WO2016080034A1 - 信号伝送絶縁デバイス及びパワー半導体モジュール - Google Patents
信号伝送絶縁デバイス及びパワー半導体モジュール Download PDFInfo
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/32—Insulating of coils, windings, or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3738—Semiconductor materials
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L1/00—Arrangements for detecting or preventing errors in the information received
- H04L1/0001—Systems modifying transmission characteristics according to link quality, e.g. power backoff
- H04L1/0006—Systems modifying transmission characteristics according to link quality, e.g. power backoff by adapting the transmission format
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/14—Mounting supporting structure in casing or on frame or rack
- H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
- H05K7/1427—Housings
- H05K7/1432—Housings specially adapted for power drive units or power converters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
- H01F2027/2809—Printed windings on stacked layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
Definitions
- the present invention relates to a signal transmission insulating device and a power semiconductor module including the same.
- a first coil is formed by forming a lower coil at the bottom of a recess provided in a semiconductor substrate, filling the recess with liquid polyimide resin, and curing it.
- a device is known in which an upper coil is formed thereon and the thickness of the first insulating film is adjusted to ensure a dielectric strength voltage between the lower coil and the upper coil (for example, Patent Documents). 1).
- a signal transmission insulating device having such a thin film transformer structure when a voltage is applied to the upper coil and the lower coil, electric field concentration occurs at the corners of the upper coil and the lower coil.
- a signal transmission insulating device having a transformer structure has a plurality of corners, and when the applied voltage increases, dielectric breakdown occurs from either corner of the upper coil or the lower coil.
- a second insulating film having a higher dielectric constant than the first insulating film is provided on the surface of the lower coil facing the upper coil, and the second insulating film is provided on the second insulating film.
- a second insulating film having a higher dielectric constant than the first insulating film is formed on the lower coil on the lower coil side between the lower coil and the upper coil. Since they are formed in contact with each other, the electric field in the second insulating film is reduced, and the electric field concentration at the corners of the lower coil in contact with the second insulating film can be reduced.
- the thickness of the insulating film must be increased more than necessary in consideration of electric field concentration at the corners of the upper coil.
- the thickness of the insulating film is increased more than necessary, the distance between the upper coil and the lower coil becomes longer, resulting in a problem that transmission characteristics such as signal transmission speed or transmission strength deteriorate. It was.
- the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a signal transmission insulating device capable of suppressing a decrease in signal transmission characteristics and improving a withstand voltage.
- the signal transmission isolation device is: The first coil, A second coil facing the first coil and constituting a transformer together with the first coil; A first insulating film provided between the first coil and the second coil and made of a first dielectric; The first coil is provided between the first insulating film and a surface in contact with the second main surface opposite to the first main surface facing the second coil, and fills and covers the first coil.
- a second dielectric having a resistivity lower than that of the first dielectric including a first film and a second film provided adjacent to the first film on a surface in contact with the second main surface
- a second insulating film comprising: A third film provided between a surface of the second coil that contacts the third main surface facing the first coil and the first insulating film, and the third film on the third main surface
- the first coil that is the lower coil is surrounded by the second insulating film that is formed so that the upper and lower surfaces are flat
- the second coil that is the upper coil is that the upper and lower surfaces are flat.
- the second insulating film and the third insulating film are formed so as to be surrounded by the formed third insulating film, and the resistivity of the second insulating film and the third insulating film is lower than the resistivity of the first insulating film, or the second insulating film and the third insulating film Since the dielectric constant of the film is higher than that of the first insulating film, the electric field in the second insulating film and the third insulating film is reduced.
- the electric field concentration at the corner of the lower coil surrounded by the second insulating film and the corner of the upper coil surrounded by the third insulating film can be reduced. Accordingly, since the withstand voltage can be improved without increasing the thickness of the first insulating film, it is possible to improve the withstand voltage and to suppress a decrease in signal transmission characteristics.
- FIG. 1 is a plan view showing the configuration of the signal transmission insulating device 1a according to the first embodiment of the present invention.
- FIG. 2 is a cross-sectional view showing the configuration of the signal transmission insulating device 1a according to the first exemplary embodiment of the present invention.
- FIG. 2 corresponds to a cross-sectional view taken along the line AA in FIG.
- the signal transmission insulating device 1 a includes a coil-shaped first coil 4 and a second coil 5 in which wiring is wound around a plurality of turns, and the first coil 4 and the second coil 5 face each other. Configure the transformer. In FIG. 1, the portion of the first coil 4 that overlaps the second coil 5 is not shown.
- the signal transmission insulating device 1a has a structure in which a so-called thin film transformer structure 9 is formed on a semiconductor substrate 2 made of Si or the like.
