WO2017168581A1 - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
WO2017168581A1
WO2017168581A1 PCT/JP2016/060200 JP2016060200W WO2017168581A1 WO 2017168581 A1 WO2017168581 A1 WO 2017168581A1 JP 2016060200 W JP2016060200 W JP 2016060200W WO 2017168581 A1 WO2017168581 A1 WO 2017168581A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
layer
conductive layer
insulating layer
emitting device
Prior art date
Application number
PCT/JP2016/060200
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French (fr)
Japanese (ja)
Inventor
真滋 中嶋
幸二 藤田
Original Assignee
パイオニア株式会社
東北パイオニア株式会社
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Application filed by パイオニア株式会社, 東北パイオニア株式会社 filed Critical パイオニア株式会社
Priority to PCT/JP2016/060200 priority Critical patent/WO2017168581A1/en
Publication of WO2017168581A1 publication Critical patent/WO2017168581A1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers

Definitions

  • the present invention relates to a light emitting device.
  • the light emitting device has a substrate and a plurality of light emitting units on the substrate.
  • Each light emitting unit includes a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode. More specifically, the light emitting device has a first conductive layer extending in the first direction and a second conductive layer extending in a second direction orthogonal to the first direction.
  • the first conductive layer has a portion overlapping the second conductive layer.
  • the second conductive layer has a portion overlapping the first conductive layer.
  • the above-described portion of the first conductive layer functions as the first electrode of the light emitting unit.
  • the above-described portion of the second conductive layer functions as the second electrode of the light emitting unit.
  • Patent Document 1 describes an insulating layer for defining each side of a light emitting portion.
  • the insulating layer is on the substrate and the first conductive layer.
  • the insulating layer is made of polyimide, for example.
  • the insulating layer has an opening that exposes a part of the first conductive layer (a portion that functions as the first electrode of the light emitting portion).
  • the second conductive layer is located on the insulating layer and on the opening so that a part of the second conductive layer (a part functioning as the second electrode of the light emitting unit) overlaps with the opening.
  • each side of the light emitting unit is defined by the edge of the opening.
  • an insulating layer having an opening may be formed in order to define an edge (side) of the light emitting portion.
  • the present inventor examined it became clear that the substance which degrades a light emission part may propagate through the above-mentioned insulating layer.
  • the present invention even if an insulating layer is used to demarcate the sides of the light emitting portion, it is an example to suppress a substance that deteriorates the light emitting portion from being widely propagated through the insulating layer. As mentioned.
  • the invention described in claim 1 A substrate, An insulating layer on the substrate; A plurality of light emitting portions exposed from the insulating layer on the substrate, each having a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode; With The light emitting unit intersects the first side defined by the insulating layer, the second side defined by the insulating layer on the side opposite to the first side, and the first side and the second side.
  • the light emitting device has a third side extending in a direction and exposed from the insulating layer.
  • FIG. 3 It is a top view which shows the light-emitting device which concerns on embodiment. It is the figure which removed the coating layer from FIG. FIG. 3 is a view in which a second conductive layer and a partition wall are removed from FIG. 2. It is the figure which removed the insulating layer from FIG. FIG. 3 is a cross-sectional view taken along line AA in FIG. 2. FIG. 3 is a sectional view taken along line BB in FIG. FIG. 3 is a cross-sectional view taken along the line CC of FIG. FIG. 3 is a DD sectional view of FIG. 2. It is the figure which expanded the opening shown in FIG. It is a figure which shows the modification of FIG. It is a figure which shows the 1st modification of FIG. It is a figure which shows the 2nd modification of FIG. 1 is a plan view showing a light emitting device according to Example 1.
  • FIG. 3 It is a figure which removed the coating layer from FIG.
  • FIG. 3 is a view in which a second conductive layer and
  • FIG. 1 is a plan view showing a light emitting device 10 according to the embodiment.
  • FIG. 2 is a view in which the covering layer 200 is removed from FIG.
  • FIG. 3 is a diagram in which the second conductive layer 130a and the partition 160 are removed from FIG.
  • FIG. 4 is a diagram in which the insulating layer 150 is removed from FIG.
  • FIG. 5 is a cross-sectional view taken along the line AA in FIG. 6 is a cross-sectional view taken along the line BB in FIG. 7 is a cross-sectional view taken along the line CC of FIG.
  • FIG. 8 is a sectional view taken along the line DD of FIG.
  • FIG. 9 is an enlarged view of the opening 152 shown in FIG.
  • the light emitting device 10 includes a substrate 100, an insulating layer 150, and a plurality of light emitting units 140.
  • the insulating layer 150 is on the substrate 100.
  • the plurality of light emitting units 140 are exposed from the insulating layer 150 on the substrate 100.
  • each light emitting unit 140 is on the substrate 100.
  • Each light emitting unit 140 includes a first electrode 110, an organic layer 120, and a second electrode 130.
  • the organic layer 120 is between the first electrode 110 and the second electrode 130.
  • each light emitting unit 140 has a first side 142, a second side 144, a third side 146, and a fourth side 148.
  • the first side 142 is defined by the insulating layer 150.
  • the second side 144 is on the side opposite to the first side 142 and is defined by the insulating layer 150.
  • the third side 146 extends in the direction intersecting the first side 142 and the second side 144 (the Y direction in the drawing) and is exposed from the insulating layer 150.
  • the fourth side 148 is on the side opposite to the third side 146 and is exposed from the insulating layer 150.
  • the light emitting units 140 adjacent to each other are arranged such that the third side 146 of one light emitting unit 140 and the fourth side 148 of the other light emitting unit 140 face each other.
  • the substrate 100 is exposed from the insulating layer 150 between the light emitting units 140 adjacent to each other.
  • the insulating layer 150 includes a first region 150a and a second region 150b.
  • the first region 150a has a first edge 152a.
  • the second region 150b has a second edge 152b.
  • the first edge 152a and the second edge 152b are opposed to each other.
  • the first edge 152 a is a part (third edge) of the edge of the opening 152 of the insulating layer 150
  • the second edge 152 b is the other edge of the opening 152 of the insulating layer 150.
  • Part (fourth edge) A first side 142 of each light emitting unit 140 in the opening 152 is defined by a first edge 152a.
  • the second side 144 of each light emitting unit 140 in the opening 152 is defined by the second edge 152b. Details will be described below.
  • the light emitting device 10 is a display.
  • the light emitting device 10 includes a substrate 100, a conductive layer 170, a conductive layer 180, an insulating layer 150, an organic layer 120a, a second conductive layer 130a, a partition wall 160, and a coating layer 200.
  • the substrate 100 has a first surface 102 and a second surface 104.
  • the second surface 104 is on the opposite side of the first surface 102 and is the back surface of the substrate 100.
  • the shape of the first surface 102 is a rectangle.
  • the shape of the first surface 102 may be a polygon other than a rectangle, for example.
  • the light emitting device 10 may be either bottom emission or top emission.
  • the substrate 100 is made of a translucent material (for example, glass or resin).
  • the light emitting device 10 is top emission, the light from the plurality of light emitting units 140 is emitted from above the first surface 102 of the substrate 100.
  • the substrate 100 may be made of the above-described translucent material or may be made of a material that does not have translucency.
  • the substrate 100 may have flexibility or may not have flexibility.
  • the thickness of the substrate 100 is, for example, not less than 10 ⁇ m and not more than 1000 ⁇ m.
  • the thickness of the substrate 100 is, for example, 200 ⁇ m or less.
  • the substrate 100 is flexible and includes a resin
  • the substrate 100 includes, for example, PEN (polyethylene naphthalate), PES (polyethersulfone), PET (polyethylene terephthalate), or polyimide.
  • the first surface 102 (preferably both the first surface 102 and the second surface 104) of the substrate 100 may be covered with an inorganic barrier film (eg, SiN x or SiON). In this case, even if the substrate 100 includes a material (for example, resin) having a high water vapor transmission rate, the water vapor is prevented from reaching the first surface 102 of the substrate 100.
  • an inorganic barrier film eg, SiN x or SiON
  • the plurality of conductive layers 170 are on the first surface 102 of the substrate 100.
  • the plurality of conductive layers 170 include a plurality of conductive layers 170a and a plurality of conductive layers 170b.
  • Each conductive layer 170 a includes a first conductive layer 110 a and a first wiring 114.
  • the first conductive layer 110a is a part of the conductive layer 170a.
  • the first wiring 114 is another part of the conductive layer 170a.
  • the first conductive layer 110a and the first wiring 114 are connected to each other.
  • Each conductive layer 170 b includes a second wiring 134.
  • the first terminal 112 is located at one end of the first wiring 114. A potential is applied to the first terminal 112. Thereby, the potential of the first terminal 112 is applied to the first conductive layer 110a (first electrode 110) through the first wiring 114.
  • the second terminal 132 is located at one end of the second wiring 134. A potential is applied to the second terminal 132. Thereby, the potential of the second terminal 132 is applied to the second conductive layer 130a (second electrode 130) through the second wiring 134.
  • each conductive layer 170 There is a conductive layer 180 on the top surface of each conductive layer 170.
  • the electric resistance of the conductive layer 180 is lower than the electric resistance of the conductive layer 170. Thereby, the voltage drop between the first terminal 112 and the first electrode 110 and the voltage drop between the second terminal 132 and the second electrode 130 can be suppressed.
  • the conductive layer 180 is positioned so as not to overlap the light emitting unit 140. For this reason, the conductive layer 180 does not need to have translucency.
  • the conductive layer 180 is made of, for example, Al or Ag.
  • the conductive layer 180 may include, for example, a Mo alloy layer on the top surface of the first conductive layer 110a, an Al alloy layer on the Mo alloy layer, and a Mo alloy layer on the Al alloy layer.
  • the plurality of first conductive layers 110a are arranged in the first direction (X direction in the figure).
  • Each first conductive layer 110a extends in a second direction (specifically, the Y direction in the figure) that intersects the first direction (specifically, orthogonal to the first direction).
  • the insulating layer 150 is on the first surface 102 of the substrate 100 and on the plurality of first conductive layers 110a.
  • the insulating layer 150 includes a photosensitive resin (for example, polyimide).
  • the insulating layer 150 has a plurality of openings 152.
  • the plurality of openings 152 are arranged in the second direction (Y direction in the figure).
  • Each opening 152 extends in the first direction (X direction in the figure).
  • the opening 152 exposes a part of the first conductive layer 110a. This part of the first conductive layer 110 a functions as the first electrode 110 of the light emitting unit 140.
  • the opening 152 has a first edge 152a and a second edge 152b.
  • the first edge 152a and the second edge 152b face each other and extend in the first direction (X direction in the figure).
  • the first edge 152a and the second edge 152b intersect with the plurality of first conductive layers 110a.
  • the plurality of first electrodes 110 are exposed between the first edge 152a and the second edge 152b.
  • the insulating layer 150 is not located between the light emitting units 140 adjacent to each other. For this reason, it is suppressed that the substance which degrades the light emission part 140 propagates via the light emission part 140 between the light emission parts 140 which mutually adjoin.
  • the first edge 152 a and the second edge 152 b are defined by the lower end of the inner surface of the opening 152.
  • the opening 152 in the cross section perpendicular to the first direction (the X direction in FIGS. 1 to 4), has a first inner surface and a second inner surface.
  • the second inner surface is on the opposite side of the first inner surface.
  • the first inner side surface of the opening 152 is inclined so that the upper end of the first inner side surface is located outside the lower end of the first inner side surface.
  • the second inner side surface of the opening 152 is inclined so that the upper end of the second inner side surface is located outside the lower end of the second inner side surface.
  • the first edge 152a is the lower end of the first inner surface.
  • the second edge 152b is the lower end of the second inner surface.
  • the insulating layer 150 has an opening 154. As shown in FIG. 7, the second conductive layer 130 a is connected to the second wiring 134 through the opening 154.
  • the partition wall 160 is on the insulating layer 150.
  • the partition 160 includes a photosensitive resin (for example, polyimide).
  • the plurality of partition walls 160 are arranged in the second direction (Y direction in the figure).
  • Each partition wall 160 extends in the first direction (X direction in the figure).
  • the width of the upper surface of the partition wall 160 is wider than the width of the lower surface of the partition wall 160 in a cross section perpendicular to the first direction (the X direction in FIGS. 1 to 4). More specifically, in the cross section perpendicular to the first direction (the X direction in FIGS. 1 to 4), the partition wall 160 has a first side surface and a second side surface.
