WO2017080077A1 - 量子点彩膜基板的制备方法及量子点彩膜基板 - Google Patents

量子点彩膜基板的制备方法及量子点彩膜基板 Download PDF

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WO2017080077A1
WO2017080077A1 PCT/CN2015/099260 CN2015099260W WO2017080077A1 WO 2017080077 A1 WO2017080077 A1 WO 2017080077A1 CN 2015099260 W CN2015099260 W CN 2015099260W WO 2017080077 A1 WO2017080077 A1 WO 2017080077A1
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quantum dot
layer
pixel region
sub
green
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French (fr)
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李冬泽
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深圳市华星光电技术有限公司
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Priority to US14/915,890 priority Critical patent/US10048412B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133621—Illuminating devices providing coloured light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for preparing a quantum dot color film substrate and a quantum dot color film substrate.
  • quantum dots After the semiconductor material gradually decreases from the bulk phase to a certain critical dimension (1-20 nm), the volatility of the carrier becomes significant, the motion will be limited, resulting in an increase in kinetic energy, and the corresponding electron structure from the bulk phase.
  • the level structure becomes a discontinuity of quasi-splitting, a phenomenon known as the quantum size effect.
  • the more common semiconductor nanoparticles, quantum dots are mainly II-VI, II-V and IV-VI quantum dots. These kinds of quantum dots all obey the quantum size effect, and their properties change regularly with size, such as absorption and emission wavelengths vary with size. Therefore, semiconductor quantum dots have important applications in the fields of illumination, displays, lasers, and bioluminescent labels.
  • quantum dot materials has the advantages of concentrated luminescence spectrum, high color purity, and easy adjustment of the luminescent color by the size, structure or composition of the quantum dot material, which can be effectively applied to display devices to effectively increase the color gamut of the display device and Color reproduction capability, currently available in the field of quantum dot TV is the best embodiment of the material used in the display field.
  • the existing technology mainly focuses on mixing quantum dots of R (red) G (green) B (blue) in an engineering plastic film or glass tube to form a quantum dot film (QD film) or quantum dot.
  • QD film quantum dot film
  • the QD tube places the structure between the backlight and the display system, and is excited by a conventional white backlight to achieve a rich color gamut.
  • the above technology is relatively mature at present, but there are still some problems to be solved to some extent. For example, whether it is a QD film structure or a QD tube structure, the demand for the quantum dot material is relatively large, and the white light backlight is used to excite the mixture. Quantum dots also cause a decrease in light utilization.
  • the object of the present invention is to provide a method for preparing a quantum dot color film substrate, which can selectively annihilate a quantum dot material in a quantum dot by long-term positioning illumination by high-power ultraviolet light.
  • the high-gamut display is obtained while simplifying the manufacturing process of the quantum dot color film substrate and reducing the production cost.
  • Another object of the present invention is to provide a quantum dot color film substrate, which can meet the requirements of a display device for a high color gamut, has a simple preparation process and low cost.
  • the present invention first provides a method for preparing a quantum dot color film substrate, comprising the following steps:
  • Step 1 Providing a substrate, where the substrate includes a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region;
  • Step 2 forming a patterned red color resist layer, a patterned green color resist layer, and a patterned organic corresponding to the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region on the substrate a transparent photoresist layer; obtaining a color filter layer comprising a red color resist layer, a green color resist layer, and an organic transparent photoresist layer;
  • Step 3 coating a color filter on the color filter layer to thermally cure the quantum dot glue
  • the quantum dot glue is a heat curing glue comprising a red quantum dot material and a green quantum dot material;
  • Step 4 providing a reticle, the reticle comprising an opaque portion corresponding to the red sub-pixel region and the green sub-pixel region, and a light transmitting portion corresponding to the blue sub-pixel region; using the reticle by using an ultraviolet lamp
  • the quantum dot glue located on the blue sub-pixel region is irradiated with ultraviolet light for 3 to 40 hours, so that the quantum dot material in the quantum dot glue located on the blue sub-pixel region is in a long-term ultraviolet light.
  • Irreversible fluorescence quenching occurs under illumination, and the quantum dot glue located on the red sub-pixel region and the green sub-pixel region is not affected by ultraviolet light, and the quantum dot material therein is not affected in this step; a quenched quantum dot layer; thereby obtaining a quantum dot color film substrate including a substrate, a color filter film, and a quantum dot layer; the quantum dot layer including the second sub-pixel region and the green sub-pixel region a quantum dot layer, and a second quantum dot layer on the blue sub-pixel region;
  • the red quantum dot material and the green quantum dot material in the first quantum dot layer respectively emit red light and green light under blue light excitation; and the quantum dot material in the second quantum dot layer does not emit light under illumination.
  • the thickness of the quantum dot coating on the color filter layer is 0.5-20 ⁇ m.
  • the quantum dot material in the quantum dot glue is one or more of a group II-VI quantum dot material and a group I-III-VI quantum dot material.
  • Quantum dot material within the quantum dot gum ZnCdSe 2, CdSe, CdTe, CuInS one or more of the 2, ZnCuInS 3.