- the thin film transformer structure 9 includes a lower insulating film 15, a second insulating film 6a, a first coil 4, a second insulating film 6b, a first insulating film 3, a third insulating film 7a, a second coil 5, and a third insulating film. 7b and the upper insulating film 16.
- a lower insulating film 15 is formed on the semiconductor substrate 2, and the first coil 4, which is a lower coil, is surrounded by the second insulating films 6 a and 6 b on the lower insulating film 15. Is formed.
- the second coil 5 as the upper coil is formed on the second insulating film 6b so as to be surrounded by the third insulating films 7a and 7b via the first insulating film 3, and the third insulating film 7b.
- An upper insulating film 16 is formed thereon.
- the first insulating film 3, the lower insulating film 15, and the upper insulating film 16 are insulating films made of SiO 2 (silicon oxide) film, and the second insulating films 6a and 6b and the third insulating films 7a and 7b are SiO 2. It is an insulating film made of a SiN (silicon nitride) film having a lower resistivity.
- the first coil 4 and the second coil 5 are formed so as to face each other, and the second coil is formed in the same manner as the first coil 4 is formed so as to be surrounded by the second insulating films 6a and 6b.
- the coil 5 is also formed so as to be surrounded by the third insulating films 7a and 7b.
- the space between adjacent coil portions of the first coil 4 is filled with a first film 6b constituting the second insulating film (hereinafter simply referred to as the second insulating film 6b) to fill the second insulating film.
- a first film 6b constituting the second insulating film hereinafter simply referred to as the second insulating film 6b
- the second insulating film 6a By flatly forming the lower surface of the second film 6a (hereinafter simply referred to as the second insulating film 6a) and the upper surface of the second insulating film 6b, the electric field concentration at the corners of the first coil 4 is alleviated.
- the gap between adjacent coil portions of the second coil 5 is filled with a fourth film 7b (hereinafter simply referred to as a third insulating film 7b) constituting the third insulating film.
- the corners of the second coil 5 are formed.
- the effect of relaxing the electric field concentration can be enhanced.
- mechanical stress for example, tensile stress, compressive stress, etc.
- the flat formation described above is described regardless of whether the upper surface of the second insulating film 6b is a portion directly above the first coil 4 or not.
- Forming a plane substantially parallel to the lower surface of the second insulating film 6a over the entire surface without forming an uneven surface (hereinafter the same).
- the relationship between the upper surface of the third insulating film 7b and the lower surface of the third insulating film 7a is the same as the relationship between the upper surface of the second insulating film 6b and the lower surface of the second insulating film 6a (the same applies hereinafter).
- SiO 2 is used for the first insulating film 3, the lower insulating film 15, and the upper insulating film 16.
- the present invention is not limited to this, and the first insulating film 3, Other materials such as polyimide or parylene may be used for the lower insulating film 15 and the upper insulating film 16, and the same material or different materials may be used.
- SiN is used for the second insulating films 6a and 6b and the third insulating films 7a and 7b.
- the second insulating films 6a and 6b and the third insulating films 7a and 7b are used for the first insulating film 3. It is sufficient to use another insulating material having a resistivity lower than that of the dielectric, and the second insulating films 6a and 6b and the third insulating films 7a and 7b may be made of the same material or different materials. I do not care.
- FIG. 3 is a sectional view showing a manufacturing flow of the signal transmission insulating device 1a according to the first embodiment of the present invention.
- an insulating film 17 to be a lower insulating film 15 made of SiO 2 is formed on a semiconductor substrate 2 made of Si or the like by a CVD (Chemical Vapor Deposition) method.
- a second insulating film 6a is formed of SiN.
- a metal film 8a such as aluminum is formed on the second insulating film 6a by sputtering deposition.
- the first coil 4 is formed by etching the metal film 8a. Insulation made of SiN using a CVD method between the adjacent coil portions of the first coil 4 so as to surround the first coil 4 and on the surface facing the second coil 5 of the first coil 4. First, the film 6c is formed.
- the upper surface (see FIG. 3B) of the second insulating film 6c previously formed is polished and flattened by a CMP (Chemical Mechanical Polish) method.
- An insulating film 6b is formed, and a first insulating film 3 having a flat upper surface is formed thereon.
- preparations for forming the flat third insulating film 7a on the first insulating film 3 are completed. Thereafter, the third insulating film 7a made of SiN is formed on the first insulating film 3, and the third insulating film 7a is formed. A metal film 8b is formed on the film 7a by sputtering deposition.
- the second coil 5 is formed by etching the metal film 8b. Then, a third insulating film 7 b is formed so as to cover between the adjacent coil portions of the second coil 5 and the upper surface of the second coil 5. Specifically, the upper surface of the formed third insulating film 7b is polished by CMP to form the third insulating film 7b having a flat upper surface, and then the upper insulating film 16 is formed thereon.
- the signal transmission insulating device 1a shown in FIG. 2 can be obtained.
