WO2016056887A1 - Humidity sensor with nanoporous polyimide membranes and a method of fabrication thereof - Google Patents

Humidity sensor with nanoporous polyimide membranes and a method of fabrication thereof Download PDF

Info

Publication number
WO2016056887A1
WO2016056887A1 PCT/MY2015/000083 MY2015000083W WO2016056887A1 WO 2016056887 A1 WO2016056887 A1 WO 2016056887A1 MY 2015000083 W MY2015000083 W MY 2015000083W WO 2016056887 A1 WO2016056887 A1 WO 2016056887A1
Authority
WO
WIPO (PCT)
Prior art keywords
polyimide
nanoporous
membrane
humidity sensor
substrate
Prior art date
Application number
PCT/MY2015/000083
Other languages
French (fr)
Inventor
Wai Yee Lee
Nabipoor MOHESN
Bin Saharudin SUHAIRI
Bien Chia Sheng Daniel
Binti Sulaiman SURAYA
Binti Zakaria ANIFAH
Original Assignee
Mimos Berhad
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos Berhad filed Critical Mimos Berhad
Publication of WO2016056887A1 publication Critical patent/WO2016056887A1/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G01N27/223Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
    • G01N27/225Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity by using hygroscopic materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites

Definitions

  • the present invention relates to an improved humidity sensor with nanoporous polyimide membrane as the sensing element more particularly, to a humidity sensor and method of fabricating the humidity sensor with polyimide membrane to improve sensor's response to changes in environmental humidity.
  • Measurement of relative humidity by measuring the variation in impedance is the most frequently used, since it is the easiest to implement.
  • a first category concerns sensors of a variation in resistance, in which the variation in conductivity of a surface is measured.
  • Sensors of capacitive type can also be distinguished, in which a layer of sensitive dielectric material is provided to absorb surrounding humidity. In said sensor, the layer of dielectric material is located between two electrodes and forms a capacitor. When humidity varies, the quantity of water absorbed by said layer of dielectric material also varies, leading to a change in the dielectric constant of this layer, and to a variation in the capacitance of the capacitor which is measured.
  • one of the electrodes may be permeable to humidity, to allow the water vapour to migrate into the layer of dielectric material of the capacitor.
  • polyimide based capacitive humidity sensor comprises of interdigital electrodes with planar polyimide membrane as its sensing element.
  • moisture absorption and desorption in and out of the polyimide membrane has impacting the device response time particularly if the membrane is thick.
  • the present invention provides an improved humidity sensor with nanoporous polyimide membrane as the sensing element more particularly, to a humidity sensor and method of fabricating the humidity sensor with polyimide membrane to improve sensor's response to changes in environmental humidity.
  • the present invention further provides a considerable reduction of materials with even greater efficiency and economically during operation.
  • the present invention provides a method of fabricating a capacitive humidity sensor having nanoporous polyimide membranes comprising depositing an insulating layer as an electrical isolation layer on a substrate and sandwiched between a plurality of conductive electrodes and the substrate forming a first polyimide sensing membrane by depositing a first polyimide layer on top of the insulating layer, etching the deposited conductive layer on top of the first polyimide sensing membrane to form a plurality of interdigital capacitive electrodes, growing a plurality of silicon nanowires, depositing a second polyimide sensing membrane on top of the conductive electrodes, planarising the silicon nanowires coated with the second polyimide sensing membrane and removing the silicon nanowires to form a plurality of nanopores on the second polyimide sensing membrane.
  • the polyimide sensing membranes are provided to capture a fringing electric field beneath the interdigital capacitive electrodes.
  • the silicon nanowires are grown by plasma enhanced chemical vapor deposition via a thin layer of metal catalyst.
  • the coated silicon nanowires are planarised by a chemical mechanical polishing (CMP) method.
  • CMP chemical mechanical polishing
  • the silicon nanowires are removed by wet etching with potassium hydroxide solution.
  • a capacitive humidity sensor comprises a substrate, an insulating layer as an electrical isolation layer is deposited on the substrate and sandwiched between a plurality of conductive electrodes and the substrate; and a plurality of an array of interdigital capacitive electrodes as sensing elements placed on the insulating layer and sandwiched between a first nanoporous polyimide membrane and a second nanoporous polyimide membrane wherein each nanoporous polyimide membrane changes its dielectric permittivity when different relative humidity levels are detected.
  • a depth of the nanoporous of each nanoporous polyimide membrane is 0.5 ⁇ to 5 ⁇ .
  • a diameter of nanoporous of the polyimide membrane is in the range of 10 nm to 200 nm.
  • a capacitive humidity sensor comprises a substrate, an insulating layer as an electrical isolation layer is deposited on the substrate and sandwiched between a plurality of conductive electrodes and the substrate; and a plurality of an array of interdigital capacitive electrodes as sensing elements placed on the insulating layer and below a nanoporous polyimide membrane wherein the nanoporous polyimide membrane changes its dielectric permittivity when different relative humidity levels are detected.
  • Figure 1 illustrates 3-dimensional view of capacitive humidity sensor with nanoporous polyimide membranes in accordance of the present invention.
  • Figure 2 illustrates a flow chart depicts the fabrication of the capacitive humidity sensor and formation of the nanoporous membrane in accordance of the present invention.
  • Figure 3 illustrates interdigital electrode structure embedded in the capacitive humidity sensor in accordance of the present invention.
  • Figure 4 illustrates capacitive humidity sensor formation process flow as in Figure 2 in accordance of the present invention.
  • FIG. 5 illustrates capacitive humidity sensor with single layer nanoporous polyimide on top of the electrode surface in accordance to an alternative embodiment of the present invention.
