the detection light to the photosensitive device.
  • FIG. 5 is a flowchart of a method for manufacturing a display substrate according to an embodiment of the present disclosure. As shown in FIG. 5, the method includes steps 101 to 111.
  • Step 101 Form a gate and a gate line over the first substrate.
  • Figure 6a is a schematic view showing the formation of a gate and a gate line in the embodiment, as shown in Figure 6a, The pattern process forms a gate electrode 15 and a gate line over the first substrate substrate 11, wherein the gate lines are not specifically shown.
  • Step 102 forming a first insulating layer on a side of the gate and the gate line remote from the first substrate.
  • FIG. 6b is a schematic view showing the formation of the first insulating layer in the embodiment. As shown in FIG. 6b, a first insulating layer 19 is formed on the side of the gate electrode 15 and the gate line away from the first substrate substrate 11, the first insulating layer. 19 covers the entire first base substrate 11.
  • Step 103 Form an active layer on a side of the first insulating layer away from the gate.
  • FIG. 6c is a schematic view showing the formation of an active layer in the embodiment, and as shown in FIG. 6c, the active layer 16 is formed on the side of the first insulating layer 19 away from the gate electrode 15 by a patterning process.
  • Step 104 forming a source, a drain, a data line, a common electrode line, and a signal output line on a side of the active layer and the first insulating layer away from the gate.
  • FIG. 6d is a schematic view showing the formation of the source and drain layers in the embodiment. As shown in FIG. 6d, the source electrode 17 and the drain electrode 18 are formed on the side of the active layer 16 and the first insulating layer 19 away from the gate electrode 15 by a patterning process. The data line, the common electrode line 20, and the signal output line, wherein the data line and the signal output line are not specifically shown.
  • Step 105 forming a first protective layer on a side of the source, the drain, the data line, the common electrode line, and the signal output line away from the first insulating layer, and forming a second via hole in the first protective layer, the second pass The hole exposes a portion of the drain.
  • FIG. 6e is a schematic view showing the formation of the first protective layer in the embodiment, as shown in FIG. 6e, on the side of the source 17, the drain 18, the data line, the common electrode line 20, and the signal output line away from the first insulating layer 19.
  • a first protective layer 21 is deposited, and a second via 25 is formed in the first protective layer 21 by a patterning process.
  • Step 106 forming a photodiode and a connection pattern in the second via of the first protection layer.
  • FIG. 6f is a schematic view showing the formation of a photodiode in the embodiment. As shown in FIG. 6f, a photodiode D is formed in the second via 25 of the first protective layer 21 by a patterning process and a photoresist is remote from the drain of the photodiode D by a patterning process.
  • connection pattern 26 the photodiode D comprising an N-type silicon material layer 22, an I-type silicon material layer 23 and a P-type silicon material layer 24, the N-type silicon material layer 22 being formed at the drain 18 away from the first insulation
  • an I-type silicon material layer 23 is formed on the side of the N-type silicon material layer 22 remote from the drain electrode 18, and a P-type silicon material layer 24 is formed on the I-type silicon material layer 23 away from the N-type silicon material layer.
  • the connection pattern 26 is formed on the P-type silicon material The side of the layer 24 that is remote from the layer I of the I-type silicon material 23.
  • Step 107 forming an occlusion pattern on a side of the first protective layer and the connection pattern away from the first substrate.
  • FIG. 6g is a schematic view showing the formation of the occlusion pattern in the embodiment.
  • the occlusion pattern 12 is formed on the side of the first protective layer 21 and the connection pattern 26 remote from the first substrate substrate 11 by a patterning process.
  • the occlusion pattern 12 covers the entire thin film transistor T, and the photodiode D is located on the side of the occlusion pattern 12 close to the first substrate substrate 11.
  • the occlusion pattern is a black matrix pattern.
  • Step 108 forming a second insulating layer on a side of the occlusion pattern, the connection pattern and the first protective layer away from the first substrate, forming a first via in the second insulating layer, and forming a first via and a second A third via hole is formed in the insulating layer, the first via hole exposing a portion of the connection pattern, and the third via hole exposing a portion of the common electrode line.
  • 6h is a schematic view showing the formation of the second insulating layer in the embodiment, as shown in FIG. 6h, depositing a second insulating layer on the side of the occlusion pattern 12, the connection pattern 26, and the first protective layer 21 away from the first substrate substrate 11. 28, and forming a first via 27 in the second insulating layer 28 by a patterning process and forming a third via 29 in the first protective layer 21 and the second insulating layer 28, the first via 27 exposing a partial connection pattern 26.
  • the third via 29 exposes a portion of the common electrode line 20.
  • Step 109 Form a first electrode layer on a side of the second insulating layer away from the occlusion pattern, such that the first electrode layer fills the first via hole and the third via hole.
  • FIG. 6i is a schematic view showing the formation of the first electrode layer in the embodiment.
  • the first electrode layer 13 is formed on the side of the second insulating layer 28 away from the occlusion pattern 12, and the first electrode layer 13 is filled in the first layer.
  • the via hole 27 is connected to the connection pattern 26, and the first electrode layer 13 is filled in the third via hole 29 to be connected to the common electrode line 20.
  • Step 110 Form a second protective layer on a side of the first electrode layer away from the second insulating layer.