- the signal transmission insulating device 1a having the thin film transformer structure 9 when a potential difference is generated between the first coil 4 and the second coil 5 due to the above configuration. Then, electric field concentration occurs at a plurality of corners of the first coil 4 and the second coil 5, but the resistance is higher than that of the first insulating film 3 so as to surround the corners of the first coil 4 and the second coil 5.
- the second insulating films 6a and 6b and the third insulating films 7a and 7b having a low rate are formed, and the second insulating films 6a and 6b and the third insulating films 7a and 7b having a lower resistivity than the first insulating film 3 are formed. The electric field inside is relaxed.
- the corner portions of the first coil 4 and the second coil 5 where the electric field concentration occurs are surrounded by the second insulating films 6a and 6b and the third insulating films 7a and 7b where the electric field is relaxed.
- Electric field concentration in the part is alleviated.
- the withstand voltage can be improved without increasing the length. Accordingly, it is possible to improve the withstand voltage and to suppress a decrease in transmission characteristics such as a signal transmission speed or transmission intensity.
- the signal transmission insulating device 1a has a resistivity higher than that of the dielectric used for the first insulating film 3 in the second insulating films 6a and 6b and the third insulating films 7a and 7b.
- the combination of the first insulating film 3, the second insulating films 6a and 6b, and the third insulating films 7a and 7b is not limited to the SiO 2 film and the SiN film, but the second insulating films 6a and 6b.
- dielectric materials such as SiO 2 , SiN, polyimide, parylene, etc., so that the dielectric used for the third insulating films 7 a and 7 b has a lower resistivity than the dielectric used for the first insulating film 3. It can be selected appropriately.
- the first coil 4 constituting the thin film transformer structure 9 is used.
- the function as a transformer is lost by electrically short-circuiting between adjacent coils of the second coil 5 or between adjacent coils of the second coil 5 via the second insulating films 6a and 6b or the third insulating films 7a and 7b. There is a risk that.
- the second insulating films 6a, 6b and the third insulating films 7a, 7b have a resistivity equal to or higher than a resistivity that is not electrically short-circuited between adjacent coils of the first coil 4 or between adjacent coils of the second coil 5.
- FIG. 4 shows operation waveforms of the signal transmission insulating device 1a according to the first exemplary embodiment.
- 4A shows an input rectangular wave electric signal
- FIG. 4B shows an output pulse electric signal.
- the vertical axis represents the voltage of each signal
- the horizontal axis represents time.
- the rectangular wave electric signal Vin is input to either the first coil 4 or the second coil 5, and the input rectangular wave electric signal Vin rises and falls.
- a pulse electric signal Vout having a frequency F is output to the other coil.
- the first coil 4 or the second coil 5 is output while the pulse electric signal Vout is output.
- the time constant ⁇ [sec] between adjacent coils needs to satisfy the formula (1).
- the time constant ⁇ is obtained by Equation (2) using the resistivity ⁇ [ ⁇ m], the relative dielectric constant ⁇ r , and the vacuum dielectric constant ⁇ 0 [F / m].
- ⁇ ⁇ ⁇ ⁇ r ⁇ ⁇ 0
- the resistivity ⁇ of the second insulating films 6a and 6b and the third insulating films 7a and 7b may be selected so as to satisfy the expression (3).
- the second insulating film 6b and the third insulating film 7a are provided on the entire lower surface side and upper surface side of the first insulating film 3, deformation such as warpage of the first insulating film 3 is prevented. It can be effectively suppressed.
- each insulating film is formed so that the stresses generated by 6b and the third insulating film 7a cancel each other.
- stresses generated between the insulating films cancel each other, so that the warp deformation of the semiconductor substrate 2 or each insulating film can be reduced.
- the stress generated in each insulating film is determined by complex conditions such as the temperature at which the insulating film is formed, the gas flow rate, and the film thickness of the insulating film, so the stress is measured while the films are stacked.
- the metal film 8a and the metal film 8b are formed by the sputter deposition method.
- the present invention is not limited to this, and the metal film 8a and the metal film 8b are formed by using a thermal evaporation method or an electron beam evaporation method. It is good.
- the semiconductor substrate 2 is not limited to Si, but may be another semiconductor substrate such as SiC, and the metal film 8a and the metal film 8b are not limited to aluminum, and other materials such as Cu are used. be able to.
- the signal transmission insulating device 1a according to the first embodiment of the present invention can be used for a power semiconductor module such as IPM (Intelligent Power Module).
- IPM Intelligent Power Module
- FIG. 5 is a block diagram showing a motor driving apparatus 100 using the power semiconductor module 50 including the signal transmission insulating device 1a according to the first embodiment of the present invention.
- the motor driving device 100 includes a power semiconductor module 50 and a motor 30, and can drive the motor 30 by appropriately converting power output from a driving power source (not shown) by the power semiconductor module 50. .
