WO2016065898A1 - 阵列基板、显示面板及显示装置 - Google Patents

阵列基板、显示面板及显示装置 Download PDF

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WO2016065898A1
WO2016065898A1 PCT/CN2015/080456 CN2015080456W WO2016065898A1 WO 2016065898 A1 WO2016065898 A1 WO 2016065898A1 CN 2015080456 W CN2015080456 W CN 2015080456W WO 2016065898 A1 WO2016065898 A1 WO 2016065898A1
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Prior art keywords
thin film
film transistor
electrode
gate
array substrate
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PCT/CN2015/080456
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English (en)
French (fr)
Inventor
李文波
吴新银
李盼
程鸿飞
先建波
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京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US14/785,831 priority Critical patent/US10274790B2/en
Priority to EP15778186.5A priority patent/EP3214491B1/en
Publication of WO2016065898A1 publication Critical patent/WO2016065898A1/zh
Priority to US16/184,305 priority patent/US11209702B2/en
Priority to US16/369,553 priority patent/US11221524B2/en

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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
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    • G09G2300/043—Compensation electrodes or other additional electrodes in matrix displays related to distortions or compensation signals, e.g. for modifying TFT threshold voltage in column driver
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G09G2300/0443—Pixel structures with several sub-pixels for the same colour in a pixel, not specifically used to display gradations
    • G09G2300/0447—Pixel structures with several sub-pixels for the same colour in a pixel, not specifically used to display gradations for multi-domain technique to improve the viewing angle in a liquid crystal display, such as multi-vertical alignment [MVA]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/028—Improving the quality of display appearance by changing the viewing angle properties, e.g. widening the viewing angle, adapting the viewing angle to the view direction
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    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
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    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Definitions

  • the present application relates to the field of display technologies, and in particular, to an array substrate, a display panel, and a display device.
  • liquid crystal displays Due to its small size, light weight, low power consumption, low driving voltage and no radiation, liquid crystal displays have been widely used in television, mobile phones and public information display fields, and are the most widely used display technologies. For liquid crystal displays, especially for applications such as large-size LCD TVs, liquid crystal displays are required to have a wide viewing angle range.
  • liquid crystal molecular deflection is mainly driven by a vertical electric field between a pixel electrode and a common electrode.
  • the contrast is low and the color is distorted, that is, there is a problem that the viewing angle (hereinafter simply referred to as "viewing angle”) is narrow. .
  • the various display modes include: a 90° twisted nematic liquid crystal plus compensation film mode, a pixel electrode patterning vertical alignment mode, and a plane using a fringe field. Drive mode, etc.
  • the 90° twisted nematic liquid crystal plus compensation film mode has limited improvement of viewing angle, and is generally only applied to notebook computers and desktop monitors; the pixel electrode vertical alignment mode needs to make the pixel electrode into a complex slit structure, affecting The light utilization efficiency; the planar drive mode using the fringe field requires high process control precision, a difficult manufacturing process, and affects contrast.
  • Embodiments of the present disclosure provide an array substrate, a display panel, and a display device, which charge and discharge different domain regions of a pixel unit by a charge and discharge element and a plurality of thin film transistors, thereby forming first voltage domain regions having different voltages from each other and The second voltage domain region effectively improves the display viewing angle of the liquid crystal display.
  • An embodiment of the present disclosure provides an array substrate, including: a plurality of data lines and a plurality of gate lines, the plurality of data lines and the plurality of pixel lines defining the plurality of pixel units, each of the pixel units including the a pixel electrode, a second pixel electrode, and at least three thin film transistors, wherein a gate of the first thin film transistor and the second thin film transistor of the at least three thin film transistors are connected to the same one of the plurality of gate lines a line, a source of the first thin film transistor and the second thin film transistor are connected to a same one of the plurality of data lines, a drain of the first thin film transistor is connected to a first pixel electrode, The drain of the second thin film transistor is connected to the second pixel electrode, wherein the pixel unit further includes: a charge and discharge element, and the third thin film transistor of the at least three thin film transistors is opposite to the pixel unit Charging and discharging are performed such that the pixel unit forms a first voltage domain region and a
  • the voltages are formed different from each other.
  • the first voltage domain region and the second voltage domain region are such that the liquid crystal molecules have a plurality of domain regions with different orientations to realize a wide viewing angle display of the liquid crystal, thereby overcoming the defects of the liquid crystal display having a narrow viewing angle in the prior art, and effectively improving the liquid crystal.
  • the display viewing angle of the display, and the manufacturing process is compatible with the existing manufacturing process, and no equipment cost increases.
  • the pixel unit may further include a first auxiliary electrode, the charge and discharge element is a capacitor, and the at least three thin film transistors are Three thin film transistors, a gate of the third thin film transistor is connected to a gate line connected to a gate of the first and second thin film transistors, and a source of the third thin film transistor is connected to the first pixel electrode a drain of the third thin film transistor is connected to a first pole of the capacitor, a second pole of the capacitor is connected to the first auxiliary electrode, and a first electrode is formed between the first auxiliary electrode and the second pixel electrode Storage capacitor.
  • the first auxiliary electrode may be disposed in the same layer as the gate of the third thin film transistor.
  • the pixel unit may further include a second auxiliary electrode, the charge and discharge element is a diode, and the gate of the third thin film transistor a gate connected to the gate line connected to the gates of the first and second thin film transistors, a source of the third thin film transistor is connected to the first pixel electrode, and a drain of the third thin film transistor is connected to the diode First electrode, the second A second electrode of the pole tube is connected to the second auxiliary electrode, and a storage capacitor is formed between the second auxiliary electrode and the second pixel electrode.
  • the second auxiliary electrode may be disposed in the same layer as the gate of the third thin film transistor.
  • the pixel unit may further include a third auxiliary electrode, the charge and discharge element is a diode, and the gate of the third thin film transistor a gate connected to the gate line connected to the gates of the first and second thin film transistors, a source of the third thin film transistor is connected to the first pixel electrode, and a drain of the third thin film transistor is connected to the diode a first electrode, a first capacitor is formed between the second electrode of the diode and the third auxiliary electrode, and a storage capacitor is formed between the third auxiliary electrode and the second pixel electrode.
  • the third auxiliary electrode may be disposed in the same layer as the gate of the third thin film transistor.
  • the diode is implemented by a fourth thin film transistor, a gate of the fourth thin film transistor and a source of the fourth thin film transistor
  • the poles are electrically connected and collectively serve as a first electrode of the diode, and a drain of the fourth thin film transistor serves as a second electrode of the diode.
  • Embodiments of the present disclosure provide a display panel including an array substrate according to the present disclosure.
  • the display panel may be a liquid crystal display panel.
  • the present disclosure by adding a charge and discharge element to a pixel unit of the array substrate, charging and discharging different domain regions of the pixel unit using the charge and discharge element and the plurality of thin film transistors, thereby forming voltages different from each other
  • the first voltage domain region and the second voltage domain region are such that the liquid crystal molecules have a plurality of domain regions with different orientations to realize a wide viewing angle display of the liquid crystal, thereby overcoming the defects of the liquid crystal display having a narrow viewing angle in the prior art, and effectively improving the liquid crystal.
