WO2016067390A1 - Heat-dissipating structure - Google Patents

Heat-dissipating structure Download PDF

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Publication number
WO2016067390A1
WO2016067390A1 PCT/JP2014/078771 JP2014078771W WO2016067390A1 WO 2016067390 A1 WO2016067390 A1 WO 2016067390A1 JP 2014078771 W JP2014078771 W JP 2014078771W WO 2016067390 A1 WO2016067390 A1 WO 2016067390A1
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WO
WIPO (PCT)
Prior art keywords
heat
heat dissipation
generating component
substrate
semiconductor module
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PCT/JP2014/078771
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French (fr)
Japanese (ja)
Inventor
康亮 池田
雄司 森永
理 松嵜
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新電元工業株式会社
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Priority to PCT/JP2014/078771 priority Critical patent/WO2016067390A1/en
Priority to JP2015554912A priority patent/JP6091035B2/en
Publication of WO2016067390A1 publication Critical patent/WO2016067390A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a heat dissipation structure.
  • a heat dissipation structure using a heat sink is known as a heat dissipation structure for a heat generating component such as an electronic component (see Patent Document 1).
  • a heat sink including a base portion and a plurality of heat dissipating fins standing on the first surface of the base portion is used. All the heat generating components to be cooled are arranged on the second surface opposite to the first surface of the base portion. The heat of the heat generating component is transmitted to the heat radiating fin via the base portion, and is radiated to the outside from the heat radiating fin.
  • An object of one embodiment of the present invention is to provide a heat dissipation structure having high heat dissipation.
  • a heat dissipation structure includes a heat sink having a base portion and a plurality of heat dissipating fins erected on the first surface of the base portion, and on the first surface side of the base portion.
  • a first heat-generating component that is in contact with at least one of the plurality of heat dissipating fins, and is joined to a second surface opposite to the first surface of the base portion;
  • a circuit board electrically connected to the one heat generating component.
  • the first heat-generating component can be disposed on the first surface side of the base portion and brought into contact with the heat-radiating fins to efficiently dissipate heat. can get.
  • FIG. 1 It is sectional drawing which shows an example of the thermal radiation structure which concerns on embodiment of this invention. It is the top view which looked at the thermal radiation structure shown in FIG. 1 from the 1st surface side. It is sectional drawing which expands and shows the semiconductor module shown in FIG. It is a cross-sectional schematic diagram of the semiconductor module provided with mold resin. It is a cross-sectional schematic diagram of a semiconductor module provided with an insulating film. It is a top view which shows the example of arrangement
  • the thermal radiation structure 1 which is one Embodiment of this invention is demonstrated.
  • the heat dissipation structure 1 includes a heat sink 2, a plurality of semiconductor modules (first heat generating components) 3, a circuit board 4, and a plurality of electronic components (second heat generating components) 5.
  • the heat generated by the semiconductor module 3 and the electronic component 5 is radiated by the heat sink 2.
  • the heat sink 2 is made of a material having high thermal conductivity such as Cu or Al.
  • the heat sink 2 has a base portion 6 and a plurality of heat radiation fins 7A and 7B.
  • the base part 6 is formed in a rectangular flat plate shape.
  • Each of the heat radiating fins 7A and 7B is formed in a rectangular flat plate shape, and is erected vertically with respect to the first surface 6a of the base portion 6.
  • the plurality of radiating fins 7A and 7B are located between the both ends of the base portion 6 in the longitudinal direction (left-right direction in FIG. 2) and the both ends thereof, and are arranged side by side with a space therebetween. ing.
  • Each of the radiating fins 7A and 7B is erected between both end portions of the base portion 6 in the short direction (vertical direction in FIG. 2).
  • two radiating fins 7A are provided at positions along both longitudinal ends of the base portion 6, and two radiating fins 7B are provided between the two radiating fins 7A.
  • the semiconductor module 3 is arrange
  • the heat sink 2 it is not necessarily limited to the thing of this embodiment, It is possible to implement by changing suitably the number, dimension, etc. of each radiation fin 7A, 7B.
  • Insertion grooves 8 are provided in the heat radiation fins 7B.
  • the insertion groove 8 holds the semiconductor module 3 so that the semiconductor module 3 can be inserted from an insertion port 8a provided on the front end side of the heat radiation fin 7B.
  • the insertion groove 8 is cut out at a depth sufficient to insert the semiconductor module 3 perpendicularly to the first surface 6a with a certain width from the front end side of the radiating fin 7B.
  • the radiating fin 7B is divided into two fin portions 7a and 7b by the insertion groove 8.
  • the heat radiating fin 7B is provided with a lid member 9 (not shown in FIG. 2) that closes the insertion port 8a.
  • the lid member 9 is attached so as to close the insertion port 8 a in a state where the semiconductor module 3 is inserted into the insertion groove 8.
  • the attachment structure of the cover material 9 it is not necessarily limited to such a structure, It is set as the structure where the cover material 9 was attached so that the radiation fin 7 may be inserted
  • the semiconductor module 3 includes a first substrate 10, a first semiconductor element 11, a connector 12, a second semiconductor element 13, and a second substrate 14. , And are laminated in order.
  • the first and second substrates 10 and 14 are ceramic substrates, and ceramic plates (insulating plates) 15 and 16, and Cu layers (conductive layers) 17 provided on both surfaces of the ceramic plates 15 and 16, 18. Further, the Cu layers 17 and 18 on the side of the first substrate 10 and the second substrate 14 facing each other form circuit patterns 17 a and 18 a of the semiconductor module 3.
  • the first and second substrates 10 and 14 are not limited to ceramic substrates but may be aluminum substrates, for example.
  • the aluminum substrate has a structure in which a Cu layer is provided on both surfaces of an aluminum plate via an insulating layer.
  • the first and second semiconductor elements 11 and 13 are power devices such as power diodes and power transistors that generate a relatively large amount of heat during operation.
  • the first semiconductor element 11 and the second semiconductor element 13 are respectively mounted on the mutually opposing surface sides of the first substrate 10 and the second substrate 14, so that the circuit patterns 17 a and 18 a Electrically connected.
  • the connector 12 is made of a conductive material such as Cu, for example.