  • the second side surface is on the opposite side of the first inner surface.
  • the first side surface of the partition wall 160 is inclined so that the upper end of the first side surface is located outside the lower end of the first side surface.
  • the second side surface of the partition wall 160 is inclined so that the upper end of the second side surface is located outside the lower end of the second side surface.
  • the lower surface of the partition wall 160 is in contact with the upper surface of the insulating layer 150 in any region.
  • the first surface 102 of the substrate 100 is not exposed from the insulating layer 150 in any region below the lower surface of the partition wall 160.
  • the insulating layer 150 includes polyimide
  • the substrate 100 includes glass
  • the adhesion strength between the lower surface of the partition wall 160 and the upper surface of the insulating layer 150 is It becomes higher than the adhesion strength between the one surface 102.
  • the entire lower surface of the partition wall 160 is firmly adhered to the upper surface of the insulating layer 150.
  • the organic layer 120a is on the first surface 102 of the substrate 100, on the plurality of first conductive layers 110a, and on the insulating layer 150.
  • the plurality of organic layers 120a are arranged in the second direction (Y direction in FIGS. 1 to 4).
  • the organic layers 120a adjacent to each other face each other with the partition wall 160 interposed therebetween.
  • a part of the organic layer 120a overlaps a part (first electrode 110) of the first conductive layer 110a. This part of the organic layer 120 a functions as the organic layer 120 of the light emitting unit 140.
  • the organic layer 120 a is not in contact with the partition wall 160.
  • a substance that degrades the organic layer 120a can be prevented from propagating from the partition wall 160 to the organic layer 120a.
  • the partition 160 may contain a substance (for example, water) that degrades the organic layer 120a.
  • this material may propagate from the organic layer 120 a to the partition wall 160.
  • the partition 160 includes the above-described substance, it is possible to suppress the propagation of the substance to the organic layer 120a.
  • the organic layer 120 b is on the upper surface of the partition wall 160.
  • the material included in the organic layer 120b is the same as the material included in the organic layer 120a.
  • the organic layer 120 a and the organic layer 120 b are formed by depositing an organic layer on the first surface 102 of the substrate 100 and the partition 160. In this case, the organic layer is separated into the organic layer 120 a and the organic layer 120 b by the partition wall 160.
  • the organic layer 120a has, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer.
  • the total thickness of the organic layer 120a is, for example, not less than 50 nm and not more than 200 nm. Holes move in the hole injection layer and the hole transport layer.
  • the thickness of the hole injection layer is, for example, not less than 50 nm and not more than 100 nm.
  • the thickness of the hole transport layer is thinner than the thickness of the hole injection layer.
  • the thickness of the hole transport layer is, for example, 20 nm or more and 50 nm or less.
  • the color of light from the light emitting layer is, for example, red, green, or blue.
  • electrons are transported.
  • the thickness of the electron transport layer is, for example, 5 nm or more and 100 nm or less.
  • the electron injection layer is made of an alkali metal compound (for example, LiF), a metal oxide (for example, aluminum oxide) or a metal complex (for example, lithium 8-hydroxyquinolate (Liq)).
  • the thickness of the electron injection layer is, for example, not less than 0.1 nm and not more than 10 nm.
  • One of the hole injection layer and the hole transport layer may be omitted.
  • One of the electron transport layer and the electron injection layer may be omitted.
  • the hole injection layer, hole transport layer, light emitting layer, electron transport layer, and electron injection layer are formed by, for example, a coating process. Specifically, for example, the hole injection layer, the hole transport layer, and the light emitting layer are formed by a coating process.
  • the electron transport layer and the electron injection layer are formed by vapor deposition.
  • the second conductive layer 130a is on the organic layer 120a.
  • a plurality of second conductive layers 130a are arranged in the second direction (Y direction in the figure).
  • Each second conductive layer 130a extends in the first direction (X direction in the figure).
  • the second conductive layers 130a adjacent to each other are opposed to each other with the partition wall 160 interposed therebetween.
  • a part of the second conductive layer 130a overlaps a part of the first conductive layer 110a (first electrode 110). This part of the second conductive layer 130 a functions as the second electrode 130 of the light emitting unit 140.
  • the conductive layer 130 b is provided on the upper surface of the partition wall 160.
  • the material included in the conductive layer 130b is the same as the material included in the second conductive layer 130a.
  • the second conductive layer 130 a and the conductive layer 130 b are formed by depositing a conductive layer on the first surface 102 and the partition 160 of the substrate 100. In this case, the conductive layer is separated into the second conductive layer 130 a and the conductive layer 130 b by the partition 160.
  • the first conductive layer 110a is a conductive layer having translucency. In this case, the second conductive layer 130a does not need to have translucency.
  • the second conductive layer 130a is a light-transmitting conductive layer. In this case, the first conductive layer 110a does not need to have translucency.
  • the first conductive layer 110a and the second conductive layer 130a are light-transmitting conductive layers
  • the first conductive layer 110a and the second conductive layer 130a include, for example, a metal oxide, and more specifically, for example, It contains ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IWZO (Indium Tungsten Zinc Oxide) or ZnO (Zinc Oxide).
  • the first conductive layer 110a and the second conductive layer 130a are conductive layers that do not have translucency
  • the first conductive layer 110a and the second conductive layer 130a include, for example, Al, Au, Ag, Pt, Mg, Sn, A metal selected from the first group consisting of Zn and In or an alloy of a metal selected from the first group is included.
  • the covering layer 200 covers the insulating layer 150, the plurality of light emitting portions 140, and the plurality of partition walls 160.
  • the coating layer 200 seals the insulating layer 150, the plurality of light emitting units 140, and the plurality of partition walls 160.
  • the covering layer 200 is formed by ALD (Atomic Layer Deposition). Accordingly, the covering layer 200 continuously covers the side surfaces and the upper surface of the insulating layer 150, the light emitting unit 140, and the partition wall 160.
  • the covering layer 200 includes, for example, an insulating material, more specifically, for example, a metal oxide.
  • the covering layer 200 includes, for example, a titanium oxide layer and an aluminum oxide layer. In this case, the aluminum oxide layer is on the titanium oxide layer or below the titanium oxide layer.
  • the thickness of the coating layer 200 is, for example, not less than 50 nm and not more than 300 nm.
  • the covering layer 200 may be formed by, for example, CVD (Chemical Vapor Deposition) or sputtering.
  • the covering layer 200 includes, for example, a SiO 2 layer or a SiN layer.
  • the film thickness of the coating layer 200 is, for example, not less than 10 nm and not more than 1000 nm.
  • the covering layer 200 may be covered with a resin layer.
  • the resin layer is provided to protect the covering layer 200.
  • the resin layer contains, for example, an epoxy resin or an acrylic resin.
  • the planar shape of the light emitting unit 140 is a rectangle, and has a first side 142, a second side 144, a third side 146, and a fourth side 148.
  • the second side 144 is on the opposite side of the first side 142.
  • the third side 146 and the fourth side 148 are between the first side 142 and the second side 144.
  • the fourth side 148 is on the opposite side of the third side 146.
  • the first side 142 and the second side 144 of the light emitting unit 140 are defined by the opening 152 of the insulating layer 150, and the third side of the light emitting unit 140 is shown in FIGS. 6 and 9.
  • 146 and the fourth side 148 are defined by the first conductive layer 110a (first electrode 110).
  • the first edge 152a of the insulating layer 150 includes a portion intersecting the first electrode 110 (first conductive layer 110a), and the second edge 152b of the insulating layer 150 is A portion intersecting with one electrode 110 (first conductive layer 110a) is included.
  • the first side 142 is defined by the aforementioned portion of the first edge 152a.
  • the second side 144 is defined by the above-described portion of the second edge 152b.
  • the first conductive layer 110a has an edge 116 (end) and an edge 118 (end).
  • the edge 116 and the edge 118 extend in the second direction (Y direction in the figure).
  • the edge 116 includes a portion that intersects the opening 152
  • the edge 118 includes a portion that intersects the opening 152.
  • Third side 146 is defined by the aforementioned portion of edge 116.
  • the fourth side 148 is defined by the aforementioned portion of the edge 118.
  • a method for manufacturing the light emitting device 10 will be described.
  • a conductive layer is formed on the first surface 102 of the substrate 100, and this conductive layer is patterned.
  • a plurality of conductive layers 170 (first conductive layer 110a, first wiring 114, and second wiring 134) are formed.
  • a conductive layer 180 is formed on the upper surface of each conductive layer 170.
  • the insulating layer 150 is formed on the first surface 102 of the substrate 100 and the plurality of conductive layers 170. Next, a plurality of openings 152 and a plurality of openings 154 are formed in the insulating layer 150.
  • a plurality of partition walls 160 are formed on the insulating layer 150.
  • an organic layer is formed on the insulating layer 150 and the plurality of partition walls 160. Accordingly, the organic layer is separated into the organic layer 120a and the organic layer 120b by the partition 160.
  • a conductive layer is formed over the insulating layer 150 and the plurality of partition walls 160. Accordingly, the conductive layer is separated into the second conductive layer 130a and the conductive layer 130b by the partition 160.
  • the coating layer 200 is formed by ALD on the first surface 102 of the substrate 100, the insulating layer 150, and the plurality of partition walls 160.
  • the insulating layer 150, the plurality of light emitting units 140, and the plurality of partition walls 160 are sealed by the covering layer 200.
  • the insulating layer 150 is not positioned between the light emitting units 140 arranged in the first direction (X direction in the drawing). For this reason, it is suppressed that the substance which degrades the light emission part 140 which propagates the insulating layer 150 propagates to the 3rd edge
  • the above-described substances that degrade the light emitting unit 140 may be generated outside the region including the plurality of light emitting units 140 arranged in a matrix, for example, due to ultraviolet rays. It became clear that there was sex. Further examination by the present inventors has revealed that the above-described substances tend to propagate widely in the insulating layer 150 when the insulating layer 150 contains a photosensitive resin (eg, polyimide). This is presumed to be because the photosensitive resin functions to propagate the above-described substances. Further examination by the present inventor has revealed that the above-described substances tend to propagate widely in the insulating layer 150 when the coating layer 200 is formed by ALD.
  • a photosensitive resin eg, polyimide
  • the above substances are prevented from being discharged to the outside of the insulating layer 150.
  • the insulating layer 150 includes polyimide and the covering layer 200 is formed by ALD, the above-described substances are prevented from propagating to the light emitting unit 140 through the insulating layer 150. it can.
  • FIG. 10 is a diagram showing a modification of FIG.
  • an insulating layer 150 is formed between two light emitting units 140 adjacent to each other so that the third side 146 of one light emitting unit 140 and the fourth side 148 of the other light emitting unit 140 are exposed. May be.
  • the width of the insulating layer 150 between the light emitting units 140 adjacent to each other is narrow. That is, the insulating layer 150 is formed between the light emitting units 140 so as to be separated from the third side 146 of one light emitting unit 140 and the fourth side 148 of the other light emitting unit 140. For this reason, it can suppress that the substance which degrades the light emission part 140 propagates to the light emission part 140 through the insulating layer 150 between the light emission parts 140 adjacent to each other.
  • FIG. 11 is a diagram showing a first modification of FIG. As shown in this figure, the opening 152 of the insulating layer 150 may be connected to a region outside the insulating layer 150. Also in this modified example, similarly to the embodiment, a substance that degrades the light emitting unit 140 is suppressed from propagating to the light emitting unit 140 through the insulating layer 150.
  • FIG. 12 is a diagram showing a second modification of FIG.
  • the plurality of openings 152 are arranged in the first direction (X direction in the figure).
  • a plurality of light emitting portions 140 are arranged in the first direction (X direction in the figure).
  • the opening 152 shown in FIG. 3 is separated into a plurality of openings 152 along the first direction (X direction in the drawing).
  • FIG. 13 is a plan view showing the light emitting device 10 according to the first embodiment.
  • the light emitting device 10 according to this example is the same as the light emitting device 10 according to the embodiment except for the following points.
  • the light emitting device 10 includes a first potential supply unit 192 and a second potential supply unit 194.
  • the first potential supply unit 192 provides a first potential.
  • the second potential supply unit 194 provides a second potential.
  • the first potential and the second potential are, for example, a power supply potential and a ground potential, respectively, or a ground potential and a power supply potential.
