WO2016189951A1 - Filter device - Google Patents

Filter device Download PDF

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Publication number
WO2016189951A1
WO2016189951A1 PCT/JP2016/059613 JP2016059613W WO2016189951A1 WO 2016189951 A1 WO2016189951 A1 WO 2016189951A1 JP 2016059613 W JP2016059613 W JP 2016059613W WO 2016189951 A1 WO2016189951 A1 WO 2016189951A1
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WO
WIPO (PCT)
Prior art keywords
filter
substrate
electronic component
main surface
filter device
Prior art date
Application number
PCT/JP2016/059613
Other languages
French (fr)
Japanese (ja)
Inventor
幸一郎 川▲崎▼
Original Assignee
株式会社村田製作所
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Publication of WO2016189951A1 publication Critical patent/WO2016189951A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/46—Networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a filter device having a POP structure.
  • Patent Document 1 discloses an electronic component having a package on package (POP) structure. That is, an electronic component element is mounted on the first package substrate or a wiring circuit is formed. A second package substrate is stacked on the first package substrate. Electronic component elements such as semiconductor elements are mounted on the second package substrate.
  • POP package on package
  • the out-of-band attenuation may not increase.
  • An object of the present invention is to provide a filter device having a POP structure and capable of sufficiently increasing out-of-band attenuation.
  • a filter device includes a first substrate having first and second main surfaces facing each other, and a first electronic component mounted on the first main surface of the first substrate.
  • a first electron having an element and a first sealing resin layer provided on the first main surface of the first substrate and provided around the first electronic component element;
  • the component portion has third and fourth main surfaces facing each other, and the fourth main surface is positioned on the first sealing resin layer of the first electronic component portion.
  • a second substrate laminated on the first sealing resin layer; a filter element as a second electronic component element mounted or configured on the second substrate; and sealing the filter element A second electronic component unit having a sealing structure, wherein the filter element is connected to a ground potential. Has a terminal of said plurality of are common in position of the first electronic component portion side of the third main surface of said second substrate.
  • the plurality of terminals are positioned between the first main surface of the first substrate and the first and second main surfaces of the first substrate.
  • the second main surface of the first substrate is shared. In this case, the inductance due to the wiring length between the common position and the ground potential can be further reduced, and the out-of-band attenuation of the filter can be further increased.
  • the plurality of terminals are shared on the fourth main surface side with respect to the third main surface of the second substrate.
  • the filter device further includes a plurality of connection electrodes electrically connected to the plurality of terminals, the plurality of connection electrodes being the first of the first substrate.
  • the plurality of connection electrodes being the first of the first substrate.
  • each of the plurality of connection electrodes has a via-hole electrode portion that penetrates the first sealing resin layer.
  • the filter device can be downsized.
  • the filter element includes a transmission filter and a reception filter, and at least one of the plurality of terminals is a ground terminal of the reception filter, At least one remaining terminal among the plurality of terminals is a ground terminal of the transmission filter. In this case, it is possible to effectively suppress signal wraparound between the transmission filter and the reception filter.
  • the sealing structure of the second electronic component part is a sealing resin layer. In this case, it is possible to further reduce the size of the filter device.
  • the sealing structure of the second electronic component unit is provided on the second substrate, and has a support layer having an opening, And a lid provided to cover the opening of the support layer.
  • a filter element can be configured by forming a surface acoustic wave element or the like.
  • the filter device according to the present invention can sufficiently increase the out-of-band attenuation.
  • FIG. 1 is a front sectional view of a filter device according to a first embodiment of the present invention.
  • FIG. 2 is a bottom view showing the electrode structure on the second main surface of the first substrate in the first embodiment of the present invention.
  • FIG. 3 is a schematic diagram showing an electrical connection structure in the filter device according to the first embodiment of the present invention.
  • FIG. 4 is a circuit diagram of the transmission filter and the reception filter in the first embodiment of the present invention.
  • FIG. 5 is a diagram illustrating the filter characteristics of the transmission filter in the filter devices of the first embodiment and the comparative example of the present invention.
  • FIG. 6 is a diagram illustrating the filter characteristics of the reception filter in the filter devices of the first embodiment and the comparative example of the present invention.
  • FIG. 7 is a diagram showing isolation characteristics in the filter devices of the first embodiment and the comparative example of the present invention.
  • FIG. 8 is a schematic partial cutaway front sectional view for explaining the electrode structure in the first substrate in the filter device according to the second embodiment of the present invention
  • FIG. 1 is a front sectional view of a filter device according to a first embodiment of the present invention.
  • the filter device 1 has a structure in which a second electronic component unit 21 is stacked on a first electronic component unit 11. That is, the filter device 1 has a so-called POP structure.
  • the first electronic component unit 11 has a first substrate 12.
  • the first substrate 12 is made of an insulating material or a semiconductor material.
  • the first substrate 12 has first and second main surfaces 12a and 12b facing each other.
  • the first electronic component element 13 is mounted on the first main surface 12a.
  • the first electronic component element 13 is an inductance component for impedance matching.
  • the first electronic component element 13 is not limited to an inductance component, and may be another passive component such as a capacitor or a resistor, or may be an active component such as an IC.
  • the electronic component element 13 is joined to the electrode lands 14a and 14b via bumps 15a and 15b.
  • first substrate 12 On the first main surface 12a of the first substrate 12, in addition to the electrode lands 14a and 14b, a plurality of electrode lands such as electrode lands 14c to 14e are provided.
  • via hole electrodes 16a to 16c are provided in the first substrate 12.
  • One ends of the via-hole electrodes 16a to 16c are joined to the electrode lands 14c to 14e.
  • the other ends of the via-hole electrodes 16a to 16c reach the second main surface 12b. Then, it is connected to terminal electrodes 17a to 17c provided on the second main surface 12b.
  • FIG. 2 is a bottom view showing the electrode structure on the second main surface 12b of the first substrate 12. As shown in FIG. On the second main surface 12b, terminal electrodes 17d to 17i are provided in addition to the terminal electrodes 17a to 17c. A connection wiring 17j that connects the terminal electrodes 17a and 17b is also provided.
  • the first sealing resin layer 18 is provided on the first main surface 12a.
  • the first sealing resin layer 18 is provided so as to seal the first electronic component element 13.
  • Via-hole electrodes 19a to 19c are provided so as to penetrate the first sealing resin layer.
  • One ends of the via-hole electrodes 19a to 19c are connected to the electrode lands 14c to 14e, respectively.
  • electrode lands 19d to 19f are provided on the upper surface of the first sealing resin layer 18. Electrode lands 19d-19f are connected to via-hole electrodes 19a-19c.
  • the second electronic component unit 21 has a second substrate 22.
  • the second substrate 22 has third and fourth main surfaces 22a and 22b facing each other.
  • a filter element 23 is mounted on the third main surface 22a.
  • the filter element 23 is a duplexer having a transmission filter and a reception filter.
  • the filter element 23 is joined to electrode lands 24a and 24b provided on the third main surface 22a.
  • the filter element 23 is also bonded to a plurality of electrode lands other than the electrode lands 24a and 24b.
  • a plurality of terminal electrodes 24c to 24e are provided on the third main surface 22a.
  • the plurality of terminal electrodes 24c to 24e are electrically connected to the filter element 23 by wiring (not shown).
  • the terminal electrode 24c is electrically connected to a portion connected to the ground potential of the transmission filter.
  • the terminal electrode 24d is electrically connected to a portion connected to the ground potential of the reception filter. Accordingly, the plurality of terminal electrodes 24c and 24d correspond to terminal electrodes connected to the ground potential.
  • a second sealing resin layer 29 is provided so as to cover the filter element 23.
