WO2017126007A1 - 活性ガス生成装置及び成膜処理装置 - Google Patents
活性ガス生成装置及び成膜処理装置 Download PDFInfo
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- WO2017126007A1 WO2017126007A1 PCT/JP2016/051279 JP2016051279W WO2017126007A1 WO 2017126007 A1 WO2017126007 A1 WO 2017126007A1 JP 2016051279 W JP2016051279 W JP 2016051279W WO 2017126007 A1 WO2017126007 A1 WO 2017126007A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32348—Dielectric barrier discharge
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2418—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the electrodes being embedded in the dielectric
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2240/00—Testing
- H05H2240/10—Testing at atmospheric pressure
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2245/00—Applications of plasma devices
- H05H2245/40—Surface treatments
Definitions
- the present invention relates to an active gas generating apparatus in which a high voltage dielectric electrode and a grounded dielectric electrode are installed in parallel, a high voltage is applied between both electrodes, and an active gas is obtained with energy generated by discharge.
- a metal electrode such as an Au film is formed on a dielectric electrode such as ceramic to form an electrode component.
- the dielectric electrode is the main in the electrode component, and the metal electrode formed there is a subordinate.
- a disk-shaped electrode component is used, and the raw material gas that has entered from the outer periphery into the inside passes through the discharge space (discharge field) and is one in the center of the electrode.
- discharge field discharge field
- the gas is ejected outward from the gas ejection holes provided only for the above.
- Patent Document 1 A conventional active gas generation apparatus including the apparatus configured as described above is disclosed in, for example, Patent Document 1, Patent Document 2, Patent Document 3, and Patent Document 4.
- the active gas generating device disclosed in Patent Document 1 is a cylindrical electrode, and an electrode is formed inside and outside the cylinder, and a discharge is generated between the electrodes, and an active gas (radical-containing gas) is introduced by introducing a raw material gas therebetween. Is generated.
- the active gas is blown out as a plasma jet by narrowing the flow path at a blow-off port provided at the tip of the cylinder, and processes an object to be processed that is installed immediately below.
- a pair of counter electrodes are provided in a flat plate shape, and the gas is supplied into the electrodes from the upper side to the lower side by installing them in a vertical shape, and installed immediately below.
- the processed object is processed.
- the flat electrode structure makes it relatively easy to increase the size, and enables uniform film formation over a large area.
- There is also a device using a device structure in which a plurality of pairs of counter electrodes are arranged in a stacked manner instead of a pair Patent Document 6).
- a pair of opposed disk-shaped electrodes are provided, of which a large number of pores are formed in a shower plate shape on the ground-side electrode, and a discharge part is provided in the processing chamber. It has a directly connected structure. Uniform large-area nitriding is possible by enlarging the electrodes, or installing a plurality of electrodes themselves and providing countless pores.
- the discharge space (discharge field) itself is near atmospheric pressure, while the processing chamber is placed under a reduced pressure via the pores. As a result, the active gas generated in the discharge field is transported to the reduced pressure via the pores immediately after generation, so that the attenuation is minimized, so that it can reach the workpiece in a higher density state. It becomes.
- a pair of flat rectangular electrodes are provided, and gas is ejected in one direction in which the gap is closed by spacers on three sides and opened. It features a structure.
- a gas ejection hole is provided at the tip of the opening to spray an active gas (radical) onto the object to be processed.
- Japanese Patent No. 3057065 JP 2003-129246 A Japanese Patent No. 5328685 Japanese Patent No. 5158084 Japanese Patent Laid-Open No. 11-335868 Japanese Patent No. 2537304
- the opening area of the outlet is a few millimeters in diameter, so that the processing area is very limited.
- Patent Document 1 As an active gas generating device disclosed in Patent Document 1, an embodiment in which an electrode is installed in a horizontal direction and a plurality of outlets are provided along the electrode is also presented. With this method, a large processing area can be taken. However, the shape and structure of cylinders and electrodes are complicated. Considering semiconductor film deposition processing applications that do not allow air contamination, it is necessary to provide sufficient sealing characteristics at each component connection part. In addition, since the vicinity of the discharge space (discharge field) is at a high temperature, it is necessary to separate the sealing material from the high temperature part to some extent in order to have a margin even if it is cooled, resulting in a considerably large device size. It is expected to be.
- Patent Document 2 all of the active gas generation methods disclosed in Patent Document 2, Patent Document 5 and Patent Document 6 are basically handled in a discharge space (discharge field) and an object to be processed under the same pressure near the atmospheric pressure. Yes. Since the active gas has a high energy state, it reacts with others or is easily deactivated by light emission or the like. The higher the pressure, the greater the frequency of collisions. For the reasons of the discharge method in the discharge field, the generated active gas is quickly transferred to a reduced pressure even if a certain pressure state cannot be avoided. It is desirable that From such a viewpoint, in the method disclosed in Patent Document 2 and the like, it is imagined that the equivalent radical density has already attenuated when the workpiece is reached.
- the gas ejection holes function as orifices.
- the parts forming the discharge field electrode and the orifice forming the gas ejection hole are separate, a positioning mechanism for both is required, and a sealing mechanism is also provided to prevent any gaps other than the gas ejection hole. It is necessary to provide it, and it is expected that it will become very complicated when the above configuration is examined.
- the conventional active gas generation apparatus disclosed in Patent Document 1, Patent Document 2, and Patent Document 4 can perform film formation when there is one gas ejection hole or when the gas ejection hole is in a line shape. Areas were relatively limited. In particular, it was impossible to uniformly process a 300 mm diameter wafer. On the other hand, there is a means of attaching a shower plate for gas diffusion after the gas ejection hole as in the active gas generator disclosed in Patent Document 3, but since the active gas is very high in the first place, the shower plate There was a serious problem that many of the radicals were deactivated by the gas traveling while colliding with the wall of the plate, so that it was not practical.
- an object of the present invention is to solve the above problems and to provide an active gas generating device capable of generating a high-density active gas.
- the active gas generation device includes a first electrode component, a second electrode component provided below the first electrode component, and the first and second electrodes.
- An AC power supply unit that applies an AC voltage to the component unit, and a discharge space is formed between the first and second electrode component units by the application of the AC voltage by the AC power source unit and is supplied to the discharge space.
- a first metal electrode selectively formed, and the second electrode component is a second dielectric electrode and a second dielectric electrode selectively formed on a lower surface of the second dielectric electrode.
- Two metal electrodes, and the first and second dielectric electrodes are formed by applying the AC voltage.
- a region where the first and second metal electrodes overlap in plan view is defined as the discharge space in the facing dielectric space, and the second metal electrode is seen in plan view as the second dielectric electrode.