  • the display viewing angle of the display, and the manufacturing process is compatible with the existing manufacturing process, and no equipment cost increases.
  • Embodiments of the present disclosure provide a display device including a display panel according to the present disclosure.
  • the display device may be a liquid crystal display device.
  • the charge and discharge element and the plurality of thin films are used by adding a charge and discharge element to the pixel unit of the array substrate in the display panel.
  • the transistor charges and discharges different domain regions of the pixel unit, thereby forming a first voltage domain region and a second voltage domain region different in voltage from each other, so that the liquid crystal molecules have a plurality of domain regions having different orientations, so as to realize a wide viewing angle display of the liquid crystal. Therefore, the defect of the liquid crystal display angle is too narrow in the prior art, the display viewing angle of the liquid crystal display is effectively improved, and the manufacturing process is compatible with the existing manufacturing process, and no equipment cost is increased.
  • FIG. 1 is a schematic structural diagram of an array substrate according to an embodiment of the present disclosure
  • FIG. 2 is a schematic cross-sectional view taken along line A-A' of the array substrate structure of FIG. 1;
  • FIG. 3 is a schematic cross-sectional view taken along line B-B' of the array substrate structure of FIG. 1;
  • FIG. 4 to FIG. 6 are schematic structural diagrams of an array substrate according to another embodiment of the present disclosure.
  • Fig. 7 is a cross-sectional view showing the structure of the array substrate shown in Fig. 6 taken along line C-C'.
  • each film layer in the drawings do not reflect the true proportions of the components of the array substrate, and the purpose is only to schematically illustrate the contents of the present disclosure.
  • An embodiment of the present disclosure provides an array substrate, including: a plurality of data lines and a plurality of gate lines, the plurality of data lines and the plurality of pixel lines defining the plurality of pixel units, each of the pixel units including the a pixel electrode, a second pixel electrode, and at least three thin film transistors, wherein a gate of the first thin film transistor and the second thin film transistor of the at least three thin film transistors are connected to the same one of the plurality of gate lines a line, a source of the first thin film transistor and the second thin film transistor are connected to a same one of the plurality of data lines, a drain of the first thin film transistor is connected to a first pixel electrode, The drain of the second thin film transistor is connected to the second pixel electrode, wherein the pixel unit further includes: a charge and discharge element, and the third thin film transistor of the at least three thin film transistors is opposite to the pixel unit Charging and discharging are performed such that the pixel unit forms a first voltage domain region and a
  • the first voltage domain region and the second voltage domain region may be high voltage domain regions and low voltage domain regions whose voltages are different from each other.
  • the first voltage domain region is a high voltage domain region
  • the second voltage domain region is a low voltage domain region; or when the first voltage domain region is a low voltage domain region, the second voltage domain region is high Voltage domain region.
  • the array substrate provided by the embodiment of the present disclosure, by adding a charge and discharge element to a pixel unit of the array substrate, charging and discharging different domain regions of the pixel unit using the charge and discharge element and the plurality of thin film transistors, thereby forming voltages different from each other
  • the high voltage domain region and the low voltage domain region enable the liquid crystal molecules to have a plurality of domain regions with different orientations to realize a wide viewing angle display of the liquid crystal, thereby overcoming the defects of the liquid crystal display having a narrow viewing angle in the prior art, and effectively improving the display of the liquid crystal display.
  • the viewing angle, and the manufacturing process is compatible with existing manufacturing processes, and no equipment cost increases.
  • the charge and discharge element in the pixel unit may be a capacitor, a diode, or a combination of the two.
  • the structure of the array substrate of the present disclosure will be described below in conjunction with specific embodiments.
  • FIG. 1 is a schematic structural view of an array substrate according to Embodiment 1 of the present disclosure
  • FIG. 2 is a schematic cross-sectional view taken along line A-A' of the array substrate structure shown in FIG. 1
  • FIG. 3 is an array substrate structure shown in FIG. A schematic diagram of the structure along the B-B' section.
  • the pixel unit includes a first pixel electrode 41 and a second pixel electrode 42.
  • the gate line 10 is located between the first pixel electrode 41 and the second pixel electrode 42.
  • the pixel unit may include first to third thin film transistors.
  • the connection portion 31 of the data line 30 may be connected to the source 311 of the first thin film transistor and the second thin film transistor.
  • the gate line 10 between the first pixel electrode 41 and the second pixel electrode 42 may serve as the common gate 11 of each thin film transistor.
  • the drain 321 of the first thin film transistor may be electrically connected to the first pixel electrode 41 through the first via hole 361 penetrating the passivation layer 23.
  • the drain 322 of the second thin film transistor may be electrically connected to the second pixel electrode 42 through the second via 362 penetrating the passivation layer 23.
  • the connection relationship of the first to third thin film transistors is specifically: the gate 11 of the first thin film transistor is connected to the gate line 10, the source 311 is connected to the data line 30, and the drain 321 passes through the first via 361 and the first pixel electrode. 41 is electrically connected; the gate 11 of the second thin film transistor is connected to the gate line 10, the source 311 is connected to the data line 30, and the drain 322 is electrically connected to the second pixel electrode 42 through the second via 362; the third thin film transistor The gate 11 is connected to the gate line 10, the source 312 is connected to the drain 321 of the first thin film transistor, and the drain 323 is disposed between the passivation layer 23 and the gate insulating layer 21.
  • the pixel unit may further include a cathode insulating layer 21 and the substrate 1 disposed between The first auxiliary electrode 13 such that the capacitor formed by the first auxiliary electrode 13 and the drain 323 of the third thin film transistor can serve as a charge and discharge element of the pixel unit.
  • the preparation process of the array substrate according to the first embodiment will be described in detail below with reference to FIGS. 1 to 3.
  • the steps of preparing the array substrate according to the first embodiment include:
  • Step 1 Sputter depositing a metal layer on the substrate 1 of the array substrate, such as aluminum (Al), and patterning the deposited metal layer to form the gate line 10 including the gate electrode 11 and the first auxiliary electrode 13;
  • a metal layer on the substrate 1 of the array substrate, such as aluminum (Al)
  • Al aluminum
  • Step 2 depositing a gate insulating layer 21 by using Plasma Enhanced Chemical Vapor Deposition (PEVCD), the material used is, for example, silicon nitride;
  • PEVCD Plasma Enhanced Chemical Vapor Deposition
  • Step 3 depositing a semiconductor layer, for example, depositing amorphous silicon (a-Si) or sputter deposition of Indium Gallium Zinc Oxide (IGZO) by PECVD, and patterning the deposited semiconductor layer to form an active layer Layer 22;
  • a-Si amorphous silicon
  • IGZO Indium Gallium Zinc Oxide
  • Step 4 sputter depositing a metal layer, such as aluminum (Al), and patterning the deposited metal layer to form a data line 30 including the connection portion 31, a source of the first thin film transistor and the second thin film transistor 311, the source 312 of the third thin film transistor, the drain 321 of the first thin film transistor, the drain 322 of the second thin film transistor, and the drain 323 of the third thin film transistor, forming the drain 323 of the third thin film transistor as One pole of the capacitor of the charge and discharge element, and the first auxiliary electrode 13 is the other pole of the capacitor;
  • a metal layer such as aluminum (Al)
  • Step 5 depositing a passivation layer 23, for example, depositing silicon nitride or a coating resin layer by PECVD, and forming a first via hole 361 and a second via hole 362 in the passivation layer 23 to respectively expose the first thin film transistor a drain 321 and a drain 322 of the second thin film transistor;
  • Step 6 Sputtering a transparent metal oxide conductive material layer, such as Indium Tin Oxides (ITO), and patterning the transparent metal oxide conductive material layer to form the first pixel electrode 41 and the second pixel electrode 42.
