WO2017022012A1 - アルミニウム‐炭化珪素質複合体及びその製造方法 - Google Patents

アルミニウム‐炭化珪素質複合体及びその製造方法 Download PDF

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Publication number
WO2017022012A1
WO2017022012A1 PCT/JP2015/071802 JP2015071802W WO2017022012A1 WO 2017022012 A1 WO2017022012 A1 WO 2017022012A1 JP 2015071802 W JP2015071802 W JP 2015071802W WO 2017022012 A1 WO2017022012 A1 WO 2017022012A1
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Prior art keywords
silicon carbide
mass
less
particle size
aluminum
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PCT/JP2015/071802
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English (en)
French (fr)
Inventor
晃正 湯浅
宮川　健志
大助 後藤
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電気化学工業株式会社
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Application filed by 電気化学工業株式会社 filed Critical 電気化学工業株式会社
Priority to US15/748,420 priority Critical patent/US10919811B2/en
Priority to PCT/JP2015/071802 priority patent/WO2017022012A1/ja
Priority to DE112015006755.8T priority patent/DE112015006755T5/de
Priority to CN201580082081.7A priority patent/CN107848902A/zh
Publication of WO2017022012A1 publication Critical patent/WO2017022012A1/ja

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Definitions

  • the present invention relates to an aluminum-silicon carbide composite and a method for producing the same.
  • the silicon carbide composite can suppress its thermal expansion coefficient to 10 ppm / K or less by increasing the content of silicon carbide in the composite, and can exhibit high thermal conductivity.
  • it due to its low specific gravity and the like, it has recently attracted attention as a heat sink material (Patent Documents 1, 2, and 3).
  • the thermal conductivity of the conventional silicon carbide composites is at most about 200 W / mK at room temperature, which is less than that of copper (400 W / mK), and has a higher thermal conductivity. A complex was desired.
  • the thermal conductivity of the silicon carbide based composite has a particle size of silicon carbide particles constituting the composite and the silicon carbide It is highly dependent on the content, and the composite having a specific range of particle size and silicon carbide content exhibits a high thermal conductivity of 230 W / mK or more, and a silicon carbide powder having a larger particle size is used. Then, the silicon carbide content in the composite cannot be increased, and a high thermal conductivity of 230 W / mK or more cannot be achieved.
  • JP 2000-154080 A Japanese Patent Laid-Open No. 2000-141022 JP 2000-169267 A
  • the present invention has been made in view of the above circumstances, and has been made for the purpose of obtaining an aluminum-silicon carbide composite having high thermal conductivity, low thermal expansion, and low specific gravity.
  • the aluminum-silicon carbide composite according to the present invention is an aluminum-silicon carbide composite obtained by impregnating a porous silicon carbide molded body with an aluminum alloy, and the proportion of silicon carbide in the composite is 60 volumes.
  • the aluminum-silicon carbide based composite has a thermal conductivity at 25 ° C. of 230 W / mK or more.
  • the aluminum-silicon carbide composite is characterized by having a thermal expansion coefficient at 25 ° C. to 150 ° C. of 7.0 ppm / K or less.
  • the aluminum alloy in the aluminum-silicon carbide based composite, contains 10% by mass to 14% by mass of silicon and 0.5% by mass to 2.5% by mass of magnesium. It is characterized by comprising.
  • the above-mentioned aluminum-silicon carbide composite is obtained by adding an inorganic binder to a raw material powder containing three or more types of silicon carbide powders having different particle size distributions, and forming and firing steps. It is characterized by going through.
  • the aluminum-silicon carbide composite according to the present invention or the aluminum-silicon carbide composite provided by the production method according to the present invention has high thermal conductivity, low thermal expansion, and low specific gravity.
  • the aluminum-silicon carbide composite according to the present embodiment is an aluminum-silicon carbide composite obtained by impregnating a porous silicon carbide molded body with an aluminum alloy, and the proportion of silicon carbide in the composite is 60. 60% by mass or more and 75% by mass or less of silicon carbide having a particle size of 80 ⁇ m or more and 800 ⁇ m or less, and 20% by mass or more and 30% by mass of silicon carbide having a particle size of 8 ⁇ m or more and less than 80 ⁇ m. It is characterized by containing 5% by mass or more and 10% by mass or less of silicon carbide having a particle size of less than 8 ⁇ m.
  • the particle size of silicon carbide means a particle size calculated by an electrical resistance test method.
  • the amount of particles having a particle diameter of 80 ⁇ m or more and 800 ⁇ m or less with respect to all silicon carbide particles is set to 60 W% or more and less than 75 wt%, whereby 230 W / mK or more.
  • Thermal conductivity can be expressed.
  • the particle size is 80 ⁇ m or more, it becomes easy to obtain a target thermal conductivity of 230 W / mK or more. Further, if it is less than 55% by mass, the object of the present invention cannot be achieved even if the silicon carbide content itself in the composite can be increased.
  • the amount of particles having a particle size of 8 ⁇ m or more and less than 80 ⁇ m with respect to all silicon carbide particles is reduced to 20% by mass or more and less than 30% by mass, thereby reducing the thermal conductivity. Can be obtained.
  • the amount of particles having a particle size of less than 8 ⁇ m with respect to all silicon carbide particles is set to 5 ppm by mass to less than 10 mass%, thereby achieving the intended 7.0 ppm. It becomes easy to obtain a coefficient of thermal expansion of / K or less.
  • the particle size of silicon carbide particles and the content of silicon carbide constituting the composite are important factors that largely control the thermal conductivity.
  • the silicon carbide based composite obtained simply by using silicon carbide powder having a large particle size has a large particle size of the silicon carbide particles themselves, there is little mixing of oxygen from the raw material, and the composite Although it has a relatively high thermal conductivity because it is difficult to mix oxygen under the influence of oxidation or the like during the manufacturing process of the above, it is difficult to develop a high thermal conductivity of 230 W / mK or more, because the particle size is large Therefore, it is difficult to improve the silicon carbide content in the composite, and further, the silicon carbide powder with a small particle size added to improve the silicon carbide content is limited to a specific range. Otherwise, it is based on the knowledge that high thermal conductivity of 230 W / mK or more at room temperature cannot be expressed.
  • examples of the aluminum alloy include a silicon-containing aluminum alloy, an aluminum alloy containing silicon and magnesium, and a magnesium-containing aluminum alloy that are usually used when producing a silicon carbide composite.
  • an aluminum alloy containing silicon and magnesium is preferable because the melting point of the molten metal is low and workability is good, and a magnesium-containing aluminum alloy is preferably selected from the viewpoint of improving the thermal conductivity of the resulting composite. .
  • the silicon content is preferably 18% by mass or less. More preferably, the silicon content is 10% by mass to 14% by mass.