  • via hole electrodes 25a to 25c are provided. Via-hole electrodes 25a to 25c are connected to terminal electrodes 24c to 24e. Electrode lands 26a to 26c are provided on the fourth main surface 22b. The electrode lands 26a to 26c are electrically connected to the via hole electrodes 25a to 25c, respectively. Metal bumps 27a to 27c are provided on the electrode lands 26a to 26c. The electrode lands 26a to 26c are joined to the electrode lands 19d to 19f through the metal bumps 27a to 27c.
  • the electrode lands 26 a and 26 b are not electrically connected to each other in the second electronic component unit 21.
  • the electrode land 26 a is electrically connected to a terminal electrode 17 a provided on the second main surface 12 b of the first substrate 12 in the first electronic component unit 11.
  • the electrode land 26 b is electrically connected to a terminal electrode 17 b provided on the second main surface 12 b of the first substrate 12.
  • the terminal electrode 17a and the terminal electrode 17b are commonly connected via a connection wiring 17j. Therefore, the portion of the filter element 23 connected to the ground potential of the transmission filter and the portion connected to the ground potential of the reception filter are not shared in the second electronic component unit 21, and the first The electronic component unit 11 is shared. Therefore, it is possible to suppress the signal wraparound between the transmission filter and the reception filter. Therefore, the attenuation amount outside the pass band in the transmission filter and the reception filter can be sufficiently increased. This will be described in more detail with reference to FIGS.
  • FIG. 3 is a schematic diagram showing an electrical connection structure in the filter device 1 of the first embodiment.
  • a first electronic component element 13 as an inductance component is provided in the first electronic component section 11.
  • a filter element 23 is configured in the second electronic component unit 21.
  • the filter element 23 includes a transmission filter 23A and a reception filter 23B.
  • the filter element 23 has an antenna terminal 23a.
  • a transmission filter 23A is connected between the antenna terminal 23a and the transmission terminal 23b.
  • a reception filter 23B is connected between the antenna terminal 23a and the reception terminal 23c.
  • the antenna terminal 23 a is connected to the ground potential via the first electronic component element 13.
  • the transmission filter 23A has a terminal 23d connected to the ground potential. This terminal 23d is electrically connected to the terminal electrode 24c.
  • the reception filter 23B also has a terminal 23e connected to the ground potential. This terminal 23e is connected to the terminal electrode 24d.
  • the terminal electrodes 24 c and 24 d are shared by the connection wiring 17 j on the second main surface 12 b of the first substrate 12 of the first electronic component unit 11. That is, the terminal electrodes 17a and 17b are electrically connected by the connection wiring 17j.
  • the terminal 23d and the terminal 23e are commonly connected on the second main surface 12b of the first substrate 12 and connected to the ground potential. Therefore, in the transmission filter 23A and the reception filter 23B, the ground is strengthened, and a signal wraparound between them is difficult to occur.
  • the terminal 23d and the terminal 23e are connected in common on, for example, the second substrate 22 of the second electronic component unit 21, and are terminal electrodes provided on the second main surface 12b of the first substrate 12.
  • a large inductance component due to the wiring length is inserted between the common connection portion of the terminals 23d and 23e and the ground potential. Therefore, a signal wraparound between the terminal 23d and the terminal 23e is likely to occur, and the ground is difficult to be strengthened.
  • the first electronic component element 13 is mounted in the first electronic component section 11. Therefore, in the first electronic component unit 11, the thickness of the first sealing resin layer 18 is considerably thick. Therefore, the wiring length between the above-described ground potentials is considerably long in the first electronic component unit 11. Therefore, a large inductance is inserted between the common connection point and the ground potential.
  • the common connection is made in the connection wiring 17j. That is, they are commonly connected on the second main surface 12 b of the first substrate 12 of the first electronic component unit 11. Therefore, it is difficult to insert a large inductance between the ground potential of the mounting board on which the filter device is mounted and the common connection portion. Therefore, it is possible to strengthen the ground in the transmission filter 23A and the reception filter 23B, and it is difficult for a signal to wrap around between them. Therefore, it is possible to increase the out-of-band attenuation. This will be described more specifically with reference to FIGS.
  • FIG. 4 is a circuit diagram showing a Band1 branching device having the circuit configuration of the transmission filter 23A (passband 1920-1980 MHz) and the reception filter 23B (passband 2110-2170 Hz).
  • the transmission filter 23A is a ladder type filter having a plurality of series arm resonators S1 to S5 and a plurality of parallel arm resonators P1 to P4.
  • Each of the series arm resonators S1 to S5 and the parallel arm resonators P1 to P4 is preferably an elastic wave resonator, and the IDT electrode on the piezoelectric substrate and the reflectors disposed on both sides of the IDT electrode in the elastic wave propagation direction.
  • the surface acoustic wave resonator includes:
  • the transmission filter 23A is connected to the ground potential via at least one transmission filter matching element.
  • the reception filter 23B includes longitudinally coupled resonator type surface acoustic wave filters 31 and 32.
  • the reception filter 23B is connected to the ground potential via at least one reception filter matching element.
  • circuit configurations of the transmission filter 23A and the reception filter 23B are not particularly limited. That is, a band-pass filter having another circuit configuration may be used. Moreover, the band pass filter may be configured using a resonator other than the surface acoustic wave resonator.
  • FIG. 5 shows the filter characteristics of the transmission filter in the filter device 1 of this embodiment
  • FIG. 6 shows the filter characteristics of the reception filter
  • FIG. 7 is a diagram showing isolation characteristics in the filter device 1.
  • the antenna is sometimes referred to as Ant, the transmission filter side as Tx, and the reception filter side as Rx.
  • FIGS. 5 to 7 show the results of the embodiment.
  • the Tx matching element and other terminals (Ant matching element, Rx matching element, TxGND terminal, RxGND terminal) are arranged on the third main surface 22a of the second substrate 22 of the second electronic component unit 21.
  • the filter device was prepared in the same manner as in the above embodiment except that they were commonly connected.
  • the filter characteristics of the transmission filter and the reception filter of this comparative example are shown by solid lines in FIGS.
  • FIG. 7 shows the isolation characteristic in the filter device of the comparative example by a solid line.
  • the attenuation in the vicinity of 2110 to 2170 MHz outside the pass band of the transmission filter that is, the attenuation in the pass band of the reception filter Can be increased.
  • FIG. 6 according to the embodiment, it is possible to increase the attenuation in the vicinity of 1980 to 2009 MHz, that is, the pass band of the transmission filter and the vicinity thereof, as compared with the comparative example.
  • the isolation between the transmission filter and the reception filter is improved according to the embodiment as compared with the comparative example.
  • the signal is transmitted from the Tx matching L (Tx matching element) to the Ant terminal at 2110 to 2170 MHz which is the pass band of the reception filter, the signal from the Ant terminal does not deteriorate the loss because the signal is from the reception filter pass band. Will reach. Therefore, improving the attenuation of the Rx band of the transmission filter is synonymous with improving the Rx band isolation.
  • the Tx band isolation characteristic can be improved by improving the Tx band attenuation of the reception filter shown in FIG.
  • the terminal electrodes 17 a and 17 b connected to the ground potential are commonly connected on the second main surface 12 b of the first substrate 12.
  • common connection may be achieved in the first substrate 12 by the internal connection wiring 17k. That is, the internal connection wiring 17 k is provided in the first substrate 12. The internal connection wiring 17k is electrically connected to the via hole electrode 16d.
  • the via hole electrode 16 d extends from the first main surface 12 a of the first substrate 12 to the inside of the first substrate 12. The via hole electrode 16d is electrically connected to the electrode land 14d. Further, the via-hole electrode 16a is divided into two, and the internal connection wiring 17k reaches between the upper part and the lower part.
  • the terminals connected to the ground potential of the transmission filter 23A and the reception filter 23B are shared by the internal connection wiring 17k.
