WO2016127608A1 - Ogs触摸屏及其制造方法、ogs触摸装置 - Google Patents

Ogs触摸屏及其制造方法、ogs触摸装置 Download PDF

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Publication number
WO2016127608A1
WO2016127608A1 PCT/CN2015/086474 CN2015086474W WO2016127608A1 WO 2016127608 A1 WO2016127608 A1 WO 2016127608A1 CN 2015086474 W CN2015086474 W CN 2015086474W WO 2016127608 A1 WO2016127608 A1 WO 2016127608A1
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Prior art keywords
ito
array
substrate
layer
ito array
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PCT/CN2015/086474
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English (en)
French (fr)
Inventor
马涛
黄寅虎
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京东方科技集团股份有限公司
合肥鑫晟光电科技有限公司
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Priority to EP15881765.0A priority Critical patent/EP3258351B1/en
Priority to US14/906,347 priority patent/US9886124B2/en
Publication of WO2016127608A1 publication Critical patent/WO2016127608A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • the present invention relates to the field of touch screen technologies, and in particular, to an OGS touch screen, a method of manufacturing the same, and an OGS touch device.
  • the OGS (One Glass Solution) touch screen is an electronic product protection screen made by directly forming an ITO (Indium Tin Oxide) touch electrode and a sensor on a glass substrate, which is a protective glass. It is also a touch sensor.
  • ITO Indium Tin Oxide
  • the portion of the OGS touch screen having the ITO touch electrode is different from the portion without the ITO touch electrode, and the pattern of the ITO touch electrode appears on the OGS touch screen, affecting the product. Appearance.
  • the difference between the portion having the ITO touch electrode on the OGS touch screen and the portion having no ITO touch electrode is eliminated by superimposing the IM (Index Matching) layer and the ITO touch electrode.
  • an IM layer is formed on the glass substrate; a black matrix is formed on the glass substrate on which the IM layer is formed; a metal layer is formed on the glass substrate on which the black matrix is formed; and OC is formed on the glass substrate on which the metal layer is formed Cover, upper layer covering layer; forming an ITO touch electrode on the glass substrate on which the OC layer is formed, and adjusting the IM layer by optical simulation software, so that the reflectance of the IM layer and the ITO layer is consistent with the reflectance of the IM layer.
  • the appearance of the pattern of the ITO touch electrodes on the OGS touch screen is eliminated.
  • the appearance of the pattern of the ITO touch electrodes on the OGS touch screen is eliminated by plating the IM layer on the glass substrate, but the plating of the IM layer makes the manufacturing cost of the OGS touch screen high.
  • the present invention provides an OGS touch screen, a manufacturing method thereof, and an OGS touch device.
  • an OGS touch screen comprising: a substrate; a first poly-indium tin oxide p-ITO array on the display area of the substrate, the first p-ITO array comprising a plurality of first p-ITO touch electrodes arranged along a length direction of the substrate; And a second p-ITO array disposed on the first p-ITO array, the second p-ITO array including a plurality of second p-ITO touch electrodes arranged along a length direction of the substrate, The spacing of any two adjacent first p-ITO touch electrodes in the first p-ITO array is less than the spacing of any two adjacent second p-ITO touch electrodes in the second p-ITO array.
  • the first p-ITO array is a p-ITO array formed by etching using an etching solution including aqua regia; and the second p-ITO array is formed by etching using an etching solution including oxalic acid.
  • the OGS touch screen further includes: a black matrix disposed in a peripheral region of the substrate; a metal layer disposed on the substrate on which the black matrix is formed; and an upper layer disposed on the substrate on which the metal layer is formed a cover layer, the first p-ITO array being disposed on the upper cover layer.
  • the first p-ITO array includes a plurality of first p-ITO touch electrodes arranged at equal intervals along the length direction of the substrate
  • the second p-ITO array includes a plurality of lengths along the substrate A second p-ITO touch electrode arranged at equal intervals in the direction.
  • the first p-ITO touch electrode has the same shape as the second p-ITO touch electrode and the center of the projection of the second p-ITO touch electrode on the first p-ITO touch electrode is The centers of the first p-ITO touch electrodes coincide.
  • a method of fabricating an OGS touch screen comprising: forming a first p-ITO array in a display region of a substrate, and forming on a substrate on which the first p-ITO array is formed a second p-ITO array, wherein the first p-ITO array includes a plurality of first p-ITO touch electrodes arranged along a length direction of the substrate, and the second p-ITO array includes a plurality of edges a second p-ITO touch electrode arranged in the longitudinal direction of the substrate, wherein a spacing of any two adjacent p-ITO touch electrodes in the first p-ITO array is smaller than any two of the second p-ITO arrays The spacing of adjacent second p-ITO touch electrodes.
  • the first p-ITO array includes a plurality of first p-ITO touch electrodes arranged at equal intervals along the length direction of the substrate
  • the second p-ITO array includes a plurality of lengths along the substrate A second p-ITO touch electrode arranged at equal intervals in the direction.
  • the method further includes: forming a black matrix in a peripheral region of the substrate; forming a metal layer on the substrate on which the black matrix is formed; And forming an upper cladding layer on the substrate on which the metal layer is formed, the step of forming the first p-ITO array in the display region of the substrate comprising: forming the display region in the display region of the substrate on which the upper cladding layer is formed The first p-ITO array.
  • the step of forming a first p-ITO array on a display region of the substrate on which the upper cladding layer is formed and forming a second p-ITO array on the substrate on which the first p-ITO array is formed includes: forming a p-ITO layer on a substrate on which the upper cladding layer is formed; forming an a-ITO layer on the substrate on which the p-ITO layer is formed; and performing a first patterning process on the a-ITO layer Forming an a-ITO array, the a-ITO array comprising a plurality of a-ITO touch electrodes arranged along a length direction of the substrate; performing a second patterning process on the p-ITO layer to form the first p- An ITO array; and subjecting the a-ITO array to a high temperature annealing process to convert the a-ITO array into a second p-ITO array.
  • the step of performing the first patterning process on the a-ITO layer to form the a-ITO array comprises: exposing the a-ITO layer with light of a first exposure intensity using a mask.
  • the step of performing a second patterning process on the p-ITO layer to form the first p-ITO array includes: exposing the p-ITO layer with light of a second exposure intensity using the mask layer, The second exposure intensity is less than the first exposure intensity.
  • the etching solution used in the first patterning process includes oxalic acid
  • the etching liquid used in the second patterning process includes aqua regia
  • the step of forming a p-ITO layer on the substrate on which the upper cladding layer is formed comprises: plating a p-ITO layer on the substrate on which the upper cladding layer is formed under high temperature conditions
  • the step of forming an a-ITO layer on the substrate on which the p-ITO layer is formed includes: plating an a-ITO layer on the substrate on which the p-ITO layer is formed under low temperature conditions.
  • the high temperature condition has a temperature ranging from 200 degrees Celsius to 250 degrees Celsius
  • the low temperature condition has a temperature ranging from 20 degrees Celsius to 40 degrees Celsius.
  • an OGS touch device comprising: an OGS touch screen according to the first aspect of the invention.
  • the invention provides an OGS touch screen and a manufacturing method thereof, and an OGS touch device, wherein a first p-ITO array is formed on a display area on a substrate, and a second p-ITO array is formed on the first p-ITO array.
  • the first p-ITO array includes a first p-ITO touch electrode arranged along a length direction of the substrate
  • the second The p-ITO array includes a second p-ITO touch electrode arranged along the length direction of the substrate, and the spacing of any two adjacent first p-ITO touch electrodes in the first p-ITO array is smaller than the second p-ITO
  • the spacing between any two adjacent second p-ITO touch electrodes in the array is such that the film thickness of the portion of the substrate having the p-ITO array transitioning to the portion without the p-ITO array is stepwise reduced, and the substrate has
  • the difference in chromatic aberration and reflectance at the junction of the portion of the p-ITO array and the portion without the p-ITO array becomes smaller, and the external appearance of the portion having the p-ITO array on the substrate and the portion without the p-ITO array is reduced.
  • the difference is that there is no need to re-impose the IM layer. Therefore, on
  • FIG. 1 is a schematic structural diagram of an OGS touch screen according to a first embodiment of the present invention
  • FIG. 2 is a schematic structural diagram of an OGS touch screen according to a second embodiment of the present invention.
  • FIG. 3 is a flow chart of a method for manufacturing an OGS touch screen according to a third embodiment of the present invention.
  • FIG. 4 is a flow chart of a method of manufacturing an OGS touch screen according to a fourth embodiment of the present invention.
  • FIG. 1 is a schematic structural diagram of a cross section of an OGS touch screen 00 according to a first embodiment of the present invention.
  • the OGS touch screen 00 provided by the first embodiment of the present invention may include a substrate 001.
  • a first p-ITO (polycrystalline silicon-) may be formed on the display region of the substrate 001.
  • the ITO, polysilicon-indium tin oxide array 002, the first p-ITO array 002 may include a plurality of first p-ITO touch electrodes 0021 arranged along the length direction x of the substrate 001.
  • a second p-ITO array 003 may be formed on the first p-ITO array 002, and the second p-ITO array 003 may include a plurality of second p-ITO touch electrodes 0031 arranged along the length direction x of the substrate 001, first The pitch of any two adjacent first p-ITO touch electrodes 0021 in the p-ITO array 002 is smaller than the pitch of any two adjacent second p-ITO touch electrodes 0031 in the second p-ITO array 003, for example, As shown in FIG. 1, the first distance a is smaller than the second distance b.