  • the magnesium content 0.5% by mass or more is considered in view of the fact that workability is good because the melting point of the alloy is lowered, and that the thermal conductivity of the resulting composite is lowered. It is preferable that it is 5 mass% or less. Furthermore, at 0.5 to 1.6% by mass, the thermal conductivity at 25 ° C. is 230 W / mK or more, and at 1.6 to 2.5% by mass, the thermal conductivity at 25 ° C. The rate is more preferable because it is 240 W / mK or more.
  • the use of the aluminum-silicon carbide composite according to the present embodiment is not limited, but the carbonization in the composite is particularly required in applications requiring further low thermal expansion, such as a heat sink for a semiconductor module.
  • a high silicon content is desirable.
  • the silicon carbide content in the composite is preferably 60% by volume or more.
  • particles having a particle size of 80 ⁇ m or more and 800 ⁇ m or less in all silicon carbide particles are 60% by mass or more and 75% by mass or less, and 8 ⁇ m or more and less than 80 ⁇ m.
  • silicon carbide powder configured such that particles having a particle size are 20% by mass or more and 30% by mass or less and particles having a particle size of less than 8 ⁇ m are 5% by mass or more and 10% by mass or less.
  • a porous molded body having a filling degree (or relative density) of 60% by volume or more is obtained, and an aluminum alloy is impregnated into the porous molded body by applying a conventionally known impregnation method.
  • the conventionally known impregnation methods include a method in which a predetermined amount of silicon carbide powder is stirred into a molten aluminum alloy, a powder metallurgy method in which silicon carbide powder and aluminum alloy powder are mixed and fired, and a pre-made silicon carbide powder.
  • a melt forging method, a die casting method, and the like in which a reform is produced and a molten aluminum alloy is impregnated therein.
  • a method in which the silicon carbide content in the composite can be increased and a dense composite is easily obtained, and therefore, a method in which a preform is prepared and impregnated with molten aluminum is a preferable method.
  • a more preferred impregnation method is a melt forging method.
  • This method is a method in which a preform is placed in a mold, an aluminum alloy is charged, and then pressurized with mechanical pressure. The work is easy and, for example, when the pre-heat treatment of the preform is performed in air, This is because the aluminum alloy can be impregnated under a temperature condition in which the remaining heat does not cause significant oxidation of the preform.
  • the molten aluminum alloy temperature when impregnating the aluminum alloy is 700 ° C. to 850 ° C., and the pressure during the impregnation is 30 MPa or more.
  • known molding methods such as a press molding method, a casting molding method, and an extrusion molding method can be adopted as the molding method, and conventionally known treatments such as drying and firing can be applied.
  • an organic binder such as methyl cellulose or PVA, an inorganic binder such as colloidal silica or alumina sol, and water or an organic solvent as a solvent.
  • the preform immediately before impregnation is 60% by mass to 75% by mass of particles having a particle size of 80 ⁇ m or more and 800 ⁇ m or less in all silicon carbide particles, and 8 ⁇ m or more and less than 80 ⁇ m.
  • Particles having a particle size of 20 mass% to 30 mass%, particles having a particle diameter of less than 8 ⁇ m are composed of 5 mass% to 10 mass%, and the filling degree of silicon carbide is 60 volume% or more. It is sufficient if the configuration is maintained.
  • the preform is added with an inorganic binder such as colloidal silica or alumina sol for the purpose of developing its strength, but these binders act in the direction of lowering the thermal conductivity. Therefore, the amount of addition should be appropriately adjusted in accordance with the particle size of the silicon carbide powder used at the time of forming the preform and the silicon carbide filling degree of the preform obtained therefrom.
  • colloidal silica is preferable because it becomes silica when bonded to form silicon carbide particles and develops a sufficient preform strength.
  • the oxygen increase derived from the inorganic binder can be increased. Will occur, so the amount of addition should be limited.
  • the amount of inorganic binder added is preferably 10% by mass or less based on the total silicon carbide particles in the case of silica sol having a solid content concentration of 20% by mass, for example.
  • the thermal conductivity at 25 ° C. is 230 W / mK or more
  • the thermal conductivity at 25 ° C. is 245 W / mK or more.
  • the preform is generally fired for the purpose of developing the strength by the inorganic binder described above. At this time, firing is usually performed in an oxygen-containing atmosphere such as air. However, the silicon carbide powder constituting the preform is slightly oxidized by this firing, which causes a decrease in thermal conductivity in the composite. There is. Therefore, when firing the preform, conditions that are less susceptible to oxidation should be adopted as much as possible according to the particle size of the silicon carbide powder used. For example, firing in air is preferably performed at a temperature lower than 950 ° C., depending on the holding time, to suppress oxidation as much as possible. A preferable temperature range is 750 ° C. to 900 ° C. Examples of the firing method in a non-oxidizing atmosphere include a method of firing in a non-oxidizing gas such as argon, helium, hydrogen, nitrogen, or in vacuum.
  • a non-oxidizing gas such as argon, helium, hydrogen, nitrogen, or in vacuum.
  • a method of impregnating the preform with the aluminum alloy known methods such as a molten metal forging method, a die casting method, and a modified method thereof can be used.
  • a preform pre-heat treatment is generally performed as a preliminary process so that the aluminum alloy can easily permeate.
  • the silicon carbide particles constituting the preform are oxidized and the amount of oxygen does not exceed 1.4% by mass, and the amount of oxygen is further suppressed to 1.1% by mass or less. Is preferred.
  • the aluminum-silicon carbide composite according to the above embodiment has a high thermal conductivity of 230 W / mK or more, it is suitable as a heat sink material for a power module. Further, since the thermal expansion coefficient at 25 ° C. to 150 ° C. is 7.0 ppm / K or less, it can be used as a heat sink for semiconductor modules.
  • the aluminum-silicon carbide composite according to the above embodiment has a low specific gravity of about 3 and is also useful as a mounting material for mobile devices such as automobiles and trains.
  • Example 1 65% by mass of silicon carbide powder having a particle size of 80 ⁇ m or more and 800 ⁇ m or less, 25% by mass of silicon carbide powder having a particle size of 8 ⁇ m or more and less than 80 ⁇ m, 10% by mass of silicon carbide powder having a particle size of less than 8 ⁇ m, and colloidal silica (Nissan 8.9% by mass of Snowtex O manufactured by Chemical Industry Co., Ltd., containing 20% by mass of solids) and 12% by mass of water were weighed and mixed to prepare a slurry. The slurry was poured into a plaster mold and allowed to stand, then demolded and dried to obtain a molded body. This molded body was calcined in air at 1000 ° C. for 4 hours to form a preform.
  • NG-F80 manufactured by Taiyo Random Co., Ltd.