  • a common connection portion exists in the first substrate 12. Therefore, it is difficult to insert a large inductance between the common connection portion and the ground potential. Therefore, similarly to the first embodiment, signal wraparound between the transmission filter 23A and the reception filter 23B can be suppressed.
  • the portion of the filter element 23 that connects the plurality of terminals connected to the ground potential is connected to the third main surface 22a of the second substrate 22 in common.
  • the common connection portion may be on the first substrate 12 side with respect to the third main surface 22 a of the second substrate 22.
  • first substrate 12 More preferably, it is desirable to make a common connection in the first main surface 12a of the first substrate 12, the first substrate 12 and the second main surface 12b of the first substrate 12, more preferably the first substrate 12. As in the embodiment, it is more preferable to make a common connection on the second main surface 12b of the first substrate 12.
  • the second electronic component unit 21 has the second sealing resin layer 29, but does not have the second sealing resin layer 29, and has a WLP structure filter. It may be a device.
  • the plurality of terminals connected to the ground potential in the filter element are not limited to the ground terminal of the transmission filter and the ground terminal of the reception filter.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Acoustics & Sound (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

Provided is a filter device, which has a package-on-package (POP) structure, and enables out-of-band attenuation to increase. On a first electronic component unit 11, wherein a first electronic component element 13 is mounted on a first substrate 12, and a first sealing resin layer 18 is provided, a second electronic component unit 21, wherein a filter element 23 is provided on a second substrate 22, is laminated. In the filter device 1, a plurality of terminals connected to a ground potential, said terminals being among a plurality of terminals of the filter element 23, are commonly connected at positions further toward the first electronic component unit 11 side than a third main surface 22a of the second substrate 22.

Description

フィルタ装置Filter device
　本発明は、ＰＯＰ構造を有する、フィルタ装置に関する。 The present invention relates to a filter device having a POP structure.
　下記の特許文献１には、パッケージオンパッケージ（ＰＯＰ）構造の電子部品が開示されている。すなわち、第１のパッケージ基板において電子部品素子が搭載されていたり、あるいは配線回路が形成されている。そして、第１のパッケージ基板上に、第２のパッケージ基板が積層されている。この第２のパッケージ基板上に、半導体素子などの電子部品素子が実装されている。 The following Patent Document 1 discloses an electronic component having a package on package (POP) structure. That is, an electronic component element is mounted on the first package substrate or a wiring circuit is formed. A second package substrate is stacked on the first package substrate. Electronic component elements such as semiconductor elements are mounted on the second package substrate.
特開２０１０－２１９５３９号公報JP 2010-219539 A
　ＰＯＰ構造の電子部品において、上方に位置する第２のパッケージ基板に、帯域通過型のフィルタ素子が構成もしくは搭載されている場合、帯域外減衰量が大きくならないことがあった。 In an electronic component having a POP structure, when a band-pass filter element is configured or mounted on the second package substrate positioned above, the out-of-band attenuation may not increase.
　本発明の目的は、ＰＯＰ構造を有し、帯域外減衰量を十分大きくすることができる、フィルタ装置を提供することにある。 An object of the present invention is to provide a filter device having a POP structure and capable of sufficiently increasing out-of-band attenuation.
　本発明に係るフィルタ装置は、対向し合う第１及び第２の主面を有する第１の基板と、前記第１の基板の前記第１の主面上に実装されている第１の電子部品素子と、前記第１の基板の前記第１の主面上に設けられており、前記第１の電子部品素子の周囲に設けられた第１の封止樹脂層とを有する、第１の電子部品部と、対向し合う第３及び第４の主面を有し、前記第４の主面が前記第１の電子部品部の前記第１の封止樹脂層上に位置するように、前記第１の封止樹脂層上に積層された第２の基板と、前記第２の基板上に実装もしくは構成されている第２の電子部品素子としてのフィルタ素子と、前記フィルタ素子を封止している封止構造とを有する第２の電子部品部と、を備え、前記フィルタ素子が、グラウンド電位に接続される複数の端子を有し、該複数の端子が、前記第２の基板の前記第３の主面よりも前記第１の電子部品部側の位置において共通化されている。 A filter device according to the present invention includes a first substrate having first and second main surfaces facing each other, and a first electronic component mounted on the first main surface of the first substrate. A first electron having an element and a first sealing resin layer provided on the first main surface of the first substrate and provided around the first electronic component element; The component portion has third and fourth main surfaces facing each other, and the fourth main surface is positioned on the first sealing resin layer of the first electronic component portion. A second substrate laminated on the first sealing resin layer; a filter element as a second electronic component element mounted or configured on the second substrate; and sealing the filter element A second electronic component unit having a sealing structure, wherein the filter element is connected to a ground potential. Has a terminal of said plurality of are common in position of the first electronic component portion side of the third main surface of said second substrate.
　本発明に係るフィルタ装置のある特定の局面では、前記複数の端子が、前記第１の基板の前記第１の主面、前記第１の基板の前記第１及び第２の主面間の位置または前記第１の基板の前記第２の主面で共通化されている。この場合には、共通化される位置からグラウンド電位との間の配線長によるインダクタンスをより一層小さくすることができ、フィルタの帯域外減衰量をより一層大きくすることができる。 In a specific aspect of the filter device according to the present invention, the plurality of terminals are positioned between the first main surface of the first substrate and the first and second main surfaces of the first substrate. Alternatively, the second main surface of the first substrate is shared. In this case, the inductance due to the wiring length between the common position and the ground potential can be further reduced, and the out-of-band attenuation of the filter can be further increased.
　本発明に係るフィルタ装置の他の特定の局面では、前記複数の端子が、前記第２の基板の前記第３の主面よりも前記第４の主面側において共通化されている。 In another specific aspect of the filter device according to the present invention, the plurality of terminals are shared on the fourth main surface side with respect to the third main surface of the second substrate.
　本発明に係るフィルタ装置の別の特定の局面では、前記複数の端子に電気的に接続されている複数の接続電極をさらに備え、該複数の接続電極が、前記第１の基板の前記第１の主面上に設けられている前記第１の封止樹脂層に至っている。この場合には、封止樹脂層に至っている部分までの間で共通化が果たされていないため、帯域外減衰量をより一層大きくすることができる。 In another specific aspect of the filter device according to the present invention, the filter device further includes a plurality of connection electrodes electrically connected to the plurality of terminals, the plurality of connection electrodes being the first of the first substrate. To the first sealing resin layer provided on the main surface. In this case, since no commonality is achieved up to the portion reaching the sealing resin layer, the out-of-band attenuation can be further increased.
　本発明のフィルタ装置のさらに他の特定の局面では、前記複数の接続電極が、前記第１の封止樹脂層を貫くビアホール電極部をそれぞれ有する。この場合には、フィルタ装置の小型化を図ることができる。 In still another specific aspect of the filter device of the present invention, each of the plurality of connection electrodes has a via-hole electrode portion that penetrates the first sealing resin layer. In this case, the filter device can be downsized.
　本発明に係るフィルタ装置の別の特定の局面では、前記フィルタ素子が、送信フィルタと受信フィルタとを有し、前記複数の端子のうち少なくとも１つの端子が、前記受信フィルタのグラウンド端子であり、前記複数の端子のうちの残りの少なくとも１つの端子が、前記送信フィルタのグラウンド端子である。この場合には、送信フィルタと受信フィルタとの間での信号の回り込みを効果的に抑制することができる。 In another specific aspect of the filter device according to the present invention, the filter element includes a transmission filter and a reception filter, and at least one of the plurality of terminals is a ground terminal of the reception filter, At least one remaining terminal among the plurality of terminals is a ground terminal of the transmission filter. In this case, it is possible to effectively suppress signal wraparound between the transmission filter and the reception filter.
