WO2017150657A1 - Plating apparatus and plating method - Google Patents

Plating apparatus and plating method Download PDF

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Publication number
WO2017150657A1
WO2017150657A1 PCT/JP2017/008256 JP2017008256W WO2017150657A1 WO 2017150657 A1 WO2017150657 A1 WO 2017150657A1 JP 2017008256 W JP2017008256 W JP 2017008256W WO 2017150657 A1 WO2017150657 A1 WO 2017150657A1
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WO
WIPO (PCT)
Prior art keywords
substrate
plating
edge portion
edge
plasma
Prior art date
Application number
PCT/JP2017/008256
Other languages
French (fr)
Japanese (ja)
Inventor
瑞樹 長井
下山　正
貴士 岸
文敏 西浦
Original Assignee
株式会社荏原製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2017029890A external-priority patent/JP6833557B2/en
Application filed by 株式会社荏原製作所 filed Critical 株式会社荏原製作所
Priority to US16/081,687 priority Critical patent/US20210040641A1/en
Priority to KR1020187024345A priority patent/KR102342006B1/en
Priority to CN201780014785.XA priority patent/CN108699722B/en
Publication of WO2017150657A1 publication Critical patent/WO2017150657A1/en

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/08—Rinsing
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

Definitions

  • the present invention relates to a plating apparatus and a plating method.
  • bumps protruding shapes that form wiring in fine wiring grooves, holes, or resist openings provided on the surface of a semiconductor wafer, etc., or are electrically connected to the surface of a semiconductor wafer or the like with package electrodes, etc. Forming an electrode).
  • a method for forming the wiring and bumps for example, an electrolytic plating method, a vapor deposition method, a printing method, a ball bump method and the like are known.
  • Electroplating methods that can be made to be stable and have relatively stable performance have been increasingly used.
  • a resist pattern is previously formed on a substrate such as a semiconductor wafer on which a seed layer is formed. Subsequently, the substrate on which the resist pattern is formed is irradiated with ultraviolet light (hereinafter referred to as UV or Ultra Violet) to remove the resist residue on the substrate surface (ashing treatment) and to make the resist surface hydrophilic (discum) Process).
  • UV or Ultra Violet ultraviolet light
  • the substrate that has been subjected to the ashing process and the discum process is transported to the plating apparatus and held on the substrate holder.
  • the substrate holder has an electrical contact for supplying power to the substrate.
  • the electrical contacts of the substrate holder are configured to contact the seed layer on the edge of the substrate that is not coated with resist when the substrate is held on the substrate holder.
  • Such a substrate holder is disclosed in Patent Document 1, for example.
  • the substrate held by the substrate holder is immersed in a plating solution, and a voltage is applied between the anode and the substrate to form a plating film on the substrate surface.
  • the plating process is not performed immediately after the ashing process and the discum process. That is, the substrate is held by the substrate holder after a predetermined time has elapsed since the ashing process and the discaming process. At this time, an oxide film may be formed on the seed layer on the edge portion of the substrate or an organic substance volatilized from the resist may be attached as time elapses from the ashing process and the discaming process. If an oxide film is formed on the seed layer on the edge of the substrate where the electrical contacts of the substrate come into contact, or if organic substances adhere, the contact resistance of the electrical contacts of the substrate holder will vary, and the plating film thickness There is a problem that uniformity is deteriorated.
  • the present invention has been made in view of the above problems, and one of its purposes is caused by at least one of an oxide film formed on the edge portion of the substrate and an organic substance adhering to the edge portion of the substrate. This is to prevent the deterioration of the uniformity of the plating film thickness.
  • a plating apparatus for plating a substrate.
  • the plating apparatus includes an edge cleaning apparatus that locally removes at least one of an organic substance and an oxide film present on the edge of the substrate, a plating solution, and the substrate and the anode in the plating solution.
  • the contact resistance of the electrical contact of the substrate holder varies due to at least one of the organic substance and the oxide film present on the edge of the substrate without adversely affecting the resist pattern formed on the surface other than the edge of the substrate. And the deterioration of the uniformity of the plating film thickness can be prevented.
  • the said edge part cleaning apparatus contains the organic substance detachment
  • the said organic substance detachment apparatus is the edge of the said board
  • a UV irradiation apparatus that irradiates the part with UV or a plasma emission apparatus that emits plasma to the edge portion of the rotating substrate.
  • a resist is coated on a substrate to be plated. If UV or plasma is radiated to the resist, the resist may be modified and damaged. According to this embodiment, UV or plasma can be locally emitted to the edge portion of the substrate. Thereby, UV or plasma is not emitted to the surface other than the edge portion of the substrate, that is, the portion where the resist is applied on the substrate, so that the edge portion of the substrate is not damaged without damaging the resist on the substrate. The organic matter can be eliminated.
  • the plating apparatus includes an aligner that rotates the substrate to align the orientation of the substrate, and the organic substance detachment device is provided in the aligner.
  • the edge portion of the substrate can be processed by the UV irradiation device or the plasma irradiation device while rotating the substrate by the aligner. Therefore, it is not necessary to provide a mechanism for rotating the substrate in the organic substance detaching apparatus, so that the cost can be reduced. Moreover, the footprint of the whole plating apparatus can also be reduced by providing an organic substance detachment apparatus in the aligner.
  • the UV irradiation device or the plasma radiation device is disposed at a position where UV or plasma can be locally applied to an edge portion of the substrate from above the substrate.
  • the said edge part cleaning apparatus contains the oxide film removal apparatus which removes locally the oxide film which exists in the edge part of the said board
  • the said oxide film removal apparatus is the edge of the said board
  • a chemical solution cleaning device including a chemical solution nozzle for supplying a chemical solution to the unit is included.
  • a seed layer is formed on a substrate to be plated. If the chemical solution is left on the seed layer, the seed layer may be dissolved. For this reason, when the chemical solution adheres to a portion other than the edge of the substrate to be plated, that is, the seed layer exposed from the opening of the resist pattern, sufficient cleaning is required so that the chemical solution does not remain.
  • the chemical solution can be locally supplied to the edge portion of the substrate. Accordingly, the oxide film formed on the edge portion of the substrate can be removed without attaching a chemical solution to the seed layer exposed from the opening of the resist pattern. Therefore, the cleaning time of the substrate can be greatly reduced as compared with the case where the chemical solution is attached to the entire surface of the substrate.
  • the chemical solution contains 3 wt% or more and 15 wt% or less of dilute sulfuric acid or 2 wt% or more and 20 wt% or less of citric acid.
  • the oxide film can be removed without dissolving the seed layer on the edge portion of the substrate. If the dilute sulfuric acid is less than 3 wt% or the citric acid is less than 2 wt%, the acid concentration may be too low to remove the oxide film properly. Further, if the diluted sulfuric acid exceeds 15 wt% or the citric acid exceeds 20 wt%, the acid concentration may be too high and the seed layer on the edge portion of the substrate may be dissolved.
  • the plating apparatus includes a spin rinse dryer configured to rotate and dry the substrate, and the oxide film removing apparatus is provided in the spin rinse dryer.
  • the edge portion of the substrate can be processed by the chemical cleaning device while the substrate is rotated by the spin rinse dryer.
  • the spin rinse dryer generally has a cover that prevents the liquid on the substrate from splashing, the chemical solution supplied by the chemical cleaning device is also prevented from splashing outside the spin rinse dryer. be able to. Therefore, it is not necessary to provide the oxide film removing apparatus with a mechanism for rotating the substrate and a cover for preventing the chemical solution from being scattered, so that the cost can be reduced.
  • the footprint of the whole plating apparatus can be reduced by providing the oxide film removing apparatus in the spin rinse dryer.
  • the chemical solution cleaning device is disposed at a position where the chemical solution can be locally supplied to the edge portion of the substrate from above the substrate.
  • the plating apparatus includes a sponge cleaning apparatus that removes particles present on the edge portion of the substrate.
  • the plating apparatus irradiates light to the edge portion of the substrate from which at least one of the organic substance and the oxide film existing on the edge portion is locally removed, and reflects the intensity of the reflected light.
  • a sensor configured to measure absorbance.
  • the intensity or absorbance of the reflected light by measuring the intensity or absorbance of the reflected light, contamination of the edge portion with respect to the substrate from which at least one of the organic matter and the oxide film existing on the edge portion has been locally removed is obtained. It can be determined whether the material has been sufficiently removed. As a result, it is possible to determine whether or not contaminants are present on the edge portion of the substrate before the plating process, and thereafter, the plating process can be performed on the substrate having no contaminants remaining on the edge portion. In addition, it is possible to more reliably prevent the deterioration of the in-plane uniformity of the plating film thickness of the substrate W caused by the variation in the contact resistance of the electrical contacts of the substrate holder.
  • a plating method for plating a substrate includes a removal step of locally removing at least one of an organic substance and an oxide film present on an edge portion of the substrate, a step of holding the substrate on a substrate holder, and a holding on the substrate holder. And a step of plating the substrate.
  • the contact resistance of the electrical contact of the substrate holder varies due to at least one of the organic substance and the oxide film present on the edge of the substrate without adversely affecting the resist pattern formed on the surface other than the edge of the substrate. And the deterioration of the uniformity of the plating film thickness can be prevented.
  • the plating method includes a step of forming a resist pattern on the substrate and an ashing step of ashing the resist pattern, and the removing step is executed after the ashing step.
  • the removal step is performed after the ashing step, a predetermined time elapses after the ashing step, and at least one of adhesion of organic substances to the edge portion of the substrate and formation of an oxide film occurs. Even so, at least one of the organic substance and the oxide film present on the edge portion of the substrate can be locally removed by the removing step.
  • the removing step includes a step of locally emitting UV or plasma to the edge portion of the substrate.
  • a resist is coated on a substrate to be plated. If UV or plasma is radiated to the resist, the resist may be modified and damaged. According to this embodiment, UV or plasma can be locally emitted to the edge portion of the substrate. Thereby, UV or plasma is not emitted to the surface other than the edge portion of the substrate, that is, the portion where the resist is applied on the substrate, so that the edge portion of the substrate is not damaged without damaging the resist on the substrate. The organic matter can be eliminated.
  • the removing step includes a step of supplying a chemical solution locally to the edge portion of the substrate.
  • a seed layer is formed on a substrate to be plated. If the chemical solution is left on the seed layer, the seed layer may be dissolved. For this reason, when the chemical solution adheres to a portion other than the edge of the substrate to be plated, that is, the seed layer exposed from the opening of the resist pattern, sufficient cleaning is required so that the chemical solution does not remain.
  • the chemical solution can be locally supplied to the edge portion of the substrate. Accordingly, the oxide film formed on the edge portion of the substrate can be removed without attaching a chemical solution to the seed layer exposed from the opening of the resist pattern. Therefore, the cleaning time of the substrate can be greatly reduced as compared with the case where the chemical solution is attached to the entire surface of the substrate.
  • the chemical solution contains 3 wt% or more and 15 wt% or less of dilute sulfuric acid or 2 wt% or more and 20 wt% or less of citric acid.
  • the oxide film can be removed without dissolving the seed layer on the edge portion of the substrate. If the dilute sulfuric acid is less than 3 wt% or the citric acid is less than 2 wt%, the acid concentration may be too low to remove the oxide film properly. Further, if the diluted sulfuric acid exceeds 15 wt% or the citric acid exceeds 20 wt%, the acid concentration may be too high and the seed layer on the edge portion of the substrate may be dissolved.
  • the plating method has a step of removing particles by bringing a sponge head into contact with the edge portion of the rotating substrate.
  • the removing step includes a step of locally removing the oxide film after locally desorbing organic substances present at the edge portion of the substrate.
  • the removing step includes a step of locally removing at least one of an organic substance and an oxide film existing within a range of 2 mm from the peripheral edge of the substrate toward the center of the substrate.
  • the electrical contact of the substrate holder contacts an edge portion within a range of 2 mm from the peripheral portion of the substrate. Therefore, according to this embodiment, it is possible to locally remove at least one of the organic substance and the oxide film present in the portion on the substrate with which the electrical contact of the substrate holder contacts.
  • the removing step includes at least one of an organic substance and an oxide film existing in a region up to the peripheral edge of the substrate adjacent to a region sealed with a sealing member when the substrate is held by a substrate holder. Removing one of them locally.
  • the plating method irradiates light to the edge portion of the substrate from which at least one of the organic substance or the oxide film existing on the edge portion is locally removed, and reflects the intensity of the light reflected. Or it has the process of measuring a light absorbency.
  • the intensity or absorbance of the reflected light by measuring the intensity or absorbance of the reflected light, contamination of the edge portion with respect to the substrate from which at least one of the organic matter and the oxide film existing on the edge portion has been locally removed is obtained. It can be determined whether the material has been sufficiently removed. As a result, it is possible to determine whether or not contaminants are present on the edge portion of the substrate before the plating process, and thereafter, the plating process can be performed on the substrate having no contaminants remaining on the edge portion. In addition, it is possible to more reliably prevent the deterioration of the in-plane uniformity of the plating film thickness of the substrate W caused by the variation in the contact resistance of the electrical contacts of the substrate holder.
  • a plating apparatus for plating a substrate locally applies at least one of a plating tank for performing plating by applying a voltage to the substrate held by a substrate holder, and an organic substance, an oxide film, and particles present on the edge portion of the substrate. And an edge portion cleaning device for removing the target.
  • the edge portion of the substrate it is possible to locally remove at least one of organic substances, oxide films, and particles present on the edge portion of the substrate before being set on the substrate holder. Therefore, the contact of the electrical contact of the substrate holder by at least one of the organic substance, the oxide film, and the particles existing on the edge portion of the substrate without adversely affecting the resist pattern formed on the surface other than the edge portion of the substrate. Resistance variation can be suppressed, and deterioration of the uniformity of the plating film thickness can be prevented.
  • a plating method for plating a substrate includes a removal step of locally removing at least one of organic substances, oxide films, and particles present on the edge portion of the substrate before being held by the substrate holder, and holding the substrate on the substrate holder. And a step of performing plating on the substrate held by the substrate holder.
  • the edge portion of the substrate it is possible to locally remove at least one of organic substances, oxide films, and particles present on the edge portion of the substrate before being set on the substrate holder. Therefore, the contact of the electrical contact of the substrate holder by at least one of the organic substance, the oxide film, and the particles existing on the edge portion of the substrate without adversely affecting the resist pattern formed on the surface other than the edge portion of the substrate. Resistance variation can be suppressed, and deterioration of the uniformity of the plating film thickness can be prevented.
  • the edge part cleaning apparatus includes an organic substance detaching apparatus that locally detaches organic substances present on the edge part of the substrate, and the organic substance detaching apparatus includes A UV irradiation apparatus for irradiating UV to an edge portion of the substrate or a plasma irradiation apparatus for radiating plasma to the edge portion of the substrate;
  • a resist is coated on a substrate to be plated. If UV or plasma is radiated to the resist, the resist may be modified and damaged. According to this embodiment, UV or plasma can be locally emitted to the edge portion of the substrate. Thereby, UV or plasma is not emitted to the surface other than the edge portion of the substrate, that is, the portion where the resist is applied on the substrate, so that the edge portion of the substrate is not damaged without damaging the resist on the substrate. The organic matter can be eliminated.
  • the edge cleaning apparatus includes a head configured to apply UV or plasma locally to the edge of the substrate, and the head in the horizontal direction. It has an actuator to move.
  • the edge portion can be cleaned by moving the head portion along the edge portion even for a rectangular substrate, for example. it can.
  • the actuator includes a first actuator that moves the head portion in a first direction, and a second that moves the head portion in a second direction orthogonal to the first direction. And an actuator.
  • the head portion can be moved in the first direction and the second direction. For this reason, not only a head part can be moved along an edge part but a head part can be aligned in the direction orthogonal to the direction where an edge part extends. Therefore, for example, even when the substrate is a rectangular substrate having a long side and a short side, the head portion can be aligned with both the long-side edge portion and the short-side edge portion.
  • the edge part cleaning apparatus has a control unit that controls the head part and the actuator, and the actuator moves the head part along the edge part of the substrate.
  • the control unit is configured to move the head unit and the head unit so as to simultaneously perform UV or plasma radiation by the head unit and movement of the head unit along the edge of the substrate by the actuator. Control the actuator.
  • UV or plasma can be emitted while moving the head portion along the edge portion of the rectangular substrate.
  • the edge part cleaning apparatus has a turning mechanism that turns the head part, and the control part uses the head part when the head part turns by the turning mechanism.
  • the head unit and the turning mechanism are controlled so as to stop the emission of UV or plasma.
  • the head portion can be swiveled, the head portion can be easily moved on the four edge portions of the rectangular substrate. Further, since UV or plasma is not emitted by the head while the head is turning, it is possible to prevent UV or plasma from being emitted to an unintended region on the rectangular substrate.
  • the edge cleaning apparatus includes a rotation mechanism that rotates the substrate, a control unit that controls the head unit, the rotation mechanism, and the actuator.
  • the control unit controls the head unit and the rotation mechanism so as to stop radiation of UV or plasma by the head unit when the substrate is rotated by the rotation mechanism.
  • the substrate can be rotated, the four edge portions of the rectangular substrate can be easily moved below the head portion. Further, since the UV or plasma is not emitted by the head unit while the substrate is rotating, it is possible to prevent UV or plasma from being emitted to an unintended region on the rectangular substrate.
  • the removing step includes a step of emitting UV or plasma while moving a head portion that emits UV or plasma along the edge portion of the rectangular substrate.
  • UV or plasma can be emitted while moving the head portion along the edge portion of the rectangular substrate.
  • the removing step includes a step of moving the head portion in a horizontal direction to align the head portion with an edge portion of the rectangular substrate.
  • the head portion can be aligned with both the long side edge portion and the short side edge portion.
  • the head portion is turned while stopping the emission of UV or plasma.
  • the head portion can be swiveled, the head portion can be easily moved on the four edge portions of the rectangular substrate. Further, since UV or plasma is not emitted by the head while the head is turning, it is possible to prevent UV or plasma from being emitted to an unintended region on the rectangular substrate.
  • the removing step radiates UV or plasma to one of the edge portions of the rectangular substrate, and then stops the emission of the UV or plasma while stopping the emission of UV or plasma.
  • the substrate can be rotated, the four edge portions of the rectangular substrate can be easily moved below the head portion. Further, since the UV or plasma is not emitted by the head unit while the substrate is rotating, it is possible to prevent UV or plasma from being emitted to an unintended region on the rectangular substrate.
  • the present invention it is possible to prevent the deterioration of the uniformity of the plating film thickness caused by at least one of the oxide film formed on the edge portion of the substrate and the organic substance adhering to the edge portion of the substrate.
  • FIG. 1 is an overall layout diagram of a plating apparatus according to a first embodiment. It is a perspective view of the board
  • FIG. 5 is a schematic sectional view of the aligner taken along line 5-5 shown in FIG.
  • FIG. 6 is a schematic cross-sectional view of the aligner taken along arrow 6-6 shown in FIG.
  • FIG. 25 is a plan view of the organic matter detachment apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detachment apparatus shown in FIG. 24.
  • FIG. 25 is a plan view of the organic matter detachment apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detachment apparatus shown in FIG. 24.
  • FIG. 25 is a plan view of the organic matter detachment apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detachment apparatus shown in FIG. 24.
  • FIG. 25 is a plan view of the organic matter detachment apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detachment apparatus shown in FIG. 24.
  • FIG. 25 is a plan view of the organic matter detachment apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detachment apparatus shown in FIG. 24.
  • FIG. 25 is a plan view of the organic matter detachment apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detachment apparatus shown in FIG. 24.
  • It is a schematic side view of another example of the organic substance detachment apparatus provided in the fixing unit.
  • FIG. 27 is a plan view of the organic matter detachment apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detachment apparatus shown in FIG. 26.
  • FIG. 27 is a plan view of the organic matter detachment apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detachment apparatus shown in FIG. 26.
  • FIG. 27 is a plan view of the organic matter detachment apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detachment apparatus shown in FIG. 26.
  • It is a schematic side view of another example of the organic substance detachment apparatus provided in the fixing unit.
  • FIG. 29 is a plan view of the organic matter detaching apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detaching apparatus shown in FIG. 28.
  • FIG. 29 is a plan view of the organic matter detaching apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detaching apparatus shown in FIG. 28.
  • FIG. 29 is a plan view of the organic matter detaching apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detaching apparatus shown in FIG. 28.
  • FIG. 1 is an overall layout diagram of the plating apparatus according to the first embodiment. As shown in FIG. 1, this plating apparatus is roughly divided into a load / unload unit 170A for loading a substrate to the substrate holder 60 or unloading the substrate from the substrate holder 60, and a processing unit 170B for processing the substrate. It is done.
  • a load / unload unit 170A for loading a substrate to the substrate holder 60 or unloading the substrate from the substrate holder 60
  • a processing unit 170B for processing the substrate. It is done.
  • the load / unload unit 170A includes three hoops (Front-Opening Unified Pod: FOUP) 102, an aligner 40 for aligning the orientation flats and notches of the substrate in a predetermined direction, and after the plating process. And a spin rinse dryer 20 for drying the substrate by rotating it at a high speed.
  • the hoop 102 stores a plurality of substrates such as semiconductor wafers in multiple stages.
  • Near the spin rinse dryer 20 there is provided a fixing unit 120 on which the substrate holder 60 is placed and the substrate is attached and detached.
  • a substrate transfer device 122 including a transfer robot that transfers a substrate between these units is disposed.
  • the aligner 40 according to the first embodiment is an organic substance detachment device (such as FIGS. 4 and 6) that locally desorbs organic substances present at the edge portion of the substrate before being set on the substrate holder 60. See).
  • the fixing unit 120 is configured so that two substrate holders 60 can be placed thereon. In the fixing unit 120, the substrate is transferred between the one substrate holder 60 and the substrate transfer device 122, and then the substrate is transferred between the other substrate holder 60 and the substrate transfer device 122.
  • the processing unit 170B of the plating apparatus includes a stocker 124, a pre-wet tank 126, a pre-soak tank 128, a first cleaning tank 130a, a blow tank 132, a second cleaning tank 130b, and a plating tank 10.
  • the stocker 124 the substrate holder 60 is stored and temporarily placed.
  • the pre-wet tank 126 the substrate is immersed in pure water.
  • the pre-soak tank 128, the oxide film on the surface of the conductive layer such as the seed layer formed on the surface of the substrate is removed by etching.
  • the pre-soaked substrate is cleaned with a cleaning liquid (pure water or the like) together with the substrate holder 60.
  • the substrate is drained after cleaning.
  • the substrate after plating is cleaned with the cleaning liquid together with the substrate holder 60.
  • the stocker 124, the pre-wet tank 126, the pre-soak tank 128, the first cleaning tank 130a, the blow tank 132, the second cleaning tank 130b, and the plating tank 10 are arranged in this order.
  • the plating tank 10 includes, for example, a plurality of plating cells 134 provided with an overflow tank. Each plating cell 134 houses one substrate therein and immerses the substrate in a plating solution held inside. By applying a voltage between the substrate and the anode in the plating cell 134, plating such as copper plating is performed on the substrate surface.
  • the plating apparatus has a substrate holder transport device 140 that employs a linear motor system, for example, that transports the substrate holder 60 together with the substrate between these devices, located on the side of these devices.
  • the substrate holder transport device 140 includes a first transporter 142 and a second transporter 144.
  • the first transporter 142 is configured to transfer the substrate between the fixing unit 120, the stocker 124, the pre-wet tank 126, the pre-soak tank 128, the first cleaning tank 130 a, and the blow tank 132.
  • the second transporter 144 is configured to transfer the substrate between the first cleaning tank 130 a, the second cleaning tank 130 b, the blow tank 132, and the plating tank 10.
  • the plating apparatus includes only one of the first transporter 142 and the second transporter 144, and any one of the transporters includes the fixing unit 120, the stocker 124, the pre-wet bath 126,
  • the substrate may be transferred among the pre-soak tank 128, the first cleaning tank 130a, the second cleaning tank 130b, the blow tank 132, and the plating tank 10.
  • FIG. 2 is a perspective view of the substrate holder 60 used in the plating apparatus shown in FIG.
  • the substrate holder 60 includes a first holding member 65 made of, for example, vinyl chloride and having a rectangular flat plate shape, and a second holding member attached to the first holding member 65 through a hinge 63 so as to be opened and closed. 66.
  • a holding surface 68 for holding the substrate is provided at a substantially central portion of the first holding member 65 of the substrate holder 60.
  • inverted L-shaped clampers 67 having protrusions protruding inward along the circumference of the holding surface 68 are provided at equal intervals. .
  • a pair of substantially T-shaped hands 69 are connected to the end of the first holding member 65 of the substrate holder 60 as a support when the substrate holder 60 is transported or supported in a suspended manner.
  • the substrate holder 60 is suspended and supported vertically by hooking the hand 69 on the upper surface of the peripheral wall of the stocker 124. Further, the substrate holder 60 is conveyed by holding the hand 69 of the substrate holder 60 supported by the suspension by the first transporter 142 or the second transporter 144. Note that the substrate holder 60 is also supported by being suspended on the peripheral walls via the hand 69 in the pre-wet tank 126, the pre-soak tank 128, the cleaning tanks 130a and 130b, the blow tank 132, and the plating tank 10.
  • the hand 69 is provided with an external contact (not shown) for connection to an external power supply unit.
  • the external contacts are electrically connected to a plurality of conductors 73 (see FIG. 3) provided on the outer periphery of the holding surface 68 via a plurality of wirings.
  • the second holding member 66 includes a base 61 fixed to the hinge 63 and a ring-shaped seal holder 62 fixed to the base 61.
  • a presser ring 64 for pressing and fixing the seal holder 62 against the first holding member 65 is rotatably mounted on the seal holder 62 of the second holding member 66.
  • the presser ring 64 has a plurality of protrusions 64a that protrude outward at the outer peripheral portion thereof.
  • the upper surface of the protruding portion 64a and the lower surface of the inwardly protruding portion of the clamper 67 have tapered surfaces that are inclined in opposite directions along the rotational direction.
  • the substrate When holding the substrate, first, the substrate is placed on the holding surface 68 of the first holding member 65 with the second holding member 66 open, and the second holding member 66 is closed. Subsequently, the presser ring 64 is rotated clockwise, and the protrusion 64 a of the presser ring 64 is slid into the inner projecting portion (lower side) of the clamper 67. Thus, the first holding member 65 and the second holding member 66 are tightened and locked to each other via the tapered surfaces provided on the presser ring 64 and the clamper 67, respectively, and the substrate is held. When releasing the holding of the substrate, the presser ring 64 is rotated counterclockwise while the first holding member 65 and the second holding member 66 are locked. As a result, the protrusion 64a of the presser ring 64 is removed from the inverted L-shaped clamper 67, and the holding of the substrate is released.
  • FIG. 3 is a cross-sectional view showing electrical contacts of the substrate holder 60 shown in FIG.
  • the substrate W is placed on the holding surface 68 of the first holding member 65.
  • a plurality of (one in the figure) conductors 73 connected to a plurality of wires extending from external contacts provided on the hand 69 shown in FIG. has been.
  • the conductor 73 has a spring characteristic on the surface of the first holding member 65 at the end of the conductor 73 on the side of the substrate W.
  • a plurality of substrates are arranged outside the circumference of the substrate W so as to be exposed in this state.
  • the surface of the seal holder 62 facing the first holding member 65 (the lower surface in the figure) is a seal that is pressed against the outer peripheral portion of the surface of the substrate W and the first holding member 65 when the substrate W is held by the substrate holder 60.
  • a member 70 is attached.
  • the seal member 70 includes a lip portion 70 a that seals the surface of the substrate W and a lip portion 70 b that seals the surface of the first holding member 65.
  • a support 71 is attached to the inside of the seal member 70 sandwiched between the pair of lip portions 70a and 70b.
  • An electrical contact 72 configured to be able to supply power from the conductor 73 is fixed to the support 71 with, for example, a screw, and a plurality of electrical contacts 72 are arranged along the circumference of the substrate W.
  • the electrical contact 72 has an electrical contact end portion 72 a extending toward the inside of the holding surface 68 and a leg portion 72 b configured to be able to supply power from the conductor 73.
  • the conductor 73 is electrically connected to the leg portion 72b of the electrical contact 72, and the electrical contact end
  • the portion 72a contacts the seed layer on the edge portion of the substrate W. Accordingly, power can be supplied to the substrate W via the electrical contact 72 in a state where the substrate W is held by the substrate holder 60 while being sealed by the sealing member 70.
  • a resist pattern is formed in advance on the substrate W on which the seed layer is formed.
  • UV irradiation or the like is performed to remove the resist residue on the substrate surface (ashing process), and the resist surface is hydrophilized (discum process). ) Is performed.
  • the substrate W that has been subjected to the ashing process and the discaming process is then transferred to the plating apparatus and held by the substrate holder 60.
  • an oxide film is formed or an organic substance volatilized from the resist adheres as time elapses from the ashing process and the discaming process. There is. As shown in FIG.
  • the electrical contact 72 contacts the edge portion of the substrate W, if an oxide film is formed on the seed layer on the edge portion of the substrate W or an organic substance adheres, the electrical contact of the substrate holder 60 is performed. There is a problem that the contact resistance of the contact 72 varies and the uniformity of the plating film thickness deteriorates.
  • the aligner 40 shown in FIG. 1 is provided with an organic substance desorbing device to desorb (remove) organic substances formed on the seed layer on the edge portion of the substrate W.
  • the edge portion of the substrate W refers to a region where the electrical contact 72 can contact, or a periphery of the substrate W rather than a portion where the seal member 70 contacts when the substrate W is held by the substrate holder 60.
  • An area on the part side refers to a region on the outer peripheral side with respect to the portion where the lip portion 70a of the seal member 70 shown in FIG. More preferably, it is within the range of about 2 mm.
  • FIG. 4 is a schematic top view of the aligner 40 shown in FIG. 5 is a schematic cross-sectional view of the aligner 40 taken along the arrow 5-5 shown in FIG. 4, and FIG. 6 is a schematic cross-sectional view of the aligner 40 taken along the arrow 6-6 shown in FIG.
  • the aligner 40 includes a base 41, a rotary stage 42, an aligner light source 43, a photodetector 44, and an organic substance detaching device 45 (corresponding to an example of an edge portion cleaning device).
  • an aligner light source 43 a rotary stage 42
  • an aligner light source 43 a photodetector 44
  • an organic substance detaching device 45 corresponding to an example of an edge portion cleaning device.
  • the rotation stage 42 is configured to suck the back surface of the substrate W, and rotates the substrate W in the circumferential direction.
  • the rotary stage 42 sucks the substrate W by an electrostatic suction type or a vacuum suction type.
  • the aligner light source 43 is configured to irradiate light 46 near the edge portion of the substrate W rotated by the rotary stage 42.
  • the notch of the substrate W is moved to the position where the light 46 from the aligner light source 43 is irradiated by the rotation of the substrate W, the light 46 passes through the notch and reaches the photodetector 44.
  • the aligner 40 can recognize that the notch of the substrate W is located immediately below the aligner light source 43, and can align the orientation of the substrate W.
  • the organic substance detachment device 45 is a UV irradiation device or a plasma radiation device.
  • UV or plasma can be locally applied to the edge portion of the substrate W from above the substrate W.
  • the organic substance desorbing device 45 can locally apply UV or plasma to the edge portion of the substrate W before being held by the substrate holder 60. In other words, the region other than the edge portion of the substrate W is not exposed to UV or plasma.
  • UV or plasma can be efficiently applied over the entire periphery of the edge portion of the substrate W.
  • the distance between the UV irradiation source of the UV irradiation apparatus or the plasma radiation port of the plasma radiation apparatus and the substrate W is preferably about 1 mm or more and about 10 mm or less. If this distance is less than 1 mm, there is a possibility that the substrate and the UV radiation source or the plasma radiation port of the plasma radiation device are in physical contact. If this distance exceeds 10 mm, UV or plasma may not be locally irradiated.
  • this distance is set to about 2 mm or more and about 5 mm or less. More preferably.
  • the organic substance detachment device 45 is a UV irradiation device
  • the UV light source for example, a high pressure mercury lamp, a low pressure mercury lamp, a black light, or a laser light source capable of emitting light in the UV region
  • a high pressure mercury lamp, a low pressure mercury lamp, a black light, or a laser light source capable of emitting light in the UV region can be employed.
  • High-pressure mercury lamps, low-pressure mercury lamps, and black lights tend to diverge light, so when using these light sources, install the light source near the substrate W or use only an optical system at the edge. It is preferable to irradiate UV.
  • the organic substance desorbing device 45 is a plasma radiation device, for example, an atmospheric remote plasma device or the like can be employed.
  • the aligner 40 further irradiates the edge portion of the substrate W as excitation light with light in the ultraviolet region (200 nm to 380 nm), for example, light having a wavelength of 365 nm, from above the edge portion to the edge portion of the substrate W.
  • a sensor spectrophotometer
  • a film thickness meter may be provided.
  • This sensor (not shown) may be provided in the organic substance detachment device 45 or may be provided separately in the aligner 40.
  • the control unit of the plating apparatus determines the contaminants (organic matter and oxide film) at the edge depending on whether the absorbance or fluorescence intensity value measured by this sensor is greater than a preset threshold value. It is configured so that it can be determined whether or not (including) is sufficiently removed. For example, when it is determined that the contaminants at the edge portion are not sufficiently removed, the organic substance detachment apparatus 45 may repeatedly perform the step of locally emitting UV or plasma to the edge portion of the substrate W. Good.
  • the substrate W is transported to the fixing unit 120 by the substrate transport device 122, assuming that the removal of the organic matter has been completed. Subsequently, a series of plating processes are performed. In this way, it is determined whether or not the contaminant is present on the edge portion of the substrate W before the plating process, and then the plating process is performed on the substrate on which the contaminant does not remain on the edge portion. Further, it is possible to more reliably prevent the deterioration of the in-plane uniformity of the plating film thickness of the substrate W caused by the variation in the contact resistance of the electrical contacts of the substrate holder 60.
  • FIG. 7 is a flowchart showing the plating method according to the first embodiment.
  • a resist pattern is formed on the substrate W before the substrate W is transported to the plating apparatus shown in FIG. 1 (step S601).
  • the substrate W on which the resist pattern is formed is irradiated with UV, the resist residue on the surface of the substrate W is removed (ashing treatment), and the resist surface is hydrophilized (discum treatment) (step S602).
  • the processes in steps S601 and S602 are performed in an arbitrary apparatus other than the plating apparatus shown in FIG.
  • the substrate W is transported to the aligner 40 by the substrate transport device 122 from the FOUP 102 containing the substrate W.
  • the edge portion of the substrate W is cleaned (step S603).
  • UV or plasma is locally applied to the edge portion of the substrate W by the organic substance desorbing device 45, and the organic substance is desorbed.
  • the orientation of the substrate W is aligned by the aligner 40.
  • a sensor (not shown) is provided in the aligner 40, UV or plasma is applied to at least one of the organic substance and the oxide film present on the edge portion of the substrate W. After applying and removing locally, the presence or absence of contaminants (including organic substances and oxide films) at the edge portion can be confirmed.
  • a sensor spectrophotometer or fluorescent reflection film thickness meter
  • the sensor is scanned from the center of the substrate to the edge (or from the edge to the center of the substrate), and the ultraviolet region (200 nm) from the sensor toward the surface of the substrate W.
  • 380 nm for example, light having a wavelength of 365 nm is irradiated as excitation light, and the absorbance or fluorescence intensity is measured.
  • the substrate surface has an edge portion that has been subjected to UV or plasma treatment and a surface to be plated that has not been subjected to UV or plasma treatment, and the seed layer is the entire surface of the substrate (the surface to be plated and the edge portion). Is formed. And by making a sensor scan a to-be-plated surface and an edge part, the light absorbency or fluorescence intensity of both a to-be-plated surface and an edge part can be measured.
  • the control unit of the plating apparatus for example, compares the absorbances of both the plated surface and the edge portion, and for example, the ratio of the absorbance of the edge portion to the absorbance of the plated surface is a preset threshold value (for example, 50% or less).
  • the value of the ratio is larger than the threshold value, it can be determined that the contaminants (including organic substances and oxide film) at the edge portion are not sufficiently removed.
  • the value of the ratio is not larger than the threshold value, it can be determined that the contaminants (including organic substances and oxide film) at the edge are sufficiently removed.
  • the fluorescence intensity it is possible to determine whether or not the contaminants at the edge portion are sufficiently removed by comparing the predetermined threshold value with the measured value.
  • the step of locally radiating UV or plasma to the edge portion of the substrate W may be repeated. If it is determined that the contaminants at the edge are sufficiently removed, it is assumed that the removal of the organic matter has been completed, and the substrate is transferred to the fixing unit 120 by the substrate transfer device 122, and a series of plating processes are performed. The In this way, it is determined whether or not the contaminant is present on the edge portion of the substrate W before the plating process, and then the plating process is performed on the substrate on which the contaminant does not remain on the edge portion. Further, it is possible to more reliably prevent the deterioration of the in-plane uniformity of the plating film thickness of the substrate W caused by the variation in the contact resistance of the electrical contacts of the substrate holder 60.
  • the substrate W on which the edge portion has been cleaned is transported to the fixing unit 120 by the substrate transport device 122 and set on the substrate holder 60 (step S604).
  • the electrical contact of the substrate holder 60 contacts the edge portion of the cleaned substrate W.
  • substrate holder 60 resulting from adhesion of organic substance can be reduced.
  • the substrate W held on the substrate holder 60 is first transferred to the pre-wet tank 126 by the substrate holder transfer device 140, and the substrate W is immersed in pure water stored in the pre-wet tank 126 (step S605). Subsequently, the substrate W is transported to the pre-soak tank 128, and the surface of the substrate W is subjected to acid cleaning (step S606). Specifically, the substrate W is immersed in a chemical solution such as sulfuric acid or nitric acid stored in the pre-soak tank 128, and the oxide film on the surface of the seed layer formed on the surface of the substrate is removed by etching.
  • a chemical solution such as sulfuric acid or nitric acid stored in the pre-soak tank 128, and the oxide film on the surface of the seed layer formed on the surface of the substrate is removed by etching.
  • the acid-cleaned substrate W is then immersed in pure water stored in the first cleaning tank 130a, and the chemical solution adhering to the surface of the substrate W is cleaned. Good.
  • the substrate W is immersed in one of the plating cells 134 of the plating tank 10 and a plating process is performed (step S607).
  • a QDR (Quick Damp Rinse) process is performed on the substrate W having a plating film formed on the surface (step S608). Specifically, the substrate W is immersed in pure water accommodated in the second cleaning tank 130b, and the plating solution adhering to the surface of the substrate W is cleaned.
  • the substrate W held on the substrate holder 60 is transported to the fixing unit 120, and the substrate W is removed from the substrate holder 60.
  • the substrate transfer device 122 receives the substrate W from the fixing unit 120 and transfers the substrate W to the spin rinse dryer 20.
  • the surface of the substrate W is cleaned and dried in the spin rinse dryer 20 (step S609).
  • the present embodiment before the substrate holder 60 is set, organic substances present on the edge portion of the substrate W can be locally removed. Therefore, variation in the contact resistance of the electrical contact 72 of the substrate holder 60 caused by organic substances present at the edge portion of the substrate W is suppressed without adversely affecting the resist pattern formed on the surface of the substrate W, and the plating film thickness is reduced. It is possible to prevent the deterioration of the uniformity.
  • UV or plasma can be locally emitted to the edge portion of the substrate W.
  • UV or plasma is not emitted to the surface other than the edge portion of the substrate W, that is, the portion where the resist is coated on the substrate W, so that the edge portion of the substrate W does not damage the resist.
  • the organic matter can be eliminated.
  • the edge portion of the substrate W can be processed by the UV irradiation device or the plasma irradiation device while rotating the substrate by the aligner 40. . Therefore, it is not necessary to provide a mechanism for rotating the substrate in the organic substance desorbing device 45, so that the cost can be reduced. Moreover, the footprint of the whole plating apparatus can also be reduced by providing the organic substance detaching apparatus 45 in the aligner 40.