  • a first p-ITO array is formed on the display area on the substrate, and a second p-ITO array is formed on the first p-ITO array.
  • the first p-ITO array includes a first p-ITO touch electrode arranged along a length direction of the substrate, the second p-ITO array including a second p-ITO touch electrode arranged along a length direction of the substrate, and the The spacing between any two adjacent first p-ITO touch electrodes in the first p-ITO array is smaller than the spacing between any two adjacent second p-ITO touch electrodes in the second p-ITO array, such that there is
  • the film thickness of the portion of the p-ITO array that transitions to the portion without the p-ITO array decreases stepwise, and the color difference and reflection at the junction of the portion of the substrate having the p-ITO array and the portion without the p-ITO array The difference in rate is reduced, and the
  • the plurality of p-ITO touch electrodes 0021 in FIG. 1 may be arranged at equal intervals along the length direction x of the substrate 001. In this case, any two adjacent first ones of the first p-ITO array 002 The pitch of the p-ITO touch electrodes 0021 is equal.
  • the plurality of p-ITO touch electrodes 0031 in FIG. 1 may be arranged at equal intervals along the length direction x of the substrate 001. In this case, any two adjacent second p-ITOs in the second p-ITO array 003 The pitch of the touch electrodes 0031 is equal.
  • the plurality of p-ITO touch electrodes in the first p-ITO array 002 and the second p-ITO array 003 may include: a plurality of vertically insulated insulating electrodes (also referred to as Rx sensing electrodes) or a plurality of levels Insulated transmission electrode (also called Tx transmission electrode).
  • a plurality of vertically insulated insulating electrodes also referred to as Rx sensing electrodes
  • Tx transmission electrode also called Tx transmission electrode.
  • the OGS touch screen in the first embodiment of the present invention is made by a single layer of ITO (Single ITO) technology, and the first p-ITO array 002 and the second p-ITO array 003 are stacked to form a whole ITO.
  • the layer, the monolithic ITO layer can be considered as a single layer of ITO in a single layer ITO technology.
  • the second p-ITO array 003 in Figure 1 can be formed by the following method: under low temperature conditions After etching an etchant solution including oxalic acid to form an a-ITO (amorphous silicon-indium tin oxide) array (not shown in FIG. 1), the a-ITO array is converted into a second by an annealing process. p-ITO array.
  • the temperature of the low temperature condition may range from 20 degrees Celsius to 40 degrees Celsius.
  • Oxalic acid is also known as oxalic acid.
  • the formation of the a-ITO array by etching with an etching solution including oxalic acid under low temperature conditions may include sequentially applying a photoresist, exposing with a mask, developing with a developing solution, and etching with an etching solution including oxalic acid.
  • the first patterning process of stripping the photoresist.
  • an a-ITO array including a plurality of a-ITO touch electrodes (not shown in FIG. 1) arranged along the length direction x of the substrate 001 can be obtained, for example, the plurality of a-ITO touches
  • the electrodes may be arranged at equal intervals along the length direction x of the substrate 001.
  • the spacing of any two adjacent a-ITO touch electrodes in the a-ITO array is equal, for example, the second distance b.
  • the a-ITO array may be subjected to a high temperature annealing process to convert the a-ITO array into a second p-ITO array 003, the second p-ITO array.
  • the spacing between any two adjacent p-ITO touch electrodes 0031 in 003 is the second distance b.
  • the first p-ITO array 002 in FIG. 1 may be a p-ITO array formed by etching with an etching solution including aqua regia under high temperature conditions.
  • the temperature range of the high temperature condition may be 200 degrees Celsius to 250 degrees Celsius
  • the aqua regia is also called "wang acid” or “nitrohydrochloric acid”, which is a very corrosive liquid with a yellow mist, and the aqua regia is thick.
  • forming the first p-ITO array 002 by etching with an etching solution including aqua regia under high temperature conditions may include sequentially performing photoresist coating, exposure using a mask, development using a developing solution, and utilization including aqua regia.
  • the etching solution is etched and the second patterning process of the photoresist is stripped.
  • a first p-ITO array 002 including a plurality of p-ITO touch electrodes 0021 arranged along the length direction x of the substrate 001, any two of the first p-ITO arrays 002, can be obtained
  • the pitch of adjacent p-ITO touch electrodes 0021 is smaller than the pitch of any two adjacent p-ITO touch electrodes 0031 in the second p-ITO array 003.
  • the mask used in the exposure may be the same, and the exposure intensity used in the exposure using the mask in the first patterning process may be It is larger than the exposure intensity used when the mask is used for exposure in the second patterning process.
  • using the same mask in the first patterning process and the second patterning process can save the amount of the mask and avoid the waste of the mask, thereby saving the manufacturing cost of the OGS touch screen. Since the exposure intensity used in the exposure using the mask in the first patterning process is greater than the exposure intensity used in the exposure using the same mask in the second patterning process, the development and engraving are performed.
  • the pitch of any two adjacent a-ITO touch electrodes in the a-ITO array formed after the etch and photoresist stripping is greater than the pitch of any two adjacent p-ITO touch electrodes 0021 in the p-ITO array 002.
  • a second embodiment of the present invention provides an OGS touch screen 01, which may include: a substrate 001; a black matrix 004 disposed in a peripheral region of the substrate 001; A metal layer 005 disposed on the substrate 001 of the black matrix 004; an upper layer (OC) layer 006 disposed on the substrate 001 on which the metal layer 005 is formed; and a first p-ITO array 002 located on the OC layer 006.
  • a black matrix 004 can be formed in a peripheral region of the substrate 001.
  • FIG. 2 is a schematic structural view of a cross section of a peripheral region of the OGS touch panel 01.
  • the black matrix 004, the metal layer 005, and the OC layer 006 may be sequentially performed by three patterning processes, and each patterning process may include sequentially performing photoresist coating, exposure using a mask, development using a developer, and etching. The patterning process in which the liquid is etched. It should be noted that the black matrix 004, the metal layer 005, and the OC layer 006 can also be obtained by other patterning processes, which is not limited by the embodiment of the present invention. In particular, there is no black matrix in the cross-sectional structure of the display area of the OGS touch screen. For the structure of other levels, reference may be made to FIG. 2, which is not described in detail in the embodiment of the present invention.
  • the mask used for performing the exposure may be the same, and the mask is used in the first patterning process and the second patterning process.
  • the position may be unchanged, such that the p-ITO touch electrode 0021 (ie, the first p-ITO touch electrode) in the first p-ITO array 002 and the p-ITO touch electrode in the second p-ITO array 003 0031 (ie, the second p-ITO touch electrode) has the same shape, and the center of the projection of the second p-ITO touch electrode on the first p-ITO touch electrode coincides with the center of the first p-ITO touch electrode, so that The distribution of the plurality of first p-ITO touch electrodes and the plurality of second p-ITO touch electrodes on the OGS screen is made more uniform, so that the appearance of the OGS screen is more flat.
  • the shape of the first p-ITO touch electrode and the second p-ITO touch electrode may be a diamond shape or an irregular polygon.
  • the center of the projection of the second p-ITO touch electrode on the first p-ITO touch electrode may not coincide with the center of the first p-ITO touch electrode, which is not limited in this embodiment of the present invention. .
  • the appearance of the pattern of the ITO touch electrodes on the OGS touch screen is eliminated by forming an IM layer on the substrate.
  • the OGS touch screen provided by the embodiment of the present invention, there is no need to form an IM layer on the substrate, and the thickness of the first p-ITO array and the second p-ITO array in the embodiment of the present invention is superimposed with the ITO touch in the prior art.
  • the thickness of the electrodes can be equal, which can reduce the thickness of the OGS touch screen on the basis of eliminating the appearance of the ITO touch electrode pattern on the OGS touch screen.
  • the second p-ITO The touch electrode is located on the first p-ITO touch electrode, and the first p-ITO touch electrode and the second p-ITO touch electrode have the same thickness, which is equal to half of the thickness of the ITO touch electrode in the prior art.
  • a first p-ITO array is formed on a display area on a substrate, and a second p-ITO array is formed on the first p-ITO array, and the The first p-ITO array includes a p-ITO touch electrode arranged along a length direction of the substrate, the second p-ITO array including a p-ITO touch electrode arranged along a length direction of the substrate, and the first p-ITO array
  • the spacing between any two adjacent p-ITO touch electrodes is smaller than the spacing of any two adjacent p-ITO touch electrodes in the second p-ITO array, so that the portion of the substrate having the p-ITO array is p-ITO-free
  • the film thickness of the partial transition of the array is stepwise reduced, and the difference in chromatic aberration and reflectance between the portion having the p-ITO array on the substrate and the portion without the p-ITO array is reduced, and the substrate has a
  • the third embodiment of the present invention further provides a method for manufacturing an OGS touch screen, which is suitable for the visible area manufacturing of an OGS touch screen, and the visible area may include a peripheral area and a display area.
  • the manufacturing method of the OGS touch screen may include step 301 and step 302.
  • step 301 a first p-ITO array is formed on the display area of the substrate.
  • the first p-ITO array can include a plurality of first p-ITO touch electrodes arranged along the length of the substrate.
  • a plurality of p-ITO touch electrodes in the first p-ITO array may be arranged at equal intervals along the length of the substrate.
