WO2016088146A1 - Antenna that produces energy day and night - Google Patents
Antenna that produces energy day and night Download PDFInfo
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- WO2016088146A1 WO2016088146A1 PCT/IT2015/000278 IT2015000278W WO2016088146A1 WO 2016088146 A1 WO2016088146 A1 WO 2016088146A1 IT 2015000278 W IT2015000278 W IT 2015000278W WO 2016088146 A1 WO2016088146 A1 WO 2016088146A1
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- 238000001228 spectrum Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 239000004698 Polyethylene Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 5
- -1 polyethylene Polymers 0.000 claims description 5
- 229920000573 polyethylene Polymers 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229920005372 Plexiglas® Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 claims 1
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Definitions
- TITLE "Antenna that produces energy day and night”
- Technical field H01L, H01L31/0232, H01L31/054
- All photovoltaic systems in use today are based on methods which consent to convert the sunlight photons into electrons and then into electricity via solar cells.
- Solar cells are formed by semiconductor materials and are assembled to form the so called photovoltaic modules which, in turn, are grouped to form the photovoltaic implants typically installed on houses roofs, lands, or similar. The panels must be installed respecting a precise orientation and a precise angulation.
- the electric current produced is proportional to the quantity of light captured and then is subject to weather conditions, indeed the current produced in cloudy days is much lower than the current delivered in a sunny day.
- the current photovoltaic systems produce no electricity at night and need to use batteries or accumulators which have been charged during the day.
- the current photovoltaic panel even the most technologically advanced, at its fullest potential can convert into electricity around 30% of the energy transmitted by solar spectrum, with a ratio of 1 Kw on a covered area of 8 square meters, and, considering the materials of which they are made, they must be dismantled and disposed of every 15/20 years. Thanks to the search report IO 53855 IT PS20140017 of 19 may 2015, the research presented in the following documents became known: a)a) D.K.
- KOTTER AL "Solar nantenna electromagnetic collectors", PROCEEDINGS OF ES2008, ENERGY SUSTAIN ABILITY 2008, 14 August 2008 (2008-08-14), Jacksonville, Florida USA; b) SACHIT GROVER ET AL: "Applicability of Metal/Insulator/Metal (MM) Diodes to Solar Rectennas", IEEE JOURNAL OF PHOTOVOLTAICS, I E E E , US, vol. 1 , no.
- KOTTER D K ET AL "Theory and manufacturing processes of solar nanoantenna electromagnetic collectors", JOURNAL OF SOLAR ENERGY ENGINEERING, ASME INTERNATIONAL, US, vol. 132, no. 1 , 1 February 2010 (2010-02-01), pages 1 1014-1 , XP009157838, ISSN: 0199-6231 , DOI: 10.1115/1.4000577.
- the system is formed by a set of structures aimed at capturing different wavelengths of the solar electromagnetic spectrum ranging from 100 nanometers to 700 nanometers, and in particular it comprises a set of nanoantennas (fig.3) and tunnel diodes.
- the main function of the nanoantennas is to enter into resonance with the wavelength established and absorb light photons at different visible and infrared frequencies (far, mid and near infrared) and absorb during the night the photons emitted from the ground and by any other thing capable of emitting infrared, and transform it into electricity.
- the nanoantennas generate plasmons, ie an oscillating wave of electrons traveling on the surface of the nanoantennas and thus increasing the amount of electricity produced by the system.
- the nanoantenna is an antenna characterized by particular square -spiral shaped dipoles (fig. l) with a calibration aimed at entering into resonance with the wavelength going from 120 nanometers to 170 nanometers, and it becomes increasingly less squared and more and more circular when the calibration is adapted for entering into resonance with the wavelength going from more than 170 nanometers to 700 nanometers; the length and thickness of segments comprising the dipoles, can be modified into measures suitable for the reception of the solar electromagnetic spectrum wavelength which goes from 100 nanometers to 700 nanometers.
- the nanoantenna is made of superconducting material and printed-lithographed through nanotechnologies on polyethylene, which besides acting as a container, it serves as dielectric and is extremely flexible, but it can be printed-lithographed even on plexiglas and glass, giving the possibility for a wide range of adaptability to different solutions for every desired use; gold is used in the current system, which guarantees maximum results in term of efficiency, duration and costs.
- the GAP of the nanoantenna center (fig.2) is realized with the same superconducting material used for the realization of the nanoantenna, preferably: in gold with a dielectric (aluminum oxide) placed in between.