  • FIG. 8 is an overall layout diagram of another example of a plating apparatus according to the first embodiment.
  • the organic substance desorbing device 45 is provided in the load / unload unit 170 ⁇ / b> A separately from the aligner 40.
  • the aligner 40 has a configuration in which the organic substance detaching device 45 is removed from the configuration shown in FIGS.
  • the organic substance detachment apparatus 45 needs to have a mechanism similar to that of the rotation stage 42 shown in FIGS. 4 to 6 for rotating the substrate W. According to the plating apparatus shown in FIG.
  • the organic substance desorbing device 45 since the organic substance desorbing device 45 is provided separately from the aligner 40, the process of the organic substance desorbing apparatus 45 and the process of the aligner 40 are separately performed on a plurality of substrates W. be able to. Therefore, when the organic substance desorption process requires time, and the throughput of the entire process is determined by the processing time of the organic substance desorption process, the throughput is higher than that of the plating apparatus shown in FIG. Can be improved.
  • the organic substance detaching device 45 can also be provided in the spin rinse dryer 20.
  • a sensor configured to measure the absorbance to the spin rinse dryer 20 or a sensor for irradiating the light in the fluorescent region and monitoring the intensity of the reflected light
  • a fluorescent reflection film thickness meter may be provided (not shown).
  • the sensor is positioned above the edge portion of the substrate W during or after the cleaning of the edge portion. Then, the substrate W is rotated, light is emitted from the sensor to the edge portion of the substrate W, light reflected from the substrate W is received by the light receiving portion of the sensor, and the fluorescence intensity or absorbance of the reflected light is measured. .
  • the contaminant at least one of the organic substance and the oxide film
  • the plating process is performed on the substrate in which the contaminant does not remain in the edge portion. Therefore, it is possible to more reliably prevent deterioration of the in-plane uniformity of the plating film thickness of the substrate W caused by variations in the contact resistance of the electrical contacts of the substrate holder 60.
  • FIG. 9 is an overall layout diagram of the plating apparatus according to the second embodiment.
  • the second embodiment differs from the plating apparatus shown in FIG. 1 of the first embodiment in the configuration of the spin rinse dryer 20 and the aligner 40. Since other configurations are the same as those of the first embodiment, the same configurations as those of the first embodiment are denoted by the same reference numerals and description thereof is omitted.
  • the aligner 40 does not include the organic substance desorbing device 45 described in the first embodiment.
  • the spin rinse dryer 20 has an oxide film removing device that locally removes an oxide film present on the edge portion of the substrate before being set on the substrate holder 60.
  • FIG. 10 is a schematic view showing a spin rinse dryer 20 equipped with an oxide film removing device.
  • the spin rinse dryer 20 includes a rotary stage 21, a substrate chuck 22, a DIW nozzle 23, and an oxide film removing device 24 (corresponding to an example of an edge portion cleaning device).
  • the substrate chuck 22 is configured to grip the outer periphery of the substrate W.
  • the rotation stage 21 is configured to rotate the substrate chuck 22, and rotates the gripped substrate W in the circumferential direction when the substrate chuck 22 rotates.
  • the DIW nozzle 23 is configured to supply DIW (De-ionized Water) to a substantially central portion of the substrate W.
  • DIW De-ionized Water
  • the DIW supplied to the substrate W receives centrifugal force due to the rotation of the substrate W and flows toward the outer periphery of the substrate W.
  • the spin rinse dryer 20 has a cover that covers the periphery of the substrate W in order to prevent the DIW of the substrate W from scattering outside.
  • the oxide film removing device 24 is a chemical solution supply device that supplies the chemical solution 28 to the substrate.
  • the chemical solution nozzle 25 is configured to supply the chemical solution 28, the arm 26 is connected to the chemical solution nozzle 25, and the arm 26 is turned. And a rotating shaft 27 configured to do so.
  • the distance between the tip of the chemical nozzle 25 and the substrate W is preferably about 1 mm or more and about 10 mm or less. If this distance is less than 1 mm, the substrate and the chemical nozzle 25 may be in physical contact. If this distance exceeds 10 mm, there is a possibility that the chemical solution cannot be supplied locally.
  • the distance between the tip of the chemical solution nozzle 25 and the substrate is about 2 mm or more and about 5 mm. More preferably, it is as follows.
  • the oxide film removing device 24 In order to locally remove the oxide film existing at the edge portion of the substrate W by the oxide film removing device 24, the oxide film removing device 24 first turns the arm 26 according to the diameter of the substrate W, and then the chemical solution nozzle. 25 is positioned above the edge of the substrate W. With the chemical nozzle 25 positioned above the edge portion of the substrate W, DIW is supplied from the DIW nozzle 23 to the substantially central portion of the rotating substrate W, and the chemical solution 28 is ejected to the edge portion of the rotating substrate W. The chemical liquid 28 is supplied to the edge portion of the substrate W and flows toward the outer peripheral portion of the substrate W by receiving a centrifugal force by the rotation of the substrate W.
  • the oxide film removing device 24 can locally supply the chemical solution 28 to the edge portion of the substrate W.
  • the region other than the edge portion of the substrate W is not exposed to the chemical liquid 28 substantially.
  • the chemical liquid 28 can be efficiently supplied over the entire periphery of the edge portion of the substrate W.
  • the chemical solution 28 is supplied to the oxide film formed on the edge portion of the substrate W, the oxide film is dissolved and removed by the chemical solution 28.
  • the supply of the chemical liquid 28 is stopped and the supply of DIW is continued. As a result, the chemical solution 28 supplied to the edge portion of the substrate W is washed away.
  • the edge portion of the substrate W is a region where the electrical contact 72 can contact as described above, or a portion where the substrate W contacts the seal member 70 when the substrate W is held by the substrate holder 60. This is a region on the peripheral edge side of W.
  • the chemical solution spot-wise to the substrate it is assumed in advance that a part of the chemical solution may be scattered, and the chemical component / concentration that does not adversely affect the resist pattern is used.
  • the oxide film in the peripheral portion of the edge portion may be dissolved and removed by the chemical solution 28.
  • the chemical solution 28 for example, an acid that hardly damages the seed layer on the substrate W, such as dilute sulfuric acid or citric acid, can be used.
  • the chemical liquid 28 is preferably 3 wt% or more and 15 wt% or less of dilute sulfuric acid or 2 wt% or more and 20 wt% or less of citric acid. If dilute sulfuric acid is less than 3 wt% or citric acid is less than 2 wt%, the acid concentration may be too low to remove the oxide film properly. Further, if the diluted sulfuric acid exceeds 15 wt% or the citric acid exceeds 20 wt%, the acid concentration may be too high and the seed layer on the edge portion of the substrate may be dissolved.
  • FIG. 11 is a flowchart showing a plating method according to the second embodiment.
  • the plating method according to the second embodiment is the same as the plating method shown in FIG. Therefore, the description of the same part as the plating method of FIG. 7 is partially omitted.
  • the substrate W that has been subjected to the ashing process and the discaming process in step S602 is transported to the plating apparatus shown in FIG. Subsequently, the substrate W is transported to the spin rinse dryer 20 by the substrate transport device 122 from the FOUP 102 containing the substrate W.
  • the edge portion of the substrate W is cleaned (step S701). Specifically, in the spin rinse dryer 20, the oxide film present at the edge portion of the substrate W is removed by the oxide film removing device 24.
  • the edge portion of the substrate W is irradiated with light in the ultraviolet region (200 nm to 380 nm), for example, 365 nm as excitation light from above the edge portion.
  • a sensor spectrophotometer
  • a sensor fluorescence reflection film thickness meter
  • the sensor is positioned above the edge portion of the substrate W during or after the cleaning of the edge portion.
  • the substrate W is rotated, light is emitted from the sensor to the edge portion of the substrate W, light reflected from the substrate W is received by the light receiving portion of the sensor, and the fluorescence intensity or absorbance of the reflected light is measured. . Accordingly, it may be determined whether or not the oxide film at the edge portion of the substrate W has been sufficiently removed, and the state of the edge portion may be inspected. By doing in this way, it is determined before performing the plating process whether or not the contaminant is present in the edge portion of the substrate W, and thereafter, the plating process is performed on the substrate in which the contaminant does not remain in the edge portion. Therefore, it is possible to more reliably prevent deterioration of the in-plane uniformity of the plating film thickness of the substrate W caused by variations in the contact resistance of the electrical contacts of the substrate holder 60.
  • the substrate W on which the edge portion has been cleaned (in some cases, cleaning and inspection) is transferred to the fixing unit 120 by the substrate transfer device 122 and set on the substrate holder 60 (step S604).
  • the electrical contact of the substrate holder 60 contacts the edge portion of the cleaned substrate W.
  • the variation in the contact resistance of the electrical contact of the substrate holder 60 caused by the oxide film can be reduced.
  • the substrate W set in the substrate holder 60 is processed in the subsequent steps S605 to S609.
  • the oxide film present on the edge portion of the substrate can be locally removed before being set on the substrate holder 60. Therefore, variation in the contact resistance of the electrical contact 72 of the substrate holder 60 caused by the oxide film present at the edge portion of the substrate W is suppressed without adversely affecting the resist pattern formed on the surface of the substrate W, and the plating film Deterioration of thickness uniformity can be prevented.
  • the oxide film removing device 24 is provided in the spin rinse dryer 20, the edge portion of the substrate W can be processed with the chemical solution 28 while rotating the substrate by the spin rinse dryer 20. . Therefore, it is not necessary to provide the oxide film removing device 24 with a mechanism for rotating the substrate and a mechanism for preventing the chemical solution 28 from being scattered, so that the cost can be reduced. Further, since the spin rinse dryer 20 has a cover that prevents the liquid on the substrate W from splashing, the chemical solution 28 supplied by the chemical nozzle 25 is also prevented from splashing outside the spin rinse dryer 20. be able to. Furthermore, the footprint of the entire plating apparatus can be reduced by providing the oxide film removing device 24 in the spin rinse dryer 20.
  • a seed layer is formed on the substrate W to be plated. If the chemical solution 28 is left attached to the seed layer, the seed layer may be dissolved. For this reason, when the chemical liquid 28 adheres to a portion other than the edge of the substrate W to be plated, for example, the seed layer exposed from the opening of the resist pattern, sufficient cleaning is required so that the chemical liquid 28 does not remain.
  • the chemical liquid 28 can be locally supplied to the edge portion of the substrate W.
  • the oxide film formed on the edge portion of the substrate can be removed without attaching the chemical liquid 28 to the seed layer exposed from the opening of the resist pattern. Therefore, the cleaning time of the substrate W can be greatly shortened as compared with the case where the chemical liquid 28 is adhered to the entire surface of the substrate W.
  • FIG. 12 is an overall layout diagram of the plating apparatus according to the third embodiment.
  • the plating apparatus according to the third embodiment has a configuration in which the spin rinse dryer 20 in the plating apparatus shown in FIG. 8 in the first embodiment is replaced with the spin rinse dryer 20 shown in FIG. 10 according to the second embodiment. . Since other configurations are the same as those of the plating apparatus shown in FIG. 8 of the first embodiment, the same configurations as those of the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
  • the plating apparatus shown in FIG. 12 has a spin rinse dryer 20 provided with the oxide film removing apparatus 24 shown in FIG. For this reason, the present plating apparatus can locally remove both organic substances and oxide films present at the edge portion of the substrate W.
  • FIG. 13 is a flowchart showing a plating method according to the third embodiment.
  • the plating method according to the third embodiment is a method in which step S701 shown in FIG. 11 is combined with the plating method shown in FIG. That is, as shown in FIG. 13, the substrate W that has been subjected to the ashing process and the discaming process in step S602 is transported to the plating apparatus shown in FIG. Subsequently, the substrate W is transferred to the aligner 40 by the substrate transfer device 122 from the FOUP 102 containing the substrate W. In the aligner 40, the edge portion of the substrate W is cleaned (step S603). Specifically, in the aligner 40, organic substances present at the edge portion of the substrate W are desorbed by the organic substance desorbing device 45.
  • the edge portion is a region closer to the peripheral edge side of the substrate W than the portion with which the seal member 70 contacts when the substrate W is held by the substrate holder 60, for example, outside the substrate W. From the peripheral edge toward the center of the substrate, it is within a range of about 5 mm, more preferably within a range of about 2 mm.
  • the aligner 40 in order to measure the state of the edge portion of the substrate, is excited to emit light in the ultraviolet region (200 nm to 380 nm), for example, 365 nm from above the edge portion.
  • a sensor spectrophotometer
  • a sensor fluorescent reflection film thickness meter
  • the plating unit control unit will sufficiently contain contaminants (including organic substances and oxide films) at the edge.
  • the senor is positioned above the edge portion of the substrate W during or after the cleaning of the edge portion. Then, the substrate W is rotated, light is emitted from the sensor to the edge portion of the substrate W, light reflected from the substrate W is received by the light receiving portion of the sensor, and the fluorescence intensity or absorbance of the reflected light is measured. . As a result, it is determined whether or not the contaminants (including the organic matter and the oxide film) at the edge portion of the substrate W are sufficiently removed, and it is determined whether or not the contaminant is present at the edge portion. Good.
  • the plating process is performed on the substrate in which the contaminant does not remain in the edge portion. Therefore, it is possible to prevent deterioration of the in-plane uniformity of the plating film thickness of the substrate W caused by variations in the contact resistance of the electrical contacts of the substrate holder 60. Further, when it is determined whether or not contaminants are present on the edge portion of the substrate W during the cleaning of the edge portion of the substrate W, the end point of the cleaning is determined based on the determination result of this sensor. You can also Furthermore, the presence / absence of the substrate W having an abnormality in the edge portion can be determined based on the measurement result of the sensor.
  • the substrate W from which the organic substance at the edge portion has been detached is then transferred to the spin rinse dryer 20 by the substrate transfer device 122.
  • the edge portion of the substrate W is cleaned (step S701).
  • the oxide film present at the edge portion of the substrate W is detached by the oxide film removing device 24.
  • the edge portion refers to a region that is closer to the peripheral edge side of the substrate W than the portion with which the seal member 70 contacts when the substrate is held by the substrate holder.
  • the substrate W is a 300 mm wafer Means within the range of about 5 mm from the outer peripheral edge of the substrate W toward the center of the substrate, more preferably within the range of about 2 mm.
  • the component / concentration of the chemical solution is set to a component / concentration that does not adversely affect the resist pattern.
  • the oxide film existing around the edge portion can be removed together.
  • the substrate W on which the edge portion has been cleaned is transported to the fixing unit 120 by the substrate transport device 122 and set on the substrate holder 60 (step S604).
  • the electrical contacts of the substrate holder 60 come into contact with the edge portion of the cleaned substrate W. Thereby, the variation in the contact resistance of the electrical contact of the substrate holder 60 caused by the organic matter and the oxide film can be reduced.
  • the substrate W set in the substrate holder 60 is processed in the subsequent steps S605 to S609.
  • organic substances and oxide films present on the edge portion of the substrate can be locally removed. Therefore, without adversely affecting the resist pattern formed on the surface of the substrate W, it is possible to suppress variations in the contact resistance of the electrical contacts 72 of the substrate holder 60 due to organic substances and oxide films present on the edge portion of the substrate W, The deterioration of the uniformity of the plating film thickness can be prevented.
  • the organic substance detachment process may be performed after the chemical cleaning of the edge part (step S701).
  • FIG. 14 is an overall layout diagram of the plating apparatus according to the fourth embodiment.
  • the plating apparatus of the fourth embodiment is different from the plating apparatus of FIG. 1 according to the first embodiment in that it has a sponge cleaning device 80 and that it does not include the organic substance detachment device 45. Since other configurations are the same as those of the first embodiment, the same configurations as those of the first embodiment are denoted by the same reference numerals and description thereof is omitted.
  • the aligner 40 of the plating apparatus shown in FIG. 14 does not include the organic substance detachment apparatus 45 described in the first embodiment.
  • the sponge cleaning device 80 is provided in the load / unload unit 170A and locally removes particles present at the edge of the substrate W.
  • FIG. 15 is a schematic side view of the sponge cleaning device 80.
  • the sponge cleaning device 80 includes a rotary stage 81, a DIW nozzle 83, a sponge cleaning unit 84 (corresponding to an example of an edge cleaning device), and a cover 88.
  • the rotation stage 81 is configured to suck the back surface of the substrate W, and rotates the substrate W in the circumferential direction.
  • the rotary stage 81 sucks the substrate W by an electrostatic suction type or a vacuum suction type.
  • the DIW nozzle 83 is configured to supply DIW to a substantially central portion of the substrate W.
  • the DIW supplied to the substrate W receives centrifugal force due to the rotation of the substrate W and flows toward the outer periphery of the substrate W.
  • the cover 88 covers the periphery of the substrate W and prevents the DIW of the substrate W from scattering outside.
  • the sponge cleaning unit 84 includes a sponge head 85 that physically cleans the edge portion of the substrate W, an arm 86 connected to the sponge head 85, and a rotating shaft 87 configured to turn the arm 86.
  • the sponge head 85 is made of, for example, PVA (polyvinyl alcohol) and configured to be rotatable about a vertical axis.
  • the rotating shaft 87 is configured to be extendable and contractable in the axial direction.
  • the sponge cleaning unit 84 In order for the sponge cleaning unit 84 to locally remove particles present at the edge of the substrate W, first, the sponge cleaning device 80 rotates the arm 86 according to the diameter of the substrate W, and the sponge head 85 is moved to the substrate W. It is located above the edge part of. With the sponge head 85 positioned above the edge portion of the substrate W, the rotary shaft 87 contracts downward in the axial direction, causing the sponge head 85 to contact the edge portion of the substrate W. The sponge cleaning unit 84 rotates the sponge head 85 in a state where the sponge head 85 is in contact with the edge portion of the rotating substrate W. At this time, DIW is supplied to the substrate W by the DIW nozzle 83. Thereby, the sponge cleaning apparatus 80 can locally remove particles on the edge portion of the substrate W. Further, a sensor (not shown) may be provided in the sponge cleaning device 80 so as to determine whether or not a contaminant is present at the edge portion.
  • FIG. 16 is a flowchart showing a plating method according to the fourth embodiment.
  • the plating method according to the fourth embodiment includes step S801 instead of step S603 in the plating method illustrated in FIG. 7 according to the first embodiment. Description of the same part as the plating method of FIG. 7 is partially omitted.
  • the substrate W that has been subjected to the ashing process and the discaming process in step S602 is transferred to the plating apparatus shown in FIG. Subsequently, the substrate W is transferred from the FOUP 102 containing the substrate W to the sponge cleaning device 80 by the substrate transfer device 122.
  • the edge of the substrate W is cleaned (step S801). Specifically, in the sponge cleaning device 80, particles present on the edge portion of the substrate W are removed by the sponge cleaning unit 84.
  • the sponge cleaning apparatus 80 excites light in the ultraviolet region (200 nm to 380 nm), for example, 365 nm from above the edge portion on the edge portion of the substrate W.
  • a sensor spectrophotometer
  • a sensor fluorescent reflection film thickness meter
  • the plating unit control unit will sufficiently contain contaminants (including organic matter and oxide films) at the edge.
  • the sponge cleaning device 80 is provided with a sensor, the sensor is positioned above the edge portion of the substrate W during or after the cleaning of the edge portion. Then, the substrate W may be rotated to determine the presence or absence of particles at the edge portion of the substrate W, and to determine whether or not a contaminant is present at the edge portion. By doing in this way, it is determined before performing the plating process whether or not the contaminant is present in the edge portion of the substrate W, and thereafter, the plating process is performed on the substrate in which the contaminant does not remain in the edge portion.
  • the end point of the cleaning is determined based on the determination result of this sensor. You can also Furthermore, the presence / absence of the substrate W having an abnormality in the edge portion can be determined based on the measurement result of the sensor.
  • the substrate W on which the edge portion has been cleaned is transported to the fixing unit 120 by the substrate transport device 122 and set on the substrate holder 60 (step S604). At this time, since the particles at the edge portion of the substrate W are removed, the electrical contact of the substrate holder 60 comes into contact with the edge portion of the cleaned substrate W. Thereby, the dispersion
  • the substrate W set in the substrate holder 60 is processed in the subsequent steps S605 to S609.
  • the particles present on the edge portion of the substrate W can be locally removed before being set on the substrate holder 60. Therefore, it is possible to prevent particles from being sandwiched between the electrical contacts of the substrate holder 60 and the seed layer on the edge portion of the substrate W, and it is possible to suppress deterioration of contact resistance caused by the particles.
  • FIG. 17 is an overall layout diagram of the plating apparatus according to the fifth embodiment.
  • the plating apparatus of 5th Embodiment differs in having the sponge chemical
  • the sponge chemical cleaning device 90 shown in FIG. 17 is provided in the load / unload unit 170A and locally removes the oxide film and particles present on the edge portion of the substrate W.
  • the sponge chemical cleaning device 90 shown in FIG. is provided in the vicinity of the upper portion of the edge of the substrate W to check whether contaminants are present at the edge. May be determined.
  • a sensor spectrophotometer
  • a sensor configured to irradiate the edge portion of the substrate W from the upper portion of the edge portion with ultraviolet light (200 nm to 380 nm), for example, 365 nm as excitation light, and measure the absorbance of the edge portion.
  • a sensor fluorescent reflection film thickness meter
  • the plating unit control unit will sufficiently contain contaminants (including organic substances and oxide films) at the edge. Configured to determine if it has been removed
  • FIG. 18 is a schematic side view of the sponge chemical cleaning apparatus 90.
  • the sponge chemical cleaning apparatus 90 includes a rotary stage 91, a DIW nozzle 93, a sponge cleaning section 84, an oxide film removing apparatus 94 (corresponding to an example of an edge section cleaning apparatus), and a cover 98.
  • the rotation stage 91 is configured to suck the back surface of the substrate W, and rotates the substrate W in the circumferential direction.
  • the rotary stage 91 sucks the substrate W by an electrostatic suction type or a vacuum suction type.
  • the oxide film removing device 94 is a chemical solution supply device that supplies a chemical solution to the substrate.
  • the chemical solution nozzle 95 is configured to supply the chemical solution
  • the arm 96 is connected to the chemical solution nozzle 95, and the arm 96 is turned.
  • a rotating shaft 97 configured as described above.
  • the distance between the tip of the chemical nozzle 95 and the substrate W is preferably about 1 mm or more and about 10 mm or less. If this distance is less than 1 mm, the substrate and the chemical nozzle 95 may be in physical contact. If this distance exceeds 10 mm, there is a possibility that the chemical solution cannot be supplied locally.
  • the distance between the tip of the chemical solution nozzle 95 and the substrate is about 2 mm or more and about 5 mm. More preferably, it is as follows.
  • the oxide film removal apparatus 94 first turns the arm 96 in accordance with the diameter of the substrate W, and the chemical liquid nozzle. 95 is positioned above the edge of the substrate W. With the chemical nozzle 95 positioned above the edge portion of the substrate W, DIW is supplied from the DIW nozzle 93 to the substantially central portion of the rotating substrate W, and the chemical solution is ejected to the edge portion of the rotating substrate W. The chemical solution is supplied to the edge portion of the substrate W and flows toward the outer peripheral portion of the substrate W by receiving a centrifugal force by the rotation of the substrate W.
  • the oxide film removing apparatus 94 can locally supply the chemical solution to the edge portion of the substrate W.
  • the region other than the edge portion of the substrate W is not exposed to the chemical solution.
  • the rotary stage 91 rotates the substrate W, the chemical solution can be efficiently supplied over the entire periphery of the edge portion of the substrate W.
  • the chemical solution is supplied to the oxide film formed on the edge portion of the substrate W, the oxide film is dissolved and removed by the chemical solution. After supplying the chemical solution for a predetermined time, the supply of the chemical solution is stopped and the supply of DIW is continued. Thereby, the chemical solution supplied to the edge portion of the substrate W is washed away.
  • the edge portion of the substrate W is a region where the electrical contact 72 can contact as described above, or a portion where the substrate W contacts the seal member 70 when the substrate W is held by the substrate holder 60. This is a region on the peripheral edge side of W.
  • the chemical solution spot-wise to the substrate it is assumed in advance that a part of the chemical solution may scatter, and the chemical component / concentration that does not adversely affect the resist pattern is used.
  • the oxide film in the peripheral portion of the edge portion may be dissolved and removed by the chemical solution 28.
  • the sponge chemical cleaning apparatus 90 can locally remove particles present on the edge portion of the substrate W by the sponge cleaning portion 84 while removing the oxide film at the edge portion of the substrate W by the oxide film removing device 94. it can. Also in this embodiment, in order to measure whether or not contaminants are present in the edge portion of the substrate, light in the ultraviolet region (200 nm to 380 nm) from above the edge portion is applied to the edge portion of the substrate W.
  • a sensor configured to irradiate 365 nm as excitation light and measure the absorbance at the edge portion, or a sensor for irradiating light in the fluorescent region and monitoring the intensity of the reflected light (fluorescence)
  • a reflective film thickness meter may be provided in the sponge chemical cleaning device 90 (not shown).
  • the plating unit control unit will sufficiently contain contaminants (including organic matter and oxide films) at the edge. It is configured to be able to determine whether or not it has been removed.
  • the substrate W can be rotated with the sensor positioned above the edge portion of the substrate W during or after cleaning the edge portion, and it can be determined whether or not contaminants are present in the edge portion.
  • the plating process is performed on the substrate in which the contaminant does not remain in the edge portion. Therefore, it is possible to prevent deterioration of the in-plane uniformity of the plating film thickness of the substrate W caused by variations in the contact resistance of the electrical contacts of the substrate holder 60.
  • the end point of the cleaning is determined based on the determination result of this sensor.
  • the presence / absence of the substrate W having an abnormality in the edge portion can be determined based on the measurement result of the sensor.
  • FIG. 19 is a flowchart showing a plating method according to the fifth embodiment.
  • the plating method according to the fifth embodiment includes step S901 in addition to the plating method shown in FIG. 7 according to the first embodiment. Description of the same part as the plating method of FIG. 7 is partially omitted.
  • step S603 the organic substance desorbing device 45 (see FIGS. 4 to 6) included in the aligner 40 desorbs organic substances present at the edge portion of the substrate W.
  • the substrate W is transferred to the sponge chemical cleaning device 90 by the substrate transfer device 122.
  • the edge of the substrate W is cleaned (step S901). Specifically, in the sponge chemical cleaning apparatus 90, particles and oxide films present on the edge portion of the substrate W are removed. Although not shown in FIG. 19, in order to determine the presence or absence of organic substances, oxide films, particles, etc. at the edge portion of the substrate W where the edge portion has been cleaned, contaminants are present at the edge portion. You may make it determine whether it exists.
  • the substrate W on which the edge portion has been cleaned is transported to the fixing unit 120 by the substrate transport device 122 and set on the substrate holder 60 (step S604). At this time, the electrical contact of the substrate holder 60 contacts the edge portion of the cleaned substrate W. Thereby, the dispersion
  • the substrate W set in the substrate holder 60 is processed in the subsequent steps S605 to S609.
  • the fifth embodiment before the substrate holder 60 is set, organic substances, oxide films, and particles present on the edge portion of the substrate W can be locally removed. Therefore, variations in the contact resistance of the electrical contacts 72 of the substrate holder 60 caused by organic substances, oxide films, and particles present on the edge portion of the substrate W can be suppressed, and deterioration of the uniformity of the plating film thickness can be prevented. .
  • FIG. 20 is an overall layout diagram of the plating apparatus according to the sixth embodiment.
  • the plating apparatus according to the sixth embodiment is significantly different from the plating apparatuses according to the first to fifth embodiments in that the plating apparatus is configured to perform plating on a rectangular (rectangular) substrate.
  • the plating apparatus is configured to perform plating on a rectangular (rectangular) substrate.
  • the plating apparatus of the sixth embodiment includes a hoop 102, a fixing unit 120, and a substrate transfer device 122.
  • the fixing unit 120 includes an organic substance detaching device that locally detaches organic substances present at the edge of the rectangular substrate before being set on the substrate holder 60.
  • a substrate holder 60 that can hold a rectangular substrate is used.
  • the fixing unit 120 is configured to hold the rectangular substrate on the substrate holder 60 after locally detaching the organic substance existing at the edge portion of the rectangular substrate with the organic material detaching apparatus.
  • the plating apparatus further includes a stocker 124, a pre-wet tank 126, an activation tank 129, a blow tank 132, and a plating tank 10.
  • the activation tank 129 the surface of the substrate after pre-wetting is activated by washing with an acid or the like.
  • the stocker 124, the pre-wet tank 126, the activation tank 129, the blow tank 132, and the plating tank 10 are arranged in this order.
  • the plating apparatus has a cleaning / drying apparatus 135 for cleaning and drying the plated rectangular substrate.
  • FIG. 21 is a flowchart showing the plating method according to the sixth embodiment.
  • a resist pattern is formed on a rectangular substrate before the rectangular substrate is conveyed to the plating apparatus shown in FIG. 20 (step S2101).
  • the rectangular substrate on which the resist pattern is formed is irradiated with UV, the resist residue on the surface of the rectangular substrate is removed (ashing treatment), and the resist surface is hydrophilized (discum treatment) (step S2102).
  • the processes in steps S2101 and S2102 are performed in an arbitrary apparatus other than the plating apparatus shown in FIG.
  • the rectangular substrate is transferred from the FOUP 102 containing the rectangular substrate to the fixing unit 120 by the substrate transfer device 122.
  • the edge portion of the rectangular substrate is cleaned (step S2103). Specifically, in the fixing unit 120, UV or plasma is locally applied to the edge portion of the rectangular substrate by the organic substance detaching apparatus, and the organic substance is desorbed.
  • a sensor (not shown) is provided in the fixing unit 120, it is locally removed by applying UV or plasma to organic substances present at the edge of the rectangular substrate. After that, the presence or absence of contaminants (including organic substances) in the edge portion can be confirmed.
  • a sensor spectrophotometer or fluorescent reflection film thickness meter
  • a sensor is positioned above the surface of a rectangular substrate disposed in the organic substance detachment apparatus provided in the fixing unit 120.
  • the rectangular substrate surface has an edge portion that has been subjected to UV or plasma treatment and a plated surface that has not been subjected to UV or plasma treatment, and the seed layer is the entire surface of the rectangular substrate surface (the plated surface and the edge). Part). And by making a sensor scan a to-be-plated surface and an edge part, the light absorbency or fluorescence intensity of both a to-be-plated surface and an edge part can be measured.
  • a control unit (not shown) of the plating apparatus for example, compares the absorbance of both the surface to be plated and the edge portion.
  • the ratio of the absorbance of the edge portion to the absorbance of the surface to be plated has a preset threshold value (for example, 50% It is possible to determine whether or not the contaminants (including organic matter and oxide film) at the edge portion have been sufficiently removed. When the value of the ratio is larger than the threshold value, it can be determined that the contaminants (including organic substances and oxide film) at the edge portion are not sufficiently removed. When the value of the ratio is not larger than the threshold value, it can be determined that the contaminants (including organic substances and oxide film) at the edge are sufficiently removed. Similarly, when the fluorescence intensity is measured, it is possible to determine whether or not the contaminants at the edge portion are sufficiently removed by comparing the predetermined threshold value with the measured value.
  • a preset threshold value for example, 50% It is possible to determine whether or not the contaminants (including organic matter and oxide film) at the edge portion have been sufficiently removed. When the value of the ratio is larger than the threshold value, it can be determined that the contaminants (including organic substances and oxide film) at the edge portion are not sufficiently removed. When the value
  • the step of locally radiating UV or plasma to the edge portion of the rectangular substrate may be repeatedly performed.
  • the removal of the organic matter has been completed, and is transferred to each processing tank by the substrate holder transfer device 140, and a series of plating processes is performed. Is done. In this way, it is determined whether or not contaminants are present on the edge portion of the rectangular substrate before the plating process, and thereafter, the rectangular substrate having no contaminants remaining on the edge portion is subjected to the plating process.
  • deterioration of the in-plane uniformity of the plating film thickness of the rectangular substrate due to variations in the contact resistance of the electrical contacts of the substrate holder 60 can be more reliably prevented.
  • the rectangular substrate whose edge has been cleaned is set on the substrate holder 60 by the fixing unit 120 (step S2104).
  • the electrical contact of the substrate holder 60 comes into contact with the edge portion of the cleaned rectangular substrate.
  • substrate holder 60 resulting from adhesion of organic substance can be reduced.
  • the rectangular substrate held by the substrate holder 60 is first transported to the pre-wet bath 126 by the substrate holder transport device 140, and the substrate W is immersed in pure water stored in the pre-wet bath 126 (step S2105). Subsequently, the rectangular substrate is transferred to the activation tank 129, and the surface of the substrate W is activated (step S2106).
  • the rectangular substrate is immersed in one of the plating cells 134 of the plating tank 10 and subjected to a plating process (step S2107).
  • the rectangular substrate having the plating film formed on the surface is blow-dried in the blow tank 132 (step S2108).
  • the rectangular substrate held by the substrate holder 60 is transported to the fixing unit 120, and the rectangular substrate is removed from the substrate holder 60.
  • the substrate transfer device 122 receives the rectangular substrate from the fixing unit 120 and transfers the rectangular substrate to the cleaning / drying device 135.
  • the surface of the rectangular substrate is cleaned and dried in the cleaning / drying apparatus 135 (step S2109).
  • FIG. 22 is a schematic side view of an example of the organic substance detachment apparatus 50 provided in the fixing unit 120.
  • the organic substance detachment apparatus 50 constitutes a UV irradiation apparatus or a plasma emission apparatus.
  • the organic substance detaching apparatus 50 includes a substrate support base 55 (corresponding to an example of a rotation mechanism), a first actuator 53 (corresponding to an example of an actuator), and a second actuator 52 (actuator of the actuator). Equivalent to an example), a head unit 51, and a control unit 54.
  • the substrate support 55 is configured to suck the back surface of the rectangular substrate S1, and rotates the rectangular substrate S1 in the circumferential direction.
  • substrate support stand 55 adsorb
  • the head unit 51 is configured such that UV or plasma can be locally applied to the edge of the rectangular substrate S1 from above the rectangular substrate S1 disposed on the substrate support base 55. That is, when the head unit 51 is configured to irradiate UV, the organic matter detachment apparatus 50 constitutes a UV irradiation device, and when the head unit 51 is configured to radiate plasma, organic matter detachment is performed.
  • the apparatus 50 constitutes a plasma irradiation apparatus.
  • the organic substance detachment apparatus 50 can locally apply UV or plasma to the edge portion of the rectangular substrate S1 before being held by the substrate holder 60. In other words, the region other than the edge portion of the rectangular substrate S1 is not exposed to UV or plasma.
  • the first actuator 53 and the second actuator 52 can move the head portion 51 in the horizontal direction. Specifically, the first actuator 53 can move the head portion 51 in a first direction that is horizontal and linear, and the second actuator 52 moves in a second direction that is orthogonal to the first direction. Can be made. In the illustrated example, the head unit 51 can be moved along the edge of the rectangular substrate S1 by the first actuator 53, and from the end of the rectangular substrate S1 to the UV or plasma application position by the second actuator 52. The distance d2 can be adjusted.
  • the distance d2 is about 5 mm or less, more preferably about 5 mm, so that UV or plasma is applied to a region on the outer peripheral side with respect to the portion where the lip portion 70a of the sealing member 70 of the substrate holder 60 contacts.
  • the position of the head part 51 is adjusted to be 2 mm or less.
  • the first direction or the second direction means not a single direction but a bidirectional direction such as a positive direction and a negative direction of the X axis.
  • the head unit 51 is configured to be movable in the vertical direction by an elevator mechanism (not shown).
  • the distance d1 between the UV irradiation source or plasma radiation port of the head unit 51 and the rectangular substrate S1 is preferably about 1 mm or more and about 10 mm or less. If this distance is less than 1 mm, there is a possibility that the rectangular substrate S1 and the UV irradiation source or the plasma emission port are in physical contact. Further, if the distance d1 exceeds 10 mm, there is a possibility that UV or plasma cannot be irradiated locally. This distance d1 should be about 2 mm or more and about 5 mm or less so that the rectangular substrate and the UV irradiation source or the plasma emission port can be irradiated locally without further reliable physical contact. Is more preferable.
  • the organic substance detaching apparatus 50 further includes a head unit 51, a first actuator 53, a second actuator, and a control unit 54 for controlling a lifting mechanism (not shown). Further, as shown in FIG. 22, the organic substance detachment apparatus 50 has a UV on the center side of the rectangular substrate S1 of the head portion 51 so that UV or plasma emitted by the head portion 51 does not diffuse to the center side of the rectangular substrate S1. Alternatively, a mask 57 for shielding plasma may be provided.
  • FIG. 23A to FIG. 23E are plan views of the organic substance detaching apparatus 50 showing a process of detaching organic substances at the edge portion of the rectangular substrate S1 with the organic substance detaching apparatus 50 shown in FIG.
  • the organic substance detaching apparatus 50 aligns the head unit 51 in the vertical direction by a lifting mechanism (not shown), and the second actuator 52 moves the position of the head unit 51 to the rectangular substrate S1. Align with one of the four edges.
  • the control unit 54 of the organic substance detachment apparatus 50 controls the head unit 51 and the first actuator 53, and emits UV or plasma from the head unit 51, while the edge part of the rectangular substrate S ⁇ b> 1 is formed by the first actuator 53.
  • the head portion 51 is moved along the surface to clean one of the edge portions.
  • the organic substance detaching apparatus 50 rotates the substrate support base 55 (see FIG. 22) to rotate the rectangular substrate S1 by 90 degrees as shown in FIG. 23B.
  • the control unit 54 controls the head unit 51 and the substrate support 55 so that the substrate support 55 is rotated after the emission of UV or plasma from the head 51 is stopped.
  • the head unit 51 and the substrate support 55 are controlled so that the radiation of UV or plasma from the head unit 51 and the rotation of the rectangular substrate S1 by the substrate support 55 are not performed simultaneously. Thereby, it is possible to prevent UV or plasma from being radiated to an unintended region on the rectangular substrate S1.
  • the organic substance detachment apparatus 50 aligns the head portion 51 with the edge portion of the rectangular substrate S1 by the second actuator 52 while stopping the emission of UV or plasma.
  • the second actuator 52 since the second actuator 52 is provided, even if the rectangular substrate S1 has a long side and a short side as shown in FIGS. 23A to 23E, the head portion 51 is placed on the edge portion of the rectangular substrate S1. Can be aligned.
  • the organic substance detachment apparatus 50 moves the head part 51 along the edge part of the rectangular substrate S1 by the first actuator 53 while radiating UV or plasma from the head part 51, and performs another one of the edge parts. Wash one.
  • the organic substance detaching apparatus 50 rotates the rectangular substrate S1 by 90 degrees to clean each edge portion.
  • the organic substance detaching apparatus 50 When the cleaning of the four edge portions of the rectangular substrate S1 is completed, the organic substance detaching apparatus 50 further rotates the rectangular substrate S1 by 90 degrees to return the rectangular substrate S1 to the same position (home position) as FIG. 23A ( FIG. 23E). As described above, the edge portions on the four sides of the rectangular substrate S1 are cleaned.
  • a set of the first actuator 53, the second actuator 52, and the head unit 51 is provided, but a plurality of sets may be provided. In that case, the time required for cleaning the edge portion can be reduced.
  • FIG. 24 is a schematic side view of another example of the organic substance detachment apparatus 50 provided in the fixing unit 120.
  • the organic substance detachment apparatus 50 shown in FIG. 24 is configured so that the substrate support base 55 does not rotate, unlike the organic substance detachment apparatus 50 shown in FIG. Instead, the organic substance detaching apparatus 50 shown in FIG. 24 has a turning shaft 56 that turns the head portion 51, the first actuator 53, and the second actuator 52.
  • the pivot axis 56 is positioned so that its central axis passes through the approximate center of the rectangular substrate S1.
  • the head 51, the first actuator 53, and the second actuator 52 pivot directly or indirectly so that the head 51 can be positioned above the edge of the rectangular substrate S1.
  • the control unit 54 controls driving of the turning shaft 56 in addition to the head unit 51, the first actuator 53, and the second actuator 52.