- a pair of first partial metal electrodes having a region overlapping with the pair of second partial metal electrodes in a plan view, wherein the second direction intersecting with each other is a direction facing each other.
- the second dielectric electrode is formed in the central region and has a gas ejection hole for ejecting the active gas to the outside, and a central region step portion formed to protrude upward in the central region
- the central region step portion is a plan view. Wherein without overlapping the gas ejection hole, is characterized by forming a width of the second direction is formed to be shorter gets closer to the gas ejection holes in plan view.
- the active gas generation apparatus includes a first electrode component, a second electrode component provided below the first electrode component, and the first and second electrodes.
- An AC power supply unit that applies an AC voltage to the component unit, and a discharge space is formed between the first and second electrode component units by the application of the AC voltage by the AC power source unit and is supplied to the discharge space.
- a first metal electrode selectively formed, and the second electrode component is a second dielectric electrode and a second dielectric electrode selectively formed on a lower surface of the second dielectric electrode.
- Two metal electrodes, and the first and second dielectric electrodes are formed by applying the AC voltage.
- a region where the first and second metal electrodes overlap in plan view is defined as the discharge space in the facing dielectric space, and the first metal electrode is seen in plan view as the first dielectric electrode.
- the first dielectric electrode has a gas ejection hole; A central region stepped portion that protrudes downward in the central region, the central region stepped portion overlaps with all of the plurality of gas ejection holes in plan view, and in the dielectric space, below the central region stepped portion.
- the space is formed so as to be narrower than other spaces.
- the active gas generation apparatus is obtained by supplying a source gas from the outside along the second direction toward the central region of the dielectric space, thereby passing the discharge space.
- the generated active gas can be generated and ejected from the gas ejection hole to the outside.
- the active region is formed on the central region in the dielectric space due to the presence of the step portion in the central region of the first dielectric electrode formed so that the formation width in the second direction becomes shorter as the gas ejection hole is approached. Since the gas flow path of the gas can be narrowed, the gas flow rate can be increased, and as a result, a high-density active gas can be generated.
- the active gas generation apparatus provides an active gas obtained by passing a discharge gas through a discharge space by supplying a raw material gas along a second direction toward the lower central region of the dielectric space. Gas can be generated and ejected from the gas ejection hole to the outside.
- the presence of the central region step portion provided in the first dielectric electrode can narrow the gas flow path of the active gas corresponding to the plurality of gas ejection holes under the central region in the dielectric space. As a result of increasing the gas flow rate, a high-density active gas can be generated.
- the strength of the first and second dielectric electrodes can be improved by dividing the central region stepped portion and the plurality of gas ejection holes between the first and second dielectric electrodes. .
- FIG. 3 is a perspective view showing an overall structure of a dielectric electrode of a ground side electrode constituent part in the active gas generation apparatus of the first embodiment.
- FIG. 3 is an explanatory diagram showing an upper surface and a lower surface structure of the ground side electrode constituting unit according to the first embodiment. It is explanatory drawing which expands and shows the attention area
- region of FIG. FIG. 3 is an enlarged top view showing a region of interest in FIG. 2. It is explanatory drawing which shows the upper surface and lower surface structure of a high voltage side electrode structure part. It is a perspective view (the 1) which shows the assembly process of a high voltage side electrode structure part and a ground side electrode structure part.
- FIG. 6 is a perspective view showing a structure of a dielectric electrode of a ground side electrode constituent part in an active gas generation apparatus according to a second embodiment.
- FIG. 6 is a perspective view showing a configuration of an active gas generation electrode group 303 in the active gas generation apparatus of Embodiment 3. It is sectional drawing which shows the cross-section of the active gas generation electrode group of FIG. It is explanatory drawing which shows typically the basic composition in the active gas production
- FIG. 12 is an explanatory view schematically showing the basic configuration of the active gas generator of the present invention.
- a high-voltage side electrode component 1 first electrode component
- a ground-side electrode component 2 second electrode component
- a high frequency power source 5 AC power source unit
- the high-voltage side electrode component 1 includes a dielectric electrode 11 (first dielectric electrode) and a metal electrode 10 (first metal electrode) that is selectively formed on the upper surface of the dielectric electrode 11.
- the ground-side electrode component 2 includes a dielectric electrode 21 (second dielectric electrode) and a metal electrode 20 (second metal electrode) that is selectively formed on the lower surface of the dielectric electrode 21. ing.
- the metal electrode 20 of the ground side electrode constituting unit 2 is connected to the ground level, and an AC voltage is applied from the high frequency power source 5 to the metal electrode 10 of the high voltage side electrode constituting unit 1.
- a region where the metal electrodes 10 and 20 overlap in plan view is defined as a discharge space in the dielectric space where the dielectric electrodes 11 and 21 face each other.
- the above-described high voltage side electrode configuration unit 1, ground side electrode configuration unit 2 and high frequency power source 5 constitute an active gas generating electrode group.
- a discharge space is formed between the high-voltage side electrode component 1 and the ground-side electrode component 2 by application of an alternating voltage from the high-frequency power source 5, and a source gas such as nitrogen molecules is formed in this discharge space.
- a source gas such as nitrogen molecules is formed in this discharge space.
- an active gas 7 such as a radicalized nitrogen atom can be obtained.
- FIG. 13 is an explanatory diagram showing a specific configuration example of the high-voltage side electrode configuration unit 1.
- a planarly-viewed annular metal electrode 10X is selectively formed on the upper surface of the circular dielectric electrode 11X. Consists of.
- a metal electrode 20X having a circular shape in plan view is selectively formed on the lower surface (upside down in FIG. It is comprised by being formed.
- the ground-side electrode constituting unit 2X is formed in the same configuration as the high-voltage side electrode constituting unit 1X except that the vertical relationship between the metal electrode 20X and the dielectric electrode 21X is different from that of the metal electrode 10X and the dielectric electrode 11X. .
- the difference is that a gas ejection hole 25 (not shown in FIG. 13) is provided at the center of the dielectric electrode 21X.
- FIG. 14 is an explanatory view schematically showing a basic configuration of an active gas generation device realized by the high-voltage side electrode configuration unit 1X and the ground side electrode configuration unit 2X shown in FIG.
- a high-voltage side electrode component 1X (first electrode component) and a ground-side electrode component 2X (second electrode component) provided below the high-voltage electrode component 1
- a high frequency power source 5 (AC power source unit) that applies an AC voltage to the high voltage side electrode configuration unit 1X and the ground side electrode configuration unit 2X as a basic configuration.
- the region where the metal electrodes 10X and 20X overlap in plan view is defined as the discharge space (discharge field).
