WO2016127647A1 - Semiconductor nano-transistor, light-emitting assembly and liquid crystal television - Google Patents

Semiconductor nano-transistor, light-emitting assembly and liquid crystal television Download PDF

Info

Publication number
WO2016127647A1
WO2016127647A1 PCT/CN2015/090293 CN2015090293W WO2016127647A1 WO 2016127647 A1 WO2016127647 A1 WO 2016127647A1 CN 2015090293 W CN2015090293 W CN 2015090293W WO 2016127647 A1 WO2016127647 A1 WO 2016127647A1
Authority
WO
WIPO (PCT)
Prior art keywords
transparent
light
tube
transparent tube
heat
Prior art date
Application number
PCT/CN2015/090293
Other languages
French (fr)
Chinese (zh)
Inventor
林杰
强科文
钟燮和
Original Assignee
深圳Tcl新技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳Tcl新技术有限公司 filed Critical 深圳Tcl新技术有限公司
Publication of WO2016127647A1 publication Critical patent/WO2016127647A1/en

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/10—Arrangement of heat-generating components to reduce thermal damage, e.g. by distancing heat-generating components from other components to be protected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Definitions

  • the present invention relates to the field of liquid crystal display technologies, and in particular, to a semiconductor nano-transistor, a light-emitting component, and a liquid crystal television.
  • QD semiconductor nanocrystals, also known as quantum dots, Quantum
  • the new application of the tube is generated.
  • the QD tube is set in the light-emitting direction of the LED light.
  • the light emitted by the LED light passes through the QD tube and becomes a high-color saturation light.
  • the QD material is easily aged due to heat.
  • the working environment temperature of the QD tube must be controlled below 90 °C, so the LED lamp configured with the QD tube must reduce the heat generation, so the number of LED lamps used must be reduced or the current flowing through the LED lamp must be reduced.
  • the LED The number of lamps used is reduced or the current through the LED lamps is reduced, and the total amount of light from the source is reduced, resulting in a multi-side input source for the product, which greatly increases the cost of the product.
  • the main object of the present invention is to provide a semiconductor nano-transistor, a light-emitting component and a liquid crystal television, which aim to solve the technical problem that the temperature of the QD tube is too high and aging, and the existing liquid crystal television has high cost for improving the color saturation product.
  • the present invention provides a semiconductor nano-transistor including a semiconductor nanocrystal, a transparent tube covering the semiconductor nanocrystal, and a transparent heat-resistant member disposed at the The light-incident side of the transparent tube, the light-incident side of the transparent tube is the side of the transparent tube facing the peripheral LED lamp, and the light emitted by the peripheral LED lamp passes through the heat-insulating member and the light-incident side wall of the transparent tube.
  • the semiconductor nanocrystal and the transparent tube penetrate the semiconductor nano-transistor with the light-emitting side tube wall of the light-incident side.
  • the transparent tube is a transparent glass tube
  • the heat blocking member is a transparent glass tube wall disposed on the light incident side of the transparent tube, and the glass tube wall is connected with the transparent tube.
  • the first insulating cavity has a vacuum inside the insulating cavity.
  • the first insulated chamber is filled with a transparent gas.
  • the glass tube wall is disposed on the light incident side of the transparent tube in a semi-enclosed structure, and the glass tube wall has a length extending in a direction along a light incident side of the transparent tube that is larger than the transparent tube. Its extension length in the direction in which the light side extends.
  • the cross section of the glass tube wall is curved.
  • the transparent tube is a transparent glass tube
  • the heat blocking member is a transparent plastic shell of a heat resistant material
  • the plastic shell is attached to the light incident side of the transparent tube.
  • the transparent tube is a transparent glass tube
  • the heat blocking member is a thickened glass wall integrated with the light incident side of the transparent tube.
  • the transparent tube is a transparent glass tube
  • the heat blocking member is a transparent plastic member disposed on the light incident side of the transparent tube
  • the plastic member is connected to the transparent tube to form a second
  • the heat insulating cavity has a vacuum or a gas with a high thermal resistance.
  • the present invention also provides a light emitting assembly comprising the above-described semiconductor nano-transistor and LED lamp, the semiconductor nano-transistor being disposed in a light-emitting direction of the LED lamp.
  • the present invention further provides a liquid crystal television, wherein the backlight module of the liquid crystal television comprises the above-mentioned light emitting component.
  • the invention provides a transparent heat-resistant member on the light-incident side of the semiconductor nano-transistor, so that the light emitted by the peripheral LED lamp can pass through the heat-insulating member, the light-incident side wall of the transparent tube, the light output of the semiconductor nano-crystal and the transparent tube.
  • the side wall so that the blue light emitted by the peripheral LED lamp becomes a white light source with high color saturation, and the heat emitted by the peripheral LED lamp is not directly transmitted from the light incident side of the semiconductor nano transistor to the light transfer side to Semiconductor nanocrystals, so that the temperature of the semiconductor nanocrystals is too high, but the heat emitted by the peripheral LED lamps is shielded from the light incident side of the semiconductor nano-transistors by heat-insulating members, and the heat surrounds the semiconductor nano-transistors from the semiconductor nano-transistors.
  • the light-incident side of the transistor is quickly dissipated into the external space by the heat dissipating device, so that the illuminating device equipped with the semiconductor nano-transistor of the invention does not need to reduce the number of LED lamps used or reduce the current flowing through the LED lamp to reduce the heat of the LED lamp.
  • the total amount of light is ensured, so that the illuminating device incorporating the semiconductor nano-transistor of the present invention does not require a multi-sided input source. Ensuring high color saturation premise, which greatly reduces the cost of the product.
  • FIG. 1 is a schematic structural view of a first embodiment of a semiconductor nano-transistor of the present invention
  • FIG. 2 is a schematic diagram of an optical path of a light emitting assembly including the semiconductor nano-transistor of FIG. 1;
  • FIG. 3 is a heat transfer model of a light emitting assembly including the semiconductor nano-transistor of FIG. 1;
  • FIG. 4 is a schematic structural view of a second embodiment of a semiconductor nano-transistor according to the present invention.
  • FIG. 5 is a schematic structural view of a third embodiment of a semiconductor nano-transistor according to the present invention.
  • FIG. 6 is a schematic structural view of a fourth embodiment of a semiconductor nano-transistor according to the present invention.
  • the semiconductor nano-transistor comprises a semiconductor nanocrystal 1, a transparent tube 2 covering the semiconductor nanocrystal 1, and a transparent heat-resistant member 3.
  • the heat-resistant member 3 is provided.
  • the light incident side A of the transparent tube 2 is the side of the transparent tube 2 facing the peripheral LED lamp 4, and the light emitted by the peripheral LED lamp 4 passes through the heat blocking member 3 and the transparent tube 2.
  • the light-emitting side A tube wall, the semiconductor nanocrystal 1 and the transparent tube 2 and the light-emitting side B tube wall facing the light-incident side A penetrate the semiconductor nano-transistor.
  • the light emitted from the peripheral LED lamp 4 can pass through the heat-insulating member 3 and the light-incident side A tube of the transparent tube 2.
  • the light incident side A of the nano-transistor is transferred to the semiconductor nanocrystal 1 by heat transfer, and the heat emitted by the peripheral LED lamp is shielded from the light-incident side A of the semiconductor nano-transistor by the heat-resisting member 3, and the heat is radiated from the semiconductor nanometer.
  • the light-emitting device with the semiconductor nano-transistor of the present invention does not need to be reduced by the light-emitting device of the semiconductor nano-transistor of the present invention, which is surrounded by the light-emitting side of the semiconductor nano-transistor and is quickly dispersed by the heat-dissipating device into the external space.
  • the number of LED lamps used or the current flowing through the LED lamps is reduced to reduce the heat of the LED lamps, and the total amount of light of the light source is ensured, so that the illuminating device equipped with the semiconductor nano-transistor of the invention does not need much Input light source, to ensure high color saturation premise, greatly reducing the cost of the product.