  • the quantum dot color film substrate is used in a display device whose backlight is blue light.
  • the present invention also provides a quantum dot color film substrate, comprising: a substrate, a color filter layer on the substrate, and a quantum dot layer on the color filter layer;
  • the substrate includes a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region; the color filter layer includes the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region respectively.
  • the quantum dot layer includes a first quantum dot layer on the red sub-pixel region and a green sub-pixel region, and a second quantum dot layer on the blue sub-pixel region; the quantum dot layer is composed of quantum Dispensing formation; the quantum dot glue is obtained by mixing red quantum dot material and green quantum dot material in a thermosetting glue;
  • the red quantum dot material and the green quantum dot material in the first quantum dot layer respectively emit red light and green light under blue light excitation, and the quantum dot material in the second quantum dot layer has a duration of 3 to 40 hours.
  • An irreversible fluorescence quenching quantum dot material occurs under ultraviolet light irradiation, and the quantum dot material in the second quantum dot layer does not emit light under illumination;
  • the quantum dot color film substrate is used in a display device whose backlight is blue light.
  • the display device is a liquid crystal display device, an organic electroluminescence display device, or a quantum dot electroluminescence display device.
  • the quantum dot layer has a thickness of 0.5 to 20 ⁇ m.
  • the quantum dot material in the quantum dot glue is one or more of a group II-VI quantum dot material and a group I-III-VI quantum dot material.
  • Quantum dot material within the quantum dot gum ZnCdSe 2, CdSe, CdTe, CuInS one or more of the 2, ZnCuInS 3.
  • the present invention also provides a quantum dot color film substrate, comprising: a substrate, a color filter layer on the substrate, and a quantum dot layer on the color filter layer;
  • the substrate includes a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region; the color filter layer includes the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region respectively.
  • the quantum dot layer includes a first quantum dot layer on the red sub-pixel region and a green sub-pixel region, and a second quantum dot layer on the blue sub-pixel region; the quantum dot layer is composed of quantum Dispensing formation;
  • the quantum dot glue is obtained by mixing a red quantum dot material and a green quantum dot material in a heat curing glue; the red quantum dot material and the green quantum dot material in the first quantum dot layer respectively emit red light under blue light excitation And the green light; the quantum dot material in the second quantum dot layer is a quantum dot material which undergoes irreversible fluorescence quenching under ultraviolet light irradiation for 3 to 40 hours, and the quantum dot in the second quantum dot layer The material does not illuminate under illumination;
  • the quantum dot color film substrate is used in a display device whose backlight is blue light;
  • the display device is a liquid crystal display device, an organic electroluminescence display device, or Quantum dot electroluminescent display device;
  • the quantum dot layer has a thickness of 0.5-20 ⁇ m
  • the quantum dot material in the quantum dot glue is one or more of a group II-VI quantum dot material and a group I-III-VI quantum dot material;
  • quantum dot in the quantum dot material gum ZnCdSe 2, CdSe, CdTe, CuInS 2, in one or more ZnCuInS 3.
  • the present invention provides a method for preparing a quantum dot color film substrate and a quantum dot color film substrate.
  • the method for preparing a quantum dot color film substrate of the invention is characterized in that the quantum dot material in the quantum dot glue is selectively quenched by long-term positioning illumination by high-power ultraviolet light to obtain a selectively quenched quantum dot layer, that is, germanium.
  • the etching process can realize the patterned structure of the quantum dot layer, simplify the manufacturing process of the quantum dot color film substrate, and reduce the production cost; the quantum dot color film substrate of the invention includes the selection of the ultraviolet light quenching technology.
  • the quenching quantum dot layer can effectively improve the color gamut of the display device, and the preparation method thereof is simple, and the quantum dot layer does not include the blue quantum dot material, and the blue backlight is used in combination with the organic transparent photoresist layer. At the same time, the material cost is reduced while increasing the light utilization rate.
  • FIG. 1 is a schematic flow chart of a method for preparing a quantum dot color film substrate of the present invention
  • FIG. 2 is a schematic view showing the step 4 of the method for preparing a quantum dot color film substrate of the present invention
  • FIG 3 is a schematic cross-sectional structural view of a quantum dot color film substrate of the present invention.
  • the present invention first provides a method for preparing a quantum dot color film substrate, comprising the following steps:
  • Step 1 providing a substrate 10, the substrate 10 includes a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region;
  • Step 2 forming a patterned red color resist layer 21, a patterned green color resist layer 22, and a pattern on the substrate 10 corresponding to the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region, respectively.
  • Organic transparent photoresist layer 23 obtained red color resist layer 21, green color resist Layer 22, and color filter layer 20 of organic transparent photoresist layer 23;
  • Step 3 applying a layer of quantum dot glue having a thickness of 0.5-20 ⁇ m on the color filter layer 20 to thermally cure the quantum dot glue;
  • the quantum dot glue is a thermosetting glue comprising a red quantum dot material and a green quantum dot material; specifically, the quantum dot material in the quantum dot glue is a II-VI quantum dot material, I-III one or more aromatic -VI quantum dot material; preferably, the quantum dot in the quantum dot material gum ZnCdSe 2, CdSe, CdTe, CuInS 2, in one or more ZnCuInS 3.