  • GC- # 500 Yakushima made by Nanko Ceramics Co., Ltd., so that the silicon carbide powder having a particle size of 8 ⁇ m or more and less than 80 ⁇ m is 25% by mass and the silicon carbide powder having a particle size of less than 8 ⁇ m is 10% by mass.
  • Electric powder GC-1000F and Nanko Ceramics Co., Ltd. GC- # 4000 mixed at a mixing ratio of 13.5: 16.5: 5.0 were used.
  • a part of the preform was processed to a diameter of 50 mm and a thickness of 5 mm in order to measure the density.
  • the filling degree of the silicon carbide in the preform was 69.6%.
  • the silicon carbide filling degree of the preform was defined as a percentage by dividing the density of the processed product by the theoretical density of silicon carbide of 3.21 g / cm 3 .
  • the remaining preform was preheated by firing at 650 ° C. for 1 hour in air.
  • the front surface of the preform is sufficiently hidden so that the aluminum alloy containing 12% by mass of silicon and 1% by mass of magnesium and melted at 850 ° C. It was put in the mold. Thereafter, it was quickly pressed by a punch at a pressure of 56 MPa for 14 minutes, and after cooling, an aluminum alloy lump containing a silicon carbide based composite was taken out from the mold. Further, a silicon carbide composite was cut out from this lump.
  • the thermal conductivity of the composite at room temperature In order to measure the thermal conductivity of the composite at room temperature, a part thereof was processed into a length of 25 mm, a width of 25 mm, and a thickness of 1 mm to prepare a sample. As a result of measuring the thermal conductivity of this sample by the laser flash method, the thermal conductivity was 252 W / mK. About the sample for thermal expansion coefficient measurement, the sample of the predetermined shape was cut out from the said composite, and the thermal expansion coefficient from room temperature (25 degreeC) to 150 degreeC was measured. The results are shown in Table 1.
  • Example 2 65% by mass of silicon carbide powder having a particle size of 80 ⁇ m or more and 800 ⁇ m or less, 26% by mass of silicon carbide powder having a particle size of 8 ⁇ m or more and less than 80 ⁇ m, 9% by mass of silicon carbide powder having a particle size of less than 8 ⁇ m, and colloidal silica (Nissan 11.6% by mass of Snowtex O, manufactured by Kagaku Kogyo Co., Ltd., containing 20% by mass of solids) and 9% by mass of water were weighed and mixed to prepare a slurry.
  • colloidal silica Nisan 11.6% by mass of Snowtex O, manufactured by Kagaku Kogyo Co., Ltd., containing 20% by mass of solids
  • NG-F80 manufactured by Taiyo Random Co., Ltd. was used.
  • Nanko Ceramics Co., Ltd. GC- # 500 Yakushima so that the silicon carbide powder having a particle size of 8 ⁇ m or more and less than 80 ⁇ m is 26% by mass and the silicon carbide powder having a particle size of less than 8 ⁇ m is 9% by mass.
  • a powder prepared by mixing GC-1000F and GMF-4S manufactured by Denko Co., Ltd. at a blending ratio of 13.5: 16.5: 5.0 was used. Preforms and composites were produced in the same manner as in Example 1. The results are shown in Table 1.
  • Example 3 65% by mass of silicon carbide powder having a particle size of 80 ⁇ m or more and 800 ⁇ m or less, 25% by mass of silicon carbide powder having a particle size of 8 ⁇ m or more and less than 80 ⁇ m, 10% by mass of silicon carbide powder having a particle size of less than 8 ⁇ m, and colloidal silica (Nissan 12.0% by mass of Snowtex O manufactured by Chemical Industry Co., Ltd., containing 20% by mass of solids) and 9% by mass of water were weighed and mixed to prepare a slurry.
  • colloidal silica Nisan 12.0% by mass of Snowtex O manufactured by Chemical Industry Co., Ltd., containing 20% by mass of solids
  • NG-F80 manufactured by Taiyo Random Co., Ltd.
  • GC- # 500 Yakushima made by Nanko Ceramics Co., Ltd., so that the silicon carbide powder having a particle size of 8 ⁇ m or more and less than 80 ⁇ m is 25% by mass and the silicon carbide powder having a particle size of less than 8 ⁇ m is 10% by mass.
  • Electric powder GC-1000F and Nanko Ceramics Co., Ltd. GC- # 4000 mixed at a mixing ratio of 13.5: 16.5: 5.0 were used.
  • a preform was produced in the same manner as in Example 1.
  • Example 4 A preform and a composite were produced in the same manner as in Example 3 except that the aluminum alloy was an aluminum alloy containing 12% by mass of silicon and 1.2% by mass of magnesium. The results are shown in Table 1.
  • Example 5 A preform and a composite were produced in the same manner as in Example 3 except that the aluminum alloy was an aluminum alloy containing 12% by mass of silicon and 1.6% by mass of magnesium. The results are shown in Table 1.
  • Example 6 As a silicon carbide powder having a particle size of 80 ⁇ m or more and 800 ⁇ m or less, NG-F80 manufactured by Taiyo Random Co., Ltd. was used. In addition, GC- # 500, Yakushima made by Nanko Ceramics Co., Ltd., so that the silicon carbide powder having a particle size of 8 ⁇ m or more and less than 80 ⁇ m is 25% by mass and the silicon carbide powder having a particle size of less than 8 ⁇ m is 10% by mass. Electric powder GC-1000F and Nanko Ceramics Co., Ltd. GC- # 6000 were mixed at a mixing ratio of 13.5: 16.5: 5.0.
  • Preforms and composites were produced in the same manner as in Example 3 except that 6% by mass of colloidal silica (Snowtex O manufactured by Nissan Chemical Industries, Ltd., containing 20% by mass of solids) was weighed and the slurry was adjusted. The results are shown in Table 1.
  • Example 7 60% by mass of silicon carbide powder having a particle size of 80 ⁇ m or more and 800 ⁇ m or less, 30% by mass of silicon carbide powder having a particle size of 8 ⁇ m or more and less than 80 ⁇ m, 10% by mass of silicon carbide powder having a particle size of less than 8 ⁇ m, and colloidal silica (Nissan 12% by mass of Snowtex O, manufactured by Chemical Industry Co., Ltd., containing 20% by mass of solids) and 9% by mass of water were weighed and mixed to prepare a slurry.
  • colloidal silica Nisan 12% by mass of Snowtex O, manufactured by Chemical Industry Co., Ltd., containing 20% by mass of solids
  • the silicon carbide powder having a particle size of 80 ⁇ m or more and 800 ⁇ m or less is 60% by mass
  • the silicon carbide powder having a particle size of 8 ⁇ m or more and less than 80 ⁇ m is 30% by mass
  • the silicon carbide powder having a particle size of less than 8 ⁇ m is 10% by mass.
