WO2016125674A1 - Semiconductor module, and method for producing semiconductor module - Google Patents

Semiconductor module, and method for producing semiconductor module Download PDF

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Publication number
WO2016125674A1
WO2016125674A1 PCT/JP2016/052463 JP2016052463W WO2016125674A1 WO 2016125674 A1 WO2016125674 A1 WO 2016125674A1 JP 2016052463 W JP2016052463 W JP 2016052463W WO 2016125674 A1 WO2016125674 A1 WO 2016125674A1
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WIPO (PCT)
Prior art keywords
semiconductor module
lead terminals
internal wiring
lead
external lead
Prior art date
Application number
PCT/JP2016/052463
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French (fr)
Japanese (ja)
Inventor
要一 守屋
山本　祐樹
康伸 森下
Original Assignee
株式会社村田製作所
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Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Priority to JP2016573313A priority Critical patent/JP6380561B2/en
Publication of WO2016125674A1 publication Critical patent/WO2016125674A1/en

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Definitions

  • the present invention relates to a semiconductor module, and more particularly, to a semiconductor module in which an external lead terminal is led out from a side surface of a sealing resin.
  • the present invention also relates to a method for manufacturing a semiconductor module, and more particularly to a method for manufacturing a semiconductor module in which external lead-out lead terminals are led out from the side surface of a sealing resin.
  • Semiconductor modules such as inverters are used as power sources for in-vehicle equipment and industrial equipment.
  • a semiconductor module is configured by a combination of a plurality of semiconductor switching elements or a combination of a plurality of switching elements and a plurality of free-wheeling diodes.
  • FIG. 18 shows a semiconductor module (semiconductor device) 500 disclosed in Patent Document 1. However, FIG. 18 is a cross-sectional view of the semiconductor module 500.
  • the semiconductor module 500 includes semiconductor switching elements (IGBTs) 101a and 101b, diodes 102a and 102b, lead terminals 105a, 105b, 105c, 105d, and 105e, heat sinks (heat sinks) 107a and 107b, and a sealing resin 108. It consists of the structure sealed in.
  • IGBTs semiconductor switching elements
  • one power electrode pad (not shown) of the semiconductor switching element 101 a is joined to the lead terminal 105 b by the solder 104, and the other power electrode pad (not shown) is attached to the heat sink 107 a by the solder 104. It is joined.
  • a signal electrode pad (not shown) of the semiconductor switching element 101a is wire-bonded to the lead terminal 105d by a wire 103a.
  • a diode 102a is connected in parallel with the semiconductor switching element 101a between the lead terminal 105b and the heat sink 107a.
  • the heat sink 107a is connected to the lead terminal 105a.
  • one power supply electrode pad (not shown) of the semiconductor switching element 101b is joined to the lead terminal 105b by the solder 104, and the other power supply electrode pad (not shown) is joined to the heat sink 107b by the solder 104.
  • a signal electrode pad (not shown) of the semiconductor switching element 101b is wire-bonded to the lead terminal 105e by a wire 103b.
  • a diode 102b is connected in parallel with the semiconductor switching element 101b between the lead terminal 105b and the heat sink 107b.
  • the heat sink 107b is connected to the lead terminal 105c.
  • the semiconductor switching elements 101a and 101b and the diodes 102a and 102b wired in this way are sealed with a sealing resin 108 together with lead terminals 105a, 105b, 105c, 105d, and 105e, heat radiation plates 107a and 107b, and the like.
  • Lead terminals 105 a, 105 b, 105 c, 105 d, and 105 e are led out from the side surface of the sealing resin 108. Further, the heat sinks 107 a and 107 b are exposed from both main surfaces of the sealing resin 108.
  • the lead terminals 105a, 105b, 105c, 105d, and 105e are derived from a plurality of height portions on the side surface of the sealing resin 108, and are derived from the same height portion. Absent.
  • a lead terminal derived from a sealing resin is bent in the same direction, and the bent lead terminal is inserted into a through hole formed in a substrate of an in-vehicle device or an industrial device. In many cases, it is mounted by soldering.
  • the lead terminals 105a, 105b, 105c, 105d, and 105e are not led out from the same height portion on the side surface of the sealing resin 108, they are bent in the same direction. Was not easy. That is, since the heights of the derived portions are different, the lead terminals 105a, 105b, 105c, 105d, and 105e cannot be bent at a time, and must be bent individually. Therefore, the productivity of bending the lead terminals of the semiconductor module 500 is extremely poor.
  • the present invention has been made in order to solve the above-described conventional problems.
  • the lead terminal includes an internal wiring lead terminal fixed to the insulating base and an external lead lead terminal led out from the sealing resin. In this way, all external lead terminals are led out from the same height portion of the side surface of the sealing resin.
  • the semiconductor module of the present invention at least a plurality of semiconductor switching elements, a plurality of lead terminals, and a plurality of insulating base materials are sealed with a sealing resin, and the lead terminals are insulating base materials.
  • the insulating base material to which the internal wiring lead terminal is fixed is spaced at least vertically and includes at least an internal wiring lead terminal fixed to the external wiring lead terminal led to the outside from the sealing resin.
  • the electrode of the semiconductor switching element is directly or indirectly joined to the internal wiring lead terminal or connected by wire bonding, and one end of each external lead terminal is an insulating base The other end is led out from the sealing resin, and at least some of the outer lead terminals are each provided with a plurality of bent portions. And, all external derivation lead terminals were to be drawn out from the same height portion of the side surface of the sealing resin.
  • each external lead-out lead terminal can be set at a desired interval while downsizing the semiconductor module.
  • the interval between external lead terminals is determined by a request from the board side of an in-vehicle device or an industrial device to which a semiconductor module is mounted. When an internal wiring lead terminal is designed according to the request, the semiconductor module There is concern that will grow.
  • the present invention attempts to reduce the size by arranging the semiconductor switching elements in a hierarchical manner.
  • the internal wiring lead is designed in response to a request for the distance between the lead-out lead terminals from the substrate side, the size is reduced by the hierarchy.
  • the benefits of In contrast, as described above, at least a part of the distance between the external lead terminal and the external lead terminal is moved from the sealing resin toward the tip of the other end of the external lead terminal. If it is spread in the plane direction, it is possible to meet the demand for the distance between the lead terminals from the substrate side without increasing the size of the semiconductor module.
  • Passive components may be further sealed in the sealing resin.
  • the function of the semiconductor module can be enhanced. For example, if a shunt resistor element that detects an abnormal current or a thermistor element that detects abnormal heat generation is incorporated in the sealing resin as a passive component, an abnormality of the semiconductor module can be detected with high accuracy.
  • the electrode of the semiconductor switching element may be joined to the internal wiring lead terminal via a metal block.
  • the distance between the semiconductor switching element and the internal wiring lead terminal can be increased, wire bonding between the other electrode of the semiconductor switching element and the other internal wiring lead terminal is easy. It becomes possible to connect to.
  • the insulating base material arranged in the intermediate layer has an opening penetrating between both main surfaces. It is preferable. In this case, the metal block and the internal wiring lead terminal can be joined at the opening.
  • all the external lead terminals may be bent in the same direction outside the sealing resin.
  • the semiconductor module can be mounted by inserting the bent external lead-out lead terminal into a through-hole formed in a substrate of an in-vehicle device or an industrial device and then soldering.
  • the insulating base material may be made of ceramics, and the lead terminals may be fixed to the insulating substrate through an alloy containing at least an active metal that reacts with the ceramic constituents, Ag, and Cu. .
  • the lead terminal can be firmly fixed to the insulating substrate having high strength.
  • the material of the insulating base material is arbitrary and does not have to be made of ceramics, and may be made of resin. However, when the insulating substrate is made of resin, the lead terminals are often fixed to the insulating substrate with an adhesive.
  • the semiconductor module can be an inverter, for example.
  • the semiconductor module manufacturing method of the present invention includes a step of preparing a plurality of insulating base materials, a step of preparing a plurality of internal wiring lead terminals, and each insulating base material
  • the step of joining to the internal wiring lead terminal is preferably performed in a state where a plurality of external lead-out lead terminals are integrated into one annular lead frame. In this case, the formation of the bent portion in the external lead-out lead terminal and the joining of one end of the external lead-out lead terminal to the internal wiring terminal can be performed very easily and with high productivity.
  • each external lead terminal fixed to the lead frame to one of the internal wiring terminals fixed to the insulating base material
  • the insulating base material to which the wiring lead terminals are fixed is viewed from the direction perpendicular thereto, only one portion of the external lead terminal and the internal wiring lead terminal are overlapped. preferable. In this case, one end of the external lead terminal can be joined to the internal wiring lead terminal very easily and with high productivity.
  • a step of separating an unnecessary lead frame from an external lead terminal derived from the sealing resin may be further provided.
  • a step of bending all the external lead terminals derived from the sealing resin in the same direction may be provided.
  • the manufactured semiconductor module is mounted by inserting the bent external lead-out lead terminal into a through-hole formed in a board of an in-vehicle device or industrial device and then soldering it. Can do.
  • the external lead-out lead terminal is led out from the same height portion of the side surface of the sealing resin, the external lead-out lead terminal derived from the side surface of the sealing resin can be very easily obtained. And it can be bent in the same direction with high productivity. Then, the bent lead terminal can be mounted by being soldered after being inserted into a through hole formed in a substrate of an in-vehicle device or an industrial device.
  • the lead-out lead terminals are led out from the same height portion of the side surface of the sealing resin, so that the size of the semiconductor module is larger than the size of the semiconductor module on a substrate such as an in-vehicle device or an industrial device.
  • the semiconductor device can be mounted by forming a large opening, placing the semiconductor module in the opening, and soldering the external lead-out lead terminal to an electrode pattern formed near the periphery of the opening.
  • FIG. 1A is a perspective view showing the semiconductor module 100 according to the first embodiment.
  • FIG. 1B is a cross-sectional view showing the semiconductor module 100 and shows a portion XX in FIG.
  • FIG. 2 is an exploded perspective view showing the semiconductor module 100.
  • FIG. 3 is an equivalent circuit diagram of the semiconductor module 100.
  • FIG. 4 is a perspective view showing steps applied in an example of a method for manufacturing the semiconductor module 100.
  • FIG. 5 is a perspective view showing steps applied in an example of a method for manufacturing the semiconductor module 100.
  • FIG. 6 is a perspective view showing a process applied in an example of a manufacturing method of the semiconductor module 100.
  • FIG. 7 is a perspective view showing steps applied in an example of a method for manufacturing the semiconductor module 100.
  • FIG. 1A is a perspective view showing the semiconductor module 100 according to the first embodiment.
  • FIG. 1B is a cross-sectional view showing the semiconductor module 100 and shows a portion XX in FIG.
  • FIG. 2 is an exploded
  • FIG. 8 is a perspective view showing steps applied in an example of a method for manufacturing the semiconductor module 100.
  • FIG. 9 is a perspective view showing steps applied in an example of a method for manufacturing the semiconductor module 100.
  • FIG. 10A is a perspective view showing a process applied in an example of a method for manufacturing the semiconductor module 100.
  • FIG. 10B is a plan view thereof.
  • FIG. 10C is a front view thereof.
  • FIG. 11 is a perspective view showing a process applied in an example of a method for manufacturing the semiconductor module 100.
  • FIG. 12 is a perspective view showing a process applied in an example of a method for manufacturing the semiconductor module 100.
  • FIG. 13 is a perspective view showing steps applied in an example of a method for manufacturing the semiconductor module 100.
  • FIG. 10A is a perspective view showing a process applied in an example of a method for manufacturing the semiconductor module 100.
  • FIG. 10B is a plan view thereof.
  • FIG. 10C is a front view thereof.
  • FIG. 11
  • FIG. 14 is a perspective view showing a process applied in an example of a method for manufacturing the semiconductor module 100.
  • FIG. 15A is a cross-sectional view showing a semiconductor module 200 according to the second embodiment.
  • FIG. 15B is an equivalent circuit diagram of the semiconductor module 200.
  • FIG. 16 is a perspective view showing a semiconductor module 300 according to the third embodiment.
  • FIG. 17 is a perspective view showing a semiconductor module 400 according to the fourth embodiment.
  • FIG. 18 is a perspective view showing a conventional semiconductor module 500 disclosed in Patent Document 1. As shown in FIG.
  • First Embodiment 1A, 1B, 2 and 3 show a semiconductor module 100 according to a first embodiment of the present invention.
  • FIG. 1A is a perspective view of the semiconductor module 100.
  • FIG. 1B is a cross-sectional view of the semiconductor module 100 and shows a portion XX in FIG.
  • FIG. In (B) illustration of sealing resin 8 is abbreviate
  • FIG. 2 is an exploded perspective view of the semiconductor module 100. In FIG. 2, the sealing resin 8 is not shown.
  • FIG. 3 is an equivalent circuit diagram of the semiconductor module 100.
  • the semiconductor module 100 includes three rectangular and plate-like insulating bases 6a, 6b, and 6c.
  • the insulating bases 6a, 6b, 6c are made of a resin such as epoxy or polyimide, for example.
  • a rectangular and plate-like heat radiation plate 7a is formed on one main surface (the upper main surface in FIG. 2) of the insulating base 6a.
  • the heat radiating plate 7a is for radiating heat generated by six semiconductor switching elements 1a to 1f described later.
  • an L-shaped and plate-like internal wiring lead terminal 51a is formed on the other main surface (lower main surface in FIG. 2) of the insulating base 6a.
  • a rectangular opening 6b-h is formed in the central portion of the insulating base 6b so as to penetrate between both main surfaces. Further, three main surfaces of one side of the insulating base 6b are provided along one side 6b-x of the two opposite sides 6b-x and 6b-y in a direction perpendicular to the side 6b-x.
  • the I-shaped, plate-like internal wiring lead terminals 52a, 52b, 52c are formed, and three I-shaped elements are formed along the other side 6b-y in a direction perpendicular to the side 6b-y. In shape, plate-like internal wiring lead terminals 52d, 52e, and 52f are formed.
  • the widths of the internal wiring lead terminals 52a, 52b, and 52c are larger than the widths of the internal wiring lead terminals 52d, 52e, and 52f.
  • the internal wiring lead terminals 52a, 52b, and 52c are formed so as to straddle the opening 6b-h, respectively, and the internal wiring lead terminals 52a, 52b, and 52c are the other side of the insulating base 6b in the opening 6b-h portion. It is exposed on the main surface side.
  • An L-shaped, plate-like internal wiring lead terminal 53a is formed on one main surface of the insulating base 6c.
  • the internal wiring lead terminal 53a is led out from one side 6c-x of the insulating base 6c in a direction perpendicular to the side 6c-x. Further, on one main surface of the insulating base 6c, three I-shaped, plate-like internal wirings are formed along the other side 6c-y in a direction perpendicular to the side 6c-y.
  • Lead terminals 53b, 53c, and 53d are formed.
  • the widths of the internal wiring lead terminals 53b, 53c, 53d are the same as the widths of the internal wiring lead terminals 52d, 52e, 52f formed on the insulating base 6b.
  • a rectangular and plate-shaped heat radiation plate 7b is formed on the other main surface of the insulating base 6c.
  • the heat sink 7b is for radiating heat generated by six semiconductor switching elements 1a to 1f described later.
  • a metal such as a copper-based metal, an aluminum-based metal, or an iron-based metal is used.
  • the semiconductor module 100 includes six semiconductor switching elements 1a, 1b, 1c, 1d, 1e, and 1f.
  • MOSFETs are used as the semiconductor switching elements 1a to 1f.
  • Each of the semiconductor switching elements 1a to 1f has one main surface (upper main surface in FIG. 2), one power electrode pad (not shown), and a signal electrode pad (shown with reference numerals).
  • the other power supply electrode pad (not shown) is formed on the other main surface (the lower main surface in FIG. 2).
  • the other power electrode pad is joined to the internal wiring lead terminal 52a formed on the insulating base 6b by the solder 4.
  • the other switching electrode 1b of the semiconductor switching element 1b is joined to the internal wiring lead terminal 52b formed on the insulating base 6b by the solder 4.
  • the other power electrode pad is joined to the internal wiring lead terminal 52c formed on the insulating base 6b by the solder 4.
  • the other power electrode pad is joined to the internal wiring lead terminal 53a formed on the insulating base 6c by the solder 4, respectively.
  • the signal electrode pad of the semiconductor switching element 1a is connected by wire bonding to the internal wiring lead terminal 52d formed on the insulating base 6b by the wire 3a.
  • the signal electrode pad of the semiconductor switching element 1b is connected by wire bonding to the internal wiring lead terminal 52e formed on the insulating base 6b by the wire 3b.
  • the signal electrode pad of the semiconductor switching element 1c is connected by wire bonding to an internal wiring lead terminal 52f formed on the insulating base 6b by a wire 3c.
  • the signal electrode pad of the semiconductor switching element 1d is connected by wire bonding to an internal wiring lead terminal 53b formed on the insulating base 6c by a wire 3d.
  • the signal electrode pad of the semiconductor switching element 1e is connected by wire bonding to the internal wiring lead terminal 53c formed on the insulating base 6c by the wire 3e.
  • the signal electrode pad of the semiconductor switching element 1f is connected by wire bonding to an internal wiring lead terminal 53d formed on the insulating base 6c by a wire 3f.
  • a wire 3f for example, a metal such as aluminum or gold is used.
  • a rectangular parallelepiped metal block 2 a is joined to one power supply electrode pad of the semiconductor switching element 1 a by solder 4.