  • nanowire refers to nanoscale material created in an array pore. The term does not imply that the aspect ratio of the material need to be high, and in some embodiments, the material to be deposited in an array can have a low aspect ratio. “Nanowires” can also refer to material that is not necessarily electrically conductive, but is nevertheless useful when present in nanoscale arrays. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Although methods and materials similar or equivalent to those described herein can be used in the practice or testing of the present invention, suitable methods and materials are described below.
  • the present invention provides an improved humidity sensor device with nanoporous polyimide membrane as the sensing element.
  • the increased in porosity enhances moisture absorption and desorption from the polyimide membrane to improve device response to changes in environmental humidity.
  • a depth of the nanoporous of each nanoporous polyimide membrane is 0.5 ⁇ to 5 ⁇ while a diameter of nanoporous of the polyimide membrane is in the range of 10 nm to 200 nm.
  • the nanopores in each nanoporous polyimide membrane are provided to improve the adsorption and desorption of water moisture from the polyimide membrane to improve device response to changes in environmental humidity. Dimensions of the nanopores can be accurately controlled with the use of silicon nanowires.
  • the formation of nanoporous membrane comprises the growth of vertical silicon nanowires and selective etching of silicon where diameter of the pores is dependent on the diameter of the grown silicon nanowires, which is typically less than 100nm.
  • the conductive electrodes preferably metal electrode materials are required to withstand the silicon nanowire growth temperature of at least 350 °C.
  • Figure 2 illustrates a flow chart depicts the fabrication of the capacitive humidity sensor and formation of the nanoporous membrane in accordance of the present invention.
  • Figure 4 illustrates capacitive humidity sensor formation process flow in accordance of the present invention.
  • a method of fabricating a capacitive humidity sensor having nanoporous polyimide membranes begins with depositing an insulating layer as an electrical isolation layer on a substrate (210; 212) ( Figure 4a) and sandwiched between a plurality of conductive electrodes and the substrate. This is followed by forming a first polyimide sensing membrane (214) by depositing a first polyimide layer on top of the insulating layer ( Figure 4b).
  • the deposited conductive layer on top of the first polyimide sensing membrane to form a plurality of interdigital capacitive electrodes is etched (216) ( Figure 4c).
  • a plurality of silicon nanowires are grown (218).
  • the silicon nanowires are grown by plasma enhanced chemical vapor deposition via a thin layer of metal catalyst ( Figure 4d).
  • a second polyimide sensing membrane is deposited on top of the conductive electrodes (220) ( Figure 4e) and this is followed by planarising the silicon nanowires coated with the second polyimide sensing membrane (222) ( Figure 4f).
  • the coated silicon nanowires are planarised by a chemical mechanical polishing (CMP) method.
  • CMP chemical mechanical polishing
  • the silicon nanowires are removed to form a plurality of nanopores on the second polyimide sensing membrane (224) ( Figure 4g). These silicon nanowires are removed by wet etching with potassium hydroxide solution.
  • the polyimide sensing membranes are provided in the present invention to capture a fringing electric field beneath the interdigital capacitive electrodes.
  • Interdigitated capacitor has been widely incorporated with dielectric sensing membrane for chemical sensing applications.
  • the physical structure of the device comprises of a sensing membrane sitting on top of an array of interdigitated fingers.
  • Figure 3 depicts interdigital electrode structure (310) embedded in the capacitive humidity sensor in accordance of the present invention.
  • the sensing mechanism is based on the dielectric properties of membrane material which includes physical, chemical, or structural properties influencing the fringing electric field between the finger electrodes resulting in a change in capacitance.
  • nanoporous membranes and not limited to the following highly selective transfer mask, a filter for biochemical, biomedical and material studies; sensing membrane layer; anti-reflection surface for solar cells; and as photonic crystals.
  • nonporous membranes are fabricated using lithographic methods which have resolution and cost imposed limitations; or by using material(s) that is able to change its chemical structure.
  • applications for such materials are limited and the processing methods are not compatible with the flow of semiconductor device fabrication.
  • nanoporous polyimide membrane which less than 100nm in dimension is fabricated by utilizing silicon nanowires and a combination of selective etching methods.
  • the nanoporous polyimide membrane can be fabricated onto silicon, glass, metal or polymer type substrate as long as it can withstand the growth temperature of the silicon nanowires, which is typically above 350 °C. Diameter of the pores can be accurately controlled as they are directly dependent on the diameter of the grown silicon nanowires which in turns is dependent on the thickness of the metal catalyst used.
  • the height of the nanopores there are of high aspect ratio and is dependent on the thickness of the membrane material which typically ranges up to 5 ⁇ .
  • capacitive humidity sensor with single layer nanoporous polyimide on top of the electrode surface in accordance to an alternative embodiment of the present invention is provided as depicted in Figure 5.
  • the methodof fabricating a capacitive humidity sensor having single layer nanoporous polyimide is the same with the present method with the difference in not depositing/forming the bottom polyimide layer.
  • One of the advantages of the present invention is that it enhances moisture absorption and desorption from the polyimide membrane to improve device response to changes in environmental humidity.
  • Another advantage of the system and method of the present invention is that the formation of nanopores is independent of lithographic resolution.
  • diameter of the pores can be accurately controlled as they are directly dependent on the diameter of the grown silicon nanowires which in turns is dependent on the thickness of the metal catalyst used.