- the power semiconductor module 50 includes a control unit 10 (also referred to as “control circuit”), a signal transmission insulating device 1a, a drive circuit 11, a power semiconductor device 21, and a sensor 22.
- the drive circuit 11 operates in accordance with a control signal 12 input from the control unit 10 via the signal transmission insulating device 1 a and outputs a drive signal 13 to the power semiconductor device 21.
- the power semiconductor device 21 is a semiconductor device such as an IGBT or a MOSFET, and performs a switching operation based on the drive signal 13.
- the sensor 22 measures the chip temperature of the power semiconductor device 21 or the flowing current, and outputs the sensor signal 14 to the drive circuit 11 and the control unit 10.
- the control unit 10 outputs a control signal 12 to the drive circuit 11 based on the sensor signal 14 or the like input from the sensor 22 via the signal transmission insulating device 1a, and controls the power semiconductor device 21. And the control part 10 controls operation
- the drive circuit 11 When the sensor 22 measures an overcurrent to the power semiconductor device 21 or when the chip temperature of the power semiconductor device 21 is measured to be higher than a predetermined value, the drive circuit 11 has the power semiconductor device 21. The output of the drive signal 13 to is stopped, and the power semiconductor device 21 is protected. By adopting such a configuration, the power semiconductor device 21 can be protected by the drive circuit 11 and the sensor 22 provided in the power semiconductor module 50. Therefore, the power semiconductor module 50 has a protection function. Functionalized.
- the control unit 10 since a signal with a relatively low voltage flows in the motor drive device 100 on the control unit 10 side, the control unit 10 has a low potential in the motor drive device 100.
- a relatively high voltage signal flows in the motor drive device 100, and thus the main circuit of the inverter circuit such as the drive circuit 11 or the power semiconductor device 21. Is at a high potential in the motor driving apparatus 100.
- a potential difference of several hundreds to thousands of volts is generated between the control unit 10 and the main circuit of the inverter circuit such as the drive circuit 11 or the power semiconductor device 21, and the drive circuit 11 or the power semiconductor is generated by this potential difference.
- the elements of the control unit 10 may be destroyed.
- the control unit 10 and the drive circuit 11 are transmitted.
- insulation can be maintained with the main circuit of the inverter circuit such as the power semiconductor device 21 and the sensor signal 14 or the control signal 12 can be transmitted.
- the signal transmission insulating device 1a can improve the withstand voltage and suppress the deterioration of signal transmission characteristics, when the predetermined withstand voltage is set, the signal transmission insulating device 1a
- the transmission characteristics such as signal transmission speed or transmission intensity are higher than those of the signal transmission insulation device. Therefore, by applying the signal transmission insulating device 1a according to the first embodiment to the power semiconductor module 50, the insulation between the control unit 10 and the main circuit of the inverter circuit such as the drive circuit 11 or the power semiconductor device 21 is provided. While maintaining, the transmission characteristic of the control signal 12 or the sensor signal 14 can be improved. And since the control delay etc. are reduced by the improvement of the transmission characteristic, the power semiconductor device 21 can be operated at higher speed. As a result, the power semiconductor module 50 becomes a power semiconductor module capable of high-speed response without impairing safety against dielectric breakdown. That is, the power semiconductor module has high quality and high safety.
- the power semiconductor module 50 having the protection function is provided by providing the sensor 22 in the power semiconductor module 50.
- the present invention is not limited to this.
- a power semiconductor module which does not have may be used. Even in such a case, the power semiconductor module can be provided with the signal transmission insulating device 1a to insulate the drive circuit from the control unit and improve the transmission characteristics of the control signal 12 and the like, and can operate at high speed. It becomes.
- FIG. The configuration of the present invention is not limited to the configuration of the signal transmission insulating device 1a according to the first embodiment, and may be other configurations.
- the semiconductor substrate 2 is conductive and the first coil 4 and the semiconductor substrate 2 are grounded, the occurrence of electric field concentration at the corner of the first coil 4 facing the semiconductor substrate 2 can be suppressed.
- the configuration of the second insulating film 6a provided on the lower side of the first coil 4 can be omitted, the number of manufacturing steps can be reduced, and the production cost can be reduced. Therefore, a configuration different from the signal transmission insulating device 1a according to the first embodiment will be described.
- the second insulating film portion different from that of the first embodiment of the present invention will be described, and description of other portions that are the same or corresponding will be omitted.
- FIG. 6 is a cross-sectional view showing the configuration of the signal transmission insulating device 1b according to the second exemplary embodiment of the present invention.
- the same reference numerals as those in FIG. 2 denote the same or corresponding components, and the description thereof is omitted.
- the signal transmission insulating device 1b according to the second embodiment is different from the signal transmission insulating device 1a according to the first embodiment in that the portion of the second insulating film 6a is omitted.