  • FIG. 6j is a schematic view showing the formation of a second protective layer in the embodiment. As shown in FIG. 6j, a second protective layer 30 is deposited on a side of the first electrode layer 13 away from the second insulating layer 28, and the second protective layer 30 covers the entire The first base substrate 11.
  • Step 111 Form a second electrode layer on a side of the second protective layer away from the first electrode layer.
  • the second electrode layer 31 is formed on the side of the second protective layer 30 remote from the first electrode layer 13 by a patterning process.
  • the method further includes: forming a plurality of color color resists arranged in sequence on the first substrate of the step 107, for example, the color resist may include red color resist, green color Resistance or blue color resistance.
  • the manufacturing method of the display substrate provided in this embodiment can be used to manufacture the display substrate described above with reference to FIG. 1.
  • the occlusion pattern covers the entire switch tube on a side of the switch tube away from the first substrate, and the photosensitive device is located on a side of the occlusion pattern close to the first substrate.
  • the occlusion pattern is configured to block illumination light and to transmit detection light to the photosensor.
  • the occlusion pattern provided in the embodiment can ensure that the detecting light is irradiated to the photosensitive device, and can block the illuminating light from being blocked by the illuminating light to prevent the switching tube from reflecting the illuminating light, thereby preventing the display device from being reflected.
  • the occlusion pattern and the thin film transistor are both disposed in the display substrate, and the occlusion pattern and the source and the drain in the thin film transistor can be accurately aligned, thereby increasing the light transmission area.
  • the first electrode layer is located on a side of the switch tube away from the first base substrate, and the first electrode layer blocks the structure in the switch tube, and shields the influence of the capacitance of the finger, thereby Conducive to the reading of the current signal generated by the photosensitive device.