  • a rectangular parallelepiped metal block 2b is joined to one power supply electrode pad of the semiconductor switching element 1b by solder 4.
  • a rectangular parallelepiped metal block 2c is joined to one power electrode pad of the semiconductor switching element 1c by solder 4.
  • a rectangular parallelepiped metal block 2d is joined by solder 4 to one power supply electrode pad of the semiconductor switching element 1d.
  • a rectangular parallelepiped metal block 2e is joined by solder 4 to one power supply electrode pad of the semiconductor switching element 1e.
  • a rectangular parallelepiped metal block 2 f is joined to one power supply electrode pad of the semiconductor switching element 1 f by solder 4.
  • metals such as copper metal and aluminum metal are used.
  • the metal blocks 2a, 2b, and 2c are joined to the internal wiring lead terminal 51a formed on the insulating base 6a by the solder 4.
  • the metal block 2d is joined to the internal wiring lead terminal 52a formed on the insulating base 6b by the solder 4 at the opening 6b-h.
  • the metal block 2e is joined to the internal wiring lead terminal 52b formed on the insulating base 6b by the solder 4 at the opening 6b-h.
  • the metal block 2f is joined to the internal wiring lead terminal 52c formed on the insulating base 6b by the solder 4 at the opening 6b-h.
  • the three insulating bases 6a, 6b, and 6c are arranged in three layers with a space in the vertical direction through the semiconductor switching elements 1a to 1f and the metal blocks 2a to 2f. Yes.
  • the semiconductor module 100 includes external lead terminals 151a, 152a, 152b, 152c, 152d, 152e, 152f, 153a, 153b, 153c, and 153d.
  • External lead terminals 151a to 153d are I-shaped and have a plate shape.
  • the widths of the external lead terminals 151a, 152a, 152b, 152c, and 153a are larger than the widths of the external lead terminals 152d, 152e, 152f, 153b, 153c, and 153d.
  • External lead terminals 151a, 153a, 153b, 153c, and 153d are bent at two locations, respectively.
  • the internal lead terminals 51a to 53d for example, metals such as copper-based metal, aluminum-based metal, and iron-based metal are used for the external lead-out lead terminals 151a to 153d.
  • the external lead terminals 151a to 153d are joined to the internal wiring lead terminals 51a to 53d by solder (not shown), respectively.
  • the external lead terminals 151a to 153d are joined to the upper side of the internal wiring lead terminals 51a to 53d in all joint portions. .
  • a stress due to a difference in thermal expansion coefficient is generated between the internal sealing resin 8 and the lead terminal each time the ON / OFF is repeated.
  • the stress applied to the external lead terminals 151a to 153d is applied each time ON / OFF is repeated. Take the same direction. For this reason, the distortion of the external lead terminals 151a to 153d themselves is small.
  • the external lead terminal 153a is connected to the lower part of the internal wiring lead terminal 53a, the external lead terminal 153a is connected to the other external lead terminals 151a to 152f by turning on / off. Stress in a direction different from 153b to 153d is applied. As a result, the stress applied to the inside of the external lead-out lead terminal 153a increases, and the life of the terminal is shortened.
  • the external lead-out lead terminals 151a to 153d are joined to the upper side of the internal wiring lead terminals 51a to 53d in all joint portions. Is also important for improving connection reliability for the following reasons.
  • the height position accuracy of the leading end portions of the external lead leads 151a to 153d and the internal wiring leads 51a to 53d, that is, the portions where the lead wires are joined to each other is not necessarily completely constant and may vary. For this reason, the thickness of the joint after joining may vary, and the reliability of the joint may be significantly deteriorated. In an extreme case, a part that is not joined may occur.
  • the external lead-out lead terminals 151a to 153d are joined to the upper side of the internal wiring lead terminals 51a to 53d in all the joints.
  • the external lead terminals 151a to 153d It goes without saying that the lead-out lead terminals 151a to 153d may be joined to the lower side of the internal wiring lead terminals 51a to 53d.
  • the materials 6 a to 6 c and the heat radiating plates 7 a and 7 b are sealed with the sealing resin 8.
  • the sealing resin 8 for example, epoxy, polyimide or the like is used.
  • the heat sinks 7 a and 7 b are exposed on both main surfaces of the sealing resin 8.
  • eleven external lead terminals 151 a to 153 d are led out from the side surface of the sealing resin 8. All the external lead terminals 151a to 153d are bent from the same height portion on the side surface of the sealing resin 8 by bending the external lead terminals 151a, 153a, 153b, 153c, and 153d at two locations, respectively. Has been derived.
  • the external lead-out lead terminals 151a to 153d are led out from the sealing resin 8 so that their main surfaces are horizontal. That is, the main surfaces of the external lead terminals 151 a to 153 d are parallel to the main surface of the sealing resin 8.
  • FIG. 3 shows an equivalent circuit of the semiconductor module 100 having the above structure according to the first embodiment.
  • the semiconductor module 100 is an inverter, and the external lead terminal 153a corresponds to the P-side terminal, and the external lead terminal 151a corresponds to the N-side terminal.
  • the external lead terminals 152a, 152b, and 152c correspond to intermediate terminals, respectively.
  • the external lead terminals 152d, 152e, 152f, 153b, 153c, and 153d correspond to gate terminals, respectively.
  • the semiconductor module 100 according to the first embodiment can be manufactured, for example, by the method shown in FIGS. 4 to 9 and FIGS. 11 to 14 are perspective views. 10A is a perspective view, FIG. 10B is a plan view, and FIG. 10C is a front view.
  • insulating bases 6a to 6c, heat sinks 7a and 7b, and internal wiring lead terminals 51a to 53d are prepared. Subsequently, the heat radiating plates 7a and 7b and the internal wiring lead terminals 51a to 53d are fixed to the insulating bases 6a to 6c. Fixing is performed by, for example, an adhesive. The state after fixing is shown in FIG.
  • the semiconductor switching elements 1a to 1f are prepared. Subsequently, as shown in FIG. 6, the other power supply electrode pads of semiconductor switching elements 1a to 1f (formed on the lower main surface of each semiconductor switching element 1a to 1f in FIG. 6) are soldered (see FIG. 6). To the internal wiring lead terminals 52a to 52c and 53a. More specifically, the other power supply electrode pad of the semiconductor switching element 1a is connected to the internal wiring lead terminal 52a, the other power supply electrode pad of the semiconductor switching element 1b is connected to the internal wiring lead terminal 52b, and the other power supply electrode of the semiconductor switching element 1c. The pads are bonded to the internal wiring lead terminals 52c, respectively. Further, the other power supply electrode pads of the semiconductor switching elements 1d to 1f are respectively joined to the internal wiring lead terminals 53a.
  • the metal blocks 2a to 2f are prepared. Subsequently, as shown in FIG. 7, one power supply electrode pad of the semiconductor switching elements 1a to 1f (formed on the main surface on the upper side of each semiconductor switching element 1a to 1f in FIG. 7) is soldered (not shown).
  • the metal blocks 2a to 2f are joined together. More specifically, the metal block 2a is provided on one power electrode pad of the semiconductor switching element 1a, the metal block 2b is provided on one power electrode pad of the semiconductor switching element 1b, and the metal block is provided on one power electrode pad of the semiconductor switching element 1c.
  • the signal electrode pads of semiconductor switching elements 1a to 1f (not shown but not provided with reference numerals) and internal wiring lead terminals 52d to 52f and 53b to 53d are connected to wires. Connect by wire bonding using 3a to 3f. More specifically, the signal electrode pad of the semiconductor switching element 1a and the internal wiring lead terminal 52d are connected by the wire 3a, the signal electrode pad of the semiconductor switching element 1b and the internal wiring lead terminal 52e are connected by the wire 3b, and the semiconductor switching element 1c.
  • the signal electrode pad and the internal wiring lead terminal 52f are connected by a wire 3c, the signal electrode pad of the semiconductor switching element 1d and the internal wiring lead terminal 53b are connected by a wire 3d, and the signal electrode pad and the internal wiring lead terminal 53c of the semiconductor switching element 1e are connected.
  • the wire 3e is used to connect the signal electrode pad of the semiconductor switching element 1f and the internal wiring lead terminal 53d by wire bonding using the wire 3f.
  • the metal blocks 2a to 2f and the internal wiring lead terminals 51a and 52a to 52c are joined by solder (not shown). More specifically, the metal blocks 2a to 2c and the internal wiring lead terminal 51a are joined to each other.
  • the metal block 2d and the internal wiring lead terminal 52a, the metal block 2e and the internal wiring lead terminal 52b, the metal block 2f and the internal wiring lead terminal 52c, respectively, are formed in the insulating base 6b. It joins in h part.
  • the internal wiring lead terminals 51a to 53d Insulating base materials 6a to 6c to which are fixed, semiconductor switching elements 1a to 1f, metal blocks 2a to 2f, and wires 3a to 3f are integrated.
  • external lead terminals 151a to 153d are manufactured. Specifically, a single metal plate is prepared, and the metal plate is punched out with a mold to produce external lead terminals 151a to 153d having a predetermined shape. After punching, the external lead terminals 151 a to 153 d are connected to one annular lead frame 150. Further, the external lead terminals 151a, 152a to 152c, 153a are connected to each other at intermediate portions by tie bars 155a. Further, the external lead terminals 152d to 152f and 153b to 153d are connected to each other at intermediate portions by tie bars 155b. Further, the external lead terminals 151a and 153a to 153d are bent at two points, respectively. The external lead terminal 151a is bent upward in FIG. The external lead terminals 153a to 153d are bent downward in FIG.
  • the external lead-out lead terminals 151a to 153d connected to the lead frame 150 are arranged above the integrated insulating bases 6a to 6c.
  • the integrated insulating bases 6 a to 6 c may be disposed above the external lead terminals 151 a to 153 d connected to the lead frame 150.
  • the external lead terminals 151a to 153d are joined to the internal wiring lead terminals 51a to 53d by solder (not shown).
  • solder not shown
  • the lead frame 150 in which the external lead terminals 151a to 153d are integrated and the insulating base materials 6a to 6c to which the internal wiring lead terminals 51a to 53d are fixed are viewed from the direction perpendicular thereto. Since only one portion of the external lead terminals 151a to 153d and the internal wiring terminals 51a to 53d are overlapped, the connection between the external lead terminals 151a to 153d and the internal wiring lead terminals 51a to 53d is as follows. It can be done very easily.
  • a load is applied to the entire external lead leads 151a to 153d so that all joining parts have a constant thickness. It is preferable to do.
  • the height position accuracy of the leading end portions of the external lead leads 151a to 153d and the internal wiring leads 51a to 53d, that is, the portions where the lead wires are joined to each other is not necessarily completely constant and may vary. For this reason, the thickness of the joint after joining may vary, and the reliability of the joint may be significantly deteriorated. In an extreme case, a part that is not joined may occur. Therefore, the connection reliability can be improved by performing the above operation before or during bonding.
  • the semiconductor switching elements 1a to 1f, metal blocks 2a to 2f, wires 3a to 3f, internal wiring lead terminals 51a to 53d, heat sinks 7a and 7b, and external lead-out lead terminals 151a to 153d are integrated.
  • the formed insulating bases 6a to 6c are accommodated in a mold (not shown) with the other ends of the external lead terminals 151a to 153d led out to the outside.
  • a resin is transfer-molded in the mold to form the sealing resin 8, and the semiconductor switching elements 1a to 1f and the metal blocks 2a to 2f are formed in the sealing resin 8.
  • the wires 3a to 3f, the internal wiring lead terminals 51a to 53d, the heat sinks 7a and 7b, and the external lead-out lead terminals 151a to 153d are sealed.
  • the heat sinks 7 a and 7 b are exposed from both main surfaces of the sealing resin 8.
  • Eleven external lead terminals 151 a to 153 d are led out from the side surface of the sealing resin 8.
  • the semiconductor module 100 has a structure in which the external lead terminals 151a to 153d are led out from the same height portion on the side surface of the sealing resin 8, a mold (resin sealing) of the sealing resin 8 is performed. It can be done very easily. In addition, the mold used for the mold can be easily designed, and the cost can be kept low.
  • the unnecessary lead frame 150 and tie bars 155a and 155b are separated from the external lead terminals 151a to 153d, and the semiconductor module 100 according to the first embodiment is completed.
  • the semiconductor module 100 all the external lead terminals 151 a to 153 d are led out from the same height portion of the side surface of the sealing resin 8.
  • FIGS. 15A is a cross-sectional view of the semiconductor module 200.
  • FIG. 15B is an equivalent circuit diagram of the semiconductor module 200.
  • the semiconductor module 200 In the semiconductor module 200 according to the second embodiment, three shunt resistor elements 10 are added to the semiconductor module 100 according to the first embodiment shown in FIGS. Specifically, as shown in FIG. 15A, the semiconductor module 200 has a shunt resistor element 10 added thereto.
  • the semiconductor module 200 replaces one internal wiring lead terminal 52c fixed to the insulating base 6 in the semiconductor module 100 according to the first embodiment with two internal wiring leads. Terminals 52g and 52h are replaced. Then, a shunt resistor element 10 having a pair of electrode pads formed on the bottom surface is prepared, and one electrode pad is joined to the internal wiring lead terminal 52g and the other electrode pad is joined to the internal wiring lead terminal 52h by the solder 4. ing.
  • the other power supply electrode pad (not shown) of the semiconductor switching element 1c is joined to the internal wiring lead terminal 52g instead of the internal wiring lead terminal 52c joined in the semiconductor module 100 according to the first embodiment. ing.
  • the remaining two shunt resistor elements 10 are also added to the semiconductor module 200 by the same method.
  • the semiconductor module 200 includes an equivalent circuit shown in FIG. That is, the shunt resistance element 10 is inserted between the connection point of the semiconductor switching elements 1a and 1d and the external connection lead terminal 152a that is an intermediate terminal. Further, the shunt resistor element 10 is inserted between the connection point of the semiconductor switching elements 1b and 1e and the external connection lead terminal 152b which is an intermediate terminal. Further, the shunt resistor element 10 is inserted between the connection point of the semiconductor switching elements 1c and 1f and the external connection lead terminal 152c which is an intermediate terminal.
  • the semiconductor module 200 can detect the occurrence of an abnormal current by monitoring the voltage between both power supply electrode pads of each shunt resistance element 10.
  • FIG. 16 is a perspective view of the semiconductor module 300.
  • the other configuration of the semiconductor module 300 is the same as that of the semiconductor module 100.
  • the external lead terminals 151a to 153d are led out from the same height portion on the side surface of the sealing resin 8, they can be bent together in the same direction easily.
  • the bent external lead terminals 151a to 153d are formed on a substrate (not shown) such as an in-vehicle device or an industrial device. It can be mounted by inserting into the through-hole and soldering.
  • FIG. 17 is a perspective view of the semiconductor module 400.
  • the terminals 252d, 253b, 252e, 253c, 252f, and 253d were replaced.
  • the other configuration of the semiconductor module 400 is the same as that of the semiconductor module 100.
  • each interval between the external lead terminals 252d, 253b, 252e, 253c, 252f, and 253d is from the sealing resin 8 toward the tip of each other end of the external lead terminals 252d to 253d. It spreads in the plane direction.
  • the distance between the external lead terminals 252d to 253d can be set to a desired size while maintaining the miniaturization of the semiconductor module.
  • the material of the components of the semiconductor module 100 according to the first embodiment is partially changed. Since the structure itself is not changed, the semiconductor module 500 will be described with reference to FIGS. 1 and 2 illustrating the semiconductor module 100.
  • the semiconductor module 100 resins such as epoxy and polyimide are used for the insulating bases 6a to 6c.
  • ceramics are used for the insulating bases 6a to 6d. More specifically, for example, a ceramic mainly composed of silicon nitride, aluminum nitride, alumina, or the like is used as the ceramic constituting the insulating bases 6a to 6c.
  • an adhesive is used for fixing the lead terminals 51a, 52a to 52f, 53a to 53d to the insulating bases 6a to 6c.
  • an alloy (not shown) containing at least an active metal that reacts with the components of the ceramic, Ag, and Cu is used to fix this portion.
  • Ti is contained in the alloy as an active metal that reacts with the constituent components of the ceramic.
  • the active metal that reacts with the components contained in the ceramic is not limited to Ti, and may be other metals such as Zr.
  • the active metal which reacts with the structural component of ceramics, the alloy containing Ag and Cu may be called an active metal brazing material.
  • Ti, Zn, Sn, In, Ni, Mn, Cd, etc. are used to adjust the melting point as necessary.
  • One or more selected metals may be added.
  • Ti added as an active component that reacts with components contained in the ceramic also plays a role of adjusting the melting point.
  • the addition amount of Ti is 3 weight% or less with respect to the total weight of an alloy. This is because if the Ti content exceeds 3% by weight, the alloy itself may become brittle.
  • the compounding ratio of the alloy 6 is set to Ag 60 to 80% by weight, Cu 20 to 40% by weight, and Ti 1 to 3% by weight.
  • the other configuration of the semiconductor module 500 is the same as that of the semiconductor module 100.
  • the lead terminals 51a, 52a to 52f, 53a to 53d are fixed to the insulating bases 6a to 6c in advance by applying a paste made of an active metal brazing material to the lead terminals 51a, 52a to 52f, 53a to 53d,
  • the coating can be performed by bringing the coated surface into contact with the insulating bases 6a to 6c and performing a heat treatment at a temperature equal to or higher than the melting point of the active metal brazing material.