  • NG-F54 manufactured by Taiyo Random Co., Ltd., GC- # 500 manufactured by Taiyo Random Co., Ltd., and GC- # 3000 manufactured by Taiyo Random Co., Ltd. were mixed at a blending ratio of 60:30:10. .
  • Preforms and composites were produced in the same manner as in Example 1. The results are shown in Table 1.
  • Example 8 75% by mass of silicon carbide powder having a particle size of 80 ⁇ m or more and 800 ⁇ m or less, 25% by mass of silicon carbide powder having a particle size of 8 ⁇ m or more and less than 80 ⁇ m, 5% by mass of silicon carbide powder having a particle size of less than 8 ⁇ m, and colloidal silica (Nissan 12% by mass of Snowtex O, manufactured by Chemical Industry Co., Ltd., containing 20% by mass of solids) and 9% by mass of water were weighed and mixed to prepare a slurry.
  • colloidal silica Nisan 12% by mass of Snowtex O, manufactured by Chemical Industry Co., Ltd., containing 20% by mass of solids
  • the silicon carbide powder having a particle size of 80 ⁇ m or more and 800 ⁇ m or less is 75% by mass
  • the silicon carbide powder having a particle size of 8 ⁇ m or more and less than 80 ⁇ m is 20% by mass
  • the silicon carbide powder having a particle size of less than 8 ⁇ m is 5% by mass.
  • a powder prepared by mixing NG-F30 manufactured by Taihei Random Co., Ltd., NG-F220 manufactured by Taihei Random Co., Ltd., and GC- # 2000 manufactured by Taihei Random Co., Ltd. at a blending ratio of 60:30:10 was used.
  • Preforms and composites were produced in the same manner as in Example 1. The results are shown in Table 1.
  • Example 9 70% by mass of silicon carbide powder having a particle size of 80 ⁇ m or more and 800 ⁇ m or less, 20% by mass of silicon carbide powder having a particle size of 8 ⁇ m or more and less than 80 ⁇ m, 10% by mass of silicon carbide powder having a particle size of less than 8 ⁇ m, and colloidal silica (Nissan 12% by mass of Snowtex O, manufactured by Chemical Industry Co., Ltd., containing 20% by mass of solids) and 9% by mass of water were weighed and mixed to prepare a slurry.
  • colloidal silica Nisan 12% by mass of Snowtex O, manufactured by Chemical Industry Co., Ltd., containing 20% by mass of solids
  • NG-F80 As a silicon carbide powder having a particle size of 80 ⁇ m or more and 800 ⁇ m or less, NG-F80 manufactured by Taiyo Random Co., Ltd. was used. In addition, GC- # 800 manufactured by Taiyo Random Co., Ltd. is used so that the silicon carbide powder having a particle size of 8 ⁇ m or more and less than 80 ⁇ m is 20% by mass and the silicon carbide powder having a particle size of less than 8 ⁇ m is 10% by mass. GC- # 6000 manufactured by Yo Random Co., Ltd. was mixed at a blending ratio of 20:10. A preform was produced in the same manner as in Example 1. The aluminum alloy is 12% by mass of silicon and 1.6% by mass of magnesium.
  • Example 10 A preform and a composite were produced in the same manner as in Example 9, except that the aluminum alloy was an aluminum alloy containing 12% by mass of silicon and 2.1% by mass of magnesium.