  • 25A to 25E are plan views of the organic matter detachment apparatus 50 showing a process of detaching organic substances at the edge portion of the rectangular substrate S1 by the organic matter detachment apparatus 50 shown in FIG.
  • the organic substance detaching apparatus 50 aligns the head unit 51 in the vertical direction by a lifting mechanism (not shown), and moves the position of the head unit 51 by the turning shaft 56 and the second actuator 52. Align with one of the four edge portions of the rectangular substrate S1.
  • the control unit 54 of the organic substance detachment apparatus 50 controls the head unit 51 and the first actuator 53, and emits UV or plasma from the head unit 51, while the edge part of the rectangular substrate S ⁇ b> 1 is formed by the first actuator 53.
  • the head portion 51 is moved along the surface to clean one of the edge portions.
  • the organic substance detaching apparatus 50 rotates the turning shaft 56 to turn the head portion 51 by 90 degrees as shown in FIG. 25B.
  • the control unit 54 controls the head unit 51 and the turning shaft 56 so as to turn the head unit 51 after stopping the emission of UV or plasma from the head unit 51.
  • the head unit 51 and the turning shaft 56 are controlled so that the UV or plasma emission from the head unit 51 and the turning of the head unit 51 by the turning shaft 56 are not performed simultaneously. Thereby, it is possible to prevent UV or plasma from being radiated to an unintended region on the rectangular substrate S1.
  • the organic substance detachment apparatus 50 aligns the head part 51 with the edge part of the rectangular substrate S1 by the second actuator 52 while stopping the emission of UV or plasma. Subsequently, the organic substance detachment apparatus 50 moves the head part 51 along the edge part of the rectangular substrate S1 by the first actuator 53 while radiating UV or plasma from the head part 51, and performs another one of the edge parts. Wash one. Similarly, as shown in FIGS. 25C and 25D, every time one of the edge portions is cleaned, the organic substance detaching apparatus 50 turns the head portion 51 about the turning shaft 56 by 90 degrees, Wash.
  • the organic substance detaching apparatus 50 When the cleaning of the edge portions on the four sides of the rectangular substrate S1 is completed, the organic substance detaching apparatus 50 further turns the head portion 51 by 90 degrees to return the head portion to the same position (home position) as FIG. 25E). As described above, the edge portions on the four sides of the rectangular substrate S1 are cleaned.
  • the organic substance detachment apparatus 50 shown in FIGS. 24 to 25E has a set of turning shafts 56, a first actuator 53, a second actuator 52, and a head unit 51. Also good. In that case, the time required for cleaning the edge portion can be reduced.
  • FIG. 26 is a schematic side view of another example of the organic substance detachment apparatus 50 provided in the fixing unit 120. 26 differs from the organic matter detachment apparatus 50 shown in FIG. 22 in that two head units are provided. That is, the organic substance detachment apparatus 50 includes a first head part 51a, a second head part 51b, and two second actuators 52a and 52b corresponding to the first head part 51a and the second head part 51b. As shown in FIG. 26, the first head portion 51a and the second head portion 51b are provided at positions facing each other with the first actuator 53 interposed therebetween. Accordingly, the first head portion 51a and the second head portion can reciprocate in the same direction by the second actuators 52a and 52b.
  • FIGS. 27A to 27C are plan views of the organic substance detaching apparatus 50 showing a process of detaching organic substances at the edge portion of the rectangular substrate S1 with the organic substance detaching apparatus 50 shown in FIG.
  • the organic substance detaching apparatus 50 aligns the head portion 51 in the vertical direction by a lifting mechanism (not shown), and the first head portion 51a and the second head portion 52b by the second actuators 52a and 52b.
  • the position of the head portion 51b is aligned with two of the four edge portions of the rectangular substrate S1 that face each other.
  • control unit 54 of the organic matter detachment apparatus 50 controls the first head unit 51a, the second head unit 51b, and the first actuator 53, and performs UV or plasma from the first head unit 51a and the second head unit 51b.
  • the first actuator 53 moves the first head portion 51a and the second head portion 51b along the edge portion of the rectangular substrate S1 to clean the two opposing edge portions.
  • the organic substance detachment apparatus 50 rotates the substrate support base 55 (see FIG. 26) to rotate the rectangular substrate S1 by 90 degrees as shown in FIG. 27B.
  • the control unit 54 stops the radiation of UV or plasma from the first head unit 51a and the second head unit 51b, and then rotates the substrate support base 55 so that the first head unit 51a and the second head unit 51 are rotated.
  • the head unit 51b and the substrate support base 55 are controlled. Thereby, it is possible to prevent UV or plasma from being radiated to an unintended region on the rectangular substrate S1.
  • the organic substance detachment apparatus 50 opposes the first head part 51a and the second head part 51b to the rectangular substrate S1 by the second actuators 52a and 52b while stopping the emission of UV or plasma. Align with the two edges. Subsequently, the organic substance detachment apparatus 50 radiates UV or plasma from the first head part 51a and the second head part 51b, and the first head part 51a and the second head part 51b along the edge part of the rectangular substrate S1 by the first actuator 53. The second head portion 51b is moved to clean the two opposing edge portions.
  • the organic substance detaching apparatus 50 When the cleaning of the edge portions of the four sides of the rectangular substrate S1 is completed, the organic substance detaching apparatus 50 further rotates the rectangular substrate S1 by 270 degrees to return the rectangular substrate S1 to the same position (home position) as FIG. 27A ( FIG. 27C). As described above, the edge portions on the four sides of the rectangular substrate S1 are cleaned.
  • the organic substance detachment apparatus 50 shown in FIGS. 26 and 27A-27C includes a first head part 51a and a second head part 51b. For this reason, the time for irradiating the rectangular substrate S1 with UV or plasma and the time for rotating the rectangular substrate S1 can be reduced as compared with the organic substance detachment apparatus 50 shown in FIGS. 22 and 23A-23E.
  • the organic substance detaching apparatus 50 shown in FIGS. 26 to 27C includes a pair of first actuator 53, second actuators 52a and 52b, a first head portion 51a, and a second head portion 51b. A plurality of these may be provided. In that case, the time required for cleaning the edge portion can be reduced.
  • FIG. 28 is a schematic side view of another example of the organic substance detaching apparatus 50 provided in the fixing unit 120.
  • the organic substance detaching apparatus 50 shown in FIG. 28 two head units are provided unlike the organic substance detaching apparatus 50 shown in FIG. That is, the organic substance detachment apparatus 50 includes a first head part 51a, a second head part 51b, and two second actuators 52a and 52b corresponding to the first head part 51a and the second head part 51b.
  • the first head portion 51a and the second head portion 51b are provided at positions facing each other with the first actuator 53 interposed therebetween. Accordingly, the first head portion 51a and the second head portion 51b can reciprocate in the same direction by the second actuators 52a and 52b.
  • FIGS. 29A to 29C are plan views of the organic substance detaching apparatus 50 showing a process of detaching organic substances from the edge portion of the rectangular substrate S1 by the organic substance detaching apparatus 50 shown in FIG.
  • the organic substance detaching apparatus 50 aligns the first head part 51a and the second head part 51b in the vertical direction by an elevating mechanism (not shown), and the turning shaft 56 and the second actuator 52a. , 52b align the positions of the first head portion 51a and the second head portion 51b with the two opposing edge portions of the rectangular substrate S1.
  • control unit 54 of the organic matter detachment apparatus 50 controls the first head unit 51a, the second head unit 51b, and the first actuator 53, and performs UV or plasma from the first head unit 51a and the second head unit 51b.
  • the first actuator 53 moves the first head portion 51a and the second head portion 51b along the edge portion of the rectangular substrate S1, and cleans one of the edge portions.
  • the organic substance detaching apparatus 50 rotates the turning shaft 56 to turn the first head portion 51a and the second head portion 51b by 90 degrees as shown in FIG. 29B.
  • the control unit 54 stops the radiation of UV or plasma from the first head unit 51a and the second head unit 51b, and then turns the first head unit 51a and the second head unit 51b.
  • the head unit 51a, the second head unit 51b, and the turning shaft 56 are controlled. Thereby, it is possible to prevent UV or plasma from being radiated to an unintended region on the rectangular substrate S1.
  • the organic substance detachment apparatus 50 moves the first head part 51a and the second head part 51b to the edge of the rectangular substrate S1 by the second actuators 52a and 52b while stopping the emission of UV or plasma. Align with the part. Subsequently, the organic substance detachment apparatus 50 radiates UV or plasma from the first head part 51a and the second head part 51b, and the first head part 51a and the second head part 51b along the edge part of the rectangular substrate S1 by the first actuator 53. The second head portion 51b is moved to clean the two opposing edge portions.
  • the organic substance detaching apparatus 50 When the cleaning of the edge portions on the four sides of the rectangular substrate S1 is completed, the organic substance detaching apparatus 50 further rotates the first head portion 51a and the second head portion 51b by 270 degrees to thereby form the first head portion 51a and the second head.
  • the part 51b is returned to the same position (home position) as FIG. 29A (FIG. 29C). As described above, the edge portions on the four sides of the rectangular substrate S1 are cleaned.
  • the organic substance detaching apparatus 50 shown in FIGS. 28 and 29A-29C includes a first head part 51a and a second head part 51b.
  • the time for irradiating the rectangular substrate S1 with UV or plasma and the time for rotating the head portion can be reduced as compared with the organic substance detachment apparatus 50 shown in FIGS. 24 and 25A-25E.
  • the organic substance detaching apparatus 50 shown in FIGS. 28 to 29C includes a pair of turning shafts 56, a first actuator 53, second actuators 52a and 52b, a first head portion 51a, and a second head portion 51b.
  • a plurality of sets of these may be provided. In that case, the time required for cleaning the edge portion can be reduced.
  • the UV light source can emit, for example, a high pressure mercury lamp, a low pressure mercury lamp, a black light, or light in the UV region.
  • a laser light source or the like can be employed.
  • High-pressure mercury lamps, low-pressure mercury lamps, and black lights tend to diverge light, so when using these light sources, install the light source near the substrate W or use only an optical system at the edge. It is preferable to irradiate UV.
  • the organic substance detachment device 50 is a plasma radiation device, for example, an atmospheric remote plasma device or the like can be employed.
  • the organic substance detachment apparatus 50 has been described as being provided in the fixing unit 120.
  • the organic substance detachment apparatus 50 is not limited thereto, and may be provided in another unit, or may be provided as a separate independent apparatus in the plating apparatus. It may be provided.
  • desorption apparatus 50 shall wash
  • the mask 57 shown in FIG. 22 can also be employed in the other organic substance detachment apparatus 50 shown in FIGS. 24 to 29C.

Abstract

The present invention prevents degradation of uniformity of the thickness of a plating film due to organic material adhering to an edge section of a substrate and/or an oxide film formed on the edge section of the substrate. A plating apparatus for plating a substrate is provided. This plating apparatus has a plating bath for applying a voltage to a substrate set in a substrate holder and plating the substrate, and an edge section washing device for locally removing an organic material and/or an oxide film present on an edge section of the substrate before the substrate is set in the substrate holder.

Description

めっき装置及びめっき方法Plating apparatus and plating method
　本発明は、めっき装置及びめっき方法に関する。 The present invention relates to a plating apparatus and a plating method.
　従来、半導体ウェハ等の表面に設けられた微細な配線用溝、ホール、又はレジスト開口部に配線を形成したり、半導体ウェハ等の表面にパッケージの電極等と電気的に接続するバンプ（突起状電極）を形成したりすることが行われている。この配線及びバンプを形成する方法として、例えば、電解めっき法、蒸着法、印刷法、ボールバンプ法等が知られているが、半導体チップのＩ／Ｏ数の増加、細ピッチ化に伴い、微細化が可能で性能が比較的安定している電解めっき法が多く用いられるようになってきている。 Conventionally, bumps (protruding shapes) that form wiring in fine wiring grooves, holes, or resist openings provided on the surface of a semiconductor wafer, etc., or are electrically connected to the surface of a semiconductor wafer or the like with package electrodes, etc. Forming an electrode). As a method for forming the wiring and bumps, for example, an electrolytic plating method, a vapor deposition method, a printing method, a ball bump method and the like are known. However, as the number of I / Os of a semiconductor chip increases and the pitch becomes finer, Electroplating methods that can be made to be stable and have relatively stable performance have been increasingly used.
　電解めっき法で基板にめっきをするには、予め、シード層が形成された半導体ウェハ等の基板にレジストパターンを形成しておく。続いて、レジストパターンが形成された基板に紫外光（以下、ＵＶ又はＵｌｔｒａ　Ｖｉｏｌｅｔという）の照射等を行い、基板表面上のレジスト残渣を除去し（アッシング処理）且つレジスト表面の親水化処理（ディスカム処理）を行う。 In order to plate a substrate by the electrolytic plating method, a resist pattern is previously formed on a substrate such as a semiconductor wafer on which a seed layer is formed. Subsequently, the substrate on which the resist pattern is formed is irradiated with ultraviolet light (hereinafter referred to as UV or Ultra Violet) to remove the resist residue on the substrate surface (ashing treatment) and to make the resist surface hydrophilic (discum) Process).
　アッシング処理及びディスカム処理が行われた基板は、めっき装置に搬送され、基板ホルダに保持される。基板ホルダは、基板に給電するための電気接点を有する。基板ホルダの電気接点は、基板ホルダに基板が保持されたときにレジストが塗布されていない基板のエッジ部上のシード層に接触するように構成される。このような基板ホルダは、例えば特許文献１に開示されている。基板ホルダに保持された基板はめっき液に浸漬され、アノードと基板との間に電圧が印加されることにより、基板表面にめっき膜が形成される。 The substrate that has been subjected to the ashing process and the discum process is transported to the plating apparatus and held on the substrate holder. The substrate holder has an electrical contact for supplying power to the substrate. The electrical contacts of the substrate holder are configured to contact the seed layer on the edge of the substrate that is not coated with resist when the substrate is held on the substrate holder. Such a substrate holder is disclosed in Patent Document 1, for example. The substrate held by the substrate holder is immersed in a plating solution, and a voltage is applied between the anode and the substrate to form a plating film on the substrate surface.
特開２００２－３６３７９４号公報JP 2002-363794 A
　従来のめっき方法においては、アッシング処理及びディスカム処理が行われた後、直ちにめっき処理が行われるわけではない。即ち、アッシング処理及びディスカム処理が行われてから所定の時間が経過した後に、基板が基板ホルダに保持される。このとき、アッシング処理及びディスカム処理からの時間経過によって、基板のエッジ部上のシード層に酸化膜が形成されたり、レジストから揮発した有機物が付着したりすることがある。基板の電気接点が接触することになる基板のエッジ部上のシード層に酸化膜が形成されたり、有機物が付着したりすると、基板ホルダの電気接点の接触抵抗にバラつきが生じ、めっき膜厚の均一性が悪化するという問題がある。 In the conventional plating method, the plating process is not performed immediately after the ashing process and the discum process. That is, the substrate is held by the substrate holder after a predetermined time has elapsed since the ashing process and the discaming process. At this time, an oxide film may be formed on the seed layer on the edge portion of the substrate or an organic substance volatilized from the resist may be attached as time elapses from the ashing process and the discaming process. If an oxide film is formed on the seed layer on the edge of the substrate where the electrical contacts of the substrate come into contact, or if organic substances adhere, the contact resistance of the electrical contacts of the substrate holder will vary, and the plating film thickness There is a problem that uniformity is deteriorated.
　本発明は上記問題に鑑みてなされたものであり、その目的の一つは、基板のエッジ部に形成される酸化膜及び基板のエッジ部に付着する有機物の少なくともいずれか１つを原因とするめっき膜厚の均一性の悪化を防止することである。 The present invention has been made in view of the above problems, and one of its purposes is caused by at least one of an oxide film formed on the edge portion of the substrate and an organic substance adhering to the edge portion of the substrate. This is to prevent the deterioration of the uniformity of the plating film thickness.
　本発明の一形態によれば、基板にめっきを行うめっき装置が提供される。このめっき装置は、前記基板のエッジ部に存在する有機物及び酸化膜の少なくともいずれか１つを局所的に除去するエッジ部洗浄装置と、めっき液を収容し、基板とアノードとを該めっき液に浸漬させた状態で該基板と該アノード間に電圧を印加してめっきを行うためのめっき槽と、を有する。 According to one aspect of the present invention, a plating apparatus for plating a substrate is provided. The plating apparatus includes an edge cleaning apparatus that locally removes at least one of an organic substance and an oxide film present on the edge of the substrate, a plating solution, and the substrate and the anode in the plating solution. A plating tank for performing plating by applying a voltage between the substrate and the anode in the immersed state.
　この一形態によれば、基板ホルダにセットされる前に、基板のエッジ部に存在する有機物及び酸化膜の少なくともいずれか１つを局所的に除去することができる。したがって、基板のエッジ部以外の表面に形成されたレジストパターンに悪影響を与えることなく、基板のエッジ部に存在する有機物及び酸化膜の少なくともいずれか１つによる基板ホルダの電気接点の接触抵抗のバラつきを抑制し、めっき膜厚の均一性の悪化を防止することができる。 According to this embodiment, before being set on the substrate holder, at least one of the organic substance and the oxide film present on the edge portion of the substrate can be locally removed. Therefore, the contact resistance of the electrical contact of the substrate holder varies due to at least one of the organic substance and the oxide film present on the edge of the substrate without adversely affecting the resist pattern formed on the surface other than the edge of the substrate. And the deterioration of the uniformity of the plating film thickness can be prevented.
　本発明の一形態において、前記エッジ部洗浄装置は、前記基板のエッジ部に存在する有機物を局所的に脱離する有機物脱離装置を含み、前記有機物脱離装置は、回転する前記基板のエッジ部にＵＶを照射するＵＶ照射装置又は回転する前記基板のエッジ部にプラズマを放射するプラズマ放射装置を含む。 In one form of this invention, the said edge part cleaning apparatus contains the organic substance detachment | desorption apparatus which locally detach | desorbs the organic substance which exists in the edge part of the said board | substrate, The said organic substance detachment apparatus is the edge of the said board | substrate to rotate. A UV irradiation apparatus that irradiates the part with UV or a plasma emission apparatus that emits plasma to the edge portion of the rotating substrate.
　一般的に、めっきされる基板上にはレジストが塗布されており、このレジストにＵＶ又はプラズマを放射すると、レジストが変性し、ダメージを受ける恐れがある。この一形態によれば、基板のエッジ部に局所的にＵＶ又はプラズマを放射することができる。これにより、基板のエッジ部以外の表面、即ち基板上のレジストが塗布されている部分にはＵＶ又はプラズマを放射することがないので、基板上のレジストにダメージを与えることなく、基板のエッジ部の有機物を脱離させることができる。 Generally, a resist is coated on a substrate to be plated. If UV or plasma is radiated to the resist, the resist may be modified and damaged. According to this embodiment, UV or plasma can be locally emitted to the edge portion of the substrate. Thereby, UV or plasma is not emitted to the surface other than the edge portion of the substrate, that is, the portion where the resist is applied on the substrate, so that the edge portion of the substrate is not damaged without damaging the resist on the substrate. The organic matter can be eliminated.
　本発明の一形態において、めっき装置は、前記基板を回転させて前記基板の向きを整列するアライナを有し、前記有機物脱離装置は、前記アライナに設けられる。 In one embodiment of the present invention, the plating apparatus includes an aligner that rotates the substrate to align the orientation of the substrate, and the organic substance detachment device is provided in the aligner.
　この一形態によれば、有機物脱離装置がアライナに設けられるので、アライナにより基板を回転させつつ、ＵＶ照射装置又はプラズマ照射装置で基板のエッジ部を処理することができる。したがって、有機物脱離装置に基板を回転させる機構を設ける必要がないので、コストを低減することができる。また、有機物脱離装置をアライナに設けることで、めっき装置全体のフットプリントを低減することもできる。 According to this embodiment, since the organic substance desorbing device is provided in the aligner, the edge portion of the substrate can be processed by the UV irradiation device or the plasma irradiation device while rotating the substrate by the aligner. Therefore, it is not necessary to provide a mechanism for rotating the substrate in the organic substance detaching apparatus, so that the cost can be reduced. Moreover, the footprint of the whole plating apparatus can also be reduced by providing an organic substance detachment apparatus in the aligner.
　本発明の一形態において、前記ＵＶ照射装置又は前記プラズマ放射装置は、前記基板の上方から該基板のエッジ部に局所的にＵＶ又はプラズマを適用できる位置に配置される。 In one embodiment of the present invention, the UV irradiation device or the plasma radiation device is disposed at a position where UV or plasma can be locally applied to an edge portion of the substrate from above the substrate.
　本発明の一形態において、前記エッジ部洗浄装置は、前記基板のエッジ部に存在する酸化膜を局所的に除去する酸化膜除去装置を含み、前記酸化膜除去装置は、回転する前記基板のエッジ部に薬液を供給する薬液ノズルを備えた薬液洗浄装置を含む。 In one form of this invention, the said edge part cleaning apparatus contains the oxide film removal apparatus which removes locally the oxide film which exists in the edge part of the said board | substrate, The said oxide film removal apparatus is the edge of the said board | substrate which rotates. A chemical solution cleaning device including a chemical solution nozzle for supplying a chemical solution to the unit is included.
　一般的に、めっきされる基板上にはシード層が形成されており、このシード層に薬液が付着したまま放置すると、シード層が溶ける虞がある。このため、めっきされる基板のエッジ以外の部分、即ち、レジストパターンの開口から露出されるシード層に薬液が付着した場合、薬液が残らないように十分な洗浄が必要になる。この一形態によれば、基板のエッジ部に局所的に薬液を供給することができる。これにより、レジストパターンの開口から露出されるシード層に薬液を付着させることなく、基板のエッジ部に形成された酸化膜を除去することができる。したがって、基板の全面に薬液を付着させた場合に比べて、基板の洗浄時間を大幅に短縮することができる。 Generally, a seed layer is formed on a substrate to be plated. If the chemical solution is left on the seed layer, the seed layer may be dissolved. For this reason, when the chemical solution adheres to a portion other than the edge of the substrate to be plated, that is, the seed layer exposed from the opening of the resist pattern, sufficient cleaning is required so that the chemical solution does not remain. According to this embodiment, the chemical solution can be locally supplied to the edge portion of the substrate. Accordingly, the oxide film formed on the edge portion of the substrate can be removed without attaching a chemical solution to the seed layer exposed from the opening of the resist pattern. Therefore, the cleaning time of the substrate can be greatly reduced as compared with the case where the chemical solution is attached to the entire surface of the substrate.
　本発明の一形態において、前記薬液は、３ｗｔ％以上１５ｗｔ％以下の希硫酸又は２ｗｔ％以上２０ｗｔ％以下のクエン酸を含む。 In one embodiment of the present invention, the chemical solution contains 3 wt% or more and 15 wt% or less of dilute sulfuric acid or 2 wt% or more and 20 wt% or less of citric acid.
　薬液で基板のエッジ部の酸化膜を除去する際に、基板のエッジ部上のシード層が溶けないようにする必要がある。この一形態によれば、基板のエッジ部上のシード層を溶かすことなく、酸化膜を除去することができる。なお、希硫酸が３ｗｔ％未満又はクエン酸が２ｗｔ％未満であると、酸濃度が低すぎて、酸化膜を適切に除去することができない虞がある。また、希硫酸が１５ｗｔ％超又はクエン酸が２０ｗｔ％超であると、酸濃度が高すぎて、基板のエッジ部上のシード層を溶かしてしまう虞がある。 It is necessary to prevent the seed layer on the edge portion of the substrate from being dissolved when the oxide film on the edge portion of the substrate is removed with a chemical solution. According to this embodiment, the oxide film can be removed without dissolving the seed layer on the edge portion of the substrate. If the dilute sulfuric acid is less than 3 wt% or the citric acid is less than 2 wt%, the acid concentration may be too low to remove the oxide film properly. Further, if the diluted sulfuric acid exceeds 15 wt% or the citric acid exceeds 20 wt%, the acid concentration may be too high and the seed layer on the edge portion of the substrate may be dissolved.
　本発明の一形態において、めっき装置は、前記基板を回転させて、乾燥させるように構成されるスピンリンスドライヤを有し、前記酸化膜除去装置は、前記スピンリンスドライヤに設けられる。 In one embodiment of the present invention, the plating apparatus includes a spin rinse dryer configured to rotate and dry the substrate, and the oxide film removing apparatus is provided in the spin rinse dryer.
　この一形態によれば、酸化膜除去装置がスピンリンスドライヤに設けられるので、スピンリンスドライヤにより基板を回転させつつ、薬液洗浄装置で基板のエッジ部を処理することができる。また、スピンリンスドライヤは、一般的に、基板上の液体が飛散することを防止するカバーを有しているので、薬液洗浄装置が供給する薬液がスピンリンスドライヤの外部に飛散することも防止することができる。したがって、酸化膜除去装置に基板を回転させる機構及び薬液の飛散を防止するカバーを設ける必要がないので、コストを低減することができる。また、酸化膜除去装置をスピンリンスドライヤに設けることで、めっき装置全体のフットプリントを低減することもできる。 According to this embodiment, since the oxide film removing device is provided in the spin rinse dryer, the edge portion of the substrate can be processed by the chemical cleaning device while the substrate is rotated by the spin rinse dryer. Moreover, since the spin rinse dryer generally has a cover that prevents the liquid on the substrate from splashing, the chemical solution supplied by the chemical cleaning device is also prevented from splashing outside the spin rinse dryer. be able to. Therefore, it is not necessary to provide the oxide film removing apparatus with a mechanism for rotating the substrate and a cover for preventing the chemical solution from being scattered, so that the cost can be reduced. Moreover, the footprint of the whole plating apparatus can be reduced by providing the oxide film removing apparatus in the spin rinse dryer.
　本発明の一形態において、前記薬液洗浄装置は、前記基板の上方から該基板のエッジ部に局所的に薬液を供給できる位置に配置される。 In one embodiment of the present invention, the chemical solution cleaning device is disposed at a position where the chemical solution can be locally supplied to the edge portion of the substrate from above the substrate.
　本発明の一形態において、めっき装置は、前記基板のエッジ部に存在するパーティクルを除去するスポンジ洗浄装置を有する。 In one embodiment of the present invention, the plating apparatus includes a sponge cleaning apparatus that removes particles present on the edge portion of the substrate.
　この一形態によれば、基板ホルダの電気接点と基板のエッジ部上のシード層との間にパーティクルが挟み込まれることを防止することができ、パーティクルに起因する接触抵抗の悪化を抑制することができる。 According to this embodiment, it is possible to prevent particles from being sandwiched between the electrical contacts of the substrate holder and the seed layer on the edge portion of the substrate, and to suppress deterioration of contact resistance caused by the particles. it can.
　本発明の一形態において、めっき装置は、前記エッジ部に存在した有機物及び酸化膜の少なくともいずれか１つが局所的に除去された基板の前記エッジ部に光を照射するとともに、反射する光の強度又は吸光度を測定するように構成されたセンサを備える。 In one embodiment of the present invention, the plating apparatus irradiates light to the edge portion of the substrate from which at least one of the organic substance and the oxide film existing on the edge portion is locally removed, and reflects the intensity of the reflected light. Or a sensor configured to measure absorbance.
　この一形態によれば、反射する光の強度又は吸光度を測定することで、エッジ部に存在する有機物及び酸化膜の少なくともいずれか１つを局所的に除去した基板に対して、エッジ部の汚染物質が十分に除去されているか否かを判定することができる。これにより、基板のエッジ部に汚染物質が存在しているかいないかをめっき処理前に判定し、その後、エッジ部に汚染物質が残存していない基板についてめっき処理を行うようにすることができるので、基板ホルダが有する電気接点の接触抵抗のばらつきに起因する基板Ｗのめっき膜厚の面内均一性の悪化等を、より確実に防止できる。 According to this embodiment, by measuring the intensity or absorbance of the reflected light, contamination of the edge portion with respect to the substrate from which at least one of the organic matter and the oxide film existing on the edge portion has been locally removed is obtained. It can be determined whether the material has been sufficiently removed. As a result, it is possible to determine whether or not contaminants are present on the edge portion of the substrate before the plating process, and thereafter, the plating process can be performed on the substrate having no contaminants remaining on the edge portion. In addition, it is possible to more reliably prevent the deterioration of the in-plane uniformity of the plating film thickness of the substrate W caused by the variation in the contact resistance of the electrical contacts of the substrate holder.
　本発明の一形態によれば、基板にめっきを行うめっき方法が提供される。このめっき方法は、前記基板のエッジ部に存在する有機物及び酸化膜の少なくともいずれか１つを局所的に除去する除去工程と、前記基板を基板ホルダに保持する工程と、前記基板ホルダに保持された前記基板にめっき処理を行う工程と、を有する。 According to one aspect of the present invention, a plating method for plating a substrate is provided. The plating method includes a removal step of locally removing at least one of an organic substance and an oxide film present on an edge portion of the substrate, a step of holding the substrate on a substrate holder, and a holding on the substrate holder. And a step of plating the substrate.
　この一形態によれば、基板ホルダにセットされる前に、基板のエッジ部に存在する有機物及び酸化膜の少なくともいずれか１つを局所的に除去することができる。したがって、基板のエッジ部以外の表面に形成されたレジストパターンに悪影響を与えることなく、基板のエッジ部に存在する有機物及び酸化膜の少なくともいずれか１つによる基板ホルダの電気接点の接触抵抗のバラつきを抑制し、めっき膜厚の均一性の悪化を防止することができる。 According to this embodiment, before being set on the substrate holder, at least one of the organic substance and the oxide film present on the edge portion of the substrate can be locally removed. Therefore, the contact resistance of the electrical contact of the substrate holder varies due to at least one of the organic substance and the oxide film present on the edge of the substrate without adversely affecting the resist pattern formed on the surface other than the edge of the substrate. And the deterioration of the uniformity of the plating film thickness can be prevented.
　本発明の一形態において、めっき方法は、レジストパターンを前記基板に形成する工程と、前記レジストパターンをアッシングするアッシング工程と、を有し、前記除去工程は、前記アッシング工程の後に実行される。 In one embodiment of the present invention, the plating method includes a step of forming a resist pattern on the substrate and an ashing step of ashing the resist pattern, and the removing step is executed after the ashing step.
　この一形態によれば、アッシング工程の後に除去工程が行われるので、アッシング工程の後に所定時間が経過して、基板のエッジ部への有機物付着、及び酸化膜の形成の少なくともいずれか１つが生じたとしても、除去工程により基板のエッジ部に存在する有機物及び酸化膜の少なくともいずれか１つを局所的に除去することができる。 According to this aspect, since the removal step is performed after the ashing step, a predetermined time elapses after the ashing step, and at least one of adhesion of organic substances to the edge portion of the substrate and formation of an oxide film occurs. Even so, at least one of the organic substance and the oxide film present on the edge portion of the substrate can be locally removed by the removing step.
　本発明の一形態において、前記除去工程は、前記基板のエッジ部に局所的にＵＶ又はプラズマを放射する工程を含む。 In one embodiment of the present invention, the removing step includes a step of locally emitting UV or plasma to the edge portion of the substrate.
　一般的に、めっきされる基板上にはレジストが塗布されており、このレジストにＵＶ又はプラズマを放射すると、レジストが変性し、ダメージを受ける恐れがある。この一形態によれば、基板のエッジ部に局所的にＵＶ又はプラズマを放射することができる。これにより、基板のエッジ部以外の表面、即ち基板上のレジストが塗布されている部分にはＵＶ又はプラズマを放射することがないので、基板上のレジストにダメージを与えることなく、基板のエッジ部の有機物を脱離させることができる。 Generally, a resist is coated on a substrate to be plated. If UV or plasma is radiated to the resist, the resist may be modified and damaged. According to this embodiment, UV or plasma can be locally emitted to the edge portion of the substrate. Thereby, UV or plasma is not emitted to the surface other than the edge portion of the substrate, that is, the portion where the resist is applied on the substrate, so that the edge portion of the substrate is not damaged without damaging the resist on the substrate. The organic matter can be eliminated.
　本発明の一形態において、前記除去工程は、前記基板のエッジ部に局所的に薬液を供給する工程を含む。 In one embodiment of the present invention, the removing step includes a step of supplying a chemical solution locally to the edge portion of the substrate.
　一般的に、めっきされる基板上にはシード層が形成されており、このシード層に薬液が付着したまま放置すると、シード層が溶ける虞がある。このため、めっきされる基板のエッジ以外の部分、即ち、レジストパターンの開口から露出されるシード層に薬液が付着した場合、薬液が残らないように十分な洗浄が必要になる。この一形態によれば、基板のエッジ部に局所的に薬液を供給することができる。これにより、レジストパターンの開口から露出されるシード層に薬液を付着させることなく、基板のエッジ部に形成された酸化膜を除去することができる。したがって、基板の全面に薬液を付着させた場合に比べて、基板の洗浄時間を大幅に短縮することができる。 Generally, a seed layer is formed on a substrate to be plated. If the chemical solution is left on the seed layer, the seed layer may be dissolved. For this reason, when the chemical solution adheres to a portion other than the edge of the substrate to be plated, that is, the seed layer exposed from the opening of the resist pattern, sufficient cleaning is required so that the chemical solution does not remain. According to this embodiment, the chemical solution can be locally supplied to the edge portion of the substrate. Accordingly, the oxide film formed on the edge portion of the substrate can be removed without attaching a chemical solution to the seed layer exposed from the opening of the resist pattern. Therefore, the cleaning time of the substrate can be greatly reduced as compared with the case where the chemical solution is attached to the entire surface of the substrate.
　本発明の一形態において、前記薬液は、３ｗｔ％以上１５ｗｔ％以下の希硫酸又は２ｗｔ％以上２０ｗｔ％以下のクエン酸を含む。 In one embodiment of the present invention, the chemical solution contains 3 wt% or more and 15 wt% or less of dilute sulfuric acid or 2 wt% or more and 20 wt% or less of citric acid.
　薬液で基板のエッジ部の酸化膜を除去する際に、基板のエッジ部上のシード層が溶けないようにする必要がある。この一形態によれば、基板のエッジ部上のシード層を溶かすことなく、酸化膜を除去することができる。なお、希硫酸が３ｗｔ％未満又はクエン酸が２ｗｔ％未満であると、酸濃度が低すぎて、酸化膜を適切に除去することができない虞がある。また、希硫酸が１５ｗｔ％超又はクエン酸が２０ｗｔ％超であると、酸濃度が高すぎて、基板のエッジ部上のシード層を溶かしてしまう虞がある。 It is necessary to prevent the seed layer on the edge portion of the substrate from being dissolved when the oxide film on the edge portion of the substrate is removed with a chemical solution. According to this embodiment, the oxide film can be removed without dissolving the seed layer on the edge portion of the substrate. If the dilute sulfuric acid is less than 3 wt% or the citric acid is less than 2 wt%, the acid concentration may be too low to remove the oxide film properly. Further, if the diluted sulfuric acid exceeds 15 wt% or the citric acid exceeds 20 wt%, the acid concentration may be too high and the seed layer on the edge portion of the substrate may be dissolved.
　本発明の一形態において、めっき方法は、回転する前記基板のエッジ部にスポンジヘッドを接触させて、パーティクルを除去する工程を有する。 In one embodiment of the present invention, the plating method has a step of removing particles by bringing a sponge head into contact with the edge portion of the rotating substrate.
　この一形態によれば、基板ホルダの電気接点と基板のエッジ部上のシード層との間にパーティクルが挟み込まれることを防止することができ、パーティクルに起因する接触抵抗の悪化を抑制することができる。 According to this embodiment, it is possible to prevent particles from being sandwiched between the electrical contacts of the substrate holder and the seed layer on the edge portion of the substrate, and to suppress deterioration of contact resistance caused by the particles. it can.
　本発明の一形態において、前記除去工程は、前記基板のエッジ部に存在する有機物を局所的に脱離した後、前記酸化膜を局所的に除去する工程を含む。 In one embodiment of the present invention, the removing step includes a step of locally removing the oxide film after locally desorbing organic substances present at the edge portion of the substrate.
　基板のエッジ部においては、酸化膜上に有機物が付着し得る。したがって、有機物を脱離する前に酸化膜を除去した場合、有機物が付着した部分の酸化膜が除去され難い。この一形態によれば、有機物を脱離した後に酸化膜を除去するので、効果的に有機物及び酸化膜を除去することができる。 At the edge portion of the substrate, organic substances can adhere on the oxide film. Therefore, when the oxide film is removed before the organic substance is desorbed, it is difficult to remove the oxide film on the part to which the organic substance is attached. According to this embodiment, since the oxide film is removed after the organic substance is desorbed, the organic substance and the oxide film can be effectively removed.
　本発明の一形態において、前記除去工程は、前記基板の周縁部から基板中心に向かって２ｍｍの範囲内に存在する有機物及び酸化膜の少なくともいずれか１つを局所的に除去する工程を含む。 In one embodiment of the present invention, the removing step includes a step of locally removing at least one of an organic substance and an oxide film existing within a range of 2 mm from the peripheral edge of the substrate toward the center of the substrate.
　一般的に、基板ホルダの電気接点は、基板の周縁部から２ｍｍの範囲内のエッジ部と接触する。したがって、この一形態によれば、基板ホルダの電気接点が接触する基板上の部分に存在する有機物及び酸化膜の少なくともいずれか１つを局所的に除去することができる。 Generally, the electrical contact of the substrate holder contacts an edge portion within a range of 2 mm from the peripheral portion of the substrate. Therefore, according to this embodiment, it is possible to locally remove at least one of the organic substance and the oxide film present in the portion on the substrate with which the electrical contact of the substrate holder contacts.
　本発明の一形態において、前記除去工程は、前記基板が基板ホルダにより保持される際にシール部材でシールされる領域に隣接する、基板周縁部までの領域に存在する有機物及び酸化膜の少なくともいずれか１つを局所的に除去する工程を含む。 In one embodiment of the present invention, the removing step includes at least one of an organic substance and an oxide film existing in a region up to the peripheral edge of the substrate adjacent to a region sealed with a sealing member when the substrate is held by a substrate holder. Removing one of them locally.
　本発明の一形態において、めっき方法は、前記エッジ部に存在した有機物又は酸化膜の少なくともいずれか１つを局所的に除去した基板の前記エッジ部に光を照射して、反射する光の強度又は吸光度を測定する工程を有する。 In one embodiment of the present invention, the plating method irradiates light to the edge portion of the substrate from which at least one of the organic substance or the oxide film existing on the edge portion is locally removed, and reflects the intensity of the light reflected. Or it has the process of measuring a light absorbency.
　この一形態によれば、反射する光の強度又は吸光度を測定することで、エッジ部に存在する有機物及び酸化膜の少なくともいずれか１つを局所的に除去した基板に対して、エッジ部の汚染物質が十分に除去されているか否かを判定することができる。これにより、基板のエッジ部に汚染物質が存在しているかいないかをめっき処理前に判定し、その後、エッジ部に汚染物質が残存していない基板についてめっき処理を行うようにすることができるので、基板ホルダが有する電気接点の接触抵抗のばらつきに起因する基板Ｗのめっき膜厚の面内均一性の悪化等を、より確実に防止できる。 According to this embodiment, by measuring the intensity or absorbance of the reflected light, contamination of the edge portion with respect to the substrate from which at least one of the organic matter and the oxide film existing on the edge portion has been locally removed is obtained. It can be determined whether the material has been sufficiently removed. As a result, it is possible to determine whether or not contaminants are present on the edge portion of the substrate before the plating process, and thereafter, the plating process can be performed on the substrate having no contaminants remaining on the edge portion. In addition, it is possible to more reliably prevent the deterioration of the in-plane uniformity of the plating film thickness of the substrate W caused by the variation in the contact resistance of the electrical contacts of the substrate holder.
　本発明の一形態によれば、基板にめっきを行うめっき装置が提供される。このめっき装置は、基板ホルダに保持された前記基板に電圧を印加してめっきを行うためのめっき槽と、前記基板のエッジ部に存在する有機物、酸化膜及びパーティクルの少なくともいずれか１つを局所的に除去するエッジ部洗浄装置と、を有する。 According to one aspect of the present invention, a plating apparatus for plating a substrate is provided. This plating apparatus locally applies at least one of a plating tank for performing plating by applying a voltage to the substrate held by a substrate holder, and an organic substance, an oxide film, and particles present on the edge portion of the substrate. And an edge portion cleaning device for removing the target.
