WO2016106948A1 - Coa型woled结构及制作方法 - Google Patents

Coa型woled结构及制作方法 Download PDF

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WO2016106948A1
WO2016106948A1 PCT/CN2015/072599 CN2015072599W WO2016106948A1 WO 2016106948 A1 WO2016106948 A1 WO 2016106948A1 CN 2015072599 W CN2015072599 W CN 2015072599W WO 2016106948 A1 WO2016106948 A1 WO 2016106948A1
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layer
pixel region
disposed
semi
sub
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PCT/CN2015/072599
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French (fr)
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石龙强
邹清华
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深圳市华星光电技术有限公司
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Priority to US14/429,778 priority Critical patent/US9614018B2/en
Publication of WO2016106948A1 publication Critical patent/WO2016106948A1/zh

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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
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    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
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    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a COA type WOLED structure and a manufacturing method thereof.
  • OLED Organic Light-Emitting Diode
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • the COA type WOLED is a combination of COA (CF on Array, color filter attached to array substrate) technology and WOLED technology.
  • COA COA
  • the CF layer red/green/blue light resistance
  • the white light emitted by the OLED white light material passes through the red/green/blue light to obtain the red/green/blue primary colors.
  • this technology is not limited by the large-scale panel fabrication of the organic vapor-deposited reticle, and therefore has a wide range of applications in large-sized OLEDs.
  • FIG. 1 is a schematic structural diagram of a red sub-pixel region of a conventional COA-type WOLED structure, including a substrate 100, a gate electrode 200 disposed on the substrate 100, and a gate electrode disposed on the gate electrode 200
  • An insulating layer 300, an island-shaped oxide semiconductor layer 400 disposed on the gate insulating layer 300, an island-shaped etch barrier layer 500 disposed on the oxide semiconductor layer 400, and the etch barrier layer 500 a source/drain 600, a passivation protection layer 700 disposed on the source/drain 600, a red photoresist layer 710 disposed on the passivation protection layer 700, and a passivation protection layer 700.
  • Another object of the present invention is to provide a method for fabricating a COA type WOLED, which can improve the luminous efficiency of the red/green/blue primary colors after passing through the color filter, and improve the brightness of the COA type WOLED device.
  • the present invention provides a COA type WOLED structure including a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region;
  • the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region respectively include a substrate, a gate disposed on the substrate, a gate insulating layer disposed on the gate, and the gate is disposed on the gate
  • a transparent photoresist layer is respectively disposed between the semi-reflective layer and the anode layer of the red sub-pixel region and the green sub-pixel region, and a thickness of the transparent photoresist layer of the red sub-pixel region is greater than that of the green sub-pixel region The thickness of the transparent photoresist layer.
  • the material of the semi-reflective layer is silver or copper or an alloy of the two, and the material of the cathode layer is aluminum.
  • the transparent photoresist layer of the red sub-pixel region has a thickness of 20 to 300 nm
  • the transparent photoresist layer of the green sub-pixel region has a thickness of 20 to 250 nm.
  • the material of the oxide semiconductor layer is indium gallium zinc oxide, and the material of the anode layer is indium tin oxide.
  • the material of the transparent photoresist layer is SiO 2 or Si 3 N 4 .
  • the invention also provides a method for manufacturing a COA type WOLED, comprising the following steps:
  • Step 1 providing a substrate, corresponding to a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region on the substrate, sequentially forming a gate, a gate insulating layer, an oxide semiconductor layer, an etch barrier layer, and a source /drain, passivation protective layer, red/green/blue photoresist layer, flat layer, and via;
  • Step 2 forming a semi-reflective layer on the flat layer corresponding to the upper of the red/green/blue photoresist layer, the semi-reflective layer contacting the source/drain via the via hole;
  • Step 4 depositing a transparent photoresist layer on the flat layer, the transparent photoresist layer covering the semi-reflective layer of the green sub-pixel region;
  • Step 5 performing patterning on the transparent photoresist layer, and exposing the corresponding transparent photoresist on the red sub-pixel region and the green sub-pixel region to obtain a transparent photoresist located in the red sub-pixel region and the green sub-pixel region.
  • Step 6 Form an anode layer on the semi-reflective layer and the transparent photoresist layer;
  • Step 9 forming a cathode layer on the photoresist spacer and the white light emitting layer
  • Step 10 providing a package cover on the cathode layer to package the COA type WOLED, thereby completing the fabrication of the COA type WOLED.
