WO2017016014A1 - Coa阵列基板及液晶面板 - Google Patents

Coa阵列基板及液晶面板 Download PDF

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Publication number
WO2017016014A1
WO2017016014A1 PCT/CN2015/087958 CN2015087958W WO2017016014A1 WO 2017016014 A1 WO2017016014 A1 WO 2017016014A1 CN 2015087958 W CN2015087958 W CN 2015087958W WO 2017016014 A1 WO2017016014 A1 WO 2017016014A1
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Prior art keywords
substrate
tft
array substrate
layer
liquid crystal
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PCT/CN2015/087958
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English (en)
French (fr)
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祝秀芬
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深圳市华星光电技术有限公司
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Priority to US14/786,161 priority Critical patent/US20170153521A1/en
Publication of WO2017016014A1 publication Critical patent/WO2017016014A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133354—Arrangements for aligning or assembling substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
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    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Definitions

  • the present invention relates to the field of liquid crystal display technologies, and in particular, to a COA array substrate and a liquid crystal panel.
  • LCDs liquid crystal displays
  • Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become mainstream in display devices.
  • liquid crystal displays which include a liquid crystal panel and a backlight module.
  • a liquid crystal panel is composed of a color filter substrate (CF), a thin film transistor array substrate (Thin Film Transistor Array Substrate, TFT Array Substrate), and a liquid crystal layer (Liquid Crystal Layer) disposed between the two substrates.
  • the principle is to control the orientation of the liquid crystal molecules in the liquid crystal layer by applying an electric voltage on the two substrates, and to refract the light of the backlight module to produce a picture.
  • a conventional liquid crystal panel is prepared with a black matrix (BM), a color resist layer containing red, green, and blue resistors, and a common electrode on the side of the color filter substrate, and TFTs and pixels are prepared on the side of the array substrate. Electrodes, etc.
  • BM black matrix
  • a color resist layer containing red, green, and blue resistors and a common electrode on the side of the color filter substrate
  • TFTs and pixels are prepared on the side of the array substrate. Electrodes, etc.
  • Such a conventional liquid crystal panel is limited by the alignment accuracy of the array substrate and the color filter substrate, and the aperture ratio of the pixel is affected.
  • the color resist layer can be integrated on one side of the array substrate, that is, COA (Color Filter On Array) technology.
  • the current mainstream COA array substrate generally has a black matrix and a color resist layer formed under the pixel electrode.
  • the specific structure is as shown in FIG. 1 , and includes a substrate 100 , a color resist layer 700 disposed on the front surface of the substrate 100 , and a black matrix 800 .
  • the pixel electrode 1000 contacts the drain of the TFT through the passivation protective layer 900, the black matrix 800, and the via 987 of the color resist layer 700.
  • the black matrix 800 has a larger thickness than the thickness of the color resist layer 700, it is difficult to form the via 987 penetrating the passivation protective layer 900, the black matrix 800, and the color resist layer 700.
  • the size of the via 987 is not easy to control accurately, and the height difference between the bottom and the top of the via 987 is large, which tends to cause poor alignment of the corresponding region of the via 987, and light leakage is likely to occur.
  • the object of the present invention is to provide a COA array substrate, which can solve the problem of high alignment requirements of the conventional array substrate and the color film substrate, improve the aperture ratio, and is easy to manufacture and avoid light leakage.
  • Another object of the present invention is to provide a liquid crystal panel which has a high aperture ratio and is easy to manufacture.
  • the present invention provides a COA array substrate, comprising: a substrate, a TFT disposed on a front surface of the substrate, a passivation protective layer covering the TFT, a pixel electrode disposed on the passivation protective layer, a black matrix disposed on the back surface of the substrate, and a color resist layer covering the black matrix and the back surface of the substrate;
  • the pixel electrode contacts the TFT via a via hole penetrating the passivation protective layer.
  • the TFT includes a gate electrode disposed on a front surface of the substrate, a gate insulating layer covering the gate and the front surface of the substrate, a semiconductor layer disposed on the gate insulating layer above the gate, and The gate insulating layer respectively contacts the source and the drain on both sides of the semiconductor layer;
  • the passivation protective layer covers the source, the drain, the semiconductor layer, and the gate insulating layer; the pixel electrode contacts the drain of the TFT via a via penetrating the passivation protective layer.