  • the transparent tube 2 is a transparent glass tube
  • the heat-resisting member 3 is a transparent layer disposed on the light-incident side A of the transparent tube 2.
  • the glass tube wall 31 is connected to the transparent tube 2 to form a first insulating cavity 32, and the first insulating cavity 32 is vacuumed.
  • the heat-resisting member 3 may be a glass tube wall 31 integrally formed with the transparent tube 2 made of glass tube material, and the position of the glass tube wall 31 connected to the transparent tube 2 is close to the transparent tube 2 Aside from the side of the LED lamp 4.
  • the glass tube wall 31 has an elliptical spherical structure whose major axis is perpendicular to the light emitting direction of the LED lamp 4, and the glass tube wall 31 covers more than half of the surface area of the transparent tube 2.
  • the glass tube wall 31 and the light incident side A of the transparent tube 2 form a first insulating cavity 32, and the first insulating cavity 32 is vacuumed, so that the light emitted by the peripheral LED lamp can smoothly pass from the glass tube wall 31.
  • the first insulating cavity 32 passes through to the semiconductor nano-transistor, because the first insulating cavity 32 is vacuum, that is, the medium between the light-incident side A of the transparent tube 2 and the glass tube wall 31 lacks heat transfer,
  • the heat is effectively isolated from the light incident side A of the transparent tube 2 to the semiconductor nanocrystal 1, thereby greatly increasing the heat transfer distance of the heat emitted by the peripheral LED lamp to the semiconductor nanocrystal 1, greatly reducing the transmission to
  • the heat of the semiconductor nanocrystal 1 effectively prevents the semiconductor nanocrystal 1 from aging due to excessive temperature.
  • the first insulating cavity 32 may also be filled with a transparent gas.
  • the gas is a gas having a thermal conductivity lower than 0.0233 W/m•degree, for example, at 0 ° C, the thermal conductivity is 0.0137 W/m•degree.
  • Carbon dioxide can also be used to directly separate heat from the light incident side A of the transparent tube 2 into the semiconductor nanocrystal 1.
  • the glass tube wall 31 is disposed on the light incident side A of the transparent tube 2 in a semi-enclosed structure, and the extending length of the glass tube wall 31 in the extending direction along the light incident side A of the transparent tube 2 is greater than the transparent tube 2 on the light incident side thereof.
  • the extension length of the extension direction of A further increases the distance that the heat emitted by the peripheral LED lamp passes to the light-emitting side of the semiconductor nano-transistor, thereby further reducing the heat transferred from the peripheral LED lamp to the semiconductor nanocrystal 1.
  • the cross-section of the glass tube wall 31 is curved, which is more favorable for guiding the heat emitted by the peripheral LED lamp to be transmitted away from the semiconductor nano-transistor, further reducing the heat transferred from the peripheral LED lamp to the semiconductor nanocrystal 1.
  • the transparent tube 2 is a transparent glass tube
  • the heat-resistant member 3 is a transparent plastic case 33 of a heat-resistant material
  • the plastic case 33 is attached to The light incident side A of the transparent tube 2.
  • the plastic shell 33 is wrapped around all portions of the transparent tube 2 except the light side B.
  • the heat emitted by the peripheral LED lamp 4 is not directly transmitted from the light-incident side A of the semiconductor nano-transistor to the light-transmitting side A.
  • the semiconductor nanocrystal 1 is shielded from the light-emitting side A of the semiconductor nano-transistor by the plastic shell 33, and the heat is bypassed from the light-emitting side A of the semiconductor nano-transistor outside the semiconductor nano-transistor.
  • the ground is dissipated into the external space by the heat dissipating device to prevent the temperature of the semiconductor nanocrystal 1 from being excessively aged.
  • the illuminating device equipped with the semiconductor nano-transistor of the invention does not need to reduce the number of LED lamps used or reduce the current flowing through the LED lamp to reduce the LED lamp.
  • the heat is generated, and the total amount of light of the light source is ensured, so that the illuminating device equipped with the semiconductor nano-transistor of the invention does not need a multi-side input light source, and the cost of the product is greatly reduced under the premise of ensuring high color saturation.
  • the transparent tube 2 is a transparent glass tube
  • the heat-resistant member 3 is a thickened glass wall 34 integrated with the light-incident side A of the transparent tube, preferably The closer the thickened glass wall 34 is to the position of the peripheral LED lamp 4, the greater the thickness, and the further away from the peripheral LED lamp 4, the smaller the thickness.
  • the thickness of the glass wall 34 is increased, heat generated by the peripheral LED lamp is hardly transmitted from the thickened glass wall 34 to the semiconductor nanocrystal 1 through the light incident side A of the transparent tube 2, thereby preventing the semiconductor.
  • the temperature of the nanocrystal 1 is too high, and the illuminating device equipped with the semiconductor nano-transistor of the invention does not need a multi-side input light source, and the cost of the product is greatly reduced under the premise of ensuring high color saturation.
  • the transparent tube 2 is a transparent glass tube
  • the heat-resisting member 3 is a transparent plastic member 35 disposed on the light-incident side A of the transparent tube 2
  • the plastic member 35 is connected to the transparent tube 2 to form a second insulating cavity 36.
  • the second insulating cavity 36 is vacuum or filled with gas.
  • the gas filled in the second insulating cavity 36 is a gas having a low thermal conductivity, for example, a carbon dioxide having a thermal conductivity of 0.0137 W/m•2 at a temperature of 0 ° C, thereby emitting light from the peripheral LED lamp.
  • the heat transfer medium or the good heat conductor is very effective in blocking the heat from directly passing from the light incident side A of the transparent tube 2 to the semiconductor nanocrystal 1, thereby greatly increasing the heat emitted by the peripheral LED lamp to the semiconductor nanometer.
  • the heat transfer distance of the crystal 1 greatly reduces the heat transferred to the semiconductor nanocrystal 1, and effectively prevents the semiconductor nanocrystal 1 from aging due to excessive temperature.
  • the present invention also provides a light-emitting assembly comprising the above-described semiconductor nano-transistor and an LED lamp, wherein the semiconductor nano-transistor is disposed in a light-emitting direction of the LED lamp, such that a transparent resistor is disposed on the light-incident side A of the semiconductor nano-transistor.
  • the heat element 3 so that the light emitted by the peripheral LED lamp 4 can pass through the heat blocking member 3, the light incident side A tube wall of the transparent tube 2, the semiconductor nanocrystal 1 and the light exit side B wall of the transparent tube 2, thereby making the outer
  • the light emitted by the LED lamp 4 is turned into a light source with high color saturation, and the heat generated by the peripheral LED lamp 4 is not directly transmitted to the semiconductor nanocrystal 1 by heat transfer from the light incident side A of the semiconductor nano transistor.
  • the heat emitted by the peripheral LED lamp is shielded from the light-incident side A of the semiconductor nano-transistor by the heat-resisting member 3, and the heat is surrounded by the light-emitting side A of the semiconductor nano-transistor from the outside of the semiconductor nano-transistor, and is quickly dissipated by the heat-dissipating device.
  • the light-emitting component equipped with the semiconductor nano-transistor of the invention does not need to reduce the number of LED lamps used or reduce the LE
  • the D lamp flows through the current to reduce the heat of the LED lamp, and the total amount of light of the light source is ensured, so that the light-emitting component equipped with the semiconductor nano-transistor of the invention does not need a multi-side input light source, and under the premise of ensuring high color saturation, The product cost of the light-emitting component is greatly reduced.
  • the present invention also provides a liquid crystal television, wherein the backlight module of the liquid crystal television comprises the above-mentioned light-emitting component, and the liquid crystal equipped with the light-emitting component of the invention does not need to reduce the number of LED lamps used or reduce the current flowing through the LED lamp to reduce the heat of the LED lamp.
  • the total amount of light of the light source is ensured, so that the liquid crystal television equipped with the light-emitting component of the invention does not need multi-side input light source, and the product cost of the liquid crystal television is greatly reduced under the premise of ensuring high color saturation.