  • the white light emitting layer is formed by an evaporation method.
  • the material of the semi-reflective layer is silver or copper or an alloy of the two, the material of the cathode layer is aluminum, the material of the oxide semiconductor layer is indium gallium zinc oxide, and the material of the anode layer is indium tin oxide.
  • the material of the transparent photoresist layer is SiO 2 or Si 3 N 4 .
  • the present invention also provides a COA type WOLED structure, including a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region;
  • the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region respectively include a substrate, a gate disposed on the substrate, a gate insulating layer disposed on the gate, and the gate is disposed on the gate
  • the material of the semi-reflective layer is silver or copper or an alloy of the two, and the material of the cathode layer is aluminum;
  • the semi-reflective layer has a thickness of 1 to 100 nm.
  • the COA type WOLED structure of the present invention has a metal semi-reflective layer on the flat layer, a transparent photoresist layer on the semi-reflective layer, and a transparent layer on the red/green/blue photoresist layer.
  • the photoresist layers have different thicknesses to form an optimized microcavity structure for different light colors, thereby utilizing the microcavity resonance effect to effectively improve the luminous efficiency of the red/green/blue primary colors after passing through the color filter.
  • FIG. 1 is a schematic cross-sectional view showing a conventional COA type WOLED structure
  • FIG. 2 is a cross-sectional view showing a red/green/blue sub-pixel region of a COA type WOLED structure of the present invention
  • FIG. 3 is a schematic cross-sectional view showing a structure of a COA type WOLED of the present invention.
  • FIG. 4 is a flow chart of a method for fabricating a COA type WOLED of the present invention.
  • step 2 is a schematic diagram of step 2 of a method for fabricating a COA type WOLED according to the present invention
  • step 3 is a schematic diagram of step 3 of a method for fabricating a COA type WOLED according to the present invention.
  • step 5 is a schematic diagram of step 5 of a method for fabricating a COA type WOLED of the present invention.
  • FIG. 10 is a schematic diagram of steps 6-10 of the method for fabricating a COA type WOLED of the present invention.
  • the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region respectively include a substrate 1 , a gate 2 disposed on the substrate 1 , and a gate 2 disposed on the gate 2 .
  • a gate insulating layer 3 an island-shaped oxide semiconductor layer 4 provided on the gate insulating layer 3, an island-shaped etch barrier layer 5 provided on the oxide semiconductor layer 4, and the etch barrier layer a source/drain 6 on 5, a passivation protective layer 7 provided on the source/drain 6, a red/green/blue photoresist layer 71/72/73 provided on the passivation protective layer 7.
  • a flat layer 8 covering the red/green/blue photoresist layer 71/72/73 on the passivation protective layer 7, disposed on the flat layer 8 and via the via 81 and the source/ a semi-reflective layer 9 in contact with the drain 6 , an anode layer 10 disposed on the semi-reflective layer 9 , a pixel defining layer 11 disposed on the anode layer 10 , and light disposed on the pixel defining layer 11 a spacer 12, a white light emitting layer 13 disposed on the anode layer 10 and the pixel defining layer 11, a cathode layer 14 disposed on the white light emitting layer 13, and a package cover disposed on the cathode layer 14.
  • a transparent photoresist layer 91 is respectively disposed between the semi-reflective layer 9 and the anode layer 10 of the red sub-pixel region and the green sub-pixel region, and the thickness of the transparent photoresist layer 91 of the red sub-pixel region is greater than The thickness of the transparent photoresist layer 91 of the green sub-pixel region, and the blue sub-pixel region is not provided with a transparent photoresist layer.
  • the semi-reflective layer 9 has a thickness of 1 to 100 nm.
  • the transparent photoresist layer 91 of the red sub-pixel region has a thickness of 20 to 300 nm, and the transparent photoresist layer 91 of the green sub-pixel region has a thickness of 20 to 250 nm.
  • the material of the oxide semiconductor layer 4 is IGZO (indium gallium zinc oxide), and the material of the anode layer 10 is ITO (indium tin oxide).
  • a metal semi-reflective layer is disposed on the flat layer
  • a transparent photoresist layer is disposed on the semi-reflective layer
  • corresponding transparent photoresist layers on the red/green/blue photoresist layer have different The thickness forms an optimized microcavity structure for different light colors, thereby utilizing the microcavity resonance effect to effectively improve the luminous efficiency of the red/green/blue primary colors after passing through the color filter.
