WO2016167339A1 - 露光システム - Google Patents
露光システム Download PDFInfo
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- WO2016167339A1 WO2016167339A1 PCT/JP2016/062089 JP2016062089W WO2016167339A1 WO 2016167339 A1 WO2016167339 A1 WO 2016167339A1 JP 2016062089 W JP2016062089 W JP 2016062089W WO 2016167339 A1 WO2016167339 A1 WO 2016167339A1
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- chamber
- exposure
- shuttle
- exposure system
- measurement
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Images
Classifications
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/16—Vessels; Containers
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
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- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Definitions
- the present invention relates to an exposure system, and more particularly to an exposure system that is partially connected to a substrate processing apparatus that applies a sensitive agent to a target and exposes a target coated with the sensitive agent with a charged particle beam.
- an exposure apparatus (hereinafter referred to as an ultraviolet light exposure apparatus) that is used in a lithography process for manufacturing electronic devices (microdevices) such as semiconductor elements and uses ultraviolet light from the far ultraviolet region to the vacuum ultraviolet region as an exposure beam.
- an ultraviolet light exposure apparatus that is used in a lithography process for manufacturing electronic devices (microdevices) such as semiconductor elements and uses ultraviolet light from the far ultraviolet region to the vacuum ultraviolet region as an exposure beam.
- the exposure wavelength has been shortened, the illumination conditions have been optimized, and the immersion method has been applied to further increase the numerical aperture of the projection optical system.
- the electron beam exposure apparatus includes various control units for evacuating the interior of the chamber, the footprint is larger than that of the ultraviolet light exposure apparatus. Also, when installing an electron beam exposure device in a clean room of a semiconductor factory, it is necessary to consider the use efficiency of the space in the clean room because it is arranged side by side with the coater / developer, just like the ultraviolet light exposure device. is there.
- an exposure system that exposes a target with a charged particle beam, the first chamber disposed adjacent to a substrate processing apparatus that applies a sensitive material to the target, and the first A first chamber and the substrate processing apparatus, which are spaced apart from each other in a second direction intersecting the first direction, and each of the second chamber and the substrate processing apparatus;
- a first control rack disposed adjacent to or in close proximity to and connected to an external utility supply, wherein the first control rack transfers the utility supplied from the utility supply to the first chamber and the A first exposure system is provided for dispensing to each of the second chambers.
- an exposure system that exposes a target coated with a sensitive agent with a charged particle beam
- the stage device including a stage that is movable while holding the target, and the target
- An exposure unit having a charged particle beam irradiation apparatus that irradiates and exposes a charged particle beam; a vacuum chamber that houses at least a part of the exposure unit; and provided in at least one of a side wall and a ceiling wall of the vacuum chamber,
- a second exposure system including an attachment member to which a supply member for supplying a utility supplied from an external utility supply source is attached to the charged particle beam irradiation apparatus is provided.
- FIG. 1 is a perspective view showing an exposure system according to an embodiment together with a resist coating / developing apparatus as viewed from an angle different from FIG.
- FIG. 2B is a perspective view of FIG. 1 is a perspective view showing an exposure system according to an embodiment together with a resist coating / developing apparatus as viewed from an angle different from FIG.
- FIG. 1 is a perspective view showing an exposure system according to an embodiment together with a resist coating / developing apparatus as viewed from an angle different from FIG.
- FIG. 7 It is a figure which shows schematically the load lock chamber with which a vacuum chamber is provided with the exposure unit accommodated in the exposure chamber inside the vacuum chamber. It is a perspective view which shows an exposure unit. It is a perspective view which shows the state by which the wafer shuttle was mounted
- FIGS. 12A and 12B are views (No. 1 and No. 2) for explaining the configuration of the first measurement system.
- 13A is a diagram for explaining the configuration of each part in the measurement chamber
- FIG. 13B is a diagram for explaining the movable range in the vertical direction of the measurement table in FIG. 13A. is there.
- It is a block diagram which shows the structure of the control system of an exposure system.
- It is a block diagram which shows the input / output relationship of the measurement control apparatus which comprises the control system of FIG.
- FIG. 1 shows the input / output relationship of the exposure control apparatus which comprises the control system of FIG.
- FIG. 17A is a flowchart for explaining an example of the preparatory work performed in the measurement chamber 60
- FIG. 17B is a diagram for explaining the unloading operation of the exposed wafer in the measurement chamber 60. It is a flowchart of. It is FIG. (1) for demonstrating the exchange operation
- FIG. 10 is a diagram (No. 2) for explaining the wafer replacement operation integrally with the wafer shuttle.
- FIG. 10 is a third diagram for explaining the wafer replacement operation integrated with the wafer shuttle;
- FIG. 11 is a diagram (No. 4) for explaining the wafer replacement operation integrally with the wafer shuttle.
- FIG. 11 is a diagram (No. 5) for explaining the wafer replacement operation integrally with the wafer shuttle.
- FIG. 10 is a diagram (No. 2) for explaining the wafer replacement operation integrally with the wafer shuttle.
- FIG. 11 is a diagram (No. 5) for explaining the wafer replacement operation integrally with the wafer
- FIG. 6 is a diagram (No. 6) for explaining the wafer replacement operation integrally with the wafer shuttle.
- FIG. 10 is a view (No. 7) for explaining the wafer replacement operation integrally with the wafer shuttle.
- FIG. 10 is a view (No. 8) for explaining the wafer exchange operation integrally with the wafer shuttle.
- FIG. 10 is a diagram (No. 9) for explaining the wafer replacement operation integrally with the wafer shuttle.
- It is a figure for demonstrating the exposure system which concerns on a 1st modification.
- FIGS. 1 to 2B show an exposure system 1000 according to one embodiment together with a resist coating / developing apparatus (coater / developer (hereinafter abbreviated as C / D)) 9000 as seen from different directions. Each is shown in the figure.
- FIG. 3 shows the exposure system 1000 together with the C / D 9000 in a plan view.
- a configuration using an electron beam will be described as an example of a charged particle beam.
- the charged particle beam is not limited to an electron beam, and a beam using charged particles such as an ion beam may be used.
- a plane that takes the Z axis parallel to the optical axis of each electron beam optical system and is perpendicular to the Z axis (this embodiment)
- the Y axis and the X axis that are orthogonal to each other are taken in the plane parallel to the floor surface F).
- the exposure system 1000 is a rectangular parallelepiped first arranged at a predetermined interval on the ⁇ Y side so as to face a rectangular parallelepiped C / D 9000 installed on the floor surface F.
- One control rack 200 a plurality of, for example, six chambers 300 1 to 300 6 disposed on the + X side of the C / D 9000 and the first control rack 200, and a space 4 in which six chambers 300 1 to 300 6 are disposed
- a frame 400 having four legs located at one corner, and a second control rack 500 disposed on the frame 400 are provided.
- the six chambers 300 1 to 300 6 are divided into two rows composed of three chambers 300 1 to 300 3 and three chambers 300 4 to 300 6 .
- the three chambers 300 1 to 300 3 are arranged at a predetermined interval in the X-axis direction (a direction in which a chamber 300 1 and C / D 9000 described later are adjacent to each other), and 3 shown in FIG.
- the two chambers 300 4 to 300 6 are arranged at a predetermined interval in the X-axis direction (a direction in which a chamber 300 4 described later and the first control rack 200 are adjacent to each other).
- the chambers 300 1 to 300 3 shown in FIG. 1 are included in one row, and the chambers 300 4 to 300 6 shown in FIG. 2A are included in the other row.
- the chambers 300 1 to 300 3 in one row are arranged side by side in the X-axis direction adjacent to the + X side of the C / D 9000.
- the other row of chambers 300 4 to 300 6 is arranged adjacent to the + X side of the first control rack 200 and aligned in the X-axis direction.
- first control rack 200 as can be seen from FIGS. 4 and 3 shows a partial removal of the frame 400 and the second control rack 500, the chamber 300 1 and 300 4 faces , chamber 300 2 300 5 faces, the chamber 300 3 and the chamber 300 6 faces.
- the chamber 300 1 is arranged adjacent to the C / D 9000 in the direction in which the C / D 9000 extends.
- the chamber 300 4 is in a direction intersecting the direction in which the chamber 300 1 and the C / D 9000 are adjacent to each other and at a predetermined interval from the chamber 300 1 . Be placed. That is, the chamber 300 4 and the chamber 300 1, disposed opposite.
- the first control rack 200 is arranged in the chamber 300 4 and C / D9000 at a predetermined distance. That is, the chamber 300 4, to the first control rack 200 is disposed adjacent to the direction in which the first control rack 200 extends, C / D9000 is disposed opposite to the first control rack 200.
- the first control rack 200 As the first control rack 200, a rectangular parallelepiped having the same length and the same height as the C / D 9000 is used.
- the second control rack 500 is arranged via the frame 400 in order to effectively use this empty space. That is, the frame 400 has a rectangular top plate portion and four leg portions of the same length that support the top plate portion at its four corner portions, and supports the second control rack 500 from below. ing.
- the upper surface of the second control rack 500 and the upper surfaces of the first control rack 200 and the C / D 9000 are substantially the same surface.
- a rectangular parallelepiped space can be created in the clean room, and it is possible to avoid the occurrence of unusable space in the clean room and to improve the efficiency of use of the space. It is.
- the first control rack 200 To the first control rack 200, wiring and piping from the utility supply source of the clean room subfab that contains the production support equipment and utility facilities below the floor F are connected from below through the floor F. (Refer to the three black arrows pointing upward in FIG. 2A).
- the first control rack 200 is connected to the second control rack 500 via wiring and piping.
- the wiring and piping supply utilities such as electric power, and the utilities include air, cooling water, vacuum exhaust and the like in addition to electric power.
- the first control rack 200 Inside the first control rack 200, there are various types such as a control system unit directly related to an electron beam exposure apparatus such as a high voltage power supply and an amplifier, a stage control system described later, and a measurement control board described later.
- the unit is stored.
- the first control rack 200 temporarily relays the wiring and piping, and distributes the utility supplied from the utility supply source of the clean room subfab via the wiring and piping (supply member) to the six chambers 300 1 to 300 6. (Refer to the white arrow in FIG. 2 (A)), it is supplied to the second control rack 500.
- the second control rack 500 supplies the utility supplied from the first control rack 200 from above to each of the six chambers 300 1 to 300 6 (three downward black lines in FIG. 2A). See arrow). That is, the second control rack 500 functions as an interface between the first control rack 200 and the six chambers 300 1 to 300 6 .
- the merit of supplying the utility from above to each of the six chambers 300 1 to 300 6 will be described later.
- Chamber 300 1 is connected by line to the C / D9000.
- the inner space of the chamber 3001, the wafer predetermined measurement with respect to (C / D9000 wafer electron beam resist is applied by), and unloading of the load and exposed wafer of the wafer before exposure to wafer shuttle to be described later is the target A measurement chamber (measurement cell) 60 (not shown in FIGS. 1 to 2B, etc., see FIG. 13A) is loaded.
- the exposure chamber 301 i is maintained in a high vacuum state. That is, as the five chambers 300 i in which the exposure chambers 301 i are formed, vacuum chambers having a structure with sufficient resistance so as not to be crushed or deformed by the action of atmospheric pressure are used. .
- the chamber 300 2-300 6 denoted both vacuum chamber 300 2-300 6.
