WO2017020690A1 - 基于p型硅衬底的背接触式太阳能电池 - Google Patents
基于p型硅衬底的背接触式太阳能电池 Download PDFInfo
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- WO2017020690A1 WO2017020690A1 PCT/CN2016/089963 CN2016089963W WO2017020690A1 WO 2017020690 A1 WO2017020690 A1 WO 2017020690A1 CN 2016089963 W CN2016089963 W CN 2016089963W WO 2017020690 A1 WO2017020690 A1 WO 2017020690A1
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- type silicon
- passivation film
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000010703 silicon Substances 0.000 title claims abstract description 47
- 239000000758 substrate Substances 0.000 title claims abstract description 37
- 238000002161 passivation Methods 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 19
- 229910052698 phosphorus Inorganic materials 0.000 claims description 18
- 239000011574 phosphorus Substances 0.000 claims description 18
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 abstract 3
- 239000010408 film Substances 0.000 description 47
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 28
- 229910052796 boron Inorganic materials 0.000 description 28
- 238000002360 preparation method Methods 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 11
- 239000000243 solution Substances 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 239000004327 boric acid Substances 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
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- 239000002253 acid Substances 0.000 description 1
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- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
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- 238000009826 distribution Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to the field of manufacturing new structure solar cells, in particular to a back contact solar cell based on a P-type silicon substrate and a preparation method thereof.
- the positive and negative electrodes are disposed on the back of the battery. That is, the back contact type solar cell, the most representative of which is an IBC (Interdigitated back contact) battery.
- the base of the IBC battery mainly adopts N-type crystalline silicon
- the P-type emitter is mainly prepared by a high-temperature boron source diffusion process, that is, a method of carrying boron tribromide by high-purity nitrogen.
- This method mainly has the following problems: 1. BBr 3 reacts to form B 2 O 3 , which has a high boiling point and is still liquid at high temperature, and the surface coverage of the silicon wafer is poor, which is easy to cause poor diffusion uniformity; 2. Boron diffusion The temperature is higher, generally between 900 °C and 1000 °C, which has a great influence on the P-type silicon wafer, which is likely to cause serious decline in the life of the minority carrier; 3.
- N-type silicon rod rod technology its resistivity distribution range (1 ⁇ cm ⁇ 12 ⁇ ⁇ cm) is much larger than P-type silicon wafer (0.5 ⁇ ⁇ cm ⁇ 3 ⁇ ⁇ cm), battery process control is more complicated, and the cost of N-type silicon wafer is also an important factor limiting its large-scale application.
- the present invention provides a P-type silicon substrate-based back contact solar cell and a preparation method thereof, wherein the P-type silicon wafer is used as a substrate material of a back contact solar cell in the solar cell.
- Its silicon technology is mature and has obvious cost advantages.
- its preparation method is more simplified and easy to implement, which is conducive to large-scale industrial application.
- a back contact solar cell based on a P-type silicon substrate comprising a P-type silicon substrate having opposite light-receiving surfaces and a back surface, the light-receiving surface being textured Processing the formed pile surface, the back surface is a plane formed by a planarization process; the light-receiving surface of the P-type silicon substrate is provided with a p+ doped layer doped with boron, and the first lightening surface is disposed on the light receiving surface a passivation film; a back surface of the P-type silicon substrate is provided with a plurality of boron-doped p+ doped regions and a plurality of doped phosphorus n+ doped regions, each of which is disposed in each p+ doped region a p++ heavily doped region, wherein each n+ doped region is provided with an n++ heavily doped region, the back surface is provided with a second anti-passivation film, and the second anti-passivation film is provided with mutual insulation a
- the first electrode and the second electrode are both metal fingers of an interdigitated shape.
- the first anti-passivation film and the second anti-passivation film are one or more films.
- the material of the first anti-passivation film and the second anti-passivation film is SiO 2 , SiN x , TiO 2 , AlO x or MgF 2 .
- the invention adopts a P-type silicon wafer as a substrate material, which is low in cost and universally applied.
- the backside flattening process that is, the backside polishing, facilitates the formation of a uniform PN junction and a PP+ high and low junction on the back side, while reducing the surface specific surface area and reducing surface recombination.
- the doping source is liquid or solid, safe and reliable, and is conducive to laser processing.
- the laser doping high temperature has a short acting time, and it is easy to accurately position doping and differential doping; the back positive and negative electrode design reduces
- the front gate line occlusion causes current loss while the metal electrode forms a good ohmic contact with the heavily doped region.