  • the spacing between any two adjacent p-ITO touch electrodes in the first p-ITO array is a first distance, which is not limited in the embodiment of the present invention.
  • step 302 a second p-ITO array is formed on the substrate on which the first p-ITO array is formed.
  • the second p-ITO array may include a plurality of second p-ITO touch electrodes arranged along the length direction of the substrate, and any two adjacent second p-ITO touch electrodes of the second p-ITO array The pitch is greater than the spacing of any two adjacent first p-ITO touch electrodes in the first p-ITO array.
  • a plurality of p-ITO touch electrodes in the second p-ITO array may be arranged at equal intervals along the length of the substrate.
  • the spacing between any two adjacent second p-ITO touch electrodes in the second p-ITO array is a second distance, and the second distance is greater than the first distance, which is not limited by the embodiment of the present invention. .
  • a first p-ITO array is formed on a display area on a substrate, and a second p-ITO is formed on the first p-ITO array.
  • the first p-ITO array includes a first p-ITO touch electrode arranged along a length direction of the substrate
  • the second The p-ITO array includes a second p-ITO touch electrode arranged along the length direction of the substrate, and the spacing of any two adjacent p-ITO touch electrodes in the first p-ITO array is smaller than that in the second p-ITO array
  • the spacing between any two adjacent p-ITO touch electrodes is such that the film thickness of the portion of the substrate having the p-ITO array transitioning to the portion without the p-ITO array is stepwise reduced, and the p-ITO array is on the substrate.
  • the difference in chromatic aberration and reflectance at the junction between the portion and the portion without the p-ITO array becomes smaller, reducing the difference in external appearance of the portion having the p-ITO array on the substrate and the portion having no p-ITO array, and There is no need to plate the IM layer. Therefore, on the basis of eliminating the appearance of the ITO touch electrode pattern on the OGS touch screen, the manufacturing cost of the OGS touch screen is reduced.
  • the method for manufacturing the OGS touch screen may further include: forming a black matrix in a peripheral region of the substrate; forming a metal layer on the substrate on which the black matrix is formed; forming an OC layer on the substrate on which the metal layer is formed; .
  • Step 301 can include forming a first p-ITO array in a display region of the substrate on which the OC layer is formed.
  • the step 301 and the step 302 may specifically include: forming a p-ITO layer on the substrate on which the OC layer is formed; forming an a-ITO layer on the substrate on which the p-ITO layer is formed; The ITO layer is subjected to a first patterning process to form an a-ITO array.
  • the a-ITO array includes a plurality of a-ITO touch electrodes arranged along the length direction of the substrate; and the second patterning process is performed on the formed p-ITO layer to form a first a p-ITO array; a high temperature annealing process on the a-ITO array converts the a-ITO array into a second p-ITO array.
  • the a-ITO layer and the p-ITO layer are exposed using the same mask.
  • Performing the first patterning process on the formed a-ITO layer to form the a-ITO array may include exposing the a-ITO layer with light of a first exposure intensity using a mask.
  • Performing a second patterning process on the formed p-ITO layer to form the first p-ITO array may include: exposing the p-ITO layer with light of a second exposure intensity using a mask, the second exposure intensity being greater than the first exposure strength.
  • the etching solution used includes oxalic acid
  • the etching liquid used includes aqua regia
  • Forming the p-ITO layer on the substrate on which the OC layer is formed may include: plating a p-ITO layer on the substrate on which the OC layer is formed under high temperature conditions.
  • Forming the a-ITO layer on the substrate on which the p-ITO layer is formed may include: plating the a-ITO layer on the substrate on which the p-ITO layer is formed under low temperature conditions.
  • the temperature range of the high temperature condition is 200 degrees Celsius to 250 degrees Celsius
  • the temperature range of the low temperature condition is 20 degrees Celsius to 40 degrees Celsius.
  • the display region forms a first p-ITO array, and a second p-ITO array is formed on the first p-ITO array, and the first p-ITO array includes a first p-ITO touch electrode arranged along a length direction of the substrate
  • the second p-ITO array includes a second p-ITO touch electrode arranged along the length direction of the substrate, and the spacing of any two adjacent first p-ITO touch electrodes in the first p-ITO array is smaller than the second
  • the spacing between any two adjacent second p-ITO touch electrodes in the two p-ITO arrays causes the film thickness of the portion of the substrate having the p-ITO array to transition to the portion without the p-ITO array to decrease stepwise.
  • the difference in chromatic aberration and reflectance at the junction of the portion having the p-ITO array on the substrate and the portion having no p-ITO array becomes smaller, and the portion having the p-ITO array on the substrate and the portion without the p-ITO array are reduced.
  • Part of the difference in external appearance, and no need to re-impose the IM layer therefore, on the basis of eliminating the appearance of the ITO touch electrode pattern on the OGS touch screen, the manufacturing cost of the OGS touch screen is reduced.
  • a fourth embodiment of the present invention provides a method of manufacturing an OGS touch screen, which is suitable for the manufacture of a visible area of an OGS touch screen, the visible area including a peripheral area and a display area.
  • the manufacturing method of the OGS touch screen may include the following steps 401 to 408.
  • step 401 a black matrix is formed in a peripheral region of the substrate.
  • a black matrix layer may be coated on a peripheral region on the substrate, and sequentially coated with a photoresist, exposed using a mask, developed with a developing solution, etched with an etching solution, and stripped with a photoresist.
  • a black matrix is formed in a peripheral region of the substrate. It should be noted that, in the method for forming a black matrix in the peripheral region of the substrate in the embodiment of the present invention, reference may be made to the method for forming a black matrix in the peripheral region of the substrate in the prior art, which is not described in detail in the embodiments of the present invention.
  • step 402 a metal layer is formed on the substrate on which the black matrix is formed.
  • a metal layer may be formed on the black matrix formed in step 401 by deposition, coating or sputtering.
  • a metal layer may be formed on the black matrix formed in step 401 by other means.
  • the embodiment of the invention does not limit this.
  • the metal layer can include a metal bridge and a perimeter metal wiring. There is no limit here.
  • step 403 an OC layer is formed on the substrate on which the metal layer is formed.
  • An OC layer is formed on the metal layer formed in step 402, and the OC layer can protect the peripheral metal wiring and the metal bridge in the metal layer.
  • a method of forming an OC layer on a substrate on which a metal layer is formed may be referred to a method of forming a black matrix in a peripheral region of the substrate, which will not be described in detail in the embodiments of the present invention.
  • step 404 a p-ITO layer is formed on the substrate on which the OC layer is formed.
  • the temperature range of the high temperature condition may be 200 degrees Celsius to 250 degrees Celsius, and the temperature range of the high temperature condition may be other temperature ranges, which is not limited by the embodiment of the present invention.
  • step 405 an a-ITO layer is formed on the substrate on which the p-ITO layer is formed.
  • the a-ITO layer may be plated on the substrate on which the p-ITO layer is formed by deposition, coating or sputtering under low temperature conditions.
  • the temperature range of the low temperature condition may be 20 degrees Celsius.
  • the temperature range of the low temperature condition may be other temperature ranges, which is not limited in the embodiment of the present invention.
  • step 406 the formed a-ITO layer is subjected to a first patterning process to form an a-ITO array, and the a-ITO array includes a plurality of a-ITO touch electrodes arranged along the length direction of the substrate.
  • the a-ITO layer formed in step 405 may be subjected to a first patterning process to form an a-ITO array.
  • the first patterning process may include sequentially applying photoresist, exposing with a mask, and developing with a developing solution. Etching with an etching solution, stripping of a photoresist, and the like. It should be noted that, in the first patterning process, the first exposure intensity light is used for exposing the a-ITO layer using the mask, and the etching is performed when etching with the etching solution.
  • the etchant may include oxalic acid, which is capable of etching away the a-ITO layer not coated with the photoresist, but oxalic acid cannot etch away the p-ITO layer under the a-ITO layer, thereby avoiding the first
  • the p-ITO layer under the a-ITO layer is etched away in the sub-patterning process.
  • the a-ITO array obtained after the first patterning process may include a plurality of a-ITO touch electrodes arranged along the length direction of the substrate.
  • a plurality of a-ITO touch electrodes in the a-ITO array may be arranged at equal intervals along the length of the substrate.
  • the spacing between any two adjacent a-ITO touch electrodes in the a-ITO array is a second distance, which is not limited in the embodiment of the present invention.
  • step 407 a second patterning process is performed on the formed p-ITO layer to form a first p-ITO array.
  • a second patterning process may be performed on the p-ITO layer formed in step 404 to form a first p-ITO array, and the second patterning process may include sequentially applying photoresist, using a mask for exposure, and developing The liquid is developed, etched with an etching solution, and stripped of a photoresist or the like.
  • the mask used in the second patterning process is the same as the mask used in the first patterning process, which can save the amount of the mask and avoid the waste of the mask, thereby saving money. OGS touch screen manufacturing costs.
  • the p-ITO layer is exposed to light using a second exposure intensity, and the second exposure intensity is less than the first exposure intensity, so that development, etching, and The spacing between any two adjacent a-ITO touch electrodes in the a-ITO array formed after the photoresist stripping is greater than The spacing of any two adjacent p-ITO touch electrodes in the first p-ITO array obtained in the secondary patterning process.