  • Silicon carbide powder having a particle size of 80 ⁇ m or more and 800 ⁇ m or less is 55% by mass
  • silicon carbide powder having a particle size of 8 ⁇ m or more and less than 80 ⁇ m is 40% by mass
  • silicon carbide powder having a particle size of less than 8 ⁇ m is 5% by mass.
  • the powder which mixed NG-F150 by Taiheiyo Random Co., Ltd. and GC-1000F by Yakushima Electric Works Co., Ltd. with a mixture ratio of 2: 1 was used.
  • the aluminum-silicon carbide composites of Examples 1 to 10 according to the present invention have high thermal conductivity and a low thermal expansion coefficient. It can also be seen that these aluminum-silicon carbide composites have a low specific gravity.
  • the aluminum-silicon carbide composite according to the present invention has a high thermal conductivity and is therefore suitable as a heat sink material for a power module and has a low coefficient of thermal expansion.
  • -It can be used as a heat sink for steel. Further, because of its low specific gravity, it is also useful as a mounting material for mobile devices such as automobiles and trains.

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Abstract

【課題】高熱伝導、低熱膨張並びに低比重であるアルミニウム‐炭化珪素質複合体及びその製造方法を提供する。 【解決手段】多孔質炭化珪素成形体にアルミニウム合金を含浸してなるアルミニウム‐炭化珪素質複合体であって、該複合体中の炭化珪素の割合が６０体積％以上であり、粒径が８０μｍ以上８００μｍ以下である炭化珪素を６０質量％以上７５質量％以下含有し、粒径が８μｍ以上粒径８０μｍ未満である炭化珪素を２０質量％以上３０質量％以下含有し、粒径が８μｍ未満である炭化珪素を５質量％以上１０質量％以下含有することを特徴とするアルミニウム‐炭化珪素質複合体を提供する。

Description

アルミニウム‐炭化珪素質複合体及びその製造方法
　本発明は、アルミニウム‐炭化珪素質複合体及びその製造方法に関する。
　従来より、パワーモジュ－ルにおけるヒートシンク材として、銅が使用されてきた。しかし、銅をヒートシンク材として使用した場合、その高い熱膨張係数（１７ｐｐｍ／Ｋ）のため、ヒートシンク材の上に搭載されたセラミックス回路基板或いは両者を接合する半田にクラックが発生する等、信頼性に問題があった。そのため、低熱膨張、高熱伝導性を有するヒートシンク材が要望されていた。
　上記の状況下において、炭化珪素質複合体は、該複合体中の炭化珪素の含有量を上げることにより、その熱膨張係数を１０ｐｐｍ／Ｋ以下に抑えられること、また、高熱伝導性を発現できること、さらには低比重であること等から、近年、ヒートシンク材として注目されている（特許文献１、２及び３）。
　しかし、従来の炭化珪素質複合体の熱伝導率は、いずれも室温下でたかだか２００Ｗ／ｍＫ程度であり、銅のそれ（４００Ｗ／ｍＫ）には及ばず、さらなる高熱伝導率を有する炭化珪素質複合体が望まれていた。
　本発明者らは、従来のヒートシンク材が有する課題を解決するため鋭意検討を重ねた結果、炭化珪素質複合体の熱伝導率が該複合体を構成する炭化珪素粒子の粒径と炭化珪素の含有量に大きく依存していること、また特定範囲の粒径及び炭化珪素含有量を有する複合体が２３０Ｗ／ｍＫ以上の高熱伝導率を示すこと、更に粒径の大きな炭化珪素粉末を使用しただけでは複合体中の炭化珪素含有量が増加できず、２３０Ｗ／ｍＫ以上の高熱伝導率は達成できないこと、加えて、炭化珪素含有量を増加させる目的で炭化珪素の微粉を添加する際に、２３０Ｗ／ｍＫ以上の高熱伝導率を達成するためには、使用される炭化珪素粒子の粒径及びその量を特定するべきことを見出し、本発明に至ったものである。
特開２０００－１５４０８０号公報 特開２０００－１４１０２２号公報 特開２０００－１６９２６７号公報
　本発明は、上記の事情に鑑みてなされたものであり、高熱伝導、低熱膨張並びに低比重であるアルミニウム‐炭化珪素質複合体を得ることを目的になされたものである。
　本発明に係るアルミニウム‐炭化珪素質複合体は、多孔質炭化珪素成形体にアルミニウム合金を含浸してなるアルミニウム‐炭化珪素質複合体であって、該複合体中の炭化珪素の割合が６０体積％以上であり、粒径が８０μｍ以上８００μｍ以下である炭化珪素を６０質量％以上７５質量％以下含有し、粒径が８μｍ以上粒径８０μｍ未満である炭化珪素を２０質量％以上３０質量％以下含有し、粒径が８μｍ未満である炭化珪素を５質量％以上１０質量％以下含有することを特徴とする。
　本発明の一態様によれば、上記のアルミニウム‐炭化珪素質複合体は、２５℃での熱伝導率が２３０Ｗ／ｍＫ以上であることを特徴とする。
　本発明の一態様によれば、上記のアルミニウム‐炭化珪素質複合体は、２５℃ないし１５０℃における熱膨張係数が７．０ｐｐｍ／Ｋ以下であることを特徴とする。
　本発明の一態様によれば、上記のアルミニウム‐炭化珪素質複合体は、前記アルミニウム合金が、１０質量％～１４質量％の珪素と、０．５質量％～２．５質量％のマグネシウムを含有してなることを特徴とする。
　本発明の一態様によれば、上記のアルミニウム‐炭化珪素質複合体は、異なる粒度分布を有する３種以上の炭化珪素粉末を配合した原料粉末に、無機バインダーを添加し、成形工程及び焼成工程を経ることを特徴とする。
　本発明に係るアルミニウム‐炭化珪素質複合体または本発明に係る製造方法により提供されるアルミニウム‐炭化珪素質複合体は、高熱伝導、低熱膨張並びに低比重である。
　以下に、本発明に係るアルミニウム‐炭化珪素質複合体及びその製造方法について一実施形態を説明する。しかし本発明は以下の実施形態に限定されるものでないことは自明である。