- the first coil 4 is disposed on the lower insulating film 15, and the second insulating film 6 b is disposed between adjacent coil portions so as to surround a corner of the first coil 4 facing the second coil 5. And on the surface of the first coil 4 facing the second coil 5.
- the space between adjacent coil portions of the first coil 4 is filled with the second insulating film 6b, and the upper surface of the second insulating film 6b is formed flat, whereby the electric field at the corner of the first coil 4 is formed.
- the effect of relaxing the concentration can be enhanced, and the space between adjacent coil portions of the second coil 5 is filled with the third insulating film 7b so that the lower surface of the third insulating film 7a and the upper surface of the third insulating film 7b are covered. By forming it flat, the effect of relaxing the electric field concentration at the corner of the second coil 5 can be enhanced.
- the film stresses of the second insulating film 6b and the first insulating film 3, the third insulating film 7a and the first insulating film 3, and the third insulating film 7b and the upper insulating film 16 are formed.
- mechanical stress to each film generated due to the difference in thermal expansion coefficient can be dispersed, so that generation of cracks can be suppressed and insulation reliability can be improved.
- FIG. 7 is a sectional view showing a manufacturing flow of the signal transmission insulating device 1b according to the second exemplary embodiment of the present invention.
- a lower insulating film 15 is formed on the semiconductor substrate 2 made of Si or the like by a CVD method. Then, a metal film 8a such as aluminum is formed on the lower insulating film 15 by sputtering deposition.
- the first coil 4 is formed by etching the metal film 8a. And on the surface of the first coil 4 facing the second coil 5 between each adjacent coil portion of the first coil 4 so as to surround the corner of the first coil 4 facing the second coil 5. Then, the insulating film 6c to be the second insulating film 6b is formed by the CVD method.
- the upper surface of the second insulating film 6c is polished and flattened by CMP to form a second insulating film 6b, and the first insulating film 3 having a flat upper surface is formed thereon. Further, a third insulating film 7 a is formed on the first insulating film 3. Thereafter, a metal film 8b is formed on the third insulating film 7a by sputtering deposition.
- the second coil 5 is formed by etching the metal film 8b. Then, a third insulating film is formed between adjacent coil portions of the second coil 5 and on the upper surface of the second coil 5 so as to surround the second coil 5, and is polished by CMP to have a flat upper surface. A third insulating film 7b is formed, and an upper insulating film 16 is formed thereon.
- the signal transmission insulating device 1b having the thin film transformer structure 9 has the first structure when the potential difference is generated between the first coil 4 and the second coil 5 by the above configuration. Electric field concentration occurs at a plurality of corners of the coil 4 and the second coil 5, but the resistivity is lower than that of the first insulating film 3 so as to surround the corners of the first coil 4 and the second coil 5.
- the second insulating film 6b and the third insulating films 7a and 7b are formed, and the electric field inside the second insulating film 6b and the third insulating films 7a and 7b having a lower resistivity than the first insulating film 3 is relaxed.
- the semiconductor substrate 2 is conductive and the first coil 4 and the semiconductor substrate 2 are grounded, the electric field at the corner of the first coil 4 facing the semiconductor substrate 2 is also reduced. Therefore, the corner portions of the first coil 4 and the second coil 5 where the electric field concentration occurs are surrounded by the second insulating film 6b and the third insulating films 7a and 7b where the electric field is relaxed. Electric field concentration is reduced. As a result, since the electric field concentration on both the first coil 4 and the second coil 5 side is relaxed, the distance between the first coil 4 and the second coil 5 can be reduced without increasing the thickness of the insulating film. Since the withstand voltage can be improved without increasing the length, it is possible to improve the withstand voltage and to suppress a decrease in transmission characteristics such as a signal transmission speed or transmission intensity.
- the manufacturing of the second insulating film 6a is not necessary, so that the number of manufacturing steps can be reduced and the production cost can be reduced. can do.
- the signal transmission insulating device 1b according to the second embodiment to a power semiconductor module, a high-quality and highly safe power semiconductor module can be provided.
- FIG. 8 is a cross-sectional view showing the configuration of the signal transmission insulating device 1c according to the third embodiment of the present invention.
- the same reference numerals as those in FIG. 2 denote the same or corresponding configurations.
- the present embodiment differs from the first embodiment in the configuration of the second insulating films 6a and 6b and the third insulating films 7a and 7b, only the differences will be described below. Description of other configurations is omitted.
- the signal transmission insulating device 1c has a dielectric constant higher than that of the dielectric used for the first insulating film 3 in the second insulating films 6a and 6b and the third insulating films 7a and 7b.
- a high dielectric is used.
- SiO 2 film is used as the first insulating film 3
- SiN films can be used as the second insulating films 6a and 6b and the third insulating films 7a and 7b.