  • the connector 12 has a first connection part 12a, a second connection part 12b, and a connecting part 12c.
  • the 1st connection part 12a is a part which electrically connects the 1st semiconductor element 11 and the 2nd semiconductor element 13, and the 2nd connection part 12b is electrically connected with one circuit pattern 17a.
  • the connecting portion 12c is a portion that connects the first connecting portion 12a and the second connecting portion 12b.
  • the first connection portion 12a is formed in a columnar shape with a thickness sufficient to maintain the distance between the first substrate 10 and the second substrate 14. Both end portions of the first connection portion 12a are joined to the first semiconductor element 11 and the second semiconductor element 13 through a conductive adhesive (not shown) such as solder.
  • the second connecting portion 12b is formed in a plate shape and joined to one circuit pattern 17a via a conductive adhesive (not shown) such as solder.
  • the connecting portion 12c is formed in a long plate shape with a length sufficient to connect the first connecting portion 12a and the second connecting portion 12b.
  • One end side of the connecting portion 12c is integrally connected to the side surface of the first connecting portion 12a.
  • the other end side of the connecting portion 12c is bent toward the second connecting portion 12b and connected integrally with the second connecting portion 12b.
  • a spacer 19 is disposed between the first substrate 10 and the second substrate 14.
  • the spacer 19 holds the distance between the first substrate 10 and the second substrate 14 together with the first connection portion 12a.
  • the spacer 19 is disposed as a circuit component of the semiconductor module 3 in a state of being sandwiched between the circuit patterns 17a and 18a. Examples of the circuit component include a wiring part, a resistor, and a capacitor.
  • the circuit board 4 and the plurality of electronic components 5 shown in FIGS. 1 and 2 constitute a control unit 30 that controls the driving of the semiconductor module 3.
  • the circuit board 4 is joined to the second surface 6b opposite to the first surface 6a of the heat sink 2 (base portion 6).
  • the plurality of electronic components 5 are mounted on the circuit board 4.
  • Each electronic component 5 is a heat generating component that generates less heat than each semiconductor module 3.
  • the connector 20 includes first insertion ports 22a and 22b into which the first connection terminals 21a and 21b on the semiconductor module 3 side are inserted, and a second insertion into which the second connection terminal 23 on the electronic component 5 side is inserted. And a mouth 24.
  • the first connection terminals 21a and 21b on the semiconductor module 3 side are connected to the circuit patterns 17a and 18a, respectively.
  • the heat sink 2 is provided with an insertion hole 25 for holding the connector 20 so that the connector 20 can be inserted.
  • the heat sink 2 is provided with first through holes 26a and 26b that allow the first connection terminals 21a and 21b on the semiconductor module 3 side to pass therethrough.
  • the first through holes 26 a and 26 b are formed from the bottom surface of the insertion groove 8 toward the insertion hole 25.
  • the heat sink 2 and the circuit board 4 are provided with a second through hole 27 through which the second connection terminal 23 on the electronic component 5 side passes.
  • the second through hole 27 is formed from the surface on which the electronic component 5 of the circuit board 4 is mounted toward the insertion hole 25.
  • the first connection terminals 21 a and 21 b and the second connection terminal 23 are electrically insulated from the first through holes 26 a and 26 b and the second through hole 27.
  • the semiconductor module 3 is in contact with the heat dissipation fins 7 ⁇ / b> B in a state where the semiconductor module 3 is inserted into the insertion groove 8.
  • the heat generated by the semiconductor module 3 is transmitted from the first and second substrates 10 and 14 in contact with the inner wall surface of the insertion groove 8, that is, the fin portions 7a and 7b, to the radiation fins 7B, and is radiated to the outside.
  • the heat generated by the plurality of electronic components 5 is transferred from the circuit board 4 to the heat radiation fins 7A and 7B via the base portion 6, and is radiated to the outside.
  • the heat generated by the semiconductor module 3 is directly transmitted to the heat radiating fins 7 ⁇ / b> B without passing through the base portion 6, so that the heat transmission path is shortened and the heat dissipation performance of the semiconductor module 3 is improved.
  • the semiconductor module 3 is disposed on the second surface 6b of the base portion 6 as in the related art by disposing the semiconductor module 3 in contact with the heat dissipation fins 7B. Compared with the case where it does, it is possible to obtain high heat dissipation.
  • the semiconductor module 3 is arranged on the second surface 6b of the base portion 6 as in the prior art by arranging the semiconductor module 3 in a state inserted into the insertion groove 8. Compared to, it is possible to downsize. Furthermore, by bringing the first and second substrates 10 and 14 of the semiconductor module 3 into contact with the fin portions 7a and 7b, it is possible to efficiently dissipate heat from the semiconductor module 3.
  • an insulating film 29 that covers the mutually opposing surfaces of the first substrate 10 and the second substrate 14 is provided instead of the mold resin 28.
  • an insulating material having high thermal conductivity such as ceramic is used.
  • the heat dissipation structure 1 of the present embodiment it is possible to ensure insulation and protect particles by inserting the semiconductor module 3 provided with such an insulating film 29 into the insertion groove 8. Furthermore, when the insulating film 29 is provided, not only the heat dissipation from the semiconductor module 3 is improved by reducing the thickness of the insulating film 29, but also the generation of cracks due to the difference in linear expansion coefficient can be suppressed. Moreover, since the process for sealing with the mold resin 28 can be omitted, the manufacturing process can be simplified.
  • this invention is not necessarily limited to the thing of the said embodiment, A various change can be added in the range which does not deviate from the meaning of this invention.
  • the present invention is not necessarily limited to the configuration in which the semiconductor module 3 is inserted into the insertion groove 8 described above, and the semiconductor module 3 radiates at least one of the plurality of heat radiation fins 7A and 7B. What is necessary is just the structure which touches fin 7A (7B).
  • the semiconductor module 3 is sandwiched between adjacent radiating fins 7, or a configuration in which the semiconductor module 3 is in contact with one side surface of the radiating fin 7 as shown in FIG. 5B. It is also possible.
  • the semiconductor module 3 is not limited to the configuration in which the semiconductor module 3 is disposed so as to be opposed to each other with the radiating fins 7 interposed therebetween, and as illustrated in FIG. is there.