- the internal space of the chamber 300 1 has extremely measuring chamber as described above, there is no need to vacuum atmosphere as the interior space of the chamber 300 2-300 6. Therefore, as the chamber 300 1, it is possible to use a weak chamber strength than the vacuum chamber. Further, by controlling the pressure of the inner space of the inner space and C / D9000 chamber 300 1 to be higher than pressure of the clean room, a gas in a clean room (air) entering the chamber 300 1 and C / D9000 Can be suppressed.
- Each of the internal space of the first control rack 200 and the internal space of the second control rack 500 may be set to the same pressure as the clean room (atmospheric pressure space) or a pressure higher than the clean room air pressure.
- FIG. 5 shows the same orientation as the vacuum chambers 300 3 and 300 2 , but the vacuum chambers 300 6 , 300 5 , and 300 4 are symmetrical with respect to those shown in FIG. Have the same configuration.
- Each load lock chamber 302 is fixed to a main body 302a in which a load lock chamber 304 (see, for example, FIG. 19) is formed, and to the front side (atmosphere side) and back side (vacuum side) of the main body 302a.
- a pair of gate portions 302b and 302c is included.
- the pair of gate portions 302b and 302c is provided with a gate valve that includes a shutter that opens and closes an opening formed on the front surface side and the back surface side of the main body portion 302a and a drive mechanism that slides the shutter in the vertical direction.
- gate valves 302b and 302c are denoted by the same reference numerals as those of the gate portion. Opening and closing of the gate valves 302b and 302c (that is, opening and closing of the shutter by the driving mechanism) is controlled by the exposure control device 380 i (see FIGS. 14 and 16).
- a vacuum pipe connected to a vacuum source such as a vacuum pump via an opening / closing valve 305 is connected to the load lock chamber 302.
- a vacuum source such as a vacuum pump via an opening / closing valve 305
- the inside of the load lock chamber 304 is connected. Is evacuated as necessary.
- the opening / closing of the on-off valve 305 is also controlled by the exposure control device 380 i .
- Each load lock chamber 302 may be provided with a vacuum pump.
- a pair of the exposure unit 310 shown in FIG. 5, for example, a horizontal multi-joint consists of a robot exposure chamber transport system 312 (not shown in FIG. 5, see FIG. 16) Contained.
- a shuttle that has two upper and lower storage shelves separated by a first distance and can move up and down is provided.
- a carrier 306 is provided. The vertical movement of the shuttle carrier 306 is controlled by the exposure control device 380 i (see FIG. 16).
- the exposure unit 310 includes a stage device 320 and an electron beam irradiation device 330, as shown in a simplified manner in FIG.
- the electron beam irradiation apparatus 330 includes a cylindrical lens barrel 331 shown in FIG. 6 and an electron beam optical system inside the lens barrel 331.
- the stage device 320 includes a coarse / fine movement stage on which a wafer shuttle that can hold and move a wafer is detachably mounted.
- the electron beam irradiation device 330 is held by a wafer shuttle mounted on the coarse / fine movement stage. The wafer is exposed by irradiating it with an electron beam.
- the wafer shuttle is a holding member (or table) that holds the wafer by electrostatic chucking, as will be described in detail later.
- the holding member is transported while the holding member holds the wafer, and
- This holding member is referred to as a wafer shuttle because it repeatedly moves back and forth like the shuttle bus (or space shuttle) from the exposure chamber 301 2 to 30 16 starting from the measurement chamber 60.
- the stage device 320 measures the position information of the surface plate 321, the coarse / fine movement stage 322 that moves on the surface plate 321, the drive system that drives the coarse / fine movement stage 322, and the coarse / fine movement stage. A position measuring system. Details of the configuration and the like of the stage device 320 will be described later.
- the lens barrel 331 of the electron beam irradiation device 330 is lowered by a metrology frame 340 formed of an annular plate member having three convex portions formed at intervals of a central angle of 120 degrees on the outer peripheral portion. It is supported from. More specifically, the lowermost end portion of the lens barrel 331 is a small-diameter portion whose diameter is smaller than that of the upper portion thereof, and a boundary portion between the small-diameter portion and the upper portion is a stepped portion. Yes.
- the lens barrel 331 is moved from below by the metrology frame 340. It is supported.
- the metrology frame 340 has three suspension support mechanisms 350 a, 350 b, and 350 c (flexible structure connecting members) each having a lower end connected to each of the three convex portions described above, the top plate of the vacuum chamber 300 i partitioning the exposure chamber 301 i is supported in a suspended state from (ceiling wall). That is, in this way, the electron beam irradiation apparatus 330 is supported by being suspended from the vacuum chamber 300 i at three points.
- the three suspension support mechanisms 350a, 350b, 350c are, as representatively shown for the suspension support mechanism 350a in FIG. 6, a passive vibration isolation pad 351 provided at each upper end, and a vibration isolation pad.
- (Anti-Vibration Unit) 351 has a wire 352 made of a steel material having one end connected to the lower end of 351 and the other end connected to a metrology frame 340.
- the anti-vibration pad 351 is fixed to the top plate of the vacuum chamber 300 i and includes an air damper or a coil spring, respectively.
- the vibration isolation pad 351 In the present embodiment, among vibrations such as floor vibration transmitted from the outside to the vacuum chamber 300 i , most of vibration components in the Z-axis direction parallel to the optical axis of the electron beam optical system are absorbed by the vibration isolation pad 351. Therefore, high vibration isolation performance can be obtained in a direction parallel to the optical axis of the electron beam optical system.
- the natural frequency of the suspension support mechanism is lower in the direction perpendicular to the optical axis than in the direction parallel to the optical axis of the electron beam optical system.
- Three suspension support mechanisms 350a, 350b, the floor 350c is in a direction perpendicular to the optical axis to oscillate like a pendulum, which is transmitted from the outside to the vibration isolation performance (vacuum chamber 300 i in the direction perpendicular to the optical axis
- the length of the three suspension support mechanisms 350a, 350b, 350c (the length of the wire 352) is sufficiently long so that the vibration (such as vibration) is sufficiently high). It is set.
- the relative position between the electron beam irradiation device 330 and the vacuum chamber 300 i may change at a relatively low frequency.
- the positioning device 353 of the non-contact type (not shown in FIG. 5, see FIG. 16) is provided.
- the positioning device 353 can be configured to include a six-axis acceleration sensor and a six-axis actuator, as disclosed in, for example, International Publication No. 2007/077920.
- the positioning device 353 is controlled by the exposure control device 380 i (see FIG. 16).
- the relative positions of the electron beam irradiation device 330 in the X-axis direction, the Y-axis direction, and the Z-axis direction with respect to the vacuum chamber 300 i and the relative rotation angles around the X-axis, Y-axis, and Z-axis are constant ( (Predetermined state).
- the electron beam irradiation apparatus 330 includes an electron beam optical system including m (m is 100, for example) optical system columns arranged in a predetermined positional relationship within the lens barrel 331.
- Each optical system column is composed of a multi-beam optical system that can irradiate n beams (n is, for example, 4000) that can be individually turned on and off and can be deflected.
- the multi-beam optical system for example, an optical system having the same configuration as the optical system disclosed in Japanese Patent Application Laid-Open No. 2011-258842, International Publication No. 2007/017255, or the like can be used.
- the 100 optical system columns correspond to, for example, approximately 100 shot areas formed on a 300 mm wafer (or formed from a shot map in accordance with a shot map) at a ratio of 1: 1.
- 100 shot areas on the wafer are exposed by arranging the pattern within the area and turning on / off while deflecting the circular spots of the multiple electron beams while scanning the wafer with respect to the exposure area. Is formed.
- Each optical system column includes a backscattered electron detection system (not shown) that detects backscattered electrons as in a normal electron beam optical system.
- the electron beam irradiation device 330 is controlled by an exposure control device 380 i (see FIG. 16).
- FIG. 7 is a perspective view showing a state where a wafer shuttle (hereinafter abbreviated as shuttle) 10 is mounted on the coarse / fine movement stage 322 of the stage device 320.
- FIG. 8 is a perspective view of the coarse / fine movement stage 322 shown in FIG. 7 in a state in which the shuttle 10 is detached (removed).
- the surface plate 321 provided in the stage device 320 is actually installed on the bottom wall of the vacuum chamber 300 i that partitions the exposure chamber 301 i .
- the coarse / fine movement stage 322 includes a pair of quadrangular columnar portions that are arranged at predetermined intervals in the Y-axis direction and extend in the X-axis direction.
- a fine movement stage 322b the pair of square columnar portions of the coarse movement stage 322a are actually connected by a connecting member (not shown) in a state that does not prevent the movement of the fine movement stage 322b in the Y-axis direction, It is integrated.
- the coarse movement stage 322a is driven with a predetermined stroke (for example, 50 mm) in the X-axis direction by a coarse movement stage drive system 323 (see FIG. 16) (see the long arrow in the X-axis direction in FIG. 10).
- the coarse movement stage drive system 323 is configured by a uniaxial drive mechanism that does not cause magnetic flux leakage, for example, a feed screw mechanism using a ball screw.
- the coarse movement stage drive system 323 is disposed between one square columnar portion and the surface plate 321 of the pair of square columnar portions of the coarse movement stage.
- a screw shaft is attached to the surface plate 321 and a ball (nut) is attached to one quadrangular columnar portion.
- bowl to the surface plate 321 and attaches a screw shaft to one square pillar-shaped part may be sufficient.
- the other quadrangular columnar portion is configured to move along a guide surface (not shown) provided on the surface plate 321.
- the screw shaft of the ball screw is driven to rotate by a stepping motor.
- the coarse movement stage drive system 323 may be configured by a uniaxial drive mechanism including an ultrasonic motor as a drive source. In any case, the magnetic field fluctuation caused by the magnetic flux leakage does not affect the positioning of the electron beam.
- the coarse movement stage drive system 323 is controlled by the exposure control device 380 i (see FIG. 16).
- the fine movement stage 322 b is formed of a member having an XZ cross-sectional rectangular frame shape penetrating in the Y-axis direction. It is supported movably. A plurality of reinforcing ribs are provided on the outer surface of the side wall of fine movement stage 322b. The configuration of the weight cancellation device 324 will be described later.
- a yoke 325a having an XZ cross section in a rectangular frame shape and extending in the Y-axis direction, and a pair of magnet units 325b fixed to the upper and lower opposing surfaces of yoke 325a.
- a mover 325 of a motor that drives fine movement stage 322b is configured by 325a and a pair of magnet units 325b.
- FIG. 10 shows a state in which a magnetic shield member (to be described later) indicated by the fine movement stage 322b and the reference numeral 328 is removed from the pair of rectangular column parts of the coarse movement stage 322a from FIG.
- a stator 326 made of a coil unit is installed.
- the stator 326 and the above-described mover 325 can move the mover 325 with respect to the stator 326 with a predetermined stroke, for example, 50 mm in the Y-axis direction, as indicated by arrows in each direction in FIG.
- a closed magnetic field type and moving magnet type motor 327 that can be finely driven in the X axis direction, the Z axis direction, the ⁇ x direction, the ⁇ y direction, and the ⁇ z direction is configured.
- a fine movement stage drive system that drives the fine movement stage in the direction of six degrees of freedom by the motor 327 is configured.
- the fine movement stage drive system is referred to as a fine movement stage drive system 327 using the same reference numerals as those of the motor.
- Fine movement stage drive system 327 is controlled by exposure control device 380 i (see FIG. 16).
- the XZ cross-section reverse U in a state of covering the upper surface of the motor 327 and both side surfaces in the X-axis direction.
- a letter-shaped magnetic shield member 328 is installed.
