WO2017010637A1 - 3진수 논리회로 - Google Patents
3진수 논리회로 Download PDFInfo
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- WO2017010637A1 WO2017010637A1 PCT/KR2015/014377 KR2015014377W WO2017010637A1 WO 2017010637 A1 WO2017010637 A1 WO 2017010637A1 KR 2015014377 W KR2015014377 W KR 2015014377W WO 2017010637 A1 WO2017010637 A1 WO 2017010637A1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
- G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
- G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
- G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
- G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
- G06F7/49—Computations with a radix, other than binary, 8, 16 or decimal, e.g. ternary, negative or imaginary radices, mixed radix non-linear PCM
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
- H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/09425—Multistate logic
- H03K19/09429—Multistate logic one of the states being the high impedance or floating state
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
Definitions
- the present invention relates to a ternary logic circuit, and more particularly, by forming a ternary logic gate in the same circuit configuration as a CMOS based binary logic gate using a junction BTBT leakage current and a threshold current mechanism in an off state. It is about a ternary logic circuit that can increase the density.
- the present invention overcomes the limitation of the bit density faced by binary logic, and proposes a low power ternary logic circuit having a simple configuration, deviating from the complicated circuit of the conventional ternary logic.
- both the pull-up device 100 and the pull-down device 200 operate with a simple resistor that is only affected by the output voltage V OUT , and through the voltage distribution a third binary number (“1” state) is obtained. If only one of the pull-up device 100 or the pull-down device 200 is turned on to flow current, V DD (“2” state) or GND (“0” state) is outputted to the output voltage V OUT . It is characterized by.
- the ternary logic circuit according to the present invention can significantly increase the bit density by making a ternary logic gate in the same circuit configuration as a CMOS-based binary logic gate using the junction BTBT leakage current and threshold current mechanism in the off state. It works.
- FIG. 1 is a block diagram of a ternary logic circuit according to the present invention composed of pull-up and pull-down elements, and a graph of output current-input voltage characteristics of pull-up and pull-down elements;
- FIG. 2 is a view showing the operating principle of the STI according to the output current-output voltage characteristics of the pull-up device and the pull-down device;
- Figure 5 shows the output current-input voltage characteristics and voltage transfer curve according to channel doping
- FIG. 1 is a block diagram of a ternary logic circuit according to the present invention composed of a pull-up and pull-down device.
- the ternary logic circuit according to the present invention includes a pull-up device 100 and a pull-down device 200.
- Complementary current-voltage characteristics for the operation of the ternary logic circuit according to the present invention can be expressed by the following equation.
- Equation 1 ⁇ and ⁇ are exponential coefficients of each current mechanism, and + and ⁇ signs before the ⁇ and ⁇ are applied to the pull-down element 200 and the pull-up element 100, respectively.
- I MAX I E exp [ ⁇ (V DD / 2)] is the same for both the pull-down device 200 and the pull-up device 100.
- the pull-up device 100 or the pull-down device 200 may have V IN > V IL (FIG. 2 ⁇ a>) or V IN > V IH (FIG. In the range 2 ⁇ b>), I dominant current of I EXP is shown as I OUT to I EXP , creating a current path at GND (V OL ) or operating voltage (V DD ) (V OH ) respectively.
- the pull-up device 100 and the pull-down device 200 have an output current I OUT of which the constant current I CON and the exponent are increased. Similar as the sum of the current I EXP , this can lead to a slow transition.
- V OM V DD / 2 within the range V IMH ⁇ V IN ⁇ V IML , where the pull-up device 100 and pull-down device
- the output current I OUT of 200 is governed only by the constant current I COM (FIG. 2B).
- Equation 2 Equation 3
- V IL , V IH , V IML and V IMH are determined by the combination of the current equations of the pull-up device 100 and the pull-down device 200.
- V IL ⁇ V DD , V IML > V DD / 2, V IMH ⁇ V DD / 2, and V IH > 0 (GND) must be met. the next criterion for ⁇ .
- I MAX 10 -5 A
- I C 10 -8 A
- V IM according to [Equation 2] and a transition voltage by [Equation 3] are changed.
- the low transition voltage (V TR ) and the high V IM in the range of ⁇ ′ and ⁇ ′ given by Equation 4 are larger than ⁇ ′ and smaller ⁇ ′. Can be obtained, which is desirable for the voltage transfer curve of an ideal standard ternary inverter (STI).
