WO2017073662A1 - Optical semiconductor illumination device - Google Patents

Optical semiconductor illumination device Download PDF

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Publication number
WO2017073662A1
WO2017073662A1 PCT/JP2016/081876 JP2016081876W WO2017073662A1 WO 2017073662 A1 WO2017073662 A1 WO 2017073662A1 JP 2016081876 W JP2016081876 W JP 2016081876W WO 2017073662 A1 WO2017073662 A1 WO 2017073662A1
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WIPO (PCT)
Prior art keywords
optical semiconductor
semiconductor element
detector
lighting device
led
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PCT/JP2016/081876
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French (fr)
Japanese (ja)
Inventor
登 瀧澤
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ローム株式会社
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Publication of WO2017073662A1 publication Critical patent/WO2017073662A1/en

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V23/00—Arrangement of electric circuit elements in or on lighting devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
    • H05B47/10—Controlling the light source
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/40—Control techniques providing energy savings, e.g. smart controller or presence detection

Definitions

  • the present invention relates to an optical semiconductor lighting device using an optical semiconductor such as an LED (light emitting diode) or a laser diode.
  • an optical semiconductor such as an LED (light emitting diode) or a laser diode.
  • FIG. 18 is a diagram illustrating a configuration of the LED lighting device disclosed in Patent Document 1. As illustrated in FIG. 18 includes a plurality of LEDs 101a, 101b,..., A plurality of adjustable current sources 102a, 102b,..., A plurality of switching devices 103a, 103b,. 104, a measurement voltage source 105, and a control unit 106.
  • the switching device 102a corresponding to the LED 101a switches the electrical connection of the LED 102a from the current source 102a to the ammeter 104 and the measurement voltage source 105 when the LED 101a is a junction temperature detection target.
  • the forward voltage Vf of the LED 101a is fixed to the measurement voltage output from the measurement voltage source 105, and the control unit 106 determines from the current value detected by the ammeter 104.
  • the junction temperature of the LED 101a is detected. That is, the LED illumination device of FIG. 18 detects the junction temperature of the LED based on the forward voltage Vf of the LED.
  • optical semiconductors such as LEDs and laser diodes have photovoltaic power.
  • the photovoltaic power of optical semiconductors has increased with the increase in chip size and luminous efficiency, and there are optical semiconductor chips having a photovoltaic power of 1 [V] or more.
  • the LED illumination device of FIG. 18 detects the junction temperature of the LED based on the forward voltage Vf of the LED without considering the photovoltaic power, an error occurs in the detection of the junction temperature of the LED due to the photovoltaic power. Will occur.
  • a deviation of 20 ° C or more may occur.
  • the optical semiconductor When the photovoltaic power is large, a deviation of 20 ° C or more may occur.
  • the optical semiconductor When the photovoltaic power is large, a deviation of 20 ° C or more may occur.
  • the optical semiconductor When the optical semiconductor is used at a predetermined temperature close to the allowable limit value of the junction temperature, the optical semiconductor deteriorates exponentially, so that the lifetime may be very short due to an error in detecting the junction temperature. For example, a lifetime of about 10 ° C. may be halved.
  • an object of the present invention is to provide an optical semiconductor lighting device having a small junction temperature detection error.
  • an optical semiconductor lighting device includes an optical semiconductor element, at least one other optical semiconductor element, and a first voltage that detects a forward voltage of the optical semiconductor element.
  • a fourth detector for detecting each forward voltage in the dark of the other optical semiconductor element based on the difference between the result and the detection result of the second detector and the detection result of the third detector; and a second detector
  • a fifth detector for detecting a junction temperature of the optical semiconductor element from a detection result of the second detector
  • a sixth detector for detecting a junction temperature of the other optical semiconductor element from the detection result of the fourth detector.
  • the second detection unit includes a sensor that is disposed in the vicinity of the optical semiconductor element and outputs a predetermined physical quantity without being affected by external light, and the sensor It is also possible to adopt a configuration (second configuration) for detecting the forward voltage in the dark of the optical semiconductor element based on this detection result.
  • the senor is a diode sealed with a light-shielding substance, and the second detection unit is configured to transmit the optical semiconductor element based on a forward voltage of the diode.
  • the forward voltage in the dark may be detected (third configuration).
  • the senor is a thermistor
  • the second detection unit is based on the temperature detected by the thermistor in order of darkness of the optical semiconductor element.
  • a configuration for detecting a directional voltage may be used.
  • the second detection unit includes a movable light shielding mechanism capable of shielding external light incident on the optical semiconductor element, and external light incident on the optical semiconductor element. May be configured to detect a forward voltage in the dark of the optical semiconductor element (fifth configuration) while being shielded by the movable light shielding mechanism.
  • An optical semiconductor lighting device includes an optical semiconductor element, at least one other optical semiconductor element, a first detection unit that detects a forward current of the optical semiconductor element, and the optical semiconductor element.
  • a second detector for detecting forward current in the dark
  • a third detector for detecting forward currents of the other optical semiconductor elements, detection results of the first detector, and detection of the second detector Based on the difference between the results and the detection result of the third detector, a fourth detector for detecting each forward current in the dark of the other optical semiconductor elements, and the optical semiconductor element from the detection results of the second detector
  • a sixth detection unit for detecting each junction temperature of the other optical semiconductor element from the detection result of the fourth detection unit (sixth configuration). ing.
  • the optical semiconductor element and the other optical semiconductor elements according to a PWM signal whose on-duty ratio changes according to a dimming signal from the outside
  • a current adjusting unit that adjusts the current flowing through the PWM signal and a configuration (seventh configuration) in which at least the first detection unit and the third detection unit perform a detection operation during the off period of the PWM signal.
  • the optical semiconductor element and the other optical semiconductor elements are light emitting diodes or laser diodes (eighth configuration). Also good.
  • the optical semiconductor element includes an anode electrode, a cathode electrode, and a conductive heat dissipation pad, and one of the anode electrode and the cathode electrode
  • a configuration (a ninth configuration) in which the heat dissipating pad and one end of the sensor are electrically connected may be employed.
  • the optical semiconductor element includes an optical semiconductor chip, a heat conductive paste provided on the first surface of the optical semiconductor chip and the heat dissipation pad, and the optical semiconductor.
  • a P-type region formed on a second surface opposite to the first surface of the chip and a first connection member for electrically connecting the anode electrode; and formed on the second surface of the optical semiconductor chip.
  • a second connection member that electrically connects the N-type region and the cathode electrode may be used (a tenth configuration).
  • the heat dissipating pad is disposed between the anode electrode and the cathode electrode as viewed from the normal direction of the first surface and the second surface. You may make it a structure (11th structure).
  • the optical semiconductor lighting device having any one of the ninth to eleventh configurations further includes a substrate on which at least the optical semiconductor element and the sensor are mounted, and the cathode electrode and the heat dissipation pad are formed on the ground.
  • a configuration in which the sensor is electrically connected to one end of the sensor (a twelfth configuration) may be employed.
  • the optical semiconductor lighting device having any one of the ninth to eleventh configurations includes a substrate on which at least the optical semiconductor element and the sensor are mounted, and the anode electrode and the heat dissipation pad are formed on the substrate.
  • a configuration in which the sensor is electrically connected to one end of the sensor by a voltage supply pattern (a thirteenth configuration) may be employed.
  • the moving body according to the present invention has a configuration (fourteenth configuration) including the optical semiconductor illumination device having any one of the first to thirteenth configurations.
  • the outdoor lamp according to the present invention has a configuration (fifteenth configuration) including an optical semiconductor lighting device having the configuration according to any one of claims 1 to 13.
  • Schematic front view of the optical semiconductor lighting device of the first embodiment The figure which shows an example of the schematic longitudinal cross-section of LED Schematic top view showing an example of LED and diode electrode arrangement
  • the figure which shows the other example of the schematic longitudinal cross-section of LED The figure which shows the other example of the schematic longitudinal cross-section of LED
  • the figure which shows the other example of the schematic longitudinal cross-section of LED The flowchart which shows operation
  • movement of the optical semiconductor illuminating device of 3rd Embodiment The figure which shows the structure of the optical semiconductor illuminating device of 4th Embodiment.
  • FIG. 1 is a diagram illustrating a configuration of the optical semiconductor lighting device according to the first embodiment.
  • LEDs 1a to 1h includes LEDs 1a to 1h, variable current sources 2a to 2h, switches 3a to 3h, voltage detectors 4a to 4h, and constant current sources 5a to 5h.
  • the number of LEDs is eight, but the present invention is not limited to this, and the optical semiconductor lighting device may include a plurality of LEDs.
  • the switch 3a selects one of the variable current source 2a and the constant current source 5a, and electrically connects the selected current source and the anode of the LED 1a.
  • a DC driving voltage V D is supplied to the variable current source 2a and the constant current source 5a.
  • the cathode of the LED 1a is at ground potential.
  • Voltage detection unit 4a detects the forward voltage Vf of LED1a when the constant current I C that is output from the constant current source 5a is supplied to the LED1a.
  • the optical semiconductor lighting device shown in FIG. 1 further includes a diode 6, a voltage detection unit 7, a constant current source 8, and a control unit 9.
  • the diode 6 is a diode sealed with a light shielding material such as black resin.
  • a DC drive voltage V D is supplied to the constant current source 8.
  • the cathode of the diode 6 is connected to the constant current source 8.
  • the cathode of the diode 6 is at ground potential.
  • Voltage detector 7 detects the forward voltage Vf of the diode 6 when the constant current I C that is output from the constant current source 8 is supplied to the diode 6.
  • the control unit 9 controls the output currents of the variable current sources 2a to 2h based on the outputs of the voltage detection units 4a to 4h and 7.
  • control unit 9 also performs on / off control of the constant current sources 5a to 5h and 8.
  • the ON / OFF control for example provided with a changeover switch for switching between blocking and electrical connection between the constant current source 5a ⁇ 5h and 8 the supply line of the internal drive voltage V D, respectively, the control unit 9 the changeover switch It can be realized by controlling.
  • FIG. 2A is a schematic front view of the optical semiconductor lighting device of the first embodiment.
  • the diode 6 is disposed in the vicinity of the LED 1a. Thereby, the junction temperature of the diode 6 and the junction temperature of LED1a can be made substantially the same.
  • LEDs are arranged at intervals of 45 ° with respect to the center O of the front of the apparatus, but this arrangement is merely an example, and the present invention is not limited to the arrangement example shown in FIG. 2A.
  • the LED 1a in which the diode 6 is disposed in the vicinity has a conductive heat radiating pad, and the heat radiating pad of the LED 1a is electrically connected to the cathode electrode of the diode 6. This is because heat is transferred from the heat dissipation pad of the LED 1a to the cathode electrode of the diode 6 through this electrical connection, so that the difference between the junction temperature of the LED 1a and the junction temperature of the diode 6 can be reduced.
  • the LEDs 1b to 1h may have the same structure as the LED 1a or a different structure.
  • FIG. 2B is a diagram showing an example of a schematic longitudinal section of the LED 1a.
  • the LED 1a having the structure shown in FIG. 2B includes a translucent resin L0, an LED chip L1, an insulating substrate L2, bonding wires L3 and L4, and a heat conductive paste L5.
  • the insulating substrate L2 includes a front-side anode electrode L6, a front-side cathode electrode L7, a front-side heat dissipation pad L8, a back-side anode electrode L9, a back-side cathode electrode L10, a back-side heat dissipation pad L11, and through holes L12 to L14.
  • the front side anode electrode L6 and the back side anode electrode L9 are electrically connected by a through hole L12
  • the front side cathode electrode L7 and the back side cathode electrode L10 are electrically connected by a through hole L13, and the front side heat radiating pad L8 and the back side heat radiating pad.
  • L11 is electrically connected through a through hole L14.
  • the heat conductive paste L5 is provided between the back surface of the LED chip L1 and the front heat dissipation pad L8, and the heat generated in the LED chip L1 is transmitted to the front heat dissipation pad L8 via the heat conductive paste L5.
  • a silver paste or the like having high heat conductivity may be used as the heat conductive paste L5.
  • the P-type region formed on the surface of the LED chip L1 and the front-side anode electrode L6 are electrically connected by a bonding wire L3, and the N-type region formed on the surface of the LED chip L1 and the front-side cathode electrode L7 are connected to each other. It is electrically connected by a bonding wire L3.
  • the translucent resin L0 covers the LED chip L1, the surface of the insulating substrate L2, and the bonding wires L3 and L4.
  • FIG. 2C is a schematic top view showing an electrode arrangement example of the LED 1 a and the diode 6.
  • An anode electrode 61 and a cathode electrode 62 are formed on the back side of the diode 6.
  • a ground pattern 21 is formed on the front side of the mounting substrate 20 on which the diode 6 and the LED 1a having the structure shown in FIG. 2B are mounted.
  • the back side cathode electrode L10 and the back side heat radiation pad L11 of the LED 1a are electrically connected to the cathode electrode 62 of the diode 6 by the ground pattern 21.
  • the back side cathode electrode L10 and the back side heat radiation pad L11 of the LED 1a are electrically connected. Therefore, instead of the structure shown in FIG. 2B, a structure in which the back-side cathode electrode L10 and the back-side heat dissipating pad L11 are connected as shown in FIG. 2D may be used, and the front-side cathode electrode L7 and the front-side heat dissipating pad L8 are shown in FIG.
  • the backside cathode electrode L10 and the backside heat dissipation pad L11 are connected as shown in FIG. 2F, and the frontside cathode electrode L7 and the frontside heat dissipation pad L8 are connected.
  • FIG. 3 is a flowchart showing the operation of the optical semiconductor lighting device of the first embodiment.
  • the optical semiconductor lighting device of the first embodiment starts the operation of the flowchart shown in FIG. 3 as soon as the startup of the device is completed.
  • the control unit 9 controls each current source so that the constant current sources 5a and 8 are turned on and the other current sources are turned off (output current stop state), and the switch 3a is turned on.
  • the controller 9 controls the switch 3a so as to select the current source 5a.
  • the forward voltage Vf of the diode 6 at the time of the constant current I C is measured by the voltage detector 7, and the forward voltage Vf of the LED 1a at the time of the constant current I C is measured by the voltage detector 4a.
  • Step S10 The measurement result of the voltage detector 7 and the measurement result of the voltage detector 4a are stored in an internal memory (not shown) of the controller 9. Note that another data holding unit such as an internal register may be used instead of the internal memory.
  • the measurement result of the voltage detector 7 is not affected by external light. That is, the forward voltage Vf of the diode 6 at the constant current I C measured by the voltage detector 7 is equivalent to the forward voltage Vf_d of the diode 6 at the dark time at the constant current I C.
  • the measurement result of the voltage detector 4a is affected by the external light.
  • step S20 the control unit 9, the measurement results of the measurement result of the voltage detector 7 and the voltage detection unit 4a, for a forward voltage Vf_d during dark LED1a during the constant current I C, determined
  • the stored data is stored in a data holding unit such as an internal memory.
  • the forward voltage Vf_d during dark LED1a in forward voltage Vf_d a constant current I C at the time of dark diode 6 during the constant current I C is 1 at the same temperature conditions: when a 5 relationship Is obtained by multiplying the measurement result of the voltage detection unit 7 by 5 and subtracting it from the measurement result of the voltage detection unit 4a to obtain the photovoltaic power of the LED 1a, and subtracting the photovoltaic power of the LED 1a from the measurement result of the voltage detection unit 4a. .
  • the forward voltage Vf_d when the LED 1a is dark at the time of the constant current I C can be obtained.
  • the obtained data is stored in a data holding unit such as an internal memory.
  • step S40 following step S30 the control unit 9 controls the constant current source 5b and the variable current source 2b so that the constant current source 5b is turned on and the variable current source 2b is turned off (output current stopped state). At the same time, the control unit 9 controls the switch 3b so that the switch 3b selects the constant current source 5b. Under such a control state, the forward voltage Vf of the LED 1b at the time of the constant current I C is measured by the voltage detector 4b.
  • a switch 3a, 3c ⁇ 3h, the constant current source 5a, 5c ⁇ 2h, and the variable current source 2a the 2c ⁇ 2h state particularly It is not limited.
  • the switches 3a and 3c to 3h select the variable current sources 2a and 2c to 2h and the variable current sources 2a and 2c to 2h are turned on, the LEDs 1a, 1c to 1h at the constant current I C are obtained.
  • the forward voltage Vf_d in the dark is determined, the influence of the LEDs 1a and 1c to 1h incident on the LED 1b can be eliminated.
  • the LED 1b at the constant current I C by the voltage detector 4b is set. simultaneously with the measurement of the forward voltage Vf, it is possible to measure a forward voltage Vf of the LED 1b ⁇ 1h during the constant current I C by the voltage detection unit 4c ⁇ 4h.