  • the etching liquid used may include aqua regia, and aqua regia can etch away the a-ITO layer and the p-ITO layer. Since in the second patterning process, a portion of the p-ITO layer and the a-ITO array formed in step 406 are coated with photolithography after being coated with a photoresist, exposed using a mask, and developed with a developer.
  • the first p-ITO array obtained after the second patterning process may include a plurality of p-ITO touch electrodes arranged along the length direction of the substrate, and any two adjacent ones of the first p-ITO arrays The pitch of the p-ITO touch electrodes is smaller than the pitch of any two adjacent a-ITO touch electrodes in the a-ITO array.
  • a plurality of p-ITO touch electrodes in the first p-ITO array may be arranged at equal intervals along the length direction of the substrate, and the pitch may be, for example, a first distance.
  • the shape of the p-ITO touch electrode may be a diamond shape or an irregular polygon.
  • the p-ITO touch electrode may have other shapes, which is not limited in the embodiment of the present invention.
  • step 408 the a-ITO array is subjected to a high temperature annealing process to convert the a-ITO array into a second p-ITO array.
  • the a-ITO array formed in step 406 can be converted into a second p-ITO array by a high temperature annealing process, in which case the second p-ITO array includes a plurality of rows arranged along the length of the substrate.
  • a second p-ITO touch electrode wherein when the plurality of a-ITO touch electrodes in the a-ITO array formed in step 406 are equally spaced along the length direction of the substrate, the second p-ITO array obtained in step 408
  • the plurality of p-ITO touch electrodes are also arranged at equal intervals along the length direction of the substrate.
  • the high temperature annealing process of the a-ITO array converts the a-ITO array into the second p-ITO array, so that the refractive indices of the first p-ITO array and the second p-ITO array are the same.
  • the first p-ITO array and the plurality of p-ITO touch electrodes in the second p-ITO array in the embodiment of the present invention may include: a plurality of vertically insulated insulating electrodes (also referred to as Rx sensing electrodes) or a plurality of An insulated transmission electrode (also called a Tx transmission electrode) in the horizontal direction.
  • the metal bridge in the metal layer formed in step 402 can be used to connect the plurality of horizontally-oriented transmission electrodes through which signals can be transmitted between the plurality of horizontally-oriented transmission electrodes.
  • the mask used in performing the exposure may be the same, and in the first patterning process and the second patterning.
  • the position of the mask in the process can be unchanged, so that the step 408 is shaped by the step 406.
  • a pattern of the p-ITO touch electrode ie, the second p-ITO touch electrode
  • the first p-ITO array formed in step 407 The shape of the p-ITO touch electrode (ie, the first p-ITO touch electrode) is the same, and the center of the projection of the second p-ITO touch electrode on the first p-ITO touch electrode and the center of the first p-ITO touch electrode
  • the coincidence can make the distribution of the plurality of first p-ITO touch electrodes and the plurality of second p-ITO touch electrodes more uniform on the OGS screen, so that the appearance of the OGS screen is more flat.
  • the shape of the first p-ITO touch electrode and the second p-ITO touch electrode may be a diamond shape or an irregular polygon.
  • the center of the projection of the second p-ITO touch electrode on the first p-ITO touch electrode may not coincide with the center of the first p-ITO touch electrode, which is not limited in this embodiment of the present invention. .
  • the appearance of the pattern of the ITO touch electrodes on the OGS touch screen is eliminated by forming an IM layer on the substrate.
  • the OGS touch screen provided by the embodiment of the present invention does not need to form an IM layer on the substrate, and the thickness of the first p-ITO array and the second p-ITO array in the embodiment of the present invention is superimposed on the ITO touch electrode in the prior art.
  • the thicknesses can be equal, which can reduce the thickness of the OGS touch screen on the basis of eliminating the appearance of the ITO touch electrode pattern on the OGS touch screen.