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)

Abstract

Disclosed is a semiconductor nano-transistor. The semiconductor nano-transistor comprises a semiconductor nano-crystal (1), a transparent tube (2) wrapping the semiconductor nano-crystal (1), and a transparent heat-resistant member (3). The heat-resistant member (3) is arranged at a light incident side of the transparent tube (2). The light incident side of the transparent tube (2) is a side face, facing a peripheral LED lamp, of the transparent tube (2). Light rays emitted by the peripheral LED lamp penetrate through the semiconductor nano-transistor passing through the heat-resistant member (3), a light incident side tube wall of the transparent tube (2), the semiconductor nano-crystal (1) and a light emergent side tube wall, facing the light incident side, of the transparent tube (2). Also provided are a light-emitting assembly and a liquid crystal television. Heat emitted by the peripheral LED lamp is shielded outside a light incident side of the transparent tube (2) by means of the heat-resistant member (3), and ageing caused by an excessively high temperature of the semiconductor nano-crystal (1) is prevented, such that a light-emitting device provided with the semiconductor nano-transistor in the present utility model does not need multi-side input light sources, thereby greatly reducing the cost of a product on the premise of ensuring high colour saturation.

Description

半导体纳米晶体管、发光组件及液晶电视  Semiconductor nano-transistors, light-emitting components and LCD TVs
技术领域Technical field
本发明涉及液晶显示技术领域，尤其涉及一种半导体纳米晶体管、发光组件和液晶电视。The present invention relates to the field of liquid crystal display technologies, and in particular, to a semiconductor nano-transistor, a light-emitting component, and a liquid crystal television.
背景技术Background technique
随着科技的进步和经济的发展，人们对液晶电视色彩饱和度的要求越来越高，一种新型的解决方案：QD(半导体纳米晶体,又称为量子点,Quantum dot)管的新应用产生了，QD管设置在LED灯的出光方向上，LED灯发出的光穿过QD管之后变为高色彩饱和度的光，但是，一方面，由于QD材质受热容易老化，QD管的工作环境温度必须控制在90℃以下，所以导致与QD管配置的LED灯必须降低发热量，从而必须减少LED灯的使用数量或者降低流经LED灯的电流，另一方面，LED灯使用数量减少或者LED灯流经电流降低，光源的光总量降低，从而导致产品需要多侧输入光源，极大增加了产品的成本。With the advancement of technology and economic development, people are increasingly demanding the color saturation of LCD TVs. A new type of solution: QD (semiconductor nanocrystals, also known as quantum dots, Quantum) Dot) The new application of the tube is generated. The QD tube is set in the light-emitting direction of the LED light. The light emitted by the LED light passes through the QD tube and becomes a high-color saturation light. However, on the one hand, the QD material is easily aged due to heat. The working environment temperature of the QD tube must be controlled below 90 °C, so the LED lamp configured with the QD tube must reduce the heat generation, so the number of LED lamps used must be reduced or the current flowing through the LED lamp must be reduced. On the other hand, the LED The number of lamps used is reduced or the current through the LED lamps is reduced, and the total amount of light from the source is reduced, resulting in a multi-side input source for the product, which greatly increases the cost of the product.
上述内容仅用于辅助理解本发明的技术方案，并不代表承认上述内容是现有技术。The above content is only used to assist in understanding the technical solutions of the present invention, and does not constitute an admission that the above is prior art.
发明内容Summary of the invention
本发明的主要目的在于提供一种半导体纳米晶体管、发光组件和液晶电视，旨在解决QD管温度过高易老化、现有液晶电视为提高色彩饱和度产品成本高的技术问题。The main object of the present invention is to provide a semiconductor nano-transistor, a light-emitting component and a liquid crystal television, which aim to solve the technical problem that the temperature of the QD tube is too high and aging, and the existing liquid crystal television has high cost for improving the color saturation product.
为实现上述目的，本发明提供一种半导体纳米晶体管，所述半导体纳米晶体管包括半导体纳米晶体、包覆所述半导体纳米晶体的透明管，和透明的阻热件，所述阻热件设于所述透明管的入光侧，所述透明管的入光侧为该透明管面向外设LED灯的侧面，外设LED灯发出的光线经所述阻热件、透明管的入光侧管壁、半导体纳米晶体和透明管与入光侧面对的出光侧管壁而穿透所述半导体纳米晶体管。To achieve the above object, the present invention provides a semiconductor nano-transistor including a semiconductor nanocrystal, a transparent tube covering the semiconductor nanocrystal, and a transparent heat-resistant member disposed at the The light-incident side of the transparent tube, the light-incident side of the transparent tube is the side of the transparent tube facing the peripheral LED lamp, and the light emitted by the peripheral LED lamp passes through the heat-insulating member and the light-incident side wall of the transparent tube The semiconductor nanocrystal and the transparent tube penetrate the semiconductor nano-transistor with the light-emitting side tube wall of the light-incident side.
优选地，所述透明管为透明的玻璃管，所述阻热件为设于所述透明管入光侧的一层透明的玻璃管壁，且所述玻璃管壁与所述透明管连接形成第一隔热腔体，所述隔热腔体内为真空。Preferably, the transparent tube is a transparent glass tube, and the heat blocking member is a transparent glass tube wall disposed on the light incident side of the transparent tube, and the glass tube wall is connected with the transparent tube. The first insulating cavity has a vacuum inside the insulating cavity.
优选地，所述第一隔热腔体内充有透明的气体。Preferably, the first insulated chamber is filled with a transparent gas.
优选地，所述玻璃管壁呈半包围结构设于所述透明管的入光侧，且所述玻璃管壁在沿着所述透明管入光侧延伸方向的延伸长度大于所述透明管在其入光侧延伸方向的延伸长度。Preferably, the glass tube wall is disposed on the light incident side of the transparent tube in a semi-enclosed structure, and the glass tube wall has a length extending in a direction along a light incident side of the transparent tube that is larger than the transparent tube. Its extension length in the direction in which the light side extends.
优选地，所述玻璃管壁的横截面呈弧形。Preferably, the cross section of the glass tube wall is curved.
优选地，所述透明管为透明的玻璃管，所述阻热件为热阻性材料的透明塑胶壳，且该塑胶壳贴附于所述透明管的入光侧。Preferably, the transparent tube is a transparent glass tube, the heat blocking member is a transparent plastic shell of a heat resistant material, and the plastic shell is attached to the light incident side of the transparent tube.
优选地，所述透明管为透明的玻璃管，所述阻热件为与所述透明管入光侧一体化的加厚玻璃壁。Preferably, the transparent tube is a transparent glass tube, and the heat blocking member is a thickened glass wall integrated with the light incident side of the transparent tube.
优选地，所述透明管为透明的玻璃管，所述阻热件为设于所述透明管入光侧的一层透明的塑胶件，且所述塑胶件与所述透明管连接形成第二隔热腔体，所述第二隔热腔体内为真空或充有热阻值高的气体。Preferably, the transparent tube is a transparent glass tube, the heat blocking member is a transparent plastic member disposed on the light incident side of the transparent tube, and the plastic member is connected to the transparent tube to form a second The heat insulating cavity has a vacuum or a gas with a high thermal resistance.