　本発明に係るフィルタ装置のさらに他の特定の局面では、前記第２の電子部品部の前記封止構造が、封止樹脂層である。この場合には、フィルタ装置の小型化をより一層図ることができる。 In still another specific aspect of the filter device according to the present invention, the sealing structure of the second electronic component part is a sealing resin layer. In this case, it is possible to further reduce the size of the filter device.
　本発明に係るフィルタ装置のさらに他の特定の局面では、前記第２の電子部品部の前記封止構造が、前記第２の基板上に設けられており、開口部を有する支持層と、前記支持層の前記開口部を覆うように設けられた蓋材とを有する。この場合には、弾性表面波素子などを形成してフィルタ素子を構成することができる。 In still another specific aspect of the filter device according to the present invention, the sealing structure of the second electronic component unit is provided on the second substrate, and has a support layer having an opening, And a lid provided to cover the opening of the support layer. In this case, a filter element can be configured by forming a surface acoustic wave element or the like.
　本発明に係るフィルタ装置によれば、帯域外減衰量を十分大きくすることが可能となる。 The filter device according to the present invention can sufficiently increase the out-of-band attenuation.
図１は、本発明の第１の実施形態に係るフィルタ装置の正面断面図である。FIG. 1 is a front sectional view of a filter device according to a first embodiment of the present invention. 図２は、本発明の第１の実施形態における第１の基板の第２の主面上の電極構造を示す底面図である。FIG. 2 is a bottom view showing the electrode structure on the second main surface of the first substrate in the first embodiment of the present invention. 図３は、本発明の第１の実施形態のフィルタ装置における電気的接続構造を示す模式図である。FIG. 3 is a schematic diagram showing an electrical connection structure in the filter device according to the first embodiment of the present invention. 図４は、本発明の第１の実施形態における送信フィルタ及び受信フィルタの回路図である。FIG. 4 is a circuit diagram of the transmission filter and the reception filter in the first embodiment of the present invention. 図５は、本発明の第１の実施形態及び比較例のフィルタ装置における送信フィルタのフィルタ特性を示す図である。FIG. 5 is a diagram illustrating the filter characteristics of the transmission filter in the filter devices of the first embodiment and the comparative example of the present invention. 図６は、本発明の第１の実施形態及び比較例のフィルタ装置における受信フィルタのフィルタ特性を示す図である。FIG. 6 is a diagram illustrating the filter characteristics of the reception filter in the filter devices of the first embodiment and the comparative example of the present invention. 図７は、本発明の第１の実施形態及び比較例のフィルタ装置におけるアイソレーション特性を示す図である。FIG. 7 is a diagram showing isolation characteristics in the filter devices of the first embodiment and the comparative example of the present invention. 図８は、本発明の第２の実施形態に係るフィルタ装置における第１の基板内の電極構造を説明するための模式的部分切欠き正面断面図である。FIG. 8 is a schematic partial cutaway front sectional view for explaining the electrode structure in the first substrate in the filter device according to the second embodiment of the present invention.
　以下、図面を参照しつつ、本発明の具体的な実施形態を説明することにより、本発明を明らかにする。 Hereinafter, the present invention will be clarified by describing specific embodiments of the present invention with reference to the drawings.
　なお、本明細書に記載の各実施形態は、例示的なものであり、異なる実施形態間において、構成の部分的な置換または組み合わせが可能であることを指摘しておく。 It should be pointed out that each embodiment described in this specification is an example, and a partial replacement or combination of configurations is possible between different embodiments.
　図１は、本発明の第１の実施形態に係るフィルタ装置の正面断面図である。フィルタ装置１は、第１の電子部品部１１上に第２の電子部品部２１が積層された構造を有する。すなわち、フィルタ装置１は、いわゆるＰＯＰ構造を有している。 FIG. 1 is a front sectional view of a filter device according to a first embodiment of the present invention. The filter device 1 has a structure in which a second electronic component unit 21 is stacked on a first electronic component unit 11. That is, the filter device 1 has a so-called POP structure.
　第１の電子部品部１１は、第１の基板１２を有する。第１の基板１２は、絶縁性材料や半導体材料からなる。第１の基板１２は、対向し合っている第１，第２の主面１２ａ，１２ｂを有する。第１の主面１２ａ上に、第１の電子部品素子１３が実装されている。第１の電子部品素子１３は、本実施形態では、インピーダンス整合用のインダクタンス部品である。もっとも、第１の電子部品素子１３は、インダクタンス部品に限らず、コンデンサや抵抗などの他の受動部品であってもよく、あるいはＩＣなどの能動部品であってもよい。 The first electronic component unit 11 has a first substrate 12. The first substrate 12 is made of an insulating material or a semiconductor material. The first substrate 12 has first and second main surfaces 12a and 12b facing each other. The first electronic component element 13 is mounted on the first main surface 12a. In the present embodiment, the first electronic component element 13 is an inductance component for impedance matching. However, the first electronic component element 13 is not limited to an inductance component, and may be another passive component such as a capacitor or a resistor, or may be an active component such as an IC.
　電子部品素子１３は、電極ランド１４ａ，１４ｂに、バンプ１５ａ，１５ｂを介して接合されている。 The electronic component element 13 is joined to the electrode lands 14a and 14b via bumps 15a and 15b.
　第１の基板１２の第１の主面１２ａ上には、電極ランド１４ａ，１４ｂの他、電極ランド１４ｃ～１４ｅなどの複数の電極ランドが設けられている。また、第１の基板１２内には、ビアホール電極１６ａ～１６ｃが設けられている。ビアホール電極１６ａ～１６ｃの一方端が、電極ランド１４ｃ～１４ｅに接合されている。ビアホール電極１６ａ～１６ｃの他方端は、第２の主面１２ｂに至っている。そして、第２の主面１２ｂ上に設けられた端子電極１７ａ～１７ｃに接続されている。 On the first main surface 12a of the first substrate 12, in addition to the electrode lands 14a and 14b, a plurality of electrode lands such as electrode lands 14c to 14e are provided. In the first substrate 12, via hole electrodes 16a to 16c are provided. One ends of the via-hole electrodes 16a to 16c are joined to the electrode lands 14c to 14e. The other ends of the via-hole electrodes 16a to 16c reach the second main surface 12b. Then, it is connected to terminal electrodes 17a to 17c provided on the second main surface 12b.
　図２は、この第１の基板１２の第２の主面１２ｂ上の電極構造を示す底面図である。第２の主面１２ｂ上には端子電極１７ａ～１７ｃの他、端子電極１７ｄ～１７ｉが設けられている。また、端子電極１７ａ，１７ｂを接続している接続配線１７ｊも設けられている。 FIG. 2 is a bottom view showing the electrode structure on the second main surface 12b of the first substrate 12. As shown in FIG. On the second main surface 12b, terminal electrodes 17d to 17i are provided in addition to the terminal electrodes 17a to 17c. A connection wiring 17j that connects the terminal electrodes 17a and 17b is also provided.
　図１に戻り、第１の主面１２ａ上には、第１の封止樹脂層１８が設けられている。第１の封止樹脂層１８は、第１の電子部品素子１３を封止するように設けられている。この第１の封止樹脂層１８を貫くように、ビアホール電極１９ａ～１９ｃが設けられている。ビアホール電極１９ａ～１９ｃの一端が、それぞれ、電極ランド１４ｃ～１４ｅに接続されている。第１の封止樹脂層１８の上面には、電極ランド１９ｄ～１９ｆが設けられている。電極ランド１９ｄ～１９ｆが、ビアホール電極１９ａ～１９ｃに接続されている。 1, the first sealing resin layer 18 is provided on the first main surface 12a. The first sealing resin layer 18 is provided so as to seal the first electronic component element 13. Via-hole electrodes 19a to 19c are provided so as to penetrate the first sealing resin layer. One ends of the via-hole electrodes 19a to 19c are connected to the electrode lands 14c to 14e, respectively. On the upper surface of the first sealing resin layer 18, electrode lands 19d to 19f are provided. Electrode lands 19d-19f are connected to via-hole electrodes 19a-19c.