　本実施形態に係るアルミニウム‐炭化珪素質複合体は、多孔質炭化珪素成形体にアルミニウム合金を含浸してなるアルミニウム‐炭化珪素質複合体であって、該複合体中の炭化珪素の割合が６０体積％以上であり、粒径が８０μｍ以上８００μｍ以下である炭化珪素を６０質量％以上７５質量％以下含有し、粒径が８μｍ以上粒径８０μｍ未満である炭化珪素を２０質量％以上３０質量％以下含有し、粒径が８μｍ未満である炭化珪素を５質量％以上１０質量％以下含有することを特徴とする。本実施形態において、炭化珪素の粒径とは、電気抵抗試験方法により算出される粒径を意味する。
［炭化珪素質複合体］
　本実施形態に係るアルミニウム‐炭化珪素質複合体では、全炭化珪素粒子に対する８０μｍ以上８００μｍ以下の粒径を有する粒子の量を６０質量％以上７５質量％未満とすることにより、２３０Ｗ／ｍＫ以上の熱伝導率を発現させることができる。
　前記の粒径が８０μｍ以上であることにより、目的とする２３０Ｗ／ｍＫ以上の熱伝導率を得ることが容易となる。また、５５質量％未満であると、たとえ複合体中の炭化珪素含有量自体を大きくできても、本発明の目的を達成できない。
　本実施形態に係るアルミニウム‐炭化珪素質複合体では、全炭化珪素粒子に対する８μｍ以上８０μｍ未満の粒径を有する粒子の量を２０質量％以上３０質量％未満とすることにより、熱伝導率の低下を抑制できるという効果を得ることができる。
　また本実施形態に係るアルミニウム‐炭化珪素質複合体では、全炭化珪素粒子に対する８μｍ未満の粒径を有する粒子の量を５質量％以上１０質量％未満とすることにより、目的とする７．０ｐｐｍ／Ｋ以下の熱膨張係数を得ることが容易となる。
　本実施形態に係るアルミニウム‐炭化珪素質複合体では、該複合体を構成する炭化珪素粒子の粒径及び炭化珪素の含有量が、熱伝導率を大きく支配する重要な因子であり、炭化珪素粒子が特定範囲の粒径を有し、しかも該複合体中の炭化珪素含有量が特定量以上であるときに、室温（２５℃）での２３０Ｗ／ｍＫ以上の高い熱伝導率を有する炭化珪素質複合体が得られるという知見に基づいている。
　また、単に粒径が大きな炭化珪素粉末を使用して得られる炭化珪素質複合体は、使用する炭化珪素粒子自体の粒径が大きいがために、原料からの酸素の混入が少ないし、複合体の製造過程を通じて酸化等の影響を受けて酸素を混入し難いことから比較的高い熱伝導率を有するものの、２３０Ｗ／ｍＫ以上の高熱伝導率の発現は難しいこと、その理由として、粒径が大きいために複合体中の炭化珪素含有量を向上させることが困難であること、更に、炭化珪素含有量を向上するべく添加される粒径の小さな炭化珪素粉末については、その量を特定範囲に限定しなければ、室温での２３０Ｗ／ｍＫ以上の高熱伝導率を発現できないという知見に基づいている。
［アルミニウム合金］
　本実施形態において、アルミニウム合金としては、炭化珪素質複合体を作製する際に通常使用されている珪素含有アルミニウム合金、珪素とマグネシウムを含有するアルミニウム合金並びにマグネシウム含有アルミニウム合金が挙げられる。この中で、溶融金属の融点が低く作業性のよいことから珪素とマグネシウムを含有するアルミニウム合金が好ましく、また得られる複合体の熱伝導率向上の面からはマグネシウム含有アルミニウム合金が好ましく選択される。
　熱伝導率の低下を抑制するために、珪素の含有量を１８質量％以下とするのがよい。さらに好ましくは、珪素の含有量は１０質量％～１４質量％である。
　また、マグネシウムの含有量については、合金の融点が低下するため作業性が良いこと、得られる複合体の熱伝導率が低下する原因となること等を考慮し、０．５質量％以上２．５質量％以下であることが好ましい。
　さらに、０．５質量％以上１．６質量％以下では、２５℃での熱伝導率が２３０Ｗ／ｍＫ以上であり、１．６質量％以上２．５質量％以下では２５℃での熱伝導率が２４０Ｗ／ｍＫ以上であるためより好ましい。
　本実施形態に係るアルミニウム‐炭化珪素質複合体の用途は限定されるものではないが、特に半導体モジュール用放熱板のように一層低熱膨張性を要求される用途においては、該複合体中の炭化珪素含有量が多いことが望ましい。このため、該複合体中の炭化珪素含有量を６０体積％以上にすることが好ましく、この場合、２５℃から１５０℃における複合体の熱膨張係数が７．０ｐｐｍ／Ｋ以下である複合体を得ることができる。
［製造方法］
　本実施形態に係るアルミニウム‐炭化珪素質複合体を作製するには、全炭化珪素粒子中の８０μｍ以上８００μｍ以下の粒径を有する粒子が６０質量％以上７５質量％以下で、８μｍ以上８０μｍ未満の粒径を有する粒子が２０質量％以上３０質量％以下で、８μｍ未満の粒径を有する粒子が５質量％以上１０質量％以下となるように構成された炭化珪素粉末を用いて、炭化珪素の充填度（或いは相対密度）が６０体積％以上の多孔質成形体を得て、該多孔質成形体にアルミニウム合金を、従来公知の含浸方法を適用して、含浸すればよい。
　前記従来公知の含浸方法としては、溶融アルミニウム合金中に炭化珪素粉末を攪拌しながら所定量投入する方法、炭化珪素粉末とアルミニウム合金粉末を混合し焼成する粉末冶金法、及び予め炭化珪素よりなるプリフォームを作製し、これに溶融アルミニウム合金を含浸する溶湯鍛造法やダイカスト法等が知られている。これらのうち、複合体中の炭化珪素含有量を多くできる点、並びに緻密な複合体が得られやすいことから、プリフォームを作製し、これに溶融アルミニウムを含浸する方法が、好ましい方法である。
　より好ましい含浸方法としては溶湯鍛造法が挙げられる。この方法はプリフォームを金型内に設置し、アルミニウム合金を投入後、機械的圧力で加圧する方法であり、作業が容易で、かつ、例えばプリフォームの余熱処理を空気中で行う場合、その余熱がプリフォ－ムに大きな酸化を起こさせない温度条件で、アルミニウム合金を含浸できるからである。溶湯鍛造法にあっての一般的な条件としては、アルミニウム合金を含浸させる際の溶融アルミニウム合金温度が７００℃～８５０℃であり、含浸時の圧力としては３０ＭＰａ以上である。
　以下、本実施形態に係るアルミニウム‐炭化珪素質複合体を製造する方法として、特にプリフォームにアルミニウム合金を含浸する方法を通して、本発明をより詳細に説明する。
　プリフォームを作製するに際しては、その成形方法として、プレス成形法、鋳込み成形法、押し出し成形法等の公知の成形法が採用できるとともに、従来公知の乾燥、焼成等の処理を適用できる。また、成形に際してはメチルセルロ－ス、ＰＶＡ等の有機バインダーやコロイダルシリカ、アルミナゾル等の無機バインダー、さらに溶媒として水や有機溶剤等を使用することに何ら問題はない。
　このような種々の処理を施しても、含浸直前におけるプリフォ－ムが、全炭化珪素粒子中の８０μｍ以上８００μｍ以下の粒径を有する粒子が６０質量％以上７５質量％以下で、８μｍ以上８０μｍ未満の粒径を有する粒子が２０質量％以上３０質量％以下で、８μｍ未満の粒径を有する粒子が５質量％以上１０質量％以下から構成され、炭化珪素の充填度が６０体積％以上である構成が保たれていれば良い。