- the laser scanning process is used to process the doping source, mainly by utilizing the thermal effect of the laser, the short effect of the thermal effect, and the precise positioning, so as to form a specific region doping without causing significant damage to the surface of the silicon wafer. Avoiding the side effects of high temperature on P-type silicon wafers, the process is simple, the operation is convenient, the solar cell preparation process is greatly simplified, and the industrial application is more favorable.
- FIG. 1 is a schematic structural view of a solar cell according to an embodiment of the present invention.
- FIG. 2 is a schematic view showing the structure of a back electrode in an embodiment of the present invention.
- FIG. 3 is a process flow diagram of a method of fabricating a solar cell according to an embodiment of the present invention.
- 4a-4i are exemplary illustrations of various steps in a method of fabricating a solar cell of the present invention.
- this embodiment first provides a P-type silicon substrate-based back contact solar cell including a P-type silicon substrate 10 having a relatively light-receiving light.
- the surface 10a and the back surface 10b are the suede surface formed by the texturing process, and the back surface 10b is a plane formed by the planarization process.
- the light-receiving surface 10a of the P-type silicon substrate 10 is provided with a boron-doped p+ doping layer 20, and the light-receiving surface 10a is provided with a first anti-passivation film 30.
- the back surface 10b of the P-type silicon substrate 10 is provided with a plurality of boron-doped p+ doping regions 40 and a plurality of doped phosphorus n+ doping regions 50 alternately arranged in sequence, each of which is disposed in the p+ doping region 40.
- a second anti-passivation film 80 is disposed on the back surface 10b, and the second anti-passivation film 80 is provided with a first electrode 91 and a second electrode 92 insulated from each other, and the first electrode 91 passes through
- the second anti-passivation film 80 is electrically connected to the p++ heavily doped region 60, and the second electrode 92 is electrically connected to the n++ re-doping through the second anti-passivation film 80. Miscellaneous area 70.
- the sheet resistance of the p+ doped layer 20 is not more than 60 ⁇ / ⁇
- the sheet resistance of the p+ doped region 40 is not more than 60 ⁇ / ⁇
- the sheet resistance of the p++ heavily doped region 60 is not more than 40 ⁇ / ⁇ .
- the n+ doping region 50 has a sheet resistance of not more than 50 ⁇ / ⁇
- the n++ heavily doped region 70 has a sheet resistance of not more than 30 ⁇ / ⁇ .
- the first electrode 91 and the second electrode 92 are both metal fingers of an interdigitated shape.
- the first anti-passivation film 30 and the second anti-passivation film 80 are one or more thin films, and the materials thereof are SiO 2 , SiN x , TiO 2 , and AlO x .
- the first anti-passivation film 30 and the second anti-passivation film 80 may be a SiO 2 film; or, the first anti-passivation film 30 and the second anti-passivation film 80 include a layer A SiO 2 film and a SiN x film coated on the SiO 2 film.
- the method includes the steps of:
- a P-type silicon substrate is provided, a light-receiving surface of the P-type silicon substrate is textured to form a pile surface, and a back surface of the P-type silicon substrate is planarized to form a plane.
- the boron source material is selected from the group consisting of a boric acid solution, a borosilicate glass, a boron-containing silicon nitride, a boron-containing silicon oxide or a boron-containing amorphous silicon.
- the boron source material is selected from the group consisting of a boric acid solution, a borosilicate glass, a boron-containing silicon nitride, a boron-containing silicon oxide or a boron-containing amorphous silicon.
- the n+ doped regions form an n++ heavily doped region in each n+ doped region.
- the phosphorus source material is selected from the group consisting of a phosphoric acid solution, a phosphosilicate glass, a phosphorus-containing silicon nitride, a phosphorus-containing silicon oxide, or a phosphorus-containing amorphous silicon.
- the first electrode and the second electrode may be prepared by a process such as screen printing, photoinduced plating, chemical plating, or the like, and subjected to a sintering treatment.
- the three steps (b), (c) and (d) in the above preparation method are not limited in any order. For example, it may be in the order of (b), (c), or (d), or may be in the order of (d), (b), or (c), or may be sequentially (c), (b). , (d) order.
- the laser light-emitting mode may be pulsed, continuous, quasi-continuous, etc.
- the laser wavelength may be selected from 355 to 1064 nm
- the power may be selected from 5 to 100 W
- the spot diameter may be selected from 30 to 200 ⁇ m.
- the range of the laser pulse width can be selected from 30 to 300 ns.
- Steps (c) and (d) in the above preparation method can be prepared in the following manner for the p++ heavily doped region and the n++ heavily doped region:
- the process parameters are automatically switched by setting a laser scanning system, and the p+ doping region is obtained by a laser doping process, and the p+ is The p++ heavily doped region is formed in the doped region.
- the laser scanning system The process parameters are parameters for preparing the p+ doped region.