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Abstract

本公开公开了一种显示基板及其制造方法和显示装置。该显示基板包括：衬底基板和位于衬底基板上方的遮挡图形和多个检测单元，每个检测单元包括开关管和与开关管连接的光敏器件，遮挡图形在所述开关管的远离衬底基板的一侧覆盖整个开关管，光敏器件位于遮挡图形的靠近衬底基板的一侧，遮挡图形构造为遮挡照射光以及使检测光透射至光敏器件。。本公开实施例中设置的遮挡图形既能保证检测光照射至光敏器件，又能通过遮挡照射使其无法照射至开关管来避免开关管对照射光进行反射，进而避免了显示装置出现反光现象。

Description

显示基板及其制造方法和显示装置
相关申请的交叉引用
本申请要求于2016年6月30日提交的中国专利申请No.201610513571.4的优先权，其全部内容通过引用合并于此。
技术领域
本公开涉及显示技术领域，特别涉及一种显示基板及其制造方法和显示装置。
背景技术
近年来，随着技术的高速发展，具有生物识别功能的移动产品逐渐进入人们的生活工作中，指纹识别技术由于能够唯一确定人的身份而备受重视。基于硅基工艺的按压式与滑动式指纹识别技术已经整合入移动产品中，显示领域内的指纹识别技术将是人们未来关注的核心。
发明内容
为了至少部分地解决现有技术中的问题，本公开提供一种显示基板及其制造方法和显示装置，用于避免显示装置出现反光现象。
本公开提供了一种显示基板，其包括：衬底基板和位于所述衬底基板上方的遮挡图形和多个检测单元，每个检测单元包括开关管和与开关管连接的光敏器件，所述遮挡图形在所述开关管的远离所述衬底基板的一侧覆盖整个所述开关管，所述光敏器件位于所述遮挡图形的靠近所述衬底基板的一侧，所述遮挡图形构造为遮挡照射光以及使检测光透射至光敏器件。
可选地，所述检测光为不可见光。
可选地，所述检测光为红外光。
可选地，所述显示基板还包括第一电极层，所述第一电极层位于所 述开关管和所述光敏器件的远离所述衬底基板的一侧，并且与所述光敏器件电连接。
可选地，所述开关管为薄膜晶体管，所述薄膜晶体管包括栅极、有源层、源极和漏极，所述漏极与所述光敏器件连接，所述源极与信号输出线连接，所述栅极与栅线连接。
可选地，所述光敏器件包括有效区域和无效区域，所述漏极在所述光敏器件的靠近所述衬底基板的一侧覆盖所述光敏器件的有效区域，所述光敏器件的无效区域构造为使所述检测光透过。
可选地，所述光敏器件为光敏二极管。
可选地，所述光敏器件的远离所述衬底基板的一侧设置有连接图形，所述连接图形位于所述遮挡图形的靠近所述衬底基板的一侧，并且与所述第一电极层连接。
可选地，所述光敏二极管的第一极与所述薄膜晶体管的漏极连接，所述光敏二极管的第二极与所述连接图形连接。
可选地，所述第一电极层为公共电极层，所述公共电极层与公共电极线连接。
可选地，所述遮挡图形为黑矩阵图形。
可选地，所述衬底基板上形成有多条栅线和多条信号输出线，所述多条栅线和所述多条信号输出线限定出所述多个检测单元。
可选地，所述照射光为可见光。
本公开还提供了一种显示装置，其包括背光源和上述任一显示基板，所述背光源位于所述显示基板的衬底基板侧，并且构造为发出所述照射光和所述检测光。
可选地，所述背光源包括间隔设置的照射光源和检测光源，所述照射光源用于发出所述照射光，所述检测光源用于发出所述检测光。
本公开还提供了一种显示装置，其包括：背光源以及相对设置的对置基板和显示基板，其中，所述背光源位于所述显示基板的远离对置基板的一侧，并且构造为发出照射光和检测光；所述显示基板包括第一衬底基板和位于所述第一衬底基板上方的多个检测单元，每个检测单元包括开关管和与开关管连接的光敏器件；所述对置基板包括第二衬底基板和设置于 第二衬底基板的靠近所述显示基板的一侧的遮挡图形，所述遮挡图形完全覆盖所述开关管，并且构造为遮挡所述照射光以及使所述检测光透射至光敏器件。
可选地，所述背光源包括间隔设置的照射光源和检测光源，所述照射光源用于发出所述照射光，所述检测光源用于发出所述检测光。
可选地，所述检测光为不可见光。
可选地，所述开关管为薄膜晶体管，所述薄膜晶体管包括栅极、有源层、源极和漏极，所述漏极在所述光敏器件的靠近所述第一衬底基板的一侧覆盖整个光敏器件以与所述光敏器件连接，所述源极与信号输出线连接，所述栅极与栅线连接。
本公开还提供了一种显示基板的制造方法，包括：在所述衬底基板的上方形成遮挡图形和多个检测单元，其中，每个检测单元形成为包括开关管和与开关管连接的光敏器件，所述遮挡图形形成为在所述开关管的远离所述衬底基板的一侧覆盖整个所述开关管，所述光敏器件形成在所述遮挡图形的靠近所述衬底基板的一侧，所述遮挡图形形成为遮挡照射光以及使检测光透射至光敏器件。
本公开具有以下有益效果：
本公开提供的显示基板及其制造方法和显示装置的技术方案中，遮挡图形在开关管远离第一衬底基板的一侧覆盖整个开关管，光敏器件位于遮挡图形的靠近第一衬底基板的一侧，遮挡图形构造为遮挡照射光以及使检测光透射至光敏器件。本实施例中设置的遮挡图形既能保证用于实现检测功能的检测光照射至光敏器件，又能通过遮挡照射光使其无法照射至开关管来避免开关管对照射光进行反射，进而避免了显示基板出现反光现象。