  • step S40 the measurement of the forward voltage Vf of the LEDs 1c to 1h at the constant current I C by the voltage detectors 4c to 4h is the same as the measurement of the forward voltage Vf of the LED 1b at the constant current I C by the voltage detector 4b.
  • the measurement results of the voltage detection units 4b to 4h are stored in a data holding unit such as an internal memory of the control unit 9.
  • the forward voltage Vf_d in the dark of the LEDs 1b to 1h at the time C is obtained, and the obtained data is stored in a data holding unit such as an internal memory.
  • the forward voltage Vf_d when the LED 1b is dark at the time of the constant current I C can be obtained. Relationship in the same receiving conditions and photovoltaic LED1b in photovoltaic and constant current I C at the LED1a during the constant current I C is obtained theoretically from the properties of LED1a and 1b.
  • the LEDs 1c to 1h are the same as the LED 1b.
  • step S60 the controller 9 determines the forward voltage Vf_d of the LED 1a in the dark at the constant current I C obtained in step S20 and the darkness of the LEDs 1b to 1h in the constant current I C obtained in step S50.
  • the junction temperatures of the LEDs 1a to 1h are obtained from the forward voltage Vf_d at the time, and the obtained data is stored in a data holding unit such as an internal memory. Relationship between the forward voltage Vf_d and LED1a junction temperature during dark LED1a during the constant current I C is obtained theoretically from the characteristics of LED1a.
  • the LEDs 1b to 1h are the same as the LED 1a.
  • step S70 following step S60 the control unit 9 controls the output currents of the variable current sources 2a to 2h according to the junction temperatures of the LEDs 1a to 1h obtained in step S50.
  • junction temperature of the LED There is a negative correlation between the junction temperature of the LED and the forward voltage Vf of the LED, and the forward voltage Vf decreases as the junction temperature increases. For this reason, when the photovoltaic voltage is included in the forward voltage Vf, the junction temperature is detected lower than the true value. In the present embodiment, since the junction temperature is obtained from the forward voltage Vf_d in the dark as described above, it can be prevented or suppressed that the junction temperature is detected lower than the true value.
  • control in step S70 are not particularly limited.
  • the controller 9 controls the LEDs 1a to 1h so that the luminance of the LEDs falls within a desired range.
  • a control example in which each of the output currents of the variable current sources 2a to 2h is controlled in accordance with each of the junction temperatures can be considered. In this case, by preventing or suppressing the junction temperature from being detected lower than the true value, it is possible to prevent or suppress the luminance from becoming higher than the desired range, thereby reducing the power consumption of the LED. It becomes.
  • control unit 9 controls the output currents of the variable current sources 2a to 2h according to the junction temperatures of the LEDs 1a to 1h so that the junction temperature does not exceed an allowable value.
  • the control unit 9 controls the output currents of the variable current sources 2a to 2h according to the junction temperatures of the LEDs 1a to 1h so that the junction temperature does not exceed an allowable value.
  • a fan for air-cooling the LED is provided in the optical semiconductor lighting device, and the control unit 9 controls the fan on / off according to the junction temperature of the LEDs 1a to 1h obtained in step S50 as well as the control in step S70.
  • a control example for controlling the rotational speed control is also conceivable. In this case, by preventing or suppressing the junction temperature from being detected lower than the true value, excessive driving of the fan can be prevented or suppressed, and the power consumption of the fan can be reduced.
  • step S80 the controller 9 determines whether or not a predetermined time has elapsed since the junction temperatures of the LEDs 1a to 1h were finally obtained in step S70. In order to realize this determination, the control unit 9 has a time measuring function.
  • step S60 when it is determined in step S60 that the predetermined time has not elapsed since the junction temperatures of the LEDs 1a to 1h were obtained (NO in step S80), the process returns to step S70.
  • step S80 if it is determined that the predetermined time has elapsed since the junction temperatures of the LEDs 1a to 1h were finally obtained in step S60 (YES in step S80), the process returns to step S10.
  • the optical semiconductor lighting device of the first embodiment continuously executes the above-described series of operations until the power is turned off.
  • each process of step S20, S30, S50, S60 may be performed using the relational expression which the control part 9 has memorize
  • the LEDs 1a to h are divided into a plurality of groups (for example, the first group to which the LEDs 1a to 1c, 1g, and 1h belong and the LEDs 1d to h). It is also possible to adopt a configuration in which one diode 6 is provided in each group.
  • the LEDs 1a to h corresponding to the date and time zone A configuration may be adopted in which the difference value used in step S50 is corrected by grasping the correlation of the photovoltaic power in advance.
  • FIG. 4 is a diagram illustrating a configuration of the optical semiconductor lighting device of the second embodiment.
  • the optical semiconductor lighting device of the second embodiment is the same as that of the first embodiment in that the control unit 9 receives a dimming signal from the outside and adjusts the output currents of the variable current sources 2a to 2h according to the dimming signal. It is different from the optical semiconductor lighting device, and other parts are basically the same as those of the optical semiconductor lighting device of the first embodiment.
  • the controller 9 outputs a PWM signal whose on-duty ratio changes according to a dimming signal from the outside to the variable current sources 2a to 2h.
  • the PWM signal output from the control unit 9 to the variable current sources 2a to 2h may have the same waveform as the external dimming signal.
  • the on-duty ratio of the PWM signal output from the control unit 9 to the variable current sources 2a to 2h may be proportional to the voltage value of the DC voltage signal.
  • variable current sources 2a to 2h are turned on in the on period of the PWM signal supplied from the control unit 9, and are turned off (output) in the off period of the PWM signal supplied from the control unit 9. (Current stop state). Then, the control unit 9 executes at least the processes of step S10 and step S40 in the off period of the PWM signal supplied from the control unit 9 to the variable current sources 2a to 2h. As a result, the junction temperatures of the LEDs 1a to 1h can be obtained without impeding illumination by the LEDs 1a to 1h. Note that all the processes of steps S10 to S60 in FIG. 3 may be executed during the OFF period of the PWM signal.
  • FIG. 5 is a diagram illustrating a configuration of the optical semiconductor lighting device of the third embodiment.
  • the optical semiconductor lighting device of the third embodiment is different from the optical semiconductor lighting device of the first embodiment in that the diode 6 is replaced with the thermistor 10, and other parts are basically the same as those of the first embodiment. This is the same as the optical semiconductor lighting device.
  • FIG. 6 is a flowchart showing the operation of the optical semiconductor lighting device of the third embodiment.
  • the optical semiconductor lighting device of the third embodiment starts the operation of the flowchart shown in FIG. 6 as soon as the startup of the device is completed.
  • control unit 9 controls each current source so that the constant current sources 5a and 8 are turned on and the other current sources are turned off (output current stop state), and the switch 3a is turned on.
  • the controller 9 controls the switch 3a so as to select the current source 5a.
  • the temperature of the thermistor 10 is measured by the voltage detector 7, and the forward voltage Vf of the LED 1a at the time of the constant current I C is measured by the voltage detector 4a (step S11).
  • the measurement result (temperature measurement result) of the voltage detection unit 7 and the measurement result of the voltage detection unit 4a are stored in a data holding unit such as an internal memory.
  • the thermistor 10 is arranged in the vicinity of the LED 1a. Thereby, the temperature of the thermistor 10 and the junction temperature of LED1a can be made substantially the same. Therefore, the temperature of the thermistor 10 can be regarded as the junction temperature of the LED 1a. Since the resistance value of the thermistor 10 is not affected by external light, the measurement result of the voltage detector 7 is not affected by external light. On the other hand, when external light is incident on the LED 1a, the measurement result of the voltage detector 4a is affected by the external light.
  • step S21 the control unit 9 obtains the forward voltage Vf_d in the dark of the LED 1a at the time of the constant current I C from the measurement result of the voltage detection unit 7, and the obtained data is stored in the internal memory or the like. Store in the holding unit.
  • Step S31 to Step S81 are the same as Step S30 to Step S80 in FIG.
  • the optical semiconductor lighting device of the third embodiment continuously performs the operation shown in FIG. 6 until the power is turned off.
  • step S21 may be executed using a relational expression stored in advance by the control unit 9, or may be executed using a data table stored in advance by the control unit 9.
  • the optical semiconductor lighting device of the third embodiment also has the same effect as the optical semiconductor lighting device of the first and second embodiments.
  • FIG. 7 is a diagram illustrating the configuration of the optical semiconductor lighting device of the fourth embodiment.
  • the optical semiconductor lighting device of the fourth embodiment is different from the optical semiconductor lighting device of the first embodiment in that the diode 6, the voltage detection unit 7, and the constant current source 8 are replaced with the shutter driving unit 11 and the shutter 12.
  • the other parts are basically the same as those of the optical semiconductor lighting device of the first embodiment.
  • FIG. 8 is a flowchart showing the operation of the optical semiconductor lighting device of the fourth embodiment.
  • the optical semiconductor lighting device starts the operation of the flowchart shown in FIG. 8 immediately after the start-up of the device is completed.
  • control unit 9 controls each current source so that the constant current source 5a is turned on and the other current sources are turned off (output current stop state), and the switch 3a is connected to the constant current source.
  • the control unit 9 controls the switch 3a so as to select 5a.
  • control unit 9 controls the shutter drive unit 12 so that the shutter drive unit 12 does not drive the shutter 11.
  • the forward voltage Vf of the LED 1a at the time of the constant current I C is measured by the voltage detector 4a (step S12).
  • Measurement results of the voltage detection unit 4a as the data of the forward voltage Vf_d of LED1a during the constant current I C, is stored in the data holding unit, such as an internal memory.
  • step S22 the controller 9 controls the shutter driver 12 so that the shutter driver 12 drives the shutter 11.
  • the forward voltage Vf_d in the dark state of the LED 1a at the constant current I C is measured by the voltage detection unit 4a (step S22).
  • step S22 the control unit 9 controls the shutter drive unit 12 so that the shutter drive unit 12 does not drive the shutter 11.
  • the outside light incident on the LED 1a returns to the state where it is not shielded by the shutter 11.
  • the obtained data is stored in a data holding unit such as an internal memory.
  • steps S42 to S82 are the same as steps S40 to S80 in FIG. 3, description thereof is omitted here.
  • the optical semiconductor lighting device of the fourth embodiment continuously performs the operation shown in FIG. 8 until the power is turned off.
  • the optical semiconductor lighting device of the fourth embodiment also has the same effects as the optical semiconductor lighting device of the first to third embodiments.
  • a light shielding shade used in an AFS adaptive front-lighting system
  • AFS adaptive front-lighting system
  • FIG. 9 is a diagram illustrating the configuration of the optical semiconductor lighting device of the fifth embodiment.
  • the voltage detectors 4a to 4h and the constant current sources 5a to 5h are replaced with the current detectors 13a to 13h and the constant voltage sources 14a to 14h, and the voltage detector 7 and the constant current source 8 are replaced. It differs from the optical semiconductor lighting device of the first embodiment in that the current detection unit 15 and the constant voltage source 16 are replaced, and other parts are basically the same as those of the optical semiconductor lighting device of the first embodiment. .
  • FIG. 10 is a flowchart showing the operation of the optical semiconductor lighting device of the fifth embodiment.
  • the optical semiconductor lighting device of the fifth embodiment starts the operation of the flowchart shown in FIG. 10 immediately after the start of the device is completed.
  • control unit 9 controls the variable current sources 2a to 2h so that the variable current sources 2a to 2h are turned off (output current stop state), and the switch 3a selects the constant voltage source 14a.
  • the control unit 9 controls the switch 3a. Under such a control state, the forward current If of the diode 6 is measured by the current detector 15, and the forward current If of the LED 1a at the constant current I C is measured by the current detector 13a (step S13). .
  • the measurement result of the current detection unit 15 and the measurement result of the current detection unit 13a are stored in a data holding unit such as an internal memory.
  • step S23 following step S13 the control unit 9 obtains the forward current If_d in the dark of the LED 1a from the measurement result of the current detection unit 15 and the measurement result of the current detection unit 13a, and stores the obtained data in an internal memory or the like. Stored in the data holding unit.
  • step S33 following step S23 the control unit 9 obtains a difference between the measurement result of the current detection unit 13a and the forward current If_d of the LED 1a in the dark, and stores the obtained data in a data holding unit such as an internal memory. To do.
  • step S43 the control unit 9 controls the variable current source 2b so that the variable current source 2b is turned off (output current stop state), and the switch 3b selects the constant voltage source 14b.
  • the controller 9 controls the switch 3b. Under such a control state, the forward current If of the LED 1b is measured by the current detector 13b.
  • step S43 the measurement of the forward current If of the LEDs 1c to 1h by the current detection units 13c to 13h is performed in the same manner as the measurement of the forward current If of the LED 1b by the current detection unit 13b.
  • the measurement results of the current detection units 13b to 13h are stored in a data holding unit such as an internal memory of the control unit 9.
  • step S53 following step S43 the control unit 9 determines the forward current If_d in the dark of the LEDs 1b to 1h from the difference value between the LED 1a obtained in step S33 and the measurement result of the current detection units 13b to 13h obtained in step S43. And the obtained data is stored in a data holding unit such as an internal memory.
  • step S63 following step S53 the control unit 9 determines the LED 1a to 1h based on the dark forward current If_d of the LED 1a obtained in step S23 and the dark forward current If_d of the LEDs 1b to 1h obtained in step S53.
  • the junction temperature is obtained, and the obtained data is stored in a data holding unit such as an internal memory.
  • steps S73 to S83 are the same as steps S70 to S80 in FIG. 3, the description thereof is omitted here.
  • the optical semiconductor lighting device of the fifth embodiment continuously performs the operation shown in FIG. 10 until the power is turned off.
  • the optical semiconductor lighting device of the fifth embodiment also has the same effects as the optical semiconductor lighting devices of the first to fourth embodiments.
  • the configuration of the voltage detection unit can be simplified compared to the current detection unit, the optical semiconductor illumination devices of the first to fourth embodiments are preferable to the optical semiconductor illumination device of the fifth embodiment.
  • the optical semiconductor lighting device of each embodiment described above includes a headlight (including high beam / low beam / small lamp / fog lamp, etc.) X11 of the vehicle X10, daylight / night driving (DRL). ) Light source X12, tail lamp (including small lamp and back lamp as appropriate) X13, stop lamp X14, and turn lamp X15.
  • the daylight / nighttime (DRL) light source X12 has a longer time to be affected by external light than other lamps, and therefore, the application of the present invention is more preferable than other lamps.
  • optical semiconductor lighting devices of the above-described embodiments are provided as modules (LED headlight module Y10 in FIG. 13, LED turn lamp module Y20 in FIG. 14, LED rear lamp module Y30 in FIG. 15, etc.).
  • it may be provided as a single IC that is a semi-finished product excluding the LEDs 1a to 1h and external components such as external capacitors used as part of the current source and voltage source.
  • optical semiconductor illuminating device of each above-mentioned embodiment may be used as a lamp provided in moving bodies other than a vehicle.
  • the optical semiconductor lighting devices of the above-described embodiments may be used as lamps provided at both ends of the main wing of an aircraft.
  • the optical semiconductor lighting devices of the above-described embodiments may be used as the lamps Z11 to Z13 provided in the traffic light Z10 shown in FIG.
  • an LED is used as the optical semiconductor element, but an optical semiconductor element other than the LED (for example, a laser diode) may be used.
  • the value of the output current of each constant current source is the same, but the present invention is not limited to this.
  • the correlation between the output current value of the constant current source 8 and the output current value of another constant current source is grasped in advance, and the forward voltage Vf of the LED is determined. What is necessary is just to reflect the correlation when calculating
  • the output voltage value of each constant voltage source is the same, but the present invention is not limited to this.
  • the correlation between the output voltage value of the constant voltage source 16 and the output voltage value of the other constant voltage source is grasped in advance, and the forward current If of the LED is calculated. What is necessary is just to reflect the correlation when calculating
  • the characteristics of each LED are the same, but the present invention is not limited to this.
  • the correlation between the characteristics of the LED 1a and the characteristics of the other LEDs is grasped in advance, and the LED forward voltage Vf, the LED forward current If, and the LED junction temperature are obtained. What is necessary is just to reflect a correlation.
  • the current source is arranged on the supply line side of the drive voltage V D, it has been disposed an LED on the ground side, the present invention is not limited thereto.
  • the LED is disposed on the supply line side of the drive voltage V D, it may be arranged a current source to the ground side.
  • the LED is arranged on the supply line side of the drive voltage V D, when subjected to deformation to place the current source to the ground, as shown in FIG. 17A It becomes a composition.
  • the diode 6 is disposed in the vicinity of the LED 1a.
  • the LED 1a in which the diode 6 is disposed in the vicinity has a conductive heat dissipation pad, and the heat dissipation pad of the LED 1a is preferably electrically connected to the cathode electrode of the diode 6.