为实现上述目的，本发明还提供一种发光组件，所述发光组件包括上述的半导体纳米晶体管和LED灯，所述半导体纳米晶体管设于所述LED灯的出光方向上。To achieve the above object, the present invention also provides a light emitting assembly comprising the above-described semiconductor nano-transistor and LED lamp, the semiconductor nano-transistor being disposed in a light-emitting direction of the LED lamp.
为实现上述目的，本发明还提供一种液晶电视，所述液晶电视的背光模组包括上述的发光组件。In order to achieve the above object, the present invention further provides a liquid crystal television, wherein the backlight module of the liquid crystal television comprises the above-mentioned light emitting component.
本发明通过在半导体纳米晶体管的入光侧设置透明的阻热件，从而外设LED灯发出的光线能够穿过阻热件、透明管的入光侧管壁、半导体纳米晶体和透明管的出光侧管壁，从而使外设LED灯发出的蓝色光变为高色彩饱和度的白色光源，且外设LED灯发出的热量不会直接从半导体纳米晶体管的入光侧通过热传递的方式传至半导体纳米晶体，而使半导体纳米晶体温度过高老化，而是通过阻热件将外设LED灯发出的热量屏蔽在半导体纳米晶体管的入光侧外，热量从半导体纳米晶体管的***绕过半导体纳米晶体管的入光侧，快速地被散热装置散至外部空间中，这样，装有本发明半导体纳米晶体管的发光设备无需减少LED灯使用数量或者降低LED灯流经电流来减少LED灯的发热，光源的光总量得到了保证，从而装有本发明半导体纳米晶体管的发光设备不需要多侧输入光源，在保证高色彩饱和度的前提下，极大降低了产品的成本。The invention provides a transparent heat-resistant member on the light-incident side of the semiconductor nano-transistor, so that the light emitted by the peripheral LED lamp can pass through the heat-insulating member, the light-incident side wall of the transparent tube, the light output of the semiconductor nano-crystal and the transparent tube. The side wall, so that the blue light emitted by the peripheral LED lamp becomes a white light source with high color saturation, and the heat emitted by the peripheral LED lamp is not directly transmitted from the light incident side of the semiconductor nano transistor to the light transfer side to Semiconductor nanocrystals, so that the temperature of the semiconductor nanocrystals is too high, but the heat emitted by the peripheral LED lamps is shielded from the light incident side of the semiconductor nano-transistors by heat-insulating members, and the heat surrounds the semiconductor nano-transistors from the semiconductor nano-transistors. The light-incident side of the transistor is quickly dissipated into the external space by the heat dissipating device, so that the illuminating device equipped with the semiconductor nano-transistor of the invention does not need to reduce the number of LED lamps used or reduce the current flowing through the LED lamp to reduce the heat of the LED lamp. The total amount of light is ensured, so that the illuminating device incorporating the semiconductor nano-transistor of the present invention does not require a multi-sided input source. Ensuring high color saturation premise, which greatly reduces the cost of the product.
附图说明DRAWINGS
图1为本发明半导体纳米晶体管第一实施例的结构示意图；1 is a schematic structural view of a first embodiment of a semiconductor nano-transistor of the present invention;
图2为包括图1中半导体纳米晶体管的发光组件的光路原理图；2 is a schematic diagram of an optical path of a light emitting assembly including the semiconductor nano-transistor of FIG. 1;
图3为包括图1中半导体纳米晶体管的发光组件的热传递模型；3 is a heat transfer model of a light emitting assembly including the semiconductor nano-transistor of FIG. 1;
图4为本发明半导体纳米晶体管第二实施例的结构示意图；4 is a schematic structural view of a second embodiment of a semiconductor nano-transistor according to the present invention;
图5为本发明半导体纳米晶体管第三实施例的结构示意图；5 is a schematic structural view of a third embodiment of a semiconductor nano-transistor according to the present invention;
图6为本发明半导体纳米晶体管第四实施例的结构示意图。FIG. 6 is a schematic structural view of a fourth embodiment of a semiconductor nano-transistor according to the present invention.
本发明目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。The implementation, functional features, and advantages of the present invention will be further described in conjunction with the embodiments.
具体实施方式detailed description
应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
本发明提供一种半导体纳米晶体管，参照图1至图6，该半导体纳米晶体管包括半导体纳米晶体1、包覆半导体纳米晶体1的透明管2，和透明的阻热件3，阻热件3设于透明管2的入光侧A，透明管2的入光侧A为该透明管2面向外设LED灯4的侧面，外设LED灯4发出的光线经阻热件3、透明管2的入光侧A管壁、半导体纳米晶体1和透明管2与入光侧A面对的出光侧B管壁而穿透半导体纳米晶体管。The present invention provides a semiconductor nano-transistor. Referring to FIG. 1 to FIG. 6, the semiconductor nano-transistor comprises a semiconductor nanocrystal 1, a transparent tube 2 covering the semiconductor nanocrystal 1, and a transparent heat-resistant member 3. The heat-resistant member 3 is provided. On the light incident side A of the transparent tube 2, the light incident side A of the transparent tube 2 is the side of the transparent tube 2 facing the peripheral LED lamp 4, and the light emitted by the peripheral LED lamp 4 passes through the heat blocking member 3 and the transparent tube 2. The light-emitting side A tube wall, the semiconductor nanocrystal 1 and the transparent tube 2 and the light-emitting side B tube wall facing the light-incident side A penetrate the semiconductor nano-transistor.
在本实施例中，通过在半导体纳米晶体管的入光侧A设置透明的阻热件3，从而外设LED灯4发出的光线能够穿过阻热件3、透明管2的入光侧A管壁、半导体纳米晶体1和透明管2的出光侧B管壁，从而使外设LED灯4发出的光变为高色彩饱和度的光，且外设LED灯4发出的热量不会直接从半导体纳米晶体管的入光侧A通过热传递的方式传至半导体纳米晶体1，而是通过阻热件3将外设LED灯发出的热量屏蔽在半导体纳米晶体管的入光侧A外，热量从半导体纳米晶体管的***绕过半导体纳米晶体管的入光侧A，快速地被散热装置散至外部空间中，以防止半导体纳米晶体1温度过高老化，这样，装有本发明半导体纳米晶体管的发光设备无需减少LED灯使用数量或者降低LED灯流经电流来减少LED灯的发热，光源的光总量得到了保证，从而装有本发明半导体纳米晶体管的发光设备不需要多侧输入光源，在保证高色彩饱和度的前提下，极大降低了产品的成本。In this embodiment, by providing a transparent heat-resistant member 3 on the light-incident side A of the semiconductor nano-transistor, the light emitted from the peripheral LED lamp 4 can pass through the heat-insulating member 3 and the light-incident side A tube of the transparent tube 2. The wall, the semiconductor nanocrystal 1 and the light-emitting side B wall of the transparent tube 2, so that the light emitted by the peripheral LED lamp 4 becomes high color saturation light, and the heat generated by the peripheral LED lamp 4 is not directly from the semiconductor The light incident side A of the nano-transistor is transferred to the semiconductor nanocrystal 1 by heat transfer, and the heat emitted by the peripheral LED lamp is shielded from the light-incident side A of the semiconductor nano-transistor by the heat-resisting member 3, and the heat is radiated from the semiconductor nanometer. The light-emitting device with the semiconductor nano-transistor of the present invention does not need to be reduced by the light-emitting device of the semiconductor nano-transistor of the present invention, which is surrounded by the light-emitting side of the semiconductor nano-transistor and is quickly dispersed by the heat-dissipating device into the external space. The number of LED lamps used or the current flowing through the LED lamps is reduced to reduce the heat of the LED lamps, and the total amount of light of the light source is ensured, so that the illuminating device equipped with the semiconductor nano-transistor of the invention does not need much Input light source, to ensure high color saturation premise, greatly reducing the cost of the product.
