WO2016090874A1 - 曝光显影方法、曝光控制***和曝光显影*** - Google Patents

曝光显影方法、曝光控制***和曝光显影*** Download PDF

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Publication number
WO2016090874A1
WO2016090874A1 PCT/CN2015/080884 CN2015080884W WO2016090874A1 WO 2016090874 A1 WO2016090874 A1 WO 2016090874A1 CN 2015080884 W CN2015080884 W CN 2015080884W WO 2016090874 A1 WO2016090874 A1 WO 2016090874A1
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Prior art keywords
mask
substrate
alignment mark
exposure
opening pattern
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PCT/CN2015/080884
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English (en)
French (fr)
Inventor
余学权
徐先华
刘志
王志强
张伟
成学佩
Original Assignee
京东方科技集团股份有限公司
合肥京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 合肥京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/129,507 priority Critical patent/US9946170B2/en
Publication of WO2016090874A1 publication Critical patent/WO2016090874A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an exposure development method, an exposure control system, and an exposure development system.
  • the production process of the color filter substrate generally involves two exposures, one exposure for forming a black matrix, and double exposure for forming a filter layer corresponding to each sub-pixel and a spacer.
  • the prior art generally adopts a mask plate having the same size as the substrate (or slightly larger than the substrate size) to expose the substrate by double mark alignment, and once the production line of the substrate is determined, the size of the mask is generally fixed. In order to produce a larger-sized color film substrate, only a production line for manufacturing a mask can be replaced, and the production cost is high.
  • an aspect of the present invention provides an exposure developing method for exposing and developing a substrate when a substrate size is larger than a mask size, the exposure developing method comprising:
  • a plurality of different regions of the substrate are respectively exposed and developed by the mask, and the plurality of different regions are spliced into all regions that require exposure and development.
  • each of the plurality of different regions is adjacent to at least one edge of the substrate, and a substrate alignment mark corresponding to the region is formed at an edge of the substrate adjacent to the region, The substrate alignment mark corresponds to a corresponding mask alignment mark on the mask;
  • the step of separately exposing and developing a plurality of different regions of the substrate by using the mask includes:
  • Step S11 determining an angle at which the substrate is inclined with respect to the mask according to at least two substrate alignment marks, and adjusting the substrate or the mask to correct an angle of inclination;
  • Step S12 adjusting the substrate or the mask for each of the plurality of different regions
  • the board aligns the substrate alignment marks on the substrate corresponding to the area with corresponding mask alignment marks on the mask.
  • each of the plurality of different regions is adjacent to at least a first side edge or a second side edge of the substrate, and corresponding to each of the first side edge or the second side edge of the substrate a substrate alignment mark of the region; the first side edge and the second side edge of the mask are formed with corresponding mask alignment marks; wherein the first side of the substrate and the mask Corresponding to one side, the second side of the substrate corresponds to the second side of the mask, wherein the first side and the second side of the substrate or the mask are opposite sides;
  • the step S12 includes:
  • step of aligning the substrate alignment mark with the mask alignment mark in step S12 comprises:
  • the substrate is a substrate on which a black matrix is formed, and the black matrix defines an opening pattern forming a sub-pixel;
  • the step S1 further includes:
  • Step S13 identifying, in the region of the plurality of different regions adjacent to the first side edge of the substrate, an opening pattern corresponding to the alignment mark of the mask on the second side of the mask, and Aligning the center of the mask mark of the second side edge of the mask with the center of the corresponding opening pattern; and/or for the second side edge of the substrate in the plurality of different areas a region, identifying an opening pattern corresponding to the alignment mark of the mask on the first side edge of the mask, and centering the alignment mark of the mask located at the first side edge of the mask The center of the corresponding opening pattern is aligned.
  • the step of identifying the opening pattern corresponding to the alignment mark of the mask in the step S13 includes:
  • the opening pattern in which the center of the alignment mark of the mask is placed is identified based on the opening pattern previously stored.
  • the mask alignment mark includes a sub-pattern, and the sub-pattern is a “Tian” shape, and an intersection of the cross in the “Tian”-shaped sub-pattern is a center of the mask alignment mark, and the The size of the "Field” sub-picture is the same as the size of the opening pattern;
  • the opening pattern corresponding to the alignment mark of the mask is identified, including:
  • Aligning the center of the reticle mark of the mask with the center of the corresponding opening pattern in the step S13 includes:
  • the "Tian" shaped sub-pattern of the mask registration mark is aligned with the corresponding opening pattern.
  • the exposure development method further includes masking the previous exposure area during multiple exposures to avoid repeated exposure to the same area.
  • Another aspect of the present invention also provides an exposure control system comprising:
  • control module configured to adjust a relative position of the mask plate and the substrate when the size of the substrate to be exposed and developed is larger than a size of the mask, so that the mask plate respectively exposes and develops a plurality of different regions of the substrate, the plurality of different regions Splicing into all areas where exposure development is required.
  • control module includes:
  • An image recognition sub-module configured to acquire an image including a substrate alignment mark and a mask alignment mark, and identify a substrate alignment mark on the substrate and a mask on the mask according to the acquired image Board alignment mark
  • a first adjusting submodule configured to determine an angle of inclination of the substrate relative to the mask according to at least two substrate alignment marks on the substrate, and adjust the substrate or the mask to correct an inclined angle ;
  • a second adjustment submodule configured to adjust the substrate or the mask plate for each of the plurality of different regions to make a substrate alignment mark corresponding to the region on the substrate and the mask The corresponding mask on the board is aligned with the alignment mark.
  • the image recognition sub-module is further configured to: when the substrate is a substrate on which a black matrix is formed, identify an opening pattern corresponding to a mask mark of the mask located in the exposed area; a pattern defined by the black matrix to form a sub-pixel;
  • the control module further includes:
  • the third adjustment sub-module is configured to adjust the center of the mask mark of the mask located in the exposed area to be aligned with the center of the corresponding opening pattern.
  • the image recognition sub-module is specifically configured to identify an opening pattern of the center of the mask mark by the pre-stored opening pattern.
  • the mask alignment mark includes a sub-pattern, and the sub-pattern is a “Tian” shape, and an intersection of the cross in the “Tian”-shaped sub-pattern is a center of the mask alignment mark, and the The size of the "Field” sub-picture is the same as the size of the opening pattern;
  • the third adjustment sub-module is further configured to identify a cross of the cross in the "field" sub-graph of the mask mark Point the corresponding opening pattern and align the "Tian" sub-pattern with the corresponding opening pattern.