  • Step 4 as shown in FIG. 2, a photomask 50 is provided, the photomask 50 includes an opaque portion 51 corresponding to a red sub-pixel region and a green sub-pixel region, and a light-transmitting portion corresponding to the blue sub-pixel region Using a high-power ultraviolet lamp, the quantum dot glue located on the blue sub-pixel region is irradiated with ultraviolet light of a duration of 3 to 40 h by using the photomask 50 to make a quantum located on the blue sub-pixel region.
  • the quantum dot material in the dispensing material undergoes irreversible fluorescence quenching under long-term ultraviolet light irradiation, and the quantum dot glue located on the red sub-pixel region and the green sub-pixel region is not irradiated by ultraviolet light, and the inside thereof
  • the quantum dot material is not affected in this step; thereby obtaining a selectively quenched quantum dot layer 30; thereby obtaining a quantum dot color film substrate including the substrate 10, the color filter film 20, and the quantum dot layer 30, the structure of which is As shown in FIG. 3, the quantum dot layer 30 includes a first quantum dot layer 31 on the red sub-pixel region and the green sub-pixel region, and a second quantum dot layer 32 on the blue sub-pixel region.
  • the first quantum dot The red quantum dot material and the green quantum dot material in the layer 31 respectively emit red light and green light under blue light excitation, and the quantum dot material in the second quantum dot layer 32 does not emit light under illumination by the light source.
  • the quantum dot color filter substrate When the quantum dot color filter substrate is used for display in a blue light display device, the mixed light of red light and green light emitted by the first quantum dot layer 31 passes through the red color resist layer 21 and the green color resist.
  • the layer 22 is filtered to display red and green respectively, and the blue backlight directly passes through the second quantum dot layer 32 and the organic transparent photoresist layer 23 to be blue, thereby realizing color display and effectively improving the display color gamut index.
  • the quantum dot layer 30 does not contain a blue quantum dot material, and the blue backlight is used in combination with the organic transparent photoresist layer to reduce the material cost while improving the light utilization efficiency.
  • the effect of realizing fluorescence quenching on the quantum dot material is directly related to the power of the ultraviolet light and the irradiation time.
  • the quantum dot color film substrate of the structure is in a subsequent process or use process. In the case of short-term exposure to ultraviolet light, fluorescence quenching of the quantum dot material in the quantum dot layer will not occur.
  • the ultraviolet light selective quenching mechanism of the invention is that the quantum dot glue is irradiated by high-power ultraviolet light for a long time under the aid of the reticle, and the quantum dot material is not irradiated by high-power ultraviolet light for a long time, and the photogenerated electrons and holes are not Intermittent stimulated separation, under normal circumstances, the excited electrons will return to the valence band and cavity recombination in the form of no radiation transition, emitting fluorescence, but long time, high power and high energy.
  • the excitation of the light source will change the process, and the composite path of photoexcitons will become difficult, which will inevitably be converted into other forms of energy, during which the excited electrons will undergo irreversible interstitial crossing and other energy transfer. As a result, the fluorescence properties of the quantum dots are irreversibly damaged. After prolonged ultraviolet excitation, the quantum dot material undergoes fluorescence quenching.
  • the preparation method of the quantum dot color film substrate of the invention uses a simple thermosetting glue to disperse the quantum dot material, thereby reducing the interference of the chemical environment around the quantum dot material on the light emission of the quantum dot material, and realizing the long-term positioning illumination by high-power ultraviolet light.
  • the quantum dot material in the quantum dot glue is selectively quenched to obtain a selectively quenched quantum dot layer, that is, the pattern structure of the quantum dot layer can be realized without an etching process, and the manufacturing process of the quantum dot color film substrate is simplified. , reducing production costs.
  • the present invention further provides a quantum dot color film substrate, comprising: a substrate 10, a color filter layer 20 on the substrate 10, and a quantum dot layer on the color filter layer 20. 30;
  • the substrate 10 includes a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region.
  • the color filter layer 20 includes the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region. a red color resist layer 21, a green color resist layer 22, and an organic transparent photoresist layer 23;
  • the quantum dot layer 30 includes a first quantum dot layer 31 on the red sub-pixel region and the green sub-pixel region, and a second quantum dot layer 32 on the blue sub-pixel region; the quantum dot The layer 30 is formed by a quantum dot glue; the quantum dot glue is obtained by mixing a red quantum dot material and a green quantum dot material in a heat curing glue; the red quantum dot material and the green quantum dot in the first quantum dot layer 31; The material emits red light and green light respectively under blue light excitation, and the quantum dot material in the second quantum dot layer 32 is an quantum dot material which undergoes irreversible fluorescence quenching under ultraviolet light irradiation for 3 to 40 hours. The quantum dot material in the second quantum dot layer 32 does not emit light under illumination by the light source.