- the magnetic shield member 328 is formed to extend in a direction (Y-axis direction) intersecting the direction in which the quadrangular prism portion extends, and on the upper surface of the motor 327 in a non-contact manner and on the side surface of the motor 327. And a side portion that faces each other in a non-contact manner.
- the magnetic shield member 328 is inserted into the hollow portion of the fine movement stage 322b, and the lower surface of both end portions in the longitudinal direction (Y-axis direction) of the side surface portions is the upper surface of the pair of square pillar portions of the coarse movement stage 322a. It is fixed to. Further, of the side surfaces of the magnetic shield member 328, the surfaces other than the lower surfaces of the both end portions are opposed to the bottom wall surface (lower surface) of the inner wall surface of the fine movement stage 322b in a non-contact manner. That is, the magnetic shield member 328 is inserted into the hollow portion of the fine movement stage 322b without hindering the movement of the mover 325 relative to the stator 326.
- the magnetic shield member 328 a laminated magnetic shield member composed of a plurality of layers of magnetic material films laminated with a predetermined gap (space) is used.
- a magnetic shield member having a configuration in which films of two kinds of materials having different magnetic permeability are alternately laminated may be used. Since the magnetic shield member 328 covers the upper surface and side surfaces of the motor 327 over the entire length of the moving stroke of the mover 325 and is fixed to the coarse movement stage 322a, the fine movement stage 322b and the coarse movement stage 322a Leakage of magnetic flux upward (on the electron beam optical system side) can be prevented almost certainly over the entire moving range.
- the weight cancellation device 324 includes a metal bellows type air spring (hereinafter abbreviated as “air spring”) 382 having an upper end connected to the lower surface of the fine movement stage 322 b, and a lower end of the air spring 382. And a base slider 386 made of a flat plate member connected thereto.
- the air spring 382 and the base slider 386 are connected to each other via a plate-like connection member 384 having an opening at the center.
- the base slider 386 is provided with a bearing portion 386a for blowing air inside the air spring 382 to the upper surface of the surface plate 321 below the air spring 382, and a bearing surface for the pressurized air ejected from the bearing portion 386a and the surface plate.
- the base slider 386, the weight cancellation device 324, the fine movement stage 322b, and the mover 325 (as will be described later, when the shuttle is mounted on the coarse / fine movement stage 322) due to the static pressure (pressure in the gap) between the upper surface and the upper surface 321 , Including the shuttle 10 and the like).
- compressed air is supplied to the air spring 382 via a pipe (not shown) connected to the fine movement stage 322b.
- An annular recess 386b is formed around the bearing portion 386a on the surface (lower surface) of the base slider 386 that faces the platen 321.
- the platen 321 is fixed to the recess 386b from the bearing portion 386a.
- An exhaust path 321a for evacuating the air blown into the space defined by the upper surface of the board 321 to the outside is formed.
- the recess 386b of the base slider 386 is maintained so that the exhaust port of the exhaust path 321a faces the recess 386b regardless of where the fine movement stage 322b moves on the surface plate 321 within the movable range in the XY plane.
- a pair of pillars 388 are fixed to the lower surface of the fine movement stage 322b with an air spring 382 interposed therebetween.
- the pair of struts 388 are arranged symmetrically on both sides in the X-axis direction of the air spring 382 and centered on the air spring 382, and the length in the Z-axis direction is slightly longer than that of the air spring 382.
- the other ends of a pair of leaf springs 390 having a U-shape in plan view, each having one end connected to the lower end surface of the air spring 382, are connected to the lower ends of the pair of support columns 388, respectively.
- the pair of leaf springs 390 has U-shaped tip portions (portions separated into two portions) connected to the air spring 382 and opposite end portions connected to the pair of support columns 388, respectively.
- the pair of leaf springs 390 and the base slider 386 are substantially parallel, and a predetermined gap is formed between them.
- the pair of leaf springs 390 can receive the horizontal force acting on the base slider 386 when the fine movement stage 322b moves in the XY plane, it is not necessary when the fine movement stage 322b moves in the XY plane. It is possible to almost certainly prevent a large force from acting on the air spring 382.
- the pair of leaf springs 390 are deformed to allow the tilt when the fine movement stage 322b is driven to tilt.
- three triangular pyramid groove members 12 are provided on the upper surface of fine movement stage 322b.
- the triangular pyramidal groove member 12 is provided at the positions of three apexes of a regular triangle in plan view.
- the triangular pyramid groove member 12 can be engaged with a sphere or hemisphere provided in the shuttle 10 described later, and constitutes a kinematic coupling together with the sphere or hemisphere.
- FIG. 8 shows a triangular pyramid groove member 12 such as a petal composed of three plate members.
- the triangular pyramid groove member 12 is a triangular pyramid that makes point contact with a sphere or a hemisphere, respectively. Since it has the same role as the groove, it is called a triangular pyramid groove member. Therefore, a single member in which a triangular pyramid groove is formed may be used instead of the triangular pyramid groove member 12.
- three spheres or hemispheres (balls in the present embodiment) 14 are provided in the shuttle 10 corresponding to the three triangular pyramid groove members 12 as shown in FIG.
- the shuttle 10 is formed in a hexagonal shape in which each vertex of an equilateral triangle is cut off in plan view. More specifically, the shuttle 10 has notches 10a, 10b, and 10c formed at the center of each of the three oblique sides in plan view, and covers the notches 10a, 10b, and 10c from the outside.
- the leaf springs 16 are respectively attached. Balls 14 are fixed to the center of each leaf spring 16 in the longitudinal direction.
- each ball 14 In a state before being engaged with the triangular pyramid groove member 12, each ball 14, when subjected to an external force, has a radial direction centered on the center of the shuttle 10 (substantially coincides with the center of the wafer W shown in FIG. 7). Only move to a minute.
- each of the three balls 14 is lowered by moving the shuttle 10 down.
- the shuttle 10 is mounted on the fine movement stage 322b by individually engaging with the three triangular pyramid groove members 12. Even when the position of the shuttle 10 with respect to the fine movement stage 322b is deviated from a desired position at the time of mounting, when the ball 14 is engaged with the triangular pyramid groove member 12, an external force is received from the triangular pyramid groove member 12 to As a result of the radial movement, the three balls 14 always engage with the corresponding triangular pyramidal groove members 12 in the same state.
- the shuttle 10 can be easily detached (detached) from the fine movement stage 322b only by moving the shuttle 10 upward and releasing the engagement between the ball 14 and the triangular pyramid groove member 12.
- a kinematic coupling is constituted by the set of three balls 14 and the triangular pyramid groove member 12, and the kinematic coupling ensures that the mounting state of the shuttle 10 with respect to the fine movement stage 322b is always substantially the same. It can be set to the state. Therefore, no matter how many times it is removed, the shuttle 10 can be moved slightly together with the shuttle 10 only by mounting the shuttle 10 on the fine movement stage 322b via the kinematic coupling (the set of three balls 14 and the triangular pyramid groove member 12). A certain positional relationship with the stage 322b can be reproduced.
- a circular concave portion having a diameter slightly larger than that of the wafer W is formed at the center, and an electrostatic chuck (not shown) is provided in the concave portion.
- the wafer W is electrostatically attracted and held by the chuck.
- the surface of the wafer W is substantially flush with the upper surface of the shuttle 10.
- the shuttle 10 is formed with a plurality of circular openings (not shown) penetrating vertically on the mounting surface (suction surface) of the wafer W in a predetermined positional relationship.
- This position measurement system measures the position information of the shuttle 10 in a state where the shuttle 10 is mounted on the fine movement stage 322b via the kinematic coupling described above.
- This position meter includes a first measurement system 20 that measures position information of the fine movement stage 322b on which the shuttle 10 is mounted, and a second measurement system 25 that directly measures position information of the fine movement stage 322b (see FIG. 16). ).
- Grating plates 22a, 22b, and 22c are provided in the vicinity of the three sides of the shuttle 10 except for the three oblique sides, as shown in FIG.
- Each of the grating plates 22a, 22b, and 22c has a periodic direction in each of a radial direction centered on the center of the shuttle 10 (which coincides with the center of the circular concave portion in this embodiment) and a direction orthogonal thereto.
- a dimensional lattice is formed.
- the grating plate 22a is formed with a two-dimensional grating having a periodic direction in the Y-axis direction and the X-axis direction.
- the grating plate 22b is formed with a two-dimensional grating having a direction that is ⁇ 120 degrees with respect to the Y axis with respect to the center of the shuttle 10 (hereinafter referred to as ⁇ direction) and a direction perpendicular thereto as a periodic direction.
- the grating plate 22c is formed with a two-dimensional lattice having a direction that is +120 degrees with respect to the Y axis with respect to the center of the shuttle 10 (hereinafter referred to as a ⁇ direction) and a direction perpendicular thereto as a periodic direction.
- a reflection type diffraction grating having a pitch of, for example, 1 ⁇ m is used in each periodic direction.
- the lower surface (the surface on the ⁇ Z side) of the metrology frame 340 has three grating plates 22a, 22b, and 22c.
- Three head portions 24a, 24b, and 24c are fixed at positions that can individually face each of the head portions 24a, 24b, and 24c.
- Each of the three head portions 24a, 24b, and 24c is provided with a 4-axis encoder head having measurement axes indicated by four arrows in FIG. 12B.
- the head portion 24a includes a first head housed in the same housing and having a measurement direction in the X-axis direction and the Z-axis direction, and a measurement direction in the Y-axis direction and the Z-axis direction. And a second head.
- the first head (more precisely, the irradiation point on the grating plate 22a of the measurement beam emitted by the first head) and the second head (more precisely, the irradiation of the measurement beam emitted by the second head on the grating plate 22a).
- the first head (more precisely, the irradiation point on the grating plate 22a of the measurement beam emitted by the first head) and the second head (more precisely, the irradiation of the measurement beam emitted by the second head on the grating plate 22a).
- the first head and the second head of the head portion 24a are each a biaxial linear encoder that measures position information of the shuttle 10 in the X-axis direction and the Z-axis direction using the grating plate 22a, and the Y-axis direction and the Z-axis direction.
- a two-axis linear encoder that measures the position information is configured.
- the remaining head portions 24b and 24c are configured in the same manner as the head portion 24a including the first head and the second head, although the directions with respect to the respective metrology frames 340 are different (measurement directions in the XY plane are different). ing.
- the first head and the second head of the head unit 24b each use a grating plate 22b, a biaxial linear encoder that measures position information in the direction orthogonal to the ⁇ direction of the shuttle 10 in the XY plane and in the Z axis direction, and A two-axis linear encoder that measures position information in the ⁇ direction and the Z-axis direction is configured.
- the first head and the second head of the head unit 24c each use a grating plate 22c to measure position information in a direction orthogonal to the ⁇ direction of the shuttle 10 in the XY plane and position information in the Z-axis direction, and A two-axis linear encoder that measures position information in the ⁇ direction and the Z-axis direction is configured.
- an encoder head having the same configuration as the displacement measurement sensor head disclosed in US Pat. No. 7,561,280 is used. Can be used.
- An encoder system is configured by the three head portions 24a, 24b, and 24c that measure the position information of the shuttle 10 using the above-described three sets, that is, a total of six biaxial encoders, that is, three grating plates 22a, 22b, and 22c, respectively.
- the encoder system constitutes the first measurement system 20 (see FIG. 16). Position information measured by the first measurement system 20 is supplied to the exposure control device 380 i .