  • control module covers the previous exposure area during multiple exposures to avoid repeated exposure of the same area.
  • Yet another aspect of the present invention provides an exposure development system including the above exposure control system.
  • the exposure development method, the exposure control system, and the exposure development system provided by the present invention a plurality of regions of the substrate are respectively exposed by a mask, and a plurality of regions are collectively spliced into all regions to be exposed, so that a smaller one can be used.
  • the mask plate exposes and develops a relatively large substrate.
  • 1a-1e are schematic diagrams showing the relative positional relationship between a mask and a substrate at different stages during exposure of a substrate according to an exposure and development method according to an embodiment of the present invention
  • FIG. 2 is a schematic flow chart of an exposure and development method according to Embodiment 1 of the present invention.
  • FIG. 3 is a schematic diagram showing the relative positional relationship between a substrate and a mask when performing the second exposure in the exposure and development method according to Embodiment 2 of the present invention
  • FIG. 4 is a schematic flow chart of an exposure and development method according to Embodiment 3 of the present invention.
  • FIG. 5 is a schematic flow chart of an exposure and development method according to Embodiment 4 of the present invention.
  • FIG. 6 is a schematic diagram of an optional mask alignment mark provided in accordance with an embodiment of the present invention.
  • FIG. 7 is a schematic view showing the position of the alignment mark and the opening of the mask after step 507 or step 510 in FIG. 5;
  • Embodiment 8 is a schematic flow chart of an exposure and development method according to Embodiment 5 of the present invention.
  • FIG. 9 is a schematic structural diagram of an exposure control system according to an embodiment of the present invention.
  • the present invention provides a registration exposure method or an exposure development method.
  • a plurality of different regions on a substrate having a larger size are sequentially exposed and developed by using a mask having a smaller size, thereby performing exposure to a substrate of a larger size using a mask of a smaller size.
  • development. Using the alignment exposure provided by the present invention The method enables the low-generation production line to produce a color film substrate larger than the design size of the generation line, thereby increasing the utilization rate of the production line and reducing the production cost.
  • the alignment exposure method provided by the present invention can also be used to produce other substrates having a repeating structure, and correspondingly, the same technical effects can be achieved.
  • only the secondary exposure in the process of producing a color filter substrate will be described.
  • the vertical dimension of the substrate to be exposed is equivalent to the vertical dimension of the mask (indicated as 20 in the figure), the substrate The lateral dimension is twice the lateral dimension of the mask, and the substrate alignment mark "XX" is formed on the left and right edges of the substrate, and the mask alignment mark is formed on the left and right edges of the mask. " ⁇ " (only the marks and areas to be exposed, and the pattern areas of the mask are shown in the figure, their edge portions are not shown).
  • the substrate alignment mark on the left edge falls within the field of view of the left camera of the exposure development system used.
  • the method for performing exposure and development on the substrate can be as shown in FIG. 2, and specifically includes:
  • Step 201 identifying a (left) substrate alignment mark at a left edge of the substrate, and recording coordinates of the left substrate alignment mark.
  • the left and right side cameras of the exposure developing system are respectively aligned with the alignment marks of the left and right masks of the mask.
  • the coordinates of the center of the alignment mark of the left mask are (0, 0)
  • the coordinates of the center of the alignment mark of the right mask are (L, 0)
  • L is the width of the mask.
  • the coordinates of the center of the alignment mark of the left substrate can be obtained by referring to the alignment mark of the left mask as (x1, y1).
  • Step 202 The control carrier moves the substrate to the left by a preset distance, so that the right substrate alignment mark falls into the field of view of the right camera.
  • the substrate can be moved to the left by a distance of L.
  • the right substrate alignment mark falls within the field of view of the right camera.
  • the relative positional relationship between the mask and the substrate can be as shown in FIG. 1b.
  • Step 203 identifying a (right) substrate alignment mark at a right edge of the substrate, and recording coordinates of the right substrate alignment mark.
  • the coordinates of the right substrate alignment mark may be determined according to the relative positions of the right substrate alignment mark and the right mask alignment mark, and the coordinates of the right substrate alignment mark center are (x2, y2).
  • Step 204 Determine an angle at which the substrate is inclined with respect to the mask according to the left substrate alignment mark and the right substrate alignment mark.
  • Step 205 rotating the mask according to the angle determined in step 204 to correct the angle of the tilt.
  • the stage can also be rotated to correct the angle of inclination.
  • the positional relationship between the mask and the substrate can be as shown in FIG. 1c.
  • the meaning of correcting the angle of inclination in the present invention means that the angle of inclination between the substrate and the mask sheet is close to zero, for example, by rotation or the like. It should be noted that the angle of the tilt refers to the angle between the corresponding alignment mark lines in the case where the substrate and the plane of the mask are parallel.
  • Step 206 The mobile carrier aligns the right substrate alignment mark of the substrate with the right mask alignment mark of the mask, and then performs step 207.
  • the carrier can be moved in the x-axis direction, then moved in the y-axis direction, or the carrier can be moved in the y-axis direction, and then moved in the x-axis direction.
  • the movement process should not cause the substrate to be opposed to the mask.
  • other alignment standards may be selected to align the substrate alignment mark and the mask alignment mark.
  • the relative positional relationship between the mask and the substrate can be as shown in FIG. 1d.
  • step 207 the first exposure is performed.
  • Step 208 the mobile carrier aligns the left substrate alignment mark of the substrate with the alignment mask of the left mask of the mask, and then performs step 209.
  • the relative positional relationship between the mask and the substrate can be as shown in FIG. 1e.
  • step 209 a second step exposure is performed.
  • step 206-step 207 and step 208-step 209 may be reversed, and in actual application, after step 204, before exposure development, step 206 or step 208 may be performed first, followed by slope. Adjustments, the corresponding technical solutions can achieve the same effect, and should also fall within the scope of protection of the present invention.
  • the first embodiment of the present invention different areas on a larger-sized substrate are sequentially exposed and developed using a mask of a smaller size, thereby completing exposure development of the entire substrate (required exposure area).
  • the angle of inclination of the substrate relative to the mask is also calculated, and the substrate is accurately aligned with the mask according to the calculated angle to achieve accurate exposure.
  • the lateral dimension of the substrate to be exposed in the second embodiment of the present invention is larger than the lateral dimension of the mask but less than twice the lateral dimension of the mask.