　プリフォ－ムは、その強度を発現させることを目的に、コロイダルシリカやアルミナゾル等の無機バインダー添加を行うが、これらのバインダーは熱伝導率を低下させる方向に作用する。したがって、その添加に際しては、プリフォ－ム作製時に使用する炭化珪素粉末の粒径及びそれから得られるプリフォ－ムの炭化珪素充填度にあわせて、その添加量を適宜調整すべきである。前記無機バインダーの中でコロイダルシリカは焼成により、シリカとなり炭化珪素粒子を結合し、十分なプリフォ－ム強度を発現させるので好ましいものであるが、これら無機バインダーの添加により無機バインダーに由来する酸素増量が発生するので、その添加量を制限するべきである。
　本実施形態に係るアルミニウム‐炭化珪素質複合体を作製するに当たっては、無機バインダーの添加量は、例えば固形分濃度２０質量％のシリカゾルの場合、全炭化珪素粒子に対して１０質量％以下が好ましい。無機バインダーの添加量が１０質量％以上では２５℃での熱伝導率が２３０Ｗ／ｍＫ以上であり、１０質量％以上では、２５℃での熱伝導率が２４５Ｗ／ｍＫ以上である。
　プリフォ－ムは、前記した無機バインダーによる強度発現等を目的に焼成されるのが一般的である。この際、通常、空気中など酸素含有雰囲気で焼成することが行われるが、プリフォ－ムを構成する炭化珪素粉末は、この焼成により若干酸化され、複合体において熱伝導率低下の原因になることがある。したがって、プリフォームの焼成に際しては、使用した炭化珪素粉末の粒径に応じて、なるべく酸化を受け難い条件を採用すべきである。例えば、空気中での焼成は、その保持時間にもよるが、９５０℃未満の温度で行い、酸化をできるだけ抑えることが好ましい。好ましい温度範囲としては、７５０℃～９００℃である。また、非酸化性の雰囲気中での焼成方法としては、アルゴン、ヘリウム、水素、窒素等の非酸化性ガス中或いは真空中で焼成する方法が挙げられる。
　また、プリフォ－ムにアルミニウム合金を含浸する方法としては、溶湯鍛造法、ダイカスト法並びにそれらを改良した方法等、公知の方法が使用できる。なお、含浸時には通常、その予備工程としてアルミニウム合金が浸透しやすいよう、プリフォ－ムの予熱処理が行われるのが一般的である。予熱処理においては、プリフォームを構成する炭化珪素粒子が酸化されて、酸素量が１．４質量％を超えないよう留意すべきであり、さらに酸素量を１．１質量％以下に抑制することが好ましい。
　上記実施形態に係るアルミニウム‐炭化珪素質複合体は、２３０Ｗ／ｍＫ以上の高熱伝導率を有することから、パワ－モジュ－ル用のヒートシンク材として好適である。また、２５℃から１５０℃における熱膨張係数が７．０ｐｐｍ／Ｋ以下であることから、半導体モジュ－ル用放熱板として用いることができる。
　また、上記実施形態に係るアルミニウム‐炭化珪素質複合体は、その比重が約３程度の低比重であり、自動車、電車等の移動装置用の搭載材料としても有用である。
［実施例１］
　８０μｍ以上８００μｍ以下の粒径を有する炭化珪素粉末６５質量％、８μｍ以上８０μｍ未満の粒径を有する炭化珪素粉末２５質量％、８μｍ未満の粒径を有する炭化珪素粉末１０質量％及びコロイダルシリカ（日産化学工業株式会社製スノーテックスＯ、固形物を２０質量％含有）を８．９質量％、水を１２質量％秤量し、これらを混合してスラリ－を調整した。このスラリ－を石膏型に流し込み放置した後、脱型・乾燥し成形体を得た。この成形体を空気中、１０００℃で４時間焼成しプリフォ－ムとした。
　８０μｍ以上８００μｍ以下の粒径を有する炭化珪素粉末として、大平洋ランダム株式会社製ＮＧ‐Ｆ８０を用いた。
　また、８μｍ以上８０μｍ未満の粒径を有する炭化珪素粉末が２５質量％、８μｍ未満の粒径を有する炭化珪素粉末が１０質量％となるように、南興セラミックス株式会社製ＧＣ‐＃５００、屋久島電工株式会社製ＧＣ‐１０００Ｆ及び南興セラミックス株式会社製ＧＣ‐＃４０００を１３．５：１６．５：５．０の配合率で混合した粉末を用いた。
　前記プリフォ－ムの一部について、密度を測定するために、直径５０ｍｍ、厚み５ｍｍに加工した。プリフォ－ムの炭化珪素の充填度は６９．６％であった。プリフォ－ムの炭化珪素充填度については、上記加工品の密度を炭化珪素の理論密度３．２１ｇ／ｃｍ３で除し、百分率で定義した。
　残りのプリフォ－ムについて、空気中６５０℃で１時間焼成することで予熱処理を行った。予熱後、すぐにプリフォ－ムを金型内に設置した後、珪素１２質量％、マグネシム１質量％を含み、８５０℃で溶融しているアルミニウム合金をプリフォ－ムの前面が十分隠れるように、金型内に投入した。その後、速やかにパンチにより５６ＭＰａの圧力で１４分間プレスし、冷却後、金型内から炭化珪素質複合体を含むアルミニウム合金塊を取り出した。更に、この塊から炭化珪素質複合体を切り出した。
　前記複合体の室温での熱伝導率を測定するため、一部を縦２５ｍｍ、横２５ｍｍ、厚み１ｍｍに加工し試料とした。レ－ザ－フラッシュ法で、この試料の熱伝導率を測定した結果、その熱伝導率は２５２Ｗ／ｍＫであった。熱膨張係数測定用試料については、前記複合体から所定形状の試料を切り出し、室温（２５℃）から１５０℃までの熱膨張係数を測定した。この結果を表１に示す。
Figure JPOXMLDOC01-appb-T000001
［実施例２］
　８０μｍ以上８００μｍ以下の粒径を有する炭化珪素粉末６５質量％、８μｍ以上８０μｍ未満の粒径を有する炭化珪素粉末２６質量％、８μｍ未満の粒径を有する炭化珪素粉末９質量％及びコロイダルシリカ（日産化学工業株式会社製スノーテックスＯ、固形物を２０質量％含有）を１１．６質量％、水を９質量％秤量し、これらを混合してスラリ－を調整した。
　８０μｍ以上８００μｍ以下の粒径を有する炭化珪素粉末として、大平洋ランダム株式会社製ＮＧ‐Ｆ８０を用いた。
　また、８μｍ以上８０μｍ未満の粒径を有する炭化珪素粉末が２６質量％、８μｍ未満の粒径を有する炭化珪素粉末が９質量％となるように、南興セラミックス株式会社製ＧＣ‐＃５００、屋久島電工株式会社製ＧＣ‐１０００Ｆ及びＧＭＦ‐４Ｓを１３．５：１６．５：５．０の配合率で混合した粉末を用いた。
　実施例１と同じ方法でプリフォーム及び複合体を作製した。結果を表１に示す。
［実施例３］
　８０μｍ以上８００μｍ以下の粒径を有する炭化珪素粉末６５質量％、８μｍ以上８０μｍ未満の粒径を有する炭化珪素粉末２５質量％、８μｍ未満の粒径を有する炭化珪素粉末１０質量％及びコロイダルシリカ（日産化学工業株式会社製スノーテックスＯ、固形物を２０質量％含有）を１２．０質量％、水を９質量％秤量し、これらを混合してスラリ－を調整した。
　８０μｍ以上８００μｍ以下の粒径を有する炭化珪素粉末として、大平洋ランダム株式会社製ＮＧ‐Ｆ８０を用いた。
　また、８μｍ以上８０μｍ未満の粒径を有する炭化珪素粉末が２５質量％、８μｍ未満の粒径を有する炭化珪素粉末が１０質量％となるように、南興セラミックス株式会社製ＧＣ‐＃５００、屋久島電工株式会社製ＧＣ‐１０００Ｆ及び南興セラミックス株式会社製ＧＣ‐＃４０００を１３．５：１６．５：５．０の配合率で混合した粉末を用いた。実施例１と同じ方法でプリフォームを作製した。
　アルミニウム合金は、珪素１２質量％、マグネシム０．９質量％を含有するアルミニウム合金を用いて複合体を作製した。結果を表１に示す。
