WO2017049253A1 - Methods for depositing conformal bcn films - Google Patents
Methods for depositing conformal bcn films Download PDFInfo
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- WO2017049253A1 WO2017049253A1 PCT/US2016/052386 US2016052386W WO2017049253A1 WO 2017049253 A1 WO2017049253 A1 WO 2017049253A1 US 2016052386 W US2016052386 W US 2016052386W WO 2017049253 A1 WO2017049253 A1 WO 2017049253A1
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- Prior art keywords
- film
- borocarbide
- processing method
- substrate
- hydrogen
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000000151 deposition Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 68
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910000085 borane Inorganic materials 0.000 claims abstract description 45
- 239000002243 precursor Substances 0.000 claims abstract description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052796 boron Inorganic materials 0.000 claims abstract description 24
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 20
- 239000001257 hydrogen Substances 0.000 claims abstract description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 16
- 125000003118 aryl group Chemical group 0.000 claims abstract description 7
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims abstract description 6
- 125000006725 C1-C10 alkenyl group Chemical group 0.000 claims abstract description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 23
- 238000003672 processing method Methods 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 12
- 239000000376 reactant Substances 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 150000001721 carbon Chemical group 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 8
- 150000002431 hydrogen Chemical group 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 6
- 125000004430 oxygen atom Chemical group O* 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- UORVGPXVDQYIDP-BJUDXGSMSA-N borane Chemical class [10BH3] UORVGPXVDQYIDP-BJUDXGSMSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- -1 B-C Inorganic materials 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910008423 Si—B Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
Definitions
- Embodiments of the disclosure generally relate to methods of forming borocarbide films. More particularly, embodiments of the disclosure relate to methods of forming borocarbide, borocarbonitride and/or boronitride films.
- the elements can form B-C-N materials with many useful properties.
- materials can be formed with high hardness, high temperature stability, increased reactive ion etching (RIE) selectivity and/or increased solvent etchant resistivity.
- RIE reactive ion etching
- Efforts have been focused on diamond-like carbon (DLC), boron carbide and boron nitride films.
- DLC diamond-like carbon
- boron carbide boron nitride films
- ternary compounds such as BCN.
- One or more embodiments of the disclosure are directed to processing methods comprising exposing a substrate surface comprising substantially no boron to a borane precursor in a processing chamber at a temperature in the range of about 300 Q C to about 550 Q C to form a borocarbide film.
- Additional embodiments of the disclosure are directed to processing methods comprising positioning a substrate having a surface in a processing chamber.
- the surface of the substrate is exposed to a borane precursor at a temperature in the range of about 300 Q C to about 550 Q C to form a borocarbide film.
- the borane precursor comprises a compound with the general formula NHR 2 BH 3 , where each R is independently selected from the group consisting of hydrogen, C1 - C10 alkyl groups, C1 -C10 alkenyl groups and aryl groups with the proviso that at least one of the R groups comprises a carbon atom.
- Further embodiments of the disclosure are directed to processing methods comprising positioning a substrate having a surface comprising substantially no boron in a processing chamber.
- the surface has at least one feature thereon.
- the surface of the substrate is exposed to a borane precursor and an optional co-reactant at a temperature in the range of about 300 Q C to about 550 Q C to form a conformal hardmask comprising a borocarbide film on the at least one feature.
- the borane precursor comprises NH(CH 3 ) 2 BH 3 .
- the co-reactant is selected from the group consisting of hydrogen, B 2 H 6 , CH 4 , C 2 H 2 , C 3 H 6 , NH 3 and combinations thereof.
- substrate and “wafer” are used interchangeably, both referring to a surface, or portion of a surface, upon which a process acts. It will also be understood by those skilled in the art that reference to a substrate can also refer to only a portion of the substrate, unless the context clearly indicates otherwise.
- substrate and “wafer” are used interchangeably, both referring to a thin piece of material having a surface, or portion of a surface, upon which a process acts. It will also be understood by those skilled in the art that reference to a substrate can also refer to only a portion of the substrate, unless the context clearly indicates otherwise. Additionally, reference to depositing on a substrate can mean both a bare substrate and a substrate with one or more films or features deposited or formed thereon.
- a "substrate surface” as used herein, refers to an exposed face of any substrate or material surface formed on a substrate upon which film processing is performed during a fabrication process.