　他方、第２の電子部品部２１は、第２の基板２２を有する。第２の基板２２は、対向し合う第３及び第４の主面２２ａ，２２ｂを有する。第３の主面２２ａ上に、フィルタ素子２３が実装されている。フィルタ素子２３は、送信フィルタと受信フィルタとを有するデュプレクサである。 On the other hand, the second electronic component unit 21 has a second substrate 22. The second substrate 22 has third and fourth main surfaces 22a and 22b facing each other. A filter element 23 is mounted on the third main surface 22a. The filter element 23 is a duplexer having a transmission filter and a reception filter.
　フィルタ素子２３は、第３の主面２２ａ上に設けられた電極ランド２４ａ，２４ｂに接合されている。なお、フィルタ素子２３は、電極ランド２４ａ，２４ｂ以外の複数の電極ランドにも接合されている。 The filter element 23 is joined to electrode lands 24a and 24b provided on the third main surface 22a. The filter element 23 is also bonded to a plurality of electrode lands other than the electrode lands 24a and 24b.
　第３の主面２２ａ上には、複数の端子電極２４ｃ～２４ｅが設けられている。複数の端子電極２４ｃ～２４ｅは、図示しない配線によりフィルタ素子２３に電気的に接続されている。このうち、端子電極２４ｃは送信フィルタのグラウンド電位に接続される部分に電気的に接続されている。また、端子電極２４ｄは、受信フィルタのグラウンド電位に接続される部分に電気的に接続されている。従って、この複数の端子電極２４ｃ，２４ｄは、グラウンド電位に接続される端子電極に相当する。 A plurality of terminal electrodes 24c to 24e are provided on the third main surface 22a. The plurality of terminal electrodes 24c to 24e are electrically connected to the filter element 23 by wiring (not shown). Among these, the terminal electrode 24c is electrically connected to a portion connected to the ground potential of the transmission filter. The terminal electrode 24d is electrically connected to a portion connected to the ground potential of the reception filter. Accordingly, the plurality of terminal electrodes 24c and 24d correspond to terminal electrodes connected to the ground potential.
　フィルタ素子２３を覆うように、第２の封止樹脂層２９が設けられている。 A second sealing resin layer 29 is provided so as to cover the filter element 23.
　第２の基板２２内には、ビアホール電極２５ａ～２５ｃが設けられている。ビアホール電極２５ａ～２５ｃが、端子電極２４ｃ～２４ｅに接続されている。第４の主面２２ｂ上には、電極ランド２６ａ～２６ｃが設けられている。電極ランド２６ａ～２６ｃが、ビアホール電極２５ａ～２５ｃにそれぞれ電気的に接続されている。上記電極ランド２６ａ～２６ｃ上に、金属バンプ２７ａ～２７ｃが設けられている。この金属バンプ２７ａ～２７ｃを介して、電極ランド２６ａ～２６ｃが、電極ランド１９ｄ～１９ｆに接合されている。 In the second substrate 22, via hole electrodes 25a to 25c are provided. Via-hole electrodes 25a to 25c are connected to terminal electrodes 24c to 24e. Electrode lands 26a to 26c are provided on the fourth main surface 22b. The electrode lands 26a to 26c are electrically connected to the via hole electrodes 25a to 25c, respectively. Metal bumps 27a to 27c are provided on the electrode lands 26a to 26c. The electrode lands 26a to 26c are joined to the electrode lands 19d to 19f through the metal bumps 27a to 27c.
　電極ランド２６ａ，２６ｂは、第２の電子部品部２１内においては相互に電気的に接続されていない。電極ランド２６ａは、第１の電子部品部１１における第１の基板１２の第２の主面１２ｂに設けられた端子電極１７ａに電気的に接続されている。他方、電極ランド２６ｂは、第１の基板１２の第２の主面１２ｂ上に設けられた端子電極１７ｂに電気的に接続されている。そして、端子電極１７ａと端子電極１７ｂとが、接続配線１７ｊを介して共通接続されている。従って、フィルタ素子２３の送信フィルタのグラウンド電位に接続される部分と、受信フィルタのグラウンド電位に接続されている部分とが第２の電子部品部２１内において共通化されておらず、第１の電子部品部１１内で共通化されている。よって、送信フィルタと受信フィルタとの間の信号の回り込みを抑制することができる。そのため、送信フィルタ及び受信フィルタにおける通過帯域外における減衰量を十分大きくすることができる。これを、図３～図８を参照してより詳細に説明する。 The electrode lands 26 a and 26 b are not electrically connected to each other in the second electronic component unit 21. The electrode land 26 a is electrically connected to a terminal electrode 17 a provided on the second main surface 12 b of the first substrate 12 in the first electronic component unit 11. On the other hand, the electrode land 26 b is electrically connected to a terminal electrode 17 b provided on the second main surface 12 b of the first substrate 12. The terminal electrode 17a and the terminal electrode 17b are commonly connected via a connection wiring 17j. Therefore, the portion of the filter element 23 connected to the ground potential of the transmission filter and the portion connected to the ground potential of the reception filter are not shared in the second electronic component unit 21, and the first The electronic component unit 11 is shared. Therefore, it is possible to suppress the signal wraparound between the transmission filter and the reception filter. Therefore, the attenuation amount outside the pass band in the transmission filter and the reception filter can be sufficiently increased. This will be described in more detail with reference to FIGS.
　図３は、第１の実施形態のフィルタ装置１における電気的接続構造を示す模式図である。第１の電子部品部１１内においては、インダクタンス部品としての第１の電子部品素子１３が備えられている。 FIG. 3 is a schematic diagram showing an electrical connection structure in the filter device 1 of the first embodiment. In the first electronic component section 11, a first electronic component element 13 as an inductance component is provided.
　また、第２の電子部品部２１内には、フィルタ素子２３が構成されている。フィルタ素子２３は、送信フィルタ２３Ａと受信フィルタ２３Ｂとを有する。このフィルタ素子２３は、アンテナ端子２３ａを有する。アンテナ端子２３ａと送信端子２３ｂとの間に送信フィルタ２３Ａが接続されている。アンテナ端子２３ａと受信端子２３ｃとの間に受信フィルタ２３Ｂが接続されている。アンテナ端子２３ａは、第１の電子部品素子１３を介してグラウンド電位に接続されている。 Further, a filter element 23 is configured in the second electronic component unit 21. The filter element 23 includes a transmission filter 23A and a reception filter 23B. The filter element 23 has an antenna terminal 23a. A transmission filter 23A is connected between the antenna terminal 23a and the transmission terminal 23b. A reception filter 23B is connected between the antenna terminal 23a and the reception terminal 23c. The antenna terminal 23 a is connected to the ground potential via the first electronic component element 13.
　他方、送信フィルタ２３Ａは、グラウンド電位に接続される端子２３ｄを有する。この端子２３ｄが、端子電極２４ｃに電気的に接続されている。他方、受信フィルタ２３Ｂも、グラウンド電位に接続される端子２３ｅを有する。この端子２３ｅが、端子電極２４ｄに接続されている。 On the other hand, the transmission filter 23A has a terminal 23d connected to the ground potential. This terminal 23d is electrically connected to the terminal electrode 24c. On the other hand, the reception filter 23B also has a terminal 23e connected to the ground potential. This terminal 23e is connected to the terminal electrode 24d.
　端子電極２４ｃ，２４ｄは、第１の電子部品部１１の第１の基板１２の第２の主面１２ｂ上において、接続配線１７ｊにより共通化されている。すなわち、端子電極１７ａ，１７ｂが接続配線１７ｊにより電気的に接続されている。 The terminal electrodes 24 c and 24 d are shared by the connection wiring 17 j on the second main surface 12 b of the first substrate 12 of the first electronic component unit 11. That is, the terminal electrodes 17a and 17b are electrically connected by the connection wiring 17j.
