WO2016125720A1 - 高周波スイッチモジュール - Google Patents
高周波スイッチモジュール Download PDFInfo
- Publication number
- WO2016125720A1 WO2016125720A1 PCT/JP2016/052864 JP2016052864W WO2016125720A1 WO 2016125720 A1 WO2016125720 A1 WO 2016125720A1 JP 2016052864 W JP2016052864 W JP 2016052864W WO 2016125720 A1 WO2016125720 A1 WO 2016125720A1
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- WIPO (PCT)
- Prior art keywords
- transmission conductor
- switch module
- conductor
- frequency switch
- transmission
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/44—Transmit/receive switching
- H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/46—Networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
Definitions
- the present invention relates to a high-frequency switch module used for a front end portion of a wireless communication device.
- wireless communication devices such as mobile phones are equipped with a front-end circuit capable of communicating many communication bands.
- a front-end circuit capable of communicating many communication bands.
- transmission signals and reception signals of a plurality of communication bands are transmitted / received using an antenna common to these communication bands.
- the size of the front end circuit is reduced.
- many switch modules are employ
- the switch module described in Patent Document 1 includes a plurality of communication band transmission / reception circuits and SPnT (n is an integer of 2 or more) switch elements.
- the common terminal of the switch element is connected to the antenna, and the plurality of selected terminals are connected to the transmission / reception circuit of each communication band.
- one of the transmission / reception circuits of a plurality of communication bands is switched to the antenna and connected.
- a plurality of selected terminals of such a switch element are often arranged along one side of the casing of the switch element, and these selected terminals are generally close to each other.
- the harmonic frequency of the signal of the first communication band is close to or overlaps with the fundamental frequency of the second communication band.
- the first selected terminal and the second selected terminal are close to each other, the first communication band signal is transmitted to the first selected terminal, and the second communication band signal is transmitted to the second selected terminal.
- the harmonic component of the first communication band leaks from the first selected terminal to the second selected terminal, and is unnecessarily transmitted to the transmission / reception circuit of the second communication band. As a result, the transmission characteristics for the second communication band deteriorate.
- an inductor is connected between the transmission line to which the first selected terminal is connected and the transmission line to which the second selected terminal is connected. Due to parallel resonance between this inductor (inductance L) and a capacitor (capacitance C) due to capacitive coupling between the first selected terminal and the second selected terminal, the first selected terminal and the second selected terminal Isolation between is secured.
- the resonance frequency of the parallel circuit described above is 1 / (2 ⁇ (LC)), and the frequency of the high-frequency signal that is not desired to be leaked is matched with this resonance frequency.
- the capacitor is determined by capacitive coupling between the first selected terminal and the second selected terminal, the capacitance C has a very small value. For this reason, the inductance L must be increased as the frequency of the high-frequency signal that is not desired to be leaked is higher.
- the inductor becomes larger and the high-frequency switch module becomes larger.
- An object of the present invention is to provide a small high-frequency switch module capable of ensuring high isolation on the selected terminal side of a switch element.
- the high-frequency switch module of the present invention includes a switch element, a filter element, an inductor, and first and second transmission conductors.
- the switch element includes a common terminal and first and second selected terminals that are selectively connected to the common terminal.
- the first transmission conductor connects the first selected terminal and the filter element.
- the second transmission conductor connects the second selected terminal and the filter element.
- the inductor is connected between the first transmission conductor and the second transmission conductor.
- the separation distance of at least a part of the first transmission conductor and the second transmission conductor is shorter than the separation distance between the first selected terminal and the second selected terminal.
- the capacitance of the capacitor connected in parallel to the inductor can be increased by capacitive coupling between the first transmission conductor and the second transmission conductor.
- the resonance frequency of the LC parallel resonance circuit can be increased without increasing the inductance.
- the high frequency switch module of the present invention preferably has the following configuration.
- the high frequency switch module includes a circuit board on which a switch element, a filter element, and an inductor are mounted, and a first transmission conductor and a second transmission conductor are formed.