  • the material of the black matrix is an acrylic black photoresist.
  • the color resist layer includes at least a red color resist, a green color resist, and a blue color resist.
  • the substrate is a glass substrate.
  • the material of the gate, the source, and the drain is a stack combination of one or more of molybdenum, titanium, aluminum, copper, and nickel.
  • the material of the gate insulating layer and the passivation protective layer is silicon oxide, silicon nitride, or a combination of the two.
  • the material of the pixel electrode is ITO.
  • the material of the semiconductor layer is one of an amorphous silicon semiconductor, a low temperature polysilicon semiconductor, and a metal oxide semiconductor.
  • the present invention also provides a liquid crystal panel comprising an array substrate, a color filter substrate, and a liquid crystal layer disposed between the array substrate and the color filter substrate, wherein the array substrate is the COA array substrate.
  • a COA array substrate and a liquid crystal panel have a black matrix and a color resist layer disposed on a back surface of a substrate, and a TFT, a passivation protective layer and a pixel electrode are disposed on a front surface of the substrate, and the pixel electrode passes through
  • the via of the passivation protective layer contacts the TFT, which can solve the problem of high alignment requirements of the conventional array substrate and the color film substrate, and improve the aperture ratio without the need for a black matrix and color.
  • the hole of the resist layer can realize the connection between the pixel electrode and the drain of the TFT, and is easy to manufacture and avoid light leakage.
  • 1 is a schematic structural view of a conventional COA array substrate
  • FIG. 2 is a schematic structural view of a COA array substrate of the present invention.
  • the present invention provides a COA array substrate, comprising a substrate 1, a TFT T disposed on a front surface of the substrate 1, a passivation protective layer 6 covering the TFT T, and a passivation protective layer 6 disposed on the substrate.
  • the color resist layer 9 covers the black matrix 8 and the back surface of the substrate 1, which can solve the problem that the alignment between the conventional array substrate and the color film substrate is high.
  • the problem is to avoid the alignment error in the assembly process and increase the aperture ratio.
  • the TFT T includes a gate electrode 2 disposed on the front surface of the substrate 1 , a gate insulating layer 3 covering the front surface of the gate electrode 2 and the substrate 1 , and a gate insulating layer disposed above the gate electrode 2 .
  • the semiconductor layer 4 on the third layer and the source insulating layer 3 and the drain electrode 52 on both sides of the semiconductor layer 4 are respectively provided on the gate insulating layer 3.
  • the passivation protective layer 6 covers the source 51, the drain 52, the semiconductor layer 4, and the gate insulating layer 3.
  • the pixel electrode 7 contacts the drain 52 of the TFTT via a via 61 penetrating the passivation protective layer 6. Since the pixel electrode 7 can connect the drain electrode 52 of the TFT T only through the via hole 61 penetrating the passivation protective layer 6, it is not necessary to open the black matrix and the color resist layer as in the conventional COA array substrate.
  • the passivation protective layer 6 has a small thickness and is easy to open. The size of the via 61 is easy to be controlled more accurately, and the height difference between the bottom and the top of the via 61 is small, and the via can be ensured. 61 The normal alignment of the corresponding area is not easy to cause light leakage.
  • the material of the black matrix 8 is an acrylic black photoresist.
  • the color resist layer 9 includes at least a red color resist, a green color resist, and a blue color resist. It is necessary to add white photoresist or yellow photoresist.
  • the substrate 1 is a glass substrate.
  • the material of the gate 2, the source 51, and the drain 52 is a stack of one or more of molybdenum (Mo), titanium (Ti), aluminum (Al), copper (Cu), and nickel (Ni). combination.
  • the material of the gate insulating layer 3 and the passivation protective layer 6 is silicon oxide (SiOx), silicon nitride (SiNx), or a combination of the two.
  • the material of the pixel electrode 7 is Indium Tin Oxide (ITO).
  • the material of the semiconductor layer 4 is one of an amorphous silicon semiconductor, a low temperature polysilicon semiconductor, and a metal oxide semiconductor.
