WO2016197429A1 - 电阻应变片及电阻应变式传感器 - Google Patents

电阻应变片及电阻应变式传感器 Download PDF

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Publication number
WO2016197429A1
WO2016197429A1 PCT/CN2015/083718 CN2015083718W WO2016197429A1 WO 2016197429 A1 WO2016197429 A1 WO 2016197429A1 CN 2015083718 W CN2015083718 W CN 2015083718W WO 2016197429 A1 WO2016197429 A1 WO 2016197429A1
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Prior art keywords
resistance strain
sensing unit
strain sensing
resistance
strain gauge
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PCT/CN2015/083718
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English (en)
French (fr)
Inventor
于喆
于玫
杨灿灿
张隼
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中国科学院深圳先进技术研究院
深圳三思创新电子科技有限公司
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Publication of WO2016197429A1 publication Critical patent/WO2016197429A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means

Definitions

  • the invention relates to the field of sensor technology, in particular to a resistance strain sensor for realizing a large-scale strain measurement range, in particular to a resistance strain gauge and a resistance strain sensor.
  • strain gauges and strain gauge sensors are commonly used to study or verify the stress and deformation of certain components such as machinery, bridges, and buildings under working conditions.
  • strain gauge sensor applications have gradually expanded to various aspects, and correspondingly, higher requirements have been put forward for variable sensing technology.
  • biomedical devices, wearable electronic devices and the like applied to the human body have higher requirements for performance indexes such as flexibility of the sensor and large-scale measurement range.
  • Strain sensors mainly include fiber strain sensors, piezoelectric material strain sensors, and resistance strain sensors.
  • the biggest problem of fiber strain sensor is that it requires a large number of equipment to assist it, the arrangement is difficult, and the cost is high, which restricts its application in miniaturization, low cost, portable equipment; Sensors are difficult to meet the requirements for sensor softness and large-scale measurement range due to the mechanical electrical properties and interface bonding of their materials.
  • the strain sensing element commonly used is a resistance strain sensor based on the resistance strain effect, that is, the member to be tested is deformed by the measured physical quantity, and the resistance strain gauge attached thereto is deformed together, and the resistance strain gauge is deformed. The deformation is then converted into a change in resistance value, so that various physical quantities such as tension, pressure, torque, displacement, acceleration, and temperature can be measured.
  • the functional layer materials of the existing resistance strain gauges mainly include metal and semiconductor, and the metal strain gauges have a wire type, a foil type, and a film type. Due to the poor flexibility of metal materials, the biggest disadvantage is that the sensitivity is low and the measurement range is small. Generally, only about a few percent of the strain value can be measured.
  • the strain value of platinum is ⁇ 8%, and the tungsten has about ⁇ 0.3%.
  • Strain range, copper-nickel Gold has a range of strain values of ⁇ 5%.
  • the main disadvantages of semiconductor strain gauges are that they are affected by temperature, the preparation process is complicated, the preparation cost is high, and the deformation amount capable of reversible expansion and contraction is only about a few percent of the strain value. Therefore, conventional metal and semiconductor materials are greatly limited in their use for strain sensors, and in particular, it is difficult to measure large-scale strains.
  • Chinese Patent Publication No. CN101598529 discloses an elastic fabric coated with conductive particles or a mixture of fibers and an elastomer matrix.
  • the strain gauge sensor has a maximum strain value of 50%.
  • it is only used to measure the in-plane unidirectional strain, and its processing technology is complicated. If it is necessary to clean and dry the elastic fabric substrate, it is necessary to cure the conductive particles or fibers to remove the water or other solvent present therein.
  • it is difficult to achieve micro- and nano-scale fine processing small, miniaturized for sensors), integration (integrated with other electronic devices and systems), and poor scalability.
  • a resistance strain sensor having a plurality of CNT films composed of the carbon nanotubes (CNT) fibers as a functional layer material having a strain value of more than 80% is disclosed.
  • CNT carbon nanotubes
  • the invention provides a resistance strain gauge and a resistance strain sensor.
  • a conductive strain film ie, a resistance strain sensing layer
  • a conductive strain film having a micrometer and a nano gap is attached to a flexible substrate to form a resistance strain gauge, and then the resistance strain gauge is attached.
  • the resistance value of the conductive film changes, thereby obtaining a physical quantity change of the member to be tested, which solves the problem that the maximum strain amount measured by the resistance strain gauge in the prior art is small. Low integration and poor scalability.
  • the resistance strain gauge of the present invention comprises a flexible substrate and a resistance strain sensing unit, wherein the resistance strain sensing unit is attached to the flexible substrate.
  • the resistance strain sensing unit further includes: a resistance strain sensing layer for changing a corresponding resistance value according to a magnitude of the generated deformation; a first electrode electrically connected to one end of the resistance strain sensing layer; and a second electrode And electrically connected to the other end of the resistance strain sensing layer.
  • the resistance strain sensor of the present invention includes a resistance strain gauge and a member to be tested, and the resistance strain gauge is attached to a surface of the member to be tested, and the member to be tested is deformed together by a physical quantity, and the measurement is performed. The amount of change in the resistance value of the resistance strain gauge during the deformation to measure the physical quantity acting on the member to be tested.
  • the invention provides a resistance strain gauge and a resistance strain sensor.
  • a conductive film ie, a resistance strain sensing layer
  • a conductive film having a micrometer and a nano gap is attached to a flexible substrate to form a resistance strain gauge, and then the resistance strain is formed.
  • the sheet adheres to the member to be tested.
  • the strain gauge will deform along with the member to be tested, that is, the conductive film will be stretched, and the resistance value of the conductive film will change.
  • the physical quantity (including tensile force, pressure, torque, displacement, acceleration, temperature, etc.) of the member to be tested can be obtained by the amount of change in the resistance value of the conductive film; since the conductive film is a stretchable gold having a micron and nano gap structure on the surface Made of film, the maximum strain can reach 200%; in addition, a plurality of strain gauges can be attached to the tested member to simultaneously monitor strain in different directions and different parts.
  • the resistance strain gauge of the invention has the advantages of simple structure, high integration degree and good expandability.
  • FIG. 1 is a plan view of a first embodiment of a resistance strain gauge according to an embodiment of the present invention
  • FIG. 2 is a top view of a second embodiment of a resistance strain gauge according to an embodiment of the present invention.
  • Figure 3 is a cross-sectional view of the resistance strain gauge shown in Figure 1 taken along the line A-A;
  • Figure 4 is a cross-sectional view of the resistance strain gauge shown in Figure 1 taken along line B-B;
  • Figure 5 is a cross-sectional view of the resistance strain gauge shown in Figure 2 taken along the line C-C;
  • Figure 6 is a cross-sectional view of the resistance strain gauge shown in Figure 2 taken along the line D-D;
  • FIG. 7 is a top view of Embodiment 3 of a resistance strain gauge according to an embodiment of the present invention.
  • FIG. 8 is a top view of a fourth embodiment of a resistance strain gauge according to an embodiment of the present invention.
  • Figure 9 is a cross-sectional view of the resistance strain gauge shown in Figure 7 taken along the line E-E;
  • Figure 10 is a cross-sectional view of the resistance strain gauge shown in Figure 8 taken along the line F-F;
  • FIG. 11 is a schematic diagram of Embodiment 1 of a resistance strain sensor according to an embodiment of the present invention. view;
  • FIG. 12 is a top view of a second embodiment of a resistance strain sensor according to an embodiment of the present invention.
  • FIG. 13 is a top plan view of Embodiment 3 of a resistance strain sensor according to an embodiment of the present invention.
  • Embodiment 4 of a resistance strain sensor according to an embodiment of the present invention.
  • Embodiment 15 is a top plan view of Embodiment 5 of a resistance strain sensor according to an embodiment of the present invention.
  • 16 is a schematic diagram of an integrated application of a resistance strain sensor and other sensors according to an embodiment of the present invention.
  • FIG. 17 is a topographical view of a resistive strain sensing layer of a resistance strain gauge before stretching according to an embodiment of the present invention
  • Figure 18 is a topographical view showing the stretching of the electrical resistance strain sensing layer of the strain gauge of Figure 17;
  • FIG. 19 is a diagram showing relationship between resistance change and strain of a resistive strain sensing layer of a strain gauge according to an embodiment of the present invention.
  • 20 is a schematic diagram of a gap distribution of a nano crack before stretching of a resistive strain sensing layer of a strain gauge according to an embodiment of the present invention
  • FIG. 21 is a schematic diagram showing a micro-nano crack gap distribution when a resistive strain sensing layer of a resistance strain gauge is stretched according to an embodiment of the present invention
  • FIG. 22 is a specific application example of a resistance strain gauge having a tiled substrate according to an embodiment of the present invention.