  • FIG. 17B is a schematic top view showing an electrode arrangement example of the LED 1a and the diode 6 in the optical semiconductor lighting device shown in FIG. 17A.
  • An anode electrode 61 and a cathode electrode 62 are formed on the back side of the diode 6.
  • a driving voltage supply pattern 22 is formed on the front side of the mounting substrate 20 on which the diode 6 and the LED 1a having the structure shown in FIG. 2B are mounted.
  • the driving voltage supply pattern 22 it is preferable to use a copper foil or the like having a small electric resistance.
  • the back side anode electrode L9 and the back side heat radiation pad L11 of the LED 1a are electrically connected to the anode electrode 61 of the diode 6 by the drive voltage supply pattern 22.
  • the back side anode electrode L9 of the LED 1a and the back side heat radiation pad L11 are electrically connected. Therefore, instead of the structure shown in FIG. 2B, a structure in which the back-side anode electrode L9 and the back-side heat dissipating pad L11 are connected as shown in FIG. 17C may be used, and a front-side anode electrode L6 and a front-side heat dissipating pad L8 are shown in FIG.
  • the back side anode electrode L9 and the back side heat radiation pad L11 may be connected, and the front side anode electrode L6 and the front side heat dissipation pad L8 may be connected as shown in FIG. 17E.
  • the present invention can be applied to, for example, an optical semiconductor illumination device used in various lamps, outdoor lights, and the like of mobile objects.
  • Control unit 10 Thermistor 11 Shutter drive unit 12 Shutter 13a to 13h, 15 Current detection unit 14a to 14h, 16 constant voltage source 20 mounting board 21 ground pattern 22 drive voltage supply pattern X10 vehicle X11 headlight X12 light source for day / night driving (DRL) X13 tail lamp X14 stop lamp X15 turn lamp Y10 LED headlight module Y20 LED turn lamp module Y30 LED rear lamp module Z10 Traffic light Z11 to Z13 Lamp

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Abstract

An optical semiconductor illumination device, having an optical semiconductor element, at least one other optical semiconductor element, and first to fifth detectors. The first detector detects the forward voltage of the optical semiconductor element. The second detector detects the forward voltage of the optical semiconductor element when dark. The third detector detects the respective forward voltages of the other optical semiconductor elements. The fourth detector detects the respective forward voltages of the other optical semiconductor elements when dark, on the basis of the difference between the detection result from the first detector and the detection result from the second detector, and on the basis of the detection result from the third detector. The fifth detector detects the junction temperature of the optical semiconductor element from the detection result from the second detector. The sixth detector detects the respective junction temperatures of the other optical semiconductor elements from the detection result from the fourth detector.

Description

光半導体照明装置Optical semiconductor lighting device
　本発明は、ＬＥＤ（light　emitting　diode）やレーザーダイオードのような光半導体を用いる光半導体照明装置に関する。 The present invention relates to an optical semiconductor lighting device using an optical semiconductor such as an LED (light emitting diode) or a laser diode.
　従来の光半導体照明装置の一例として、特許文献１に開示されているＬＥＤ照明装置を挙げることができる。図１８は、特許文献１に開示されているＬＥＤ照明装置の構成を示す図である。図１８のＬＥＤ照明装置は、複数のＬＥＤ１０１ａ、１０１ｂ、・・・と、複数の調整可能な電流源１０２ａ、１０２ｂ、・・・と、複数の切り替え装置１０３ａ、１０３ｂ、・・・と、電流計１０４と、測定電圧源１０５と、制御部１０６とを備えている。 As an example of a conventional optical semiconductor lighting device, an LED lighting device disclosed in Patent Document 1 can be cited. FIG. 18 is a diagram illustrating a configuration of the LED lighting device disclosed in Patent Document 1. As illustrated in FIG. 18 includes a plurality of LEDs 101a, 101b,..., A plurality of adjustable current sources 102a, 102b,..., A plurality of switching devices 103a, 103b,. 104, a measurement voltage source 105, and a control unit 106.
　ＬＥＤ１０１ａに対応する切り替え装置１０２ａは、ＬＥＤ１０１ａがジャンクション温度検出のターゲットであるときに、ＬＥＤ１０２ａの電気的接続を電流源１０２ａから電流計１０４及び測定電圧源１０５へ切り替える。これにより、ＬＥＤ１０１ａがジャンクション温度検出のターゲットであるときに、ＬＥＤ１０１ａの順方向電圧Ｖｆを測定電圧源１０５から出力される測定電圧に固定し、制御部１０６が電流計１０４で検出される電流値からＬＥＤ１０１ａのジャンクション温度を検出している。つまり、図１８のＬＥＤ照明装置は、ＬＥＤの順方向電圧Ｖｆを基にＬＥＤのジャンクション温度を検出している。 The switching device 102a corresponding to the LED 101a switches the electrical connection of the LED 102a from the current source 102a to the ammeter 104 and the measurement voltage source 105 when the LED 101a is a junction temperature detection target. Thus, when the LED 101a is a junction temperature detection target, the forward voltage Vf of the LED 101a is fixed to the measurement voltage output from the measurement voltage source 105, and the control unit 106 determines from the current value detected by the ammeter 104. The junction temperature of the LED 101a is detected. That is, the LED illumination device of FIG. 18 detects the junction temperature of the LED based on the forward voltage Vf of the LED.
特許第５１０２０３７号公報Japanese Patent No. 5102037
　しかしながら、ＬＥＤやレーザーダイオードのような光半導体は光起電力を有している。近年チップサイズの増大や発光効率の増大に伴って光半導体の光起電力は大きくなっており、１［Ｖ］以上の光起電力を有する光半導体チップも存在する。 However, optical semiconductors such as LEDs and laser diodes have photovoltaic power. In recent years, the photovoltaic power of optical semiconductors has increased with the increase in chip size and luminous efficiency, and there are optical semiconductor chips having a photovoltaic power of 1 [V] or more.
　図１８のＬＥＤ照明装置は、光起電力を考慮せずにＬＥＤの順方向電圧Ｖｆを基にＬＥＤのジャンクション温度を検出しているため、光起電力に起因してＬＥＤのジャンクション温度検出に誤差が生じることになる。 Since the LED illumination device of FIG. 18 detects the junction temperature of the LED based on the forward voltage Vf of the LED without considering the photovoltaic power, an error occurs in the detection of the junction temperature of the LED due to the photovoltaic power. Will occur.
　光起電力が大きい場合には、２０℃以上のずれが発生することも有る。ジャンクション温度の許容限界値に近い所定温度以上で使用した場合、光半導体は指数関数的に劣化するので、ジャンクション温度検出の誤差によって寿命が非常に短くなる場合がある。例えば、１０℃程度のずれで寿命が半減してしまうこともある。 When the photovoltaic power is large, a deviation of 20 ° C or more may occur. When the optical semiconductor is used at a predetermined temperature close to the allowable limit value of the junction temperature, the optical semiconductor deteriorates exponentially, so that the lifetime may be very short due to an error in detecting the junction temperature. For example, a lifetime of about 10 ° C. may be halved.
　本発明は、上記の状況に鑑み、ジャンクション温度の検出誤差が小さい光半導体照明装置を提供することを目的とする。 In view of the above situation, an object of the present invention is to provide an optical semiconductor lighting device having a small junction temperature detection error.
　上記目的を達成するために、本発明の一の態様に係る光半導体照明装置は、光半導体素子と、少なくとも一つの他の光半導体素子と、前記光半導体素子の順方向電圧を検出する第１検出部と、前記光半導体素子の暗黒時の順方向電圧を検出する第２検出部と、前記他の光半導体素子の順方向電圧それぞれを検出する第３検出部と、第１検出部の検出結果と第２検出部の検出結果の差分及び第３検出部の検出結果に基づいて、前記他の光半導体素子の暗黒時の順方向電圧それぞれを検出する第４検出部と、第２検出部の検出結果から前記光半導体素子のジャンクション温度を検出する第５検出部と、第４検出部の検出結果から前記他の光半導体素子のジャンクション温度それぞれを検出する第６検出部と、を有する構成（第１の構成）とされている。 To achieve the above object, an optical semiconductor lighting device according to an aspect of the present invention includes an optical semiconductor element, at least one other optical semiconductor element, and a first voltage that detects a forward voltage of the optical semiconductor element. A detection unit; a second detection unit that detects a forward voltage in the dark of the optical semiconductor element; a third detection unit that detects each of the forward voltages of the other optical semiconductor elements; and a detection of the first detection unit. A fourth detector for detecting each forward voltage in the dark of the other optical semiconductor element based on the difference between the result and the detection result of the second detector and the detection result of the third detector; and a second detector A fifth detector for detecting a junction temperature of the optical semiconductor element from a detection result of the second detector, and a sixth detector for detecting a junction temperature of the other optical semiconductor element from the detection result of the fourth detector. (First configuration) There.
　また、上記第１の構成から成る光半導体照明装置において、第２検出部は、前記光半導体素子の近傍に配置され外光の影響を受けずに所定の物理量を出力するセンサを含み、前記センサの検出結果に基づいて前記光半導体素子の暗黒時の順方向電圧を検出する構成（第２の構成）にしても良い。 In the optical semiconductor lighting device having the first configuration, the second detection unit includes a sensor that is disposed in the vicinity of the optical semiconductor element and outputs a predetermined physical quantity without being affected by external light, and the sensor It is also possible to adopt a configuration (second configuration) for detecting the forward voltage in the dark of the optical semiconductor element based on this detection result.
　また、上記第２の構成から成る光半導体照明装置において、前記センサは、遮光性物質で封止されたダイオードであり、第２検出部は、前記ダイオードの順方向電圧に基づいて前記光半導体素子の暗黒時の順方向電圧を検出する構成（第３の構成）にしても良い。 In the optical semiconductor lighting device having the second configuration, the sensor is a diode sealed with a light-shielding substance, and the second detection unit is configured to transmit the optical semiconductor element based on a forward voltage of the diode. Alternatively, the forward voltage in the dark may be detected (third configuration).
　また、上記第２の構成から成る光半導体照明装置において、前記センサは、サーミスターであり、第２検出部は、前記サーミスターによって検出された温度に基づいて前記光半導体素子の暗黒時の順方向電圧を検出する構成（第４の構成）にしても良い。 Further, in the optical semiconductor lighting device having the second configuration, the sensor is a thermistor, and the second detection unit is based on the temperature detected by the thermistor in order of darkness of the optical semiconductor element. A configuration for detecting a directional voltage (fourth configuration) may be used.
　また、上記第１の構成から成る光半導体照明装置において、第２検出部は、前記光半導体素子に入射する外光を遮光可能な可動式遮光機構を含み、前記光半導体素子に入射する外光を前記可動式遮光機構によって遮光した状態で前記光半導体素子の暗黒時の順方向電圧を検出する構成（第５の構成）にしても良い。 Further, in the optical semiconductor lighting device having the first configuration, the second detection unit includes a movable light shielding mechanism capable of shielding external light incident on the optical semiconductor element, and external light incident on the optical semiconductor element. May be configured to detect a forward voltage in the dark of the optical semiconductor element (fifth configuration) while being shielded by the movable light shielding mechanism.
　本発明の他の態様に係る光半導体照明装置は、光半導体素子と、少なくとも一つの他の光半導体素子と、前記光半導体素子の順方向電流を検出する第１検出部と、前記光半導体素子の暗黒時の順方向電流を検出する第２検出部と、前記他の光半導体素子の順方向電流それぞれを検出する第３検出部と、第１検出部の検出結果と第２検出部の検出結果の差分及び第３検出部の検出結果に基づいて、前記他の光半導体素子の暗黒時の順方向電流それぞれを検出する第４検出部と、第２検出部の検出結果から前記光半導体素子のジャンクション温度を検出する第５検出部と、第４検出部の検出結果から前記他の光半導体素子のジャンクション温度それぞれを検出する第６検出部と、を有する構成（第６の構成）とされている。 An optical semiconductor lighting device according to another aspect of the present invention includes an optical semiconductor element, at least one other optical semiconductor element, a first detection unit that detects a forward current of the optical semiconductor element, and the optical semiconductor element. A second detector for detecting forward current in the dark, a third detector for detecting forward currents of the other optical semiconductor elements, detection results of the first detector, and detection of the second detector Based on the difference between the results and the detection result of the third detector, a fourth detector for detecting each forward current in the dark of the other optical semiconductor elements, and the optical semiconductor element from the detection results of the second detector And a sixth detection unit for detecting each junction temperature of the other optical semiconductor element from the detection result of the fourth detection unit (sixth configuration). ing.
　また、上記第１～６いずれかの構成から成る光半導体照明装置において、外部からの調光信号に応じてオンデューティ比が変化するＰＷＭ信号に応じて前記光半導体素子及び前記他の光半導体素子に流れる電流を調整する電流調整部を備え、前記ＰＷＭ信号のオフ期間において、少なくとも第１検出部及び第３検出部が検出動作を行う構成（第７の構成）にしても良い。 Further, in the optical semiconductor lighting device having any one of the first to sixth configurations, the optical semiconductor element and the other optical semiconductor elements according to a PWM signal whose on-duty ratio changes according to a dimming signal from the outside A current adjusting unit that adjusts the current flowing through the PWM signal, and a configuration (seventh configuration) in which at least the first detection unit and the third detection unit perform a detection operation during the off period of the PWM signal.
　また、上記第１～７いずれかの構成から成る光半導体照明装置において、前記光半導体素子及び前記他の光半導体素子は、発光ダイオード、または、レーザーダイオードである構成（第８の構成）にしても良い。 In the optical semiconductor lighting device having any one of the first to seventh configurations, the optical semiconductor element and the other optical semiconductor elements are light emitting diodes or laser diodes (eighth configuration). Also good.
　また、上記第８の構成から成る光半導体照明装置において、前記光半導体素子は、アノード電極、カソード電極、及び導電性の放熱パッドを有し、前記アノード電極及び前記カソード電極のいずれか一方と前記放熱パッドと前記センサの一端が電気的に接続されている構成（第９の構成）にしても良い。 In the optical semiconductor lighting device having the eighth configuration, the optical semiconductor element includes an anode electrode, a cathode electrode, and a conductive heat dissipation pad, and one of the anode electrode and the cathode electrode A configuration (a ninth configuration) in which the heat dissipating pad and one end of the sensor are electrically connected may be employed.
　また、上記第９の構成から成る光半導体照明装置において、前記光半導体素子は、光半導体チップと、前記光半導体チップの第１面と前記放熱パッドとに設けられる熱伝導ペーストと、前記光半導体チップの前記第１面に対向する第２面に形成されているＰ型領域と前記アノード電極とを電気的に接続する第１接続部材と、前記光半導体チップの前記第２面に形成されているＮ型領域と前記カソード電極とを電気的に接続する第２接続部材と、を有する構成（第１０の構成）にしても良い。 In the optical semiconductor lighting device having the ninth configuration, the optical semiconductor element includes an optical semiconductor chip, a heat conductive paste provided on the first surface of the optical semiconductor chip and the heat dissipation pad, and the optical semiconductor. A P-type region formed on a second surface opposite to the first surface of the chip and a first connection member for electrically connecting the anode electrode; and formed on the second surface of the optical semiconductor chip. A second connection member that electrically connects the N-type region and the cathode electrode may be used (a tenth configuration).
　また、上記第１０の構成から成る光半導体照明装置において、前記放熱パッドは、前記第１面及び前記第２面の法線方向から視て前記アノード電極と前記カソード電極との間に配置される構成（第１１の構成）にしても良い。 In the optical semiconductor lighting device having the tenth configuration, the heat dissipating pad is disposed between the anode electrode and the cathode electrode as viewed from the normal direction of the first surface and the second surface. You may make it a structure (11th structure).
　また、上記第９～１１いずれかの構成から成る光半導体照明装置において、少なくとも前記光半導体素子及び前記センサを実装する基板を有し、前記カソード電極及び前記放熱パッドが前記基板に形成されるグランドパターンによって前記センサの一端と電気的に接続されている構成（第１２の構成）にしても良い。 The optical semiconductor lighting device having any one of the ninth to eleventh configurations further includes a substrate on which at least the optical semiconductor element and the sensor are mounted, and the cathode electrode and the heat dissipation pad are formed on the ground. A configuration in which the sensor is electrically connected to one end of the sensor (a twelfth configuration) may be employed.
　また、上記第９～１１いずれかの構成から成る光半導体照明装置において、少なくとも前記光半導体素子及び前記センサを実装する基板を有し、前記アノード電極及び前記放熱パッドが前記基板に形成される駆動電圧供給用パターンによって前記センサの一端と電気的に接続されている構成（第１３の構成）にしても良い。 The optical semiconductor lighting device having any one of the ninth to eleventh configurations includes a substrate on which at least the optical semiconductor element and the sensor are mounted, and the anode electrode and the heat dissipation pad are formed on the substrate. A configuration in which the sensor is electrically connected to one end of the sensor by a voltage supply pattern (a thirteenth configuration) may be employed.