- a substrate surface on which processing can be performed include materials such as silicon, silicon oxide, strained silicon, silicon on insulator (SOI), carbon doped silicon oxides, silicon nitride, silicon carbide, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal carbides, metal alloys, and other conductive materials, depending on the application.
- Substrates include, without limitation, semiconductor and insulating wafers, which may or may not have been further processed to produce electronic and/or optoelectronic devices. Substrates may be exposed to a pretreatment process to clean, polish, etch, reduce, oxidize, hydroxylate, anneal and/or bake the substrate surface. In addition to film processing directly on the surface of the substrate itself, in the embodiments of the present disclosure any of the film processing steps disclosed may also be performed on an underlayer formed on the substrate as disclosed in more detail below, and the term "substrate surface" is predetermined to include such underlayer(s) as the context indicates, for example vias passing through thin semiconducting and/or insulating layers on an SOI wafer.
- Substrates for use with the embodiments of the disclosure can be any suitable substrate.
- the substrate is a rigid, discrete, generally planar substrate.
- the term "discrete" when referring to a substrate means that the substrate has a fixed dimension.
- the substrate of one or more embodiments is a semiconductor substrate, such as a 200 mm or 300 mm diameter silicon substrate.
- the substrate is one or more of silicon, silicon germanium, gallium arsenide, gallium nitride, germanium, gallium phosphide, indium phosphide, sapphire and silicon carbide.
- the substrate surface comprises substantially no boron.
- substantially no boron means that there is less than about 1 % on an atomic basis of boron atoms on to the surface to a depth of about 10 A.
- the substrate surface consists essentially of silicon, carbon and oxygen atoms.
- the term "consists essentially of silicon carbon and oxygen atoms” means that the substrate surface, to a depth of about 10 A, comprises greater than or equal to about 99% silicon, carbon and oxygen atoms, in total.
- the substrate surface consists essentially of silicon, carbon, hydrogen and oxygen atoms.
- the term "consists essentially of silicon, carbon, hydrogen and oxygen atoms” means that the substrate surface, to a depth of about 10 A, comprises greater than or equal to about 99% silicon, carbon, hydrogen and oxygen atoms, in total.
- Embodiments of the disclosure are directed to processes to deposit borocarbide, borocarbonitride and similar films. Some embodiments of the disclosure provide films that are formed at relatively low temperatures, allowing preservation of the thermal budget during device formation. Some embodiments of the disclosure provide films with excellent conformality greater than or equal to about 98%.
- borocarbide refers to a film comprising boron and carbon.
- the borocarbide film consists essentially of boron and carbon, meaning that boron and carbon make up at least about 80 atomic % of the film.
- the borocarbide film can comprise nitrogen and/or hydrogen.
- the borocarbide film consists essentially of boron, carbon and optionally, hydrogen atoms.
- the borocarbide film is a borocarbonitride film.
- borocarbonitride refers to a film comprising boron, carbon and nitrogen.
- the borocarbonitride film consists essentially of boron, carbon and nitrogen, meaning that boron, carbon and nitrogen make up at least about 80 atomic % of the film.
- the borocarbonitride film consists essentially of boron, carbon, nitrogen, and optionally, hydrogen atoms.
- the borocarbide film comprises hydrogen in addition to boron, carbon and, optionally, nitrogen.
- the hydrogen content of the film can be up to about 20 atomic %, 15 atomic %, 10 atomic %, 5 atomic % or 2 atomic %.
- the borane precursor can comprise any suitable borane compounds that can decompose at a temperature less than about 550 Q C.
- the borane precursor comprises a compound with the general formula NHR 2 BH 3 .
- each R group is independently selected from the group consisting of hydrogen, C1 -C10 alkyl groups, C1 -C1 0 alkenyl groups and aryl groups.
- at least one of the R groups comprises a carbon atom.
- the borane precursor comprises NH(CH 3 ) 2 BH 3 .
- the borane precursor comprises a compound of the general formula NHR 2 BH 3 , where each R group is independently selected from the group consisting of C1 -C10 alkyl groups, C1 -C10 akenyl groups and aryl groups so that there is one hydrogen atom bonded to the nitrogen atom.