附图说明
图1为本公开实施例提供的一种显示基板的结构示意图；
图2为图1中显示基板的等效电路图；
图3为本公开实施例提供的一种显示装置的结构示意图；
图4为本公开实施例提供的一种显示装置的结构示意图；
图5为本公开实施例提供的一种显示基板的制造方法的流程图；
图6a为本公开实施例中形成栅极的示意图；
图6b为本公开实施例中形成第一绝缘层的示意图；
图6c为本公开实施例中形成有源层的示意图；
图6d为本公开实施例中形成源漏极层的示意图；
图6e为本公开实施例中形成第一保护层的示意图；
图6f为本公开实施例中形成光敏二极管的示意图；
图6g为本公开实施例中形成遮挡图形的示意图；
图6h为本公开实施例中形成第二绝缘层的示意图；
图6i为本公开实施例中形成第一电极层的示意图；
图6j为本公开实施例中形成第二保护层的示意图。
具体实施方式
为使本领域的技术人员更好地理解本公开的技术方案，下面结合附图对本公开实施例提供的显示基板及其制造方法和显示装置进行详细描述。
在用于实现指纹检测的显示装置中，从背光源发出的白光照射到手指上后被手指反射，反射光到达显示装置中的光敏二极管，光敏二极管将反射光转换为电流信号，从而通过电流信号来检测指纹。
通常，显示装置中的黑矩阵图形的与光敏二极管对应的位置设置有开孔结构，使得被手指反射的白光能够通过开孔结构照射到光敏二极管上。为了保证被手指反射的白光能够照射到光敏二极管上，开孔结构需要具有较大的尺寸，这样光线会照射到位于光敏二极管下方的薄膜晶体管的漏极上，由金属材料制成的漏极会对光线进行反射，从而使得显示装置出现反光现象。
本公开实施例提供了一种显示基板及其制造方法和显示装置，其能够避免由于现有技术的限制导致的问题中的一个或多个。
图1为本公开实施例提供的显示基板的结构示意图，图2为图1中显示基板的等效电路图。如图1和图2所示，根据本公开实施例的显示基板包括：第一衬底基板11和位于第一衬底基板11上方的遮挡图形12和 多个检测单元14，每个检测单元14包括开关管(例如，图1中的薄膜晶体管T)和与开关管连接的光敏器件(例如，图1中的光敏二极管D)，遮挡图形12在开关管的远离第一衬底基板11的一侧覆盖整个开关管(即，开关管在第一衬底基板11上的投影在遮挡图形12在第一衬底基板11上的投影内)，光敏器件位于遮挡图形12的靠近第一衬底基板11的一侧，遮挡图形12构造为遮挡照射光以及使检测光透射至光敏器件。
在本实施例中，遮挡图形可由诸如钼(Mo)、铜(Cu)、铝(Al)等的金属材料制成。
在本实施例中，显示基板还包括第一电极层13，第一电极层13位于开关管、光敏器件和遮挡图形的远离第一衬底基板11的一侧，并且与光敏器件电连接。
本实施例中，第一衬底基板11上方形成有多条栅线、多条数据线和多条信号输出线。如图2所示，多条栅线(Gate1、Gate2、Gate3、Gate4等)和多条信号输出线(S line1、S line2、S line3等)限定出多个检测单元14。可选地，信号输出线和数据线同层设置，且信号输出线和数据线平行。
本实施例中，开关管为薄膜晶体管T，薄膜晶体管T包括栅极15、有源层16、源极17和漏极18，光敏器件位于漏极18的远离第一衬底基板11的一侧。本实施例中，栅线和栅极15同层设置，并且数据线、信号输出线、源极17和漏极18同层设置。
进一步地，该显示基板还包括第一绝缘层19，第一绝缘层19位于栅极15的远离第一衬底基板11的一侧，该第一绝缘层19覆盖整个第一衬底基板11。有源层16位于第一绝缘层19的远离栅极15的一侧。源极17部分位于有源层16的远离第一绝缘层19的一侧且部分位于第一绝缘层19的远离栅极15的一侧。漏极18部分位于有源层16的远离第一绝缘层19的一侧且部分位于第一绝缘层19的远离栅极15的一侧。
进一步地，该显示基板还包括公共电极线20，公共电极线20与源极17和漏极18同层设置。公共电极线20位于第一绝缘层19的远离栅极15的一侧。
进一步地，该显示基板还包括第一保护层21，第一保护层21位于源 极17、漏极18和公共电极线20的远离第一绝缘层19的一侧，该第一保护层21覆盖整个第一衬底基板11。
本实施例中，光敏器件为光敏二极管D。该光敏二极管D为PIN结。具体地，光敏二极管D可包括N型硅材料层22、I型硅材料层23和P型硅材料层24，N型硅材料层22形成在漏极18的远离第一绝缘层19的一侧，I型硅材料层23位于N型硅材料层22的远离漏极18的一侧，P型硅材料层24位于I型硅材料层23的远离N型硅材料层22的一侧。第一保护层21中设置有第二过孔25，第二过孔25位于漏极18的远离第一绝缘层19的一侧并暴露出部分漏极18，光敏器件位于第二过孔25中以与漏极18连接。具体地，光敏二极管D中至少N型硅材料层22位于第二过孔25中以使N型硅材料层22与漏极18连接。
进一步地，光敏器件的远离漏极18的一侧设置有连接图形26。具体地，连接图形26位于P型硅材料层24的远离I型硅材料层23的一侧以与P型硅材料层24连接。遮光图形12部分位于第一保护层21的远离第一衬底基板11的一侧，并且部分位于连接图形26的远离光敏器件的一侧。