- the three head portions 24a, 24b, and 24c each have four measurement degrees of freedom (measurement axes), a total of 12 degrees of freedom can be measured. That is, in the three-dimensional space, since the maximum degree of freedom is 6, redundant measurement is actually performed for each of the 6 degrees of freedom directions, and two pieces of position information are obtained.
- the exposure control device 380 i uses the average value of the two pieces of position information for each degree of freedom as the measurement result in each direction based on the position information measured by the first measurement system 20. Thereby, the position information of the shuttle 10 and fine movement stage 322b can be obtained with high accuracy in all directions with six degrees of freedom due to the averaging effect.
- the second measurement system 25 can measure position information in the 6-degree-of-freedom direction of the fine movement stage 332b regardless of whether or not the shuttle 10 is mounted on the fine movement stage 332b.
- the second measurement system 25 irradiates a reflection surface provided on the outer surface of the side wall of the fine movement stage 332b, receives the reflected light, and measures position information of the fine movement stage 332b in the six degrees of freedom direction.
- Each interferometer of the interferometer system may be suspended and supported on the metrology frame 340 via a support member (not shown), or may be fixed to the surface plate 321.
- the second measurement system 25 mainly determines the position and orientation of the fine movement stage 332b in a desired manner when the shuttle 10 is not mounted on the fine movement stage 332b, that is, when the wafer is not exposed. Since it is used to maintain the state, the measurement accuracy may be lower than that of the first measurement system 20.
- the position information measured by the second measurement system 25 is supplied to the exposure control device 380 i (see FIG. 16).
- you may comprise a 2nd measurement system not only by an interferometer system but by an encoder system or the combination of an encoder system and an interferometer system. In the latter case, the position information in the three degrees of freedom direction in the XY plane of the fine movement stage 322b may be measured by the encoder system, and the remaining position information in the three degrees of freedom direction may be measured by the interferometer system.
- the load lock chamber 302 provided in each of the vacuum chambers 300 2 to 300 6 is also arranged side by side in the X-axis direction, similarly to the vacuum chambers 300 2 to 300 6 , so that the vacuum chambers 300 3 in one row are arranged.
- 300 load lock chamber 302 provided 2 respectively, and a chamber 300 1, and the load lock chamber 302 to the vacuum chamber 300 6 in the other row, 300 5, 300 4 is provided respectively to face at a predetermined interval Yes.
- a transfer chamber 311 that partitions a transfer space SP having a rectangular cross section extending in the X-axis direction is provided between the two facing each other.
- a movement path of a shuttle transport system which will be described later, is provided in the transport space SP.
- openings on both side walls of the transfer chamber 311 are formed as passages for the shuttle 10 at positions facing the gate portion. Since the transfer space SP can be set to a low vacuum space having a lower degree of vacuum than the inside of the vacuum chamber, for example, an atmospheric pressure space, the transfer chamber 311 is not necessarily used.
- the exposure control devices 380 2 , 380 3 , 380 4 , 380 5 , 380 6 are arranged above the load lock chamber 302 and in the vacuum chambers 300 2 , 300 3 , 300 as shown in FIG. 2B and FIG. 4 , 300 5 , 300 6 are accommodated in control boxes 381 2 , 381 3 , 381 4 , 381 5 , 381 6 disposed in the space inside.
- control boxes 381 2 , 381 3 , 381 4 , 381 5 , 381 6 are actually a vacuum chamber and a transfer chamber 311, as representatively shown for the control box 381 3 in FIG. Is placed on a support frame 313 constructed between the two.
- the support frame 313 is actually supported on the floor surface F.
- a measurement stage device 30 having a measurement stage ST that moves two-dimensionally in the XY plane and a measurement table TB mounted on the measurement stage ST,
- the measurement system 40 and a measurement room transfer system 62 made of, for example, an articulated robot for transferring the wafer W and the shuttle 10 are accommodated.
- the shuttle 10 is detachably attached to the measurement table TB via the same kinematic coupling as described above. Then, the measurement system 40 performs predetermined measurement on the wafer W held on the shuttle 10.
- a shuttle stocker (not shown) having a plurality of shelves that can store the shuttle 10 and capable of storing the plurality of shuttles 10 at the same time.
- the shuttle stocker also has a temperature control function of the shuttle 10 accommodated therein.
- a temperature control device for the shuttle may be provided separately from the shuttle stocker.
- the conveyance system which conveys a wafer and the conveyance system which conveys a shuttle may be provided separately, in this embodiment, in order to simplify description, a wafer and a shuttle are conveyed by the same conveyance system. Shall be done.
- a plurality of circular openings are formed in an arrangement corresponding to the above-described plurality of circular openings formed in the shuttle 10.
- the measurement stage ST is provided with a plurality of pins 32 in an arrangement corresponding to the plurality of circular openings, and the plurality of pins 32 are individually inserted into the plurality of circular openings of the measurement table TB.
- a measurement table TB is arranged on the measurement stage ST.
- the measurement table TB is driven by a drive system 34 provided on the measurement stage ST, and can be moved up and down (moved in the Z-axis direction) with a predetermined stroke.
- the measurement table TB is such that the upper surface of the shuttle 10 is higher than the upper end surfaces of the plurality of pins 32 by a predetermined distance in a state where the shuttle 10 is mounted via the kinematic coupling (the upper end surfaces of the plurality of pins). 13 does not protrude from the upper surface of the shuttle 10) and the wafer placement surface (upper surface of the electrostatic chuck) of the shuttle 10 is lower than the upper end surfaces of the plurality of pins 32 by a predetermined distance (see FIG. 13A).
- the upper end surfaces of the plurality of pins 32 protrude from the wafer mounting surface of the shuttle 10 and can move up and down between the second positions shown in FIG.
- the measurement table TB may be mounted on the measurement stage ST, and the plurality of pins 32 may be moved up and down with respect to the measurement table TB.
- the measurement stage ST is driven (including rotation in the ⁇ z direction) in the XY plane by a measurement stage drive system 36 (see FIG. 15) composed of a planar motor, for example.
- Position information of the measurement stage ST in the XY plane is measured by a measurement stage interferometer 38 (see FIG. 15).
- the vertical position of the measurement table TB is measured by an encoder included in the drive system 34.
- the operation of each part of the measurement stage device 30 is controlled by the measurement control device 50 (see FIG. 15).
- the measurement system 40 includes an alignment detection system ALG, and a surface position detection apparatus AF (see FIG. 15) having an irradiation system 42a and a light receiving system 42b.
- the electron beam resist in response to the application of a sensitive agent (electron beam resist) to the upper surface of the wafer held on the shuttle 10, the electron beam resist is exposed as detection light of the alignment detection system ALG.
- a detection beam having a wavelength that is not allowed is used.
- the alignment detection system ALG irradiates the target mark with a broadband detection light beam that does not sensitize the resist applied on the wafer, and the image of the target mark formed on the light-receiving surface by the reflected light from the target mark is not detected.
- An image processing type FIA (Field Image Alignment) system that takes an image of an indicator (an indicator pattern on an indicator plate provided inside) using an imaging device (CCD or the like) and outputs the image pickup signal. Is used.
- the imaging signal from the alignment detection system ALG is supplied to the measurement control device 50 via a signal processing device (not shown) (see FIG. 15).
- the alignment detection system ALG is not limited to the FIA system.
- the target mark is irradiated with coherent detection light, and two diffracted lights generated from the target mark (for example, diffracted light of the same order or in the same direction) are diffracted.
- a diffracted light interference type alignment detection system that detects by diffracting light may be used instead of the FIA system.
- the surface position detector AF has an irradiation system 42a and a light receiving system 42b, and is an oblique incidence type multi-point focal position having the same configuration as disclosed in, for example, US Pat. No. 5,448,332. Consists of a detection system.
- the plurality of detection points of the surface position detection device AF are arranged at predetermined intervals along the X-axis direction on the surface to be detected. In this embodiment, for example, they are arranged in a row matrix of 1 row and M columns (M is the total number of detection points) or 2 rows and N columns (N is 1/2 of the total number of detection points).
- the plurality of detection points are set almost evenly in a region having a length in the X-axis direction that is about the same as the diameter of the wafer W.
- the position information (surface position information) in the Z-axis direction can be measured on almost the entire surface of the wafer W only by scanning the wafer W once in the Y-axis direction.
- the components placed in the measurement chamber 60 described above, that is, the measurement stage device 30, the measurement system 40, the measurement chamber conveyance system 62, and the like, and the measurement control device 50 are held on the shuttle 10.
- a measuring unit 65 that performs pre-measurement on the wafer before exposure is configured (see FIG. 15).
- the shuttle 10 that moves in the space SP described above and holds the wafer before exposure is transferred from the measurement chamber 60 to the load lock chamber 302 included in the vacuum chamber 300 i.
- a shuttle transport system 70 (see FIG. 14) is further provided for repeatedly performing the shuttle transport operation for transporting the shuttle 10 that holds the exposed wafer from the load lock chamber 302 to the measurement chamber 60.
- the shuttle transfer system 70 is configured by a horizontal articulated robot that can move in the space SP, for example.
- the shuttle transport system 70 is controlled by a transport system control device 72 (see FIG. 14) including a microcomputer or the like.
- FIG. 14 is a block diagram showing the configuration of the control system of the exposure system 1000.
- the control system of the exposure system 1000 includes a main control device 100 composed of a workstation and the like that collectively control the entire exposure system 1000, a measurement control device 50 under the control of the main control device 100, and five exposure control devices 380 2. ⁇ 380 6 , and a transport system controller 72.
- FIG. 15 is a block diagram showing the input / output relationship of the measurement control device 50 constituting the control system of FIG.
- the measurement control device 50 includes a microcomputer and controls each unit shown in FIG. 15 provided in the measurement chamber 60.
- the exposure control device 380 i includes a microcomputer and controls each unit shown in FIG. 16 provided in the exposure chamber 301 i .
- a plurality of shuttles 10 are stored in a shuttle stocker (not shown). Further, it is assumed that the wafer before exposure is placed on the substrate transfer section by a wafer transfer system on the C / D 9000 side connected inline to the measurement chamber 60.
- step S102 the shuttle 10 stored in the shuttle stocker (not shown) is mounted on the measurement table TB. Specifically, the shuttle 10 stored in the shuttle stocker (not shown) is positioned at the second position on the measurement stage ST at the wafer exchange position from the shuttle stocker by the measurement chamber transport system 62. After being conveyed above the measurement table TB, it is driven downward and attached to the measurement table TB via a kinematic coupling.
- the wafer before exposure in the substrate transfer unit by the measuring chamber conveying system 62 (for convenience, the wafer W 1) is passed to a plurality of pins 32 of the measuring stage ST.
- the measurement table TB is in a second position, in this state, the wafer W 1 is in a state where the rotational position displacement and displacement between the center positions is adjusted is placed on the plurality of pins 32.
- the measurement table TB by driving upwards to the first position, to place the wafer W 1 on the electrostatic chuck of the shuttle 10, then, starts the adsorption of the wafer by the electrostatic chuck.
- the shuttle 10 is provided with a connection terminal connected to the electrostatic chuck, and the measurement table TB is provided with a table side terminal connected to a power supply source (not shown), and the measurement table TB.
- the connection terminal and the table side terminal are connected, and power can be supplied from the power supply source to the electrostatic chuck.
- next step S108 it performs an outline (rough) position measurement with respect to the shuttle 10 of the wafer W 1. More specifically, first, after the search alignment of the wafer W 1, and measures the positional information of the reference mark provided on the shuttle 10 (not shown), the relative wafer W 1 for the shuttle 10 (reference marks) Find location information.