- the borane precursor has a general formula of NH 2 RBH 3 , where R is selected from the group consisting of C1 -C10 alkyl, C1 -C10 alkenyl and aryl groups so that there are two hydrogen atoms bonded to the nitrogen atom.
- the temperature at which the borocarbide film is formed in the range of about 300 Q C to about 550 Q C to form a borocarbide film. In one or more embodiments, the temperature at which the borocarbide film forms is less than or equal to about 550 Q C, or less than or equal to about 525 Q C, or less than or equal to about 500 Q C, or less than or equal to about 475 Q C, or less than or equal to about 450 Q C, or less than or equal to about 425 Q C, or less than or equal to about 400 Q C.
- a substrate is positioned within a processing chamber and the borane precursor is flowed into the processing chamber to react with the substrate surface.
- the borane precursor is flowed into the processing chamber with or without a carrier gas.
- a carrier gas is a gas that does not react with either the borane precursor or the substrate surface.
- the borocarbide film of some embodiments forms by thermal decomposition of the borane precursor.
- the temperature of the substrate surface is elevated and a relatively cool borane precursor is flowed into the processing chamber.
- the borane precursor decomposes on the relatively hot substrate surface to form the borocarbide film.
- the thermal decomposition occurs without a catalyst or plasma enhancement.
- the borane precursor is flowed into the processing chamber with a co-reactant.
- the co-reactant is selected from the group consisting of hydrogen, B 2 H 6 , CH 4 , C 2 H 2 , C 3 H 6 , NH 3 and combinations thereof.
- the co-reactant increases the atomic percentage of one or more of boron, carbon, nitrogen or hydrogen in the borocarbide film.
- the co-reactant can be mixed with the borane precursor before flowing into the processing chamber or mixed with the borane precursor within the processing chamber.
- the borane precursor is exposed to a plasma in processing chamber to form the borocarbide film.
- the plasma can be a direct plasma which is ignited within the processing chamber immediately adjacent the substrate surface or can be a remote plasma which is ignited outside of the processing chamber and flowed into the processing region adjacent the substrate surface.
- the plasma comprises one or more of hydrogen, nitrogen, helium or argon.
- the borocarbide film is formed conformally on the substrate surface without a plasma.
- the borocarbide film formed by one or more embodiments of the disclosure are substantially uniform in composition throughout the thickness of the film.
- substantially uniform means that the atomic composition of the film near the top of the film is about the same as the atomic composition of the film near the bottom of the film and in between.
- the interface between the substrate surface and the borocarbide film and the interface beween the borocarbide film and any component on top of the film may have slightly different compositions than the bulk portion of the film due to, for example, atomic migration.
- the substrate surface comprises at least one feature thereon.
- a feature can be a trench or a peak.
- Features generally include at least one "vertical" surface and either a top or bottom "horizontal" surface.
- a vertical surface is one that extends at an angle to the substrate surface in the range of about 70 Q to about 1 10 Q , with a surface normal measured at 90 Q .
- a horizontal surface is one that extends at an angle to the normal of the substrate in the range of about 0 Q to about 20 Q .
- the borocarbide film forms conformally on at least one feature.
- the term “conformal”, or “conformally”, refers to a layer that adheres to and uniformly covers exposed surfaces with a thickness having a variation of less than 1 % relative to the average thickness of the film. For example, a 1 ,000 A thick film would have less than 1 0 A variations in thickness. This thickness and variation includes edges, corners, sides, and the bottom of recesses.
- a conformal layer deposited by ALD in various embodiments of the disclosure would provide coverage over the deposited region of essentially uniform thickness on complex surfaces.
- continuous refers to a layer that covers an entire exposed surface without gaps or bare spots that reveal material underlying the deposited layer.
- a continuous layer may have gaps or bare spots with a surface area less than about 1 % of the total surface area of the film.
- the borocarbide film of some embodiments is substantially transparent to light at a predetermined wavelength.
- substantially transparent means that the film absorbs less than about 1 0% or 5% of light at the predetermined wavelength.
- the predetermined wavelength can be any suitable wavelength of light that is used to interact with any film formed beneath the borocarbide film.
- the borocarbide film is formed as a hardmask and is resistant to etching.
- resistant to etching means that the film has an SiO or a-Si dry etch selectivity by reactive ion etch (RIE) of greater than 100 or a wet etch rate in dilute HF of less than about 2 A/min.