- the first transmission conductor and the second transmission conductor are formed on different layers of the circuit board. In plan view of the circuit board, at least a part of the first transmission conductor and the second transmission conductor overlap each other.
- the capacitive coupling between the first transmission conductor and the second transmission conductor can be strengthened without increasing the area of the circuit board.
- the widths of the overlapping portions of the first transmission conductor and the second transmission conductor are different.
- the high frequency switch module of the present invention may have the following configuration.
- the inductor is a spiral conductor pattern formed on the circuit board. In plan view of the circuit board, a part of the spiral conductor pattern overlaps at least a part of the first transmission conductor.
- the high-frequency switch module can be formed in a smaller area.
- the width of the overlapping portion of the spiral conductor pattern and the first transmission conductor is different.
- the ground conductor formed inside the circuit board and close to the inductor has a shape that does not overlap the spiral central opening.
- the present invention it is possible to realize a small high-frequency switch module that ensures high isolation on the selected terminal side of the switch element. As a result, a high-frequency switch module having excellent transmission characteristics can be realized in a small size.
- FIG. 1 is a circuit diagram of a high-frequency switch module according to the first embodiment of the present invention.
- the high frequency switch module 10 includes a switch element 20, an inductor 30, a capacitor 31, and a filter element 40.
- the filter element 40 includes SAW filters 41 and 42.
- the switch element 20 includes a common terminal P00 and selected terminals P01, P02, P03, and P04.
- the switch element 20 is an SPnT switch made of a semiconductor switch. n may be an integer of 2 or more.
- the common terminal P00 is selectively connected to any of the selected terminals P01, P02, P03, P04.
- the common terminal P00 is connected to the antenna connection terminal Pant of the high-frequency switch module 10.
- the antenna connection terminal Pant is connected to the antenna ANT.
- the selected terminal P02 is connected to the SAW filter 41 via the transmission conductor 901.
- the selected terminal P03 is connected to the SAW filter 42 via the transmission conductor 902.
- the selected terminal P02 corresponds to the first selected terminal of the present invention
- the selected terminal P03 corresponds to the second selected terminal of the present invention.
- the transmission conductor 901 corresponds to the first transmission conductor of the present invention
- the transmission conductor 902 corresponds to the second transmission conductor of the present invention.
- SAW filter 41 and SAW filter 42 have different passbands.
- the SAW filter 41 and the SAW filter 42 are connected to the front end terminal Pfe of the high frequency switch module 10. That is, the SAW filter 41 and the SAW filter 42 have a common terminal on the front end terminal Pfe side (a terminal opposite to the side connected to the selected terminals P02 and P03) and are connected to the front end terminal Pfe. Thereby, the SAW filter 41 and the SAW filter 42 can be formed in a small size.
- the inductor 30 is connected between the transmission conductor 901 and the transmission conductor 902.
- the capacitor 31 is connected between the transmission conductor 901 and the transmission conductor 902.
- L of the LC parallel resonant circuit is constituted by an inductor 30.
- C of the LC parallel resonance circuit is constituted by a parallel circuit of a capacitor 210 and a capacitor 31 generated between the selected terminals P02 and P03.
- the high-frequency switch module 10 having such a circuit configuration is used as follows.
- the SAW filter 41 is set so that the frequency band of the received signal in the first communication band falls within the pass band.
- the received signal of the first communication band received by the antenna ANT is input to the SAW filter 41 via the switch element 20.
- the received signal in the first communication band is filtered by the SAW filter 41 and output from the front end terminal Pfe.
- the common terminal P00 and the selected terminal P03 are connected.
- the SAW filter 42 is set so that the frequency band of the received signal in the second communication band is within the pass band.
- the received signal of the second communication band received by the antenna ANT is input to the SAW filter 42 via the switch element 20.
- the received signal in the second communication band is filtered by the SAW filter 42 and output from the front end terminal Pfe.