- the above-described high voltage side electrode configuration unit 1X, ground side electrode configuration unit 2X, and high frequency power source 5 constitute an active gas generation electrode group.
- a discharge space is formed between the high-voltage side electrode component 1 ⁇ / b> X and the ground-side electrode component 2 ⁇ / b> X by application of an AC voltage from the high-frequency power source 5, and the raw material along the gas flow 8 is formed in this discharge space.
- the active gas 7 such as radicalized nitrogen atoms can be obtained and ejected from the gas ejection hole 25 provided at the center of the dielectric electrode 21X to the outside below.
- FIG. 15 is an explanatory view schematically showing a configuration of a film forming apparatus using the above-described active gas generating apparatus as a constituent element.
- a film forming chamber 33 is disposed via an orifice forming unit 32 below an active gas generating device 31 in which the active gas generating electrode group shown in FIGS.
- a wafer 34 having a diameter of 300 mm is disposed in the film forming process chamber 33.
- the inside of the film forming chamber 33 is set to a reduced pressure of about several hundred Pa, while the active gas generator 31 is maintained at a high pressure of about 10 kPa to about atmospheric pressure due to the characteristics of the discharge method.
- the gas ejection holes 25 provided in the dielectric electrode 21X can be accommodated in a size that functions as an orifice, such as the central hole 32C of the orifice forming portion 32.
- the film forming process chamber 33 is provided immediately below the active gas generating device 31 having the active gas generating electrode group shown in FIGS. 12 to 14 therein, and the gas ejection holes 25 of the dielectric electrode 21X are formed as orifice forming portions 32.
- the central hole 32C By functioning as the central hole 32C, it is possible to realize a film formation processing apparatus in which the orifice forming portion 32 is not required and the film formation processing chamber 33 is disposed immediately below the active gas generation apparatus 31.
- active gas generation is achieved by improving the structure of the high-voltage side electrode configuration unit 1 (1X) and the ground side electrode configuration unit 2 (2A) shown in FIGS. It is invention of the active gas production
- FIG. 1 is a perspective view showing an overall structure of a dielectric electrode 211 of the ground-side electrode constituting section 2A in the active gas generation apparatus of the first embodiment.
- FIG. 2 is an explanatory view showing an upper surface and a lower surface structure of the ground side electrode constituting portion 2A.
- (A) is a top view
- (b) is a cross-sectional view taken along the line AA in (a)
- (c) is a bottom view
- (d) is a diagram (a).
- FIG. 3A and 3B are explanatory views showing the attention area R11 in FIG. 2A in an enlarged manner, in which FIG. 3A is a top view and FIG. 3B is an AA cross-sectional view in the attention area R11.
- an XYZ coordinate system is shown as appropriate.
- the ground-side electrode constituting portion 2A (second electrode constituting portion) of the first embodiment includes a dielectric electrode 211 and metal electrodes 201H and 201L (a pair of second partial metal electrodes; second Metal electrode).
- the dielectric electrode 211 has a rectangular plate structure in which the X direction is the longitudinal direction and the Y direction is the short direction.
- the central portion is referred to as a main region 53 and both end portions are referred to as end regions 54A and 54B, with a linear step shape portion 52A and 52B described later as a boundary.
- a plurality (five) of gas ejection holes 55 are provided along the X direction (first direction) in the central region R50 in the main region 53.
- Each of the plurality of gas ejection holes 55 is provided so as to penetrate from the upper surface to the lower surface of the dielectric electrode 211.
- the metal electrodes 201H and 201L are formed on the lower surface of the dielectric electrode 211. They are arranged opposite to each other across the central region R50.
- the metal electrodes 201H and 201L have a substantially rectangular shape in plan view, the X direction (first direction) is the longitudinal direction (electrode formation direction), and the Y direction (second direction) intersecting at right angles to the X direction is The directions are opposite to each other.
- the metal electrodes 201H and 201L have the same size in plan view, and the arrangement thereof is symmetric with respect to the central region R50.
- the metal electrodes 201H and 201L are formed by metallization processing on the lower surface of the dielectric electrode 211. As a result, the dielectric electrode 211 and the metal electrodes 201H and 201L are integrally formed to form the ground-side electrode component 2A. (2nd electrode structure part) is comprised.
- a process using a printing and firing method, a sputtering process, a vapor deposition process, or the like can be considered.
- FIG. 5 is an explanatory diagram showing an upper surface and a lower surface structure of the high-voltage side electrode component 1A (first electrode component).
- FIG. 2A is a top view
- FIG. 2B is a cross-sectional view taken along the line CC of FIG. 1A
- FIG. 1C is a bottom view.
- an XYZ coordinate system is shown as appropriate.
- the dielectric electrode 111 has a rectangular flat plate structure in which the X direction is the longitudinal direction and the Y direction is the short direction.
- the metal electrodes 101H and 101L are formed on the upper surface of the dielectric electrode 111 and correspond to the central region R50 of the dielectric electrode 211 in plan view. They are arranged opposite to each other across the central region R60 having the same shape.
- the metal electrodes 101H and 101L similarly to the metal electrodes 201H and 201L, the metal electrodes 101H and 101L have a substantially rectangular shape in plan view, and the X direction (first direction) is the longitudinal direction (electrode formation direction), and is perpendicular to the X direction.
- the Y direction (second direction) intersecting with each other is a direction facing each other.
- the metal electrodes 101H and 101L have the same size in plan view, and the arrangement thereof is symmetric about the central region R60. However, the widths of the metal electrodes 101H and 101L in the short side direction (Y direction) and the long side direction (X direction) are set slightly shorter than those of the metal electrodes 201H and 201L. Note that the metal electrodes 101H and 101L can also be formed on the upper surface of the dielectric electrode 111 by metallization as in the case of the metal electrodes 201H and 201L.
- FIGS. 6 to 8 are perspective views showing an assembly process of the high voltage side electrode constituting portion 1A and the ground side electrode constituting portion 2A. Each of FIGS. 6 to 8 shows an XYZ coordinate system.
- the active gas generating electrode group 301 can be assembled by disposing the high voltage side electrode configuration portion 1A on the ground side electrode configuration portion 2A. As shown in FIGS. 6 and 7, the central region R60 of the dielectric electrode 111 in the high-voltage side electrode constituting portion 1A and the central region R50 of the dielectric electrode 211 in the ground-side electrode constituting portion 2A overlap in plan view.
- the active gas generating electrode group 301 can finally be completed as shown in FIG. 8 by stacking and combining the high voltage side electrode constituting portion 1A on the ground side electrode constituting portion 2A.