Abstract

The present invention relates to an improved humidity sensor (100) with nanoporous polyimide membrane as the sensing element more particularly, to a humidity sensor and method of fabricating the humidity sensor (100) with polyimide membrane to improve sensor's response to changes in environmental humidity. One of the advantages of the present invention is that it enhances moisture absorption and desorption from the polyimide membrane to improve device response to changes in environmental humidity. Another advantage of the system and method of the present invention is that the formation of nanopores is independent of lithographic resolution. In addition, diameter of the pores can be accurately controlled as they are directly dependent on the diameter of the grown silicon nanowires which in turns is dependent on the thickness of the metal catalyst used.

Description

HUMIDITY SENSOR WITH NANOPOROUS POLYIMIDE MEMBRANES AND A METHOD
OF FABRICATION THEREOF
FIELD OF THE INVENTION
The present invention relates to an improved humidity sensor with nanoporous polyimide membrane as the sensing element more particularly, to a humidity sensor and method of fabricating the humidity sensor with polyimide membrane to improve sensor's response to changes in environmental humidity.
BACKGROUND OF THE INVENTION
Measurement of relative humidity by measuring the variation in impedance is the most frequently used, since it is the easiest to implement. In particular, there are two categories of sensors measuring variation in impedance. A first category concerns sensors of a variation in resistance, in which the variation in conductivity of a surface is measured. Sensors of capacitive type can also be distinguished, in which a layer of sensitive dielectric material is provided to absorb surrounding humidity. In said sensor, the layer of dielectric material is located between two electrodes and forms a capacitor. When humidity varies, the quantity of water absorbed by said layer of dielectric material also varies, leading to a change in the dielectric constant of this layer, and to a variation in the capacitance of the capacitor which is measured.
In a humidity sensor of capacitive type, one of the electrodes may be permeable to humidity, to allow the water vapour to migrate into the layer of dielectric material of the capacitor. At present, polyimide based capacitive humidity sensor comprises of interdigital electrodes with planar polyimide membrane as its sensing element. However, moisture absorption and desorption in and out of the polyimide membrane has impacting the device response time particularly if the membrane is thick.
To date, none of these technologies can improve sensitivity, selectivity and response time towards measuring relative humidity polyimide based capacitive humidity sensor. The present invention provides an improved humidity sensor with nanoporous polyimide membrane as the sensing element more particularly, to a humidity sensor and method of fabricating the humidity sensor with polyimide membrane to improve sensor's response to changes in environmental humidity. The present invention further provides a considerable reduction of materials with even greater efficiency and economically during operation.
SUMMARY OF THE INVENTION The present invention provides a method of fabricating a capacitive humidity sensor having nanoporous polyimide membranes comprising depositing an insulating layer as an electrical isolation layer on a substrate and sandwiched between a plurality of conductive electrodes and the substrate forming a first polyimide sensing membrane by depositing a first polyimide layer on top of the insulating layer, etching the deposited conductive layer on top of the first polyimide sensing membrane to form a plurality of interdigital capacitive electrodes, growing a plurality of silicon nanowires, depositing a second polyimide sensing membrane on top of the conductive electrodes, planarising the silicon nanowires coated with the second polyimide sensing membrane and removing the silicon nanowires to form a plurality of nanopores on the second polyimide sensing membrane.
In one of the embodiment of the present invention, the polyimide sensing membranes are provided to capture a fringing electric field beneath the interdigital capacitive electrodes.
In yet another embodiment of the present invention, the silicon nanowires are grown by plasma enhanced chemical vapor deposition via a thin layer of metal catalyst.
In another embodiment of the present invention, the coated silicon nanowires are planarised by a chemical mechanical polishing (CMP) method. In yet another embodiment of the present invention, the silicon nanowires are removed by wet etching with potassium hydroxide solution.