进一步地，该显示基板还包括第二绝缘层28，该第二绝缘层28位于遮挡图形12和第一保护层21的远离第一衬底基板11的一侧，且该第二绝缘层28覆盖整个第一衬底基板11。第二绝缘层28中形成有第一过孔27，该第一过孔27位于连接图形26的远离光敏器件的一侧并暴露出部分连接图形26。
第一电极层13位于第二绝缘层28的远离第一衬底基板11的一侧并且填充于第一过孔27中以与暴露出的连接图形26连接。此外，第一保护层21和第二绝缘层28中设置有第三过孔29，第三过孔29位于公共电极线20的远离第一衬底基板11的一侧并暴露出部分公共电极线20，第一电极层13填充于第三过孔29中以与公共电极线20连接。
进一步地，该显示基板还包括第二保护层30，第二保护层30位于第一电极层13的远离第二绝缘层28的一侧，且覆盖整个第一衬底基板11。
进一步地，该显示基板还包括第二电极层31，第二电极层31位于第二保护层30的远离第一电极层13的一侧。
本实施例中，连接图形26通过第一电极层13与公共电极线20电连 接，这样公共电极线20上加载的公共电极信号可通过第一电极层13施加到光敏二极管D的P型硅材料层24上。第一电极层13可以为公共电极层，第二电极层31可以为像素电极层。可选地，第一电极层13的材料包括但不限于铟锡氧化物(ITO)，第二电极层31的材料包括但不限于ITO，连接图形26的材料包括但不限于ITO。
本实施例中，遮挡图形12构造为遮挡照射光以及使检测光透射至光敏器件，检测光是指用于实现检测功能的光，照射光是指除所述检测光以外的光，其中，所述检测功能包括指纹检测功能等任何表面纹理检测功能。可选地，遮挡图形12为黑矩阵图形。可选地，检测光为不可见光，例如：红外光，照射光为可见光，例如，白光。在实际应用中，检测光还可以为其它波长的光线，此处不再一一列举。
本实施例中，光敏器件包括有效区域和无效区域。本文使用的术语“有效区域”是指光敏器件的能够将入射光(检测光)转换为电信号的区域。本文使用的术语“无效区域”是指光敏器件的使检测光透过而不对其进行响应(即，不产生相应的电信号)的区域。漏极18在光敏器件的靠近第一衬底基板11的一侧覆盖光敏器件的有效区域。漏极18遮挡了光敏器件的有效区域，由于检测光无法穿透漏极18，从而使得从显示基板的入光侧照射的检测光无法直接照射至光敏器件的有效区域。
如图2所示，光敏二极管D的第一极连接至公共电极层，其中，光敏二极管D的第一极为P型硅材料层24，公共电极层为第一电极层13；光敏二极管D的第二极连接至薄膜晶体管T的第一极，其中，光敏二极管D的第二极为N型硅材料层22，薄膜晶体管T的第一极为漏极18；薄膜晶体管T的第二极连接至信号输出线(S line1、S line2、S line3等)，其中，薄膜晶体管T的第二极为源极17；薄膜晶体管T的控制极(栅极15)与栅线连接。
进一步地，该显示基板还包括依次排列的多个彩色色阻，例如该彩色色阻可包括红色色阻、绿色色阻或者蓝色色阻，则第一衬底基板11的上方设置有依次排列的红色色阻、绿色色阻和蓝色色阻。
进一步地，该显示基板还包括显示基板实现显示功能所需的显示薄膜晶体管，多条栅线和多条数据线限定出像素单元，则显示薄膜晶体管和 第二电极层31位于像素单元中。
本实施例中，显示基板为彩膜阵列基板(color filter on array，简称：COA)。
本实施例提供的显示基板的技术方案中，遮挡图形在开关管远离第一衬底基板的一侧覆盖整个开关管，光敏器件位于遮挡图形的靠近第一衬底基板的一侧，遮挡图形构造为遮挡照射光以及使检测光透射至光敏器件。本实施例中设置的遮挡图形既能保证用于实现检测功能的检测光照射至光敏器件，又能通过遮挡照射光使其无法照射至开关管来避免开关管对照射光进行反射，进而避免了显示基板出现反光现象。本实施例中，遮挡图形和薄膜晶体管均设置于显示基板中，遮挡图形与薄膜晶体管中的源极和漏极可实现精确对位，从而可增大透光面积。本实施例中，第一电极层位于开关管的远离第一衬底基板的一侧，该第一电极层对开关管中的结构进行了遮挡，对手指的电容的影响进行了屏蔽，从而有利于光敏器件生成的电流信号的读取。
图3为本公开实施例提供的一种显示装置的结构示意图，如图3所示，该显示装置包括：背光源1以及相对设置的对置基板2和显示基板3，背光源1位于显示基板3的远离对置基板2的一侧。其中，显示基板3可采用上述实施例提供的显示基板，此处不再重复描述。
对置基板2和显示基板3之间还设置有液晶层4。
本实施例中，显示基板3可以为COA，对置基板2可以为玻璃基板或石英基板。
本实施例中，背光源1可包括间隔设置的照射光源1a和检测光源1b，照射光源1a用于发出照射光，检测光源1b用于发出检测光。如图3所示，实线箭头所示为照射光，虚线箭头所示为检测光。可选地，照射光源为白光LED，照射光可以为白光；检测光源为红外LED，检测光可以为红外光。在实际应用中，检测光还可以为其它波长的光线，此处不再一一列举。