  • the material of the semi-reflective layer 9 is silver or copper or an alloy of the two.
  • Step 3 As shown in FIG. 7, a transparent photoresist layer is formed on the semi-reflective layer 9 corresponding to the red sub-pixel region.
  • the material of the transparent photoresist layer may be an inorganic material such as SiO 2 (silicon dioxide) or Si 3 N 4 (silicon nitride), or may be an organic material such as a transparent organic photoresist SL-4101.
  • Step 4 as shown in FIG. 8, a transparent photoresist layer is deposited on the flat layer 8, and the transparent photoresist layer covers the semi-reflective layer 9 of the green sub-pixel region.
  • the transparent photoresist layers 91 located in the red sub-pixel region and the green sub-pixel region respectively have different thicknesses. Specifically, the thickness of the transparent photoresist layer 91 of the red sub-pixel region is greater than the green sub-pixel region. The thickness of the transparent photoresist layer 91.
  • Step 6 Form the anode layer 10 on the semi-reflective layer 9 and the transparent photoresist layer 91.
  • the anode layer 10 is formed using physical vapor deposition, yellow light, and an etching process.
  • Step 7 Form a prime defining layer 11 on the flat layer 8 and the anode layer 10, and form a photoresist spacer 12 on the pixel defining layer 11.
  • Step 8 On the anode layer 10 and the pixel defining layer 11, on the photoresist spacer 12 A white light emitting layer 13 is formed between them.
  • the white light emitting layer 13 is formed by an evaporation method.
  • Step 9 Form the cathode layer 14 on the photoresist spacer 12 and the white light emitting layer 13.
  • the material of the cathode layer 14 is aluminum, which serves as a reflective layer.
  • Step 10 A package cover 15 is disposed on the cathode layer 14 to encapsulate the COA type WOLED, thereby completing the fabrication of the COA type WOLED.
  • a metal semi-reflective layer is formed on a flat layer, and a transparent photoresist layer is formed on the semi-reflective layer, and the transparent light corresponding to the red/green/blue photoresist layer is controlled.
  • the thickness of the resist layer is used to obtain the optimized microcavity length for different light colors, thereby utilizing the microcavity resonance effect to improve the luminous efficiency of the red/green/blue primary colors after passing through the color filter, and effectively improving the COA type WOLED device. Brightness.
  • the COA type WOLED structure of the present invention has a metal semi-reflective layer on the flat layer, a transparent photoresist layer on the semi-reflective layer, and transparent light corresponding to the red/green/blue photoresist layer.
  • the resist layers have different thicknesses to form an optimized microcavity structure for different light colors, thereby utilizing the microcavity resonance effect to effectively improve the luminous efficiency of the red/green/blue primary colors after passing through the color filter.
  • the method for fabricating a COA type WOLED of the present invention comprises forming a metal semi-reflective layer on a flat layer, forming a transparent photoresist layer on the semi-reflective layer, and controlling transparent light corresponding to the red/green/blue photoresist layer.
  • the thickness of the resist layer is used to obtain the optimized microcavity length for different light colors, thereby utilizing the microcavity resonance effect to improve the luminous efficiency of the red/green/blue primary colors after passing through the color filter, and effectively improving the COA type WOLED device. Brightness.