  • An alloy containing an active metal that reacts with a component of ceramic, Ag, and Cu firmly joins the lead terminals 51a, 52a to 52f, and 53a to 53d to the insulating bases 6a to 6c.
  • silicon nitride is used for the insulating bases 6a to 6c
  • Cu is used for the lead terminals 51a, 52a to 52f, 53a to 53d, and both are joined by an alloy containing Ag and Cu to which Ti is added, TiN and MN are formed in the vicinity of the alloy insulating substrates (silicon nitride substrates) 6a to 6c (where M is an alloy of Si, Cu, and Ti).
  • the Ti concentration in the vicinity of the insulating substrates 6a to 6c of the alloy is higher than the Ti concentration in other portions of the alloy.
  • the lead terminals 2a to 2e and the insulating substrates 6a to 6c are bonded with high strength.
  • an alloy containing an active metal that reacts with a constituent component of ceramic, Ag, and Cu generally has a higher thermal conductivity than an adhesive. Therefore, in the semiconductor module 500, the heat generated by the semiconductor switching elements 1a to 1f passes through the lead terminals 51a, 52a to 52f, 53a to 53d, and further passes through the insulating bases 6a to 6c. Can be dissipated.
  • the lead terminals 51a, 52a to 52f, and 53a to 53d are formed on the insulating bases 6a to 6c made of ceramics having high strength. Since it is firmly joined through an alloy containing an active metal that reacts, Ag, and Cu, it has high strength. Moreover, it is excellent also in heat dissipation.
  • MOSFETs are used as the semiconductor switching elements 1a to 1f.
  • a circuit is formed by combining an IGBT (Insulated Gate Bipolar Transistor) and a free wheel diode. You may make it comprise.
  • IGBT Insulated Gate Bipolar Transistor
  • insulating bases 6a to 6c are used and arranged in three layers, but more insulating bases are used and further stacked in multiple layers. May be arranged.
  • the circuit configuration of the semiconductor module of the present invention is arbitrary, and is not limited to the equivalent circuit of the semiconductor modules 100 to 500.
  • the shunt resistor element 10 is added and sealed as a passive element in the sealing resin 8.
  • a thermistor element for monitoring abnormal heat generation is used as the sealing resin. 8 may be sealed.
  • the external lead-out lead terminals 151a to 253d are formed so as to lead to the outside from the height position of the substantially central portion of the side surface of the sealing resin 8. You may make it derive

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Abstract

All external lead-out lead terminals are led out to the exterior from sections having the same height as the side surface of a sealing resin. Lead terminals are formed by internal-wiring lead terminals (51a-53d) fixed to insulating substrates (6a-6c), and external lead-out lead terminals (151a-153d) which are led out to the exterior from the sealing resin. The lead terminals are configured such that the internal-wiring lead terminals (51a-53d) and the external lead-out lead terminals (151a-153d) are joined to each other. Among the external lead-out lead terminals (151a-153d), the external lead-out lead terminals (151a and 153a-153d) are respectively provided with a plurality of bent sections.

Description

半導体モジュールおよび半導体モジュールの製造方法Semiconductor module and method for manufacturing semiconductor module
　本発明は、半導体モジュールに関し、さらに詳しくは、外部導出リード端子が封止樹脂の側面から外部に導出された半導体モジュールに関する。 The present invention relates to a semiconductor module, and more particularly, to a semiconductor module in which an external lead terminal is led out from a side surface of a sealing resin.
　また、本発明は、半導体モジュールの製造方法に関し、さらに詳しくは、外部導出リード端子が封止樹脂の側面から外部に導出された半導体モジュールの製造方法に関する。 The present invention also relates to a method for manufacturing a semiconductor module, and more particularly to a method for manufacturing a semiconductor module in which external lead-out lead terminals are led out from the side surface of a sealing resin.
　インバータ等の半導体モジュールが、車載機器、産業用機器等の電源に使用されている。 Semiconductor modules such as inverters are used as power sources for in-vehicle equipment and industrial equipment.
　半導体モジュールは、特許文献１（特開２０１４－１８３０７８号公報）に開示されるように、複数の半導体スイッチング素子の組合せ、あるいは、複数のスイッチング素子と複数の還流ダイオードとの組合せで回路が構成される。また、半導体モジュールに、周辺回路の受動素子が組込まれる場合もある。 As disclosed in Patent Document 1 (Japanese Patent Application Laid-Open No. 2014-183078), a semiconductor module is configured by a combination of a plurality of semiconductor switching elements or a combination of a plurality of switching elements and a plurality of free-wheeling diodes. The In some cases, passive elements of peripheral circuits are incorporated in the semiconductor module.
　図１８に、特許文献１に開示された半導体モジュール（半導体装置）５００を示す。ただし、図１８は、半導体モジュール５００の断面図である。 FIG. 18 shows a semiconductor module (semiconductor device) 500 disclosed in Patent Document 1. However, FIG. 18 is a cross-sectional view of the semiconductor module 500.
　半導体モジュール５００は、半導体スイッチング素子（ＩＧＢＴ）１０１ａ、１０１ｂと、ダイオード１０２ａ、１０２ｂとが、リード端子１０５ａ、１０５ｂ、１０５ｃ、１０５ｄ、１０５ｅ、放熱板（ヒートシンク）１０７ａ、１０７ｂ等とともに、封止樹脂１０８に封止された構造からなる。 The semiconductor module 500 includes semiconductor switching elements (IGBTs) 101a and 101b, diodes 102a and 102b, lead terminals 105a, 105b, 105c, 105d, and 105e, heat sinks (heat sinks) 107a and 107b, and a sealing resin 108. It consists of the structure sealed in.
　具体的には、半導体スイッチング素子１０１ａの一方の電源電極パッド（図示せず）が、はんだ１０４によりリード端子１０５ｂに接合され、他方の電源電極パッド（図示せず）が、はんだ１０４によりヒートシンク１０７ａに接合されている。また、半導体スイッチング素子１０１ａの信号電極パッド（図示せず）が、ワイヤー１０３ａによりリード端子１０５ｄにワイヤーボンディングされている。さらに、リード端子１０５ｂとヒートシンク１０７ａとの間には、ダイオード１０２ａが、半導体スイッチング素子１０１ａと並列に接続されている。そして、ヒートシンク１０７ａが、リード端子１０５ａに接続されている。 Specifically, one power electrode pad (not shown) of the semiconductor switching element 101 a is joined to the lead terminal 105 b by the solder 104, and the other power electrode pad (not shown) is attached to the heat sink 107 a by the solder 104. It is joined. A signal electrode pad (not shown) of the semiconductor switching element 101a is wire-bonded to the lead terminal 105d by a wire 103a. Furthermore, a diode 102a is connected in parallel with the semiconductor switching element 101a between the lead terminal 105b and the heat sink 107a. The heat sink 107a is connected to the lead terminal 105a.
　同様に、半導体スイッチング素子１０１ｂの一方の電源電極パッド（図示せず）が、はんだ１０４によりリード端子１０５ｂに接合され、他方の電源電極パッド（図示せず）が、はんだ１０４によりヒートシンク１０７ｂに接合されている。また、半導体スイッチング素子１０１ｂの信号電極パッド（図示せず）が、ワイヤー１０３ｂによりリード端子１０５ｅにワイヤーボンディングされている。さらに、リード端子１０５ｂとヒートシンク１０７ｂとの間には、ダイオード１０２ｂが、半導体スイッチング素子１０１ｂと並列に接続されている。そして、ヒートシンク１０７ｂが、リード端子１０５ｃに接続されている。 Similarly, one power supply electrode pad (not shown) of the semiconductor switching element 101b is joined to the lead terminal 105b by the solder 104, and the other power supply electrode pad (not shown) is joined to the heat sink 107b by the solder 104. ing. A signal electrode pad (not shown) of the semiconductor switching element 101b is wire-bonded to the lead terminal 105e by a wire 103b. Furthermore, a diode 102b is connected in parallel with the semiconductor switching element 101b between the lead terminal 105b and the heat sink 107b. The heat sink 107b is connected to the lead terminal 105c.
　このように配線された半導体スイッチング素子１０１ａ、１０１ｂ、ダイオード１０２ａ、１０２ｂは、リード端子１０５ａ、１０５ｂ、１０５ｃ、１０５ｄ、１０５ｅ、放熱板１０７ａ、１０７ｂ等とともに、封止樹脂１０８に封止されている。そして、封止樹脂１０８の側面から、リード端子１０５ａ、１０５ｂ、１０５ｃ、１０５ｄ、１０５ｅが導出されている。また、封止樹脂１０８の両主面から、ヒートシンク１０７ａ、１０７ｂが露出されている。 The semiconductor switching elements 101a and 101b and the diodes 102a and 102b wired in this way are sealed with a sealing resin 108 together with lead terminals 105a, 105b, 105c, 105d, and 105e, heat radiation plates 107a and 107b, and the like. Lead terminals 105 a, 105 b, 105 c, 105 d, and 105 e are led out from the side surface of the sealing resin 108. Further, the heat sinks 107 a and 107 b are exposed from both main surfaces of the sealing resin 108.
特開２０１４－１８３０７８号公報JP 2014-183078 A
　上述した従来の半導体モジュール５００においては、リード端子１０５ａ、１０５ｂ、１０５ｃ、１０５ｄ、１０５ｅが、封止樹脂１０８の側面の複数の高さ部分から導出されており、同一の高さ部分から導出されていない。 In the conventional semiconductor module 500 described above, the lead terminals 105a, 105b, 105c, 105d, and 105e are derived from a plurality of height portions on the side surface of the sealing resin 108, and are derived from the same height portion. Absent.
　ところで、インバータ等の半導体モジュールは、封止樹脂から導出されたリード端子を同一方向に折り曲げ、折り曲げられたリード端子を、車載機器や産業用機器等の基板に形成された貫通孔に挿入したうえで、はんだ付けして実装することが多い。 By the way, in a semiconductor module such as an inverter, a lead terminal derived from a sealing resin is bent in the same direction, and the bent lead terminal is inserted into a through hole formed in a substrate of an in-vehicle device or an industrial device. In many cases, it is mounted by soldering.
　しかしながら、上述した従来の半導体モジュール５００は、リード端子１０５ａ、１０５ｂ、１０５ｃ、１０５ｄ、１０５ｅが、封止樹脂１０８の側面の同一の高さ部分から導出されていないため、これらを同一方向に折り曲げることは容易ではなかった。すなわち、導出されている部分の高さが異なるため、リード端子１０５ａ、１０５ｂ、１０５ｃ、１０５ｄ、１０５ｅを一括して折り曲げることができず、個別に折り曲げなければならなかった。したがって、半導体モジュール５００のリード端子の折り曲げ作業は、極めて生産性が悪かった。 However, in the conventional semiconductor module 500 described above, since the lead terminals 105a, 105b, 105c, 105d, and 105e are not led out from the same height portion on the side surface of the sealing resin 108, they are bent in the same direction. Was not easy. That is, since the heights of the derived portions are different, the lead terminals 105a, 105b, 105c, 105d, and 105e cannot be bent at a time, and must be bent individually. Therefore, the productivity of bending the lead terminals of the semiconductor module 500 is extremely poor.
　本発明は、上述した従来の問題を解決するためになされたものであり、リード端子を、絶縁基材に固定された内部配線リード端子と、封止樹脂から外部に導出された外部導出リード端子とで構成することにより、全ての外部導出リード端子を、封止樹脂の側面の同じ高さ部分から外部に導出するようにしたものである。 The present invention has been made in order to solve the above-described conventional problems. The lead terminal includes an internal wiring lead terminal fixed to the insulating base and an external lead lead terminal led out from the sealing resin. In this way, all external lead terminals are led out from the same height portion of the side surface of the sealing resin.
　具体的には、本発明の半導体モジュールは、少なくとも、複数の半導体スイッチング素子と、複数のリード端子と、複数の絶縁基材とが、封止樹脂に封止され、リード端子が、絶縁基材に固定された内部配線リード端子と、封止樹脂から外部に導出された外部導出リード端子と、を備え、内部配線リード端子が固定された絶縁基材は、上下方向に間隔を開けて、少なくとも３層に分けて配置され、半導体スイッチング素子の電極は、内部配線リード端子に、直接または間接に接合されるか、あるいは、ワイヤーボンディングにより接続され、各外部導出リード端子は、一端が絶縁基材に固定された内部配線リード端子に接合され、他端が、封止樹脂から導出され、外部導出リード端子の少なくとも一部のものは、それぞれ、複数の屈曲部を有し、全ての外部導出リード端子は、封止樹脂の側面の同じ高さ部分から外部に導出されるようにした。 Specifically, in the semiconductor module of the present invention, at least a plurality of semiconductor switching elements, a plurality of lead terminals, and a plurality of insulating base materials are sealed with a sealing resin, and the lead terminals are insulating base materials. The insulating base material to which the internal wiring lead terminal is fixed is spaced at least vertically and includes at least an internal wiring lead terminal fixed to the external wiring lead terminal led to the outside from the sealing resin. Arranged in three layers, the electrode of the semiconductor switching element is directly or indirectly joined to the internal wiring lead terminal or connected by wire bonding, and one end of each external lead terminal is an insulating base The other end is led out from the sealing resin, and at least some of the outer lead terminals are each provided with a plurality of bent portions. And, all external derivation lead terminals were to be drawn out from the same height portion of the side surface of the sealing resin.
　なお、全ての外部導出リード端子が封止樹脂の側面の同じ高さ部分から外部に導出されるとは、製造ばらつき等により僅かな寸法分ずれて外部に導出される場合をも含む概念であり、実質的に同じ高さから外部に導出される、略同じ高さから外部に導出される、という意味である。 It should be noted that the fact that all the external lead terminals are led out from the same height part of the side surface of the sealing resin is a concept including the case where the lead terminals are led out by a slight dimensional deviation due to manufacturing variation or the like. , Derived from substantially the same height to the outside, and derived from substantially the same height to the outside.
　また、封止樹脂および外部導出リード端子を平面視した場合に、外部導出リード端子と外部導出リード端子との間の間隔（ピッチ）のうち、少なくとも一部の間隔が、封止樹脂から外部導出リード端子の他端の先端方向に向かって、平面方向に広がっているようにしても良い。この場合には、半導体モジュールを小型化しながら、各外部導出リード端子を所望の間隔に設定することができる。一般的に、外部導出リード端子の間隔は、半導体モジュールが装着される車載機器や産業用機器等の基板側からの要請で決定されるが、その要請に従って内部配線リード端子を設計すると、半導体モジュールが大きくなってしまうという懸念がある。すなわち、本発明は、半導体スイッチング素子を階層化して配置することにより小型化を図っているが、基板側からの外部導出リード端子の間隔の要請により内部配線リードを設計すると、階層化による小型化のメリットを活かせない懸念がある。これに対し、上述のように、外部導出リード端子と外部導出リード端子との間の間隔のうち、少なくとも一部のものを、封止樹脂から外部導出リード端子の他端の先端方向に向かって、平面方向に広がるようにすれば、半導体モジュールを大型化させることなく、基板側からの外部導出リード端子の間隔の要請に応えることができる。 In addition, when the sealing resin and the external lead terminal are viewed in plan, at least a part of the distance (pitch) between the external lead terminal and the external lead terminal is externally derived from the sealing resin. You may make it spread in the plane direction toward the front-end | tip direction of the other end of a lead terminal. In this case, each external lead-out lead terminal can be set at a desired interval while downsizing the semiconductor module. Generally, the interval between external lead terminals is determined by a request from the board side of an in-vehicle device or an industrial device to which a semiconductor module is mounted. When an internal wiring lead terminal is designed according to the request, the semiconductor module There is concern that will grow. In other words, the present invention attempts to reduce the size by arranging the semiconductor switching elements in a hierarchical manner. However, if the internal wiring lead is designed in response to a request for the distance between the lead-out lead terminals from the substrate side, the size is reduced by the hierarchy. There are concerns that the benefits of. In contrast, as described above, at least a part of the distance between the external lead terminal and the external lead terminal is moved from the sealing resin toward the tip of the other end of the external lead terminal. If it is spread in the plane direction, it is possible to meet the demand for the distance between the lead terminals from the substrate side without increasing the size of the semiconductor module.
　封止樹脂に、さらに受動部品を封止するようにしても良い。この場合には、半導体モジュールを高機能化させることができる。たとえば、受動部品として、封止樹脂内に、異常電流を検出するシャント抵抗素子や、異常発熱を検出するサーミスタ素子を組込めば、高い精度で、半導体モジュールの異常を検出することができる。 Passive components may be further sealed in the sealing resin. In this case, the function of the semiconductor module can be enhanced. For example, if a shunt resistor element that detects an abnormal current or a thermistor element that detects abnormal heat generation is incorporated in the sealing resin as a passive component, an abnormality of the semiconductor module can be detected with high accuracy.
　半導体スイッチング素子の電極を、金属ブロックを介して、内部配線リード端子に接合するようにしても良い。この場合には、半導体スイッチング素子と内部配線リード端子との間の距離を大きくすることができるため、半導体スイッチング素子の他の電極と、他の内部配線リード端子との間を、ワイヤーボンディングにより容易に接続することが可能になる。 The electrode of the semiconductor switching element may be joined to the internal wiring lead terminal via a metal block. In this case, since the distance between the semiconductor switching element and the internal wiring lead terminal can be increased, wire bonding between the other electrode of the semiconductor switching element and the other internal wiring lead terminal is easy. It becomes possible to connect to.