图3示出了检测指纹的示例。如图2和图3所示，手指包括谷位置和脊位置，当手指发生触摸动作时，背光源1发出的检测光透过显示基板3中的光敏二极管的无效区域照射到手指上，手指将检测光反射回显示基板3。当检测光照射到遮挡图形12上时，遮挡图形12使反射回显示基板 3的检测光透射至光敏二极管D。光敏二极管D将检测光转换为电流信号，并通过开启的薄膜晶体管T将电流信号输出至信号输出线。信号输出线将该电流信号输出，该电流信号可用于判断出检测到的指纹位置为谷位置或者脊位置。手指的谷位置和脊位置之间存在差异，因此谷位置和脊位置反射的检测光的光强是不同的，不同光强的检测光照射到光敏二极管D时光敏二极管D产生的电流信号也是不同的，所以可通过电流信号判断出检测到的指纹位置为谷位置或者脊位置。
本实施例中，光敏器件包括有效区域和无效区域，漏极18在光敏器件的靠近第一衬底基板11的一侧覆盖光敏器件的有效区域。漏极18遮挡了光敏器件的有效区域，由于检测光无法穿透漏极18，从而使得从显示基板3的入光侧照射的检测光无法直接照射至光敏器件的有效区域。
本实施例中，检测光为不可见光。被手指反射回的检测光照射至漏极18上时，会被漏极18反射，但是由于检测光为不可见光，人眼对漏极18反射的检测光不可见，因此被漏极18反射的检测光不会造成反光现象。
本实施例提供的显示装置的技术方案中，遮挡图形在开关管远离第一衬底基板的一侧覆盖整个开关管，光敏器件位于遮挡图形的靠近第一衬底基板的一侧，遮挡图形构造为遮挡照射光以及使检测光透射至光敏器件。本实施例中的背光源包括用于发出照射光的照射光源和用于发出检测光的检测光源，设置的遮挡图形既能保证检测光照射至光敏器件，又能通过遮挡照射光使其无法照射至开关管来避免开关管对照射光进行反射，进而避免了显示装置出现反光现象。本实施例中，遮挡图形和薄膜晶体管均设置于显示基板中，遮挡图形与薄膜晶体管中的源极和漏极可实现精确对位，从而可增大透光面积。本实施例中，第一电极层位于开关管的远离第一衬底基板的一侧，该第一电极层对开关管中的结构进行了遮挡，对手指的电容的影响进行了屏蔽，从而有利于光敏器件生成的电流信号的读取。
图4为本公开实施例提供的一种显示装置的结构示意图，如图4和图2所示，该显示装置包括背光源1以及相对设置的对置基板6和显示基板7，背光源1位于显示基板7的远离对置基板6的一侧，显示基板7包括第一衬底基板11和位于第一衬底基板11上方的第一电极层13和多个检测单元14，每个检测单元14包括开关管和与开关管连接的光敏器件， 光敏器件还与第一电极层13连接，背光源1用于发出照射光和检测光，对置基板6包括第二衬底基板31和设置于第二衬底基板31的靠近显示基板7一侧的遮挡图形32，遮挡图形32覆盖整个开关管(即，开关管在第一衬底基板11上的投影在遮挡图形32在第一衬底基板11上的投影内)，遮挡图形32构造为遮挡照射光以及使检测光透射至光敏器件。
本实施例中的显示装置与上述参照图3描述的显示装置的区别在于：本实施例中遮挡图形32位于对置基板6中；本实施例中，漏极18可在光敏器件的靠近第一衬底基板11的一侧覆盖整个光敏器件，或者，漏极18也可在光敏器件的靠近第一衬底基板11的一侧覆盖光敏器件的有效区域(参见图3)；本实施例中，检测光可以从未设置有薄膜晶体管和公共电极线等能够遮挡检测光的区域穿过，以到达待检测表面(例如，手指表面)。对本实施例中显示基板的其余结构的描述可参见上述参照图1进行的描述，此处不再赘述。
本实施例中，对置基板6中的遮挡图形32设置为覆盖开关管和光敏器件，即，开关管和光敏器件在第一衬底基板11上的投影在遮挡图形32在第一衬底基板11上的投影内。由于检测光能够透过遮挡图形32，因此被手指反射回的检测光能够透过遮挡图形32到达光敏器件。
本实施例中，对置基板6和显示基板7之间还设置有液晶层4。
本实施例中，显示基板7可以为阵列基板，对置基板6可以为彩膜基板。
本实施例中，背光源1可包括间隔设置的照射光源1a和检测光源1b，照射光源1a用于发出照射光，检测光源1b用于发出检测光。如图4所示，实线箭头所示为照射光，虚线箭头所示为检测光。可选地，照射光源为白光LED，照射光可以为白光；检测光源为红外LED，检测光可以为红外光。在实际应用中，检测光还可以为其它波长的光线，此处不再一一列举。
可选地，遮挡图形32为黑矩阵图形。
图4示出了指纹检测的示例。如图2和图4所示，手指包括谷位置和脊位置，当手指发生触摸动作时，背光源1发出的检测光透过显示基板7中薄膜晶体管和公共电极线20之间的区域以及遮挡图形12照射到手指上，手指对检测光进行反射，反射的检测光透过遮挡图形12返回至显示 基板7中的光敏二极管D上，光敏二极管D将检测光转换为电流信号，并通过开启的薄膜晶体管T将电流信号输出至信号输出线。信号输出线将该电流信号输出，该电流信号可用于判断出检测到的指纹位置为谷位置或者脊位置。手指的谷位置和脊位置之间存在差异，因此谷位置和脊位置反射的检测光的光强是不同的，不同光强的检测光照射到光敏二极管D时光敏二极管D产生的电流信号也是不同的，所以可通过电流信号判断出检测到的指纹位置为谷位置或者脊位置。
本实施例中，漏极18在光敏器件的靠近第一衬底基板11的一侧覆盖整个光敏器件。漏极18遮挡了光敏器件，由于检测光无法穿透漏极18，从而使得从显示基板7的入光侧照射的检测光无法直接照射至光敏器件上。