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Abstract

一种COA型WOLED结构及制作方法，该结构包括红/绿/蓝色子像素区域，各子像素区域分别包括基板（1）、栅极（2）、栅极绝缘层（3）、氧化物半导体层（4）、蚀刻阻挡层（5）、源/漏极（6）、钝化保护层（7）、红/绿/蓝色光阻层（71/72/73）、平坦层（8）、半反射层（9）、透明光阻层（91）、阳极层（10）、像素定义层(11)、光阻间隔物（12）、白光发光层（13）、阴极层（14）、及封装盖板（15）。通过在平坦层（8）上形成金属半反射层（9），并在半反射层上形成透明光阻层（91），并通过控制红/绿/蓝色光阻层（71/72/73）上所对应的透明光阻层（91）的厚度，以分别得到针对不同光色的最优化的微腔长度，从而利用微腔共振效应提高经过彩色滤光片后的红/绿/蓝三原色的发光效率，有效提高COA型WOLED器件的亮度。

Description

COA型WOLED结构及制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种COA型WOLED结构及制作方法。
背景技术
OLED(Organic Light-Emitting Diode，有机发光二极管)是一种极具发展前景的平板显示技术，它具有十分优异的显示性能，具有自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性，被誉为“梦幻显示器”。再加上其生产设备投资远小于TFT-LCD(Thin Film Transistor-Liquid Crystal Display，薄膜晶体管液晶显示器)，得到了各大显示器厂家的青睐，已成为显示技术领域中第三代显示器件的主力军。目前OLED已处于大规模量产的前夜，随着研究的进一步深入，新技术的不断涌现，OLED显示器件必将有一个突破性的发展。
为实现OLED显示器的全彩化，一种方式是通过白色有机发光二极管(WOLED，White Organic Light Emitting Diode)和彩色滤光层(CF，Color Filter)叠加来实现。其中，WOLED和CF层叠加过程不需要精准的掩膜工艺，就可以实现OLED显示器的高分辨率。
COA型WOLED是COA(CF on Array，彩色滤光片贴附于阵列基板)技术和WOLED技术的结合。利用COA技术，将CF层(红/绿/蓝光阻)做到阵列基板上，然后OLED白光材料所发射的白光通过红/绿/蓝光阻，得到红/绿/蓝三原色的光。与传统底发光OLED结构相比，这种技术不受有机蒸镀光罩在大尺寸面板制作的限制，因此，在大尺寸OLED方面有着广泛的应用。
图1所示为一种现有COA型WOLED结构的红色子像素区域的结构示意图；其包括基板100、设于所述基板100上的栅极200、设于所述栅极200上的栅极绝缘层300、设于所述栅极绝缘层300上的岛状氧化物半导体层400、设于所述氧化物半导体层400上的岛状蚀刻阻挡层500、设于所述蚀刻阻挡层500上的源/漏极600、设于所述源/漏极600上的钝化保护层700、设于所述钝化保护层700上的红色光阻层710、设于所述钝化保护层700上覆盖所述红色光阻层710的平坦层800、设于所述平坦层800上并经由过孔810与所述源/漏极600相接触的阳极层101、设于所述阳极层101上的像素 定义层110、设于所述像素定义层110上的光阻间隔物120。该COA型WOLED结构的绿色子像素区域及蓝色子像素区域的结构与红色子像素区域相同。
上述COA型WOLED的缺点之一是红/绿/蓝三原色的发光效率相对较低。传统顶发射型OLED器件可以通过调节OLED器件的厚度，利用微腔共振效应，使得发光效率得到有效增强。但在上述COA型WOLED中，无法像传统OLED器件一样通过调节器件的厚度，利用微腔效应提高各个光色的发光效率。
发明内容
本发明的目的在于提供一种COA型WOLED结构，其经过彩色滤光片后的红/绿/蓝三原色均具有较高的发光效率。
本发明的另一目的在于提供一种COA型WOLED的制作方法，能够提高经过彩色滤光片后的红/绿/蓝三原色的发光效率，提高COA型WOLED器件的亮度。