- RIE reactive ion etch
- the method further comprises irradiating the substrate surface through the borocarbide film using light of a wavelength to which the borocarbide film is substantially transparent. In one or more embodiments, the method further comprises removing the hardmask after irradiating the substrate surface beneath the borocarbide film.
- B-C-N films were deposited by thermal CVD process using dimethylamine borane [NH(CH 3 ) 2 BH 3 ] (DMAB).
- DMAB dimethylamine borane
- UHP ultrahigh purity
- the hot can temperature ranged from room temperature to about 150 Q C.
- the Ar carrier gas flow ranged from 100 seem to 20000 seem.
- To control the elemental composition of the B-C-N film NH 3 , H 2 , C 3 H 6 co- reactant gases were delivered to the CVD chamber.
- the chamber temperature ranged from 300 Q C to 550 Q C.
- the processing chamber pressure ranged from 100 mTorr to 100 Torr.
- the B-C-N film was deposited on a silicon wafer.
- the film properties of the B-C-N film were characterized by ellipsometer, XPS and/or RBS/HFS.
- the Rl/633nm of the film was 2.2 and K/633nm was 0.0087.
- the composition analysis shows that the boron concentration ranged from 35% to 60% on an atomic basis.
- the carbon concentration ranged from 8% to 37% on an atomic basis.
- the nitrogen concentration ranged from 9% to 42% on an atomic basis.
- FTIR spectrum of the borocarbonitride film showed B-B, B-C, B-N, B-H bonds were in the film.
- the DMAB decomposes on the substrate wafer first and generates BH 3 and DMA.
- the BH 3 reacts with Si and forms Si-B bonds.
- the remaining B-H bonds react with B, C, and N-species and form B-B, B-C and C-N bonds.
- Table 1 lists the etching ratio for a layer below the hardmask, normalized to the etch rate of the hard mask. Table 1 .
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Abstract
Methods for forming a borocarbide film on a substrate surface by exposing the substrate surface to a borane precursor. The borocarbide film optionally comprising nitrogen and/or hydrogen. The borocarbide film can be deposited onto a surface that comprises substantially no boron. The borane precursor can include compound having the general formula NHR2BH3, where each R is independently selected from the group consisting of hydrogen, C1-C10 alkyl groups, C1-C10 alkenyl groups and aryl groups.
Description
METHODS FOR DEPOSITING CONFORMAL BCN FILMS
FIELD
[0001] Embodiments of the disclosure generally relate to methods of forming borocarbide films. More particularly, embodiments of the disclosure relate to methods of forming borocarbide, borocarbonitride and/or boronitride films.
BACKGROUND
[0002] As a result of strong covalent bonding, the elements: boron, carbon and nitrogen can form B-C-N materials with many useful properties. For example, materials can be formed with high hardness, high temperature stability, increased reactive ion etching (RIE) selectivity and/or increased solvent etchant resistivity. Efforts have been focused on diamond-like carbon (DLC), boron carbide and boron nitride films. There have also been investigations focused on ternary compounds such as BCN.
[0003] The conventional processes use high temperature chemical vapor deposition (CVD) at temperatures greater than about 550QC or plasma enhanced CVD. However, high temperature limits the application of such films and plasma processing reduces the conformality of the film due to the distribution of the plasma.
[0004] Therefore, there is a need in the art for methods of forming films at low temperatures with good conformality and etch selectivity. SUMMARY
[0005] One or more embodiments of the disclosure are directed to processing methods comprising exposing a substrate surface comprising substantially no boron to a borane precursor in a processing chamber at a temperature in the range of about 300QC to about 550QC to form a borocarbide film.
[0006] Additional embodiments of the disclosure are directed to processing methods comprising positioning a substrate having a surface in a processing chamber. The surface of the substrate is exposed to a borane precursor at a temperature in the range of about 300QC to about 550QC to form a borocarbide film.
The borane precursor comprises a compound with the general formula NHR2BH3, where each R is independently selected from the group consisting of hydrogen, C1 - C10 alkyl groups, C1 -C10 alkenyl groups and aryl groups with the proviso that at least one of the R groups comprises a carbon atom.
