WO2017133106A1 - Flexible substrate structure and method of forming same, and flexible electronic device - Google Patents
Flexible substrate structure and method of forming same, and flexible electronic device Download PDFInfo
- Publication number
- WO2017133106A1 WO2017133106A1 PCT/CN2016/081233 CN2016081233W WO2017133106A1 WO 2017133106 A1 WO2017133106 A1 WO 2017133106A1 CN 2016081233 W CN2016081233 W CN 2016081233W WO 2017133106 A1 WO2017133106 A1 WO 2017133106A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- flexible substrate
- barrier layer
- polymer
- substrate structure
- layer
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 94
- 238000000034 method Methods 0.000 title claims abstract description 27
- 230000004888 barrier function Effects 0.000 claims abstract description 125
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 30
- 239000001301 oxygen Substances 0.000 claims abstract description 30
- 229920000642 polymer Polymers 0.000 claims description 77
- 239000000463 material Substances 0.000 claims description 53
- 239000000178 monomer Substances 0.000 claims description 20
- 239000002105 nanoparticle Substances 0.000 claims description 13
- -1 polyethylene terephthalate Polymers 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
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- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 230000035515 penetration Effects 0.000 claims description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 8
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 8
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 8
- 239000000395 magnesium oxide Substances 0.000 claims description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 7
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 7
- PCLLJCFJFOBGDE-UHFFFAOYSA-N (5-bromo-2-chlorophenyl)methanamine Chemical compound NCC1=CC(Br)=CC=C1Cl PCLLJCFJFOBGDE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229940090961 chromium dioxide Drugs 0.000 claims description 5
- IAQWMWUKBQPOIY-UHFFFAOYSA-N chromium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Cr+4] IAQWMWUKBQPOIY-UHFFFAOYSA-N 0.000 claims description 5
- AYTAKQFHWFYBMA-UHFFFAOYSA-N chromium(IV) oxide Inorganic materials O=[Cr]=O AYTAKQFHWFYBMA-UHFFFAOYSA-N 0.000 claims description 5
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- 238000000576 coating method Methods 0.000 claims description 5
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- 229920005749 polyurethane resin Polymers 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 5
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 239000004698 Polyethylene Substances 0.000 claims description 4
- IAXXETNIOYFMLW-COPLHBTASA-N [(1s,3s,4s)-4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl] 2-methylprop-2-enoate Chemical compound C1C[C@]2(C)[C@@H](OC(=O)C(=C)C)C[C@H]1C2(C)C IAXXETNIOYFMLW-COPLHBTASA-N 0.000 claims description 4
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 4
- 229940119545 isobornyl methacrylate Drugs 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 4
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 4
- 229920000417 polynaphthalene Polymers 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000004132 cross linking Methods 0.000 claims description 3
- 238000013007 heat curing Methods 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
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- 238000006116 polymerization reaction Methods 0.000 claims description 3
- 229920000098 polyolefin Polymers 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims description 2
- 239000004695 Polyether sulfone Substances 0.000 claims description 2
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- 229910052810 boron oxide Inorganic materials 0.000 claims description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 2
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- 238000006243 chemical reaction Methods 0.000 claims description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 2
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- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims 2
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical compound C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 claims 1
- REPVLJRCJUVQFA-UHFFFAOYSA-N (-)-isopinocampheol Natural products C1C(O)C(C)C2C(C)(C)C1C2 REPVLJRCJUVQFA-UHFFFAOYSA-N 0.000 claims 1
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- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 169
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 11
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 7
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- KUDUQBURMYMBIJ-UHFFFAOYSA-N 2-prop-2-enoyloxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC(=O)C=C KUDUQBURMYMBIJ-UHFFFAOYSA-N 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
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- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 2
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- RZVINYQDSSQUKO-UHFFFAOYSA-N 2-phenoxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC1=CC=CC=C1 RZVINYQDSSQUKO-UHFFFAOYSA-N 0.000 description 2
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- YDKNBNOOCSNPNS-UHFFFAOYSA-N methyl 1,3-benzoxazole-2-carboxylate Chemical compound C1=CC=C2OC(C(=O)OC)=NC2=C1 YDKNBNOOCSNPNS-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
Definitions
- the present invention relates to the field of electronic device manufacturing technology, and in particular, to a flexible substrate structure and a method of forming the same, and a flexible electronic device.
- Flexible electronic and flexible display technology is one of the more active research directions in the field of electronic device manufacturing in recent years, and it is also one of the important directions for the development of electronic information industry.
- Flexible electronic products with lightweight, bendable, foldable and even curlable properties have been extensively researched and even manufactured, for example, flexible electronic circuits, flexible electrochromic films, flexible photovoltaic devices, flexible smart labels or identification tags, flexible batteries Flexible smart cards, flexible light-emitting diodes, and organic light-emitting diode display panels.
- the problem solved by the present invention is that the prior art flexible electronic product has a short life and low reliability.
- a flexible substrate structure including: a flexible substrate; a planarization layer on the flexible substrate, the planarization layer being away from the flexible liner The surface on the bottom side is flat; a barrier layer on the planarization layer for blocking the penetration of oxygen and moisture.
- the barrier layer comprises an inorganic barrier layer and a polymer barrier layer.
- the polymeric barrier layer is on the inorganic barrier layer.
- the inorganic barrier layer is on the polymer barrier layer.
- the number of the inorganic barrier layer and the polymer barrier layer is plural, and the plurality of inorganic barrier layers and the plurality of polymer barrier layers are alternately stacked on the planarization layer.
- the material of the planarization layer comprises polymethyl methacrylate, cyclohexane dimethanol diacrylate polymer, cyclic diacrylate polymer, isobornyl methacrylate polymer, three different One or more of a cyanurate polymer, a triacrylate polymer, an epoxy resin polymer, a silicone polymer, and a polyurethane polymer.
- the material of the inorganic barrier layer comprises one of alumina, silica, titania, zirconia, zinc oxide, vanadium dioxide, chromium dioxide, manganese dioxide, silicon nitride, and silicon carbide or A variety.
- the material of the polymer barrier layer comprises one or more of parylene, polyurethane and epoxy resin.
- the material of the flexible substrate comprises ethylene-tetrafluoroethylene copolymer, polyethylene terephthalate, polyethylene, polycarbonate, polyolefin, polypropylene, polyether sulfone, polynaphthalene, polyacyl
- a polyester film such as an imide or a polyester, polymethyl methacrylate, stainless steel, and aluminum.
- nanoparticles for absorbing oxygen and moisture are dispersed in the flexible substrate.
- the material of the nanometer comprises one or more of calcium oxide, cerium oxide, boron oxide, magnesium oxide, aluminum alkyl and aluminum alkoxide.
- an embodiment of the present invention further provides a method for forming a flexible substrate structure, the method comprising: providing a flexible substrate; forming a planarization layer on the flexible substrate, the planarization layer being away from the flexibility a surface on one side of the substrate is flat; on the planarization layer Forming a barrier layer for blocking the penetration of oxygen and moisture.
- the material of the planarization layer comprises polymethyl methacrylate, cyclohexane dimethanol diacrylate polymer, cyclic diacrylate polymer, isobornyl methacrylate polymer, three different One or more of a cyanurate polymer, a triacrylate polymer, an epoxy resin polymer, a silicone polymer, and a polyurethane polymer
- forming the planarization layer includes: on the flexible substrate Coating the planarization layer monomer material; subjecting the planarization layer monomer material to ultraviolet light crosslinking or heat curing treatment to form a polymer planarization layer corresponding to the monomer material.
- forming the barrier layer comprises forming an inorganic barrier layer and forming a polymer barrier layer.
- the material of the inorganic barrier layer comprises one of alumina, silica, titania, zirconia, zinc oxide, vanadium dioxide, chromium dioxide, manganese dioxide, silicon nitride, and silicon carbide or
- a plurality of processes for forming the inorganic barrier layer are atomic layer deposition, physical vapor deposition, or chemical vapor deposition.
- the material of the polymer barrier layer comprises one or more of parylene, polyurethane and epoxy resin
- forming the polymer barrier layer comprises: coating a barrier layer monomer material;
- the barrier layer monomer material produces a thermo- or photopolymerization reaction to form a polymer barrier layer.
- an embodiment of the present invention further provides a flexible electronic device including the above flexible substrate structure and a device layer on the flexible substrate structure.
- the flexible substrate structure of the embodiment of the present invention includes a planarization layer and a barrier layer on the planarization layer, the planarization layer being capable of filling holes and cracks on the surface of the flexible substrate, so that the surface is flat and will not be
- the tip topography of the flexible substrate surface is transferred to a barrier layer formed thereon; the barrier layer structure is dense for blocking oxygen and moisture permeation from the flexible substrate or the outside, thereby protecting subsequent formation thereon Device layer, improve The reliability and longevity of electronic devices.
- the barrier layer of the embodiment of the invention may also be a two-layer structure and a multilayer structure, including an inorganic barrier layer and a polymer barrier layer.
- the inorganic barrier layer is densely structured and is a main barrier layer of oxygen and moisture; the polymer barrier layer can block pinhole defects that may exist in the inorganic barrier layer and further block the penetration of oxygen and moisture.