- STI ternary inverter
- both the pull-up device 100 and the pull-down device 200 have a specific saturated value due to the log ( ⁇ / 2 ⁇ ) / ⁇ term in [Equation 2] and [Equation 3].
- the nonlinear log (x) / x function of the ⁇ terminology is that the output current (I OUT ) of the pull-up element 100 and the pull-down element 200 is the constant current (I CON ) and the exponential current (I EXP ) of It is derived from V IMH and V IML near V DD / 2 that are similar as the sum.
- I CON input voltage independent constant current
- I BTBT junction BTBT current
- the exponential current I EXP depending on the input voltage for the '0' and '2' states can be made to be the current I sub below the threshold voltage.
- Basic structural information including oxide thickness of 1 nm, high drain doping (HDD) of 1x10 20 cm -3 and low drain doping (LDD) of 2.5x10 19 cm -3 , was based on 32 nm low static power technology reported by ITRS.
- Device simulations were performed with Synopsys Sentaurus TM with BTBT model and bandgap reduction model.
- the maximum BTBT generation region moved from the LDD region below the gate to the HDD and body junction, which caused the main off current mechanism to be gate-independent I BTBT .
- Equation 6 shows that the device simulation current-voltage data and current-voltage modeling based on Equation 1 fit well.
- STI ternary inverter
- MIN MIN gate circuit and truth table to which a ternary inverter (STI) circuit is applied
- MAX gate circuit and truth table having the characteristics as described above. same.
- both devices operate as simple resistors and generate a third decimal (“1” state) through voltage distribution. To form.
- V DD (“2” state) or GND (“0” state) is transmitted.
- the current region that is not affected by the input voltage can be implemented with a junction band-to-band tunneling (BTBT) current characteristic that is not affected by the gate of the CMOS, and the current region increases exponentially with the input voltage. Utilizes the threshold current characteristics of CMOS.
- BTBT junction band-to-band tunneling
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- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Computational Mathematics (AREA)
- Mathematical Analysis (AREA)
- Mathematical Optimization (AREA)
- Pure & Applied Mathematics (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (6)
- 전원전압 (VDD와 GND) 사이에 직렬로 연결된 풀업 소자(100)와 풀다운 소자(200) 그리고 입력전압(VIN)과 출력전압(VOUT) 을 포함하되,상기 입력전압(VIN)에 의해 모두 꺼진 경우, 상기 풀업 소자(100)와 상기 풀다운 소자(200)가 모두 출력 전압(VOUT)에만 영향을 받는 단순 저항으로 동작하며 전압 분배를 통해 제 3의 진수 (“1” 상태)를 형성하고, 상기 풀업 소자(100) 또는 풀다운 소자(200)의 한쪽만 켜져 전류를 흘려주게 되면 VDD(“2”상태) 또는 GND(“0” 상태)가 출력전압(VOUT)으로 출력되는 것을 특징으로 하는 3진수 논리회로.
- 제 1항에 있어서,상기 입력전압(VIN)에 영향을 받지않고 상기 출력전압(VOUT)에만 영향을 받는 전류(ICON) 성분과 상기 입력전압(VIN)에 영향을 받고 상기 출력전압(VOUT)에 영향을 받지않는 전류(IEXT) 성분을 가지는 것을 특징으로 하는 3진수 논리회로.
- 제 2항에 있어서,상기 출력전압(VOUT)에 영향을 받는 전류(ICON)는 상기 출력전압(VOUT)이 작동전압(VDD)의 이분의 일(VOUT=VDD/2)일 때 전류 값 IC를 가지고, 상기 입력전압(VIN)에 영향을 받는 전류(IEXT)는 상기 입력전압(VIN)이 작동전압(VDD)의 이분의 일(VIN=VDD/2)일 때 전류 값 IE를 가지며 상기 입력전압(VIN)과 작동전압(VDD)이 동일(VIN=VDD)한 지점에서 최대전류(IMAX)로 지수적으로 증가하는 것을 특징으로 하는 3진수 논리회로.
- 제 2항에 있어서,상기 출력 전압에 영향을 받는 전류(ICON)는 이트 전압에 독립적인 접합 BTBT전류(IBTBT)를 통해 실현될 수 있고, 상기 입력 전압에 영향을 받는 전류(IEXT)는 문턱전압 이하의 전류(Isub)로 실현 될 수 있는 3진수 논리회로.
- 제 5항에 있어서,2진 인버터에서 단순 채널 도핑의 증가로 상기 BTBT전류(IBTBT)와 문턱전압 이하의 전류(Isub) 특성을 얻어 3진 인버터로 동작 가능한 것을 특징으로 하는 3진수 논리회로.