- the laser scanning system automatically switches to the process parameters for preparing the p++ heavily doped region, and the scanning preparation completes the p++ heavily doped region. Thereafter, the laser scanning system automatically switches to the parameters for preparing the p+ doped region until the p+ doped region is finally completed.
- the preparation of the n++ heavily doped region in step (d) is also carried out in the manner previously described.
- the p+ doped region is prepared by the laser doping process, and then the p+ doped region is prepared in the p+ doped region.
- the position is subjected to a secondary laser doping process to form the p++ heavily doped region.
- the preparation of the n++ heavily doped region in step (d) is also carried out in the manner previously described.
- a P-type silicon substrate 10 is first provided, which includes opposite light-receiving faces 10a and back faces 10b.
- the surface of the light-receiving surface 10a of the P-type silicon substrate 10 is subjected to surface texturing treatment: specifically, a mixed solution of potassium hydroxide or sodium hydroxide, IPA and a texturing additive may be used for surface treatment, and the surface has a pyramid-shaped pile. Surface structure; the silicon substrate 10 is chemically cleaned after the texturing process is completed.
- the back surface 10b of the P-type silicon substrate 10 is planarized: specifically, first, a protective dielectric film of SiO 2 , SiN x or the like is used on the light-receiving surface 10a, and then directly in a potassium hydroxide or sodium hydroxide alkali solution (10% by mass). Back etching is performed in the fraction), or back etching is performed using a HF/HNO 3 mixed acid solution, and the silicon substrate 10 is chemically cleaned after the etching is completed.
- a boron source material 10c is applied to the light-receiving surface 10a and the back surface 10b, respectively, and a boric acid solution or other boron-containing organic solvent may be used.
- the boron source material 10c of the borosilicate glass, the boron-containing silicon nitride, the boron-containing silicon oxide or the boron-containing amorphous silicon to form a thin film layer may also be deposited by a CVD deposition process. After drying the boron source material 10c, as shown in FIGS.
- a p+ doped layer (PP+ high and low junction) 20 is formed by laser scanning on the light receiving surface 10a, and a laser is locally scanned on the back surface 10b to obtain a plurality of boron doped p+.
- a doped region (PP+high and low junction) 40 is formed and a p++ heavily doped region 60 is formed in each p+ doped region 40, and then the residual boron doping source is removed by chemical cleaning and blown dry.
- the sheet resistance of the p+ doped layer 20 of the light receiving surface 10a is not higher than 60 ⁇ / ⁇ , and the sheet resistance of the p+ doping region 40 of the back surface 10b is not higher than 60 ⁇ / ⁇ , and a green light pulse having a wavelength of 532 nm may be used, continuous or quasi-
- the continuous laser has a power of 18 W, a scanning speed of 1.2 m/s, and a spot diameter of 50 ⁇ m.
- the sheet resistance of the P++ heavily doped region 60 is not higher than 40 ⁇ / ⁇ , and a green pulse with a wavelength of 532 nm, a continuous or quasi-continuous laser, a power of 20 W, a scanning speed of 1 m/s, and a spot diameter of 50 ⁇ m can be used.
- a 355 nm ultraviolet pulse, continuous or quasi-continuous laser may be used, with a power selection of 5 to 15 W, a scanning speed of 1 to 1.2 m/s, and a spot diameter of 40 ⁇ m for laser scanning.
- a phosphorus source material 10d is coated on the back surface 10b, and a phosphoric acid solution or other phosphorus-containing organic solvent may be used.
- the phosphorus source material 10d may be deposited by a CVD deposition process to form a thin film layer of phosphosilicate glass, phosphorus-containing silicon nitride, phosphorus-containing silicon oxide or phosphorus-containing amorphous silicon. After drying the phosphor source material 10d, as shown in FIGS.
- a plurality of phosphorus-doped n+ doped regions 50 are formed by laser scanning in respective regions, and each n+ doping An n++ heavily doped region 70 is formed in region 50, and the residual phosphorus doping source is removed by chemical cleaning and blown dry.
- the plurality of boron-doped p+ doping regions 40 and the plurality of doped phosphorus n+ doping regions 50 are alternately arranged.
- the square resistance of the n+ doped region 50 is not higher than 50 ⁇ / ⁇ , and a 532 nm green pulse, continuous or quasi-continuous laser can be used, the power is 12 W, the scanning speed is 1.2 m/s, and the spot diameter is 50 ⁇ m.
- the block resistance of the n++ heavily doped region 70 is not higher than 30 ⁇ / ⁇ , and a 532 nm green pulse, continuous or quasi-continuous laser can be used, the power is 18 W, the scanning speed is 1.2 m/s, and the spot diameter is 50 um.