- the method for forming the flexible substrate structure and the flexible electronic device of the embodiments of the present invention can also block the penetration of moisture and oxygen, and improve the reliability and life of the electronic device.
- FIG. 1 is a schematic view showing the structure of a flexible substrate according to an embodiment of the present invention.
- FIG. 2 is a schematic view showing the structure of a flexible substrate according to another embodiment of the present invention.
- FIG. 3 is a schematic view showing the structure of a flexible substrate according to another embodiment of the present invention.
- FIG. 4 is a schematic view showing the structure of a flexible substrate according to another embodiment of the present invention.
- the flexible substrate is usually made of a polymer material, the surface of which is not flat enough, and bubbles or micropores are present inside; after the device layer is formed on the flexible substrate, the uneven surface of the flexible substrate is easily introduced into the device layer.
- the tip structure causes tip discharge to affect the life of the device; further, bubbles in the flexible substrate release oxygen or moisture, and external oxygen and moisture may also reach the device layer on the flexible substrate through holes in the flexible substrate, oxygen and Water vapor easily causes variations in the material of the device layer, which affects the reliability and longevity of the device. Therefore, if the flexible substrate is modified to have a flat surface and can block the penetration of oxygen and moisture into the device layer, the reliability and life of the electronic product formed thereon can be improved.
- embodiments of the present invention provide a flexible substrate structure that is planarly planar and capable of blocking oxygen and water permeation from a flexible substrate or the outside. Through, thereby protecting the device layer subsequently formed thereon, improving the reliability and life of the electronic device.
- FIG. 1 there is shown a schematic diagram of a flexible substrate structure including a flexible substrate 100, a planarization layer 110 on the flexible substrate 100, and a flat surface, in accordance with an embodiment of the present invention.
- the barrier layer 120 on the layer 110.
- the flexible substrate 100 is a physical support for the film material subsequently formed thereon, and is particularly suitable for low cost roll-to-roll (R2R) manufacturing processes due to its flexible or foldable features.
- the flexible substrate 100 may be made of a polymer material, for example, the material of the flexible substrate 100 includes ethylene-tetrafluoroethylene copolymer (ETFE), polyethylene terephthalate ( PET), polyethylene (PE), polycarbonate, polyolefin, polypropylene, polyethersulfone (PES), polynaphthalene (PEN), polyimide, polyester, and polymethyl methacrylate Or a variety.
- the flexible substrate 100 can also be a metal foil, such as stainless steel or aluminum.
- the flexible substrate 100 may also include both a metal foil and a polymeric material.
- the surface may not be flat enough to have various tip structures. If an electronic device layer is directly formed thereon, the tip affects device performance; in addition, for polymer materials, due to its molecular weight Larger and more complex, it is inevitable to form bubbles or holes in its interior and surface. When the bubbles release oxygen or moisture permeates into the device layer, or external oxygen or moisture permeates through the holes to the device layer, the performance of the device is affected. Therefore, as shown in FIG. 1, the flexible substrate structure of the embodiment of the present invention further forms a planarization layer 110 on the flexible substrate 100 for planarizing the surface of the flexible substrate 100, thereby solving the above problem.
- the planarization layer 110 may fill a hole of the surface of the flexible substrate 100, and the planarization layer 110 is away from the flexible liner
- the surface on the side of the bottom 100, that is, the surface on which the barrier layer 120 is formed, is flat and smooth, and does not transfer the tip structure of the surface of the flexible substrate 100 to the barrier layer or device layer of the upper layer.
- the material of the planarization layer 110 includes polymethyl methacrylate, cyclohexane dimethanol diacrylate polymer, cyclic diacrylate polymer, isobornyl methacrylate polymer.
- the planarization layer 110 of the present invention is not limited to the above materials, and other materials capable of filling the holes of the surface of the flexible substrate 100 and having a flat surface after formation may also be used to form the planarization layer 110.
- the planarization layer can be formed by fluid evaporation, vacuum thermal evaporation, spray coating, or spin coating.
- the method of forming the planarization layer 110 includes: first, applying a planarization layer monomer material to an upper surface of the flexible substrate 100 by vacuum thermal evaporation, due to a single The bulk material has a small molecular weight, can easily fill the pores and cracks on the surface of the flexible substrate 100, and under heating conditions, the fluidity of the monomer material is good, and it is easy to form a smooth surface without defects; The planarization layer monomer material is subjected to ultraviolet light crosslinking or heat curing treatment to form the planarization layer 110 corresponding to the monomer material, so that the planarization layer 110 is also smooth and defect-free.
- a methyl methacrylate monomer material having good fluidity on the surface of the flexible substrate 100 can be easily filled, and pores and cracks on the surface of the flexible substrate 100 can be easily filled.
- the planarization layer 110 of polymethyl methacrylate (organic glass, PMMA) is formed by irradiation of heat or ultraviolet light, thereby repairing defects of the surface of the flexible substrate 100, so that the surface of the planarization layer 110 is smooth and free from defects.
- the planarization layer 110 may also be dispersed with a nanoparticle material capable of absorbing oxygen and moisture, so that the planarization layer 110 not only has a planarization and filling function, but also simultaneously It can absorb oxygen and moisture.
- the material of the nanoparticles is a metal oxide
- the nanoparticles may be calcium oxide (CaO), barium monoxide (BaO), boron oxide (BO), magnesium oxide ( One or more of the MgO) nanoparticles; in some embodiments, the material of the nanoparticles is an organometallic compound, for example, the nano may be an alkyl-aluminum and an alkoxy aluminum ( One or more of alkoxy-aluminum nanoparticles; in other embodiments, the nanoparticles may also include metal oxide nanoparticles and organometallic oxide nanoparticles.
- the planarization layer 110 comprises magnesium oxide (MgO) nanoparticles, and the
- the planarization layer 110 of the embodiment of the present invention further has a barrier layer 120.
- the barrier layer 120 has a dense material structure and stable properties for blocking the penetration of oxygen, moisture, and other harmful gases into the formation layer.
- the device layer on the top is formed by an atomic layer deposition process, such as an atomic layer deposition aluminum oxide film, the coverage of the atomic layer deposition process is good, the thickness can be precisely controlled, and the aluminum oxide
- the material structure is very dense, and neither oxygen nor moisture can pass through easily.
- the organic polymer can also be used to form a barrier layer 120 of a dense polymer material, such as a para-xylene dimolecular polymer, by vacuum thermal evaporation (90-170 ° C), followed by high temperature thermal cracking.
- a dense polymer material such as a para-xylene dimolecular polymer
- poly-p-xylene poly-p-xylene
- the trade name is Parylene, which can be densely covered
- the surface of the planarization layer 110 is a 0.1-100 micrometer parylene film coating deposited at room temperature under vacuum, which has uniform thickness, compact pinhole-free, transparent and stress-free, excellent waterproof and moisture-proof function, and Extremely excellent electrical insulation properties, heat resistance, weather resistance and chemical stability.
- the barrier layer 120 may be a single layer structure or a multilayer structure. In some embodiments, as shown in FIG. 1, the barrier layer 120 is a single layer structure, and the barrier layer may be a polymer barrier layer formed of a structurally dense polymer material or formed of a structurally dense inorganic material. Inorganic barrier layer.
- the barrier layer 120 is a two-layer structure, and the barrier layer 120 includes an inorganic barrier layer 1201 and a polymer barrier layer 1202.
- the inorganic barrier layer 1201 is the main barrier layer of oxygen and moisture, and the polymer barrier layer 1202 can block pinhole defects that may exist in the inorganic barrier layer 1201 and further prevent the penetration of oxygen and moisture.
- the inorganic barrier layer 1201 is located on the planarization layer 110, and the organic barrier layer 1202 is located on the inorganic barrier layer 1201.
- the relative position of the inorganic barrier layer 1201 and the polymer barrier layer 1202 may be changed.
- the polymer barrier layer 1202 may also be located in the planarization layer 110.
- the inorganic barrier layer 1201 is located on the polymer barrier layer 1202.
- the barrier layer 120 may also be a multilayer structure of more than two layers.
- FIG. 4 a schematic structural view of a barrier layer 120 of a multilayer structure including a plurality of inorganic barrier layers 1201 and a plurality of polymer barrier layers 1202 is illustrated.
- the plurality of inorganic barrier layers 1201 and the plurality of polymer barrier layers 1202 are alternately stacked on the planarization layer 110.
- the number of the plurality of inorganic barrier layers 1201 and the plurality of polymeric barrier layers 1202 is determined based on their own material properties and thickness, as well as the barrier performance requirements that need to be achieved.
- FIG. 4 a schematic structural view of a barrier layer 120 of a multilayer structure including a plurality of inorganic barrier layers 1201 and a plurality of polymer barrier layers 1202 is illustrated.
- the plurality of inorganic barrier layers 1201 and the plurality of polymer barrier layers 1202 are alternately stacked on the planarization layer 110.
- the bottommost layer and the topmost layer of the barrier layer 120 are the inorganic barrier layer 1201 and the polymer barrier layer 1202, respectively.