  • the first pixel electrode 41 is electrically connected to the drain 321 of the first thin film transistor through the first via 361
  • the second pixel electrode 42 is electrically connected to the drain 322 of the second thin film transistor through the second via 362, and is in the A storage capacitor is formed between the auxiliary electrode 13 and the second pixel electrode 42.
  • ITO Indium Tin Oxides
  • gate lines and data lines may be prepared using metal materials such as copper (Cu), aluminum (Al), molybdenum (Mo), titanium (Ti), chromium (Cr), and tungsten (W). Gate lines and data lines can be prepared using alloys of these materials.
  • the gate line may be a single layer structure, or a multilayer structure such as Mo ⁇ Al ⁇ Mo, Ti ⁇ Cu ⁇ Ti, MoTi ⁇ Cu.
  • the gate insulating layer 21 may be formed using silicon nitride or silicon oxide. Further, the gate insulating layer 21 may be a single layer structure or a multilayer structure such as silicon oxide/silicon nitride.
  • the active layer 22 may be amorphous silicon, or an oxide semiconductor;
  • the passivation layer 23 may be an inorganic material such as silicon nitride, or an organic material such as a resin;
  • the electrode 41 and the second pixel electrode 42 are prepared using transparent conductive indium zinc oxide (IZO), ITO or other transparent metal oxide conductive material.
  • the drain 323 of an extremely thin film transistor which is a capacitor of the charge and discharge element, and the other is the first auxiliary electrode 13.
  • the capacitor may function as a domain of one domain region of the pixel unit (eg, a low voltage domain region).
  • the domain region is charged (i.e., the gate line voltage is high)
  • the third thin film transistor is turned off so as not to affect the domain voltage.
  • FIG. 4 is a schematic structural diagram of another array substrate according to Embodiment 2 of the present disclosure.
  • the pixel unit includes a first pixel electrode 41 and a second pixel electrode 42.
  • the gate line 10 is located between the first pixel electrode 41 and the second pixel electrode 42.
  • the pixel unit may include first to fourth thin film transistors.
  • the connection portion 31 of the data line 30 may be connected to the source 311 of the first thin film transistor and the second thin film transistor.
  • the gate line 10 between the first pixel electrode 41 and the second pixel electrode 42 may serve as the common gate 11 of the first to third thin film transistors.
  • the drain 321 of the first thin film transistor may be electrically connected to the first pixel electrode 41 through the first via hole 361 penetrating the passivation layer 23.
  • the drain 322 of the second thin film transistor may be electrically connected to the second pixel electrode 42 through the second via 362 penetrating the passivation layer 23.
  • the connection relationship of the first to third thin film transistors is specifically: the gate 11 of the first thin film transistor is connected to the gate line 10, the source 311 is connected to the data line 30, and the drain 321 passes through the first via 361 and the first pixel electrode. 41 is electrically connected; the gate 11 of the second thin film transistor is connected to the gate line 10, the source 311 is connected to the data line 30, and the drain 322 is electrically connected to the second pixel electrode 42 through the second via 362; the third thin film transistor The gate 11 is connected to the gate line 10, The source 312 is connected to the drain 321 of the first thin film transistor, and the drain 323 is disposed between the passivation layer 23 and the gate insulating layer 21.
  • a second auxiliary electrode 14 disposed between the gate insulating layer 21 and the substrate 1 may be further included in the pixel unit of the array substrate according to the second embodiment, and a diode as a charge and discharge element is realized by the fourth thin film transistor.
  • a storage capacitor may be formed between the second auxiliary electrode 14 and the second pixel electrode 42.
  • the second auxiliary electrode 14 may be disposed in the same layer as the gate 11 of the third thin film transistor.
  • the pixel unit may further include patch layers 43 and 44 disposed on the passivation layer 23.
  • the capping layer 43 connects the gate 15 and the source 325 of the fourth thin film transistor as the first electrode of the diode, and the drain 324 of the fourth thin film transistor serves as the second electrode of the diode, the diode of all the embodiments of the present invention
  • the conduction direction is unidirectional from the first electrode of the diode to the second electrode.
  • the compensation layer 43 may be electrically connected to the gate 15 of the fourth thin film transistor through the third via 363, and may be electrically connected to the source 325 of the fourth thin film transistor through the fourth via 364 to make the fourth thin film transistor
  • the gate 15 is connected to the source 325.
  • the build-up layer 44 can be electrically connected to the drain 324 of the fourth thin film transistor through the fifth via 365, and can be electrically connected to the second auxiliary electrode 14 through the sixth via 366 to make the drain of the fourth thin film transistor
  • the pole 324 is connected to the second auxiliary electrode 14.
  • the gate electrode 15 of the fourth thin film transistor may be formed simultaneously with the second auxiliary electrode 14 and the gate line 10, and the active layer of the fourth thin film transistor may be formed simultaneously with the active layers of the first to third thin film transistors, and the fourth film
  • the source 325 and the drain 324 of the transistor may be formed simultaneously with the source and drain of the first to third thin film transistors, and in particular, the source 325 of the fourth thin film transistor is connected to the drain 323 of the third thin film transistor.
  • the make-up layers 43 and 44 may be formed simultaneously with the first pixel electrode 41 and the second pixel electrode 42 and using the same material.
  • FIG. 5 shows a modified embodiment of the array substrate shown in FIG.
  • the drain layer 324 of the fourth thin film transistor and the third auxiliary electrode 16 are not connected to the build-up layer 44. Thereby, a first capacitance is formed between the drain 324 and the third auxiliary electrode 16 of the fourth thin film transistor, and a storage capacitor is formed between the third auxiliary electrode 16 and the second pixel electrode 42.
  • a diode as a charge and discharge element (implemented by a fourth thin film transistor) and three thin film transistors (ie, first to third thin film transistors) are paired
  • the different domain regions of the pixel unit are charged and discharged.
  • one domain region for example, a low voltage domain region
  • the domain region is unidirectionally discharged by another thin film transistor and the diode, thereby forming high voltage domains having different voltages from each other.
  • the region and the low-voltage domain region enable the liquid crystal molecules to have a plurality of domain regions with different orientations to realize a wide viewing angle display of the liquid crystal, thereby overcoming the defects of the liquid crystal display having a narrow viewing angle in the prior art, and effectively improving the display viewing angle of the liquid crystal display.
  • FIG. 6 is a schematic structural view of another array substrate according to Embodiment 3 of the present disclosure
  • FIG. 7 is a schematic cross-sectional view taken along line C-C' of the array substrate structure shown in FIG. 6.
  • the fourth thin film transistor is implemented as a top gate type thin film transistor.
  • the pixel unit includes a first pixel electrode 41 and a second pixel electrode 42.
  • the gate line 10 is located between the first pixel electrode 41 and the second pixel electrode 42.