- the resonance frequency of the LC parallel resonance circuit including the capacitors 31 and 210 and the inductor 30 is a harmonic component of the reception signal of the first communication band and is the fundamental frequency of the reception signal of the second communication band. It is set to a frequency that is close or overlapping.
- FIG. 2 is a plan view of the high-frequency switch module according to the first embodiment of the present invention. In FIG. 2, only the portions characteristic of the present application in the high-frequency switch module 10 are illustrated.
- the high-frequency switch module 10 includes a multilayer body 90, a mounting type switch element 20, a mounting type inductor 30, and a mounting type filter element 40.
- the laminated body 90 is formed by laminating dielectric substrates having conductor patterns formed at predetermined positions.
- the mounting type switch element 20, the mounting type inductor 30, and the mounting type filter element 40 are mounted on the surface of the multilayer body 90.
- the land conductor LE02 on which the selected terminal P02 of the switch element 20 is mounted and the land conductor for the SAW filter 41 of the mounting type filter element 40 are connected by a transmission conductor 901 formed in the multilayer body 90.
- the land conductor LE03 on which the selected terminal P03 of the switch element 20 is mounted and the land conductor for the SAW filter 42 of the mounting type filter element 40 are connected by a transmission conductor 902 formed in the multilayer body 90.
- the land conductor LE301 on which one outer conductor of the inductor 30 is mounted is connected to the transmission conductor 901.
- the land conductor LE302 on which the other outer conductor of the inductor 30 is mounted is connected to the transmission conductor 902 formed in the multilayer body 90.
- the inductor 30 is mounted in the vicinity of the selected terminals P02 and P03 in the switch element 20.
- At least a part of the portion connecting the land conductors LE02 and LE301 in the transmission conductor 901 and the portion connecting the land conductors LE03 and LE302 in the transmission conductor 902 are close to each other. More specifically, the distance D D portion transmission conductors 901 and 902 are close is shorter than the distance D L of the land conductor LE02, LE03. A portion where the transmission conductors 901 and 902 are adjacent functions as the capacitor 31.
- FIG. 3 is a graph showing the isolation characteristics of the configuration and comparative configuration of the high-frequency switch module according to the first embodiment of the present invention.
- a comparison structure shows the structure which abbreviate
- the first communication can be performed without deteriorating the insertion loss of the fundamental frequency. It can suppress that the harmonic component of the received signal of a band is output from the front end terminal Pfe.
- a high-frequency switch module 10 of the present embodiment a high-frequency switch module having high transmission characteristics while ensuring high isolation on the selected terminal side of the switch element can be reduced in size with a simple configuration. Can be realized.
- the C (capacitance) of the LC parallel resonance circuit is configured to include the capacitor 31 constituted by the portions where the transmission conductors 901 and 902 are close to each other.
- the resonance frequency of the LC parallel resonance circuit can be set high without increasing the shape of the inductor 30. Therefore, the high frequency switch module 10 can be further reduced in size.
- FIG. 4 is a plan view showing the structure of the high-frequency switch module according to the second embodiment of the present invention.
- the high-frequency switch module 10A of this embodiment is different from the high-frequency switch module 10 of the first embodiment in the structure of the transmission conductors 901A and 902A.
- the transmission conductor 901A and the transmission conductor 902A are formed in different layers of the multilayer body 90A.
- the transmission conductor 901A and the transmission conductor 902A intersect each other when the multilayer body 90A is viewed in plan. With this configuration, the transmission conductor 901A and a part of the transmission conductor 902A overlap each other in plan view of the multilayer body 90A.
- the capacitive coupling between the transmission conductor 901A and the transmission conductor 902A can be increased. Accordingly, C (capacitance) of the LC parallel resonant circuit can be increased and L (inductance) can be decreased, so that the shape of the inductor 30 can be reduced. Therefore, the high frequency switch module 10A can be formed smaller.
- FIG. 5A is a plan view showing the structure of a high-frequency switch module according to the third embodiment of the present invention
- FIG. 5B is an enlarged view of a portion where transmission conductors overlap.