  • a part of the first conductive layer 110a (third first conductive layer) among the plurality of first conductive layers 110a is electrically connected to the first potential supply unit 192 through the first wiring 114. .
  • some other first conductive layers 110a (the first first conductive layer and the second first conductive layer) of the plurality of first conductive layers 110a are connected to the first potential supply unit 192. It is not electrically connected to and is electrically floating.
  • the first conductive layer 110a (first first conductive layer) at one end of the plurality of first conductive layers 110a and the first conductive layer 110a (first step) at the other end of the plurality of first conductive layers 110a. 2 first conductive layer) is electrically floating.
  • a plurality of first conductive layers 110a (first first conductive layers) between the first conductive layer 110a at one end and the first conductive layer 110a at the other end are the first potential supply unit. 192 is electrically connected.
  • a part of the second conductive layer 130a (third second conductive layer) among the plurality of second conductive layers 130a is electrically connected to the second potential supply unit 194 through the second wiring 134.
  • the other second conductive layer 130a (the first second conductive layer and the second second conductive layer) of the plurality of second conductive layers 130a is connected to the second potential supply unit 194. It is not electrically connected to and is electrically floating.
  • the second conductive layer 130a (first second conductive layer) at one end of the plurality of second conductive layers 130a and the second conductive layer 130a (first step) at the other end of the plurality of second conductive layers 130a. 2nd conductive layer) is electrically floating.
  • a plurality of second conductive layers 130a (first second conductive layers) between the second conductive layer 130a at one end and the second conductive layer 130a at the other end described above are the second potential supply unit. 194 is electrically connected.
  • the first surface 102 of the substrate 100 includes a region 102a and a region 102b.
  • the region 102b surrounds the region 102a.
  • the first conductive layer 110a at one end of the plurality of first conductive layers 110a, the first conductive layer 110a at the other end of the plurality of first conductive layers 110a, and the first conductive layer 110a at one end of the plurality of second conductive layers 130a.
  • the light emitting unit 140 that is electrically connected to one of the second conductive layer 130a and the second conductive layer 130a at one end of the plurality of second conductive layers 130a is located.
  • a potential for causing the organic layer 120 to emit light is not applied to the light emitting unit 140 in the region 102b.
  • the light emitting unit 140 in the region 102b functions as a dummy light emitting unit.
  • a potential for causing the organic layer 120 to emit light is applied to the light emitting unit 140 in the region 102a.
  • the light-emitting portion 140 (first light-emitting portion) in the region 102a includes the first electrode 110 and the second conductive layer 130a (third second conductive layer) of the first conductive layer 110a (third first conductive layer). Layer) of the second electrode 130.
  • the volume of the insulating layer 150 surrounding the light emitting portion 140 located in the region 102b is larger than the volume of the insulating layer 150 surrounding the light emitting portion 140 located in the region 102a, and thus contains a large amount of a substance that degrades the light emitting portion 140. Guessed.
  • the light emitting unit 140 located outside of the plurality of light emitting units 140 arranged in a matrix is a dummy. Therefore, it is possible to suppress a difference in the progress of deterioration between the light emitting units 140 located outside of the light emitting units 140 in the region 102a and the other light emitting units 140. This is because the light emitting portion 140 in the region 102a is separated from the insulating layer 150 located outside the region 102b by the light emitting portion 140 (dummy light emitting portion) in the region 102b.

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  • Electroluminescent Light Sources (AREA)

Abstract

According to the present invention, each of light-emitting parts (140) has a first side (142), a second side (144), a third side (146), and a fourth side (148). The first side (142) is defined by an insulating layer (150). The second side (144) is opposite to the first side (142) and is defined by the insulating layer (150). The third side (146) extends in the direction (Y-direction in the drawing) crossing the first side (142) and the second side (144) and is exposed from the insulating layer (150). The fourth side (148) is opposite to the third side (146) and is exposed from the insulating layer (150).

Description

発光装置Light emitting device
　本発明は、発光装置に関する。 The present invention relates to a light emitting device.
　近年、有機層を有する発光装置が開発されている。このような発光装置は、例えばディスプレイに用いられることがある。この場合、発光装置は、基板及び基板上の複数の発光部を有している。各発光部は、第１電極、第２電極及び第１電極と第２電極の間の有機層を有している。より詳細には、発光装置は、第１方向に延伸する第１導電層及び第１方向に直交する第２方向に延伸する第２導電層を有している。第１導電層は、第２導電層と重なる部分を有する。第２導電層は、第１導電層と重なる部分を有する。第１導電層の上記した部分は発光部の第１電極として機能する。第２導電層の上記した部分は発光部の第２電極として機能する。 In recent years, light emitting devices having an organic layer have been developed. Such a light emitting device may be used for a display, for example. In this case, the light emitting device has a substrate and a plurality of light emitting units on the substrate. Each light emitting unit includes a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode. More specifically, the light emitting device has a first conductive layer extending in the first direction and a second conductive layer extending in a second direction orthogonal to the first direction. The first conductive layer has a portion overlapping the second conductive layer. The second conductive layer has a portion overlapping the first conductive layer. The above-described portion of the first conductive layer functions as the first electrode of the light emitting unit. The above-described portion of the second conductive layer functions as the second electrode of the light emitting unit.
　特許文献１には、発光部の各辺を画定するための絶縁層が記載されている。絶縁層は、基板上及び第１導電層上にある。絶縁層は、例えばポリイミドからなる。絶縁層は、第１導電層の一部（発光部の第１電極として機能する部分）を露出する開口を有している。第２導電層は、第２導電層の一部（発光部の第２電極として機能する部分）が開口と重なるように、絶縁層上及び開口上に位置する。この場合、発光部の各辺は、開口の縁によって画定される。 Patent Document 1 describes an insulating layer for defining each side of a light emitting portion. The insulating layer is on the substrate and the first conductive layer. The insulating layer is made of polyimide, for example. The insulating layer has an opening that exposes a part of the first conductive layer (a portion that functions as the first electrode of the light emitting portion). The second conductive layer is located on the insulating layer and on the opening so that a part of the second conductive layer (a part functioning as the second electrode of the light emitting unit) overlaps with the opening. In this case, each side of the light emitting unit is defined by the edge of the opening.
特開平１１－９７１８２号公報JP-A-11-97182
　上記したように、発光装置では、発光部の縁（辺）を画定するために、開口を有する絶縁層が形成されることがある。一方、本発明者が検討したところ、発光部を劣化させる物質が上記した絶縁層を伝搬する可能性があることが明らかとなった。 As described above, in the light emitting device, an insulating layer having an opening may be formed in order to define an edge (side) of the light emitting portion. On the other hand, when the present inventor examined, it became clear that the substance which degrades a light emission part may propagate through the above-mentioned insulating layer.
　本発明が解決しようとする課題としては、発光部の辺を画定するために絶縁層を用いたとしても、発光部を劣化させる物質が絶縁層を介して広く伝搬することを抑制することが一例として挙げられる。 As an example of the problem to be solved by the present invention, even if an insulating layer is used to demarcate the sides of the light emitting portion, it is an example to suppress a substance that deteriorates the light emitting portion from being widely propagated through the insulating layer. As mentioned.
　請求項１に記載の発明は、
　基板と、
　前記基板上の絶縁層と、
　前記基板上で前記絶縁層から露出し、各々が第１電極、第２電極及び前記第１電極と前記第２電極の間の有機層を有する複数の発光部と、
を備え、
　前記発光部は、前記絶縁層によって画定された第１辺、前記第１辺とは反対側にあって前記絶縁層によって画定された第２辺及び前記第１辺と前記第２辺に交差する方向に延伸して前記絶縁層から露出した第３辺を有する発光装置である。 The invention described in claim 1
A substrate,
An insulating layer on the substrate;
A plurality of light emitting portions exposed from the insulating layer on the substrate, each having a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode;
With
The light emitting unit intersects the first side defined by the insulating layer, the second side defined by the insulating layer on the side opposite to the first side, and the first side and the second side. The light emitting device has a third side extending in a direction and exposed from the insulating layer.
　上述した目的、およびその他の目的、特徴および利点は、以下に述べる好適な実施の形態、およびそれに付随する以下の図面によってさらに明らかになる。 The above-described object and other objects, features, and advantages will be further clarified by a preferred embodiment described below and the following drawings attached thereto.
実施形態に係る発光装置を示す平面図である。It is a top view which shows the light-emitting device which concerns on embodiment. 図１から被覆層を取り除いた図である。It is the figure which removed the coating layer from FIG. 図２から第２導電層及び隔壁を取り除いた図である。FIG. 3 is a view in which a second conductive layer and a partition wall are removed from FIG. 2. 図３から絶縁層を取り除いた図である。It is the figure which removed the insulating layer from FIG. 図２のＡ－Ａ断面図である。FIG. 3 is a cross-sectional view taken along line AA in FIG. 2. 図２のＢ－Ｂ断面図である。FIG. 3 is a sectional view taken along line BB in FIG. 図２のＣ－Ｃ断面図である。FIG. 3 is a cross-sectional view taken along the line CC of FIG. 図２のＤ－Ｄ断面図である。FIG. 3 is a DD sectional view of FIG. 2. 図３に示した開口を拡大した図である。It is the figure which expanded the opening shown in FIG. 図９の変形例を示す図である。It is a figure which shows the modification of FIG. 図３の第１の変形例を示す図である。It is a figure which shows the 1st modification of FIG. 図３の第２の変形例を示す図である。It is a figure which shows the 2nd modification of FIG. 実施例１に係る発光装置を示す平面図である。1 is a plan view showing a light emitting device according to Example 1. FIG.
　以下、本発明の実施の形態について、図面を用いて説明する。尚、すべての図面において、同様な構成要素には同様の符号を付し、適宜説明を省略する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.
　図１は、実施形態に係る発光装置１０を示す平面図である。図２は、図１から被覆層２００を取り除いた図である。図３は、図２から第２導電層１３０ａ及び隔壁１６０を取り除いた図である。図４は、図３から絶縁層１５０を取り除いた図である。図５は、図２のＡ－Ａ断面図である。図６は、図２のＢ－Ｂ断面図である。図７は、図２のＣ－Ｃ断面図である。図８は、図２のＤ－Ｄ断面図である。図９は、図３に示した開口１５２を拡大した図である。 FIG. 1 is a plan view showing a light emitting device 10 according to the embodiment. FIG. 2 is a view in which the covering layer 200 is removed from FIG. FIG. 3 is a diagram in which the second conductive layer 130a and the partition 160 are removed from FIG. FIG. 4 is a diagram in which the insulating layer 150 is removed from FIG. FIG. 5 is a cross-sectional view taken along the line AA in FIG. 6 is a cross-sectional view taken along the line BB in FIG. 7 is a cross-sectional view taken along the line CC of FIG. FIG. 8 is a sectional view taken along the line DD of FIG. FIG. 9 is an enlarged view of the opening 152 shown in FIG.
　図２に示すように、発光装置１０は、基板１００、絶縁層１５０及び複数の発光部１４０を備えている。図５及び図８に示すように、絶縁層１５０は、基板１００上にある。図３に示すように、複数の発光部１４０は、基板１００上で絶縁層１５０から露出している。図５及び図６に示すように、各発光部１４０は、基板１００上にある。各発光部１４０は、第１電極１１０、有機層１２０及び第２電極１３０を有する。有機層１２０は、第１電極１１０と第２電極１３０の間にある。図９に示すように、各発光部１４０は、第１辺１４２、第２辺１４４、第３辺１４６及び第４辺１４８を有している。第１辺１４２は、絶縁層１５０によって画定されている。第２辺１４４は、第１辺１４２とは反対側にあって絶縁層１５０によって画定されている。第３辺１４６は、第１辺１４２と第２辺１４４に交差する方向（図中Ｙ方向）に延伸して絶縁層１５０から露出している。第４辺１４８は、第３辺１４６とは反対側にあって絶縁層１５０から露出している。 As shown in FIG. 2, the light emitting device 10 includes a substrate 100, an insulating layer 150, and a plurality of light emitting units 140. As shown in FIGS. 5 and 8, the insulating layer 150 is on the substrate 100. As shown in FIG. 3, the plurality of light emitting units 140 are exposed from the insulating layer 150 on the substrate 100. As shown in FIGS. 5 and 6, each light emitting unit 140 is on the substrate 100. Each light emitting unit 140 includes a first electrode 110, an organic layer 120, and a second electrode 130. The organic layer 120 is between the first electrode 110 and the second electrode 130. As shown in FIG. 9, each light emitting unit 140 has a first side 142, a second side 144, a third side 146, and a fourth side 148. The first side 142 is defined by the insulating layer 150. The second side 144 is on the side opposite to the first side 142 and is defined by the insulating layer 150. The third side 146 extends in the direction intersecting the first side 142 and the second side 144 (the Y direction in the drawing) and is exposed from the insulating layer 150. The fourth side 148 is on the side opposite to the third side 146 and is exposed from the insulating layer 150.