　また、少なくとも３層に分けて配置された、内部配線リード端子が固定された絶縁基材のうち、中間の層に配置された絶縁基材には、両主面間を貫通した開口が形成されていることが好ましい。この場合には、その開口の部分において、金属ブロックと内部配線リード端子との接合を行うことができる。 In addition, among the insulating base materials arranged in at least three layers and having the internal wiring lead terminals fixed, the insulating base material arranged in the intermediate layer has an opening penetrating between both main surfaces. It is preferable. In this case, the metal block and the internal wiring lead terminal can be joined at the opening.
　また、全ての外部導出リード端子は、封止樹脂の外部で、同一方向に屈曲されていても良い。この場合には、屈曲された外部導出リード端子を、車載機器や産業用機器等の基板に形成された貫通孔に挿入したうえで、はんだ付けすることにより、半導体モジュールを実装することができる。 Also, all the external lead terminals may be bent in the same direction outside the sealing resin. In this case, the semiconductor module can be mounted by inserting the bent external lead-out lead terminal into a through-hole formed in a substrate of an in-vehicle device or an industrial device and then soldering.
　また、絶縁基材がセラミックスからなり、リード端子が、少なくとも、セラミックスの構成成分と反応する活性な金属と、Ａｇと、Ｃｕとを含む合金を介して、絶縁基板に固定されたものとしても良い。この場合には、高い強度を備えた絶縁基板に、リード端子を強固に固定することができる。なお、絶縁基材の材料は任意であり、セラミックス製である必要はなく、樹脂製などであっても良い。ただし、絶縁基板が樹脂製である場合は、リード端子は、接着剤によって絶縁基板に固定される場合が多い。 Further, the insulating base material may be made of ceramics, and the lead terminals may be fixed to the insulating substrate through an alloy containing at least an active metal that reacts with the ceramic constituents, Ag, and Cu. . In this case, the lead terminal can be firmly fixed to the insulating substrate having high strength. The material of the insulating base material is arbitrary and does not have to be made of ceramics, and may be made of resin. However, when the insulating substrate is made of resin, the lead terminals are often fixed to the insulating substrate with an adhesive.
　半導体モジュールは、たとえば、インバータとすることができる。 The semiconductor module can be an inverter, for example.
　また、上述した従来の問題を解決するために、本発明の半導体モジュールの製造方法は、複数の絶縁基材を準備する工程と、複数の内部配線リード端子を準備する工程と、各絶縁基材に、内部配線リード端子を固定する工程と、複数の半導体スイッチング素子を準備する工程と、半導体スイッチング素子の電極を、絶縁基材に固定されたいずれかの内部配線リード端子に、直接または間接に接合するか、あるいは、ワイヤーボンディングにより接続することにより、半導体スイッチング素子を介して、絶縁基材を少なくとも３層に重ねて一体化する工程と、複数の外部導出リード端子を準備する工程と、外部導出リード端子の少なくとも一部のものに、それぞれ、複数の屈曲部を形成する工程と、各外部導出リード端子の一端を、絶縁基材に固定されたいずれかの内部配線リード端子に接合する工程と、一体化された、複数の半導体スイッチング素子と、複数の絶縁基材と、複数の内部配線リード端子と、複数の外部導出リード端子とを、各外部導出リード端子の他端を外部に導出させて樹脂封止する工程と、を備え、全ての外部導出リード端子が、封止樹脂の側面の同じ高さ部分から外部に導出されるようにした。 In addition, in order to solve the above-described conventional problems, the semiconductor module manufacturing method of the present invention includes a step of preparing a plurality of insulating base materials, a step of preparing a plurality of internal wiring lead terminals, and each insulating base material In addition, the step of fixing the internal wiring lead terminal, the step of preparing a plurality of semiconductor switching elements, and the electrode of the semiconductor switching element directly or indirectly to any of the internal wiring lead terminals fixed to the insulating substrate Bonding or connecting by wire bonding to integrate at least three layers of insulating base materials via a semiconductor switching element, preparing a plurality of external lead terminals, and external A step of forming a plurality of bent portions on at least a part of the lead-out lead terminals, and one end of each external lead-out lead terminal with an insulating base Bonding to any of the fixed internal wiring lead terminals, a plurality of integrated semiconductor switching elements, a plurality of insulating substrates, a plurality of internal wiring lead terminals, and a plurality of external lead-out lead terminals The other end of each lead-out lead terminal is led to the outside and resin-sealed, and all the lead-out lead terminals are led out from the same height portion of the side surface of the sealing resin. I did it.
　少なくとも、複数の外部導出リード端子を準備する工程と、外部導出リード端子の少なくとも一部のものに屈曲部を形成する工程と、各外部導出リード端子の一端を、絶縁基材に固定されたいずれかの内部配線リード端子に接合する工程は、複数の外部導出リード端子が、１つの環状のリードフレームに一体化された状態で行うことが好ましい。この場合には、外部導出リード端子への屈曲部の形成、および、外部導出リード端子の一端の内部配線端子への接合を、極めて容易に、かつ高い生産性で行うことができる。 At least a step of preparing a plurality of external lead-out lead terminals, a step of forming a bent portion on at least a part of the external lead-out lead terminals, and one of the external lead-out lead terminals fixed to an insulating base The step of joining to the internal wiring lead terminal is preferably performed in a state where a plurality of external lead-out lead terminals are integrated into one annular lead frame. In this case, the formation of the bent portion in the external lead-out lead terminal and the joining of one end of the external lead-out lead terminal to the internal wiring terminal can be performed very easily and with high productivity.
　また、リードフレームに固定された各外部導出リード端子の一端を、絶縁基材に固定されたいずれかの内部配線端子に接合する工程において、外部導出リード端子が一体化されたリードフレームと、内部配線リード端子が固定された絶縁基材とを、これらに対して垂直方向から見た場合、外部導出リード端子の一端と、内部配線リード端子との、接合される部分のみが重なっていることが好ましい。この場合には、外部導出リード端子の一端の内部配線リード端子への接合を、極めて容易に、かつ高い生産性で行うことができる。 In addition, in the step of joining one end of each external lead terminal fixed to the lead frame to one of the internal wiring terminals fixed to the insulating base material, When the insulating base material to which the wiring lead terminals are fixed is viewed from the direction perpendicular thereto, only one portion of the external lead terminal and the internal wiring lead terminal are overlapped. preferable. In this case, one end of the external lead terminal can be joined to the internal wiring lead terminal very easily and with high productivity.
　また、樹脂封止する工程の後に、さらに、封止樹脂から導出された外部導出リード端子から、不要なリードフレームを切り離す工程を備えるようにしても良い。 Further, after the resin sealing step, a step of separating an unnecessary lead frame from an external lead terminal derived from the sealing resin may be further provided.
　さらに、封止樹脂から導出された全ての外部導出リード端子を、同一方向に屈曲する工程を備えるようにしても良い。この場合には、製造された半導体モジュールは、屈曲された外部導出リード端子を、車載機器や産業用機器等の基板に形成された貫通孔に挿入したうえで、はんだ付けすることにより実装することができる。 Furthermore, a step of bending all the external lead terminals derived from the sealing resin in the same direction may be provided. In this case, the manufactured semiconductor module is mounted by inserting the bent external lead-out lead terminal into a through-hole formed in a board of an in-vehicle device or industrial device and then soldering it. Can do.
　本発明の半導体モジュールは、外部導出リード端子が、封止樹脂の側面の同一の高さ部分から導出されているため、封止樹脂の側面から導出された外部導出リード端子を、極めて容易に、かつ高い生産性で、同一方向に折り曲げることができる。そして、折り曲げられたリード端子を、車載機器や産業用機器等の基板に形成された貫通孔に挿入したうえで、はんだ付けすることにより実装することができる。 In the semiconductor module of the present invention, since the external lead-out lead terminal is led out from the same height portion of the side surface of the sealing resin, the external lead-out lead terminal derived from the side surface of the sealing resin can be very easily obtained. And it can be bent in the same direction with high productivity. Then, the bent lead terminal can be mounted by being soldered after being inserted into a through hole formed in a substrate of an in-vehicle device or an industrial device.
　あるいは、本発明の半導体モジュールは、外部導出リード端子が、封止樹脂の側面の同一の高さ部分から導出されているため、車載機器や産業用機器等の基板に、半導体モジュールの大きさよりも大きな開口を形成し、その開口内に半導体モジュールを配置するとともに、外部導出リード端子を、開口の周縁近傍に形成された電極パターンにはんだ付けすることにより、実装することができる。 Alternatively, in the semiconductor module of the present invention, the lead-out lead terminals are led out from the same height portion of the side surface of the sealing resin, so that the size of the semiconductor module is larger than the size of the semiconductor module on a substrate such as an in-vehicle device or an industrial device. The semiconductor device can be mounted by forming a large opening, placing the semiconductor module in the opening, and soldering the external lead-out lead terminal to an electrode pattern formed near the periphery of the opening.
　また、本発明の半導体モジュールの製造方法によれば、極めて容易に、かつ高い生産性で、全ての外部導出リード端子が封止樹脂の側面の同じ高さ部分から外部に導出された半導体モジュールを製造することができる。 In addition, according to the method for manufacturing a semiconductor module of the present invention, it is very easy and with high productivity, all the external lead-out lead terminals are led out from the same height portion of the side surface of the sealing resin. Can be manufactured.
図１（Ａ）は、第１実施形態にかかる半導体モジュール１００を示す斜視図である。図１（Ｂ）は、半導体モジュール１００を示す断面図であり、図１（Ａ）のＸ-Ｘ部分を示している。FIG. 1A is a perspective view showing the semiconductor module 100 according to the first embodiment. FIG. 1B is a cross-sectional view showing the semiconductor module 100 and shows a portion XX in FIG. 図２は、半導体モジュール１００を示す分解斜視図である。FIG. 2 is an exploded perspective view showing the semiconductor module 100. 図３は、半導体モジュール１００の等価回路図である。FIG. 3 is an equivalent circuit diagram of the semiconductor module 100. 図４は、半導体モジュール１００の製造方法の一例において適用される工程を示す斜視図である。FIG. 4 is a perspective view showing steps applied in an example of a method for manufacturing the semiconductor module 100. 図５は、半導体モジュール１００の製造方法の一例において適用される工程を示す斜視図である。FIG. 5 is a perspective view showing steps applied in an example of a method for manufacturing the semiconductor module 100. 図６は、半導体モジュール１００の製造方法の一例において適用される工程を示す斜視図である。FIG. 6 is a perspective view showing a process applied in an example of a manufacturing method of the semiconductor module 100. 図７は、半導体モジュール１００の製造方法の一例において適用される工程を示す斜視図である。FIG. 7 is a perspective view showing steps applied in an example of a method for manufacturing the semiconductor module 100. 図８は、半導体モジュール１００の製造方法の一例において適用される工程を示す斜視図である。FIG. 8 is a perspective view showing steps applied in an example of a method for manufacturing the semiconductor module 100. 図９は、半導体モジュール１００の製造方法の一例において適用される工程を示す斜視図である。FIG. 9 is a perspective view showing steps applied in an example of a method for manufacturing the semiconductor module 100. 図１０（Ａ）は、半導体モジュール１００の製造方法の一例において適用される工程を示す斜視図である。図１０（Ｂ）は、その平面図である。図１０（Ｃ）は、その正面図である。FIG. 10A is a perspective view showing a process applied in an example of a method for manufacturing the semiconductor module 100. FIG. 10B is a plan view thereof. FIG. 10C is a front view thereof. 図１１は、半導体モジュール１００の製造方法の一例において適用される工程を示す斜視図である。FIG. 11 is a perspective view showing a process applied in an example of a method for manufacturing the semiconductor module 100. 図１２は、半導体モジュール１００の製造方法の一例において適用される工程を示す斜視図である。FIG. 12 is a perspective view showing a process applied in an example of a method for manufacturing the semiconductor module 100. 図１３は、半導体モジュール１００の製造方法の一例において適用される工程を示す斜視図である。FIG. 13 is a perspective view showing steps applied in an example of a method for manufacturing the semiconductor module 100. 図１４は、半導体モジュール１００の製造方法の一例において適用される工程を示す斜視図である。FIG. 14 is a perspective view showing a process applied in an example of a method for manufacturing the semiconductor module 100. 図１５（Ａ）は、第２実施形態にかかる半導体モジュール２００を示す断面図である。図１５（Ｂ）は、半導体モジュール２００の等価回路図である。FIG. 15A is a cross-sectional view showing a semiconductor module 200 according to the second embodiment. FIG. 15B is an equivalent circuit diagram of the semiconductor module 200. 図１６は、第３実施形態にかかる半導体モジュール３００を示す斜視図である。FIG. 16 is a perspective view showing a semiconductor module 300 according to the third embodiment. 図１７は、第４実施形態にかかる半導体モジュール４００を示す斜視図である。FIG. 17 is a perspective view showing a semiconductor module 400 according to the fourth embodiment. 図１８は、特許文献１に開示された従来の半導体モジュール５００を示す斜視図である。FIG. 18 is a perspective view showing a conventional semiconductor module 500 disclosed in Patent Document 1. As shown in FIG.
　以下、図面とともに、本発明を実施するための形態について説明する。 Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.
　［第１実施形態］
　図１（Ａ）、図１（Ｂ）、図２、図３に、本発明の第１実施形態にかかる半導体モジュール１００を示す。 [First Embodiment]
1A, 1B, 2 and 3 show a semiconductor module 100 according to a first embodiment of the present invention.
　ただし、図１（Ａ）は、半導体モジュール１００の斜視図である。図１（Ｂ）は、半導体モジュール１００の断面図であり、図１（Ａ）のＸ-Ｘ部分を示している。なお、図１
（Ｂ）においては、封止樹脂８の図示を省略し、その部分を破線で示している。図２は、半導体モジュール１００の分解斜視図である。なお、図２においても、封止樹脂８の図示を省略している。図３は、半導体モジュール１００の等価回路図である。 However, FIG. 1A is a perspective view of the semiconductor module 100. FIG. 1B is a cross-sectional view of the semiconductor module 100 and shows a portion XX in FIG. In addition, FIG.
In (B), illustration of sealing resin 8 is abbreviate | omitted and the part is shown with the broken line. FIG. 2 is an exploded perspective view of the semiconductor module 100. In FIG. 2, the sealing resin 8 is not shown. FIG. 3 is an equivalent circuit diagram of the semiconductor module 100.
　半導体モジュール１００は、３枚の矩形、板状の絶縁基材６ａ、６ｂ、６ｃを備える。絶縁基材６ａ、６ｂ、６ｃは、たとえば、エポキシ、ポリイミド等の樹脂からなる。 The semiconductor module 100 includes three rectangular and plate-like insulating bases 6a, 6b, and 6c. The insulating bases 6a, 6b, 6c are made of a resin such as epoxy or polyimide, for example.
　絶縁基材６ａの一方の主面（図２において上側の主面）には、矩形、板状の放熱板７ａが形成されている。放熱板７ａは、後述する６個の半導体スイッチング素子１ａ～１ｆが発生させる熱を放散させるためのものである。また、絶縁基材６ａの他方の主面（図２において下側の主面）には、Ｌ字形状で、板状の内部配線リード端子５１ａが形成されている。 A rectangular and plate-like heat radiation plate 7a is formed on one main surface (the upper main surface in FIG. 2) of the insulating base 6a. The heat radiating plate 7a is for radiating heat generated by six semiconductor switching elements 1a to 1f described later. Further, an L-shaped and plate-like internal wiring lead terminal 51a is formed on the other main surface (lower main surface in FIG. 2) of the insulating base 6a.
　絶縁基材６ｂの中央部分には、両主面間を貫通して、矩形の開口６ｂ-ｈが形成されて
いる。また、絶縁基材６ｂの一方の主面には、対向する２つの辺６ｂ-ｘ、６ｂ-ｙの一方の辺６ｂ-ｘに沿って、その辺６ｂ-ｘと直行する方向に、３本の、Ｉ字形状で、板状の内部配線リード端子５２ａ、５２ｂ、５２ｃが形成され、他方の辺６ｂ-ｙに沿って、その辺６ｂ-ｙと直行する方向に、３本の、Ｉ字形状で、板状の内部配線リード端子５２ｄ、５２ｅ、５２ｆが形成されている。内部配線リード端子５２ａ、５２ｂ、５２ｃの幅は、内部配線リード端子５２ｄ、５２ｅ、５２ｆの幅よりも大きい。内部配線リード端子５２ａ、５２ｂ、５２ｃは、それぞれ、開口６ｂ-ｈを跨ぐように形成されており、内部配線リード端子５２ａ、５２ｂ、５２ｃは、開口６ｂ-ｈ部分において、絶縁基材６ｂの他方の主面側に露出している。 A rectangular opening 6b-h is formed in the central portion of the insulating base 6b so as to penetrate between both main surfaces. Further, three main surfaces of one side of the insulating base 6b are provided along one side 6b-x of the two opposite sides 6b-x and 6b-y in a direction perpendicular to the side 6b-x. The I-shaped, plate-like internal wiring lead terminals 52a, 52b, 52c are formed, and three I-shaped elements are formed along the other side 6b-y in a direction perpendicular to the side 6b-y. In shape, plate-like internal wiring lead terminals 52d, 52e, and 52f are formed. The widths of the internal wiring lead terminals 52a, 52b, and 52c are larger than the widths of the internal wiring lead terminals 52d, 52e, and 52f. The internal wiring lead terminals 52a, 52b, and 52c are formed so as to straddle the opening 6b-h, respectively, and the internal wiring lead terminals 52a, 52b, and 52c are the other side of the insulating base 6b in the opening 6b-h portion. It is exposed on the main surface side.