　従って、フィルタ装置１では、端子２３ｄと、端子２３ｅとが、第１の基板１２の第２の主面１２ｂ上において共通接続されて、グラウンド電位に接続されている。よって、送信フィルタ２３Ａと受信フィルタ２３Ｂにおいて、グラウンドが強化され、かつ両者の間の信号の回り込みが生じ難い。 Therefore, in the filter device 1, the terminal 23d and the terminal 23e are commonly connected on the second main surface 12b of the first substrate 12 and connected to the ground potential. Therefore, in the transmission filter 23A and the reception filter 23B, the ground is strengthened, and a signal wraparound between them is difficult to occur.
　なお、端子２３ｄと端子２３ｅとを、例えば第２の電子部品部２１の第２の基板２２上において共通接続し、第１の基板１２の第２の主面１２ｂ上に設けられている端子電極に接続した場合には、配線長による大きなインダクタンス分が、端子２３ｄ，２３ｅの共通接続部分とグラウンド電位との間に挿入されることになる。そのため、端子２３ｄと端子２３ｅとの間における信号の回り込みが生じやすくなり、かつグラウンドが強化され難い。 The terminal 23d and the terminal 23e are connected in common on, for example, the second substrate 22 of the second electronic component unit 21, and are terminal electrodes provided on the second main surface 12b of the first substrate 12. In the case of connection to the capacitor, a large inductance component due to the wiring length is inserted between the common connection portion of the terminals 23d and 23e and the ground potential. Therefore, a signal wraparound between the terminal 23d and the terminal 23e is likely to occur, and the ground is difficult to be strengthened.
　特に、ＰＯＰ構造では、第１の電子部品部１１において、第１の電子部品素子１３が実装されている。そのため、第１の電子部品部１１では、第１の封止樹脂層１８の厚みはかなり厚くなる。よって、上記のようなグラウンド電位との間の配線長は第１の電子部品部１１においてかなり長くなる。従って、大きなインダクタンスが共通接続点とグラウンド電位との間に挿入されることになる。 In particular, in the POP structure, the first electronic component element 13 is mounted in the first electronic component section 11. Therefore, in the first electronic component unit 11, the thickness of the first sealing resin layer 18 is considerably thick. Therefore, the wiring length between the above-described ground potentials is considerably long in the first electronic component unit 11. Therefore, a large inductance is inserted between the common connection point and the ground potential.
　これに対して、本実施形態では、共通接続は接続配線１７ｊにおいて行なわれている。すなわち、第１の電子部品部１１の第１の基板１２の第２の主面１２ｂ上において共通接続されている。従って、フィルタ装置が搭載される実装基板のグラウンド電位と共通接続部分との間に大きなインダクタンスが挿入され難い。よって、送信フィルタ２３Ａ及び受信フィルタ２３Ｂにおいてグラウンドを強化することができると共に、両者の間の信号の回り込みも生じ難い。よって、帯域外減衰量の拡大を図ることができる。これを、図４～図８を参照してより具体的に説明する。 In contrast, in the present embodiment, the common connection is made in the connection wiring 17j. That is, they are commonly connected on the second main surface 12 b of the first substrate 12 of the first electronic component unit 11. Therefore, it is difficult to insert a large inductance between the ground potential of the mounting board on which the filter device is mounted and the common connection portion. Therefore, it is possible to strengthen the ground in the transmission filter 23A and the reception filter 23B, and it is difficult for a signal to wrap around between them. Therefore, it is possible to increase the out-of-band attenuation. This will be described more specifically with reference to FIGS.
　図４は、上記送信フィルタ２３Ａ（通過帯域１９２０～１９８０ＭＨｚ）及び受信フィルタ２３Ｂ（通過帯域２１１０～２１７０Ｈｚ）の回路構成を有するＢａｎｄ１の分波装置を示す回路図である。 FIG. 4 is a circuit diagram showing a Band1 branching device having the circuit configuration of the transmission filter 23A (passband 1920-1980 MHz) and the reception filter 23B (passband 2110-2170 Hz).
　図４から明らかなように、送信フィルタ２３Ａは、複数の直列腕共振子Ｓ１～Ｓ５及び複数の並列腕共振子Ｐ１～Ｐ４を有するラダー型フィルタである。直列腕共振子Ｓ１～Ｓ５及び並列腕共振子Ｐ１～Ｐ４は、それぞれ弾性波共振子であることが好ましく、圧電基板上のＩＤＴ電極と弾性波伝搬方向においてＩＤＴ電極の両側に配置された反射器とを含む弾性表面波共振子であることがさらに好ましい。なお、送信フィルタ２３Ａは、少なくとも１つの送信フィルタ整合素子を介してグラウンド電位に接続されている。 As is clear from FIG. 4, the transmission filter 23A is a ladder type filter having a plurality of series arm resonators S1 to S5 and a plurality of parallel arm resonators P1 to P4. Each of the series arm resonators S1 to S5 and the parallel arm resonators P1 to P4 is preferably an elastic wave resonator, and the IDT electrode on the piezoelectric substrate and the reflectors disposed on both sides of the IDT electrode in the elastic wave propagation direction. More preferably, the surface acoustic wave resonator includes: The transmission filter 23A is connected to the ground potential via at least one transmission filter matching element.
　受信フィルタ２３Ｂは、縦結合共振子型弾性表面波フィルタ３１，３２を有する。受信フィルタ２３Ｂは、少なくとも１つの受信フィルタ整合素子を介してグラウンド電位に接続される。 The reception filter 23B includes longitudinally coupled resonator type surface acoustic wave filters 31 and 32. The reception filter 23B is connected to the ground potential via at least one reception filter matching element.
　なお、送信フィルタ２３Ａ及び受信フィルタ２３Ｂの回路構成は特に限定されるものではない。すなわち、他の回路構成の帯域通過型フィルタであってもよい。また、弾性表面波共振子以外の共振子を用いて帯域通過型フィルタが構成されていてもよい。 Note that the circuit configurations of the transmission filter 23A and the reception filter 23B are not particularly limited. That is, a band-pass filter having another circuit configuration may be used. Moreover, the band pass filter may be configured using a resonator other than the surface acoustic wave resonator.
　図５は、本実施形態のフィルタ装置１における送信フィルタのフィルタ特性を示し、図６は受信フィルタのフィルタ特性を示す。また、図７は、フィルタ装置１におけるアイソレーション特性を示す図である。 FIG. 5 shows the filter characteristics of the transmission filter in the filter device 1 of this embodiment, and FIG. 6 shows the filter characteristics of the reception filter. FIG. 7 is a diagram showing isolation characteristics in the filter device 1.
　以下、アンテナをＡｎｔ、送信フィルタ側をＴｘ、受信フィルタ側をＲｘと略記することもある。 Hereinafter, the antenna is sometimes referred to as Ant, the transmission filter side as Tx, and the reception filter side as Rx.
　図５～図７における破線が実施形態の結果を示す。比較例として、Ｔｘ整合素子と、その他の端子(Ａｎｔ整合素子，Ｒｘ整合素子，ＴｘＧＮＤ端子，ＲｘＧＮＤ端子)とを第２の電子部品部２１の第２の基板２２の第３の主面２２ａ上で共通接続したことを除いては、上記実施形態と同様にして構成されたフィルタ装置を用意した。この比較例の送信フィルタ及び受信フィルタのフィルタ特性を図５及び図６に実線で示す。また図７に、比較例のフィルタ装置におけるアイソレーション特性を実線で示す。 The broken lines in FIGS. 5 to 7 show the results of the embodiment. As a comparative example, the Tx matching element and other terminals (Ant matching element, Rx matching element, TxGND terminal, RxGND terminal) are arranged on the third main surface 22a of the second substrate 22 of the second electronic component unit 21. The filter device was prepared in the same manner as in the above embodiment except that they were commonly connected. The filter characteristics of the transmission filter and the reception filter of this comparative example are shown by solid lines in FIGS. FIG. 7 shows the isolation characteristic in the filter device of the comparative example by a solid line.