进一步地，在本发明半导体纳米晶体管第一实施例中，参照图1至图3，透明管2为透明的玻璃管，阻热件3为设于透明管2入光侧A的一层透明的玻璃管壁31，且玻璃管壁31与透明管2连接形成第一隔热腔体32，第一隔热腔体32内为真空。在本实施例中，阻热件3可以为与玻璃管材质的透明管2一体成型的玻璃管壁31，所述玻璃管壁31与所述透明管2相连接的位置靠近所述透明管2的远离所述LED灯4的一侧。所述玻璃管壁31大致呈长轴垂直于所述LED灯4的出光方向的椭圆状球体结构，所述玻璃管壁31包覆所述透明管2的表面积的一半以上。玻璃管壁31与透明管2的入光侧A形成第一隔热腔体32，该第一隔热腔体32为真空，这样，外设LED灯发出的光线可以顺利地从玻璃管壁31和第一隔热腔体32穿过传至半导体纳米晶体管，由于第一隔热腔体32为真空，即透明管2的入光侧A与玻璃管壁31之间缺少热传递的介质，十分有效地隔绝了热量直接从透明管2的入光侧A传至半导体纳米晶体1中，从而大大增加了外设LED灯发出的热量传至半导体纳米晶体1的热传递距离，大大减少了传至半导体纳米晶体1的热量，有效防止半导体纳米晶体1因温度过高而老化。Further, in the first embodiment of the semiconductor nano-transistor of the present invention, referring to FIG. 1 to FIG. 3, the transparent tube 2 is a transparent glass tube, and the heat-resisting member 3 is a transparent layer disposed on the light-incident side A of the transparent tube 2. The glass tube wall 31 is connected to the transparent tube 2 to form a first insulating cavity 32, and the first insulating cavity 32 is vacuumed. In the present embodiment, the heat-resisting member 3 may be a glass tube wall 31 integrally formed with the transparent tube 2 made of glass tube material, and the position of the glass tube wall 31 connected to the transparent tube 2 is close to the transparent tube 2 Aside from the side of the LED lamp 4. The glass tube wall 31 has an elliptical spherical structure whose major axis is perpendicular to the light emitting direction of the LED lamp 4, and the glass tube wall 31 covers more than half of the surface area of the transparent tube 2. The glass tube wall 31 and the light incident side A of the transparent tube 2 form a first insulating cavity 32, and the first insulating cavity 32 is vacuumed, so that the light emitted by the peripheral LED lamp can smoothly pass from the glass tube wall 31. And the first insulating cavity 32 passes through to the semiconductor nano-transistor, because the first insulating cavity 32 is vacuum, that is, the medium between the light-incident side A of the transparent tube 2 and the glass tube wall 31 lacks heat transfer, The heat is effectively isolated from the light incident side A of the transparent tube 2 to the semiconductor nanocrystal 1, thereby greatly increasing the heat transfer distance of the heat emitted by the peripheral LED lamp to the semiconductor nanocrystal 1, greatly reducing the transmission to The heat of the semiconductor nanocrystal 1 effectively prevents the semiconductor nanocrystal 1 from aging due to excessive temperature.
此外，第一隔热腔体32中也可以充有透明的气体，优选该气体为导热系数低于0.0233瓦/米•度的气体，例如0摄氏度时，导热系数为0.0137瓦/米•度的二氧化碳，也可以较好地隔离热量直接从透明管2的入光侧A传至半导体纳米晶体1中。In addition, the first insulating cavity 32 may also be filled with a transparent gas. Preferably, the gas is a gas having a thermal conductivity lower than 0.0233 W/m•degree, for example, at 0 ° C, the thermal conductivity is 0.0137 W/m•degree. Carbon dioxide can also be used to directly separate heat from the light incident side A of the transparent tube 2 into the semiconductor nanocrystal 1.
优选地，玻璃管壁31呈半包围结构设于透明管2的入光侧A，玻璃管壁31在沿着透明管2入光侧A延伸方向的延伸长度大于透明管2在其入光侧A延伸方向的延伸长度，进一步增大了外设LED灯发出的热量传至半导体纳米晶体管出光侧的距离，从而进一步减少了从外设LED灯传至半导体纳米晶体1的热量。Preferably, the glass tube wall 31 is disposed on the light incident side A of the transparent tube 2 in a semi-enclosed structure, and the extending length of the glass tube wall 31 in the extending direction along the light incident side A of the transparent tube 2 is greater than the transparent tube 2 on the light incident side thereof. The extension length of the extension direction of A further increases the distance that the heat emitted by the peripheral LED lamp passes to the light-emitting side of the semiconductor nano-transistor, thereby further reducing the heat transferred from the peripheral LED lamp to the semiconductor nanocrystal 1.
优选地，玻璃管壁31的横截面呈弧形，更有利于引导外设LED灯发出的热量向远离半导体纳米晶体管方向传递，进一步减少了从外设LED灯传至半导体纳米晶体1的热量。Preferably, the cross-section of the glass tube wall 31 is curved, which is more favorable for guiding the heat emitted by the peripheral LED lamp to be transmitted away from the semiconductor nano-transistor, further reducing the heat transferred from the peripheral LED lamp to the semiconductor nanocrystal 1.
此外，在本发明半导体纳米晶体管第二实施例中，参照图4，透明管2为透明的玻璃管，阻热件3为热阻性材料的透明塑胶壳33，且该塑胶壳33贴附于透明管2的入光侧A。优选地，塑胶壳33包覆于透明管2除出光侧B以外的所有部位。In addition, in the second embodiment of the semiconductor nano-transistor of the present invention, referring to FIG. 4, the transparent tube 2 is a transparent glass tube, the heat-resistant member 3 is a transparent plastic case 33 of a heat-resistant material, and the plastic case 33 is attached to The light incident side A of the transparent tube 2. Preferably, the plastic shell 33 is wrapped around all portions of the transparent tube 2 except the light side B.
在本实施例中，通过在半导体纳米晶体管的入光侧A设置透明塑胶壳33，从而外设LED灯4发出的热量不会直接从半导体纳米晶体管的入光侧A通过热传递的方式传至半导体纳米晶体1，而是通过塑胶壳33将外设LED灯发出的热量屏蔽在半导体纳米晶体管的入光侧A外，热量从半导体纳米晶体管的***绕过半导体纳米晶体管的入光侧A，快速地被散热装置散至外部空间中，以防止半导体纳米晶体1温度过高老化，这样，装有本发明半导体纳米晶体管的发光设备无需减少LED灯使用数量或者降低LED灯流经电流来减少LED灯的发热，光源的光总量得到了保证，从而装有本发明半导体纳米晶体管的发光设备不需要多侧输入光源，在保证高色彩饱和度的前提下，极大降低了产品的成本。In this embodiment, by providing the transparent plastic shell 33 on the light incident side A of the semiconductor nano-transistor, the heat emitted by the peripheral LED lamp 4 is not directly transmitted from the light-incident side A of the semiconductor nano-transistor to the light-transmitting side A. The semiconductor nanocrystal 1 is shielded from the light-emitting side A of the semiconductor nano-transistor by the plastic shell 33, and the heat is bypassed from the light-emitting side A of the semiconductor nano-transistor outside the semiconductor nano-transistor. The ground is dissipated into the external space by the heat dissipating device to prevent the temperature of the semiconductor nanocrystal 1 from being excessively aged. Thus, the illuminating device equipped with the semiconductor nano-transistor of the invention does not need to reduce the number of LED lamps used or reduce the current flowing through the LED lamp to reduce the LED lamp. The heat is generated, and the total amount of light of the light source is ensured, so that the illuminating device equipped with the semiconductor nano-transistor of the invention does not need a multi-side input light source, and the cost of the product is greatly reduced under the premise of ensuring high color saturation.