　絶縁基材６ｃの一方の主面には、Ｌ字形状で、板状の内部配線リード端子５３ａが形成されている。内部配線リード端子５３ａは、絶縁基材６ｃの１つの辺６ｃ-ｘから、その辺６ｃ-ｘと直行する方向に導出されている。また、絶縁基材６ｃの一方の主面には、もう１つの辺６ｃ-ｙに沿って、その辺６ｃ-ｙと直行する方向に、３本の、Ｉ字形状で、板状の内部配線リード端子５３ｂ、５３ｃ、５３ｄが形成されている。内部配線リード端子５３ｂ、５３ｃ、５３ｄの幅は、絶縁基材６ｂに形成された内部配線リード端子５２ｄ、５２ｅ、５２ｆの幅と同じ大きさである。また、絶縁基材６ｃの他方の主面には、矩形、板状の放熱板７ｂが形成されている。放熱板７ｂは、放熱板７ａと同様に、後述する６個の半導体スイッチング素子１ａ～１ｆが発生させる熱を放散させるためのものである。放熱板７ａ、７ｂ、内部配線リード端子５１ａ～５３ｄには、たとえば、銅系金属、アルミニウム系金属、鉄系金属等の金属が使用される。 An L-shaped, plate-like internal wiring lead terminal 53a is formed on one main surface of the insulating base 6c. The internal wiring lead terminal 53a is led out from one side 6c-x of the insulating base 6c in a direction perpendicular to the side 6c-x. Further, on one main surface of the insulating base 6c, three I-shaped, plate-like internal wirings are formed along the other side 6c-y in a direction perpendicular to the side 6c-y. Lead terminals 53b, 53c, and 53d are formed. The widths of the internal wiring lead terminals 53b, 53c, 53d are the same as the widths of the internal wiring lead terminals 52d, 52e, 52f formed on the insulating base 6b. Further, a rectangular and plate-shaped heat radiation plate 7b is formed on the other main surface of the insulating base 6c. Like the heat sink 7a, the heat sink 7b is for radiating heat generated by six semiconductor switching elements 1a to 1f described later. For the heat sinks 7a and 7b and the internal wiring lead terminals 51a to 53d, for example, a metal such as a copper-based metal, an aluminum-based metal, or an iron-based metal is used.
　半導体モジュール１００は、６個の半導体スイッチング素子１ａ、１ｂ、１ｃ、１ｄ、１ｅ、１ｆを備える。本実施形態においては、半導体スイッチング素子１ａ～１ｆとして、ＭＯＳＦＥＴを使用した。 The semiconductor module 100 includes six semiconductor switching elements 1a, 1b, 1c, 1d, 1e, and 1f. In the present embodiment, MOSFETs are used as the semiconductor switching elements 1a to 1f.
　半導体スイッチング素子１ａ～１ｆは、それぞれ、一方の主面（図２において上側の主面）に、一方の電源電極パッド（図示せず）と、信号電極パッド（図示しているが符号は付与していない）とが形成され、他方の主面（図２において下側の主面）に、他方の電源電極パッド（図示せず）が形成されている。 Each of the semiconductor switching elements 1a to 1f has one main surface (upper main surface in FIG. 2), one power electrode pad (not shown), and a signal electrode pad (shown with reference numerals). The other power supply electrode pad (not shown) is formed on the other main surface (the lower main surface in FIG. 2).
　半導体スイッチング素子１ａは、はんだ４により、他方の電源電極パッドが、絶縁基材６ｂに形成された内部配線リード端子５２ａに接合されている。 In the semiconductor switching element 1a, the other power electrode pad is joined to the internal wiring lead terminal 52a formed on the insulating base 6b by the solder 4.
　半導体スイッチング素子１ｂは、はんだ４により、他方の電源電極パッドが、絶縁基材６ｂに形成された内部配線リード端子５２ｂに接合されている。 The other switching electrode 1b of the semiconductor switching element 1b is joined to the internal wiring lead terminal 52b formed on the insulating base 6b by the solder 4.
　半導体スイッチング素子１ｃは、はんだ４により、他方の電源電極パッドが、絶縁基材６ｂに形成された内部配線リード端子５２ｃに接合されている。 In the semiconductor switching element 1c, the other power electrode pad is joined to the internal wiring lead terminal 52c formed on the insulating base 6b by the solder 4.
　半導体スイッチング素子１ｄ、１ｅ、１ｆは、それぞれ、はんだ４により、他方の電源電極パッドが、絶縁基材６ｃに形成された内部配線リード端子５３ａに接合されている。また、半導体スイッチング素子１ａの信号電極パッドは、ワイヤー３ａにより、絶縁基材６ｂに形成された内部配線リード端子５２ｄにワイヤーボンディングされて接続されている。 In the semiconductor switching elements 1d, 1e, and 1f, the other power electrode pad is joined to the internal wiring lead terminal 53a formed on the insulating base 6c by the solder 4, respectively. The signal electrode pad of the semiconductor switching element 1a is connected by wire bonding to the internal wiring lead terminal 52d formed on the insulating base 6b by the wire 3a.
　半導体スイッチング素子１ｂの信号電極パッドは、ワイヤー３ｂにより、絶縁基材６ｂに形成された内部配線リード端子５２ｅにワイヤーボンディングされて接続されている。 The signal electrode pad of the semiconductor switching element 1b is connected by wire bonding to the internal wiring lead terminal 52e formed on the insulating base 6b by the wire 3b.
　半導体スイッチング素子１ｃの信号電極パッドは、ワイヤー３ｃにより、絶縁基材６ｂに形成された内部配線リード端子５２ｆにワイヤーボンディングされて接続されている。 The signal electrode pad of the semiconductor switching element 1c is connected by wire bonding to an internal wiring lead terminal 52f formed on the insulating base 6b by a wire 3c.
　半導体スイッチング素子１ｄの信号電極パッドは、ワイヤー３ｄにより、絶縁基材６ｃに形成された内部配線リード端子５３ｂにワイヤーボンディングされて接続されている。 The signal electrode pad of the semiconductor switching element 1d is connected by wire bonding to an internal wiring lead terminal 53b formed on the insulating base 6c by a wire 3d.
　半導体スイッチング素子１ｅの信号電極パッドは、ワイヤー３ｅにより、絶縁基材６ｃに形成された内部配線リード端子５３ｃにワイヤーボンディングされて接続されている。 The signal electrode pad of the semiconductor switching element 1e is connected by wire bonding to the internal wiring lead terminal 53c formed on the insulating base 6c by the wire 3e.
　半導体スイッチング素子１ｆの信号電極パッドは、ワイヤー３ｆにより、絶縁基材６ｃに形成された内部配線リード端子５３ｄにワイヤーボンディングされて接続されている。ワイヤー３ａ～３ｆには、たとえば、アルミニウム、金等の金属が使用される。 The signal electrode pad of the semiconductor switching element 1f is connected by wire bonding to an internal wiring lead terminal 53d formed on the insulating base 6c by a wire 3f. For the wires 3a to 3f, for example, a metal such as aluminum or gold is used.
　また、半導体スイッチング素子１ａの一方の電源電極パッドに、はんだ４により、直方体の金属ブロック２ａが接合されている。 Further, a rectangular parallelepiped metal block 2 a is joined to one power supply electrode pad of the semiconductor switching element 1 a by solder 4.
　半導体スイッチング素子１ｂの一方の電源電極パッドに、はんだ４により、直方体の金属ブロック２ｂが接合されている。 A rectangular parallelepiped metal block 2b is joined to one power supply electrode pad of the semiconductor switching element 1b by solder 4.
　半導体スイッチング素子１ｃの一方の電源電極パッドに、はんだ４により、直方体の金属ブロック２ｃが接合されている。 A rectangular parallelepiped metal block 2c is joined to one power electrode pad of the semiconductor switching element 1c by solder 4.
　半導体スイッチング素子１ｄの一方の電源電極パッドに、はんだ４により、直方体の金属ブロック２ｄが接合されている。 A rectangular parallelepiped metal block 2d is joined by solder 4 to one power supply electrode pad of the semiconductor switching element 1d.
　半導体スイッチング素子１ｅの一方の電源電極パッドに、はんだ４により、直方体の金属ブロック２ｅが接合されている。 A rectangular parallelepiped metal block 2e is joined by solder 4 to one power supply electrode pad of the semiconductor switching element 1e.
　半導体スイッチング素子１ｆの一方の電源電極パッドに、はんだ４により、直方体の金属ブロック２ｆが接合されている。 A rectangular parallelepiped metal block 2 f is joined to one power supply electrode pad of the semiconductor switching element 1 f by solder 4.
　金属ブロック２ａ～２ｆには、たとえば、銅系金属、アルミニウム系金属等の金属が使用される。 For the metal blocks 2a to 2f, for example, metals such as copper metal and aluminum metal are used.
　そして、金属ブロック２ａ、２ｂ、２ｃが、はんだ４により、絶縁基材６ａに形成された内部配線リード端子５１ａに接合されている。 The metal blocks 2a, 2b, and 2c are joined to the internal wiring lead terminal 51a formed on the insulating base 6a by the solder 4.
　金属ブロック２ｄが、はんだ４により、開口６ｂ-ｈ部分において、絶縁基材６ｂに形
成された内部配線リード端子５２ａに接合されている。 The metal block 2d is joined to the internal wiring lead terminal 52a formed on the insulating base 6b by the solder 4 at the opening 6b-h.
　金属ブロック２ｅが、はんだ４により、開口６ｂ-ｈ部分において、絶縁基材６ｂに形
成された内部配線リード端子５２ｂに接合されている。 The metal block 2e is joined to the internal wiring lead terminal 52b formed on the insulating base 6b by the solder 4 at the opening 6b-h.
　金属ブロック２ｆが、はんだ４により、開口６ｂ-ｈ部分において、絶縁基材６ｂに形
成された内部配線リード端子５２ｃに接合されている。 The metal block 2f is joined to the internal wiring lead terminal 52c formed on the insulating base 6b by the solder 4 at the opening 6b-h.
　以上の結果により、３枚の絶縁基材６ａ、６ｂ、６ｃは、半導体スイッチング素子１ａ～１ｆおよび金属ブロック２ａ～２ｆを介して、上下方向に間隔を開けて、３層に重ねて配置されている。 As a result of the above, the three insulating bases 6a, 6b, and 6c are arranged in three layers with a space in the vertical direction through the semiconductor switching elements 1a to 1f and the metal blocks 2a to 2f. Yes.
　半導体モジュール１００は、外部導出リード端子１５１ａ、１５２ａ、１５２ｂ、１５２ｃ、１５２ｄ、１５２ｅ、１５２ｆ、１５３ａ、１５３ｂ、１５３ｃ、１５３ｄを備える。 The semiconductor module 100 includes external lead terminals 151a, 152a, 152b, 152c, 152d, 152e, 152f, 153a, 153b, 153c, and 153d.
　外部導出リード端子１５１ａ～１５３ｄは、Ｉ字形状で、板状からなる。 External lead terminals 151a to 153d are I-shaped and have a plate shape.
　外部導出リード端子１５１ａ、１５２ａ、１５２ｂ、１５２ｃ、１５３ａの幅は、外部導出リード端子１５２ｄ、１５２ｅ、１５２ｆ、１５３ｂ、１５３ｃ、１５３ｄの幅よりも大きい。 The widths of the external lead terminals 151a, 152a, 152b, 152c, and 153a are larger than the widths of the external lead terminals 152d, 152e, 152f, 153b, 153c, and 153d.
　外部導出リード端子１５１ａ、１５３ａ、１５３ｂ、１５３ｃ、１５３ｄは、それぞれ、２ヶ所において屈曲されている。 External lead terminals 151a, 153a, 153b, 153c, and 153d are bent at two locations, respectively.
　外部導出リード端子１５１ａ～１５３ｄには、内部配線リード端子５１ａ～５３ｄと同様に、たとえば、銅系金属、アルミニウム系金属、鉄系金属等の金属が使用される。
外部導出リード端子１５１ａ～１５３ｄは、それぞれ、はんだ（図示せず）により、内部配線リード端子５１ａ～５３ｄに接合されている。 As the internal lead terminals 51a to 53d, for example, metals such as copper-based metal, aluminum-based metal, and iron-based metal are used for the external lead-out lead terminals 151a to 153d.
The external lead terminals 151a to 153d are joined to the internal wiring lead terminals 51a to 53d by solder (not shown), respectively.
　なお、図１（Ｂ）および図２から分かるように、本実施形態においては、すべての接合部分において、外部導出リード端子１５１ａ～１５３ｄが、内部配線リード端子５１ａ～５３ｄの上側に接合されている。完成した半導体モジュール１００は、オン・オフの繰り返しの度に、内部の封止樹脂８とリード端子間で熱膨張係数差による応力が発生する。本実施形態においては、外部導出リード端子１５１ａ～１５３ｄが内部配線リード端子５１ａ～５３ｄの上側に接合されているため、外部導出リード端子１５１ａ～１５３ｄにかかる応力は、オン／オフの繰り返しの度に同方向にかかる。そのため、外部導出リード端子１５１ａ～１５３ｄ自身のひずみは少ない。 As can be seen from FIG. 1B and FIG. 2, in this embodiment, the external lead terminals 151a to 153d are joined to the upper side of the internal wiring lead terminals 51a to 53d in all joint portions. . In the completed semiconductor module 100, a stress due to a difference in thermal expansion coefficient is generated between the internal sealing resin 8 and the lead terminal each time the ON / OFF is repeated. In the present embodiment, since the external lead terminals 151a to 153d are joined to the upper side of the internal wiring lead terminals 51a to 53d, the stress applied to the external lead terminals 151a to 153d is applied each time ON / OFF is repeated. Take the same direction. For this reason, the distortion of the external lead terminals 151a to 153d themselves is small.
　一方で、もし、たとえば、外部導出リード端子１５３ａのみを内部配線リード端子５３ａの下部に接続させた場合、オン／オフにより、外部導出リード端子１５３ａには、他の外部導出リード端子１５１ａ～１５２ｆ、１５３ｂ～１５３ｄと異なる方向の応力がかかってしまう。結果として外部導出リード端子１５３ａ内部に印加される応力は大きくなり、端子の寿命が短くなってしまう。 On the other hand, if, for example, only the external lead terminal 153a is connected to the lower part of the internal wiring lead terminal 53a, the external lead terminal 153a is connected to the other external lead terminals 151a to 152f by turning on / off. Stress in a direction different from 153b to 153d is applied. As a result, the stress applied to the inside of the external lead-out lead terminal 153a increases, and the life of the terminal is shortened.
　本実施形態においては、全ての外部導出リード端子１５１ａ～１５３ｄが内部配線リード端子５１ａ～５３ｄの上側に配置されているため、応力の低減が可能となり、端子の寿命をより長くすることが可能になっている。 In the present embodiment, since all the external lead terminals 151a to 153d are arranged above the internal wiring lead terminals 51a to 53d, stress can be reduced and the life of the terminals can be extended. It has become.
　また、図１（Ｂ）および図２に示すように、本実施形態において、すべての接合部分において、外部導出リード端子１５１ａ～１５３ｄが、内部配線リード端子５１ａ～５３ｄの上側に接合されていることは、以下の理由により、接続信頼性を向上させるためにも重要である。外部導出リード１５１ａ～１５３ｄ、および内部配線リード５１ａ～５３ｄの先端部、すなわち互いが接合される部分の高さ位置精度は、必ずしも完全に一定ではなく、ばらつきを持っている場合がある。そのため、接合後の接合部厚みがばらつき、接合部信頼性が著しく劣化したり、極端な場合は接合していない箇所が生じたりする場合がある。そこで、接合時には、内部配線リードを固定した状態で、外部導出リード全体に荷重（力）を掛けて、全ての接合部が一定厚みになるようにする。この方法は、内部配線リード端子に対して、外部導出リードが同じ側に位置する場合にのみ為し得るものである。 Further, as shown in FIGS. 1B and 2, in this embodiment, the external lead-out lead terminals 151a to 153d are joined to the upper side of the internal wiring lead terminals 51a to 53d in all joint portions. Is also important for improving connection reliability for the following reasons. The height position accuracy of the leading end portions of the external lead leads 151a to 153d and the internal wiring leads 51a to 53d, that is, the portions where the lead wires are joined to each other is not necessarily completely constant and may vary. For this reason, the thickness of the joint after joining may vary, and the reliability of the joint may be significantly deteriorated. In an extreme case, a part that is not joined may occur. Therefore, at the time of joining, a load (force) is applied to the entire external lead-out lead with the internal wiring leads fixed, so that all the joining portions have a constant thickness. This method can be performed only when the external lead-out lead is located on the same side with respect to the internal wiring lead terminal.
　なお、本実施形態においては、全ての接合部において、外部導出リード端子１５１ａ～１５３ｄが、内部配線リード端子５１ａ～５３ｄの上側に接合されているが、上記記述により、全ての接合部において、外部導出リード端子１５１ａ～１５３ｄが、内部配線リード端子５１ａ～５３ｄの下側に接合されても良いことは言うまでもない。 In this embodiment, the external lead-out lead terminals 151a to 153d are joined to the upper side of the internal wiring lead terminals 51a to 53d in all the joints. However, according to the above description, the external lead terminals 151a to 153d It goes without saying that the lead-out lead terminals 151a to 153d may be joined to the lower side of the internal wiring lead terminals 51a to 53d.