  • the first heat generating component of the present invention is not necessarily limited to the semiconductor module 3 described above, and it is possible to appropriately change the position, number, etc. of the arrangement.
  • the insertion groove 8 can be appropriately changed according to the size of the first heat generating component. Therefore, the plurality of radiating fins 7 may be provided with insertion grooves 8 having different depths and widths according to the size of each first heat-generating component.
  • the present invention is not limited to the configuration in which the lid member 9 that closes the insertion port of the insertion groove 8 described above is provided, and a difference that holds the semiconductor module 3 so as to be inserted like the insertion hole 25 described above. It is good also as a structure provided with the penetration hole.
  • the insertion port 8a may be provided with a tapered portion 8b.
  • the insertion groove 8 is not limited to the shape having the constant width described above, and for example, as shown in FIG. 6B, a shape (so-called wedge shape) in which the width gradually decreases toward the distal end portion in the depth direction.
  • the semiconductor module 3 inserted into the insertion groove 8 is not easily removed by making the shape gradually narrower toward the center in the depth direction (so-called drum shape).
  • a structure is also possible.
  • the heat dissipation can be enhanced by the semiconductor module 3 being in close contact with the fin portions 7a and 7b during heat dissipation expansion.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Thermal Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The present invention provides a heat-dissipating structure having high heat dissipation properties. This heat-dissipating structure includes: a heat sink (2) having a base section (6) and a plurality of heat-dissipating fins (7A, 7B) provided in an upright manner on a first surface (6a) of the base section (6); a first heat-generating component (3) for contacting one or more of the heat-dissipating fins (7B) among the plurality of heat-dissipating fins (7A, 7B), and provided on the first surface (6a) side of the base section (6); and a circuit substrate (4) electrically connected to the first heat-generating component (3) and joined to a second surface (6b) of the base section (6) on the opposite side thereof from the first surface (6a).

Description

放熱構造Heat dissipation structure
　本発明は、放熱構造に関する。 The present invention relates to a heat dissipation structure.
　例えば、電子部品などの発熱部品の放熱構造として、ヒートシンクを用いた放熱構造が知られている（特許文献１を参照。）。特許文献１の放熱構造では、ベース部と、ベース部の第一の面に立設された複数の放熱フィンとを含むヒートシンクが用いられる。ベース部の第一の面とは反対側の第二の面には、冷却対象となる全ての発熱部品が配置される。発熱部品の熱は、ベース部を経由して放熱フィンに伝わり、放熱フィンから外部に放熱される。 For example, a heat dissipation structure using a heat sink is known as a heat dissipation structure for a heat generating component such as an electronic component (see Patent Document 1). In the heat dissipation structure of Patent Document 1, a heat sink including a base portion and a plurality of heat dissipating fins standing on the first surface of the base portion is used. All the heat generating components to be cooled are arranged on the second surface opposite to the first surface of the base portion. The heat of the heat generating component is transmitted to the heat radiating fin via the base portion, and is radiated to the outside from the heat radiating fin.
特開２０１３－１１０１８１号公報JP 2013-110181 A
　上述したヒートシンクを用いた放熱構造においては、放熱性を高めるために放熱フィンを設けるなどの工夫がされているものの、放熱性の面で更なる改善の余地がある。例えば、パワーデバイスなどの発熱量が比較的大きい発熱部品を冷却する場合には、高い放熱性を有する放熱構造が必要となる。 In the heat dissipation structure using the heat sink described above, there has been room for further improvement in terms of heat dissipation, although contrivances such as providing heat dissipation fins have been made to enhance heat dissipation. For example, in the case of cooling a heat generating component that generates a relatively large amount of heat, such as a power device, a heat dissipation structure having high heat dissipation is required.
　本発明の一態様は、高い放熱性を有する放熱構造を提供することを目的とする。 An object of one embodiment of the present invention is to provide a heat dissipation structure having high heat dissipation.
　本発明の一態様に係る放熱構造は、ベース部と、前記ベース部の第一の面に立設された複数の放熱フィンと、を有するヒートシンクと、前記ベース部の前記第一の面側に設けられ、前記複数の放熱フィンのうちの少なくとも１つの前記放熱フィンと接する第一の発熱部品と、前記ベース部の前記第一の面とは反対側の第二の面に接合され、前記第一の発熱部品と電気的に接続された回路基板と、を含む。 A heat dissipation structure according to an aspect of the present invention includes a heat sink having a base portion and a plurality of heat dissipating fins erected on the first surface of the base portion, and on the first surface side of the base portion. A first heat-generating component that is in contact with at least one of the plurality of heat dissipating fins, and is joined to a second surface opposite to the first surface of the base portion; A circuit board electrically connected to the one heat generating component.
　本発明の一態様によれば、第一の発熱部品をベース部の第一の面側に配置し、放熱フィンに接触させて効率よく放熱を行うことができるため、放熱性の高い放熱構造が得られる。 According to one aspect of the present invention, the first heat-generating component can be disposed on the first surface side of the base portion and brought into contact with the heat-radiating fins to efficiently dissipate heat. can get.
本発明の実施形態に係る放熱構造の一例を示す断面図である。It is sectional drawing which shows an example of the thermal radiation structure which concerns on embodiment of this invention. 図１に示す放熱構造を第１の面側から見た平面図である。It is the top view which looked at the thermal radiation structure shown in FIG. 1 from the 1st surface side. 図１示す半導体モジュールを拡大して示す断面図である。It is sectional drawing which expands and shows the semiconductor module shown in FIG. モールド樹脂が設けられた半導体モジュールの断面模式図である。It is a cross-sectional schematic diagram of the semiconductor module provided with mold resin. 絶縁膜が設けられた半導体モジュールの断面模式図である。It is a cross-sectional schematic diagram of a semiconductor module provided with an insulating film. 半導体モジュールの配置例を示す平面図である。It is a top view which shows the example of arrangement | positioning of a semiconductor module. 半導体モジュールの配置例を示す平面図である。It is a top view which shows the example of arrangement | positioning of a semiconductor module. 半導体モジュールの配置例を示す平面図である。It is a top view which shows the example of arrangement | positioning of a semiconductor module. 差込溝の変形例を示す断面図である。It is sectional drawing which shows the modification of an insertion groove. 差込溝の変形例を示す断面図である。It is sectional drawing which shows the modification of an insertion groove. 差込溝の変形例を示す断面図である。It is sectional drawing which shows the modification of an insertion groove.