  • FIG. 23 is a specific application example of a resistance strain gauge having a columnar structure substrate according to an embodiment of the present invention.
  • the resistance strain gauge includes a flexible substrate 10 and a first resistance strain sensing unit 20, wherein The resistance strain sensing unit 20 further includes a resistance strain sensing layer 21, a first electrode 22, and a second electrode 23.
  • the first resistance strain sensing unit 20 is attached to the flexible substrate 10 and deformed together with the flexible substrate 10, and the resistance strain sensing layer 21 is configured to change its corresponding resistance value according to the magnitude of the deformation generated;
  • the electrode 22 is electrically connected to one end of the resistance strain sensing layer 21; the second electrode 23 is electrically connected to the other end of the resistance strain sensing layer 21.
  • the first resistive strain sensing unit 20 is a conductive film having a micron and nanogap structure and still maintaining electrical conduction under a large deformation.
  • the conductive film may be made of one of gold, platinum, copper and graphene.
  • the conductive properties of gold, platinum, copper and graphene are very good, and gold, platinum and copper have micron and nano gap structures.
  • the graphene film is a good measure of the amount of change in resistance produced by strain.
  • a first resistance strain sensing unit 20 is attached to the flexible substrate 10 to deform together with the flexible substrate 10 under the measured physical quantity.
  • the resistance strain sensing layer 21, the first electrode 22, and the second electrode 23 are made of a stretchable conductive film having a micron and nano gap structure on the surface, and in the present application, a micro-nano process (MEMS, Micro-Electro- The mechanical strain system 21, the first electrode 22 and the second electrode 23 are processed on the flexible substrate 10, and the invention is not limited thereto.
  • the first electrode 22 And the size of the second electrode 23 is 1.5 ⁇ 1.5 mm 2
  • the size of the resistance strain sensing layer 21 is 0.5 ⁇ 10 mm 2
  • the thickness of the gold film is about 50 nm
  • the gold film can be maintained at 150% one-dimensional deformation. Electrically conductive and with multiple cycles of fatigue life at maximum elongation.
  • the electrical resistance strain gauge provided by the embodiment of the invention is realized by adopting a novel micrometer and nano gap structure. When the conductive thin film is deformed together with the flexible substrate 10, the micron and nano gap structure of the conductive thin film can be well released. Local stress, which does not cause large penetration cracks inside the film, thus ensuring film continuity and electrical continuity; the resistance strain gauge and the flexible substrate 10 constitute a resistance strain gauge capable of measuring a large-scale deformation range, The strain gauge can measure strains up to 200%.
  • the resistance strain gauge further includes a protective layer 30, wherein the protective layer 30 covers the resistance strain transmission.
  • a protective layer 30 is used to protect the resistance strain sensing layer 21.
  • the resistive strain sensing layer 21 is covered with a protective layer 30, which prevents foreign matter from entering the resistance strain sensing layer 21, and also prevents foreign objects from damaging the resistance strain sensing layer 21, and prolongs The service life of the resistance strain sensing layer 21 also ensures the accuracy of the measurement.
  • the protective layer 30 has elasticity, and the material of the protective layer 30 is rubber or polydimethylsiloxane.
  • the invention is not limited thereto, as long as it can provide a protective effect and does not affect the physical measurement of the material.
  • FIG. 3 is a cross-sectional view of the resistance strain gauge shown in FIG. 1 along the AA direction, as shown in FIG. 3, the first resistance strain gauge 20 is attached to the flexible substrate 10, and the first resistance strain sensing unit 20 (in the figure) Not further indicated) further comprising a resistive strain sensing layer 21, a first electrode 22 and a second electrode 23, the flexible substrate 10 being deformed by a physical quantity, since the first resistive strain sensing unit 20 is attached to the flexible substrate 10, A resistive strain sensing unit 20 is deformed together with the flexible substrate 10.
  • FIG. 4 is a cross-sectional view of the resistance strain gauge shown in FIG. 1 taken along the line BB, as shown in FIG. 4, the first resistance strain sensing unit 20 is attached to the flexible substrate 10, as various portions have been described above, It will not be described in detail to save space.
  • FIG. 5 is a cross-sectional view of the resistance strain gauge shown in FIG. 2 in the CC direction, and FIG. 5 is different from FIG. 3 in that the resistance strain sensing layer 21 is further covered with a protective layer 30 to protect the resistance strain sensing.
  • the layer 21 also prevents foreign objects from damaging the resistance strain sensing layer 21, prolonging the service life of the resistance strain sensing layer 21, and also ensuring measurement accuracy.
  • FIG. 6 is a cross-sectional view of the resistance strain gauge shown in FIG. 2 in the DD direction. As shown in FIG. 6, the protective layer 30 also covers both side walls of the resistance strain sensing layer 21, thereby being better protected.
  • the resistance strain sensing layer 21 is not limited to the invention.
  • the resistance strain gauge further includes a bottom layer (not shown), wherein the underlayer is disposed between the flexible substrate 10 and the first resistance strain sensing unit 20
  • the underlayer is mainly used to enhance adhesion between the flexible substrate 10 and the first resistance strain sensing unit 20.
  • the underlayer is disposed between the flexible substrate 10 and the first resistance strain sensing unit 20, and the underlayer can enhance the conductive film (ie, the gold film, including: the resistance strain sensing layer 21, the first electrode 22 And the adhesion of the second electrode 23) to the flexible substrate 10,
  • the material of the underlayer may be one of titanium, chromium, and copper, and the invention is not limited thereto.
  • the underlayer effectively enhances the adhesion of the conductive film and the flexible substrate 10. When the flexible substrate 10 is deformed by the physical quantity, the conductive film is deformed together with the flexible substrate 10, further ensuring measurement accuracy.
  • the protective layer 30 can be coated on the underlayer at the same time, thereby preventing the difference
  • the object enters the gap between the bottom layer and the flexible substrate 10 and the first resistance strain sensing unit 20, thereby ensuring the adhesion between the underlayer and the flexible substrate 10 and the first resistance strain sensing unit 20.
  • the present invention does not This is limited.
  • FIG. 7 is a top view of a third embodiment of a resistance strain gauge according to an embodiment of the present invention, and FIG. 7 is different from that of FIG. 1 in that the flexible substrate 10 is a columnar structure, and the first resistance strain sensing unit 20 is attached to the The flexible substrate 10 is deformed together with the flexible substrate 10 under the measured physical quantity, and the other is exactly the same as the resistance strain gauge shown in FIG. 1, and will not be described again here to save space.
  • FIG. 8 is a top view of a fourth embodiment of a resistance strain gauge according to an embodiment of the present invention, and FIG. 8 is different from FIG. 7 in that the resistance strain gauge further includes a protective layer 30, wherein the protective layer 30 covers On the resistance strain sensing layer 21, a protective layer 30 is used to protect the resistance strain sensing layer 21.
  • FIG. 9 is a cross-sectional view of the resistance strain gauge shown in FIG. 7 in the EE direction.
  • the flexible substrate 10 has a columnar structure, and the first resistance strain sensing unit 20 is attached to the flexibility of the columnar structure.
  • the first resistance strain sensing unit 20 also exhibits a fan ring structure; in addition, the first resistance strain sensing unit 20 may also exhibit a ring structure, which is not limited thereto.
  • first resistive strain sensing unit 20 attached to the planar substrate, and a specific embodiment in which the first resistive strain sensing unit 20 is attached to the flexible substrate 10 having a columnar structure will be described later.
  • FIG. 10 is a cross-sectional view of the resistance strain gauge shown in FIG. 8 in the FF direction, and FIG. 10 is different from FIG. 8 in that the resistance strain gauge further includes a protective layer 30, wherein the protective layer 30 covers the resistor On the strain sensing layer 21, a protective layer 30 is used to protect the resistance strain sensing layer 21.
  • the protective layer 30 covers the entire columnar flexible substrate 10, and can provide a good protection.
  • the resistance strain gauge further includes a bottom layer, wherein the underlayer is disposed between the flexible substrate 10 and the first resistance strain sensing unit 20, and the bottom layer is used for reinforcement Adhesion between the flexible substrate 10 and the first electrical resistance strain sensing unit 20.