- a 355 nm ultraviolet pulse, continuous or quasi-continuous laser may be used, with a power selection of 5 to 15 W, a scanning speed of 1 to 1.2 m/s, and a spot diameter of 40 ⁇ m for laser scanning. It is also possible to use a 1064 nm infrared pulse, continuous or quasi-continuous laser with a power selection of 10 to 35 W, a scanning speed of 1 to 1.2 m/s, and a spot diameter of 60 ⁇ m for laser scanning.
- a first anti-passivation film 30 is formed on the light-receiving surface 10a, and a second anti-passivation film 80 is formed on the back surface 10b.
- a low-temperature oxidation of the furnace tube is used to form a SiO 2 film layer, and the laser thermal damage is repaired.
- the SiO 2 film has a thickness of about 10 nm, an oxidation temperature of 600 to 800 ° C, and a time of 20 to 30 min.
- a SiNx film is prepared on the SiO 2 film layer by a PECVD process.
- first anti-passivation film 30 and the second anti-passivation film 80 are respectively composed of a SiO 2 film layer and a SiNx film.
- the first anti-passivation film 30 and the second anti-passivation film 80 may also include only one film layer, for example, only a SiO 2 film layer.
- a first electrode 91 and a second electrode 92 are formed by screen printing on the second anti-passivation film 80 and sintered, and the first electrode 91 and the second electrode 92 are formed.
- the second anti-passivation film 80 is electrically connected to the p++ heavily doped region 60 and the n++ heavily doped region 70, respectively. That is, the entire battery preparation process is completed.
- the above steps involve a chemical cleaning process, which may be a cleaning method such as RCA, SPM, HF/O 3 , HCl/HF.
- This embodiment differs from Embodiment 1 in that Step 2 and Step 3 in Embodiment 1 are used in this embodiment.
- the order is reversed, that is, after the P-type silicon substrate 10 is processed, the n+ doping region 50 and the n++ heavily doped region 70 are first prepared on the back surface 10b, see step 3 in the embodiment 1, and then on the light receiving surface 10a.
- the p+ doped layer 20, the p+ doped region 40, and the p++ heavily doped region 60 are prepared on the back side 10b, see step 2 in Example 1.