- a region where the metal electrodes 101H and 101L and the metal electrodes 201H and 201L overlap in plan view in a dielectric space where the dielectric electrode 111 and the dielectric electrode 211 constituting the active gas generation electrode group 301 face each other is a discharge space.
- the metal electrodes 101H and 101L and the metal electrodes 201H and 201L which are metallization parts, are connected to a (high voltage) high-frequency power source 5 as in the metal electrodes 10 and 20 shown in FIG.
- the metal electrodes 201H and 201L of the ground side electrode constituting section 2A are grounded.
- the AC peak voltage is fixed at 2 to 10 kV from the high frequency power source 5 and the frequency is set at 10 kHz to 100 kHz. Is applied between the metal electrodes 101H and 101L and the metal electrodes 201H and 201L.
- the dielectric electrode 111 of the high-voltage-side electrode constituting portion 1A has a flat shape on both the upper and lower surfaces, unlike the dielectric electrode 211 of the ground-side electrode constituting portion 2A. Therefore, when combining the high-voltage side electrode component 1A and the ground-side electrode component 2A, it is only fixed from the top to the ground-side electrode component 2A side by a tightening force such as a spring or a bolt. Active gas generation with a structure that suppresses the possibility of contamination due to contact between the end surfaces of the dielectric electrode 111 and the dielectric electrode 211 during transportation, etc., by not positioning with the ground side electrode component 2A. An electrode group 301 can be obtained.
- discharge space discharge field
- the space on the central region R50 (R60) from the discharge space to the gas ejection hole 55 becomes a non-discharge space (non-discharge field, dead space), and active gas is generated in this non-discharge space. It will only decrease.
- Active gas is generated in the discharge space, and when it passes through the discharge space, it is rapidly attenuated due to its high energy and disappears in a short time.
- the active gas decay mechanisms in the case of the type that loses energy due to collisions with other molecules in the ground state, it is possible to suppress the extinction rate of the active gas by simply lowering the pressure and lowering the collision frequency Become.
- the active gas generated in the discharge space near the atmospheric pressure is quickly ejected into the film forming process chamber 33 (see FIG. 15) under reduced pressure. It is desirable that the width in the Y direction of the central region R50 (R60) that defines the space be as narrow as possible.
- the active gas generation apparatus projects the wedge-shaped step shape portion 51 (center region step portion) upward in the center region R50 on the upper surface of the dielectric electrode 211 so as to fill the non-discharge space. It is characterized by being integrally formed as a component of the body electrode 211.
- the wedge-shaped stepped portion 51 does not overlap with the plurality of gas ejection holes 55 in plan view, and forms in the Y direction (second direction) as it approaches each of the plurality of gas ejection holes 55 in plan view.
- the width is formed to be short.
- four rhombus single-piece portions 51s (see FIG. 3 (a) ⁇ ⁇ ) that are formed in a rhombus shape in plan view between the five gas ejection holes 55 and separated from each other, and at both ends of the five gas ejection holes 55
- a wedge-shaped stepped portion 51 is formed by an aggregate of two triangular single portions 51t (see FIG. 3 (a)) having a substantially isosceles triangle shape provided on the outside of the gas ejection hole 55 in plan view.
- the source gas is supplied.
- An active gas obtained when the gas passes through the discharge space can be generated and ejected from the plurality of gas ejection holes 55 to the outside along the ⁇ Z direction (the gas ejection direction D2 shown in FIGS. 6 to 8).
- a wedge-shaped stepped shape having four rhombus single parts 51s and two triangular single parts 51t that are discretely formed so that the width in the Y direction becomes shorter as approaching each of the plurality of gas ejection holes 55. Due to the presence of the portion 51 (step region of the central region), the plurality of gas flow paths of the active gas corresponding to the plurality of gas ejection holes 55 are respectively narrowed on the central region R50 (under the central region R60) in the dielectric space. Can do. As a result, the active gas generator of Embodiment 1 can generate a higher density active gas as a result of increasing the gas flow velocity in each gas ejection hole 55.
- the planar shape may be a semicircular shape, and a plurality of gas ejections in plan view without overlapping with the plurality of gas ejection holes 55 in plan view. It goes without saying that the above-described effects can be achieved if the shape is formed so that the formation width in the Y direction (second direction) becomes shorter as approaching each hole 55.
- a gas containing at least one of nitrogen, oxygen, fluorine, and hydrogen can be considered as the source gas. That is, a mode in which oxygen, rare gas, hydrogen, or fluorine gas is supplied as a source gas is conceivable.
- These source gases travel from the outer periphery of the active gas generation electrode group 301 to the inside along the gas supply direction D1, become active gas via the internal discharge space, and the active gas (gas containing radicals) is dielectric.
- the gas is ejected from a plurality of gas ejection holes 55 provided in the body electrode 211 to the film forming chamber 33 (see FIG. 15) along the gas ejection direction D2.
- a film forming process can be performed on the wafer 34, which is a substrate to be processed, by using an active gas having high reactivity.
- a higher-density active gas can be generated from a source gas containing at least one of nitrogen, oxygen, fluorine, and hydrogen.
- the wedge-shaped stepped portion 51 is provided on the upper surface of the dielectric electrode 211 of the ground side electrode constituting portion 2A, not the dielectric electrode 111 of the high voltage side electrode constituting portion 1A. That is, the plurality of gas ejection holes 55 and the wedge-shaped stepped portion 51 are formed on the same dielectric electrode 111. For this reason, as shown in FIGS. 6 to 8, positioning of the plurality of gas ejection holes 55 and the wedge-shaped stepped portion 51 is not required at the time of assembly of the active gas generation electrode group 301, and the apparatus configuration is simplified. Can also be achieved.
- the wedge-shaped step shape portion 51 defines the gap length (distance in the Z direction between the dielectric electrode 11 and the dielectric electrode 21) in the discharge space between the high voltage side electrode configuration portion 1 and the ground side electrode configuration portion 2. It also functions as a spacer.
- the discharge space can be changed depending on the height of the wedge-shaped step shape portion 51 by a simple assembly process of stacking the high voltage side electrode configuration portion 1A on the ground side electrode configuration portion 2A.
- the gap length at can be set.
- the spacers are often formed in the discharge space. In this case, creeping discharge occurs via the spacer side surface, causing discharge loss and contamination.
- the wedge-shaped stepped portion 51 that protrudes from the upper surface of the dielectric electrode 211 is provided in the central region R50 outside the discharge space, which leads to suppression of contamination and the like.
- the dielectric electrode 211 exists on both ends, and is formed in a linear stepped shape portion 52A that protrudes upward in the boundary region between the main region 53 and the end regions 54A and 54B. And 52B (a pair of end region step portions).