  • the pixel unit may include first to fourth thin film transistors. The connection manner between the first thin film transistor and the third thin film transistor and the first pixel electrode, the second pixel electrode, the data line, and the gate line is the same as that of the first embodiment and the second embodiment, and will not be described in detail herein.
  • a second auxiliary electrode 14 disposed between the gate insulating layer 21 and the substrate 1 may be further included in the pixel unit of the array substrate according to the third embodiment, and implemented as a fourth thin film transistor.
  • a storage capacitor may be formed between the second auxiliary electrode 14 and the second pixel electrode 42.
  • the second auxiliary electrode 14 may be disposed in the same layer as the gate 11 of the third thin film transistor.
  • the pixel unit may further include a patch layer 43 disposed on the passivation layer 23.
  • the compensation layer 43 connects the gate 3232 and the source 17 of the fourth thin film transistor as the first electrode of the diode, and the drain 18 of the fourth thin film transistor (ie, a portion of the second auxiliary electrode 14) serves as the second of the diode. electrode.
  • the drain 18 and the source 17 of the fourth thin film transistor may be disposed on the substrate 1 to be covered by the gate insulating layer 21.
  • the make-up layer 43 may be electrically connected to the gate 3232 of the fourth thin film transistor through the third via 363 penetrating the passivation layer 23, and may pass through the fourth via penetrating the passivation layer 23 and the gate insulating layer 21.
  • 364 is electrically coupled to the source 17 of the fourth thin film transistor such that the gate 3232 and the source 17 of the fourth thin film transistor are connected.
  • Step 1 Sputter depositing a metal layer on the substrate 1 of the array substrate, such as aluminum (Al), and patterning the deposited metal layer to form a gate line 10 including the gate electrode 11
  • the drain 18 of the fourth thin film transistor (ie, the second auxiliary electrode 14) and the source 17 of the fourth thin film transistor are further formed by simultaneously forming the N+ amorphous silicon thereon with the drain 18 and the source 17 by a gray scale exposure process. (N+a-Si) layer 25;
  • Step 2 depositing the gate insulating layer 21 by using PEVCD, the material used is, for example, silicon nitride;
  • Step 3 depositing a semiconductor layer, for example, depositing amorphous silicon (a-Si) or sputter deposition of Indium Gallium Zinc Oxide (IGZO) by PECVD, and patterning the deposited semiconductor layer to form an active layer Layer 22, then forming a gate insulating layer 24 on the active layer 22 of the fourth thin film transistor;
  • a-Si amorphous silicon
  • IGZO Indium Gallium Zinc Oxide
  • Step 4 sputter depositing a metal layer, such as aluminum (Al), and patterning the deposited metal layer to form a data line 30 including the connection portion 31, a source of the first thin film transistor and the second thin film transistor 311, the source 312 of the third thin film transistor, the drain 321 of the first thin film transistor, the drain 322 of the second thin film transistor, the drain 323 of the third thin film transistor, and the gate 3232 of the fourth thin film transistor, in particular The drain 323 of the triple thin film transistor is connected to the gate 3232 of the fourth thin film transistor;
  • a metal layer such as aluminum (Al)
  • Step 5 depositing a passivation layer 23, for example, depositing silicon nitride or coating a resin layer by PECVD, forming a first via hole 361 and a second via hole 362 in the passivation layer 23 to respectively expose the drain of the first thin film transistor
  • the drain 322 of the pole 321 and the second thin film transistor form a third via 363 penetrating the passivation layer 23 to expose the gate 3232 of the fourth thin film transistor, and form a through passivation layer 23 and a gate insulating layer 21 a fourth via 364 to expose the source 17 of the fourth thin film transistor;
  • Step 6 Sputtering a transparent metal oxide conductive material layer, such as Indium Tin Oxides (ITO), and patterning the transparent metal oxide conductive material layer to form the first pixel electrode 41 and the second pixel electrode 42.
  • the compensation layer 43 the first pixel electrode 41 is electrically connected to the drain 321 of the first thin film transistor through the first via 361
  • the second pixel electrode 42 is electrically connected to the drain 322 of the second thin film transistor through the second via 362
  • the compensation layer 43 is electrically connected to the gate 3232 and the source 17 of the fourth thin film transistor through the third via 363 and the fourth via 364, respectively, so that the gate 3232 and the source 17 of the fourth thin film transistor are connected.
  • the first electrode of the diode and the drain 18 of the fourth thin film transistor serves as the second electrode of the diode.
  • a diode as a charge and discharge element (implemented by a fourth thin film transistor of a top gate type) and three thin film transistors (ie, first to third thin film crystals)
  • the body tube charges and discharges different domain regions of the pixel unit.
  • one domain region for example, a low voltage domain region
  • the domain region is unidirectionally discharged by another thin film transistor and the diode, thereby forming high voltage domains having different voltages from each other.
  • the region and the low-voltage domain region enable the liquid crystal molecules to have a plurality of domain regions with different orientations to realize a wide viewing angle display of the liquid crystal, thereby overcoming the defects of the liquid crystal display having a narrow viewing angle in the prior art, and effectively improving the display viewing angle of the liquid crystal display.
  • the array substrate of various embodiments of the present disclosure can be applied to a display panel, and particularly can be applied to a liquid crystal display panel.
  • the display panel by adding a charge and discharge element to a pixel unit of the array substrate, charging and discharging different domain regions of the pixel unit using the charge and discharge element and the plurality of thin film transistors, thereby forming high voltage domain regions having different voltages from each other and
  • the low-voltage domain region enables a plurality of domain regions of different orientations of the liquid crystal molecules to realize wide viewing angle display of the liquid crystal, thereby overcoming the defects of narrow viewing angle of the liquid crystal display in the prior art, effectively improving the display viewing angle of the liquid crystal display, and the manufacturing process Compatible with existing manufacturing processes, no equipment costs increase.
  • a display panel including an array substrate according to various embodiments of the present disclosure may be applied to a display device, particularly to a liquid crystal display device.
  • the display device by adding a charge and discharge element to a pixel unit of the array substrate in the display panel, charging and discharging the different domain regions of the pixel unit using the charge and discharge element and the plurality of thin film transistors, thereby forming a voltage different from each other a voltage domain region and a second voltage domain region, so that liquid crystal molecules have a plurality of domain regions with different orientations, so as to realize a wide viewing angle display of the liquid crystal, thereby overcoming the defects of the liquid crystal display having a narrow viewing angle in the prior art, and effectively improving the liquid crystal display.
  • the viewing angle is displayed, and the manufacturing process is compatible with existing manufacturing processes, and no equipment cost is increased.
  • the display device to which the array substrate according to various embodiments of the present disclosure may be applied may be any product having a display function such as an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, or the like. component.
  • a display function such as an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, or the like. component.