为实现上述目的，本发明提供一种COA型WOLED结构，包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；
所述红色子像素区域、绿色子像素区域、及蓝色子像素区域分别包括基板、设于所述基板上的栅极、设于所述栅极上的栅极绝缘层、设于所述栅极绝缘层上的岛状氧化物半导体层、设于所述氧化物半导体层上的岛状蚀刻阻挡层、设于所述蚀刻阻挡层上的源/漏极、设于所述源/漏极上的钝化保护层、设于所述钝化保护层上的红/绿/蓝色光阻层、设于所述钝化保护层上覆盖所述红/绿/蓝色光阻层的平坦层、设于所述平坦层上并经由过孔与所述源/漏极相接触的半反射层、设于所述半反射层上的阳极层、设于所述阳极层上的像素定义层、设于所述像素定义层上的光阻间隔物、设于所述阳极层与像素定义层上的白光发光层、设于所述白光发光层上的阴极层、及设于所述阴极层上的封装盖板；
所述红色子像素区域和绿色子像素区域的半反射层与阳极层之间分别设有透明光阻层，并且所述红色子像素区域的透明光阻层的厚度大于所述绿色子像素区域的透明光阻层的厚度。
所述半反射层的材料为银或铜或二者的合金，所述阴极层的材料为铝。
所述半反射层的厚度为1～100nm。
所述红色子像素区域的透明光阻层的厚度为20～300nm，所述绿色子像素区域的透明光阻层的厚度为20～250nm。
所述氧化物半导体层的材料为氧化铟镓锌，所述阳极层的材料为氧化铟锡。
所述透明光阻层的材料为SiO2或Si3N4。
本发明还提供一种COA型WOLED的制作方法，包括如下步骤：
步骤1、提供基板，在所述基板上分别对应红色子像素区域、绿色子像素区域、及蓝色子像素区域，依次形成栅极、栅极绝缘层、氧化物半导体层、蚀刻阻挡层、源/漏极、钝化保护层、红/绿/蓝色光阻层、平坦层、及过孔；
步骤2、在所述平坦层上分别对应所述红/绿/蓝色光阻层的上方形成半反射层，所述半反射层经由所述过孔与所述源/漏极相接触；
步骤3、在红色子像素区域所对应的半反射层上形成透明光阻层；
步骤4、在所述平坦层上再次沉积透明光阻层，所述透明光阻层覆盖绿色子像素区域的半反射层；
步骤5、对所述透明光阻层进行图案化处理，对红色子像素区域与绿色子像素区域上对应的透明光阻不进行曝光，得到位于红色子像素区域与绿色子像素区域的透明光阻层；
步骤6、在所述半反射层与透明光阻层上形成像阳极层；
步骤7、在所述平坦层与阳极层上形成素定义层，并在所述像素定义层上形成光阻间隔物；
步骤8、在所述阳极层与像素定义层上，于所述光阻间隔物之间形成白光发光层；
步骤9、在所述光阻间隔物与白光发光层上形成阴极层；
步骤10、在所述阴极层上设置封装盖板，对COA型WOLED进行封装，从而完成COA型WOLED的制作。
所述步骤2采用物理气相沉积、黄光、及蚀刻制程形成所述半反射层。
所述步骤8采用蒸镀方法形成所述白光发光层。
所述半反射层的材料为银或铜或二者的合金，所述阴极层的材料为铝，所述氧化物半导体层的材料为氧化铟镓锌，所述阳极层的材料为氧化铟锡，所述透明光阻层的材料为SiO2或Si3N4。
本发明还提供一种COA型WOLED结构，包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；
所述红色子像素区域、绿色子像素区域、及蓝色子像素区域分别包括基板、设于所述基板上的栅极、设于所述栅极上的栅极绝缘层、设于所述栅极绝缘层上的岛状氧化物半导体层、设于所述氧化物半导体层上的岛状 蚀刻阻挡层、设于所述蚀刻阻挡层上的源/漏极、设于所述源/漏极上的钝化保护层、设于所述钝化保护层上的红/绿/蓝色光阻层、设于所述钝化保护层上覆盖所述红/绿/蓝色光阻层的平坦层、设于所述平坦层上并经由过孔与所述源/漏极相接触的半反射层、设于所述半反射层上的阳极层、设于所述阳极层上的像素定义层、设于所述像素定义层上的光阻间隔物、设于所述阳极层与像素定义层上的白光发光层、设于所述白光发光层上的阴极层、及设于所述阴极层上的封装盖板；
所述红色子像素区域和绿色子像素区域的半反射层与阳极层之间分别设有透明光阻层，并且所述红色子像素区域的透明光阻层的厚度大于所述绿色子像素区域的透明光阻层的厚度；
其中，所述半反射层的材料为银或铜或二者的合金，所述阴极层的材料为铝；
其中，所述半反射层的厚度为1～100nm。