  • the resistance strain sensor includes: a strain gauge 1000 and a member to be tested 2000, wherein The resistance strain gauge 1000 is attached to the surface of the member to be tested 2000, and is deformed together with the measured physical quantity of the member to be tested 2000 by measuring the resistance value of the strain gauge 1000 during the deformation process.
  • the physical quantity acting on the member to be tested 2000 is measured.
  • the physical quantity may be tension, pressure, torque, displacement, acceleration or temperature. degree.
  • the resistance strain sensor provided by the present invention has the advantages of simple structure, reliable principle, and low cost, and can realize micrometer size and can flexibly detect an example with small space.
  • FIG. 12 is a top view of a second embodiment of a resistance strain sensor according to an embodiment of the present invention, and FIG. 12 is different from FIG. 11 in that the flexible substrate 10 is a columnar structure, and the strain gauge 1000 is adhered to the same.
  • the surface of the member to be tested 2000 is deformed together with the member to be tested 2000 by a physical quantity (including tensile force, pressure, torque, displacement, acceleration, temperature, etc.).
  • the resistance strain gauge further includes a second resistance strain sensing unit 40, and a second resistance strain sensing.
  • the unit 40 is vertically disposed with the first resistance strain sensing unit 20, and the second resistance strain sensing unit 40 is attached to the flexible substrate 10.
  • the materials of the first resistance strain sensing unit 20 and the second resistance strain sensing unit 40 are fabricated by a micro-nano processing process, and the first resistance strain sensing unit 20 and the second resistance strain sensing unit 40 are The materials used may be different.
  • the first resistance strain sensing unit 20 is made of gold
  • the second resistance strain sensing unit 40 is made of graphene, and the first resistance strain sensing unit 20 and the second resistance strain can be realized.
  • the vertical cross arrangement of the sensing unit 40 enables simultaneous detection of strains in the same part and in different directions, and the application is flexible, expandable, and more competitive in practical applications.
  • the resistance strain sensor shown in FIG. 13 is only one specific embodiment of the present invention.
  • the first resistance strain sensing unit 20 is horizontally disposed, and the second resistance strain sensing unit 40 is vertically disposed only in a relative manner.
  • the sensing unit 20 is disposed vertically, and the second resistive strain sensing unit 40 is horizontally disposed.
  • the first resistive strain sensing unit 20 and the second resistive strain sensing unit 40 can also be configured according to actual measurement requirements.
  • the first resistance strain sensing unit 20 and the second resistance strain sensing unit 40 are presented in a non-vertical layout, for example, a scissors-like layout or a parallel layout, etc., and the invention is not limited thereto.
  • an insulation layer (not shown) is disposed between the first resistance strain sensing unit 20 and the second resistance strain sensing unit 40.
  • the arrangement of the insulating layer can prevent the mutual influence between the first resistance strain sensing unit 20 and the second resistance strain sensing unit 40, so that the measurement result is more accurate.
  • the lengths of the first resistance strain sensing unit 20 and the second resistance strain sensing unit 40 are long, only the first resistance strain sensing unit 20 is measured.
  • the stress of the second resistance strain sensing unit 40 is received, since the area of the intersection portion is relatively small, the influence of the overlapping portion on the measurement result can be neglected, so that the insulating layer can be omitted to achieve This saves and prepares simple results.
  • FIG. 14 is a plan view of a fourth embodiment of a resistance strain sensor according to an embodiment of the present invention
  • FIG. 15 is a top view of a fifth embodiment of a resistance strain sensor according to an embodiment of the present invention, as shown in FIGS. 14 and 15
  • the resistance strain gauge further includes a third resistance strain sensing unit 50, and/or a fourth resistance strain sensing unit 60, and/or a fifth resistance strain sensing unit 70, and/or a sixth resistance strain transmission.
  • Sense unit 80 and/or seventh resistance strain sensing unit 90 wherein the third resistance strain sensing unit 50 is arranged side by side in parallel with the first resistance strain sensing unit 20; the fourth resistance strain sensing unit 60 and the The first resistance strain sensing unit 20 is arranged at a first angle ⁇ ; the fifth resistance strain sensing unit 70 and the first resistance strain sensing unit 20 are arranged at a second angle ⁇ ; the sixth resistance strain The sensing unit 80 and the first resistance strain sensing unit 20 form a third angle ⁇ layout; the seventh resistance strain sensing unit 90 and the first resistance strain sensing unit 20 form a fourth angle ⁇ Layout; wherein the third resistor The variable sensing unit 50, and/or the fourth resistive strain sensing unit 60, and/or the fifth resistive strain sensing unit 70, and/or the sixth resistive strain sensing unit 80, and/or Or the seventh resistance strain sensing unit 90 is attached to the flexible substrate 10.
  • the above-mentioned resistance strain sensing unit is made by a micro-nano processing technology, and the materials
  • the first resistance strain sensing unit 20 and the third resistance strain sensing unit 50 are disposed in parallel, a fourth resistance strain sensing unit 60, and/or a fifth resistance strain sensing unit 70, and/or a sixth
  • the resistance strain sensing unit 80 and/or the seventh resistance strain sensing unit 90 are disposed around the first resistance strain sensing unit 20 and the third resistance strain sensing unit 50, and can simultaneously detect different parts and strains in different directions.
  • the utility model has the advantages of wide application, flexible application and strong expandability.
  • only the fifth resistance strain sensing unit 70, the sixth resistance strain sensing unit 80 and the seventh resistance strain sensing unit 90 may be included therein.
  • One or more of the present inventions are not limited thereto.
  • the present invention does not specifically define the magnitude relationship between the first angle ⁇ , and/or the second angle ⁇ , and/or the third angle ⁇ and/or the fourth angle ⁇
  • the fourth resistance strain sensing unit 60, and/or the fifth resistance strain sensing unit 70, and/or the sixth resistance strain sensing unit 80 and/or the seventh resistance strain sensing unit 90 surround a layout of the first resistance strain sensing unit 20 and the third resistance strain sensing unit 50, the first angle ⁇ , and/or the second angle ⁇ , and/or the third angle ⁇ And/or the fourth angle ⁇ is an angle facing the first resistance strain sensing unit 20 and the third resistance strain sensing unit 50, for example, in an embodiment of the invention, the An angle ⁇ , the second angle ⁇ , the third angle ⁇ , and the fourth angle ⁇ are different from each other; in another embodiment of the present invention, the first angle ⁇ , the second The angle ⁇ , the third angle ⁇ , and the fourth angle ⁇ are the same in magnitude.
  • the first angle ⁇ , the second angle ⁇ , the third angle ⁇ , and the fourth angle ⁇ are both 45 degrees, or the first angle ⁇ and the fourth angle ⁇ are 45 degrees, the second angle ⁇ and the third angle ⁇ are 60 degrees.
  • the present invention does not limit the number of the resistance strain sensing units. The number of the resistance strain sensing units may be appropriately increased or decreased on the premise that the object of the invention is satisfied.
  • the third resistance strain sensing unit 50 may not be provided.
  • the sensing unit 90 surrounds the layout of the first resistance strain sensing unit 20 (as shown in FIG. 14), and may further be provided with two resistance strain gauges, respectively, with the first resistance strain sensing unit 20 and the third resistance strain.
  • the sensing unit 50 is vertically disposed, and the invention is not limited thereto.
  • the first resistance strain sensing unit 20 overlaps with other resistance strain sensing units (as shown in FIG. 15), then the first resistance strain sensing unit 20 And/or the fourth resistance strain sensing unit 60, and/or the fifth resistance strain sensing unit 70, and/or the sixth resistance strain sensing unit 80, and/or the seventh An insulating layer is disposed between the resistance strain sensing units 90.
  • FIG. 16 is a schematic diagram of an integrated application of a resistance strain sensor and other sensors according to an embodiment of the present invention.
  • the resistance strain sensing layer material of the resistance strain gauge is fabricated by using a micro-nano processing technology (MEMS). Therefore, the size can be flexibly designed and processed, the nanometer-sized structure can be realized at a minimum, and it is easy to integrate with other sensors, electronic devices and systems.
  • MEMS micro-nano processing technology
  • the shape, size, number and arrangement of the resistance strain gauges can be adjusted according to practical application requirements.
  • FIG. 17 is a topographical view of a resistive strain sensing layer of a resistive strain gauge according to an embodiment of the present invention
  • FIG. 18 is a resistive strain sensing layer of a resistive strain gauge of FIG. a surface topography diagram in stretching
  • the first electrode 22, the second electrode 23, and the resistance strain sensing layer are made of a stretchable gold film having a micron and nano gap structure on the surface,
  • the bottom layer is titanium.
  • the gold film can be seen from the figure.