  • the area exposed by the first step can be covered to avoid multiple exposures or repeated exposures to the same area.
  • the substrate alignment mark may also be used.
  • the upper side edge and the lower side edge of the substrate are formed.
  • the mask alignment mark can be made corresponding to the upper side edge and the lower side edge of the mask board, and the corresponding alignment exposure is completed.
  • the corresponding technical solutions should also fall within the scope of protection of the present invention. That is to say, the manner in which the substrate alignment mark and the mask alignment mark are disposed in the present invention is not particularly limited as long as the alignment can be achieved.
  • the above examples are for illustrative purposes only.
  • the following embodiments of the present invention also show examples of otherwise arranging the alignment marks described above.
  • the vertical dimension of the substrate to be fabricated in the third embodiment of the present invention is three times the vertical dimension of the mask, and the lateral dimension is a mask.
  • the horizontal size is twice as large.
  • the exposure of the substrate can be completed in six steps in the direction indicated by the arrow in the figure.
  • six substrate alignment marks need to be made at both side edges of the substrate, each substrate alignment mark corresponding to a one-step exposure area. The process of making substrate alignment marks can be done while making the black matrix.
  • the exposure development method provided by the fourth embodiment of the present invention is different from the exposure development method provided in the first embodiment, in that the aperture pattern corresponding to one sub-pixel is used as the second alignment mark to make the mask and the substrate more accurately aligned.
  • the specific process of the method can be as shown in FIG. 5, including:
  • Step 501 - step 506 corresponds to step 201 - step 206;
  • Step 507 identifying an opening pattern corresponding to the alignment mark of the left mask according to the pattern of the pre-stored sub-pixel, and centering the alignment mark of the left mask and the center of the corresponding opening pattern alignment.
  • the alignment mark of the right mask should be aligned with the alignment mark of the right substrate, and the left mask can be made by moderately rotating the substrate or the mask.
  • the center of the alignment mark is aligned with the center of the corresponding opening pattern.
  • the opening pattern here refers to a pattern defined by a black matrix to form a sub-pixel.
  • the opening pattern can be drawn and stored in advance.
  • the center coordinate of the alignment mark of the left mask is calculated according to the pattern of the alignment mark of the left mask, and then according to the stored opening.
  • the pattern identifies an opening on the substrate from the center of the alignment mark on the left mask in the captured pattern.
  • the pattern, the center of the alignment mark on the left side of the mask falls into the identified opening pattern.
  • the center of the identified opening pattern is then calculated, and the stage or mask is moved to match the center of the left mask alignment mark with the center of the identified opening pattern.
  • Such a scheme is suitable for implementing a corresponding alignment process when the pattern of the alignment marks of the mask is relatively simple.
  • a sub-pattern may be drawn at the center of the aligning mark of the reticle, the sub-pattern is a "Tian” shape, and the "Tian"-shaped sub-pattern is cross-shaped.
  • An intersection point is a center of the sub-pattern, and the sub-pattern size is consistent with a size of the opening portion graphic;
  • the opening portion pattern corresponding to the intersection of the cross in the "Tian"-shaped sub-pattern can be identified, and when the alignment is performed, the sub-pattern of the alignment mask of the left mask is matched.
  • the pattern of the opening portion can be aligned, such a alignment does not require a complicated calculation process, which reduces the difficulty of the corresponding control system, and the alignment is more precise.
  • the size of the pre-drawn opening pattern and the "Tian”-shaped sub-pattern in the reticle mark of the mask completely coincides with the size of the opening pattern in the image captured by the CCD camera or the camera.
  • step 508 the first exposure is performed.
  • step 509 the mobile carrier aligns the left substrate alignment mark of the substrate with the alignment mask of the left mask of the mask.
  • Step 510 identifying an opening pattern corresponding to the alignment mark of the right mask according to the pre-stored opening pattern, and centering the center of the alignment mark of the right mask and the corresponding opening pattern quasi.
  • the alignment mark of the left mask should also be aligned with the alignment mark of the left substrate.
  • step 511 a second step exposure is performed.
  • step 507 or step 510 the positional map of the mask mark " ⁇ " and the opening "mouth” may be as shown in FIG.
  • the mask and substrate can only be aligned by a set of alignment marks.
  • the mask adjustment and the substrate alignment can be substantially ensured by the slope adjustment, there may still be a small error.
  • the exposure and development method provided by the fourth embodiment of the present invention can utilize a sub-pixel as the second alignment mark to achieve more accurate alignment between the mask and the substrate.
  • the vertical dimension of the substrate to be fabricated in the fifth embodiment of the present invention is twice the vertical dimension of the mask, and the lateral dimension of the substrate is The lateral dimensions of the mask are identical.
  • a substrate alignment mark may be formed on each of the upper side edge and the lower side edge of the substrate, and correspondingly, the mask pair is formed corresponding to the upper side edge and the lower side edge of the mask board. Bit mark. The alignment of the mask and the substrate is achieved in a manner consistent with the first embodiment.
  • the alignment of the mask plate with the corresponding area of the substrate can be achieved by the substrate alignment mark disposed at the edge of the substrate.
  • the size of the substrate is not an integral multiple of the size of the mask, the area where the exposure and development has been completed can be covered to avoid repeated exposure. It can be understood that the development exposure can be performed in the same manner when the substrate size is much larger than the size of the mask, without being limited to the above.
  • the substrate and the mask are realized by adjusting the slope of the substrate relative to the mask and aligning a substrate alignment mark with a mask alignment mark.
  • the board is aligned, but in practice, the manner in which the substrate is aligned with the mask is not limited thereto.
  • Those skilled in the art can also align the mask by other alignment methods as needed in the process of implementing the present invention, and the corresponding technical solutions should also fall within the protection scope of the present invention.
  • the present invention also provides an exposure control system that can be used to implement the above-described exposure development method, the exposure control system comprising:
  • control module configured to adjust a relative position of the mask and the substrate when the size of the substrate to be exposed and developed is larger than a size of the mask, so that the mask respectively exposes and develops a plurality of different regions of the substrate, the plurality of The different regions are spliced into all areas where exposure development is required.
  • the exposure and development system provided by the present invention adjusts the relative positions of the mask and the substrate when the substrate to be exposed and developed is larger than the mask, and exposes a plurality of different regions of the substrate by the mask, respectively.
  • the different regions are spliced into all areas where exposure development is required.