- the linear step shape portions 52A and 52B are formed to extend in the Y direction over the entire length in the short direction of the dielectric electrode 211 in plan view, and along with the formation height of the wedge shape step shape portion 51, the linear step shape.
- the gap length in the discharge space is defined by the formation height of the portions 52A and 52B.
- linear step-shaped portions 52A and 52B regulates the inflow of gas from the both ends of the dielectric electrode 211 in the X direction into the discharge space.
- the gas ejection holes 55 in the vicinity of the both ends of the dielectric electrode 211 are activated gas. Therefore, the calculation of the gas flow rate of the active gas from each gas ejection hole 55 becomes complicated and the control becomes difficult.
- the problem is solved by providing the linear stepped shape portions 52A and 52B.
- the gas inflow paths between the high voltage side electrode constituting portion 1A and the ground side electrode constituting portion 2A are only from two surfaces in the Y direction. Therefore, since the gas flow itself is relatively stabilized, the pressure distribution in the discharge space is constant, and a uniform discharge space can be formed.
- the dielectric electrode 211 further includes the linear stepped shape portions 52A and 52B, so that among the plurality of gas ejection holes 55, even in the gas ejection holes 55 that are close to both ends in the X direction, Since there is no phenomenon that the inflow amount of the active gas changes due to the unintentional inflow of gas from both ends, the active gas can be ejected without causing a variation between the plurality of gas ejection holes 55. . As a result, since the pressure distribution is constant and the flow rates of the plurality of gas ejection holes 55 are the same, the generated radical density is relatively the same in the active gas that has passed through the discharge space.
- a non-discharge distance d25 that is a distance in the Y direction from the discharge space (the end on the central region R50 side of the metal electrodes 201H and 201L) to the plurality of gas ejection holes 55 is 10 mm or more. Is set.
- FIG. 4 is an enlarged top view showing the region of interest R12 in FIG. 2 (a).
- an XYZ coordinate system is shown as appropriate.
- the end portions 51H and 51L having the longest formation length in the Y direction of the wedge-shaped step shape portion 51 are the metal electrodes 201H and 201L forming the discharge space. Is extended to a position adjacent to.
- the end portions 51H and 51L of the wedge-shaped stepped portion 51 and the metal electrodes 201H and 201L overlap with each other, abnormal discharge may be induced when the active gas is generated.
- the end portions Cutout portions 61H and 61L having a substantially triangular shape in plan view are provided in regions corresponding to 51H and 51L.
- a distance on a predetermined reference distance for example, 2 to 3 mm is secured between the wedge-shaped stepped portion 51 and the metal electrodes 201H and 201L.
- the metal electrodes 101H and 101L are also provided with notches 71H and 71L at locations corresponding to the end portions 51H and 51L.
- the shortest distance in plan view between the discharge space defined by the overlapping areas in plan view of the metal electrodes 101H and 101L and the metal electrodes 201H and 201L and the wedge-shaped step shape portion 51 is a predetermined reference distance.
- the planar shapes of the metal electrodes 101H and 101L and the metal electrodes 201H and 201L it is possible to make it difficult for abnormal discharge to occur during active gas generation.
- the metal electrodes 101H and 101L by setting the width in the short direction (Y direction) and the long direction (X direction) of the metal electrodes 101H and 101L slightly shorter than the metal electrodes 201H and 201L, the metal electrodes 101H and 101L Part of the planar shape of 101L and the metal electrodes 201H and 201L is different.
- planar shapes of the metal electrodes 101H and 101L and the metal electrodes 201H and 201L may be completely matched.
- the gas contact region that is a region in contact with the active gas is made of quartz, alumina, silicon nitride, or aluminum nitride. It is desirable to form it as a constituent material.
- the active gas is suppressed in a state where the deactivation of the active gas is suppressed between the surface and the gas contact region in contact with the active gas. Can be ejected from the gas ejection holes.
- each of the plurality of gas ejection holes 55 is formed in the same shape (the same circular shape in diameter).
- the active gas generation device of the first embodiment when the above-described modified configuration is adopted, there is an effect that the ejection amount can be set differently between the plurality of gas ejection holes 55.
- An active gas generation electrode group 301 configured by combining the high voltage side electrode configuration unit 1A and the ground side electrode configuration unit 2A is housed in a casing of the active gas generation device.
- the active gas generation apparatus of the first embodiment corresponds to the active gas generation apparatus 31 shown in FIG.
- the film forming apparatus having the active gas generation device 31 of the first embodiment can pass the active gas (radical-containing gas) through the non-active space on the central region R50 in a shorter time, A high-density active gas can be supplied to the film forming chamber 33. As a result, it is possible to reduce the film formation temperature during film formation on the wafer 34 and shorten the processing time.
- the plurality of gas ejection holes 25 formed in the dielectric electrode 211 of the ground side electrode constituting section 2A have an orifice function, and are formed directly below the active gas generating device 31 without providing the orifice forming section 32 separately. It is desirable to arrange the film processing chamber 33 so as to directly receive the active gas ejected from the plurality of gas ejection holes 25.
- the film forming apparatus is disposed below the active gas generating device 31 of the first embodiment and the ground side electrode constituting unit 2A of the active gas generating device 31, and activated on the internal wafer 34 (processing target substrate).
- a film forming process chamber 33 for performing a film forming process using a gas and the film forming process chamber 33 may be configured to directly receive the active gas ejected from the plurality of gas ejection holes 25. desirable.
- the plurality of gas ejection holes 55 formed in the dielectric electrode 211 of the ground side electrode constituting section 2A have an orifice function.
- the raw material gas flow rate 4 slm
- the orifice upstream side (in the active gas generator 31) pressure 30 kPa
- the orifice downstream side (in the film forming chamber 33) pressure 266 Pa
- the gas ejection hole 55 (orifice ) Diameter ⁇ 1.3 mm
- the film forming apparatus in which the environment is set can directly apply the active gas to the wafer 34 in the film forming process chamber 33 provided immediately below, the active gas having a higher density and a higher electric field is applied to the wafer 34. Therefore, it is possible to realize a film formation process with higher quality and easily perform film formation with a high aspect ratio and three-dimensional film formation.
- the pressure of the discharge space in the active gas generator (active gas generator 31) of the first embodiment is set to 10 kPa to atmospheric pressure, and the pressure in the film forming chamber 33 is set to the discharge space. It is desirable to set it below the pressure.
- the film forming apparatus configured as described above has an effect of suppressing the attenuation amount of the density of the active gas by setting the pressure.
- FIG. 9 is a perspective view showing the structure of the dielectric electrode 212 of the ground-side electrode constituent part 2B (second electrode constituent part) in the active gas generator of the second embodiment.