- the nanoantennas are serially electrically connected between them (fig.3), so that to realize the system antenna.
- the system comprises tunnel diodes which are applied to the ends of the antenna (fig.5) in A and B points, before the connection points.
- the tunnel diode (fig.4) is formed by a double needle tip (d) electrode (b) opposed to a double rectangular tip (c) electrode (b) at a specially calibrated and precise distance (a); the needle tips must be precisely opposed to the rectangular ones.
- the tunnel diode is realized in superconducting material, preferably in gold on a support made of ceramic or other material compatible with the nanotechnologies used for nano lithography.
- the tunnel diode is used because currently there are neither diodes nor nano diodes for high frequency (THz). Its function is to rectify high frequency AC current into DC direct current; the electrons pass through the insulating space (fig.4) (a) between the electrodes tips and they can't come back anymore because during the few nanoseconds before the current is converted, the electron has already moved away from the tip, so it can't overcome the only crossing point, thereby converting AC in DC current.
- figure 1 is shown the shape of the antenna reproduced in scale
- figure 3 is shown the set of antennas forming a typical panel
- Nanoantennas printed-lithographed on a single panel 240 millions
- the power (W), the voltage (V) and the amperage (A) delivered by the system are a consequence of the type of connection, series or parallel, which applies to the panels forming the antenna and to the various alternating substrates in polyethylene or glass and they are dimensioned for capturing the various wavelengths ranging from 100 to 700 nanometers.
Abstract
Unlike current photovoltaic systems, which absorb light photons for freeing electrons, the function of this system is to enter into resonance, through antennas suitably dimensioned, with frequency bands and correspondent wavelengths of the solar electromagnetic spectrum in the UV-visible-Infrared and to convert the high frequency captured into direct current energy. The system can capture infrared even during the night from the ground and others, which has been previously absorbed during the day from sunlight. The system also exploit the plasmonic effect created on the surface of metals when they are irradiated from light. The wavelength captured is in the 120-170 nm band but it is possible to capture the overall useful band ranging from 100 to 700 nm by varying the shape and dimension of the antennas and creating substrates. The system has a broad angular range of reception and doesn't need a direct incidence of solar rays, as it can provide energy even in adverse weather conditions.
Description
DESCRIPTION
TITLE: "Antenna that produces energy day and night" Technical field: H01L, H01L31/0232, H01L31/054
BACKGROUND ART
All photovoltaic systems in use today are based on methods which consent to convert the sunlight photons into electrons and then into electricity via solar cells. Solar cells are formed by semiconductor materials and are assembled to form the so called photovoltaic modules which, in turn, are grouped to form the photovoltaic implants typically installed on houses roofs, lands, or similar. The panels must be installed respecting a precise orientation and a precise angulation. The electric current produced is proportional to the quantity of light captured and then is subject to weather conditions, indeed the current produced in cloudy days is much lower than the current delivered in a sunny day. The current photovoltaic systems produce no electricity at night and need to use batteries or accumulators which have been charged during the day. The current photovoltaic panel, even the most technologically advanced, at its fullest potential can convert into electricity around 30% of the energy transmitted by solar spectrum, with a ratio of 1 Kw on a covered area of 8 square meters, and, considering the materials of which they are made, they must be dismantled and disposed of every 15/20 years. Thanks to the search report IO 53855 IT PS20140017 of 19 may 2015, the research presented in the following documents became known: a)a) D.K. KOTTER AL: "Solar nantenna electromagnetic collectors", PROCEEDINGS OF ES2008, ENERGY SUSTAIN ABILITY 2008, 14 August 2008 (2008-08-14), Jacksonville, Florida USA; b) SACHIT GROVER ET AL: "Applicability of Metal/Insulator/Metal (MM) Diodes to Solar Rectennas", IEEE JOURNAL OF PHOTOVOLTAICS, I E E E , US, vol. 1 , no. 1 , 1 July 2011 (201 1 -07-01), pages 78-83, XP01 1387334, ISSN: 2156- 3381 , DOI: 10.1109/JPHOTOV.2011.2160489; c) KOTTER D K ET AL: "Theory and manufacturing processes of solar nanoantenna electromagnetic collectors", JOURNAL OF SOLAR ENERGY ENGINEERING, ASME INTERNATIONAL, US, vol. 132, no. 1 , 1 February 2010 (2010-02-01), pages 1 1014-1 , XP009157838, ISSN: 0199-6231 , DOI: 10.1115/1.4000577.