[0007] Further embodiments of the disclosure are directed to processing methods comprising positioning a substrate having a surface comprising substantially no boron in a processing chamber. The surface has at least one feature thereon. The surface of the substrate is exposed to a borane precursor and an optional co-reactant at a temperature in the range of about 300QC to about 550QC to form a conformal hardmask comprising a borocarbide film on the at least one feature. The borane precursor comprises NH(CH3)2BH3. The co-reactant is selected from the group consisting of hydrogen, B2H6, CH4, C2H2, C3H6, NH3 and combinations thereof.
DETAILED DESCRIPTION
[0008] As used in this specification and the appended claims, the term "substrate" and "wafer" are used interchangeably, both referring to a surface, or portion of a surface, upon which a process acts. It will also be understood by those skilled in the art that reference to a substrate can also refer to only a portion of the substrate, unless the context clearly indicates otherwise.
[0009] Reference throughout this specification to "one embodiment," "certain embodiments," "various embodiments," "one or more embodiments" or "an embodiment" means that a particular feature, structure, material, or characteristic described in connection with the embodiment may be included in at least one embodiment of the disclosure. Furthermore, the appearances of the phrases such as "in one or more embodiments," "in certain embodiments," "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily referring to the same embodiment of the disclosure. In addition, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments.
[0010] As used in this specification and the appended claims, the terms "substrate" and "wafer" are used interchangeably, both referring to a thin piece of material having
a surface, or portion of a surface, upon which a process acts. It will also be understood by those skilled in the art that reference to a substrate can also refer to only a portion of the substrate, unless the context clearly indicates otherwise. Additionally, reference to depositing on a substrate can mean both a bare substrate and a substrate with one or more films or features deposited or formed thereon.
[0011] A "substrate surface" as used herein, refers to an exposed face of any substrate or material surface formed on a substrate upon which film processing is performed during a fabrication process. For example, a substrate surface on which processing can be performed include materials such as silicon, silicon oxide, strained silicon, silicon on insulator (SOI), carbon doped silicon oxides, silicon nitride, silicon carbide, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal carbides, metal alloys, and other conductive materials, depending on the application. Substrates include, without limitation, semiconductor and insulating wafers, which may or may not have been further processed to produce electronic and/or optoelectronic devices. Substrates may be exposed to a pretreatment process to clean, polish, etch, reduce, oxidize, hydroxylate, anneal and/or bake the substrate surface. In addition to film processing directly on the surface of the substrate itself, in the embodiments of the present disclosure any of the film processing steps disclosed may also be performed on an underlayer formed on the substrate as disclosed in more detail below, and the term "substrate surface" is predetermined to include such underlayer(s) as the context indicates, for example vias passing through thin semiconducting and/or insulating layers on an SOI wafer.
[0012] Substrates for use with the embodiments of the disclosure can be any suitable substrate. In some embodiments, the substrate is a rigid, discrete, generally planar substrate. As used in this specification and the appended claims, the term "discrete" when referring to a substrate means that the substrate has a fixed dimension. The substrate of one or more embodiments is a semiconductor substrate, such as a 200 mm or 300 mm diameter silicon substrate. In some embodiments, the substrate is one or more of silicon, silicon germanium, gallium arsenide, gallium nitride, germanium, gallium phosphide, indium phosphide, sapphire and silicon carbide.
[0013] Some embodiments of the disclosure advantageously provide methods of forming a borocarbide film on a substrate surface without a boron containing underlayer. In some embodiments, the substrate surface comprises substantially no boron. As used in this regard, the term "substantially no boron" means that there is less than about 1 % on an atomic basis of boron atoms on to the surface to a depth of about 10 A. In some embodiments, the substrate surface consists essentially of silicon, carbon and oxygen atoms. As used in this regard, the term "consists essentially of silicon carbon and oxygen atoms" means that the substrate surface, to a depth of about 10 A, comprises greater than or equal to about 99% silicon, carbon and oxygen atoms, in total. In some embodiments, the substrate surface consists essentially of silicon, carbon, hydrogen and oxygen atoms. As used in this regard, the term "consists essentially of silicon, carbon, hydrogen and oxygen atoms" means that the substrate surface, to a depth of about 10 A, comprises greater than or equal to about 99% silicon, carbon, hydrogen and oxygen atoms, in total.