  • the quantum dot color film substrate is used in a display device whose backlight is blue light; specifically, the quantum dot color film substrate can be used for a liquid crystal display device (LCD) or an organic electroluminescence display device (Organic Light- Emitting Display, OLED), or other types of display devices such as Quantum Dot Light Emitting Display (QLED).
  • LCD liquid crystal display device
  • OLED organic electroluminescence display device
  • QLED Quantum Dot Light Emitting Display
  • the quantum dot layer 30 has a thickness of 0.5-20 ⁇ m; when the backlight is illuminated, the red quantum dot material in the first quantum dot layer 31 emits a wavelength range of 630- under the excitation of the blue backlight. 20,000 nm red light, the green quantum dot material in the first quantum dot layer 31 emits green light having a wavelength range of 500-560 nm under the excitation of the blue backlight, and the quantum dot material of the second quantum dot layer 32 a quenched quantum dot material that does not illuminate when illuminated by a backlight; When the quantum dot color filter substrate is used for display in a blue light display device, the mixed light of red light and green light emitted by the first quantum dot layer 31 passes through the red color resist layer 21 and the green color resist.
  • the red and green colors are respectively displayed, and the blue backlight directly passes through the second quantum dot layer 32 and the organic transparent photoresist layer 23 to be blue, thereby realizing color display and effectively improving the display color gamut index.
  • the quantum dot layer 30 does not include a blue quantum dot material, and the use of the blue backlight and the organic transparent photoresist layer reduces the material cost while improving the light utilization efficiency.
  • the quantum dot color film substrate further includes a black matrix 40 on the substrate 10.
  • the quantum dot material in the quantum dot glue is one or more of a group II-VI quantum dot material and a group I-III-VI quantum dot material; preferably, the quantum in the quantum dot glue
  • the spot material is one or more of ZnCdSe 2 , CdSe, CdTe, CuInS 2 , and ZnCuInS 3 .
  • the method for preparing a quantum dot color film substrate of the present invention is characterized in that the quantum dot material in the quantum dot is selectively quenched by high-frequency ultraviolet light for a long time to obtain a quantum of selective quenching.