　半導体モジュール１００においては、以上のように一体化された半導体スイッチング素子１ａ～１ｆ、金属ブロック２ａ～２ｆ、ワイヤー３ａ～３ｆ、内部配線リード端子５１ａ～５３ｄ、外部導出リード端子１５１ａ～１５３ｄ、絶縁基材６ａ～６ｃ、放熱板７ａ、７ｂが、封止樹脂８に封止されている。封止樹脂８には、たとえば、エポキシ、ポリイミド等が使用される。 In the semiconductor module 100, the semiconductor switching elements 1a to 1f, the metal blocks 2a to 2f, the wires 3a to 3f, the internal wiring lead terminals 51a to 53d, the external lead-out lead terminals 151a to 153d, the insulating group, which are integrated as described above. The materials 6 a to 6 c and the heat radiating plates 7 a and 7 b are sealed with the sealing resin 8. For the sealing resin 8, for example, epoxy, polyimide or the like is used.
　封止樹脂８の両主面には、放熱板７ａ、７ｂが露出されている。 The heat sinks 7 a and 7 b are exposed on both main surfaces of the sealing resin 8.
　また、封止樹脂８の側面から、１１本の外部導出リード端子１５１ａ～１５３ｄが導出されている。全ての外部導出リード端子１５１ａ～１５３ｄは、外部導出リード端子１５１ａ、１５３ａ、１５３ｂ、１５３ｃ、１５３ｄが、それぞれ、２ヶ所において屈曲されていることにより、封止樹脂８の側面の同じ高さ部分から導出されている。 In addition, eleven external lead terminals 151 a to 153 d are led out from the side surface of the sealing resin 8. All the external lead terminals 151a to 153d are bent from the same height portion on the side surface of the sealing resin 8 by bending the external lead terminals 151a, 153a, 153b, 153c, and 153d at two locations, respectively. Has been derived.
　なお、全ての外部導出リード端子１５１ａ～１５３ｄが封止樹脂８の側面の同じ高さ部分から外部に導出されるとは、製造ばらつき等により僅かな寸法分ずれて外部に導出される場合をも含む概念であり、実質的に同じ高さから外部に導出されている、略同じ高さから外部に導出されている、という意味である。 Note that all the external lead terminals 151a to 153d are led out to the outside from the same height portion of the side surface of the sealing resin 8 because they may be led to the outside by a slight dimensional deviation due to manufacturing variations or the like. It is a concept that includes, and is derived from substantially the same height to the outside, and is derived from substantially the same height to the outside.
　また、外部導出リード端子１５１ａ～１５３ｄは、それぞれの主面が水平となるように封止樹脂８から導出されている。すなわち、外部導出リード端子１５１ａ～１５３ｄの主面は、封止樹脂８の主面と平行になっている。 Further, the external lead-out lead terminals 151a to 153d are led out from the sealing resin 8 so that their main surfaces are horizontal. That is, the main surfaces of the external lead terminals 151 a to 153 d are parallel to the main surface of the sealing resin 8.
　このように、外部導出リード端子１５１ａ～１５３ｄを封止樹脂８から水平に導出しておけば、外部導出リード端子１５１ａ～１５３ｄを、たとえば図１（Ａ）における下側方向に屈曲させることが容易になる。以上の構造からなる、第１実施形態にかかる半導体モジュール１００の等価回路を図３に示す。 As described above, if the external lead terminals 151a to 153d are horizontally led out from the sealing resin 8, the external lead terminals 151a to 153d can be easily bent downward, for example, in FIG. 1A. become. FIG. 3 shows an equivalent circuit of the semiconductor module 100 having the above structure according to the first embodiment.
　半導体モジュール１００はインバータであり、外部導出リード端子１５３ａがＰ側端子に該当し、外部導出リード端子１５１ａがＮ側端子に該当する。また、外部導出リード端子１５２ａ、１５２ｂ、１５２ｃが、それぞれ、中間端子に該当する。また、外部導出リード端子１５２ｄ、１５２ｅ、１５２ｆ、１５３ｂ、１５３ｃ、１５３ｄが、それぞれ、ゲート端子に該当する。 The semiconductor module 100 is an inverter, and the external lead terminal 153a corresponds to the P-side terminal, and the external lead terminal 151a corresponds to the N-side terminal. The external lead terminals 152a, 152b, and 152c correspond to intermediate terminals, respectively. The external lead terminals 152d, 152e, 152f, 153b, 153c, and 153d correspond to gate terminals, respectively.
　第１実施形態にかかる半導体モジュール１００は、たとえば、図４～１４に示す方法で製造することができる。なお、図４～９および図１１～１４は斜視図である。図１０（Ａ）は斜視図であり、図１０（Ｂ）は平面図であり、図１０（Ｃ）正面図である。 The semiconductor module 100 according to the first embodiment can be manufactured, for example, by the method shown in FIGS. 4 to 9 and FIGS. 11 to 14 are perspective views. 10A is a perspective view, FIG. 10B is a plan view, and FIG. 10C is a front view.
　まず、図４に示すように、絶縁基材６ａ～６ｃと、放熱板７ａ、７ｂと、内部配線リード端子５１ａ～５３ｄとを準備する。続いて、放熱板７ａ、７ｂと内部配線リード端子５１ａ～５３ｄとを、絶縁基材６ａ～６ｃに固定する。固定は、たとえば、接着剤によりおこなう。固定後の状態を、図５に示す。 First, as shown in FIG. 4, insulating bases 6a to 6c, heat sinks 7a and 7b, and internal wiring lead terminals 51a to 53d are prepared. Subsequently, the heat radiating plates 7a and 7b and the internal wiring lead terminals 51a to 53d are fixed to the insulating bases 6a to 6c. Fixing is performed by, for example, an adhesive. The state after fixing is shown in FIG.
　次に、半導体スイッチング素子１ａ～１ｆを準備する。続いて、図６に示すように、半導体スイッチング素子１ａ～１ｆの他方の電源電極パッド（図６において各半導体スイッチング素子１ａ～１ｆの下側の主面に形成されている）を、はんだ（図示せず）により、内部配線リード端子５２ａ～５２ｃおよび５３ａに接合する。より詳細には、半導体スイッチング素子１ａの他方の電源電極パッドを内部配線リード端子５２ａに、半導体スイッチング素子１ｂの他方の電源電極パッドを内部配線リード端子５２ｂに、半導体スイッチング素子１ｃの他方の電源電極パッドを内部配線リード端子５２ｃに、それぞれ接合する。また、半導体スイッチング素子１ｄ～１ｆの他方の電源電極パッドを、内部配線リード端子５３ａに、それぞれ接合する。 Next, the semiconductor switching elements 1a to 1f are prepared. Subsequently, as shown in FIG. 6, the other power supply electrode pads of semiconductor switching elements 1a to 1f (formed on the lower main surface of each semiconductor switching element 1a to 1f in FIG. 6) are soldered (see FIG. 6). To the internal wiring lead terminals 52a to 52c and 53a. More specifically, the other power supply electrode pad of the semiconductor switching element 1a is connected to the internal wiring lead terminal 52a, the other power supply electrode pad of the semiconductor switching element 1b is connected to the internal wiring lead terminal 52b, and the other power supply electrode of the semiconductor switching element 1c. The pads are bonded to the internal wiring lead terminals 52c, respectively. Further, the other power supply electrode pads of the semiconductor switching elements 1d to 1f are respectively joined to the internal wiring lead terminals 53a.
　次に、金属ブロック２ａ～２ｆを準備する。続いて、図７に示すように、半導体スイッチング素子１ａ～１ｆの一方の電源電極パッド（図７において各半導体スイッチング素子１ａ～１ｆの上側の主面に形成されている）に、はんだ（図示せず）により、金属ブロック２ａ～２ｆを接合する。より詳細には、半導体スイッチング素子１ａの一方の電源電極パッドに金属ブロック２ａを、半導体スイッチング素子１ｂの一方の電源電極パッドに金属ブロック２ｂを、半導体スイッチング素子１ｃの一方の電源電極パッドに金属ブロック２ｃを、半導体スイッチング素子１ｄの一方の電源電極パッドに金属ブロック２ｄを、半導体スイッチング素子１ｅの一方の電源電極パッドに金属ブロック２ｅを、半導体スイッチング素子１ｆの一方の電源電極パッドに金属ブロック２ｆを、それぞれ接合する。 Next, the metal blocks 2a to 2f are prepared. Subsequently, as shown in FIG. 7, one power supply electrode pad of the semiconductor switching elements 1a to 1f (formed on the main surface on the upper side of each semiconductor switching element 1a to 1f in FIG. 7) is soldered (not shown). The metal blocks 2a to 2f are joined together. More specifically, the metal block 2a is provided on one power electrode pad of the semiconductor switching element 1a, the metal block 2b is provided on one power electrode pad of the semiconductor switching element 1b, and the metal block is provided on one power electrode pad of the semiconductor switching element 1c. 2c, a metal block 2d on one power electrode pad of the semiconductor switching element 1d, a metal block 2e on one power electrode pad of the semiconductor switching element 1e, and a metal block 2f on one power electrode pad of the semiconductor switching element 1f. , Respectively.
　次に、図８に示すように、半導体スイッチング素子１ａ～１ｆの信号電極パッド（図示しているが符号は付与していない）と、内部配線リード端子５２ｄ～５２ｆおよび５３ｂ～５３ｄとを、ワイヤー３ａ～３ｆにより、ワイヤーボンディングして接続する。より詳細には、半導体スイッチング素子１ａの信号電極パッドと内部配線リード端子５２ｄとをワイヤー３ａにより、半導体スイッチング素子１ｂの信号電極パッドと内部配線リード端子５２ｅとをワイヤー３ｂにより、半導体スイッチング素子１ｃの信号電極パッドと内部配線リード端子５２ｆとをワイヤー３ｃにより、半導体スイッチング素子１ｄの信号電極パッドと内部配線リード端子５３ｂとをワイヤー３ｄにより、半導体スイッチング素子１ｅの信号電極パッドと内部配線リード端子５３ｃとをワイヤー３ｅにより、半導体スイッチング素子１ｆの信号電極パッドと内部配線リード端子５３ｄとをワイヤー３ｆにより、それぞれ、ワイヤーボンディングして接続する。 Next, as shown in FIG. 8, the signal electrode pads of semiconductor switching elements 1a to 1f (not shown but not provided with reference numerals) and internal wiring lead terminals 52d to 52f and 53b to 53d are connected to wires. Connect by wire bonding using 3a to 3f. More specifically, the signal electrode pad of the semiconductor switching element 1a and the internal wiring lead terminal 52d are connected by the wire 3a, the signal electrode pad of the semiconductor switching element 1b and the internal wiring lead terminal 52e are connected by the wire 3b, and the semiconductor switching element 1c. The signal electrode pad and the internal wiring lead terminal 52f are connected by a wire 3c, the signal electrode pad of the semiconductor switching element 1d and the internal wiring lead terminal 53b are connected by a wire 3d, and the signal electrode pad and the internal wiring lead terminal 53c of the semiconductor switching element 1e are connected. The wire 3e is used to connect the signal electrode pad of the semiconductor switching element 1f and the internal wiring lead terminal 53d by wire bonding using the wire 3f.
　次に、図９に示すように、金属ブロック２ａ～２ｆと、内部配線リード端子５１ａおよび５２ａ～５２ｃとを、はんだ（図示せず）により接合する。より詳細には、金属ブロック２ａ～２ｃと内部配線リード端子５１ａとを、それぞれ接合する。また、金属ブロック２ｄと内部配線リード端子５２ａとを、金属ブロック２ｅと内部配線リード端子５２ｂとを、金属ブロック２ｆと内部配線リード端子５２ｃとを、それぞれ、絶縁基材６ｂに形成した開口６ｂ-ｈ部分において接合する。この結果、内部配線リード端子５１ａ～５３ｄ
が固定された絶縁基材６ａ～６ｃと、半導体スイッチング素子１ａ～１ｆと、金属ブロック２ａ～２ｆと、ワイヤー３ａ～３ｆとが一体化される。 Next, as shown in FIG. 9, the metal blocks 2a to 2f and the internal wiring lead terminals 51a and 52a to 52c are joined by solder (not shown). More specifically, the metal blocks 2a to 2c and the internal wiring lead terminal 51a are joined to each other. In addition, the metal block 2d and the internal wiring lead terminal 52a, the metal block 2e and the internal wiring lead terminal 52b, the metal block 2f and the internal wiring lead terminal 52c, respectively, are formed in the insulating base 6b. It joins in h part. As a result, the internal wiring lead terminals 51a to 53d
Insulating base materials 6a to 6c to which are fixed, semiconductor switching elements 1a to 1f, metal blocks 2a to 2f, and wires 3a to 3f are integrated.
　次に、図１０（Ａ）～（Ｃ）に示すように、外部導出リード端子１５１ａ～１５３ｄを作製する。具体的には、１枚の金属板を準備し、その金属板を金型によって打ち抜いて、所定の形状からなる外部導出リード端子１５１ａ～１５３ｄを作製する。打ち抜き後に、外部導出リード端子１５１ａ～１５３ｄは、１つの環状のリードフレーム１５０に繋がっている。また、外部導出リード端子１５１ａ、１５２ａ～１５２ｃ、１５３ａは、タイバー１５５ａによって、それぞれの中間部分において繋がっている。また、外部導出リード端子１５２ｄ～１５２ｆ、１５３ｂ～１５３ｄは、タイバー１５５ｂによって、それぞれの中間部分において繋がっている。さらに、外部導出リード端子１５１ａ、１５３ａ～１５３ｄを、それぞれ２ヶ所で屈曲させる。外部導出リード端子１５１ａは、図１０（Ａ）における上側に屈曲させる。外部導出リード端子１５３ａ～１５３ｄは、図１０（Ａ）における下側に屈曲させる。 Next, as shown in FIGS. 10A to 10C, external lead terminals 151a to 153d are manufactured. Specifically, a single metal plate is prepared, and the metal plate is punched out with a mold to produce external lead terminals 151a to 153d having a predetermined shape. After punching, the external lead terminals 151 a to 153 d are connected to one annular lead frame 150. Further, the external lead terminals 151a, 152a to 152c, 153a are connected to each other at intermediate portions by tie bars 155a. Further, the external lead terminals 152d to 152f and 153b to 153d are connected to each other at intermediate portions by tie bars 155b. Further, the external lead terminals 151a and 153a to 153d are bent at two points, respectively. The external lead terminal 151a is bent upward in FIG. The external lead terminals 153a to 153d are bent downward in FIG.
　次に、図１１に示すように、リードフレーム１５０に繋がった外部導出リード端子１５１ａ～１５３ｄを、一体化された絶縁基材６ａ～６ｃの上側に配置する。なお、逆に、一体化された絶縁基材６ａ～６ｃを、リードフレーム１５０に繋がった外部導出リード端子１５１ａ～１５３ｄの上側に配置しても良い。 Next, as shown in FIG. 11, the external lead-out lead terminals 151a to 153d connected to the lead frame 150 are arranged above the integrated insulating bases 6a to 6c. Conversely, the integrated insulating bases 6 a to 6 c may be disposed above the external lead terminals 151 a to 153 d connected to the lead frame 150.
　次に、図１２に示すように、外部導出リード端子１５１ａ～１５３ｄを、はんだ（図示せず）により、内部配線リード端子５１ａ～５３ｄに接合する。このとき、外部導出リード端子１５１ａ～１５３ｄが一体化されたリードフレーム１５０と、内部配線リード端子５１ａ～５３ｄが固定された絶縁基材６ａ～６ｃとを、これらに対して垂直方向から見た場合、外部導出リード端子１５１ａ～１５３ｄの一端と内部配線端子５１ａ～５３ｄとの接合される部分のみが重なっているため、外部導出リード端子１５１ａ～１５３ｄと内部配線リード端子５１ａ～５３ｄとの接合は、極めて容易に行うことができる。 Next, as shown in FIG. 12, the external lead terminals 151a to 153d are joined to the internal wiring lead terminals 51a to 53d by solder (not shown). At this time, when the lead frame 150 in which the external lead terminals 151a to 153d are integrated and the insulating base materials 6a to 6c to which the internal wiring lead terminals 51a to 53d are fixed are viewed from the direction perpendicular thereto. Since only one portion of the external lead terminals 151a to 153d and the internal wiring terminals 51a to 53d are overlapped, the connection between the external lead terminals 151a to 153d and the internal wiring lead terminals 51a to 53d is as follows. It can be done very easily.
　なお、接合前、または接合を行うときには、内部配線リード５１ａ～５３ｄを固定した状態で、外部導出リード１５１ａ～１５３ｄ全体に荷重（力）を掛けて、全ての接合部が一定厚みになるようにすることが好ましい。外部導出リード１５１ａ～１５３ｄ、および内部配線リード５１ａ～５３ｄの先端部、すなわち互いが接合される部分の高さ位置精度は、必ずしも完全に一定ではなく、ばらつきを持っている場合がある。そのため、接合後の接合部厚みがばらつき、接合部信頼性が著しく劣化したり、極端な場合は接合していない箇所が生じたりする場合がある。そこで、接合前、または接合時に、上記作業を行うことにより、接続信頼性を向上させることができる。 Before joining or when joining, with the internal wiring leads 51a to 53d fixed, a load (force) is applied to the entire external lead leads 151a to 153d so that all joining parts have a constant thickness. It is preferable to do. The height position accuracy of the leading end portions of the external lead leads 151a to 153d and the internal wiring leads 51a to 53d, that is, the portions where the lead wires are joined to each other is not necessarily completely constant and may vary. For this reason, the thickness of the joint after joining may vary, and the reliability of the joint may be significantly deteriorated. In an extreme case, a part that is not joined may occur. Therefore, the connection reliability can be improved by performing the above operation before or during bonding.