- the high-frequency switch module 10B of this embodiment is different from the high-frequency switch module 10A of the second embodiment in the structure of the transmission conductors 901B and 902B.
- the transmission conductor 901B and the transmission conductor 902B are parallel in a partially extending direction.
- the capacitive coupling between the transmission conductor 901B and the transmission conductor 902B can be further increased.
- C (capacitance) of the LC parallel resonant circuit can be further increased, and L (inductance) can be further decreased, so that the shape of the inductor 30 can be further decreased. Therefore, the high frequency switch module 10B can be made smaller.
- the widths of the overlapping portions of the transmission conductor 901B and the transmission conductor 902B are different. Thereby, it can suppress that the magnitude
- FIG. 6 is a plan view showing the structure of the high-frequency switch module according to the fourth embodiment of the present invention.
- FIG. 7 is a partial cross-sectional view showing the structure of the high-frequency switch module according to the fourth embodiment of the present invention.
- the high-frequency switch module 10C of this embodiment is different from the high-frequency switch module 10 of the first embodiment in that an inductor 30C is formed in the multilayer body 90C.
- the inductor 30C is formed in a spiral shape by a conductor pattern formed in the multilayer body 90C. At this time, the winding axis of the inductor 30C is parallel to the stacking direction.
- an LC parallel resonant circuit can be formed between the transmission conductor 901C and the transmission conductor 902C, and the shape of the inductor 30C can be reduced. Therefore, the shape of the high-frequency switch module 10C viewed in plan can be made smaller than the shape of the high-frequency switch module 10 viewed in plan.
- variety of the conductor pattern which comprises the inductor 30C differs from the width
- the internal ground conductor 910G of the multilayer body 90C is formed over substantially the entire surface of the multilayer body 90C in plan view, but includes an opening 911.
- the opening 911 overlaps the spiral central opening of the inductor 30C with the multilayer body 90C being planar.
- the magnetic field generated by the inductor 30C is not hindered by the internal ground conductor 910G, so that the deterioration of the Q of the inductor 30C can be suppressed.
- the isolation on the selected terminal side of the switch element 20 can be further improved.
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- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Power Engineering (AREA)
- Transceivers (AREA)
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
Abstract
Description
20:スイッチ素子
30,30C:インダクタ
40:フィルタ素子
41,42:SAWフィルタ
90,90A,90B,90C:積層体
901,902,901A,902A,901B,902B,901C,902C:伝送導体
910G:内部グランド導体
911:開口部
Claims (6)
- 共通端子、および、該共通端子に選択的に接続される第1、第2被選択端子を備えたスイッチ素子と、
前記第1被選択端子および前記第2被選択端子に接続され、出力端子が共通化されたフィルタ素子と、
前記第1被選択端子と前記フィルタ素子とを接続する第1伝送導体と、
前記第2被選択端子と前記フィルタ素子とを接続する第2伝送導体と、
前記第1伝送導体と前記第2伝送導体との間に接続されるインダクタと、
を備え、
前記第1伝送導体と前記第2伝送導体との少なくとも一部の離間距離は、前記第1被選択端子と前記第2被選択端子と離間距離よりも短い、
高周波スイッチモジュール。 - 前記スイッチ素子、前記フィルタ素子、および、前記インダクタが実装され、前記第1伝送導体と前記第2伝送導体が形成された回路基板を備え、
前記第1伝送導体と前記第2伝送導体は、前記回路基板の異なる層に形成されており、