  • the dot layer that is, the etching structure can realize the patterned structure of the quantum dot layer, simplifies the manufacturing process of the quantum dot color film substrate, and reduces the production cost;
  • the quantum dot color film substrate of the present invention includes the use of ultraviolet light.
  • the quantum dot layer which is selectively quenched by the technique can effectively improve the color gamut of the display device, and the preparation method thereof is simple, and the quantum dot layer does not contain the blue quantum dot material, and the blue backlight and the organic transparent photoresist are used.
  • the combination of layers reduces the cost of materials while increasing light utilization.

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Abstract

一种量子点彩膜基板的制备方法及量子点彩膜基板，该制备方法通过大功率紫外光长时间定位照射以对量子点胶内的量子点材料进行选择性猝灭，从而得到选择性猝灭的量子点层（30），即毋需刻蚀过程即可实现量子点层（30）的图案化结构，简化了量子点彩膜基板的制造工艺，降低了生产成本；量子点彩膜基板，包括采用紫外光猝灭技术而得到选择性猝灭的量子点层（30），能够有效提高显示装置的色域的同时，其制备方法简单，且该量子点层（30）不包含蓝色量子点材料，将蓝光背光与有机透明光阻层（23）搭配使用，在提高光利用率的同时缩减了材料成本。

Description

量子点彩膜基板的制备方法及量子点彩膜基板 技术领域
本发明涉及显示技术领域，尤其涉及一种量子点彩膜基板的制备方法及量子点彩膜基板。
背景技术
随着显示技术的不断发展，人们对显示装置的显示质量要求也越来越高。目前市面上的液晶电视能表现的色域在68％-72％NTSC(National Television Standards Committee)之间，因而不能提供高品质的色彩效果。为提高液晶电视的表现色域，高色域背光技术正成为行业内研究的重点。
半导体材料从体相逐渐减小至一定临界尺寸(1～20nm)后，其载流子的波动性变得显著，运动将受限，导致动能的增加，相应的电子结构从体相连续的能级结构变成准***的不连续，这一现象称作量子尺寸效应。比较常见的半导体纳米粒子即量子点主要有II-VI族、II-V族以及IV-VI族量子点。这些种类的量子点都十分遵守量子尺寸效应，其性质随尺寸呈现规律性变化，例如吸收及发射波长随尺寸变化而变化。因此，半导体量子点在照明、显示器、激光器以及生物荧光标记等领域都有着十分重要的应用。
利用量子点材料具有发光光谱集中，色纯度高、且发光颜色可通过量子点材料的尺寸、结构或成分进行简易调节的这些优点将其应用在显示装置中可有效地提升显示装置的色域及色彩还原能力，目前市售的量子点电视就是该材料应用于显示领域的最好体现。然而现有的技术主要集中于将发光波段在R(红)G(绿)B(蓝)的量子点混合封装于工程塑料薄膜或玻璃管中而制成量子点膜(QD film)或量子点管(QD tube)，并将该结构置于背光与显示***之间的位置，以传统白光背光激发，而达到丰富色域的目的。上述技术目前已较为成熟，但是在一定程度上还存在着问题有待完善，例如无论是QD film结构还是QD tube结构，对于量子点材料的用量需求都是比较大的，而且采用白光背光源激发混合量子点，也会造成光利用率的下降。
发明内容
本发明的目的在于提供一种量子点彩膜基板的制备方法，通过大功率紫外光长时间定位照射实现对量子点胶内的量子点材料进行选择性猝灭， 在获得高色域显示的同时简化量子点彩膜基板的制造工艺，降低生产成本。
本发明的目的还在于提供一种量子点彩膜基板，能够满足显示装置对于高色域的需求，制备工艺简单，成本低。
为实现上述目的，本发明首先提供了一种量子点彩膜基板的制备方法，包括如下步骤：
步骤1、提供基板，所述基板包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；
步骤2、在所述基板上分别对应所述红色子像素区域、绿色子像素区域、及蓝色子像素区域形成图形化的红色色阻层、图形化的绿色色阻层、及图形化的有机透明光阻层；得到包含红色色阻层、绿色色阻层、及有机透明光阻层的彩色滤光层；
步骤3、在所述彩色滤光层上涂布一层量子点胶，对所述量子点胶进行热固化；
所述量子点胶为包含红色量子点材料、及绿色量子点材料的热固化胶；