　次に、半導体スイッチング素子１ａ～１ｆと、金属ブロック２ａ～２ｆと、ワイヤー３ａ～３ｆと、内部配線リード端子５１ａ～５３ｄと、放熱板７ａ、７ｂと、外部導出リード端子１５１ａ～１５３ｄとが一体化された絶縁基材６ａ～６ｃを、外部導出リード端子１５１ａ～１５３ｄの他端を外部に導出させて、金型（図示せず）内に収容する。続いて、図１３に示すように、金型内に樹脂をトランスファーモールドして、封止樹脂８を形成し、封止樹脂８内に、半導体スイッチング素子１ａ～１ｆと、金属ブロック２ａ～２ｆと、ワイヤー３ａ～３ｆと、内部配線リード端子５１ａ～５３ｄと、放熱板７ａ、７ｂと、外部導出リード端子１５１ａ～１５３ｄとを封止する。この結果、封止樹脂８の両主面から放熱板７ａ、７ｂが露出される。また、封止樹脂８の側面から、１１本の外部導出リード端子１５１ａ～１５３ｄが導出される。 Next, the semiconductor switching elements 1a to 1f, metal blocks 2a to 2f, wires 3a to 3f, internal wiring lead terminals 51a to 53d, heat sinks 7a and 7b, and external lead-out lead terminals 151a to 153d are integrated. The formed insulating bases 6a to 6c are accommodated in a mold (not shown) with the other ends of the external lead terminals 151a to 153d led out to the outside. Subsequently, as shown in FIG. 13, a resin is transfer-molded in the mold to form the sealing resin 8, and the semiconductor switching elements 1a to 1f and the metal blocks 2a to 2f are formed in the sealing resin 8. The wires 3a to 3f, the internal wiring lead terminals 51a to 53d, the heat sinks 7a and 7b, and the external lead-out lead terminals 151a to 153d are sealed. As a result, the heat sinks 7 a and 7 b are exposed from both main surfaces of the sealing resin 8. Eleven external lead terminals 151 a to 153 d are led out from the side surface of the sealing resin 8.
　なお、半導体モジュール１００においては、外部導出リード端子１５１ａ～１５３ｄが封止樹脂８の側面の同じ高さ部分から外部に導出された構造であるため、封止樹脂８のモールド（樹脂封止）を非常に容易に行うことができる。また、モールドに使用する金型の設計が容易で、コストも低く抑えることができる。 Since the semiconductor module 100 has a structure in which the external lead terminals 151a to 153d are led out from the same height portion on the side surface of the sealing resin 8, a mold (resin sealing) of the sealing resin 8 is performed. It can be done very easily. In addition, the mold used for the mold can be easily designed, and the cost can be kept low.
　最後に、図１４に示すように、外部導出リード端子１５１ａ～１５３ｄから、不要なリードフレーム１５０とタイバー１５５ａ、１５５ｂを切り離し、第１実施形態にかかる半導体モジュール１００を完成させる。半導体モジュール１００においては、全ての外部導出リード端子１５１ａ～１５３ｄが、封止樹脂８の側面の同じ高さ部分から外部に導出されている。 Finally, as shown in FIG. 14, the unnecessary lead frame 150 and tie bars 155a and 155b are separated from the external lead terminals 151a to 153d, and the semiconductor module 100 according to the first embodiment is completed. In the semiconductor module 100, all the external lead terminals 151 a to 153 d are led out from the same height portion of the side surface of the sealing resin 8.
　［第２実施形態］
　第２実施形態にかかる半導体モジュール２００を、図１５（Ａ）、（Ｂ）に示す。ただし、図１５（Ａ）は、半導体モジュール２００の断面図である。図１５（Ｂ）は、半導体モジュール２００の等価回路図である。 [Second Embodiment]
A semiconductor module 200 according to the second embodiment is shown in FIGS. However, FIG. 15A is a cross-sectional view of the semiconductor module 200. FIG. 15B is an equivalent circuit diagram of the semiconductor module 200.
　第２実施形態にかかる半導体モジュール２００は、図１～３に示した第１実施形態にかかる半導体モジュール１００に、３個のシャント抵抗素子１０を追加した。
具体的には、半導体モジュール２００は、図１５（Ａ）に示すように、シャント抵抗素子１０が追加されている。 In the semiconductor module 200 according to the second embodiment, three shunt resistor elements 10 are added to the semiconductor module 100 according to the first embodiment shown in FIGS.
Specifically, as shown in FIG. 15A, the semiconductor module 200 has a shunt resistor element 10 added thereto.
　半導体モジュール２００は、シャント抵抗素子１０を追加するために、第１実施形態にかかる半導体モジュール１００において絶縁基材６に固定されていた１本の内部配線リード端子５２ｃを、２本の内部配線リード端子５２ｇ、５２ｈに置き換えている。
そして、底面に１対の電極パッドが形成されたシャント抵抗素子１０を用意し、はんだ４により、一方の電極パッドが内部配線リード端子５２ｇに、他方の電極パッドが内部配線リード端子５２ｈに接合している。 In order to add the shunt resistance element 10, the semiconductor module 200 replaces one internal wiring lead terminal 52c fixed to the insulating base 6 in the semiconductor module 100 according to the first embodiment with two internal wiring leads. Terminals 52g and 52h are replaced.
Then, a shunt resistor element 10 having a pair of electrode pads formed on the bottom surface is prepared, and one electrode pad is joined to the internal wiring lead terminal 52g and the other electrode pad is joined to the internal wiring lead terminal 52h by the solder 4. ing.
　なお、半導体スイッチング素子１ｃの他方の電源電極パッド（図示せず）は、第１実施形態にかかる半導体モジュール１００において接合されていた内部配線リード端子５２ｃに代えて、内部配線リード端子５２ｇに接合されている。 The other power supply electrode pad (not shown) of the semiconductor switching element 1c is joined to the internal wiring lead terminal 52g instead of the internal wiring lead terminal 52c joined in the semiconductor module 100 according to the first embodiment. ing.
　あと２個のシャント抵抗素子１０も、同様の方法により、半導体モジュール２００に追加されている。 The remaining two shunt resistor elements 10 are also added to the semiconductor module 200 by the same method.
　半導体モジュール２００は、図１５（Ｂ）に示す等価回路を備えている。すなわち、半導体スイッチング素子１ａと１ｄの接続点と、中間端子である外部接続リード端子１５２ａとの間に、シャント抵抗素子１０が挿入されている。また、半導体スイッチング素子１ｂと１ｅの接続点と、中間端子である外部接続リード端子１５２ｂとの間に、シャント抵抗素子１０が挿入されている。また、半導体スイッチング素子１ｃと１ｆの接続点と、中間端子である外部接続リード端子１５２ｃとの間に、シャント抵抗素子１０が挿入されている。 The semiconductor module 200 includes an equivalent circuit shown in FIG. That is, the shunt resistance element 10 is inserted between the connection point of the semiconductor switching elements 1a and 1d and the external connection lead terminal 152a that is an intermediate terminal. Further, the shunt resistor element 10 is inserted between the connection point of the semiconductor switching elements 1b and 1e and the external connection lead terminal 152b which is an intermediate terminal. Further, the shunt resistor element 10 is inserted between the connection point of the semiconductor switching elements 1c and 1f and the external connection lead terminal 152c which is an intermediate terminal.
　半導体モジュール２００は、各シャント抵抗素子１０の両電源極パッド間の電圧を監視することにより、異常電流の発生を検出することができる。 The semiconductor module 200 can detect the occurrence of an abnormal current by monitoring the voltage between both power supply electrode pads of each shunt resistance element 10.
　［第３実施形態］
　第３実施形態にかかる半導体モジュール３００を、図１６に示す。ただし、図１６は、半導体モジュール３００の斜視図である。 [Third Embodiment]
A semiconductor module 300 according to the third embodiment is shown in FIG. However, FIG. 16 is a perspective view of the semiconductor module 300.
　第３実施形態にかかる半導体モジュール３００は、図１～３に示した第１実施形態にかかる半導体モジュール１００の外部導出リード端子１５１ａ～１５３ｄの長さを長くしたうえで、同一方向（図１６における下側方向）に屈曲させた。半導体モジュール３００の他の構成は、半導体モジュール１００の構成と同じにした。 In the semiconductor module 300 according to the third embodiment, the lengths of the external lead terminals 151a to 153d of the semiconductor module 100 according to the first embodiment shown in FIGS. Bent downward). The other configuration of the semiconductor module 300 is the same as that of the semiconductor module 100.
　半導体モジュール３００は、外部導出リード端子１５１ａ～１５３ｄが封止樹脂８の側面の同じ高さ部分から導出されているため、一括して、容易に同一方向に屈曲させることができる。 In the semiconductor module 300, since the external lead terminals 151a to 153d are led out from the same height portion on the side surface of the sealing resin 8, they can be bent together in the same direction easily.
　半導体モジュール３００は、外部導出リード端子１５１ａ～１５３ｄが同一方向に屈曲されているため、屈曲された外部導出リード端子１５１ａ～１５３ｄを、車載機器や産業用機器等の基板（図示せず）に形成された貫通孔に挿入したうえで、はんだ付けすることにより実装することができる。 In the semiconductor module 300, since the external lead terminals 151a to 153d are bent in the same direction, the bent external lead terminals 151a to 153d are formed on a substrate (not shown) such as an in-vehicle device or an industrial device. It can be mounted by inserting into the through-hole and soldering.
　［第４実施形態］
　第４実施形態にかかる半導体モジュール４００を、図１７に示す。ただし、図１７は、半導体モジュール４００の斜視図である。 [Fourth Embodiment]
A semiconductor module 400 according to the fourth embodiment is shown in FIG. However, FIG. 17 is a perspective view of the semiconductor module 400.
　第４実施形態にかかる半導体モジュール４００は、図１～３に示した第１実施形態にかかる半導体モジュール１００の外部導出リード端子１５２ｄ、１５３ｂ、１５２ｅ、１５３ｃ、１５２ｆ、１５３ｄを、別の外部導出リード端子２５２ｄ、２５３ｂ、２５２ｅ、２５３ｃ、２５２ｆ、２５３ｄに置き換えた。半導体モジュール４００の他の構成は、半導体モジュール１００の構成と同じにした。 In the semiconductor module 400 according to the fourth embodiment, the external lead terminals 152d, 153b, 152e, 153c, 152f, and 153d of the semiconductor module 100 according to the first embodiment shown in FIGS. The terminals 252d, 253b, 252e, 253c, 252f, and 253d were replaced. The other configuration of the semiconductor module 400 is the same as that of the semiconductor module 100.
　半導体モジュール１００では、外部導出リード端子１５２ｄ、１５３ｂ、１５２ｅ、１５３ｃ、１５２ｆ、１５３ｄの各間隔（ピッチ）が一定であった。これに対し、半導体モジュール１００では、外部導出リード端子２５２ｄ、２５３ｂ、２５２ｅ、２５３ｃ、２５２ｆ、２５３ｄの各間隔が、封止樹脂８から、外部導出リード端子２５２ｄ～２５３ｄの各他端の先端方向に向かって、平面方向に広がっている。 In the semiconductor module 100, the intervals (pitch) of the external lead terminals 152d, 153b, 152e, 153c, 152f, and 153d were constant. On the other hand, in the semiconductor module 100, each interval between the external lead terminals 252d, 253b, 252e, 253c, 252f, and 253d is from the sealing resin 8 toward the tip of each other end of the external lead terminals 252d to 253d. It spreads in the plane direction.
　半導体モジュール４００では、半導体モジュールの小型化を維持したまま、各外部導出リード端子２５２ｄ～２５３ｄの間の間隔を所望の大きさに設定することができる。 In the semiconductor module 400, the distance between the external lead terminals 252d to 253d can be set to a desired size while maintaining the miniaturization of the semiconductor module.
　［第５実施形態］
　第５実施形態にかかる半導体モジュール５００は、第１実施形態にかかる半導体モジュール１００の構成要素の材質に一部変更を加えた。構造そのものには変更がないので、半導体モジュール１００を説明した図１、図２を援用して半導体モジュール５００を説明する。 [Fifth Embodiment]
In the semiconductor module 500 according to the fifth embodiment, the material of the components of the semiconductor module 100 according to the first embodiment is partially changed. Since the structure itself is not changed, the semiconductor module 500 will be described with reference to FIGS. 1 and 2 illustrating the semiconductor module 100.
　半導体モジュール１００では、絶縁基材６ａ～６ｃに、エポキシ、ポリイミド等の樹脂を用いた。半導体モジュール５００では、これに代えて、絶縁基材６ａ～６ｄにセラミックスを用いた。より具体的には、絶縁基材６ａ～６ｃを構成するセラミックスに、たとえば、窒化珪素、窒化アルミニウム、アルミナなどを主成分とするセラミックスを用いた。 In the semiconductor module 100, resins such as epoxy and polyimide are used for the insulating bases 6a to 6c. In the semiconductor module 500, instead of this, ceramics are used for the insulating bases 6a to 6d. More specifically, for example, a ceramic mainly composed of silicon nitride, aluminum nitride, alumina, or the like is used as the ceramic constituting the insulating bases 6a to 6c.
　また、半導体モジュール１００では、リード端子５１ａ、５２ａ～５２ｆ、５３ａ～５３ｄの絶縁基材６ａ～６ｃへの固定に接着剤を用いた。半導体モジュール５００では、これに代えて、この部分の固定に、少なくとも、セラミックスの構成成分と反応する活性な金属と、Ａｇと、Ｃｕとを含む合金（図示せず）を用いた。本実施形態においては、具体的には、セラミックスの構成成分と反応する活性な金属として、合金にＴｉを含有させた。ただし、セラミックに含まれる成分と反応する活性な金属はＴｉには限定されず、Ｚｒなど、他の金属であっても良い。なお、セラミックスの構成成分と反応する活性な金属と、Ａｇと、Ｃｕとを含む合金は、活性金属ロウ材と呼ばれる場合がある。 In the semiconductor module 100, an adhesive is used for fixing the lead terminals 51a, 52a to 52f, 53a to 53d to the insulating bases 6a to 6c. In the semiconductor module 500, instead of this, an alloy (not shown) containing at least an active metal that reacts with the components of the ceramic, Ag, and Cu is used to fix this portion. In the present embodiment, specifically, Ti is contained in the alloy as an active metal that reacts with the constituent components of the ceramic. However, the active metal that reacts with the components contained in the ceramic is not limited to Ti, and may be other metals such as Zr. In addition, the active metal which reacts with the structural component of ceramics, the alloy containing Ag and Cu may be called an active metal brazing material.
　セラミックスの構成成分と反応する活性な金属と、Ａｇと、Ｃｕとを含む合金には、必要に応じて、融点を調整するために、Ｔｉ、Ｚｎ、Ｓｎ、Ｉｎ、Ｎｉ、Ｍｎ、Ｃｄなどから選ばれる金属が、１種または複数種、添加される場合がある。なお、本実施形態においては、セラミックに含まれる成分と反応する活性成分として添加されたＴｉは、融点を調整する役割も果たしている。 For alloys containing active metals that react with ceramic constituents, Ag, and Cu, Ti, Zn, Sn, In, Ni, Mn, Cd, etc. are used to adjust the melting point as necessary. One or more selected metals may be added. In the present embodiment, Ti added as an active component that reacts with components contained in the ceramic also plays a role of adjusting the melting point.
　なお、合金にＴｉを添加する場合には、Ｔｉの添加量は、合金の全重量に対して３重量％以下であることが好ましい。Ｔｉの含有量が３重量％を超えると、合金自体が脆化する虞があるからである。本実施形態においては、合金６の配合比率を、Ａｇ６０～８０重量％、Ｃｕ２０～４０重量％、Ｔｉ１～３重量％とした。 In addition, when adding Ti to an alloy, it is preferable that the addition amount of Ti is 3 weight% or less with respect to the total weight of an alloy. This is because if the Ti content exceeds 3% by weight, the alloy itself may become brittle. In this embodiment, the compounding ratio of the alloy 6 is set to Ag 60 to 80% by weight, Cu 20 to 40% by weight, and Ti 1 to 3% by weight.
　半導体モジュール５００の他の構成は、半導体モジュール１００と同じにした。 The other configuration of the semiconductor module 500 is the same as that of the semiconductor module 100.
　リード端子５１ａ、５２ａ～５２ｆ、５３ａ～５３ｄの絶縁基材６ａ～６ｃへの固定は、予め、リード端子５１ａ、５２ａ～５２ｆ、５３ａ～５３ｄに活性金属ロウ材からなるペーストを塗布しておき、その塗布面を絶縁基材６ａ～６ｃへ当接させて、その活性金属ロウ材の融点以上の温度で熱処理することによりおこなうことができる。 The lead terminals 51a, 52a to 52f, 53a to 53d are fixed to the insulating bases 6a to 6c in advance by applying a paste made of an active metal brazing material to the lead terminals 51a, 52a to 52f, 53a to 53d, The coating can be performed by bringing the coated surface into contact with the insulating bases 6a to 6c and performing a heat treatment at a temperature equal to or higher than the melting point of the active metal brazing material.