- an XYZ coordinate system is shown as appropriate.
- a basic configuration is adopted in which the diameters of the plurality of gas ejection holes 55 are set to be the same.
- the dielectric electrode 212 (second dielectric electrode) is connected at the upper ends 51H and 51L (see FIG. 4) of the four rhombus single-piece portions 51s of the wedge-shaped step shape portion 51 (center region step portion). It further has four gas flow path partition walls 56H and 56L (a plurality of separation step portions) that are formed so as to protrude to the front.
- the four gas flow path partition walls 56H and 56L extend in the Y direction and are formed over the entire length of the dielectric electrode 212 in the Y direction. Specifically, the four gas flow path partition walls 56H are formed to extend from the end portion 51H of the rhomboid single-piece portion 51s of the wedge-shaped step shape portion 51 to the upper end portion of the dielectric electrode 212 in the + Y direction.
- the partition wall 56L is formed to extend from the end portion 51L of the rhomboid unit 51s of the wedge-shaped stepped portion 51 to the lower end portion of the dielectric electrode 212 in the ⁇ Y direction.
- the gap length in discharge space is prescribed
- the four gas flow path partition walls 56H and 56L are formed so that the dielectric space is separated for every five through holes.
- the configuration other than the dielectric electrode 212 in the ground side electrode configuration unit 2B is the same as the high voltage side electrode configuration unit 1A (dielectric electrode 111, metal electrodes 101H and 101L), metal electrodes 201H and 201L in the first embodiment. It is configured in the same way.
- the active gas generation apparatus has a gas flow path partition wall 56H for separating the dielectric space for each gas ejection hole 55 and partitioning the gas flow path as compared with the first embodiment. And 56L are additionally provided.
- the shapes (diameters) of the plurality of gas ejection holes 55 are set to be the same, and the dielectric electrode 212 is provided with a plurality of gas flow path partition walls 56H and 56L.
- the gas flow rate of the active gas can be made uniform in the plurality of gas ejection holes 55 unit.
- FIG. 10 is a perspective view showing the configuration of the active gas generating electrode group 303 in the active gas generating apparatus of the third embodiment.
- FIG. 4A shows the structure of each of the dielectric electrode 113 of the high-voltage-side electrode component 1C (first electrode component) and the dielectric electrode 213 of the ground-side electrode component 2C (second electrode component).
- FIG. 4B is a perspective view showing a combined structure of the dielectric electrode 113 and the dielectric electrode 213 (active gas generating electrode group 303).
- FIG. 11 is a cross-sectional view showing the cross-sectional structure of the active gas generating electrode group 303.
- FIG. 11 (a) is a DD cross-section of FIG. 11 (b), and
- FIG. 11 (b) is a cross-sectional view of FIG. EE cross section is shown.
- the XYZ coordinate system is shown as appropriate.
- the dielectric electrode 113 and the dielectric electrode 213 have a rectangular plate structure in which the X direction is the longitudinal direction and the Y direction is the short direction.
- the center part may be referred to as a main area 73 and the both end parts may be referred to as end areas 74A and 74B, with a linear stepped shape part 72A and 72B described later as a boundary.
- Dielectric electrode 113 (first dielectric electrode) is formed to project downward in the entire region of central region R63 in main region 73 (the same shape as central region R60 in dielectric electrode 111 of the first embodiment).
- the central region step portion 71 is provided.
- the dielectric electrode 213 (second dielectric electrode) is the same as the dielectric electrode 211 of the first embodiment in the plan view when viewed in the center region R53 (region corresponding to the central region R63; the dielectric electrode 211 of the embodiment).
- the pair of first partial metal electrodes (first metal electrodes) not shown in FIGS. 10 and 11 is a dielectric in plan view, like the metal electrodes 101H and 101L of the first embodiment.
- the electrodes 113 are formed on the upper surface of the dielectric electrode 113 so as to face each other across the center region R63 (center region step portion 71).
- the X direction (first direction) is the longitudinal direction (electrode formation direction)
- the Y direction (second direction) orthogonal to the X direction is a direction facing each other.
- the pair of second partial metal electrodes is a pair of metal electrodes 201H and 201L in the first embodiment as viewed in plan. It is formed on the paper surface of the dielectric electrode 113 so as to have a region overlapping with the first partial metal electrode.
- the active gas generating electrode group 303 according to the third embodiment can be obtained by stacking and assembling the dielectric electrode 113 on the dielectric electrode 213.
- the central region stepped portion 71 is formed over the entire region of the central region R63, and the central region stepped portion 71 can be relatively easily overlapped with all of the plurality of gas ejection holes 55 in plan view. Strict positioning is unnecessary for the plurality of gas ejection holes 55 formed in the body electrode 213.
- the active gas generation electrode group 303 has a central region stepped portion 71 in the dielectric space between the dielectric electrode 113 and the dielectric electrode 213.
- a space below the region step portion 71 (a space where the plurality of gas ejection holes 55 exist) is formed to be narrower than the other spaces.
- the active gas generation apparatus supplies the source gas from the outside along the Y direction toward the lower side of the central region R63 of the dielectric space, thereby obtaining the activity obtained when the source gas passes through the discharge space. Gas can be generated and ejected from the gas ejection hole to the outside.
- the gas flow of the active gas corresponding to the plurality of gas ejection holes 55 under the central region R63 in the dielectric space Due to the presence of the central region step portion 71 having a relatively simple structure provided in the dielectric electrode 113, the gas flow of the active gas corresponding to the plurality of gas ejection holes 55 under the central region R63 in the dielectric space. Since the path can be narrowed down, the gas flow rate can be increased. As a result, a high-density active gas can be generated.
- the central region stepped portion 71 is formed in the dielectric electrode 113 and the plurality of gas ejection holes 55 are formed in the dielectric electrode 213, whereby the central region stepped portion 71 and the plurality of gas ejection holes 55 are formed in the dielectric electrode 113. Therefore, the strength of the active gas generation electrode group 303 can be improved by the amount that can be formed separately between the dielectric electrode 213 and the dielectric electrode 213.
- a pair of second partial metal electrodes (the metal electrodes 201H and 201L of the first embodiment) in the ground side electrode constituting portion 2C. It is possible to suppress the possibility of breakage during the metallization process. Since a plurality of fine gas ejection holes 55 are formed in the dielectric electrode 213 of the ground side electrode constituting portion 2C, stress concentration is likely to occur during heat treatment or the like during the metallization process. Therefore, when the central region stepped portion 71 is provided on the same dielectric electrode 213 in addition to the plurality of gas ejection holes 55, there is a concern that it is likely to be damaged due to the complex shape. As a result of avoiding the material of concern in the third embodiment, it is possible to apply a metallization process by a printing baking method in which a heat treatment is applied at a low cost when forming a metal electrode.