　図５から明らかなように、破線で示す実施形態によれば、実線で示す比較例に比べ、送信フィルタの通過帯域外である２１１０～２１７０ＭＨｚ付近における減衰量、すなわち受信フィルタの通過帯域における減衰量を大きくすることが可能とされている。また、図６から明らかなように、実施形態によれば、比較例に比べ、１９８０～２００９ＭＨｚ付近、すなわち送信フィルタの通過帯域及びその付近における減衰量を大きくすることが可能とされている。 As is clear from FIG. 5, according to the embodiment shown by the broken line, compared with the comparative example shown by the solid line, the attenuation in the vicinity of 2110 to 2170 MHz outside the pass band of the transmission filter, that is, the attenuation in the pass band of the reception filter Can be increased. As is clear from FIG. 6, according to the embodiment, it is possible to increase the attenuation in the vicinity of 1980 to 2009 MHz, that is, the pass band of the transmission filter and the vicinity thereof, as compared with the comparative example.
　さらに、図７から明らかなように、比較例に比べ実施形態によれば、送信フィルタと受信フィルタとの間のアイソレーションが改善されていることがわかる。受信フィルタの通過帯域である２１１０～２１７０ＭＨｚでは、Ｔｘ整合Ｌ（Ｔｘ整合素子）からＡｎｔ端子まで信号が伝わると、受信フィルタの通過帯域であるため、Ａｎｔ端子からの信号が損失の劣化なくＲｘ端子まで届いてしまう。そのため、送信フィルタのＲｘ帯の減衰をよくすることが、Ｒｘ帯アイソレーションを改善することと同義となる。実施形態では、Ｔｘ整合Ｌ、Ａｎｔ整合Ｌ（Ａｎｔ整合素子）及びＴｘＧＮＤ端子が共通接続された箇所からグラウンド電位までのインダクタンスが小さくなるため、Ｔｘ端子からＡｎｔ端子までグラウンド電位側の配線から回り込む信号の強度が小さくなり、結果として図５が示すように送信フィルタのＲｘ帯の減衰量がよくなる。そのため、Ｒｘ帯アイソレーションも改善することが可能とされている。実施形態では示されていないが、同様に図６が示す受信フィルタのＴｘ帯減衰を改善することでＴｘ帯アイソレーション特性を改善できる。 Further, as is clear from FIG. 7, it can be seen that the isolation between the transmission filter and the reception filter is improved according to the embodiment as compared with the comparative example. When the signal is transmitted from the Tx matching L (Tx matching element) to the Ant terminal at 2110 to 2170 MHz which is the pass band of the reception filter, the signal from the Ant terminal does not deteriorate the loss because the signal is from the reception filter pass band. Will reach. Therefore, improving the attenuation of the Rx band of the transmission filter is synonymous with improving the Rx band isolation. In the embodiment, since the inductance from the location where the Tx matching L, Ant matching L (Ant matching element) and the TxGND terminal are commonly connected to the ground potential is reduced, the signal wraps around from the ground potential side wiring from the Tx terminal to the Ant terminal. As a result, the attenuation amount of the Rx band of the transmission filter is improved as shown in FIG. Therefore, it is possible to improve Rx band isolation. Although not shown in the embodiment, the Tx band isolation characteristic can be improved by improving the Tx band attenuation of the reception filter shown in FIG.
　なお、第１の実施形態では、第１の基板１２の第２の主面１２ｂ上において、グラウンド電位に接続される端子電極１７ａ，１７ｂが共通接続されていた。図８に示す第２の実施形態のように、第１の基板１２内において、内部接続配線１７ｋにより共通接続が果たされていてもよい。すなわち、第１の基板１２内に、内部接続配線１７ｋが設けられている。この内部接続配線１７ｋは、ビアホール電極１６ｄに電気的に接続されている。ビアホール電極１６ｄは、第１の基板１２の第１の主面１２ａから第１の基板１２の内部に延ばされている。ビアホール電極１６ｄは、電極ランド１４ｄに電気的に接続されている。また、ビアホール電極１６ａが、２分割され、上方部分と下方部分との間に内部接続配線１７ｋが至っている。 In the first embodiment, the terminal electrodes 17 a and 17 b connected to the ground potential are commonly connected on the second main surface 12 b of the first substrate 12. As in the second embodiment shown in FIG. 8, common connection may be achieved in the first substrate 12 by the internal connection wiring 17k. That is, the internal connection wiring 17 k is provided in the first substrate 12. The internal connection wiring 17k is electrically connected to the via hole electrode 16d. The via hole electrode 16 d extends from the first main surface 12 a of the first substrate 12 to the inside of the first substrate 12. The via hole electrode 16d is electrically connected to the electrode land 14d. Further, the via-hole electrode 16a is divided into two, and the internal connection wiring 17k reaches between the upper part and the lower part.
　本実施形態では、内部接続配線１７ｋにより、送信フィルタ２３Ａ及び受信フィルタ２３Ｂのグラウンド電位に接続される端子が共通化されている。この場合、共通接続部分が第１の基板１２内に存在している。よって、共通接続部分とグラウンド電位との間に大きなインダクタンスが挿入され難い。従って、上記第１の実施形態と同様に、送信フィルタ２３Ａ及び受信フィルタ２３Ｂ間の信号の回り込みを抑制することができる。 In this embodiment, the terminals connected to the ground potential of the transmission filter 23A and the reception filter 23B are shared by the internal connection wiring 17k. In this case, a common connection portion exists in the first substrate 12. Therefore, it is difficult to insert a large inductance between the common connection portion and the ground potential. Therefore, similarly to the first embodiment, signal wraparound between the transmission filter 23A and the reception filter 23B can be suppressed.
　第１及び第２の実施形態から明らかなように、上述したフィルタ素子２３におけるグラウンド電位に接続される複数の端子を共通接続する部分を、第２の基板２２の第３の主面２２ａよりも第１の基板１２側の位置に設けることにより、上記共通接続部分とグラウンド電位との間に、配線長による大きなインダクタンスが挿入されることを抑制することができる。従って、上記共通接続部分は第２の基板２２の第３の主面２２ａよりも第１の基板１２側であればよい。もっとも、好ましくは、第２の基板２２内や第２の基板２２の第４の主面２２ｂ上よりも、第１の電子部品部１１側において共通接続することが望ましい。より好ましくは、第１の基板１２の第１の主面１２ａ、第１の基板１２内及び第１の基板１２の第２の主面１２ｂにおいて共通接続することが望ましく、さらに好ましくは第１の実施形態のように、第１の基板１２の第２の主面１２ｂ上において共通接続することがさらに好ましい。 As is apparent from the first and second embodiments, the portion of the filter element 23 that connects the plurality of terminals connected to the ground potential is connected to the third main surface 22a of the second substrate 22 in common. By providing at the position on the first substrate 12 side, insertion of a large inductance due to the wiring length between the common connection portion and the ground potential can be suppressed. Therefore, the common connection portion may be on the first substrate 12 side with respect to the third main surface 22 a of the second substrate 22. However, preferably, it is desirable to make a common connection on the first electronic component unit 11 side than in the second substrate 22 or on the fourth main surface 22b of the second substrate 22. More preferably, it is desirable to make a common connection in the first main surface 12a of the first substrate 12, the first substrate 12 and the second main surface 12b of the first substrate 12, more preferably the first substrate 12. As in the embodiment, it is more preferable to make a common connection on the second main surface 12b of the first substrate 12.