- the remaining steps are the same as those in Embodiment 1, and are not described herein again.
- the invention adopts a P-type silicon wafer as a substrate material, which is low in cost and universally applied.
- the backside flattening process that is, the backside polishing, facilitates the formation of a uniform PN junction and a PP+ high and low junction on the back side, while reducing the surface specific surface area and reducing surface recombination.
- the doping source is liquid or solid, safe and reliable, and is conducive to laser processing.
- laser doping has a short action time, easy to accurately position doping, differential doping, and reduce frontal gate line occlusion. The current is lost while the metal electrode forms a good ohmic contact with the heavily doped region.
- the laser non-destructive doping process is used to treat the doping source, mainly by utilizing the advantages of laser thermal effect, short thermal effect time, and precise positioning, and forming a specific region without causing obvious damage to the surface of the silicon wafer. Miscellaneous, avoiding the side effects of high temperature on P-type silicon wafer, simple process, convenient operation, greatly simplifying the preparation process of solar cells, and is more conducive to industrial application.
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Abstract
公开了一种基于P型硅衬底的背接触式太阳能电池,其包括一P型硅衬底(10),P型硅衬底(10)的受光面(10a)设置有掺杂硼的p+掺杂层(20),受光面(10a)上设置有第一减反钝化膜(30);P型硅衬底(10)的背面设置有多个掺杂硼的p+掺杂区(40)和多个掺杂磷n+掺杂区(50),每一p+掺杂区(40)中设置有一p++重掺杂区(60),每一n+掺杂区(50)中设置有一n++重掺杂区(70),背面上设置有第二减反钝化膜(80),第二减反钝化膜(80)上设置有相互绝缘的第一电极(91)和第二电极(92),第一电极(91)和第二电极(92)分别电性连接于p++重掺杂区(60)和n++重掺杂区(70)。采用P型硅片作为背接触式太阳能电池的衬底材料,P型硅片技术成熟,具有明显的成本优势。
Description
本发明涉及新结构太阳能电池制造领域,特别是涉及一种基于P型硅衬底的背接触式太阳能电池及其制备方法。
随着全球能源的短缺和气候变暖,太阳能发电等可再生能源正取代传统的火力发电,成为当今能源领域研究的热点和发展的趋势。在太阳能电池的发展历史中,非晶硅薄膜太阳能电池和晶体硅太阳能电池都已经历了近半个多世纪的发展历程。晶体硅太阳能电池效率较高,而非晶硅薄膜太阳能电池的制造成本较低。传统的P型硅衬底太阳能电池中,PN结采用高温扩散方式制备形成,PN结处于正面且电极分别处于太阳能电池两侧,受光面受到电极遮挡损失部分太阳光,导致部分效率损伤。同时,目前常规P型太阳电池转换效率几乎已达到瓶颈,人们逐渐转移至低成本、高效率、新结构、新工艺的太阳电池研究。
由于常规的太阳能电池受光面约有3.5%~4%左右的面积被正面金属栅线电极所遮挡,为了减少或去除正面电极遮挡导致的转换效率损伤,将正、负电极均设置在电池背面,即背接触式太阳能电池,其中最具代表性的是IBC(Interdigitated back contact)电池。