此外，在本发明半导体纳米晶体管第三实施例中，参照图5，透明管2为透明的玻璃管，阻热件3为与透明管入光侧A一体化的加厚玻璃壁34，优选地，加厚玻璃壁34越靠近外设LED灯4的位置厚度越大、越远离外设LED灯4的位置厚度越小。在本实施例中，由于玻璃壁34的厚度增大，外设LED灯所发出的热量很难从加厚玻璃壁34经透明管2的入光侧A传递至半导体纳米晶体1，从而防止半导体纳米晶体1温度过高老化，进而装有本发明半导体纳米晶体管的发光设备不需要多侧输入光源，在保证高色彩饱和度的前提下，极大降低了产品的成本。In addition, in the third embodiment of the semiconductor nano-transistor of the present invention, referring to FIG. 5, the transparent tube 2 is a transparent glass tube, and the heat-resistant member 3 is a thickened glass wall 34 integrated with the light-incident side A of the transparent tube, preferably The closer the thickened glass wall 34 is to the position of the peripheral LED lamp 4, the greater the thickness, and the further away from the peripheral LED lamp 4, the smaller the thickness. In the present embodiment, since the thickness of the glass wall 34 is increased, heat generated by the peripheral LED lamp is hardly transmitted from the thickened glass wall 34 to the semiconductor nanocrystal 1 through the light incident side A of the transparent tube 2, thereby preventing the semiconductor. The temperature of the nanocrystal 1 is too high, and the illuminating device equipped with the semiconductor nano-transistor of the invention does not need a multi-side input light source, and the cost of the product is greatly reduced under the premise of ensuring high color saturation.
此外，在本发明半导体纳米晶体管第四实施例中，参照图6，透明管2为透明的玻璃管，阻热件3为设于透明管2入光侧A的一层透明的塑胶件35，且塑胶件35与透明管2连接形成第二隔热腔体36，第二隔热腔体36内为真空或充有气体。在本实施例中，第二隔热腔体36中充有的气体为导热系数低的气体，例如0摄氏度时，导热系数为0.0137瓦/米•度的二氧化碳，从而外设LED灯发出的光线可以顺利地从塑胶件35和第二隔热腔体36穿过传至半导体纳米晶体管，由于第二隔热腔体36为真空，即透明管2的入光侧A与塑胶件35之间缺少热传递的介质或者不是热的良导体，十分有效地阻隔了热量直接从透明管2的入光侧A传至半导体纳米晶体1中，从而大大增加了外设LED灯发出的热量传至半导体纳米晶体1的热传递距离，大大减少了传至半导体纳米晶体1的热量，有效防止半导体纳米晶体1因温度过高而老化。In addition, in the fourth embodiment of the semiconductor nano-transistor of the present invention, referring to FIG. 6, the transparent tube 2 is a transparent glass tube, and the heat-resisting member 3 is a transparent plastic member 35 disposed on the light-incident side A of the transparent tube 2, The plastic member 35 is connected to the transparent tube 2 to form a second insulating cavity 36. The second insulating cavity 36 is vacuum or filled with gas. In the present embodiment, the gas filled in the second insulating cavity 36 is a gas having a low thermal conductivity, for example, a carbon dioxide having a thermal conductivity of 0.0137 W/m•2 at a temperature of 0 ° C, thereby emitting light from the peripheral LED lamp. It can be smoothly passed from the plastic member 35 and the second insulating cavity 36 to the semiconductor nano-transistor. Since the second insulating cavity 36 is vacuum, that is, the light-injecting side A of the transparent tube 2 is missing from the plastic member 35. The heat transfer medium or the good heat conductor is very effective in blocking the heat from directly passing from the light incident side A of the transparent tube 2 to the semiconductor nanocrystal 1, thereby greatly increasing the heat emitted by the peripheral LED lamp to the semiconductor nanometer. The heat transfer distance of the crystal 1 greatly reduces the heat transferred to the semiconductor nanocrystal 1, and effectively prevents the semiconductor nanocrystal 1 from aging due to excessive temperature.
此外，本发明还一种发光组件，该发光组件包括上述半导体纳米晶体管和LED灯，半导体纳米晶体管设于LED灯的出光方向上，这样，通过在半导体纳米晶体管的入光侧A设置透明的阻热件3，从而外设LED灯4发出的光线能够穿过阻热件3、透明管2的入光侧A管壁、半导体纳米晶体1和透明管2的出光侧B管壁，从而使外设LED灯4发出的光变为高色彩饱和度的光源，且外设LED灯4发出的热量不会直接从半导体纳米晶体管的入光侧A通过热传递的方式传至半导体纳米晶体1，而是通过阻热件3将外设LED灯发出的热量屏蔽在半导体纳米晶体管的入光侧A外，热量从半导体纳米晶体管的***绕过半导体纳米晶体管的入光侧A，快速地被散热装置散至外部空间中，以防止半导体纳米晶体1温度过高老化，这样，装有本发明半导体纳米晶体管的发光组件无需减少LED灯使用数量或者降低LED灯流经电流来减少LED灯的发热，光源的光总量得到了保证，从而装有本发明半导体纳米晶体管的发光组件不需要多侧输入光源，在保证高色彩饱和度的前提下，极大降低了发光组件的产品成本。In addition, the present invention also provides a light-emitting assembly comprising the above-described semiconductor nano-transistor and an LED lamp, wherein the semiconductor nano-transistor is disposed in a light-emitting direction of the LED lamp, such that a transparent resistor is disposed on the light-incident side A of the semiconductor nano-transistor. The heat element 3, so that the light emitted by the peripheral LED lamp 4 can pass through the heat blocking member 3, the light incident side A tube wall of the transparent tube 2, the semiconductor nanocrystal 1 and the light exit side B wall of the transparent tube 2, thereby making the outer The light emitted by the LED lamp 4 is turned into a light source with high color saturation, and the heat generated by the peripheral LED lamp 4 is not directly transmitted to the semiconductor nanocrystal 1 by heat transfer from the light incident side A of the semiconductor nano transistor. The heat emitted by the peripheral LED lamp is shielded from the light-incident side A of the semiconductor nano-transistor by the heat-resisting member 3, and the heat is surrounded by the light-emitting side A of the semiconductor nano-transistor from the outside of the semiconductor nano-transistor, and is quickly dissipated by the heat-dissipating device. Into the external space, to prevent the semiconductor nanocrystal 1 from being over-aged, so that the light-emitting component equipped with the semiconductor nano-transistor of the invention does not need to reduce the number of LED lamps used or reduce the LE The D lamp flows through the current to reduce the heat of the LED lamp, and the total amount of light of the light source is ensured, so that the light-emitting component equipped with the semiconductor nano-transistor of the invention does not need a multi-side input light source, and under the premise of ensuring high color saturation, The product cost of the light-emitting component is greatly reduced.
此外，本发明还一种液晶电视，该液晶电视的背光模组包括上述的发光组件，装有本发明发光组件的液晶无需减少LED灯使用数量或者降低LED灯流经电流来减少LED灯的发热，光源的光总量得到了保证，从而装有本发明发光组件的液晶电视不需要多侧输入光源，在保证高色彩饱和度的前提下，极大降低了液晶电视的产品成本。In addition, the present invention also provides a liquid crystal television, wherein the backlight module of the liquid crystal television comprises the above-mentioned light-emitting component, and the liquid crystal equipped with the light-emitting component of the invention does not need to reduce the number of LED lamps used or reduce the current flowing through the LED lamp to reduce the heat of the LED lamp. The total amount of light of the light source is ensured, so that the liquid crystal television equipped with the light-emitting component of the invention does not need multi-side input light source, and the product cost of the liquid crystal television is greatly reduced under the premise of ensuring high color saturation.
以上仅为本发明的优选实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。The above are only the preferred embodiments of the present invention, and are not intended to limit the scope of the invention, and the equivalent structure or equivalent process transformations made by the description of the present invention and the drawings are directly or indirectly applied to other related technical fields. The same is included in the scope of patent protection of the present invention.