  • the present invention also provides a liquid crystal panel comprising an array substrate, a color filter substrate, and a liquid crystal layer disposed between the array substrate and the color filter substrate, wherein the array substrate is the COA array substrate as shown in FIG. No repeated description will be made.
  • the black matrix and the color resist layer are provided on the back surface of the substrate, and the TFT, the passivation protective layer and the pixel electrode are disposed on the front surface of the substrate, and the pixel electrode passes through the passivation.
  • the via of the protective layer contacts the TFT, which can solve the problem of high alignment requirements of the conventional array substrate and the color film substrate, improve the aperture ratio, and does not need to be opened in the black matrix and the color resist layer.
  • the connection between the pixel electrode and the drain of the TFT can be realized, which is easy to manufacture and avoids light leakage.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

一种COA阵列基板及液晶面板。COA阵列基板包括基板(1)、设于基板(1)正面的TFT(T)、覆盖TFT(T)的钝化保护层(6)、设于钝化保护层(6)上的像素电极(7)、正对TFT(T)设于基板(1)背面的黑色矩阵(8)、以及覆盖黑色矩阵(8)与基板(1)背面的色阻层(9)；像素电极(7)经由贯穿钝化保护层(6)的过孔(61)接触TFT(T)。COA阵列基板既能够解决传统的阵列基板和彩膜基板对位要求高的问题，提高开口率，又无需在黑色矩阵(8)与色阻层(9)开孔即可实现像素电极(7)与TFT(T)的漏极(52)的连接，易于制作，避免漏光。

Description

COA阵列基板及液晶面板 技术领域
本发明涉及液晶显示技术领域，尤其涉及一种COA阵列基板及液晶面板。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
现有市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶面板及背光模组(backlight module)。通常液晶面板由彩膜基板(Color Filter，CF)、薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)、以及一配置于两基板间的液晶层(Liquid Crystal Layer)所构成，其工作原理是通过在两片基板上施加驱动电压，由两片基板之间产生的电场来控制液晶层内液晶分子的取向，将背光模组的光线折射出来产生画面。
通常，传统的液晶面板在彩膜基板一侧制备有黑色矩阵(Black Matrix，BM)、包含红、绿、蓝色阻的色阻层、及公共电极等，在阵列基板一侧制备TFT、像素电极等。这种传统的液晶面板受阵列基板和彩膜基板对位精度的限制，像素的开口率受到影响。
为了解决阵列基板和彩膜基板对位要求高的问题，提高开口率，可将色阻层集成制作于阵列基板一侧，即采用COA(Color Filter On Array)技术。