- search mark located on the periphery portion substantially symmetrical with respect to the center of the wafer W 1 (hereinafter, referred to as search mark) is detected.
- the measurement control device 50 controls the driving of the measurement stage ST by the measurement stage drive system 36 and positions each search mark in the detection region (detection field of view) of the alignment detection system ALG while using the measurement stage interferometer 38. acquires measurement information, a detection signal upon detection of search mark formed on the wafer W 1 by using the alignment detection system ALG, based on the measurement information by the measuring stage interferometer 38, the position information of each search mark Ask for.
- the measurement control device 50 detects the detection result of the alignment detection system ALG output from a signal processing device (not shown) (the detection center (index center) of the alignment detection system ALG obtained from the detection signal) and each search mark. Relative position) and the measurement value of the measurement stage interferometer 38 when each search mark is detected, the position coordinates of the two search marks on the reference coordinate system are obtained.
- the reference coordinate system is an orthogonal coordinate system defined by the measurement axis of the measurement stage interferometer 38.
- the measurement control device 50 obtains the position coordinates on the reference coordinate system of the plurality of reference marks provided on the shuttle 10 in the same procedure as the search mark. Then, based on the position coordinates of the position coordinates and a plurality of reference marks of the two search marks to determine the relative position with respect to the shuttle 10 of the wafer W 1.
- approximate position measurement is that the detection accuracy of the position coordinates of the mark by the alignment detection system ALG is lower than the detection accuracy of the position coordinates of the alignment mark by detection of reflected electrons performed immediately before exposure. Because. Accordingly, the approximate position measuring relative the shuttle 10 of the wafer W 1 is completed. Incidentally, the wafer W 1, since in fact loaded on the shuttle 10 in a state where the rotational position deviation and the center position deviation is adjusted, the more central position deviation of the wafer W 1 is negligibly small, the residual rotation error is very Small.
- step S110 flatness measurement of the wafer W 1 (Measurement of surface irregularities) is performed.
- This flatness measurement is performed by capturing measurement information of the surface position detector AF and measurement information of the measurement stage interferometer 38 at a predetermined sampling interval while moving the measurement stage ST in the Y-axis direction.
- the wafer flatness is measured in the electron beam exposure apparatus because a position measurement error (lateral deviation) in the XY plane of the wafer occurs due to the unevenness of the wafer surface. This is because the measurement error needs to be corrected.
- This position measurement error can be easily obtained by calculation based on wafer flatness information (Z position information Z (X, Y) corresponding to XY coordinate position (X, Y) on the wafer coordinate system). . Since the information on the rotational deviation of the wafer is known by the search alignment, the relationship between the wafer coordinate system and the reference coordinate system can be easily obtained.
- step S112 the shuttle 10 holding the wafer W 1 is, by measuring the indoor transport system 62 is driven upwardly, detached from the measurement table TB to release the kinematic coupling After that, it is placed on the load-side shuttle placement portion of the shuttle delivery portion provided at the boundary with the space SP of the measurement chamber 60. Thereby, the preliminary preparation work including the preliminary measurement operation (S108, S110) in the measurement chamber 60 is completed. Even after the shuttle 10 is detached from the measurement table TB, the electrostatic chuck of the shuttle 10 is capable of holding the wafer W 1 by the residual charge. Further, the shuttle 10 may be provided with an internal power supply, and after the shuttle 10 is removed from the measurement table TB, power may be supplied from the internal power supply to the electrostatic chuck.
- step S122 the exposed wafer (for convenience, the wafer W 0) shuttle 10 for holding the can, is attached to the measuring table TB.
- the shuttle 10 holding the wafer W 0 is moved from the unload-side shuttle placement part of the shuttle delivery part to the above-described first position on the measurement stage ST at the wafer exchange position by the measurement room transfer system 62.
- the measurement room transfer system 62 After being conveyed above the measurement table TB that is positioned, it is driven downward and attached to the measurement table TB via a kinematic coupling.
- the disengaging from the shuttle 10 to the wafer W 0 (removed). Specifically, the suction of the wafer W 0 by the electrostatic chuck of the shuttle 10 is released, and the measurement table TB is driven downward to the second position. Thus, the wafer W 0 is totally pushed up from below by a plurality of pins 32, the wafer W 0 can be easily detached from the shuttle 10. In the case where the wafer W 0 due to residual charge is less likely to disengage from the shuttle 10 can in the wafer W 0 or is applied ultrasound, or also disengaging the wafer while various neutralization measures.
- the wafer W 0 which is supported by a plurality of pins 32, the measuring chamber conveying system 62 is carried out from the measurement table TB is placed on the substrate transfer unit described above.
- the shuttle 10 is driven upward by the measurement room transport system 62, released from the measurement table TB after releasing the kinematic coupling, and then stored in an empty storage shelf of the shuttle stocker. Is done. Thereby, the unloading operation of the exposed wafer in the measurement chamber 60 is completed.
- the shuttle 10 accommodated in the shuttle stocker is stored in the shuttle stocker until it is next taken out, and is adjusted (cooled) to a predetermined temperature during the storage.
- each exposure unit 310 is accommodated in each exposure chamber 301 i , and two load lock chambers 302 (load lock chambers) are provided correspondingly.
- each exposure chamber 301 i contains one exposure unit 310 and only one load lock chamber is provided in the vacuum chamber. That is, the vacuum chamber (exposure chamber), the exposure unit, and the load lock chamber (load lock chamber) have a one-to-one correspondence with each other.
- the wafer before the exposure with the electron beam resist applied to the measurement chamber 60 and the C / D 9000 is transferred by a transfer system (for example, an articulated robot) in the C / D 9000. Is placed on a substrate transfer portion provided at a boundary portion between the two. Within the C / D 9000, a series of processes including an electron beam resist coating process on the wafer are sequentially repeated, and the wafers are sequentially placed on the substrate transfer unit.
- a transfer system for example, an articulated robot
- the processes of steps S102 to S112 described above are performed.
- the shuttle 10 to coarse position measurement and flatness measurement of wafer shuttles to hold the wafer W 1 before exposure was completed will be placed on the load side shuttle mounting portion of the shuttle transfer unit.
- the shuttle 10 that holds the wafer W 1 before exposure from the load-side shuttle placement unit of the shuttle transfer unit by the shuttle transfer system 70 is loaded into the load lock chamber corresponding to the exposure chamber 301 i specified by the main controller 100. after being transported to the front of the 302, it is replaced with the shuttle 10 to hold the exposed wafer W of the designated exposure chamber 301 i.
- main controller 100 designates exposure chamber 301 i if there is an exposure chamber 301 i for which the exposure processing for the wafer has been completed at that time, and if there is no exposure chamber for which the exposure processing has been completed.
- the exposure chamber 301 i where the exposure process is scheduled to end at the earliest timing is designated.
- it is assumed that the exposure chamber 301 i where the exposure process is scheduled to end at the earliest timing is designated.
- Shuttle transfer system 70 after carrying the shuttle 10 1 into the load lock chamber 304, the operation of carrying the shuttle for holding a wafer before the next exposure from the shuttle transfer unit to another load lock chamber, or another exposed Engage in an operation (hereinafter referred to as another operation) of unloading the shuttle holding the wafer from another load lock chamber and transporting it to the shuttle delivery section.
- the shuttle 10 1 is housed in the lower storage rack of the shuttle carrier 306 in the exposure chamber 301 i.
- the shuttle carrier 306 is in a first state (first position) in which the height of the lower storage shelf coincides with the opening of the load lock chamber 304.
- the position of the shuttle 10 for convenience, referred to as loading and unloading position. In this case, exposure of wafer W 0 on the shuttle 10 0 is continued.
- the shuttle carrier 306 is simply shown by a virtual line (two-dot chain line) for easy understanding of the position of the shuttle.
- the shuttle carrier 306 descends from the first position to the second position below the first distance. As a result, the shuttle carrier 306 enters a second state in which the height of the upper storage shelf matches the opening of the load lock chamber 304. At this time, since the exposure of wafer W 0 on the shuttle 10 0 is continued, the shuttle carrier 306, until the exposure is completed, maintaining the second state. That is, the shuttle 10 1 waits at the first waiting position below the loading and unloading position.
- the exposure chamber transport system 312 When the exposure ends, the exposure chamber transport system 312, the shuttle 10 0, removed from fine movement stage 322b, toward the load lock chamber 302 side (-Y side) as indicated by the black arrow in FIG. 21 It is transported and stored in the upper storage shelf of the shuttle carrier 306. Thus, it housed respectively above and below the storage rack of the shuttle carrier 306, shuttle 10 0 and the shuttle 10 1, as shown in FIG. 22, a state of vertically overlapping. In advance to the shuttle 10 0 is removed from the fine movement stage 322b, based on the measurement information of the second measurement system 25 (see FIG.
- the feedback control of the posture initiated by the exposure control unit 380 i, then based on the first measurement information of the measurement system 20 (see FIG. 16), until the position control of the fine movement stage 322b of the shuttle and integral is started, the fine movement stage 322b 6
- the position and orientation in the direction of freedom are maintained in a predetermined reference state.
- the shuttle carrier 306 moves upward by a first distance and returns to the first state (first position) described above. That is, the shuttle by upward movement of the shuttle carrier 306, upward and shuttle 10 1 and the shuttle 10 0, is moved a first distance, along with positioning the shuttle 10 0 to the second standby position above the loading and unloading position 101 Position 1 to the loading / unloading position.
- the exposure chamber transport system 312 the shuttle 10 1 is taken out from the shuttle carrier 306 is transported upward in the coarse and fine movement stage 322 as indicated by the black arrow in FIG. 23, is mounted on the fine movement stage 322b (See FIG. 24).
- the shuttle 10 1 since the posture is maintained at the reference state, the shuttle 10 1, only attached to the fine movement stage 322b via the kinematic coupling, electronic positional relationship of the beam irradiation device 330 (the electron beam optics) and the shuttle 10 1 has a desired positional relationship.
- the electron beam optical system can reliably irradiate at least one alignment mark formed on the scribe line (street line) corresponding to each of the 100 shot areas. . Therefore, the reflected electrons from at least one each of the alignment mark is detected by the reflected electron detection system, all points alignment measurement of the wafer W 1 is performed, based on the result of this all points alignment measurement, a plurality of the wafer W 1 The exposure using the electron beam irradiation apparatus 330 is started for the shot area.
- the shuttle carrier 306 moves downward by the first distance and enters the second state again.
- the upper storage rack of the shuttle carrier 306 that shuttle 10 0 is accommodated is positioned at the same height as the opening of the load lock chamber 304.
- the exposure chamber transport system 312 the shuttle 10 0 is removed from the shuttle carrier 306, as indicated by the black arrow in FIG. 25, is conveyed toward the load lock chamber 304, the shuttle 10 0 loadlock chamber When it is carried into 304, the vacuum-side gate valve 302c is closed (see the white arrow in FIG. 26).
- the shuttle transport system 70 once completes the other operations described above and moves in front of the load lock chamber 302 included in the vacuum chamber 300 i .
- the shuttle transfer system 70 is continuing another operation, for example, when the exposure of the wafer W 0 in the exposure chamber 301 i is completed, the main controller 100 immediately performs the other operation. It may be temporarily interrupted and moved in front of the load lock chamber 302 included in the vacuum chamber 300 i .
- the recovered shuttle 10 0 by the shuttle transfer system 70 immediately returned to the unload side shuttle mounting portion of the shuttle transfer unit.