  • the low-generation production line can produce a large-sized color film substrate, thereby improving the utilization rate of the production line and reducing the production cost.
  • control module specifically includes:
  • An image recognition sub-module 901 configured to acquire an image including a substrate and a mask, and identify a substrate alignment mark on the substrate and a mask alignment mark on the mask according to the acquired image;
  • a first adjusting sub-module 902 configured to determine an angle of the substrate tilted relative to the mask according to at least two substrate alignment marks on the substrate, and adjust the substrate or the mask to correct the tilt angle;
  • a second adjustment sub-module 903 configured to adjust, for each of the plurality of different regions, the substrate or the mask to make a substrate alignment mark corresponding to the region on the substrate and the mask The corresponding mask on the diaphragm is aligned with the alignment mark.
  • the image recognition sub-module 901 is further configured to: when the substrate is a substrate on which a black matrix is formed, identify an opening pattern corresponding to a mask mark of the mask located in the exposed area;
  • the control module further includes:
  • the third adjustment sub-module 904 is configured to adjust the center of the mask alignment mark located in the exposure area to be aligned with the center of the corresponding opening pattern.
  • the image recognition sub-module 901 is specifically configured to recognize the opening pattern of the center of the mask mark by the pre-stored opening pattern.
  • control module covers the previous exposure area during multiple exposures to avoid repeated exposure to the same area.
  • the present invention also provides an exposure developing system comprising the exposure control system of any of the above.
  • the exposure and development system may further include a motor that drives the mask or the substrate to move, a mask plate that has a mask pattern, a carrier that carries the mask, a camera that collects images, and the like. , will not be described in detail here.

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

提供了一种曝光显影方法、曝光控制***和曝光显影***。曝光显影方法用于在基板尺寸大于掩膜板尺寸时对基板进行曝光显影，其包括：利用掩膜板（20）分别对基板（10）多个不同区域进行曝光显影，多个不同区域拼接为全部需要曝光显影的区域。这种曝光显影方法，能够使得低代生产线生产较大尺寸的彩膜基板，从而提高产线利用率，降低生产成本。

Description

曝光显影方法、曝光控制***和曝光显影***
本申请要求于2014年12月12日递交的、申请号为201410766896.4、发明名称为“曝光显影方法和***、曝光控制***”的中国专利申请的优先权，其全部内容通过引用并入本申请中。
技术领域
本发明涉及显示技术领域，尤其涉及一种曝光显影方法、曝光控制***和曝光显影***。
背景技术
彩膜基板的生产工艺一般涉及到两次曝光，一次曝光用于形成黑矩阵，二次曝光用于形成各个子像素对应的滤光层以及隔垫物。现有技术一般采用与基板的尺寸一致(或略微大于基板尺寸)的掩膜板采用双标记对位的方式对基板进行曝光，而基板的生产线一旦确定，掩膜板的尺寸一般也是固定的，为了生产更大尺寸的彩膜基板只能更换用于制造掩膜板的生产线，生产成本较高。
发明内容