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Abstract

一种阵列基板、显示面板及显示装置。所述阵列基板包括：多条数据线（30）和多条栅线（10），所述多条数据线（30）和所述多条栅线（10）定义的多个像素单元，每一像素单元包括第一像素电极（41）、第二像素电极（42），以及至少三个薄膜晶体管，所述像素单元还包括：充放电元件，所述充放电元件与所述至少三个薄膜晶体管中的第三薄膜晶体管对所述像素单元进行充放电，使得该像素单元形成电压不同的第一电压畴区和第二电压畴区。

Description

阵列基板、显示面板及显示装置 技术领域
本申请涉及显示技术领域，具体地，涉及一种阵列基板、显示面板及显示装置。
背景技术
液晶显示器因其具有体积小、重量轻、功耗低、驱动电压低以及无辐射等优点，已广泛应用于电视、手机及公共信息显示等领域，是目前使用最为广泛的显示技术。对于液晶显示器而言，特别是针对大尺寸液晶电视之类的应用而言，要求液晶显示器具有宽阔的视角范围。
在传统的液晶显示器中，主要是利用像素电极和公共电极之间的垂直电场驱动液晶分子偏转。在此情况下，如果在偏离垂直于显示器平面的方向较大的角度下观看，则会存在对比度低、色彩失真的问题，即，存在可视角度(下文中简称为“视角”)狭窄的问题。
为此现有技术中提出了多种显示模式以克服视角过窄缺陷，多种显示模式包括：90°扭曲向列型液晶加补偿膜模式、像素电极图形化垂直排列模式以及利用边缘场的平面驱动模式等。
虽然上述显示模式先后被提出并逐渐实现产业化，但在实际使用中，上述各种显示模式仍然存在缺陷。90°扭曲向列型液晶加补偿膜模式对视角的改善十分有限，一般只应用于笔记本电脑和台式机监视器；像素电极图形化垂直排列模式需要将像素电极制作成复杂的狭缝结构，影响了光利用效率；利用边缘场的平面驱动模式要求工艺控制精度高，制造工艺难度大，且影响对比度。
综上所述，现有技术中用于克服液晶显示视角过窄缺陷的多种显示模式均存在相应的缺陷，无法有效的提高液晶显示器的显示视角。
发明内容
本公开的实施例提供了一种阵列基板、显示面板及显示装置，通过充放电元件和多个薄膜晶体管对像素单元的不同畴区进行充放电，从而形成电压彼此不同的第一电压畴区和第二电压畴区，有效提高液晶显示器的显示视角。
本公开的实施例提供的一种阵列基板，包括：多条数据线和多条栅线，所述多条数据线和所述多条栅线定义的多个像素单元，每一像素单元包括第一像素电极、第二像素电极，以及至少三个薄膜晶体管，所述至少三个薄膜晶体管中的第一薄膜晶体管和第二薄膜晶体管的栅极都连接所述多条栅线中的同一条栅线，所述第一薄膜晶体管和所述第二薄膜晶体管的源极都连接所述多条数据线中的同一条数据线，所述第一薄膜晶体管的漏极连接第一像素电极，所述第二薄膜晶体管的漏极连接第二像素电极，其中，所述像素单元还包括：充放电元件，所述充放电元件与所述至少三个薄膜晶体管中的第三薄膜晶体管对所述像素单元进行充放电，使得所述像素单元形成电压不同的第一电压畴区和第二电压畴区。
根据本公开的实施例提供的上述阵列基板，通过在阵列基板的像素单元中增加充放电元件，使用充放电元件和多个薄膜晶体管对像素单元的不同畴区进行充放电，从而形成电压彼此不同的第一电压畴区和第二电压畴区，使得液晶分子存在多个取向不同的畴区，以实现液晶的宽视角显示，从而克服现有技术中液晶显示视角过窄的缺陷，有效提高液晶显示器的显示视角，而且制作工艺与现有制作工艺兼容，无设备成本增加。
在一种可能的实施方式中，在本公开的实施例提供的上述阵列基板中，所述像素单元还可以包括第一辅助电极，所述充放电元件为电容器，所述至少三个薄膜晶体管为三个薄膜晶体管，所述第三薄膜晶体管的栅极连接所述第一和第二薄膜晶体管的栅极所连接的栅线，所述第三薄膜晶体管的源极连接所述第一像素电极，所述第三薄膜晶体管的漏极连接所述电容器的第一极，所述电容的第二极连接所述第一辅助电极，并且所述第一辅助电极与所述第二像素电极之间形成存储电容。在此情况下，所述第一辅助电极可以与所述第三薄膜晶体管的栅极设置在同一层。
在一种可能的实施方式中，在本公开的实施例提供的上述阵列基板中，所述像素单元还可以包括第二辅助电极，所述充放电元件为二极管，所述第三薄膜晶体管的栅极连接所述第一和第二薄膜晶体管的栅极所连接的栅线，所述第三薄膜晶体管的源极连接所述第一像素电极，所述第三薄膜晶体管的漏极连接所述二极管的第一电极，所述二 极管的第二电极连接所述第二辅助电极，并且所述第二辅助电极与所述第二像素电极之间形成存储电容。在此情况下，所述第二辅助电极可以与所述第三薄膜晶体管的栅极设置在同一层。
在一种可能的实施方式中，在本公开的实施例提供的上述阵列基板中，所述像素单元还可以包括第三辅助电极，所述充放电元件为二极管，所述第三薄膜晶体管的栅极连接所述第一和第二薄膜晶体管的栅极所连接的栅线，所述第三薄膜晶体管的源极连接所述第一像素电极，所述第三薄膜晶体管的漏极连接所述二极管的第一电极，所述二极管的第二电极与所述第三辅助电极之间形成第一电容，并且所述第三辅助电极与所述第二像素电极之间形成存储电容。在此情况下，所述第三辅助电极可以与所述第三薄膜晶体管的栅极设置在同一层。
在一种可能的实施方式中，在本公开的实施例提供的上述阵列基板中，通过第四薄膜晶体管实现所述二极管，所述第四薄膜晶体管的栅极与所述第四薄膜晶体管的源极电连接并且共同做为所述二极管的第一电极，所述第四薄膜晶体管的漏极做为所述二极管的第二电极。
本公开的实施例提供一种包括根据本公开的阵列基板的显示面板。
在一种可能的实施方式中，在本公开的实施例提供的上述显示面板中，所述显示面板可以为液晶显示面板。
根据本公开的实施例提供的上述显示面板，通过在阵列基板的像素单元中增加充放电元件，使用充放电元件和多个薄膜晶体管对像素单元的不同畴区进行充放电，从而形成电压彼此不同的第一电压畴区和第二电压畴区，使得液晶分子存在多个取向不同的畴区，以实现液晶的宽视角显示，从而克服现有技术中液晶显示视角过窄的缺陷，有效提高液晶显示器的显示视角，而且制作工艺与现有制作工艺兼容，无设备成本增加。
本公开的实施例提供一种包括根据本公开的显示面板的显示装置。
在一种可能的实施方式中，在本公开的实施例提供的上述显示装置中，所述显示装置可以为液晶显示装置。
根据本公开的实施例提供的上述显示装置，通过在显示面板中的阵列基板的像素单元中增加充放电元件，使用充放电元件和多个薄膜 晶体管对像素单元的不同畴区进行充放电，从而形成电压彼此不同的第一电压畴区和第二电压畴区，使得液晶分子存在多个取向不同的畴区，以实现液晶的宽视角显示，从而克服现有技术中液晶显示视角过窄的缺陷，有效提高液晶显示器的显示视角，而且制作工艺与现有制作工艺兼容，无设备成本增加。