　本発明に係る移動体は、上記第１～１３いずれかの構成から成る光半導体照明装置を備える構成（第１４の構成）とされている。 The moving body according to the present invention has a configuration (fourteenth configuration) including the optical semiconductor illumination device having any one of the first to thirteenth configurations.
　本発明に係る屋外灯は、請求項１～１３いずれかの構成から成る光半導体照明装置を備える構成（第１５の構成）とされている。 The outdoor lamp according to the present invention has a configuration (fifteenth configuration) including an optical semiconductor lighting device having the configuration according to any one of claims 1 to 13.
　本発明によれば、測定温度の誤差が小さい光半導体照明装置を提供することができる。 According to the present invention, it is possible to provide an optical semiconductor lighting device with a small measurement temperature error.
第１実施形態の光半導体照明装置の構成を示す図The figure which shows the structure of the optical semiconductor illuminating device of 1st Embodiment. 第１実施形態の光半導体照明装置の概略正面図Schematic front view of the optical semiconductor lighting device of the first embodiment ＬＥＤの概略縦断面の一例を示す図The figure which shows an example of the schematic longitudinal cross-section of LED ＬＥＤとダイオードの電極配置例を示す概略上面図Schematic top view showing an example of LED and diode electrode arrangement ＬＥＤの概略縦断面の他の例を示す図The figure which shows the other example of the schematic longitudinal cross-section of LED ＬＥＤの概略縦断面の他の例を示す図The figure which shows the other example of the schematic longitudinal cross-section of LED ＬＥＤの概略縦断面の他の例を示す図The figure which shows the other example of the schematic longitudinal cross-section of LED 第１実施形態の光半導体照明装置の動作を示すフローチャートThe flowchart which shows operation | movement of the optical semiconductor illuminating device of 1st Embodiment. 第２実施形態の光半導体照明装置の構成を示す図The figure which shows the structure of the optical semiconductor illuminating device of 2nd Embodiment. 第３実施形態の光半導体照明装置の構成を示す図The figure which shows the structure of the optical semiconductor illuminating device of 3rd Embodiment. 第３実施形態の光半導体照明装置の動作を示すフローチャートThe flowchart which shows operation | movement of the optical semiconductor illuminating device of 3rd Embodiment. 第４実施形態の光半導体照明装置の構成を示す図The figure which shows the structure of the optical semiconductor illuminating device of 4th Embodiment. 第４実施形態の光半導体照明装置の動作を示すフローチャートThe flowchart which shows operation | movement of the optical semiconductor illuminating device of 4th Embodiment. 第５実施形態の光半導体照明装置の構成を示す図The figure which shows the structure of the optical semiconductor illuminating device of 5th Embodiment. 第５実施形態の光半導体照明装置の動作を示すフローチャートThe flowchart which shows operation | movement of the optical semiconductor illuminating device of 5th Embodiment. 光半導体照明装置が搭載される車両の外観図（前面）External view of vehicle equipped with optical semiconductor lighting device (front) 光半導体照明装置が搭載される車両の外観図（背面）External view of vehicle equipped with optical semiconductor lighting device (back) ＬＥＤヘッドライトモジュールの外観図External view of LED headlight module ＬＥＤターンランプモジュールの外観図External view of LED turn lamp module ＬＥＤリアランプモジュールの外観図External view of LED rear lamp module 光半導体照明装置が搭載される信号機の外観図External view of a traffic light equipped with an optical semiconductor lighting device 第１実施形態の光半導体照明装置の変形例を示す図The figure which shows the modification of the optical semiconductor illuminating device of 1st Embodiment. ＬＥＤとダイオードの電極配置例を示す上面図Top view showing an example of LED and diode electrode arrangement ＬＥＤの概略縦断面の他の例を示す図The figure which shows the other example of the schematic longitudinal cross-section of LED ＬＥＤの概略縦断面の他の例を示す図The figure which shows the other example of the schematic longitudinal cross-section of LED ＬＥＤの概略縦断面の他の例を示す図The figure which shows the other example of the schematic longitudinal cross-section of LED 特許文献１に開示されているＬＥＤ照明装置の構成を示す図The figure which shows the structure of the LED lighting apparatus currently disclosed by patent document 1
＜第１実施形態＞
　図１は、第１実施形態の光半導体照明装置の構成を示す図である。 <First Embodiment>
FIG. 1 is a diagram illustrating a configuration of the optical semiconductor lighting device according to the first embodiment.
　図１に示す光半導体照明装置は、ＬＥＤ１ａ～１ｈと、可変電流源２ａ～２ｈと、スイッチ３ａ～３ｈと、電圧検出部４ａ～４ｈと、定電流源５ａ～５ｈと、を備える。本実施形態ではＬＥＤの個数は８個であるが本発明はこれに限定されることは無く、光半導体照明装置がＬＥＤを複数備えていればよい。 1 includes LEDs 1a to 1h, variable current sources 2a to 2h, switches 3a to 3h, voltage detectors 4a to 4h, and constant current sources 5a to 5h. In the present embodiment, the number of LEDs is eight, but the present invention is not limited to this, and the optical semiconductor lighting device may include a plurality of LEDs.
　ＬＥＤと他の部品との関係は全てのＬＥＤで同じであるため、ここではＬＥＤ１ａを例に挙げて説明する。スイッチ３ａは、可変電流源２ａ及び定電流源５ａのいずれか一方を選択し、選択した電流源とＬＥＤ１ａのアノードとを電気的に接続する。可変電流源２ａ及び定電流源５ａには直流の駆動電圧ＶＤが供給される。ＬＥＤ１ａのカソードはグランド電位となっている。電圧検出部４ａは、定電流源５ａから出力される定電流ＩＣがＬＥＤ１ａに供給されているときのＬＥＤ１ａの順方向電圧Ｖｆを検出する。 Since the relationship between the LED and other components is the same for all LEDs, the LED 1a will be described as an example here. The switch 3a selects one of the variable current source 2a and the constant current source 5a, and electrically connects the selected current source and the anode of the LED 1a. A DC driving voltage V D is supplied to the variable current source 2a and the constant current source 5a. The cathode of the LED 1a is at ground potential. Voltage detection unit 4a detects the forward voltage Vf of LED1a when the constant current I C that is output from the constant current source 5a is supplied to the LED1a.
　図１に示す光半導体照明装置は、ダイオード６と、電圧検出部７と、定電流源８と、制御部９と、をさらに備える。ダイオード６は、例えば黒色樹脂などの遮光性物質で封止されたダイオードである。定電流源８には直流の駆動電圧ＶＤが供給される。ダイオード６のカソードは定電流源８に接続される。ダイオード６のカソードはグランド電位となっている。電圧検出部７は、定電流源８から出力される定電流ＩＣがダイオード６に供給されているときのダイオード６の順方向電圧Ｖｆを検出する。制御部９は、電圧検出部４ａ～４ｈ及び７の各出力に基づいて可変電流源２ａ～２ｈの各出力電流を制御する。制御部９の制御内容の詳細については後述する。なお、図１においては制御線の図示を省略しているが、制御部９は、定電流源５ａ～５ｈ及び８のオン／オフ制御も行う。このオン／オフ制御は、例えば定電流源５ａ～５ｈ及び８それぞれの内部に駆動電圧ＶＤの供給ラインとの電気的接続と遮断とを切り替える切替スイッチを設け、制御部９が当該切替スイッチを制御することによって実現することができる。 The optical semiconductor lighting device shown in FIG. 1 further includes a diode 6, a voltage detection unit 7, a constant current source 8, and a control unit 9. The diode 6 is a diode sealed with a light shielding material such as black resin. A DC drive voltage V D is supplied to the constant current source 8. The cathode of the diode 6 is connected to the constant current source 8. The cathode of the diode 6 is at ground potential. Voltage detector 7 detects the forward voltage Vf of the diode 6 when the constant current I C that is output from the constant current source 8 is supplied to the diode 6. The control unit 9 controls the output currents of the variable current sources 2a to 2h based on the outputs of the voltage detection units 4a to 4h and 7. Details of the control contents of the control unit 9 will be described later. Although the control lines are not shown in FIG. 1, the control unit 9 also performs on / off control of the constant current sources 5a to 5h and 8. The ON / OFF control, for example provided with a changeover switch for switching between blocking and electrical connection between the constant current source 5a ~ 5h and 8 the supply line of the internal drive voltage V D, respectively, the control unit 9 the changeover switch It can be realized by controlling.
　図２Ａは、第１実施形態の光半導体照明装置の概略正面図である。 FIG. 2A is a schematic front view of the optical semiconductor lighting device of the first embodiment.
　ダイオード６はＬＥＤ１ａの近傍に配置されている。これにより、ダイオード６のジャンクション温度とＬＥＤ１ａのジャンクション温度を略同一にすることができる。なお、図２Ａでは装置正面の中心Ｏに対して４５°おきにＬＥＤが配置されているが、この配置はあくまで一例であり、本発明は図２Ａに示す配置例に限定されない。 The diode 6 is disposed in the vicinity of the LED 1a. Thereby, the junction temperature of the diode 6 and the junction temperature of LED1a can be made substantially the same. In FIG. 2A, LEDs are arranged at intervals of 45 ° with respect to the center O of the front of the apparatus, but this arrangement is merely an example, and the present invention is not limited to the arrangement example shown in FIG. 2A.
　ダイオード６が近傍に配置されるＬＥＤ１ａは導電性の放熱パッドを有し、ＬＥＤ１ａの放熱パッドはダイオード６のカソード電極と電気的に接続されていることが望ましい。この電気的接続を介してＬＥＤ１ａの放熱パッドからダイオード６のカソード電極に熱が伝達されるため、ＬＥＤ１ａのジャンクション温度とダイオード６のジャンクション温度との差を小さくすることができるからである。なお、ＬＥＤ１ｂ～１ｈはＬＥＤ１ａと同一の構造或いは異なる構造のいずれであっても構わない。 It is desirable that the LED 1a in which the diode 6 is disposed in the vicinity has a conductive heat radiating pad, and the heat radiating pad of the LED 1a is electrically connected to the cathode electrode of the diode 6. This is because heat is transferred from the heat dissipation pad of the LED 1a to the cathode electrode of the diode 6 through this electrical connection, so that the difference between the junction temperature of the LED 1a and the junction temperature of the diode 6 can be reduced. The LEDs 1b to 1h may have the same structure as the LED 1a or a different structure.
　図２Ｂは、ＬＥＤ１ａの概略縦断面の一例を示す図である。図２Ｂに示す構造のＬＥＤ１ａは、透光性樹脂Ｌ０と、ＬＥＤチップＬ１と、絶縁性基板Ｌ２と、ボンディングワイヤＬ３及びＬ４と、熱伝導ペーストＬ５と、を備える。 FIG. 2B is a diagram showing an example of a schematic longitudinal section of the LED 1a. The LED 1a having the structure shown in FIG. 2B includes a translucent resin L0, an LED chip L1, an insulating substrate L2, bonding wires L3 and L4, and a heat conductive paste L5.
　絶縁性基板Ｌ２は、表側アノード電極Ｌ６、表側カソード電極Ｌ７、表側放熱パッドＬ８、裏側アノード電極Ｌ９、裏側カソード電極Ｌ１０、裏側放熱パッドＬ１１、及びスルーホールＬ１２～Ｌ１４を備える。表側アノード電極Ｌ６と裏側アノード電極Ｌ９とはスルーホールＬ１２によって電気的に接続され、表側カソード電極Ｌ７と裏側カソード電極Ｌ１０とはスルーホールＬ１３によって電気的に接続され、表側放熱パッドＬ８と裏側放熱パッドＬ１１とはスルーホールＬ１４によって電気的に接続される。 The insulating substrate L2 includes a front-side anode electrode L6, a front-side cathode electrode L7, a front-side heat dissipation pad L8, a back-side anode electrode L9, a back-side cathode electrode L10, a back-side heat dissipation pad L11, and through holes L12 to L14. The front side anode electrode L6 and the back side anode electrode L9 are electrically connected by a through hole L12, and the front side cathode electrode L7 and the back side cathode electrode L10 are electrically connected by a through hole L13, and the front side heat radiating pad L8 and the back side heat radiating pad. L11 is electrically connected through a through hole L14.
　ＬＥＤチップＬ１の裏面と表側放熱パッドＬ８との間には熱伝導ペーストＬ５が設けられ、ＬＥＤチップＬ１において発生した熱は熱伝導ペーストＬ５を介して表側放熱パッドＬ８に伝わる。熱伝導ペーストＬ５としては、熱伝導が高い銀ペースト等を用いるとよい。 The heat conductive paste L5 is provided between the back surface of the LED chip L1 and the front heat dissipation pad L8, and the heat generated in the LED chip L1 is transmitted to the front heat dissipation pad L8 via the heat conductive paste L5. As the heat conductive paste L5, a silver paste or the like having high heat conductivity may be used.
　ＬＥＤチップＬ１の表面に形成されているＰ型領域と表側アノード電極Ｌ６とはボンディングワイヤＬ３によって電気的に接続され、ＬＥＤチップＬ１の表面に形成されているＮ型領域と表側カソード電極Ｌ７とはボンディングワイヤＬ３によって電気的に接続される。 The P-type region formed on the surface of the LED chip L1 and the front-side anode electrode L6 are electrically connected by a bonding wire L3, and the N-type region formed on the surface of the LED chip L1 and the front-side cathode electrode L7 are connected to each other. It is electrically connected by a bonding wire L3.
　透光性樹脂Ｌ０は、ＬＥＤチップＬ１と、絶縁性基板Ｌ２の表面と、ボンディングワイヤＬ３及びＬ４と、を覆っている。 The translucent resin L0 covers the LED chip L1, the surface of the insulating substrate L2, and the bonding wires L3 and L4.
　図２Ｃは、ＬＥＤ１ａとダイオード６の電極配置例を示す概略上面図である。ダイオード６の裏側にアノード電極６１とカソード電極６２とが形成されている。また、ダイオード６と図２Ｂに示す構造のＬＥＤ１ａとを実装する実装基板２０の表側にグランドパターン２１が形成されている。グランドパターン２１としては、電気抵抗が小さい銅箔等を用いるとよい。ＬＥＤ１ａの裏側カソード電極Ｌ１０及び裏側放熱パッドＬ１１がグランドパターン２１によってダイオード６のカソード電極６２と電気的に接続されている。 FIG. 2C is a schematic top view showing an electrode arrangement example of the LED 1 a and the diode 6. An anode electrode 61 and a cathode electrode 62 are formed on the back side of the diode 6. A ground pattern 21 is formed on the front side of the mounting substrate 20 on which the diode 6 and the LED 1a having the structure shown in FIG. 2B are mounted. As the ground pattern 21, it is preferable to use a copper foil or the like having a small electric resistance. The back side cathode electrode L10 and the back side heat radiation pad L11 of the LED 1a are electrically connected to the cathode electrode 62 of the diode 6 by the ground pattern 21.
　図２Ｃに示すように、ＬＥＤ１ａの裏側カソード電極Ｌ１０と裏側放熱パッドＬ１１とは電気的に接続される。したがって、図２Ｂに示す構造の代わりに、図２Ｄに示すように裏側カソード電極Ｌ１０と裏側放熱パッドＬ１１とが繋がっている構造でもよく、図２Ｅに示すように表側カソード電極Ｌ７と表側放熱パッドＬ８とが繋がっている構造でもよく、図２Ｆに示すように裏側カソード電極Ｌ１０と裏側放熱パッドＬ１１とが繋がっており表側カソード電極Ｌ７と表側放熱パッドＬ８とが繋がっている構造でもよい。 As shown in FIG. 2C, the back side cathode electrode L10 and the back side heat radiation pad L11 of the LED 1a are electrically connected. Therefore, instead of the structure shown in FIG. 2B, a structure in which the back-side cathode electrode L10 and the back-side heat dissipating pad L11 are connected as shown in FIG. 2D may be used, and the front-side cathode electrode L7 and the front-side heat dissipating pad L8 are shown in FIG. The backside cathode electrode L10 and the backside heat dissipation pad L11 are connected as shown in FIG. 2F, and the frontside cathode electrode L7 and the frontside heat dissipation pad L8 are connected.
　図３は、第１実施形態の光半導体照明装置の動作を示すフローチャートである。 FIG. 3 is a flowchart showing the operation of the optical semiconductor lighting device of the first embodiment.
　第１実施形態の光半導体照明装置は、装置の起動が完了すると直ちに図３に示すフローチャートの動作を開始する。 The optical semiconductor lighting device of the first embodiment starts the operation of the flowchart shown in FIG. 3 as soon as the startup of the device is completed.