American researchers made a "research which explore a new and efficient approach for producing electricity from the abundant energy of the sun", coming to design, prototype and test a nantenna electromagnetic collector (NEC), attempting to reach a global solution to capture the solar electromagnetic spectrum by trying to catch and use all the wavelengths going from 100 nm to 1000 nm, broadband as well as radio frequencies, and transforming them into "low cost" direct current. But they had to admit themselves that their whole "work is an important step towards the final realization of a low-cost device that will collect and convert this radiation into electricity, which will lead to a broad-spectrum, high conversion efficiency, and a low-cost solution to integrate traditional PV". That means they had to admit that what they developed is still hard to implement and far from being low cost, therefore not yet ready for production on an industrial scale and accessible by a wide audience. They declare indeed "Further research is needed to improve the efficiency of the antenna rectification leading from terahertz currents to a usable DC signal" and again "More extensive research should to be done on energy conversion methods to obtain the overall efficiency of the electricity generation system", then concluding with "At the present moment this research is at an intermediate stage and may take years to be successfully placed in the market. The progress made by our research team have showed that some of the first obstacles of this alternative concept to PV have been overcome and this concept has the potential to become a disruptive and enabling technology. We encourage the scientific community to take into consideration this technology along with the others when they will contemplate the efforts and resources for solar energy". We omit the detailed list of specifics which differentiate our system from what has been done by american researchers, as it appears to be obvious from the same systems exposition, but we want to specify that instead of the future verbs used on the above statements by american researchers we use the present form.
While starting from the same theories, we pointed on the research of capturing and transforming into energy a wavelength range going from 120 nm to 170 nm infrared band (so called far infrared) and by using the current nanotechnologies, we have come to realize a simple, multifunctional, low cost system, already at production stage as exposed below.
DISCLOSURE OF INVENTION
The system is formed by a set of structures aimed at capturing different wavelengths of the solar electromagnetic spectrum ranging from 100 nanometers to 700 nanometers, and in particular it comprises a set of nanoantennas (fig.3) and tunnel diodes.
The main function of the nanoantennas is to enter into resonance with the wavelength established and absorb light photons at different visible and infrared frequencies (far, mid and near infrared) and absorb during the night the photons emitted from the ground and by any other thing capable of emitting infrared, and transform it into electricity.
In addition, but only during the day, when the surface of the nanoantennas is subjected to the light spectrum, the nanoantennas generate plasmons, ie an oscillating wave of electrons traveling on the surface of the nanoantennas and thus increasing the amount of electricity produced by the system.
The nanoantenna is an antenna characterized by particular square -spiral shaped dipoles (fig. l) with a calibration aimed at entering into resonance with the wavelength going from 120 nanometers to 170 nanometers, and it becomes increasingly less squared and more and more circular when the calibration is adapted for entering into resonance with the wavelength going from more than 170 nanometers to 700 nanometers; the length and thickness of segments comprising the dipoles, can be modified into measures suitable for the reception of the solar electromagnetic spectrum wavelength which goes from 100 nanometers to 700 nanometers.
The nanoantenna is made of superconducting material and printed-lithographed through nanotechnologies on polyethylene, which besides acting as a container, it serves as dielectric and is extremely flexible, but it can be printed-lithographed even on plexiglas and glass, giving the possibility for a wide range of adaptability to different solutions for every desired use; gold is used in the current system, which guarantees maximum results in term of efficiency, duration and costs. The GAP of the nanoantenna center (fig.2) is realized with the same superconducting material used for the realization of the nanoantenna, preferably: in gold with a dielectric
(aluminum oxide) placed in between.
The nanoantennas are serially electrically connected between them (fig.3), so that to realize the system antenna.
The system comprises tunnel diodes which are applied to the ends of the antenna (fig.5) in A and B points, before the connection points.
The tunnel diode (fig.4) is formed by a double needle tip (d) electrode (b) opposed to a double rectangular tip (c) electrode (b) at a specially calibrated and precise distance (a); the needle tips must be precisely opposed to the rectangular ones. The tunnel diode is realized in superconducting material, preferably in gold on a support made of ceramic or other material compatible with the nanotechnologies used for nano lithography.