[0014] Embodiments of the disclosure are directed to processes to deposit borocarbide, borocarbonitride and similar films. Some embodiments of the disclosure provide films that are formed at relatively low temperatures, allowing preservation of the thermal budget during device formation. Some embodiments of the disclosure provide films with excellent conformality greater than or equal to about 98%.
[0015] Some embodiments of the disclosure are directed to processing methods in which a substrate surface is exposed to a borane precursor at low temperature to form a borocarbide film. As used in this specification and the appended claims, the term "borocarbide" refers to a film comprising boron and carbon. In some embodiments, the borocarbide film consists essentially of boron and carbon, meaning that boron and carbon make up at least about 80 atomic % of the film. The borocarbide film can comprise nitrogen and/or hydrogen. In some embodiments, the borocarbide film consists essentially of boron, carbon and optionally, hydrogen atoms.
[0016] In some embodiments, the borocarbide film is a borocarbonitride film. As used in this specification and the appended claims, the term "borocarbonitride" refers to a film comprising boron, carbon and nitrogen. In some embodiments, the borocarbonitride film consists essentially of boron, carbon and nitrogen, meaning that
boron, carbon and nitrogen make up at least about 80 atomic % of the film. In some embodiments, the borocarbonitride film consists essentially of boron, carbon, nitrogen, and optionally, hydrogen atoms.
[0017] In some embodiments, the borocarbide film comprises hydrogen in addition to boron, carbon and, optionally, nitrogen. The hydrogen content of the film can be up to about 20 atomic %, 15 atomic %, 10 atomic %, 5 atomic % or 2 atomic %.
[0018] The borane precursor can comprise any suitable borane compounds that can decompose at a temperature less than about 550QC. In some embodiments, the borane precursor comprises a compound with the general formula NHR2BH3. In some embodiments, each R group is independently selected from the group consisting of hydrogen, C1 -C10 alkyl groups, C1 -C1 0 alkenyl groups and aryl groups. In one or more embodiments, at least one of the R groups comprises a carbon atom. In some embodiments, the borane precursor comprises NH(CH3)2BH3. In one or more embodiments, the borane precursor comprises a compound of the general formula NHR2BH3, where each R group is independently selected from the group consisting of C1 -C10 alkyl groups, C1 -C10 akenyl groups and aryl groups so that there is one hydrogen atom bonded to the nitrogen atom. In some embodiments, the borane precursor has a general formula of NH2RBH3, where R is selected from the group consisting of C1 -C10 alkyl, C1 -C10 alkenyl and aryl groups so that there are two hydrogen atoms bonded to the nitrogen atom.
[0019] In some embodiments, the temperature at which the borocarbide film is formed in the range of about 300QC to about 550QC to form a borocarbide film. In one or more embodiments, the temperature at which the borocarbide film forms is less than or equal to about 550QC, or less than or equal to about 525QC, or less than or equal to about 500QC, or less than or equal to about 475QC, or less than or equal to about 450QC, or less than or equal to about 425QC, or less than or equal to about 400QC.
[0020] In use, a substrate is positioned within a processing chamber and the borane precursor is flowed into the processing chamber to react with the substrate surface. In some embodiments, the borane precursor is flowed into the processing chamber with
or without a carrier gas. As used in this regard, a carrier gas is a gas that does not react with either the borane precursor or the substrate surface.
[0021] The borocarbide film of some embodiments forms by thermal decomposition of the borane precursor. In one or more embodiments, the temperature of the substrate surface is elevated and a relatively cool borane precursor is flowed into the processing chamber. The borane precursor decomposes on the relatively hot substrate surface to form the borocarbide film. In one or more embodiments, the thermal decomposition occurs without a catalyst or plasma enhancement.
[0022] In some embodiments, the borane precursor is flowed into the processing chamber with a co-reactant. The co-reactant is selected from the group consisting of hydrogen, B2H6, CH4, C2H2, C3H6, NH3 and combinations thereof. In some embodiments, the co-reactant increases the atomic percentage of one or more of boron, carbon, nitrogen or hydrogen in the borocarbide film. The co-reactant can be mixed with the borane precursor before flowing into the processing chamber or mixed with the borane precursor within the processing chamber.