- the shuttle 10 0 returned is by the measurement chamber conveying system 62, for wafer exchange, is conveyed toward the measurement table TB.
- the inside measurement chamber 60 is repeated the process described above, each time the specified exposure chamber by the main controller 100 is performed, the conveyance of the shuttle by the shuttle transfer system 70, and designated the exposure chamber 301 i shuttle Exchange and exposure processing operations are repeated.
- the shuttle carrier 306 in the open front and rear of the gate valve 302b for extracting the shuttle 10 0 from the load lock chamber 304, the shuttle carrier 306, it is assumed to return to the first state (the first position), not limited to this, The shuttle carrier 306 in the second state may be left as it is.
- the procedure similar to the above is performed while the setting of the first state and the second state of the shuttle carrier 306 is opposite to the above description. You can change the shuttle.
- the first standby position for the shuttle holding the wafer before exposure is set above the carry-in / out position
- the second standby position for the shuttle holding the exposed wafer is set below the carry-in / out position. Will be.
- the above-described preparatory work in the measurement chamber 60 and a series of operations by the shuttle transport system 70 (carrying the shuttle holding the wafer before exposure from the shuttle transfer unit into the load lock chamber, and The total time required for carrying out the shuttle holding the exposed wafer from the load lock chamber and carrying it to the shuttle transfer unit) is the exposure operation (all-point alignment operation) performed by one exposure unit 310. Therefore, only one measurement chamber 60 and one shuttle transport system 70 are provided for ten exposure units 310 as in the exposure system 1000 according to the present embodiment. It is enough that it is done. That is, due to the series of operations in the measurement chamber 60 and the series of operations by the shuttle transport system 70, the throughput of the exposure system 1000 as a whole is not reduced.
- the first control rack 200 that distributes the utility supplied from below the floor surface F via wiring and piping to each of the chambers 300 1 to 300 6.
- the components of the exposure system 1000 including the two rows of chambers, the first control rack 200, and the second control rack 500 occupy a rectangular parallelepiped space as a whole together with the C / D 9000. Therefore, in this embodiment, it is possible to avoid the occurrence of a poorly usable space in the clean room and to improve the utilization efficiency of the space.
- the utility is supplied to each of the chambers 300 1 to 300 6 from above by the second control rack 500, the following advantages are obtained. That is, for example, it is necessary to connect many electric wires (wirings) to the lens barrel 331 of the electron beam irradiation apparatus 330, but if such electric wires are to be connected from below, for example, a stage device 320 including a coarse / fine movement stage 332 and the like Exist, get in the way, and the connection itself is difficult. On the other hand, when connecting the electric wire to the barrel 331 from above, since there is nothing to block, it can be easily connected even if the number of electric wires is large.
- the exposure system 1000 includes a total of ten exposure units 310 housed in the vacuum chambers 300 2 to 300 6 , each of which can be turned on / off.
- 100 optical columns, for example, 300 mm composed of a multi-beam optical system capable of arranging, for example, 4000 deflectable circular spots of electron beams having a diameter of 20 nm within a rectangular (for example, 100 ⁇ m ⁇ 20 nm) exposure region.
- an electron beam irradiation device 330 is provided in the lens barrel 331 in a positional relationship corresponding to, for example, approximately 100 shot areas on the wafer at a ratio of 1: 1. Therefore, by performing exposure of separate wafers in parallel by a total of ten exposure units 310, the throughput can be significantly improved as compared with the conventional electron beam exposure apparatus.
- measurement of the positional relationship of the wafer with respect to the shuttle is performed in a state where the wafer is held by the shuttle 10 prior to exposure in a measurement chamber 60 different from the exposure chamber 301 i .
- the shuttle 10 holding the wafer for which the pre-measurement is completed is carried into each exposure chamber 301 i , and the kinematic is moved to the fine movement stage 332b at the reference position.
- the throughput can be improved as compared with the conventional case.
- the shuttle transfer system 70 allows the wafer that has been subjected to the pre-measurement and the wafer that has been exposed to be integrated with the shuttle 10 into the load lock chamber 302 of each of the measurement chamber 60 and the vacuum chambers 300 2 to 300 6. Is transported between. For this reason, the exposure chamber transfer system 312 carries the shuttle 10 holding the wafer, which has been carried into the load lock chamber 302 of each of the vacuum chambers 300 2 to 300 6 and has been subjected to the preliminary measurement, into each exposure chamber 301 i . After mounting on fine movement stage 322b, fine wafer alignment and wafer exposure based on this result can be started immediately.
- the wafers in the exposure chamber 301 i are exchanged together with the shuttle in the procedure described with reference to FIGS. 18 to 27, and in particular, the lower and upper stages of the shuttle carrier 306.
- the storage shelves arranged both shuttle 10 0, 10 1 in the vertical shuttle 10 0 for holding the wafer W 0 of the shuttle 10 1 and exposed for holding the wafer W 1 before exposure by housing respectively, the shuttle carrier
- the shuttle carrier By moving 306 upward (or downward), a procedure (see FIGS. 22 and 23) for simultaneously moving both shuttles 10 0 and 10 1 upward is employed.
- the shuttle carrier 306 is used to move the shuttles 10 0 , 10 1 up and down at the same time (or downward).
- the shuttle carrier 306 is not necessarily used. If the same can be done, the configuration for that is not particularly limited. For example, the two shuttles 10 0 , 10 1 may be moved upward (or downward) at the same time in a state where both shuttles 10 0 , 10 1 are arranged vertically.
- the coarse movement stage drive system 323 that drives the coarse movement stage 332a in the X-axis direction is a uniaxial drive mechanism, for example. Since it is constituted by a feed screw mechanism using a ball screw, there is no possibility of magnetic flux leakage from the feed screw mechanism. Further, as the fine movement stage drive system 327 for driving the fine movement stage 332b on which the shuttle 10 is mounted in the direction of 6 degrees of freedom, the above-described closed magnetic field type and moving magnet type motor 327 is used, and the upper surface and both side surfaces of the motor.
- the stage apparatus 320 can effectively suppress or prevent upward magnetic flux leakage as described above, an electron beam exposure apparatus, other charged particle beam exposure apparatus, SEM, or the like It is suitable as a stage device used for the above.
- the coarse motion stage drive system 323 is configured with a feed screw mechanism using a ball screw, but is not limited to this configuration.
- the stage device 320 since the weight canceling device 324 that supports the own weight of the fine movement stage 332b (and the shuttle 10) on the surface plate 321 is provided, the fine movement stage (and the shuttle 10) is provided. It is necessary to generate a steady force for supporting the own weight by the motor 327 when it is not driven. Thereby, it is possible to prevent inconvenience due to large heat generation and to further suppress or prevent the magnetic force from adversely affecting the positioning of the electron beam.
- the position information of the fine movement stage 322b in the direction of 6 degrees of freedom is obtained by measuring the position information of the shuttle 10 described above. It is measured by the first measurement system 20 comprising: Since the encoder system has an extremely short optical path length of the measurement beam as compared with the interferometer, the required space is small and the first measurement system 20 can be downsized. Further, as described above, the first measurement system 20 can measure a total of 12 degrees of freedom. Redundant measurement is performed for each of the 6 degrees of freedom directions, and two pieces of position information are obtained.
- the exposure control device 380 uses the average value of the two pieces of position information for each degree of freedom as the measurement result in each direction. Thereby, the position information of the shuttle 10 and fine movement stage 322b can be obtained with high accuracy in all directions with six degrees of freedom due to the averaging effect. Therefore, it is possible to improve the position controllability of the wafer during exposure, and high-accuracy exposure is possible.
- the exposure unit 310 removes a part of the line pattern and removes the ultraviolet light exposure apparatus. It can be suitably used for forming a pattern including a non-periodic portion finer than the image limit.
- a pattern forming method as disclosed in, for example, Japanese Patent Application Laid-Open No. 2011-258842, as a first step, a line width d (ultraviolet light) is applied to each shot region on the wafer by, for example, a double patterning method. A line-and-space pattern having a pitch of 2d is formed with a line width finer than the resolution limit of the exposure apparatus.
- a second step there is a pattern forming method in which the line pattern is partially removed from the line and space pattern by exposure and etching with an electron beam exposure apparatus in each shot area.
- the non-periodic part in the first stage, after forming a line and space pattern having a line width of 10 nm and a pitch of 20 nm in each shot area on the wafer by, for example, a double patterning method, By exposing the non-periodic part using each exposure unit 310 of the exposure system 1000 with the wafer as a target in two stages, the non-periodic part (separation) finer than the resolution limit of the ultraviolet light exposure apparatus. Part) can be formed efficiently.
- the double patterning method used in the first stage may be either a pitch splitting technique or a spacer pitch doubling (Spacer Pitch Doubling, Spacer transfer or Sidewall transfer) technique.
- the target used in the second stage is not limited to the double patterning method, and an electron beam exposure apparatus or an EUV exposure apparatus is used to set the line width d (beyond the resolution limit of the ultraviolet light exposure apparatus) in each shot area. It may be a wafer having a fine line width and a line-and-space pattern with a pitch of 2d.
- a pair of exposure units 310 are accommodated in the vacuum chamber 300 i . That is, not only the stage apparatus 320 including the movable fine movement stage 322b on which the shuttle 10 holding the wafer W is mounted inside each of the vacuum chambers 300 2 to 300 6 but also the exposure apparatus 310 together with the stage apparatus 320.
- the entire electron beam irradiation apparatus 330 having an electron beam optical system for exposing the wafer held by the shuttle 10 on the fine movement stage 322b by irradiating an electron beam is accommodated. Therefore, even if the atmospheric pressure fluctuates, the lens barrel 331 that is entirely accommodated in the vacuum chamber 300 i is not deformed, and the electron beam optical system in the lens barrel 331 is adversely affected. There is no fear.
- the stage device 320 includes both the magnetic shield member 328 and the weight canceling device 324, both ends of which are fixed to the coarse movement stage 332a, as a configuration for suppressing or preventing magnetic field fluctuations.
- the magnetic shield member 328 may be provided.
- the case where a pair of exposure units 310 are accommodated in the vacuum chamber 300 i is illustrated.
- the present invention is not limited to this.
- One exposure unit 310 is included in one vacuum chamber, or Three or more may be accommodated.
- the case where the exposure system 1000 includes the five exposure chambers 301 i and the one measurement chamber 60 has been described.
- at least one exposure chamber is sufficient.
- the measuring chamber 60 the chamber 300 1, which is formed therein is has been assumed to be a part of two rows of chambers consisting of the three chambers, the chamber 300 1 is not necessarily a part of the two rows of chambers It does not have to be configured, and the installation location is not limited.
- each unit that was placed inside the measurement chamber 60 of the above embodiment may not be provided inside the chamber 300 1, short, pre-measurement of such schematic position measurement and flatness measurement of wafer shuttle
- the above-described measuring unit 65 that can execute the above-described processing may be provided in a part of the exposure system.
- the content of the pre-measurement described in the above embodiment is merely an example, and other measurement content may be included.
- the measurement stage apparatus 30 on which the wafer before exposure is placed for the pre-measurement cooperates with the measurement chamber transfer system 62 (transfer member) to load the wafer into the shuttle 10 and the shuttle.
- the load / unload apparatus 32, 34, TB
- the present invention is not limited to this, and the measurement is performed separately from the measurement stage ST used for preliminary measurement.