步骤4、提供光罩，所述光罩包括对应红色子像素区域和绿色子像素区域的不透光部分、及对应所述蓝色子像素区域的透光部分；采用紫外灯利用所述光罩对位于所述蓝色子像素区域上的量子点胶进行时长为3～40h的紫外光照射，使位于所述蓝色子像素区域上的量子点胶内的量子点材料在长时间的紫外光照射下发生不可逆转的荧光猝灭，位于所述红色子像素区域和绿色子像素区域上的量子点胶由于不被紫外光照射，其内的量子点材料在该步骤中不受影响；得到选择性猝灭的量子点层；从而得到包括基板、彩色滤光膜、及量子点层的量子点彩膜基板；所述量子点层包括位于所述红色子像素区域和绿色子像素区域上的第一量子点层、及位于所述蓝色子像素区域上的第二量子点层；
所述第一量子点层内的红色量子点材料、绿色量子点材料在蓝光激发下分别发出红光与绿光；所述第二量子点层内量子点材料在光照下不发光。
所述步骤3中，所述彩色滤光层上涂布量子点胶的厚度为0.5-20μm。
所述量子点胶内的量子点材料为Ⅱ-Ⅵ族量子点材料、Ⅰ-Ⅲ-Ⅵ族量子点材料中的一种或多种。
所述量子点胶内的量子点材料为ZnCdSe2，CdSe，CdTe，CuInS2，ZnCuInS3中的一种或多种。
所述量子点彩膜基板用于背光为蓝光的显示装置中。
本发明还提供一种量子点彩膜基板，包括，基板、位于所述基板上的彩色滤光层、及位于所述彩色滤光层上的量子点层；
所述基板包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；所述彩色滤光层包括分别位于所述红色子像素区域、绿色子像素区域、及蓝色子像素区域上的红色色阻层、绿色色阻层、及有机透明光阻层；
所述量子点层包括位于所述红色子像素区域和绿色子像素区域上的第一量子点层、及位于所述蓝色子像素区域上的第二量子点层；所述量子点层由量子点胶形成；所述量子点胶由红色量子点材料、及绿色量子点材料混合于热固化胶中得到；
所述第一量子点层内的红色量子点材料、绿色量子点材料在蓝光激发下分别发出红光与绿光，所述第二量子点层内量子点材料为在时长为3～40小时的紫外光照射下发生不可逆转的荧光猝灭的量子点材料，所述第二量子点层内量子点材料在光照下不发光；
所述量子点彩膜基板用于背光为蓝光的显示装置中。
所述显示装置为液晶显示装置、有机电致发光显示装置、或者量子点电致发光显示装置。
所述量子点层的厚度为0.5-20μm。
所述量子点胶内的量子点材料为Ⅱ-Ⅵ族量子点材料、Ⅰ-Ⅲ-Ⅵ族量子点材料中的一种或多种。
所述量子点胶内的量子点材料为ZnCdSe2，CdSe，CdTe，CuInS2，ZnCuInS3中的一种或多种。
本发明还提供一种量子点彩膜基板，包括，基板、位于所述基板上的彩色滤光层、及位于所述彩色滤光层上的量子点层；
所述基板包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；所述彩色滤光层包括分别位于所述红色子像素区域、绿色子像素区域、及蓝色子像素区域上的红色色阻层、绿色色阻层、及有机透明光阻层；
所述量子点层包括位于所述红色子像素区域和绿色子像素区域上的第一量子点层、及位于所述蓝色子像素区域上的第二量子点层；所述量子点层由量子点胶形成；
所述量子点胶由红色量子点材料、及绿色量子点材料混合于热固化胶中得到；所述第一量子点层内的红色量子点材料、绿色量子点材料在蓝光激发下分别发出红光与绿光；所述第二量子点层内量子点材料为在时长为3～40小时的紫外光照射下发生不可逆转的荧光猝灭的量子点材料，所述第二量子点层内量子点材料在光照下不发光；
所述量子点彩膜基板用于背光为蓝光的显示装置中；
其中，所述显示装置为液晶显示装置、有机电致发光显示装置、或者 量子点电致发光显示装置；
其中，所述量子点层的厚度为0.5-20μm；
其中，所述量子点胶内的量子点材料为Ⅱ-Ⅵ族量子点材料、Ⅰ-Ⅲ-Ⅵ族量子点材料中的一种或多种；
其中，所述量子点胶内的量子点材料为ZnCdSe2，CdSe，CdTe，CuInS2，ZnCuInS3中的一种或多种。
本发明的有益效果：本发明提供了一种量子点彩膜基板的制备方法及量子点彩膜基板。本发明的量子点彩膜基板的制备方法，通过大功率紫外光长时间定位照射以对量子点胶内的量子点材料进行选择性猝灭，从而得到选择性猝灭的量子点层，即毋需刻蚀过程即可实现量子点层的图案化结构，简化了量子点彩膜基板的制造工艺，降低了生产成本；本发明的量子点彩膜基板，包括采用紫外光猝灭技术而得到选择性猝灭的量子点层，能够有效提高显示装置的色域的同时，其制备方法简单，且该量子点层不包含蓝色量子点材料，将蓝光背光与有机透明光阻层的搭配使用，在提高光利用率的情况下同时缩减了材料成本。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为本发明的量子点彩膜基板的制备方法的流程示意图；
图2为本发明的量子点彩膜基板的制备方法的步骤4的示意图；
图3为本发明的量子点彩膜基板的剖面结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明首先提供一种量子点彩膜基板的制备方法，包括如下步骤：
步骤1、提供基板10，所述基板10包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；
步骤2、在所述基板10上分别对应所述红色子像素区域、绿色子像素区域、及蓝色子像素区域形成图形化的红色色阻层21、图形化的绿色色阻层22、及图形化的有机透明光阻层23；得到包含红色色阻层21、绿色色阻 层22、及有机透明光阻层23的彩色滤光层20；
步骤3、在所述彩色滤光层20上涂布一层厚度为0.5-20μm的量子点胶，对所述量子点胶进行热固化；
具体的，所述量子点胶为包含红色量子点材料、及绿色量子点材料的热固化胶；具体的，所述量子点胶内的量子点材料为Ⅱ-Ⅵ族量子点材料、Ⅰ-Ⅲ-Ⅵ族量子点材料中的一种或多种；优选的，所述量子点胶内的量子点材料为ZnCdSe2，CdSe，CdTe，CuInS2，ZnCuInS3中的一种或多种。