[0023] In some embodiments, the borane precursor is exposed to a plasma in processing chamber to form the borocarbide film. The plasma can be a direct plasma which is ignited within the processing chamber immediately adjacent the substrate surface or can be a remote plasma which is ignited outside of the processing chamber and flowed into the processing region adjacent the substrate surface. In some embodiments, the plasma comprises one or more of hydrogen, nitrogen, helium or argon. In some embodiments, the borocarbide film is formed conformally on the substrate surface without a plasma.
[0024] The borocarbide film formed by one or more embodiments of the disclosure are substantially uniform in composition throughout the thickness of the film. As used in this regard, the term substantially uniform means that the atomic composition of the film near the top of the film is about the same as the atomic composition of the film near the bottom of the film and in between. Those skilled in the art will understand that the interface between the substrate surface and the borocarbide film and the interface beween the borocarbide film and any component on top of the film may have
slightly different compositions than the bulk portion of the film due to, for example, atomic migration.
[0025] In some embodiments, the substrate surface comprises at least one feature thereon. A "feature" as used in this specification and the appended claims, refers to any non-flat portions of a substrate. For example, a feature can be a trench or a peak. Features generally include at least one "vertical" surface and either a top or bottom "horizontal" surface. A vertical surface is one that extends at an angle to the substrate surface in the range of about 70Q to about 1 10Q, with a surface normal measured at 90Q. A horizontal surface is one that extends at an angle to the normal of the substrate in the range of about 0Q to about 20Q.
[0026] In one or more embodiments, the borocarbide film forms conformally on at least one feature. As used herein, the term "conformal", or "conformally", refers to a layer that adheres to and uniformly covers exposed surfaces with a thickness having a variation of less than 1 % relative to the average thickness of the film. For example, a 1 ,000 A thick film would have less than 1 0 A variations in thickness. This thickness and variation includes edges, corners, sides, and the bottom of recesses. For example, a conformal layer deposited by ALD in various embodiments of the disclosure would provide coverage over the deposited region of essentially uniform thickness on complex surfaces.
[0027] As used herein, the term "continuous" refers to a layer that covers an entire exposed surface without gaps or bare spots that reveal material underlying the deposited layer. A continuous layer may have gaps or bare spots with a surface area less than about 1 % of the total surface area of the film.
[0028] The borocarbide film of some embodiments is substantially transparent to light at a predetermined wavelength. As used in this specification and the appended claims, the term "substantially transparent" means that the film absorbs less than about 1 0% or 5% of light at the predetermined wavelength. The predetermined wavelength can be any suitable wavelength of light that is used to interact with any film formed beneath the borocarbide film.
[0029] In some embodiments, the borocarbide film is formed as a hardmask and is resistant to etching. As used in this specification and the appended claims, the term
"resistant to etching" means that the film has an SiO or a-Si dry etch selectivity by reactive ion etch (RIE) of greater than 100 or a wet etch rate in dilute HF of less than about 2 A/min.
[0030] In some embodiments, the method further comprises irradiating the substrate surface through the borocarbide film using light of a wavelength to which the borocarbide film is substantially transparent. In one or more embodiments, the method further comprises removing the hardmask after irradiating the substrate surface beneath the borocarbide film.
[0031] Examples
[0032] Borocarbonitride (B-C-N) films were deposited by thermal CVD process using dimethylamine borane [NH(CH3)2BH3] (DMAB). The DMAB was heated in a hot can to increase the vapor pressure and was delivered to a processing chamber using ultrahigh purity (UHP) Ar carrier gas. The hot can temperature ranged from room temperature to about 150QC. The Ar carrier gas flow ranged from 100 seem to 20000 seem. To control the elemental composition of the B-C-N film, NH3, H2, C3H6 co- reactant gases were delivered to the CVD chamber. The chamber temperature ranged from 300QC to 550QC. The processing chamber pressure ranged from 100 mTorr to 100 Torr. The B-C-N film was deposited on a silicon wafer.
[0033] The film properties of the B-C-N film were characterized by ellipsometer, XPS and/or RBS/HFS. The Rl/633nm of the film was 2.2 and K/633nm was 0.0087. The composition analysis shows that the boron concentration ranged from 35% to 60% on an atomic basis. The carbon concentration ranged from 8% to 37% on an atomic basis. The nitrogen concentration ranged from 9% to 42% on an atomic basis. FTIR spectrum of the borocarbonitride film showed B-B, B-C, B-N, B-H bonds were in the film.