  • the second p-ITO touch electrode is located on the first p-ITO touch electrode, and the first p-ITO touch electrode and the second p-ITO touch electrode have the same thickness, which are equal to the existing single-layer ITO technology. Half the thickness of a single layer of ITO.
  • a first p-ITO array is formed on a display area on a substrate, and a second p-ITO is formed on the first p-ITO array.
  • An array, and the first p-ITO array includes a p-ITO touch electrode arranged along a length direction of the substrate, the second p-ITO array including a p-ITO touch electrode arranged along a length direction of the substrate, and the first p - the spacing of any two adjacent p-ITO touch electrodes in the ITO array is smaller than the spacing of any two adjacent p-ITO touch electrodes in the second p-ITO array, such that the partial orientation of the p-ITO array on the substrate
  • the film thickness of the partial transition without the p-ITO array decreases stepwise, and the difference in chromatic aberration and reflectance at the junction of the portion having the p-ITO array on the substrate and the portion without the p-ITO array becomes smaller, and the difference is reduced.
  • An embodiment of the present invention further provides an OGS touch device, which may include the OGS touch screen shown in FIG. 1 or FIG.
  • a first p-ITO array is formed on a display area on a substrate, and a second p-ITO array is formed on the first p-ITO array.
  • the first A p-ITO array includes a p-ITO touch electrode arranged along a length direction of the substrate, the second p-ITO array including a p-ITO touch electrode arranged along a length direction of the substrate, and any of the first p-ITO arrays
  • the spacing between two adjacent p-ITO touch electrodes is smaller than the spacing of any two adjacent p-ITO touch electrodes in the second p-ITO array, such that a portion of the substrate having a p-ITO array is oriented to a p-ITO-free array
  • the film thickness of the partial transition is stepwise reduced, and the difference in chromatic aberration and reflectance at the junction of the portion having the p-ITO array on the substrate and the portion having no p-ITO
  • the OGS touch screen is lowered. manufacturing cost.

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Abstract

一种OGS触摸屏（00，01）及其制造方法、OGS触摸装置。所述OGS触摸屏（00，01）包括：基板（001）；设置在基板（001）的显示区上的第一p-ITO阵列（002），第一p-ITO阵列（002）包括多个第一p-ITO触摸电极（0021）；以及设置在第一p-ITO阵列（002）上的第二p-ITO阵列（003），第二p-ITO阵列（003）包括多个第二p-ITO触摸电极（0031），第一p-ITO阵列（002）中任意两个相邻的第一p-ITO触摸电极（0021）的间距小于第二p-ITO阵列（003）中任意两个相邻的第二p-ITO触摸电极（0031）的间距。在消除OGS触摸屏上ITO触摸电极图案的显现的基础上降低了OGS触摸屏的制造成本。

Description

OGS触摸屏及其制造方法、OGS触摸装置 技术领域
本发明涉及触摸屏技术领域，特别涉及OGS触摸屏及其制造方法、OGS触摸装置。
背景技术
触摸屏作为一种智能化的人机交互界面产品，已经在生产和生活中得到了广泛的应用。OGS(One Glass Solution，一体化触控)触摸屏是利用在玻璃基板上直接形成ITO(Indium Tin Oxide，氧化铟锡)触摸电极及传感器的技术制作的电子产品保护屏，该玻璃基板既是保护玻璃，也是触摸传感器。但是由于OGS触摸屏上的ITO触摸电极的厚度较大，使得OGS触摸屏上有ITO触摸电极的部分与没有ITO触摸电极的部分差异较大，在该OGS触摸屏上会显现ITO触摸电极的图案，影响产品的外观。
现有技术中，采用IM(Index Matching，折射率匹配)层与ITO触摸电极进行叠加的方式消除OGS触摸屏上有ITO触摸电极的部分与没有ITO触摸电极的部分的差异。具体的，在玻璃基板上形成IM层；在形成有IM层的玻璃基板上形成黑矩阵；在形成有黑矩阵的玻璃基板上形成金属层；在形成有金属层的玻璃基板上形成OC(Over Cover，上层覆盖)层；在形成有OC层的玻璃基板上形成ITO触摸电极，并通过光学模拟软件调整IM层，使得IM层与ITO层叠加后的反射率与IM层的反射率相一致，消除了该OGS触摸屏上的ITO触摸电极的图案的显现。
现有技术中，通过在玻璃基板上镀制IM层，消除了OGS触摸屏上的ITO触摸电极的图案的显现，但IM层的镀制使得OGS触摸屏的制造成本较高。
发明内容
为了解决OGS触摸屏的制造成本较高的问题，本发明提供了一种OGS触摸屏及其制造方法、OGS触摸装置。
根据本发明的第一方面，提供了一种OGS触摸屏，其包括：基板；设置在 所述基板的显示区上的第一多晶硅-氧化铟锡p-ITO阵列，所述第一p-ITO阵列包括多个沿所述基板长度方向排布的第一p-ITO触摸电极；以及设置在所述第一p-ITO阵列上的第二p-ITO阵列，所述第二p-ITO阵列包括多个沿所述基板长度方向排布的第二p-ITO触摸电极，所述第一p-ITO阵列中任意两个相邻的第一p-ITO触摸电极的间距小于所述第二p-ITO阵列中任意两个相邻的第二p-ITO触摸电极的间距。
可选的，所述第一p-ITO阵列是采用包括王水的刻蚀液刻蚀形成的p-ITO阵列；所述第二p-ITO阵列是采用包括草酸的刻蚀液刻蚀形成非晶硅-氧化铟锡a-ITO阵列后对所述a-ITO阵列进行退火工艺转化得到的p-ITO阵列。
可选的，OGS触摸屏还包括：设置在所述基板的周边区的黑矩阵；设置在形成有所述黑矩阵的基板上的金属层；以及设置在形成有所述金属层的基板上的上层覆盖层，所述第一p-ITO阵列设置在所述上层覆盖层上。
可选的，所述第一p-ITO阵列包括多个沿所述基板长度方向等间距排布的第一p-ITO触摸电极，所述第二p-ITO阵列包括多个沿所述基板长度方向等间距排布的第二p-ITO触摸电极。
可选的，第一p-ITO触摸电极与第二p-ITO触摸电极的形状相同且所述第二p-ITO触摸电极在所述第一p-ITO触摸电极上的投影的中心与所述第一p-ITO触摸电极的中心重合。
根据本发明的第二方面，提供了一种OGS触摸屏的制造方法，其包括：在基板的显示区形成第一p-ITO阵列，以及在形成有所述第一p-ITO阵列的基板上形成第二p-ITO阵列，其中，所述第一p-ITO阵列包括多个沿所述基板长度方向排布的第一p-ITO触摸电极，所述第二p-ITO阵列包括多个沿所述基板长度方向排布的第二p-ITO触摸电极，所述第一p-ITO阵列中任意两个相邻的p-ITO触摸电极的间距小于所述第二p-ITO阵列中任意两个相邻的第二p-ITO触摸电极的间距。
可选的，所述第一p-ITO阵列包括多个沿所述基板长度方向等间距排布的第一p-ITO触摸电极，所述第二p-ITO阵列包括多个沿所述基板长度方向等间距排布的第二p-ITO触摸电极。
可选的，在基板的显示区形成第一p-ITO阵列之前，所述方法还包括：在所述基板的周边区形成黑矩阵；在形成有所述黑矩阵的基板上形成金属层；以 及在形成有所述金属层的基板上形成上层覆盖层，所述在基板的显示区形成第一p-ITO阵列的步骤包括：在形成有所述上层覆盖层的基板的显示区形成所述第一p-ITO阵列。