目前IBC电池的基体主要采用N型晶体硅,P型发射极主要采用高温硼源扩散工艺制备获得,即高纯氮气携带三溴化硼的方法。这种方法主要存在以下问题:1、BBr3反应生成B2O3,其沸点较高,高温下仍为液态,硅片表面覆盖均匀性差,容易造成扩散均匀性差的问题;2、硼扩散的温度较高,普遍在900℃~1000℃,对于P型硅片影响较大,容易导致少子寿命下降严重;3、目前N型硅棒拉棒技术的限制,其电阻率分布范围(1Ω·cm~12Ω·cm)远大于P型硅片(0.5Ω·cm~3Ω·cm),电池工艺管控较为复杂,同时N型硅片成本问题也是限制其大规模应用的重要因素。
发明内容
有鉴于此,本发明提供了一种基于P型硅衬底的背接触式太阳能电池及其制备方法,该太阳能电池中采用P型硅片作为背接触式太阳能电池的衬底材料,
其硅片技术成熟,具有明显的成本优势,同时,结合激光无损掺杂技术,使其制备方法更为简化,易于实现,有利于大规模的产业化应用。
为了达到上述目的,本发明采用了如下的技术方案:
一种基于P型硅衬底的背接触式太阳能电池,其包括一P型硅衬底,所述P型硅衬底具有相对的一受光面和一背面,所述受光面为经过织构化处理形成的绒面,所述背面为经过平坦化处理形成的平面;所述P型硅衬底的受光面设置有掺杂硼的p+掺杂层,所述受光面上设置有第一减反钝化膜;所述P型硅衬底的背面设置有依次交替排布的多个掺杂硼的p+掺杂区和多个掺杂磷n+掺杂区,每一p+掺杂区中设置有一p++重掺杂区,每一n+掺杂区中设置有一n++重掺杂区,所述背面上设置有第二减反钝化膜,所述第二减反钝化膜上设置有相互绝缘的第一电极和第二电极,所述第一电极穿过所述第二减反钝化膜电极连接于所述p++重掺杂区,所述第二电极穿过所述第二减反钝化膜电性连接于所述n++重掺杂区。
其中,所述第一电极和第二电极均为叉指状的金属电极。
其中,所述第一减反钝化膜和第二减反钝化膜为一层以上的薄膜。
其中,所述第一减反钝化膜和第二减反钝化膜的材料为SiO2、SiNx、TiO2、AlOx或MgF2。
相比于现有技术,本发明采用P型硅片为衬底材料,成本低且普遍应用。背面平坦化处理,即背面抛光,利于背面形成均匀PN结和PP+高低结,同时减小背面比表面积,降低表面复合。掺杂源采用液态或固态,安全可靠,同时利于激光处理;与常规热扩散相比,激光掺杂高温作用时间短,易于精确定位掺杂、差异化掺杂;背面正负电极设计,减小正面栅线遮挡导致的电流损失,同时金属电极与重掺杂区域形成良好的欧姆接触。
其中,采用激光扫描工艺,对掺杂源进行处理,主要利用激光的热效应、热效应作用时间短、可精确定位等优势,在不对硅片表面造成明显损伤的情况下,形成特定区域的掺杂,避免高温对P型硅片的副作用,工艺简单,操作方便,大大简化太阳电池制备工艺流程,更利于产业化应用。
图1是本发明实施例提供的太阳能电池的结构示意图。
图2是本发明实施例中背面电极的结构示意图。
图3是本发明实施例提供的太阳能电池的制备方法的工艺流程图。
图4a-图4i是本发明太阳能电池的制备方法的各步骤示例性图示。
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行详细地描述,显然,所描述的实施例仅仅是本发明一部分实例,而不是全部实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护范围。
如图1所示,本实施例首先提供了一种基于P型硅衬底的背接触式太阳能电池,其包括一P型硅衬底10,所述P型硅衬底10具有相对的一受光面10a和一背面10b,所述受光面10a为经过织构化处理形成的绒面,所述背面10b为经过平坦化处理形成的平面。所述P型硅衬底10的受光面10a设置有掺杂硼的p+掺杂层20,所述受光面10a上设置有第一减反钝化膜30。所述P型硅衬底10的背面10b设置有依次交替排布的多个掺杂硼的p+掺杂区40和多个掺杂磷n+掺杂区50,每一p+掺杂区40中设置有一p++重掺杂区60,每一n+掺杂区50中设置有一n++重掺杂区70。所述背面10b上设置有第二减反钝化膜80,所述第二减反钝化膜80上设置有相互绝缘的第一电极91和第二电极92,所述第一电极91穿过所述第二减反钝化膜80电性连接于所述p++重掺杂区60,所述第二电极92穿过所述第二减反钝化膜80电性连接于所述n++重掺杂区70。
其中,所述p+掺杂层20的方块电阻不大于60Ω/□,所述p+掺杂区40的方块电阻不大于60Ω/□,所述p++重掺杂区60的方块电阻不大于40Ω/□,所述n+掺杂区50的方块电阻不大于50Ω/□,所述n++重掺杂区70的方块电阻不大于30Ω/□。
其中,如图2所示的,所述第一电极91和第二电极92均为叉指状的金属电极。
其中,所述第一减反钝化膜30和第二减反钝化膜80为一层以上的薄膜,其材料为SiO2、SiNx、TiO2、AlOx。例如,第一减反钝化膜30和第二减反钝化膜80可以是一层SiO2薄膜;或者是,第一减反钝化膜30和第二减反钝化膜80包括一层SiO2薄膜以及覆设于SiO2薄膜上的SiNx薄膜。
下面介绍如上所述的太阳能电池的制备方法,如图3所示,该方法包括步骤:
(a)提供一P型硅衬底,对所述P型硅衬底的受光面进行织构化处理形成绒面,对所述P型硅衬底的背面进行平坦化处理形成平面。
(b)在所述受光面上涂覆或沉积硼源材料,应用激光掺杂工艺使硼源材料中的硼扩散到所述P型硅衬底中,在所述受光面获得掺杂硼的p+掺杂层。其中,所述硼源材料选自硼酸溶液、硼硅玻璃、含硼氮化硅、含硼氧化硅或含硼非晶硅中的任意一种。