　なお、上述してきた実施形態では、第２の電子部品部２１は、第２の封止樹脂層２９を有していたが、第２の封止樹脂層２９を有せず、ＷＬＰ構造のフィルタ装置であってもよい。 In the embodiment described above, the second electronic component unit 21 has the second sealing resin layer 29, but does not have the second sealing resin layer 29, and has a WLP structure filter. It may be a device.
　また、フィルタ素子における、グラウンド電位に接続される複数の端子は、送信フィルタのグラウンド端子及び受信フィルタのグラウンド端子に限定されるものでもない。 Further, the plurality of terminals connected to the ground potential in the filter element are not limited to the ground terminal of the transmission filter and the ground terminal of the reception filter.
１…フィルタ装置
１１…第１の電子部品部
１２…第１の基板
１２ａ，１２ｂ…第１，第２の主面
１３…第１の電子部品素子
１４ａ～１４ｅ…電極ランド
１５ａ，１５ｂ…バンプ
１６ａ～１６ｄ…ビアホール電極
１７ａ～１７ｉ…端子電極
１７ｊ…接続配線
１７ｋ…内部接続配線
１８…第１の封止樹脂層
１９ａ～１９ｃ…ビアホール電極
１９ｄ～１９ｆ…電極ランド
２１…第２の電子部品部
２２…第２の基板
２２ａ，２２ｂ…第３，第４の主面
２３…フィルタ素子
２３Ａ…送信フィルタ
２３Ｂ…受信フィルタ
２３ａ…アンテナ端子
２３ｂ…送信端子
２３ｃ…受信端子
２３ｄ，２３ｅ…端子
２４ａ，２４ｂ…電極ランド
２４ｃ～２４ｅ…端子電極
２５ａ～２５ｃ…ビアホール電極
２６ａ～２６ｃ…電極ランド
２７ａ～２７ｃ…金属バンプ
２９…第２の封止樹脂層
３１，３２…縦結合共振子型弾性表面波フィルタ
Ｐ１～Ｐ４…並列腕共振子
Ｓ１～Ｓ５…直列腕共振子　　 DESCRIPTION OF SYMBOLS 1 ... Filter apparatus 11 ... 1st electronic component part 12 ... 1st board | substrate 12a, 12b ... 1st, 2nd main surface 13 ... 1st electronic component element 14a-14e ... Electrode land 15a, 15b ... Bump 16a 16d ... via hole electrodes 17a-17i ... terminal electrode 17j ... connection wiring 17k ... internal connection wiring 18 ... first sealing resin layers 19a-19c ... via hole electrodes 19d-19f ... electrode land 21 ... second electronic component part 22 ... 2nd board | substrate 22a, 22b ... 3rd, 4th main surface 23 ... Filter element 23A ... Transmission filter 23B ... Reception filter 23a ... Antenna terminal 23b ... Transmission terminal 23c ... Reception terminal 23d, 23e ... Terminal 24a, 24b ... Electrode lands 24c to 24e... Terminal electrodes 25a to 25c... Via hole electrodes 26a to 26c... Electrode lands 27a to 27c. The sealing resin layer 31, 32 longitudinally coupled resonator surface acoustic wave filters P1 ~ P4 ... parallel arm resonators S1 ~ S5 ... series arm resonator

Claims (8)

  1. 　対向し合う第１及び第２の主面を有する第１の基板と、前記第１の基板の前記第１の主面上に実装されている第１の電子部品素子と、
    　前記第１の基板の前記第１の主面上に設けられており、前記第１の電子部品素子の周囲に設けられた第１の封止樹脂層とを有する、第１の電子部品部と、
    　対向し合う第３及び第４の主面を有し、前記第４の主面が前記第１の電子部品部の前記第１の封止樹脂層上に位置するように、前記第１の封止樹脂層上に積層された第２の基板と、前記第２の基板上に実装もしくは構成されている第２の電子部品素子としてのフィルタ素子と、前記フィルタ素子を封止している封止構造とを有する第２の電子部品部と、を備え、
    　前記フィルタ素子が、グラウンド電位に接続される複数の端子を有し、該複数の端子が、前記第２の基板の前記第３の主面よりも前記第１の電子部品部側の位置において共通化されている、フィルタ装置。     A first substrate having first and second main surfaces facing each other; a first electronic component element mounted on the first main surface of the first substrate;
    A first electronic component part provided on the first main surface of the first substrate and having a first sealing resin layer provided around the first electronic component element; ,
    The first sealing has a third main surface and a fourth main surface facing each other, and the fourth main surface is positioned on the first sealing resin layer of the first electronic component part. A second substrate laminated on the stop resin layer, a filter element as a second electronic component element mounted or configured on the second substrate, and a seal that seals the filter element A second electronic component part having a structure,
    The filter element has a plurality of terminals connected to a ground potential, and the plurality of terminals are common at a position closer to the first electronic component part than the third main surface of the second substrate. The filter device.
  2. 　前記複数の端子が、前記第１の基板の前記第１の主面、前記第１の基板の前記第１及び第２の主面間の位置または前記第１の基板の前記第２の主面で共通化されている、請求項１に記載のフィルタ装置。 The plurality of terminals are the first main surface of the first substrate, the position between the first and second main surfaces of the first substrate, or the second main surface of the first substrate. The filter device according to claim 1, wherein the filter device is used in common.
  3. 　前記複数の端子が、前記第２の基板の前記第３の主面よりも前記第４の主面側において共通化されている、請求項１に記載のフィルタ装置。 The filter device according to claim 1, wherein the plurality of terminals are shared on the fourth main surface side with respect to the third main surface of the second substrate.
  4. 　前記複数の端子に電気的に接続されている複数の接続電極をさらに備え、該複数の接続電極が、前記第１の基板の前記第１の主面上に設けられている前記第１の封止樹脂層に至っている、請求項１または２に記載のフィルタ装置。 A plurality of connection electrodes electrically connected to the plurality of terminals, wherein the plurality of connection electrodes are provided on the first main surface of the first substrate; The filter device according to claim 1, wherein the filter device reaches the stop resin layer.
  5. 　前記複数の接続電極が、前記第１の封止樹脂層を貫くビアホール電極部をそれぞれ有する、請求項４に記載のフィルタ装置。 The filter device according to claim 4, wherein each of the plurality of connection electrodes has a via-hole electrode portion that penetrates the first sealing resin layer.
  6. 　前記フィルタ素子が、送信フィルタと受信フィルタとを有し、前記複数の端子のうち少なくとも１つの端子が、前記受信フィルタのグラウンド端子であり、前記複数の端子のうちの残りの少なくとも１つの端子が、前記送信フィルタのグラウンド端子である、請求項１～５のいずれか１項に記載のフィルタ装置。 The filter element includes a transmission filter and a reception filter, at least one terminal of the plurality of terminals is a ground terminal of the reception filter, and at least one remaining terminal of the plurality of terminals is 6. The filter device according to claim 1, wherein the filter device is a ground terminal of the transmission filter.
  7. 　前記第２の電子部品部の前記封止構造が、封止樹脂層である、請求項１～６のいずれか１項に記載のフィルタ装置。 The filter device according to any one of claims 1 to 6, wherein the sealing structure of the second electronic component part is a sealing resin layer.
  8. 　前記第２の電子部品部の前記封止構造が、前記第２の基板上に設けられており、開口部を有する支持層と、前記支持層の前記開口部を覆うように設けられた蓋材とを有する、請求項１～７のいずれか１項に記載のフィルタ装置。 The sealing structure of the second electronic component part is provided on the second substrate, and has a support layer having an opening, and a lid provided so as to cover the opening of the support layer The filter device according to any one of claims 1 to 7, comprising:
PCT/JP2016/059613 2015-05-26 2016-03-25 Filter device WO2016189951A1 (en)

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