- the bottom layer and the most The top layer may also be the polymer barrier layer 1202 and the inorganic barrier layer 1201, respectively, or both of the inorganic barrier layers 1201, or both of the polymer barrier layers 1202.
- the material of the inorganic barrier layer 1201 includes aluminum oxide, silicon dioxide, titanium dioxide, zirconium oxide, zinc oxide, vanadium dioxide, chromium dioxide, manganese dioxide, silicon nitride, and silicon carbide.
- One or more of the processes of forming the inorganic barrier layer 1201 may be atomic layer deposition, physical vapor deposition, or chemical vapor deposition.
- an aluminum oxide layer is formed as the inorganic barrier layer 1201 by an atomic layer deposition process, the atomic layer deposition process has good coverage, thickness control is precise, and the alumina material structure is dense, oxygen and water. Gas can't pass through.
- the material of the polymer barrier layer 1202 includes parylene (C, N, D, AF-4, One or more of SF, HT), polyurethane and epoxy resin.
- the process of forming the polymer barrier layer 1202 may be fluid evaporation, vacuum thermal evaporation, spray coating or spin coating.
- forming the polymer barrier layer 1202 includes: coating a barrier layer monomer material by a vacuum thermal evaporation process; causing the barrier layer monomer material to thermally or photopolymerize to form Polymer barrier layer.
- the barrier layer monomer material may be p-xylene dimolecular polymer, p-xylene, polyfunctional (meth) acrylate, hexanediol diacrylate, acrylate, phenoxyethyl acrylate, cyanide B Base (mono) acrylate, isobornyl acrylate, isobornyl acrylate, octadecyl methacrylate, isodecyl acrylate, acrylic acid, lauryl ester, ⁇ -carboxyethyl acrylate, tetrahydrofurfuryl acrylate , dinitrile acrylate, pentafluorophenyl acrylate, nitrophenyl acrylate, 2-phenoxyethyl acrylate, 2-phenoxyethyl methacrylate, 2,2,2-methyl Acrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, triethylene glycol dimethacrylate, tripropylene glycol diacrylate
- the polymer barrier layer 1202 of the p-xylene dimer polymer monomer material can be formed by polymerization to form a parylene.
- the specific processes and advantages have been described above, and are not described here. Narration. It should be noted that other monomer materials which can form a structurally dense polymer after polymerization can also be used to form the polymer barrier layer 1202.
- the thickness of each layer of the above materials is relatively thin, and does not greatly affect the bendability or foldability of the flexible substrate 100.
- the specific thickness can be set according to actual application conditions.
- the planarization layer 110 has a thickness of 0.1 to 100 micrometers
- the inorganic barrier layer 1201 has a thickness of 1 to 200 nanometers
- the polymer barrier layer 1202 has a thickness of 0.1 to 100 micrometers. .
- planarization layer 110, the inorganic barrier layer 1201 and the polymer barrier layer 1202 should also be insulating materials and have suitable thermal conductivity to facilitate heat dissipation of the electronic devices thereon.
- an embodiment of the present invention further provides a method for forming the flexible substrate structure described above, the method comprising: providing a flexible substrate; forming a planarization layer on the flexible substrate, the planarization layer being away from the The surface of one side of the flexible substrate is flat; a barrier layer is formed on the planarization layer for blocking the permeation of oxygen and moisture.
- the method for forming the structure of the flexible substrate has been described in the above embodiments. For details, refer to the above embodiments, and details are not described herein.
- an embodiment of the present invention further provides a flexible electronic device including the flexible substrate structure in the above embodiment, and a device layer on the flexible substrate structure.
- the flexible electronic device may be a flexible electronic circuit, a flexible electrochromic film, a flexible photovoltaic device, a smart tag or identification tag, a flexible battery, a smart card, a flexible light emitting diode, an organic light emitting diode display panel, or other sensitive to oxygen and moisture. Electronic devices, etc.
- the flexible electronic device of the embodiment of the present invention by adopting the flexible substrate structure described above, blocks oxygen and moisture from entering the device layer, thereby improving the reliability and life of the flexible electronic device.
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Abstract
Disclosed are a flexible substrate structure and a method of forming the same, and a flexible electronic device. The flexible substrate structure comprises a flexible underlayer (100); a planarization layer (110) located on the flexible underlayer (100), a surface thereof located away from one side of the flexible underlayer (100) being flat; and a barrier layer (120) located on the planarization layer (110), the barrier layer (120) being used to block the permeation of oxygen and water vapor. The flexible substrate structure can effectively block the permeation of oxygen and water vapor, thereby improving the reliability and service life of an electronic device formed thereon.
Description
本申请要求2016年2月6日提交中国专利局,申请号为201610084031.9、名称为“柔性基板结构及其形成方法,柔性电子器件”,以及申请号为201620118799.9、名称为“柔性基板结构及柔性电子器件”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This application claims to be submitted to the Chinese Patent Office on February 6, 2016, the application number is 201610084031.9, the name is "flexible substrate structure and its forming method, flexible electronic device", and the application number is 201620118799.9, the name is "flexible substrate structure and flexible electronic The priority of the Chinese Patent Application, the entire disclosure of which is incorporated herein by reference.
本发明涉及电子器件制造技术领域,尤其涉及一种柔性基板结构及其形成方法,和一种柔性电子器件。The present invention relates to the field of electronic device manufacturing technology, and in particular, to a flexible substrate structure and a method of forming the same, and a flexible electronic device.
柔性电子和柔性显示技术是近年来电子器件制造领域较为活跃的研究方向之一,同时也是电子信息产业发展的重要方向之一。具有轻质、可弯曲、可折叠甚至可卷曲特性的柔性电子产品已经被广泛研究甚至生产制造,例如,柔性电子电路、柔性电致变色薄膜、柔性光伏器件、柔性智能标签或识别标签、柔性电池、柔性智能卡、柔性发光二极管以及有机发光二极管显示面板等。Flexible electronic and flexible display technology is one of the more active research directions in the field of electronic device manufacturing in recent years, and it is also one of the important directions for the development of electronic information industry. Flexible electronic products with lightweight, bendable, foldable and even curlable properties have been extensively researched and even manufactured, for example, flexible electronic circuits, flexible electrochromic films, flexible photovoltaic devices, flexible smart labels or identification tags, flexible batteries Flexible smart cards, flexible light-emitting diodes, and organic light-emitting diode display panels.
但是,现有技术的柔性电子产品的寿命较短、可靠性较低。However, prior art flexible electronic products have a short life and low reliability.
发明内容Summary of the invention
本发明解决的问题是现有技术的柔性电子产品的寿命较短、可靠性较低。The problem solved by the present invention is that the prior art flexible electronic product has a short life and low reliability.
为解决上述问题,本发明实施例提供了一种柔性基板结构,所述柔性基板结构包括:柔性衬底;位于所述柔性衬底上的平坦化层,所述平坦化层远离所述柔性衬底一侧的表面平坦;位于所述平坦化层上的阻挡层,所述阻挡层用于阻挡氧气和水气的渗透。
In order to solve the above problems, embodiments of the present invention provide a flexible substrate structure including: a flexible substrate; a planarization layer on the flexible substrate, the planarization layer being away from the flexible liner The surface on the bottom side is flat; a barrier layer on the planarization layer for blocking the penetration of oxygen and moisture.
可选地,所述阻挡层包括无机阻挡层和聚合物阻挡层。Optionally, the barrier layer comprises an inorganic barrier layer and a polymer barrier layer.
可选地,所述聚合物阻挡层位于所述无机阻挡层上。Optionally, the polymeric barrier layer is on the inorganic barrier layer.
可选地,所述无机阻挡层位于所述聚合物阻挡层上。Optionally, the inorganic barrier layer is on the polymer barrier layer.
可选地,所述无机阻挡层和所述聚合物阻挡层的数量为多个,所述多个无机阻挡层和所述多个聚合物阻挡层交替堆叠于所述平坦化层上。Optionally, the number of the inorganic barrier layer and the polymer barrier layer is plural, and the plurality of inorganic barrier layers and the plurality of polymer barrier layers are alternately stacked on the planarization layer.
可选地,所述平坦化层的材料包括聚甲基丙烯酸甲酯、环己烷二甲醇二丙烯酸酯聚合物、环状二丙烯酸酯聚合物、异冰片基甲基丙烯酸酯聚合物、三异氰脲酸酯聚合物、三丙烯酸酯聚合物、环氧树脂聚合物、硅树脂聚合物和聚氨酯聚合物中的一种或多种。Optionally, the material of the planarization layer comprises polymethyl methacrylate, cyclohexane dimethanol diacrylate polymer, cyclic diacrylate polymer, isobornyl methacrylate polymer, three different One or more of a cyanurate polymer, a triacrylate polymer, an epoxy resin polymer, a silicone polymer, and a polyurethane polymer.
可选地,所述无机阻挡层的材料包括氧化铝、二氧化硅、二氧化钛、氧化锆、氧化锌、二氧化钒、二氧化铬、二氧化锰、氮化硅和碳化硅中的一种或多种。Optionally, the material of the inorganic barrier layer comprises one of alumina, silica, titania, zirconia, zinc oxide, vanadium dioxide, chromium dioxide, manganese dioxide, silicon nitride, and silicon carbide or A variety.