(c)在所述背面上涂覆或沉积硼源材料,应用激光掺杂工艺使硼源材料中的硼扩散到所述P型硅衬底中,在所述背面获得多个掺杂硼的p+掺杂区并在每一p+掺杂区中形成一p++重掺杂区。其中,所述硼源材料选自硼酸溶液、硼硅玻璃、含硼氮化硅、含硼氧化硅或含硼非晶硅中的任意一种。
(d)在所述背面上涂覆或沉积磷源材料,应用激光掺杂工艺使磷源材料中的磷扩散到所述P型硅衬底中,在所述背面获得多个掺杂磷的n+掺杂区并在每一n+掺杂区中形成一n++重掺杂区。所述磷源材料选自磷酸溶液、磷硅玻璃、含磷氮化硅、含磷氧化硅或含磷非晶硅中的任意一种。
(e)在所述受光面上制备第一减反钝化膜,在所述背面上制备第二减反钝化膜。
(f)在所述第二减反钝化膜上制备第一电极和第二电极。可通过丝网印刷、光诱导电镀、化学电镀等工艺制备第一电极和第二电极并进行烧结处理。
需要说明的是,以上制备方法中的(b)、(c)和(d)这三个步骤,其先后顺序没有任何限制。例如可以是依次为(b)、(c)、(d)的顺序,也可以是依次为(d)、(b)、(c)的顺序,也可以是依次为(c)、(b)、(d)的顺序。
其中,所述激光掺杂工艺中,选用激光出光模式可以为脉冲、连续、准连续等,激光波长可以选择为355~1064nm,功率可以选择为5~100W,光斑直径可以选择为30~200μm。选用脉冲激光时,其激光脉冲宽度的范围可以选择是30~300ns。
以上制备方法中的步骤(c)和(d),对于p++重掺杂区和n++重掺杂区,可以按照以下方式制备形成:
方式一、以步骤(c)中制备p++重掺杂区为例,通过设置激光扫描***自动切换工艺参数,由一次激光掺杂工艺在制备获得所述p+掺杂区的同时,在所述p+掺杂区中形成所述p++重掺杂区。具体地,在开始扫描时,激光扫描***
的工艺参数为制备p+掺杂区的参数,当扫描到预定制备p++重掺杂区的位置时,激光扫描***自动切换到制备p++重掺杂区的工艺参数,扫描制备完成p++重掺杂区之后,激光扫描***又自动切换到制备p+掺杂区的参数,直至最终制备完成p+掺杂区。同理,步骤(d)中制备n++重掺杂区也是按照前述的方式进行。
方式二、以步骤(c)中制备p++重掺杂区为例,首先通过一次激光掺杂工艺制备获得所述p+掺杂区,然后在所述p+掺杂区中预定制备p++重掺杂区的位置进行二次激光掺杂工艺,形成所述p++重掺杂区。同理,步骤(d)中制备n++重掺杂区也是按照前述的方式进行。
实施例1
1、如图4a所示,首先提供一P型硅衬底10,其包括相对的受光面10a和背面10b。对P型硅衬底10的受光面10a进行表面织构化处理:具体地,可以采用氢氧化钾或氢氧化钠、IPA和制绒添加剂的混合溶液,进行表面处理,表面呈金字塔形状的绒面结构;织构化处理完成后对硅衬底10进行化学清洗。对P型硅衬底10的背面10b进行平坦化处理:具体地,首先在受光面10a采用SiO2、SiNx等保护介质膜,然后直接在氢氧化钾或氢氧化钠碱溶液(10%质量分数)中进行背面腐蚀,或采用HF/HNO3混酸溶液进行背面腐蚀,腐蚀完成后对硅衬底10进行化学清洗。
2、如图4b所示,在受光面10a和背面10b分别涂覆硼源材料10c,可以选用硼酸溶液或其他含硼有机溶剂。在另外的实施例中,还可以通过CVD沉积工艺沉积硼硅玻璃、含硼氮化硅、含硼氧化硅或含硼非晶硅形成薄膜层的硼源材料10c。烘干硼源材料10c后,如图4c和4d所示,在受光面10a激光扫描形成p+掺杂层(PP+高低结)20,在背面10b局部区域激光扫描,获得多个掺杂硼的p+掺杂区(PP+高低结)40并在每一p+掺杂区40中形成一p++重掺杂区60,然后通过化学清洗去除残留硼掺杂源,并吹干。其中受光面10a的p+掺杂层20的方块电阻不高于60Ω/□,背面10b的p+掺杂区40的方块电阻不高于60Ω/□,可以采用波长为532nm绿光脉冲、连续或准连续激光,功率为18W,扫描速度1.2m/s,光斑直径为50μm。P++重掺杂区60的方块电阻不高于40Ω/□,可以采用波长为532nm绿光脉冲、连续或准连续激光,功率为20W,扫描速度1m/s,光斑直径为50μm。在另外的一些实施例中,可以采用355nm紫外脉冲、连续或准连续激光,功率选择在5~15W,扫描速度选择在1~1.2m/s,光斑直径选择为40μm进行激光扫描处理。也可以采用1064nm红外脉冲、连续或准连续激光,功率选择在10~35W,扫描速度选择为1~1.2m/s,光斑直径为60μm进行激光扫描处理。
3、如图4e所示,在背面10b涂覆磷源材料10d,可以选用磷酸溶液或其他含磷有机溶剂。在另外的实施例中,还可以通过CVD沉积工艺沉积磷硅玻璃、含磷氮化硅、含磷氧化硅或含磷非晶硅形成薄膜层的磷源材料10d。烘干磷源材料10d后,如图4f和4g所示,通过激光在相应区域扫描形成多个掺杂磷的n+掺杂区50(与衬底形成PN结),并在每一n+掺杂区50中形成一n++重掺杂区70,然后通过化学清洗去除残留磷掺杂源,并吹干。其中,多个掺杂硼的p+掺杂区40和多个掺杂磷n+掺杂区50是相互交替排布的。其中n+掺杂区50的方块电阻不高于50Ω/□,可以采用532nm绿光脉冲、连续或准连续激光,功率为12W,扫描速度为1.2m/s,光斑直径为50μm。n++重掺杂区70的方块电阻不高于30Ω/□,可以采用532nm绿光脉冲、连续或准连续激光,功率为18W,扫描速度为1.2m/s,光斑直径为50um。在另外的一些实施例中,可以采用355nm紫外脉冲、连续或准连续激光,功率选择在5~15W,扫描速度选择在1~1.2m/s,光斑直径选择为40μm进行激光扫描处理。也可以采用1064nm红外脉冲、连续或准连续激光,功率选择在10~35W,扫描速度选择为1~1.2m/s,光斑直径为60μm进行激光扫描处理。