Claims (20)

  1. 一种半导体纳米晶体管，其特征在于，所述半导体纳米晶体管包括半导体纳米晶体、包覆所述半导体纳米晶体的透明管，和透明的阻热件，所述阻热件设于所述透明管的入光侧，所述透明管的入光侧为该透明管面向外设LED灯的侧面，外设LED灯发出的光线经所述阻热件、透明管的入光侧管壁、半导体纳米晶体和透明管与入光侧面对的出光侧管壁而穿透所述半导体纳米晶体管。 A semiconductor nano-transistor, comprising: a semiconductor nanocrystal, a transparent tube covering the semiconductor nanocrystal, and a transparent heat-resistant member, wherein the heat-insulating member is disposed on the transparent tube On the light-in side, the light-incident side of the transparent tube is the side of the transparent tube facing the peripheral LED lamp, and the light emitted by the peripheral LED lamp passes through the heat-insulating member, the light-incident side wall of the transparent tube, and the semiconductor nanocrystal. And the transparent nanotube and the light-emitting side tube wall of the light-incident side face penetrate the semiconductor nano-transistor.
  2. 如权利要求1所述的半导体纳米晶体管，其特征在于，所述透明管为透明的玻璃管，所述阻热件为设于所述透明管入光侧的一层透明的玻璃管壁，且所述玻璃管壁与所述透明管连接形成第一隔热腔体，所述隔热腔体内为真空。The semiconductor nano-transistor of claim 1 , wherein the transparent tube is a transparent glass tube, and the heat blocking member is a transparent glass tube wall disposed on the light incident side of the transparent tube, and The glass tube wall is connected to the transparent tube to form a first heat insulating cavity, and the heat insulating cavity is a vacuum.
  3. 如权利要求2所述的半导体纳米晶体管，其特征在于，所述第一隔热腔体内充有透明的气体。The semiconductor nano-transistor of claim 2 wherein said first insulating cavity is filled with a transparent gas.
  4. 如权利要求3所述的半导体纳米晶体管，其特征在于，所述玻璃管壁呈半包围结构设于所述透明管的入光侧，且所述玻璃管壁在沿着所述透明管入光侧延伸方向的延伸长度大于所述透明管在其入光侧延伸方向的延伸长度。The semiconductor nano-transistor according to claim 3, wherein the glass tube wall is disposed on the light incident side of the transparent tube in a semi-enclosed structure, and the glass tube wall enters the light along the transparent tube The extension length of the side extension direction is greater than the extension length of the transparent tube in the direction in which the light incident side extends.
  5. 如权利要求4所述的半导体纳米晶体管，其特征在于，所述玻璃管壁的横截面呈弧形。The semiconductor nano-transistor of claim 4 wherein said glass tube wall has an arcuate cross section.
  6. 如权利要求2所述的半导体纳米晶体管，其特征在于，所述玻璃管壁呈半包围结构设于所述透明管的入光侧，且所述玻璃管壁在沿着所述透明管入光侧延伸方向的延伸长度大于所述透明管在其入光侧延伸方向的延伸长度。The semiconductor nano-transistor according to claim 2, wherein the glass tube wall is disposed on the light incident side of the transparent tube in a semi-enclosed structure, and the glass tube wall enters the light along the transparent tube The extension length of the side extension direction is greater than the extension length of the transparent tube in the direction in which the light incident side extends.
  7. 如权利要求6所述的半导体纳米晶体管，其特征在于，所述玻璃管壁的横截面呈弧形。The semiconductor nano-transistor of claim 6 wherein said glass tube wall has an arcuate cross section.
  8. 如权利要求1所述的半导体纳米晶体管，其特征在于，所述透明管为透明的玻璃管，所述阻热件为热阻性材料的透明塑胶壳，且该塑胶壳贴附于所述透明管的入光侧。The semiconductor nano-transistor of claim 1 , wherein the transparent tube is a transparent glass tube, the heat-resistant member is a transparent plastic shell of a heat-resistant material, and the plastic shell is attached to the transparent The light entering side of the tube.
  9. 如权利要求1所述的半导体纳米晶体管，其特征在于，所述透明管为透明的玻璃管，所述阻热件为与所述透明管入光侧一体化的加厚玻璃壁。The semiconductor nano-transistor according to claim 1, wherein the transparent tube is a transparent glass tube, and the heat blocking member is a thickened glass wall integrated with the light incident side of the transparent tube.
  10. 如权利要求1所述的半导体纳米晶体管，其特征在于，所述透明管为透明的玻璃管，所述阻热件为设于所述透明管入光侧的一层透明的塑胶件，且所述塑胶件与所述透明管连接形成第二隔热腔体，所述第二隔热腔体内为真空或充有热阻值高的气体。The semiconductor nano-transistor according to claim 1, wherein the transparent tube is a transparent glass tube, and the heat-insulating member is a transparent plastic member disposed on the light-incident side of the transparent tube. The plastic member is connected to the transparent tube to form a second insulating cavity, and the second insulating cavity is vacuum or filled with a gas having a high thermal resistance.
  11. 一种发光组件，其特征在于，所述发光组件包括LED灯和设于所述LED灯的出光方向上的半导体纳米晶体管，所述半导体纳米晶体管包括封闭的透明管、封装于所述透明管内的半导体纳米晶体以及设于所述透明管外侧的阻热件，所述阻热件至少设于所述透明管的朝向所述LED灯的一侧。A light-emitting assembly, comprising: an LED lamp; and a semiconductor nano-transistor disposed in a light-emitting direction of the LED lamp, the semiconductor nano-transistor comprising a closed transparent tube and being encapsulated in the transparent tube a semiconductor nanocrystal and a heat blocking member disposed outside the transparent tube, wherein the heat blocking member is disposed at least on a side of the transparent tube facing the LED lamp.
  12. 如权利要求11所述的发光组件，其特征在于，所述阻热件包覆所述透明管的表面积的一半以上。The lighting assembly of claim 11 wherein said heat resistant member covers more than half of a surface area of said transparent tube.
  13. 如权利要求12所述的发光组件，其特征在于，所述阻热件为与所述透明管连接为一体的透明的玻璃管壁，所述玻璃管壁与所述透明管相连接的位置靠近所述透明管的远离所述LED灯的一侧，所述玻璃管壁与所述透明管的表面之间形成第一隔热腔体。A lighting assembly according to claim 12, wherein said heat blocking member is a transparent glass tube wall integrally connected with said transparent tube, said glass tube wall being adjacent to said transparent tube A side of the transparent tube remote from the LED lamp forms a first insulating cavity between the glass tube wall and a surface of the transparent tube.
  14. 如权利要求13所述的发光组件，其特征在于，所述玻璃管壁大致呈长轴垂直于所述LED灯的出光方向的椭圆状球体结构。The lighting assembly of claim 13 wherein said glass tube wall has an elliptical spherical structure having a major axis that is perpendicular to a direction of light exiting said LED lamp.
  15. 如权利要求13所述的发光组件，其特征在于，所述第一隔热腔体内为真空。The lighting assembly of claim 13 wherein said first insulated chamber is vacuum.
  16. 如权利要求11所述的发光组件，其特征在于，所述透明管为透明的玻璃管，所述阻热件为热阻性材料的透明塑胶壳，且该塑胶壳贴附于所述透明管的朝向所述LED灯的一侧。The light emitting module according to claim 11, wherein the transparent tube is a transparent glass tube, the heat blocking member is a transparent plastic case of a heat resistant material, and the plastic case is attached to the transparent tube. The side facing the LED light.
  17. 如权利要求11所述的发光组件，其特征在于，所述透明管为透明的玻璃管，所述阻热件为于所述透明管的朝向所述LED灯的一侧一体设置的加厚玻璃壁。The illuminating assembly according to claim 11, wherein the transparent tube is a transparent glass tube, and the heat blocking member is a thickened glass integrally provided on a side of the transparent tube facing the LED lamp. wall.
  18. 如权利要求17所述的发光组件，其特征在于，所述阻热件包覆所述透明管的表面积的一半或一半以上。A lighting assembly according to claim 17, wherein said heat blocking member covers half or more of a surface area of said transparent tube.
  19. 如权利要求11所述的发光组件，其特征在于，所述透明管为透明的玻璃管，所述阻热件为设于所述透明管入光侧的一层透明的塑胶件，且所述塑胶件与所述透明管连接形成第二隔热腔体，所述第二隔热腔体内为真空或充有热阻值高的气体。The illuminating assembly according to claim 11, wherein the transparent tube is a transparent glass tube, and the heat blocking member is a transparent plastic member disposed on the light incident side of the transparent tube, and the The plastic member is connected to the transparent tube to form a second insulating cavity, and the second insulating cavity is vacuum or filled with a gas having a high thermal resistance.
  20. 一种液晶电视，其特征在于，所述液晶电视的背光模组包括如权利要求11所述的发光组件。A liquid crystal television, characterized in that the backlight module of the liquid crystal television comprises the lighting assembly of claim 11.
PCT/CN2015/090293 2015-02-15 2015-09-22 Semiconductor nano-transistor, light-emitting assembly and liquid crystal television WO2016127647A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201520112330.X 2015-02-15
CN201520112330.XU CN204441293U (en) 2015-02-15 2015-02-15 Semiconductor nanocrystal pipe, luminescence component and LCD TV