- a loading / unloading device that loads the wafer with respect to the shuttle 10 and unloads the wafer from the shuttle 10 may be provided in cooperation with the transfer member.
- the second control rack 500 is provided in addition to the first control rack 200 in addition to the first control rack 200 in addition to the first control rack 200 has been described.
- the second control rack 500 is not necessarily provided.
- the utility supplied from the lower side of the floor F via the wiring and piping by the first control rack 200 is supplied to each of the chambers 300 1 to 300 6 from the upper side. It is desirable to distribute.
- the number of chambers may be two ( chambers 300 1 and 300 2) .
- the second control rack 500 may be provided above the chambers 300 1 and 300 2 .
- FIG. 28 shows a vacuum chamber 300a provided in an exposure system according to a modification and an exposure unit 310 accommodated therein.
- a part of the plurality of cables 315 which are utility supply members connected to the inside of the second control rack 500, pass through the side wall of the vacuum chamber 300a. It is connected to the irradiation device 330.
- a plurality of (four in FIG. 28) attachment members 316a to which supply members such as wiring and piping are attached are provided on the side wall of the vacuum chamber 300a shown in FIG.
- One mounting member 316b is provided.
- one end portions of a plurality of cables 315 are respectively connected to the outer peripheral portion and the upper surface portion of the lens barrel 331 of the electron beam irradiation apparatus 330 via attachment members 316a or 316b.
- Each of the plurality of cables 315 includes at least one of wiring and piping.
- the other end of each of the plurality of cables 315 is connected to the second control rack 500 described above. Utilities are supplied to the electron beam irradiation apparatus 330 from the second control rack 500 located above the vacuum chamber 300 via these cables 315.
- attachment members 316a and 316b support the intermediate portion or one end portion of each of the plurality of cables 315 via a seal member for maintaining the airtightness inside the vacuum chamber 300a.
- the attachment members 316a and 316b may be formed of a kind of seal member in which a through-hole through which the cable 315 passes is formed, the first member disposed on the inner surface side of the vacuum chamber 300a, and the outer surface of the vacuum chamber 300a.
- a vacuum connector for maintaining the airtightness inside the vacuum chamber 300a may be used.
- FIG. 29 shows a vacuum chamber 300b included in the exposure system according to the second modification and an exposure unit 310 accommodated therein.
- the internal space of the vacuum chamber 300b is a portion (upper end) excluding the first chamber 301a in which the emission end (lower end) of the stage device 320 and the electron beam irradiation device 330 is accommodated, and the lower end of the electron beam irradiation device 330. Is partitioned into a second chamber 301b in which is stored.
- Exposure system according to this modification in place of the vacuum chamber 300 i, the vacuum chamber 300b is used for partitioning the internal space of the vacuum chamber 300b into a first chamber 301a and second chamber 301b, will be described The point where such a configuration is adopted is different from the above-described embodiment.
- the shuttle carrier and the exposure chamber transfer system are not shown.
- a plurality of cables 315 which are utility supply members, are attached to the side wall (side plate) and ceiling wall (top plate) of the first chamber 301a portion of the vacuum chamber 300b via the attachment members 316a or 316b. (Fixed).
- a flange portion FLG is provided at a position above the above-described metrology frame 340 on the outer peripheral portion of the lens barrel 331 of the electron beam irradiation device 330, and the electron beam irradiation device is provided via the flange portion FLG.
- 330 is supported in a suspended state from the top plate (ceiling wall) of the vacuum chamber 300b via the three suspension support mechanisms 350a, 350b, 350c (flexible connection members) described above.
- the flange portion FLG is formed in a ring shape so as to protrude from the outer peripheral portion of the lens barrel 331.
- a non-contact type positioning device similar to the above-described positioning device 353 is provided in the flange portion FLG. (Not shown) is provided.
- An annular protrusion 317 is provided on the inner wall surface at the boundary between the first chamber 301a and the second chamber 301b of the vacuum chamber 300b. And between the flange part FLG and the protrusion part 317, the annular connection part 319 which connects both is provided.
- the annular connecting portion 319 includes an annular plate 314 disposed on the projecting portion 317, and a ring-shaped metal bellows 329 disposed so as to surround the lens barrel 331 between the annular plate 314 and the flange portion FLG. Including.
- the annular plate 314 is mounted on the upper surface of the projecting portion 317 at the outer peripheral side half of the lower surface thereof over the entire circumference.
- the bellows 329 has an upper end connected to the lower surface of the annular plate 314 and a lower end connected to the upper surface of the flange portion FLG. For this reason, the bellows 329 has a structure that can expand and contract in the Z-axis direction.
- the first chamber 301a and the second chamber 301b are partitioned with good airtightness by the protruding portion 317, the flange portion FLG, and the annular connecting portion 319.
- the exposure unit 310 is accommodated inside the vacuum chamber 300b as in the above embodiment, so that the lens barrel 331 that is entirely accommodated inside the vacuum chamber 300a is provided even if the atmospheric pressure fluctuates. There is no possibility that the electron beam optical system in the lens barrel 331 will be adversely affected.
- no cable is arranged in the first chamber 301a, the first chamber 301a and the second chamber 301b are partitioned with good airtightness, and the annular connecting portion 319 is provided. Since a metal bellows 329 that hardly degass is used, each part disposed in the first chamber 301a is hardly affected by degassing.
- the electron beam irradiation device 330 is suspended and supported from the ceiling of the vacuum chamber 300b by the three suspension support mechanisms 350a, 350b, and 350c via the flange portion FLG.
- the flange portion FLG is connected to the annular plate 314 via a metal bellows 329 that can be expanded and contracted. For this reason, the function of the three suspension support mechanisms 350a, 350b, and 350c can provide high vibration isolation performance and can greatly reduce the weight of the mechanism unit.
- the relative position of the electron beam irradiation device 330 relative to the vacuum chamber 300a in the X-axis direction, the Y-axis direction, and the Z-axis direction, and the relative rotation angles around the X-axis, Y-axis, and Z-axis by the positioning device (not shown) Maintained in a certain state (predetermined state).
- the annular connecting portion 319 (bellows 329) allows relative displacement of the flange portion FLG (electron beam irradiation device 330 and metrology frame 340) with respect to the vacuum chamber 300b, and the flange portion FLG (electron beam from the vacuum chamber 300b).
- the metrology frame 340 may be provided to the flange portion FLG without providing the metrology frame 340 separately from the flange portion FLG.
- a vacuum chamber 300c shown in FIG. 30 includes only a portion corresponding to a portion defining the first chamber 301a of the vacuum chamber 300b of the second modification described above.
- the inside and outside of the vacuum chamber 300c are partitioned by the flange portion FLG and the annular connecting portion 319 connected to the flange portion FLG as in the above-described modification. ing.
- the electron beam irradiation apparatus 330 is suspended and supported from the frame 400 by the three suspension support mechanisms 350a, 350b, and 350c via the flange portion FLG.
- heat can be radiated from the electron beam irradiation device 330 via air.
- the metrology frame 340 may be provided to the flange portion FLG without providing the metrology frame 340 separately from the flange portion FLG.
- the electron beam irradiation device 330 is integrated with the metrology frame 340, and the top plate (ceiling wall) or frame of the vacuum chamber via the three suspension support mechanisms 350a, 350b, 350c.
- the present invention is not limited to this, and the electron beam irradiation apparatus 330 may be supported by a floor-standing body.
- the unexposed wafer and the exposed wafer are both transported between the vacuum chambers 300 2 to 300 6 and the measurement chamber 60 together with the shuttle 10.
- the present invention is not limited to this, and all the vacuum chambers 300 2- are controlled by a wafer transfer system including a horizontal articulated robot that moves a pre-exposure wafer and an exposed wafer along the movement path in the space SP. 300 6 and may be transported to and from the measurement chamber 60.
- the alignment mark is detected by the electron beam irradiation device 330 inside the exposure chamber 301 i.
- the above-mentioned space SP in which the wafer is transported and a part of the measurement chamber 60 communicating with the space SP are a vacuum chamber. You may comprise so that a low vacuum state with a low degree of vacuum compared with the inside of this can be set.
- the load lock chamber When loading wafers (and shuttles) from the atmosphere into the load lock chamber, it is necessary to evacuate the load lock chamber in as short a time as possible until it becomes as high as the vacuum chamber.
- the environment in which the wafer (and the shuttle) is placed changes from atmospheric pressure to high vacuum, and the wafer shrinks due to a temperature drop.
- the rate of temperature decrease is reduced, and the shrinkage of the wafer due to the temperature decrease is reduced.
- the case where the wafer is transported integrally with the shuttle 10 between the measurement chamber 60 and each exposure chamber 301 i has been described. Even in an exposure apparatus that holds the holding member mechanically on the fine movement stage 332b and transports the wafer independently, the position information of the holding member in the direction of, for example, 6 degrees of freedom is measured by the encoder system in the same manner as in the above embodiment. It is also good to do.
- an encoder system having the same configuration as the first measurement system 20 of the above embodiment may be used.
- a head portion since the holding member is not conveyed, a head portion may be provided on the holding member side and a grating plate may be provided so that the head portion can face the outside of the holding member.
- a wafer carry-out unit may be provided separately from the measurement chamber 60, and the wafer may be removed from the shuttle at the wafer carry-out unit.
- the fine movement stage 332b is movable in the direction of six degrees of freedom with respect to the coarse movement stage 332a.
- the present invention is not limited to this, and the fine movement stage is movable only in the XY plane. May be.
- the first measurement system 20 and the second measurement system 25 that measure the position information of the fine movement stage may also be able to measure the position information regarding the three degrees of freedom direction in the XY plane.
- the first measurement system 20 performs redundant measurement for each direction in the 6-degree-of-freedom direction, and based on the average of the two position information obtained for each direction, the fine movement stage in each direction.
- the position of the fine movement stage in each direction is determined based on the average of three or more pieces of position information. It is good also as what asks for.
- redundant measurement may be performed only in a part of the six degrees of freedom direction, for example, in the three degrees of freedom direction in the XY plane, or redundant measurement may not be performed in any direction.
- the exposure system exposes a target coated with a sensitive agent with a charged particle beam, and pre-measures the target before exposure held by the first holding member.
- the first holding member holding the target for which the pre-measurement has been completed is transferred from the first chamber into the second chamber through the load lock chamber, and then the target for which the exposure has been completed from the vacuum chamber.
- An exposure system is provided that includes a transfer system that transfers the second holding member to be held via the load lock chamber.
- the transfer system includes both a transfer system disposed outside the vacuum chamber and the load lock chamber and a transfer system disposed in the vacuum chamber.
- the first holding member is moved downward or upward by a predetermined distance to wait at the first standby position and holds the exposed target.
- the base member, the first stage movable in the first direction with respect to the base member, and the first stage intersect with the first direction.
- a first stage comprising: a second stage movable in a second direction; a driving motor for driving the second stage; and a magnetic shield member provided on the first stage and covering at least an upper surface and a side surface of the motor.
- a stage apparatus is provided.
- the base member, the first stage movable in the first direction with respect to the base member, and the first stage intersect with the first direction.
- a second stage device is provided comprising a weight cancellation device supported on the member.
- the target has a charged particle beam optical system and one of the first and second stage apparatuses in which the target is held on the second stage, and the target is charged.
- a first exposure apparatus comprising a charged particle beam irradiation apparatus that irradiates a particle beam is provided.
- the charged particle beam optical system having a charged particle beam optical system and irradiating a target with a charged particle beam, and at least the charged particle beam optical system holding the target
- a table movable in a predetermined plane orthogonal to the optical axis of the system, a drive system for driving the table, an encoder system capable of measuring position information of the table, and the position information measured by the encoder system.