可选地,所述聚合物阻挡层的材料包括聚对二甲苯、聚氨酯和环氧树脂中的一种或多种。Optionally, the material of the polymer barrier layer comprises one or more of parylene, polyurethane and epoxy resin.
可选地,所述柔性衬底的材料包括乙烯-四氟乙烯共聚物、聚对苯二甲酸乙酯、聚乙烯、聚碳酸酯、聚烯烃、聚丙烯、聚醚砜、聚萘、聚酰亚胺、聚酯等聚酯薄膜、聚甲基丙烯酸甲酯、不锈钢和铝中的一种或多种。Optionally, the material of the flexible substrate comprises ethylene-tetrafluoroethylene copolymer, polyethylene terephthalate, polyethylene, polycarbonate, polyolefin, polypropylene, polyether sulfone, polynaphthalene, polyacyl One or more of a polyester film such as an imide or a polyester, polymethyl methacrylate, stainless steel, and aluminum.
可选地,所述柔性衬底中分散有用于吸收氧气和水气的纳米颗粒。Optionally, nanoparticles for absorbing oxygen and moisture are dispersed in the flexible substrate.
可选地,所述纳米颗粒的材料包括氧化钙、一氧化钡、氧化硼、氧化镁、烷基铝和烷氧基铝中的一种或多种。Optionally, the material of the nanometer comprises one or more of calcium oxide, cerium oxide, boron oxide, magnesium oxide, aluminum alkyl and aluminum alkoxide.
对应地,本发明实施例还提供了一种柔性基板结构的形成方法,所述方法包括:提供柔性衬底;在所述柔性衬底上形成平坦化层,所述平坦化层远离所述柔性衬底一侧的表面平坦;在所述平坦化层上形
成阻挡层,所述阻挡层用于阻挡氧气和水气的渗透。Correspondingly, an embodiment of the present invention further provides a method for forming a flexible substrate structure, the method comprising: providing a flexible substrate; forming a planarization layer on the flexible substrate, the planarization layer being away from the flexibility a surface on one side of the substrate is flat; on the planarization layer
Forming a barrier layer for blocking the penetration of oxygen and moisture.
可选地,所述平坦化层的材料包括聚甲基丙烯酸甲酯、环己烷二甲醇二丙烯酸酯聚合物、环状二丙烯酸酯聚合物、异冰片基甲基丙烯酸酯聚合物、三异氰脲酸酯聚合物、三丙烯酸酯聚合物、环氧树脂聚合物、硅树脂聚合物和聚氨酯聚合物中的一种或多种,形成所述平坦化层包括:在所述柔性衬底上涂布平坦化层单体材料;对所述平坦化层单体材料进行紫外光交联或者热固化处理,形成与所述单体材料对应的聚合物平坦化层。Optionally, the material of the planarization layer comprises polymethyl methacrylate, cyclohexane dimethanol diacrylate polymer, cyclic diacrylate polymer, isobornyl methacrylate polymer, three different One or more of a cyanurate polymer, a triacrylate polymer, an epoxy resin polymer, a silicone polymer, and a polyurethane polymer, forming the planarization layer includes: on the flexible substrate Coating the planarization layer monomer material; subjecting the planarization layer monomer material to ultraviolet light crosslinking or heat curing treatment to form a polymer planarization layer corresponding to the monomer material.
可选地,形成所述阻挡层包括形成无机阻挡层和形成聚合物阻挡层。Optionally, forming the barrier layer comprises forming an inorganic barrier layer and forming a polymer barrier layer.
可选地,所述无机阻挡层的材料包括氧化铝、二氧化硅、二氧化钛、氧化锆、氧化锌、二氧化钒、二氧化铬、二氧化锰、氮化硅和碳化硅中的一种或多种,形成所述无机阻挡层的工艺为原子层沉积、物理气相沉积或者化学气相沉积。Optionally, the material of the inorganic barrier layer comprises one of alumina, silica, titania, zirconia, zinc oxide, vanadium dioxide, chromium dioxide, manganese dioxide, silicon nitride, and silicon carbide or A plurality of processes for forming the inorganic barrier layer are atomic layer deposition, physical vapor deposition, or chemical vapor deposition.
可选地,所述聚合物阻挡层的材料包括聚对二甲苯、聚氨酯和环氧树脂中的一种或多种,形成所述聚合物阻挡层包括:涂布阻挡层单体材料;使所述阻挡层单体材料产生热致或光致聚合反应,形成聚合物阻挡层。Optionally, the material of the polymer barrier layer comprises one or more of parylene, polyurethane and epoxy resin, and forming the polymer barrier layer comprises: coating a barrier layer monomer material; The barrier layer monomer material produces a thermo- or photopolymerization reaction to form a polymer barrier layer.
进一步地,本发明实施例还提供了一种柔性电子器件,所述柔性电子器件包括上述的柔性基板结构,以及位于所述柔性基板结构上的器件层。Further, an embodiment of the present invention further provides a flexible electronic device including the above flexible substrate structure and a device layer on the flexible substrate structure.
与现有技术相比,本发明实施例的技术方案具有以下优点:Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:
本发明实施例的柔性基板结构包括了平坦化层和位于所述平坦化层上的阻挡层,所述平坦化层能够填充所述柔性衬底表面的孔洞及裂痕,从而表面平整,不会将柔性衬底表面的尖端形貌传递至形成于其上的阻挡层;所述阻挡层结构致密,用于阻挡来自于柔性衬底或者外界的氧气和水气渗透,从而保护了后续形成于其上的器件层,提高
了电子器件的可靠性和寿命。The flexible substrate structure of the embodiment of the present invention includes a planarization layer and a barrier layer on the planarization layer, the planarization layer being capable of filling holes and cracks on the surface of the flexible substrate, so that the surface is flat and will not be The tip topography of the flexible substrate surface is transferred to a barrier layer formed thereon; the barrier layer structure is dense for blocking oxygen and moisture permeation from the flexible substrate or the outside, thereby protecting subsequent formation thereon Device layer, improve
The reliability and longevity of electronic devices.
进一步地,本发明实施例的阻挡层还可以为双层结构和多层结构,包括无机阻挡层和聚合物阻挡层。所述无机阻挡层结构致密,为氧气和水气的主要阻挡层;所述聚合物阻挡层可以堵住所述无机阻挡层中可能存在的针孔缺陷,并进一步阻挡氧气和水气的渗透。Further, the barrier layer of the embodiment of the invention may also be a two-layer structure and a multilayer structure, including an inorganic barrier layer and a polymer barrier layer. The inorganic barrier layer is densely structured and is a main barrier layer of oxygen and moisture; the polymer barrier layer can block pinhole defects that may exist in the inorganic barrier layer and further block the penetration of oxygen and moisture.
对应地,本发明实施例的柔性基板结构的形成方法和柔性电子器件也可以阻挡水气和氧气的渗透,提高电子器件的可靠性和寿命。Correspondingly, the method for forming the flexible substrate structure and the flexible electronic device of the embodiments of the present invention can also block the penetration of moisture and oxygen, and improve the reliability and life of the electronic device.
图1示出了本发明一实施例的柔性基板结构的示意图;1 is a schematic view showing the structure of a flexible substrate according to an embodiment of the present invention;
图2示出了本发明另一实施例的柔性基板结构的示意图;2 is a schematic view showing the structure of a flexible substrate according to another embodiment of the present invention;
图3示出了本发明另一实施例的柔性基板结构的示意图;3 is a schematic view showing the structure of a flexible substrate according to another embodiment of the present invention;
图4示出了本发明另一实施例的柔性基板结构的示意图。4 is a schematic view showing the structure of a flexible substrate according to another embodiment of the present invention.
在柔性电子产品中,柔性基板作为柔性电子产品的物理支撑和保护组件,对柔性电子产品的寿命和可靠性都有重要影响。但是柔性基板通常由聚合物材料制成,其表面不够平整,且内部存在气泡或者微孔洞;后续在所述柔性基板上形成器件层后,柔性基板的不平整表面容易在器件层引入各种尖端结构,造成尖端放电,影响器件寿命;进一步地,柔性基板内的气泡会释放氧气或者水气,外界的氧气和水气也可能通过柔性基板内的孔洞到达柔性基板上的器件层,氧气和水气容易造成器件层材料的变异,从而影响器件的可靠性和寿命。因此,如果对柔性基板进行改进,使其表面平整,且能够阻挡氧气和水气的渗透进入器件层,则可以提高形成于其上的电子产品的可靠性和寿命。In flexible electronic products, flexible substrates, as physical support and protection components for flexible electronic products, have an important impact on the life and reliability of flexible electronic products. However, the flexible substrate is usually made of a polymer material, the surface of which is not flat enough, and bubbles or micropores are present inside; after the device layer is formed on the flexible substrate, the uneven surface of the flexible substrate is easily introduced into the device layer. The tip structure causes tip discharge to affect the life of the device; further, bubbles in the flexible substrate release oxygen or moisture, and external oxygen and moisture may also reach the device layer on the flexible substrate through holes in the flexible substrate, oxygen and Water vapor easily causes variations in the material of the device layer, which affects the reliability and longevity of the device. Therefore, if the flexible substrate is modified to have a flat surface and can block the penetration of oxygen and moisture into the device layer, the reliability and life of the electronic product formed thereon can be improved.