本发明的有益效果：本发明的COA型WOLED结构，其平坦层上设有金属半反射层，半反射层上设有透明光阻层，并且红/绿/蓝色光阻层上所对应的透明光阻层具有不同的厚度，形成针对不同光色的最优化的微腔结构，从而利用微腔共振效应，有效提高经过彩色滤光片后的红/绿/蓝三原色的发光效率。本发明的COA型WOLED的制作方法，通过在平坦层上形成金属半反射层，并在半反射层上形成透明光阻层，并通过控制红/绿/蓝色光阻层上所对应的透明光阻层的厚度，以分别得到针对不同光色的最优化的微腔长度，从而利用微腔共振效应提高经过彩色滤光片后的红/绿/蓝三原色的发光效率，有效提高COA型WOLED器件的亮度。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为一种现有COA型WOLED结构的剖面示意图；
图2为本发明COA型WOLED结构的红/绿/蓝色子像素区域的剖面示意图；
图3为本发明COA型WOLED结构的剖面示意图；
图4为本发明COA型WOLED的制作方法的流程图；
图5为本发明COA型WOLED的制作方法的步骤1的示意图；
图6为本发明COA型WOLED的制作方法的步骤2的示意图；
图7为本发明COA型WOLED的制作方法的步骤3的示意图；
图8为本发明COA型WOLED的制作方法的步骤4的示意图；
图9为本发明COA型WOLED的制作方法的步骤5的示意图；
图10为本发明COA型WOLED的制作方法的步骤6-10的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请同时参阅图2与图3，本发明提供一种COA型WOLED结构，如图3所示，包括红色子像素区域、绿色子像素区域、及蓝色子像素区域。
如图2所示，所述红色子像素区域、绿色子像素区域、及蓝色子像素区域分别包括基板1、设于所述基板1上的栅极2、设于所述栅极2上的栅极绝缘层3、设于所述栅极绝缘层3上的岛状氧化物半导体层4、设于所述氧化物半导体层4上的岛状蚀刻阻挡层5、设于所述蚀刻阻挡层5上的源/漏极6、设于所述源/漏极6上的钝化保护层7、设于所述钝化保护层7上的红/绿/蓝色光阻层71/72/73、设于所述钝化保护层7上覆盖所述红/绿/蓝色光阻层71/72/73的平坦层8、设于所述平坦层8上并经由过孔81与所述源/漏极6相接触的半反射层9、设于所述半反射层9上的阳极层10、设于所述阳极层10上的像素定义层11、设于所述像素定义层11上的光阻间隔物12、设于所述阳极层10与像素定义层11上的白光发光层13、设于所述白光发光层13上的阴极层14、及设于所述阴极层14上的封装盖板15。
具体的，所述红色子像素区域和绿色子像素区域的半反射层9与阳极层10之间分别设有透明光阻层91，并且所述红色子像素区域的透明光阻层91的厚度大于所述绿色子像素区域的透明光阻层91的厚度，所述蓝色子像素区域不设置透明光阻层。
优选的，所述半反射层9的材料为银或铜或二者的合金，所述阴极层14的材料为铝，其作为反射层。。
优选的，所述半反射层9的厚度为1～100nm。所述红色子像素区域的透明光阻层91的厚度为20～300nm，所述绿色子像素区域的透明光阻层91的厚度为20～250nm。
优选的，所述氧化物半导体层4的材料为IGZO(氧化铟镓锌)，所述阳极层10的材料为ITO(氧化铟锡)。
所述透明光阻层91的材料可以是SiO2(二氧化硅)、Si3N4(氮化硅)等无机材料，也可以是透明有机光阻SL-4101等有机材料。
在上述COA型WOLED结构中，其平坦层上设有金属半反射层，半反射层上设有透明光阻层，并且红/绿/蓝色光阻层上所对应的透明光阻层具有不同的厚度，形成针对不同光色的最优化的微腔结构，从而利用微腔共振效应，有效提高经过彩色滤光片后的红/绿/蓝三原色的发光效率。
请参阅图4，本发明还提供一种COA型WOLED的制作方法，包括如下步骤：
步骤1、如图5所示，提供基板1，在所述基板1上分别对应红色子像素区域、绿色子像素区域、及蓝色子像素区域，依次形成栅极2、栅极绝缘层3、氧化物半导体层4、蚀刻阻挡层5、源/漏极6、钝化保护层7、红/绿/蓝色光阻层71/72/73、平坦层8、及过孔81。
优选的，所述氧化物半导体层4的材料为IGZO(氧化铟镓锌)。