A capacitive humidity sensor comprises a substrate, an insulating layer as an electrical isolation layer is deposited on the substrate and sandwiched between a plurality of conductive electrodes and the substrate; and a plurality of an array of interdigital capacitive electrodes as sensing elements placed on the insulating layer and sandwiched between a first nanoporous polyimide membrane and a second nanoporous polyimide membrane wherein each nanoporous polyimide membrane changes its dielectric permittivity when different relative humidity levels are detected.
In another embodiment of the present invention, a depth of the nanoporous of each nanoporous polyimide membrane is 0.5 μιη to 5 μπι.
In yet another embodiment of the present invention, a diameter of nanoporous of the polyimide membrane is in the range of 10 nm to 200 nm.
A capacitive humidity sensor comprises a substrate, an insulating layer as an electrical isolation layer is deposited on the substrate and sandwiched between a plurality of conductive electrodes and the substrate; and a plurality of an array of interdigital capacitive electrodes as sensing elements placed on the insulating layer and below a nanoporous polyimide membrane wherein the nanoporous polyimide membrane changes its dielectric permittivity when different relative humidity levels are detected.
BRIEF DESCRIPTION OF THE DRAWINGS
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
Figure 1 illustrates 3-dimensional view of capacitive humidity sensor with nanoporous polyimide membranes in accordance of the present invention.
Figure 2 illustrates a flow chart depicts the fabrication of the capacitive humidity sensor and formation of the nanoporous membrane in accordance of the present invention.
Figure 3 illustrates interdigital electrode structure embedded in the capacitive humidity sensor in accordance of the present invention. Figure 4 illustrates capacitive humidity sensor formation process flow as in Figure 2 in accordance of the present invention.
Figure 5 illustrates capacitive humidity sensor with single layer nanoporous polyimide on top of the electrode surface in accordance to an alternative embodiment of the present invention.
DETAILED DESCRIPTIONS OF THE INVENTION
The present invention will now be described in detail in connection with specific embodiments with reference to the accompanying drawings.
As used herein the term "nanowire" refers to nanoscale material created in an array pore. The term does not imply that the aspect ratio of the material need to be high, and in some embodiments, the material to be deposited in an array can have a low aspect ratio. "Nanowires" can also refer to material that is not necessarily electrically conductive, but is nevertheless useful when present in nanoscale arrays. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Although methods and materials similar or equivalent to those described herein can be used in the practice or testing of the present invention, suitable methods and materials are described below
The present invention provides an improved humidity sensor device with nanoporous polyimide membrane as the sensing element. The increased in porosity enhances moisture absorption and desorption from the polyimide membrane to improve device response to changes in environmental humidity.
Figure 1 illustrates a capacitive humidity sensor (100) of the present invention comprises a substrate (110), an insulating layer (112) as an electrical isolation layer is deposited on the substrate and sandwiched between a plurality of conductive electrodes (114) and the substrate (110); and a plurality of an array of interdigital capacitive electrodes (116) as sensing elements placed on the insulating layer (112) and sandwiched between a first nanoporous polyimide membrane (118) and a second nanoporous polyimide membrane (118) wherein each nanoporous polyimide membrane changes its dielectric permittivity when different relative humidity levels are detected.
In the preferred embodiment, a depth of the nanoporous of each nanoporous polyimide membrane is 0.5 μιη to 5 μιτι while a diameter of nanoporous of the polyimide membrane is in the range of 10 nm to 200 nm. The nanopores in each nanoporous polyimide membrane are provided to improve the adsorption and desorption of water moisture from the polyimide membrane to improve device response to changes in environmental humidity. Dimensions of the nanopores can be accurately controlled with the use of silicon nanowires.
To a person skilled in the art, the formation of nanoporous membrane comprises the growth of vertical silicon nanowires and selective etching of silicon where diameter of the pores is dependent on the diameter of the grown silicon nanowires, which is typically less than 100nm. The conductive electrodes preferably metal electrode materials are required to withstand the silicon nanowire growth temperature of at least 350 °C.