附图说明
图1为本公开的实施例提供的一种阵列基板的结构示意图；
图2为图1所示阵列基板结构的沿A-A’剖面结构示意图；
图3为图1所示阵列基板结构的沿B-B’剖面结构示意图；
图4至图6为本公开的其他实施例提供的阵列基板的结构示意图；
图7为图6所示阵列基板结构的沿C-C’剖面结构示意图。
具体实施方式
下面结合附图，对本公开的实施例提供的阵列基板、显示面板及显示装置的具体实施方式进行详细地说明。
附图中各膜层的厚度和区域的大小形状不反映阵列基板各部件的真实比例，目的只是示意说明本公开的内容。
本公开的实施例提供的一种阵列基板，包括：多条数据线和多条栅线，所述多条数据线和所述多条栅线定义的多个像素单元，每一像素单元包括第一像素电极、第二像素电极，以及至少三个薄膜晶体管，所述至少三个薄膜晶体管中的第一薄膜晶体管和第二薄膜晶体管的栅极都连接所述多条栅线中的同一条栅线，所述第一薄膜晶体管和所述第二薄膜晶体管的源极都连接所述多条数据线中的同一条数据线，所述第一薄膜晶体管的漏极连接第一像素电极，所述第二薄膜晶体管的漏极连接第二像素电极，其中，所述像素单元还包括：充放电元件，所述充放电元件与所述至少三个薄膜晶体管中的第三薄膜晶体管对所述像素单元进行充放电，使得所述像素单元形成电压不同的第一电压畴区和第二电压畴区。
第一电压畴区和第二电压畴区可以是电压彼此不同的高电压畴区和低电压畴区。当第一电压畴区是高电压畴区时，第二电压畴区为低电压畴区；或者当第一电压畴区为低电压畴区时，第二电压畴区为高 电压畴区。
根据本公开的实施例提供的阵列基板，通过在阵列基板的像素单元中增加充放电元件，使用充放电元件和多个薄膜晶体管对像素单元的不同畴区进行充放电，从而形成电压彼此不同的高电压畴区和低电压畴区，使得液晶分子存在多个取向不同的畴区，以实现液晶的宽视角显示，从而克服现有技术中液晶显示视角过窄的缺陷，有效提高液晶显示器的显示视角，而且制作工艺与现有制作工艺兼容，无设备成本增加。
在不同的具体实现方式中，像素单元中的充放电元件可以是电容器，也可以是二极管或者是其二者的结合。下面结合具体的实施例对本公开的阵列基板结构进行说明。
实施例一
图1为本公开的实施例一提供的一种阵列基板的结构示意图，图2为图1所示阵列基板结构的沿A-A’剖面结构示意图，并且图3为图1所示阵列基板结构的沿B-B’剖面结构示意图。
参考图1至图3，像素单元包括第一像素电极41和第二像素电极42。栅线10位于第一像素电极41与第二像素电极42之间。此外，如图1所示，像素单元可以包括第一薄膜晶体管至第三薄膜晶体管。数据线30的连接部分31可以连接至第一薄膜晶体管和第二薄膜晶体管的源极311。此外，第一像素电极41和第二像素电极42之间的栅线10可以作为各个薄膜晶体管的共用栅极11。第一薄膜晶体管的漏极321可以通过穿透钝化层23的第一过孔361与第一像素电极41电连接。第二薄膜晶体管的漏极322可以通过穿透钝化层23的第二过孔362与第二像素电极42电连接。
第一至第三薄膜晶体管的连接关系具体为：第一薄膜晶体管的栅极11连接至栅线10，源极311连接至数据线30，漏极321通过第一过孔361与第一像素电极41电连接；第二薄膜晶体管的栅极11连接至栅线10，源极311连接至数据线30，漏极322通过第二过孔362与第二像素电极42电连接；第三薄膜晶体管的栅极11连接至栅线10，源极312连接至第一薄膜晶体管的漏极321，漏极323设置在钝化层23和栅极绝缘层21之间。
此外，像素单元还可以包括设置在栅极绝缘层21和衬底1之间的 第一辅助电极13，从而第一辅助电极13与第三薄膜晶体管的漏极323构成的电容器可以作为该像素单元的充放电元件。
下面将参考图1至图3对根据实施例一的阵列基板的制备过程进行详细说明。制备根据实施例一的阵列基板的步骤包括：
步骤一、在阵列基板的衬底1上溅射沉积金属层，该金属层例如铝(Al)，并对沉积的金属层进行图案化以形成包括栅极11的栅线10和第一辅助电极13；
步骤二、采用等离子体增强化学气相沉积法(Plasma Enhanced Chemical Vapor Deposition，PEVCD)沉积栅极绝缘层21，所用材料例如是氮化硅；
步骤三、沉积半导体层，例如采用PECVD沉积非晶硅(a-Si)或溅射沉积铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)，并对沉积的半导体层进行图案化以形成有源层22；
步骤四、溅射沉积金属层，该金属层例如铝(Al)，并对沉积的金属层进行图案化以形成包括连接部分31的数据线30、第一薄膜晶体管和第二薄膜晶体管的源极311、第三薄膜晶体管的源极312、第一薄膜晶体管的漏极321、第二薄膜晶体管的漏极322和第三薄膜晶体管的漏极323，将第三薄膜晶体管的漏极323形成为作为充放电元件的电容器的一极，而第一辅助电极13为该电容器的另一极；
步骤五、沉积钝化层23，例如采用PECVD沉积氮化硅或涂覆树脂层，并在钝化层23中形成第一过孔361和第二过孔362以分别暴露出第一薄膜晶体管的漏极321和第二薄膜晶体管的漏极322；以及
步骤六、溅射透明金属氧化物导电材料层，例如氧化铟锌(Indium Tin Oxides，ITO)，并对透明金属氧化物导电材料层进行图案化以形成第一像素电极41和第二像素电极42，第一像素电极41通过第一过孔361与第一薄膜晶体管的漏极321电连接，第二像素电极42通过第二过孔362与第二薄膜晶体管的漏极322电连接，并且在第一辅助电极13与第二像素电极42之间形成存储电容。
根据本公开的各个实施例，可以采用铜(Cu)，铝(Al)，钼(Mo)，钛(Ti)，铬(Cr)，钨(W)等金属材料制备栅线和数据线，也可以采用这些材料的合金制备栅线和数据线。此外，栅线可以是单层结构，也可以采用多层结构，例如Mo\Al\Mo，Ti\Cu\Ti，MoTi\Cu。
根据本公开的各个实施例，可以采用氮化硅或氧化硅制备栅极绝缘层21。此外，栅极绝缘层21可以是单层结构，也可以是多层结构，例如氧化硅\氮化硅。
根据本公开的各个实施例，有源层22可以采用非晶硅，或氧化物半导体；钝化层23可以采用无机物(例如氮化硅)，也可以采用有机物(例如树脂)；第一像素电极41和第二像素电极42采用透明导电的氧化铟锌(IZO)、ITO或其他透明金属氧化物导电材料制备。