　この一形態によれば、基板ホルダにセットされる前に、基板のエッジ部に存在する有機物、酸化膜、及びパーティクルの少なくともいずれか１つを局所的に除去することができる。したがって、基板のエッジ部以外の表面に形成されたレジストパターンに悪影響を与えることなく、基板のエッジ部に存在する有機物、酸化膜、及びパーティクルの少なくともいずれか１つによる基板ホルダの電気接点の接触抵抗のバラつきを抑制し、めっき膜厚の均一性の悪化を防止することができる。 According to this embodiment, it is possible to locally remove at least one of organic substances, oxide films, and particles present on the edge portion of the substrate before being set on the substrate holder. Therefore, the contact of the electrical contact of the substrate holder by at least one of the organic substance, the oxide film, and the particles existing on the edge portion of the substrate without adversely affecting the resist pattern formed on the surface other than the edge portion of the substrate. Resistance variation can be suppressed, and deterioration of the uniformity of the plating film thickness can be prevented.
　本発明の一形態によれば、基板にめっきを行うめっき方法が提供される。このめっき方法は、基板ホルダに保持される前の前記基板のエッジ部に存在する有機物、酸化膜及びパーティクルの少なくともいずれか１つを局所的に除去する除去工程と、前記基板を基板ホルダに保持する工程と、前記基板ホルダに保持された前記基板にめっき処理を行う工程と、を有する。 According to one aspect of the present invention, a plating method for plating a substrate is provided. This plating method includes a removal step of locally removing at least one of organic substances, oxide films, and particles present on the edge portion of the substrate before being held by the substrate holder, and holding the substrate on the substrate holder. And a step of performing plating on the substrate held by the substrate holder.
　この一形態によれば、基板ホルダにセットされる前に、基板のエッジ部に存在する有機物、酸化膜、及びパーティクルの少なくともいずれか１つを局所的に除去することができる。したがって、基板のエッジ部以外の表面に形成されたレジストパターンに悪影響を与えることなく、基板のエッジ部に存在する有機物、酸化膜、及びパーティクルの少なくともいずれか１つによる基板ホルダの電気接点の接触抵抗のバラつきを抑制し、めっき膜厚の均一性の悪化を防止することができる。 According to this embodiment, it is possible to locally remove at least one of organic substances, oxide films, and particles present on the edge portion of the substrate before being set on the substrate holder. Therefore, the contact of the electrical contact of the substrate holder by at least one of the organic substance, the oxide film, and the particles existing on the edge portion of the substrate without adversely affecting the resist pattern formed on the surface other than the edge portion of the substrate. Resistance variation can be suppressed, and deterioration of the uniformity of the plating film thickness can be prevented.
　本発明の一形態のめっき装置によれば、前記エッジ部洗浄装置は、前記基板のエッジ部に存在する有機物を局所的に脱離する有機物脱離装置を含み、前記有機物脱離装置は、前記基板のエッジ部にＵＶを照射するＵＶ照射装置又は前記基板のエッジ部にプラズマを放射するプラズマ放射装置を含む。 According to the plating apparatus of one aspect of the present invention, the edge part cleaning apparatus includes an organic substance detaching apparatus that locally detaches organic substances present on the edge part of the substrate, and the organic substance detaching apparatus includes A UV irradiation apparatus for irradiating UV to an edge portion of the substrate or a plasma irradiation apparatus for radiating plasma to the edge portion of the substrate;
　一般的に、めっきされる基板上にはレジストが塗布されており、このレジストにＵＶ又はプラズマを放射すると、レジストが変性し、ダメージを受ける恐れがある。この一形態によれば、基板のエッジ部に局所的にＵＶ又はプラズマを放射することができる。これにより、基板のエッジ部以外の表面、即ち基板上のレジストが塗布されている部分にはＵＶ又はプラズマを放射することがないので、基板上のレジストにダメージを与えることなく、基板のエッジ部の有機物を脱離させることができる。 Generally, a resist is coated on a substrate to be plated. If UV or plasma is radiated to the resist, the resist may be modified and damaged. According to this embodiment, UV or plasma can be locally emitted to the edge portion of the substrate. Thereby, UV or plasma is not emitted to the surface other than the edge portion of the substrate, that is, the portion where the resist is applied on the substrate, so that the edge portion of the substrate is not damaged without damaging the resist on the substrate. The organic matter can be eliminated.
　本発明の一形態のめっき装置によれば、前記エッジ部洗浄装置は、前記基板のエッジ部に局所的にＵＶ又はプラズマを適用するように構成されたヘッド部と、前記ヘッド部を水平方向に移動させるアクチュエータを有する。 According to the plating apparatus of one aspect of the present invention, the edge cleaning apparatus includes a head configured to apply UV or plasma locally to the edge of the substrate, and the head in the horizontal direction. It has an actuator to move.
　この一形態によれば、ヘッド部が水平方向に移動可能であるので、例えば矩形状の基板であっても、エッジ部に沿ってヘッド部を移動させることで、エッジ部の洗浄を行うことができる。 According to this embodiment, since the head portion can be moved in the horizontal direction, the edge portion can be cleaned by moving the head portion along the edge portion even for a rectangular substrate, for example. it can.
　本発明の一形態のめっき装置によれば、前記アクチュエータは、第１方向に前記ヘッド部を移動させる第１アクチュエータと、前記第１方向と直交する第２方向に前記ヘッド部を移動させる第２アクチュエータと、を有する。 According to the plating apparatus of one aspect of the present invention, the actuator includes a first actuator that moves the head portion in a first direction, and a second that moves the head portion in a second direction orthogonal to the first direction. And an actuator.
　この一形態によれば、ヘッド部を第１方向と第２方向とに移動させることができる。このため、エッジ部に沿ってヘッド部を移動させるだけでなく、エッジ部の延びる方向と直交する方向にヘッド部を位置合わせすることができる。したがって、例えば基板が長辺と短辺を有する矩形基板である場合でも、長辺のエッジ部と、短辺のエッジ部との両方にヘッド部を位置合わせすることができる。 According to this embodiment, the head portion can be moved in the first direction and the second direction. For this reason, not only a head part can be moved along an edge part but a head part can be aligned in the direction orthogonal to the direction where an edge part extends. Therefore, for example, even when the substrate is a rectangular substrate having a long side and a short side, the head portion can be aligned with both the long-side edge portion and the short-side edge portion.
　本発明の一形態のめっき装置によれば、前記エッジ部洗浄装置は、前記ヘッド部及び前記アクチュエータを制御する制御部を有し、前記アクチュエータは、前記基板のエッジ部に沿って前記ヘッド部を移動させるように構成され、前記制御部は、前記ヘッド部によるＵＶ又はプラズマの放射と前記アクチュエータによる前記基板のエッジ部に沿った前記ヘッド部の移動とを同時に行うように、前記ヘッド部及び前記アクチュエータを制御する。 According to the plating apparatus of one aspect of the present invention, the edge part cleaning apparatus has a control unit that controls the head part and the actuator, and the actuator moves the head part along the edge part of the substrate. The control unit is configured to move the head unit and the head unit so as to simultaneously perform UV or plasma radiation by the head unit and movement of the head unit along the edge of the substrate by the actuator. Control the actuator.
　この一形態によれば、矩形基板のエッジ部に沿ってヘッド部を移動させつつＵＶ又はプラズマを放射することができる。 According to this embodiment, UV or plasma can be emitted while moving the head portion along the edge portion of the rectangular substrate.
　本発明の一形態のめっき装置によれば、前記エッジ部洗浄装置は、前記ヘッド部を旋回させる旋回機構を有し、前記制御部は、前記旋回機構による前記ヘッド部の旋回時には前記ヘッド部によるＵＶ又はプラズマの放射を停止させるように、前記ヘッド部及び前記旋回機構を制御する。 According to the plating apparatus of one aspect of the present invention, the edge part cleaning apparatus has a turning mechanism that turns the head part, and the control part uses the head part when the head part turns by the turning mechanism. The head unit and the turning mechanism are controlled so as to stop the emission of UV or plasma.
　この一形態によれば、ヘッド部が旋回できるので、矩形基板の４辺のエッジ部上にヘッド部を容易に移動させることができる。また、ヘッド部が旋回している間はヘッド部によるＵＶ又はプラズマの放射を行わないので、矩形基板上の意図しない領域にＵＶ又はプラズマが放射されることを防止することができる。 According to this embodiment, since the head portion can be swiveled, the head portion can be easily moved on the four edge portions of the rectangular substrate. Further, since UV or plasma is not emitted by the head while the head is turning, it is possible to prevent UV or plasma from being emitted to an unintended region on the rectangular substrate.
　本発明の一形態のめっき装置によれば、前記エッジ部洗浄装置は、前記基板を回転させる回転機構と、前記ヘッド部、前記回転機構、及び前記アクチュエータを制御する制御部と、を有し、前記制御部は、前記回転機構による前記基板の回転時には前記ヘッド部によるＵＶ又はプラズマの放射を停止させるように、前記ヘッド部及び前記回転機構を制御する。 According to the plating apparatus of one aspect of the present invention, the edge cleaning apparatus includes a rotation mechanism that rotates the substrate, a control unit that controls the head unit, the rotation mechanism, and the actuator. The control unit controls the head unit and the rotation mechanism so as to stop radiation of UV or plasma by the head unit when the substrate is rotated by the rotation mechanism.
　この一形態によれば、基板を回転させることができるので、ヘッド部の下方に矩形基板の４辺のエッジ部を容易に移動させることができる。また、基板が回転している間はヘッド部によるＵＶ又はプラズマの放射を行わないので、矩形基板上の意図しない領域にＵＶ又はプラズマが放射されることを防止することができる。 According to this embodiment, since the substrate can be rotated, the four edge portions of the rectangular substrate can be easily moved below the head portion. Further, since the UV or plasma is not emitted by the head unit while the substrate is rotating, it is possible to prevent UV or plasma from being emitted to an unintended region on the rectangular substrate.
　本発明の一形態のめっき方法によれば、前記除去工程は、ＵＶ又はプラズマを放射するヘッド部を矩形の前記基板のエッジ部に沿って移動させながらＵＶ又はプラズマを放射する工程を有する。 According to the plating method of one aspect of the present invention, the removing step includes a step of emitting UV or plasma while moving a head portion that emits UV or plasma along the edge portion of the rectangular substrate.
　この一形態によれば、矩形基板のエッジ部に沿ってヘッド部を移動させつつＵＶ又はプラズマを放射することができる。 According to this embodiment, UV or plasma can be emitted while moving the head portion along the edge portion of the rectangular substrate.
　本発明の一形態のめっき方法によれば、前記除去工程は、前記ヘッド部を水平方向に移動させて、前記矩形の基板のエッジ部に前記ヘッド部を位置合わせする工程を有する。 According to the plating method of one aspect of the present invention, the removing step includes a step of moving the head portion in a horizontal direction to align the head portion with an edge portion of the rectangular substrate.
　この一形態によれば、例えば基板が長辺と短辺を有する矩形基板である場合でも、長辺のエッジ部と、短辺のエッジ部との両方にヘッド部を位置合わせすることができる。 According to this embodiment, even when the substrate is a rectangular substrate having a long side and a short side, for example, the head portion can be aligned with both the long side edge portion and the short side edge portion.
　本発明の一形態のめっき方法によれば、前記除去工程は、前記矩形の基板のエッジ部の一つにＵＶ又はプラズマを放射した後、ＵＶ又はプラズマの放射を停止させながら前記ヘッド部を旋回させる工程を有する。 According to the plating method of one aspect of the present invention, in the removing step, after radiating UV or plasma to one of the edge portions of the rectangular substrate, the head portion is turned while stopping the emission of UV or plasma. A step of causing
　この一形態によれば、ヘッド部が旋回できるので、矩形基板の４辺のエッジ部上にヘッド部を容易に移動させることができる。また、ヘッド部が旋回している間はヘッド部によるＵＶ又はプラズマの放射を行わないので、矩形基板上の意図しない領域にＵＶ又はプラズマが放射されることを防止することができる。 According to this embodiment, since the head portion can be swiveled, the head portion can be easily moved on the four edge portions of the rectangular substrate. Further, since UV or plasma is not emitted by the head while the head is turning, it is possible to prevent UV or plasma from being emitted to an unintended region on the rectangular substrate.
　本発明の一形態のめっき方法によれば、前記除去工程は、前記矩形の基板のエッジ部の一つにＵＶ又はプラズマを放射した後、ＵＶ又はプラズマの放射を停止させながら前記矩形の基板を回転させる工程を有する。 According to the plating method of one aspect of the present invention, the removing step radiates UV or plasma to one of the edge portions of the rectangular substrate, and then stops the emission of the UV or plasma while stopping the emission of UV or plasma. A step of rotating.
　この一形態によれば、基板を回転させることができるので、ヘッド部の下方に矩形基板の４辺のエッジ部を容易に移動させることができる。また、基板が回転している間はヘッド部によるＵＶ又はプラズマの放射を行わないので、矩形基板上の意図しない領域にＵＶ又はプラズマが放射されることを防止することができる。 According to this embodiment, since the substrate can be rotated, the four edge portions of the rectangular substrate can be easily moved below the head portion. Further, since the UV or plasma is not emitted by the head unit while the substrate is rotating, it is possible to prevent UV or plasma from being emitted to an unintended region on the rectangular substrate.
　本発明によれば、基板のエッジ部に形成される酸化膜及び基板のエッジ部に付着する有機物の少なくともいずれかを原因とするめっき膜厚の均一性の悪化を防止することができる。 According to the present invention, it is possible to prevent the deterioration of the uniformity of the plating film thickness caused by at least one of the oxide film formed on the edge portion of the substrate and the organic substance adhering to the edge portion of the substrate.
第１実施形態にかかるめっき装置の全体配置図である。1 is an overall layout diagram of a plating apparatus according to a first embodiment. 図１に示しためっき装置で使用される基板ホルダの斜視図である。It is a perspective view of the board | substrate holder used with the plating apparatus shown in FIG. 図２に示した基板ホルダの電気接点を示す断面図である。It is sectional drawing which shows the electrical contact of the board | substrate holder shown in FIG. 図１に示したアライナの概略上面図である。It is a schematic top view of the aligner shown in FIG. 図４に示す矢視５－５におけるアライナの概略断面図である。FIG. 5 is a schematic sectional view of the aligner taken along line 5-5 shown in FIG. 図４に示す矢視６－６におけるアライナの概略断面図である。FIG. 6 is a schematic cross-sectional view of the aligner taken along arrow 6-6 shown in FIG. 第１実施形態に係るめっき方法を示すフロー図である。It is a flowchart which shows the plating method which concerns on 1st Embodiment. 第１実施形態に係る他の例のめっき装置の全体配置図である。It is the whole arrangement drawing of the plating apparatus of other examples concerning a 1st embodiment. 第２実施形態に係るめっき装置の全体配置図である。It is a whole layout drawing of the plating apparatus concerning a 2nd embodiment. 酸化膜除去装置を備えたスピンリンスドライヤを示す概略図である。It is the schematic which shows the spin rinse dryer provided with the oxide film removal apparatus. 第２実施形態に係るめっき方法を示すフロー図である。It is a flowchart which shows the plating method which concerns on 2nd Embodiment. 第３実施形態にかかるめっき装置の全体配置図である。It is a whole layout drawing of the plating apparatus concerning a 3rd embodiment. 第３実施形態に係るめっき方法を示すフロー図である。It is a flowchart which shows the plating method which concerns on 3rd Embodiment. 第４実施形態にかかるめっき装置の全体配置図である。It is a whole layout drawing of the plating apparatus concerning a 4th embodiment. スポンジ洗浄装置の概略側面図である。It is a schematic side view of a sponge cleaning apparatus. 第４実施形態に係るめっき方法を示すフロー図である。It is a flowchart which shows the plating method which concerns on 4th Embodiment. 第５実施形態にかかるめっき装置の全体配置図である。It is a whole layout view of the plating apparatus concerning a 5th embodiment. スポンジ薬液洗浄装置の概略側面図である。It is a schematic side view of a sponge chemical | medical solution washing | cleaning apparatus. 第５実施形態に係るめっき方法を示すフロー図である。It is a flowchart which shows the plating method which concerns on 5th Embodiment. 第６実施形態にかかるめっき装置の全体配置図である。It is a whole layout drawing of the plating apparatus concerning a 6th embodiment. 第６実施形態に係るめっき方法を示すフロー図である。It is a flowchart which shows the plating method which concerns on 6th Embodiment. フィキシングユニットに設けられる有機物脱離装置の一例の概略側面図である。It is a schematic side view of an example of the organic substance detachment | desorption apparatus provided in a fixing unit. 図２２に示した有機物脱離装置で矩形基板のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置の平面図である。It is a top view of the organic substance detachment | desorption apparatus which shows the process of detach | desorbing the organic substance of the edge part of a rectangular substrate with the organic substance detachment | desorption apparatus shown in FIG. 図２２に示した有機物脱離装置で矩形基板のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置の平面図である。It is a top view of the organic substance detachment | desorption apparatus which shows the process of detach | desorbing the organic substance of the edge part of a rectangular substrate with the organic substance detachment | desorption apparatus shown in FIG. 図２２に示した有機物脱離装置で矩形基板のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置の平面図である。It is a top view of the organic substance detachment | desorption apparatus which shows the process of detach | desorbing the organic substance of the edge part of a rectangular substrate with the organic substance detachment | desorption apparatus shown in FIG. 図２２に示した有機物脱離装置で矩形基板のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置の平面図である。It is a top view of the organic substance detachment | desorption apparatus which shows the process of detach | desorbing the organic substance of the edge part of a rectangular substrate with the organic substance detachment | desorption apparatus shown in FIG. 図２２に示した有機物脱離装置で矩形基板のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置の平面図である。It is a top view of the organic substance detachment | desorption apparatus which shows the process of detach | desorbing the organic substance of the edge part of a rectangular substrate with the organic substance detachment | desorption apparatus shown in FIG. フィキシングユニットに設けられる有機物脱離装置の他の一例の概略側面図である。It is a schematic side view of another example of the organic substance detachment apparatus provided in the fixing unit. 図２４に示した有機物脱離装置で矩形基板のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置の平面図である。FIG. 25 is a plan view of the organic matter detachment apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detachment apparatus shown in FIG. 24. 図２４に示した有機物脱離装置で矩形基板のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置の平面図である。FIG. 25 is a plan view of the organic matter detachment apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detachment apparatus shown in FIG. 24. 図２４に示した有機物脱離装置で矩形基板のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置の平面図である。FIG. 25 is a plan view of the organic matter detachment apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detachment apparatus shown in FIG. 24. 図２４に示した有機物脱離装置で矩形基板のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置の平面図である。FIG. 25 is a plan view of the organic matter detachment apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detachment apparatus shown in FIG. 24. 図２４に示した有機物脱離装置で矩形基板のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置の平面図である。FIG. 25 is a plan view of the organic matter detachment apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detachment apparatus shown in FIG. 24. フィキシングユニットに設けられる有機物脱離装置の他の一例の概略側面図である。It is a schematic side view of another example of the organic substance detachment apparatus provided in the fixing unit. 図２６に示した有機物脱離装置で矩形基板のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置の平面図である。FIG. 27 is a plan view of the organic matter detachment apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detachment apparatus shown in FIG. 26. 図２６に示した有機物脱離装置で矩形基板のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置の平面図である。FIG. 27 is a plan view of the organic matter detachment apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detachment apparatus shown in FIG. 26. 図２６に示した有機物脱離装置で矩形基板のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置の平面図である。FIG. 27 is a plan view of the organic matter detachment apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detachment apparatus shown in FIG. 26. フィキシングユニットに設けられる有機物脱離装置の他の一例の概略側面図である。It is a schematic side view of another example of the organic substance detachment apparatus provided in the fixing unit. 図２８に示した有機物脱離装置で矩形基板のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置の平面図である。FIG. 29 is a plan view of the organic matter detaching apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detaching apparatus shown in FIG. 28. 図２８に示した有機物脱離装置で矩形基板のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置の平面図である。FIG. 29 is a plan view of the organic matter detaching apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detaching apparatus shown in FIG. 28. 図２８に示した有機物脱離装置で矩形基板のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置の平面図である。FIG. 29 is a plan view of the organic matter detaching apparatus showing a process of detaching organic substances at the edge portion of the rectangular substrate with the organic matter detaching apparatus shown in FIG. 28.
＜第１実施形態＞
　以下、本発明の実施形態について図面を参照して説明する。以下で説明する図面において、同一の又は相当する構成要素には、同一の符号を付して重複した説明を省略する。 <First Embodiment>
Embodiments of the present invention will be described below with reference to the drawings. In the drawings described below, the same or corresponding components are denoted by the same reference numerals, and redundant description is omitted.
　図１は、第１実施形態にかかるめっき装置の全体配置図である。図１に示すように、このめっき装置は、基板ホルダ６０に基板をロードし、又は基板ホルダ６０から基板をアンロードするロード／アンロード部１７０Ａと、基板を処理する処理部１７０Ｂとに大きく分けられる。 FIG. 1 is an overall layout diagram of the plating apparatus according to the first embodiment. As shown in FIG. 1, this plating apparatus is roughly divided into a load / unload unit 170A for loading a substrate to the substrate holder 60 or unloading the substrate from the substrate holder 60, and a processing unit 170B for processing the substrate. It is done.
　ロード／アンロード部１７０Ａには、３台のフープ（Ｆｒｏｎｔ－Ｏｐｅｎｉｎｇ　Ｕｎｉｆｉｅｄ　Ｐｏｄ：ＦＯＵＰ）１０２と、基板のオリフラ（オリエンテーションフラット）やノッチなどの位置を所定の方向に合わせるアライナ４０と、めっき処理後の基板を高速回転させて乾燥させるスピンリンスドライヤ２０とが設けられる。フープ１０２は、半導体ウェハ等の複数の基板を多段に収納する。スピンリンスドライヤ２０の近くには、基板ホルダ６０を載置して基板の着脱を行うフィキシングユニット１２０が設けられている。これらのユニット１０２，４０，２０，１２０の中央には、これらのユニット間で基板を搬送する搬送用ロボットからなる基板搬送装置１２２が配置されている。後述するように、第１実施形態に係るアライナ４０は、基板ホルダ６０にセットされる前の基板のエッジ部に存在する有機物を局所的に脱離する有機物脱離装置（図４及び図６等参照）を有する。 The load / unload unit 170A includes three hoops (Front-Opening Unified Pod: FOUP) 102, an aligner 40 for aligning the orientation flats and notches of the substrate in a predetermined direction, and after the plating process. And a spin rinse dryer 20 for drying the substrate by rotating it at a high speed. The hoop 102 stores a plurality of substrates such as semiconductor wafers in multiple stages. Near the spin rinse dryer 20, there is provided a fixing unit 120 on which the substrate holder 60 is placed and the substrate is attached and detached. In the center of these units 102, 40, 20, and 120, a substrate transfer device 122 including a transfer robot that transfers a substrate between these units is disposed. As will be described later, the aligner 40 according to the first embodiment is an organic substance detachment device (such as FIGS. 4 and 6) that locally desorbs organic substances present at the edge portion of the substrate before being set on the substrate holder 60. See).
　フィキシングユニット１２０は、２個の基板ホルダ６０を載置可能に構成される。フィキシングユニット１２０においては、一方の基板ホルダ６０と基板搬送装置１２２との間で基板の受渡しが行われた後、他方の基板ホルダ６０と基板搬送装置１２２との間で基板の受渡しが行われる。 The fixing unit 120 is configured so that two substrate holders 60 can be placed thereon. In the fixing unit 120, the substrate is transferred between the one substrate holder 60 and the substrate transfer device 122, and then the substrate is transferred between the other substrate holder 60 and the substrate transfer device 122.
　めっき装置の処理部１７０Ｂは、ストッカ１２４と、プリウェット槽１２６と、プリソーク槽１２８と、第１洗浄槽１３０ａと、ブロー槽１３２と、第２洗浄槽１３０ｂと、めっき槽１０と、を有する。ストッカ１２４では、基板ホルダ６０の保管及び一時仮置きが行われる。プリウェット槽１２６では、基板が純水に浸漬される。プリソーク槽１２８では、基板の表面に形成したシード層等の導電層の表面にある酸化膜がエッチング除去される。第１洗浄槽１３０ａでは、プリソーク後の基板が基板ホルダ６０と共に洗浄液（純水等）で洗浄される。ブロー槽１３２では、洗浄後の基板の液切りが行われる。第２洗浄槽１３０ｂでは、めっき後の基板が基板ホルダ６０と共に洗浄液で洗浄される。ストッカ１２４、プリウェット槽１２６、プリソーク槽１２８、第１洗浄槽１３０ａ、ブロー槽１３２、第２洗浄槽１３０ｂ、及びめっき槽１０は、この順に配置されている。 The processing unit 170B of the plating apparatus includes a stocker 124, a pre-wet tank 126, a pre-soak tank 128, a first cleaning tank 130a, a blow tank 132, a second cleaning tank 130b, and a plating tank 10. In the stocker 124, the substrate holder 60 is stored and temporarily placed. In the pre-wet tank 126, the substrate is immersed in pure water. In the pre-soak tank 128, the oxide film on the surface of the conductive layer such as the seed layer formed on the surface of the substrate is removed by etching. In the first cleaning tank 130a, the pre-soaked substrate is cleaned with a cleaning liquid (pure water or the like) together with the substrate holder 60. In the blow tank 132, the substrate is drained after cleaning. In the second cleaning tank 130b, the substrate after plating is cleaned with the cleaning liquid together with the substrate holder 60. The stocker 124, the pre-wet tank 126, the pre-soak tank 128, the first cleaning tank 130a, the blow tank 132, the second cleaning tank 130b, and the plating tank 10 are arranged in this order.
　めっき槽１０は、例えば、オーバーフロー槽を備えた複数のめっきセル１３４を有する。各めっきセル１３４は、内部に一つの基板を収納し、内部に保持しためっき液中に基板を浸漬させる。めっきセル１３４において基板とアノードとの間に電圧を印加することにより、基板表面に銅めっき等のめっきが行われる。 The plating tank 10 includes, for example, a plurality of plating cells 134 provided with an overflow tank. Each plating cell 134 houses one substrate therein and immerses the substrate in a plating solution held inside. By applying a voltage between the substrate and the anode in the plating cell 134, plating such as copper plating is performed on the substrate surface.
　めっき装置は、これらの各機器の側方に位置して、これらの各機器の間で基板ホルダ６０を基板とともに搬送する、例えばリニアモータ方式を採用した基板ホルダ搬送装置１４０を有する。この基板ホルダ搬送装置１４０は、第１トランスポータ１４２と、第２トランスポータ１４４を有している。第１トランスポータ１４２は、フィキシングユニット１２０、ストッカ１２４、プリウェット槽１２６、プリソーク槽１２８、第１洗浄槽１３０ａ、及びブロー槽１３２との間で基板を搬送するように構成される。第２トランスポータ１４４は、第１洗浄槽１３０ａ、第２洗浄槽１３０ｂ、ブロー槽１３２、及びめっき槽１０との間で基板を搬送するように構成される。他の実施形態では、めっき装置は、第１トランスポータ１４２及び第２トランスポータ１４４のいずれか一方のみを備えるようにし、いずれかのトランスポータが、フィキシングユニット１２０、ストッカ１２４、プリウェット槽１２６、プリソーク槽１２８、第１洗浄槽１３０ａ、第２洗浄槽１３０ｂ、ブロー槽１３２、及びめっき槽１０の間で基板を搬送するようにしてもよい。 The plating apparatus has a substrate holder transport device 140 that employs a linear motor system, for example, that transports the substrate holder 60 together with the substrate between these devices, located on the side of these devices. The substrate holder transport device 140 includes a first transporter 142 and a second transporter 144. The first transporter 142 is configured to transfer the substrate between the fixing unit 120, the stocker 124, the pre-wet tank 126, the pre-soak tank 128, the first cleaning tank 130 a, and the blow tank 132. The second transporter 144 is configured to transfer the substrate between the first cleaning tank 130 a, the second cleaning tank 130 b, the blow tank 132, and the plating tank 10. In another embodiment, the plating apparatus includes only one of the first transporter 142 and the second transporter 144, and any one of the transporters includes the fixing unit 120, the stocker 124, the pre-wet bath 126, The substrate may be transferred among the pre-soak tank 128, the first cleaning tank 130a, the second cleaning tank 130b, the blow tank 132, and the plating tank 10.
　図２は図１に示しためっき装置で使用される基板ホルダ６０の斜視図である。基板ホルダ６０は、図２に示すように、例えば塩化ビニル製で矩形平板状の第１保持部材６５と、この第１保持部材６５にヒンジ６３を介して開閉自在に取付けられた第２保持部材６６とを有している。基板ホルダ６０の第１保持部材６５の略中央部には、基板を保持するための保持面６８が設けられている。また、第１保持部材６５の保持面６８の外側には、保持面６８の円周に沿って、内方に突出する突出部を有する逆Ｌ字状のクランパ６７が等間隔に設けられている。 FIG. 2 is a perspective view of the substrate holder 60 used in the plating apparatus shown in FIG. As shown in FIG. 2, the substrate holder 60 includes a first holding member 65 made of, for example, vinyl chloride and having a rectangular flat plate shape, and a second holding member attached to the first holding member 65 through a hinge 63 so as to be opened and closed. 66. A holding surface 68 for holding the substrate is provided at a substantially central portion of the first holding member 65 of the substrate holder 60. Further, on the outer side of the holding surface 68 of the first holding member 65, inverted L-shaped clampers 67 having protrusions protruding inward along the circumference of the holding surface 68 are provided at equal intervals. .
　基板ホルダ６０の第１保持部材６５の端部には、基板ホルダ６０を搬送したり吊下げ支持したりする際の支持部となる一対の略Ｔ字状のハンド６９が連結されている。図１に示したストッカ１２４内において、ストッカ１２４の周壁上面にハンド６９を引っ掛けることで、基板ホルダ６０が垂直に吊下げ支持される。また、この吊下げ支持された基板ホルダ６０のハンド６９を第１トランスポータ１４２又は第２トランスポータ１４４で把持して基板ホルダ６０が搬送される。なお、プリウェット槽１２６、プリソーク槽１２８、洗浄槽１３０ａ，１３０ｂ、ブロー槽１３２及びめっき槽１０内においても、基板ホルダ６０は、ハンド６９を介してそれらの周壁に吊下げ支持される。 A pair of substantially T-shaped hands 69 are connected to the end of the first holding member 65 of the substrate holder 60 as a support when the substrate holder 60 is transported or supported in a suspended manner. In the stocker 124 illustrated in FIG. 1, the substrate holder 60 is suspended and supported vertically by hooking the hand 69 on the upper surface of the peripheral wall of the stocker 124. Further, the substrate holder 60 is conveyed by holding the hand 69 of the substrate holder 60 supported by the suspension by the first transporter 142 or the second transporter 144. Note that the substrate holder 60 is also supported by being suspended on the peripheral walls via the hand 69 in the pre-wet tank 126, the pre-soak tank 128, the cleaning tanks 130a and 130b, the blow tank 132, and the plating tank 10.
　また、ハンド６９には、外部の電力供給部に接続するための図示しない外部接点が設けられている。この外部接点は、複数の配線を介して保持面６８の外周に設けられた複数の導電体７３（図３参照）と電気的に接続されている。 Further, the hand 69 is provided with an external contact (not shown) for connection to an external power supply unit. The external contacts are electrically connected to a plurality of conductors 73 (see FIG. 3) provided on the outer periphery of the holding surface 68 via a plurality of wirings.
　第２保持部材６６は、ヒンジ６３に固定された基部６１と、基部６１に固定されたリング状のシールホルダ６２とを備えている。第２保持部材６６のシールホルダ６２には、シールホルダ６２を第１保持部材６５に押し付けて固定するための押えリング６４が回転自在に装着されている。押えリング６４は、その外周部において外方に突出する複数の突条部６４ａを有している。突条部６４ａの上面とクランパ６７の内方突出部の下面は、回転方向に沿って互いに逆方向に傾斜するテーパ面を有する。 The second holding member 66 includes a base 61 fixed to the hinge 63 and a ring-shaped seal holder 62 fixed to the base 61. A presser ring 64 for pressing and fixing the seal holder 62 against the first holding member 65 is rotatably mounted on the seal holder 62 of the second holding member 66. The presser ring 64 has a plurality of protrusions 64a that protrude outward at the outer peripheral portion thereof. The upper surface of the protruding portion 64a and the lower surface of the inwardly protruding portion of the clamper 67 have tapered surfaces that are inclined in opposite directions along the rotational direction.
　基板を保持するときは、まず、第２保持部材６６を開いた状態で、第１保持部材６５の保持面６８に基板を載置し、第２保持部材６６を閉じる。続いて、押えリング６４を時計回りに回転させて、押えリング６４の突条部６４ａをクランパ６７の内方突出部の内部（下側）に滑り込ませる。これにより、押えリング６４とクランパ６７にそれぞれ設けられたテーパ面を介して、第１保持部材６５と第２保持部材６６とが互いに締付けられてロックされ、基板が保持される。基板の保持を解除するときは、第１保持部材６５と第２保持部材６６とがロックされた状態において、押えリング６４を反時計回りに回転させる。これにより、押えリング６４の突条部６４ａが逆Ｌ字状のクランパ６７から外されて、基板の保持が解除される。 When holding the substrate, first, the substrate is placed on the holding surface 68 of the first holding member 65 with the second holding member 66 open, and the second holding member 66 is closed. Subsequently, the presser ring 64 is rotated clockwise, and the protrusion 64 a of the presser ring 64 is slid into the inner projecting portion (lower side) of the clamper 67. Thus, the first holding member 65 and the second holding member 66 are tightened and locked to each other via the tapered surfaces provided on the presser ring 64 and the clamper 67, respectively, and the substrate is held. When releasing the holding of the substrate, the presser ring 64 is rotated counterclockwise while the first holding member 65 and the second holding member 66 are locked. As a result, the protrusion 64a of the presser ring 64 is removed from the inverted L-shaped clamper 67, and the holding of the substrate is released.
　図３は、図２に示した基板ホルダ６０の電気接点を示す断面図である。図３に示すように、第１保持部材６５の保持面６８には基板Ｗが載置されている。保持面６８と第１保持部材６５との間には、図２に示したハンド６９に設けられた外部接点から延びる複数の配線に接続された複数の（図示では１つの）導電体７３が配置されている。導電体７３は、第１保持部材６５の保持面６８上に基板Ｗを載置した際、この導電体７３の端部が基板Ｗの側方で第１保持部材６５の表面にばね特性を有した状態で露出するように基板Ｗの円周外側に複数配置されている。 FIG. 3 is a cross-sectional view showing electrical contacts of the substrate holder 60 shown in FIG. As shown in FIG. 3, the substrate W is placed on the holding surface 68 of the first holding member 65. Between the holding surface 68 and the first holding member 65, a plurality of (one in the figure) conductors 73 connected to a plurality of wires extending from external contacts provided on the hand 69 shown in FIG. Has been. When the substrate 73 is placed on the holding surface 68 of the first holding member 65, the conductor 73 has a spring characteristic on the surface of the first holding member 65 at the end of the conductor 73 on the side of the substrate W. A plurality of substrates are arranged outside the circumference of the substrate W so as to be exposed in this state.
　シールホルダ６２の、第１保持部材６５と対向する面（図中下面）には、基板ホルダ６０で基板Ｗを保持したときに基板Ｗの表面外周部及び第１保持部材６５に圧接されるシール部材７０が取付けられている。シール部材７０は、基板Ｗの表面をシールするリップ部７０ａと、第１保持部材６５の表面をシールするリップ部７０ｂとを有する。 The surface of the seal holder 62 facing the first holding member 65 (the lower surface in the figure) is a seal that is pressed against the outer peripheral portion of the surface of the substrate W and the first holding member 65 when the substrate W is held by the substrate holder 60. A member 70 is attached. The seal member 70 includes a lip portion 70 a that seals the surface of the substrate W and a lip portion 70 b that seals the surface of the first holding member 65.
　シール部材７０の一対のリップ部７０ａ，７０ｂで挟まれた内部には、支持体７１が取付けられる。支持体７１には導電体７３から給電可能に構成された電気接点７２が、例えばねじ等で固定され、基板Ｗの円周に沿って複数配置されている。電気接点７２は、保持面６８の内側へ向かって延びる電気接点端部７２ａと、導電体７３から給電可能に構成された脚部７２ｂとを有している。 A support 71 is attached to the inside of the seal member 70 sandwiched between the pair of lip portions 70a and 70b. An electrical contact 72 configured to be able to supply power from the conductor 73 is fixed to the support 71 with, for example, a screw, and a plurality of electrical contacts 72 are arranged along the circumference of the substrate W. The electrical contact 72 has an electrical contact end portion 72 a extending toward the inside of the holding surface 68 and a leg portion 72 b configured to be able to supply power from the conductor 73.
　図２に示した第１保持部材６５と第２保持部材６６とがロックされると、図３に示すように、シール部材７０の内周面側の短いリップ部７０ａが基板Ｗの表面に、外周面側の長いリップ部７０ｂが第１保持部材６５の表面にそれぞれ押圧される。これにより、リップ部７０ａ及びリップ部７０ｂ間が確実にシールされるとともに、基板Ｗが保持される。 When the first holding member 65 and the second holding member 66 shown in FIG. 2 are locked, a short lip portion 70a on the inner peripheral surface side of the seal member 70 is formed on the surface of the substrate W as shown in FIG. The long lip portion 70b on the outer peripheral surface side is pressed against the surface of the first holding member 65. Accordingly, the gap between the lip portion 70a and the lip portion 70b is securely sealed, and the substrate W is held.
　シール部材７０でシールされた領域、即ちシール部材７０の一対のリップ部７０ａ，７０ｂで挟まれた領域において、導電体７３が電気接点７２の脚部７２ｂに電気的に接続され、且つ電気接点端部７２ａが基板Ｗのエッジ部上のシード層に接触する。これにより、基板Ｗをシール部材７０でシールしつつ基板ホルダ６０で保持した状態で、電気接点７２を介して基板Ｗに給電することができる。 In the region sealed by the seal member 70, that is, the region sandwiched between the pair of lip portions 70a and 70b of the seal member 70, the conductor 73 is electrically connected to the leg portion 72b of the electrical contact 72, and the electrical contact end The portion 72a contacts the seed layer on the edge portion of the substrate W. Accordingly, power can be supplied to the substrate W via the electrical contact 72 in a state where the substrate W is held by the substrate holder 60 while being sealed by the sealing member 70.
　上述したように、シード層が形成された基板Ｗには、予めレジストパターンが形成される。基板Ｗは、図１に示しためっき装置に搬送される前に、ＵＶの照射等が行われて、基板表面上のレジスト残渣が除去され（アッシング処理）且つレジスト表面の親水化処理（ディスカム処理）が行われる。アッシング処理及びディスカム処理が行われた基板Ｗは、その後めっき装置に搬送され、基板ホルダ６０に保持される。ここで、基板Ｗのレジストが塗布されていないエッジ部上のシード層には、アッシング処理及びディスカム処理からの時間経過によって、酸化膜が形成されたり、レジストから揮発した有機物が付着したりすることがある。図３に示すように電気接点７２は基板Ｗのエッジ部上に接触するので、基板Ｗのエッジ部上のシード層に酸化膜が形成されたり、有機物が付着したりすると、基板ホルダ６０の電気接点７２の接触抵抗にバラつきが生じ、めっき膜厚の均一性が悪化するという問題がある。 As described above, a resist pattern is formed in advance on the substrate W on which the seed layer is formed. Before the substrate W is transported to the plating apparatus shown in FIG. 1, UV irradiation or the like is performed to remove the resist residue on the substrate surface (ashing process), and the resist surface is hydrophilized (discum process). ) Is performed. The substrate W that has been subjected to the ashing process and the discaming process is then transferred to the plating apparatus and held by the substrate holder 60. Here, on the seed layer on the edge portion of the substrate W where the resist is not applied, an oxide film is formed or an organic substance volatilized from the resist adheres as time elapses from the ashing process and the discaming process. There is. As shown in FIG. 3, since the electrical contact 72 contacts the edge portion of the substrate W, if an oxide film is formed on the seed layer on the edge portion of the substrate W or an organic substance adheres, the electrical contact of the substrate holder 60 is performed. There is a problem that the contact resistance of the contact 72 varies and the uniformity of the plating film thickness deteriorates.