　図９に示す例において、互いに隣接する発光部１４０は、一方の発光部１４０の第３辺１４６と他方の発光部１４０の第４辺１４８が互いに対向するように並んでいる。基板１００は、互いに隣接する発光部１４０の間で絶縁層１５０から露出している。より具体的には、図９に示す例では、絶縁層１５０は、第１領域１５０ａ及び第２領域１５０ｂを含んでいる。第１領域１５０ａは、第１縁１５２ａを有する。第２領域１５０ｂは、第２縁１５２ｂを有する。第１縁１５２ａと第２縁１５２ｂは互いに対向している。図９に示す例において、第１縁１５２ａは、絶縁層１５０の開口１５２の縁の一部（第３縁）であり、第２縁１５２ｂは、絶縁層１５０の開口１５２の縁の他の一部（第４縁）である。開口１５２内の各発光部１４０の第１辺１４２は、第１縁１５２ａによって画定されている。開口１５２内の各発光部１４０の第２辺１４４は、第２縁１５２ｂによって画定されている。以下、詳細に説明する。 In the example shown in FIG. 9, the light emitting units 140 adjacent to each other are arranged such that the third side 146 of one light emitting unit 140 and the fourth side 148 of the other light emitting unit 140 face each other. The substrate 100 is exposed from the insulating layer 150 between the light emitting units 140 adjacent to each other. More specifically, in the example shown in FIG. 9, the insulating layer 150 includes a first region 150a and a second region 150b. The first region 150a has a first edge 152a. The second region 150b has a second edge 152b. The first edge 152a and the second edge 152b are opposed to each other. In the example shown in FIG. 9, the first edge 152 a is a part (third edge) of the edge of the opening 152 of the insulating layer 150, and the second edge 152 b is the other edge of the opening 152 of the insulating layer 150. Part (fourth edge). A first side 142 of each light emitting unit 140 in the opening 152 is defined by a first edge 152a. The second side 144 of each light emitting unit 140 in the opening 152 is defined by the second edge 152b. Details will be described below.
　図１～図９に示す例において、発光装置１０は、ディスプレイである。発光装置１０は、基板１００、導電層１７０、導電層１８０、絶縁層１５０、有機層１２０ａ、第２導電層１３０ａ、隔壁１６０及び被覆層２００を有している。 In the example shown in FIGS. 1 to 9, the light emitting device 10 is a display. The light emitting device 10 includes a substrate 100, a conductive layer 170, a conductive layer 180, an insulating layer 150, an organic layer 120a, a second conductive layer 130a, a partition wall 160, and a coating layer 200.
　図５～図８に示すように、基板１００は、第１面１０２及び第２面１０４を有している。第２面１０４は、第１面１０２の反対側にあり、基板１００の裏面である。図１～図４に示す例では、第１面１０２の形状は、矩形である。ただし、第１面１０２の形状は、例えば矩形以外の多角形であってもよい。 As shown in FIGS. 5 to 8, the substrate 100 has a first surface 102 and a second surface 104. The second surface 104 is on the opposite side of the first surface 102 and is the back surface of the substrate 100. In the example shown in FIGS. 1 to 4, the shape of the first surface 102 is a rectangle. However, the shape of the first surface 102 may be a polygon other than a rectangle, for example.
　発光装置１０は、ボトムエミッション及びトップエミッションのいずれであってもよい。発光装置１０がボトムエミッションである場合、複数の発光部１４０からの光は、基板１００の第２面１０４から出射される。この場合、基板１００は、透光性の材料（例えばガラス又は樹脂）からなる。これに対して、発光装置１０がトップエミッションである場合、複数の発光部１４０からの光は、基板１００の第１面１０２の上方から出射される。この場合、基板１００は、上記した透光性の材料からなってもよいし、又は透光性を有しない材料からなってもよい。 The light emitting device 10 may be either bottom emission or top emission. When the light emitting device 10 is bottom emission, light from the plurality of light emitting units 140 is emitted from the second surface 104 of the substrate 100. In this case, the substrate 100 is made of a translucent material (for example, glass or resin). On the other hand, when the light emitting device 10 is top emission, the light from the plurality of light emitting units 140 is emitted from above the first surface 102 of the substrate 100. In this case, the substrate 100 may be made of the above-described translucent material or may be made of a material that does not have translucency.
　基板１００は、可撓性を有していてもよいし、又は可撓性を有していなくてもよい。基板１００が可撓性を有する場合、基板１００の厚さは、例えば１０μｍ以上１０００μｍ以下である。基板１００が可撓性を有し、かつガラスを含む場合、基板１００の厚さは、例えば２００μｍ以下である。基板１００が可撓性を有し、かつ樹脂を含む場合、基板１００は、例えばＰＥＮ（ポリエチレンナフタレート）、ＰＥＳ（ポリエーテルサルホン）、ＰＥＴ（ポリエチレンテレフタラート）又はポリイミドを含む。なお、基板１００の第１面１０２（好ましくは、第１面１０２及び第２面１０４の双方）は、無機バリア膜（例えばＳｉＮｘ又はＳｉＯＮ）により覆われていてもよい。この場合、基板１００が水蒸気透過率の高い材料（例えば樹脂）を含んでいても、水蒸気が基板１００の第１面１０２よりも上に達することが抑制される。 The substrate 100 may have flexibility or may not have flexibility. When the substrate 100 has flexibility, the thickness of the substrate 100 is, for example, not less than 10 μm and not more than 1000 μm. When the substrate 100 has flexibility and includes glass, the thickness of the substrate 100 is, for example, 200 μm or less. When the substrate 100 is flexible and includes a resin, the substrate 100 includes, for example, PEN (polyethylene naphthalate), PES (polyethersulfone), PET (polyethylene terephthalate), or polyimide. The first surface 102 (preferably both the first surface 102 and the second surface 104) of the substrate 100 may be covered with an inorganic barrier film (eg, SiN x or SiON). In this case, even if the substrate 100 includes a material (for example, resin) having a high water vapor transmission rate, the water vapor is prevented from reaching the first surface 102 of the substrate 100.
　図１～図４に示すように、複数の導電層１７０は、基板１００の第１面１０２上にある。複数の導電層１７０は、複数の導電層１７０ａ及び複数の導電層１７０ｂを含んでいる。各導電層１７０ａは、第１導電層１１０ａ及び第１配線１１４を含む。第１導電層１１０ａは、導電層１７０ａの一部である。第１配線１１４は、導電層１７０ａの他の一部である。第１導電層１１０ａと第１配線１１４は、互いに接続している。各導電層１７０ｂは、第２配線１３４を含む。 As shown in FIGS. 1 to 4, the plurality of conductive layers 170 are on the first surface 102 of the substrate 100. The plurality of conductive layers 170 include a plurality of conductive layers 170a and a plurality of conductive layers 170b. Each conductive layer 170 a includes a first conductive layer 110 a and a first wiring 114. The first conductive layer 110a is a part of the conductive layer 170a. The first wiring 114 is another part of the conductive layer 170a. The first conductive layer 110a and the first wiring 114 are connected to each other. Each conductive layer 170 b includes a second wiring 134.
　第１配線１１４の一端には、第１端子１１２が位置している。第１端子１１２には、電位が与えられる。これにより、第１端子１１２の電位は、第１配線１１４を介して第１導電層１１０ａ（第１電極１１０）に与えられる。第２配線１３４の一端には、第２端子１３２が位置している。第２端子１３２には、電位が与えられる。これにより、第２端子１３２の電位は、第２配線１３４を介して第２導電層１３０ａ（第２電極１３０）に与えられる。 The first terminal 112 is located at one end of the first wiring 114. A potential is applied to the first terminal 112. Thereby, the potential of the first terminal 112 is applied to the first conductive layer 110a (first electrode 110) through the first wiring 114. The second terminal 132 is located at one end of the second wiring 134. A potential is applied to the second terminal 132. Thereby, the potential of the second terminal 132 is applied to the second conductive layer 130a (second electrode 130) through the second wiring 134.
　各導電層１７０の上面上には、導電層１８０がある。導電層１８０の電気抵抗は、導電層１７０の電気抵抗よりも低い。これにより、第１端子１１２と第１電極１１０の間の電圧降下及び第２端子１３２と第２電極１３０の間の電圧降下を抑制することができる。導電層１８０は、発光部１４０と重ならないように位置している。このため、導電層１８０は、透光性を有する必要がない。具体的には、導電層１８０は、例えばＡｌ又はＡｇからなる。その他の例として、導電層１８０は、例えば第１導電層１１０ａの上面上のＭｏ合金層、Ｍｏ合金層上のＡｌ合金層及びＡｌ合金層上のＭｏ合金層を含んでいてもよい。 There is a conductive layer 180 on the top surface of each conductive layer 170. The electric resistance of the conductive layer 180 is lower than the electric resistance of the conductive layer 170. Thereby, the voltage drop between the first terminal 112 and the first electrode 110 and the voltage drop between the second terminal 132 and the second electrode 130 can be suppressed. The conductive layer 180 is positioned so as not to overlap the light emitting unit 140. For this reason, the conductive layer 180 does not need to have translucency. Specifically, the conductive layer 180 is made of, for example, Al or Ag. As another example, the conductive layer 180 may include, for example, a Mo alloy layer on the top surface of the first conductive layer 110a, an Al alloy layer on the Mo alloy layer, and a Mo alloy layer on the Al alloy layer.
　図４に示すように、複数の第１導電層１１０ａは、第１方向（図中、Ｘ方向）に並んでいる。各第１導電層１１０ａは、第１方向に交わる（具体的には、第１方向に直交する）第２方向（図中、Ｙ方向）に延伸している。 As shown in FIG. 4, the plurality of first conductive layers 110a are arranged in the first direction (X direction in the figure). Each first conductive layer 110a extends in a second direction (specifically, the Y direction in the figure) that intersects the first direction (specifically, orthogonal to the first direction).
　図５及び図８に示すように、絶縁層１５０は、基板１００の第１面１０２上及び複数の第１導電層１１０ａ上にある。絶縁層１５０は、感光性樹脂（例えばポリイミド）を含んでいる。図３に示すように、絶縁層１５０は、複数の開口１５２を有する。複数の開口１５２は、第２方向（図中、Ｙ方向）に並んでいる。各開口１５２は、第１方向（図中、Ｘ方向）に延伸している。開口１５２は、第１導電層１１０ａの一部を露出している。第１導電層１１０ａのこの一部は、発光部１４０の第１電極１１０として機能する。 As shown in FIGS. 5 and 8, the insulating layer 150 is on the first surface 102 of the substrate 100 and on the plurality of first conductive layers 110a. The insulating layer 150 includes a photosensitive resin (for example, polyimide). As shown in FIG. 3, the insulating layer 150 has a plurality of openings 152. The plurality of openings 152 are arranged in the second direction (Y direction in the figure). Each opening 152 extends in the first direction (X direction in the figure). The opening 152 exposes a part of the first conductive layer 110a. This part of the first conductive layer 110 a functions as the first electrode 110 of the light emitting unit 140.
　より詳細には、図９に示すように、開口１５２は、第１縁１５２ａ及び第２縁１５２ｂを有する。第１縁１５２ａ及び第２縁１５２ｂは、互いに対向しており、第１方向（図中、Ｘ方向）に延伸している。第１縁１５２ａ及び第２縁１５２ｂは、複数の第１導電層１１０ａと交差している。第１縁１５２ａと第２縁１５２ｂの間では複数の第１電極１１０が露出する。言い換えると、互いに隣接する発光部１４０の間には、絶縁層１５０が位置していない。このため、発光部１４０を劣化させる物質が、互いに隣接する発光部１４０の間で発光部１４０を介して伝搬することが抑制される。 More specifically, as shown in FIG. 9, the opening 152 has a first edge 152a and a second edge 152b. The first edge 152a and the second edge 152b face each other and extend in the first direction (X direction in the figure). The first edge 152a and the second edge 152b intersect with the plurality of first conductive layers 110a. The plurality of first electrodes 110 are exposed between the first edge 152a and the second edge 152b. In other words, the insulating layer 150 is not located between the light emitting units 140 adjacent to each other. For this reason, it is suppressed that the substance which degrades the light emission part 140 propagates via the light emission part 140 between the light emission parts 140 which mutually adjoin.