  • the micro- and nano-gap structure of the surface which can release local stress well when the film is stretched.
  • Figure 17 shows the original nano-gap structure of the conductive film. From Figure 17, the nano-gap is in an arbitrary distribution state. When the conductive film is subjected to stress stretching, the part The nano-gap will expand and merge into a micron-gap with a width of micron (as shown in Figure 18) to release the local stress generated during stretching without creating large penetration cracks inside the film. The stretchability is ensured without causing large penetration cracks inside the film, thereby ensuring its stretchability.
  • FIG. 19 is a diagram showing relationship between resistance change and strain of a resistive strain sensing layer of a strain gauge according to an embodiment of the present invention.
  • the sizes of the first electrode 22 and the second electrode 23 of the resistive strain sensing unit are both 1.5 ⁇ . 1.5mm 2
  • the size of the resistance strain sensing layer is 0.5 ⁇ 10mm 2
  • the thickness of the gold film is about 50nm.
  • the film can maintain electrical conduction under 150% one-dimensional deformation and has more at maximum stretching rate. The fatigue life of the secondary cycle. As shown in FIG.
  • the initial value of the resistance R 0 and the linear coefficient a are determined by the size and structure of the resistive strain sensing layer, but the resistance values vary similarly with strain. It can be seen from FIG. 19 that the resistance strain gauge has the characteristics of high response speed, high sensitivity, and good linearity. The maximum deformation range that the strain gage can achieve under the condition of maintaining electrical conduction can be adjusted by changing the size of the resistance strain sensing layer.
  • FIG. 20 is a schematic diagram showing the distribution of the nano crack gap before the tensile strain of the resistance strain sensing layer of the electrical resistance strain gauge according to the embodiment of the present invention
  • FIG. 21 is a schematic diagram of the resistance strain sensing layer of the electrical resistance strain gauge according to the embodiment of the present invention
  • Schematic diagram of the micro-nano crack gap distribution during stretching as shown in FIG. 20 and FIG. 21,
  • FIG. 20 is a schematic diagram of a plurality of nano-crack gap structures on the surface of the conductive film before stretching
  • FIG. 21 is when the conductive film is subjected to stress stretching. Part of the nano-gap is partially merged into a micro-gap to release the local stress generated in the stretching without causing large penetration cracks inside the film, which ensures the stretchability of the resistance strain sensing layer.
  • FIG. 22 is a specific application example of a resistance strain gauge having a tile-shaped substrate according to an embodiment of the present invention
  • FIG. 23 is a specific application example of a resistance strain gauge having a columnar structure substrate according to an embodiment of the present invention
  • two kinds of structural diagrams of the resistance strain gauge are given, that is, a tiled structure and a columnar structure, and two different structures can be reasonably used according to practical applications.
  • Figures 22 and 23 show two specific operational examples of two strain gauges in the biomedical field.
  • Figure 22 The resistance strain gauge for the flat structure is attached to the knee joint of the knee joint damaged patient or the hemiplegia patient in the form of a knee guard.
  • Figure 23 is a columnar structure of the electrical resistance strain gauge in the form of a bracelet attached to the patient's wrist for pulse testing, this wear method is more easy to operate than the flat-state resistive strain sensor, without the use of adhesives, The advantage of higher gas permeability and more beautiful appearance.
  • the invention provides a resistance strain gauge and a resistance strain sensor.
  • a conductive film ie, a resistance strain sensing layer
  • a conductive film having a micrometer and a nano gap is attached to a flexible substrate to form a resistance strain gauge, and then the resistance strain is formed.
  • the sheet adheres to the member to be tested.
  • the strain gauge will deform along with the member to be tested, that is, the conductive film will be stretched, and the resistance value of the conductive film will change.
  • the physical quantity (including tensile force, pressure, torque, displacement, acceleration, temperature, etc.) of the member to be tested can be obtained by the amount of change in the resistance value of the conductive film; since the conductive film is stretchable conductive having a micron and nano gap structure on the surface
  • the film is made up to a maximum strain of 200%; in addition, a plurality of strain gauges can be adhered to the member to be tested, and strains in different directions and different parts can be simultaneously monitored.
  • the strain gauge of the present invention has a simple structure and low cost. , high integration, good scalability and so on.
  • the invention proposes a new resistance strain gauge which can be deformed in a large scale.
  • the conductive film of the strain gauge is realized by a novel micron and nano gap structure; when the conductive film is deformed together with the flexible substrate, the micron of the conductive film
  • the nano-gap structure can release local stress well without causing large penetration cracks inside the film, thus ensuring its stretchability.
  • the invention attaches a resistance strain gauge to the member to be tested, and constitutes a resistance strain sensor capable of measuring a large-scale deformation range, and the resistance strain sensor can measure a strain of at most 200%.
  • the conductive film of the resistance strain gauge of the invention is made by micro-nano processing technology, and the resistance strain gauge can be processed into micrometer or nanometer size, which can realize integration of multiple resistance strain gauges, can simultaneously detect strains of different parts and different directions, and can Integrate with other sensors, electronics and systems.
  • the resistance strain gauge and the resistance strain sensor of the invention have fatigue life of multiple cycles, and the conductive film material can be processed on different elastic base materials such as silica gel, fabric, etc., which are less restricted by the substrate (backing material), and the functional layer is
  • the base material together has a very high flexibility, can be bent and deformed, can meet the complex body surface morphology and dynamic deformation requirements of the organism, can measure the deformation of the tissue, can be applied in fields such as biomedicine, has wide application, and is more practical in practical applications. Competitive.
  • the resistance strain gauge and the resistance strain sensor of the invention are simple in preparation, reliable in principle, low in cost, and the prepared resistance strain sensor is transparent, and the materials used have absolute safety and environmental friendliness to the human body.
  • the resistance strain gauge is prepared by micro-nano processing technology, and can be expanded into multiple channels, which can realize integration of multiple sensing units, and can simultaneously monitor strains in different directions and different parts.
  • the resistance strain gauge is small in size, light in weight, simple in structure, convenient in use, fast in response, and has little influence on the working state and stress distribution of the device under test, and can be used for both static measurement and dynamic measurement.
  • the resistance strain sensor of the invention has high sensitivity, short response time and long fatigue life.