- the combination of the first insulating film 3, the second insulating films 6a and 6b, and the third insulating films 7a and 7b is not limited to the SiO 2 film and the SiN film, but the second insulating films 6a and 6b and the third insulating film.
- the dielectric used for 7a and 7b may be appropriately selected from dielectrics such as SiO 2 , SiN, polyimide, and parylene so that the dielectric constant used in the first insulating film 3 is higher than that of the dielectric used for the first insulating film 3. it can.
- the method for manufacturing the signal transmission insulating device 1c according to the third embodiment of the present invention is the same as the method for manufacturing the signal transmission insulating device 1a according to the first embodiment.
- the signal transmission insulating device 1c having the thin film transformer structure 9 has the first structure when the potential difference is generated between the first coil 4 and the second coil 5 by the above configuration. Electric field concentration occurs at a plurality of corners of the coil 4 and the second coil 5, but the dielectric constant is higher than that of the first insulating film 3 so as to surround the corners of the first coil 4 and the second coil 5.
- the second insulating films 6a and 6b and the third insulating films 7a and 7b are formed. Inside the second insulating films 6a and 6b and the third insulating films 7a and 7b having a dielectric constant higher than that of the first insulating film 3. The electric field is relaxed.
- the corner portions of the first coil 4 and the second coil 5 where the electric field concentration occurs are surrounded by the second insulating films 6a and 6b and the third insulating films 7a and 7b where the electric field is relaxed.
- Electric field concentration in the part is alleviated.
- the distance between the first coil 4 and the second coil 5 side is relaxed, the distance between the first coil 4 and the second coil 5 can be reduced without increasing the thickness of the insulating film. Since the withstand voltage can be improved without increasing the length, it is possible to improve the withstand voltage and to suppress a decrease in transmission characteristics such as a signal transmission speed or transmission intensity.
- the signal transmission insulating device 1c according to the third embodiment to a power semiconductor module, it is possible to provide a high-quality and highly safe power semiconductor module.
- FIG. 9 is sectional drawing which shows the structure of the signal transmission insulation device 1d concerning Embodiment 4 of this invention.
- the same reference numerals as those in FIG. 6 denote the same or corresponding configurations.
- this embodiment is different from the second embodiment in the configuration of the second insulating film 6b and the third insulating films 7a and 7b. Therefore, only the difference will be described below, and the other A description of the configuration is omitted.
- the signal transmission insulating device 1d has a dielectric constant higher than that of the dielectric used for the first insulating film 3 in the second insulating film 6b and the third insulating films 7a and 7b.
- the body For example, when a SiO 2 film is used as the first insulating film 3, SiN films can be used as the second insulating film 6b and the third insulating films 7a and 7b.
- the combination of the first insulating film 3, the second insulating film 6b, and the third insulating films 7a and 7b is not limited to the SiO 2 film and the SiN film, but the second insulating film 6b and the third insulating films 7a and 7b. It is possible to select appropriately from dielectrics such as SiO 2 , SiN, polyimide, and parylene so that the dielectric used in the above is a combination having a higher dielectric constant than the dielectric used in the first insulating film 3.
- the manufacturing method of the signal transmission insulating device 1d according to the fourth embodiment of the present invention is the same as the manufacturing method of the signal transmission insulating device 1b according to the second embodiment.
- the signal transmission insulating device 1d having the thin film transformer structure 9 has the first configuration. Electric field concentration occurs at a plurality of corners of the coil 4 and the second coil 5, but the dielectric constant is higher than that of the first insulating film 3 so as to surround the corners of the first coil 4 and the second coil 5.
- the second insulating film 6b and the third insulating films 7a and 7b are formed, and the electric field inside the second insulating film 6b and the third insulating films 7a and 7b having a dielectric constant higher than that of the first insulating film 3 is relaxed.
- the semiconductor substrate 2 is conductive and the first coil 4 and the semiconductor substrate 2 are grounded, the electric field at the corner of the first coil 4 facing the semiconductor substrate 2 is also reduced. Therefore, the corner portions of the first coil 4 and the second coil 5 where the electric field concentration occurs are surrounded by the second insulating film 6b and the third insulating films 7a and 7b where the electric field is relaxed. Electric field concentration is reduced. As a result, since the electric field concentration on both the first coil 4 and the second coil 5 side is relaxed, the distance between the first coil 4 and the second coil 5 can be reduced without increasing the thickness of the insulating film. Since the withstand voltage can be improved without increasing the length, it is possible to improve the withstand voltage and to suppress a decrease in transmission characteristics such as a signal transmission speed or transmission intensity.
- the second insulating film 6a is not required to be manufactured as compared with the signal transmission insulating devices 1a and 1c according to the first or third embodiment, the number of manufacturing steps can be reduced and the production cost can be reduced. Can be reduced.