　そこで、本実施形態では、図１に示したアライナ４０に有機物脱離装置を設け、基板Ｗのエッジ部上のシード層に形成される有機物を脱離（除去）する。なお、本明細書において、基板Ｗのエッジ部とは、電気接点７２が接触し得る領域、又は基板ホルダ６０により基板Ｗが保持される際、シール部材７０が接触する部分よりも基板Ｗの周縁部側となる領域をいう。例えば、本実施形態においては、図３に示したシール部材７０のリップ部７０ａが当接する部分よりも外周側の領域をいい、基板Ｗの外周縁部から基板中心に向かって約５ｍｍの範囲内、より好ましくは、約２ｍｍの範囲内をいう。 Therefore, in this embodiment, the aligner 40 shown in FIG. 1 is provided with an organic substance desorbing device to desorb (remove) organic substances formed on the seed layer on the edge portion of the substrate W. In the present specification, the edge portion of the substrate W refers to a region where the electrical contact 72 can contact, or a periphery of the substrate W rather than a portion where the seal member 70 contacts when the substrate W is held by the substrate holder 60. An area on the part side. For example, in the present embodiment, it refers to a region on the outer peripheral side with respect to the portion where the lip portion 70a of the seal member 70 shown in FIG. More preferably, it is within the range of about 2 mm.
　図４は、図１に示したアライナ４０の概略上面図である。図５は、図４に示す矢視５－５におけるアライナ４０の概略断面図であり、図６は、図４に示す矢視６－６におけるアライナ４０の概略断面図である。図４ないし６に示すように、アライナ４０は、ベース４１と、回転ステージ４２と、アライナ光源４３と、光検出器４４と、有機物脱離装置４５（エッジ部洗浄装置の一例に相当する）と、を有する。 FIG. 4 is a schematic top view of the aligner 40 shown in FIG. 5 is a schematic cross-sectional view of the aligner 40 taken along the arrow 5-5 shown in FIG. 4, and FIG. 6 is a schematic cross-sectional view of the aligner 40 taken along the arrow 6-6 shown in FIG. As shown in FIGS. 4 to 6, the aligner 40 includes a base 41, a rotary stage 42, an aligner light source 43, a photodetector 44, and an organic substance detaching device 45 (corresponding to an example of an edge portion cleaning device). Have.
　回転ステージ４２は、基板Ｗの裏面を吸着するように構成され、基板Ｗを周方向に回転させる。なお、回転ステージ４２は、静電吸着式又は真空吸着式で基板Ｗを吸着する。アライナ光源４３は、回転ステージ４２によって回転される基板Ｗのエッジ部付近に光４６を照射するように構成される。基板Ｗが回転することにより、基板Ｗのノッチがアライナ光源４３からの光４６が照射される位置に移動したとき、光４６はノッチを通過して光検出器４４に到達する。光検出器４４が光４６を検出したとき、アライナ４０は、基板Ｗのノッチがアライナ光源４３の直下に位置することを認識することができ、基板Ｗの向きを整列させることができる。 The rotation stage 42 is configured to suck the back surface of the substrate W, and rotates the substrate W in the circumferential direction. The rotary stage 42 sucks the substrate W by an electrostatic suction type or a vacuum suction type. The aligner light source 43 is configured to irradiate light 46 near the edge portion of the substrate W rotated by the rotary stage 42. When the notch of the substrate W is moved to the position where the light 46 from the aligner light source 43 is irradiated by the rotation of the substrate W, the light 46 passes through the notch and reaches the photodetector 44. When the light detector 44 detects the light 46, the aligner 40 can recognize that the notch of the substrate W is located immediately below the aligner light source 43, and can align the orientation of the substrate W.
　有機物脱離装置４５は、ＵＶ照射装置又はプラズマ放射装置である。本実施形態では、基板Ｗの上方から、基板Ｗのエッジ部に局所的にＵＶ又はプラズマを適用できるように構成されている。有機物脱離装置４５は、基板ホルダ６０に保持される前の基板Ｗのエッジ部に局所的にＵＶ又はプラズマを適用することができる。言い換えれば、基板Ｗのエッジ部以外の領域は、ＵＶ又はプラズマに曝されない。回転ステージ４２によって基板Ｗを回転することにより、基板Ｗのエッジ部全周に亘ってＵＶ又はプラズマを効率的に適用することができる。基板Ｗのエッジ部に付着した有機物にＵＶ又はプラズマを照射すると、有機物が分解されて揮発性物質が生成され、揮発性物質となった有機物は揮発して除去される。ＵＶ照射装置のＵＶ照射源又はプラズマ放射装置のプラズマ放射口と基板Ｗとの距離は、約１ｍｍ以上約１０ｍｍ以下とすることが好ましい。この距離が１ｍｍ未満であると、基板とＵＶ照射源又はプラズマ放射装置のプラズマ放射口とが物理的に接触する可能性がある。また、この距離を１０ｍｍ超とすると、局所的にＵＶ又はプラズマを照射できない可能性がある。基板とＵＶ照射源又はプラズマ放射装置のプラズマ放射口とをより確実に物理的に接触させることなく、また、局所的に照射できるようにするためには、この距離を約２ｍｍ以上約５ｍｍ以下とすることがより好ましい。 The organic substance detachment device 45 is a UV irradiation device or a plasma radiation device. In the present embodiment, UV or plasma can be locally applied to the edge portion of the substrate W from above the substrate W. The organic substance desorbing device 45 can locally apply UV or plasma to the edge portion of the substrate W before being held by the substrate holder 60. In other words, the region other than the edge portion of the substrate W is not exposed to UV or plasma. By rotating the substrate W by the rotating stage 42, UV or plasma can be efficiently applied over the entire periphery of the edge portion of the substrate W. When UV or plasma is irradiated to the organic substance attached to the edge portion of the substrate W, the organic substance is decomposed to generate a volatile substance, and the organic substance that has become the volatile substance is volatilized and removed. The distance between the UV irradiation source of the UV irradiation apparatus or the plasma radiation port of the plasma radiation apparatus and the substrate W is preferably about 1 mm or more and about 10 mm or less. If this distance is less than 1 mm, there is a possibility that the substrate and the UV radiation source or the plasma radiation port of the plasma radiation device are in physical contact. If this distance exceeds 10 mm, UV or plasma may not be locally irradiated. In order to make it possible to irradiate the substrate and the UV irradiation source or the plasma radiation port of the plasma radiation apparatus more securely without being brought into physical contact with each other, this distance is set to about 2 mm or more and about 5 mm or less. More preferably.
　有機物脱離装置４５がＵＶ照射装置である場合において、ＵＶ光源としては、例えば、高圧水銀ランプ、低圧水銀ランプ、ブラックライト、又はＵＶ領域の光を放射可能なレーザー光源等を採用することができる。高圧水銀ランプ、低圧水銀ランプ、及びブラックライトは光が発散する傾向を有するので、これらの光源を採用する場合は、光源を基板Ｗの近傍に設置するか、光学系を用いてエッジ部のみにＵＶを照射するようにすることが好ましい。有機物脱離装置４５がプラズマ放射装置である場合は、例えば大気リモートプラズマ装置等を採用することができる。 When the organic substance detachment device 45 is a UV irradiation device, as the UV light source, for example, a high pressure mercury lamp, a low pressure mercury lamp, a black light, or a laser light source capable of emitting light in the UV region can be employed. . High-pressure mercury lamps, low-pressure mercury lamps, and black lights tend to diverge light, so when using these light sources, install the light source near the substrate W or use only an optical system at the edge. It is preferable to irradiate UV. When the organic substance desorbing device 45 is a plasma radiation device, for example, an atmospheric remote plasma device or the like can be employed.
　アライナ４０は、さらに、基板Ｗのエッジ部に、エッジ部の上方から紫外領域（２００ｎｍから３８０ｎｍ）の光、例えば３６５ｎｍの波長を有する光を励起光として基板Ｗのエッジ部に対して照射し、エッジ部からの反射光を見ることで、吸光度を測定するように構成されたセンサ（分光光度計）、又は蛍光領域の光を照射してその反射光の強度をモニタするためのセンサ（蛍光反射膜厚計）を備えてもよい。 The aligner 40 further irradiates the edge portion of the substrate W as excitation light with light in the ultraviolet region (200 nm to 380 nm), for example, light having a wavelength of 365 nm, from above the edge portion to the edge portion of the substrate W. A sensor (spectrophotometer) configured to measure the absorbance by observing the reflected light from the edge portion, or a sensor for irradiating light in the fluorescent region and monitoring the intensity of the reflected light (fluorescent reflection) A film thickness meter) may be provided.
　このセンサ（不図示）は、有機物脱離装置４５に設けても良いし、アライナ４０に別途設けても良い。本実施形態に係るめっき装置の制御部は、このセンサにより測定された吸光度又は蛍光強度の値が、予め設定した閾値よりも大きい値か否かによって、エッジ部の汚染物質（有機物及び酸化膜を含む）が十分に除去されているか否かを判定することができるように構成されている。例えば、エッジ部の汚染物質が十分に除去されていないと判定された場合は、有機物脱離装置４５は、基板Ｗのエッジ部に局所的にＵＶ又はプラズマを放射する工程を繰り返し実施してもよい。また、エッジ部の汚染物質が十分に除去されていると判定された場合には、有機物の脱離が完了したものとして、基板Ｗは、基板搬送装置１２２によってフィキシングユニット１２０に搬送されて、これに続く一連のめっき処理が実施される。このように、基板Ｗのエッジ部に汚染物質が存在しているかいないかをめっき処理前に判定し、その後、エッジ部に汚染物質が残存していない基板についてめっき処理を行うようにすることで、基板ホルダ６０が有する電気接点の接触抵抗のばらつきに起因する基板Ｗのめっき膜厚の面内均一性の悪化等を、より確実に防止できる。 This sensor (not shown) may be provided in the organic substance detachment device 45 or may be provided separately in the aligner 40. The control unit of the plating apparatus according to the present embodiment determines the contaminants (organic matter and oxide film) at the edge depending on whether the absorbance or fluorescence intensity value measured by this sensor is greater than a preset threshold value. It is configured so that it can be determined whether or not (including) is sufficiently removed. For example, when it is determined that the contaminants at the edge portion are not sufficiently removed, the organic substance detachment apparatus 45 may repeatedly perform the step of locally emitting UV or plasma to the edge portion of the substrate W. Good. If it is determined that the contaminants at the edge portion have been sufficiently removed, the substrate W is transported to the fixing unit 120 by the substrate transport device 122, assuming that the removal of the organic matter has been completed. Subsequently, a series of plating processes are performed. In this way, it is determined whether or not the contaminant is present on the edge portion of the substrate W before the plating process, and then the plating process is performed on the substrate on which the contaminant does not remain on the edge portion. Further, it is possible to more reliably prevent the deterioration of the in-plane uniformity of the plating film thickness of the substrate W caused by the variation in the contact resistance of the electrical contacts of the substrate holder 60.
　図７は、第１実施形態に係るめっき方法を示すフロー図である。本めっき方法では、まず、図１に示しためっき装置に基板Ｗを搬送する前に、基板Ｗにレジストパターンを形成する（ステップＳ６０１）。続いて、レジストパターンが形成された基板ＷにＵＶの照射を行い、基板Ｗ表面上のレジスト残渣を除去し（アッシング処理）且つレジスト表面の親水化処理（ディスカム処理）を行う（ステップＳ６０２）。ステップＳ６０１及びステップＳ６０２の処理は、図１に示しためっき装置以外の任意の装置において行われる。 FIG. 7 is a flowchart showing the plating method according to the first embodiment. In this plating method, first, a resist pattern is formed on the substrate W before the substrate W is transported to the plating apparatus shown in FIG. 1 (step S601). Subsequently, the substrate W on which the resist pattern is formed is irradiated with UV, the resist residue on the surface of the substrate W is removed (ashing treatment), and the resist surface is hydrophilized (discum treatment) (step S602). The processes in steps S601 and S602 are performed in an arbitrary apparatus other than the plating apparatus shown in FIG.
　続いて、基板Ｗを収容したフープ１０２から、基板搬送装置１２２によって、基板Ｗがアライナ４０へ搬送される。アライナ４０において、基板Ｗのエッジ部の洗浄が行われる（ステップＳ６０３）。具体的には、アライナ４０において、有機物脱離装置４５により基板Ｗのエッジ部に局所的にＵＶ又はプラズマが適用され、有機物が脱離される。なお、この時基板Ｗの向きがアライナ４０によって整列される。 Subsequently, the substrate W is transported to the aligner 40 by the substrate transport device 122 from the FOUP 102 containing the substrate W. In the aligner 40, the edge portion of the substrate W is cleaned (step S603). Specifically, in the aligner 40, UV or plasma is locally applied to the edge portion of the substrate W by the organic substance desorbing device 45, and the organic substance is desorbed. At this time, the orientation of the substrate W is aligned by the aligner 40.
　図７に示すフローには記載されていないが、アライナ４０にセンサ（不図示）を設けた場合には、基板Ｗのエッジ部に存在した有機物及び酸化膜の少なくともいずれか１つにＵＶ又はプラズマを適用して局所的に除去した後に、エッジ部の汚染物質（有機物及び酸化膜を含む）の有無を確認することができる。具体的には、まず、アライナ４０に配置された基板Ｗの表面の上方にセンサ（分光光度計又は蛍光反射膜厚計）を位置させる。アライナ４０により基板Ｗを回転又は静止させた状態で、センサを基板中心部からエッジ部へ（又はエッジ部から基板中心部へ）走査させながら、センサから基板Ｗの表面に向かって紫外領域（２００ｎｍから３８０ｎｍ）の光、例えば３６５ｎｍの波長の光を励起光として照射し、吸光度または蛍光強度を測定する。 Although not described in the flow shown in FIG. 7, when a sensor (not shown) is provided in the aligner 40, UV or plasma is applied to at least one of the organic substance and the oxide film present on the edge portion of the substrate W. After applying and removing locally, the presence or absence of contaminants (including organic substances and oxide films) at the edge portion can be confirmed. Specifically, first, a sensor (spectrophotometer or fluorescent reflection film thickness meter) is positioned above the surface of the substrate W disposed on the aligner 40. While the substrate W is rotated or stationary by the aligner 40, the sensor is scanned from the center of the substrate to the edge (or from the edge to the center of the substrate), and the ultraviolet region (200 nm) from the sensor toward the surface of the substrate W. To 380 nm), for example, light having a wavelength of 365 nm is irradiated as excitation light, and the absorbance or fluorescence intensity is measured.
　基板表面には、ＵＶ又はプラズマ処理が行われたエッジ部と、ＵＶ又はプラズマ処理が行われていない被めっき面とが存在し、シード層は、基板表面の全域（被めっき面とエッジ部）に形成されている。そして、被めっき面とエッジ部にセンサを走査させることで、被めっき面とエッジ部の両方の吸光度又は蛍光強度を測定することができる。めっき装置の制御部は、例えば、この被めっき面とエッジ部の両方の吸光度を比較し、例えば被めっき面の吸光度に対するエッジ部の吸光度の比の値が予め設定した閾値（例えば５０％以下）より大きいか否かにより、エッジ部の汚染物質（有機物および酸化膜を含む）が十分に除去されているか否かを判定することができる。上記比の値が閾値より大きい場合は、エッジ部の汚染物質（有機物および酸化膜を含む）は十分に除去されていないと判定できる。また、上記比の値が閾値より大きくない場合はエッジ部の汚染物質（有機物および酸化膜を含む）は十分に除去されていると判定できる。蛍光強度を測定する場合も、同様に所定の閾値と測定値とを比較することで、エッジ部の汚染物質が十分に除去されているか否かを判定することができる。 The substrate surface has an edge portion that has been subjected to UV or plasma treatment and a surface to be plated that has not been subjected to UV or plasma treatment, and the seed layer is the entire surface of the substrate (the surface to be plated and the edge portion). Is formed. And by making a sensor scan a to-be-plated surface and an edge part, the light absorbency or fluorescence intensity of both a to-be-plated surface and an edge part can be measured. The control unit of the plating apparatus, for example, compares the absorbances of both the plated surface and the edge portion, and for example, the ratio of the absorbance of the edge portion to the absorbance of the plated surface is a preset threshold value (for example, 50% or less). It can be determined whether or not the contaminants (including organic matter and oxide film) at the edge portion are sufficiently removed depending on whether or not it is larger. When the value of the ratio is larger than the threshold value, it can be determined that the contaminants (including organic substances and oxide film) at the edge portion are not sufficiently removed. When the value of the ratio is not larger than the threshold value, it can be determined that the contaminants (including organic substances and oxide film) at the edge are sufficiently removed. Similarly, when the fluorescence intensity is measured, it is possible to determine whether or not the contaminants at the edge portion are sufficiently removed by comparing the predetermined threshold value with the measured value.
　この判定に基づき、エッジ部の汚染物質が十分に除去されていないと判定された場合は、基板Ｗのエッジ部に局所的にＵＶ又はプラズマを放射する工程を繰り返し実施してもよい。また、エッジ部の汚染物質が十分に除去されていると判定された場合は、有機物の脱離が完了したものとして、基板搬送装置１２２によってフィキシングユニット１２０に搬送され、一連のめっき処理が実施される。このように、基板Ｗのエッジ部に汚染物質が存在しているかいないかをめっき処理前に判定し、その後、エッジ部に汚染物質が残存していない基板についてめっき処理を行うようにすることで、基板ホルダ６０が有する電気接点の接触抵抗のばらつきに起因する基板Ｗのめっき膜厚の面内均一性の悪化等を、より確実に防止できる。 Based on this determination, if it is determined that the contaminants at the edge portion are not sufficiently removed, the step of locally radiating UV or plasma to the edge portion of the substrate W may be repeated. If it is determined that the contaminants at the edge are sufficiently removed, it is assumed that the removal of the organic matter has been completed, and the substrate is transferred to the fixing unit 120 by the substrate transfer device 122, and a series of plating processes are performed. The In this way, it is determined whether or not the contaminant is present on the edge portion of the substrate W before the plating process, and then the plating process is performed on the substrate on which the contaminant does not remain on the edge portion. Further, it is possible to more reliably prevent the deterioration of the in-plane uniformity of the plating film thickness of the substrate W caused by the variation in the contact resistance of the electrical contacts of the substrate holder 60.
　エッジ部の洗浄が行われた基板Ｗは、基板搬送装置１２２によってフィキシングユニット１２０に搬送され、基板ホルダ６０にセットされる（ステップＳ６０４）。このとき、基板Ｗのエッジ部の有機物は脱離されているので、基板ホルダ６０の電気接点は、洗浄された基板Ｗのエッジ部と接触する。これにより、有機物の付着に起因する基板ホルダ６０の電気接点の接触抵抗のバラつきを低減することができる。 The substrate W on which the edge portion has been cleaned is transported to the fixing unit 120 by the substrate transport device 122 and set on the substrate holder 60 (step S604). At this time, since the organic substance at the edge portion of the substrate W is detached, the electrical contact of the substrate holder 60 contacts the edge portion of the cleaned substrate W. Thereby, the dispersion | variation in the contact resistance of the electrical contact of the board | substrate holder 60 resulting from adhesion of organic substance can be reduced.
　基板ホルダ６０に保持された基板Ｗは、基板ホルダ搬送装置１４０により、まずプリウェット槽１２６に搬送され、プリウェット槽１２６に収容された純水に基板Ｗが浸漬される（ステップＳ６０５）。続いて、基板Ｗは、プリソーク槽１２８に搬送され、基板Ｗの表面が酸洗浄される（ステップＳ６０６）。具体的には、プリソーク槽１２８に収容された硫酸や硝酸等の薬液に基板Ｗが浸漬され、基板の表面に形成されたシード層の表面の酸化膜がエッチング除去される。 The substrate W held on the substrate holder 60 is first transferred to the pre-wet tank 126 by the substrate holder transfer device 140, and the substrate W is immersed in pure water stored in the pre-wet tank 126 (step S605). Subsequently, the substrate W is transported to the pre-soak tank 128, and the surface of the substrate W is subjected to acid cleaning (step S606). Specifically, the substrate W is immersed in a chemical solution such as sulfuric acid or nitric acid stored in the pre-soak tank 128, and the oxide film on the surface of the seed layer formed on the surface of the substrate is removed by etching.
　図７に示すフローには記載されていないが、酸洗浄された基板Ｗは、その後第１洗浄槽１３０ａに収容された純水に浸漬されて、基板Ｗ表面に付着した薬液が洗浄されてもよい。続いて、基板Ｗは、めっき槽１０のいずれかのめっきセル１３４に浸漬されて、めっき処理が行われる（ステップＳ６０７）。表面にめっき膜が形成された基板Ｗには、ＱＤＲ（Ｑｕｉｃｋ　Ｄａｍｐ　Ｒｉｎｓｅ）処理が行われる（ステップＳ６０８）。具体的には、基板Ｗは、第２洗浄槽１３０ｂに収容された純水に浸漬されて、基板Ｗ表面に付着しためっき液が洗浄される。 Although not shown in the flow shown in FIG. 7, the acid-cleaned substrate W is then immersed in pure water stored in the first cleaning tank 130a, and the chemical solution adhering to the surface of the substrate W is cleaned. Good. Subsequently, the substrate W is immersed in one of the plating cells 134 of the plating tank 10 and a plating process is performed (step S607). A QDR (Quick Damp Rinse) process is performed on the substrate W having a plating film formed on the surface (step S608). Specifically, the substrate W is immersed in pure water accommodated in the second cleaning tank 130b, and the plating solution adhering to the surface of the substrate W is cleaned.
　続いて、基板ホルダ６０に保持された基板Ｗはフィキシングユニット１２０に搬送され、基板ホルダ６０から基板Ｗが取り外される。基板搬送装置１２２は、フィキシングユニット１２０から基板Ｗを受け取り、スピンリンスドライヤ２０に基板Ｗを搬送する。基板Ｗは、スピンリンスドライヤ２０において、表面の洗浄及び乾燥が行われる（ステップＳ６０９）。 Subsequently, the substrate W held on the substrate holder 60 is transported to the fixing unit 120, and the substrate W is removed from the substrate holder 60. The substrate transfer device 122 receives the substrate W from the fixing unit 120 and transfers the substrate W to the spin rinse dryer 20. The surface of the substrate W is cleaned and dried in the spin rinse dryer 20 (step S609).
　以上で説明したように、本実施形態によれば、基板ホルダ６０にセットされる前に、基板Ｗのエッジ部に存在する有機物を局所的に除去することができる。したがって、基板Ｗの表面に形成されたレジストパターンに悪影響を与えることなく、基板Ｗのエッジ部に存在する有機物に起因する基板ホルダ６０の電気接点７２の接触抵抗のバラつきを抑制し、めっき膜厚の均一性の悪化を防止することができる。 As described above, according to the present embodiment, before the substrate holder 60 is set, organic substances present on the edge portion of the substrate W can be locally removed. Therefore, variation in the contact resistance of the electrical contact 72 of the substrate holder 60 caused by organic substances present at the edge portion of the substrate W is suppressed without adversely affecting the resist pattern formed on the surface of the substrate W, and the plating film thickness is reduced. It is possible to prevent the deterioration of the uniformity.
　また、本実施形態によれば、基板Ｗのエッジ部に局所的にＵＶ又はプラズマを放射することができる。これにより、基板Ｗのエッジ部以外の表面、即ち基板Ｗ上のレジストが塗布されている部分にはＵＶ又はプラズマを放射することがないので、レジストにダメージを与えることなく、基板Ｗのエッジ部の有機物を脱離させることができる。 Further, according to the present embodiment, UV or plasma can be locally emitted to the edge portion of the substrate W. As a result, UV or plasma is not emitted to the surface other than the edge portion of the substrate W, that is, the portion where the resist is coated on the substrate W, so that the edge portion of the substrate W does not damage the resist. The organic matter can be eliminated.
　また、本実施形態によれば、有機物脱離装置４５がアライナ４０に設けられるので、アライナ４０により基板を回転させつつ、ＵＶ照射装置又はプラズマ照射装置で基板Ｗのエッジ部を処理することができる。したがって、有機物脱離装置４５に基板を回転させる機構を設ける必要がないので、コストを低減することができる。また、有機物脱離装置４５をアライナ４０に設けることで、めっき装置全体のフットプリントを低減することもできる。 Moreover, according to this embodiment, since the organic substance detachment device 45 is provided in the aligner 40, the edge portion of the substrate W can be processed by the UV irradiation device or the plasma irradiation device while rotating the substrate by the aligner 40. . Therefore, it is not necessary to provide a mechanism for rotating the substrate in the organic substance desorbing device 45, so that the cost can be reduced. Moreover, the footprint of the whole plating apparatus can also be reduced by providing the organic substance detaching apparatus 45 in the aligner 40.
　なお、有機物脱離装置４５をアライナ４０とは別にめっき装置に設けてもよい。図８は、第１実施形態に係る他の例のめっき装置の全体配置図である。図８に示すように、有機物脱離装置４５は、アライナ４０とは別に、ロード／アンロード部１７０Ａ内に設けられる。この場合、アライナ４０は、図４ないし図６に示した構成から有機物脱離装置４５を除いた構成を有する。一方、有機物脱離装置４５は、基板Ｗを回転させるための図４ないし６に示した回転ステージ４２と同様の機構を有する必要がある。図８に示すめっき装置によれば、有機物脱離装置４５がアライナ４０とは別に設けられるので、複数の基板Ｗに対して有機物脱離装置４５の処理とアライナ４０との処理をそれぞれ別々に行うことができる。そこで、有機物脱離処理に時間を要していることによって、処理全体のスループットが有機物脱離処理の処理時間で決められているような場合には、図１に示すめっき装置に比べてスループットを向上させることができる。なお、有機物脱離装置４５は、スピンリンスドライヤ２０に設けることもできる。この場合であっても、スピンリンスドライヤ２０に、吸光度を測定するように構成されたセンサ（分光光度計）、又は蛍光領域の光を照射してその反射光の強度をモニタするためのセンサ（蛍光反射膜厚計）を設けてもよい（不図示）。その場合、エッジ部の洗浄中又は洗浄後の基板Ｗのエッジ部の上方にセンサを位置させる。そして、基板Ｗを回転させ、このセンサから基板Ｗのエッジ部に光を照射して、基板Ｗから反射する光をセンサの受光部にて受光し、この反射光の蛍光強度又は吸光度を測定する。これにより、基板Ｗのエッジ部における汚染物質（有機物及び酸化膜の少なくとも１つ）が十分に除去されたか否かを判定するようにしてもよい。このようにすることで、基板Ｗのエッジ部に汚染物質が存在しているかいないかをめっき処理を行う前に判定し、その後、エッジ部に汚染物質が残存していない基板についてめっき処理を行うようにすることができるので、基板ホルダ６０が有する電気接点の接触抵抗のばらつきに起因する基板Ｗのめっき膜厚の面内均一性の悪化等を、より確実に防止できる。なお、基板Ｗのエッジ部の洗浄中に基板Ｗのエッジ部に汚染物質が存在しているか否かを判定するようにした場合には、洗浄の終点を、このセンサの判定結果に基づいて決定することもできる。 Note that the organic substance desorbing device 45 may be provided in the plating apparatus separately from the aligner 40. FIG. 8 is an overall layout diagram of another example of a plating apparatus according to the first embodiment. As shown in FIG. 8, the organic substance desorbing device 45 is provided in the load / unload unit 170 </ b> A separately from the aligner 40. In this case, the aligner 40 has a configuration in which the organic substance detaching device 45 is removed from the configuration shown in FIGS. On the other hand, the organic substance detachment apparatus 45 needs to have a mechanism similar to that of the rotation stage 42 shown in FIGS. 4 to 6 for rotating the substrate W. According to the plating apparatus shown in FIG. 8, since the organic substance desorbing device 45 is provided separately from the aligner 40, the process of the organic substance desorbing apparatus 45 and the process of the aligner 40 are separately performed on a plurality of substrates W. be able to. Therefore, when the organic substance desorption process requires time, and the throughput of the entire process is determined by the processing time of the organic substance desorption process, the throughput is higher than that of the plating apparatus shown in FIG. Can be improved. The organic substance detaching device 45 can also be provided in the spin rinse dryer 20. Even in this case, a sensor (spectrophotometer) configured to measure the absorbance to the spin rinse dryer 20 or a sensor for irradiating the light in the fluorescent region and monitoring the intensity of the reflected light ( A fluorescent reflection film thickness meter may be provided (not shown). In that case, the sensor is positioned above the edge portion of the substrate W during or after the cleaning of the edge portion. Then, the substrate W is rotated, light is emitted from the sensor to the edge portion of the substrate W, light reflected from the substrate W is received by the light receiving portion of the sensor, and the fluorescence intensity or absorbance of the reflected light is measured. . Thereby, it may be determined whether the contaminant (at least one of the organic substance and the oxide film) at the edge portion of the substrate W has been sufficiently removed. By doing in this way, it is determined before performing the plating process whether or not the contaminant is present in the edge portion of the substrate W, and thereafter, the plating process is performed on the substrate in which the contaminant does not remain in the edge portion. Therefore, it is possible to more reliably prevent deterioration of the in-plane uniformity of the plating film thickness of the substrate W caused by variations in the contact resistance of the electrical contacts of the substrate holder 60. When it is determined whether or not contaminants are present at the edge portion of the substrate W during the cleaning of the edge portion of the substrate W, the end point of the cleaning is determined based on the determination result of this sensor. You can also
＜第２実施形態＞
　図９は、第２実施形態に係るめっき装置の全体配置図である。第２実施形態は、第１実施形態の図１に示しためっき装置と比べて、スピンリンスドライヤ２０及びアライナ４０の構成が異なる。その他の構成は第１実施形態と同様であるので、第１実施形態と同様の構成については同一の符号を付して説明を省略する。 <Second Embodiment>
FIG. 9 is an overall layout diagram of the plating apparatus according to the second embodiment. The second embodiment differs from the plating apparatus shown in FIG. 1 of the first embodiment in the configuration of the spin rinse dryer 20 and the aligner 40. Since other configurations are the same as those of the first embodiment, the same configurations as those of the first embodiment are denoted by the same reference numerals and description thereof is omitted.
　第２実施形態においては、アライナ４０は、第１実施形態で説明した有機物脱離装置４５を備えていない。また、スピンリンスドライヤ２０は、基板ホルダ６０にセットされる前の基板のエッジ部に存在する酸化膜を局所的に除去する酸化膜除去装置を有する。 In the second embodiment, the aligner 40 does not include the organic substance desorbing device 45 described in the first embodiment. Further, the spin rinse dryer 20 has an oxide film removing device that locally removes an oxide film present on the edge portion of the substrate before being set on the substrate holder 60.
　図１０は、酸化膜除去装置を備えたスピンリンスドライヤ２０を示す概略図である。図示のように、スピンリンスドライヤ２０は、回転ステージ２１と、基板チャック２２と、ＤＩＷノズル２３と、酸化膜除去装置２４（エッジ部洗浄装置の一例に相当する）と、を有する。基板チャック２２は、基板Ｗの外周部を把持するように構成される。回転ステージ２１は、基板チャック２２を回転するように構成され、基板チャック２２が回転することにより、把持された基板Ｗを周方向に回転する。ＤＩＷノズル２３は、基板Ｗの略中央部にＤＩＷ（Ｄｅ－ｉｏｎｉｚｅｄ　Ｗａｔｅｒ）を供給するように構成される。基板Ｗに供給されたＤＩＷは、基板Ｗの回転により遠心力を受けて、基板Ｗの外周部に向かって流れる。スピンリンスドライヤ２０は、図示されていないが、基板ＷのＤＩＷが外部に飛散することを防止するために、基板Ｗの周囲を覆うカバーを有する。 FIG. 10 is a schematic view showing a spin rinse dryer 20 equipped with an oxide film removing device. As shown in the figure, the spin rinse dryer 20 includes a rotary stage 21, a substrate chuck 22, a DIW nozzle 23, and an oxide film removing device 24 (corresponding to an example of an edge portion cleaning device). The substrate chuck 22 is configured to grip the outer periphery of the substrate W. The rotation stage 21 is configured to rotate the substrate chuck 22, and rotates the gripped substrate W in the circumferential direction when the substrate chuck 22 rotates. The DIW nozzle 23 is configured to supply DIW (De-ionized Water) to a substantially central portion of the substrate W. The DIW supplied to the substrate W receives centrifugal force due to the rotation of the substrate W and flows toward the outer periphery of the substrate W. Although not illustrated, the spin rinse dryer 20 has a cover that covers the periphery of the substrate W in order to prevent the DIW of the substrate W from scattering outside.
　酸化膜除去装置２４は、基板に薬液２８を供給する薬液供給装置であり、薬液２８を供給するように構成された薬液ノズル２５と、薬液ノズル２５に接続されたアーム２６と、アーム２６を旋回するように構成された回転軸２７とを有する。薬液ノズル２５の先端と基板Ｗとの距離は、約１ｍｍ以上約１０ｍｍ以下とすることが好ましい。この距離が１ｍｍ未満であると、基板と薬液ノズル２５とが物理的に接触する可能性がある。また、この距離を１０ｍｍ超とすると、局所的に薬液を供給できない可能性がある。基板と薬液ノズル２５とをより確実に物理的に接触させることなく、また、局所的に薬液を供給できるようにするためには、薬液ノズル２５の先端と基板との距離を約２ｍｍ以上約５ｍｍ以下とすることがより好ましい。 The oxide film removing device 24 is a chemical solution supply device that supplies the chemical solution 28 to the substrate. The chemical solution nozzle 25 is configured to supply the chemical solution 28, the arm 26 is connected to the chemical solution nozzle 25, and the arm 26 is turned. And a rotating shaft 27 configured to do so. The distance between the tip of the chemical nozzle 25 and the substrate W is preferably about 1 mm or more and about 10 mm or less. If this distance is less than 1 mm, the substrate and the chemical nozzle 25 may be in physical contact. If this distance exceeds 10 mm, there is a possibility that the chemical solution cannot be supplied locally. In order to make it possible to supply the chemical solution locally without more reliably bringing the substrate and the chemical solution nozzle 25 into physical contact with each other, the distance between the tip of the chemical solution nozzle 25 and the substrate is about 2 mm or more and about 5 mm. More preferably, it is as follows.
　酸化膜除去装置２４で基板Ｗのエッジ部に存在する酸化膜を局所的に除去するためには、まず、酸化膜除去装置２４は、基板Ｗの直径に応じてアーム２６を旋回し、薬液ノズル２５を基板Ｗのエッジ部の上方に位置させる。薬液ノズル２５が基板Ｗのエッジ部の上方に位置した状態で、回転する基板Ｗの略中央部にＤＩＷノズル２３からＤＩＷを供給するとともに、回転する基板Ｗのエッジ部に薬液２８を噴出する。薬液２８は基板Ｗのエッジ部に供給されるとともに、基板Ｗの回転により遠心力を受けて基板Ｗの外周部に向かって流れる。これにより、酸化膜除去装置２４は、基板Ｗのエッジ部に局所的に薬液２８を供給することができる。言い換えれば、実質的に基板Ｗのエッジ部以外の領域は、薬液２８に曝されない。回転ステージ２１が基板Ｗを回転することにより、基板Ｗのエッジ部全周に亘って薬液２８を効率的に供給することができる。基板Ｗのエッジ部に形成された酸化膜に薬液２８が供給されると、酸化膜は薬液２８により溶解し、除去される。所定時間薬液２８を供給した後、薬液２８の供給は停止され、ＤＩＷの供給が継続される。これにより、基板Ｗのエッジ部に供給された薬液２８が洗い流される。ここで、基板Ｗのエッジ部とは、前述したように電気接点７２が接触しうる領域、又は基板ホルダ６０により基板Ｗが保持される際、基板Ｗがシール部材７０が接触する部分よりも基板Ｗの周縁部側となる領域である。ただし、薬液を基板に対してスポット的に供給する際に、一部の薬液が飛散し得ることをあらかじめ想定して、レジストパターンに悪影響を与えにくい薬液成分・濃度としたうえで、基板Ｗのエッジ部の周辺部にある酸化膜を薬液２８により溶解し、除去するように構成することもできる。 In order to locally remove the oxide film existing at the edge portion of the substrate W by the oxide film removing device 24, the oxide film removing device 24 first turns the arm 26 according to the diameter of the substrate W, and then the chemical solution nozzle. 25 is positioned above the edge of the substrate W. With the chemical nozzle 25 positioned above the edge portion of the substrate W, DIW is supplied from the DIW nozzle 23 to the substantially central portion of the rotating substrate W, and the chemical solution 28 is ejected to the edge portion of the rotating substrate W. The chemical liquid 28 is supplied to the edge portion of the substrate W and flows toward the outer peripheral portion of the substrate W by receiving a centrifugal force by the rotation of the substrate W. As a result, the oxide film removing device 24 can locally supply the chemical solution 28 to the edge portion of the substrate W. In other words, the region other than the edge portion of the substrate W is not exposed to the chemical liquid 28 substantially. When the rotary stage 21 rotates the substrate W, the chemical liquid 28 can be efficiently supplied over the entire periphery of the edge portion of the substrate W. When the chemical solution 28 is supplied to the oxide film formed on the edge portion of the substrate W, the oxide film is dissolved and removed by the chemical solution 28. After supplying the chemical liquid 28 for a predetermined time, the supply of the chemical liquid 28 is stopped and the supply of DIW is continued. As a result, the chemical solution 28 supplied to the edge portion of the substrate W is washed away. Here, the edge portion of the substrate W is a region where the electrical contact 72 can contact as described above, or a portion where the substrate W contacts the seal member 70 when the substrate W is held by the substrate holder 60. This is a region on the peripheral edge side of W. However, when supplying the chemical solution spot-wise to the substrate, it is assumed in advance that a part of the chemical solution may be scattered, and the chemical component / concentration that does not adversely affect the resist pattern is used. The oxide film in the peripheral portion of the edge portion may be dissolved and removed by the chemical solution 28.
　薬液２８としては、例えば希硫酸、クエン酸等の、基板Ｗ上のシード層にダメージを与え難い酸が採用され得る。本実施形態では、薬液２８は、３ｗｔ％以上１５ｗｔ％以下の希硫酸又は２ｗｔ％以上２０ｗｔ％以下のクエン酸であることが好ましい。希硫酸が３ｗｔ％未満又はクエン酸が２ｗｔ％未満であると、酸濃度が低すぎて、酸化膜を適切に除去することができない虞がある。また、希硫酸が１５ｗｔ％超又はクエン酸が２０ｗｔ％超であると、酸濃度が高すぎて、基板のエッジ部上のシード層を溶かしてしまう虞がある。 As the chemical solution 28, for example, an acid that hardly damages the seed layer on the substrate W, such as dilute sulfuric acid or citric acid, can be used. In the present embodiment, the chemical liquid 28 is preferably 3 wt% or more and 15 wt% or less of dilute sulfuric acid or 2 wt% or more and 20 wt% or less of citric acid. If dilute sulfuric acid is less than 3 wt% or citric acid is less than 2 wt%, the acid concentration may be too low to remove the oxide film properly. Further, if the diluted sulfuric acid exceeds 15 wt% or the citric acid exceeds 20 wt%, the acid concentration may be too high and the seed layer on the edge portion of the substrate may be dissolved.
　図１１は、第２実施形態に係るめっき方法を示すフロー図である。第２実施形態に係るめっき方法は、一部を除いて図７に示しためっき方法と多くの点で一致する。したがって、図７のめっき方法と同一の部分の説明は一部省略する。 FIG. 11 is a flowchart showing a plating method according to the second embodiment. The plating method according to the second embodiment is the same as the plating method shown in FIG. Therefore, the description of the same part as the plating method of FIG. 7 is partially omitted.