　なお、図５に示すように、第１縁１５２ａ及び第２縁１５２ｂは、開口１５２の内側面の下端によって画定されている。詳細には、図５に示すように、第１方向（図１～図４のＸ方向）に垂直な断面において、開口１５２は、第１内側面及び第２内側面を有する。第２内側面は、第１内側面の反対側にある。開口１５２の第１内側面は、第１内側面の上端が第１内側面の下端よりも外側に位置するように傾いている。開口１５２の第２内側面は、第２内側面の上端が第２内側面の下端よりも外側に位置するように傾いている。第１縁１５２ａは、第１内側面の下端である。第２縁１５２ｂは、第２内側面の下端である。 As shown in FIG. 5, the first edge 152 a and the second edge 152 b are defined by the lower end of the inner surface of the opening 152. Specifically, as shown in FIG. 5, in the cross section perpendicular to the first direction (the X direction in FIGS. 1 to 4), the opening 152 has a first inner surface and a second inner surface. The second inner surface is on the opposite side of the first inner surface. The first inner side surface of the opening 152 is inclined so that the upper end of the first inner side surface is located outside the lower end of the first inner side surface. The second inner side surface of the opening 152 is inclined so that the upper end of the second inner side surface is located outside the lower end of the second inner side surface. The first edge 152a is the lower end of the first inner surface. The second edge 152b is the lower end of the second inner surface.
　絶縁層１５０は、開口１５４を有する。図７に示すように、第２導電層１３０ａは、開口１５４を介して第２配線１３４に接続している。 The insulating layer 150 has an opening 154. As shown in FIG. 7, the second conductive layer 130 a is connected to the second wiring 134 through the opening 154.
　図５、図７及び図８に示すように、隔壁１６０は、絶縁層１５０上にある。隔壁１６０は、感光性樹脂（例えばポリイミド）を含んでいる。図２に示すように、複数の隔壁１６０が第２方向（図中、Ｙ方向）に並んでいる。各隔壁１６０は、第１方向（図中、Ｘ方向）に延伸している。図５及び図７に示すように、第１方向（図１～図４のＸ方向）に垂直な断面において、隔壁１６０の上面の幅は、隔壁１６０の下面の幅よりも広い。より詳細には、第１方向（図１～図４のＸ方向）に垂直な断面において、隔壁１６０は、第１側面及び第２側面を有している。第２側面は、第１内側面の反対側にある。隔壁１６０の第１側面は、第１側面の上端が第１側面の下端よりも外側に位置するように傾いている。隔壁１６０の第２側面は、第２側面の上端が第２側面の下端よりも外側に位置するように傾いている。 As shown in FIGS. 5, 7, and 8, the partition wall 160 is on the insulating layer 150. The partition 160 includes a photosensitive resin (for example, polyimide). As shown in FIG. 2, the plurality of partition walls 160 are arranged in the second direction (Y direction in the figure). Each partition wall 160 extends in the first direction (X direction in the figure). As shown in FIGS. 5 and 7, the width of the upper surface of the partition wall 160 is wider than the width of the lower surface of the partition wall 160 in a cross section perpendicular to the first direction (the X direction in FIGS. 1 to 4). More specifically, in the cross section perpendicular to the first direction (the X direction in FIGS. 1 to 4), the partition wall 160 has a first side surface and a second side surface. The second side surface is on the opposite side of the first inner surface. The first side surface of the partition wall 160 is inclined so that the upper end of the first side surface is located outside the lower end of the first side surface. The second side surface of the partition wall 160 is inclined so that the upper end of the second side surface is located outside the lower end of the second side surface.
　なお、図２に示す例では、隔壁１６０の下面は、どの領域においても、絶縁層１５０の上面に接している。言い換えると、隔壁１６０の下面下では、どの領域においても、基板１００の第１面１０２が絶縁層１５０から露出していない。例えば隔壁１６０がポリイミドを含み、絶縁層１５０がポリイミドを含み、基板１００がガラスを含む場合、隔壁１６０の下面と絶縁層１５０の上面の間の密着強度は、隔壁１６０の下面と基板１００の第１面１０２の間の密着強度よりも高くなる。このような場合、図２に示す例では、隔壁１６０の下面全体が絶縁層１５０の上面に強固に密着する。 In the example shown in FIG. 2, the lower surface of the partition wall 160 is in contact with the upper surface of the insulating layer 150 in any region. In other words, the first surface 102 of the substrate 100 is not exposed from the insulating layer 150 in any region below the lower surface of the partition wall 160. For example, in the case where the partition wall 160 includes polyimide, the insulating layer 150 includes polyimide, and the substrate 100 includes glass, the adhesion strength between the lower surface of the partition wall 160 and the upper surface of the insulating layer 150 is It becomes higher than the adhesion strength between the one surface 102. In such a case, in the example illustrated in FIG. 2, the entire lower surface of the partition wall 160 is firmly adhered to the upper surface of the insulating layer 150.
　図５～図７に示すように、有機層１２０ａは、基板１００の第１面１０２上、複数の第１導電層１１０ａ上及び絶縁層１５０上にある。図５に示すように、複数の有機層１２０ａが第２方向（図１～図４のＹ方向）に並んでいる。互いに隣接する有機層１２０ａは、隔壁１６０を挟んで互いに対向している。図５及び図６に示すように、有機層１２０ａの一部は、第１導電層１１０ａの一部（第１電極１１０）と重なっている。有機層１２０ａのこの一部は、発光部１４０の有機層１２０として機能する。 As shown in FIGS. 5 to 7, the organic layer 120a is on the first surface 102 of the substrate 100, on the plurality of first conductive layers 110a, and on the insulating layer 150. As shown in FIG. 5, the plurality of organic layers 120a are arranged in the second direction (Y direction in FIGS. 1 to 4). The organic layers 120a adjacent to each other face each other with the partition wall 160 interposed therebetween. As shown in FIGS. 5 and 6, a part of the organic layer 120a overlaps a part (first electrode 110) of the first conductive layer 110a. This part of the organic layer 120 a functions as the organic layer 120 of the light emitting unit 140.
　なお、図５に示すように、有機層１２０ａは、隔壁１６０とは接していない。この場合、有機層１２０ａを劣化させる物質が隔壁１６０から有機層１２０ａに伝搬することを抑制することができる。詳細には、隔壁１６０は、有機層１２０ａを劣化させる物質（例えば、水）を含んでいることがある。この場合、有機層１２０ａが隔壁１６０と接していると、この物質が有機層１２０ａから隔壁１６０に伝搬することがある。これに対して図５及び図７に示す例では、隔壁１６０が上記した物質を含んでいたとしても、この物質が有機層１２０ａに伝搬することを抑制することができる。 Note that as shown in FIG. 5, the organic layer 120 a is not in contact with the partition wall 160. In this case, a substance that degrades the organic layer 120a can be prevented from propagating from the partition wall 160 to the organic layer 120a. In detail, the partition 160 may contain a substance (for example, water) that degrades the organic layer 120a. In this case, if the organic layer 120 a is in contact with the partition wall 160, this material may propagate from the organic layer 120 a to the partition wall 160. On the other hand, in the example shown in FIGS. 5 and 7, even if the partition 160 includes the above-described substance, it is possible to suppress the propagation of the substance to the organic layer 120a.
　図５及び図８に示すように、隔壁１６０の上面上には、有機層１２０ｂがある。有機層１２０ｂに含まれる材料は、有機層１２０ａに含まれる材料と同一である。有機層１２０ａ及び有機層１２０ｂは、基板１００の第１面１０２上及び隔壁１６０上に有機層を堆積することにより形成される。この場合、有機層は、隔壁１６０によって有機層１２０ａと有機層１２０ｂに分離される。 As shown in FIGS. 5 and 8, the organic layer 120 b is on the upper surface of the partition wall 160. The material included in the organic layer 120b is the same as the material included in the organic layer 120a. The organic layer 120 a and the organic layer 120 b are formed by depositing an organic layer on the first surface 102 of the substrate 100 and the partition 160. In this case, the organic layer is separated into the organic layer 120 a and the organic layer 120 b by the partition wall 160.
　有機層１２０ａは、例えば正孔注入層、正孔輸送層、発光層、電子輸送層及び電子注入層を有している。有機層１２０ａ全体の厚さは、例えば５０ｎｍ以上２００ｎｍ以下である。正孔注入層内及び正孔輸送層内では、正孔が移動する。正孔注入層の厚さは、例えば５０ｎｍ以上１００ｎｍ以下である。正孔輸送層の厚さは、正孔注入層の厚さよりも薄い。正孔輸送層の厚さは、例えば２０ｎｍ以上５０ｎｍ以下である。発光層では、電子と正孔が再結合する。これにより、発光層からは、光が発せられる。発光層からの光の色は、例えば赤、緑又は青である。電子輸送層では、電子が輸送される。電子輸送層の厚さは、例えば５ｎｍ以上１００ｎｍ以下である。電子注入層は、アルカリ金属化合物（例えばＬｉＦ）、金属酸化物（例えば酸化アルミニウム）又は金属錯体（例えばリチウム８－ヒドロキシキノレート（Ｌｉｑ））からなる。電子注入層の厚さは、例えば０．１ｎｍ以上１０ｎｍ以下である。 The organic layer 120a has, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer. The total thickness of the organic layer 120a is, for example, not less than 50 nm and not more than 200 nm. Holes move in the hole injection layer and the hole transport layer. The thickness of the hole injection layer is, for example, not less than 50 nm and not more than 100 nm. The thickness of the hole transport layer is thinner than the thickness of the hole injection layer. The thickness of the hole transport layer is, for example, 20 nm or more and 50 nm or less. In the light emitting layer, electrons and holes are recombined. Thereby, light is emitted from the light emitting layer. The color of light from the light emitting layer is, for example, red, green, or blue. In the electron transport layer, electrons are transported. The thickness of the electron transport layer is, for example, 5 nm or more and 100 nm or less. The electron injection layer is made of an alkali metal compound (for example, LiF), a metal oxide (for example, aluminum oxide) or a metal complex (for example, lithium 8-hydroxyquinolate (Liq)). The thickness of the electron injection layer is, for example, not less than 0.1 nm and not more than 10 nm.
　なお、正孔注入層及び正孔輸送層の一方はなくてもよい。電子輸送層及び電子注入層の一方はなくてもよい。 One of the hole injection layer and the hole transport layer may be omitted. One of the electron transport layer and the electron injection layer may be omitted.
　正孔注入層、正孔輸送層、発光層、電子輸送層及び電子注入層は、例えば塗布プロセスにより形成される。具体的には、例えば正孔注入層、正孔輸送層及び発光層は、塗布プロセスにより形成され。電子輸送層及び電子注入層は、蒸着により形成される。 The hole injection layer, hole transport layer, light emitting layer, electron transport layer, and electron injection layer are formed by, for example, a coating process. Specifically, for example, the hole injection layer, the hole transport layer, and the light emitting layer are formed by a coating process. The electron transport layer and the electron injection layer are formed by vapor deposition.
　図５～図６に示すように、第２導電層１３０ａは、有機層１２０ａ上にある。図２に示すように、複数の第２導電層１３０ａが第２方向（図中、Ｙ方向）に並んでいる。各第２導電層１３０ａは、第１方向（図中、Ｘ方向）に延伸している。互いに隣接する第２導電層１３０ａは、隔壁１６０を挟んで互いに対向している。図５及び図６に示すように、第２導電層１３０ａの一部は、第１導電層１１０ａの一部（第１電極１１０）と重なっている。第２導電層１３０ａのこの一部は、発光部１４０の第２電極１３０として機能する。 As shown in FIGS. 5 to 6, the second conductive layer 130a is on the organic layer 120a. As shown in FIG. 2, a plurality of second conductive layers 130a are arranged in the second direction (Y direction in the figure). Each second conductive layer 130a extends in the first direction (X direction in the figure). The second conductive layers 130a adjacent to each other are opposed to each other with the partition wall 160 interposed therebetween. As shown in FIGS. 5 and 6, a part of the second conductive layer 130a overlaps a part of the first conductive layer 110a (first electrode 110). This part of the second conductive layer 130 a functions as the second electrode 130 of the light emitting unit 140.