- the signal transmission insulating device 1d according to the fourth embodiment to a power semiconductor module, a high-quality and highly safe power semiconductor module can be provided.
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Abstract
Description
第1コイル、
前記第1コイルに対向し前記第1コイルとともにトランスを構成する第2コイル、
前記第1コイルと前記第2コイルとが対向する間に設けられ、第1の誘電体からなる第1絶縁膜、
前記第1コイルの前記第2コイルに対向する第一主面とは反対側の第二主面に接する面と前記第1絶縁膜との間に設けられ、前記第1コイルを埋めて覆う第1の膜、および前記第二主面に接する面で前記第1の膜に隣接して設けられた第2の膜を含み、前記第1の誘電体よりも抵抗率が低い第2の誘電体からなる第2絶縁膜、
前記第2コイルの前記第1コイルに対向する第三主面に接する面と前記第1絶縁膜との間に設けられた第3の膜、および当該第3の膜に前記第三主面に接する面で前記第3の膜に隣接し、前記第2コイルを埋めて覆う第4の膜を含み、前記第1の誘電体よりも抵抗率が低い第3の誘電体からなる第3絶縁膜、
を備えたものである。
まず、本発明の実施の形態1にかかる信号伝送絶縁デバイスの構成について説明する。図1は、本発明の実施の形態1にかかる信号伝送絶縁デバイス1aの構成を示す平面図である。図2は、本発明の実施の形態1にかかる信号伝送絶縁デバイス1aの構成を示す断面図である。なお、図2は、図1におけるA-A断面図に相当するものである。
τ>1/F (1)
τ=ρ×εr×ε0 (2)
ρ>1/(F×εr×ε0) (3)
本発明の構成は、実施の形態1にかかる信号伝送絶縁デバイス1aの構成に限定されるものでなく、他の構成とすることもできる。特に、半導体基板2が導電性で、かつ第1コイル4と半導体基板2が接地されている場合、第1コイル4の半導体基板2に面した角部での電界集中の発生が抑えられるため、第1コイル4の下側に設ける第2絶縁膜6aの構成を省略して製造時の工程数を削減することができ、生産コストを低減することができる。そこで、実施の形態1にかかる信号伝送絶縁デバイス1aとは異なる構成について説明する。なお、以下において、本発明の実施の形態1と相違する第2絶縁膜の部分について説明し、同一または対応する他の部分についての説明は省略する。
実施の形態3にかかる信号伝送絶縁デバイス1cの構成について説明する。図8は、本発明の実施の形態3にかかる信号伝送絶縁デバイス1cの構成を示す断面図である。図8において、図2と同じ符号を付けたものは、同一または対応する構成を示している。また、本実施の形態は、実施の形態1と比較して、第2絶縁膜6a、6b、第3絶縁膜7a、7bの構成で相違するため、以下においては当該相違点についてのみ説明し、他の構成については説明を省略する。
実施の形態4にかかる信号伝送絶縁デバイス1dの構成について説明する。図9は、本発明の実施の形態4にかかる信号伝送絶縁デバイス1dの構成を示す断面図である。図9において、図6と同じ符号を付けたものは、同一または対応する構成を示している。また、本実施の形態は、実施の形態2と比較して、第2絶縁膜6b、第3絶縁膜7a、7bの構成で相違するため、以下においては当該相違点についてのみ説明し、他の構成については説明を省略する。
Claims (11)
- 第1コイル、
前記第1コイルに対向し前記第1コイルとともにトランスを構成する第2コイル、
前記第1コイルと前記第2コイルとが対向する間に設けられ、第1の誘電体からなる第1絶縁膜、
前記第1コイルの前記第2コイルに対向する第一主面とは反対側の第二主面に接する面と前記第1絶縁膜との間に設けられ、前記第1コイルを埋めて覆う第1の膜、および前記第二主面に接する面で前記第1の膜に隣接して設けられた第2の膜を含み、前記第1の誘電体よりも抵抗率が低い第2の誘電体からなる第2絶縁膜、
前記第2コイルの前記第1コイルに対向する第三主面に接する面と前記第1絶縁膜との間に設けられた第3の膜、および当該第3の膜に前記第三主面に接する面で前記第3の膜に隣接し、前記第2コイルを埋めて覆う第4の膜を含み、前記第1の誘電体よりも抵抗率が低い第3の誘電体からなる第3絶縁膜、
を備えたことを特徴とする信号伝送絶縁デバイス。 - 第1コイル、