为此,本发明实施例提供了一种柔性基板结构,所述柔性基板结构平面平坦化,且能够阻挡来自于柔性衬底或者外界的氧气和水气渗
透,从而保护了后续形成于其上的器件层,提高了电子器件的可靠性和寿命。To this end, embodiments of the present invention provide a flexible substrate structure that is planarly planar and capable of blocking oxygen and water permeation from a flexible substrate or the outside.
Through, thereby protecting the device layer subsequently formed thereon, improving the reliability and life of the electronic device.
为使本发明的上述目的、特征和优点能够更为明显易懂,下面结合附图对本发明的具体实施例做详细的说明。The above described objects, features, and advantages of the present invention will be more apparent from the aspects of the invention.
需要说明的是,提供这些附图的目的是有助于理解本发明的实施例,而不应解释为对本发明的不当的限制。为了更清楚起见,图中所示尺寸并未按比例绘制,可能会做放大、缩小或其他改变。It is to be understood that the appended drawings are intended to be illustrative of the embodiments of the invention and are not to be construed as limiting. For the sake of clarity, the dimensions shown in the figures are not drawn to scale and may be enlarged, reduced, or otherwise changed.
参考图1,图1示出了本发明一实施例的柔性基板结构的示意图,所述柔性基板结构包括柔性衬底100、位于所述柔性衬底100上的平坦化层110和位于所述平坦化层110上的阻挡层120。Referring to FIG. 1, there is shown a schematic diagram of a flexible substrate structure including a flexible substrate 100, a planarization layer 110 on the flexible substrate 100, and a flat surface, in accordance with an embodiment of the present invention. The barrier layer 120 on the layer 110.
所述柔性衬底100为后续形成于其上的薄膜材料的物理支撑,由于其具有可弯曲或者可折叠的特征,特别适用于低成本的卷对卷(R2R)制造工艺。在一些实施例中,所述柔性衬底100可以由聚合物材料制成,例如,所述柔性衬底100的材料包括乙烯-四氟乙烯共聚物(ETFE)、聚对苯二甲酸乙酯(PET)、聚乙烯(PE)、聚碳酸酯、聚烯烃、聚丙烯、聚醚砜(PES)、聚萘(PEN)、聚酰亚胺、聚酯和聚甲基丙烯酸甲酯中的一种或多种。在一些实施例中,所述柔性衬底100还可以为金属箔,例如,不锈钢或者铝。当然,在另外一些实施例中,所述柔性衬底100还可以同时包括金属箔和聚合物材料。The flexible substrate 100 is a physical support for the film material subsequently formed thereon, and is particularly suitable for low cost roll-to-roll (R2R) manufacturing processes due to its flexible or foldable features. In some embodiments, the flexible substrate 100 may be made of a polymer material, for example, the material of the flexible substrate 100 includes ethylene-tetrafluoroethylene copolymer (ETFE), polyethylene terephthalate ( PET), polyethylene (PE), polycarbonate, polyolefin, polypropylene, polyethersulfone (PES), polynaphthalene (PEN), polyimide, polyester, and polymethyl methacrylate Or a variety. In some embodiments, the flexible substrate 100 can also be a metal foil, such as stainless steel or aluminum. Of course, in other embodiments, the flexible substrate 100 may also include both a metal foil and a polymeric material.
无论是聚合物材料还是金属箔,其表面可能都不够平整,具有各种尖端结构,如果在其上直接形成电子器件层,该尖端就会影响器件性能;另外,对于聚合物材料,由于其分子量较大,结构复杂,难免在其内部和表面形成气泡或者孔洞。当所述气泡释放出氧气或者水气渗透至器件层,或者外界的氧气或水气通过所述孔洞渗透至器件层,都会影响器件的性能。因此,如图1所示,本发明实施例的柔性基板结构在柔性衬底100上还形成了平坦化层110用于使所述柔性衬底100的表面平坦化,从而解决上述问题,所述平坦化层110可以填充所述柔性衬底100表面的孔洞,且所述平坦化层110远离所述柔性衬
底100一侧的表面,也就是在其上形成有阻挡层120的表面平坦光滑,不会将柔性衬底100表面的尖端结构传递到上层的阻挡层或器件层。Whether it is a polymer material or a metal foil, the surface may not be flat enough to have various tip structures. If an electronic device layer is directly formed thereon, the tip affects device performance; in addition, for polymer materials, due to its molecular weight Larger and more complex, it is inevitable to form bubbles or holes in its interior and surface. When the bubbles release oxygen or moisture permeates into the device layer, or external oxygen or moisture permeates through the holes to the device layer, the performance of the device is affected. Therefore, as shown in FIG. 1, the flexible substrate structure of the embodiment of the present invention further forms a planarization layer 110 on the flexible substrate 100 for planarizing the surface of the flexible substrate 100, thereby solving the above problem. The planarization layer 110 may fill a hole of the surface of the flexible substrate 100, and the planarization layer 110 is away from the flexible liner
The surface on the side of the bottom 100, that is, the surface on which the barrier layer 120 is formed, is flat and smooth, and does not transfer the tip structure of the surface of the flexible substrate 100 to the barrier layer or device layer of the upper layer.
在一些实施例中,所述平坦化层110的材料包括聚甲基丙烯酸甲酯、环己烷二甲醇二丙烯酸酯聚合物、环状二丙烯酸酯聚合物、异冰片基甲基丙烯酸酯聚合物、三(2-羟基乙基)异氰脲酸酯聚合物、三丙烯酸酯聚合物、环氧树脂聚合物、硅树脂聚合物和聚氨酯聚合物中的一种或多种。但本发明的平坦化层110并不限于上述材料,能够填充所述柔性衬底100表面的孔洞且成形后表面平坦的其他材料也可用于形成所述平坦化层110。In some embodiments, the material of the planarization layer 110 includes polymethyl methacrylate, cyclohexane dimethanol diacrylate polymer, cyclic diacrylate polymer, isobornyl methacrylate polymer. One or more of a tris(2-hydroxyethyl)isocyanurate polymer, a triacrylate polymer, an epoxy resin polymer, a silicone polymer, and a polyurethane polymer. However, the planarization layer 110 of the present invention is not limited to the above materials, and other materials capable of filling the holes of the surface of the flexible substrate 100 and having a flat surface after formation may also be used to form the planarization layer 110.
在一些实施例中,可以采用流体蒸镀、真空热蒸发、喷涂或者旋涂的方法形成所述平坦化层。具体地,在一实施例中,形成所述平坦化层110的方法包括:首先,采用真空热蒸发的方式将平坦化层单体材料涂布至所述柔性衬底100的上表面,由于单体材料的分子量较小,可以很容易地填充所述柔性衬底100表面的孔洞及裂痕,且在加热条件下,单体材料的流动性好,容易形成无缺陷的光滑表面;接着,对所述平坦化层单体材料进行紫外光交联或者热固化处理,形成与所述单体材料对应的所述平坦化层110,从而所述平坦化层110也表面光滑无缺陷。具体地,在一实施例中,采用甲基丙烯酸甲酯单体材料,它在所述柔性衬底100表面具有较好的流动性,可以很容易地填充柔性衬底100表面的孔洞及裂痕,通过加热或紫外光的照射形成聚甲基丙烯酸甲酯(有机玻璃,PMMA)的平坦化层110,从而修补了柔性衬底100表面的缺陷,使得平坦化层110表面光滑无缺陷。In some embodiments, the planarization layer can be formed by fluid evaporation, vacuum thermal evaporation, spray coating, or spin coating. Specifically, in an embodiment, the method of forming the planarization layer 110 includes: first, applying a planarization layer monomer material to an upper surface of the flexible substrate 100 by vacuum thermal evaporation, due to a single The bulk material has a small molecular weight, can easily fill the pores and cracks on the surface of the flexible substrate 100, and under heating conditions, the fluidity of the monomer material is good, and it is easy to form a smooth surface without defects; The planarization layer monomer material is subjected to ultraviolet light crosslinking or heat curing treatment to form the planarization layer 110 corresponding to the monomer material, so that the planarization layer 110 is also smooth and defect-free. Specifically, in one embodiment, a methyl methacrylate monomer material having good fluidity on the surface of the flexible substrate 100 can be easily filled, and pores and cracks on the surface of the flexible substrate 100 can be easily filled. The planarization layer 110 of polymethyl methacrylate (organic glass, PMMA) is formed by irradiation of heat or ultraviolet light, thereby repairing defects of the surface of the flexible substrate 100, so that the surface of the planarization layer 110 is smooth and free from defects.