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JP2017553344A JP6683729B2 (ja) | 2015-07-10 | 2015-12-29 | 3進数論理回路 |
US15/563,473 US10133550B2 (en) | 2015-07-10 | 2015-12-29 | Ternary digit logic circuit |
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KR1020150098638A KR101689159B1 (ko) | 2015-07-10 | 2015-07-10 | 3진수 논리회로 |
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KR20240013012A (ko) | 2022-07-21 | 2024-01-30 | 경북대학교 산학협력단 | 공핍모드 및 다중 문턱전압을 갖는 mosfet을 사용하는 3진 논리 회로 설계 방법 및 이를 수행하기 위한 장치 및 기록 매체 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000077151A (ko) * | 1999-05-06 | 2000-12-26 | 마츠시타 덴끼 산교 가부시키가이샤 | 시모스 반도체 집적회로 |
KR20010082557A (ko) * | 1998-05-29 | 2001-08-30 | 에드거 대니 올손 | 다중값 논리 회로 체계 및 보충 대칭 논리 회로 구조 |
JP2006033060A (ja) * | 2004-07-12 | 2006-02-02 | Renesas Technology Corp | ダイナミック回路 |
JP2008187384A (ja) * | 2007-01-29 | 2008-08-14 | Toshiba Corp | 論理回路 |
US7567094B2 (en) * | 2006-06-14 | 2009-07-28 | Lightwire Inc. | Tri-stated driver for bandwidth-limited load |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3600603A (en) * | 1969-01-20 | 1971-08-17 | Kokusai Denshin Denwa Co Ltd | Ternary logic circuit |
JPS61145932A (ja) * | 1984-12-19 | 1986-07-03 | Sanyo Electric Co Ltd | 3値論理回路及び3値論理回路素子 |
JPS61198753A (ja) * | 1985-02-28 | 1986-09-03 | Toshiba Corp | 半導体集積回路 |
KR940008249Y1 (ko) | 1989-04-28 | 1994-12-05 | 금성일렉트론 주식회사 | 터어너리 인버터 회로 |
JPH0685569A (ja) * | 1992-09-01 | 1994-03-25 | Yukio Tanaka | 増幅器回路 |
DE59209683D1 (de) | 1992-09-30 | 1999-06-02 | Siemens Ag | Integrierte Schaltung zur Erzeugung eines Reset-Signals |
JP4288355B2 (ja) * | 2006-01-31 | 2009-07-01 | 国立大学法人北陸先端科学技術大学院大学 | 三値論理関数回路 |
CN103219990B (zh) * | 2013-04-02 | 2016-01-20 | 宁波大学 | 基于绝热多米诺逻辑的三值低功耗t运算电路 |
CN103560144B (zh) * | 2013-11-13 | 2016-02-17 | 北京大学 | 抑制隧穿晶体管泄漏电流的方法及相应的器件和制备方法 |
-
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- 2015-12-29 US US15/563,473 patent/US10133550B2/en active Active
- 2015-12-29 WO PCT/KR2015/014377 patent/WO2017010637A1/ko active Application Filing
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010082557A (ko) * | 1998-05-29 | 2001-08-30 | 에드거 대니 올손 | 다중값 논리 회로 체계 및 보충 대칭 논리 회로 구조 |
KR20000077151A (ko) * | 1999-05-06 | 2000-12-26 | 마츠시타 덴끼 산교 가부시키가이샤 | 시모스 반도체 집적회로 |
JP2006033060A (ja) * | 2004-07-12 | 2006-02-02 | Renesas Technology Corp | ダイナミック回路 |
US7567094B2 (en) * | 2006-06-14 | 2009-07-28 | Lightwire Inc. | Tri-stated driver for bandwidth-limited load |
JP2008187384A (ja) * | 2007-01-29 | 2008-08-14 | Toshiba Corp | 論理回路 |
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RU2810609C1 (ru) * | 2023-07-12 | 2023-12-28 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Саратовский национальный исследовательский государственный университет имени Н.Г. Чернышевского" | Последовательный делитель троичных целых чисел |
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US20180074788A1 (en) | 2018-03-15 |
KR101689159B1 (ko) | 2016-12-23 |
US10133550B2 (en) | 2018-11-20 |
JP6683729B2 (ja) | 2020-04-22 |
JP2018517331A (ja) | 2018-06-28 |
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