The tunnel diode is used because currently there are neither diodes nor nano diodes for high frequency (THz). Its function is to rectify high frequency AC current into DC direct current; the electrons pass through the insulating space (fig.4) (a) between the electrodes tips and they can't come back anymore because during the few nanoseconds before the current is converted, the electron has already moved away from the tip, so it can't overcome the only crossing point, thereby converting AC in DC current.
BRIEF DESCRIPTION OF DRAWINGS
The drawings attached represent the overall system and its details which are determinants to its functioning, specifically:
In figure 1 is shown the shape of the antenna reproduced in scale;
In figure 2 is shown the detail of the antenna center;
In figure 3 is shown the set of antennas forming a typical panel;
In figure 4 is shown the detail of tunnel diode;
In figure 5 is shown a set of panels connected between them;
In figure 6 is shown the graph of solar spectrum;
BEST MODE FOR CARRYING OUT THE INVENTION
Dimensions and details of the system realized by us on a wavelength ranging from 120 nanometers to 170 nanometers, composed by: an antenna formed by 12 panels serially connected (fig.5) with the following dimensions and features:
Total size of polyethylene support: 70 cm x 80 cm
• Size of a single panel (fig.3): 15 cm x 19 cm
• Nanoantennas printed-lithographed on a single panel: 240 millions
• Overall circuit measurement: 57 cm x 60 cm
• Total nanoantennas printed-lithographed on the antenna: 2 billions 880 thousand
• (fig-5) A= input contact (connection point) - B= output/connection to the next panel through tunnel diode.
Measurements expressed in micrometers of the nanoantenna reproduced in scale (fig.l ), concerning segments and spacing: a=6 b=4 c=0,25 d=3, l e=l ,97 f=0,42 g=3,56 h=2,2 i=l,26 1=1 ,26 m=0,81 n=0,22 o=l,53 p=3,l q=4,3. Gold thickness: 300 nm.
In the realization of the first prototype for the part concerning the antennas only, the proceedings has been the following:
A 50 nm thick thermal substrate of silicon oxide (Si02) has been overlaid on a first polyethylene layer
Later a 10x10 cm matrix print of cellular antenna, necessary for creating a master stamp, has been created through NIL system (nano imprint lithography).
• Then a support has been created, on which stamping the structure on this covering.
• Later there has been the metallization with a vaporization "take-off' process. In the diodes realization we chose to realize MM diodes (Metal-Insulator-Metal) where a 4 nm thick aluminum oxide (A1203) is applied as dielectric insulator.
In case one wants to apply tunnel diodes, they are reproduced in scale (fig.4), expressed in nanometers: a=l,5 nm- expressed in micrometers: b=0,42 c=0,15 d=0,15.
The power (W), the voltage (V) and the amperage (A) delivered by the system are a consequence of the type of connection, series or parallel, which applies to the panels forming the antenna and to the various alternating substrates in polyethylene or glass and they are dimensioned for capturing the various wavelengths ranging from 100 to 700 nanometers.
INDUSTRIAL APPLICABILITY
The low cost of materials and the new nanotechnological facilities for production allow to realize numerous applications for common use. There could be the realization of independent night-time lighting (street lamps, illuminated signs, street signs, verandas etc.), greenhouses, camping tents, caravans, gazebos and also environmental photothermal, exploiting heat and light within an apartment or a factory or others. Thus one could produce energy at zero cost outside of any current monopoly. For industrial production, we believe the R2R Roll to Roll system very valid, in order to give flexibility to the system and to be low cost.
Claims
1 . A system comprising a planar antenna with the purpose of capturing, without the influence of direct solar light but with a wide angle of incidence, a specific band of the solar electromagnetic spectrum and most precisely radiations with wavelengths ranging from 120 nm to 170 nm, thus being able to capture frequencies in infrared band (so called far infrared) in order to convert them into direct electric current (DC) by application of Tunnel diodes, or more precisely MIM diodes (Metal/Insulator/Metal) .