Figure 2 illustrates a flow chart depicts the fabrication of the capacitive humidity sensor and formation of the nanoporous membrane in accordance of the present invention. While, Figure 4 illustrates capacitive humidity sensor formation process flow in accordance of the present invention. In operation, a method of fabricating a capacitive humidity sensor having nanoporous polyimide membranes begins with depositing an insulating layer as an electrical isolation layer on a substrate (210; 212) (Figure 4a) and sandwiched between a plurality of conductive electrodes and the substrate. This is followed by forming a first polyimide sensing membrane (214) by depositing a first polyimide layer on top of the insulating layer (Figure 4b). Then, the deposited conductive layer on top of the first polyimide sensing membrane to form a plurality of interdigital capacitive electrodes is etched (216) (Figure 4c). Subsequently, a plurality of silicon nanowires are grown (218). The silicon nanowires are grown by plasma enhanced chemical vapor deposition via a thin layer of metal catalyst (Figure 4d). A second polyimide sensing membrane is deposited on top of the conductive electrodes (220) (Figure 4e) and this is followed by planarising the silicon nanowires coated with the second polyimide sensing membrane (222) (Figure 4f). The coated silicon nanowires are planarised by a chemical mechanical polishing (CMP) method. Finally, the silicon nanowires are removed to form a plurality of nanopores on the second polyimide sensing membrane (224) (Figure 4g). These silicon nanowires are removed by wet etching with potassium hydroxide solution. The polyimide sensing membranes are provided in the present invention to capture a fringing electric field beneath the interdigital capacitive electrodes.
Interdigitated capacitor has been widely incorporated with dielectric sensing membrane for chemical sensing applications. Typically, the physical structure of the device comprises of a sensing membrane sitting on top of an array of interdigitated fingers. Figure 3 depicts interdigital electrode structure (310) embedded in the capacitive humidity sensor in accordance of the present invention. The sensing mechanism is based on the dielectric properties of membrane material which includes physical, chemical, or structural properties influencing the fringing electric field between the finger electrodes resulting in a change in capacitance. There are extensive applications for nanoporous membranes and not limited to the following highly selective transfer mask, a filter for biochemical, biomedical and material studies; sensing membrane layer; anti-reflection surface for solar cells; and as photonic crystals. At present these nonporous membranes are fabricated using lithographic methods which have resolution and cost imposed limitations; or by using material(s) that is able to change its chemical structure. However, applications for such materials are limited and the processing methods are not compatible with the flow of semiconductor device fabrication.
In the present invention, nanoporous polyimide membrane which less than 100nm in dimension is fabricated by utilizing silicon nanowires and a combination of selective etching methods. The nanoporous polyimide membrane can be fabricated onto silicon, glass, metal or polymer type substrate as long as it can withstand the growth temperature of the silicon nanowires, which is typically above 350 °C. Diameter of the pores can be accurately controlled as they are directly dependent on the diameter of the grown silicon nanowires which in turns is dependent on the thickness of the metal catalyst used. As for the height of the nanopores, there are of high aspect ratio and is dependent on the thickness of the membrane material which typically ranges up to 5μηι.
In an alternative embodiment, capacitive humidity sensor with single layer nanoporous polyimide on top of the electrode surface in accordance to an alternative embodiment of the present invention is provided as depicted in Figure 5. The methodof fabricating a capacitive humidity sensor having single layer nanoporous polyimide is the same with the present method with the difference in not depositing/forming the bottom polyimide layer. One of the advantages of the present invention is that it enhances moisture absorption and desorption from the polyimide membrane to improve device response to changes in environmental humidity. Another advantage of the system and method of the present invention is that the formation of nanopores is independent of lithographic resolution. In addition, diameter of the pores can be accurately controlled as they are directly dependent on the diameter of the grown silicon nanowires which in turns is dependent on the thickness of the metal catalyst used.
The foregoing embodiment and advantages are merely exemplary and are not to be construed as limiting the present invention. The description of the embodiments of the present invention is intended to be illustrative and not to limit the scope of the claims and many alternatives, modifications and variations will be apparent to those skilled in the art.