[0034] Without being bound by any particular theory of operation, it is believed that the DMAB decomposes on the substrate wafer first and generates BH3 and DMA. The BH3 reacts with Si and forms Si-B bonds. The remaining B-H bonds react with B, C, and N-species and form B-B, B-C and C-N bonds. Table 1 lists the etching ratio for a layer below the hardmask, normalized to the etch rate of the hard mask.
Table 1 .
Film Relative Etch Rate
Carbon Hard Mask 1 .00
SiO 1 .91
SiN 2.31
a-Si 2.80
SiB 3.1 5
[0035] It can be seen from Table 1 that the relative etch rate of the silicon boride film is greater than the relative etch rates of amorphous silicon, silicon oxide or silicon nitride films.
[0036] While the foregoing is directed to embodiments of the present invention, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims
1 . A processing method comprising exposing a substrate surface to a borane precursor in a processing chamber at a temperature in the range of about 300QC to about 550QC to form a borocarbide film, wherein the substrate surface comprises substantially no boron.
2. A processing method comprising:
positioning a substrate having a surface in a processing chamber;
exposing the surface of the substrate to a borane precursor at a temperature in the range of about 300QC to about 550QC to form a borocarbide film, the borane precursor comprising a compound with the general formula NHR2BH3, where each R is independently selected from the group consisting of hydrogen, C1 -C1 0 alkyl groups, C1 -C10 alkenyl groups and aryl groups with the proviso that at least one of the R groups comprises a carbon atom.
3. The processing method of claim 1 , wherein the borane precursor comprises a compound with the general formula NHR2BH3, where each R is independently selected from the group consisting of hydrogen, C1 -C10 alkyl groups, C1 -C10 alkenyl groups and aryl groups.
4. The processing method of claim 3, wherein at least one of the R groups comprises a carbon atom.
5. The processing method of any of claims 1 to 4, wherein the borocarbide film consists essentially of boron, carbon and optionally, hydrogen atoms.
6. The processing method of any of claims 1 to 4, wherein the borane precursor comprises NH(CH3)2BH3.
7. The processing method of claim 6, wherein the borocarbide film consists essentially of boron, carbon, nitrogen and optionally, hydrogen atoms.
8. The processing method of any of claims 1 to 4, wherein the borane precursor is co-flowed into the processing chamber with a co-reactant, the co-reactant selected from the group consisting of hydrogen, B2H6, CH4, C2H2, C3H6, NH3 and combinations thereof.
9. The processing method of claim 8, wherein the co-reactant increases an atomic percentage of one or more of hydrogen, carbon or nitrogen in the borocarbide film.
10. The processing method of any of claims 1 to 4, wherein the borane precursor is exposed to a plasma in processing chamber to form the borocarbide film, the plasma comprises one or more of hydrogen, nitrogen, helium or argon.
1 1 . The processing method of any of claims 1 to 4, wherein the substrate surface comprises silicon.
12. The processing method of any of claims 1 to 4, wherein the substrate surface comprises at least one feature thereon and the borocarbide film forms conformally on the at least one feature.
13. The processing method of any of claims 1 to 4, wherein the borocarbide film is substantially transparent to light at a predetermined wavelength.
14. The processing method of claim 13, wherein the borocarbide film is formed as a hardmask and is resistant to etching and the method further comprises irradiating the substrate surface through the borocarbide film using light of the predetermined wavelength, and removing the hardmask.
15. A processing method comprising:
positioning a substrate having a surface in a processing chamber, the surface having at least one feature thereon and comprises substantially no boron;
exposing the surface of the substrate to a borane precursor and an optional co-reactant at a temperature in the range of about 300QC to about
550QC to form a conformal hardmask comprising a borocarbide film on the at least one feature, the borane precursor comprising NH(CH3)2BH3! the co- reactant selected from the group consisting of hydrogen, B2H6, CH4, C2H2, C3H6, NH3 and combinations thereof.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107117589A (en) * | 2017-05-25 | 2017-09-01 | 华侨大学 | A kind of high specific capacitance (BC) xNyOz materials and its synthetic method |
CN107117589B (en) * | 2017-05-25 | 2019-03-12 | 华侨大学 | A kind of high specific capacitance (BC) xNyOz material and its synthetic method |
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KR20180043393A (en) | 2018-04-27 |
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