可选的，所述在形成有所述上层覆盖层的基板的显示区形成第一p-ITO阵列和在形成有所述第一p-ITO阵列的基板上形成第二p-ITO阵列的步骤包括：在形成有所述上层覆盖层的基板上形成p-ITO层；在形成有所述p-ITO层的基板上形成a-ITO层；对所述a-ITO层进行第一次构图工艺形成a-ITO阵列，所述a-ITO阵列包括多个沿所述基板长度方向排布的a-ITO触摸电极；对所述p-ITO层进行第二次构图工艺形成所述第一p-ITO阵列；以及对所述a-ITO阵列进行高温退火工艺，使所述a-ITO阵列转化为第二p-ITO阵列。
可选的，在所述第一次构图工艺中对所述a-ITO层进行曝光和在所述第二次构图工艺中对所述p-ITO层进行曝光采用同一掩膜板。
可选的，所述对所述a-ITO层进行第一次构图工艺形成a-ITO阵列的步骤包括：使用掩膜板采用第一曝光强度的光对所述a-ITO层进行曝光，所述对所述p-ITO层进行第二次构图工艺形成所述第一p-ITO阵列的步骤包括：使用所述掩膜板采用第二曝光强度的光对所述p-ITO层进行曝光，所述第二曝光强度小于所述第一曝光强度。
可选的，在第一次构图工艺中所采用的刻蚀液包括草酸，在第二次构图工艺中所采用的刻蚀液包括王水。
可选的，所述在形成有所述上层覆盖层的基板上形成p-ITO层的步骤包括：在高温条件下，在形成有所述上层覆盖层的基板上镀制p-ITO层，在形成有所述p-ITO层的基板上形成a-ITO层的步骤包括:在低温条件下，在形成有所述p-ITO层的基板上镀制a-ITO层。
可选的，所述高温条件的温度范围为200摄氏度至250摄氏度，所述低温条件的温度范围为20摄氏度至40摄氏度。
根据本发明的第三方面，提供了一种OGS触摸装置，其包括：根据本发明的第一方面的OGS触摸屏。
本发明提供了一种OGS触摸屏及其制造方法、OGS触摸装置，在基板上的显示区形成有第一p-ITO阵列，在该第一p-ITO阵列上形成有第二p-ITO阵列，且该第一p-ITO阵列包括沿基板长度方向排布的第一p-ITO触摸电极，该第二 p-ITO阵列包括沿基板长度方向排布的第二p-ITO触摸电极，且该第一p-ITO阵列中任意两个相邻的第一p-ITO触摸电极的间距小于第二p-ITO阵列中任意两个相邻的第二p-ITO触摸电极的间距，使得基板上有p-ITO阵列的部分向无p-ITO阵列的部分过渡的膜厚呈阶梯状减小，则基板上有p-ITO阵列的部分与无p-ITO阵列的部分在相接处的色差和反射率差异变小，减小了基板上有p-ITO阵列的部分与无p-ITO阵列的部分的对外显现的差异，且无需再镀制IM层，因此，在消除OGS触摸屏上的ITO触摸电极图案的显现的基础上，降低了OGS触摸屏的制造成本。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并不能限制本发明。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明第一实施例提供的一种OGS触摸屏的结构示意图；
图2是本发明第二实施例提供的一种OGS触摸屏的结构示意图；
图3是本发明第三实施例提供的一种OGS触摸屏的制造方法的流程图；
图4是本发明第四实施例提供的一种OGS触摸屏的制造方法的流程图。
通过上述附图，已示出本发明的示例性实施例，后文中将对这些实施例进行更详细的描述。这些附图和文字描述并不是为了通过任何方式限制本发明构思的范围，而是通过参考特定实施例为本领域技术人员说明本发明的构思。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明实施方式作进一步地详细描述。
图1为本发明第一实施例提供的一种OGS触摸屏00的截面的结构示意图。如图1所示，本发明第一实施例提供的OGS触摸屏00可以包括基板001。
在该基板001的显示区上可以形成有第一p-ITO(polycrystalline silicon- ITO，多晶硅-氧化铟锡)阵列002，第一p-ITO阵列002可以包括多个沿基板001的长度方向x排布的第一p-ITO触摸电极0021。
第一p-ITO阵列002上可以形成有第二p-ITO阵列003，第二p-ITO阵列003可以包括多个沿基板001长度方向x排布的第二p-ITO触摸电极0031，第一p-ITO阵列002中任意两个相邻的第一p-ITO触摸电极0021的间距小于第二p-ITO阵列003中任意两个相邻的第二p-ITO触摸电极0031的间距，例如如图1所示，第一距离a小于第二距离b。
综上所述，由于本发明第一实施例提供的OGS触摸屏中，在基板上的显示区形成有第一p-ITO阵列，在该第一p-ITO阵列上形成有第二p-ITO阵列，且该第一p-ITO阵列包括沿基板长度方向排布的第一p-ITO触摸电极，该第二p-ITO阵列包括沿基板长度方向排布的第二p-ITO触摸电极，且该第一p-ITO阵列中任意两个相邻的第一p-ITO触摸电极的间距小于第二p-ITO阵列中任意两个相邻的第二p-ITO触摸电极的间距，使得基板上有p-ITO阵列的部分向无p-ITO阵列的部分过渡的膜厚呈阶梯状减小，则基板上有p-ITO阵列的部分与无p-ITO阵列的部分在相接处的色差和反射率差异变小，减小了基板上有p-ITO阵列的部分与无p-ITO阵列的部分的对外显现的差异，且无需再镀制IM层。因此，在消除OGS触摸屏上的ITO触摸电极图案的显现的基础上，降低了OGS触摸屏的制造成本。
进一步的，图1中的该多个p-ITO触摸电极0021可以沿基板001长度方向x等间距排布，在此情况下，该第一p-ITO阵列002中任意两个相邻的第一p-ITO触摸电极0021的间距均相等。图1中的该多个p-ITO触摸电极0031可以沿基板001长度方向x等间距排布，在此情况下，该第二p-ITO阵列003中任意两个相邻的第二p-ITO触摸电极0031的间距均相等。
例如，该第一p-ITO阵列002和第二p-ITO阵列003中的多个p-ITO触摸电极可以包括：多个垂直方向的绝缘的感应电极(也称Rx感应电极)或多个水平方向的绝缘的传输电极(也称Tx传输电极)。需要说明的是，本发明第一实施例中的OGS触摸屏是采用单层ITO(Single ITO)技术制成的，第一p-ITO阵列002和第二p-ITO阵列003叠加形成了整体的ITO层，该整体的ITO层可视为单层ITO技术中的单层ITO。
图1中的第二p-ITO阵列003可以通过如下方法形成：在低温条件下采用 包括草酸的刻蚀液刻蚀形成a-ITO(amorphous silicon-ITO，非晶硅-氧化铟锡)阵列(图1中未画出)后，通过退火工艺将a-ITO阵列进行转化得到第二p-ITO阵列。具体的，该低温条件的温度范围可以为20摄氏度至40摄氏度。草酸又名乙二酸。在低温条件下采用包括草酸的刻蚀液刻蚀形成a-ITO阵列可以包括依次进行涂光刻胶、使用掩膜板进行曝光、使用显影液进行显影、利用包括草酸的刻蚀液进行刻蚀、剥离光刻胶的第一次构图工艺。在经过第一次构图工艺后可以得到包括多个沿基板001长度方向x排布的a-ITO触摸电极(图1中未画出)的a-ITO阵列，例如，该多个a-ITO触摸电极可以沿基板001长度方向x等间距排布，在此情况下，该a-ITO阵列中任意两个相邻的a-ITO触摸电极的间距均相等，该间距例如为第二距离b。在经过第一次构图工艺得到该a-ITO阵列之后，可以对该a-ITO阵列进行高温退火工艺，使该a-ITO阵列转化为第二p-ITO阵列003，该第二p-ITO阵列003中任意两个相邻的p-ITO触摸电极0031的间距为第二距离b。
图1中该第一p-ITO阵列002可以是在高温条件下采用包括王水的刻蚀液刻蚀形成的p-ITO阵列。具体的，该高温条件的温度范围可以为200摄氏度至250摄氏度，王水又称“王酸”或者“硝基盐酸”，是一种腐蚀性非常强、冒黄色雾的液体，王水是浓盐酸和浓硝酸按照3:1的比例组成的混合物。例如，在高温条件下采用包括王水的刻蚀液刻蚀形成第一p-ITO阵列002可以包括依次进行涂光刻胶、使用掩膜板进行曝光、使用显影液进行显影、利用包括王水的刻蚀液进行刻蚀、剥离光刻胶的第二次构图工艺。在经过第二次构图工艺后，可以得到包括多个沿基板001的长度方向x排布的p-ITO触摸电极0021的第一p-ITO阵列002，该第一p-ITO阵列002中任意两个相邻的p-ITO触摸电极0021的间距小于第二p-ITO阵列003中任意两个相邻的p-ITO触摸电极0031的间距。
需要说明的是，在第一次构图工艺和第二次构图工艺中，进行曝光时采用的掩膜板可以相同，在第一次构图工艺中使用掩膜板进行曝光时所采用的曝光强度可以大于在第二次构图工艺中使用掩膜板进行曝光时所采用的曝光强度。具体的，在第一次构图工艺和第二次构图工艺中使用相同的掩膜板，能够节约掩膜板的用量，避免了掩膜板的浪费，从而节约了OGS触摸屏的制造成本。由于在第一次构图工艺中使用掩膜板进行曝光时所采用的曝光强度大于在第二次构图工艺中使用同一掩膜板进行曝光时所采用的曝光强度，使得经过显影、刻 蚀和光刻胶剥离后形成的a-ITO阵列中任意两个相邻的a-ITO触摸电极的间距大于p-ITO阵列002中任意两个相邻的p-ITO触摸电极0021的间距。
进一步的，如图2所示，本发明第二实施例提供了一种OGS触摸屏01，该OGS触摸屏01可以包括:基板001；在该基板001的周边区设置的黑矩阵004；在形成有该黑矩阵004的基板001上设置的金属层005；在形成有该金属层005的基板001上设置的上层覆盖(OC)层006；以及位于该OC层006上的第一p-ITO阵列002。具体的，可以在该基板001的周边区形成黑矩阵004，如图2所示，图2为OGS触摸屏01的周边区的截面的结构示意图。例如，可以依次执行三次构图工艺得到黑矩阵004、金属层005和OC层006，每次构图工艺可以包括依次执行涂光刻胶、使用掩膜板进行曝光、使用显影液进行显影、用刻蚀液进行刻蚀的构图工艺。需要说明的是，也可以通过其他构图工艺得到黑矩阵004、金属层005和OC层006，本发明实施例对此不做限定。特别的，OGS触摸屏的显示区的截面结构中没有黑矩阵，其他层级的结构可以参考图2，本发明实施例对此不做赘述。
在本发明实施例中的第一次构图工艺和第二次构图工艺中，进行曝光时采用的掩膜板可以相同，且在该第一次构图工艺和第二次构图工艺中掩膜板的位置可以不变，这样一来，第一p-ITO阵列002中的p-ITO触摸电极0021(即第一p-ITO触摸电极)与该第二p-ITO阵列003中的p-ITO触摸电极0031(即第二p-ITO触摸电极)的形状相同，且第二p-ITO触摸电极在第一p-ITO触摸电极上的投影的中心与第一p-ITO触摸电极的中心重合，这样可以使得多个第一p-ITO触摸电极和多个第二p-ITO触摸电极在该OGS屏幕上的分布更加均匀，使得该OGS屏幕的外观更加平整。例如，该第一p-ITO触摸电极和第二p-ITO触摸电极的形状可以为菱形或不规则的多边形。在实际应用中，该第二p-ITO触摸电极在第一p-ITO触摸电极上的投影的中心与第一p-ITO触摸电极的中心也可以不重合，本发明实施例对此不做限定。