　図５、図７及び図８に示すように、隔壁１６０の上面上には、導電層１３０ｂがある。導電層１３０ｂに含まれる材料は、第２導電層１３０ａに含まれる材料と同一である。第２導電層１３０ａ及び導電層１３０ｂは、基板１００の第１面１０２上及び隔壁１６０上に導電層を堆積することにより形成される。この場合、導電層は、隔壁１６０によって第２導電層１３０ａと導電層１３０ｂに分離される。 As shown in FIGS. 5, 7, and 8, the conductive layer 130 b is provided on the upper surface of the partition wall 160. The material included in the conductive layer 130b is the same as the material included in the second conductive layer 130a. The second conductive layer 130 a and the conductive layer 130 b are formed by depositing a conductive layer on the first surface 102 and the partition 160 of the substrate 100. In this case, the conductive layer is separated into the second conductive layer 130 a and the conductive layer 130 b by the partition 160.
　発光装置１０がボトムエミッションである場合、第１導電層１１０ａは、透光性を有する導電層である。この場合、第２導電層１３０ａは、透光性を有する必要はない。これに対して、発光装置１０がトップエミッションである場合、第２導電層１３０ａは、透光性を有する導電層である。この場合、第１導電層１１０ａは、透光性を有する必要はない。 When the light emitting device 10 is bottom emission, the first conductive layer 110a is a conductive layer having translucency. In this case, the second conductive layer 130a does not need to have translucency. On the other hand, when the light emitting device 10 is top emission, the second conductive layer 130a is a light-transmitting conductive layer. In this case, the first conductive layer 110a does not need to have translucency.
　第１導電層１１０ａ及び第２導電層１３０ａが透光性を有する導電層である場合、第１導電層１１０ａ及び第２導電層１３０ａは、例えば金属酸化物を含み、より具体的には、例えばＩＴＯ（Ｉｎｄｉｕｍ　Ｔｉｎ　Ｏｘｉｄｅ）、ＩＺＯ（Ｉｎｄｉｕｍ　Ｚｉｎｃ　Ｏｘｉｄｅ）、ＩＷＺＯ（Ｉｎｄｉｕｍ　Ｔｕｎｇｓｔｅｎ　Ｚｉｎｃ　Ｏｘｉｄｅ）又はＺｎＯ（Ｚｉｎｃ　Ｏｘｉｄｅ）を含んでいる。 In the case where the first conductive layer 110a and the second conductive layer 130a are light-transmitting conductive layers, the first conductive layer 110a and the second conductive layer 130a include, for example, a metal oxide, and more specifically, for example, It contains ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IWZO (Indium Tungsten Zinc Oxide) or ZnO (Zinc Oxide).
　第１導電層１１０ａ及び第２導電層１３０ａが透光性を有しない導電層である場合、第１導電層１１０ａ及び第２導電層１３０ａは、例えばＡｌ、Ａｕ、Ａｇ、Ｐｔ、Ｍｇ、Ｓｎ、Ｚｎ及びＩｎからなる第１群の中から選択される金属又はこの第１群から選択される金属の合金を含んでいる。 In the case where the first conductive layer 110a and the second conductive layer 130a are conductive layers that do not have translucency, the first conductive layer 110a and the second conductive layer 130a include, for example, Al, Au, Ag, Pt, Mg, Sn, A metal selected from the first group consisting of Zn and In or an alloy of a metal selected from the first group is included.
　図５～図８に示すように、被覆層２００は、絶縁層１５０、複数の発光部１４０及び複数の隔壁１６０を覆っている。これにより、被覆層２００は、絶縁層１５０、複数の発光部１４０及び複数の隔壁１６０を封止している。より具体的には、本図に示す例では、被覆層２００は、ＡＬＤ（Ａｔｏｍｉｃ　Ｌａｙｅｒ　Ｄｅｐｏｓｉｔｉｏｎ）によって形成されている。これにより、被覆層２００は、絶縁層１５０、発光部１４０並びに隔壁１６０の側面及び上面を連続して覆っている。被覆層２００は、例えば絶縁材料、より具体的には例えば金属酸化物を含んでいる。被覆層２００は、例えば酸化チタン層及び酸化アルミニウム層を含んでいる。この場合、酸化アルミニウム層は、酸化チタン層上又は酸化チタン層下にある。被覆層２００の厚さは、例えば５０ｎｍ以上３００ｎｍ以下である。 As shown in FIGS. 5 to 8, the covering layer 200 covers the insulating layer 150, the plurality of light emitting portions 140, and the plurality of partition walls 160. Thereby, the coating layer 200 seals the insulating layer 150, the plurality of light emitting units 140, and the plurality of partition walls 160. More specifically, in the example shown in the figure, the covering layer 200 is formed by ALD (Atomic Layer Deposition). Accordingly, the covering layer 200 continuously covers the side surfaces and the upper surface of the insulating layer 150, the light emitting unit 140, and the partition wall 160. The covering layer 200 includes, for example, an insulating material, more specifically, for example, a metal oxide. The covering layer 200 includes, for example, a titanium oxide layer and an aluminum oxide layer. In this case, the aluminum oxide layer is on the titanium oxide layer or below the titanium oxide layer. The thickness of the coating layer 200 is, for example, not less than 50 nm and not more than 300 nm.
　なお、被覆層２００は、例えばＣＶＤ（Ｃｈｅｍｉｃａｌ　Ｖａｐｏｒ　Ｄｅｐｏｓｉｔｉｏｎ）又はスパッタにより形成してもよい。この場合、被覆層２００は、例えばＳｉＯ２層又はＳｉＮ層を含んでいる。この場合、被覆層２００の膜厚は、例えば１０ｎｍ以上１０００ｎｍ以下である。 The covering layer 200 may be formed by, for example, CVD (Chemical Vapor Deposition) or sputtering. In this case, the covering layer 200 includes, for example, a SiO 2 layer or a SiN layer. In this case, the film thickness of the coating layer 200 is, for example, not less than 10 nm and not more than 1000 nm.
　被覆層２００は、樹脂層により覆われていてもよい。樹脂層は、被覆層２００を保護するために設けられている。樹脂層は、例えばエポキシ樹脂又はアクリル樹脂を含んでいる。 The covering layer 200 may be covered with a resin layer. The resin layer is provided to protect the covering layer 200. The resin layer contains, for example, an epoxy resin or an acrylic resin.
　次に、複数の発光部１４０のレイアウトについて説明する。図２に示すように、各発光部１４０は、第１方向に並ぶ複数の第１導電層１１０ａと第２方向に並ぶ複数の第２導電層１３０ａの交点上に位置している。これにより、複数の発光部１４０は、第２方向（図中、Ｙ方向）に並ぶｍ個の行及び第１方向（図中、Ｘ方向）に並ぶｎ個の列を含むｍ×ｎの行列状（本図に示す例では、ｍ＝４、ｎ＝５）に並んでいる。 Next, the layout of the plurality of light emitting units 140 will be described. As shown in FIG. 2, each light emitting unit 140 is located on an intersection of a plurality of first conductive layers 110 a arranged in the first direction and a plurality of second conductive layers 130 a arranged in the second direction. Accordingly, the plurality of light emitting units 140 includes an m × n matrix including m rows arranged in the second direction (Y direction in the drawing) and n columns arranged in the first direction (X direction in the drawing). (In the example shown in the figure, m = 4, n = 5).
　図９に示すように、発光部１４０の平面形状は、矩形であり、第１辺１４２、第２辺１４４、第３辺１４６及び第４辺１４８を有している。第２辺１４４は、第１辺１４２の反対側にある。第３辺１４６と第４辺１４８は、第１辺１４２と第２辺１４４の間にある。第４辺１４８は、第３辺１４６の反対側にある。 As shown in FIG. 9, the planar shape of the light emitting unit 140 is a rectangle, and has a first side 142, a second side 144, a third side 146, and a fourth side 148. The second side 144 is on the opposite side of the first side 142. The third side 146 and the fourth side 148 are between the first side 142 and the second side 144. The fourth side 148 is on the opposite side of the third side 146.
　図５及び図９示すように、発光部１４０の第１辺１４２及び第２辺１４４は、絶縁層１５０の開口１５２によって画定され、図６及び図９示すように、発光部１４０の第３辺１４６及び第４辺１４８は、第１導電層１１０ａ（第１電極１１０）によって画定されている。詳細には、図９に示すように、絶縁層１５０の第１縁１５２ａは、第１電極１１０（第１導電層１１０ａ）と交差する部分を含み、絶縁層１５０の第２縁１５２ｂは、第１電極１１０（第１導電層１１０ａ）と交差する部分を含む。第１辺１４２は、第１縁１５２ａの上記した部分によって画定されている。第２辺１４４は、第２縁１５２ｂの上記した部分によって画定されている。図９に示すように、第１導電層１１０ａは、縁１１６（端）及び縁１１８（端）を有している。縁１１６及び縁１１８は、第２方向（図中、Ｙ方向）に延伸している。縁１１６は、開口１５２と交差する部分を含み、縁１１８は、開口１５２と交差する部分を含む。第３辺１４６は、縁１１６の上記した部分によって画定されている。第４辺１４８は、縁１１８の上記した部分によって画定されている。 As shown in FIGS. 5 and 9, the first side 142 and the second side 144 of the light emitting unit 140 are defined by the opening 152 of the insulating layer 150, and the third side of the light emitting unit 140 is shown in FIGS. 6 and 9. 146 and the fourth side 148 are defined by the first conductive layer 110a (first electrode 110). Specifically, as shown in FIG. 9, the first edge 152a of the insulating layer 150 includes a portion intersecting the first electrode 110 (first conductive layer 110a), and the second edge 152b of the insulating layer 150 is A portion intersecting with one electrode 110 (first conductive layer 110a) is included. The first side 142 is defined by the aforementioned portion of the first edge 152a. The second side 144 is defined by the above-described portion of the second edge 152b. As shown in FIG. 9, the first conductive layer 110a has an edge 116 (end) and an edge 118 (end). The edge 116 and the edge 118 extend in the second direction (Y direction in the figure). The edge 116 includes a portion that intersects the opening 152, and the edge 118 includes a portion that intersects the opening 152. Third side 146 is defined by the aforementioned portion of edge 116. The fourth side 148 is defined by the aforementioned portion of the edge 118.
　図３に示す例では、開口１５２の第１縁１５２ａ及び第２縁１５２ｂは、第１列から第ｎ列（本図に示す例では、ｎ＝５）までのすべての第１導電層１１０ａと交差している。このため、基板１００の第１面１０２上のどの領域においても、第１方向（図中、Ｘ方向）に互いに隣接する発光部１４０の間には、絶縁層１５０が位置していない。このため、発光部１４０を劣化させる物質が、第１方向（図中、Ｘ方向）に互いに隣接する発光部１４０の間で絶縁層１５０を介して伝搬することを抑制することができる。 In the example shown in FIG. 3, the first edge 152a and the second edge 152b of the opening 152 are all the first conductive layers 110a from the first row to the n-th row (n = 5 in the example shown in this figure). Crossed. Therefore, in any region on the first surface 102 of the substrate 100, the insulating layer 150 is not located between the light emitting units 140 adjacent to each other in the first direction (X direction in the drawing). For this reason, it can suppress that the substance which degrades the light emission part 140 propagates through the insulating layer 150 between the light emission parts 140 mutually adjacent in a 1st direction (X direction in a figure).
　次に、発光装置１０の製造方法について説明する。まず、基板１００の第１面１０２上に導電層を形成し、この導電層をパターニングする。これにより、複数の導電層１７０（第１導電層１１０ａ、第１配線１１４及び第２配線１３４）が形成される。次いで、各導電層１７０の上面上に導電層１８０を形成する。 Next, a method for manufacturing the light emitting device 10 will be described. First, a conductive layer is formed on the first surface 102 of the substrate 100, and this conductive layer is patterned. Thus, a plurality of conductive layers 170 (first conductive layer 110a, first wiring 114, and second wiring 134) are formed. Next, a conductive layer 180 is formed on the upper surface of each conductive layer 170.