在一些实施例中,所述平坦化层110里还可以分散有纳米颗粒材料,所述纳米颗粒材料能够吸收氧气和水气,使得所述平坦化层110不仅具有平坦化和填充功能,还同时能够吸收氧气和水气。具体地,在一些实施例中,所述纳米颗粒的材料为金属氧化物,例如,所述纳米颗粒可以为氧化钙(CaO)、一氧化钡(BaO)、氧化硼(BO)、氧化镁(MgO)纳米颗粒中的一种或多种;在一些实施例中,所述纳米
颗粒的材料为有机金属化合物,例如,所述纳米可以为烷基铝(alkyl-aluminum)和烷氧基铝(alkoxy-aluminum)纳米颗粒中的一种或多种;在另一些实施例中,所述纳米颗粒还可以同时包括金属氧化物纳米颗粒和有机金属氧化物纳米颗粒。具体地,在一实施例中,所述平坦化层110里包含氧化镁(MgO)纳米颗粒,氧化镁吸收水后可以形成固态物质Mg(OH)2,可以起到阻碍水穿透平坦化层110的作用。In some embodiments, the planarization layer 110 may also be dispersed with a nanoparticle material capable of absorbing oxygen and moisture, so that the planarization layer 110 not only has a planarization and filling function, but also simultaneously It can absorb oxygen and moisture. Specifically, in some embodiments, the material of the nanoparticles is a metal oxide, for example, the nanoparticles may be calcium oxide (CaO), barium monoxide (BaO), boron oxide (BO), magnesium oxide ( One or more of the MgO) nanoparticles; in some embodiments, the material of the nanoparticles is an organometallic compound, for example, the nano may be an alkyl-aluminum and an alkoxy aluminum ( One or more of alkoxy-aluminum nanoparticles; in other embodiments, the nanoparticles may also include metal oxide nanoparticles and organometallic oxide nanoparticles. Specifically, in an embodiment, the planarization layer 110 comprises magnesium oxide (MgO) nanoparticles, and the magnesium oxide can form a solid substance Mg(OH) 2 after absorbing water, which can block the water penetration flattening layer. The role of 110.
继续参考图1,本发明实施例的平坦化层110上还具有阻挡层120,所述阻挡层120的材料结构致密、性质稳定,用于阻挡氧气、水气以及其他有害气体渗透至形成于其上的器件层。具体地,在一些实施例中,采用原子层沉积工艺形成致密的无机材料的阻挡层120,比如采用原子层沉积氧化铝薄膜,原子层沉积工艺的覆盖性能好,厚度可以精确控制,而氧化铝材料结构是非常致密的,氧气和水气都不能轻易穿过。在另外一实施例中,也可以采用有机聚合物形成致密的聚合物材料的阻挡层120,比如采用对二甲苯二分子聚合物,通过真空热蒸发(90~170℃)、再经过高温热裂解(600~720℃)形成对二甲苯单体结构、最终在低温平坦化层110表面聚合成聚对二甲苯(Poly-p-xylene),商品名为帕里纶(Parylene),它可以致密覆盖平坦化层110表面,这种真空状态下室温沉积制备的0.1-100微米聚对二甲苯薄膜涂层,其厚度均匀、致密无针孔、透明无应力、有优异的防水防潮功能,它还有极其优良的电绝缘性能、耐热性、耐候性和化学稳定性。With reference to FIG. 1, the planarization layer 110 of the embodiment of the present invention further has a barrier layer 120. The barrier layer 120 has a dense material structure and stable properties for blocking the penetration of oxygen, moisture, and other harmful gases into the formation layer. The device layer on the top. Specifically, in some embodiments, the barrier layer 120 of the dense inorganic material is formed by an atomic layer deposition process, such as an atomic layer deposition aluminum oxide film, the coverage of the atomic layer deposition process is good, the thickness can be precisely controlled, and the aluminum oxide The material structure is very dense, and neither oxygen nor moisture can pass through easily. In another embodiment, the organic polymer can also be used to form a barrier layer 120 of a dense polymer material, such as a para-xylene dimolecular polymer, by vacuum thermal evaporation (90-170 ° C), followed by high temperature thermal cracking. (600 ~ 720 ° C) to form a p-xylene monomer structure, and finally polymerized on the surface of the low temperature planarization layer 110 into poly-p-xylene (Poly-p-xylene), the trade name is Parylene, which can be densely covered The surface of the planarization layer 110 is a 0.1-100 micrometer parylene film coating deposited at room temperature under vacuum, which has uniform thickness, compact pinhole-free, transparent and stress-free, excellent waterproof and moisture-proof function, and Extremely excellent electrical insulation properties, heat resistance, weather resistance and chemical stability.
所述阻挡层120可以为单层结构或者多层结构。在一些实施例中,如图1所示,所述阻挡层120为单层结构,所述阻挡层可以为结构致密的聚合物材料形成的聚合物阻挡层,或者为结构致密的无机材料形成的无机阻挡层。The barrier layer 120 may be a single layer structure or a multilayer structure. In some embodiments, as shown in FIG. 1, the barrier layer 120 is a single layer structure, and the barrier layer may be a polymer barrier layer formed of a structurally dense polymer material or formed of a structurally dense inorganic material. Inorganic barrier layer.
在一些实施例中,如图2和图3所示,所述阻挡层120为双层结构,所述阻挡层120包括无机阻挡层1201和聚合物阻挡层1202,所
述无机阻挡层1201为氧气和水气的主要阻挡层,所述聚合物阻挡层1202可以堵住所述无机阻挡层1201中可能存在的针孔缺陷,并进一步阻止氧气和水气的渗透。在一些实施例中,如图2所示,所述无机阻挡层1201位于所述平坦化层110上,所述有机阻挡层1202位于所述无机阻挡层1201上。在另一些实施例中,所述无机阻挡层1201与所述聚合物阻挡层1202的相对位置可以改变,如图3所示,也可以为所述聚合物阻挡层1202位于所述平坦化层110上,所述无机阻挡层1201位于所述聚合物阻挡层1202上。In some embodiments, as shown in FIGS. 2 and 3, the barrier layer 120 is a two-layer structure, and the barrier layer 120 includes an inorganic barrier layer 1201 and a polymer barrier layer 1202.
The inorganic barrier layer 1201 is the main barrier layer of oxygen and moisture, and the polymer barrier layer 1202 can block pinhole defects that may exist in the inorganic barrier layer 1201 and further prevent the penetration of oxygen and moisture. In some embodiments, as shown in FIG. 2, the inorganic barrier layer 1201 is located on the planarization layer 110, and the organic barrier layer 1202 is located on the inorganic barrier layer 1201. In other embodiments, the relative position of the inorganic barrier layer 1201 and the polymer barrier layer 1202 may be changed. As shown in FIG. 3, the polymer barrier layer 1202 may also be located in the planarization layer 110. The inorganic barrier layer 1201 is located on the polymer barrier layer 1202.
在另一些实施例中,为了更进一步提高阻挡层120对氧气和水气的阻挡效果,所述阻挡层120还可以为多于两层的多层结构。参考图4,其示出了一种多层结构的阻挡层120的结构示意图,所述阻挡层120包括了多个无机阻挡层1201和多个聚合物阻挡层1202。所述多个无机阻挡层1201和所述多个聚合物阻挡层1202交替堆叠于所述平坦化层110上。所述多个无机阻挡层1201和多个聚合物阻挡层1202的数量基于其自身材料特性和厚度、以及需要达到的阻挡性能要求所确定。在图4中,所述阻挡层120的最底层和最顶层分别为所述无机阻挡层1201和所述聚合物阻挡层1202,在其他一些实施例中,所述阻挡层120的最底层和最顶层也可以分别为所述聚合物阻挡层1202和所述无机阻挡层1201,或者均为所述无机阻挡层1201,或者均为所述聚合物阻挡层1202。In other embodiments, in order to further improve the barrier effect of the barrier layer 120 on oxygen and moisture, the barrier layer 120 may also be a multilayer structure of more than two layers. Referring to FIG. 4, a schematic structural view of a barrier layer 120 of a multilayer structure including a plurality of inorganic barrier layers 1201 and a plurality of polymer barrier layers 1202 is illustrated. The plurality of inorganic barrier layers 1201 and the plurality of polymer barrier layers 1202 are alternately stacked on the planarization layer 110. The number of the plurality of inorganic barrier layers 1201 and the plurality of polymeric barrier layers 1202 is determined based on their own material properties and thickness, as well as the barrier performance requirements that need to be achieved. In FIG. 4, the bottommost layer and the topmost layer of the barrier layer 120 are the inorganic barrier layer 1201 and the polymer barrier layer 1202, respectively. In other embodiments, the bottom layer and the most The top layer may also be the polymer barrier layer 1202 and the inorganic barrier layer 1201, respectively, or both of the inorganic barrier layers 1201, or both of the polymer barrier layers 1202.