本发明的目的是提供一种能够在基板尺寸大于掩膜板尺寸时对基板进行曝光显影的方法、***以及相应的控制***。
为了达到上述目的，本发明的一个方面提供了一种曝光显影方法，该方法用于在基板尺寸大于掩膜板尺寸时对基板进行曝光显影，所述曝光显影方法包括：
利用所述掩膜板分别对基板多个不同区域进行曝光显影，所述多个不同区域拼接为全部需要曝光显影的区域。
进一步的，所述多个不同区域中的每一个区域至少与所述基板的一个边缘相邻，且在与该区域相邻的基板的边缘制作有对应于该区域的基板对位标记，所述的基板对位标记与所述掩膜板上对应的掩膜板对位标记相对应；
所述利用所述掩膜板分别对基板多个不同区域进行曝光显影的步骤包括：
步骤S11，根据至少两个基板对位标记确定所述基板相对于所述掩膜板倾斜的角度，并调整所述基板或者所述掩膜板以补正倾斜的角度；
步骤S12，针对所述多个不同区域中的每一个区域，调整所述基板或者所述掩膜 板使所述基板上对应于该区域的基板对位标记与所述掩膜板上对应的掩膜板对位标记对准。
进一步的，所述多个不同区域中的每一个区域至少与基板的第一侧边缘或者第二侧边缘相邻，且在所述基板的第一侧边缘或者第二侧边缘制作有对应与各个区域的基板对位标记；所述掩膜板的第一侧边缘和第二侧边缘制作有对应的掩膜板对位标记；其中，所述基板的第一侧和所述掩膜板的第一侧对应，所述基板的第二侧和所述掩膜板的第二侧对应，其中所述基板或掩膜板的第一侧和第二侧为相对的两侧；
所述步骤S12包括：
对于所述多个不同区域中与基板的第一侧边缘相邻的区域，调整所述基板或者所述掩膜板将该区域对应的基板对位标记与所述掩膜板第一侧的掩膜板对位标记对准；对于与基板的第二侧边缘相邻的区域，调整所述基板或者所述掩膜板将该区域对应的基板对位标记与所述掩膜板第二侧的掩膜板对位标记对准。
进一步的，步骤S12中将基板对位标记与掩膜板对位标记对准的步骤包括：
将基板对位标记的中心和掩膜板对位标记的中心对准。
进一步的，所述基板为制作有黑矩阵的基板，所述黑矩阵限定了形成子像素的开口部图形；
所述步骤S12之后，所述步骤S1还包括：
步骤S13，对于所述多个不同区域中与基板的第一侧边缘相邻的区域，识别所述掩膜板第二侧的掩膜板对位标记所对应的开口部图形，并将位于所述掩膜板第二侧边缘的掩膜板对位标记的中心与所对应的开口部图形的中心对准；和/或对于所述多个不同区域中与基板的第二侧边缘相邻的区域，识别位于所述掩膜板第一侧边缘的掩膜板对位标记所对应的开口部图形，并将位于所述掩膜板第一侧边缘的掩膜板对位标记的中心与所对应的开口部图形的中心对准。
进一步的，所述步骤S13中识别掩膜板对位标记所对应的开口部图形的步骤包括：
根据预先存储的开口部图形识别掩膜板对位标记的中心所落入的开口部图形。
进一步的，所述掩膜板对位标记包括一子图形，所述子图形为“田”字形，该“田”字形子图形中十字的交点为掩膜板对位标记的中心，且所述“田”字形子图形大小与开口部图形的大小一致；
所述步骤S13中识别掩膜板对位标记所对应的开口部图形，包括：
识别掩膜板对位标记的“田”字形子图形中十字的交点所对应的开口部图形；
所述步骤S13中将掩膜板对位标记的中心与所对应的开口部图形的中心对准包括：
将掩膜板对位标记的“田”字形子图形与所对应的开口部图形对准。
在一个示例中，所述曝光显影方法还包括在多次曝光的过程中，遮盖之前的曝光区域以避免对同一区域重复曝光。
本发明的另一方面还提供了一种曝光控制***，包括：
控制模块，用于在需要曝光显影的基板尺寸大于掩膜板尺寸时，调整掩膜板和基板的相对位置，使掩膜板分别对基板多个不同区域进行曝光显影，所述多个不同区域拼接为全部需要曝光显影的区域。
进一步的，所述控制模块包括：
图像识别子模块，用于获取包含有基板对位标记和掩膜板对位标记的图像，并根据获取到的图像识别所述基板上的基板对位标记和所述掩膜板上的掩膜板对位标记；
第一调整子模块，用于根据基板上的至少两个基板对位标记确定所述基板相对于所述掩膜板倾斜的角度，并调整所述基板或者所述掩膜板以补正倾斜的角度；
第二调整子模块，用于针对所述多个不同区域中的每一个区域，调整所述基板或者所述掩膜板使所述基板上对应于该区域的基板对位标记与所述掩膜板上对应的掩膜板对位标记对准。
进一步的，所述图像识别子模块，还用于在所述基板为制作有黑矩阵的基板时，识别位于曝光区域的掩膜板对位标记所对应的开口部图形；所述开口部图形为所述黑矩阵限定的用以形成子像素的图形；
所述控制模块还包括：
第三调整子模块，用于调整位于曝光区域的掩膜板对位标记的中心与所对应的开口部图形的中心对准。
进一步的，所述图像识别子模块，具体用于根据预先存储的开口部图形识别所述掩膜板对位标记的中心所在的开口部图形。
进一步的，所述掩膜板对位标记包括一子图形，所述子图形为“田”字形，该“田”字形子图形中十字的交点为掩膜板对位标记的中心，且所述“田”字形子图形大小与开口部图形的大小一致；
所述第三调整子模块还用于识别掩膜板对位标记的“田”字形子图形中十字的交 点所对应的开口部图形，并将“田”字形子图形与所对应的开口部图形对准。
在一个示例中，所述控制模块在多次曝光的过程中，遮盖之前的曝光区域以避免对同一区域重复曝光。
本发明的还一方面提供了一种曝光显影***，包括上述的曝光控制***。
本发明提供的曝光显影方法、曝光控制***以及曝光显影***中，利用掩膜板对基板的多个区域分别进行曝光，多个区域共同拼接为全部需要曝光的区域，这样就能够使用较小的掩膜板对相对较大的基板进行曝光显影。采用本发明提供的曝光显影方法，能够使得低世代生产线生产较大尺寸的彩膜基板，从而提高产线利用率，降低生产成本。
附图说明
图1a-图1e为根据本发明的实施例一提供的曝光显影方法对基板曝光的过程中在不同阶段掩膜板与基板的相对位置关系的示意图；
图2为根据本发明的实施例一提供的曝光显影方法的流程示意图；
图3为根据本发明实施例二提供的曝光显影方法中进行第二步曝光时基板与掩膜板的相对位置关系示意图；
图4为根据本发明实施例三提供的曝光显影方法的流程示意图；
图5为根据本发明实施例四提供的曝光显影方法的流程示意图；
图6为根据本发明的一个实施例提供的一种可选的掩膜板对位标记的示意图；
图7为图5中的步骤507或者步骤510之后掩膜板对位标记与开口部的位置示意图；
图8为本发明实施例五提供的曝光显影方法的流程示意图；
图9为本发明的实施例提供的曝光控制***的结构示意图。
具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案，而不能以此来限制本发明的保护范围。