现有的主流COA阵列基板一般是将黑色矩阵和色阻层制备于像素电极下面，其具体结构如图1所示，包括基板100、设于基板100正面的色阻层700和黑色矩阵800、设于所述黑色矩阵800上的钝化保护层900、及设于钝化保护层900上的像素电极1000。所述像素电极1000通过贯穿所述钝化保护层900、黑色矩阵800、与色阻层700的过孔987接触TFT的漏极。
由于黑色矩阵800、与色阻层700的厚度相比其它膜层的厚度较大，制作贯穿所述钝化保护层900、黑色矩阵800、与色阻层700的过孔987较困难，所述过孔987的大小不易精准控制，且过孔987底部与顶部的高度差较大，容易造成过孔987对应区域的配向不良，容易产生漏光。
发明内容
本发明的目的在于提供一种COA阵列基板，既能够解决传统的阵列基板和彩膜基板对位要求高的问题，提高开口率，又易于制作，避免漏光。
本发明的目的还在于提供一种液晶面板，开口率高，易于制作。
为实现上述目的，本发明提供一种COA阵列基板，包括：基板、设于所述基板正面的TFT、覆盖所述TFT的钝化保护层、设于所述钝化保护层上的像素电极、正对所述TFT设于所述基板背面的黑色矩阵、以及覆盖所述黑色矩阵与基板背面的色阻层；
所述像素电极经由贯穿所述钝化保护层的过孔接触所述TFT。
所述TFT包括设于所述基板正面的栅极、覆盖所述栅极与基板正面的栅极绝缘层、于所述栅极上方设于栅极绝缘层上的半导体层、以及设于所述栅极绝缘层上分别接触半导体层两侧的源极与漏极；
所述钝化保护层覆盖所述源极、漏极、半导体层、与栅极绝缘层；所述像素电极经由贯穿所述钝化保护层的过孔接触所述TFT的漏极。
所述黑色矩阵的材料为亚克力黑色光阻。
所述色阻层至少包括红色色阻、绿色色阻、及蓝色色阻。
所述基板为玻璃基板。
所述栅极、源极、与漏极的材料为钼、钛、铝、铜、镍中的一种或几种的堆栈组合。
所述栅极绝缘层与钝化保护层的材料为氧化硅、氮化硅、或二者的组合。
所述像素电极的材料为ITO。
所述半导体层的材料为非晶硅半导体、低温多晶硅半导体、金属氧化物半导体中的一种。
本发明还提供一种液晶面板，包括阵列基板、彩膜基板及设置在所述阵列基板与彩膜基板间的液晶层，所述阵列基板为上述COA阵列基板。
本发明的有益效果：本发明提供的一种COA阵列基板及液晶面板，将黑色矩阵与色阻层设置于基板背面，将TFT、钝化保护层与像素电极设置于基板正面，像素电极通过贯穿所述钝化保护层的过孔接触所述TFT，相比于现有技术，既能够解决传统的阵列基板和彩膜基板对位要求高的问题，提高开口率，又无需在黑色矩阵与色阻层开孔即可实现像素电极与TFT的漏极的连接，易于制作，避免漏光。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本 发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的COA阵列基板的结构示意图；
图2为本发明的COA阵列基板的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明提供一种COA阵列基板，包括基板1、设于所述基板1正面的TFT T、覆盖所述TFT T的钝化保护层6、设于所述钝化保护层6上的像素电极7、正对所述TFT T设于所述基板1背面的黑色矩阵8、以及覆盖所述黑色矩阵8与基板1背面的色阻层9；所述像素电极7经由贯穿所述钝化保护层6的过孔61接触所述TFT T。
由于将黑色矩阵8正对所述TFT T设于所述基板1的背面，色阻层9覆盖所述黑色矩阵8与基板1背面，能够解决传统的阵列基板和彩膜基板对位要求高的问题，避免组立制程中的对位误差，提高开口率。
具体地，所述TFT T包括设于所述基板1正面的栅极2、覆盖所述栅极2与基板1正面的栅极绝缘层3、于所述栅极2上方设于栅极绝缘层3上的半导体层4、以及设于所述栅极绝缘层3上分别接触半导体层4两侧的源极51与漏极52。
所述钝化保护层6覆盖所述源极51、漏极52、半导体层4、与栅极绝缘层3。所述像素电极7经由贯穿所述钝化保护层6的过孔61接触所述TFTT的漏极52。由于像素电极7仅通过贯穿所述钝化保护层6的过孔61即可连接所述TFT T的漏极52，无需像现有的COA阵列基板那样在黑色矩阵与色阻层开孔，而钝化保护层6的厚度较小，开孔较容易，所述过孔61的大小易于进行较精准的控制，且所述过孔61底部与顶部的高度差较小，能够保证所述过孔61对应区域的正常配向，不易产生漏光。
所述黑色矩阵8的材料为亚克力黑色光阻。
所述色阻层9至少包括红色色阻、绿色色阻、及蓝色色阻，还可按显 示需要增加白色光阻、或黄色光阻。