　次いで、基板１００の第１面１０２上及び複数の導電層１７０上に絶縁層１５０を形成する。次いで、絶縁層１５０に複数の開口１５２及び複数の開口１５４を形成する。 Next, the insulating layer 150 is formed on the first surface 102 of the substrate 100 and the plurality of conductive layers 170. Next, a plurality of openings 152 and a plurality of openings 154 are formed in the insulating layer 150.
　次いで、絶縁層１５０上に複数の隔壁１６０を形成する。 Next, a plurality of partition walls 160 are formed on the insulating layer 150.
　次いで、絶縁層１５０上及び複数の隔壁１６０上に有機層を形成する。これにより、有機層は、隔壁１６０によって有機層１２０ａ及び有機層１２０ｂに分離される。 Next, an organic layer is formed on the insulating layer 150 and the plurality of partition walls 160. Accordingly, the organic layer is separated into the organic layer 120a and the organic layer 120b by the partition 160.
　次いで、絶縁層１５０上及び複数の隔壁１６０上に導電層を形成する。これにより、導電層は、隔壁１６０によって第２導電層１３０ａ及び導電層１３０ｂに分離される。 Next, a conductive layer is formed over the insulating layer 150 and the plurality of partition walls 160. Accordingly, the conductive layer is separated into the second conductive layer 130a and the conductive layer 130b by the partition 160.
　次いで、基板１００の第１面１０２上、絶縁層１５０上及び複数の隔壁１６０上に被覆層２００をＡＬＤにより形成する。これにより、絶縁層１５０、複数の発光部１４０及び複数の隔壁１６０は、被覆層２００によって封止される。 Next, the coating layer 200 is formed by ALD on the first surface 102 of the substrate 100, the insulating layer 150, and the plurality of partition walls 160. As a result, the insulating layer 150, the plurality of light emitting units 140, and the plurality of partition walls 160 are sealed by the covering layer 200.
　以上、本実施形態によれば、発光部１４０の発光領域が狭くなることを抑制することができる。詳細には、本発明者が検討したところ、発光部１４０を劣化させる物質が絶縁層１５０を伝搬する可能性があることが明らかとなった。本実施形態では、第１方向（図中、Ｘ方向）に並ぶ複数の発光部１４０の間に絶縁層１５０が位置しない。このため、絶縁層１５０を伝搬する発光部１４０を劣化させる物質が有機層１２０を介して開口１５２内の複数の発光部１４０の第３辺１４６及び第４辺１４８へ伝搬することを抑制することができる。このため、本実施形態では、発光部１４０の発光領域が狭くなることを抑制することができる。 As mentioned above, according to this embodiment, it can suppress that the light emission area | region of the light emission part 140 becomes narrow. Specifically, as a result of examination by the present inventor, it has been found that a substance that degrades the light emitting unit 140 may propagate through the insulating layer 150. In the present embodiment, the insulating layer 150 is not positioned between the light emitting units 140 arranged in the first direction (X direction in the drawing). For this reason, it is suppressed that the substance which degrades the light emission part 140 which propagates the insulating layer 150 propagates to the 3rd edge | side 146 and the 4th edge | side 148 of the some light emission part 140 in the opening 152 through the organic layer 120. Can do. For this reason, in this embodiment, it can suppress that the light emission area | region of the light emission part 140 becomes narrow.
　なお、本発明者が検討したところ、発光部１４０を劣化させる上記した物質は、行列状に配置された複数の発光部１４０を含む領域の外側において、例えば紫外線に起因して発生している可能性があることが明らかとなった。本発明者がさらに検討したところ、上記した物質は、絶縁層１５０が感光性樹脂（例えばポリイミド）を含んでいる場合、絶縁層１５０内で広く伝搬する傾向があることが明らかとなった。これは、感光性樹脂が、上記した物質を伝搬させるように機能しているためであると推定される。本発明者がさらに検討したところ、上記した物質は、被覆層２００がＡＬＤにより形成されている場合、絶縁層１５０内で広く伝搬する傾向があることが明らかとなった。これは、被覆層２００がＡＬＤにより形成されている場合、絶縁層１５０の表面が高い気密性で封止されるためであると推定される。この場合、上記した物質が絶縁層１５０の外側に排出されることが阻害される。本実施形態においては、絶縁層１５０がポリイミドを含み、かつ被覆層２００がＡＬＤにより形成されていても、上記した物質が絶縁層１５０内を介し、発光部１４０へ伝搬することを抑制することができる。 As a result of examination by the present inventor, the above-described substances that degrade the light emitting unit 140 may be generated outside the region including the plurality of light emitting units 140 arranged in a matrix, for example, due to ultraviolet rays. It became clear that there was sex. Further examination by the present inventors has revealed that the above-described substances tend to propagate widely in the insulating layer 150 when the insulating layer 150 contains a photosensitive resin (eg, polyimide). This is presumed to be because the photosensitive resin functions to propagate the above-described substances. Further examination by the present inventor has revealed that the above-described substances tend to propagate widely in the insulating layer 150 when the coating layer 200 is formed by ALD. This is presumably because the surface of the insulating layer 150 is sealed with high airtightness when the coating layer 200 is formed by ALD. In this case, the above substances are prevented from being discharged to the outside of the insulating layer 150. In the present embodiment, even when the insulating layer 150 includes polyimide and the covering layer 200 is formed by ALD, the above-described substances are prevented from propagating to the light emitting unit 140 through the insulating layer 150. it can.
　図１０は、図９の変形例を示す図である。本図に示すように、互いに隣接する２つの発光部１４０の間では、一方の発光部１４０の第３辺１４６及び他方の発光部１４０の第４辺１４８が露出するように絶縁層１５０が形成されていてもよい。この場合、互いに隣接する発光部１４０の間における絶縁層１５０の幅は狭いものとなる。即ち、一方の発光部１４０の第３辺１４６及び他方の発光部１４０の第４辺１４８から離間されるように発光部１４０の間における絶縁層１５０は形成されている。このため、発光部１４０を劣化させる物質が、互いに隣接する発光部１４０の間の絶縁層１５０を介して発光部１４０へ伝搬することを抑制することができる。 FIG. 10 is a diagram showing a modification of FIG. As shown in this figure, an insulating layer 150 is formed between two light emitting units 140 adjacent to each other so that the third side 146 of one light emitting unit 140 and the fourth side 148 of the other light emitting unit 140 are exposed. May be. In this case, the width of the insulating layer 150 between the light emitting units 140 adjacent to each other is narrow. That is, the insulating layer 150 is formed between the light emitting units 140 so as to be separated from the third side 146 of one light emitting unit 140 and the fourth side 148 of the other light emitting unit 140. For this reason, it can suppress that the substance which degrades the light emission part 140 propagates to the light emission part 140 through the insulating layer 150 between the light emission parts 140 adjacent to each other.
　図１１は、図３の第１の変形例を示す図である。本図に示すように、絶縁層１５０の開口１５２は、絶縁層１５０の外側の領域に繋がっていてもよい。本変形例においても、実施形態と同様にして、発光部１４０を劣化させる物質が絶縁層１５０を介して発光部１４０へ伝搬することが抑制される。 FIG. 11 is a diagram showing a first modification of FIG. As shown in this figure, the opening 152 of the insulating layer 150 may be connected to a region outside the insulating layer 150. Also in this modified example, similarly to the embodiment, a substance that degrades the light emitting unit 140 is suppressed from propagating to the light emitting unit 140 through the insulating layer 150.
　図１２は、図３の第２の変形例を示す図である。本図に示す例では、複数の開口１５２が第１方向（図中、Ｘ方向）に並んでいる。各開口１５２内では、複数の発光部１４０が第１方向（図中、Ｘ方向）に並んでいる。言い換えると、本図に示す例では、図３に示した開口１５２が第１方向（図中、Ｘ方向）に沿って複数の開口１５２に分離している。本図に示す例においても、各開口１５２内では、発光部１４０を劣化させる物質が、互いに隣接する発光部１４０の間で絶縁層１５０を介して伝搬することを抑制することができる。 FIG. 12 is a diagram showing a second modification of FIG. In the example shown in the figure, the plurality of openings 152 are arranged in the first direction (X direction in the figure). Within each opening 152, a plurality of light emitting portions 140 are arranged in the first direction (X direction in the figure). In other words, in the example shown in this drawing, the opening 152 shown in FIG. 3 is separated into a plurality of openings 152 along the first direction (X direction in the drawing). Also in the example shown in this figure, in each opening 152, it is possible to suppress a substance that deteriorates the light emitting unit 140 from propagating through the insulating layer 150 between the light emitting units 140 adjacent to each other.
　図１３は、実施例１に係る発光装置１０を示す平面図である。本実施例に係る発光装置１０は、以下の点を除いて、実施形態に係る発光装置１０と同様である。 FIG. 13 is a plan view showing the light emitting device 10 according to the first embodiment. The light emitting device 10 according to this example is the same as the light emitting device 10 according to the embodiment except for the following points.
　発光装置１０は、第１電位供給部１９２及び第２電位供給部１９４を有している。第１電位供給部１９２は、第１電位を与える。第２電位供給部１９４は、第２電位を与える。第１電位及び第２電位は、例えばそれぞれ、電源電位及び接地電位であり、又は接地電位及び電源電位である。 The light emitting device 10 includes a first potential supply unit 192 and a second potential supply unit 194. The first potential supply unit 192 provides a first potential. The second potential supply unit 194 provides a second potential. The first potential and the second potential are, for example, a power supply potential and a ground potential, respectively, or a ground potential and a power supply potential.
　複数の第１導電層１１０ａのうちの一部の第１導電層１１０ａ（第３の第１導電層）は、第１配線１１４を介して第１電位供給部１９２に電気的に接続している。これに対して、複数の第１導電層１１０ａのうちの他の一部の第１導電層１１０ａ（第１の第１導電層及び第２の第１導電層）は、第１電位供給部１９２に電気的に接続しておらず、電気的に浮遊している。本図に示す例では、複数の第１導電層１１０ａの一端の第１導電層１１０ａ（第１の第１導電層）及び複数の第１導電層１１０ａのもう一端の第１導電層１１０ａ（第２の第１導電層）が電気的に浮遊している。これに対して、上記した一端の第１導電層１１０ａと上記したもう一端の第１導電層１１０ａの間の複数の第１導電層１１０ａ（第１の第１導電層）が第１電位供給部１９２に電気的に接続している。 A part of the first conductive layer 110a (third first conductive layer) among the plurality of first conductive layers 110a is electrically connected to the first potential supply unit 192 through the first wiring 114. . On the other hand, some other first conductive layers 110a (the first first conductive layer and the second first conductive layer) of the plurality of first conductive layers 110a are connected to the first potential supply unit 192. It is not electrically connected to and is electrically floating. In the example shown in this figure, the first conductive layer 110a (first first conductive layer) at one end of the plurality of first conductive layers 110a and the first conductive layer 110a (first step) at the other end of the plurality of first conductive layers 110a. 2 first conductive layer) is electrically floating. On the other hand, a plurality of first conductive layers 110a (first first conductive layers) between the first conductive layer 110a at one end and the first conductive layer 110a at the other end are the first potential supply unit. 192 is electrically connected.
　複数の第２導電層１３０ａのうちの一部の第２導電層１３０ａ（第３の第２導電層）は、第２配線１３４を介して第２電位供給部１９４に電気的に接続している。これに対して、複数の第２導電層１３０ａのうちの他の一部の第２導電層１３０ａ（第１の第２導電層及び第２の第２導電層）は、第２電位供給部１９４に電気的に接続しておらず、電気的に浮遊している。本図に示す例では、複数の第２導電層１３０ａの一端の第２導電層１３０ａ（第１の第２導電層）及び複数の第２導電層１３０ａのもう一端の第２導電層１３０ａ（第２の第２導電層）が電気的に浮遊している。これに対して、上記した一端の第２導電層１３０ａと上記したもう一端の第２導電層１３０ａの間の複数の第２導電層１３０ａ（第１の第２導電層）が第２電位供給部１９４に電気的に接続している。 A part of the second conductive layer 130a (third second conductive layer) among the plurality of second conductive layers 130a is electrically connected to the second potential supply unit 194 through the second wiring 134. . On the other hand, the other second conductive layer 130a (the first second conductive layer and the second second conductive layer) of the plurality of second conductive layers 130a is connected to the second potential supply unit 194. It is not electrically connected to and is electrically floating. In the example shown in this figure, the second conductive layer 130a (first second conductive layer) at one end of the plurality of second conductive layers 130a and the second conductive layer 130a (first step) at the other end of the plurality of second conductive layers 130a. 2nd conductive layer) is electrically floating. On the other hand, a plurality of second conductive layers 130a (first second conductive layers) between the second conductive layer 130a at one end and the second conductive layer 130a at the other end described above are the second potential supply unit. 194 is electrically connected.