本发明提供了一种对位曝光方法或曝光显影方法。在该方法中，利用具有较小尺寸的掩膜板依次对具有较大尺寸的基板上的多个不同区域进行曝光显影，从而使用较小尺寸的掩膜板完成对较大尺寸的基板的曝光显影。采用本发明提供的对位曝光方 法能够使得低世代生产线生产大于该世代线设计尺寸的彩膜基板，从而提高生产线利用率，降低生产成本。当然，本发明提供的对位曝光方法也可以用于生产其他具有重复结构的基板，相应的，也能够达到同样的技术效果。以下仅结合对彩膜基板制作过程中的二次曝光进行说明。
实施例一
如图1a所示，假设在本发明的实施例一中，需要曝光的基板(图中表示为10)的竖向尺寸与掩膜板(图中表示为20)的竖向尺寸相当，该基板的横向尺寸为掩膜板的横向尺寸的两倍，在基板的左右两侧边缘均制作有基板对位标记“XX”，在掩膜板的左右两侧边缘均制作有掩膜板对位标记“◇”(图中仅示出了标记和需要曝光的区域，以及掩膜板的图形区域，未示出它们的边缘部分)。在该基板放入到承载台上之后，位于左侧边缘的基板对位标记落入到所使用的曝光显影***的左侧摄像机的视野范围内。对该基板进行曝光显影方法可以如图2所示，具体包括：
步骤201，识别基板的左侧边缘处的(左侧)基板对位标记，并记录该左侧基板对位标记的坐标。
一般的，曝光显影***的左右侧摄像机分别对准掩膜板的左右掩膜板对位标记。此时，在本发明实施例中，假设左侧掩膜板对位标记的中心的坐标为(0，0)，则右侧掩膜板对位标记的中心的坐标为(L，0)，其中L为掩膜板的宽度。此时，可以以左侧掩膜板对位标记为参照获取左侧基板对位标记的中心的坐标为(x1，y1)。
步骤202，控制承载台将所述基板向左移动预设距离，使右侧基板对位标记落入右侧摄像机的视野范围。
具体的，可以将基板向左移动L的距离，此时，右侧基板对位标记会落入右侧摄像机的视野范围内。经步骤202之后，掩膜板与基板的相对位置关系可以如图1b所示。
步骤203，识别基板的右侧边缘处的(右侧)基板对位标记，并记录该右侧基板对位标记的坐标。
具体的，可以根据右侧基板对位标记与右侧掩膜板对位标记的相对位置确定右侧基板对位标记的坐标，假设右侧基板对位标记中心的坐标为(x2，y2)。
步骤204，根据左侧基板对位标记和右侧基板对位标记确定基板相对于掩膜板倾斜的角度。
具体地，根据左右侧基板对位标记与掩模板上的掩膜板对位标记的相对位置关系确定所述基板相对于所述掩膜板倾斜的角度，这里的倾斜角度α的计算方式可以为 α＝arc tan(y2-y1)/(x2-x1)。
步骤205，根据步骤204确定的角度旋转掩膜板以补正倾斜的角度。
当然，在具体实施时，也可以旋转承载台以补正倾斜的角度。经步骤205之后，掩膜板与基板的位置关系可以如图1c所示。在本发明中补正倾斜的角度的含义是指例如通过旋转等方式使基板和掩膜板之间倾斜的角度接近于零。需要注意的是，倾斜的角度是指基板和掩膜板所在平面平行的情况下两者各自对应对位标记连线之间的夹角。
步骤206，移动承载台使基板的右侧基板对位标记与掩膜板的右侧掩膜板对位标记对准，之后执行步骤207。
在具体实施时，可以使承载台在x轴方向移动，之后在y轴方向移动，或者，使承载台在y轴方向移动，之后在x轴方向移动，当然移动过程不应使基板相对于掩膜板发生旋转。本发明实施例中所指的使基板对位标记与掩膜板对位标记对准，可以是指使基板对位标记的几何中心与掩膜板对位标记的几何中心对准。当然在实际的应用中，在选择的对位标记的形状不同时，也可以选择其他的对准标准使基板对位标记和掩膜板对位标记对准。
经步骤206之后，掩膜板与基板的相对位置关系可以如图1d所示。
步骤207，进行第一步曝光。
步骤208，移动承载台使基板的左侧基板对位标记与掩膜板的左侧掩膜板对位标记对准，之后执行步骤209。
经步骤208之后，掩膜板与基板的相对位置关系可以如图1e所示。
步骤209，进行第二步曝光。
至此，完成了对整个基板的曝光。
在具体应用中，步骤206-步骤207和步骤208-步骤209的顺序可以对调，并且在实际应用中，在步骤204之后，在曝光显影之前，也可以先执行步骤206或步骤208，之后进行斜率调整，相应的技术方案能够达到相同的效果，也应该落入本发明的保护范围。
在本发明实施例一中，使用较小尺寸的掩膜板依次对较大尺寸的基板上不同的区域进行曝光显影，从而完成了对整个基板(需要曝光区域)的曝光显影。另外，本发明的这一实施例中，还计算基板相对于掩膜板倾斜的角度，根据计算得到的角度调整基板与掩膜板准确对准，达到准确曝光的目的。
实施例二
如图3所示，与实施例一所要制作的基板不同的是，本发明实施例二所要曝光的基板的横向尺寸大于掩膜板的横向尺寸但小于掩膜板的横向尺寸的两倍。此时，在第二步曝光时，如图3所示，可以对第一步曝光的区域进行遮盖，避免对同一区域的多次曝光或重复曝光。
另外，需要指出的是，本发明实施例一或实施例二中，虽然记载的是在基板的左侧和右侧边缘设置对位标记的情形，但是在实际应用中，基板对位标记也可以制作在基板的上侧边缘和下侧边缘，此时可以在掩膜板的上侧边缘和下侧边缘对应的制作掩膜板对位标记，并完成相应的对位曝光。其对应的技术方案同样应落入本发明的保护范围。也就是说，本发明对基板对位标记和掩模板对位标记的设置方式不做特别限制，只要能够实现对准的目的即可。上述的示例仅用作说明的目的。本发明的下述实施例还示出了以其他方式设置上述的对准标记的示例。
实施例三
如图4所示，与实施例一所要制作的基板不同的是，本发明实施例三所要制作的基板的竖向尺寸为掩膜板的竖向尺寸的三倍，并且横向尺寸为掩膜板的横向尺寸的两倍。此时，可以按照图中箭头所示方向分六步完成对基板的曝光。并且在进行曝光之前，需要在基板的两侧边缘处制作六个基板对位标记，每一个基板对位标记对应于一步曝光的区域。制作基板对位标记的过程可以在制作黑矩阵时完成。
实施例四
本发明实施例四提供的曝光显影方法与实施例一提供的曝光显影方法不同的是，利用一个子像素对应的开口部图形作为第二个对位标记使掩膜板和基板更精确的对位，该方法的具体流程可以如图5所示，包括：
步骤501-步骤506对应于步骤201-步骤206；
步骤507，根据预先存储的子像素的图形识别左侧掩膜板对位标记所对应的开口部图形，并将所述左侧掩膜板对位标记的中心与所对应的开口部图形的中心对准。
在实际应用中，在执行步骤507的过程中，应保持右侧掩膜板对位标记与右侧基板对位标记对准，通过对基板或者掩膜板进行适度的旋转使左侧掩膜板对位标记的中心与所对应的开口部图形的中心对准。这里的开口部图形是指由黑矩阵所限定的用以形成子像素的图形。