前記第1コイルに対向し前記第1コイルとともにトランスを構成する第2コイル、
前記第1コイルと前記第2コイルとが対向する間に設けられ、第1の誘電体からなる第1絶縁膜、
前記第1コイルの前記第2コイルに対向する第一主面とは反対側の第二主面に接する面と前記第1絶縁膜との間に設けられ、前記第1コイルを埋めて覆う第1の膜、および前記第二主面に接する面で前記第1の膜に隣接して設けられた第2の膜を含み、前記第1の誘電体よりも誘電率が高い第2の誘電体からなる第2絶縁膜、
前記第2コイルの前記第1コイルに対向する第三主面に接する面と前記第1絶縁膜との間に設けられた第3の膜、および当該第3の膜に前記第三主面に接する面で前記第3の膜に隣接し、前記第2コイルを埋めて覆う第4の膜を含み、前記第1の誘電体よりも誘電率が高い第3の誘電体からなる第3絶縁膜、
を備えたことを特徴とする信号伝送絶縁デバイス。 - 第1コイル、
前記第1コイルに対向し前記第1コイルとともにトランスを構成する第2コイル、
前記第1コイルと前記第2コイルとが対向する間に設けられ、第1の誘電体からなる第1絶縁膜、
前記第1コイルの前記第2コイルに対向する第一主面とは反対側の第二主面に接する面と前記第1絶縁膜との間に設けられ、前記第1コイルを埋めて覆う第1の膜、および前記第二主面に接する面で前記第1の膜に隣接して設けられた第2の膜を含み、前記第1の誘電体よりも抵抗率が低い第2の誘電体からなる第2絶縁膜、
前記第2コイルの前記第1コイルに対向する第三主面に接する面と前記第1絶縁膜との間に設けられた第3の膜、および当該第3の膜に前記第三主面に接する面で前記第3の膜に隣接し、前記第2コイルを埋めて覆う第4の膜を含み、前記第1の誘電体よりも抵抗率が低い第3の誘電体からなる第3絶縁膜、
を備え、
前記第1絶縁膜に隣接する前記第1の膜の前記第1絶縁膜側の面を平坦に形成するとともに、前記第4の膜の、前記第3の膜に接する面とは反対側の面を平坦に形成したことを特徴とする信号伝送絶縁デバイス。 - 第1コイル、
前記第1コイルに対向し前記第1コイルとともにトランスを構成する第2コイル、
前記第1コイルと前記第2コイルとが対向する間に設けられ、第1の誘電体からなる第1絶縁膜、
前記第1コイルの前記第2コイルに対向する第一主面とは反対側の第二主面に接する面と前記第1絶縁膜との間に設けられ、前記第1コイルを埋めて覆う第1の膜、および前記第二主面に接する面で前記第1の膜に隣接して設けられた第2の膜を含み、前記第1の誘電体よりも誘電率が高い第2の誘電体からなる第2絶縁膜、
前記第2コイルの前記第1コイルに対向する第三主面に接する面と前記第1絶縁膜との間に設けられた第3の膜、および当該第3の膜に前記第三主面に接する面で前記第3の膜に隣接し、前記第2コイルを埋めて覆う第4の膜を含み、前記第1の誘電体よりも誘電率が高い第3の誘電体からなる第3絶縁膜、
を備え、
前記第1絶縁膜に隣接する前記第1の膜の前記第1絶縁膜側の面を平坦に形成するとともに、前記第4の膜の、前記第3の膜に接する面とは反対側の面を平坦に形成したことを特徴とする信号伝送絶縁デバイス。 - 前記第1コイルの前記第2コイルに対して第一主面とは反対側の第二主面に接する部分に設けられた前記第2の膜が省略されている、
ことを特徴とする請求項1から4のいずれか1項に記載の信号伝送絶縁デバイス。 - 圧縮応力が生じた前記第1絶縁膜と、
引張応力が生じた前記第2絶縁膜及び前記第3絶縁膜と、
を備えたことを特徴とする請求項1から5のいずれか1項に記載の信号伝送絶縁デバイス。 - 引張応力が生じた前記第1絶縁膜と、
圧縮応力が生じた前記第2絶縁膜及び前記第3絶縁膜と、
を備えたことを特徴とする請求項1から5のいずれか1項に記載の信号伝送絶縁デバイス。 - 前記第1の誘電体はSiO2である、
ことを特徴とする請求項1から7のいずれか1項に記載の信号伝送絶縁デバイス。 - 前記第2の誘電体はSiNである、
ことを特徴とする請求項1から8のいずれか1項に記載の信号伝送絶縁デバイス。 - 前記第3の誘電体はSiNである、
ことを特徴とする請求項1から9のいずれか1項に記載の信号伝送絶縁デバイス。 - パワー半導体装置、
前記パワー半導体装置を駆動する駆動回路、
前記駆動回路と前記パワー半導体装置を制御する制御回路との間の信号を伝送するとともに、前記駆動回路と前記制御回路とを絶縁する請求項1から10のいずれか1項に記載の信号伝送絶縁デバイス、
を備えたことを特徴とするパワー半導体モジュール。
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