　まず始めに、定電流源５ａ及び８がオン状態になり、それ以外の電流源がオフ状態（出力電流停止状態）になるように制御部９が各電流源を制御するとともに、スイッチ３ａが定電流源５ａを選択するように制御部９がスイッチ３ａを制御する。このような制御状態の下で、定電流ＩＣ時におけるダイオード６の順方向電圧Ｖｆが電圧検出部７によって測定され、定電流ＩＣ時におけるＬＥＤ１ａの順方向電圧Ｖｆが電圧検出部４ａによって測定される（ステップＳ１０）。電圧検出部７の測定結果及び電圧検出部４ａの測定結果は、制御部９の内部メモリ（不図示）に格納される。なお、内部メモリの代わりに内部レジスタなどの他のデータ保持部を用いてもよい。 First, the control unit 9 controls each current source so that the constant current sources 5a and 8 are turned on and the other current sources are turned off (output current stop state), and the switch 3a is turned on. The controller 9 controls the switch 3a so as to select the current source 5a. Under such a control state, the forward voltage Vf of the diode 6 at the time of the constant current I C is measured by the voltage detector 7, and the forward voltage Vf of the LED 1a at the time of the constant current I C is measured by the voltage detector 4a. (Step S10). The measurement result of the voltage detector 7 and the measurement result of the voltage detector 4a are stored in an internal memory (not shown) of the controller 9. Note that another data holding unit such as an internal register may be used instead of the internal memory.
　ダイオード６が遮光性物質で封止されたダイオードであるため、電圧検出部７の測定結果は外光の影響を受けていない。つまり、電圧検出部７よって測定される定電流ＩＣ時におけるダイオード６の順方向電圧Ｖｆは定電流ＩＣ時におけるダイオード６の暗黒時の順方向電圧Ｖｆ＿ｄと等価である。一方、ＬＥＤ１ａに外光が入射した場合に、電圧検出部４ａの測定結果は外光の影響を受ける。 Since the diode 6 is a diode sealed with a light-shielding substance, the measurement result of the voltage detector 7 is not affected by external light. That is, the forward voltage Vf of the diode 6 at the constant current I C measured by the voltage detector 7 is equivalent to the forward voltage Vf_d of the diode 6 at the dark time at the constant current I C. On the other hand, when external light is incident on the LED 1a, the measurement result of the voltage detector 4a is affected by the external light.
　ステップＳ１０に続くステップＳ２０において、制御部９は、電圧検出部７の測定結果及び電圧検出部４ａの測定結果から、定電流ＩＣ時におけるＬＥＤ１ａの暗黒時の順方向電圧Ｖｆ＿ｄを求めて、求めたデータを内部メモリなどのデータ保持部に格納する。 In step S20 following step S10, the control unit 9, the measurement results of the measurement result of the voltage detector 7 and the voltage detection unit 4a, for a forward voltage Vf_d during dark LED1a during the constant current I C, determined The stored data is stored in a data holding unit such as an internal memory.
　例えば、定電流ＩＣ時におけるダイオード６の暗黒時の順方向電圧Ｖｆ＿ｄと定電流ＩＣ時におけるＬＥＤ１ａの暗黒時の順方向電圧Ｖｆ＿ｄとが同一温度条件下で１：５の関係である場合には、電圧検出部７の測定結果を５倍して電圧検出部４ａの測定結果から引くことでＬＥＤ１ａの光起電力を求め、電圧検出部４ａの測定結果からＬＥＤ１ａの光起電力を引けばよい。これにより、定電流ＩＣ時におけるＬＥＤ１ａの暗黒時の順方向電圧Ｖｆ＿ｄを求めることができる。定電流ＩＣ時におけるダイオード６の暗黒時の順方向電圧Ｖｆ＿ｄと定電流ＩＣ時におけるＬＥＤ１ａの暗黒時の順方向電圧Ｖｆ＿ｄとの同一温度条件下での関係は、ダイオード６とＬＥＤ１ａの各特性から理論的に求まる。 For example, the forward voltage Vf_d during dark LED1a in forward voltage Vf_d a constant current I C at the time of dark diode 6 during the constant current I C is 1 at the same temperature conditions: when a 5 relationship Is obtained by multiplying the measurement result of the voltage detection unit 7 by 5 and subtracting it from the measurement result of the voltage detection unit 4a to obtain the photovoltaic power of the LED 1a, and subtracting the photovoltaic power of the LED 1a from the measurement result of the voltage detection unit 4a. . Thereby, the forward voltage Vf_d when the LED 1a is dark at the time of the constant current I C can be obtained. Each characteristic of the relationship at the same temperature of the forward voltage Vf_d during dark LED1a in forward voltage Vf_d a constant current I C at the time of dark diode 6 during the constant current I C, the diode 6 and LED1a It can be found theoretically from
　ステップＳ２０に続くステップＳ３０において、制御部９は、電圧検出部４ａの測定結果と定電流ＩＣ時におけるＬＥＤ１ａの暗黒時の順方向電圧Ｖｆ＿ｄとの差分（＝ＬＥＤ１ａの光起電力）を求めて、求めたデータを内部メモリなどのデータ保持部に格納する。 In step S30 following step S20, the control unit 9 obtains the difference (= photovoltaic LED1a) the forward voltage Vf_d during dark LED1a in the measurement result and the constant current I C at the voltage detection unit 4a The obtained data is stored in a data holding unit such as an internal memory.
　なお、ステップＳ２０の処理中にＬＥＤ１ａの光起電力を求めている場合は、ステップＳ２０の処理中に求めたＬＥＤ１ａの光起電力をステップＳ３０で流用してもよい。 In addition, when the photovoltaic power of LED1a is calculated | required during the process of step S20, you may divert the photovoltaic power of LED1a calculated | required during the process of step S20 by step S30.
　ステップＳ３０に続くステップＳ４０において、定電流源５ｂがオン状態になり、可変電流源２ｂがオフ状態（出力電流停止状態）になるように制御部９が定電流源５ｂ及び可変電流源２ｂを制御するとともに、スイッチ３ｂが定電流源５ｂを選択するように制御部９がスイッチ３ｂを制御する。このような制御状態の下で、定電流ＩＣ時におけるＬＥＤ１ｂの順方向電圧Ｖｆが電圧検出部４ｂによって測定される。 In step S40 following step S30, the control unit 9 controls the constant current source 5b and the variable current source 2b so that the constant current source 5b is turned on and the variable current source 2b is turned off (output current stopped state). At the same time, the control unit 9 controls the switch 3b so that the switch 3b selects the constant current source 5b. Under such a control state, the forward voltage Vf of the LED 1b at the time of the constant current I C is measured by the voltage detector 4b.
　電圧検出部４ｂによる定電流ＩＣ時におけるＬＥＤ１ｂの順方向電圧Ｖｆの測定において、スイッチ３ａ，３ｃ～３ｈ、定電流源５ａ，５ｃ～２ｈ、及び可変電流源２ａ，２ｃ～２ｈの状態は特に限定されない。例えば、スイッチ３ａ，３ｃ～３ｈが可変電流源２ａ，２ｃ～２ｈを選択し、可変電流源２ａ，２ｃ～２ｈがオン状態になるようにすれば、定電流ＩＣ時におけるＬＥＤ１ａ，１ｃ～１ｈの暗黒時の順方向電圧Ｖｆ＿ｄを求める際に、ＬＥＤ１ｂに入射するＬＥＤ１ａ，１ｃ～１ｈの影響を排除することが可能となる。また、例えば、スイッチ３ａ，３ｃ～３ｈが定電流源５ｃ～５ｈを選択し、定電流源５ｃ～５ｈがオン状態になるようにすれば、電圧検出部４ｂによる定電流ＩＣ時におけるＬＥＤ１ｂの順方向電圧Ｖｆの測定と同時に、電圧検出部４ｃ～４ｈによる定電流ＩＣ時におけるＬＥＤ１ｂ～１ｈの順方向電圧Ｖｆを測定することが可能となる。 In the measurement of the forward voltage Vf of LED1b during the constant current I C by the voltage detection unit 4b, a switch 3a, 3c ~ 3h, the constant current source 5a, 5c ~ 2h, and the variable current source 2a, the 2c ~ 2h state particularly It is not limited. For example, if the switches 3a and 3c to 3h select the variable current sources 2a and 2c to 2h and the variable current sources 2a and 2c to 2h are turned on, the LEDs 1a, 1c to 1h at the constant current I C are obtained. When the forward voltage Vf_d in the dark is determined, the influence of the LEDs 1a and 1c to 1h incident on the LED 1b can be eliminated. Further, for example, if the switches 3a, 3c to 3h select the constant current sources 5c to 5h and the constant current sources 5c to 5h are turned on, the LED 1b at the constant current I C by the voltage detector 4b is set. simultaneously with the measurement of the forward voltage Vf, it is possible to measure a forward voltage Vf of the LED 1b ~ 1h during the constant current I C by the voltage detection unit 4c ~ 4h.
　ステップＳ４０において、電圧検出部４ｃ～４ｈによる定電流ＩＣ時におけるＬＥＤ１ｃ～１ｈの順方向電圧Ｖｆの測定も、電圧検出部４ｂによる定電流ＩＣ時におけるＬＥＤ１ｂの順方向電圧Ｖｆの測定と同様に実行される。そして、電圧検出部４ｂ～４ｈの測定結果は、制御部９の内部メモリなどのデータ保持部に格納される。 In step S40, the measurement of the forward voltage Vf of the LEDs 1c to 1h at the constant current I C by the voltage detectors 4c to 4h is the same as the measurement of the forward voltage Vf of the LED 1b at the constant current I C by the voltage detector 4b. To be executed. The measurement results of the voltage detection units 4b to 4h are stored in a data holding unit such as an internal memory of the control unit 9.
　ステップＳ４０に続くステップＳ５０において、制御部９は、ステップＳ４０で求めた電圧検出部４ｂ～４ｈの測定結果とステップＳ３０で求めたＬＥＤ１ａの差分値（＝ＬＥＤ１ａの光起電力）から、定電流ＩＣ時におけるＬＥＤ１ｂ～１ｈの暗黒時の順方向電圧Ｖｆ＿ｄを求めて、求めたデータを内部メモリなどのデータ保持部に格納する。 In step S50 following step S40, the control unit 9 determines the constant current I from the difference between the measurement result of the voltage detection units 4b to 4h obtained in step S40 and the LED 1a obtained in step S30 (= photovoltage of the LED 1a). The forward voltage Vf_d in the dark of the LEDs 1b to 1h at the time C is obtained, and the obtained data is stored in a data holding unit such as an internal memory.
　例えば、定電流ＩＣ時におけるＬＥＤ１ａの光起電力と定電流ＩＣ時におけるＬＥＤ１ｂの光起電力とが同一受光条件下で１：１の関係である場合には、ステップＳ４０で求めた電圧検出部４ｂの測定結果からステップＳ３０で求めたＬＥＤ１ａの差分値（＝ＬＥＤ１ａの光起電力）を引けばよい。これにより、定電流ＩＣ時におけるＬＥＤ１ｂの暗黒時の順方向電圧Ｖｆ＿ｄを求めることができる。定電流ＩＣ時におけるＬＥＤ１ａの光起電力と定電流ＩＣ時におけるＬＥＤ１ｂの光起電力との同一受光条件下での関係は、ＬＥＤ１ａ及び１ｂの各特性から理論的に求まる。ＬＥＤ１ｃ～１ｈについてもＬＥＤ１ｂと同様である。 For example, when the photovoltaic power of the LED 1a at the constant current I C and the photovoltaic power of the LED 1b at the constant current I C have a 1: 1 relationship under the same light receiving conditions, the voltage detection obtained in step S40 What is necessary is just to subtract the difference value (= photovoltaic power of LED1a) of LED1a calculated | required by step S30 from the measurement result of the part 4b. Thereby, the forward voltage Vf_d when the LED 1b is dark at the time of the constant current I C can be obtained. Relationship in the same receiving conditions and photovoltaic LED1b in photovoltaic and constant current I C at the LED1a during the constant current I C is obtained theoretically from the properties of LED1a and 1b. The LEDs 1c to 1h are the same as the LED 1b.
　ステップＳ５０に続くステップＳ６０において、制御部９は、ステップＳ２０で求めた定電流ＩＣ時におけるＬＥＤ１ａの暗黒時の順方向電圧Ｖｆ＿ｄ及びステップＳ５０で求めた定電流ＩＣ時におけるＬＥＤ１ｂ～１ｈの暗黒時の順方向電圧Ｖｆ＿ｄから、ＬＥＤ１ａ～１ｈのジャンクション温度を求めて、求めたデータを内部メモリなどのデータ保持部に格納する。定電流ＩＣ時におけるＬＥＤ１ａの暗黒時の順方向電圧Ｖｆ＿ｄとＬＥＤ１ａのジャンクション温度との関係は、ＬＥＤ１ａの特性から理論的に求まる。ＬＥＤ１ｂ～１ｈについてもＬＥＤ１ａと同様である。 In step S60 following step S50, the controller 9 determines the forward voltage Vf_d of the LED 1a in the dark at the constant current I C obtained in step S20 and the darkness of the LEDs 1b to 1h in the constant current I C obtained in step S50. The junction temperatures of the LEDs 1a to 1h are obtained from the forward voltage Vf_d at the time, and the obtained data is stored in a data holding unit such as an internal memory. Relationship between the forward voltage Vf_d and LED1a junction temperature during dark LED1a during the constant current I C is obtained theoretically from the characteristics of LED1a. The LEDs 1b to 1h are the same as the LED 1a.
　ステップＳ６０に続くステップＳ７０において、制御部９は、ステップＳ５０で求めたＬＥＤ１ａ～１ｈのジャンクション温度それぞれに応じて、可変電流源２ａ～２ｈの出力電流それぞれを制御する。 In step S70 following step S60, the control unit 9 controls the output currents of the variable current sources 2a to 2h according to the junction temperatures of the LEDs 1a to 1h obtained in step S50.
　ＬＥＤのジャンクション温度とＬＥＤの順方向電圧Ｖｆとの間には負の相関があり、ジャンクション温度が上がると順方向電圧Ｖｆが低下する。このため、順方向電圧Ｖｆに光起電力が含まれていると、ジャンクション温度が真の値よりも低く検出されることになる。本実施形態では、上述の通り暗黒時の順方向電圧Ｖｆ＿ｄからジャンクション温度を求めているので、ジャンクション温度が真の値よりも低く検出されることを防止あるいは抑制することができる。 There is a negative correlation between the junction temperature of the LED and the forward voltage Vf of the LED, and the forward voltage Vf decreases as the junction temperature increases. For this reason, when the photovoltaic voltage is included in the forward voltage Vf, the junction temperature is detected lower than the true value. In the present embodiment, since the junction temperature is obtained from the forward voltage Vf_d in the dark as described above, it can be prevented or suppressed that the junction temperature is detected lower than the true value.
　ステップＳ７０での制御内容は特に限定されないが、例えば、ジャンクション温度が上昇すると発光効率が低下することを考慮して、ＬＥＤの輝度が所望の範囲に収まるように、制御部９が、ＬＥＤ１ａ～１ｈのジャンクション温度それぞれに応じて、可変電流源２ａ～２ｈの出力電流それぞれを制御する制御例が考えられる。この場合、ジャンクション温度が真の値よりも低く検出されることを防止あるいは抑制することにより、輝度が所望の範囲より高くなることを防止あるいは抑制することができ、ＬＥＤの消費電力の低減が可能となる。 The contents of control in step S70 are not particularly limited. For example, in consideration of the fact that the luminous efficiency decreases as the junction temperature rises, the controller 9 controls the LEDs 1a to 1h so that the luminance of the LEDs falls within a desired range. A control example in which each of the output currents of the variable current sources 2a to 2h is controlled in accordance with each of the junction temperatures can be considered. In this case, by preventing or suppressing the junction temperature from being detected lower than the true value, it is possible to prevent or suppress the luminance from becoming higher than the desired range, thereby reducing the power consumption of the LED. It becomes.
　また、例えば、ジャンクション温度が許容値を超えないように、制御部９が、ＬＥＤ１ａ～１ｈのジャンクション温度それぞれに応じて、可変電流源２ａ～２ｈの出力電流それぞれを制御する制御例が考えられる。この場合、ジャンクション温度が真の値よりも低く検出されることを防止あるいは抑制することにより、ジャンクション温度が上がり過ぎることを防止あるいは抑制することができ、ＬＥＤの寿命を長くすることができる。 Also, for example, a control example in which the control unit 9 controls the output currents of the variable current sources 2a to 2h according to the junction temperatures of the LEDs 1a to 1h so that the junction temperature does not exceed an allowable value can be considered. In this case, by preventing or suppressing the detection of the junction temperature lower than the true value, it is possible to prevent or suppress the junction temperature from rising excessively, and to extend the life of the LED.