在实际应用中，可以预先绘制开口部图形并存储，在识别时，首先根据左侧掩膜板对位标记的图形计算出左侧掩膜板对位标记的中心坐标，之后根据存储的开口部图形在拍摄到的图形中自左侧掩膜板对位标记中心处识别出一个位于基板上的开口部 图形，左侧掩膜板对位标记中心落入识别出的开口部图形中。之后计算识别出的开口部图形的中心，并移动承载台或者掩膜板使左侧掩膜板对位标记中心与识别出的开口部图形的中心相对应。这样的方案适于在掩膜板对位标记的图案较为简单时实现相应的对位过程。
在另一种可选的方案中，如图6所示，可以在掩膜板对位标记的中心绘制一子图形，该子图形为“田”字形，该“田”字形子图形中十字的交点为所述子图形的中心，且所述子图形大小与开口部图形的大小一致；
此时，识别左侧掩膜板对位标记所对应的开口部图形，可以具体为识别左侧掩膜板对位标记的“田”字形子图形中十字的交点所对应的开口部图形；将左侧掩膜板对位标记的中心与所对应的开口部图形的中心对准可以具体为：将左侧掩膜板对位标记的“田”字形子图形与所对应的开口部图形对准。这样，在识别子像素图形时，识别“田”字形子图形中十字的交点所对应的开口部图形即可，在进行对位时，将左侧掩膜板对位标记的子图形与所对应的开口部图形对准即可，这样的对位无需繁杂的计算过程，降低了相应的控制***的制作难度，且对位更为精准。
可以理解，上述预先绘制的开口部图形以及掩膜板对位标记中的“田”字形子图形的大小与CCD相机或摄像机拍摄得到的图像中开口部图形的大小完全一致。在将预先绘制的开口部图形以及制作在掩膜板对位标记中的“田”字形子图形的中心与实际拍摄得到的一个开口部图形的中心对准后，预先绘制的开口部图形以及制作在掩膜板对位标记中的“田”字形子图形不应整体落在实际拍摄得到的一个开口部图形内部，也不应超出实际拍摄得到的一个开口部图形的边界。
步骤508，进行第一步曝光。
步骤509，移动承载台使基板的左侧基板对位标记与掩膜板的左侧掩膜板对位标记对准。
步骤510，根据预先存储的开口部图形识别右侧掩膜板对位标记所对应的开口部图形，并将所述右侧掩膜板对位标记的中心与所对应的开口部图形的中心对准。
相应的，在执行步骤510的过程中，也应保持左侧掩膜板对位标记与左侧基板对位标记对准。
步骤511，进行第二步曝光。
步骤507或者步骤510之后，掩膜板对位标记“◇”与开口部“口”的位置示意图可以如图7所示。
在具体实施时，为了保证显示效果，不会在基板的显示区域(需要曝光的区 域)制作对位标记，掩膜板与基板只能通过一组对位标记进行对准。本发明实施例一中，通过斜率调整虽然能够基本保证掩膜板与基板进本对准，但仍可能存在较小的误差。在此基础上，本发明实施例四提供的曝光显影方法，利用一个子像素作为第二个对位标记，能够实现掩膜板与基板更准确的对位。
实施例五
与实施例一、二、三或四不同的是，如图8所示，本发明实施例五所要制作的基板的竖向尺寸是掩膜板的竖向尺寸的两倍，基板的横向尺寸与掩膜板的横向尺寸一致。此时，如图8所示，可以在基板的上侧边缘和下侧边缘各制作一个基板对位标记，相应的，在掩膜板的上侧边缘和下侧边缘对应的制作掩膜板对位标记。并按照与实施例一相一致的方式，实现掩膜板与基板的对准。
根据本发明实施例一、二、三或四提供的方案，本领域技术人员可以理解的是，只要所要曝光显影的基板的横向尺寸或者竖向尺寸中有一个尺寸不大于掩膜板对应尺寸的两倍，都能够使得需要曝光的各个区域至少与基板的边缘相邻，此时，都可以通过设置在基板边缘的基板对位标记实现对掩膜板与基板相应区域的对位。相应的，当基板的尺寸不为掩膜板的尺寸整数倍时，可以对已完成曝光显影的区域进行遮盖，避免重复曝光。可以理解，在基板尺寸远大于掩膜板尺寸时，可以采用相同的方法进行显影曝光，而不限于上述的情形。
作为一种可选的方式，可以在每一步曝光时对本步曝光时不需要曝光的区域进行遮盖，避免因衍射作用导致相邻区域被曝光。
需要指出的是，本发明实施例一至五中，虽然仅描述了通过调整基板相对于掩膜板的斜率并使一个基板对位标记与一个掩膜板对位标记相对准以实现基板与掩膜板对准，但是在实际应用中，实现基板与掩膜板对位的方式并不局限于此。本领域技术人员在实施本发明的过程中也可以根据需要采用其他的对位方式对掩膜板进行对位，其对应的技术方案也应该落入本发明的保护范围。
本发明还提供了一种曝光控制***，可用于实现上述的曝光显影方法，该曝光控制***包括：
控制模块，用于在需要曝光显影的基板的尺寸大于掩膜板的尺寸时，调整掩膜板和基板的相对位置，使掩膜板分别对基板多个不同区域进行曝光显影，所述多个不同区域拼接为全部需要曝光显影的区域。
本发明提供的曝光显影***，在需要曝光显影的基板大于掩膜板时，调整掩膜板和基板的相对位置，利用掩膜板分别对基板多个不同区域进行曝光显影，所述多个 不同区域拼接为全部需要曝光显影的区域。采用本发明提供的曝光显影方法，能够使得低世代生产线生产较大尺寸的彩膜基板，从而提高产线利用率，降低生产成本。
进一步的，如图9所示，所述控制模块具体包括：
图像识别子模块901，用于获取包含有基板和掩膜板的图像，并根据获取到的图像识别所述基板上的基板对位标记和所述掩膜板上的掩膜板对位标记；
第一调整子模块902，用于根据基板上的至少两个基板对位标记确定所述基板相对于所述掩膜板倾斜的角度，并调整所述基板或者所述掩膜板以补正倾斜的角度；
第二调整子模块903，用于针对所述多个不同区域中的每一个区域，调整所述基板或者所述掩膜板使所述基板上对应于该区域的基板对位标记与所述掩膜板上对应的掩膜板对位标记对准。
进一步的，图像识别子模块901，还用于在所述基板为制作有黑矩阵的基板时，识别位于曝光区域的掩膜板对位标记所对应的开口部图形；
所述控制模块还包括：
第三调整子模块904，用于调整位于曝光区域的掩膜板对位标记的中心与所对应的开口部图形的中心对准。
进一步的，图像识别子模块901，具体用于根据预先存储的开口部图形识别所述掩膜板对位标记的中心所在的开口部图形。
另外，所述控制模块在多次曝光的过程中，遮盖之前的曝光区域以避免对同一区域重复曝光。
本发明还提供了一种曝光显影***，包括上述任一项所述的曝光控制***。
当然在实际应用中，所述的曝光显影***还可能包括驱动掩膜板或者基板运动的马达，制作有掩膜图案的掩膜板，承载掩膜板的承载台，用于采集图像的摄像机等，在此不再详细说明。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (15)