　セラミックスの構成成分と反応する活性な金属と、Ａｇと、Ｃｕとを含む合金は、リード端子５１ａ、５２ａ～５２ｆ、５３ａ～５３ｄを絶縁基材６ａ～６ｃへ強固に接合する。たとえば、絶縁基材６ａ～６ｃに窒化珪素を用い、リード端子５１ａ、５２ａ～５２ｆ、５３ａ～５３ｄにＣｕを用い、両者を、Ｔｉが添加されたＡｇとＣｕとを含む合金によって接合した場合、合金の絶縁基板（窒化珪素基板）６ａ～６ｃの近傍には、ＴｉＮや、ＭＮが形成される（ただしＭはＳｉ、Ｃｕ、Ｔｉの合金）。すなわち、合金の絶縁基板６ａ～６ｃ近傍のＴｉの濃度が、合金のその他の部分のＴｉの濃度よりも高くなっている。この結果、リード端子２ａ～２ｅと絶縁基板６ａ～６ｃとは、高い強度で接合されている。 An alloy containing an active metal that reacts with a component of ceramic, Ag, and Cu firmly joins the lead terminals 51a, 52a to 52f, and 53a to 53d to the insulating bases 6a to 6c. For example, when silicon nitride is used for the insulating bases 6a to 6c, Cu is used for the lead terminals 51a, 52a to 52f, 53a to 53d, and both are joined by an alloy containing Ag and Cu to which Ti is added, TiN and MN are formed in the vicinity of the alloy insulating substrates (silicon nitride substrates) 6a to 6c (where M is an alloy of Si, Cu, and Ti). That is, the Ti concentration in the vicinity of the insulating substrates 6a to 6c of the alloy is higher than the Ti concentration in other portions of the alloy. As a result, the lead terminals 2a to 2e and the insulating substrates 6a to 6c are bonded with high strength.
　また、セラミックスの構成成分と反応する活性な金属と、Ａｇと、Ｃｕとを含む合金は、一般に、接着剤よりも熱伝導率が高い。そのため、半導体モジュール５００は、半導体スイッチング素子1ａ～１ｆが発生させた熱を、リード端子５１ａ、５２ａ～５２ｆ、５３ａ～５３ｄを経由し、更に絶縁基材６ａ～６ｃを経由して、より効率的に放散させることがきる。 Further, an alloy containing an active metal that reacts with a constituent component of ceramic, Ag, and Cu generally has a higher thermal conductivity than an adhesive. Therefore, in the semiconductor module 500, the heat generated by the semiconductor switching elements 1a to 1f passes through the lead terminals 51a, 52a to 52f, 53a to 53d, and further passes through the insulating bases 6a to 6c. Can be dissipated.
　以上のように、第５実施形態にかかる半導体モジュール５００は、高い強度を備えたセラミックスからなる絶縁基材６ａ～６ｃに、リード端子５１ａ、５２ａ～５２ｆ、５３ａ～５３ｄが、セラミックスの構成成分と反応する活性な金属と、Ａｇと、Ｃｕとを含む合金を介して強固に接合されているため、高い強度を備えている。また、放熱性においても優れている。 As described above, in the semiconductor module 500 according to the fifth embodiment, the lead terminals 51a, 52a to 52f, and 53a to 53d are formed on the insulating bases 6a to 6c made of ceramics having high strength. Since it is firmly joined through an alloy containing an active metal that reacts, Ag, and Cu, it has high strength. Moreover, it is excellent also in heat dissipation.
　以上、本発明の第１～５実施形態にかかる半導体モジュール１００～５００の構造、および製造方法の一例について説明した。しかしながら、本発明がこれらの内容に限定されることはなく、発明の趣旨に沿って、種々の変更を加えることができる。 The structure of the semiconductor modules 100 to 500 according to the first to fifth embodiments of the present invention and the example of the manufacturing method have been described above. However, the present invention is not limited to these contents, and various modifications can be made in accordance with the spirit of the invention.
　たとえば、半導体モジュール１００～５００においては、半導体スイッチング素子１ａ～１ｆとしてＭＯＳＦＥＴを使用したが、これに代えて、ＩＧＢＴ（Insulated Gate Bipolar Transistor；絶縁ゲートバイポーラトランジスタ）と還流ダイオードとを組合せて
、回路を構成するようにしても良い。 For example, in the semiconductor modules 100 to 500, MOSFETs are used as the semiconductor switching elements 1a to 1f. Instead of this, a circuit is formed by combining an IGBT (Insulated Gate Bipolar Transistor) and a free wheel diode. You may make it comprise.
　また、半導体モジュール１００～５００においては、３枚の絶縁基材６ａ～６ｃを使用し、これらを３層に重ねて配置しているが、さらに多くの絶縁基材を使用し、さらに多層に重ねて配置するようにしても良い。 In addition, in the semiconductor modules 100 to 500, three insulating bases 6a to 6c are used and arranged in three layers, but more insulating bases are used and further stacked in multiple layers. May be arranged.
　また、本発明の半導体モジュールの回路構成は任意であり、半導体モジュール１００～５００の等価回路には限定されない。たとえば、半導体モジュール２００では、受動素子としてシャント抵抗素子１０を封止樹脂８内に追加して封止しているが、これに代えて、異常発熱の監視をするためのサーミスタ素子を封止樹脂８内に封止するようにしても良い。 Further, the circuit configuration of the semiconductor module of the present invention is arbitrary, and is not limited to the equivalent circuit of the semiconductor modules 100 to 500. For example, in the semiconductor module 200, the shunt resistor element 10 is added and sealed as a passive element in the sealing resin 8. Instead, a thermistor element for monitoring abnormal heat generation is used as the sealing resin. 8 may be sealed.
　さらに、半導体モジュール１００～５００では、外部導出リード端子１５１ａ～２５３ｄを封止樹脂８の側面の略中央部の高さ位置から外部に導出するように形成しているが、たとえば、最下層又は最上層の絶縁基材６ａ、６ｃの近傍等、その他の高さ位置で導出させるようにしてもよい。 Further, in the semiconductor modules 100 to 500, the external lead-out lead terminals 151a to 253d are formed so as to lead to the outside from the height position of the substantially central portion of the side surface of the sealing resin 8. You may make it derive | lead-out at other height positions, such as the vicinity of the upper insulating base materials 6a and 6c.
１ａ、１ｂ、１ｃ、１ｄ、１ｅ、１ｆ・・・半導体スイッチング素子
２ａ、２ｂ、２ｃ、２ｄ、２ｅ、２ｆ・・・金属ブロック
３ａ、３ｂ、３ｃ、３ｄ、３ｅ、３ｆ・・・ワイヤー
４・・・はんだ
５１ａ、５２ａ、５２ｂ、５２ｃ、５２ｄ、５２ｅ、５２ｆ、５３ａ、５３ｂ、５３ｃ、５３ｄ・・・内部配線リード端子
１５１ａ、１５２ａ、１５２ｂ、１５２ｃ、１５２ｄ、１５２ｅ、１５２ｆ、１５３ａ、１５３ｂ、１５３ｃ、１５３ｄ、２５２ｄ、２５２ｅ、２５２ｆ、２５３ｂ、２５３ｃ、２５３ｄ・・・外部導出リード端子
６ａ、６ｂ、６ｃ・・・絶縁基材
７ａ、７ｂ・・・放熱板
８・・・封止樹脂
１０・・・シャント抵抗素子
１００、２００、３００、４００、５００・・・半導体モジュール 1a, 1b, 1c, 1d, 1e, 1f... Semiconductor switching elements 2a, 2b, 2c, 2d, 2e, 2f... Metal blocks 3a, 3b, 3c, 3d, 3e, 3f. .. Solders 51a, 52a, 52b, 52c, 52d, 52e, 52f, 53a, 53b, 53c, 53d... Internal wiring lead terminals 151a, 152a, 152b, 152c, 152d, 152e, 152f, 153a, 153b, 153c , 153d, 252d, 252e, 252f, 253b, 253c, 253d ... external lead terminals 6a, 6b, 6c ... insulating base materials 7a, 7b ... heat sink 8 ... sealing resin 10 ... · Shunt resistor elements 100, 200, 300, 400, 500 ... semiconductor modules

Claims (13)

  1. 　少なくとも、複数の半導体スイッチング素子と、複数のリード端子と、複数の絶縁基材とが、封止樹脂に封止された半導体モジュールであって、
    　前記リード端子は、前記絶縁基材に固定された内部配線リード端子と、封止樹脂から外部に導出された外部導出リード端子と、を備え、
    　前記内部配線リード端子が固定された前記絶縁基材は、上下方向に間隔を開けて、少なくとも３層に分けて配置され、
    　前記半導体スイッチング素子の電極は、前記内部配線リード端子に、直接または間接に接合されるか、あるいは、ワイヤーボンディングにより接続され、
    　各前記外部導出リード端子は、一端が、前記絶縁基材に固定された前記内部配線リード端子に接合され、他端が、前記封止樹脂から導出され、
    　前記外部導出リード端子の少なくとも一部のものは、それぞれ、複数の屈曲部を有し、
    　全ての前記外部導出リード端子は、前記封止樹脂の側面の同じ高さ部分から外部に導出されている半導体モジュール。     At least a plurality of semiconductor switching elements, a plurality of lead terminals, and a plurality of insulating base materials are semiconductor modules sealed with a sealing resin,
    The lead terminal includes an internal wiring lead terminal fixed to the insulating base material, and an external lead-out lead terminal led out from a sealing resin,
    The insulating base material to which the internal wiring lead terminals are fixed is arranged in at least three layers at intervals in the vertical direction,
    The electrode of the semiconductor switching element is directly or indirectly bonded to the internal wiring lead terminal, or connected by wire bonding,
    Each of the external lead terminals has one end joined to the internal wiring lead terminal fixed to the insulating base and the other end is led out from the sealing resin.
    At least some of the external lead terminals each have a plurality of bent portions,
    All the external lead-out lead terminals are lead out to the outside from the same height portion of the side surface of the sealing resin.
  2. 　前記封止樹脂および前記外部導出リード端子を平面視した場合に、前記外部導出リード端子と前記外部導出リード端子との間の間隔のうち、少なくとも一部の間隔が、前記封止樹脂から前記外部導出リード端子の前記他端の先端方向に向かって、平面方向に広がっている、請求項１に記載された半導体モジュール。 When the sealing resin and the external lead-out lead terminal are viewed in plan, at least a part of the spacing between the external lead-out lead terminal and the external lead-out lead terminal is from the sealing resin to the outside. The semiconductor module according to claim 1, wherein the semiconductor module extends in a planar direction toward a tip direction of the other end of the lead-out lead terminal.
  3. 　前記封止樹脂に、さらに受動部品が封止されている、請求項１または２に記載された半導体モジュール。 The semiconductor module according to claim 1, wherein passive components are further sealed in the sealing resin.
  4. 　前記半導体スイッチング素子の電極が、金属ブロックを介して、前記内部配線リード端子に接合されている、請求項１ないし３のいずれか１項に記載された半導体モジュール。 The semiconductor module according to any one of claims 1 to 3, wherein an electrode of the semiconductor switching element is joined to the internal wiring lead terminal via a metal block.
  5. 　少なくとも３層に分けて配置された、前記内部配線リード端子が固定された前記絶縁基材のうち、中間の層に配置されたものに、両主面間を貫通した開口が形成されている、請求項１ないし４のいずれか１項に記載された半導体モジュール。 Of the insulating base material, in which the internal wiring lead terminals are fixed, arranged in at least three layers, an opening penetrating between both main surfaces is formed in the insulating base material, The semiconductor module described in any one of Claims 1 thru | or 4.
  6. 　全ての前記外部導出リード端子が、前記封止樹脂の外部で、同一方向に屈曲されている、請求項１ないし５のいずれか１項に記載された半導体モジュール。 6. The semiconductor module according to claim 1, wherein all the external lead terminals are bent in the same direction outside the sealing resin.
  7. 　前記絶縁基材がセラミックスからなり、前記リード端子が、少なくとも、前記セラミックスの構成成分と反応する活性な金属と、Ａｇと、Ｃｕとを含む合金を介して、前記絶縁基板に固定された、請求項１ないし６のいずれか１項に記載された半導体モジュール。 The insulating base is made of ceramics, and the lead terminals are fixed to the insulating substrate through an alloy containing at least an active metal that reacts with the constituents of the ceramics, Ag, and Cu. Item 7. The semiconductor module according to any one of Items 1 to 6.
  8. 　前記半導体モジュールがインバータである、請求項１ないし７のいずれか１項に記載された半導体モジュール。 The semiconductor module according to any one of claims 1 to 7, wherein the semiconductor module is an inverter.
  9. 　複数の絶縁基材を準備する工程と、
    　複数の内部配線リード端子を準備する工程と、
    　各前記絶縁基材に、前記内部配線リード端子を固定する工程と、
    　複数の半導体スイッチング素子を準備する工程と、
    前記半導体スイッチング素子の電極を、前記絶縁基材に固定されたいずれかの前記内部配線リード端子に、直接または間接に接合するか、あるいは、ワイヤーボンディングにより接続することにより、前記半導体スイッチング素子を介して、前記絶縁基材を少なくとも３層に重ねて一体化する工程と、
    　複数の外部導出リード端子を準備する工程と、
    　前記外部導出リード端子の少なくとも一部のものに、それぞれ、複数の屈曲部を形成する工程と、
    　各前記外部導出リード端子の一端を、前記絶縁基材に固定されたいずれかの前記内部配線リード端子に接合する工程と、
    　一体化された、複数の前記半導体スイッチング素子と、複数の前記絶縁基材と、複数の前記内部配線リード端子と、複数の前記外部導出リード端子とを、各前記外部導出リード端子の他端を外部に導出させて樹脂封止する工程と、を備え、
    　全ての前記外部導出リード端子が、前記封止樹脂の側面の同じ高さ部分から外部に導出されている半導体モジュールの製造方法。     Preparing a plurality of insulating substrates;
    Preparing a plurality of internal wiring lead terminals;
    Fixing the internal wiring lead terminal to each insulating base;
    Preparing a plurality of semiconductor switching elements;
    An electrode of the semiconductor switching element is directly or indirectly joined to any one of the internal wiring lead terminals fixed to the insulating base material, or connected by wire bonding, via the semiconductor switching element. A step of stacking and integrating the insulating base material in at least three layers;
    Preparing a plurality of external lead terminals;
    Forming a plurality of bent portions on at least a part of the external lead terminals; and
    Bonding one end of each of the external lead terminals to any of the internal wiring lead terminals fixed to the insulating base;
    The plurality of integrated semiconductor switching elements, the plurality of insulating base materials, the plurality of internal wiring lead terminals, the plurality of external lead terminals, and the other end of each external lead terminal. A process of leading out and sealing with resin,
    A method for manufacturing a semiconductor module, wherein all the external lead-out lead terminals are led out from the same height portion of the side surface of the sealing resin.
  10. 　少なくとも、
    　複数の前記外部導出リード端子を準備する工程と、
    　前記外部導出リード端子の少なくとも一部のものに屈曲部を形成する工程と、
    　各前記外部導出リード端子の一端を、前記絶縁基材に固定されたいずれかの前記内部配線リード端子に接合する工程を、
    　複数の前記外部導出リード端子が、１つの環状のリードフレームに一体化された状態で行う、請求項９に記載された半導体モジュールの製造方法。     at least,
    Preparing a plurality of the external lead terminals;
    Forming a bent portion in at least a part of the external lead terminal;
    Bonding one end of each of the external lead terminals to any of the internal wiring lead terminals fixed to the insulating base,
    The method for manufacturing a semiconductor module according to claim 9, wherein the plurality of external lead-out lead terminals are integrated in a single annular lead frame.
  11. 　前記リードフレームに固定された各前記外部導出リード端子の一端を、前記絶縁基材に固定されたいずれかの前記内部配線端子に接合する工程において、前記外部導出リード端子が一体化された前記リードフレームと、前記内部配線リード端子が固定された前記絶縁基材とを、これらに対して垂直方向から見た場合、
    　前記外部導出リード端子の一端と、前記内部配線リード端子との、接合される部分のみが重なっている、請求項１０に記載された半導体モジュールの製造方法。     The lead integrated with the external lead terminal in the step of joining one end of each external lead terminal fixed to the lead frame to any of the internal wiring terminals fixed to the insulating substrate When the frame and the insulating base material to which the internal wiring lead terminal is fixed are viewed from a direction perpendicular to these,
    11. The method of manufacturing a semiconductor module according to claim 10, wherein only a portion to be joined of one end of the external lead terminal and the internal wiring lead terminal is overlapped.
  12. 　前記樹脂封止する工程の後に、
    　さらに、前記封止樹脂から導出された前記外部導出リード端子から、不要な前記リードフレームを切り離す工程を備えた、請求項１０または１１に記載された半導体モジュールの製造方法。     After the resin sealing step,
    The method of manufacturing a semiconductor module according to claim 10, further comprising a step of separating the unnecessary lead frame from the externally derived lead terminal derived from the sealing resin.
  13. 　さらに、前記封止樹脂から導出された全ての前記外部導出リード端子を、同一方向に屈曲する工程を備えた、請求項９ないし１２のいずれか１項に記載された半導体モジュールの製造方法。 The method for manufacturing a semiconductor module according to claim 9, further comprising a step of bending all the external lead terminals derived from the sealing resin in the same direction.
PCT/JP2016/052463 2015-02-02 2016-01-28 Semiconductor module, and method for producing semiconductor module WO2016125674A1 (en)

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