　本図に示すように、基板１００の第１面１０２は、領域１０２ａ及び領域１０２ｂを含んでいる。領域１０２ｂは、領域１０２ａを囲んでいる。領域１０２ｂ上には、複数の第１導電層１１０ａの一端の第１導電層１１０ａ、複数の第１導電層１１０ａのもう一端の第１導電層１１０ａ、複数の第２導電層１３０ａの一端の第２導電層１３０ａ及び複数の第２導電層１３０ａの一端の第２導電層１３０ａのいずれかに電気的に接続する発光部１４０が位置している。領域１０２ｂ内の発光部１４０には、有機層１２０を発光させるための電位が与えられていない。言い換えると、領域１０２ｂ内の発光部１４０は、ダミー発光部として機能している。これに対して、領域１０２ａ内の発光部１４０には、有機層１２０を発光させるための電位が与えられている。言い換えると、領域１０２ａ内の発光部１４０（第１発光部）は、第１導電層１１０ａ（第３の第１導電層）の第１電極１１０及び第２導電層１３０ａ（第３の第２導電層）の第２電極１３０を有している。 As shown in the figure, the first surface 102 of the substrate 100 includes a region 102a and a region 102b. The region 102b surrounds the region 102a. Over the region 102b, the first conductive layer 110a at one end of the plurality of first conductive layers 110a, the first conductive layer 110a at the other end of the plurality of first conductive layers 110a, and the first conductive layer 110a at one end of the plurality of second conductive layers 130a. The light emitting unit 140 that is electrically connected to one of the second conductive layer 130a and the second conductive layer 130a at one end of the plurality of second conductive layers 130a is located. A potential for causing the organic layer 120 to emit light is not applied to the light emitting unit 140 in the region 102b. In other words, the light emitting unit 140 in the region 102b functions as a dummy light emitting unit. In contrast, a potential for causing the organic layer 120 to emit light is applied to the light emitting unit 140 in the region 102a. In other words, the light-emitting portion 140 (first light-emitting portion) in the region 102a includes the first electrode 110 and the second conductive layer 130a (third second conductive layer) of the first conductive layer 110a (third first conductive layer). Layer) of the second electrode 130.
　なお、本発明者が検討したところ、行列状に配置された複数の発光部１４０のうち外側に位置する発光部１４０の劣化が顕著であることが明らかになった。即ち、行列状に配置された複数の発光部１４０のうち外側に位置する発光部１４０と、それ以外の発光部１４０とにおいて劣化の進行に差があることが明らかになった。領域１０２ｂに位置する発光部１４０を囲む絶縁層１５０の体積は、領域１０２ａに位置する発光部１４０を囲む絶縁層１５０の体積よりも大きいため、発光部１４０を劣化させる物質を多く含むためだと推測される。 Note that, as a result of examination by the present inventor, it has been clarified that the deterioration of the light emitting units 140 located on the outer side among the plurality of light emitting units 140 arranged in a matrix is significant. That is, it became clear that there is a difference in the progress of deterioration between the light emitting units 140 located outside of the plurality of light emitting units 140 arranged in a matrix and the other light emitting units 140. The volume of the insulating layer 150 surrounding the light emitting portion 140 located in the region 102b is larger than the volume of the insulating layer 150 surrounding the light emitting portion 140 located in the region 102a, and thus contains a large amount of a substance that degrades the light emitting portion 140. Guessed.
　本図に示す例においては、行列状に配置された複数の発光部１４０のうち外側に位置する発光部１４０はダミーとなっている。そのため領域１０２ａ内の発光部１４０のうち外側に位置する発光部１４０とそれ以外の発光部１４０との劣化の進行の差を抑制することができる。これは、領域１０２ａ内の発光部１４０は領域１０２ｂの発光部１４０（ダミー発光部）によって、領域１０２ｂ外に位置する絶縁層１５０から離間されているためである。 In the example shown in the figure, the light emitting unit 140 located outside of the plurality of light emitting units 140 arranged in a matrix is a dummy. Therefore, it is possible to suppress a difference in the progress of deterioration between the light emitting units 140 located outside of the light emitting units 140 in the region 102a and the other light emitting units 140. This is because the light emitting portion 140 in the region 102a is separated from the insulating layer 150 located outside the region 102b by the light emitting portion 140 (dummy light emitting portion) in the region 102b.
　以上、図面を参照して実施形態及び実施例について述べたが、これらは本発明の例示であり、上記以外の様々な構成を採用することもできる。 As mentioned above, although embodiment and the Example were described with reference to drawings, these are the illustrations of this invention, Various structures other than the above are also employable.

Claims (11)

  1. 　基板と、
    　前記基板上の絶縁層と、
    　前記基板上で前記絶縁層から露出し、各々が第１電極、第２電極及び前記第１電極と前記第２電極の間の有機層を有する複数の発光部と、
    を備え、
    　前記発光部は、前記絶縁層によって画定された第１辺、前記第１辺とは反対側にあって前記絶縁層によって画定された第２辺及び前記第１辺と前記第２辺に交差する方向に延伸して前記絶縁層から露出した第３辺を有する発光装置。     A substrate,
    An insulating layer on the substrate;
    A plurality of light emitting portions exposed from the insulating layer on the substrate, each having a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode;
    With
    The light emitting unit intersects the first side defined by the insulating layer, the second side defined by the insulating layer on the side opposite to the first side, and the first side and the second side. A light emitting device having a third side extending in a direction and exposed from the insulating layer.
  2. 　請求項１に記載の発光装置において、
    　前記発光部は、前記第３辺とは反対側にあって前記絶縁層から露出した第４辺を有する発光装置。     The light-emitting device according to claim 1.
    The light emitting unit is a light emitting device having a fourth side exposed on the side opposite to the third side and exposed from the insulating layer.
  3. 　請求項１又は２に記載の発光装置において、
    　隣接する前記発光部の間に位置する領域は前記絶縁層から露出している発光装置。     The light-emitting device according to claim 1 or 2,
    A light emitting device in which a region located between adjacent light emitting units is exposed from the insulating layer.
  4. 　請求項３に記載の発光装置において、
    　前記絶縁層は、第１縁を有する第１領域及び前記第１縁に対向する第２縁を有する第２領域を含み、
    　前記第１辺は、前記第１縁によって画定され、
    　前記第２辺は、前記第２縁によって画定されている発光装置。     The light emitting device according to claim 3.
    The insulating layer includes a first region having a first edge and a second region having a second edge opposite to the first edge;
    The first side is defined by the first edge;
    The light emitting device, wherein the second side is defined by the second edge.
  5. 　請求項４に記載の発光装置において、
    　前記絶縁層は、前記発光部を露出する開口を有し、
    　前記開口は、第３縁及び前記第３縁に対向する第４縁を有し、
    　前記絶縁層の前記第１縁は、前記開口の前記第３縁であり、
    　前記絶縁層の前記第２縁は、前記開口の前記第４縁である発光装置。     The light-emitting device according to claim 4.
    The insulating layer has an opening exposing the light emitting part,
    The opening has a third edge and a fourth edge opposite the third edge;
    The first edge of the insulating layer is the third edge of the opening;
    The light emitting device, wherein the second edge of the insulating layer is the fourth edge of the opening.
  6. 　請求項１～５のいずれか一項に記載の発光装置において、
    　第１方向に並ぶ複数の第１導電層と、
    　前記基板上及び前記複数の第１導電層上において、前記第１方向に直交する第２方向に並ぶ複数の第２導電層と、
    を備え、
    　前記絶縁層は、前記基板上及び前記複数の第１導電層上にあり、
    　前記絶縁層の第１縁及び第２縁は、前記第１導電層と交差し、
    　前記複数の第２導電層は、前記基板上、前記複数の第１導電層上及び前記絶縁層上にあり、
    　前記第１導電層は、前記第２導電層と重なる部分を含み、
    　前記第２導電層は、前記第１導電層と重なる部分を含み、
    　前記発光部の前記第１電極は、前記第１導電層の前記部分であり、
    　前記発光部の前記第２電極は、前記第２導電層の前記部分である発光装置。     The light emitting device according to any one of claims 1 to 5,
    A plurality of first conductive layers arranged in a first direction;
    A plurality of second conductive layers arranged in a second direction orthogonal to the first direction on the substrate and the plurality of first conductive layers;
    With
    The insulating layer is on the substrate and the plurality of first conductive layers;
    A first edge and a second edge of the insulating layer intersect the first conductive layer;
    The plurality of second conductive layers are on the substrate, on the plurality of first conductive layers, and on the insulating layer,
    The first conductive layer includes a portion overlapping the second conductive layer,
    The second conductive layer includes a portion overlapping the first conductive layer,
    The first electrode of the light emitting portion is the portion of the first conductive layer;
    The light emitting device, wherein the second electrode of the light emitting unit is the portion of the second conductive layer.
  7. 　請求項６に記載の発光装置において、
    　前記第３辺、前記第４辺は前記第１導電層の端によって画定されている発光装置。     The light-emitting device according to claim 6.
    The light emitting device, wherein the third side and the fourth side are defined by an end of the first conductive layer.
  8. 　請求項６又は７に記載の発光装置において、
    　前記絶縁層上の複数の隔壁を備え、
    　前記複数の隔壁は、前記第２方向に並び、
    　互いに隣接する第２導電層は、前記隔壁を挟んで互いに対向している発光装置。     The light-emitting device according to claim 6 or 7,
    A plurality of partition walls on the insulating layer;
    The plurality of partition walls are arranged in the second direction,
    The second conductive layers adjacent to each other are opposed to each other with the partition interposed therebetween.
  9. 　請求項８に記載の発光装置において、
    　前記絶縁層、前記複数の発光部及び前記複数の隔壁を覆う被覆層を備える発光装置。     The light-emitting device according to claim 8.
    A light emitting device comprising a covering layer covering the insulating layer, the plurality of light emitting portions, and the plurality of partition walls.
  10. 　請求項９に記載の発光装置において、
    　前記被覆層は、酸化チタン層及び酸化アルミニウム層を含む発光装置。     The light-emitting device according to claim 9.
    The covering layer is a light emitting device including a titanium oxide layer and an aluminum oxide layer.
  11. 　請求項６～１０のいずれか一項に記載の発光装置において、
    　第１電位を与える第１電位供給部と、
    　第２電位を与える第２電位供給部と、
    を備え、
    　前記複数の第１導電層は、第１の第１導電層、第２の第１導電層及び前記第１の第１導電層と前記第２の第１導電層の間の第３の第１導電層を含み、
    　前記複数の第２導電層は、第１の第２導電層、第２の第２導電層及び前記第１の第２導電層と前記第２の第２導電層の間の第３の第２導電層を含み、
    　前記第３の第１導電層は、前記第１電位供給部に電気的に接続し、
    　前記第１の第１導電層は、電気的に浮遊し、
    　前記第２の第１導電層は、電気的に浮遊し、
    　前記第３の第２導電層は、前記第２電位供給部に電気的に接続し、
    　前記第１の第２導電層は、電気的に浮遊し、
    　前記第２の第２導電層は、電気的に浮遊し、
    　前記複数の発光部のうちの第１発光部は、前記第３の第１導電層の前記第１電極及び前記第３の第２導電層の前記第２電極を有する発光装置。     The light emitting device according to any one of claims 6 to 10,
    A first potential supply section for applying a first potential;
    A second potential supply section for applying a second potential;
    With
    The plurality of first conductive layers include a first first conductive layer, a second first conductive layer, and a third first between the first first conductive layer and the second first conductive layer. Including a conductive layer;
    The plurality of second conductive layers include a first second conductive layer, a second second conductive layer, and a third second layer between the first second conductive layer and the second second conductive layer. Including a conductive layer;
    The third first conductive layer is electrically connected to the first potential supply unit,
    The first first conductive layer is electrically floating;
    The second first conductive layer is electrically floating;
    The third second conductive layer is electrically connected to the second potential supply unit,
    The first second conductive layer is electrically floating;
    The second second conductive layer is electrically floating;
    The first light emitting unit of the plurality of light emitting units includes the first electrode of the third first conductive layer and the second electrode of the third second conductive layer.
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