步骤4、如图2所示，提供光罩50，所述光罩50包括对应红色子像素区域和绿色子像素区域的不透光部分51、及对应所述蓝色子像素区域的透光部分52；采用大功率紫外灯利用所述光罩50对位于所述蓝色子像素区域上的量子点胶进行时长为3～40h的紫外光照射，使位于所述蓝色子像素区域上的量子点胶内的量子点材料在长时间的紫外光照射下发生不可逆转的荧光猝灭，位于所述红色子像素区域和绿色子像素区域上的量子点胶由于不被紫外光照射，其内的量子点材料在该步骤中不受影响；从而得到选择性猝灭的量子点层30；从而得到包括基板10、彩色滤光膜20、及量子点层30的量子点彩膜基板，其结构如图3所示；所述量子点层30包括位于所述红色子像素区域和绿色子像素区域上的第一量子点层31、及位于所述蓝色子像素区域上的第二量子点层32；所述第一量子点层31内的红色量子点材料、绿色量子点材料在蓝光激发下分别发出红光与绿光，所述第二量子点层32内量子点材料在光源照射下不发光。
则所述量子点彩膜基板用于背光为蓝光的显示装置中而进行显示时，所述第一量子点层31发出的红光与绿光的混合光经红色色阻层21和绿色色阻层22过滤而分别显红色、绿色，蓝光背光直接穿过第二量子点层32、有机透明光阻层23而显蓝色，从而实现了彩色显示，并能够有效提高显示色域指数，且所述量子点层30内不包含蓝色量子点材料，将蓝光背光与有机透明光阻层的搭配使用，在提高光利用率的情况下同时缩减了材料成本。
具体的，所述步骤4中，对量子点材料实现荧光猝灭的效果与紫外光的功率与照射时间有直接关系，经步骤4后该结构的量子点彩膜基板在后续的制程或者使用过程中，接受短时间的紫外光照射下将不会发生量子点层内量子点材料的荧光猝灭。
本发明的紫外光选择性猝灭机理在于，在光罩辅助下采用大功率紫外光长时间定位照射量子点胶，量子点材料在大功率紫外光的长时间照射下，光生电子与空穴不间断的受激分离，在正常情况下受激电子会以无辐射跃迁的形式回到价带与空穴复合，发出荧光，但是长时间大功率高能量 的光源激发会使这一过程发生变化，光生激子的复合路径变得困难，不可避免的会转化成其它形式的能量，此间受激电子将发生不可逆的隙间穿越及其它能量转移，这一结果会对量子点的荧光性质产生不可逆的损害，长时间紫外光激发后，量子点材料会发生荧光猝灭。
本发明的量子点彩膜基板的制备方法，使用组成简单的热固化胶分散量子点材料，减少量子点材料周围化学环境对量子点材料发光的干扰，通过大功率紫外光长时间定位照射实现对量子点胶内的量子点材料进行选择性猝灭，得到选择性猝灭的量子点层，即毋需刻蚀过程即可实现量子点层的图案结构，简化了量子点彩膜基板的制造工艺，降低了生产成本。
如图3所示，本发明还提供一种量子点彩膜基板，包括，基板10、位于所述基板10上的彩色滤光层20、及位于所述彩色滤光层20上的量子点层30；
所述基板10包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；所述彩色滤光层20包括分别位于所述红色子像素区域、绿色子像素区域、及蓝色子像素区域上的红色色阻层21、绿色色阻层22、及有机透明光阻层23；
所述量子点层30包括位于所述红色子像素区域和绿色子像素区域上的第一量子点层31、及位于所述蓝色子像素区域上的第二量子点层32；所述量子点层30由量子点胶形成；所述量子点胶由红色量子点材料、及绿色量子点材料混合于热固化胶中得到；所述第一量子点层31内的红色量子点材料、绿色量子点材料在蓝光激发下分别发出红光与绿光，所述第二量子点层32内量子点材料为在时长为3～40小时的紫外光照射下发生不可逆转的荧光猝灭的量子点材料，所述第二量子点层32内量子点材料在光源照射下不发光。
所述量子点彩膜基板用于背光为蓝光的显示装置中；具体的，所述量子点彩膜基板可用于液晶显示装置(Liquid Crystal Display，LCD)、有机电致发光显示装置(Organic Light-Emitting Display，OLED)、或者量子点电致发光显示装置(Quantum Dot Light Emitting Display，QLED)等其他类型的显示装置中。
具体的，所述量子点层30的厚度为0.5-20μm；在背光照射时，其中，所述第一量子点层31内的红色量子点材料在蓝光背光的光激发下发出波长范围为630-690nm的红光，所述第一量子点层31内的绿色量子点材料在蓝光背光的光激发下发出波长范围为500-560nm的绿光，而所述第二量子点层32的量子点材料为荧光猝灭的量子点材料，因此在背光照射时不发光； 则所述量子点彩膜基板用于背光为蓝光的显示装置中而进行显示时，所述第一量子点层31发出的红光与绿光的混合光经红色色阻层21和绿色色阻层22过滤后而分别显红色、绿色，蓝光背光直接穿过第二量子点层32、有机透明光阻层23而显蓝色，从而实现了彩色显示，并能够有效提高显示色域指数，且所述量子点层30内不包含蓝色量子点材料，将蓝光背光与有机透明光阻层的搭配使用，在提高光利用率的情况下同时缩减了材料成本。
具体的，所述量子点彩膜基板还包括位于所述基板10上的黑色矩阵40。
具体的，所述量子点胶内的量子点材料为Ⅱ-Ⅵ族量子点材料、Ⅰ-Ⅲ-Ⅵ族量子点材料中的一种或多种；优选的，所述量子点胶内的量子点材料为ZnCdSe2，CdSe，CdTe，CuInS2，ZnCuInS3中的一种或多种。