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  • General Physics & Mathematics (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

一种电阻应变片（1000）及电阻应变式传感器，其中，电阻应变片（1000）包括：柔性基底（10）；电阻应变传感单元（20），附着于所述柔性基底（10）上；所述电阻应变传感单元（20）两端设有引出电极（22, 23），所述电阻应变式传感器包括：电阻应变片（1000）和被测构件（2000），电阻应变片（1000）与所述被测构件（2000）在物理量的作用下一起产生形变，通过测量形变过程中所述电阻应变片的电阻值变化量来测量作用于所述被测构件（2000）上的所述物理量的大小，可以测量最大200%的应变、及其对应的物理量，而且集成度高、可拓展性好、易于实现。

Description

电阻应变片及电阻应变式传感器
优先权声明
本申请要求2015年6月9日递交的、申请号为CN201510312473.X、发明名称为“电阻应变片及电阻应变式传感器”的中国发明专利的优先权，该发明专利的所有内容在此全部引入。
技术领域
本发明涉及传感器技术领域，尤其涉及一种实现大尺度应变测量范围的电阻应变式传感器，具体来说就是一种电阻应变片及电阻应变式传感器。
背景技术
传统应变片和应变式传感器通常用来研究或验证机械、桥梁、建筑等某些构件在工作状态下的应力、变形情况。随着电子、信息技术的发展，应变式传感器应用已逐渐拓展到方方面面，相应的也对应变式传感技术提出了更高的要求。特别是应用于人体的生物医疗器械、可穿戴式电子等装置，对于传感器的柔软性和大尺度测量范围等性能指标提出了更高的要求。应变传感器主要包括光纤应变式传感器、压电材料应变式传感器、电阻应变式传感器等几种类型。
其中，光纤应变式传感器的最大问题在于其需要大量设备与之相辅助，布置较困难，且成本很高，制约了其在小型化、低成本、便携式设备中的应用；而压电材料应变式传感器由于受到其材料的机械电学性能和界面粘结等方面的制约，很难满足对于传感器柔软性和大尺度测量范围的需求。
目前较常采用的应变式传感元件是电阻应变式传感器，基于电阻应变效应，即被测构件受到所测量的物理量作用而产生变形，并使附着其上的电阻应变片一起变形，电阻应变片再将变形转换为电阻值的变化，从而可以测量拉力、压力、扭矩、位移、加速度和温度等多种物理量。现有的电阻应变片的功能层材料主要有金属和半导体两类，金属应变片有金属丝式、箔式、薄膜式之分。由于金属材料柔软性较差，其最大缺点是灵敏度低、测量范围小，通常只能测量约百分之几的应变值，例如，铂的应变值为±8％，钨具有约±0.3％的应变范围，铜镍合 金具有±5％的应变值范围。半导体应变计最主要的缺点是受温度影响大，制备工艺复杂，制备成本高，且其能够可逆伸缩的变形量也只有约百分之几的应变值。因此，传统的金属和半导体材料在用于应变传感器的用途上时受到很大限制，特别是很难实现大尺度应变的测量。
为了实现柔软性和大尺度应变测量，人们试图采用新兴材料作为电阻应变片的功能层，例如中国专利公开号CN101598529公布了一种涂敷有导电颗粒或纤维与弹性体基体的混合物的弹性织物制作的应变式传感器，其有50％的最大应变值。但其仅用于测量面内单方向应变，且其加工工艺较复杂，如需清洁、干燥弹性织物基底，需固化导电颗粒或纤维以除去其中存在的水或其它溶剂等处理工艺。特别是很难实现微米、纳米尺度的精细加工(针对传感器的小型、微型化)，可集成性(与其他电子器件和***集成)和可拓展性较差。
又如中国专利公开号CN104142118公开了一种以多条所述碳纳米管(CNT)纤维构成的CNT膜作为功能层材料的电阻应变传感器，其具有大于80％的应变值。但当在沿非CNT纤维的取向方向进行形变时，传感器所测得的电阻变化的线性度不高。同样的，也很难实现微米、纳米尺度的精细加工(传感器的小型、微型化)，可集成性(与其他电子器件和***集成)和可拓展性较差。
为此，本领域亟需开发一种能够进行微米、纳米尺度的精细加工，且可集成性和拓展性好的电阻应变式传感器。
发明内容
本发明提供一种电阻应变片及电阻应变式传感器，通过在柔性基底贴附一层具有微米和纳米间隙的导电薄膜(即电阻应变传感层)，形成电阻应变片，再将电阻应变片附着在被测构件上，当被测构件发生物理形变时，导电薄膜的电阻值会改变，从而获得被测构件的物理量变化，解决了现有技术中电阻应变片所测量时的最大应变量小，集成度低、拓展性差的问题。
本发明的电阻应变片，包括柔性基底和电阻应变传感单元，其中，电阻应变传感单元附着于所述柔性基底上。所述电阻应变传感单元进一步包括：电阻应变传感层，用于根据产生形变的大小改变其对应的电阻值；第一电极，与所述电阻应变传感层的一端电连接；第二电极，与所述电阻应变传感层的另一端电连接。
本发明的电阻应变式传感器，包括电阻应变片和被测构件，将所述电阻应变片贴附在所述被测构件表面，与所述被测构件在物理量的作用下一起产生形变，通过测量形变过程中所述电阻应变片的电阻值变化量来测量作用于所述被测构件上的物理量。
本发明提供一种电阻应变片及电阻应变式传感器，通过在柔性基底贴附一层具有微米和纳米间隙的导电薄膜(亦即电阻应变传感层)，从而形成电阻应变片，再将电阻应变片粘附在被测构件上，当被测构件发生物理形变时，电阻应变片会随着被测构件一起发生形变，即导电薄膜会被拉伸，此时导电薄膜的电阻值会发生改变，通过导电薄膜的电阻值改变量，可以获得被测构件的物理量(包括拉力、压力、扭矩、位移、加速度或者温度等)变化；由于导电薄膜是由表面具有微米和纳米间隙结构的可拉伸金膜制成，最大应变量可达200％；此外可以在被测构件上贴附多个电阻应变片，可同时监测不同方向和不同部位的应变。此外，本发明的电阻应变片结构简单，具有集成度高、可拓展性好等优点。
应了解的是，上述一般描述及以下具体实施方式仅为示例性及阐释性的，其并不能限制本发明所欲主张的范围。
附图说明
下面的所附附图是本发明的说明书的一部分，其绘示了本发明的示例实施例，所附附图与说明书的描述一起用来说明本发明的原理。
图1为本发明实施例提供的一种电阻应变片的实施方式一的俯视图；
图2为本发明实施例提供的一种电阻应变片的实施方式二的俯视图；
图3为图1中所示的电阻应变片沿A-A方向的剖视图；
图4为图1中所示的电阻应变片沿B-B方向的剖视图；
图5为图2中所示的电阻应变片沿C-C方向的剖视图；
图6为图2中所示的电阻应变片沿D-D方向的剖视图；
图7为本发明实施例提供的一种电阻应变片的实施方式三的俯视图；
图8为本发明实施例提供的一种电阻应变片的实施方式四的俯视图；
图9为图7中所示的电阻应变片沿E-E方向的剖视图；
图10为图8中所示的电阻应变片沿F-F方向的剖视图；
图11为本发明实施例提供的一种电阻应变式传感器的实施方式一的俯 视图；
图12为本发明实施例提供的一种电阻应变式传感器的实施方式二的俯视图；
图13为本发明实施例提供的一种电阻应变式传感器的实施方式三的俯视图；
图14为本发明实施例提供的一种电阻应变式传感器的实施方式四的俯视图；
图15为本发明实施例提供的一种电阻应变式传感器的实施方式五的俯视图；
图16为本发明实施例提供的一种电阻应变式传感器与其它传感器集成应用示意图；
图17为本发明实施例提供的一种电阻应变片的电阻应变传感层的拉伸前的表面形貌图；
图18为图17所示的一种电阻应变片的电阻应变传感层的拉伸中的表面形貌图；
图19为本发明实施例提供的一种电阻应变片的电阻应变传感层的电阻变化和应变的关系图；
图20为本发明实施例提供的一种电阻应变片的电阻应变传感层拉伸前纳米裂纹间隙分布示意图；
图21为本发明实施例提供的一种电阻应变片的电阻应变传感层拉伸时微米-纳米裂纹间隙分布示意图；
图22为本发明实施例提供的一种具备平铺状基底的电阻应变片的具体应用实施例；
图23为本发明实施例提供的一种具备柱状结构基底的电阻应变片的具体应用实施例。
附图符号说明：
10  柔性基底        20  第一电阻应变传感单元
21  电阻应变传感层  22  第一电极
23  第二电极
30   保护层
40   第二电阻应变传感单元  50   第三电阻应变传感单元
60   第四电阻应变传感单元  70   第五电阻应变传感单元
80   第六电阻应变传感单元  90   第七电阻应变传感单元