现有技术中，通过在基板上形成IM层来消除OGS触摸屏上的ITO触摸电极的图案的显现。而本发明实施例提供的OGS触摸屏中，无需在基板上形成IM层，且本发明实施例中的第一p-ITO阵列和第二p-ITO阵列叠加后的厚度与现有技术中ITO触摸电极的厚度可以相等，这样可以在消除OGS触摸屏上的ITO触摸电极图案的显现的基础上，减小了OGS触摸屏的厚度。例如，该第二p-ITO 触摸电极位于第一p-ITO触摸电极上，且该第一p-ITO触摸电极与该第二p-ITO触摸电极的厚度相等，均等于现有技术中ITO触摸电极厚度的一半。
综上所述，本发明实施例提供的OGS触摸屏中，在基板上的显示区形成有第一p-ITO阵列，在该第一p-ITO阵列上形成有第二p-ITO阵列，且该第一p-ITO阵列包括沿基板长度方向排布的p-ITO触摸电极，该第二p-ITO阵列包括沿基板长度方向排布的p-ITO触摸电极，且该第一p-ITO阵列中任意两个相邻的p-ITO触摸电极的间距小于第二p-ITO阵列中任意两个相邻的p-ITO触摸电极的间距，使得基板上有p-ITO阵列的部分向无p-ITO阵列的部分过渡的膜厚呈阶梯状减小，则基板上有p-ITO阵列的部分与无p-ITO阵列的部分在相接处的色差和反射率差异变小，减小了基板上有p-ITO阵列的部分与无p-ITO阵列的部分的对外显现的差异，且无需再镀制IM层。因此，在消除OGS触摸屏上的ITO触摸电极图案的显现的基础上，降低了OGS触摸屏的制造成本。
本发明第三实施例还提供了一种OGS触摸屏的制造方法，适用于OGS触摸屏的可视区域制造，该可视区域可以包括周边区和显示区。如图3所示，该OGS触摸屏的制造方法可以包括步骤301和步骤302。
步骤301中，在基板的显示区形成第一p-ITO阵列。
例如，该第一p-ITO阵列可以包括多个沿基板长度方向排布的第一p-ITO触摸电极。例如，该第一p-ITO阵列中的多个p-ITO触摸电极可以沿基板长度方向等间距排布。例如，该第一p-ITO阵列中任意两个相邻的p-ITO触摸电极的间距为第一距离，本发明实施例对此不做限定。
步骤302中，在形成有第一p-ITO阵列的基板上形成第二p-ITO阵列。
例如，该第二p-ITO阵列可以包括多个沿基板长度方向排布的第二p-ITO触摸电极，该第二p-ITO阵列中任意两个相邻的第二p-ITO触摸电极的间距大于该第一p-ITO阵列中任意两个相邻的第一p-ITO触摸电极的间距。例如，该第二p-ITO阵列中的多个p-ITO触摸电极可以沿基板长度方向等间距排布。例如，该第二p-ITO阵列中任意两个相邻的第二p-ITO触摸电极的间距为第二距离，且该第二距离大于该第一距离，本发明实施例对此不做限定。
综上所述，在本发明第三实施例提供的OGS触摸屏的制造方法中，在基板上的显示区形成第一p-ITO阵列，在该第一p-ITO阵列上形成第二p-ITO阵列，且该第一p-ITO阵列包括沿基板长度方向排布的第一p-ITO触摸电极，该第二 p-ITO阵列包括沿基板长度方向排布的第二p-ITO触摸电极，且该第一p-ITO阵列中任意两个相邻的p-ITO触摸电极的间距小于第二p-ITO阵列中任意两个相邻的p-ITO触摸电极的间距，使得基板上有p-ITO阵列的部分向无p-ITO阵列的部分过渡的膜厚呈阶梯状减小，则基板上有p-ITO阵列的部分与无p-ITO阵列的部分在相接处的色差和反射率差异变小，减小了基板上有p-ITO阵列的部分与无p-ITO阵列的部分的对外显现的差异，且无需再镀制IM层。因此，在消除OGS触摸屏上的ITO触摸电极图案的显现的基础上，降低了OGS触摸屏的制造成本。
进一步的，在步骤301之前，该OGS触摸屏的制造方法还可以包括：在基板的周边区形成黑矩阵；在形成有黑矩阵的基板上形成金属层；在形成有金属层的基板上形成OC层。
步骤301可以包括：在形成有OC层的基板的显示区形成第一p-ITO阵列。在这种情况下，步骤301和步骤302具体可以包括：在形成有OC层的基板上形成p-ITO层；在形成有p-ITO层的基板上形成a-ITO层；对形成的a-ITO层进行第一次构图工艺形成a-ITO阵列，a-ITO阵列包括多个沿基板长度方向排布的a-ITO触摸电极；对形成的p-ITO层进行第二次构图工艺形成第一p-ITO阵列；对a-ITO阵列进行高温退火工艺，使a-ITO阵列转化为第二p-ITO阵列。
可选的，在第一次构图工艺和第二次构图工艺中，采用同一掩膜板对a-ITO层和p-ITO层进行曝光。对形成的a-ITO层进行第一次构图工艺形成a-ITO阵列可以包括：使用掩膜板采用第一曝光强度的光对a-ITO层进行曝光。对形成的p-ITO层进行第二次构图工艺形成第一p-ITO阵列可以包括：使用掩膜板采用第二曝光强度的光对p-ITO层进行曝光，第二曝光强度大于第一曝光强度。
例如，在形成a-ITO阵列时，所采用的刻蚀液包括草酸，在形成第一p-ITO阵列时，所采用的刻蚀液包括王水。
在形成有OC层的基板上形成p-ITO层可以包括：在高温条件下，在形成有OC层的基板上镀制p-ITO层。在形成有p-ITO层的基板上形成a-ITO层可以包括:在低温条件下，在形成有p-ITO层的基板上镀制a-ITO层。具体的，高温条件的温度范围为200摄氏度至250摄氏度，低温条件的温度范围为20摄氏度至40摄氏度。
综上所述，在本发明实施例提供的OGS触摸屏的制造方法中，在基板上的 显示区形成第一p-ITO阵列，在该第一p-ITO阵列上形成第二p-ITO阵列，且该第一p-ITO阵列包括沿基板长度方向排布的第一p-ITO触摸电极，该第二p-ITO阵列包括沿基板长度方向排布的第二p-ITO触摸电极，且该第一p-ITO阵列中任意两个相邻的第一p-ITO触摸电极的间距小于第二p-ITO阵列中任意两个相邻的第二p-ITO触摸电极的间距，使得基板上有p-ITO阵列的部分向无p-ITO阵列的部分过渡的膜厚呈阶梯状减小，则基板上有p-ITO阵列的部分与无p-ITO阵列的部分在相接处的色差和反射率差异变小，减小了基板上有p-ITO阵列的部分与无p-ITO阵列的部分的对外显现的差异，且无需再镀制IM层，因此，在消除OGS触摸屏上的ITO触摸电极图案的显现的基础上，降低了OGS触摸屏的制造成本。
本发明第四实施例提供了一种OGS触摸屏的制造方法，其适用于OGS触摸屏的可视区域制造，该可视区域包括周边区和显示区。如图4所示，该OGS触摸屏的制造方法可以包括以下步骤401至步骤408。
步骤401中，在基板的周边区形成黑矩阵。
例如，可以在基板上的周边区涂覆黑矩阵层，并依次进行涂光刻胶、使用掩膜板进行曝光、用显影液进行显影、用刻蚀液进行刻蚀和剥离光刻胶，以在该基板的周边区形成黑矩阵。需要说明的是，本发明实施例中在基板的周边区形成黑矩阵的方法可以参考现有技术中在基板的周边区形成黑矩阵的方法，本发明实施例对此不再赘述。
步骤402中，在形成有黑矩阵的基板上形成金属层。
具体的，可以通过沉积、涂敷或溅射的方式在步骤401中形成的黑矩阵上形成金属层，实际应用中，也可以通过其他方式在步骤401中形成的黑矩阵上形成金属层，本发明实施例对此不做限定。该金属层可以包括金属桥和周边金属布线。在此不做限定。
步骤403中，在形成有金属层的基板上形成OC层。
在步骤402中形成的金属层上形成OC层，该OC层能够对金属层中的周边金属布线和金属桥起到保护作用。在形成有金属层的基板上形成OC层的方法可以参考在基板的周边区形成黑矩阵的方法，本发明实施例对此不做赘述。
步骤404中，在形成有OC层的基板上形成p-ITO层。
例如，可以在高温条件下，通过沉积、涂敷或溅射的方式在形成有OC层的 基板上镀制p-ITO层。需要说明的是，该高温条件的温度范围可以为200摄氏度至250摄氏度，该高温条件的温度范围还可以为其他温度范围，本发明实施例对此不做限定。
步骤405中，在形成有p-ITO层的基板上形成a-ITO层。
例如，可以在低温条件下，通过沉积、涂敷或溅射的方式在形成有p-ITO层的基板上镀制a-ITO层，需要说明的是，该低温条件的温度范围可以为20摄氏度至40摄氏度，该低温条件的温度范围还可以为其他温度范围，本发明实施例对此不做限定。
步骤406中，对形成的a-ITO层进行第一次构图工艺形成a-ITO阵列，a-ITO阵列包括多个沿基板长度方向排布的a-ITO触摸电极。
例如，可以对步骤405中形成的a-ITO层进行第一次构图工艺形成a-ITO阵列，第一构图工艺可以包括依次进行涂光刻胶、使用掩膜板进行曝光、用显影液进行显影、用刻蚀液进行刻蚀和剥离光刻胶等。需要说明的是，在该第一次构图工艺中，使用掩膜板对a-ITO层进行曝光时采用的是第一曝光强度的光，在用刻蚀液进行刻蚀时，所采用的刻蚀液可以包括草酸，草酸能够将未涂覆有光刻胶的a-ITO层刻蚀掉，但是草酸不能将位于a-ITO层下方的p-ITO层刻蚀掉，从而避免了在第一次构图工艺中将位于a-ITO层下方的p-ITO层刻蚀掉。例如，经过第一次构图工艺后得到的a-ITO阵列可以包括多个沿基板的长度方向排布的a-ITO触摸电极。例如，该a-ITO阵列中的多个a-ITO触摸电极可以沿基板的长度方向等间距排布。例如，该a-ITO阵列中任意两个相邻的a-ITO触摸电极的间距为第二距离，本发明实施例对此不做限定。
步骤407中，对形成的p-ITO层进行第二次构图工艺形成第一p-ITO阵列。
例如，可以对步骤404中形成的p-ITO层进行第二次构图工艺形成第一p-ITO阵列，第二次构图工艺可以包括依次进行涂光刻胶、使用掩膜板进行曝光、用显影液进行显影、用刻蚀液进行刻蚀和剥离光刻胶等。需要说明的是，该第二次构图工艺中使用的掩膜板与第一次构图工艺中使用的掩膜板相同，能够节约掩膜板的用量，避免了掩膜板的浪费，从而节约了OGS触摸屏的制造成本。
在该第二次构图工艺中，使用掩膜板对p-ITO层进行曝光时采用的是第二曝光强度的光，且该第二曝光强度小于第一曝光强度，使得经过显影、刻蚀和光刻胶剥离后形成的a-ITO阵列中任意两个相邻的a-ITO触摸电极的间距大于第 二次构图工艺中得到的第一p-ITO阵列中任意两个相邻的p-ITO触摸电极的间距。