所述基板1为玻璃基板。
所述栅极2、源极51、与漏极52的材料为钼(Mo)、钛(Ti)、铝(Al)、铜(Cu)、镍(Ni)中的一种或几种的堆栈组合。
所述栅极绝缘层3与钝化保护层6的材料为氧化硅(SiOx)、氮化硅(SiNx)、或二者的组合。
所述像素电极7的材料为铟锡氧化物(Indium Tin Oxide，ITO)。
所述半导体层4的材料为非晶硅半导体、低温多晶硅半导体、金属氧化物半导体中的一种。
本发明还提供一种液晶面板，包括阵列基板、彩膜基板及设置在所述阵列基板与彩膜基板间的液晶层，所述阵列基板为上述如图2所示的COA阵列基板，此处不再进行重复描述。
综上所述，本发明的COA阵列基板及液晶面板，将黑色矩阵与色阻层设置于基板背面，将TFT、钝化保护层与像素电极设置于基板正面，像素电极通过贯穿所述钝化保护层的过孔接触所述TFT，相比于现有技术，既能够解决传统的阵列基板和彩膜基板对位要求高的问题，提高开口率，又无需在黑色矩阵与色阻层开孔即可实现像素电极与TFT的漏极的连接，易于制作，避免漏光。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (18)

  1. 一种COA阵列基板，包括基板、设于所述基板正面的TFT、覆盖所述TFT的钝化保护层、设于所述钝化保护层上的像素电极、正对所述TFT设于所述基板背面的黑色矩阵、以及覆盖所述黑色矩阵与基板背面的色阻层；
    所述像素电极经由贯穿所述钝化保护层的过孔接触所述TFT。
  2. 如权利要求1所述的COA阵列基板，其中，所述TFT包括设于所述基板正面的栅极、覆盖所述栅极与基板正面的栅极绝缘层、于所述栅极上方设于栅极绝缘层上的半导体层、以及设于所述栅极绝缘层上分别接触半导体层两侧的源极与漏极；
    所述钝化保护层覆盖所述源极、漏极、半导体层、与栅极绝缘层；所述像素电极经由贯穿所述钝化保护层的过孔接触所述TFT的漏极。
  3. 如权利要求1所述的COA阵列基板，其中，所述黑色矩阵的材料为亚克力黑色光阻。
  4. 如权利要求1所述的COA阵列基板，其中，所述色阻层至少包括红色色阻、绿色色阻、及蓝色色阻。
  5. 如权利要求1所述的COA阵列基板，其中，所述基板为玻璃基板。
  6. 如权利要求2所述的COA阵列基板，其中，所述栅极、源极、与漏极的材料为钼、钛、铝、铜、镍中的一种或几种的堆栈组合。
  7. 如权利要求2所述的COA阵列基板，其中，所述栅极绝缘层与钝化保护层的材料为氧化硅、氮化硅、或二者的组合。
  8. 如权利要求2所述的COA阵列基板，其中，所述像素电极的材料为ITO。
  9. 如权利要求2所述的COA阵列基板，其中，所述半导体层的材料为非晶硅半导体、低温多晶硅半导体、金属氧化物半导体中的一种。
  10. 一种液晶面板，包括阵列基板、彩膜基板及设置在所述阵列基板与彩膜基板间的液晶层，其特征在于，所述阵列基板为COA阵列基板，包括基板、设于所述基板正面的TFT、覆盖所述TFT的钝化保护层、设于所述钝化保护层上的像素电极、正对所述TFT设于所述基板背面的黑色矩阵、以及覆盖所述黑色矩阵与基板背面的色阻层；
    所述像素电极经由贯穿所述钝化保护层的过孔接触所述TFT。
  11. 如权利要求10所述的液晶面板，其中，所述TFT包括设于所述基 板正面的栅极、覆盖所述栅极与基板正面的栅极绝缘层、于所述栅极上方设于栅极绝缘层上的半导体层、以及设于所述栅极绝缘层上分别接触半导体层两侧的源极与漏极；
    所述钝化保护层覆盖所述源极、漏极、半导体层、与栅极绝缘层；所述像素电极经由贯穿所述钝化保护层的过孔接触所述TFT的漏极。
  12. 如权利要求10所述的液晶面板，其中，所述黑色矩阵的材料为亚克力黑色光阻。
  13. 如权利要求10所述的液晶面板，其中，所述色阻层至少包括红色色阻、绿色色阻、及蓝色色阻。
  14. 如权利要求10所述的液晶面板，其中，所述基板为玻璃基板。
  15. 如权利要求11所述的液晶面板，其中，所述栅极、源极、与漏极的材料为钼、钛、铝、铜、镍中的一种或几种的堆栈组合。
  16. 如权利要求11所述的液晶面板，其中，所述栅极绝缘层与钝化保护层的材料为氧化硅、氮化硅、或二者的组合。
  17. 如权利要求11所述的液晶面板，其中，所述像素电极的材料为ITO。
  18. 如权利要求11所述的液晶面板，其中，所述半导体层的材料为非晶硅半导体、低温多晶硅半导体、金属氧化物半导体中的一种。
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