本实施例提供的显示装置的技术方案中，遮挡图形覆盖开关管和光敏器件，遮挡图形构造为遮挡照射光以及使检测光透射至光敏器件。本实施例中的背光源包括用于发出照射光的照射光源和用于发出检测光的检测光源，设置的遮挡图形既能保证检测光照射至光敏器件，又能通过遮挡照射光使其无法照射至开关管来避免开关管对照射光进行反射，进而避免了显示装置出现反光现象。本实施例中，第一电极层位于开关管的远离第一衬底基板的一侧，该第一电极层对开关管中的结构进行了遮挡，对手指的电容的影响进行了屏蔽，从而有利于光敏器件生成的电流信号的读取。
本公开实施例提供了一种显示基板的制造方法，该方法包括：在第一衬底基板的上方形成遮挡图形和多个检测单元，每个检测单元形成为包括开关管和与开关管连接的光敏器件，所述遮挡图形形成为在开关管的远离第一衬底基板11的一侧覆盖整个所述开关管，所述光敏器件形成在所述遮挡图形的靠近第一衬底基板11的一侧，所述遮挡图形形成为遮挡照射光以及使检测光透射至光敏器件。
下面参照图5对实施例中的显示基板的制造方法进行详细描述。图5为本公开实施例提供的一种显示基板的制造方法的流程图，如图5所示，该方法包括步骤101至111。
步骤101、在第一衬底基板之上形成栅极和栅线。
图6a为实施例中形成栅极和栅线的示意图，如图6a所示，通过构 图工艺在第一衬底基板11之上形成栅极15和栅线，其中栅线未具体示出。
步骤102、在栅极和栅线的远离第一衬底基板的一侧形成第一绝缘层。
图6b为实施例中形成第一绝缘层的示意图，如图6b所示，在栅极15和栅线的远离第一衬底基板11的一侧形成第一绝缘层19，该第一绝缘层19覆盖整个第一衬底基板11。
步骤103、在第一绝缘层的远离栅极的一侧形成有源层。
图6c为实施例中形成有源层的示意图，如图6c所示，通过构图工艺在第一绝缘层19的远离栅极15的一侧形成有源层16。
步骤104、在有源层和第一绝缘层的远离栅极的一侧形成源极、漏极、数据线、公共电极线和信号输出线。
图6d为实施例中形成源漏极层的示意图，如图6d所示，通过构图工艺在有源层16和第一绝缘层19的远离栅极15的一侧形成源极17、漏极18、数据线、公共电极线20和信号输出线，其中，数据线和信号输出线未具体示出。
步骤105、在源极、漏极、数据线、公共电极线和信号输出线的远离第一绝缘层的一侧形成第一保护层以及在第一保护层中形成第二过孔，第二过孔暴露出部分漏极。
图6e为实施例中形成第一保护层的示意图，如图6e所示，在源极17、漏极18、数据线、公共电极线20和信号输出线的远离第一绝缘层19的一侧沉积第一保护层21，并通过构图工艺在第一保护层21中形成第二过孔25。
步骤106、在第一保护层的第二过孔中形成光敏二极管和连接图形。
图6f为实施例中形成光敏二极管的示意图，如图6f所示，通过构图工艺在第一保护层21的第二过孔25中形成光敏二极管D以及通过构图工艺在光敏二极管D的远离漏极18的一侧形成连接图形26，光敏二极管D包括N型硅材料层22、I型硅材料层23和P型硅材料层24，N型硅材料层22形成在漏极18的远离第一绝缘层19的一侧，I型硅材料层23形成在N型硅材料层22的远离漏极18的一侧，P型硅材料层24形成在I型硅材料层23的远离N型硅材料层22的一侧，连接图形26形成在P型硅材 料层24的远离I型硅材料层23的一侧。
步骤107、在第一保护层和连接图形的远离第一衬底基板的一侧形成遮挡图形。
图6g为实施例中形成遮挡图形的示意图，如图6g所示，通过构图工艺在第一保护层21和连接图形26的远离第一衬底基板11的一侧形成遮挡图形12。遮挡图形12覆盖整个薄膜晶体管T，光敏二极管D位于遮挡图形12的靠近第一衬底基板11的一侧。本实施例中，遮挡图形为黑矩阵图形。
步骤108、在遮挡图形、连接图形和第一保护层的远离第一衬底基板的一侧形成第二绝缘层，在第二绝缘层中形成第一过孔以及在第一保护层和第二绝缘层中形成第三过孔，第一过孔暴露出部分连接图形，第三过孔暴露出部分公共电极线。
图6h为实施例中形成第二绝缘层的示意图，如图6h所示，在遮挡图形12、连接图形26和第一保护层21的远离第一衬底基板11的一侧沉积第二绝缘层28，并通过构图工艺在第二绝缘层28中形成第一过孔27以及在第一保护层21和第二绝缘层28中形成第三过孔29，第一过孔27暴露出部分连接图形26，第三过孔29暴露出部分公共电极线20。
步骤109、在第二绝缘层的远离遮挡图形的一侧形成第一电极层，使得第一电极层填充第一过孔和第三过孔。
图6i为实施例中形成第一电极层的示意图，如图6i所示，在第二绝缘层28的远离遮挡图形12的一侧形成第一电极层13，第一电极层13填充于第一过孔27中以与连接图形26连接，第一电极层13填充于第三过孔29中以与公共电极线20连接。
步骤110、在第一电极层的远离第二绝缘层的一侧形成第二保护层。
图6j为实施例中形成第二保护层的示意图，如图6j所示，在第一电极层13的远离第二绝缘层28的一侧沉积第二保护层30，第二保护层30覆盖整个第一衬底基板11。
步骤111、在第二保护层的远离第一电极层的一侧形成第二电极层。
如图1所示，通过构图工艺在第二保护层30的远离第一电极层13的一侧形成第二电极层31。
可选地，在步骤107和步骤108之间还包括：在完成步骤107的第一衬底基板之上形成依次排列的多个彩色色阻，例如该彩色色阻可包括红色色阻、绿色色阻或者蓝色色阻。
本实施例提供的显示基板的制造方法可用于制造上述参照图1描述的显示基板。