- the dielectric electrode 113 further has linear stepped shape portions 72A and 72B (a pair of end region step portions) formed to protrude downward in the boundary region between the main region 73 and the end regions 74A and 74B. is doing.
- the straight stepped portions 72A and 72B are formed to extend in the Y direction over the entire length in the short direction of the dielectric electrode 113 in plan view, and are formed along with the formation height of the central region stepped portion 71.
- the gap length in the discharge space is defined by the formation height of 72A and 72B.
- linear step shape portions 72A and 72B regulates the inflow of gas from the both ends in the X direction of the dielectric electrode 113 to the discharge space, similar to the linear step shape portions 52A and 52B of the first embodiment. ing.
- the gas inflow paths between the high voltage side electrode constituting portion 1C and the ground side electrode constituting portion 2C are only from two surfaces in the Y direction. Therefore, since the gas flow itself is relatively stabilized, the pressure distribution in the discharge space is constant, and a uniform discharge space can be formed.
- the dielectric electrode 113 further includes the linear stepped shape portions 72A and 72B, so that the gas having a short distance from both ends in the X direction among the plurality of gas ejection holes 55 provided in the dielectric electrode 213. Also in the ejection holes 55, the phenomenon that the inflow amount of the active gas changes due to the inflow of gas from the both end portions does not occur. Therefore, the active gas is generated without causing a variation among the plurality of gas ejection holes 55. Can erupt. As a result, since the pressure distribution is constant and the flow rates of the plurality of gas ejection holes 55 are the same, there is an effect that the generated radical density of the active gas is relatively the same in the active gas that has passed through the discharge space.
- the X direction is described as the first direction
- the Y direction that intersects the X direction at a right angle is described as the second direction.
- the first and second directions must intersect at a right angle exactly. There is no. However, it is desirable from the viewpoint of the effect that the first and second directions have a right-angled relationship.
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Abstract
Description
図12は本願発明の活性ガス生成装置における基本構成を模式的に示す説明図である。同図に示すように、高電圧側電極構成部1(第1の電極構成部)と、高電圧側電極構成部1の下方に設けられる接地側電極構成部2(第2の電極構成部)と、高電圧側電極構成部1及び接地側電極構成部2に交流電圧を印加する高周波電源5(交流電源部)とを基本構成として有している。
図1は実施の形態1の活性ガス生成装置における接地側電極構成部2Aの誘電体電極211の全体構造を示す斜視図である。図2は接地側電極構成部2Aの上面及び下面構造等を示す説明図である。同図(a) が上面図であり、同図(b) が同図(a) のA-A断面図、同図(c) が下面図であり、同図(d) が同図(a) のB-B断面図である。図3は図2(a) の着目領域R11を拡大して示す説明図であり、同図(a) が上面図、同図(b) が着目領域R11におけるA-A断面図である。なお、図1~図3それぞれにおいて適宜XYZ座標系を示している。
高電圧側電極構成部1A及び接地側電極構成部2Aを組み合わせて構成される活性ガス生成用電極群301は活性ガス生成装置の筺体内に収納されている。
図9は実施の形態2の活性ガス生成装置における接地側電極構成部2B(第2の電極構成部)の誘電体電極212の構造を示す斜視図である。図9において適宜XYZ座標系を示している。なお、実施の形態2では、複数のガス噴出孔55の直径は互いに同一に設定される基本構成を採用している。
図10は実施の形態3の活性ガス生成装置における活性ガス生成用電極群303の構成を示す斜視図である。同図(a) は高電圧側電極構成部1C(第1の電極構成部)の誘電体電極113及び接地側電極構成部2C(第2の電極構成部)の誘電体電極213それぞれの構造を示す斜視図、同図(b) は誘電体電極113と誘電体電極213との組み合わせ構造(活性ガス生成用電極群303)を示す斜視図である。また、図11は活性ガス生成用電極群303の断面構造を示す断面図であり、同図(a) は図11(b) のD-D断面、同図(b) は図11(b) のE-E断面を示している。なお、図10及び図11それぞれにおいて適宜XYZ座標系を示している。
上述した実施の形態では、X方向を第1の方向、X方向に直角に交差するY方向を第2の方向として説明したが、上記第1及び第2の方向は厳密に直角に交差する必要はない。ただし、第1及び第2の方向は直角に交差する関係にある方が効果の点から望ましい。
2A~2C 接地側電極構成部
5 高周波電源
31 活性ガス生成装置
33 成膜処理チャンバ
34 ウェハ
51 クサビ形段差形状部
52A,52B,72A,72B 直線形段差形状部5