　以下、本発明の実施の形態について、図面を参照して詳細に説明する。
　なお、以下の説明では、各構成要素を見易くするため、図面において構成要素によって寸法の縮尺を異ならせて示すことがある。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
In the following description, in order to make each component easy to see, the scale of the dimension may be changed depending on the component in the drawings.
　図１及び図２を参照して、本発明の一実施形態である放熱構造１について説明する。
　放熱構造１は、図１及び図２に示すように、ヒートシンク２と、複数の半導体モジュール（第一の発熱部品）３と、回路基板４と、複数の電子部品（第二の発熱部品）５とを備える半導体装置において、半導体モジュール３及び電子部品５が発する熱をヒートシンク２により放熱する構造である。 With reference to FIG.1 and FIG.2, the thermal radiation structure 1 which is one Embodiment of this invention is demonstrated.
As shown in FIGS. 1 and 2, the heat dissipation structure 1 includes a heat sink 2, a plurality of semiconductor modules (first heat generating components) 3, a circuit board 4, and a plurality of electronic components (second heat generating components) 5. In the semiconductor device including the heat sink 2, the heat generated by the semiconductor module 3 and the electronic component 5 is radiated by the heat sink 2.
　具体的に、この放熱構造１において、ヒートシンク２は、例えばＣｕやＡｌなどの熱伝導性の高い材料からなる。ヒートシンク２は、ベース部６と、複数の放熱フィン７Ａ，７Ｂとを有している。ベース部６は、矩形平板状に形成されている。各放熱フィン７Ａ，７Ｂは、矩形平板状に形成されて、ベース部６の第一の面６ａに対して垂直に立設されている。また、複数の放熱フィン７Ａ，７Ｂは、ベース部６の長手方向（図２中における左右方向）の両端部及びその両端部の間に位置して、互いに間隔を空けた状態で並んで設けられている。また、各放熱フィン７Ａ，７Ｂは、ベース部６の短手方向（図２中における上下方向）の両端部の間に亘って立設されている。 Specifically, in the heat dissipation structure 1, the heat sink 2 is made of a material having high thermal conductivity such as Cu or Al. The heat sink 2 has a base portion 6 and a plurality of heat radiation fins 7A and 7B. The base part 6 is formed in a rectangular flat plate shape. Each of the heat radiating fins 7A and 7B is formed in a rectangular flat plate shape, and is erected vertically with respect to the first surface 6a of the base portion 6. The plurality of radiating fins 7A and 7B are located between the both ends of the base portion 6 in the longitudinal direction (left-right direction in FIG. 2) and the both ends thereof, and are arranged side by side with a space therebetween. ing. Each of the radiating fins 7A and 7B is erected between both end portions of the base portion 6 in the short direction (vertical direction in FIG. 2).
　本実施形態では、複数の放熱フィン７Ａ，７Ｂのうち、ベース部６の長手方向の両端部に沿った位置に２つの放熱フィン７Ａと、これら２つの放熱フィン７Ａの間に２つの放熱フィン７Ｂとがベース部６の長手方向に並んで設けられている。また、放熱フィン７Ｂは、半導体モジュール３を配置するため、放熱フィン７Ａよりも高さ及び厚み方向の寸法が大きくなっている。なお、ヒートシンク２については、本実施形態のものに必ずしも限定されるものではなく、各放熱フィン７Ａ，７Ｂの数や寸法等を適宜変更して実施することが可能である。 In the present embodiment, among the plurality of radiating fins 7A and 7B, two radiating fins 7A are provided at positions along both longitudinal ends of the base portion 6, and two radiating fins 7B are provided between the two radiating fins 7A. Are arranged in the longitudinal direction of the base portion 6. Moreover, since the semiconductor module 3 is arrange | positioned, the height and the dimension of the thickness direction of the radiation fin 7B are larger than the radiation fin 7A. In addition, about the heat sink 2, it is not necessarily limited to the thing of this embodiment, It is possible to implement by changing suitably the number, dimension, etc. of each radiation fin 7A, 7B.
　放熱フィン７Ｂには、差込溝８が設けられている。差込溝８は、放熱フィン７Ｂの先端側に設けられた差込口８ａから半導体モジュール３を差し込み可能に保持する。具体的に、この差込溝８は、放熱フィン７Ｂの先端側から一定の幅で第一の面６ａに対して垂直に半導体モジュール３を差し込むのに十分な深さで切り欠かれている。放熱フィン７Ｂは、この差込溝８によって２つのフィン部７ａ，７ｂに分断されている。 Insertion grooves 8 are provided in the heat radiation fins 7B. The insertion groove 8 holds the semiconductor module 3 so that the semiconductor module 3 can be inserted from an insertion port 8a provided on the front end side of the heat radiation fin 7B. Specifically, the insertion groove 8 is cut out at a depth sufficient to insert the semiconductor module 3 perpendicularly to the first surface 6a with a certain width from the front end side of the radiating fin 7B. The radiating fin 7B is divided into two fin portions 7a and 7b by the insertion groove 8.
　また、放熱フィン７Ｂには、差込口８ａを塞ぐ蓋材９（図２において図示を省略する。）が設けられている。蓋材９は、差込溝８に半導体モジュール３が差し込まれた状態で、差込口８ａを閉塞するように取り付けられている。なお、蓋材９の取付構造については、このような構造に必ずしも限定されるものではなく、放熱フィン７を差込溝８の幅方向から挟み込むように蓋材９が取り付けられた構造とすることが可能である。また、蓋材９については、省略することも可能である。 Further, the heat radiating fin 7B is provided with a lid member 9 (not shown in FIG. 2) that closes the insertion port 8a. The lid member 9 is attached so as to close the insertion port 8 a in a state where the semiconductor module 3 is inserted into the insertion groove 8. In addition, about the attachment structure of the cover material 9, it is not necessarily limited to such a structure, It is set as the structure where the cover material 9 was attached so that the radiation fin 7 may be inserted | pinched from the width direction of the insertion groove | channel 8. Is possible. Further, the lid member 9 can be omitted.