α   第一角度              β   第二角度
γ   第三角度              δ   第四角度
1000 电阻应变片            2000 被测构件
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚明白，下面将以附图及详细叙述清楚说明本发明所揭示内容的精神，任何所属技术领域技术人员在了解本发明内容的实施例后，当可由本发明内容所教示的技术，加以改变及修饰，其并不脱离本发明内容的精神与范围。
本发明的示意性实施例及其说明用于解释本发明，但并不作为对本发明的限定。另外，在附图及实施方式中所使用相同或类似标号的元件/构件是用来代表相同或类似部分。
关于本文中所使用的“第一”、“第二”、…等，并非特别指称次序或顺位的意思，也非用以限定本发明，其仅为了区别以相同技术用语描述的元件或操作。
关于本文中所使用的方向用语，例如：上、下、左、右、前或后等，仅是参考附图的方向。因此，使用的方向用语是用来说明并非用来限制本创作。
关于本文中所使用的“包含”、“包括”、“具有”、“含有”等等，均为开放性的用语，即意指包含但不限于。
关于本文中所使用的“及/或”、“和/或”，包括所述事物的任一或全部组合。
关于本文中所使用的用语“大致”、“约”等，用以修饰任何可以微变化的数量或误差，但这些微变化或误差并不会改变其本质。一般而言，此类用语所修饰的微变化或误差的范围在部分实施例中可为20％，在部分实施例中可为10％，在部分实施例中可为5％或是其他数值。本领域技术人员应当了解，前述提及的数值可依实际需求而调整，并不以此为限。
某些用以描述本申请的用词将于下或在此说明书的别处讨论，以提供本领域技术人员在有关本申请的描述上额外的引导。
图1为本发明实施例提供的一种电阻应变片的实施方式一的俯视图，如图1所示，所述电阻应变片包括柔性基底10和第一电阻应变传感单元20，其中，第一电阻应变传感单元20进一步包括电阻应变传感层21、第一电极22和第二电极23。第一电阻应变传感单元20附着于所述柔性基底10上，并与所述柔性基底10一起发生形变，电阻应变传感层21用于根据产生形变的大小改变其对应的电阻值；第一电极22与所述电阻应变传感层21的一端电连接；第二电极23与所述电阻应变传感层21的另一端电连接。本发明的其它具体实施例中，所述第一电阻应变传感单元20为具有微米和纳米间隙结构、且在较大形变下依旧保持电导通的导电薄膜。其中所述导电薄膜的材质可以为金、铂、铜、石墨烯中的一种，金、铂、铜、石墨烯的导电性能都很好，具有微米和纳米间隙结构的金、铂、铜、石墨烯薄膜可以很好地测量应变产生的电阻变化量。
参照图1，第一电阻应变传感单元20附着于所述柔性基底10上，在所测物理量作用下与所述柔性基底10一起产生形变。电阻应变传感层21、第一电极22和第二电极23由表面具有微米和纳米间隙结构的可拉伸导电薄膜制成，在本申请中，采用微纳加工工艺(MEMS，Micro-Electro-Mechanical System)将电阻应变传感层21、第一电极22和第二电极23加工于所述柔性基底10上，本发明不以此为限，本发明的一具体实施例中，第一电极22和第二电极23的尺寸为1.5×1.5mm2，电阻应变传感层21的尺寸为0.5×10mm2，金薄膜的厚度约为50nm，该金薄膜可在150％的一维形变下依旧保持电导通，且在最大拉伸率下具有多次循环的疲劳寿命。本发明实施例提供的一种电阻应变片，通过采用新颖的微米和纳米间隙结构来实现，当导电薄膜随着柔性基底10一起发生形变时，导电薄膜的微米和纳米间隙结构能很好地释放局部应力，而不至于在薄膜内部产生大的贯穿性裂纹，从而保证了其薄膜连续性和电导通性；由电阻应变片和柔性基底10构成一种可测量大尺度形变范围的电阻应变片，该电阻应变片可以测量最大200％的应变。
图2为本发明实施例提供的一种电阻应变片的实施方式二的俯视图，如图2所示，所述电阻应变片还包括保护层30，其中，保护层30覆盖于所述电阻应变传感层21上，保护层30用于保护所述电阻应变传感层21。
参照图2，所述电阻应变传感层21上覆盖有保护层30，可以防止异物进入所述电阻应变传感层21，同时也防止外物损坏所述电阻应变传感层21，延长 了电阻应变传感层21的使用寿命，同时也保证了测量的准确性。
本发明的一具体实施例中，所述保护层30具有弹性，所述保护层30的材料为橡胶或者为聚二甲基硅氧烷。本发明不以此为限，只要能够起到保护作用，且不影响物理量正常测量的材料均可。
图3为图1中所示的电阻应变片沿A-A方向的剖视图，如图3所示，第一电阻应变片20附着于所述柔性基底10上，第一电阻应变传感单元20(图中未标示)进一步包括电阻应变传感层21、第一电极22和第二电极23，在物理量的作用下柔性基底10产生形变，由于第一电阻应变传感单元20附着于柔性基底10上，第一电阻应变传感单元20与柔性基底10一起发生形变。
图4为图1中所示的电阻应变片沿B-B方向的剖视图，如图4所示，第一电阻应变传感单元20附着于所述柔性基底10上，由于各个部分上文已经描述，此处不再具体描述，以节省篇幅。
图5为图2中所示的电阻应变片沿C-C方向的剖视图，图5与图3的不同在于，所述电阻应变传感层21上还覆盖有保护层30，保护所述电阻应变传感层21，同时也防止外物损坏所述电阻应变传感层21，延长了电阻应变传感层21的使用寿命，同时也保证了测量的准确性。
图6为图2中所示的电阻应变片沿D-D方向的剖视图，如图6所示，保护层30也包覆了所述电阻应变传感层21的两边侧壁，从而能够更好地保护所述电阻应变传感层21，本发明不以此为限。
本发明的一具体实施例中，所述电阻应变片还包括一打底层(图中未标示)，其中，打底层设置于所述柔性基底10和所述第一电阻应变传感单元20之间，打底层主要用于增强所述柔性基底10与所述第一电阻应变传感单元20之间的粘附性。
所述打底层设置于所述柔性基底10和所述第一电阻应变传感单元20之间，所述打底层可以增强导电薄膜(即金薄膜，包括：电阻应变传感层21、第一电极22和第二电极23)和柔性基底10的粘附性，打底层的材质可为钛、铬、铜中的一种，本发明不以此为限。打底层有效增强了导电薄膜和柔性基底10的粘附性，在柔性基底10在物理量的作用下产生形变时，导电薄膜与柔性基底10一起发生形变，进一步保证了测量的精准性。
本发明的一具体实施例中，保护层30可以同时包覆打底层，从而防止异 物进入打底层与柔性基底10、第一电阻应变传感单元20之间的间隙，从而保证打底层与柔性基底10、第一电阻应变传感单元20之间的粘附性，本发明不以此为限。
图7为本发明实施例提供的一种电阻应变片的实施方式三的俯视图，图7与图1的不同在于，所述柔性基底10为柱状结构，第一电阻应变传感单元20附着于所述柔性基底10上，在所测物理量作用下与所述柔性基底10一起产生形变，其它与图1所示的电阻应变片完全相同，此处不再赘述，以节省篇幅。
图8为本发明实施例提供的一种电阻应变片的实施方式四的俯视图，图8与图7的不同之处在于，所述电阻应变片还包括保护层30，其中，保护层30覆盖于所述电阻应变传感层21上，保护层30用于保护所述电阻应变传感层21。
图9为图7中所示的电阻应变片沿E-E方向的剖视图，如图9所示，所述柔性基底10呈柱状结构，所述第一电阻应变传感单元20附着于呈柱状结构的柔性基底10上，第一电阻应变传感单元20也呈现出扇环结构；此外，第一电阻应变传感单元20也可以呈现出圆环结构，本发明不以此为限。
第一电阻应变传感单元20附着于平面状基底上的具体应用实施，以及第一电阻应变传感单元20附着于呈柱状结构的柔性基底10上的具体实施例，后文会作具体说明。
图10为图8中所示的电阻应变片沿F-F方向的剖视图，图10与图8的不同之处在于，所述电阻应变片还包括保护层30，其中，保护层30覆盖于所述电阻应变传感层21上，保护层30用于保护所述电阻应变传感层21。图10中，保护层30覆盖整个柱状柔性基底10，能够起到很好的防护作用。
本发明的一具体实施例中，所述电阻应变片还包括一打底层，其中，打底层设置于所述柔性基底10和所述第一电阻应变传感单元20之间，打底层用于增强所述柔性基底10与所述第一电阻应变传感单元20之间的粘附性。
图11为本发明实施例提供的一种电阻应变式传感器的实施方式一的俯视图，如图11所示，所述电阻应变式传感器包括：电阻应变片1000和被测构件2000，其中，将所述电阻应变片1000贴附在所述被测构件2000表面，与所述被测构件2000在所测物理量的作用下一起产生形变，通过测量形变过程中所述电阻应变片1000的电阻值变化来测量作用于所述被测构件2000上的物理量。本发明的具体实施例中，所述物理量可以为拉力、压力、扭矩、位移、加速度或者温 度。