　また、ＬＥＤを空冷するためのファンを光半導体照明装置に設け、制御部９が、ステップＳ７０での制御とともに、ステップＳ５０で求めたＬＥＤ１ａ～１ｈのジャンクション温度に応じてファンのオン／オフ制御あるいは回転数制御を制御する制御例も考えられる。この場合、ジャンクション温度が真の値よりも低く検出されることを防止あるいは抑制することにより、ファンの過剰な駆動を防止あるいは抑制することができ、ファンの消費電力の低減が可能となる。 In addition, a fan for air-cooling the LED is provided in the optical semiconductor lighting device, and the control unit 9 controls the fan on / off according to the junction temperature of the LEDs 1a to 1h obtained in step S50 as well as the control in step S70. A control example for controlling the rotational speed control is also conceivable. In this case, by preventing or suppressing the junction temperature from being detected lower than the true value, excessive driving of the fan can be prevented or suppressed, and the power consumption of the fan can be reduced.
　ステップＳ７０に続くステップＳ８０において、制御部９は、最後にステップＳ７０でＬＥＤ１ａ～１ｈのジャンクション温度を求めてから所定時間が経過したか否かを判定する。この判定を実現するために制御部９は計時機能を備えている。 In step S80 following step S70, the controller 9 determines whether or not a predetermined time has elapsed since the junction temperatures of the LEDs 1a to 1h were finally obtained in step S70. In order to realize this determination, the control unit 9 has a time measuring function.
　最後にステップＳ６０でＬＥＤ１ａ～１ｈのジャンクション温度を求めてから所定時間が経過していないと判定された場合（ステップＳ８０のＮＯ）、ステップＳ７０に戻る。 Finally, when it is determined in step S60 that the predetermined time has not elapsed since the junction temperatures of the LEDs 1a to 1h were obtained (NO in step S80), the process returns to step S70.
　一方、最後にステップＳ６０でＬＥＤ１ａ～１ｈのジャンクション温度を求めてから所定時間が経過していると判定された場合（ステップＳ８０のＹＥＳ）、ステップＳ１０に戻る。 On the other hand, if it is determined that the predetermined time has elapsed since the junction temperatures of the LEDs 1a to 1h were finally obtained in step S60 (YES in step S80), the process returns to step S10.
　第１実施形態の光半導体照明装置は、電源オフ状態になるまで上述した一連の動作を継続して実行する。 The optical semiconductor lighting device of the first embodiment continuously executes the above-described series of operations until the power is turned off.
　なお、ステップＳ２０、Ｓ３０、Ｓ５０、Ｓ６０の各処理は、制御部９が予め記憶している関係式を用いて実行してもよく、制御部９が予め記憶しているデータテーブルを用いて実行してもよい。 In addition, each process of step S20, S30, S50, S60 may be performed using the relational expression which the control part 9 has memorize | stored previously, and is performed using the data table which the control part 9 has memorize | stored beforehand. May be.
　上述した図３に示すフローチャートの動作は、ＬＥＤ１ａ～ｈに入射する外光の光量分布が均一であること、つまりＬＥＤ１ａ～１ｈそれぞれに入射する外光がそれぞれ同等の光量であることを期待したものとなっている。 The above-described operation of the flowchart shown in FIG. 3 expects that the distribution of the amount of external light incident on the LEDs 1a to h is uniform, that is, the external light incident on each of the LEDs 1a to 1h has the same amount of light. It has become.
　ＬＥＤ１ａ～ｈに入射する外光の光量分布が均一でないことが予想される場合には、例えば、ＬＥＤ１ａ～ｈを複数のグループ（例えば、ＬＥＤ１ａ～１ｃ，１ｇ，１ｈが属する第１グループとＬＥＤ１ｄ～１ｆが属する第２グループと）に分類し、各グループにダイオード６を１個設ける構成にしてもよい。 When it is expected that the light quantity distribution of the external light incident on the LEDs 1a to h is not uniform, for example, the LEDs 1a to h are divided into a plurality of groups (for example, the first group to which the LEDs 1a to 1c, 1g, and 1h belong and the LEDs 1d to h). It is also possible to adopt a configuration in which one diode 6 is provided in each group.
　また、光半導体照明装置が屋外の所定位置に固定されて使用される場合には、外光の状態に規則性がある可能性が高いため、例えば、日付や時間帯に応じたＬＥＤ１ａ～ｈの光起電力の相関関係を予め把握しておくことで、ステップＳ５０で用いる差分値を補正する構成にしてもよい。 In addition, when the optical semiconductor lighting device is used while being fixed at a predetermined outdoor position, there is a high possibility that there is regularity in the state of outside light. For example, the LEDs 1a to h corresponding to the date and time zone A configuration may be adopted in which the difference value used in step S50 is corrected by grasping the correlation of the photovoltaic power in advance.
＜第２実施形態＞
　図４は、第２実施形態の光半導体照明装置の構成を示す図である。 Second Embodiment
FIG. 4 is a diagram illustrating a configuration of the optical semiconductor lighting device of the second embodiment.
　第２実施形態の光半導体照明装置は、制御部９が外部からの調光信号を受け取り、その調光信号に応じて可変電流源２ａ～２ｈの出力電流を調整する点で第１実施形態の光半導体照明装置と異なっており、それ以外の部分は基本的に第１実施形態の光半導体照明装置と同様である。 The optical semiconductor lighting device of the second embodiment is the same as that of the first embodiment in that the control unit 9 receives a dimming signal from the outside and adjusts the output currents of the variable current sources 2a to 2h according to the dimming signal. It is different from the optical semiconductor lighting device, and other parts are basically the same as those of the optical semiconductor lighting device of the first embodiment.
　制御部９は、外部からの調光信号に応じてオンデューティ比が変化するＰＷＭ信号を可変電流源２ａ～２ｈに出力する。例えば外部からの調光信号がＰＷＭ信号である場合には、制御部９から可変電流源２ａ～２ｈに出力するＰＷＭ信号を外部からの調光信号と同一波形にするとよい。例えば外部からの調光信号が直流電圧信号である場合には、制御部９から可変電流源２ａ～２ｈに出力するＰＷＭ信号のオンデューティ比を直流電圧信号の電圧値に比例させるとよい。 The controller 9 outputs a PWM signal whose on-duty ratio changes according to a dimming signal from the outside to the variable current sources 2a to 2h. For example, when the external dimming signal is a PWM signal, the PWM signal output from the control unit 9 to the variable current sources 2a to 2h may have the same waveform as the external dimming signal. For example, when the external dimming signal is a DC voltage signal, the on-duty ratio of the PWM signal output from the control unit 9 to the variable current sources 2a to 2h may be proportional to the voltage value of the DC voltage signal.
　本実施形態において、可変電流源２ａ～２ｈは、原則として、制御部９から供給されるＰＷＭ信号のオン期間でオン状態となり、制御部９から供給されるＰＷＭ信号のオフ期間でオフ状態（出力電流停止状態）となる。そして、制御部９は、制御部９から可変電流源２ａ～２ｈに供給されるＰＷＭ信号のオフ期間において、少なくともステップＳ１０及びステップＳ４０の処理を実行する。これにより、ＬＥＤ１ａ～１ｈによる照明が妨げられることなく、ＬＥＤ１ａ～１ｈのジャンクション温度を求めることが可能となる。なお、図３のステップＳ１０～Ｓ６０の処理を全てＰＷＭ信号のオフ期間において実行してもよい。 In this embodiment, in principle, the variable current sources 2a to 2h are turned on in the on period of the PWM signal supplied from the control unit 9, and are turned off (output) in the off period of the PWM signal supplied from the control unit 9. (Current stop state). Then, the control unit 9 executes at least the processes of step S10 and step S40 in the off period of the PWM signal supplied from the control unit 9 to the variable current sources 2a to 2h. As a result, the junction temperatures of the LEDs 1a to 1h can be obtained without impeding illumination by the LEDs 1a to 1h. Note that all the processes of steps S10 to S60 in FIG. 3 may be executed during the OFF period of the PWM signal.
＜第３実施形態＞
　図５は、第３実施形態の光半導体照明装置の構成を示す図である。 <Third Embodiment>
FIG. 5 is a diagram illustrating a configuration of the optical semiconductor lighting device of the third embodiment.
　第３実施形態の光半導体照明装置は、ダイオード６がサーミスター１０に置き換わっている点で第１実施形態の光半導体照明装置と異なっており、それ以外の部分は基本的に第１実施形態の光半導体照明装置と同様である。 The optical semiconductor lighting device of the third embodiment is different from the optical semiconductor lighting device of the first embodiment in that the diode 6 is replaced with the thermistor 10, and other parts are basically the same as those of the first embodiment. This is the same as the optical semiconductor lighting device.
　図６は、第３実施形態の光半導体照明装置の動作を示すフローチャートである。 FIG. 6 is a flowchart showing the operation of the optical semiconductor lighting device of the third embodiment.
　第３実施形態の光半導体照明装置は、装置の起動が完了すると直ちに図６に示すフローチャートの動作を開始する。 The optical semiconductor lighting device of the third embodiment starts the operation of the flowchart shown in FIG. 6 as soon as the startup of the device is completed.
　まず始めに、定電流源５ａ及び８がオン状態になり、それ以外の電流源がオフ状態（出力電流停止状態）になるように制御部９が各電流源を制御するとともに、スイッチ３ａが定電流源５ａを選択するように制御部９がスイッチ３ａを制御する。このような制御状態の下で、サーミスター１０の温度が電圧検出部７によって測定され、定電流ＩＣ時におけるＬＥＤ１ａの順方向電圧Ｖｆが電圧検出部４ａによって測定される（ステップＳ１１）。電圧検出部７の測定結果（温度測定結果）及び電圧検出部４ａの測定結果は、内部メモリなどのデータ保持部に格納される。 First, the control unit 9 controls each current source so that the constant current sources 5a and 8 are turned on and the other current sources are turned off (output current stop state), and the switch 3a is turned on. The controller 9 controls the switch 3a so as to select the current source 5a. Under such a control state, the temperature of the thermistor 10 is measured by the voltage detector 7, and the forward voltage Vf of the LED 1a at the time of the constant current I C is measured by the voltage detector 4a (step S11). The measurement result (temperature measurement result) of the voltage detection unit 7 and the measurement result of the voltage detection unit 4a are stored in a data holding unit such as an internal memory.
　サーミスター１０はＬＥＤ１ａの近傍に配置されている。これにより、サーミスター１０の温度とＬＥＤ１ａのジャンクション温度を略同一にすることができる。したがって、サーミスター１０の温度をＬＥＤ１ａのジャンクション温度とみなすことができる。サーミスター１０の抵抗値は外光の影響を受けないため、電圧検出部７の測定結果は外光の影響を受けていない。一方、ＬＥＤ１ａに外光が入射した場合に、電圧検出部４ａの測定結果は外光の影響を受ける。 The thermistor 10 is arranged in the vicinity of the LED 1a. Thereby, the temperature of the thermistor 10 and the junction temperature of LED1a can be made substantially the same. Therefore, the temperature of the thermistor 10 can be regarded as the junction temperature of the LED 1a. Since the resistance value of the thermistor 10 is not affected by external light, the measurement result of the voltage detector 7 is not affected by external light. On the other hand, when external light is incident on the LED 1a, the measurement result of the voltage detector 4a is affected by the external light.
　ステップＳ１１に続くステップＳ２１において、制御部９は、電圧検出部７の測定結果から、定電流ＩＣ時におけるＬＥＤ１ａの暗黒時の順方向電圧Ｖｆ＿ｄを求めて、求めたデータを内部メモリなどのデータ保持部に格納する。 In step S21 following step S11, the control unit 9 obtains the forward voltage Vf_d in the dark of the LED 1a at the time of the constant current I C from the measurement result of the voltage detection unit 7, and the obtained data is stored in the internal memory or the like. Store in the holding unit.
　定電流ＩＣ時におけるＬＥＤ１ａの暗黒時の順方向電圧Ｖｆ＿ｄとＬＥＤ１ａのジャンクション温度との関係は、ＬＥＤ１ａの特性から理論的に求まる。 Relationship between the forward voltage Vf_d and LED1a junction temperature during dark LED1a during the constant current I C is obtained theoretically from the characteristics of LED1a.
　ステップＳ３１～ステップＳ８１それぞれは、図３のステップＳ３０～ステップＳ８０それぞれと同一のステップであるため、ここでは説明を省略する。 Step S31 to Step S81 are the same as Step S30 to Step S80 in FIG.
　第３実施形態の光半導体照明装置は、電源オフ状態になるまで図６に示す動作を継続して実行する。 The optical semiconductor lighting device of the third embodiment continuously performs the operation shown in FIG. 6 until the power is turned off.
　なお、ステップＳ２１の処理は、制御部９が予め記憶している関係式を用いて実行してもよく、制御部９が予め記憶しているデータテーブルを用いて実行してもよい。 The process of step S21 may be executed using a relational expression stored in advance by the control unit 9, or may be executed using a data table stored in advance by the control unit 9.
　第３実施形態の光半導体照明装置も、第１，２実施形態の光半導体照明装置と同様の効果を奏する。 The optical semiconductor lighting device of the third embodiment also has the same effect as the optical semiconductor lighting device of the first and second embodiments.
＜第４実施形態＞
　図７は、第４実施形態の光半導体照明装置の構成を示す図である。 <Fourth embodiment>
FIG. 7 is a diagram illustrating the configuration of the optical semiconductor lighting device of the fourth embodiment.
　第４実施形態の光半導体照明装置は、ダイオード６、電圧検出部７、及び定電流源８がシャッター駆動部１１及びシャッター１２に置き換わっている点で第１実施形態の光半導体照明装置と異なっており、それ以外の部分は基本的に第１実施形態の光半導体照明装置と同様である。 The optical semiconductor lighting device of the fourth embodiment is different from the optical semiconductor lighting device of the first embodiment in that the diode 6, the voltage detection unit 7, and the constant current source 8 are replaced with the shutter driving unit 11 and the shutter 12. The other parts are basically the same as those of the optical semiconductor lighting device of the first embodiment.
　図８は、第４実施形態の光半導体照明装置の動作を示すフローチャートである。 FIG. 8 is a flowchart showing the operation of the optical semiconductor lighting device of the fourth embodiment.
　第４実施形態の光半導体照明装置は、装置の起動が完了すると直ちに図８に示すフローチャートの動作を開始する。 The optical semiconductor lighting device according to the fourth embodiment starts the operation of the flowchart shown in FIG. 8 immediately after the start-up of the device is completed.
　まず始めに、定電流源５ａがオン状態になり、それ以外の電流源がオフ状態（出力電流停止状態）になるように制御部９が各電流源を制御するとともに、スイッチ３ａが定電流源５ａを選択するように制御部９がスイッチ３ａを制御する。さらに、シャッター駆動部１２がシャッター１１を駆動しないように制御部９がシャッター駆動部１２を制御する。これにより、ＬＥＤ１ａに入射する外光がシャッター１１によって遮光されない状態となる。このような制御状態の下で、定電流ＩＣ時におけるＬＥＤ１ａの順方向電圧Ｖｆが電圧検出部４ａによって測定される（ステップＳ１２）。電圧検出部４ａの測定結果は、定電流ＩＣ時におけるＬＥＤ１ａの順方向電圧Ｖｆ＿ｄのデータとして、内部メモリなどのデータ保持部に格納される。 First, the control unit 9 controls each current source so that the constant current source 5a is turned on and the other current sources are turned off (output current stop state), and the switch 3a is connected to the constant current source. The control unit 9 controls the switch 3a so as to select 5a. Further, the control unit 9 controls the shutter drive unit 12 so that the shutter drive unit 12 does not drive the shutter 11. As a result, the external light incident on the LED 1a is not shielded by the shutter 11. Under such a control state, the forward voltage Vf of the LED 1a at the time of the constant current I C is measured by the voltage detector 4a (step S12). Measurement results of the voltage detection unit 4a, as the data of the forward voltage Vf_d of LED1a during the constant current I C, is stored in the data holding unit, such as an internal memory.
　ステップＳ１２に続くステップＳ２２において、シャッター駆動部１２がシャッター１１を駆動するように制御部９がシャッター駆動部１２を制御する。これにより、ＬＥＤ１ａに入射する外光がシャッター１１によって遮光される状態となる。このような制御状態の下で、定電流ＩＣ時におけるＬＥＤ１ａの暗黒時の順方向電圧Ｖｆ＿ｄが電圧検出部４ａによって測定される（ステップＳ２２）。電圧検出部４ａの測定結果は、定電流ＩＣ時におけるＬＥＤ１ａの暗黒時の順方向電圧Ｖｆ＿ｄのデータとして、内部メモリなどのデータ保持部に格納される。 In step S22 following step S12, the controller 9 controls the shutter driver 12 so that the shutter driver 12 drives the shutter 11. As a result, external light incident on the LED 1a is blocked by the shutter 11. Under such a control state, the forward voltage Vf_d in the dark state of the LED 1a at the constant current I C is measured by the voltage detection unit 4a (step S22). Measurement results of the voltage detection unit 4a, as the data of the forward voltage Vf_d during dark LED1a during the constant current I C, is stored in the data holding unit, such as an internal memory.