4、如图4h所示,在受光面10a上制备第一减反钝化膜30,在背面10b上制备第二减反钝化膜80。具体地,首先在受光面10a和背面10b上采用炉管干氧低温氧化生成SiO2薄膜层,同时修复激光热损伤。SiO2薄膜的厚度约为10nm,氧化温度为600~800℃,时间20~30min。然后在SiO2薄膜层上采用PECVD工艺制备一层SiNx薄膜,最终,第一减反钝化膜30和第二减反钝化膜80分别由一层SiO2薄膜层和一层SiNx薄膜构成。在另外的一些实施例中,第一减反钝化膜30和第二减反钝化膜80也可以是仅仅包含一层薄膜层,例如可以仅仅是SiO2薄膜层。在另外一些实施例中,也可以是采用PECVD或ALD工艺先沉积一层氧化铝钝化膜代替如上的SiO2薄膜层,然后在沉积一层SiNx薄膜。
5、如图4i所示,在第二减反钝化膜80上丝网印刷形成第一电极91和第二电极92(正、负电极)并烧结处理,第一电极91和第二电极92分别穿透第二减反钝化膜80电性连接于p++重掺杂区60和n++重掺杂区70。即完成整个电池制备流程。
其中,以上步骤中涉及化学清洗工艺的,其可以为RCA、SPM、HF/O3、HCl/HF等清洗方法。
实施例2
本实施例与实施例1不同的是,本实施例中将实施例1中的步骤2和步骤3
的顺序进行调换,即在处理完成P型硅衬底10之后,首先在背面10b制备n+掺杂区50和n++重掺杂区70,参阅实施例1中的步骤3;然后再在受光面10a和背面10b制备p+掺杂层20、p+掺杂区40和p++重掺杂区60,参阅实施例1中的步骤2。其余步骤与实施例1中的相同,在此不再赘述。
相比于现有技术,本发明采用P型硅片为衬底材料,成本低且普遍应用。背面平坦化处理,即背面抛光,利于背面形成均匀PN结和PP+高低结,同时减小背面比表面积,降低表面复合。掺杂源采用液态或固态,安全可靠,同时利于激光处理;与常规热扩散相比,激光掺杂高温作用时间短,易于精确定位掺杂、差异化掺杂,减小正面栅线遮挡导致的电流损失,同时金属电极与重掺杂区域形成良好的欧姆接触。
其中,采用激光无损掺杂工艺,对掺杂源进行处理,主要利用激光的热效应、热效应作用时间短、可精确定位等优势,在不对硅片表面造成明显损伤的情况下,形成特定区域的掺杂,避免高温对P型硅片的副作用,工艺简单,操作方便,大大简化太阳电池制备工艺流程,更利于产业化应用。
以上所述仅是本申请的具体实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本申请原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本申请的保护范围。
Claims (4)
- 一种基于P型硅衬底的背接触式太阳能电池,其中,包括一P型硅衬底,所述P型硅衬底具有相对的一受光面和一背面,所述受光面为经过织构化处理形成的绒面,所述背面为经过平坦化处理形成的平面;所述P型硅衬底的受光面设置有掺杂硼的p+掺杂层,所述受光面上设置有第一减反钝化膜;所述P型硅衬底的背面设置有依次交替排布的多个掺杂硼的p+掺杂区和多个掺杂磷n+掺杂区,每一p+掺杂区中设置有一p++重掺杂区,每一n+掺杂区中设置有一n++重掺杂区,所述背面上设置有第二减反钝化膜,所述第二减反钝化膜上设置有相互绝缘的第一电极和第二电极,所述第一电极穿过所述第二减反钝化膜电性连接于所述p++重掺杂区,所述第二电极穿过所述第二减反钝化膜电性连接于所述n++重掺杂区。
- 根据权利要求1所述的太阳能电池,其中,所述第一电极和第二电极均为叉指状的金属电极。
- 根据权利要求1所述的太阳能电池,其中,所述第一减反钝化膜和第二减反钝化膜为一层以上的薄膜,
- 根据权利要求3所述的太阳能电池,其中,所述第一减反钝化膜和第二减反钝化膜的材料为SiO2、SiNx、TiO2、AlOx或MgF2。
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CN114582992A (zh) * | 2022-03-04 | 2022-06-03 | 四川蜀旺新能源股份有限公司 | 超掺杂硅太阳能电池及其制备方法、以及真空镀膜装置 |
CN117096224A (zh) * | 2023-10-19 | 2023-11-21 | 常州亿晶光电科技有限公司 | 一种p型ibc电池的制备方法 |
CN117577708A (zh) * | 2024-01-17 | 2024-02-20 | 金阳(泉州)新能源科技有限公司 | 基于p型硅片的联合钝化背接触电池及其制备和光伏组件 |
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CN204834653U (zh) * | 2015-08-06 | 2015-12-02 | 黄河水电光伏产业技术有限公司 | 基于p型硅衬底的背接触式太阳能电池 |
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