步骤2、如图6所示，在所述平坦层8上分别对应所述红/绿/蓝色光阻层71/72/73的上方形成半反射层9，所述半反射层9经由所述过孔81与所述源/漏极6相接触。
具体地，采用物理气相沉积、黄光、及蚀刻制程形成所述半反射层9。
优选的，所述半反射层9的材料为银或铜或二者的合金。
步骤3、如图7所示，在红色子像素区域所对应的半反射层9上形成透明光阻层。
具体地，所述透明光阻层的材料可以是SiO2(二氧化硅)、Si3N4(氮化硅)等无机材料，也可以是透明有机光阻SL-4101等有机材料。
步骤4、如图8所示，在所述平坦层8上再次沉积透明光阻层，所述透明光阻层覆盖绿色子像素区域的半反射层9。
步骤5、如图9所示，对所述透明光阻层进行图案化处理，对红色子像素区域与绿色子像素区域上对应的透明光阻层不进行曝光，得到位于红色子像素区域与绿色子像素区域的透明光阻层91。
此时得到的位于红色子像素区域与绿色子像素区域的透明光阻层91分别具有不同的厚度，具体的，所述红色子像素区域的透明光阻层91的厚度大于所述绿色子像素区域的透明光阻层91的厚度。
步骤6、在所述半反射层9与透明光阻层91上形成阳极层10。
优选的，所述阳极层10的材料为ITO(氧化铟锡)。
具体地，采用物理气相沉积、黄光、及蚀刻制程形成所述阳极层10。
步骤7、在所述平坦层8与阳极层10上形成素定义层11，并在所述像素定义层11上形成光阻间隔物12。
步骤8、在所述阳极层10与像素定义层11上，于所述光阻间隔物12 之间形成白光发光层13。
具体地，采用蒸镀方法形成所述白光发光层13。
步骤9、在所述光阻间隔物12与白光发光层13上形成阴极层14。
优选的，所述阴极层14的材料为铝，其作为反射层。
步骤10、在所述阴极层14上设置封装盖板15，对COA型WOLED进行封装，从而完成COA型WOLED的制作。
在上述COA型WOLED的制作方法中，通过在平坦层上形成金属半反射层，并在半反射层上形成透明光阻层，并通过控制红/绿/蓝色光阻层上所对应的透明光阻层的厚度，以分别得到针对不同光色的最优化的微腔长度，从而利用微腔共振效应提高经过彩色滤光片后的红/绿/蓝三原色的发光效率，有效提高COA型WOLED器件的亮度。
综上所述，本发明的COA型WOLED结构，其平坦层上设有金属半反射层，半反射层上设有透明光阻层，并且红/绿/蓝色光阻层上所对应的透明光阻层具有不同的厚度，形成针对不同光色的最优化的微腔结构，从而利用微腔共振效应，有效提高经过彩色滤光片后的红/绿/蓝三原色的发光效率。本发明的COA型WOLED的制作方法，通过在平坦层上形成金属半反射层，并在半反射层上形成透明光阻层，并通过控制红/绿/蓝色光阻层上所对应的透明光阻层的厚度，以分别得到针对不同光色的最优化的微腔长度，从而利用微腔共振效应提高经过彩色滤光片后的红/绿/蓝三原色的发光效率，有效提高COA型WOLED器件的亮度。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (14)

  1. 一种COA型WOLED结构，包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；
    所述红色子像素区域、绿色子像素区域、及蓝色子像素区域分别包括基板、设于所述基板上的栅极、设于所述栅极上的栅极绝缘层、设于所述栅极绝缘层上的岛状氧化物半导体层、设于所述氧化物半导体层上的岛状蚀刻阻挡层、设于所述蚀刻阻挡层上的源/漏极、设于所述源/漏极上的钝化保护层、设于所述钝化保护层上的红/绿/蓝色光阻层、设于所述钝化保护层上覆盖所述红/绿/蓝色光阻层的平坦层、设于所述平坦层上并经由过孔与所述源/漏极相接触的半反射层、设于所述半反射层上的阳极层、设于所述阳极层上的像素定义层、设于所述像素定义层上的光阻间隔物、设于所述阳极层与像素定义层上的白光发光层、设于所述白光发光层上的阴极层、及设于所述阴极层上的封装盖板；
    所述红色子像素区域和绿色子像素区域的半反射层与阳极层之间分别设有透明光阻层，并且所述红色子像素区域的透明光阻层的厚度大于所述绿色子像素区域的透明光阻层的厚度。
  2. 如权利要求1所述的COA型WOLED结构，其中，所述半反射层的材料为银或铜或二者的合金，所述阴极层的材料为铝。
  3. 如权利要求1所述的COA型WOLED结构，其中，所述半反射层的厚度为1～100nm。