　半導体モジュール３は、図３に拡大して示すように、第一の基板１０と、第一の半導体素子１１と、接続子１２と、第二の半導体素子１３と、第二の基板１４とを、順に積層することにより構成されている。 As shown in an enlarged view in FIG. 3, the semiconductor module 3 includes a first substrate 10, a first semiconductor element 11, a connector 12, a second semiconductor element 13, and a second substrate 14. , And are laminated in order.
　このうち、第一及び第二の基板１０，１４は、セラミック基板であり、セラミック板（絶縁板）１５，１６と、セラミック板１５，１６の両面に設けられたＣｕ層（導電層）１７，１８とを有している。また、第一の基板１０と第二の基板１４との互いに対向する面側のＣｕ層１７，１８は、この半導体モジュール３の回路パターン１７ａ，１８ａを形成している。なお、第一及び第二の基板１０，１４は、セラミック基板に限らず、例えばアルミニウム基板であってもよい。アルミニウム基板は、アルミニウム板の両面に絶縁層を介してＣｕ層が設けられた構成である。 Among these, the first and second substrates 10 and 14 are ceramic substrates, and ceramic plates (insulating plates) 15 and 16, and Cu layers (conductive layers) 17 provided on both surfaces of the ceramic plates 15 and 16, 18. Further, the Cu layers 17 and 18 on the side of the first substrate 10 and the second substrate 14 facing each other form circuit patterns 17 a and 18 a of the semiconductor module 3. The first and second substrates 10 and 14 are not limited to ceramic substrates but may be aluminum substrates, for example. The aluminum substrate has a structure in which a Cu layer is provided on both surfaces of an aluminum plate via an insulating layer.
　第一及び第二の半導体素子１１，１３は、動作時の発熱量が比較的大きい、例えばパワーダイオードやパワートランジスタなどのパワーデバイスである。第一の半導体素子１１と第二の半導体素子１３とは、第一の基板１０と第二の基板１４との互いに対向する面側に各々実装されることによって、それぞれの回路パターン１７ａ，１８ａと電気的に接続されている。 The first and second semiconductor elements 11 and 13 are power devices such as power diodes and power transistors that generate a relatively large amount of heat during operation. The first semiconductor element 11 and the second semiconductor element 13 are respectively mounted on the mutually opposing surface sides of the first substrate 10 and the second substrate 14, so that the circuit patterns 17 a and 18 a Electrically connected.
　接続子１２は、例えばＣｕなどの導電性材料からなる。接続子１２は、第一の接続部１２ａと、第二の接続部１２ｂと、連結部１２ｃとを有している。このうち、第一の接続部１２ａは、第一の半導体素子１１と第二の半導体素子１３とを電気的に接続する部分であり、第二の接続部１２ｂは、一方の回路パターン１７ａと電気的に接続される部分であり、連結部１２ｃは、第一の接続部１２ａと第二の接続部１２ｂとを連結する部分である。 The connector 12 is made of a conductive material such as Cu, for example. The connector 12 has a first connection part 12a, a second connection part 12b, and a connecting part 12c. Among these, the 1st connection part 12a is a part which electrically connects the 1st semiconductor element 11 and the 2nd semiconductor element 13, and the 2nd connection part 12b is electrically connected with one circuit pattern 17a. The connecting portion 12c is a portion that connects the first connecting portion 12a and the second connecting portion 12b.
　第一の接続部１２ａは、第一の基板１０と第二の基板１４との間隔を保持するのに十分な厚みで柱状に形成されている。第一の接続部１２ａの両端部は、はんだ等の導電性接着剤（図示せず。）を介して第一の半導体素子１１及び第二の半導体素子１３と接合されている。第二の接続部１２ｂは、板状に形成されて、はんだ等の導電性接着剤（図示せず。）を介して一方の回路パターン１７ａと接合されている。連結部１２ｃは、第一の接続部１２ａと第二の接続部１２ｂとを連結するのに十分な長さで長尺板状に形成されている。連結部１２ｃの一端側は、第一の接続部１２ａの側面と一体に接続されている。連結部１２ｃの他端側は、第二の接続部１２ｂ側に折り曲げられて第二の接続部１２ｂと一体に接続されている。 The first connection portion 12a is formed in a columnar shape with a thickness sufficient to maintain the distance between the first substrate 10 and the second substrate 14. Both end portions of the first connection portion 12a are joined to the first semiconductor element 11 and the second semiconductor element 13 through a conductive adhesive (not shown) such as solder. The second connecting portion 12b is formed in a plate shape and joined to one circuit pattern 17a via a conductive adhesive (not shown) such as solder. The connecting portion 12c is formed in a long plate shape with a length sufficient to connect the first connecting portion 12a and the second connecting portion 12b. One end side of the connecting portion 12c is integrally connected to the side surface of the first connecting portion 12a. The other end side of the connecting portion 12c is bent toward the second connecting portion 12b and connected integrally with the second connecting portion 12b.
　第一の基板１０と第二の基板１４との間には、スペーサ１９が配置されている。スペーサ１９は、第一の接続部１２ａと共に、第一の基板１０と第二の基板１４との間隔を保持している。また、スペーサ１９は、この半導体モジュール３の回路部品として、回路パターン１７ａ，１８ａの間に挟み込まれた状態で配置されている。回路部品としては、例えば、配線部、抵抗器、コンデンサなどが挙げられる。 A spacer 19 is disposed between the first substrate 10 and the second substrate 14. The spacer 19 holds the distance between the first substrate 10 and the second substrate 14 together with the first connection portion 12a. The spacer 19 is disposed as a circuit component of the semiconductor module 3 in a state of being sandwiched between the circuit patterns 17a and 18a. Examples of the circuit component include a wiring part, a resistor, and a capacitor.