　ステップＳ６０２でアッシング処理及びディスカム処理が行われた基板Ｗは、図９に示しためっき装置に搬送される。続いて、基板Ｗを収容したフープ１０２から、基板搬送装置１２２によって、基板Ｗがスピンリンスドライヤ２０へ搬送される。スピンリンスドライヤ２０において、基板Ｗはエッジ部の洗浄が行われる（ステップＳ７０１）。具体的には、スピンリンスドライヤ２０において、基板Ｗのエッジ部に存在する酸化膜が酸化膜除去装置２４により除去される。 The substrate W that has been subjected to the ashing process and the discaming process in step S602 is transported to the plating apparatus shown in FIG. Subsequently, the substrate W is transported to the spin rinse dryer 20 by the substrate transport device 122 from the FOUP 102 containing the substrate W. In the spin rinse dryer 20, the edge portion of the substrate W is cleaned (step S701). Specifically, in the spin rinse dryer 20, the oxide film present at the edge portion of the substrate W is removed by the oxide film removing device 24.
　さらに、本実施形態においても、基板のエッジ部の状態を測定するために、基板Ｗのエッジ部に、エッジ部の上方から紫外領域（２００ｎｍから３８０ｎｍ）の光、例えば３６５ｎｍを励起光として照射し、エッジ部の吸光度を測定するように構成されたセンサ（分光光度計）、又は蛍光領域の光を照射してその反射光の強度をモニタするためのセンサ（蛍光反射膜厚計）をスピンリンスドライヤ２０に設けてもよい（不図示）。その場合、エッジ部の洗浄中又は洗浄後の基板Ｗのエッジ部の上方にセンサを位置させる。そして、基板Ｗを回転させ、このセンサから基板Ｗのエッジ部に光を照射して、基板Ｗから反射する光をセンサの受光部にて受光し、この反射光の蛍光強度又は吸光度を測定する。これにより基板Ｗのエッジ部における酸化膜が十分に除去されたか否かを判定し、エッジ部の状態を検査するようにしてもよい。このようにすることで、基板Ｗのエッジ部に汚染物質が存在しているかいないかをめっき処理を行う前に判定し、その後、エッジ部に汚染物質が残存していない基板についてめっき処理を行うようにすることができるので、基板ホルダ６０が有する電気接点の接触抵抗のばらつきに起因する基板Ｗのめっき膜厚の面内均一性の悪化等を、より確実に防止できる。 Furthermore, also in this embodiment, in order to measure the state of the edge portion of the substrate, the edge portion of the substrate W is irradiated with light in the ultraviolet region (200 nm to 380 nm), for example, 365 nm as excitation light from above the edge portion. Spin rinse a sensor (spectrophotometer) configured to measure the absorbance at the edge, or a sensor (fluorescence reflection film thickness meter) for irradiating light in the fluorescent region and monitoring the intensity of the reflected light You may provide in the dryer 20 (not shown). In that case, the sensor is positioned above the edge portion of the substrate W during or after the cleaning of the edge portion. Then, the substrate W is rotated, light is emitted from the sensor to the edge portion of the substrate W, light reflected from the substrate W is received by the light receiving portion of the sensor, and the fluorescence intensity or absorbance of the reflected light is measured. . Accordingly, it may be determined whether or not the oxide film at the edge portion of the substrate W has been sufficiently removed, and the state of the edge portion may be inspected. By doing in this way, it is determined before performing the plating process whether or not the contaminant is present in the edge portion of the substrate W, and thereafter, the plating process is performed on the substrate in which the contaminant does not remain in the edge portion. Therefore, it is possible to more reliably prevent deterioration of the in-plane uniformity of the plating film thickness of the substrate W caused by variations in the contact resistance of the electrical contacts of the substrate holder 60.
　エッジ部の洗浄（場合によっては洗浄及び検査）が行われた基板Ｗは、基板搬送装置１２２によってフィキシングユニット１２０に搬送され、基板ホルダ６０にセットされる（ステップＳ６０４）。このとき、基板Ｗのエッジ部の酸化膜は除去されているので、基板ホルダ６０の電気接点は、洗浄された基板Ｗのエッジ部と接触する。これにより、酸化膜に起因する基板ホルダ６０の電気接点の接触抵抗のバラつきを低減することができる。基板ホルダ６０にセットされた基板Ｗは、後段のステップＳ６０５～ステップＳ６０９において、処理される。 The substrate W on which the edge portion has been cleaned (in some cases, cleaning and inspection) is transferred to the fixing unit 120 by the substrate transfer device 122 and set on the substrate holder 60 (step S604). At this time, since the oxide film on the edge portion of the substrate W has been removed, the electrical contact of the substrate holder 60 contacts the edge portion of the cleaned substrate W. Thereby, the variation in the contact resistance of the electrical contact of the substrate holder 60 caused by the oxide film can be reduced. The substrate W set in the substrate holder 60 is processed in the subsequent steps S605 to S609.
　以上で説明したように、第２実施形態によれば、基板ホルダ６０にセットされる前に、基板のエッジ部に存在する酸化膜を局所的に除去することができる。したがって、基板Ｗの表面に形成されたレジストパターンに悪影響を与えることなく、基板Ｗのエッジ部に存在する酸化膜に起因する基板ホルダ６０の電気接点７２の接触抵抗のバラつきを抑制し、めっき膜厚の均一性の悪化を防止することができる。 As described above, according to the second embodiment, the oxide film present on the edge portion of the substrate can be locally removed before being set on the substrate holder 60. Therefore, variation in the contact resistance of the electrical contact 72 of the substrate holder 60 caused by the oxide film present at the edge portion of the substrate W is suppressed without adversely affecting the resist pattern formed on the surface of the substrate W, and the plating film Deterioration of thickness uniformity can be prevented.
　また、第２実施形態によれば、酸化膜除去装置２４がスピンリンスドライヤ２０に設けられるので、スピンリンスドライヤ２０により基板を回転させつつ、薬液２８で基板Ｗのエッジ部を処理することができる。したがって、酸化膜除去装置２４に基板を回転させる機構及び薬液２８の飛散を防止する機構を設ける必要がないので、コストを低減することができる。また、スピンリンスドライヤ２０は、基板Ｗ上の液体が飛散することを防止するカバーを有しているので、薬液ノズル２５が供給する薬液２８がスピンリンスドライヤ２０の外部に飛散することも防止することができる。さらに、酸化膜除去装置２４をスピンリンスドライヤ２０に設けることで、めっき装置全体のフットプリントを低減することもできる。 Further, according to the second embodiment, since the oxide film removing device 24 is provided in the spin rinse dryer 20, the edge portion of the substrate W can be processed with the chemical solution 28 while rotating the substrate by the spin rinse dryer 20. . Therefore, it is not necessary to provide the oxide film removing device 24 with a mechanism for rotating the substrate and a mechanism for preventing the chemical solution 28 from being scattered, so that the cost can be reduced. Further, since the spin rinse dryer 20 has a cover that prevents the liquid on the substrate W from splashing, the chemical solution 28 supplied by the chemical nozzle 25 is also prevented from splashing outside the spin rinse dryer 20. be able to. Furthermore, the footprint of the entire plating apparatus can be reduced by providing the oxide film removing device 24 in the spin rinse dryer 20.
　めっきされる基板Ｗ上にはシード層が形成されており、このシード層に薬液２８が付着したまま放置すると、シード層が溶ける虞がある。このため、めっきされる基板Ｗのエッジ以外の部分、例えば、レジストパターンの開口から露出されるシード層に薬液２８が付着した場合、薬液２８が残らないように十分な洗浄が必要になる。第２実施形態によれば、基板Ｗのエッジ部に局所的に薬液２８を供給することができる。これにより、レジストパターンの開口から露出されるシード層に薬液２８を付着させることなく、基板のエッジ部に形成された酸化膜を除去することができる。したがって、基板Ｗの全面に薬液２８を付着させた場合に比べて、基板Ｗの洗浄時間を大幅に短縮することができる。 A seed layer is formed on the substrate W to be plated. If the chemical solution 28 is left attached to the seed layer, the seed layer may be dissolved. For this reason, when the chemical liquid 28 adheres to a portion other than the edge of the substrate W to be plated, for example, the seed layer exposed from the opening of the resist pattern, sufficient cleaning is required so that the chemical liquid 28 does not remain. According to the second embodiment, the chemical liquid 28 can be locally supplied to the edge portion of the substrate W. Thus, the oxide film formed on the edge portion of the substrate can be removed without attaching the chemical liquid 28 to the seed layer exposed from the opening of the resist pattern. Therefore, the cleaning time of the substrate W can be greatly shortened as compared with the case where the chemical liquid 28 is adhered to the entire surface of the substrate W.
＜第３実施形態＞
　図１２は、第３実施形態にかかるめっき装置の全体配置図である。第３実施形態に係るめっき装置は、第１実施形態における図８に示しためっき装置におけるスピンリンスドライヤ２０を、第２実施形態に係る図１０に示したスピンリンスドライヤ２０に置換した構成を有する。その他の構成は第１実施形態の図８に示しためっき装置と同様であるので、第１実施形態と同様の構成については同一の符号を付して説明を省略する。 <Third Embodiment>
FIG. 12 is an overall layout diagram of the plating apparatus according to the third embodiment. The plating apparatus according to the third embodiment has a configuration in which the spin rinse dryer 20 in the plating apparatus shown in FIG. 8 in the first embodiment is replaced with the spin rinse dryer 20 shown in FIG. 10 according to the second embodiment. . Since other configurations are the same as those of the plating apparatus shown in FIG. 8 of the first embodiment, the same configurations as those of the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
　図１２に示すめっき装置は、図１０に示した酸化膜除去装置２４を備えたスピンリンスドライヤ２０と、有機物脱離装置４５とを有する。このため、本めっき装置は、基板Ｗのエッジ部に存在する有機物及び酸化膜の両方を、局所的に除去することができる。 The plating apparatus shown in FIG. 12 has a spin rinse dryer 20 provided with the oxide film removing apparatus 24 shown in FIG. For this reason, the present plating apparatus can locally remove both organic substances and oxide films present at the edge portion of the substrate W.
　図１３は、第３実施形態に係るめっき方法を示すフロー図である。第３実施形態に係るめっき方法は、図７に示しためっき方法に、図１１に示したステップＳ７０１を組み合わせた方法である。即ち、図１３に示すように、ステップＳ６０２でアッシング処理及びディスカム処理が行われた基板Ｗは、図１１に示しためっき装置に搬送される。続いて、基板Ｗを収容したフープ１０２から、基板搬送装置１２２によって、基板Ｗがアライナ４０へ搬送される。アライナ４０において、基板Ｗはエッジ部の洗浄が行われる（ステップＳ６０３）。具体的には、アライナ４０において、基板Ｗのエッジ部に存在する有機物が有機物脱離装置４５により脱離される。なお、この時基板Ｗの向きがアライナ４０によって整列される。なお、ここでのエッジ部とは、基板ホルダ６０により基板Ｗが保持される際、シール部材７０が接触する部分よりも基板Ｗの周縁部側となる領域であって、例えば、基板Ｗの外周縁部から基板中心に向かって約５ｍｍの範囲内、より好ましくは約２ｍｍの範囲内をいう。 FIG. 13 is a flowchart showing a plating method according to the third embodiment. The plating method according to the third embodiment is a method in which step S701 shown in FIG. 11 is combined with the plating method shown in FIG. That is, as shown in FIG. 13, the substrate W that has been subjected to the ashing process and the discaming process in step S602 is transported to the plating apparatus shown in FIG. Subsequently, the substrate W is transferred to the aligner 40 by the substrate transfer device 122 from the FOUP 102 containing the substrate W. In the aligner 40, the edge portion of the substrate W is cleaned (step S603). Specifically, in the aligner 40, organic substances present at the edge portion of the substrate W are desorbed by the organic substance desorbing device 45. At this time, the orientation of the substrate W is aligned by the aligner 40. Here, the edge portion is a region closer to the peripheral edge side of the substrate W than the portion with which the seal member 70 contacts when the substrate W is held by the substrate holder 60, for example, outside the substrate W. From the peripheral edge toward the center of the substrate, it is within a range of about 5 mm, more preferably within a range of about 2 mm.
　さらに、本実施形態においても、アライナ４０に、基板のエッジ部の状態を測定するために、基板Ｗのエッジ部に、エッジ部の上方から紫外領域（２００ｎｍから３８０ｎｍ）の光、例えば３６５ｎｍを励起光として照射し、エッジ部の吸光度を測定するように構成されたセンサ（分光光度計）、又は蛍光領域の光を照射してその反射光の強度をモニタするためのセンサ（蛍光反射膜厚計）を設けてもよい（不図示）。めっき装置の制御部は、このセンサにより測定された吸光度または蛍光強度の値が、予め設定した閾値よりも大きい値か否かによって、エッジ部の汚染物質（有機物及び酸化膜を含む）が十分に除去されているか否かを判定することができるように構成されている。その場合、エッジ部の洗浄中又は洗浄後の基板Ｗのエッジ部の上方にセンサを位置させる。そして、基板Ｗを回転させ、このセンサから基板Ｗのエッジ部に光を照射して、基板Ｗから反射する光をセンサの受光部にて受光し、この反射光の蛍光強度又は吸光度を測定する。これにより、基板Ｗのエッジ部における汚染物質（有機物及び酸化膜を含む）が十分に除去されたか否かを判定し、エッジ部に汚染物質が存在しているかいないかを判定するようにしてもよい。このようにすることで、基板Ｗのエッジ部に汚染物質が存在しているかいないかをめっき処理を行う前に判定し、その後、エッジ部に汚染物質が残存していない基板についてめっき処理を行うようにすることができるので、基板ホルダ６０が有する電気接点の接触抵抗のばらつきに起因する基板Ｗのめっき膜厚の面内均一性の悪化等を防止できる。さらに、基板Ｗのエッジ部の洗浄中に基板Ｗのエッジ部に汚染物質が存在しているかいないかを判定するようにした場合には、洗浄の終点を、このセンサの判定結果に基づいて決定することもできる。さらに、もともとエッジ部に異常がある基板Ｗの有無も、センサの測定結果に基づいて判定できる。 Furthermore, also in this embodiment, in order to measure the state of the edge portion of the substrate, the aligner 40 is excited to emit light in the ultraviolet region (200 nm to 380 nm), for example, 365 nm from above the edge portion. A sensor (spectrophotometer) configured to irradiate as light and measure the absorbance of the edge portion, or a sensor (fluorescent reflection film thickness meter) for irradiating light in the fluorescent region and monitoring the intensity of the reflected light ) May be provided (not shown). Depending on whether the absorbance or fluorescence intensity value measured by this sensor is greater than a preset threshold value, the plating unit control unit will sufficiently contain contaminants (including organic substances and oxide films) at the edge. It is configured to be able to determine whether or not it has been removed. In that case, the sensor is positioned above the edge portion of the substrate W during or after the cleaning of the edge portion. Then, the substrate W is rotated, light is emitted from the sensor to the edge portion of the substrate W, light reflected from the substrate W is received by the light receiving portion of the sensor, and the fluorescence intensity or absorbance of the reflected light is measured. . As a result, it is determined whether or not the contaminants (including the organic matter and the oxide film) at the edge portion of the substrate W are sufficiently removed, and it is determined whether or not the contaminant is present at the edge portion. Good. By doing in this way, it is determined before performing the plating process whether or not the contaminant is present in the edge portion of the substrate W, and thereafter, the plating process is performed on the substrate in which the contaminant does not remain in the edge portion. Therefore, it is possible to prevent deterioration of the in-plane uniformity of the plating film thickness of the substrate W caused by variations in the contact resistance of the electrical contacts of the substrate holder 60. Further, when it is determined whether or not contaminants are present on the edge portion of the substrate W during the cleaning of the edge portion of the substrate W, the end point of the cleaning is determined based on the determination result of this sensor. You can also Furthermore, the presence / absence of the substrate W having an abnormality in the edge portion can be determined based on the measurement result of the sensor.
　エッジ部の有機物が脱離された基板Ｗは続いて、基板搬送装置１２２によって、スピンリンスドライヤ２０へ搬送される。スピンリンスドライヤ２０において、基板Ｗはエッジ部の洗浄が行われる（ステップＳ７０１）。具体的には、スピンリンスドライヤ２０において、基板Ｗのエッジ部に存在する酸化膜が酸化膜除去装置２４により脱離される。なお、ここでのエッジ部とは、基板ホルダにより基板が保持される際、シール部材７０が接触する部分よりも基板Ｗの周縁部側となる領域をいい、例えば基板Ｗが３００ｍｍウェハの場合には基板Ｗの外周縁部から基板中心に向かって約５ｍｍの範囲内、より好ましくは約２ｍｍの範囲内をいうが、薬液の成分・濃度をレジストパターンに悪影響を与えにくい成分・濃度としたうえで、エッジ部周辺に存在する酸化膜をあわせて除去することもできる。 The substrate W from which the organic substance at the edge portion has been detached is then transferred to the spin rinse dryer 20 by the substrate transfer device 122. In the spin rinse dryer 20, the edge portion of the substrate W is cleaned (step S701). Specifically, in the spin rinse dryer 20, the oxide film present at the edge portion of the substrate W is detached by the oxide film removing device 24. Here, the edge portion refers to a region that is closer to the peripheral edge side of the substrate W than the portion with which the seal member 70 contacts when the substrate is held by the substrate holder. For example, when the substrate W is a 300 mm wafer Means within the range of about 5 mm from the outer peripheral edge of the substrate W toward the center of the substrate, more preferably within the range of about 2 mm. However, the component / concentration of the chemical solution is set to a component / concentration that does not adversely affect the resist pattern. Thus, the oxide film existing around the edge portion can be removed together.
　エッジ部の洗浄が行われた基板Ｗは、基板搬送装置１２２によってフィキシングユニット１２０に搬送され、基板ホルダ６０にセットされる（ステップＳ６０４）。このとき、基板Ｗのエッジ部の有機物及び酸化膜は除去されているので、基板ホルダ６０の電気接点は、洗浄された基板Ｗのエッジ部と接触する。これにより、有機物及び酸化膜に起因する基板ホルダ６０の電気接点の接触抵抗のバラつきを低減することができる。基板ホルダ６０にセットされた基板Ｗは、後段のステップＳ６０５～ステップＳ６０９において、処理される。 The substrate W on which the edge portion has been cleaned is transported to the fixing unit 120 by the substrate transport device 122 and set on the substrate holder 60 (step S604). At this time, since the organic substance and the oxide film at the edge portion of the substrate W are removed, the electrical contacts of the substrate holder 60 come into contact with the edge portion of the cleaned substrate W. Thereby, the variation in the contact resistance of the electrical contact of the substrate holder 60 caused by the organic matter and the oxide film can be reduced. The substrate W set in the substrate holder 60 is processed in the subsequent steps S605 to S609.
　以上で説明したように、第３実施形態によれば、基板ホルダ６０にセットされる前に、基板のエッジ部に存在する有機物及び酸化膜を局所的に除去することができる。したがって、基板Ｗの表面に形成されたレジストパターンに悪影響を与えることなく、基板Ｗのエッジ部に存在する有機物及び酸化膜に起因する基板ホルダ６０の電気接点７２の接触抵抗のバラつきを抑制し、めっき膜厚の均一性の悪化を防止することができる。 As described above, according to the third embodiment, before being set on the substrate holder 60, organic substances and oxide films present on the edge portion of the substrate can be locally removed. Therefore, without adversely affecting the resist pattern formed on the surface of the substrate W, it is possible to suppress variations in the contact resistance of the electrical contacts 72 of the substrate holder 60 due to organic substances and oxide films present on the edge portion of the substrate W, The deterioration of the uniformity of the plating film thickness can be prevented.
　基板Ｗのエッジ部においては、酸化膜上に有機物が付着し得る。したがって、有機物を脱離する前に酸化膜を除去した場合、有機物が付着した部分の酸化膜が除去され難い。第３実施形態によれば、有機物を脱離した後に酸化膜を除去するので、効果的に有機物及び酸化膜を除去することができる。ただし、一実施形態では、エッジ部の薬液洗浄（ステップＳ７０１）の後に有機物脱離処理（ステップＳ６０３）を行ってもよい。 In the edge portion of the substrate W, organic substances can adhere on the oxide film. Therefore, when the oxide film is removed before the organic substance is desorbed, it is difficult to remove the oxide film on the part to which the organic substance is attached. According to the third embodiment, since the oxide film is removed after desorbing the organic substance, the organic substance and the oxide film can be effectively removed. However, in one embodiment, the organic substance detachment process (step S603) may be performed after the chemical cleaning of the edge part (step S701).
＜第４実施形態＞
　図１４は、第４実施形態にかかるめっき装置の全体配置図である。第４実施形態のめっき装置は、第１実施形態に係る図１のめっき装置と比べて、スポンジ洗浄装置８０を有する点と、有機物脱離装置４５を備えない点とが異なる。その他の構成は第１実施形態と同様であるので、第１実施形態と同様の構成については同一の符号を付して説明を省略する。 <Fourth embodiment>
FIG. 14 is an overall layout diagram of the plating apparatus according to the fourth embodiment. The plating apparatus of the fourth embodiment is different from the plating apparatus of FIG. 1 according to the first embodiment in that it has a sponge cleaning device 80 and that it does not include the organic substance detachment device 45. Since other configurations are the same as those of the first embodiment, the same configurations as those of the first embodiment are denoted by the same reference numerals and description thereof is omitted.
　図１４に示すめっき装置のアライナ４０は、第１実施形態において説明した有機物脱離装置４５を備えない。スポンジ洗浄装置８０は、ロード／アンロード部１７０Ａ内に設けられ、基板Ｗのエッジ部に存在するパーティクルを局所的に除去する。 The aligner 40 of the plating apparatus shown in FIG. 14 does not include the organic substance detachment apparatus 45 described in the first embodiment. The sponge cleaning device 80 is provided in the load / unload unit 170A and locally removes particles present at the edge of the substrate W.
　図１５は、スポンジ洗浄装置８０の概略側面図である。図示のように、スポンジ洗浄装置８０は、回転ステージ８１と、ＤＩＷノズル８３と、スポンジ洗浄部８４（エッジ部洗浄装置の一例に相当する）と、カバー８８を有する。回転ステージ８１は、基板Ｗの裏面を吸着するように構成され、基板Ｗを周方向に回転させる。なお、回転ステージ８１は、静電吸着式又は真空吸着式で基板Ｗを吸着する。ＤＩＷノズル８３は、基板Ｗの略中央部にＤＩＷを供給するように構成される。基板Ｗに供給されたＤＩＷは、基板Ｗの回転により遠心力を受けて、基板Ｗの外周部に向かって流れる。カバー８８は、基板Ｗの周囲を覆い、基板ＷのＤＩＷが外部に飛散することを防止する。 FIG. 15 is a schematic side view of the sponge cleaning device 80. As illustrated, the sponge cleaning device 80 includes a rotary stage 81, a DIW nozzle 83, a sponge cleaning unit 84 (corresponding to an example of an edge cleaning device), and a cover 88. The rotation stage 81 is configured to suck the back surface of the substrate W, and rotates the substrate W in the circumferential direction. The rotary stage 81 sucks the substrate W by an electrostatic suction type or a vacuum suction type. The DIW nozzle 83 is configured to supply DIW to a substantially central portion of the substrate W. The DIW supplied to the substrate W receives centrifugal force due to the rotation of the substrate W and flows toward the outer periphery of the substrate W. The cover 88 covers the periphery of the substrate W and prevents the DIW of the substrate W from scattering outside.
　スポンジ洗浄部８４は、基板Ｗのエッジ部を物理的に洗浄するスポンジヘッド８５と、スポンジヘッド８５に接続されたアーム８６と、アーム８６を旋回するように構成された回転軸８７とを有する。スポンジヘッド８５は、例えばＰＶＡ（ポリビニルアルコール）から成り、鉛直軸を中心に回転可能に構成される。また、回転軸８７は、軸方向に伸縮自在に構成される。 The sponge cleaning unit 84 includes a sponge head 85 that physically cleans the edge portion of the substrate W, an arm 86 connected to the sponge head 85, and a rotating shaft 87 configured to turn the arm 86. The sponge head 85 is made of, for example, PVA (polyvinyl alcohol) and configured to be rotatable about a vertical axis. The rotating shaft 87 is configured to be extendable and contractable in the axial direction.
　スポンジ洗浄部８４で基板Ｗのエッジ部に存在するパーティクルを局所的に除去するためには、まず、スポンジ洗浄装置８０が基板Ｗの直径に応じてアーム８６を旋回し、スポンジヘッド８５を基板Ｗのエッジ部の上方に位置させる。スポンジヘッド８５が基板Ｗのエッジ部の上方に位置した状態で、回転軸８７が軸方向下方に収縮し、スポンジヘッド８５を基板Ｗのエッジ部に当接させる。スポンジ洗浄部８４は、スポンジヘッド８５が回転する基板Ｗのエッジ部に当接した状態で、スポンジヘッド８５を回転させる。このとき、ＤＩＷノズル８３により、基板ＷにＤＩＷが供給される。これにより、スポンジ洗浄装置８０は、基板Ｗのエッジ部のパーティクルを局所的に除去することができる。また、スポンジ洗浄装置８０にセンサ（不図示）を設け、エッジ部に汚染物質が存在しているかいないかを判定するようにしてもよい。 In order for the sponge cleaning unit 84 to locally remove particles present at the edge of the substrate W, first, the sponge cleaning device 80 rotates the arm 86 according to the diameter of the substrate W, and the sponge head 85 is moved to the substrate W. It is located above the edge part of. With the sponge head 85 positioned above the edge portion of the substrate W, the rotary shaft 87 contracts downward in the axial direction, causing the sponge head 85 to contact the edge portion of the substrate W. The sponge cleaning unit 84 rotates the sponge head 85 in a state where the sponge head 85 is in contact with the edge portion of the rotating substrate W. At this time, DIW is supplied to the substrate W by the DIW nozzle 83. Thereby, the sponge cleaning apparatus 80 can locally remove particles on the edge portion of the substrate W. Further, a sensor (not shown) may be provided in the sponge cleaning device 80 so as to determine whether or not a contaminant is present at the edge portion.
　図１６は、第４実施形態に係るめっき方法を示すフロー図である。第４実施形態に係るめっき方法は、第１実施形態に係る図７に示しためっき方法におけるステップＳ６０３に代えて、ステップＳ８０１を有する。図７のめっき方法と同一の部分の説明は一部省略する。 FIG. 16 is a flowchart showing a plating method according to the fourth embodiment. The plating method according to the fourth embodiment includes step S801 instead of step S603 in the plating method illustrated in FIG. 7 according to the first embodiment. Description of the same part as the plating method of FIG. 7 is partially omitted.
　図１６に示すフローにおいて、ステップＳ６０２でアッシング処理及びディスカム処理が行われた基板Ｗは、図１４に示しためっき装置に搬送される。続いて、基板Ｗを収容したフープ１０２から、基板搬送装置１２２によって、基板Ｗがスポンジ洗浄装置８０へ搬送される。スポンジ洗浄装置８０において、基板Ｗはエッジ部の洗浄が行われる（ステップＳ８０１）。具体的には、スポンジ洗浄装置８０において、基板Ｗのエッジ部に存在するパーティクルがスポンジ洗浄部８４により除去される。 In the flow shown in FIG. 16, the substrate W that has been subjected to the ashing process and the discaming process in step S602 is transferred to the plating apparatus shown in FIG. Subsequently, the substrate W is transferred from the FOUP 102 containing the substrate W to the sponge cleaning device 80 by the substrate transfer device 122. In the sponge cleaning apparatus 80, the edge of the substrate W is cleaned (step S801). Specifically, in the sponge cleaning device 80, particles present on the edge portion of the substrate W are removed by the sponge cleaning unit 84.
　本実施形態においても、スポンジ洗浄装置８０に、基板のエッジ部の状態を測定するために、基板Ｗのエッジ部に、エッジ部の上方から紫外領域（２００ｎｍから３８０ｎｍ）の光、例えば３６５ｎｍを励起光として照射し、エッジ部の吸光度を測定するように構成されたセンサ（分光光度計）、又は蛍光領域の光を照射してその反射光の強度をモニタするためのセンサ（蛍光反射膜厚計）を設けてもよい（不図示）。めっき装置の制御部は、このセンサにより測定された吸光度又は蛍光強度の値が、予め設定した閾値よりも大きい値か否かによって、エッジ部の汚染物質（有機物及び酸化膜を含む）が十分に除去されているか否かを判定することができるように構成されている。スポンジ洗浄装置８０にセンサを設けた場合、エッジ部の洗浄中又は洗浄後の基板Ｗのエッジ部の上方にセンサを位置させる。そして、基板Ｗを回転させ、基板Ｗのエッジ部におけるパーティクルの有無を判定し、エッジ部に汚染物質が存在しているかいないかを判定するようにしてもよい。このようにすることで、基板Ｗのエッジ部に汚染物質が存在しているかいないかをめっき処理を行う前に判定し、その後、エッジ部に汚染物質が残存していない基板についてめっき処理を行うようにすることができるので、基板ホルダ６０が有する電気接点の接触抵抗のばらつきに起因する基板Ｗのめっき膜厚の面内均一性の悪化等を防止できる。さらに、基板Ｗのエッジ部の洗浄中に基板Ｗのエッジ部に汚染物質が存在しているかいないかを判定するようにした場合には、洗浄の終点を、このセンサの判定結果に基づいて決定することもできる。さらに、もともとエッジ部に異常がある基板Ｗの有無も、センサの測定結果に基づいて判定できる。 Also in this embodiment, in order to measure the state of the edge portion of the substrate, the sponge cleaning apparatus 80 excites light in the ultraviolet region (200 nm to 380 nm), for example, 365 nm from above the edge portion on the edge portion of the substrate W. A sensor (spectrophotometer) configured to irradiate as light and measure the absorbance of the edge portion, or a sensor (fluorescent reflection film thickness meter) for irradiating light in the fluorescent region and monitoring the intensity of the reflected light ) May be provided (not shown). Depending on whether the absorbance or fluorescence intensity value measured by this sensor is greater than a preset threshold value, the plating unit control unit will sufficiently contain contaminants (including organic matter and oxide films) at the edge. It is configured to be able to determine whether or not it has been removed. When the sponge cleaning device 80 is provided with a sensor, the sensor is positioned above the edge portion of the substrate W during or after the cleaning of the edge portion. Then, the substrate W may be rotated to determine the presence or absence of particles at the edge portion of the substrate W, and to determine whether or not a contaminant is present at the edge portion. By doing in this way, it is determined before performing the plating process whether or not the contaminant is present in the edge portion of the substrate W, and thereafter, the plating process is performed on the substrate in which the contaminant does not remain in the edge portion. Therefore, it is possible to prevent deterioration of the in-plane uniformity of the plating film thickness of the substrate W caused by variations in the contact resistance of the electrical contacts of the substrate holder 60. Further, when it is determined whether or not contaminants are present on the edge portion of the substrate W during the cleaning of the edge portion of the substrate W, the end point of the cleaning is determined based on the determination result of this sensor. You can also Furthermore, the presence / absence of the substrate W having an abnormality in the edge portion can be determined based on the measurement result of the sensor.
　エッジ部の洗浄が行われた基板Ｗは、基板搬送装置１２２によってフィキシングユニット１２０に搬送され、基板ホルダ６０にセットされる（ステップＳ６０４）。このとき、基板Ｗのエッジ部のパーティクルは除去されているので、基板ホルダ６０の電気接点は、洗浄された基板Ｗのエッジ部と接触する。これにより、パーティクルに起因する基板ホルダ６０の電気接点の接触抵抗のバラつきを低減することができる。基板ホルダ６０にセットされた基板Ｗは、後段のステップＳ６０５～ステップＳ６０９において、処理される。 The substrate W on which the edge portion has been cleaned is transported to the fixing unit 120 by the substrate transport device 122 and set on the substrate holder 60 (step S604). At this time, since the particles at the edge portion of the substrate W are removed, the electrical contact of the substrate holder 60 comes into contact with the edge portion of the cleaned substrate W. Thereby, the dispersion | variation in the contact resistance of the electrical contact of the board | substrate holder 60 resulting from a particle can be reduced. The substrate W set in the substrate holder 60 is processed in the subsequent steps S605 to S609.
　以上で説明したように、第４実施形態によれば、基板ホルダ６０にセットされる前に、基板Ｗのエッジ部に存在するパーティクルを局所的に除去することができる。したがって、基板ホルダ６０の電気接点と基板Ｗのエッジ部上のシード層との間にパーティクルが挟み込まれることを防止することができ、パーティクルに起因する接触抵抗の悪化を抑制することができる。 As described above, according to the fourth embodiment, the particles present on the edge portion of the substrate W can be locally removed before being set on the substrate holder 60. Therefore, it is possible to prevent particles from being sandwiched between the electrical contacts of the substrate holder 60 and the seed layer on the edge portion of the substrate W, and it is possible to suppress deterioration of contact resistance caused by the particles.
＜第５実施形態＞
　図１７は、第５実施形態にかかるめっき装置の全体配置図である。第５実施形態のめっき装置は、第１実施形態に係る図１のめっき装置と比べて、スポンジ薬液洗浄装置９０を有する点が異なる。その他の構成は第１実施形態と同様であるので、第１実施形態と同様の構成については同一の符号を付して説明を省略する。 <Fifth Embodiment>
FIG. 17 is an overall layout diagram of the plating apparatus according to the fifth embodiment. The plating apparatus of 5th Embodiment differs in having the sponge chemical | medical solution washing | cleaning apparatus 90 compared with the plating apparatus of FIG. 1 which concerns on 1st Embodiment. Since other configurations are the same as those of the first embodiment, the same configurations as those of the first embodiment are denoted by the same reference numerals and description thereof is omitted.
　図１７に示すスポンジ薬液洗浄装置９０は、ロード／アンロード部１７０Ａ内に設けられ、基板Ｗのエッジ部に存在する酸化膜及びパーティクルを局所的に除去する。また、図１７には示していないが、スポンジ薬液洗浄装置９０においても、基板Ｗのエッジ部上方に位置する付近にセンサ（不図示）を設け、エッジ部に汚染物質が存在しているかいないかを判定するようにしてもよい。この場合、基板Ｗのエッジ部に、エッジ部の上方から紫外領域（２００ｎｍから３８０ｎｍ）の光、例えば３６５ｎｍを励起光として照射し、エッジ部の吸光度を測定するように構成されたセンサ（分光光度計）、又は蛍光領域の光を照射してその反射光の強度をモニタするためのセンサ（蛍光反射膜厚計）を設けてもよい（不図示）。めっき装置の制御部は、このセンサにより測定された吸光度または蛍光強度の値が、予め設定した閾値よりも大きい値か否かによって、エッジ部の汚染物質（有機物及び酸化膜を含む）が十分に除去されているか否かを判定することができるように構成されている 17 is provided in the load / unload unit 170A and locally removes the oxide film and particles present on the edge portion of the substrate W. The sponge chemical cleaning device 90 shown in FIG. Although not shown in FIG. 17, in the sponge chemical cleaning apparatus 90, a sensor (not shown) is provided in the vicinity of the upper portion of the edge of the substrate W to check whether contaminants are present at the edge. May be determined. In this case, a sensor (spectrophotometer) configured to irradiate the edge portion of the substrate W from the upper portion of the edge portion with ultraviolet light (200 nm to 380 nm), for example, 365 nm as excitation light, and measure the absorbance of the edge portion. Or a sensor (fluorescent reflection film thickness meter) for irradiating light in the fluorescent region and monitoring the intensity of the reflected light (not shown). Depending on whether the absorbance or fluorescence intensity value measured by this sensor is greater than a preset threshold value, the plating unit control unit will sufficiently contain contaminants (including organic substances and oxide films) at the edge. Configured to determine if it has been removed
　図１８は、スポンジ薬液洗浄装置９０の概略側面図である。図示のように、スポンジ薬液洗浄装置９０は、回転ステージ９１と、ＤＩＷノズル９３と、スポンジ洗浄部８４と、酸化膜除去装置９４（エッジ部洗浄装置の一例に相当する）と、カバー９８を有する。回転ステージ９１は、基板Ｗの裏面を吸着するように構成され、基板Ｗを周方向に回転させる。なお、回転ステージ９１は、静電吸着式又は真空吸着式で基板Ｗを吸着する。 FIG. 18 is a schematic side view of the sponge chemical cleaning apparatus 90. As illustrated, the sponge chemical cleaning apparatus 90 includes a rotary stage 91, a DIW nozzle 93, a sponge cleaning section 84, an oxide film removing apparatus 94 (corresponding to an example of an edge section cleaning apparatus), and a cover 98. . The rotation stage 91 is configured to suck the back surface of the substrate W, and rotates the substrate W in the circumferential direction. The rotary stage 91 sucks the substrate W by an electrostatic suction type or a vacuum suction type.
　酸化膜除去装置９４は、基板に薬液を供給する薬液供給装置であり、薬液を供給するように構成された薬液ノズル９５と、薬液ノズル９５に接続されたアーム９６と、アーム９６を旋回するように構成された回転軸９７とを有する。薬液ノズル９５の先端と基板Ｗとの距離は、約１ｍｍ以上約１０ｍｍ以下とすることが好ましい。この距離が１ｍｍ未満であると、基板と薬液ノズル９５とが物理的に接触する可能性がある。また、この距離を１０ｍｍ超とすると、局所的に薬液を供給できない可能性がある。基板と薬液ノズル９５とをより確実に物理的に接触させることなく、また、局所的に薬液を供給できるようにするためには、薬液ノズル９５の先端と基板との距離を約２ｍｍ以上約５ｍｍ以下とすることがより好ましい。 The oxide film removing device 94 is a chemical solution supply device that supplies a chemical solution to the substrate. The chemical solution nozzle 95 is configured to supply the chemical solution, the arm 96 is connected to the chemical solution nozzle 95, and the arm 96 is turned. And a rotating shaft 97 configured as described above. The distance between the tip of the chemical nozzle 95 and the substrate W is preferably about 1 mm or more and about 10 mm or less. If this distance is less than 1 mm, the substrate and the chemical nozzle 95 may be in physical contact. If this distance exceeds 10 mm, there is a possibility that the chemical solution cannot be supplied locally. In order to make it possible to supply the chemical solution locally without more reliably bringing the substrate and the chemical solution nozzle 95 into physical contact with each other, the distance between the tip of the chemical solution nozzle 95 and the substrate is about 2 mm or more and about 5 mm. More preferably, it is as follows.