- a second exposure apparatus is provided that includes a control device that controls driving of the table by the drive system.
- the exposure system 1000 which concerns on this embodiment forms a fine pattern on a glass substrate, and manufactures a mask. Can also be suitably applied.
- the electron beam exposure system 1000 that uses an electron beam as a charged particle beam has been described.
- the above embodiment can also be applied to an exposure apparatus that uses an ion beam or the like as a charged particle beam for exposure. Can do.
- the exposure system according to the present invention is suitable for use in a lithography process in the manufacture of electronic devices such as semiconductor elements.
- 60 Measurement room, 200 ... First control rack, 300 1 , 300 2 , 300 3 ... Chamber, 300 4 , 300 5 , 300 6 ... Chamber, 301 i ... Exposure room, 302 ... Load lock chamber, 310 ... Exposure unit 322: Coarse / fine movement stage, 330: Electron beam irradiation device, 350a, 350b, 350c ... Suspension support mechanism, 351 ... Vibration isolation pad, 352 ... Wire, 353 ... Positioning device, 400 ... Frame, 500 ... Second control rack , 1000 ... exposure system, 9000 ... C / D, F ... floor surface, SP ... space, W, W 0 , W 1 ... wafer.
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Abstract
Description
上記実施形態では、前述したように、第2制御ラック500が、真空チャンバ300iに対して、ユーティリティを上方から供給する露光システムについて説明した。次に、この露光システムの第1の変形例について図28に基づいて説明する。図28には、変形例に係る露光システムが備える真空チャンバ300a及びその内部に収容された露光ユニット310が示されている。真空チャンバ300aは、前述した真空チャンバ300i(i=2、3、4、5、6)に相当するものである。図28の変形例に係る露光システムでは、第2制御ラック500の内部に接続されているユーティリティ供給用の供給部材である複数のケーブル315の一部が、真空チャンバ300aの側壁を介して電子ビーム照射装置330に接続されている。
次に、第2の変形例に係る露光システムについて図29に基づいて説明する。図29には、第2の変形例に係る露光システムが備える真空チャンバ300b及びその内部に収容された露光ユニット310が示されている。真空チャンバ300bは、前述した真空チャンバ300i(i=2、3、4、5、6)に相当するものである。真空チャンバ300bの内部空間は、ステージ装置320及び電子ビーム照射装置330の射出端部(下端部)が収容された第1室301aと、電子ビーム照射装置330の下端部を除く部分(上端部)が収容された第2室301bとに区画されている。本変形例に係る露光システムは、真空チャンバ300iに代えて、真空チャンバ300bが用いられ、真空チャンバ300bの内部空間を第1室301aと第2室301bとに区画するため、次に説明するような構成が採用されている点が、前述した実施形態と異なる。なお、図29では、シャトルキャリア及び露光室内搬送系は図示が省略されている。
Claims (31)
- ターゲットを荷電粒子線で露光する露光システムであって、
ターゲットに感応剤を塗布する基板処理装置に隣接して配置される第1チャンバと、
前記第1チャンバに対し、該第1チャンバと前記基板処理装置とが隣接する第1方向に交差する第2方向に離間して配置された第2チャンバと、
前記第2チャンバ及び前記基板処理装置のそれぞれに隣接又は近接して配置され、外部のユーティリティ供給源に接続された第1制御ラックと、を備え、
前記第1制御ラックは、前記ユーティリティ供給源から供給される前記ユーティリティを前記第1チャンバ及び前記第2チャンバのそれぞれに分配する露光システム。 - 前記第1及び第2チャンバの上方に配置され、前記第1制御ラックから供給される前記ユーティリティを前記第1及び第2チャンバに供給する第2制御ラックをさらに備える請求項1に記載の露光システム。
- 前記第2チャンバ及び前記第1制御ラックは、前記第1方向に関して隣接して配置されている請求項1又は請求項2に記載の露光システム。
- 前記基板処理装置と前記第1チャンバとはインライン接続されており、
前記基板処理装置内の空間、前記第1制御ラックの空間、前記第2チャンバの空間は、互いに独立している請求項1から請求項3のいずれか一項に記載の露光システム。 - 前記基板処理装置、前記第1制御ラック、前記第2チャンバは、互いに離間している請求項4に記載の露光システム。
- 前記第1方向に関し、前記基板処理装置が隣接する前記第1チャンバの一側とは反対の他側に隣接して配置される第3チャンバを備える請求項1から請求項5のいずれか一項に記載の露光システム。
- 前記第1方向に関し、前記第1制御ラックが隣接する前記第2チャンバの一側とは反対の他側に隣接して配置される第4チャンバを備える請求項1から請求項6のいずれか一項に記載の露光システム。
- 前記第1チャンバと前記第2チャンバとの間、及び前記第3チャンバと前記第4チャンバとの間に配置され、前記第1、第2、第3及び第4チャンバのそれぞれに接続された搬送チャンバを備える請求項7に記載の露光システム。
- 前記搬送チャンバ内には、前記第1チャンバと、前記第2、第3及び第4チャンバとの間で前記ターゲットを搬送するための搬送空間が形成される請求項8に記載の露光システム。
- 前記搬送空間及び前記第1チャンバ内の空間と、前記第2、第3及び第4チャンバ内空間とは互いに異なる雰囲気である請求項9に記載の露光システム。
- 前記第2、第3及び第4チャンバ内の空間は、真空雰囲気である請求項10に記載の露光システム。
- 前記搬送チャンバの内部及び前記第1チャンバの内部は、前記第2、第3及び第4チャンバの内部に比べて真空度の低い低真空状態に設定可能である請求項11に記載の露光システム。
- 前記第1、第2、第3及び第4チャンバのそれぞれと、前記搬送チャンバとの間に設けられるロードロック室を有する請求項9から請求項12のいずれか一項に記載の露光システム。
- 前記第1チャンバ内には、前記ターゲットに対する計測が行われる計測室が形成され、
前記第2、第3及び第4チャンバ内には、前記感応剤が塗布された前記ターゲットを荷電粒子線で露光する露光室が形成されている請求項13に記載の露光システム。 - 前記第2、第3及び第4チャンバのそれぞれには、前記感応剤が塗布された前記ターゲットを前記荷電粒子線で露光する露光ユニットの少なくとも一部が、少なくとも各1つ収容されている請求項14に記載の露光システム。
- 前記第2、第3及び第4チャンバのそれぞれには、前記露光ユニットの少なくとも一部が、各2つ収容されている請求項15に記載の露光システム。
- 前記露光ユニットは、前記ターゲットを保持して移動可能なステージを含むステージ装置と、前記ターゲットに荷電粒子線を照射して露光する荷電粒子線照射装置とを有し、
前記チャンバの内部に、前記ステージ及び前記荷電粒子線照射装置の少なくとも射出端部が収容されている請求項15又は16に記載の露光システム。 - 前記チャンバの内部に、前記露光ユニット全体が収容されている請求項17に記載の露光システム。
- 前記ステージ装置は、前記ステージ及び該ステージの外部の一方に設けられ、2次元格子が形成された格子部と、前記ステージ及び該ステージの外部の他方に前記格子部と対向可能に設けられ、前記格子部に複数のビームを照射し、格子部からの戻り光を受光するヘッド部とを有し、前記ステージの位置情報を計測するエンコーダシステムを含む請求項17又は18に記載の露光システム。
- 前記露光ユニットは、前記格子部と前記ヘッド部のうち、前記ステージの外部に設けられる前記エンコーダシステムの構成部分が設けられるメトロロジーフレームをさらに有し、
前記メトロロジーフレームは、前記荷電粒子線照射装置と一体で、前記チャンバの天井部から複数の柔構造の吊り下げ支持機構を介して吊り下げ支持されている請求項19に記載の露光システム。 - 前記荷電粒子線照射装置は、前記メトロロジーフレームを介して前記チャンバの天井部に3つの前記吊り下げ支持機構を介して3点で吊り下げ支持されている請求項20に記載の露光システム。
- 前記吊り下げ支持機構は、前記天井部に固定された防振パッドと、該防振パッドに一端が接続され前記荷電粒子線照射装置の支持部材に他端が接続されたワイヤとを含む請求項20又は21に記載の露光システム。
- 前記荷電粒子線照射装置と前記チャンバとの相対位置を所定の状態に維持するための非接触方式の位置決め装置をさらに備える請求項22に記載の露光システム。
- 前記第1、第2チャンバ、前記第1制御ラック及び前記第2制御ラックは、前記基板処理装置とともに、全体として直方体の空間を占めている請求項1から請求項23のいずれか一項に記載の露光システム。
- 前記ユーティリティ供給源は、前記基板処理装置、前記第1チャンバ、前記第2チャンバ、前記第1制御ラックが配置される床面の下方に配置され、
前記第1制御ラックには、前記床面を介して前記ユーティリティ供給源と接続される第1の供給部材が接続されていること請求項1から請求項24のいずれか一項に記載の露光システム。 - 感応剤が塗布されたターゲットを荷電粒子線で露光する露光システムであって、
前記ターゲットを保持して移動可能なステージを含むステージ装置と、前記ターゲットに荷電粒子線を照射して露光する荷電粒子線照射装置とを有する露光ユニットと、
前記露光ユニットの少なくとも一部を収容する真空チャンバと、
前記真空チャンバの側壁及び天井壁の少なくとも一方に設けられ、前記荷電粒子線照射装置に対して、外部のユーティリティ供給源から供給されるユーティリティを供給するための供給部材が取り付けられる取付部材とを備える露光システム。 - 前記真空チャンバは、前記ステージ及び前記荷電粒子線照射装置における前記荷電粒子線を射出する射出端部が収容された第1室と、前記射出端部を除く部分が収容された第2室とを有し、前記第2室に前記取付部材が設けられる請求項26に記載の露光システム。
- 前記荷電粒子線照射装置は、その外周部に設けられたフランジ部を介して前記真空チャンバの天井部から複数の柔構造の吊り下げ支持機構を介して吊り下げ支持されている請求項27に記載の露光システム。
- 前記吊り下げ支持機構は、前記天井部に固定された防振パッドと、該防振パッドに一端が接続され前記荷電粒子線照射装置の支持部材に他端が接続されたワイヤとを含む請求項28に記載の露光システム。
- 前記真空チャンバの内周部には、環状凸部が設けられ、
前記フランジ部と前記環状凸部との間に、両者を接続する伸縮自在の環状接続部が設けられ、
前記環状凸部と、前記フランジ部と、前記環状接続部とによって、前記第1室と、第2室とが区画されている請求項28又は29に記載の露光システム。 - 前記環状接続部の少なくとも一部は、金属製のベローズによって構成されている請求項30に記載の露光システム。
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JP7016969B2 (ja) | 2018-05-02 | 2022-02-07 | エーエスエムエル ネザーランズ ビー.ブイ. | 電子ビーム装置 |
US11315752B2 (en) | 2018-05-02 | 2022-04-26 | Asml Netherlands B.V. | E-beam apparatus |
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TW201643561A (zh) | 2016-12-16 |
EP3285281A1 (en) | 2018-02-21 |
CN107533956A (zh) | 2018-01-02 |
JPWO2016167339A1 (ja) | 2018-03-08 |
US20180088472A1 (en) | 2018-03-29 |
KR20170137809A (ko) | 2017-12-13 |
EP3285281A4 (en) | 2019-05-08 |
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