  4. 如权利要求1所述的COA型WOLED结构，其中，所述红色子像素区域的透明光阻层的厚度为20～300nm，所述绿色子像素区域的透明光阻层的厚度为20～250nm。
  5. 如权利要求1所述的COA型WOLED结构，其中，所述氧化物半导体层的材料为氧化铟镓锌，所述阳极层的材料为氧化铟锡。
  6. 如权利要求1所述的COA型WOLED结构，其中，所述透明光阻层的材料为SiO2或Si3N4。
  7. 一种COA型WOLED的制作方法，包括如下步骤：
    步骤1、提供基板，在所述基板上分别对应红色子像素区域、绿色子像素区域、及蓝色子像素区域，依次形成栅极、栅极绝缘层、氧化物半导体层、蚀刻阻挡层、源/漏极、钝化保护层、红/绿/蓝色光阻层、平坦层、及过孔；
    步骤2、在所述平坦层上分别对应所述红/绿/蓝色光阻层的上方形成半反射层，所述半反射层经由所述过孔与所述源/漏极相接触；
    步骤3、在红色子像素区域所对应的半反射层上形成透明光阻层；
    步骤4、在所述平坦层上再次沉积透明光阻层，所述透明光阻层覆盖绿色子像素区域的半反射层；
    步骤5、对所述透明光阻层进行图案化处理，对红色子像素区域与绿色子像素区域上对应的透明光阻层不进行曝光，得到位于红色子像素区域与绿色子像素区域的透明光阻层；
    步骤6、在所述半反射层与透明光阻层上形成阳极层；
    步骤7、在所述平坦层与阳极层上形成像素定义层，并在所述像素定义层上形成光阻间隔物；
    步骤8、在所述阳极层与像素定义层上，于所述光阻间隔物之间形成白光发光层；
    步骤9、在所述光阻间隔物与白光发光层上形成阴极层；
    步骤10、在所述阴极层上设置封装盖板，对COA型WOLED进行封装，从而完成COA型WOLED的制作。
  8. 如权利要求7所述的COA型WOLED的制作方法，其中，所述步骤2采用物理气相沉积、黄光、及蚀刻制程形成所述半反射层。
  9. 如权利要求7所述的COA型WOLED的制作方法，其中，所述步骤8采用蒸镀方法形成所述白光发光层。
  10. 如权利要求7所述的COA型WOLED的制作方法，其中，所述半反射层的材料为银或铜或二者的合金，所述阴极层的材料为铝，所述氧化物半导体层(4)的材料为氧化铟镓锌，所述阳极层的材料为氧化铟锡，所述透明光阻层的材料为SiO2或Si3N4。
  11. 一种COA型WOLED结构，包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；
    所述红色子像素区域、绿色子像素区域、及蓝色子像素区域分别包括基板、设于所述基板上的栅极、设于所述栅极上的栅极绝缘层、设于所述栅极绝缘层上的岛状氧化物半导体层、设于所述氧化物半导体层上的岛状蚀刻阻挡层、设于所述蚀刻阻挡层上的源/漏极、设于所述源/漏极上的钝化保护层、设于所述钝化保护层上的红/绿/蓝色光阻层、设于所述钝化保护层上覆盖所述红/绿/蓝色光阻层的平坦层、设于所述平坦层上并经由过孔与所述源/漏极相接触的半反射层、设于所述半反射层上的阳极层、设于所述阳极层上的像素定义层、设于所述像素定义层上的光阻间隔物、设于所述阳 极层与像素定义层上的白光发光层、设于所述白光发光层上的阴极层、及设于所述阴极层上的封装盖板；
    所述红色子像素区域和绿色子像素区域的半反射层与阳极层之间分别设有透明光阻层，并且所述红色子像素区域的透明光阻层的厚度大于所述绿色子像素区域的透明光阻层的厚度；
    其中，所述半反射层的材料为银或铜或二者的合金，所述阴极层的材料为铝；
    其中，所述半反射层的厚度为1～100nm。
  12. 如权利要求11所述的COA型WOLED结构，其中，所述红色子像素区域的透明光阻层的厚度为20～300nm，所述绿色子像素区域的透明光阻层的厚度为20～250nm。
  13. 如权利要求11所述的COA型WOLED结构，其中，所述氧化物半导体层的材料为氧化铟镓锌，所述阳极层的材料为氧化铟锡。
  14. 如权利要求11所述的COA型WOLED结构，其中，所述透明光阻层的材料为SiO2或Si3N4。
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