　スポンジ薬液洗浄装置９０で基板Ｗのエッジ部に存在する酸化膜を局所的に除去するためには、まず、酸化膜除去装置９４は、基板Ｗの直径に応じてアーム９６を旋回し、薬液ノズル９５を基板Ｗのエッジ部の上方に位置させる。薬液ノズル９５が基板Ｗのエッジ部の上方に位置した状態で、回転する基板Ｗの略中央部にＤＩＷノズル９３からＤＩＷを供給するとともに、回転する基板Ｗのエッジ部に薬液を噴出する。薬液は基板Ｗのエッジ部に供給されるとともに、基板Ｗの回転により遠心力を受けて基板Ｗの外周部に向かって流れる。これにより、酸化膜除去装置９４は、基板Ｗのエッジ部に局所的に薬液を供給することができる。言い換えれば、実質的に基板Ｗのエッジ部以外の領域は、薬液に曝されない。回転ステージ９１が基板Ｗを回転することにより、基板Ｗのエッジ部全周に亘って薬液を効率的に供給することができる。基板Ｗのエッジ部に形成された酸化膜に薬液が供給されると、酸化膜は薬液により溶解し、除去される。所定時間薬液を供給した後、薬液の供給は停止され、ＤＩＷの供給が継続される。これにより、基板Ｗのエッジ部に供給された薬液が洗い流される。ここで、基板Ｗのエッジ部とは、前述したように電気接点７２が接触しうる領域、又は基板ホルダ６０により基板Ｗが保持される際、基板Ｗがシール部材７０が接触する部分よりも基板Ｗの周縁部側となる領域である。ただし、薬液を基板に対してスポット的に供給する際に、一部の薬液が飛散しうることをあらかじめ想定して、レジストパターンに悪影響を与えにくい薬液成分・濃度としたうえで、基板Ｗのエッジ部の周辺部にある酸化膜を薬液２８により溶解し、除去するように構成することもできる。 In order to locally remove the oxide film present on the edge portion of the substrate W by the sponge chemical solution cleaning apparatus 90, the oxide film removal apparatus 94 first turns the arm 96 in accordance with the diameter of the substrate W, and the chemical liquid nozzle. 95 is positioned above the edge of the substrate W. With the chemical nozzle 95 positioned above the edge portion of the substrate W, DIW is supplied from the DIW nozzle 93 to the substantially central portion of the rotating substrate W, and the chemical solution is ejected to the edge portion of the rotating substrate W. The chemical solution is supplied to the edge portion of the substrate W and flows toward the outer peripheral portion of the substrate W by receiving a centrifugal force by the rotation of the substrate W. As a result, the oxide film removing apparatus 94 can locally supply the chemical solution to the edge portion of the substrate W. In other words, the region other than the edge portion of the substrate W is not exposed to the chemical solution. When the rotary stage 91 rotates the substrate W, the chemical solution can be efficiently supplied over the entire periphery of the edge portion of the substrate W. When the chemical solution is supplied to the oxide film formed on the edge portion of the substrate W, the oxide film is dissolved and removed by the chemical solution. After supplying the chemical solution for a predetermined time, the supply of the chemical solution is stopped and the supply of DIW is continued. Thereby, the chemical solution supplied to the edge portion of the substrate W is washed away. Here, the edge portion of the substrate W is a region where the electrical contact 72 can contact as described above, or a portion where the substrate W contacts the seal member 70 when the substrate W is held by the substrate holder 60. This is a region on the peripheral edge side of W. However, when supplying the chemical solution spot-wise to the substrate, it is assumed in advance that a part of the chemical solution may scatter, and the chemical component / concentration that does not adversely affect the resist pattern is used. The oxide film in the peripheral portion of the edge portion may be dissolved and removed by the chemical solution 28.
　また、スポンジ薬液洗浄装置９０は、酸化膜除去装置９４により基板Ｗのエッジ部の酸化膜を除去しつつ、スポンジ洗浄部８４によって基板Ｗのエッジ部に存在するパーティクルを局所的に除去することができる。なお、本実施形態においても、基板のエッジ部に汚染物質が存在しているかいないかを測定するために、基板Ｗのエッジ部に、エッジ部の上方から紫外領域（２００ｎｍから３８０ｎｍ）の光、例えば３６５ｎｍを励起光として照射し、エッジ部の吸光度を測定するように構成されたセンサ（分光光度計）、又は蛍光領域の光を照射してその反射光の強度をモニタするためのセンサ（蛍光反射膜厚計）をスポンジ薬液洗浄装置９０に設けてもよい（不図示）。めっき装置の制御部は、このセンサにより測定された吸光度又は蛍光強度の値が、予め設定した閾値よりも大きい値か否かによって、エッジ部の汚染物質（有機物及び酸化膜を含む）が十分に除去されているか否かを判定することができるように構成されている。その場合、エッジ部の洗浄中又は洗浄後の基板Ｗのエッジ部の上方にセンサを位置させた状態で基板Ｗを回転させ、エッジ部に汚染物質が存在しているかいないかを判定できる。このようにすることで、基板Ｗのエッジ部に汚染物質が存在しているかいないかをめっき処理を行う前に判定し、その後、エッジ部に汚染物質が残存していない基板についてめっき処理を行うようにすることができるので、基板ホルダ６０が有する電気接点の接触抵抗のばらつきに起因する基板Ｗのめっき膜厚の面内均一性の悪化等を防止できる。さらに、基板Ｗのエッジ部の洗浄中に基板Ｗのエッジ部に汚染物質が存在しているかいないかを判定するようにした場合には、洗浄の終点を、このセンサの判定結果に基づいて決定することもできる。さらに、もともとエッジ部に異常がある基板Ｗの有無も、センサの測定結果に基づいて判定できる。 Further, the sponge chemical cleaning apparatus 90 can locally remove particles present on the edge portion of the substrate W by the sponge cleaning portion 84 while removing the oxide film at the edge portion of the substrate W by the oxide film removing device 94. it can. Also in this embodiment, in order to measure whether or not contaminants are present in the edge portion of the substrate, light in the ultraviolet region (200 nm to 380 nm) from above the edge portion is applied to the edge portion of the substrate W. For example, a sensor (spectrophotometer) configured to irradiate 365 nm as excitation light and measure the absorbance at the edge portion, or a sensor for irradiating light in the fluorescent region and monitoring the intensity of the reflected light (fluorescence) A reflective film thickness meter may be provided in the sponge chemical cleaning device 90 (not shown). Depending on whether the absorbance or fluorescence intensity value measured by this sensor is greater than a preset threshold value, the plating unit control unit will sufficiently contain contaminants (including organic matter and oxide films) at the edge. It is configured to be able to determine whether or not it has been removed. In that case, the substrate W can be rotated with the sensor positioned above the edge portion of the substrate W during or after cleaning the edge portion, and it can be determined whether or not contaminants are present in the edge portion. By doing in this way, it is determined before performing the plating process whether or not the contaminant is present in the edge portion of the substrate W, and thereafter, the plating process is performed on the substrate in which the contaminant does not remain in the edge portion. Therefore, it is possible to prevent deterioration of the in-plane uniformity of the plating film thickness of the substrate W caused by variations in the contact resistance of the electrical contacts of the substrate holder 60. Further, when it is determined whether or not contaminants are present on the edge portion of the substrate W during the cleaning of the edge portion of the substrate W, the end point of the cleaning is determined based on the determination result of this sensor. You can also Furthermore, the presence / absence of the substrate W having an abnormality in the edge portion can be determined based on the measurement result of the sensor.
　図１９は、第５実施形態に係るめっき方法を示すフロー図である。第５実施形態に係るめっき方法は、第１実施形態に係る図７に示しためっき方法に加えて、ステップＳ９０１を有する。図７のめっき方法と同一の部分の説明は一部省略する。 FIG. 19 is a flowchart showing a plating method according to the fifth embodiment. The plating method according to the fifth embodiment includes step S901 in addition to the plating method shown in FIG. 7 according to the first embodiment. Description of the same part as the plating method of FIG. 7 is partially omitted.
　ステップＳ６０３において、アライナ４０が有する有機物脱離装置４５（図４ないし図６参照）が、基板Ｗのエッジ部に存在する有機物を脱離する。続いて、基板搬送装置１２２によって、基板Ｗがスポンジ薬液洗浄装置９０へ搬送される。スポンジ薬液洗浄装置９０において、基板Ｗはエッジ部の洗浄が行われる（ステップＳ９０１）。具体的には、スポンジ薬液洗浄装置９０において、基板Ｗのエッジ部に存在するパーティクル及び酸化膜が除去される。また、図１９には示されていないが、エッジ部の洗浄が行われた基板Ｗのエッジ部における有機物、酸化膜、パーティクル等の有無を判定するために、エッジ部に汚染物質が存在しているかいないかを判定するようにしてもよい。 In step S603, the organic substance desorbing device 45 (see FIGS. 4 to 6) included in the aligner 40 desorbs organic substances present at the edge portion of the substrate W. Subsequently, the substrate W is transferred to the sponge chemical cleaning device 90 by the substrate transfer device 122. In the sponge chemical cleaning apparatus 90, the edge of the substrate W is cleaned (step S901). Specifically, in the sponge chemical cleaning apparatus 90, particles and oxide films present on the edge portion of the substrate W are removed. Although not shown in FIG. 19, in order to determine the presence or absence of organic substances, oxide films, particles, etc. at the edge portion of the substrate W where the edge portion has been cleaned, contaminants are present at the edge portion. You may make it determine whether it exists.
　エッジ部の洗浄が行われた基板Ｗは、基板搬送装置１２２によってフィキシングユニット１２０に搬送され、基板ホルダ６０にセットされる（ステップＳ６０４）。このとき、基板ホルダ６０の電気接点は、洗浄された基板Ｗのエッジ部と接触する。これにより、パーティクルに起因する基板ホルダ６０の電気接点の接触抵抗のバラつきを低減することができる。基板ホルダ６０にセットされた基板Ｗは、後段のステップＳ６０５～ステップＳ６０９において、処理される。 The substrate W on which the edge portion has been cleaned is transported to the fixing unit 120 by the substrate transport device 122 and set on the substrate holder 60 (step S604). At this time, the electrical contact of the substrate holder 60 contacts the edge portion of the cleaned substrate W. Thereby, the dispersion | variation in the contact resistance of the electrical contact of the board | substrate holder 60 resulting from a particle can be reduced. The substrate W set in the substrate holder 60 is processed in the subsequent steps S605 to S609.
　以上で説明したように、第５実施形態によれば、基板ホルダ６０にセットされる前に、基板Ｗのエッジ部に存在する有機物、酸化膜、及びパーティクルを局所的に除去することができる。したがって、基板Ｗのエッジ部に存在する有機物、酸化膜、及びパーティクルに起因する基板ホルダ６０の電気接点７２の接触抵抗のバラつきを抑制し、めっき膜厚の均一性の悪化を防止することができる。 As described above, according to the fifth embodiment, before the substrate holder 60 is set, organic substances, oxide films, and particles present on the edge portion of the substrate W can be locally removed. Therefore, variations in the contact resistance of the electrical contacts 72 of the substrate holder 60 caused by organic substances, oxide films, and particles present on the edge portion of the substrate W can be suppressed, and deterioration of the uniformity of the plating film thickness can be prevented. .
＜第６実施形態＞
　図２０は、第６実施形態にかかるめっき装置の全体配置図である。第６実施形態のめっき装置は、第１実施形態から第５実施形態のめっき装置と比べて、矩形（角形）基板にめっきを行うように構成されている点が大きく異なる。以下の説明において、第１実施形態のめっき装置と同様の構成については詳細な説明を省略する。 <Sixth Embodiment>
FIG. 20 is an overall layout diagram of the plating apparatus according to the sixth embodiment. The plating apparatus according to the sixth embodiment is significantly different from the plating apparatuses according to the first to fifth embodiments in that the plating apparatus is configured to perform plating on a rectangular (rectangular) substrate. In the following description, detailed description of the same configuration as the plating apparatus of the first embodiment is omitted.
　第６実施形態のめっき装置は、フープ１０２と、フィキシングユニット１２０と、基板搬送装置１２２とを有する。後述するように、第６実施形態に係るフィキシングユニット１２０は、基板ホルダ６０にセットされる前の矩形基板のエッジ部に存在する有機物を局所的に脱離する有機物脱離装置を有する。第６実施形態のめっき装置では、矩形基板を保持することができる基板ホルダ６０が使用される。フィキシングユニット１２０は、有機物脱離装置で、矩形基板のエッジ部に存在する有機物を局所的に脱離した後、基板ホルダ６０に矩形基板を保持させるように構成される。 The plating apparatus of the sixth embodiment includes a hoop 102, a fixing unit 120, and a substrate transfer device 122. As will be described later, the fixing unit 120 according to the sixth embodiment includes an organic substance detaching device that locally detaches organic substances present at the edge of the rectangular substrate before being set on the substrate holder 60. In the plating apparatus of the sixth embodiment, a substrate holder 60 that can hold a rectangular substrate is used. The fixing unit 120 is configured to hold the rectangular substrate on the substrate holder 60 after locally detaching the organic substance existing at the edge portion of the rectangular substrate with the organic material detaching apparatus.
　めっき装置は、さらに、ストッカ１２４と、プリウェット槽１２６と、活性化槽１２９と、ブロー槽１３２と、めっき槽１０と、を有する。活性化槽１２９では、プリウェット後の基板の表面を酸等で洗浄して活性化させる。ストッカ１２４、プリウェット槽１２６、活性化槽１２９、ブロー槽１３２、及びめっき槽１０は、この順に配置されている。また、めっき装置は、めっき処理された矩形基板を洗浄及び乾燥するための洗浄乾燥装置１３５を有する。 The plating apparatus further includes a stocker 124, a pre-wet tank 126, an activation tank 129, a blow tank 132, and a plating tank 10. In the activation tank 129, the surface of the substrate after pre-wetting is activated by washing with an acid or the like. The stocker 124, the pre-wet tank 126, the activation tank 129, the blow tank 132, and the plating tank 10 are arranged in this order. Further, the plating apparatus has a cleaning / drying apparatus 135 for cleaning and drying the plated rectangular substrate.
　図２１は、第６実施形態に係るめっき方法を示すフロー図である。本めっき方法では、まず、図２０に示しためっき装置に矩形基板を搬送する前に、矩形基板にレジストパターンを形成する（ステップＳ２１０１）。続いて、レジストパターンが形成された矩形基板にＵＶの照射を行い、矩形基板表面上のレジスト残渣を除去し（アッシング処理）且つレジスト表面の親水化処理（ディスカム処理）を行う（ステップＳ２１０２）。ステップＳ２１０１及びステップＳ２１０２の処理は、図２０に示しためっき装置以外の任意の装置において行われる。 FIG. 21 is a flowchart showing the plating method according to the sixth embodiment. In this plating method, first, a resist pattern is formed on a rectangular substrate before the rectangular substrate is conveyed to the plating apparatus shown in FIG. 20 (step S2101). Subsequently, the rectangular substrate on which the resist pattern is formed is irradiated with UV, the resist residue on the surface of the rectangular substrate is removed (ashing treatment), and the resist surface is hydrophilized (discum treatment) (step S2102). The processes in steps S2101 and S2102 are performed in an arbitrary apparatus other than the plating apparatus shown in FIG.
　続いて、矩形基板を収容したフープ１０２から、基板搬送装置１２２によって、矩形基板がフィキシングユニット１２０へ搬送される。フィキシングユニット１２０において、矩形基板のエッジ部の洗浄が行われる（ステップＳ２１０３）。具体的には、フィキシングユニット１２０において、有機物脱離装置により矩形基板のエッジ部に局所的にＵＶ又はプラズマが適用され、有機物が脱離される。 Subsequently, the rectangular substrate is transferred from the FOUP 102 containing the rectangular substrate to the fixing unit 120 by the substrate transfer device 122. In the fixing unit 120, the edge portion of the rectangular substrate is cleaned (step S2103). Specifically, in the fixing unit 120, UV or plasma is locally applied to the edge portion of the rectangular substrate by the organic substance detaching apparatus, and the organic substance is desorbed.
　図２１に示すフローには記載されていないが、フィキシングユニット１２０にセンサ（不図示）を設けた場合には、矩形基板のエッジ部に存在する有機物にＵＶ又はプラズマを適用して局所的に除去した後に、エッジ部の汚染物質（有機物を含む）の有無を確認することができる。具体的には、まず、フィキシングユニット１２０に供えられた有機物脱離装置に配置された矩形基板の表面の上方にセンサ（分光光度計又は蛍光反射膜厚計）を位置させる。センサを矩形基板中心部からエッジ部へ（又はエッジ部から基板中心部へ）走査させながら、センサから矩形基板の表面に向かって紫外領域（２００ｎｍから３８０ｎｍ）の光、例えば３６５ｎｍの波長の光を励起光として照射し、吸光度または蛍光強度を測定する。 Although not described in the flow shown in FIG. 21, when a sensor (not shown) is provided in the fixing unit 120, it is locally removed by applying UV or plasma to organic substances present at the edge of the rectangular substrate. After that, the presence or absence of contaminants (including organic substances) in the edge portion can be confirmed. Specifically, first, a sensor (spectrophotometer or fluorescent reflection film thickness meter) is positioned above the surface of a rectangular substrate disposed in the organic substance detachment apparatus provided in the fixing unit 120. While scanning the sensor from the central part of the rectangular substrate to the edge part (or from the edge part to the central part of the substrate), light in the ultraviolet region (200 nm to 380 nm) from the sensor toward the surface of the rectangular substrate, for example, light having a wavelength of 365 nm Irradiate as excitation light and measure absorbance or fluorescence intensity.
　矩形基板表面には、ＵＶ又はプラズマ処理が行われたエッジ部と、ＵＶ又はプラズマ処理が行われていない被めっき面とが存在し、シード層は、矩形基板表面の全域（被めっき面とエッジ部）に形成されている。そして、被めっき面とエッジ部にセンサを走査させることで、被めっき面とエッジ部の両方の吸光度又は蛍光強度を測定することができる。めっき装置の図示しない制御部は、例えば、この被めっき面とエッジ部の両方の吸光度を比較し、例えば被めっき面の吸光度に対するエッジ部の吸光度の比の値が予め設定した閾値（例えば５０％以下）より大きいか否かにより、エッジ部の汚染物質（有機物および酸化膜を含む）が十分に除去されているか否かを判定することができる。上記比の値が閾値より大きい場合は、エッジ部の汚染物質（有機物および酸化膜を含む）は十分に除去されていないと判定できる。また、上記比の値が閾値より大きくない場合はエッジ部の汚染物質（有機物および酸化膜を含む）は十分に除去されていると判定できる。蛍光強度を測定する場合も、同様に所定の閾値と測定値とを比較することで、エッジ部の汚染物質が十分に除去されているか否かを判定することができる。 The rectangular substrate surface has an edge portion that has been subjected to UV or plasma treatment and a plated surface that has not been subjected to UV or plasma treatment, and the seed layer is the entire surface of the rectangular substrate surface (the plated surface and the edge). Part). And by making a sensor scan a to-be-plated surface and an edge part, the light absorbency or fluorescence intensity of both a to-be-plated surface and an edge part can be measured. A control unit (not shown) of the plating apparatus, for example, compares the absorbance of both the surface to be plated and the edge portion. For example, the ratio of the absorbance of the edge portion to the absorbance of the surface to be plated has a preset threshold value (for example, 50% It is possible to determine whether or not the contaminants (including organic matter and oxide film) at the edge portion have been sufficiently removed. When the value of the ratio is larger than the threshold value, it can be determined that the contaminants (including organic substances and oxide film) at the edge portion are not sufficiently removed. When the value of the ratio is not larger than the threshold value, it can be determined that the contaminants (including organic substances and oxide film) at the edge are sufficiently removed. Similarly, when the fluorescence intensity is measured, it is possible to determine whether or not the contaminants at the edge portion are sufficiently removed by comparing the predetermined threshold value with the measured value.
　この判定に基づき、エッジ部の汚染物質が十分に除去されていないと判定された場合は、矩形基板のエッジ部に局所的にＵＶ又はプラズマを放射する工程を繰り返し実施してもよい。また、エッジ部の汚染物質が十分に除去されていると判定された場合は、有機物の脱離が完了したものとして、基板ホルダ搬送装置１４０によって各処理槽に搬送され、一連のめっき処理が実施される。このように、矩形基板のエッジ部に汚染物質が存在しているかいないかをめっき処理前に判定し、その後、エッジ部に汚染物質が残存していない矩形基板についてめっき処理を行うようにすることで、基板ホルダ６０が有する電気接点の接触抵抗のばらつきに起因する矩形基板のめっき膜厚の面内均一性の悪化等を、より確実に防止できる。 Based on this determination, when it is determined that the contaminants at the edge portion are not sufficiently removed, the step of locally radiating UV or plasma to the edge portion of the rectangular substrate may be repeatedly performed. In addition, when it is determined that the contaminants at the edge are sufficiently removed, it is assumed that the removal of the organic matter has been completed, and is transferred to each processing tank by the substrate holder transfer device 140, and a series of plating processes is performed. Is done. In this way, it is determined whether or not contaminants are present on the edge portion of the rectangular substrate before the plating process, and thereafter, the rectangular substrate having no contaminants remaining on the edge portion is subjected to the plating process. Thus, deterioration of the in-plane uniformity of the plating film thickness of the rectangular substrate due to variations in the contact resistance of the electrical contacts of the substrate holder 60 can be more reliably prevented.
　エッジ部の洗浄が行われた矩形基板は、フィキシングユニット１２０により基板ホルダ６０にセットされる（ステップＳ２１０４）。このとき、矩形基板のエッジ部の有機物は脱離されているので、基板ホルダ６０の電気接点は、洗浄された矩形基板のエッジ部と接触する。これにより、有機物の付着に起因する基板ホルダ６０の電気接点の接触抵抗のバラつきを低減することができる。 The rectangular substrate whose edge has been cleaned is set on the substrate holder 60 by the fixing unit 120 (step S2104). At this time, since the organic substance at the edge portion of the rectangular substrate is detached, the electrical contact of the substrate holder 60 comes into contact with the edge portion of the cleaned rectangular substrate. Thereby, the dispersion | variation in the contact resistance of the electrical contact of the board | substrate holder 60 resulting from adhesion of organic substance can be reduced.
　基板ホルダ６０に保持された矩形基板は、基板ホルダ搬送装置１４０により、まずプリウェット槽１２６に搬送され、プリウェット槽１２６に収容された純水に基板Ｗが浸漬される（ステップＳ２１０５）。続いて、矩形基板は、活性化槽１２９に搬送され、基板Ｗの表面が活性化される（ステップＳ２１０６）。 The rectangular substrate held by the substrate holder 60 is first transported to the pre-wet bath 126 by the substrate holder transport device 140, and the substrate W is immersed in pure water stored in the pre-wet bath 126 (step S2105). Subsequently, the rectangular substrate is transferred to the activation tank 129, and the surface of the substrate W is activated (step S2106).
　矩形基板は、めっき槽１０のいずれかのめっきセル１３４に浸漬されて、めっき処理が行われる（ステップＳ２１０７）。表面にめっき膜が形成された矩形基板は、ブロー槽１３２においてブロー乾燥される（ステップＳ２１０８）。続いて、基板ホルダ６０に保持された矩形基板はフィキシングユニット１２０に搬送され、基板ホルダ６０から矩形基板が取り外される。基板搬送装置１２２は、フィキシングユニット１２０から矩形基板を受け取り、洗浄乾燥装置１３５に矩形基板を搬送する。矩形基板は、洗浄乾燥装置１３５において、表面の洗浄及び乾燥が行われる（ステップＳ２１０９）。 The rectangular substrate is immersed in one of the plating cells 134 of the plating tank 10 and subjected to a plating process (step S2107). The rectangular substrate having the plating film formed on the surface is blow-dried in the blow tank 132 (step S2108). Subsequently, the rectangular substrate held by the substrate holder 60 is transported to the fixing unit 120, and the rectangular substrate is removed from the substrate holder 60. The substrate transfer device 122 receives the rectangular substrate from the fixing unit 120 and transfers the rectangular substrate to the cleaning / drying device 135. The surface of the rectangular substrate is cleaned and dried in the cleaning / drying apparatus 135 (step S2109).
　次に、図２１に示したステップＳ２１０３における処理について詳細に説明する。図２２は、フィキシングユニット１２０に設けられる有機物脱離装置５０の一例の概略側面図である。有機物脱離装置５０は、ＵＶ照射装置又はプラズマ放射装置を構成する。図２２に示すように、有機物脱離装置５０は、基板支持台５５（回転機構の一例に相当する）と、第１アクチュエータ５３（アクチュエータの一例に相当する）と、第２アクチュエータ５２（アクチュエータの一例に相当する）と、ヘッド部５１と、制御部５４と、を有する。基板支持台５５は、矩形基板Ｓ１の裏面を吸着するように構成され、矩形基板Ｓ１を周方向に回転させる。なお、基板支持台５５は、静電吸着式又は真空吸着式で矩形基板Ｓ１を吸着する。 Next, the process in step S2103 shown in FIG. 21 will be described in detail. FIG. 22 is a schematic side view of an example of the organic substance detachment apparatus 50 provided in the fixing unit 120. The organic substance detachment apparatus 50 constitutes a UV irradiation apparatus or a plasma emission apparatus. As shown in FIG. 22, the organic substance detaching apparatus 50 includes a substrate support base 55 (corresponding to an example of a rotation mechanism), a first actuator 53 (corresponding to an example of an actuator), and a second actuator 52 (actuator of the actuator). Equivalent to an example), a head unit 51, and a control unit 54. The substrate support 55 is configured to suck the back surface of the rectangular substrate S1, and rotates the rectangular substrate S1 in the circumferential direction. In addition, the board | substrate support stand 55 adsorb | sucks the rectangular substrate S1 by an electrostatic adsorption type or a vacuum adsorption type.
　ヘッド部５１は、基板支持台５５に配置された矩形基板Ｓ１の上方から矩形基板Ｓ１のエッジ部に局所的にＵＶ又はプラズマを適用できるように構成される。即ち、ヘッド部５１がＵＶを照射するように構成される場合は、有機物脱離装置５０はＵＶ照射装置を構成し、ヘッド部５１がプラズマを放射するように構成される場合は、有機物脱離装置５０はプラズマ照射装置を構成する。有機物脱離装置５０は、基板ホルダ６０に保持される前の矩形基板Ｓ１のエッジ部に局所的にＵＶ又はプラズマを適用することができる。言い換えれば、矩形基板Ｓ１のエッジ部以外の領域は、ＵＶ又はプラズマに曝されない。 The head unit 51 is configured such that UV or plasma can be locally applied to the edge of the rectangular substrate S1 from above the rectangular substrate S1 disposed on the substrate support base 55. That is, when the head unit 51 is configured to irradiate UV, the organic matter detachment apparatus 50 constitutes a UV irradiation device, and when the head unit 51 is configured to radiate plasma, organic matter detachment is performed. The apparatus 50 constitutes a plasma irradiation apparatus. The organic substance detachment apparatus 50 can locally apply UV or plasma to the edge portion of the rectangular substrate S1 before being held by the substrate holder 60. In other words, the region other than the edge portion of the rectangular substrate S1 is not exposed to UV or plasma.
　第１アクチュエータ５３及び第２アクチュエータ５２は、ヘッド部５１を水平方向に移動させることができる。具体的には、第１アクチュエータ５３は、ヘッド部５１を水平方向であり且つ直線方向の第１方向に移動させることができ、第２アクチュエータ５２は、第１方向と直交する第２方向に移動させることができる。図示の例では、第１アクチュエータ５３により、矩形基板Ｓ１のエッジ部に沿ってヘッド部５１を移動させることができ、第２アクチュエータ５２により、矩形基板Ｓ１の端部からＵＶ又はプラズマの適用位置までの距離ｄ２を調節することができる。本実施形態においては、基板ホルダ６０のシール部材７０のリップ部７０ａが当接する部分よりも外周側の領域にＵＶ又はプラズマが適用されるように、距離ｄ２は、約５ｍｍ以下、より好ましくは約２ｍｍ以下となるようにヘッド部５１の位置が調整される。なお、本実施形態において第１方向又は第２方向とは、一方向ではなく、例えばＸ軸のプラス方向及びマイナス方向のような双方向を意味する。 The first actuator 53 and the second actuator 52 can move the head portion 51 in the horizontal direction. Specifically, the first actuator 53 can move the head portion 51 in a first direction that is horizontal and linear, and the second actuator 52 moves in a second direction that is orthogonal to the first direction. Can be made. In the illustrated example, the head unit 51 can be moved along the edge of the rectangular substrate S1 by the first actuator 53, and from the end of the rectangular substrate S1 to the UV or plasma application position by the second actuator 52. The distance d2 can be adjusted. In the present embodiment, the distance d2 is about 5 mm or less, more preferably about 5 mm, so that UV or plasma is applied to a region on the outer peripheral side with respect to the portion where the lip portion 70a of the sealing member 70 of the substrate holder 60 contacts. The position of the head part 51 is adjusted to be 2 mm or less. In the present embodiment, the first direction or the second direction means not a single direction but a bidirectional direction such as a positive direction and a negative direction of the X axis.
　また、ヘッド部５１は、図示しない昇降機構により、鉛直方向に移動可能に構成される。ヘッド部５１のＵＶ照射源又はプラズマ放射口と矩形基板Ｓ１との距離ｄ１は、約１ｍｍ以上約１０ｍｍ以下とすることが好ましい。この距離が１ｍｍ未満であると、矩形基板Ｓ１とＵＶ照射源又はプラズマ放射口とが物理的に接触する可能性がある。また、この距離ｄ１を１０ｍｍ超とすると、局所的にＵＶ又はプラズマを照射できない可能性がある。矩形基板とＵＶ照射源又はプラズマ放射口とをより確実に物理的に接触させることなく、また、局所的に照射できるようにするためには、この距離ｄ１を約２ｍｍ以上約５ｍｍ以下とすることがより好ましい。 The head unit 51 is configured to be movable in the vertical direction by an elevator mechanism (not shown). The distance d1 between the UV irradiation source or plasma radiation port of the head unit 51 and the rectangular substrate S1 is preferably about 1 mm or more and about 10 mm or less. If this distance is less than 1 mm, there is a possibility that the rectangular substrate S1 and the UV irradiation source or the plasma emission port are in physical contact. Further, if the distance d1 exceeds 10 mm, there is a possibility that UV or plasma cannot be irradiated locally. This distance d1 should be about 2 mm or more and about 5 mm or less so that the rectangular substrate and the UV irradiation source or the plasma emission port can be irradiated locally without further reliable physical contact. Is more preferable.
　有機物脱離装置５０は、さらに、ヘッド部５１、第１アクチュエータ５３、及び第２アクチュエータ、及び図示しない昇降機構を制御するための制御部５４を有する。また、有機物脱離装置５０は、ヘッド部５１が放射するＵＶ又はプラズマが矩形基板Ｓ１の中央側に拡散しないように、図２２に示すように、ヘッド部５１の矩形基板Ｓ１の中央側にＵＶ又はプラズマを遮蔽するためのマスク５７を有してもよい。 The organic substance detaching apparatus 50 further includes a head unit 51, a first actuator 53, a second actuator, and a control unit 54 for controlling a lifting mechanism (not shown). Further, as shown in FIG. 22, the organic substance detachment apparatus 50 has a UV on the center side of the rectangular substrate S1 of the head portion 51 so that UV or plasma emitted by the head portion 51 does not diffuse to the center side of the rectangular substrate S1. Alternatively, a mask 57 for shielding plasma may be provided.
　図２３Ａから図２３Ｅは、図２２に示した有機物脱離装置５０で矩形基板Ｓ１のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置５０の平面図である。図２３Ａに示すように、まず、有機物脱離装置５０は、図示しない昇降機構により、ヘッド部５１の鉛直方向の位置合わせをし、第２アクチュエータ５２により、ヘッド部５１の位置を矩形基板Ｓ１の４つのエッジ部のうちの一つに位置合わせする。続いて、有機物脱離装置５０の制御部５４は、ヘッド部５１及び第１アクチュエータ５３を制御して、ヘッド部５１からＵＶ又はプラズマを放射しながら、第１アクチュエータ５３により矩形基板Ｓ１のエッジ部に沿ってヘッド部５１を移動させて、エッジ部の一つを洗浄する。 FIG. 23A to FIG. 23E are plan views of the organic substance detaching apparatus 50 showing a process of detaching organic substances at the edge portion of the rectangular substrate S1 with the organic substance detaching apparatus 50 shown in FIG. As shown in FIG. 23A, first, the organic substance detaching apparatus 50 aligns the head unit 51 in the vertical direction by a lifting mechanism (not shown), and the second actuator 52 moves the position of the head unit 51 to the rectangular substrate S1. Align with one of the four edges. Subsequently, the control unit 54 of the organic substance detachment apparatus 50 controls the head unit 51 and the first actuator 53, and emits UV or plasma from the head unit 51, while the edge part of the rectangular substrate S <b> 1 is formed by the first actuator 53. The head portion 51 is moved along the surface to clean one of the edge portions.
　エッジ部の一つが洗浄されると、有機物脱離装置５０は、基板支持台５５（図２２参照）を回転させて、図２３Ｂに示すように矩形基板Ｓ１を９０度回転させる。このとき、制御部５４は、ヘッド部５１からのＵＶ又はプラズマの放射を停止させてから、基板支持台５５を回転させるように、ヘッド部５１及び基板支持台５５を制御する。言い換えれば、ヘッド部５１からのＵＶ又はプラズマの放射と基板支持台５５による矩形基板Ｓ１の回転とが同時に行われないように、ヘッド部５１及び基板支持台５５を制御する。これにより、矩形基板Ｓ１上の意図しない領域にＵＶ又はプラズマが放射されることを防止することができる。 When one of the edge portions is cleaned, the organic substance detaching apparatus 50 rotates the substrate support base 55 (see FIG. 22) to rotate the rectangular substrate S1 by 90 degrees as shown in FIG. 23B. At this time, the control unit 54 controls the head unit 51 and the substrate support 55 so that the substrate support 55 is rotated after the emission of UV or plasma from the head 51 is stopped. In other words, the head unit 51 and the substrate support 55 are controlled so that the radiation of UV or plasma from the head unit 51 and the rotation of the rectangular substrate S1 by the substrate support 55 are not performed simultaneously. Thereby, it is possible to prevent UV or plasma from being radiated to an unintended region on the rectangular substrate S1.
　図２３Ｂに示すように、有機物脱離装置５０は、ＵＶ又はプラズマの放射を停止させたまま、第２アクチュエータ５２により、ヘッド部５１を矩形基板Ｓ１のエッジ部に位置合わせする。本実施形態では、第２アクチュエータ５２を有するので、図２３Ａから図２３Ｅに示すように矩形基板Ｓ１が長辺と短辺を有する場合であっても、ヘッド部５１を矩形基板Ｓ１のエッジ部に位置合わせすることができる。 As shown in FIG. 23B, the organic substance detachment apparatus 50 aligns the head portion 51 with the edge portion of the rectangular substrate S1 by the second actuator 52 while stopping the emission of UV or plasma. In the present embodiment, since the second actuator 52 is provided, even if the rectangular substrate S1 has a long side and a short side as shown in FIGS. 23A to 23E, the head portion 51 is placed on the edge portion of the rectangular substrate S1. Can be aligned.
　続いて、有機物脱離装置５０は、ヘッド部５１からＵＶ又はプラズマを放射しながら、第１アクチュエータ５３により矩形基板Ｓ１のエッジ部に沿ってヘッド部５１を移動させて、エッジ部の他の一つを洗浄する。同様に、図２３Ｃ及び図２３Ｄに示すように、有機物脱離装置５０は、エッジ部の一つを洗浄するごとに、矩形基板Ｓ１を９０度回転させ、各エッジ部を洗浄する。 Subsequently, the organic substance detachment apparatus 50 moves the head part 51 along the edge part of the rectangular substrate S1 by the first actuator 53 while radiating UV or plasma from the head part 51, and performs another one of the edge parts. Wash one. Similarly, as shown in FIG. 23C and FIG. 23D, every time one of the edge portions is cleaned, the organic substance detaching apparatus 50 rotates the rectangular substrate S1 by 90 degrees to clean each edge portion.
　矩形基板Ｓ１の４辺のエッジ部の洗浄が終了すると、有機物脱離装置５０は、さらに矩形基板Ｓ１を９０度回転させて、矩形基板Ｓ１を図２３Ａと同一の位置（ホームポジション）に戻す（図２３Ｅ）。以上のように、矩形基板Ｓ１の４辺のエッジ部が洗浄される。図２２から図２３Ｅに示す有機物脱離装置５０においては、一組の第１アクチュエータ５３、第２アクチュエータ５２、及びヘッド部５１を有するものとしているが、これらを複数組有してもよい。その場合は、エッジ部の洗浄に要する時間を低減させることができる。 When the cleaning of the four edge portions of the rectangular substrate S1 is completed, the organic substance detaching apparatus 50 further rotates the rectangular substrate S1 by 90 degrees to return the rectangular substrate S1 to the same position (home position) as FIG. 23A ( FIG. 23E). As described above, the edge portions on the four sides of the rectangular substrate S1 are cleaned. In the organic substance detachment apparatus 50 shown in FIGS. 22 to 23E, a set of the first actuator 53, the second actuator 52, and the head unit 51 is provided, but a plurality of sets may be provided. In that case, the time required for cleaning the edge portion can be reduced.
　図２４は、フィキシングユニット１２０に設けられる有機物脱離装置５０の他の一例の概略側面図である。図２４に示す有機物脱離装置５０では、図２２に示した有機物脱離装置５０と異なり、基板支持台５５が回転しないように構成される。その代り、図２４に示す有機物脱離装置５０は、ヘッド部５１、第１アクチュエータ５３、及び第２アクチュエータ５２を旋回させる旋回軸５６を有する。旋回軸５６は、その中心軸が矩形基板Ｓ１の略中心を通過するように位置決めされる。ヘッド部５１、第１アクチュエータ５３、及び第２アクチュエータ５２は、図２４に示すようにヘッド部５１が矩形基板Ｓ１のエッジ部の上方に位置することができるように、直接的又は間接的に旋回軸５６に接続される。制御部５４は、ヘッド部５１、第１アクチュエータ５３、及び第２アクチュエータ５２に加えて、旋回軸５６の駆動も制御する。 FIG. 24 is a schematic side view of another example of the organic substance detachment apparatus 50 provided in the fixing unit 120. The organic substance detachment apparatus 50 shown in FIG. 24 is configured so that the substrate support base 55 does not rotate, unlike the organic substance detachment apparatus 50 shown in FIG. Instead, the organic substance detaching apparatus 50 shown in FIG. 24 has a turning shaft 56 that turns the head portion 51, the first actuator 53, and the second actuator 52. The pivot axis 56 is positioned so that its central axis passes through the approximate center of the rectangular substrate S1. As shown in FIG. 24, the head 51, the first actuator 53, and the second actuator 52 pivot directly or indirectly so that the head 51 can be positioned above the edge of the rectangular substrate S1. Connected to the shaft 56. The control unit 54 controls driving of the turning shaft 56 in addition to the head unit 51, the first actuator 53, and the second actuator 52.
　図２５Ａから図２５Ｅは、図２４に示した有機物脱離装置５０で矩形基板Ｓ１のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置５０の平面図である。図２５Ａに示すように、まず、有機物脱離装置５０は、図示しない昇降機構により、ヘッド部５１の鉛直方向の位置合わせをし、旋回軸５６及び第２アクチュエータ５２により、ヘッド部５１の位置を矩形基板Ｓ１の４つのエッジ部のうちの一つに位置合わせする。続いて、有機物脱離装置５０の制御部５４は、ヘッド部５１及び第１アクチュエータ５３を制御して、ヘッド部５１からＵＶ又はプラズマを放射しながら、第１アクチュエータ５３により矩形基板Ｓ１のエッジ部に沿ってヘッド部５１を移動させて、エッジ部の一つを洗浄する。 25A to 25E are plan views of the organic matter detachment apparatus 50 showing a process of detaching organic substances at the edge portion of the rectangular substrate S1 by the organic matter detachment apparatus 50 shown in FIG. As shown in FIG. 25A, first, the organic substance detaching apparatus 50 aligns the head unit 51 in the vertical direction by a lifting mechanism (not shown), and moves the position of the head unit 51 by the turning shaft 56 and the second actuator 52. Align with one of the four edge portions of the rectangular substrate S1. Subsequently, the control unit 54 of the organic substance detachment apparatus 50 controls the head unit 51 and the first actuator 53, and emits UV or plasma from the head unit 51, while the edge part of the rectangular substrate S <b> 1 is formed by the first actuator 53. The head portion 51 is moved along the surface to clean one of the edge portions.
　エッジ部の一つが洗浄されると、有機物脱離装置５０は、旋回軸５６を回転させて、図２５Ｂに示すようにヘッド部５１を９０度旋回させる。このとき、制御部５４は、ヘッド部５１からのＵＶ又はプラズマの放射を停止させてから、ヘッド部５１を旋回させるように、ヘッド部５１及び旋回軸５６を制御する。言い換えれば、ヘッド部５１からのＵＶ又はプラズマの放射と旋回軸５６によるヘッド部５１の旋回とが同時に行われないように、ヘッド部５１及び旋回軸５６を制御する。これにより、矩形基板Ｓ１上の意図しない領域にＵＶ又はプラズマが放射されることを防止することができる。 When one of the edge portions is cleaned, the organic substance detaching apparatus 50 rotates the turning shaft 56 to turn the head portion 51 by 90 degrees as shown in FIG. 25B. At this time, the control unit 54 controls the head unit 51 and the turning shaft 56 so as to turn the head unit 51 after stopping the emission of UV or plasma from the head unit 51. In other words, the head unit 51 and the turning shaft 56 are controlled so that the UV or plasma emission from the head unit 51 and the turning of the head unit 51 by the turning shaft 56 are not performed simultaneously. Thereby, it is possible to prevent UV or plasma from being radiated to an unintended region on the rectangular substrate S1.