　ステップＳ２２の処理が終了すると、シャッター駆動部１２がシャッター１１を駆動しないように制御部９がシャッター駆動部１２を制御する。これにより、ＬＥＤ１ａに入射する外光がシャッター１１によって遮光しない状態に戻る。 When the processing of step S22 is completed, the control unit 9 controls the shutter drive unit 12 so that the shutter drive unit 12 does not drive the shutter 11. As a result, the outside light incident on the LED 1a returns to the state where it is not shielded by the shutter 11.
　ステップＳ２２に続くステップＳ３２において、制御部９は、ステップＳ１２での電圧検出部４ａの測定結果とステップＳ２２での電圧検出部４ａの測定結果との差分（＝ＬＥＤ１ａの光起電力）を求めて、求めたデータを内部メモリなどのデータ保持部に格納する。 In step S32 following step S22, the control unit 9 obtains a difference (= photovoltaic power of the LED 1a) between the measurement result of the voltage detection unit 4a in step S12 and the measurement result of the voltage detection unit 4a in step S22. The obtained data is stored in a data holding unit such as an internal memory.
　ステップＳ４２～ステップＳ８２それぞれは、図３のステップＳ４０～ステップＳ８０それぞれと同一のステップであるため、ここでは説明を省略する。 Since steps S42 to S82 are the same as steps S40 to S80 in FIG. 3, description thereof is omitted here.
　第４実施形態の光半導体照明装置は、電源オフ状態になるまで図８に示す動作を継続して実行する。 The optical semiconductor lighting device of the fourth embodiment continuously performs the operation shown in FIG. 8 until the power is turned off.
　第４実施形態の光半導体照明装置も、第１～３実施形態の光半導体照明装置と同様の効果を奏する。なお、例えば第４実施形態の光半導体照明装置を車両のヘッドライトに用いた場合に、ＡＦＳ（adaptive　front-lighting　system）で使用される遮光シェードを改良してシャッター１１に流用してもよい。 The optical semiconductor lighting device of the fourth embodiment also has the same effects as the optical semiconductor lighting device of the first to third embodiments. For example, when the optical semiconductor lighting device of the fourth embodiment is used for a vehicle headlight, a light shielding shade used in an AFS (adaptive front-lighting system) may be improved and used for the shutter 11.
＜第５実施形態＞
　図９は、第５実施形態の光半導体照明装置の構成を示す図である。 <Fifth Embodiment>
FIG. 9 is a diagram illustrating the configuration of the optical semiconductor lighting device of the fifth embodiment.
　第５実施形態の光半導体照明装置は、電圧検出部４ａ～４ｈ及び定電流源５ａ～５ｈが電流検出部１３ａ～１３ｈ及び定電圧源１４ａ～１４ｈが置き換わり電圧検出部７及び定電流源８が電流検出部１５及び定電圧源１６が置き換わっている点で第１実施形態の光半導体照明装置と異なっており、それ以外の部分は基本的に第１実施形態の光半導体照明装置と同様である。 In the optical semiconductor lighting device of the fifth embodiment, the voltage detectors 4a to 4h and the constant current sources 5a to 5h are replaced with the current detectors 13a to 13h and the constant voltage sources 14a to 14h, and the voltage detector 7 and the constant current source 8 are replaced. It differs from the optical semiconductor lighting device of the first embodiment in that the current detection unit 15 and the constant voltage source 16 are replaced, and other parts are basically the same as those of the optical semiconductor lighting device of the first embodiment. .
　図１０は、第５実施形態の光半導体照明装置の動作を示すフローチャートである。 FIG. 10 is a flowchart showing the operation of the optical semiconductor lighting device of the fifth embodiment.
　第５実施形態の光半導体照明装置は、装置の起動が完了すると直ちに図１０に示すフローチャートの動作を開始する。 The optical semiconductor lighting device of the fifth embodiment starts the operation of the flowchart shown in FIG. 10 immediately after the start of the device is completed.
　まず始めに、可変電流源２ａ～２ｈがオフ状態（出力電流停止状態）になるように制御部９が可変電流源２ａ～２ｈを制御するとともに、スイッチ３ａが定電圧源１４ａを選択するように制御部９がスイッチ３ａを制御する。このような制御状態の下で、ダイオード６の順方向電流Ｉｆが電流検出部１５によって測定され、定電流ＩＣ時におけるＬＥＤ１ａの順方向電流Ｉｆが電流検出部１３ａによって測定される（ステップＳ１３）。電流検出部１５の測定結果及び電流検出部１３ａの測定結果は、内部メモリなどのデータ保持部に格納される。 First, the control unit 9 controls the variable current sources 2a to 2h so that the variable current sources 2a to 2h are turned off (output current stop state), and the switch 3a selects the constant voltage source 14a. The control unit 9 controls the switch 3a. Under such a control state, the forward current If of the diode 6 is measured by the current detector 15, and the forward current If of the LED 1a at the constant current I C is measured by the current detector 13a (step S13). . The measurement result of the current detection unit 15 and the measurement result of the current detection unit 13a are stored in a data holding unit such as an internal memory.
　ステップＳ１３に続くステップＳ２３において、制御部９は、電流検出部１５の測定結果及び電流検出部１３ａの測定結果から、ＬＥＤ１ａの暗黒時の順方向電流Ｉｆ＿ｄを求めて、求めたデータを内部メモリなどのデータ保持部に格納する。 In step S23 following step S13, the control unit 9 obtains the forward current If_d in the dark of the LED 1a from the measurement result of the current detection unit 15 and the measurement result of the current detection unit 13a, and stores the obtained data in an internal memory or the like. Stored in the data holding unit.
　ステップＳ２３に続くステップＳ３３において、制御部９は、電流検出部１３ａの測定結果とＬＥＤ１ａの暗黒時の順方向電流Ｉｆ＿ｄとの差分を求めて、求めたデータを内部メモリなどのデータ保持部に格納する。 In step S33 following step S23, the control unit 9 obtains a difference between the measurement result of the current detection unit 13a and the forward current If_d of the LED 1a in the dark, and stores the obtained data in a data holding unit such as an internal memory. To do.
　ステップＳ３３に続くステップＳ４３において、可変電流源２ｂがオフ状態（出力電流停止状態）になるように制御部９が可変電流源２ｂを制御するとともに、スイッチ３ｂが定電圧源１４ｂを選択するように制御部９がスイッチ３ｂを制御する。このような制御状態の下で、ＬＥＤ１ｂの順方向電流Ｉｆが電流検出部１３ｂによって測定される。 In step S43 following step S33, the control unit 9 controls the variable current source 2b so that the variable current source 2b is turned off (output current stop state), and the switch 3b selects the constant voltage source 14b. The controller 9 controls the switch 3b. Under such a control state, the forward current If of the LED 1b is measured by the current detector 13b.
　ステップＳ４３において、電流検出部１３ｃ～１３ｈによるＬＥＤ１ｃ～１ｈの順方向電流Ｉｆの測定も、電流検出部１３ｂによるＬＥＤ１ｂの順方向電流Ｉｆの測定と同様に実行される。そして、電流検出部１３ｂ～１３ｈの測定結果は、制御部９の内部メモリなどのデータ保持部に格納される。 In step S43, the measurement of the forward current If of the LEDs 1c to 1h by the current detection units 13c to 13h is performed in the same manner as the measurement of the forward current If of the LED 1b by the current detection unit 13b. The measurement results of the current detection units 13b to 13h are stored in a data holding unit such as an internal memory of the control unit 9.
　ステップＳ４３に続くステップＳ５３において、制御部９は、ステップＳ４３で求めた電流検出部１３ｂ～１３ｈの測定結果とステップＳ３３で求めたＬＥＤ１ａの差分値から、ＬＥＤ１ｂ～１ｈの暗黒時の順方向電流Ｉｆ＿ｄを求めて、求めたデータを内部メモリなどのデータ保持部に格納する。 In step S53 following step S43, the control unit 9 determines the forward current If_d in the dark of the LEDs 1b to 1h from the difference value between the LED 1a obtained in step S33 and the measurement result of the current detection units 13b to 13h obtained in step S43. And the obtained data is stored in a data holding unit such as an internal memory.
　ステップＳ５３に続くステップＳ６３において、制御部９は、ステップＳ２３で求めたＬＥＤ１ａの暗黒時の順方向電流Ｉｆ＿ｄ及びステップＳ５３で求めたＬＥＤ１ｂ～１ｈの暗黒時の順方向電流Ｉｆ＿ｄから、ＬＥＤ１ａ～１ｈのジャンクション温度を求めて、求めたデータを内部メモリなどのデータ保持部に格納する。 In step S63 following step S53, the control unit 9 determines the LED 1a to 1h based on the dark forward current If_d of the LED 1a obtained in step S23 and the dark forward current If_d of the LEDs 1b to 1h obtained in step S53. The junction temperature is obtained, and the obtained data is stored in a data holding unit such as an internal memory.
　ステップＳ７３～ステップＳ８３それぞれは、図３のステップＳ７０～ステップＳ８０それぞれと同一のステップであるため、ここでは説明を省略する。 Since steps S73 to S83 are the same as steps S70 to S80 in FIG. 3, the description thereof is omitted here.
　第５実施形態の光半導体照明装置は、電源オフ状態になるまで図１０に示す動作を継続して実行する。 The optical semiconductor lighting device of the fifth embodiment continuously performs the operation shown in FIG. 10 until the power is turned off.
　第５実施形態の光半導体照明装置も、第１～４実施形態の光半導体照明装置と同様の効果を奏する。ただし、電流検出部よりも電圧検出部の方が構成を簡単にすることができるため、第５実施形態の光半導体照明装置よりも第１～４実施形態の光半導体照明装置の方が好ましい。 The optical semiconductor lighting device of the fifth embodiment also has the same effects as the optical semiconductor lighting devices of the first to fourth embodiments. However, since the configuration of the voltage detection unit can be simplified compared to the current detection unit, the optical semiconductor illumination devices of the first to fourth embodiments are preferable to the optical semiconductor illumination device of the fifth embodiment.
＜用途＞
　上記した各実施形態の光半導体照明装置は、例えば、図１１及び図１２で示す通り、車両Ｘ１０のヘッドライト（ハイビーム／ロービーム／スモールランプ／フォグランプなどを適宜含　む）Ｘ１１、白昼夜走行（ＤＲＬ）用光源Ｘ１２、テールランプ（スモールランプやバックランプなどを適宜含む）Ｘ１３、ストップランプＸ１４、及び、ター　ンランプＸ１５などとして好適に用いることができる。白昼夜走行（ＤＲＬ）用光源Ｘ１２は、他のランプよりも外光の影響を受ける時間が長いため、本発明の適用が他のランプに比べてより一層好適である。 <Application>
For example, as shown in FIGS. 11 and 12, the optical semiconductor lighting device of each embodiment described above includes a headlight (including high beam / low beam / small lamp / fog lamp, etc.) X11 of the vehicle X10, daylight / night driving (DRL). ) Light source X12, tail lamp (including small lamp and back lamp as appropriate) X13, stop lamp X14, and turn lamp X15. The daylight / nighttime (DRL) light source X12 has a longer time to be affected by external light than other lamps, and therefore, the application of the present invention is more preferable than other lamps.
　上記した各実施形態の光半導体照明装置は、モジュール（図１３のＬＥＤヘッドライトモジュールＹ１０、図１４の　ＬＥＤターンランプモジュールＹ２０、及び、図１５のＬＥＤリアランプモジュールＹ３０など）として提供されるものであってもよいし、ＬＥＤ１ａ～１ｈ及び電流源や電圧源の一部として用いられる外付けコンデンサ等の外付け部品を除いた半製品であるＩＣ単体として提供されるものであってもよい。 The optical semiconductor lighting devices of the above-described embodiments are provided as modules (LED headlight module Y10 in FIG. 13, LED turn lamp module Y20 in FIG. 14, LED rear lamp module Y30 in FIG. 15, etc.). Alternatively, it may be provided as a single IC that is a semi-finished product excluding the LEDs 1a to 1h and external components such as external capacitors used as part of the current source and voltage source.
　なお、車両以外の移動体に設けられるランプとして、上記した各実施形態の光半導体照明装置を用いてもよい。例えば、航空機の主翼両端に設けられるランプとして、上記した各実施形態の光半導体照明装置を用いてもよい。 In addition, you may use the optical semiconductor illuminating device of each above-mentioned embodiment as a lamp provided in moving bodies other than a vehicle. For example, the optical semiconductor lighting devices of the above-described embodiments may be used as lamps provided at both ends of the main wing of an aircraft.
　他の用途では、図１６に示す信号機Ｚ１０に設けられるランプＺ１１～Ｚ１３として、上記した各実施形態の光半導体照明装置を用いてもよい。また、信号機の以外の屋外灯（例えば公園や街路に設置される屋外照明灯など）に設けられるランプとして、上記した各実施形態の光半導体照明装置を用いてもよい。 In other applications, the optical semiconductor lighting devices of the above-described embodiments may be used as the lamps Z11 to Z13 provided in the traffic light Z10 shown in FIG. Moreover, you may use the optical semiconductor illuminating device of each above-mentioned embodiment as a lamp | ramp provided in outdoor lights (for example, the outdoor illumination lamp etc. which are installed in a park or a street) other than a signal apparatus.
＜その他の変形例＞
　なお、本発明の構成は、上記実施形態のほか、発明の主旨を逸脱しない範囲で種々の変更を加えることが可能である。 <Other variations>
The configuration of the present invention can be variously modified in addition to the above-described embodiment without departing from the gist of the invention.
　例えば、上記実施形態では光半導体素子としてＬＥＤを用いたが、ＬＥＤ以外の光半導体素子（例えばレーザーダイオードなど）を用いてもよい。 For example, in the above embodiment, an LED is used as the optical semiconductor element, but an optical semiconductor element other than the LED (for example, a laser diode) may be used.
　また、上記第１～第４実施形態では、各定電流源の出力電流の値を同一にしたが、本発明はこれに限定されない。各定電流源の出力電流の値が異なる場合は、定電流源８の出力電流の値と他の定電流源の出力電流の値との相関関係を予め把握し、ＬＥＤの順方向電圧Ｖｆを求める際にその相関関係を反映させればよい。 In the first to fourth embodiments, the value of the output current of each constant current source is the same, but the present invention is not limited to this. When the output current value of each constant current source is different, the correlation between the output current value of the constant current source 8 and the output current value of another constant current source is grasped in advance, and the forward voltage Vf of the LED is determined. What is necessary is just to reflect the correlation when calculating | requiring.
　また、上記第５実施形態では、各定電圧源の出力電圧の値を同一にすることを前提としているが、本発明はこれに限定されない。各定電圧源の出力電圧の値が異なる場合は、定電圧源１６の出力電圧の値と他の定電圧源の出力電圧の値との相関関係を予め把握し、ＬＥＤの順方向電流Ｉｆを求める際にその相関関係を反映させればよい。 In the fifth embodiment, it is assumed that the output voltage value of each constant voltage source is the same, but the present invention is not limited to this. When the output voltage value of each constant voltage source is different, the correlation between the output voltage value of the constant voltage source 16 and the output voltage value of the other constant voltage source is grasped in advance, and the forward current If of the LED is calculated. What is necessary is just to reflect the correlation when calculating | requiring.
　また、上記第１～第５実施形態では、各ＬＥＤの特性が同一であることを前提としているが、本発明はこれに限定されない。各ＬＥＤの特性が異なる場合は、ＬＥＤ１ａの特性と他のＬＥＤの特性との相関関係を予め把握し、ＬＥＤの順方向電圧Ｖｆ、ＬＥＤの順方向電流Ｉｆ、ＬＥＤのジャンクション温度を求める際にその相関関係を反映させればよい。 In the first to fifth embodiments, it is assumed that the characteristics of each LED are the same, but the present invention is not limited to this. When the characteristics of each LED are different, the correlation between the characteristics of the LED 1a and the characteristics of the other LEDs is grasped in advance, and the LED forward voltage Vf, the LED forward current If, and the LED junction temperature are obtained. What is necessary is just to reflect a correlation.