［実施例４］
　アルミニウム合金を珪素１２質量％、マグネシム１．２質量％を含有するアルミニウム合金とした以外は、実施例３と同じ方法でプリフォーム及び複合体を作製した。結果を表１に示す。
［実施例５］
　アルミニウム合金を珪素１２質量％、マグネシム１．６質量％を含有するアルミニウム合金とした以外は、実施例３と同じ方法でプリフォーム及び複合体を作製した。結果を表１に示す。
［実施例６］
　８０μｍ以上８００μｍ以下の粒径を有する炭化珪素粉末として、大平洋ランダム株式会社製ＮＧ‐Ｆ８０を用いた。
　また、８μｍ以上８０μｍ未満の粒径を有する炭化珪素粉末が２５質量％、８μｍ未満の粒径を有する炭化珪素粉末が１０質量％となるように、南興セラミックス株式会社製ＧＣ‐＃５００、屋久島電工株式会社製ＧＣ‐１０００Ｆ及び南興セラミックス株式会社製ＧＣ‐＃６０００を１３．５：１６．５：５．０の配合率で混合した粉末を用いた。
　コロイダルシリカ（日産化学工業株式会社製スノーテックスＯ、固形物を２０質量％含有）を６質量％秤量し、スラリ－を調整した以外実施例３と同じ方法でプリフォーム及び複合体を作製した。結果を表１に示す。
［実施例７］
　８０μｍ以上８００μｍ以下の粒径を有する炭化珪素粉末６０質量％、８μｍ以上８０μｍ未満の粒径を有する炭化珪素粉末３０質量％、８μｍ未満の粒径を有する炭化珪素粉末１０質量％及びコロイダルシリカ（日産化学工業株式会社製スノーテックスＯ、固形物を２０質量％含有）を１２質量％、水を９質量％秤量し、これらを混合してスラリ－を調整した。
　８０μｍ以上８００μｍ以下の粒径を有する炭化珪素粉末が６０質量％、８μｍ以上８０μｍ未満の粒径を有する炭化珪素粉末が３０質量％、８μｍ未満の粒径を有する炭化珪素粉末が１０質量％となるように、大平洋ランダム株式会社製ＮＧ－Ｆ５４、大平洋ランダム株式会社製ＧＣ－＃５００、大平洋ランダム株式会社製ＧＣ－＃３０００を６０：３０：１０の配合率で混合した粉末を用いた。
　実施例１と同じ方法でプリフォーム及び複合体を作製した。結果を表１に示す。
［実施例８］
　８０μｍ以上８００μｍ以下の粒径を有する炭化珪素粉末７５質量％、８μｍ以上８０μｍ未満の粒径を有する炭化珪素粉末２５質量％、８μｍ未満の粒径を有する炭化珪素粉末５質量％及びコロイダルシリカ（日産化学工業株式会社製スノーテックスＯ、固形物を２０質量％含有）を１２質量％、水を９質量％秤量し、これらを混合してスラリ－を調整した。
　８０μｍ以上８００μｍ以下の粒径を有する炭化珪素粉末が７５質量％、８μｍ以上８０μｍ未満の粒径を有する炭化珪素粉末が２０質量％、８μｍ未満の粒径を有する炭化珪素粉末が５質量％となるように、大平洋ランダム株式会社製ＮＧ－Ｆ３０、大平洋ランダム株式会社製ＮＧ‐Ｆ２２０、大平洋ランダム株式会社製ＧＣ－＃２０００を６０：３０：１０の配合率で混合した粉末を用いた。
　実施例１と同じ方法でプリフォーム及び複合体を作製した。結果を表１に示す。
［実施例９］
　８０μｍ以上８００μｍ以下の粒径を有する炭化珪素粉末７０質量％、８μｍ以上８０μｍ未満の粒径を有する炭化珪素粉末２０質量％、８μｍ未満の粒径を有する炭化珪素粉末１０質量％及びコロイダルシリカ（日産化学工業株式会社製スノーテックスＯ、固形物を２０質量％含有）を１２質量％、水を９質量％秤量し、これらを混合してスラリ－を調整した。
　８０μｍ以上８００μｍ以下の粒径を有する炭化珪素粉末として、大平洋ランダム株式会社製ＮＧ‐Ｆ８０を用いた。
　また、８μｍ以上８０μｍ未満の粒径を有する炭化珪素粉末が２０質量％、８μｍ未満の粒径を有する炭化珪素粉末が１０質量％となるように、大平洋ランダム株式会社製ＧＣ‐＃８００、大平洋ランダム株式会社製ＧＣ‐＃６０００を２０：１０の配合率で混合した。
　実施例１と同じ方法でプリフォームを作製した。アルミニウム合金は、珪素１２質量％、マグネシム１．６質量％である。
［実施例１０］
　アルミニウム合金を珪素１２質量％、マグネシム２．１質量％含有するアルミニウム合金とした以外は、実施例９と同じ方法でプリフォーム及び複合体を作製した。
［比較例］
　８０μｍ以上８００μｍ以下の粒径を有する炭化珪素粉末５５質量％、８μｍ以上８０μｍ未満の粒径を有する炭化珪素粉末４０質量％、８μｍ未満の粒径を有する炭化珪素粉末５質量％及びコロイダルシリカ（日産化学工業株式会社製スノーテックスＯ、固形物を２０質量％含有）を１２質量％、水を１２質量％秤量し、これらを混合してスラリ－を調整した。このスラリ－を石膏型に流し込み放置した後、脱型・乾燥し成形体を得た。この成形体を空気中、１０００℃で４時間焼成しプリフォ－ムとした。
　８０μｍ以上８００μｍ以下の粒径を有する炭化珪素粉末が５５質量％、８μｍ以上８０μｍ未満の粒径を有する炭化珪素粉末が４０質量％、８μｍ未満の粒径を有する炭化珪素粉末が５質量％となるように、大平洋ランダム株式会社製ＮＧ‐Ｆ１５０、屋久島電工株式会社製ＧＣ‐１０００Ｆを２：１の配合率で混合した粉末を用いた。
　表１からわかるように、本発明に係る実施例１ないし１０のアルミニウム‐炭化珪素質複合体は、高い熱伝導を有し、かつ低い熱膨張係数を有する。またこれらのアルミニウム‐炭化珪素質複合体は、低比重であることがわかる。
　このように、本発明に係るアルミニウム‐炭化珪素質複合体は、高熱伝導率を有することから、パワ－モジュ－ル用のヒートシンク材として好適であり、低い熱膨張係数を有することから、半導体モジュ－ル用放熱板として用いることができる。また、その比重が低いため、自動車、電車等の移動装置用の搭載材料としても有用である。

Claims (5)

  1. 多孔質炭化珪素成形体にアルミニウム合金を含浸してなるアルミニウム‐炭化珪素質複合体であって、
    該複合体中の炭化珪素の割合が６０体積％以上であり、
    粒径が８０μｍ以上８００μｍ以下である炭化珪素を６０質量％以上７５質量％以下含有し、
    粒径が８μｍ以上粒径８０μｍ未満である炭化珪素を２０質量％以上３０質量％以下含有し、
    粒径が８μｍ未満である炭化珪素を５質量％以上１０質量％以下含有することを特徴とするアルミニウム‐炭化珪素質複合体。
  2. ２５℃での熱伝導率が２３０Ｗ／ｍＫ以上であることを特徴とする請求項１に記載のアルミニウム‐炭化珪素質複合体。
  3. ２５℃ないし１５０℃における熱膨張係数が７．０ｐｐｍ／Ｋ以下であることを特徴とする請求項１または２に記載のアルミニウム‐炭化珪素質複合体。
  4. 前記アルミニウム合金が、１０質量％～１４質量％の珪素と、０．５質量％～２．５質量％のマグネシウムを含有してなることを特徴とする請求項１から３のいずれか一項に記載のアルミニウム‐炭化珪素質複合体。
  5. 異なる粒度分布を有する３種以上の炭化珪素粉末を配合した原料粉末に、無機バインダーを添加し、成形工程及び焼成工程を経ることを特徴とする請求項１から４のいずれか一項に記載のアルミニウム‐炭化珪素質複合体の製造方法。
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