　図１及び図２に示す回路基板４及び複数の電子部品５は、半導体モジュール３の駆動を制御する制御部３０を構成している。このうち、回路基板４は、ヒートシンク２（ベース部６）の第一の面６ａとは反対側の第二の面６ｂに接合されている。一方、複数の電子部品５は、回路基板４上に実装されている。各電子部品５は、各半導体モジュール３よりも発熱量が小さい発熱部品である。 The circuit board 4 and the plurality of electronic components 5 shown in FIGS. 1 and 2 constitute a control unit 30 that controls the driving of the semiconductor module 3. Among these, the circuit board 4 is joined to the second surface 6b opposite to the first surface 6a of the heat sink 2 (base portion 6). On the other hand, the plurality of electronic components 5 are mounted on the circuit board 4. Each electronic component 5 is a heat generating component that generates less heat than each semiconductor module 3.
　複数の電子部品５のうち一部の電子部品５と半導体モジュール３とは、コネクタ２０を介して電気的に接続されている。コネクタ２０は、半導体モジュール３側の第一の接続端子２１ａ，２１ｂが差し込まれる第一の差込口２２ａ，２２ｂと、電子部品５側の第二の接続端子２３が差し込まれる第二の差込口２４とを有している。半導体モジュール３側の第一の接続端子２１ａ，２１ｂは、図３において図示を省略するものの、回路パターン１７ａ，１８ａと各々接続されている。 Among the plurality of electronic components 5, some of the electronic components 5 and the semiconductor module 3 are electrically connected via a connector 20. The connector 20 includes first insertion ports 22a and 22b into which the first connection terminals 21a and 21b on the semiconductor module 3 side are inserted, and a second insertion into which the second connection terminal 23 on the electronic component 5 side is inserted. And a mouth 24. Although not shown in FIG. 3, the first connection terminals 21a and 21b on the semiconductor module 3 side are connected to the circuit patterns 17a and 18a, respectively.
　ヒートシンク２には、コネクタ２０を差し込み可能に保持する差込孔２５が設けられている。ヒートシンク２には、半導体モジュール３側の第一の接続端子２１ａ，２１ｂを貫通させる第一の貫通孔２６ａ，２６ｂが設けられている。第一の貫通孔２６ａ，２６ｂは、差込溝８の底面から差込孔２５に向かって形成されている。ヒートシンク２及び回路基板４には、電子部品５側の第二の接続端子２３を貫通させる第二の貫通孔２７が設けられている。第二の貫通孔２７は、回路基板４の電子部品５が実装される面から差込孔２５に向かって形成されている。また、第一の接続端子２１ａ，２１ｂ及び第二の接続端子２３は、第一の貫通孔２６ａ，２６ｂ及び第二の貫通孔２７との間で電気的に絶縁されている。 The heat sink 2 is provided with an insertion hole 25 for holding the connector 20 so that the connector 20 can be inserted. The heat sink 2 is provided with first through holes 26a and 26b that allow the first connection terminals 21a and 21b on the semiconductor module 3 side to pass therethrough. The first through holes 26 a and 26 b are formed from the bottom surface of the insertion groove 8 toward the insertion hole 25. The heat sink 2 and the circuit board 4 are provided with a second through hole 27 through which the second connection terminal 23 on the electronic component 5 side passes. The second through hole 27 is formed from the surface on which the electronic component 5 of the circuit board 4 is mounted toward the insertion hole 25. The first connection terminals 21 a and 21 b and the second connection terminal 23 are electrically insulated from the first through holes 26 a and 26 b and the second through hole 27.
　以上のような構成を有する放熱構造１では、半導体モジュール３が差込溝８に差し込まれた状態で放熱フィン７Ｂと接している。これにより、半導体モジュール３が発する熱は、差込溝８の内壁面、すなわちフィン部７ａ，７ｂと接する第一及び第二の基板１０，１４から放熱フィン７Ｂへと伝わり、外部に放熱されることになる。一方、複数の電子部品５が発する熱は、回路基板４からベース部６を経由して放熱フィン７Ａ，７Ｂへと伝わり、外部に放熱されることになる。この場合、半導体モジュール３が発する熱は、ベース部６を経由することなく、放熱フィン７Ｂへと直接伝わるため、熱の伝達経路が短くなり、半導体モジュール３の放熱性が高まる。 In the heat dissipation structure 1 having the above-described configuration, the semiconductor module 3 is in contact with the heat dissipation fins 7 </ b> B in a state where the semiconductor module 3 is inserted into the insertion groove 8. Thereby, the heat generated by the semiconductor module 3 is transmitted from the first and second substrates 10 and 14 in contact with the inner wall surface of the insertion groove 8, that is, the fin portions 7a and 7b, to the radiation fins 7B, and is radiated to the outside. It will be. On the other hand, the heat generated by the plurality of electronic components 5 is transferred from the circuit board 4 to the heat radiation fins 7A and 7B via the base portion 6, and is radiated to the outside. In this case, the heat generated by the semiconductor module 3 is directly transmitted to the heat radiating fins 7 </ b> B without passing through the base portion 6, so that the heat transmission path is shortened and the heat dissipation performance of the semiconductor module 3 is improved.
　以上のように、本実施形態の放熱構造１では、半導体モジュール３を放熱フィン７Ｂに接した状態で配置することで、従来のように半導体モジュール３をベース部６の第二の面６ｂに配置する場合に比べて、高い放熱性を得ることが可能である。 As described above, in the heat dissipation structure 1 of the present embodiment, the semiconductor module 3 is disposed on the second surface 6b of the base portion 6 as in the related art by disposing the semiconductor module 3 in contact with the heat dissipation fins 7B. Compared with the case where it does, it is possible to obtain high heat dissipation.
　また、本実施形態の放熱構造１では、半導体モジュール３を差込溝８に差し込んだ状態で配置することで、従来のように半導体モジュール３をベース部６の第二の面６ｂに配置する場合に比べて、小型化が可能となる。さらに、半導体モジュール３の第一及び第二の基板１０，１４をフィン部７ａ，７ｂに接触させることで、半導体モジュール３からの放熱を効率よく行わせることが可能である。 Further, in the heat dissipation structure 1 of the present embodiment, the semiconductor module 3 is arranged on the second surface 6b of the base portion 6 as in the prior art by arranging the semiconductor module 3 in a state inserted into the insertion groove 8. Compared to, it is possible to downsize. Furthermore, by bringing the first and second substrates 10 and 14 of the semiconductor module 3 into contact with the fin portions 7a and 7b, it is possible to efficiently dissipate heat from the semiconductor module 3.