2. A system, according to claim 1 , characterized by a system of interconnected nanoantennas, composed by particular square-spiral shaped dipoles (fig. 1 ) which are nano lithographed preferably in gold (3 micrometers thick), on a thermal support of silicon oxide (50 nm thick), placed on PET terephthalate polyethylene (0,10 millimeters thick), which covers both in front of and behind the entire structure, with a calibration aimed at entering into resonance with the wavelength going from 120 nanometers to 170 nanometers; the length and thickness of the segments composing the dipoles, are precisely calibrated on appropriate measurements for the reception of the solar electromagnetic spectrum wavelength which ranges from 120 nanometers to 170 nanometers; the center of the nanoantenna, which is reproduced in scale (fig 2), can be made, as previously stated, with a N (phosphorus) layer of silicon film suitably doped, or alternatively, in glass (prism), or as we prefer, a dielectric (AL203 aluminum oxide).
3. A system, according to claim 2, characterized by the GAP of the center of the nanoantenna (fig. 2) realized with the same superconducting material used for the realization of the nanoantenna, preferably: in gold with an overlaying N (phosphorus) silicon layer suitably doped, in gold with an overlaying glass layer (prism), in gold on dielectric (AL203 aluminum oxide), according to the solution of utilization desired.
4. A system, according to previous claims, comprising the nanoantenna realized in superconducting material, preferably in gold and printed -lithographed through nanotechnologies preferably on PET, which besides acting as a container, serves as dielectric and is extremely flexible, but can be printed-lithographed even on
Plexiglas and glass, giving the possibility for a wide range of adaptability to different solutions for every desired use.
5. A nanoantenna, according to previous claims, as reproduced in scale (fig. 1 ), preferably made out of gold, but that can be made even of other superconducting materials, specially calibrated for the reception of the solar electromagnetic spectrum wavelength which goes from 120 nanometers to 170 nanometers, preferably having the following measurements: in micrometers: a=6 b=4 c=0,25 d=3,l e=l,97 f=0,42 g=3,56 h=2,2 i=l ,26 1=1 ,26 m=0,81 n=0,22 o=l ,53 p=3, l q=4,3; the center of the nanoantenna reproduced in scale (fig 2), preferably having the following measurements: in micrometers: a=0,22 b=0,66 c=0,66 d=0,23; thickness of gold: 3 micrometers; thickness of the silicon or glass (prism) or dielectric: 2 micrometers.
6. A system, according to previous claims, characterized by nanoantennas interconnected to each other, thus forming a panel (fig. 3), which in turn connects to other panels either in series (fig.5), or in parallel, forming the appropriate antenna for the desired utilization according to the power (W), the voltage (V) and the amperage (A).
7. A system, according to previous claims, characterized by nanoantennas which can be overlapped with other nanoantennas calibrated on different wavelengths, thus allowing to expand the reception band and reach around 70% -80% of utilization of the energy delivered from the solar electromagnetic spectrum from 100 nanometers to 700 nanometers.
8. A system, according to previous claims, characterized by nanoantennas which can increase the electric current delivered by exploiting, in the daily hours, the plasmonic effect.
9. A system, according to previous claims,which for converting the high frequency alternating current (AC) into direct current (DC), applies Tunnel diodes or MIM diodes to the connection points A and B (fig.5), such diodes are already in use for other applications in order to compensate the lack of high frequency diodes on the market. The diode (fig.4) is characterized by a double needle tip (d) electrode (b) opposed to a double rectangular tip (c) electrode (b) at a specially calibrated and precise distance (a), the needle tips must be precisely opposed to the rectangular
ones; preferably, the diode has the following dimensions: expressed in nanometers: a=l ,5 for a Tunnel diode, or 4 nm for a MIM diode, expressed in micrometers b=0,42 c=0,15 d=0,15 (in both cases).
10. A Tunnel or MIM diode according to claims 1 and 9, as realized by us: a thermal substrate of silicon oxide (50 nm thick) on a first PET layer, then a layer of gold (300 nm thick) and later a dielectric layer of aluminum oxide (4 nm thick) fig.4 (distance between electrodes), then a layer of gold (the antenna) and finally another PET layer
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Cited By (1)
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CN111869082A (en) * | 2017-12-04 | 2020-10-30 | 格林阿里塞有限公司 | Converter for converting electromagnetic waves into continuous current |
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GB2484526A (en) * | 2010-10-14 | 2012-04-18 | Yi Huang | Rectenna array for solar energy conversion |
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GB2484526A (en) * | 2010-10-14 | 2012-04-18 | Yi Huang | Rectenna array for solar energy conversion |
WO2013112596A1 (en) * | 2012-01-23 | 2013-08-01 | Stc.Unm | Multi-source optimal reconfigurable energy harvester |
Non-Patent Citations (4)
Title |
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