上述各实施例中,所述无机阻挡层1201的材料包括氧化铝、二氧化硅、二氧化钛、氧化锆、氧化锌、二氧化钒、二氧化铬、二氧化锰、氮化硅和碳化硅中的一种或多种,形成所述无机阻挡层1201的工艺可以为原子层沉积、物理气相沉积或者化学气相沉积。例如,在一具体的实施例中,采用原子层沉积工艺形成氧化铝层作为所述无机阻挡层1201,原子层沉积工艺的覆盖性能好,厚度控制精确,而氧化铝材料结构致密,氧气和水气都不能穿过。In the above embodiments, the material of the inorganic barrier layer 1201 includes aluminum oxide, silicon dioxide, titanium dioxide, zirconium oxide, zinc oxide, vanadium dioxide, chromium dioxide, manganese dioxide, silicon nitride, and silicon carbide. One or more of the processes of forming the inorganic barrier layer 1201 may be atomic layer deposition, physical vapor deposition, or chemical vapor deposition. For example, in a specific embodiment, an aluminum oxide layer is formed as the inorganic barrier layer 1201 by an atomic layer deposition process, the atomic layer deposition process has good coverage, thickness control is precise, and the alumina material structure is dense, oxygen and water. Gas can't pass through.
所述聚合物阻挡层1202的材料包括聚对二甲苯(C,N,D,AF-4,
SF,HT)、聚氨酯和环氧树脂中的一种或多种。形成所述聚合物阻挡层1202的工艺可以为流体蒸镀、真空热蒸发、喷涂或者旋涂。例如,在一实施例中,形成所述聚合物阻挡层1202包括:采用真空热蒸发的工艺涂布阻挡层单体材料;使所述阻挡层单体材料产生热致或光致聚合反应,形成聚合物阻挡层。其中所述阻挡层单体材料可以为对二甲苯二分子聚合物、对二甲苯、多官能(甲基)丙烯酸酯、己二醇二丙烯酸酯、丙烯酸酯、丙烯酸苯氧基乙酯、氰乙基(单)丙烯酸酯、丙烯酸异冰片酯、丙烯酸异冰片酯、甲基丙烯酸十八烷基酯、丙烯酸异癸酯、丙烯酸、月桂酯、丙烯酸β-羧乙基酯、丙烯酸四氢糠基酯、二腈丙烯酸酯、五氟苯基丙烯酸酯、硝基苯基丙烯酸酯、2-苯氧基乙基丙烯酸酯、2-苯氧基乙基甲基丙烯酸酯、2,2,2-甲基丙烯酸酯、二乙二醇二丙烯酸酯、三甘醇二丙烯酸酯、三甘醇二甲基丙烯酸酯、三丙二醇二丙烯酸酯、乙二醇二丙烯酸酯、新戊乙二醇二丙烯酸酯、丙氧基化新戊二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、乙二醇二丙烯酸酯、双酚A环氧二丙烯酸酯、1,6-己二醇二甲基丙烯酸酯、三羟甲基丙烷三丙烯酸酯、乙氧基化三羟甲基丙烷三丙烯酸酯、丙基化三羟甲基丙烷三丙烯酸酯、三(2-羟乙基)异氰脲酸酯三丙烯酸酯酯、季戊四醇三丙烯酸酯、丙烯酸酯,丙烯酸酯、环状二丙烯酸酯、环氧丙烯酸酯、乙烯基醚、乙烯基萘和丙烯腈中的一种或多种。在一具体实施例中,可以采用对二甲苯二分子聚合物单体材料经过聚合反应后形成聚对二甲苯的聚合物阻挡层1202,具体工艺及优点在上文中已有描述,此处不再赘述。需要说明的是,其他经过聚合反应后可以形成结构致密的聚合物的单体材料也可以用来形成所述聚合物阻挡层1202。The material of the polymer barrier layer 1202 includes parylene (C, N, D, AF-4,
One or more of SF, HT), polyurethane and epoxy resin. The process of forming the polymer barrier layer 1202 may be fluid evaporation, vacuum thermal evaporation, spray coating or spin coating. For example, in an embodiment, forming the polymer barrier layer 1202 includes: coating a barrier layer monomer material by a vacuum thermal evaporation process; causing the barrier layer monomer material to thermally or photopolymerize to form Polymer barrier layer. Wherein the barrier layer monomer material may be p-xylene dimolecular polymer, p-xylene, polyfunctional (meth) acrylate, hexanediol diacrylate, acrylate, phenoxyethyl acrylate, cyanide B Base (mono) acrylate, isobornyl acrylate, isobornyl acrylate, octadecyl methacrylate, isodecyl acrylate, acrylic acid, lauryl ester, β-carboxyethyl acrylate, tetrahydrofurfuryl acrylate , dinitrile acrylate, pentafluorophenyl acrylate, nitrophenyl acrylate, 2-phenoxyethyl acrylate, 2-phenoxyethyl methacrylate, 2,2,2-methyl Acrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, triethylene glycol dimethacrylate, tripropylene glycol diacrylate, ethylene glycol diacrylate, neopentyl glycol diacrylate, C Oxylated neopentyl glycol diacrylate, polyethylene glycol diacrylate, ethylene glycol diacrylate, bisphenol A epoxy diacrylate, 1,6-hexanediol dimethacrylate, trihydroxyl Methyl propane triacrylate, ethoxylated trimethylolpropane triacrylate , propylated trimethylolpropane triacrylate, tris(2-hydroxyethyl)isocyanurate triacrylate, pentaerythritol triacrylate, acrylate, acrylate, cyclic diacrylate, epoxy One or more of acrylate, vinyl ether, vinyl naphthalene, and acrylonitrile. In a specific embodiment, the polymer barrier layer 1202 of the p-xylene dimer polymer monomer material can be formed by polymerization to form a parylene. The specific processes and advantages have been described above, and are not described here. Narration. It should be noted that other monomer materials which can form a structurally dense polymer after polymerization can also be used to form the polymer barrier layer 1202.
需要说明的是,上述各层材料的厚度较薄,不对所述柔性衬底100的可弯曲或可折叠性能造成较大影响,具体厚度可以根据实际应用条件进行设定。例如,在一些实施例中,所述平坦化层110的厚度为0.1至100微米,所述无机阻挡层1201的厚度为1至200纳米,所述聚合物阻挡层1202的厚度为0.1至100微米。另外,还需要说明的是,由于所述柔性基板结构后续用于在其上形成电子器件,因此,
所述平坦化层110、所述无机阻挡层1201和所述聚合物阻挡层1202还应当为绝缘材料,并具有适当的热导率以利于其上电子器件的散热。It should be noted that the thickness of each layer of the above materials is relatively thin, and does not greatly affect the bendability or foldability of the flexible substrate 100. The specific thickness can be set according to actual application conditions. For example, in some embodiments, the planarization layer 110 has a thickness of 0.1 to 100 micrometers, the inorganic barrier layer 1201 has a thickness of 1 to 200 nanometers, and the polymer barrier layer 1202 has a thickness of 0.1 to 100 micrometers. . In addition, it should also be noted that since the flexible substrate structure is subsequently used to form an electronic device thereon,
The planarization layer 110, the inorganic barrier layer 1201 and the polymer barrier layer 1202 should also be insulating materials and have suitable thermal conductivity to facilitate heat dissipation of the electronic devices thereon.
对应地,本发明实施例还提供了一种形成上述柔性基板结构的方法,所述方法包括:提供柔性衬底;在所述柔性衬底上形成平坦化层,所述平坦化层远离所述柔性衬底一侧的表面平坦;在所述平坦化层上形成阻挡层,所述阻挡层用于阻挡氧气和水气的渗透。关于所述柔性基板结构的形成方法在上述实施例里中已经进行了描述,具体可参考上述的实施例,在此不再赘述。Correspondingly, an embodiment of the present invention further provides a method for forming the flexible substrate structure described above, the method comprising: providing a flexible substrate; forming a planarization layer on the flexible substrate, the planarization layer being away from the The surface of one side of the flexible substrate is flat; a barrier layer is formed on the planarization layer for blocking the permeation of oxygen and moisture. The method for forming the structure of the flexible substrate has been described in the above embodiments. For details, refer to the above embodiments, and details are not described herein.
进一步地,本发明实施例还提供了一种柔性电子器件,所述柔性电子器件包括上述实施例中的柔性基板结构,以及位于所述柔性基板结构上的器件层。所述柔性电子器件可以为柔性电子电路、柔性电致变色薄膜、柔性光伏器件、智能标签或识别标签、柔性电池、智能卡、柔性发光二极管、有机发光二极管显示面板、或者其他对氧气和水气敏感的电子器件等。本发明实施例的柔性电子器件由于采用上述的柔性基板结构,阻挡了氧气和水气进入所述器件层,提高了所述柔性电子器件的可靠性和寿命。Further, an embodiment of the present invention further provides a flexible electronic device including the flexible substrate structure in the above embodiment, and a device layer on the flexible substrate structure. The flexible electronic device may be a flexible electronic circuit, a flexible electrochromic film, a flexible photovoltaic device, a smart tag or identification tag, a flexible battery, a smart card, a flexible light emitting diode, an organic light emitting diode display panel, or other sensitive to oxygen and moisture. Electronic devices, etc. The flexible electronic device of the embodiment of the present invention, by adopting the flexible substrate structure described above, blocks oxygen and moisture from entering the device layer, thereby improving the reliability and life of the flexible electronic device.