  1. 一种曝光显影方法，所述曝光显影方法用于在基板尺寸大于掩膜板尺寸时对基板进行曝光显影，所述曝光显影方法包括：
    利用所述掩膜板分别对基板多个不同区域进行曝光显影，所述多个不同区域拼接为全部需要曝光显影的区域。
  2. 如权利要求1所述的方法，其中，所述多个不同区域中的每一个区域至少与所述基板的一个边缘相邻，且在与所述区域相邻的基板的边缘制作有对应于该区域的基板对位标记，所述的基板对位标记与所述掩膜板上对应的掩膜板对位标记相对应；
    所述利用所述掩膜板分别对基板多个不同区域进行曝光显影的步骤包括：
    步骤S11，根据至少两个基板对位标记确定所述基板相对于所述掩膜板倾斜的角度，并调整所述基板或者所述掩膜板以补正倾斜的角度；
    步骤S12，针对所述多个不同区域中的每一个区域，调整所述基板或者所述掩膜板使所述基板上对应于该区域的基板对位标记与所述掩膜板上对应的掩膜板对位标记对准。
  3. 如权利要求2所述的方法，其中，所述多个不同区域中的每一个区域至少与基板的第一侧边缘或者第二侧边缘相邻，且在所述基板的第一侧边缘或者第二侧边缘制作有对应与各个区域的基板对位标记；所述掩膜板的第一侧边缘和第二侧边缘制作有对应的掩膜板对位标记；其中，所述基板的第一侧和所述掩膜板的第一侧对应，所述基板的第二侧和所述掩膜板的第二侧对应，其中所述基板或掩膜板的第一侧和第二侧为相对的两侧；
    所述步骤S12包括：
    对于所述多个不同区域中与基板的第一侧边缘相邻的区域，调整所述基板或者所述掩膜板将该区域对应的基板对位标记与所述掩膜板第一侧的掩膜板对位标记对准；对于与基板的第二侧边缘相邻的区域，调整所述基板或者所述掩膜板将该区域对应的基板对位标记与所述掩膜板第二侧的掩膜板对位标记对准。
  4. 如权利要求3所述的方法，其中，
    步骤S12中将基板对位标记与掩膜板对位标记对准的步骤包括：
    将基板对位标记的中心和掩膜板对位标记的中心对准。
  5. 如权利要求4所述的方法，其中，所述基板为制作有黑矩阵的基板，所述黑矩阵限定了形成子像素的开口部图形；
    在所述步骤S12之后，所述方法还包括：
    步骤S13，对于所述多个不同区域中与基板的第一侧边缘相邻的区域，识别位于所述掩膜板第二侧边缘的掩膜板对位标记所对应的开口部图形，并将位于所述掩膜板第二侧边缘的掩膜板对位标记的中心与所对应的开口部图形的中心对准；和/或
    对于所述多个不同区域中与基板的第二侧边缘相邻的区域，识别位于所述掩膜板第一侧边缘的掩膜板对位标记所对应的开口部图形，并将位于所述掩膜板第一侧边缘的掩膜板对位标记的中心与所对应的开口部图形的中心对准。
  6. 如权利要求5所述的方法，其中，所述步骤S13中识别掩膜板对位标记所对应的开口部图形的步骤，包括：
    根据预先存储的开口部图形识别掩膜板对位标记的中心所对应的开口部图形。
  7. 如权权利要求5所述的方法，其中，所述掩膜板对位标记包括一子图形，所述子图形为“田”字形，该“田”字形子图形中十字的交点为掩膜板对位标记的中心，且所述“田”字形子图形大小与开口部图形的大小一致；
    所述步骤S13中识别掩膜板对位标记所对应的开口部图形的步骤包括：
    识别掩膜板对位标记的“田”字形子图形中十字的交点所对应的开口部图形；
    所述步骤S13中将掩膜板对位标记的中心与所对应的开口部图形的中心对准包括：
    将掩膜板对位标记的“田”字形子图形与所对应的开口部图形对准。
  8. 根据权利要求1-7中任一项所述的曝光显影方法，还包括在多次曝光的过程中，遮盖之前的曝光区域以避免对同一区域重复曝光。
  9. 一种曝光控制***，包括：
    控制模块，用于在需要曝光显影的基板尺寸大于掩膜板尺寸时，调整掩膜板和基板的相对位置，使掩膜板分别对基板多个不同区域进行曝光显影，所述多个不同区域拼接为全部需要曝光显影的区域。
  10. 如权利要求9所述的曝光控制***，其中，所述控制模块包括：
    图像识别子模块，用于获取包含有基板对位标记和掩膜板对位标记的图像，并根据获取到的图像识别所述基板上的基板对位标记和所述掩膜板上的掩膜板对位标记：
    第一调整子模块，用于根据基板上的至少两个基板对位标记确定所述基板相对于所述掩膜板倾斜的角度，并调整所述基板或者所述掩膜板以补正倾斜的角度；
    第二调整子模块，用于针对所述多个不同区域中的每一个区域，调整所述基板或者所述掩膜板使所述基板上对应于该区域的基板对位标记与所述掩膜板上对应的掩膜板对位标记对准。
  11. 如权利要求10所述的曝光控制***，其中，所述图像识别子模块，还用于在所述基板为制作有黑矩阵的基板时，识别位于曝光区域的掩膜板对位标记所对应的开口部图形；所述开口部图形为所述黑矩阵限定的用以形成子像素的图形；
    所述控制模块还包括：
    第三调整子模块，用于调整位于曝光区域的掩膜板对位标记的中心与所对应的开口部图形的中心对准。
  12. 如权利要求11所述的曝光控制***，其中，所述图像识别子模块还用于根据预先存储的开口部图形识别所述掩膜板对位标记的中心所在的开口部图形。
  13. 如权利要求11所述的曝光控制***，其中，所述掩膜板对位标记包括一子图形，所述子图形为“田”字形，该“田”字形子图形中十字的交点为掩膜板对位标记的中心，且所述“田”字形子图形大小与开口部图形的大小一致；
    所述第三调整子模块还用于识别掩膜板对位标记的“田”字形子图形中十字的交点所对应的开口部图形，并将“田”字形子图形与所对应的开口部图形对准。
  14. 根据权利要求9-13中任一项所述的曝光控制***，其中所述控制模块在多次曝光的过程中，遮盖之前的曝光区域以避免对同一区域重复曝光。
  15. 一种曝光显影***，包括如权利要求9-14任一项所述的曝光控制***。
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CN112130269B (zh) * 2020-09-27 2022-12-30 浙江华疆科技有限公司 一种曝光机自动更换滤波片装置
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CN115236955B (zh) * 2022-09-23 2023-06-13 武汉光谷量子技术有限公司 一种获得对称图形的光刻方法

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