综上所述，本发明的量子点彩膜基板的制备方法，通过大功率紫外光长时间定位照射以对量子点胶内的量子点材料进行选择性猝灭，从而得到选择性猝灭的量子点层，即毋需刻蚀过程即可实现量子点层的图案化结构，简化了量子点彩膜基板的制造工艺，降低了生产成本；本发明的量子点彩膜基板，包括采用紫外光猝灭技术而得到选择性猝灭的量子点层，能够有效提高显示装置的色域的同时，其制备方法简单，且该量子点层不包含蓝色量子点材料，将蓝光背光与有机透明光阻层的搭配使用，在提高光利用率的情况下同时缩减了材料成本。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种量子点彩膜基板的制备方法，包括如下步骤：
    步骤1、提供基板，所述基板包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；
    步骤2、在所述基板上分别对应所述红色子像素区域、绿色子像素区域、及蓝色子像素区域形成图形化的红色色阻层、图形化的绿色色阻层、及图形化的有机透明光阻层；得到包含红色色阻层、绿色色阻层、及有机透明光阻层的彩色滤光层；
    步骤3、在所述彩色滤光层上涂布一层量子点胶，对所述量子点胶进行热固化；
    所述量子点胶为包含红色量子点材料、及绿色量子点材料的热固化胶；
    步骤4、提供光罩，所述光罩包括对应红色子像素区域和绿色子像素区域的不透光部分、及对应所述蓝色子像素区域的透光部分；采用紫外灯利用所述光罩对位于所述蓝色子像素区域上的量子点胶进行时长为3～40h的紫外光照射，使位于所述蓝色子像素区域上的量子点胶内的量子点材料在长时间的紫外光照射下发生不可逆转的荧光猝灭，位于所述红色子像素区域和绿色子像素区域上的量子点胶由于不被紫外光照射，其内的量子点材料在该步骤中不受影响；得到选择性猝灭的量子点层；从而得到包括基板、彩色滤光膜、及量子点层的量子点彩膜基板；所述量子点层包括位于所述红色子像素区域和绿色子像素区域上的第一量子点层、及位于所述蓝色子像素区域上的第二量子点层；
    所述第一量子点层内的红色量子点材料、绿色量子点材料在蓝光激发下分别发出红光与绿光；所述第二量子点层内量子点材料在光照下不发光。
  2. 如权利要求1所述的量子点彩膜基板的制备方法，其中，所述步骤3中，所述彩色滤光层上涂布量子点胶的厚度为0.5-20μm。
  3. 如权利要求1所述的量子点彩膜基板的制备方法，其中，所述量子点胶内的量子点材料为Ⅱ-Ⅵ族量子点材料、Ⅰ-Ⅲ-Ⅵ族量子点材料中的一种或多种。
  4. 如权利要求3所述的量子点彩膜基板的制备方法，其中，所述量子点胶内的量子点材料为ZnCdSe2，CdSe，CdTe，CuInS2，ZnCuInS3中的一种或多种。
  5. 如权利要求1所述的量子点彩膜基板的制备方法，其中，所述量子 点彩膜基板用于背光为蓝光的显示装置中。
  6. 一种量子点彩膜基板，包括，基板、位于所述基板上的彩色滤光层、及位于所述彩色滤光层上的量子点层；
    所述基板包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；所述彩色滤光层包括分别位于所述红色子像素区域、绿色子像素区域、及蓝色子像素区域上的红色色阻层、绿色色阻层、及有机透明光阻层；
    所述量子点层包括位于所述红色子像素区域和绿色子像素区域上的第一量子点层、及位于所述蓝色子像素区域上的第二量子点层；所述量子点层由量子点胶形成；
    所述量子点胶由红色量子点材料、及绿色量子点材料混合于热固化胶中得到；所述第一量子点层内的红色量子点材料、绿色量子点材料在蓝光激发下分别发出红光与绿光；所述第二量子点层内量子点材料为在时长为3～40小时的紫外光照射下发生不可逆转的荧光猝灭的量子点材料，所述第二量子点层内量子点材料在光照下不发光；
    所述量子点彩膜基板用于背光为蓝光的显示装置中。
  7. 如权利要求6所述的量子点彩膜基板，其中，所述显示装置为液晶显示装置、有机电致发光显示装置、或者量子点电致发光显示装置。
  8. 如权利要求6所述的量子点彩膜基板，其中，所述量子点层的厚度为0.5-20μm。
  9. 如权利要求6所述的量子点彩膜基板，其中，所述量子点胶内的量子点材料为Ⅱ-Ⅵ族量子点材料、Ⅰ-Ⅲ-Ⅵ族量子点材料中的一种或多种。
  10. 如权利要求9所述的量子点彩膜基板，其中，所述量子点胶内的量子点材料为ZnCdSe2，CdSe，CdTe，CuInS2，ZnCuInS3中的一种或多种。
  11. 一种量子点彩膜基板，包括，基板、位于所述基板上的彩色滤光层、及位于所述彩色滤光层上的量子点层；
    所述基板包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；所述彩色滤光层包括分别位于所述红色子像素区域、绿色子像素区域、及蓝色子像素区域上的红色色阻层、绿色色阻层、及有机透明光阻层；
    所述量子点层包括位于所述红色子像素区域和绿色子像素区域上的第一量子点层、及位于所述蓝色子像素区域上的第二量子点层；所述量子点层由量子点胶形成；
    所述量子点胶由红色量子点材料、及绿色量子点材料混合于热固化胶中得到；所述第一量子点层内的红色量子点材料、绿色量子点材料在蓝光激发下分别发出红光与绿光；所述第二量子点层内量子点材料为在时长为 3～40小时的紫外光照射下发生不可逆转的荧光猝灭的量子点材料，所述第二量子点层内量子点材料在光照下不发光；
    所述量子点彩膜基板用于背光为蓝光的显示装置中；
    其中，所述显示装置为液晶显示装置、有机电致发光显示装置、或者量子点电致发光显示装置；
    其中，所述量子点层的厚度为0.5-20μm；
    其中，所述量子点胶内的量子点材料为Ⅱ-Ⅵ族量子点材料、Ⅰ-Ⅲ-Ⅵ族量子点材料中的一种或多种；
    其中，所述量子点胶内的量子点材料为ZnCdSe2，CdSe，CdTe，CuInS2，ZnCuInS3中的一种或多种。
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