虽然本发明披露如上,但本发明并非限定于此。任何本领域技术人员,在不脱离本发明的精神和范围内,均可作各种更动与修改,因此本发明的保护范围应当以权利要求所限定的范围为准。
Although the present invention has been disclosed above, the present invention is not limited thereto. Any changes and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be determined by the scope defined by the appended claims.
Claims (17)
- 一种柔性基板结构,其特征在于,包括:A flexible substrate structure, comprising:柔性衬底;Flexible substrate位于所述柔性衬底上的平坦化层,所述平坦化层远离所述柔性衬底一侧的表面平坦;a planarization layer on the flexible substrate, the surface of the planarization layer being away from a side of the flexible substrate being flat;位于所述平坦化层上的阻挡层,所述阻挡层用于阻挡氧气和水气的渗透。a barrier layer on the planarization layer for blocking the penetration of oxygen and moisture.
- 如权利要求1所述的柔性基板结构,其特征在于,所述阻挡层包括无机阻挡层和聚合物阻挡层。The flexible substrate structure of claim 1 wherein said barrier layer comprises an inorganic barrier layer and a polymeric barrier layer.
- 如权利要求2所述的柔性基板结构,其特征在于,所述聚合物阻挡层位于所述无机阻挡层上。The flexible substrate structure of claim 2 wherein said polymeric barrier layer is on said inorganic barrier layer.
- 如权利要求2所述的柔性基板结构,其特征在于,所述无机阻挡层位于所述聚合物阻挡层上。The flexible substrate structure of claim 2 wherein said inorganic barrier layer is on said polymeric barrier layer.
- 如权利要求2所述的柔性基板结构,其特征在于,所述无机阻挡层和所述聚合物阻挡层的数量为多个,所述多个无机阻挡层和所述多个聚合物阻挡层交替堆叠于所述平坦化层上。The flexible substrate structure according to claim 2, wherein the number of the inorganic barrier layer and the polymer barrier layer is plural, and the plurality of inorganic barrier layers and the plurality of polymer barrier layers are alternately Stacked on the planarization layer.
- 如权利要求1所述的柔性基板结构,其特征在于,所述平坦化层的材料包括聚甲基丙烯酸甲酯、环己烷二甲醇二丙烯酸酯聚合物、环状二丙烯酸酯聚合物、异冰片基甲基丙烯酸酯聚合物、三异氰脲酸酯聚合物、三丙烯酸酯聚合物、环氧树脂聚合物、硅树脂聚合物和聚氨酯聚合物中的一种或多种。The flexible substrate structure according to claim 1, wherein the material of the planarization layer comprises polymethyl methacrylate, cyclohexane dimethanol diacrylate polymer, cyclic diacrylate polymer, and different One or more of borneol-based methacrylate polymer, triisocyanurate polymer, triacrylate polymer, epoxy resin polymer, silicone polymer, and polyurethane polymer.
- 如权利要求1所述的柔性基板结构,其特征在于,所述无机阻挡层的材料包括氧化铝、二氧化硅、二氧化钛、氧化锆、氧化锌、二氧化钒、二氧化铬、二氧化锰、氮化硅和碳化硅中的一种或多种。The flexible substrate structure according to claim 1, wherein the material of the inorganic barrier layer comprises alumina, silica, titania, zirconia, zinc oxide, vanadium dioxide, chromium dioxide, manganese dioxide, One or more of silicon nitride and silicon carbide.
- 如权利要求1所述的柔性基板结构,其特征在于,所述聚合物阻挡层的材料包括聚对二甲苯、聚氨酯和环氧树脂中的一种或多 种。The flexible substrate structure according to claim 1, wherein the material of the polymer barrier layer comprises one or more of parylene, polyurethane, and epoxy resin. Kind.
- 如权利要求1所述的柔性基板结构,其特征在于,所述柔性衬底的材料包括乙烯-四氟乙烯共聚物、聚对苯二甲酸乙酯、聚乙烯、聚碳酸酯、聚烯烃、聚丙烯、聚醚砜、聚萘、聚酰亚胺、聚酯等聚酯薄膜、聚甲基丙烯酸甲酯、不锈钢和铝中的一种或多种。The flexible substrate structure according to claim 1, wherein the material of the flexible substrate comprises ethylene-tetrafluoroethylene copolymer, polyethylene terephthalate, polyethylene, polycarbonate, polyolefin, poly One or more of a polyester film of propylene, polyether sulfone, polynaphthalene, polyimide, polyester, etc., polymethyl methacrylate, stainless steel, and aluminum.
- 如权利要求1所述的柔性基板结构,其特征在于,所述柔性衬底中分散有用于吸收氧气和水气的纳米颗粒。The flexible substrate structure according to claim 1, wherein nanoparticles for absorbing oxygen and moisture are dispersed in said flexible substrate.
- 如权利要求10所述的柔性基板结构,其特征在于,所述纳米颗粒的材料包括氧化钙、一氧化钡、氧化硼、氧化镁、烷基铝和烷氧基铝中的一种或多种。The flexible substrate structure according to claim 10, wherein the material of the nanoparticle comprises one or more of calcium oxide, cerium oxide, boron oxide, magnesium oxide, aluminum alkyl and aluminum alkoxide. .
- 一种柔性基板结构的形成方法,其特征在于,包括:A method for forming a flexible substrate structure, comprising:提供柔性衬底;Providing a flexible substrate;在所述柔性衬底上形成平坦化层,所述平坦化层远离所述柔性衬底一侧的表面平坦;Forming a planarization layer on the flexible substrate, the surface of the planarization layer being away from a side of the flexible substrate being flat;在所述平坦化层上形成阻挡层,所述阻挡层用于阻挡氧气和水气的渗透。A barrier layer is formed on the planarization layer for blocking the permeation of oxygen and moisture.
- 如权利要求12所述的柔性基板结构的形成方法,其特征在于,所述平坦化层的材料包括聚甲基丙烯酸甲酯、环己烷二甲醇二丙烯酸酯聚合物、环状二丙烯酸酯聚合物、异冰片基甲基丙烯酸酯聚合物、三异氰脲酸酯聚合物、三丙烯酸酯聚合物、环氧树脂聚合物、硅树脂聚合物和聚氨酯聚合物中的一种或多种,形成所述平坦化层包括:The method of forming a flexible substrate structure according to claim 12, wherein the material of the planarization layer comprises polymethyl methacrylate, cyclohexane dimethanol diacrylate polymer, and cyclic diacrylate polymerization. Forming one or more of an isobornyl methacrylate polymer, a triisocyanurate polymer, a triacrylate polymer, an epoxy resin polymer, a silicone polymer, and a polyurethane polymer The planarization layer includes:在所述柔性衬底上涂布平坦化层单体材料;Coating a planarization layer monomer material on the flexible substrate;对所述平坦化层单体材料进行紫外光交联或者热固化处理,形成与所述单体材料对应的聚合物平坦化层。The planarization layer monomer material is subjected to ultraviolet light crosslinking or heat curing treatment to form a polymer planarization layer corresponding to the monomer material.
- 如权利要求12所述的柔性基板结构的形成方法,其特征在 于,形成所述阻挡层包括形成无机阻挡层和形成聚合物阻挡层。A method of forming a flexible substrate structure according to claim 12, characterized by Forming the barrier layer includes forming an inorganic barrier layer and forming a polymer barrier layer.
- 如权利要求14所述的柔性基板结构的形成方法,其特征在于,所述无机阻挡层的材料包括氧化铝、二氧化硅、二氧化钛、氧化锆、氧化锌、二氧化钒、二氧化铬、二氧化锰、氮化硅和碳化硅中的一种或多种,形成所述无机阻挡层的工艺为原子层沉积、物理气相沉积或者化学气相沉积。The method of forming a flexible substrate structure according to claim 14, wherein the material of the inorganic barrier layer comprises alumina, silica, titania, zirconia, zinc oxide, vanadium dioxide, chromium dioxide, and the like. One or more of manganese oxide, silicon nitride, and silicon carbide, and the process of forming the inorganic barrier layer is atomic layer deposition, physical vapor deposition, or chemical vapor deposition.
- 如权利要求14所述的柔性基板结构的形成方法,其特征在于,所述聚合物阻挡层的材料包括聚对二甲苯、聚氨酯和环氧树脂中的一种或多种,形成所述聚合物阻挡层包括:The method of forming a flexible substrate structure according to claim 14, wherein the material of the polymer barrier layer comprises one or more of parylene, polyurethane and epoxy resin to form the polymer. The barrier layer includes:涂布阻挡层单体材料;Coating the barrier layer monomer material;使所述阻挡层单体材料产生热致或光致聚合反应,形成聚合物阻挡层。The barrier layer monomer material is subjected to a thermo- or photopolymerization reaction to form a polymer barrier layer.
- 一种柔性电子器件,其特征在于,包括:A flexible electronic device, comprising:如权利要求1-11中任一项所述的柔性基板结构;A flexible substrate structure according to any one of claims 1-11;位于所述柔性基板结构上的器件层。 A device layer on the flexible substrate structure.
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