前記回路基板を平面視して、前記第1伝送導体と前記第2伝送導体は少なくとも一部が重なっている、
請求項1に記載の高周波スイッチモジュール。 - 前記第1伝送導体と前記第2伝送導体における重なっている部分の幅は異なる、
請求項2に記載の高周波スイッチモジュール。 - 前記インダクタは、前記回路基板に形成されたスパイラル形状の導体パターンであり、
前記回路基板を平面視して、前記スパイラル形状の導体パターンの一部は、前記第1伝送導体の少なくとも一部に重なっている、
請求項1に記載の高周波スイッチモジュール。 - 前記スパイラル形状の導体パターンと前記第1伝送導体との重なる部分の幅は異なる、
請求項4に記載の高周波スイッチモジュール。 - 前記回路基板の内部に形成され、前記インダクタに近接するグランド導体は、前記スパイラル形状の中央開口部に重ならない形状である、
請求項4または請求項5に記載の高周波スイッチモジュール。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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CN201680005556.7A CN107210722B (zh) | 2015-02-05 | 2016-02-01 | 高频开关模块 |
KR1020177015606A KR101834246B1 (ko) | 2015-02-05 | 2016-02-01 | 고주파 스위치 모듈 |
JP2016528046A JP6024857B1 (ja) | 2015-02-05 | 2016-02-01 | 高周波スイッチモジュール |
US15/624,874 US10205437B2 (en) | 2015-02-05 | 2017-06-16 | High-frequency switch module |
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JP2015020842 | 2015-02-05 | ||
JP2015-020842 | 2015-02-05 |
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US15/624,874 Continuation US10205437B2 (en) | 2015-02-05 | 2017-06-16 | High-frequency switch module |
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WO2016125720A1 true WO2016125720A1 (ja) | 2016-08-11 |
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JP (1) | JP6024857B1 (ja) |
KR (1) | KR101834246B1 (ja) |
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US20210314007A1 (en) * | 2020-04-05 | 2021-10-07 | Skyworks Solutions, Inc. | Bridge combiners and filters for radio-frequency applications |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005260806A (ja) * | 2004-03-15 | 2005-09-22 | Matsushita Electric Ind Co Ltd | 高周波用スイッチ回路 |
JP2006109084A (ja) * | 2004-10-05 | 2006-04-20 | Sanyo Electric Co Ltd | スイッチングモジュール及びこれを具えた無線通信装置 |
JP2012244615A (ja) * | 2011-05-24 | 2012-12-10 | Taiyo Yuden Co Ltd | 通信モジュール |
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EP2352229A4 (en) * | 2008-11-05 | 2014-11-26 | Hitachi Metals Ltd | HIGH FREQUENCY SWITCHING, HIGH FREQUENCY ELEMENT AND MULTI-BAND COMMUNICATION DEVICE |
KR102223448B1 (ko) * | 2015-02-05 | 2021-03-05 | 가부시키가이샤 무라타 세이사쿠쇼 | 고주파 스위치 모듈 |
JP6455532B2 (ja) * | 2015-02-05 | 2019-01-23 | 株式会社村田製作所 | 高周波スイッチモジュール |
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2016
- 2016-02-01 WO PCT/JP2016/052864 patent/WO2016125720A1/ja active Application Filing
- 2016-02-01 JP JP2016528046A patent/JP6024857B1/ja active Active
- 2016-02-01 CN CN201680005556.7A patent/CN107210722B/zh active Active
- 2016-02-01 KR KR1020177015606A patent/KR101834246B1/ko active IP Right Grant
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2017
- 2017-06-16 US US15/624,874 patent/US10205437B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005260806A (ja) * | 2004-03-15 | 2005-09-22 | Matsushita Electric Ind Co Ltd | 高周波用スイッチ回路 |
JP2006109084A (ja) * | 2004-10-05 | 2006-04-20 | Sanyo Electric Co Ltd | スイッチングモジュール及びこれを具えた無線通信装置 |
JP2012244615A (ja) * | 2011-05-24 | 2012-12-10 | Taiyo Yuden Co Ltd | 通信モジュール |
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KR101834246B1 (ko) | 2018-03-05 |
CN107210722A (zh) | 2017-09-26 |
JP6024857B1 (ja) | 2016-11-16 |
US20170288646A1 (en) | 2017-10-05 |
JPWO2016125720A1 (ja) | 2017-04-27 |
CN107210722B (zh) | 2018-11-23 |
KR20170072351A (ko) | 2017-06-26 |
US10205437B2 (en) | 2019-02-12 |
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