在第二次构图工艺中用刻蚀液进行刻蚀时，所采用的刻蚀液可以包括王水，王水能够将a-ITO层和p-ITO层刻蚀掉。由于在第二次构图工艺中，在涂光刻胶、使用掩膜板进行曝光和用显影液进行显影后，部分p-ITO层和步骤406中形成的a-ITO阵列上涂覆有光刻胶，所以在用刻蚀液进行刻蚀时，该包含有王水的刻蚀液将未涂覆有光刻胶的p-ITO层刻蚀掉，且由于a-ITO阵列上涂覆有光刻胶，能够避免a-ITO阵列被包括王水的刻蚀液刻蚀掉。例如，经过第二次构图工艺后得到的第一p-ITO阵列可以包括多个沿基板的长度方向排布的p-ITO触摸电极，且该第一p-ITO阵列中任意两个相邻的p-ITO触摸电极的间距小于a-ITO阵列中任意两个相邻的a-ITO触摸电极的间距。例如，该第一p-ITO阵列中的多个p-ITO触摸电极可以沿基板长度方向等间距排布，其间距例如可以为第一距离。该p-ITO触摸电极的形状可以为菱形或不规则的多边形，该p-ITO触摸电极也可以为其他形状，本发明实施例对此不做限定。
步骤408中，对a-ITO阵列进行高温退火工艺，使a-ITO阵列转化为第二p-ITO阵列。
例如，可以经过高温退火工艺，将步骤406中形成的a-ITO阵列转化为第二p-ITO阵列，在此情况下，该第二p-ITO阵列包括多个沿基板长度方向排布的第二p-ITO触摸电极，当步骤406中形成的该a-ITO阵列中的多个a-ITO触摸电极沿基板的长度方向等间距排布时，步骤408中得到的第二p-ITO阵列中的多个p-ITO触摸电极沿基板的长度方向也等间距排布。对a-ITO阵列进行高温退火工艺，使a-ITO阵列转化为第二p-ITO阵列，可以使得第一p-ITO阵列与第二p-ITO阵列的折射率相同。本发明实施例中的第一p-ITO阵列和第二p-ITO阵列中的多个p-ITO触摸电极可以包括：多个垂直方向的绝缘的感应电极(也称Rx感应电极)或多个水平方向的绝缘的传输电极(也称Tx传输电极)。步骤402中形成的金属层中的金属桥可以用于连接该多个水平方向的传输电极，该多个水平方向的传输电极之间能够通过该金属桥进行信号的传输。
需要说明的是，在步骤406和步骤407中的第一次构图工艺和第二次构图工艺中，进行曝光时采用的掩膜板可以相同，且在该第一次构图工艺和第二次构图工艺中掩膜板的位置可以不变，这样一来，步骤408中经过步骤406中形 成的a-ITO阵列转化成的该第二p-ITO阵列中的p-ITO触摸电极(即第二p-ITO触摸电极)的图形，与步骤407中形成的第一p-ITO阵列中的p-ITO触摸电极(即第一p-ITO触摸电极)的形状相同，且第二p-ITO触摸电极在第一p-ITO触摸电极上的投影的中心与第一p-ITO触摸电极的中心重合，这样可以使得多个第一p-ITO触摸电极和多个第二p-ITO触摸电极在该OGS屏幕上的分布更加均匀，使得该OGS屏幕的外观更加平整。例如，该第一p-ITO触摸电极和第二p-ITO触摸电极的形状可以为菱形或不规则的多边形。在实际应用中，该第二p-ITO触摸电极在第一p-ITO触摸电极上的投影的中心与第一p-ITO触摸电极的中心也可以不重合，本发明实施例对此不做限定。
现有技术中，通过在基板上形成IM层来消除OGS触摸屏上的ITO触摸电极的图案的显现。而本发明实施例提供的OGS触摸屏，无需在基板上形成IM层，且本发明实施例中的第一p-ITO阵列和第二p-ITO阵列叠加后的厚度与现有技术中ITO触摸电极的厚度可以相等，这样可以在消除OGS触摸屏上的ITO触摸电极图案的显现的基础上，减小了OGS触摸屏的厚度。例如，第二p-ITO触摸电极位于第一p-ITO触摸电极上，且第一p-ITO触摸电极与第二p-ITO触摸电极的厚度相等，均等于现有的单层ITO技术中的单层ITO的厚度的一半。
综上所述，在本发明第四实施例提供的OGS触摸屏的制造方法中，在基板上的显示区形成第一p-ITO阵列，在该第一p-ITO阵列上形成第二p-ITO阵列，且该第一p-ITO阵列包括沿基板长度方向排布的p-ITO触摸电极，该第二p-ITO阵列包括沿基板长度方向排布的p-ITO触摸电极，且该第一p-ITO阵列中任意两个相邻的p-ITO触摸电极的间距小于第二p-ITO阵列中任意两个相邻的p-ITO触摸电极的间距，使得基板上有p-ITO阵列的部分向无p-ITO阵列的部分过渡的膜厚呈阶梯状减小，则基板上有p-ITO阵列的部分与无p-ITO阵列的部分在相接处的色差和反射率差异变小，减小了基板上有p-ITO阵列的部分与无p-ITO阵列的部分的对外显现的差异，且无需再镀制IM层，因此，在消除OGS触摸屏上的ITO触摸电极图案的显现的基础上，降低了OGS触摸屏的制造成本。
本发明实施例还提供了一种OGS触摸装置，该OGS触摸装置可以包括图1或图2所示的OGS触摸屏。
综上所述，在本发明实施例提供的OGS触摸装置中，在基板上的显示区形成有第一p-ITO阵列，在该第一p-ITO阵列上形成有第二p-ITO阵列，且该第 一p-ITO阵列包括沿基板长度方向排布的p-ITO触摸电极，该第二p-ITO阵列包括沿基板长度方向排布的p-ITO触摸电极，且该第一p-ITO阵列中任意两个相邻的p-ITO触摸电极的间距小于第二p-ITO阵列中任意两个相邻的p-ITO触摸电极的间距，使得基板上有p-ITO阵列的部分向无p-ITO阵列的部分过渡的膜厚呈阶梯状减小，则基板上有p-ITO阵列的部分与无p-ITO阵列的部分在相接处的色差和反射率差异变小，减小了基板上有p-ITO阵列的部分与无p-ITO阵列的部分的对外显现的差异，且无需再镀制IM层，因此，在消除OGS触摸屏上的ITO触摸电极图案的显现的基础上，降低了OGS触摸屏的制造成本。
以上所述仅为本发明的较佳实施例，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (15)

  1. 一种OGS触摸屏，包括:
    基板；
    设置在所述基板的显示区上的第一p-ITO阵列，所述第一p-ITO阵列包括多个沿所述基板长度方向排布的第一p-ITO触摸电极；以及
    设置在所述第一p-ITO阵列上的第二p-ITO阵列，所述第二p-ITO阵列包括多个沿所述基板长度方向排布的第二p-ITO触摸电极，
    其中，所述第一p-ITO阵列中任意两个相邻的第一p-ITO触摸电极的间距小于所述第二p-ITO阵列中任意两个相邻的第二p-ITO触摸电极的间距。
  2. 根据权利要求1所述的OGS触摸屏，其中，
    所述第一p-ITO阵列是采用包括王水的刻蚀液刻蚀形成的p-ITO阵列；所述第二p-ITO阵列是采用包括草酸的刻蚀液刻蚀形成a-ITO阵列后对所述a-ITO阵列进行退火工艺转化得到的p-ITO阵列。
  3. 根据权利要求1所述的OGS触摸屏，还包括：
    设置在所述基板的周边区的黑矩阵；
    设置在形成有所述黑矩阵的基板上的金属层；以及
    设置在形成有所述金属层的基板上的上层覆盖层，
    其中，所述第一p-ITO阵列设置在所述上层覆盖层上。
  4. 根据权利要求1所述的OGS触摸屏，其中，
    所述第一p-ITO阵列包括多个沿所述基板长度方向等间距排布的第一p-ITO触摸电极；以及
    所述第二p-ITO阵列包括多个沿所述基板长度方向等间距排布的第二p-ITO触摸电极。
  5. 根据权利要求1至4中任一项所述的OGS触摸屏，其中，
    第一p-ITO触摸电极与第二p-ITO触摸电极的形状相同且所述第二p-ITO触摸电极在所述第一p-ITO触摸电极上的投影的中心与所述第一p-ITO触摸电 极的中心重合。
  6. 一种OGS触摸屏的制造方法，包括：
    在基板的显示区形成第一p-ITO阵列，以及在形成有所述第一p-ITO阵列的基板上形成第二p-ITO阵列，
    其中，所述第一p-ITO阵列包括多个沿所述基板长度方向排布的第一p-ITO触摸电极，所述第二p-ITO阵列包括多个沿所述基板长度方向排布的第二p-ITO触摸电极，所述第一p-ITO阵列中任意两个相邻的第一p-ITO触摸电极的间距小于所述第二p-ITO阵列中任意两个相邻的第二p-ITO触摸电极的间距。
  7. 根据权利要求6所述的方法，其中，
    所述第一p-ITO阵列包括多个沿所述基板长度方向等间距排布的第一p-ITO触摸电极；以及
    所述第二p-ITO阵列包括多个沿所述基板长度方向等间距排布的第二p-ITO触摸电极。
  8. 根据权利要求6所述的方法，其中，在基板的显示区形成第一p-ITO阵列之前，所述方法还包括：
    在所述基板的周边区形成黑矩阵；
    在形成有所述黑矩阵的基板上形成金属层；以及
    在形成有所述金属层的基板上形成上层覆盖层，
    其中，所述在基板的显示区形成第一p-ITO阵列的步骤包括：在形成有所述上层覆盖层的基板的显示区形成所述第一p-ITO阵列。
  9. 根据权利要求8所述的方法，其中，所述在形成有所述上层覆盖层的基板的显示区形成第一p-ITO阵列和在形成有所述第一p-ITO阵列的基板上形成第二p-ITO阵列的步骤包括：
    在形成有所述上层覆盖层的基板上形成p-ITO层；
    在形成有所述p-ITO层的基板上形成a-ITO层；
    对所述a-ITO层进行第一次构图工艺形成a-ITO阵列，所述a-ITO阵列包括 多个沿所述基板长度方向排布的a-ITO触摸电极；
    对所述p-ITO层进行第二次构图工艺形成所述第一p-ITO阵列；以及
    对所述a-ITO阵列进行高温退火工艺，使所述a-ITO阵列转化为第二p-ITO阵列。
  10. 根据权利要求9所述的方法，其中，
    在所述第一次构图工艺中对所述a-ITO层进行曝光和在所述第二次构图工艺中对所述p-ITO层进行曝光采用同一掩膜板。
  11. 根据权利要求10所述的方法，其中，
    所述对所述a-ITO层进行第一次构图工艺形成a-ITO阵列的步骤包括：使用掩膜板采用第一曝光强度的光对所述a-ITO层进行曝光；
    所述对所述p-ITO层进行第二次构图工艺形成所述第一p-ITO阵列的步骤包括：使用所述掩膜板采用第二曝光强度的光对所述p-ITO层进行曝光，所述第二曝光强度小于所述第一曝光强度。
  12. 根据权利要求9所述的方法，其中，在第一次构图工艺中所采用的刻蚀液包括草酸，在第二次构图工艺中所采用的刻蚀液包括王水。
  13. 根据权利要求9所述的方法，其中，所述在形成有所述上层覆盖层的基板上形成p-ITO层的步骤包括：在高温条件下，在形成有所述上层覆盖层的基板上镀制p-ITO层，以及
    在形成有所述p-ITO层的基板上形成a-ITO层的步骤包括:在低温条件下，在形成有所述p-ITO层的基板上镀制a-ITO层。
  14. 根据权利要求13所述的方法，其中，所述高温条件的温度范围为200摄氏度至250摄氏度，所述低温条件的温度范围为20摄氏度至40摄氏度。
  15. 一种OGS触摸装置，包括：权利要求1至5任意一项所述的OGS触摸屏。
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