本实施例提供的显示基板的制造方法的技术方案中，遮挡图形在开关管远离第一衬底基板的一侧覆盖整个开关管，光敏器件位于遮挡图形的靠近第一衬底基板的一侧，遮挡图形构造为遮挡照射光以及使检测光透射至光敏器件。本实施例中设置的遮挡图形既能保证检测光照射至光敏器件，又能通过遮挡照射光使其无法照射至开关管来避免开关管对照射光进行反射，进而避免了显示装置出现反光现象。本实施例中，遮挡图形和薄膜晶体管均设置于显示基板中，遮挡图形与薄膜晶体管中的源极和漏极可实现精确对位，从而可增大透光面积。本实施例中，第一电极层位于开关管的远离第一衬底基板的一侧，该第一电极层对开关管中的结构进行了遮挡，对手指的电容的影响进行了屏蔽，从而有利于光敏器件生成的电流信号的读取。
可以理解的是，以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式，然而本公开并不局限于此。对于本领域内的普通技术人员而言，在不脱离本公开的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本公开的保护范围。

Claims (20)

  1. 一种显示基板，包括：衬底基板和位于所述衬底基板上方的遮挡图形和多个检测单元，每个检测单元包括开关管和与开关管连接的光敏器件，所述遮挡图形在所述开关管的远离所述衬底基板的一侧覆盖整个所述开关管，所述光敏器件位于所述遮挡图形的靠近所述衬底基板的一侧，所述遮挡图形构造为遮挡照射光以及使检测光透射至光敏器件。
  2. 根据权利要求1所述的显示基板，其中，所述检测光为不可见光。
  3. 根据权利要求2所述的显示基板，其中，所述检测光为红外光。
  4. 根据权利要求1所述的显示基板，还包括第一电极层，所述第一电极层位于所述开关管和所述光敏器件的远离所述衬底基板的一侧，并且与所述光敏器件电连接。
  5. 根据权利要求4所述的显示基板，其中，所述开关管为薄膜晶体管，所述薄膜晶体管包括栅极、有源层、源极和漏极，所述漏极与所述光敏器件连接，所述源极与信号输出线连接，所述栅极与栅线连接。
  6. 根据权利要求5所述的显示基板，其中，所述光敏器件包括有效区域和无效区域，所述漏极在所述光敏器件的靠近所述衬底基板的一侧覆盖所述光敏器件的有效区域，所述光敏器件的无效区域构造为使所述检测光透过。
  7. 根据权利要求5所述的显示基板，其中，所述光敏器件为光敏二极管。
  8. 根据权利要求7所述的显示基板，其中，所述光敏器件的远离所述衬底基板的一侧设置有连接图形，所述连接图形位于所述遮挡图形的靠 近所述衬底基板的一侧，并且与所述第一电极层连接。
  9. 根据权利要求8所述的显示基板，其中，所述光敏二极管的第一极与所述薄膜晶体管的漏极连接，所述光敏二极管的第二极与所述连接图形连接。
  10. 根据权利要求9所述的显示基板，其中，所述第一电极层为公共电极层，所述公共电极层与公共电极线连接。
  11. 根据权利要求1所述的显示基板，其中，所述遮挡图形为黑矩阵图形。
  12. 根据权利要求1所述的显示基板，其中，所述衬底基板上形成有多条栅线和多条信号输出线，所述多条栅线和所述多条信号输出线限定出所述多个检测单元。
  13. 根据权利要求1所述的显示基板，其中，所述照射光为可见光。
  14. 一种显示装置，包括背光源和根据权利要求1至13中任一项所述的显示基板，所述背光源位于所述显示基板的衬底基板侧，并且构造为发出所述照射光和所述检测光。
  15. 根据权利要求14所述的显示装置，其中，所述背光源包括间隔设置的照射光源和检测光源，所述照射光源用于发出所述照射光，所述检测光源用于发出所述检测光。
  16. 一种显示装置，包括：背光源以及相对设置的对置基板和显示基板，其中，所述背光源位于所述显示基板的远离对置基板的一侧，并且构造为发出照射光和检测光；所述显示基板包括第一衬底基板和位于所述第一衬底基板上方的多个检测单元，每个检测单元包括开关管和与开关管 连接的光敏器件；所述对置基板包括第二衬底基板和设置于第二衬底基板的靠近所述显示基板的一侧的遮挡图形，所述遮挡图形完全覆盖所述开关管，并且构造为遮挡所述照射光以及使所述检测光透射至光敏器件。
  17. 根据权利要求16所述的显示装置，其中，所述背光源包括间隔设置的照射光源和检测光源，所述照射光源用于发出所述照射光，所述检测光源用于发出所述检测光。
  18. 根据权利要求17所述的显示装置，其中，所述检测光为不可见光。
  19. 根据权利要求16所述的显示装置，其中，所述开关管为薄膜晶体管，所述薄膜晶体管包括栅极、有源层、源极和漏极，所述漏极在所述光敏器件的靠近所述第一衬底基板的一侧覆盖整个光敏器件以与所述光敏器件连接，所述源极与信号输出线连接，所述栅极与栅线连接。
  20. 一种制造根据权利要求1所述的显示基板的方法，包括：
    在所述衬底基板的上方形成遮挡图形和多个检测单元，其中，每个检测单元形成为包括开关管和与开关管连接的光敏器件，所述遮挡图形形成为在所述开关管的远离所述衬底基板的一侧覆盖整个所述开关管，所述光敏器件形成在所述遮挡图形的靠近所述衬底基板的一侧，所述遮挡图形形成为遮挡照射光以及使检测光透射至光敏器件。
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