参照图11，本发明提供的电阻应变式传感器具有结构简单、原理可靠、成本低的优点，可实现微米尺寸，可灵活地检测空间狭小的实例中。
图12为本发明实施例提供的一种电阻应变式传感器的实施方式二的俯视图，图12与图11的不同之处在于，所述柔性基底10为柱状结构，电阻应变片1000粘附于所述被测构件2000表面，在物理量(包括拉力、压力、扭矩、位移、加速度或者温度等)作用下与被测构件2000一起产生形变。
图13为本发明实施例提供的一种电阻应变式传感器的实施方式三的俯视图，如图13所示，所述电阻应变片还包括第二电阻应变传感单元40，第二电阻应变传感单元40与所述第一电阻应变传感单元20垂直交叉布局，第二电阻应变传感单元40附着于所述柔性基底10上。
参照图13，第一电阻应变传感单元20和第二电阻应变传感单元40的材料采用微纳加工工艺制作而成，第一电阻应变传感单元20和第二电阻应变传感单元40所使用的材质可以不同，例如，第一电阻应变传感单元20由金制成，第二电阻应变传感单元40由石墨烯制成，可以实现第一电阻应变传感单元20和第二电阻应变传感单元40的垂直交叉布置，从而可以实现相同部位、不同方向应变的同时检测，应用灵活，可拓展性强，在实际应用中更具有竞争力。图13所示的电阻应变式传感器只是本发明的一个具体实施例，第一电阻应变传感单元20水平设置，第二电阻应变传感单元40垂直设置只是相对而言，也可以第一电阻应变传感单元20垂直设置，第二电阻应变传感单元40水平设置，在其它具体实施例中，第一电阻应变传感单元20和第二电阻应变传感单元40还可以根据实际测量的需要，让第一电阻应变传感单元20和第二电阻应变传感单元40呈现非垂直布局，例如，剪刀状布局或者平行布局等等，本发明不以此为限。
再次参照图13，所述第一电阻应变传感单元20和所述第二电阻应变传感单元40之间具有一绝缘层(图中未标示)。绝缘层的设置可以防止所述第一电阻应变传感单元20和所述第二电阻应变传感单元40之间的相互影响，使得测量结果更加精准。当然，在本发明的特定实施例中，当所述第一电阻应变传感单元20和所述第二电阻应变传感单元40的长度很长，仅测量所述第一电阻应变传感单元20或所述第二电阻应变传感单元40所受的应力时，由于交叉部分面积相对较小，可以忽略重叠部分对测量结果的影响，因此可以不设置绝缘层，以达成成 本节省和制备简单的效果。
图14为本发明实施例提供的一种电阻应变式传感器的实施方式四的俯视图，图15为本发明实施例提供的一种电阻应变式传感器的实施方式五的俯视图，如图14和15所示，所述电阻应变片还包括第三电阻应变传感单元50、和/或第四电阻应变传感单元60、和/或第五电阻应变传感单元70、和/或第六电阻应变传感单元80和/或第七电阻应变传感单元90，其中，第三电阻应变传感单元50与所述第一电阻应变传感单元20平行并排布局；第四电阻应变传感单元60与所述第一电阻应变传感单元20之间成第一角度α布局；第五电阻应变传感单元70与所述第一电阻应变传感单元20之间成第二角度β布局；第六电阻应变传感单元80与所述第一电阻应变传感单元20之间成第三角度γ布局；第七电阻应变传感单元90与所述第一电阻应变传感单元20之间成第四角度δ布局；其中，所述第三电阻应变传感单元50、和/或所述第四电阻应变传感单元60、和/或所述第五电阻应变传感单元70、和/或所述第六电阻应变传感单元80、和/或所述第七电阻应变传感单元90都附着于所述柔性基底10上。以上所述电阻应变传感单元由微纳加工工艺制作而成，所使用的材质可以相同、也可以不同，本发明不以此为限。
参照图15，第一电阻应变传感单元20和第三电阻应变传感单元50并行设置，第四电阻应变传感单元60、和/或第五电阻应变传感单元70、和/或第六电阻应变传感单元80和/或第七电阻应变传感单元90围绕着第一电阻应变传感单元20和第三电阻应变传感单元50设置，可以实现不同部位和不同方向应变的同时检测，应用范围广阔、应用灵活、可拓展性强，本发明的具体实施例中，可以仅有第五电阻应变传感单元70、第六电阻应变传感单元80和第七电阻应变传感单元90其中的一个或多个，本发明不以此为限。
本发明并不对所述第一角度α、和/或所述第二角度β、和/或所述第三角度γ和/或所述第四角度δ之间的大小关系作具体限定，所述第四电阻应变传感单元60、和/或所述第五电阻应变传感单元70、和/或所述第六电阻应变传感单元80和/或所述第七电阻应变传感单元90围绕所述第一电阻应变传感单元20和所述第三电阻应变传感单元50的布局，所述第一角度α、和/或所述第二角度β、和/或所述第三角度γ和/或所述第四角度δ为面向所述第一电阻应变传感单元20和所述第三电阻应变传感单元50的角度，例如本发明一具体实施例中，所述第 一角度α、所述第二角度β、所述第三角度γ和所述第四角度δ的大小互不相同；本发明另一具体实施例中，所述第一角度α、所述第二角度β、所述第三角度γ和所述第四角度δ的大小相同。例如，所述第一角度α、所述第二角度β、所述第三角度γ和所述第四角度δ均为45度，或者，所述第一角度α和所述第四角度δ为45度，所述第二角度β和所述第三角度γ为60度。另外，本发明也不对电阻应变传感单元的数量进行限定，在满足发明目的的前提下，可以适当增加或减少电阻应变传感单元的数量，例如，可以不设置第三电阻应变传感单元50，即仅所述第四电阻应变传感单元60、和/或所述第五电阻应变传感单元70、和/或所述第六电阻应变传感单元80和/或所述第七电阻应变传感单元90围绕所述第一电阻应变传感单元20的布局(如图14所示)，还可以再设置两个电阻应变片，分别与第一电阻应变传感单元20和第三电阻应变传感单元50交叉垂直设置，本发明不以此为限。
本发明的一具体实施例中，如果所述第一电阻应变传感单元20与其它电阻应变传感单元存在重叠交叉(如图15所示)，那么，所述第一电阻应变传感单元20、和/或所述第四电阻应变传感单元60、和/或所述第五电阻应变传感单元70、和/或所述第六电阻应变传感单元80、和/或所述第七电阻应变传感单元90之间设有绝缘层。
图16为本发明实施例提供的一种电阻应变式传感器与其它传感器集成应用示意图，如图16所示，电阻应变片的电阻应变传感层材料采用微纳加工工艺(MEMS)制作而成，因此尺寸可以灵活设计和加工，最小可以实现纳米尺寸的结构，而且易于与其他传感器、电子器件和***集成，电阻应变片的形状、尺寸、数量和排列方式可以根据实际应用要求进行调整。
图17为本发明实施例提供的一种电阻应变片的电阻应变传感层的拉伸前的表面形貌图；图18为图17所示的一种电阻应变片的电阻应变传感层的拉伸中的表面形貌图；如图17～图18所示，第一电极22、第二电极23和电阻应变传感层由表面具有微米和纳米间隙结构的可拉伸金薄膜制成，打底层为钛，图17-图18分别为金薄膜在拉伸前、拉伸中(ε＝100％)和拉伸还原后的扫描电子显微镜图(SEM)，从图中可看出金薄膜表面的微米和纳米间隙结构，该结构在薄膜拉伸时能很好地释放局部应力，图17所示为导电薄膜的原始纳米间隙结构图，从图17中可看到纳米间隙处于任意分布状态，当导电薄膜受到应力拉伸时，部 分纳米间隙将会扩张、合并成宽度为微米级别的微米间隙(如图18所示)，以此来释放拉伸中产生的局部应力，而不至于在薄膜内部产生大的贯穿性裂纹，从而保证了其可拉伸性，而不至于在薄膜内部产生大的贯穿性裂纹，从而保证了其可拉伸性。
图19为本发明实施例提供的一种电阻应变片的电阻应变传感层的电阻变化和应变的关系图，电阻应变传感单元的第一电极22和第二电极23的尺寸均为1.5×1.5mm2，电阻应变传感层的尺寸为0.5×10mm2，金薄膜的厚度约为50nm，该薄膜可在150％的一维形变下依旧保持电导通，且在最大拉伸率下具有多次循环的疲劳寿命。如图19所示，y＝ax，y＝ln(R/R0)，x＝ε，a＝2.86178,相关系数r＝0.9963，电阻应变片在循环拉伸100次后测量电阻应变传感层的电阻变化和引起该变化的应变的对应关系图。图19中y＝ln(R/R0)，x＝ε，其中R0为初始电阻值，R为应变时的电阻值，ε为应变量；从图19中可以看出，y和x对应很好的线性关系：y＝ax，从而确保电阻应变片在大幅度应变时，物理量(包括拉力、压力、扭矩、位移、加速度或者温度等)测量的精确性。电阻初始值R0和线性系数a是由电阻应变传感层的尺寸和结构决定的，但电阻值随应变的变化规律类似。从图19中能看出所述电阻应变片具有响应速度快、灵敏度高、线性度好的特点。电阻应变片在保持电导通的条件下能达到的最大形变范围可以通过改变电阻应变传感层的尺寸来调整。