　ところで、半導体モジュール３については、図４Ａに模式的に示すように、絶縁性の確保及びパーティクルに対する保護のため、モールド樹脂２８によって第一の基板１０と第二の基板１４との互いに対向する面側を封止することが行われる。しかしながら、このようなモールド樹脂２８は、第一及び第二の半導体素子１１，１３や第一及び第二の基板１０，１４等との間で線膨張係数の差が大きいため、熱膨張時にクラック等が生じ易い。 By the way, as shown schematically in FIG. 4A for the semiconductor module 3, the surfaces of the first substrate 10 and the second substrate 14 facing each other by the mold resin 28 in order to ensure insulation and protect against particles. The side is sealed. However, since such a mold resin 28 has a large difference in linear expansion coefficient between the first and second semiconductor elements 11 and 13 and the first and second substrates 10 and 14, cracks are caused during thermal expansion. Etc. are likely to occur.
　これに対して、本発明では、図４Ｂに模式的に示すように、モールド樹脂２８の代わりに、第一の基板１０と第二の基板１４との互いに対向する面を覆う絶縁膜２９を設けた構成とすることが可能である。絶縁膜２９には、例えばセラミック等の高熱伝導性を有する絶縁材料が用いられる。 On the other hand, in the present invention, as schematically shown in FIG. 4B, an insulating film 29 that covers the mutually opposing surfaces of the first substrate 10 and the second substrate 14 is provided instead of the mold resin 28. Can be configured. For the insulating film 29, for example, an insulating material having high thermal conductivity such as ceramic is used.
　本実施形態の放熱構造１では、このような絶縁膜２９が設けられた半導体モジュール３を差込溝８に差し込むことによって、絶縁性の確保及びパーティクルに対する保護が可能となる。さらに、絶縁膜２９を設けた場合は、絶縁膜２９の薄膜化によって半導体モジュール３からの放熱性が高められるだけでなく、線膨張係数の差によるクラックの発生が抑制可能となる。また、モールド樹脂２８で封止するための工程が省略できるため、製造工程の簡略化が図れる。 In the heat dissipation structure 1 of the present embodiment, it is possible to ensure insulation and protect particles by inserting the semiconductor module 3 provided with such an insulating film 29 into the insertion groove 8. Furthermore, when the insulating film 29 is provided, not only the heat dissipation from the semiconductor module 3 is improved by reducing the thickness of the insulating film 29, but also the generation of cracks due to the difference in linear expansion coefficient can be suppressed. Moreover, since the process for sealing with the mold resin 28 can be omitted, the manufacturing process can be simplified.
　なお、本発明は、上記実施形態のものに必ずしも限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。
　具体的に、本発明では、上述した差込溝８に半導体モジュール３が差し込まれた構成に必ずしも限定されるものではなく、半導体モジュール３が複数の放熱フィン７Ａ，７Ｂのうちの少なくとも１つの放熱フィン７Ａ（７Ｂ）と接する構成であればよい。 In addition, this invention is not necessarily limited to the thing of the said embodiment, A various change can be added in the range which does not deviate from the meaning of this invention.
Specifically, the present invention is not necessarily limited to the configuration in which the semiconductor module 3 is inserted into the insertion groove 8 described above, and the semiconductor module 3 radiates at least one of the plurality of heat radiation fins 7A and 7B. What is necessary is just the structure which touches fin 7A (7B).
　したがって、例えば、図５Ａに示すように、隣り合う放熱フィン７の間に半導体モジュール３が挟み込まれた構成や、図５Ｂに示すように、放熱フィン７の一側面に半導体モジュール３が接した構成とすることも可能である。また、半導体モジュール３は、上述した放熱フィン７を挟んで対向して配置された構成に限らず、図５Ｃに示すように、放熱フィン７を挟んで配置をずらした構成とすることも可能である。 Therefore, for example, as shown in FIG. 5A, a configuration in which the semiconductor module 3 is sandwiched between adjacent radiating fins 7, or a configuration in which the semiconductor module 3 is in contact with one side surface of the radiating fin 7 as shown in FIG. 5B. It is also possible. In addition, the semiconductor module 3 is not limited to the configuration in which the semiconductor module 3 is disposed so as to be opposed to each other with the radiating fins 7 interposed therebetween, and as illustrated in FIG. is there.
　また、本発明の第一の発熱部品としては、上述した半導体モジュール３に必ずしも限定されるものではなく、その配置される位置や数等についても適宜変更を加えることが可能である。また、差込溝８についても、第一の発熱部品の大きさに合わせて適宜変更を加えることが可能である。したがって、複数の放熱フィン７には、個々の第一の発熱部品の大きさに合わせて深さや幅の異なる差込溝８が設けられていてもよい。 Further, the first heat generating component of the present invention is not necessarily limited to the semiconductor module 3 described above, and it is possible to appropriately change the position, number, etc. of the arrangement. Also, the insertion groove 8 can be appropriately changed according to the size of the first heat generating component. Therefore, the plurality of radiating fins 7 may be provided with insertion grooves 8 having different depths and widths according to the size of each first heat-generating component.
　また、本発明は、上述した差込溝８の差込口を塞ぐ蓋材９が設けられた構成に限らず、上述した差込孔２５のように、半導体モジュール３を差し込み可能に保持する差込孔が設けられた構成としてもよい。 In addition, the present invention is not limited to the configuration in which the lid member 9 that closes the insertion port of the insertion groove 8 described above is provided, and a difference that holds the semiconductor module 3 so as to be inserted like the insertion hole 25 described above. It is good also as a structure provided with the penetration hole.