55 ガス噴出孔
56H,56L ガス流路仕切壁
71 中央領域段差部
111,113 誘電体電極
101H,101L,201H,201L 金属電極
211~213 誘電体電極
301,303 活性ガス生成用電極群
Claims (15)
- 第1の電極構成部(1A)と
前記第1の電極構成部の下方に設けられる第2の電極構成部(2A,2B)と、
前記第1及び第2の電極構成部に交流電圧を印加する交流電源部(5)とを有し
前記交流電源部による前記交流電圧の印加により、前記第1及び第2の電極構成部間に放電空間が形成され、前記放電空間に供給された原料ガスを活性化して得られる活性ガスを生成する活性ガス生成装置であって、
前記第1の電極構成部は、第1の誘電体電極(111,112)と前記第1の誘電体電極の上面上に選択的に形成される第1の金属電極(101H,101L)とを有し、前記第2の電極構成部は、第2の誘電体電極(211,212)と前記第2の誘電体電極の下面上に選択的に形成される第2の金属電極(201H,201L)とを有し、前記交流電圧の印加により前記第1及び第2の誘電体電極が対向する誘電体空間内において、前記第1及び第2の金属電極が平面視重複する領域が前記放電空間として規定され、
前記第2の金属電極は、平面視して前記第2の誘電体電極の中央領域(R50)を挟んで互いに対向して形成される一対の第2の部分金属電極(201H,201L)を有し、前記一対の第2の部分金属電極は第1の方向を電極形成方向とし、前記第1の方向に交差する第2の方向を互いに対向する方向としており、
前記第1の金属電極は、平面視して前記一対の第2の部分金属電極と重複する領域を有する一対の第1の部分金属電極(110H,110L)を有し、
前記第2の誘電体電極は、
前記中央領域に形成され、前記活性ガスを外部に噴出するためのガス噴出孔(55)と、
前記中央領域において上方に突出して形成される中央領域段差部(51)とを備え、前記中央領域段差部は、平面視して前記ガス噴出孔に重複することなく、平面視して前記ガス噴出孔に近づくに従い前記第2の方向の形成幅が短くなるように形成されることを特徴とする、
活性ガス生成装置。 - 請求項1記載の活性ガス生成装置であって、
前記ガス噴出孔は、前記中央領域において前記第1の方向に沿って形成される複数のガス噴出孔を含み、
前記中央領域段差部は、平面視して前記複数のガス噴出孔それぞれに近づくに従い前記第2の方向の形成幅が短くなるように形成される、
活性ガス生成装置。 - 請求項2記載の活性ガス生成装置であって、
前記中央領域段差部の形成高さにより、前記放電空間におけるギャップ長が規定される、
活性ガス生成装置。 - 請求項3記載の活性ガス生成装置であって、
前記第2の誘電体電極は、
前記第1の方向の両端側に、上方に突出して形成される一対の端部領域段差部(52A,52B)をさらに有し、前記一対の端部領域段差部は平面視して前記第2の方向に延びて前記第2の誘電体電極の前記第2の方向の全長に亘って形成され、前記中央領域段差部の形成高さと共に前記一対の端部領域段差部の形成高さにより、前記放電空間におけるギャップ長が規定される、
活性ガス生成装置。 - 請求項2から請求項4のうち、いずれか1項に記載の活性ガス生成装置であって、
前記放電空間から前記複数のガス噴出孔に至る前記第2の方向における距離である非放電距離を10mm以上に設定したことを特徴とする、
活性ガス生成装置。 - 請求項5記載の活性ガス生成装置であって、
前記放電空間と前記中央領域段差部との間において、平面視した両者の最短距離が所定基準距離以上になるように、前記第1及び第2の金属電極の平面形状が設けられる、
活性ガス生成装置。 - 請求項2から請求項4のうち、いずれか1項に記載の活性ガス生成装置であって、
前記第1の金属電極と、前記第2の金属電極の平面形状の一部が異なるよう形成される、
活性ガス生成装置。 - 請求項1から請求項7のうち、いずれか1項に記載の活性ガス生成装置であって、
前記第1及び第2の電極構成部のうち、活性ガスと接触する領域であるガス接触領域を石英、アルミナ、窒化珪素あるいは窒化アルミを構成材料として形成したことを特徴とする、
活性ガス生成装置。 - 請求項1から請求項8のうち、いずれか1項に記載の活性ガス生成装置であって、
前記原料ガスは窒素、酸素、弗素、及び水素のうち少なくとも一つを含むガスである、
活性ガス生成装置。 - 請求項2から請求項7のうち、いずれか1項に記載の活性ガス生成装置であって、
前記複数のガス噴出孔の形状が前記複数のガス噴出孔間で互いに異なるように設定されることを特徴とする、
活性ガス生成装置。 - 請求項2から請求項7のうち、いずれか1項に記載の活性ガス生成装置であって、
前記複数のガス噴出孔の形状は互いに同一に設定され、
前記第2の誘電体電極は、
前記中央領域段差部に連結しつつ、上方に突出して形成される複数の分離用段差部(56H,56L)をさらに有し、前記複数の分離用段差部は前記第2の方向に延びて形成され、前記複数の分離用段差部の形成高さにより、前記放電空間におけるギャップ長が規定され、
前記複数の分離用段差部は、前記複数の噴出孔毎に前記誘電体空間が分離されるように形成されることを特徴とする、
活性ガス生成装置。 - 第1の電極構成部(1C)と
前記第1の電極構成部の下方に設けられる第2の電極構成部(2C)と、
前記第1及び第2の電極構成部に交流電圧を印加する交流電源部(5)とを有し
前記交流電源部による前記交流電圧の印加により、前記第1及び第2の電極構成部間に放電空間が形成され、前記放電空間に供給された原料ガスを活性化して得られる活性ガスを生成する活性ガス生成装置であって、
前記第1の電極構成部は、第1の誘電体電極(113)と前記第1の誘電体電極の上面上に選択的に形成された第1の金属電極とを有し、前記第2の電極構成部は、第2の誘電体電極(213)と前記第2の誘電体電極の下面上に選択的に形成された第2の金属電極とを有し、前記交流電圧の印加により前記第1及び第2の誘電体電極が対向する誘電体空間内において、前記第1及び第2の金属電極が平面視重複する領域が前記放電空間として規定され、
前記第1の金属電極は、平面視して前記第1の誘電体電極の中央領域(R63)を挟んで互いに対向して形成される一対の第1の部分金属電極を有し、前記一対の第1の部分金属電極は第1の方向を電極形成方向とし、前記第1の方向に交差する第2の方向を互いに対向する方向としており、
前記第2の金属電極は、平面視して前記一対の第1の部分金属電極と重複する領域を有する一対の第2の部分金属電極を有し、
前記第2の誘電体電極は、
平面視して前記中央領域に対応する領域(R53)において前記第1の方向に沿って形成され、それぞれが前記活性ガスを外部に噴出するための複数のガス噴出孔(55)を有し、
前記第1の誘電体電極は、
前記中央領域において下方に突出して形成される中央領域段差部(71)とを備え、前記中央領域段差部は前記複数のガス噴出孔の全てと平面視重複し、前記誘電体空間において、前記中央領域段差部下の空間は他の空間より狭くなるように形成されることを特徴とする、
活性ガス生成装置。 - 請求項12記載の活性ガス生成装置であって、
前記第1の誘電体電極は、
前記第1の方向の両端側に、下方に突出して形成される一対の端部領域段差部(7 2A,72B)をさらに有し、前記一対の端部領域段差部は前記第2の方向に延び前記第1の誘電体電極の前記第2の方向の全長に亘って形成され、前記一対の端部領域段差部の形成高さにより、前記放電空間におけるギャップ長が規定される、
活性ガス生成装置。 - 請求項1から請求項13のうちいずれか1項に記載の活性ガス生成装置(31)と、
前記第2の電極構成部の下方に配置され、内部の処理対象基板(34)に活性ガスによる成膜処理を行う成膜処理チャンバ(33)とを備え、
前記成膜処理チャンバは、前記活性ガス生成装置の前記ガス噴出孔から噴出される前記活性ガスを直接受けるように配置されることを特徴とする、
成膜処理装置。 - 請求項14記載の成膜処理装置であって、
前記活性ガス生成装置における前記放電空間の圧力を10kPa~大気圧に設定し、前記成膜処理チャンバ内の圧力を前記放電空間の圧力以下に設定することを特徴とする、
成膜処理装置。
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