Publications (1)

Publication Number Publication Date
WO2016127647A1 true WO2016127647A1 (en) 2016-08-18

Family

ID=53609125

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2015/090293 WO2016127647A1 (en) 2015-02-15 2015-09-22 Semiconductor nano-transistor, light-emitting assembly and liquid crystal television

Country Status (2)

Country Link
CN (1) CN204441293U (en)
WO (1) WO2016127647A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106526981A (en) * 2016-10-28 2017-03-22 深圳市华星光电技术有限公司 Temperature-control alignment device based on multi-model glass

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN204441293U (en) * 2015-02-15 2015-07-01 深圳Tcl新技术有限公司 Semiconductor nanocrystal pipe, luminescence component and LCD TV

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101520569A (en) * 2008-02-29 2009-09-02 南京汉德森科技股份有限公司 Power chip type LED light source for LCD backlight module
JP3173760U (en) * 2011-12-08 2012-02-16 世頂企業有限公司 Improved LED backlight module
CN202182365U (en) * 2011-08-08 2012-04-04 创维液晶器件(深圳)有限公司 LED light strip, side light type backlight module and display
CN103090277A (en) * 2013-01-30 2013-05-08 深圳市华星光电技术有限公司 Backlight module and liquid crystal display device
CN203337958U (en) * 2013-07-26 2013-12-11 京东方科技集团股份有限公司 Backlight module and display device
CN204441293U (en) * 2015-02-15 2015-07-01 深圳Tcl新技术有限公司 Semiconductor nanocrystal pipe, luminescence component and LCD TV

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101520569A (en) * 2008-02-29 2009-09-02 南京汉德森科技股份有限公司 Power chip type LED light source for LCD backlight module
CN202182365U (en) * 2011-08-08 2012-04-04 创维液晶器件(深圳)有限公司 LED light strip, side light type backlight module and display
JP3173760U (en) * 2011-12-08 2012-02-16 世頂企業有限公司 Improved LED backlight module
CN103090277A (en) * 2013-01-30 2013-05-08 深圳市华星光电技术有限公司 Backlight module and liquid crystal display device
CN203337958U (en) * 2013-07-26 2013-12-11 京东方科技集团股份有限公司 Backlight module and display device
CN204441293U (en) * 2015-02-15 2015-07-01 深圳Tcl新技术有限公司 Semiconductor nanocrystal pipe, luminescence component and LCD TV

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106526981A (en) * 2016-10-28 2017-03-22 深圳市华星光电技术有限公司 Temperature-control alignment device based on multi-model glass
US10488695B2 (en) 2016-10-28 2019-11-26 Shenzhen China Star Optoelectronics Technology Co., Ltd. Temperature-controlled alignment device based on multi-model glass technology

Also Published As

Publication number Publication date
CN204441293U (en) 2015-07-01

Similar Documents

Publication Publication Date Title
WO2012008692A2 (en) Display device
WO2014134850A1 (en) Lamp bulb of high-efficiency energy-saving led street lamp
WO2012128552A2 (en) Light conversion member and display device having the same
EP2734894A1 (en) Display device
WO2016127647A1 (en) Semiconductor nano-transistor, light-emitting assembly and liquid crystal television
WO2013009037A2 (en) Display device and optical member
WO2018233199A1 (en) Led, backlight module, and liquid crystal display device
CN104834159B (en) A kind of video camera and the infrared lamp fixed seat for the video camera
WO2013039317A2 (en) Led lighting engine adopting an icicle type diffusion unit
WO2017156902A1 (en) Quantum dot backlight module and liquid crystal television
WO2015196963A1 (en) Rapid heat dissipation luminous decay-proof mixed gas and integrated heat dissipation led lamp
WO2019000783A1 (en) Led, backlight module, and liquid crystal display device
WO2018137313A1 (en) Light source device
WO2017166345A1 (en) Backlight module and liquid crystal display device
WO2016015428A1 (en) Heat sink, backlight module and display module
WO2013012173A1 (en) Optical member and display device having the same
WO2015176595A1 (en) Hybrid optical integrator component and optical system comprising same
TW201324970A (en) Electronic device and joint
WO2016161788A1 (en) Liquid crystal display module
WO2021133122A1 (en) Quantum dot complex and display apparatus including the same
CN105757481A (en) Cooling type LED lamp
TWM496722U (en) Waterproof and explosion-proof LED lamp
CN106996521A (en) Desk-top LED lamp based on adjusting light intensity
WO2018201814A1 (en) Backlight module and display device
TWI237154B (en) Projector and lamp housing thereof

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15881797

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: COMMUNICATION PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 15/01/2018)

122 Ep: pct application non-entry in european phase

Ref document number: 15881797

Country of ref document: EP

Kind code of ref document: A1