根据本公开的实施例一，作为充放电元件的电容器的一极为第三薄膜晶体管的漏极323，另一极为第一辅助电极13。该电容器可以为像素单元的一个畴区(例如，低电压畴区)起分压作用。在对该畴区进行充电(即，栅线电压为高电平)时，需要额外对该电容器进行充电，从而减小了该畴区的电压。当栅线电压为低电平时，第三薄膜晶体管断开，从而不会对畴区电压产生影响。因此，形成了电压彼此不同的高电压畴区和低电压畴区，使得液晶分子存在多个取向不同的畴区，以实现液晶的宽视角显示，从而克服现有技术中液晶显示视角过窄的缺陷，有效提高液晶显示器的显示视角。
实施例二
图4为本公开的实施例二提供的另一阵列基板的结构示意图。
参考图4，像素单元包括第一像素电极41和第二像素电极42。栅线10位于第一像素电极41与第二像素电极42之间。此外，如图4所示，像素单元可以包括第一薄膜晶体管至第四薄膜晶体管。数据线30的连接部分31可以连接至第一薄膜晶体管和第二薄膜晶体管的源极311。此外，第一像素电极41和第二像素电极42之间的栅线10可以作为第一薄膜晶体管至第三薄膜晶体管的共用栅极11。第一薄膜晶体管的漏极321可以通过穿透钝化层23的第一过孔361与第一像素电极41电连接。第二薄膜晶体管的漏极322可以通过穿透钝化层23的第二过孔362与第二像素电极42电连接。
第一至第三薄膜晶体管的连接关系具体为：第一薄膜晶体管的栅极11连接至栅线10，源极311连接至数据线30，漏极321通过第一过孔361与第一像素电极41电连接；第二薄膜晶体管的栅极11连接至栅线10，源极311连接至数据线30，漏极322通过第二过孔362与第二像素电极42电连接；第三薄膜晶体管的栅极11连接至栅线10， 源极312连接至第一薄膜晶体管的漏极321，漏极323设置在钝化层23和栅极绝缘层21之间。
在根据实施例二的阵列基板的像素单元中还可以包括设置在栅极绝缘层21和衬底1之间的第二辅助电极14，并且通过第四薄膜晶体管来实现作为充放电元件的二极管。在第二辅助电极14与第二像素电极42之间可以形成存储电容。在此情况下，第二辅助电极14可以与所述第三薄膜晶体管的栅极11设置在同一层。
像素单元还可以包括设置在钝化层23上的补搭层43和44。补搭层43使得第四薄膜晶体管的栅极15和源极325相连作为二极管的第一电极，并且第四薄膜晶体管的漏极324作为二极管的第二电极，本发明所有实施例中的二极管的导通方向都是从二极管的第一电极到第二电极单向导通的。补搭层43可以通过第三过孔363与第四薄膜晶体管的栅极15电连接，并且可以通过第四过孔364与第四薄膜晶体管的源极325电连接，以便使得第四薄膜晶体管的栅极15和源极325相连。
此外，补搭层44可以通过第五过孔365与第四薄膜晶体管的漏极324电连接，并且可以通过第六过孔366与第二辅助电极14电连接，以便使得第四薄膜晶体管的漏极324和第二辅助电极14相连。
第四薄膜晶体管的栅极15可以与第二辅助电极14和栅线10同时形成，第四薄膜晶体管的有源层可以与第一至第三薄膜晶体管的有源层同时形成，并且第四薄膜晶体管的源极325和漏极324可以与第一至第三薄膜晶体管的源极和漏极同时形成，特别地第四薄膜晶体管的源极325与第三薄膜晶体管的漏极323相连。此外，补搭层43和44可以与第一像素电极41和第二像素电极42同时并且采用相同的材料形成。
图5示出了图4所示的阵列基板的修改实施例。
参考图5，在图5所示的修改实施例中不包括使第四薄膜晶体管的漏极324和第三辅助电极16(对应于图4中的第二辅助电极14)相连补搭层44。从而第四薄膜晶体管的漏极324和第三辅助电极16之间形成第一电容，同时第三辅助电极16与第二像素电极42之间形成存储电容。
根据本公开的实施例二，作为充放电元件的二极管(通过第四薄膜晶体管实现)与三个薄膜晶体管(即，第一至第三薄膜晶体管)对 像素单元的不同畴区进行充放电。例如，一个畴区(例如，低电压畴区)用一个薄膜晶体管来进行充放电，并且用另一个薄膜晶体管及该二极管对该畴区进行单向放电，从而形成了电压彼此不同的高电压畴区和低电压畴区，使得液晶分子存在多个取向不同的畴区，以实现液晶的宽视角显示，从而克服现有技术中液晶显示视角过窄的缺陷，有效提高液晶显示器的显示视角。
实施例三
图6为本公开的实施例三提供的另一阵列基板的结构示意图，图7为图6所示阵列基板结构的沿C-C’剖面结构示意图。与图4和图5所示的实施例中第四薄膜晶体管为底栅结构不同，在图6和图7所示的实施例中，第四薄膜晶体管实现为顶栅型薄膜晶体管。
参考图6和图7，像素单元包括第一像素电极41和第二像素电极42。栅线10位于第一像素电极41与第二像素电极42之间。此外，如图6所示，像素单元可以包括第一薄膜晶体管至第四薄膜晶体管。第一薄膜晶体管到第三薄膜晶体管与第一像素电极、第二像素电极、数据线、栅线之间的连接方式与实施例一和二相同，此处不再详细描述。
如图7所示，在根据实施例三的阵列基板的像素单元中还可以包括设置在栅极绝缘层21和衬底1之间的第二辅助电极14，并且通过第四薄膜晶体管来实现作为充放电元件的二极管。在第二辅助电极14与第二像素电极42之间可以形成存储电容。在此情况下，第二辅助电极14可以与所述第三薄膜晶体管的栅极11设置在同一层。
像素单元还可以包括设置在钝化层23上的补搭层43。补搭层43使得第四薄膜晶体管的栅极3232和源极17相连作为二极管的第一电极，并且第四薄膜晶体管的漏极18(即，第二辅助电极14的一部分)作为二极管的第二电极。第四薄膜晶体管的漏极18和源极17可以设置在衬底1上以被栅极绝缘层21覆盖。补搭层43可以通过穿透钝化层23的第三过孔363与第四薄膜晶体管的栅极3232电连接，并且可以通过穿透钝化层23和栅极绝缘层21的第四过孔364与第四薄膜晶体管的源极17电连接，以便使得第四薄膜晶体管的栅极3232和源极17相连。
步骤一、在阵列基板的衬底1上溅射沉积金属层，该金属层例如铝(Al)，并对沉积的金属层进行图案化以形成包括栅极11的栅线10、 第四薄膜晶体管的漏极18(即，第二辅助电极14)以及第四薄膜晶体管的源极17，此外通过灰阶曝光工艺与漏极18和源极17同时形成其上的N+非晶硅(N+a-Si)层25；
步骤二、采用PEVCD沉积栅极绝缘层21，所用材料例如是氮化硅；
步骤三、沉积半导体层，例如采用PECVD沉积非晶硅(a-Si)或溅射沉积铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)，并对沉积的半导体层进行图案化以形成有源层22，之后在第四薄膜晶体管的有源层22上形成栅极绝缘层24；
步骤四、溅射沉积金属层，该金属层例如铝(Al)，并对沉积的金属层进行图案化以形成包括连接部分31的数据线30、第一薄膜晶体管和第二薄膜晶体管的源极311、第三薄膜晶体管的源极312、第一薄膜晶体管的漏极321、第二薄膜晶体管的漏极322、第三薄膜晶体管的漏极323和第四薄膜晶体管的栅极3232，特别地第三薄膜晶体管的漏极323与第四薄膜晶体管的栅极3232相连；