图20为本发明实施例提供的一种电阻应变片的电阻应变传感层拉伸前纳米裂纹间隙分布示意图；图21为本发明实施例提供的一种电阻应变片的电阻应变传感层拉伸时微米-纳米裂纹间隙分布示意图，如图20、图21所示，图20为导电薄膜拉伸前，其表面分布着若干纳米裂纹间隙结构，图21为当导电薄膜受到应力拉伸时，部分纳米间隙局部合并成了微米间隙，以此来释放拉伸中产生的局部应力，不会在薄膜内部产生大的贯穿性裂纹，保证了电阻应变传感层的可拉伸性。
图22为本发明实施例提供的一种具备平铺状基底的电阻应变片的具体应用实施例；图23为本发明实施例提供的一种具备柱状结构基底的电阻应变片的具体应用实施例，如图22、图23所示，给出了电阻应变片的两种结构图，即平铺态结构和柱状结构，两种不同的结构可根据实际应用场合进行合理运用。图22和图23给出了两种电阻应变片在生物医学领域的两个具体运用实施例。图22 为平铺态结构的电阻应变片以护膝的形式贴服在膝关节受损病人或偏瘫病人的膝关节处，在病人做康复训练时，通过实时检测病人膝关节处的活动范围来指导病人做康复训练，以免病人在知觉完全恢复前做出过激过度的运动量，造成膝关节的二次损伤。图23为柱状结构的电阻应变片以手链的形式系在病人的手腕处进行脉搏测试，此种穿戴法较平铺态结构的电阻应变传感器而言，不需要使用粘合剂，具有操作简单、透气性更高的优点，且外形更加美观。
本发明提供一种电阻应变片及电阻应变式传感器，通过在柔性基底贴附一层具有微米和纳米间隙的导电薄膜(亦即电阻应变传感层)，从而形成电阻应变片，再将电阻应变片粘附在被测构件上，当被测构件发生物理形变时，电阻应变片会随着被测构件一起发生形变，即导电薄膜会被拉伸，此时导电薄膜的电阻值会发生改变，通过导电薄膜的电阻值改变量，可以获得被测构件的物理量(包括拉力、压力、扭矩、位移、加速度或者温度等)变化；由于导电薄膜是由表面具有微米和纳米间隙结构的可拉伸导电薄膜制成，最大应变量可达200％；此外可以在被测构件上粘附多个电阻应变片，可同时监测不同方向和不同部位的应变，本发明的电阻应变片结构简单，具有成本低、集成度高、可拓展性好等优点。
本发明至少还具有以下有益效果：
本发明提出了一种新的可大尺度形变的电阻应变片，电阻应变片的导电薄膜采用新颖的微米和纳米间隙结构来实现；当导电薄膜随着柔性基底一起发生形变时，导电薄膜的微米和纳米间隙结构能很好地释放局部应力，而不至于在薄膜内部产生大的贯穿性裂纹，从而保证了其可拉伸性。
本发明将电阻应变片粘贴于被测构件上，构成一种可测量大尺度形变范围的电阻应变式传感器，该电阻应变式传感器可以测量最大200％的应变。
本发明电阻应变片的导电薄膜采用微纳加工工艺制作而成，电阻应变片可加工成微米或纳米尺寸，能实现多个电阻应变片集成，可同时检测不同部位和不同方向的应变，且能与其它传感器、电子器件和***实现集成。
本发明的电阻应变片及电阻应变传感器具有多次循环的疲劳寿命，且其导电薄膜材料可以加工在诸如硅胶、织物等不同弹性基底材料上，受基底(依托)材料制约较小，功能层随基底材料一起具有非常高的柔性，可以弯曲变形，能够满足生物体复杂的体表形态和动态形变要求，能够测定组织的形变，可以应用在如生物医学等领域，应用广泛，在实际应用中更具竞争力。
本发明的电阻应变片及电阻应变传感器制备简单、原理可靠、成本低，制备的电阻应变传感器透明，所使用的材料具有对人体的绝对安全性、环境友好。
电阻应变片采用微纳加工工艺制备而成，可拓展为多个通道，可实现多个传感单元集成，可同时监测不同方向和不同部位的应变。
电阻应变片尺寸小、重量轻、结构简单、使用方便、响应速度快，测量时对被测件的工作状态和应力分布影响较小，既可用于静态测量，又可用于动态测量。
本发明的电阻应变传感器灵敏度高，响应时间短，抗疲劳寿命长。
以上所述仅为本发明示意性的具体实施方式，在不脱离本发明的构思和原则的前提下，任何本领域的技术人员所做出的等同变化与修改，均应属于本发明保护的范围。

Claims (15)

  1. 一种电阻应变片，其特征在于，所述电阻应变片包括：
    一柔性基底(10)；以及
    一第一电阻应变传感单元(20)，附着于所述柔性基底(10)上，所述第一电阻应变传感单元(20)进一步包括：
    一电阻应变传感层(21)，用于根据产生形变的大小改变对应的电阻值；
    一第一电极(22)，与所述电阻应变传感层(21)的一端电连接；以及
    一第二电极(23)，与所述电阻应变传感层(21)的另一端电连接。
  2. 如权利要求1所述的电阻应变片，其特征在于，所述电阻应变片还包括：
    一保护层(30)，覆盖于所述电阻应变传感层(21)上，用于保护所述电阻应变传感层(21)。
  3. 如权利要求2所述的电阻应变片，其特征在于，所述保护层(30)具有弹性，所用材料为橡胶或者为聚二甲基硅氧烷。
  4. 如权利要求1所述的电阻应变片，其特征在于，所述柔性基底(10)具有弹性，所用材料为橡胶或者为聚二甲基硅氧烷。
  5. 如权利要求1所述的电阻应变片，其特征在于，所述柔性基底(10)呈平面结构或者呈柱状结构。
  6. 如权利要求1所述的电阻应变片，其特征在于，所述电阻应变传感层(21)为在较大形变下依旧保持电导通的导电薄膜，所述导电薄膜的材质可为金、铂、铜、石墨烯中的一种。
  7. 如权利要求6所述的电阻应变片，其特征在于，所述导电薄膜具有微米和纳米间隙结构。
  8. 如权利要求1所述的电阻应变片，其特征在于，所述电阻应变片还包括：
    与所述第一电阻应变传感单元(20)垂直交叉布局的第二电阻应变传感单元(40)，附着于所述柔性基底(10)上。
  9. 如权利要求8所述的电阻应变片，其特征在于，所述第一电阻应变传感单元(20)和所述第二电阻应变传感单元(40)之间具有绝缘层。
  10. 如权利要求1所述的电阻应变片，其特征在于，所述电阻应变片还包括：
    与所述第一电阻应变传感单元(20)并排布局的第三电阻应变传感单元(50)。
  11. 如权利要求1所述的电阻应变片，其特征在于，所述电阻应变片还包括：
    与所述第一电阻应变传感单元(20)之间成第一角度(α)布局的第四电阻应变传感单元(60)；
    和/或，与所述第一电阻应变传感单元(20)之间成第二角度(β)布局的第五电阻应变传感单元(70)；
    和/或，与所述第一电阻应变传感单元(20)之间成第三角度(γ)布局的第六电阻应变传感单元(80)；
    和/或，与所述第一电阻应变传感单元(20)之间成第四角度(δ)布局的第七电阻应变传感单元(90)；
    其中，所述第三电阻应变传感单元(50)、所述第四电阻应变传感单元(60)、所述第五电阻应变传感单元(70)、所述第六电阻应变传感单元(80)、所述第七电阻应变传感单元(90)都附着于所述柔性基底(10)上。
  12. 如权利要求11所述的电阻应变片，其特征在于，所述第四电阻应变传感单元(60)、和/或所述第五电阻应变传感单元(70)、和/或所述第六电阻应变传感单元(80)和/或所述第七电阻应变传感单元(90)围绕所述第一电阻应变传感单元(20)布局。
  13. 如权利要求10所述的电阻应变片，其特征在于，所述第一电阻应变传感单元(20)、和/或所述第四电阻应变传感单元(60)、和/或所述第五电阻应变传感单元(70)、和/或所述第六电阻应变传感单元(80)、和/或所述第七电阻应变传感单元(90)之间具有绝缘层。
  14. 一种电阻应变式传感器，其特征在于，所述电阻应变式传感器包括：权利要求1-13任一所述的电阻应变片(1000)和一被测构件(2000)，
    将所述电阻应变片(1000)贴附在所述被测构件(2000)表面，与所述被测构件(2000)在物理量的作用下一起产生形变，通过测量形变过程中所述电阻应变片(1000)的电阻值变化量来测量作用于所述被测构件(2000)上的所述物理量。
  15. 如权利要求14所述的电阻应变式传感器，其特征在于，所述物理量包括：拉力、和/或压力、和/或扭矩、和/或位移、加速度和/或温度。
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