　図２５Ｂに示すように、有機物脱離装置５０は、ＵＶ又はプラズマの放射を停止させたまま、第２アクチュエータ５２により、ヘッド部５１を矩形基板Ｓ１のエッジ部に位置合わせする。続いて、有機物脱離装置５０は、ヘッド部５１からＵＶ又はプラズマを放射しながら、第１アクチュエータ５３により矩形基板Ｓ１のエッジ部に沿ってヘッド部５１を移動させて、エッジ部の他の一つを洗浄する。同様に、図２５Ｃ及び図２５Ｄに示すように、有機物脱離装置５０は、エッジ部の一つを洗浄するごとに、旋回軸５６を中心にヘッド部５１を９０度旋回させ、各エッジ部を洗浄する。 As shown in FIG. 25B, the organic substance detachment apparatus 50 aligns the head part 51 with the edge part of the rectangular substrate S1 by the second actuator 52 while stopping the emission of UV or plasma. Subsequently, the organic substance detachment apparatus 50 moves the head part 51 along the edge part of the rectangular substrate S1 by the first actuator 53 while radiating UV or plasma from the head part 51, and performs another one of the edge parts. Wash one. Similarly, as shown in FIGS. 25C and 25D, every time one of the edge portions is cleaned, the organic substance detaching apparatus 50 turns the head portion 51 about the turning shaft 56 by 90 degrees, Wash.
　矩形基板Ｓ１の４辺のエッジ部の洗浄が終了すると、有機物脱離装置５０は、さらにヘッド部５１を９０度旋回させて、ヘッド部を図２５Ａと同一の位置（ホームポジション）に戻す（図２５Ｅ）。以上のように、矩形基板Ｓ１の４辺のエッジ部が洗浄される。図２４から図２５Ｅに示す有機物脱離装置５０においては、一組の旋回軸５６、第１アクチュエータ５３、第２アクチュエータ５２、及びヘッド部５１を有するものとしているが、これらを複数組有してもよい。その場合は、エッジ部の洗浄に要する時間を低減させることができる。 When the cleaning of the edge portions on the four sides of the rectangular substrate S1 is completed, the organic substance detaching apparatus 50 further turns the head portion 51 by 90 degrees to return the head portion to the same position (home position) as FIG. 25E). As described above, the edge portions on the four sides of the rectangular substrate S1 are cleaned. The organic substance detachment apparatus 50 shown in FIGS. 24 to 25E has a set of turning shafts 56, a first actuator 53, a second actuator 52, and a head unit 51. Also good. In that case, the time required for cleaning the edge portion can be reduced.
　図２６は、フィキシングユニット１２０に設けられる有機物脱離装置５０の他の一例の概略側面図である。図２６に示す有機物脱離装置５０では、図２２に示した有機物脱離装置５０と異なり、ヘッド部が２つ設けられる。即ち、有機物脱離装置５０は、第１ヘッド部５１ａと、第２ヘッド部５１ｂと、第１ヘッド部５１ａ及び第２ヘッド部５１ｂに対応する２つの第２アクチュエータ５２ａ，５２ｂを有する。図２６に示すように、第１ヘッド部５１ａと第２ヘッド部５１ｂは、第１アクチュエータ５３を挟んで互いに対向する位置に設けられる。したがって、第１ヘッド部５１ａ及び第２ヘッド部は、第２アクチュエータ５２ａ，５２ｂにより互いに同一方向に往復動することができる。 FIG. 26 is a schematic side view of another example of the organic substance detachment apparatus 50 provided in the fixing unit 120. 26 differs from the organic matter detachment apparatus 50 shown in FIG. 22 in that two head units are provided. That is, the organic substance detachment apparatus 50 includes a first head part 51a, a second head part 51b, and two second actuators 52a and 52b corresponding to the first head part 51a and the second head part 51b. As shown in FIG. 26, the first head portion 51a and the second head portion 51b are provided at positions facing each other with the first actuator 53 interposed therebetween. Accordingly, the first head portion 51a and the second head portion can reciprocate in the same direction by the second actuators 52a and 52b.
　図２７Ａから図２７Ｃは、図２６に示した有機物脱離装置５０で矩形基板Ｓ１のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置５０の平面図である。図２７Ａに示すように、まず、有機物脱離装置５０は、図示しない昇降機構により、ヘッド部５１の鉛直方向の位置合わせをし、第２アクチュエータ５２ａ，５２ｂにより、第１ヘッド部５１ａ及び第２ヘッド部５１ｂの位置を矩形基板Ｓ１の４つのエッジ部のうちの対向する二つに位置合わせする。続いて、有機物脱離装置５０の制御部５４は、第１ヘッド部５１ａ及び第２ヘッド部５１ｂ並びに第１アクチュエータ５３を制御して、第１ヘッド部５１ａ及び第２ヘッド部５１ｂからＵＶ又はプラズマを放射しながら、第１アクチュエータ５３により矩形基板Ｓ１のエッジ部に沿って第１ヘッド部５１ａ及び第２ヘッド部５１ｂを移動させて、対向する二つのエッジ部を洗浄する。 FIGS. 27A to 27C are plan views of the organic substance detaching apparatus 50 showing a process of detaching organic substances at the edge portion of the rectangular substrate S1 with the organic substance detaching apparatus 50 shown in FIG. As shown in FIG. 27A, first, the organic substance detaching apparatus 50 aligns the head portion 51 in the vertical direction by a lifting mechanism (not shown), and the first head portion 51a and the second head portion 52b by the second actuators 52a and 52b. The position of the head portion 51b is aligned with two of the four edge portions of the rectangular substrate S1 that face each other. Subsequently, the control unit 54 of the organic matter detachment apparatus 50 controls the first head unit 51a, the second head unit 51b, and the first actuator 53, and performs UV or plasma from the first head unit 51a and the second head unit 51b. The first actuator 53 moves the first head portion 51a and the second head portion 51b along the edge portion of the rectangular substrate S1 to clean the two opposing edge portions.
　対向する二つのエッジ部が洗浄されると、有機物脱離装置５０は、基板支持台５５（図２６参照）を回転させて、図２７Ｂに示すように矩形基板Ｓ１を９０度回転させる。このとき、制御部５４は、第１ヘッド部５１ａ及び第２ヘッド部５１ｂからのＵＶ又はプラズマの放射を停止させてから、基板支持台５５を回転させるように、第１ヘッド部５１ａ及び第２ヘッド部５１ｂ並びに基板支持台５５を制御する。これにより、矩形基板Ｓ１上の意図しない領域にＵＶ又はプラズマが放射されることを防止することができる。 When the two opposing edge portions are cleaned, the organic substance detachment apparatus 50 rotates the substrate support base 55 (see FIG. 26) to rotate the rectangular substrate S1 by 90 degrees as shown in FIG. 27B. At this time, the control unit 54 stops the radiation of UV or plasma from the first head unit 51a and the second head unit 51b, and then rotates the substrate support base 55 so that the first head unit 51a and the second head unit 51 are rotated. The head unit 51b and the substrate support base 55 are controlled. Thereby, it is possible to prevent UV or plasma from being radiated to an unintended region on the rectangular substrate S1.
　図２７Ｂに示すように、有機物脱離装置５０は、ＵＶ又はプラズマの放射を停止させたまま、第２アクチュエータ５２ａ，５２ｂにより、第１ヘッド部５１ａ及び第２ヘッド部５１ｂを矩形基板Ｓ１の対向する二つのエッジ部に位置合わせする。続いて、有機物脱離装置５０は、第１ヘッド部５１ａ及び第２ヘッド部５１ｂからＵＶ又はプラズマを放射しながら、第１アクチュエータ５３により矩形基板Ｓ１のエッジ部に沿って第１ヘッド部５１ａ及び第２ヘッド部５１ｂを移動させて、対向する二つのエッジ部を洗浄する。 As shown in FIG. 27B, the organic substance detachment apparatus 50 opposes the first head part 51a and the second head part 51b to the rectangular substrate S1 by the second actuators 52a and 52b while stopping the emission of UV or plasma. Align with the two edges. Subsequently, the organic substance detachment apparatus 50 radiates UV or plasma from the first head part 51a and the second head part 51b, and the first head part 51a and the second head part 51b along the edge part of the rectangular substrate S1 by the first actuator 53. The second head portion 51b is moved to clean the two opposing edge portions.
　矩形基板Ｓ１の４辺のエッジ部の洗浄が終了すると、有機物脱離装置５０は、さらに矩形基板Ｓ１を２７０度回転させて、矩形基板Ｓ１を図２７Ａと同一の位置（ホームポジション）に戻す（図２７Ｃ）。以上のように、矩形基板Ｓ１の４辺のエッジ部が洗浄される。図２６及び図２７Ａ－２７Ｃに示す有機物脱離装置５０は、第１ヘッド部５１ａ及び第２ヘッド部５１ｂを有する。このため、図２２及び図２３Ａ－２３Ｅに示した有機物脱離装置５０に比べて、ＵＶ又はプラズマを矩形基板Ｓ１に照射する時間、及び矩形基板Ｓ１を回転させる時間を低減させることができる。また、図２６から図２７Ｃに示す有機物脱離装置５０においては、一組の第１アクチュエータ５３、第２アクチュエータ５２ａ，５２ｂ、第１ヘッド部５１ａ、及び第２ヘッド部５１ｂを有するものとしているが、これらを複数組有してもよい。その場合は、エッジ部の洗浄に要する時間を低減させることができる。 When the cleaning of the edge portions of the four sides of the rectangular substrate S1 is completed, the organic substance detaching apparatus 50 further rotates the rectangular substrate S1 by 270 degrees to return the rectangular substrate S1 to the same position (home position) as FIG. 27A ( FIG. 27C). As described above, the edge portions on the four sides of the rectangular substrate S1 are cleaned. The organic substance detachment apparatus 50 shown in FIGS. 26 and 27A-27C includes a first head part 51a and a second head part 51b. For this reason, the time for irradiating the rectangular substrate S1 with UV or plasma and the time for rotating the rectangular substrate S1 can be reduced as compared with the organic substance detachment apparatus 50 shown in FIGS. 22 and 23A-23E. The organic substance detaching apparatus 50 shown in FIGS. 26 to 27C includes a pair of first actuator 53, second actuators 52a and 52b, a first head portion 51a, and a second head portion 51b. A plurality of these may be provided. In that case, the time required for cleaning the edge portion can be reduced.
　図２８は、フィキシングユニット１２０に設けられる有機物脱離装置５０の他の一例の概略側面図である。図２８に示す有機物脱離装置５０では、図２４に示した有機物脱離装置５０と異なり、ヘッド部が２つ設けられる。即ち、有機物脱離装置５０は、第１ヘッド部５１ａと、第２ヘッド部５１ｂと、第１ヘッド部５１ａ及び第２ヘッド部５１ｂに対応する２つの第２アクチュエータ５２ａ，５２ｂを有する。図２８に示すように、第１ヘッド部５１ａと第２ヘッド部５１ｂは、第１アクチュエータ５３を挟んで互いに対向する位置に設けられる。したがって、第１ヘッド部５１ａ及び第２ヘッド部５１ｂは、第２アクチュエータ５２ａ，５２ｂにより互いに同一方向に往復動することができる。 FIG. 28 is a schematic side view of another example of the organic substance detaching apparatus 50 provided in the fixing unit 120. FIG. In the organic substance detaching apparatus 50 shown in FIG. 28, two head units are provided unlike the organic substance detaching apparatus 50 shown in FIG. That is, the organic substance detachment apparatus 50 includes a first head part 51a, a second head part 51b, and two second actuators 52a and 52b corresponding to the first head part 51a and the second head part 51b. As shown in FIG. 28, the first head portion 51a and the second head portion 51b are provided at positions facing each other with the first actuator 53 interposed therebetween. Accordingly, the first head portion 51a and the second head portion 51b can reciprocate in the same direction by the second actuators 52a and 52b.
　図２９Ａから図２９Ｃは、図２８に示した有機物脱離装置５０で矩形基板Ｓ１のエッジ部の有機物を脱離するプロセスを示す有機物脱離装置５０の平面図である。図２９Ａに示すように、まず、有機物脱離装置５０は、図示しない昇降機構により、第１ヘッド部５１ａ及び第２ヘッド部５１ｂの鉛直方向の位置合わせをし、旋回軸５６及び第２アクチュエータ５２ａ，５２ｂにより、第１ヘッド部５１ａ及び第２ヘッド部５１ｂの位置を矩形基板Ｓ１の対向する二つのエッジ部に位置合わせする。続いて、有機物脱離装置５０の制御部５４は、第１ヘッド部５１ａ及び第２ヘッド部５１ｂ並びに第１アクチュエータ５３を制御して、第１ヘッド部５１ａ及び第２ヘッド部５１ｂからＵＶ又はプラズマを放射しながら、第１アクチュエータ５３により矩形基板Ｓ１のエッジ部に沿って第１ヘッド部５１ａ及び第２ヘッド部５１ｂを移動させて、エッジ部の一つを洗浄する。 FIGS. 29A to 29C are plan views of the organic substance detaching apparatus 50 showing a process of detaching organic substances from the edge portion of the rectangular substrate S1 by the organic substance detaching apparatus 50 shown in FIG. As shown in FIG. 29A, first, the organic substance detaching apparatus 50 aligns the first head part 51a and the second head part 51b in the vertical direction by an elevating mechanism (not shown), and the turning shaft 56 and the second actuator 52a. , 52b align the positions of the first head portion 51a and the second head portion 51b with the two opposing edge portions of the rectangular substrate S1. Subsequently, the control unit 54 of the organic matter detachment apparatus 50 controls the first head unit 51a, the second head unit 51b, and the first actuator 53, and performs UV or plasma from the first head unit 51a and the second head unit 51b. The first actuator 53 moves the first head portion 51a and the second head portion 51b along the edge portion of the rectangular substrate S1, and cleans one of the edge portions.
　対向する二つのエッジ部が洗浄されると、有機物脱離装置５０は、旋回軸５６を回転させて、図２９Ｂに示すように第１ヘッド部５１ａ及び第２ヘッド部５１ｂを９０度旋回させる。このとき、制御部５４は、第１ヘッド部５１ａ及び第２ヘッド部５１ｂからのＵＶ又はプラズマの放射を停止させてから第１ヘッド部５１ａ及び第２ヘッド部５１ｂを旋回させるように、第１ヘッド部５１ａ及び第２ヘッド部５１ｂ及び旋回軸５６を制御する。これにより、矩形基板Ｓ１上の意図しない領域にＵＶ又はプラズマが放射されることを防止することができる。 When the two opposing edge portions are cleaned, the organic substance detaching apparatus 50 rotates the turning shaft 56 to turn the first head portion 51a and the second head portion 51b by 90 degrees as shown in FIG. 29B. At this time, the control unit 54 stops the radiation of UV or plasma from the first head unit 51a and the second head unit 51b, and then turns the first head unit 51a and the second head unit 51b. The head unit 51a, the second head unit 51b, and the turning shaft 56 are controlled. Thereby, it is possible to prevent UV or plasma from being radiated to an unintended region on the rectangular substrate S1.
　図２９Ｂに示すように、有機物脱離装置５０は、ＵＶ又はプラズマの放射を停止させたまま、第２アクチュエータ５２ａ，５２ｂにより、第１ヘッド部５１ａ及び第２ヘッド部５１ｂを矩形基板Ｓ１のエッジ部に位置合わせする。続いて、有機物脱離装置５０は、第１ヘッド部５１ａ及び第２ヘッド部５１ｂからＵＶ又はプラズマを放射しながら、第１アクチュエータ５３により矩形基板Ｓ１のエッジ部に沿って第１ヘッド部５１ａ及び第２ヘッド部５１ｂを移動させて、対向する二つのエッジ部を洗浄する。 As shown in FIG. 29B, the organic substance detachment apparatus 50 moves the first head part 51a and the second head part 51b to the edge of the rectangular substrate S1 by the second actuators 52a and 52b while stopping the emission of UV or plasma. Align with the part. Subsequently, the organic substance detachment apparatus 50 radiates UV or plasma from the first head part 51a and the second head part 51b, and the first head part 51a and the second head part 51b along the edge part of the rectangular substrate S1 by the first actuator 53. The second head portion 51b is moved to clean the two opposing edge portions.
　矩形基板Ｓ１の４辺のエッジ部の洗浄が終了すると、有機物脱離装置５０は、さらに第１ヘッド部５１ａ及び第２ヘッド部５１ｂを２７０度旋回させて、第１ヘッド部５１ａ及び第２ヘッド部５１ｂを図２９Ａと同一の位置（ホームポジション）に戻す（図２９Ｃ）。以上のように、矩形基板Ｓ１の４辺のエッジ部が洗浄される。図２８及び図２９Ａ－２９Ｃに示す有機物脱離装置５０は、第１ヘッド部５１ａ及び第２ヘッド部５１ｂを有する。このため、図２４及び図２５Ａ－２５Ｅに示した有機物脱離装置５０に比べて、ＵＶ又はプラズマを矩形基板Ｓ１に照射する時間、及びヘッド部を回転させる時間を低減させることができる。また、図２８から図２９Ｃに示す有機物脱離装置５０においては、一組の旋回軸５６、第１アクチュエータ５３、第２アクチュエータ５２ａ，５２ｂ、第１ヘッド部５１ａ、及び第２ヘッド部５１ｂを有するものとしているが、これらを複数組有してもよい。その場合は、エッジ部の洗浄に要する時間を低減させることができる。 When the cleaning of the edge portions on the four sides of the rectangular substrate S1 is completed, the organic substance detaching apparatus 50 further rotates the first head portion 51a and the second head portion 51b by 270 degrees to thereby form the first head portion 51a and the second head. The part 51b is returned to the same position (home position) as FIG. 29A (FIG. 29C). As described above, the edge portions on the four sides of the rectangular substrate S1 are cleaned. The organic substance detaching apparatus 50 shown in FIGS. 28 and 29A-29C includes a first head part 51a and a second head part 51b. For this reason, the time for irradiating the rectangular substrate S1 with UV or plasma and the time for rotating the head portion can be reduced as compared with the organic substance detachment apparatus 50 shown in FIGS. 24 and 25A-25E. In addition, the organic substance detaching apparatus 50 shown in FIGS. 28 to 29C includes a pair of turning shafts 56, a first actuator 53, second actuators 52a and 52b, a first head portion 51a, and a second head portion 51b. However, a plurality of sets of these may be provided. In that case, the time required for cleaning the edge portion can be reduced.
　以上で説明した第６実施形態の有機物脱離装置５０がＵＶ照射装置である場合において、ＵＶ光源としては、例えば、高圧水銀ランプ、低圧水銀ランプ、ブラックライト、又はＵＶ領域の光を放射可能なレーザー光源等を採用することができる。高圧水銀ランプ、低圧水銀ランプ、及びブラックライトは光が発散する傾向を有するので、これらの光源を採用する場合は、光源を基板Ｗの近傍に設置するか、光学系を用いてエッジ部のみにＵＶを照射するようにすることが好ましい。有機物脱離装置５０がプラズマ放射装置である場合は、例えば大気リモートプラズマ装置等を採用することができる。 When the organic substance detachment apparatus 50 of the sixth embodiment described above is a UV irradiation apparatus, the UV light source can emit, for example, a high pressure mercury lamp, a low pressure mercury lamp, a black light, or light in the UV region. A laser light source or the like can be employed. High-pressure mercury lamps, low-pressure mercury lamps, and black lights tend to diverge light, so when using these light sources, install the light source near the substrate W or use only an optical system at the edge. It is preferable to irradiate UV. When the organic substance detachment device 50 is a plasma radiation device, for example, an atmospheric remote plasma device or the like can be employed.
　第６実施形態において、有機物脱離装置５０は、フィキシングユニット１２０に設けられるものとして説明したが、これに限らず、他のユニットに設けられてもよいし、別途独立した装置としてめっき装置内に設けられてもよい。また、有機物脱離装置５０は、矩形基板の４辺のエッジ部を洗浄するものとしたが、例えば対向する２辺のエッジ部のみを洗浄するようにしてもよい。その場合、矩形基板Ｓ１の回転回数又はヘッド部５１の旋回回数を減少させることができる。また、図２２に示したマスク５７は、図２４から図２９Ｃに示した他の有機物脱離装置５０においても採用することができる。 In the sixth embodiment, the organic substance detachment apparatus 50 has been described as being provided in the fixing unit 120. However, the organic substance detachment apparatus 50 is not limited thereto, and may be provided in another unit, or may be provided as a separate independent apparatus in the plating apparatus. It may be provided. Moreover, although the organic substance detachment | desorption apparatus 50 shall wash | clean the edge part of 4 sides of a rectangular substrate, you may make it wash | clean only the edge part of 2 sides which oppose, for example. In that case, the number of rotations of the rectangular substrate S1 or the number of turns of the head unit 51 can be reduced. Further, the mask 57 shown in FIG. 22 can also be employed in the other organic substance detachment apparatus 50 shown in FIGS. 24 to 29C.
　以上、本発明の実施形態について説明したが、上述した発明の実施の形態は、本発明の理解を容易にするためのものであり、本発明を限定するものではない。本発明は、その趣旨を逸脱することなく、変更、改良され得るとともに、本発明にはその等価物が含まれることはもちろんである。また、上述した課題の少なくとも一部を解決できる範囲、または、効果の少なくとも一部を奏する範囲において、特許請求の範囲及び明細書に記載された各構成要素の任意の組み合わせ、又は省略が可能である。例えば、図１ないし図１９において説明した、基板Ｗのエッジ部を洗浄する有機物脱離装置４５、酸化膜除去装置２４、及びスポンジ洗浄装置８０は、任意に組み合わせることができる。 As mentioned above, although embodiment of this invention was described, embodiment of the invention mentioned above is for making an understanding of this invention easy, and does not limit this invention. The present invention can be changed and improved without departing from the gist thereof, and the present invention includes the equivalents thereof. In addition, any combination or omission of each component described in the claims and the specification is possible within a range where at least a part of the above-described problems can be solved or a range where at least a part of the effect can be achieved. is there. For example, the organic substance desorbing device 45, the oxide film removing device 24, and the sponge cleaning device 80 for cleaning the edge portion of the substrate W described in FIGS. 1 to 19 can be arbitrarily combined.
　１０　めっき槽
　２０　スピンリンスドライヤ
　２４，９４　酸化膜除去装置
　２５　薬液ノズル
　２８　薬液
　４０　アライナ
　４５　有機物脱離装置
　５０　有機物脱離装置
　５１　ヘッド部
　５１ａ　第１ヘッド部
　５１ｂ　第２ヘッド部
　５２，５２ａ，５２ｂ　第２アクチュエータ
　５３　第１アクチュエータ
　５４　制御部
　５５　基板支持台
　５６　旋回軸
　６０　基板ホルダ
　８０　スポンジ洗浄装置
　８４　スポンジ洗浄部 DESCRIPTION OF SYMBOLS 10 Plating tank 20 Spin rinse dryer 24, 94 Oxide film removal apparatus 25 Chemical liquid nozzle 28 Chemical liquid 40 Aligner 45 Organic substance detachment apparatus 50 Organic substance detachment apparatus 51 Head part 51a First head part 51b Second head part 52, 52a, 52b First 2 Actuator 53 First Actuator 54 Control Unit 55 Substrate Supporting Board 56 Rotating Shaft 60 Substrate Holder 80 Sponge Cleaning Device 84 Sponge Cleaning Unit

Claims (32)

  1. 　基板にめっきを行うめっき装置であって、
    　前記基板のエッジ部に存在する有機物及び酸化膜の少なくともいずれか１つを局所的に除去するエッジ部洗浄装置と、
    　めっき液を収容し、基板とアノードとを該めっき液に浸漬させた状態で該基板と該アノード間に電圧を印加してめっきを行うためのめっき槽と、を有する、めっき装置。     A plating apparatus for plating a substrate,
    An edge cleaning apparatus that locally removes at least one of an organic substance and an oxide film present on the edge of the substrate;
    A plating apparatus comprising: a plating tank for containing a plating solution and performing plating by applying a voltage between the substrate and the anode while the substrate and the anode are immersed in the plating solution.
  2. 　請求項１に記載されためっき装置において、
    　前記エッジ部洗浄装置は、
    　前記基板のエッジ部に存在する有機物を局所的に脱離する有機物脱離装置を含み、
    　前記有機物脱離装置は、回転する前記基板のエッジ部にＵＶを照射するＵＶ照射装置又は回転する前記基板のエッジ部にプラズマを放射するプラズマ放射装置を含む、めっき装置。     The plating apparatus according to claim 1,
    The edge cleaning apparatus is
    Including an organic substance detaching device that locally desorbs organic substances present at the edge of the substrate,
    The organic substance detachment apparatus includes a UV irradiation apparatus that irradiates UV to an edge portion of the rotating substrate or a plasma irradiation apparatus that radiates plasma to an edge portion of the rotating substrate.
  3. 　請求項２に記載されためっき装置において、
    前記基板を回転させて前記基板の向きを整列するアライナを有し、
    　前記有機物脱離装置は、前記アライナに設けられる、めっき装置。     The plating apparatus according to claim 2,
    An aligner that rotates the substrate to align the orientation of the substrate;
    The organic substance detachment apparatus is a plating apparatus provided in the aligner.
  4. 　請求項２に記載されためっき装置において、
    　前記ＵＶ照射装置又は前記プラズマ放射装置は、前記基板の上方から該基板のエッジ部に局所的にＵＶ又はプラズマを適用できる位置に配置された、めっき装置。     The plating apparatus according to claim 2,
    The said UV irradiation apparatus or the said plasma radiation apparatus is a plating apparatus arrange | positioned in the position which can apply UV or a plasma locally from the upper direction of the said board | substrate to the edge part of this board | substrate.
  5. 　請求項１に記載されためっき装置において、
    　前記エッジ部洗浄装置は、前記基板のエッジ部に存在する酸化膜を局所的に除去する酸化膜除去装置を含み、
    　前記酸化膜除去装置は、回転する前記基板のエッジ部に薬液を供給する薬液ノズルを備えた薬液洗浄装置を含む、めっき装置。     The plating apparatus according to claim 1,
    The edge portion cleaning device includes an oxide film removing device that locally removes an oxide film present on the edge portion of the substrate,
    The said oxide film removal apparatus is a plating apparatus containing the chemical | medical solution cleaning apparatus provided with the chemical | medical solution nozzle which supplies a chemical | medical solution to the edge part of the said board | substrate to rotate.
  6. 　請求項５に記載されためっき装置において、
    　前記薬液は、３ｗｔ％以上１５ｗｔ％以下の希硫酸又は２ｗｔ％以上２０ｗｔ％以下のクエン酸を含む、めっき装置。     The plating apparatus according to claim 5, wherein
    The said chemical | medical solution is a plating apparatus containing 3 wt% or more and 15 wt% or less of dilute sulfuric acid, or 2 wt% or more and 20 wt% or less of citric acid.
  7. 　請求項５に記載されためっき装置において、
    　前記基板を回転させて、乾燥させるように構成されるスピンリンスドライヤを有し、
    　前記酸化膜除去装置は、前記スピンリンスドライヤに設けられる、めっき装置。     The plating apparatus according to claim 5, wherein
    A spin rinse dryer configured to rotate and dry the substrate;
    The oxide film removing apparatus is a plating apparatus provided in the spin rinse dryer.
  8. 　請求項５に記載されためっき装置において、
    　前記薬液洗浄装置は、前記基板の上方から該基板のエッジ部に局所的に薬液を供給できる位置に配置された、めっき装置。     The plating apparatus according to claim 5, wherein
    The chemical cleaning apparatus is a plating apparatus arranged at a position where a chemical can be locally supplied from above the substrate to an edge portion of the substrate.
  9. 　請求項１に記載されためっき装置において、
    　前記基板のエッジ部に存在するパーティクルを除去するスポンジ洗浄装置を有する、めっき装置。     The plating apparatus according to claim 1,
    A plating apparatus having a sponge cleaning device for removing particles present on an edge portion of the substrate.
  10. 　請求項１に記載されためっき装置において、
    　前記エッジ部に存在した有機物及び酸化膜の少なくともいずれか１つが局所的に除去された基板の前記エッジ部に光を照射するとともに、反射する光の強度又は吸光度を測定するように構成されたセンサを備えた、めっき装置。     The plating apparatus according to claim 1,
    A sensor configured to irradiate light to the edge portion of the substrate from which at least one of the organic substance and the oxide film existing in the edge portion is locally removed, and to measure the intensity or absorbance of the reflected light. A plating apparatus comprising:
  11. 　基板にめっきを行うめっき方法であって、
    　前記基板のエッジ部に存在する有機物及び酸化膜の少なくともいずれか１つを局所的に除去する除去工程と、
    　前記基板を基板ホルダに保持する工程と、
    　前記基板ホルダに保持された前記基板にめっき処理を行う工程と、を有する、めっき方法。     A plating method for plating a substrate,
    A removal step of locally removing at least one of the organic substance and the oxide film present on the edge portion of the substrate;
    Holding the substrate on a substrate holder;
    Performing a plating process on the substrate held by the substrate holder.
  12. 　請求項１１に記載されためっき方法において、
    　レジストパターンを前記基板に形成する工程と、
    　前記レジストパターンをアッシングするアッシング工程と、を有し、
    　前記除去工程は、前記アッシング工程の後に実行される、めっき方法。     In the plating method according to claim 11,
    Forming a resist pattern on the substrate;
    An ashing step of ashing the resist pattern,
    The said removal process is a plating method performed after the said ashing process.
  13. 　請求項１１に記載されためっき方法において、
    　前記除去工程は、前記基板のエッジ部に局所的にＵＶ又はプラズマを放射する工程を含む、めっき方法。     In the plating method according to claim 11,
    The plating method, wherein the removing step includes a step of locally radiating UV or plasma to an edge portion of the substrate.
  14. 　請求項１１に記載されためっき方法において、
    　前記除去工程は、前記基板のエッジ部に局所的に薬液を供給する工程を含む、めっき方法。     In the plating method according to claim 11,
    The said removal process is a plating method including the process of supplying a chemical | medical solution locally to the edge part of the said board | substrate.
  15. 　請求項１４に記載されためっき方法において、
    　前記薬液は、３ｗｔ％以上１５ｗｔ％以下の希硫酸又は２ｗｔ％以上２０ｗｔ％以下のクエン酸を含む、めっき方法。     The plating method according to claim 14, wherein
    The said chemical | medical solution is a plating method containing 3 to 15 wt% dilute sulfuric acid or 2 to 20 wt% citric acid.
  16. 　請求項１１に記載されためっき方法において、
    　回転する前記基板のエッジ部にスポンジヘッドを接触させて、パーティクルを除去する工程を有する、めっき方法。     In the plating method according to claim 11,
    A plating method comprising a step of removing particles by bringing a sponge head into contact with an edge portion of the rotating substrate.
  17. 　請求項１１に記載されためっき方法において、
    　前記除去工程は、前記基板のエッジ部に存在する有機物を局所的に脱離した後、前記酸化膜を局所的に除去する工程を含む、めっき方法。     In the plating method according to claim 11,
    The removing step includes a step of locally removing the oxide film after locally desorbing organic substances present at an edge portion of the substrate.
  18. 　請求項１１に記載されためっき方法において、
    　前記除去工程は、前記基板の周縁部から基板中心に向かって２ｍｍの範囲内に存在する有機物及び酸化膜の少なくともいずれか１つを局所的に除去する工程を含む、めっき方法。     In the plating method according to claim 11,
    The said removal process is a plating method including the process of removing locally at least any one of the organic substance and oxide film which exist in the range of 2 mm toward the substrate center from the peripheral part of the said board | substrate.
  19. 　請求項１１に記載されためっき方法において、
    　前記除去工程は、前記基板が基板ホルダにより保持される際にシール部材でシールされる領域に隣接する、基板周縁部までの領域に存在する有機物及び酸化膜の少なくともいずれか１つを局所的に除去する工程を含む、めっき方法。     In the plating method according to claim 11,
    In the removing step, at least one of an organic substance and an oxide film existing in a region up to the peripheral edge of the substrate adjacent to a region sealed by a sealing member when the substrate is held by the substrate holder is locally applied. A plating method including a step of removing.
  20. 　請求項１１に記載されためっき方法において、
    　前記エッジ部に存在した有機物又は酸化膜の少なくともいずれか１つを局所的に除去した基板の前記エッジ部に光を照射して、反射する光の強度又は吸光度を測定する工程を有する、めっき方法。     In the plating method according to claim 11,
    A plating method comprising a step of measuring the intensity or absorbance of reflected light by irradiating the edge portion of the substrate from which at least one of the organic substance or oxide film existing in the edge portion has been locally removed with light. .
  21. 　基板にめっきを行うめっき装置であって、
    　基板ホルダに保持された前記基板に電圧を印加してめっきを行うためのめっき槽と、
    　前記基板のエッジ部に存在する有機物、酸化膜及びパーティクルの少なくともいずれか１つを局所的に除去するエッジ部洗浄装置と、を有する、めっき装置。     A plating apparatus for plating a substrate,
    A plating tank for performing plating by applying a voltage to the substrate held by the substrate holder;
    A plating apparatus, comprising: an edge cleaning apparatus that locally removes at least one of an organic substance, an oxide film, and particles present on the edge of the substrate.
  22. 　基板にめっきを行うめっき方法であって、
    　基板ホルダに保持される前の前記基板のエッジ部に存在する有機物、酸化膜及びパーティクルの少なくともいずれか１つを局所的に除去する除去工程と、
    　前記基板を基板ホルダに保持する工程と、
    　前記基板ホルダに保持された前記基板にめっき処理を行う工程と、を有する、めっき方法。     A plating method for plating a substrate,
    A removal step of locally removing at least one of organic substances, oxide films and particles present on the edge portion of the substrate before being held by the substrate holder;
    Holding the substrate on a substrate holder;
    Performing a plating process on the substrate held by the substrate holder.
  23. 　請求項１に記載されためっき装置において、
    　前記エッジ部洗浄装置は、
    　前記基板のエッジ部に存在する有機物を局所的に脱離する有機物脱離装置を含み、
    　前記有機物脱離装置は、前記基板のエッジ部にＵＶを照射するＵＶ照射装置又は前記基板のエッジ部にプラズマを放射するプラズマ放射装置を含む、めっき装置。     The plating apparatus according to claim 1,
    The edge cleaning apparatus is
    Including an organic substance detaching device that locally desorbs organic substances present at the edge of the substrate,
    The organic substance detachment apparatus includes a UV irradiation apparatus that irradiates UV to an edge portion of the substrate or a plasma emission apparatus that radiates plasma to an edge portion of the substrate.
  24. 　請求項２３に記載されためっき装置であって、
    　前記エッジ部洗浄装置は、
    　　前記基板のエッジ部に局所的にＵＶ又はプラズマを適用するように構成されたヘッド部と、
    　　前記ヘッド部を水平方向に移動させるアクチュエータを有する、めっき装置。     The plating apparatus according to claim 23, wherein
    The edge cleaning apparatus is
    A head portion configured to apply UV or plasma locally to an edge portion of the substrate;
    The plating apparatus which has an actuator which moves the said head part to a horizontal direction.
  25. 　請求項２４に記載されためっき装置であって、
    　前記アクチュエータは、第１方向に前記ヘッド部を移動させる第１アクチュエータと、前記第１方向と直交する第２方向に前記ヘッド部を移動させる第２アクチュエータと、を有する、めっき装置。     A plating apparatus according to claim 24, wherein
    The plating apparatus includes: a first actuator that moves the head portion in a first direction; and a second actuator that moves the head portion in a second direction orthogonal to the first direction.
  26. 　請求項２４に記載されためっき装置であって、
    　前記エッジ部洗浄装置は、前記ヘッド部及び前記アクチュエータを制御する制御部を有し、
    　前記アクチュエータは、前記基板のエッジ部に沿って前記ヘッド部を移動させるように構成され、
    　前記制御部は、前記ヘッド部によるＵＶ又はプラズマの放射と前記アクチュエータによる前記基板のエッジ部に沿った前記ヘッド部の移動とを同時に行うように、前記ヘッド部及び前記アクチュエータを制御する、めっき装置。     A plating apparatus according to claim 24, wherein
    The edge part cleaning apparatus has a control part for controlling the head part and the actuator,
    The actuator is configured to move the head portion along an edge portion of the substrate;
    The control unit controls the head unit and the actuator so as to simultaneously perform UV or plasma radiation by the head unit and movement of the head unit along the edge portion of the substrate by the actuator. .
  27. 　請求項２６に記載されためっき装置であって、
    　前記エッジ部洗浄装置は、前記ヘッド部を旋回させる旋回機構を有し、
    　前記制御部は、前記旋回機構による前記ヘッド部の旋回時には前記ヘッド部によるＵＶ又はプラズマの放射を停止させるように、前記ヘッド部及び前記旋回機構を制御する、めっき装置。     A plating apparatus according to claim 26, wherein
    The edge part cleaning apparatus has a turning mechanism for turning the head part,
    The said control part is a plating apparatus which controls the said head part and the said turning mechanism so that radiation of UV or a plasma by the said head part may be stopped at the time of the turning of the said head part by the said turning mechanism.
  28. 　請求項２６に記載されためっき装置であって、
    　前記エッジ部洗浄装置は、前記基板を回転させる回転機構と、前記ヘッド部、前記回転機構、及び前記アクチュエータを制御する制御部と、を有し、
    　前記制御部は、前記回転機構による前記基板の回転時には前記ヘッド部によるＵＶ又はプラズマの放射を停止させるように、前記ヘッド部及び前記回転機構を制御する、めっき装置。     A plating apparatus according to claim 26, wherein
    The edge cleaning apparatus includes a rotation mechanism that rotates the substrate, and a control unit that controls the head unit, the rotation mechanism, and the actuator.
    The said control part is a plating apparatus which controls the said head part and the said rotation mechanism so that the radiation | emission of UV or plasma by the said head part may be stopped at the time of the rotation of the said board | substrate by the said rotation mechanism.
  29. 　請求項１１に記載されためっき方法において、
    　前記除去工程は、ＵＶ又はプラズマを放射するヘッド部を矩形の前記基板のエッジ部に沿って移動させながらＵＶ又はプラズマを放射する工程を有する、めっき方法。     In the plating method according to claim 11,
    The said removal process is a plating method which has a process of radiating UV or plasma, moving the head part which radiates | emits UV or plasma along the edge part of the said rectangular said board | substrate.
  30. 　請求項２９に記載されためっき方法において、
    　前記除去工程は、前記ヘッド部を水平方向に移動させて、前記矩形の基板のエッジ部に前記ヘッド部を位置合わせする工程を有する、めっき方法。     The plating method according to claim 29,
    The said removal process is a plating method which has the process of moving the said head part to a horizontal direction, and aligning the said head part with the edge part of the said rectangular board | substrate.
  31. 　請求項２９に記載されためっき方法において、
    　前記除去工程は、前記矩形の基板のエッジ部の一つにＵＶ又はプラズマを放射した後、ＵＶ又はプラズマの放射を停止させながら前記ヘッド部を旋回させる工程を有する、めっき方法。     The plating method according to claim 29,
    The removing step includes a step of rotating the head portion while stopping the emission of UV or plasma after radiating UV or plasma to one of the edge portions of the rectangular substrate.
  32. 　請求項２９に記載されためっき方法において、
    　前記除去工程は、前記矩形の基板のエッジ部の一つにＵＶ又はプラズマを放射した後、ＵＶ又はプラズマの放射を停止させながら前記矩形の基板を回転させる工程を有する、めっき方法。     The plating method according to claim 29,
    The removing step includes a step of rotating the rectangular substrate while stopping the emission of UV or plasma after radiating UV or plasma to one of the edge portions of the rectangular substrate.
PCT/JP2017/008256 2016-03-04 2017-03-02 Plating apparatus and plating method WO2017150657A1 (en)

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