　また、上記実施形態では、駆動電圧ＶＤの供給ライン側に電流源を配置し、グランド側にＬＥＤを配置したが、本発明はこれに限定されない。駆動電圧ＶＤの供給ライン側にＬＥＤを配置し、グランド側に電流源を配置してもよい。例えば、上記第１実施形態の光半導体照明装置に対して、駆動電圧ＶＤの供給ライン側にＬＥＤを配置し、グランド側に電流源を配置する変形を施した場合、図１７Ａに示すような構成になる。 In the above embodiment, the current source is arranged on the supply line side of the drive voltage V D, it has been disposed an LED on the ground side, the present invention is not limited thereto. The LED is disposed on the supply line side of the drive voltage V D, it may be arranged a current source to the ground side. For example, with respect to the optical semiconductor lighting apparatus of the first embodiment, the LED is arranged on the supply line side of the drive voltage V D, when subjected to deformation to place the current source to the ground, as shown in FIG. 17A It becomes a composition.
　図１７Ａに示す光半導体照明装置においても、ＬＥＤ１ａの近傍にダイオード６が配置される。そして、ダイオード６が近傍に配置されるＬＥＤ１ａは導電性の放熱パッドを有し、ＬＥＤ１ａの放熱パッドはダイオード６のカソード電極と電気的に接続されていることが望ましい。 Also in the optical semiconductor lighting device shown in FIG. 17A, the diode 6 is disposed in the vicinity of the LED 1a. The LED 1a in which the diode 6 is disposed in the vicinity has a conductive heat dissipation pad, and the heat dissipation pad of the LED 1a is preferably electrically connected to the cathode electrode of the diode 6.
　図１７Ｂは、図１７Ａに示す光半導体照明装置におけるＬＥＤ１ａとダイオード６の電極配置例を示す概略上面図である。ダイオード６の裏側にアノード電極６１とカソード電極６２とが形成されている。また、ダイオード６と図２Ｂに示す構造のＬＥＤ１ａとを実装する実装基板２０の表側に駆動電圧供給用パターン２２が形成されている。駆動電圧供給用パターン２２としては、電気抵抗が小さい銅箔等を用いるとよい。ＬＥＤ１ａの裏側アノード電極Ｌ９及び裏側放熱パッドＬ１１が駆動電圧供給用パターン２２によってダイオード６のアノード電極６１と電気的に接続されている。 FIG. 17B is a schematic top view showing an electrode arrangement example of the LED 1a and the diode 6 in the optical semiconductor lighting device shown in FIG. 17A. An anode electrode 61 and a cathode electrode 62 are formed on the back side of the diode 6. A driving voltage supply pattern 22 is formed on the front side of the mounting substrate 20 on which the diode 6 and the LED 1a having the structure shown in FIG. 2B are mounted. As the driving voltage supply pattern 22, it is preferable to use a copper foil or the like having a small electric resistance. The back side anode electrode L9 and the back side heat radiation pad L11 of the LED 1a are electrically connected to the anode electrode 61 of the diode 6 by the drive voltage supply pattern 22.
　図１７Ｂに示すように、ＬＥＤ１ａの裏側アノード電極Ｌ９と裏側放熱パッドＬ１１とは電気的に接続される。したがって、図２Ｂに示す構造の代わりに、図１７Ｃに示すように裏側アノード電極Ｌ９と裏側放熱パッドＬ１１とが繋がっている構造でもよく、図１７Ｄに示すように表側アノード電極Ｌ６と表側放熱パッドＬ８とが繋がっている構造でもよく、図１７Ｅに示すように裏側アノード電極Ｌ９と裏側放熱パッドＬ１１とが繋がっており表側アノード電極Ｌ６と表側放熱パッドＬ８とが繋がっている構造でもよい。 As shown in FIG. 17B, the back side anode electrode L9 of the LED 1a and the back side heat radiation pad L11 are electrically connected. Therefore, instead of the structure shown in FIG. 2B, a structure in which the back-side anode electrode L9 and the back-side heat dissipating pad L11 are connected as shown in FIG. 17C may be used, and a front-side anode electrode L6 and a front-side heat dissipating pad L8 are shown in FIG. The back side anode electrode L9 and the back side heat radiation pad L11 may be connected, and the front side anode electrode L6 and the front side heat dissipation pad L8 may be connected as shown in FIG. 17E.
　このように、上記実施形態は、全ての点で例示であって、制限的なものではないと考えられるべきであり、本発明の技術的範囲は、上記実施形態の説明ではなく、特許請求の範囲によって示されるものであり、特許請求の範囲と均等の意味及び範囲内に属する全ての変更が含まれると理解されるべきである。 As described above, the above embodiments are examples in all respects and should not be considered to be restrictive, and the technical scope of the present invention is not the description of the above embodiments, but the claims. It is to be understood that all changes that come within the scope of the claims, are equivalent in meaning to the claims, and fall within the scope of the claims.
　本発明は、例えば、移動体の各種ランプや屋外灯等で用いられる光半導体照明装置に適用することが可能である。 The present invention can be applied to, for example, an optical semiconductor illumination device used in various lamps, outdoor lights, and the like of mobile objects.
　　　１ａ～１ｈ　ＬＥＤ
　　　２ａ～２ｈ　可変電流源
　　　３ａ～３ｈ　スイッチ
　　　４ａ～４ｈ、７　電圧検出部
　　　５ａ～５ｈ、８　定電流源
　　　６　ダイオード
　　　９　制御部
　　　１０　サーミスター
　　　１１　シャッター駆動部
　　　１２　シャッター
　　　１３ａ～１３ｈ、１５　電流検出部
　　　１４ａ～１４ｈ、１６　定電圧源
　　　２０　実装基板
　　　２１　グランドパターン
　　　２２　駆動電圧供給用パターン
　　　Ｘ１０　車両
　　　Ｘ１１　ヘッドライト
　　　Ｘ１２　白昼夜走行（ＤＲＬ）用光源
　　　Ｘ１３　テールランプ
　　　Ｘ１４　ストップランプ
　　　Ｘ１５　ターンランプ
　　　Ｙ１０　ＬＥＤヘッドライトモジュール
　　　Ｙ２０　ＬＥＤターンランプモジュール
　　　Ｙ３０　ＬＥＤリアランプモジュール
　　　Ｚ１０　信号機
　　　Ｚ１１～Ｚ１３　ランプ 1a ~ 1h LED
2a to 2h Variable current source 3a to 3h Switch 4a to 4h, 7 Voltage detection unit 5a to 5h, 8 Constant current source 6 Diode 9 Control unit 10 Thermistor 11 Shutter drive unit 12 Shutter 13a to 13h, 15 Current detection unit 14a to 14h, 16 constant voltage source 20 mounting board 21 ground pattern 22 drive voltage supply pattern X10 vehicle X11 headlight X12 light source for day / night driving (DRL) X13 tail lamp X14 stop lamp X15 turn lamp Y10 LED headlight module Y20 LED turn lamp module Y30 LED rear lamp module Z10 Traffic light Z11 to Z13 Lamp

Claims (15)

  1. 　光半導体素子と、
    　少なくとも一つの他の光半導体素子と、
    　前記光半導体素子の順方向電圧を検出する第１検出部と、
    　前記光半導体素子の暗黒時の順方向電圧を検出する第２検出部と、
    　前記他の光半導体素子の順方向電圧それぞれを検出する第３検出部と、
    　第１検出部の検出結果と第２検出部の検出結果の差分及び第３検出部の検出結果に基づいて、前記他の光半導体素子の暗黒時の順方向電圧それぞれを検出する第４検出部と、
    　第２検出部の検出結果から前記光半導体素子のジャンクション温度を検出する第５検出部と、
    　第４検出部の検出結果から前記他の光半導体素子のジャンクション温度それぞれを検出する第６検出部と、
    　を有することを特徴とする光半導体照明装置。     An optical semiconductor element;
    At least one other optical semiconductor element;
    A first detector for detecting a forward voltage of the optical semiconductor element;
    A second detector for detecting a forward voltage in the dark of the optical semiconductor element;
    A third detector for detecting each forward voltage of the other optical semiconductor element;
    A fourth detection unit that detects each forward voltage in the dark of the other optical semiconductor element based on the difference between the detection result of the first detection unit and the detection result of the second detection unit and the detection result of the third detection unit. When,
    A fifth detector for detecting a junction temperature of the optical semiconductor element from a detection result of the second detector;
    A sixth detector for detecting each junction temperature of the other optical semiconductor element from the detection result of the fourth detector;
    An optical semiconductor lighting device comprising:
  2. 　第２検出部は、前記光半導体素子の近傍に配置され外光の影響を受けずに所定の物理量を出力するセンサを含み、前記センサの検出結果に基づいて前記光半導体素子の暗黒時の順方向電圧を検出する請求項１に記載の光半導体照明装置。 The second detection unit includes a sensor that is disposed in the vicinity of the optical semiconductor element and outputs a predetermined physical quantity without being affected by external light, and based on the detection result of the sensor, the order of the optical semiconductor element in the dark state. The optical semiconductor lighting device according to claim 1, wherein a direction voltage is detected.
  3. 　前記センサは、遮光性物質で封止されたダイオードであり、
    　第２検出部は、前記ダイオードの順方向電圧に基づいて前記光半導体素子の暗黒時の順方向電圧を検出する請求項２に記載の光半導体照明装置。     The sensor is a diode sealed with a light shielding material,
    The optical semiconductor illumination device according to claim 2, wherein the second detection unit detects a forward voltage in the dark of the optical semiconductor element based on a forward voltage of the diode.
  4. 　前記センサは、サーミスターであり、
    　第２検出部は、前記サーミスターによって検出された温度に基づいて前記光半導体素子の暗黒時の順方向電圧を検出する請求項２に記載の光半導体照明装置。     The sensor is a thermistor,
    The optical semiconductor lighting device according to claim 2, wherein the second detection unit detects a forward voltage in the dark of the optical semiconductor element based on the temperature detected by the thermistor.
  5. 　第２検出部は、前記光半導体素子に入射する外光を遮光可能な可動式遮光機構を含み、前記光半導体素子に入射する外光を前記可動式遮光機構によって遮光した状態で前記光半導体素子の暗黒時の順方向電圧を検出する請求項１に記載の光半導体照明装置。 The second detection unit includes a movable light shielding mechanism capable of shielding external light incident on the optical semiconductor element, and the optical semiconductor element in a state where the external light incident on the optical semiconductor element is shielded by the movable light shielding mechanism. The optical semiconductor lighting device according to claim 1, wherein a forward voltage in the dark is detected.
  6. 　光半導体素子と、
    　少なくとも一つの他の光半導体素子と、
    　前記光半導体素子の順方向電流を検出する第１検出部と、
    　前記光半導体素子の暗黒時の順方向電流を検出する第２検出部と、
    　前記他の光半導体素子の順方向電流それぞれを検出する第３検出部と、
    　第１検出部の検出結果と第２検出部の検出結果の差分及び第３検出部の検出結果に基づいて、前記他の光半導体素子の暗黒時の順方向電流それぞれを検出する第４検出部と、
    　第２検出部の検出結果から前記光半導体素子のジャンクション温度を検出する第５検出部と、
    　第４検出部の検出結果から前記他の光半導体素子のジャンクション温度それぞれを検出する第６検出部と、
    　を有することを特徴とする光半導体照明装置。     An optical semiconductor element;
    At least one other optical semiconductor element;
    A first detector for detecting a forward current of the optical semiconductor element;
    A second detector for detecting a forward current in the dark of the optical semiconductor element;
    A third detector for detecting a forward current of each of the other optical semiconductor elements;
    A fourth detector for detecting each forward current in the dark of the other optical semiconductor element based on the difference between the detection result of the first detector and the detection result of the second detector and the detection result of the third detector; When,
    A fifth detector for detecting a junction temperature of the optical semiconductor element from a detection result of the second detector;
    A sixth detector for detecting each junction temperature of the other optical semiconductor element from the detection result of the fourth detector;
    An optical semiconductor lighting device comprising:
  7. 　外部からの調光信号に応じてオンデューティ比が変化するＰＷＭ信号に応じて前記光半導体素子及び前記他の光半導体素子に流れる電流を調整する電流調整部を備え、
    　前記ＰＷＭ信号のオフ期間において、少なくとも第１検出部及び第３検出部が検出動作を行う請求項１～６のいずれか一項に記載の光半導体照明装置。     A current adjustment unit for adjusting a current flowing through the optical semiconductor element and the other optical semiconductor element according to a PWM signal whose on-duty ratio changes according to a dimming signal from the outside;
    The optical semiconductor lighting device according to any one of claims 1 to 6, wherein at least the first detection unit and the third detection unit perform a detection operation during an off period of the PWM signal.
  8. 　前記光半導体素子及び前記他の光半導体素子は、発光ダイオード、または、レーザーダイオードである請求項１～７のいずれか一項に記載の光半導体照明装置。 The optical semiconductor lighting device according to any one of claims 1 to 7, wherein the optical semiconductor element and the other optical semiconductor element are light emitting diodes or laser diodes.
  9. 　前記光半導体素子は、アノード電極、カソード電極、及び導電性の放熱パッドを有し、
    　前記アノード電極及び前記カソード電極のいずれか一方と前記放熱パッドと前記センサの一端が電気的に接続されている請求項８に記載の光半導体照明装置。     The optical semiconductor element has an anode electrode, a cathode electrode, and a conductive heat dissipation pad,
    The optical semiconductor lighting device according to claim 8, wherein one of the anode electrode and the cathode electrode, the heat dissipation pad, and one end of the sensor are electrically connected.
  10. 　前記光半導体素子は、
    　光半導体チップと、
    　前記光半導体チップの第１面と前記放熱パッドとに設けられる熱伝導ペーストと、
    　前記光半導体チップの前記第１面に対向する第２面に形成されているＰ型領域と前記アノード電極とを電気的に接続する第１接続部材と、
    　前記光半導体チップの前記第２面に形成されているＮ型領域と前記カソード電極とを電気的に接続する第２接続部材と、
    　を有する請求項９に記載の光半導体照明装置。     The optical semiconductor element is:
    An optical semiconductor chip;
    A heat conductive paste provided on the first surface of the optical semiconductor chip and the heat dissipating pad;
    A first connection member that electrically connects a P-type region formed on a second surface of the optical semiconductor chip opposite to the first surface and the anode electrode;
    A second connecting member that electrically connects the N-type region formed on the second surface of the optical semiconductor chip and the cathode electrode;
    The optical semiconductor lighting device according to claim 9.
  11. 　前記放熱パッドは、前記第１面及び前記第２面の法線方向から視て前記アノード電極と前記カソード電極との間に配置される請求項１０に記載の光半導体照明装置。 11. The optical semiconductor lighting device according to claim 10, wherein the heat dissipating pad is disposed between the anode electrode and the cathode electrode when viewed from the normal direction of the first surface and the second surface.
  12. 　少なくとも前記光半導体素子及び前記センサを実装する基板を有し、
    　前記カソード電極及び前記放熱パッドが前記基板に形成されるグランドパターンによって前記センサの一端と電気的に接続されている請求項９～１１のいずれか一項に記載の光半導体照明装置。     Having at least a substrate on which the optical semiconductor element and the sensor are mounted;
    The optical semiconductor lighting device according to any one of claims 9 to 11, wherein the cathode electrode and the heat dissipation pad are electrically connected to one end of the sensor by a ground pattern formed on the substrate.
  13. 　少なくとも前記光半導体素子及び前記センサを実装する基板を有し、
    　前記アノード電極及び前記放熱パッドが前記基板に形成される駆動電圧供給用パターンによって前記センサの一端と電気的に接続されている請求項９～１１のいずれか一項に記載の光半導体照明装置。     Having at least a substrate on which the optical semiconductor element and the sensor are mounted;
    The optical semiconductor lighting device according to any one of claims 9 to 11, wherein the anode electrode and the heat dissipation pad are electrically connected to one end of the sensor by a drive voltage supply pattern formed on the substrate.
  14. 　請求項１～１３のいずれか一項に記載の光半導体照明装置を備えることを特徴とする移動体。 A moving body comprising the optical semiconductor lighting device according to any one of claims 1 to 13.
  15. 　請求項１～１３のいずれか一項に記載の光半導体照明装置を備えることを特徴とする屋外灯。 An outdoor lamp comprising the optical semiconductor lighting device according to any one of claims 1 to 13.
PCT/JP2016/081876 2015-10-27 2016-10-27 Optical semiconductor illumination device WO2017073662A1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004330927A (en) * 2003-05-08 2004-11-25 Koito Mfg Co Ltd Lighting fixture for vehicle
JP2008518389A (en) * 2004-10-22 2008-05-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Method for driving an illumination device using LEDs
JP2014049255A (en) * 2012-08-30 2014-03-17 Koito Electric Industries Ltd Led light flux control device, and road illuminating device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004330927A (en) * 2003-05-08 2004-11-25 Koito Mfg Co Ltd Lighting fixture for vehicle
JP2008518389A (en) * 2004-10-22 2008-05-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Method for driving an illumination device using LEDs
JP2014049255A (en) * 2012-08-30 2014-03-17 Koito Electric Industries Ltd Led light flux control device, and road illuminating device

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