　また、本発明では、例えば図６Ａに示すように、差込溝８に半導体モジュール３を差し込み易くするため、差込口８ａにテーパー部８ｂを設けた構成としてもよい。また、差込溝８については、上述した一定の幅を有する形状に限らず、例えば図６Ｂに示すように、深さ方向の先端部に向かって漸次幅が狭くなる形状（いわゆる楔形状）や、図６Ｃに示すように、深さ方向の中央部に向かって漸次幅が狭くなる形状（いわゆる鼓形状）とすることで、この差込溝８に差し込まれた半導体モジュール３が容易に抜けない構造とすることも可能である。また、放熱膨張時に半導体モジュール３がフィン部７ａ，７ｂに密着することで、放熱性を高めることが可能である。 Further, in the present invention, for example, as shown in FIG. 6A, in order to make it easy to insert the semiconductor module 3 into the insertion groove 8, the insertion port 8a may be provided with a tapered portion 8b. In addition, the insertion groove 8 is not limited to the shape having the constant width described above, and for example, as shown in FIG. 6B, a shape (so-called wedge shape) in which the width gradually decreases toward the distal end portion in the depth direction. As shown in FIG. 6C, the semiconductor module 3 inserted into the insertion groove 8 is not easily removed by making the shape gradually narrower toward the center in the depth direction (so-called drum shape). A structure is also possible. In addition, the heat dissipation can be enhanced by the semiconductor module 3 being in close contact with the fin portions 7a and 7b during heat dissipation expansion.
　１…放熱構造　２…ヒートシンク　３…半導体モジュール（第一の発熱部品）　４…回路基板　５…電子部品（第二の発熱部品）　６…ベース部　６ａ…第一の面　６ｂ…第二の面　７Ａ，７Ｂ…放熱フィン　７ａ，７ｂ…フィン部　８…差込溝　９…蓋材　１０…第一の基板　１１…第一の半導体素子　１２…接続子　１３…第二の半導体素子　１４…第二の基板　１５，１６…セラミック板（絶縁板）　１７，１８…Ｃｕ層（導電層）　１７ａ，１８ａ…回路パターン　１９…スペーサ　２０…コネクタ　２１ａ，２１ｂ…第一の接続端子　２２ａ，２２ｂ…第一の差込口　２３…第二の接続端子　２４…第二の差込口　２５…差込孔　２６ａ，２６ｂ…第一の貫通孔　２７…第二の貫通孔　２８…モールド樹脂　２９…絶縁膜　３０…制御部 DESCRIPTION OF SYMBOLS 1 ... Heat dissipation structure 2 ... Heat sink 3 ... Semiconductor module (1st heat-emitting component) 4 ... Circuit board 5 ... Electronic component (2nd heat-generating component) 6 ... Base part 6a ... 1st surface 6b ... 2nd surface 7A , 7B ... Radiating fins 7a, 7b ... Fins 8 ... Insertion groove 9 ... Lid 10 ... First substrate 11 ... First semiconductor element 12 ... Connector 13 ... Second semiconductor element 14 ... Second substrate 15, 16 ... Ceramic plate (insulating plate) 17, 18 ... Cu layer (conductive layer) 17a, 18a ... Circuit pattern 19 ... Spacer 20 ... Connector 21a, 21b ... First connection terminal 22a, 22b ... First plug Port 23 ... second connection terminal 24 ... second insertion port 25 ... insertion hole 26a, 26b ... first through hole 27 ... second through hole 28 ... mold resin 29 ... insulating film 30 Control unit

Claims (7)

  1. 　ベース部と、前記ベース部の第一の面に立設された複数の放熱フィンと、を有するヒートシンクと、
    　前記ベース部の前記第一の面側に設けられ、前記複数の放熱フィンのうちの少なくとも１つの前記放熱フィンと接する第一の発熱部品と、
    　前記ベース部の前記第一の面とは反対側の第二の面に接合され、前記第一の発熱部品と電気的に接続された回路基板と、
    　を含む放熱構造。     A heat sink having a base portion and a plurality of heat dissipating fins erected on the first surface of the base portion;
    A first heat generating component provided on the first surface side of the base portion and in contact with at least one of the plurality of heat dissipating fins;
    A circuit board joined to a second surface opposite to the first surface of the base portion and electrically connected to the first heat-generating component;
    Including heat dissipation structure.
  2. 　前記回路基板上には、前記第一の発熱部品よりも発熱量が小さい第二の発熱部品が設けられている
    　請求項１に記載の放熱構造。     2. The heat dissipation structure according to claim 1, wherein a second heat generating component having a heat generation amount smaller than that of the first heat generating component is provided on the circuit board.
  3. 　前記複数の放熱フィンのうちの少なくとも１つの前記放熱フィンの端面には、前記第一の発熱部品を差し込み可能な差込溝が設けられ、
    　前記第一の発熱部品は、前記差込溝に差し込まれて前記放熱フィンと接している
    　請求項２に記載の放熱構造。     The end face of at least one of the plurality of radiating fins is provided with an insertion groove into which the first heat generating component can be inserted,
    The heat dissipation structure according to claim 2, wherein the first heat generating component is inserted into the insertion groove and is in contact with the heat dissipation fin.
  4. 　前記差込溝の差込口を塞ぐ蓋材が設けられている
    　請求項３に記載の放熱構造。     The heat dissipation structure according to claim 3, wherein a lid member that closes the insertion port of the insertion groove is provided.
  5. 　前記放熱フィンの間に前記第一の発熱部品が挟み込まれている
    　請求項２に記載の放熱構造。     The heat dissipation structure according to claim 2, wherein the first heat generating component is sandwiched between the heat dissipation fins.
  6. 　前記第一の発熱部品は、第一の基板、第一の半導体素子、接続子、第二の半導体素子および第二の基板を順に積層することにより構成され、
    　前記第一の基板および前記第二の基板が前記差込溝の内壁面と接している
    　請求項３に記載の放熱構造。     The first heat-generating component is configured by sequentially stacking a first substrate, a first semiconductor element, a connector, a second semiconductor element, and a second substrate,
    The heat dissipation structure according to claim 3, wherein the first substrate and the second substrate are in contact with an inner wall surface of the insertion groove.
  7. 　前記第一の基板と前記第二の基板との互いに対向する面を覆う保護膜が設けられている
    　請求項６に記載の放熱構造。     The heat dissipation structure according to claim 6, further comprising a protective film that covers surfaces of the first substrate and the second substrate that face each other.
PCT/JP2014/078771 2014-10-29 2014-10-29 Heat-dissipating structure WO2016067390A1 (en)

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