步骤五、沉积钝化层23，例如采用PECVD沉积氮化硅或涂覆树脂层，在钝化层23中形成第一过孔361和第二过孔362以分别暴露出第一薄膜晶体管的漏极321和第二薄膜晶体管的漏极322，形成穿透钝化层23的第三过孔363以露出第四薄膜晶体管的栅极3232，并且形成穿透钝化层23和栅极绝缘层21的第四过孔364以露出第四薄膜晶体管的源极17；以及
步骤六、溅射透明金属氧化物导电材料层，例如氧化铟锌(Indium Tin Oxides，ITO)，并对透明金属氧化物导电材料层进行图案化以形成第一像素电极41、第二像素电极42和补搭层43，第一像素电极41通过第一过孔361与第一薄膜晶体管的漏极321电连接，第二像素电极42通过第二过孔362与第二薄膜晶体管的漏极322电连接，补搭层43通过第三过孔363和第四过孔364分别与第四薄膜晶体管的栅极3232和源极17电连接，以使得第四薄膜晶体管的栅极3232和源极17相连作为二极管的第一电极，并且第四薄膜晶体管的漏极18作为二极管的第二电极。
根据本公开的实施例三，作为充放电元件的二极管(通过顶栅型的第四薄膜晶体管实现)与三个薄膜晶体管(即，第一至第三薄膜晶 体管)对像素单元的不同畴区进行充放电。例如，一个畴区(例如，低电压畴区)用一个薄膜晶体管来进行充放电，并且用另一个薄膜晶体管及该二极管对该畴区进行单向放电，从而形成了电压彼此不同的高电压畴区和低电压畴区，使得液晶分子存在多个取向不同的畴区，以实现液晶的宽视角显示，从而克服现有技术中液晶显示视角过窄的缺陷，有效提高液晶显示器的显示视角。
本公开的各个实施例的阵列基板可以应用于显示面板，特别地可以应用于液晶显示面板。在该显示面板中，通过在阵列基板的像素单元中增加充放电元件，使用充放电元件和多个薄膜晶体管对像素单元的不同畴区进行充放电，从而形成电压彼此不同的高电压畴区和低电压畴区，使得液晶分子存在多个取向不同的畴区，以实现液晶的宽视角显示，从而克服现有技术中液晶显示视角过窄的缺陷，有效提高液晶显示器的显示视角，而且制作工艺与现有制作工艺兼容，无设备成本增加。
包括根据本公开的各个实施例的阵列基板的显示面板可以应用于显示装置，特别地可以应用于液晶显示装置。在该显示装置中，通过在显示面板中的阵列基板的像素单元中增加充放电元件，使用充放电元件和多个薄膜晶体管对像素单元的不同畴区进行充放电，从而形成电压彼此不同的第一电压畴区和第二电压畴区，使得液晶分子存在多个取向不同的畴区，以实现液晶的宽视角显示，从而克服现有技术中液晶显示视角过窄的缺陷，有效提高液晶显示器的显示视角，而且制作工艺与现有制作工艺兼容，无设备成本增加。
可应用根据本公开的各个实施例的阵列基板的显示装置可以为：电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
显然，本领域的技术人员可以对本公开的进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本申请的权利要求及其等同技术的范围之内，则本申请也意图包含这些改动和变型在内。

Claims (12)

  1. 一种阵列基板，包括：多条数据线和多条栅线，所述多条数据线和所述多条栅线定义的多个像素单元，每一像素单元包括第一像素电极、第二像素电极，以及至少三个薄膜晶体管，所述至少三个薄膜晶体管中的第一薄膜晶体管和第二薄膜晶体管的栅极都连接所述多条栅线中的同一条栅线，所述第一薄膜晶体管和所述第二薄膜晶体管的源极都连接所述多条数据线中的同一条数据线，所述第一薄膜晶体管的漏极连接第一像素电极，所述第二薄膜晶体管的漏极连接第二像素电极，其中，
    所述像素单元还包括：充放电元件，所述充放电元件与所述至少三个薄膜晶体管中的第三薄膜晶体管对所述像素单元进行充放电，使得所述像素单元形成电压不同的第一电压畴区和第二电压畴区。
  2. 根据权利要求1所述的阵列基板，其中，所述像素单元还包括第一辅助电极，所述充放电元件为电容器，所述至少三个薄膜晶体管为三个薄膜晶体管，所述第三薄膜晶体管的栅极连接所述第一和第二薄膜晶体管的栅极所连接的栅线，所述第三薄膜晶体管的源极连接所述第一像素电极，所述第三薄膜晶体管的漏极连接所述电容器的第一极，
    所述电容的第二极连接所述第一辅助电极，并且所述第一辅助电极与所述第二像素电极之间形成存储电容。
  3. 根据权利要求2所述的阵列基板，其中，所述第一辅助电极与所述第三薄膜晶体管的栅极设置在同一层。
  4. 根据权利要求1所述的阵列基板，其中，所述像素单元还包括第二辅助电极，所述充放电元件为二极管，所述第三薄膜晶体管的栅极连接所述第一和第二薄膜晶体管的栅极所连接的栅线，所述第三薄膜晶体管的源极连接所述第一像素电极，所述第三薄膜晶体管的漏极连接所述二极管的第一电极，所述二极管的第二电极连接所述第二辅助电极，并且所述第二辅助电极与所述第二像素电极之间形成存储电容。
  5. 根据权利要求4所述的阵列基板，其中，所述第二辅助电极与所述第三薄膜晶体管的栅极设置在同一层。
  6. 根据权利要求1所述的阵列基板，其中，所述像素单元还包括第三辅助电极，所述充放电元件为二极管，所述第三薄膜晶体管的栅极连接所述第一和第二薄膜晶体管的栅极所连接的栅线，所述第三薄膜晶体管的源极连接所述第一像素电极，所述第三薄膜晶体管的漏极连接所述二极管的第一电极，所述二极管的第二电极与所述第三辅助电极之间形成第一电容，并且所述第三辅助电极与所述第二像素电极之间形成存储电容。
  7. 根据权利要求6所述的阵列基板，其中，所述第三辅助电极与所述第三薄膜晶体管的栅极设置在同一层。
  8. 根据权利要求4或6所述的阵列基板，其中，通过第四薄膜晶体管实现所述二极管，所述第四薄膜晶体管的栅极与所述第四薄膜晶体管的源极电连接并且共同做为所述二极管的第一电极，所述第四薄膜晶体管的漏极做为所述二极管的第二电极。
  9. 一种显示面板，包括权利要求1-8中任一项所述的阵列基板。
  10. 根据权利要求9所述的显示面板，其中，所述显示面板为液晶显示面板。
  11. 一种显示装置，包括权利要求9或10所述的显示面板。
  12. 根据权利要求11所述的显示装置，其中，所述显示装置为液晶显示装置。
PCT/CN2015/080456 2014-10-27 2015-06-01 阵列基板、显示面板及显示装置 WO2016065898A1 (zh)

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