Claims

1. A method of fabricating a capacitive humidity sensor having nanoporous polyimide membranes comprising
depositing an insulating layer as an electrical isolation layer on a substrate and sandwiched between a plurality of conductive electrodes and the substrate (210; 212); forming a first polyimide sensing membrane by depositing a first polyimide layer on top of the insulating layer (214); etching the deposited conductive layer on top of the first polyimide sensing membrane to form a plurality of interdigital capacitive electrodes(216); growing a plurality of silicon nanowires(218); depositing a second polyimide sensing membrane on top of the conductive electrodes(220); planarising the silicon nanowires coated with the second polyimide sensing membrane(222); and removing the silicon nanowires to form a plurality of nanopores on the second polyimide sensing membrane(224).
The method as claimed in Claim 1 wherein the polyimide sensing membranes are provided to capture a fringing electric field beneath the interdigital capacitive electrodes.
The method as claimed in Claim 1 wherein the silicon nanowires are grown by plasma enhanced chemical vapor deposition via a thin layer of metal catalyst.
4. The method as claimed in Claim 1 wherein the coated silicon nanowires are planarised by a chemical mechanical polishing (CMP) method.
5. The method as claimed in Claim 1 wherein the silicon nanowires are removed by wet etching with potassium hydroxide solution.
6. A capacitive humidity sensor (100) comprises a substrate (110),
an insulating layer ( 2) as an electrical isolation layer is deposited on the substrate and sandwiched between a plurality of conductive electrodes (114) and the substrate (110); and
a plurality of an array of interdigital capacitive electrodes (116) as sensing elements placed on the insulating layer (112) and sandwiched between a first nanoporous polyimide membrane (118) and a second nanoporous polyimide membrane (118) wherein each nanoporous polyimide membrane changes its dielectric permittivity when different relative humidity levels are detected.
7. The capacitive humidity sensor as claimed in Claim 6 wherein a depth of the nanoporous of each nanoporous polyimide membrane is 0.5 μιη to 5 μηι.
8. The capacitive humidity sensor as claimed in Claim 6 wherein a diameter of nanoporous of the polyimide membrane is in the range of 10 nm to 200 nm.
9. A capacitive humidity sensor (100) comprises a substrate (110),
an insulating layer (112) as an electrical isolation layer is deposited on the substrate and sandwiched between a plurality of conductive electrodes (114) and the substrate (1 0); and
a plurality of an array of interdigital capacitive electrodes (116) as sensing elements placed on the insulating layer (112) and below a nanoporous polyimide membrane (118) wherein the nanoporous polyimide membrane changes its dielectric permittivity when different relative humidity levels are detected.
PCT/MY2015/000083 2014-10-09 2015-10-07 Humidity sensor with nanoporous polyimide membranes and a method of fabrication thereof WO2016056887A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
MYPI2014002875 2014-10-09
MYPI2014002875 2014-10-09

Publications (1)

Publication Number Publication Date
WO2016056887A1 true WO2016056887A1 (en) 2016-04-14

Family

ID=55653417

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/MY2015/000083 WO2016056887A1 (en) 2014-10-09 2015-10-07 Humidity sensor with nanoporous polyimide membranes and a method of fabrication thereof

Country Status (1)

Country Link
WO (1) WO2016056887A1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109283176A (en) * 2018-09-14 2019-01-29 大连理工大学 A kind of photonic crystal colorimetric humidity sensor and preparation method thereof based on nanogel
WO2019060168A1 (en) * 2017-09-22 2019-03-28 Applied Materials, Inc. Method to create a free-standing membrane for biological applications
CN110282594A (en) * 2019-06-25 2019-09-27 苏州大学 Water volt device based on silicon micro-nano structure and its preparation method and application
CN110364594A (en) * 2019-07-19 2019-10-22 中原工学院 A kind of preparation method in gallium nitride or aluminum nitride nanometer hole
EP3401674B1 (en) * 2017-05-09 2020-07-15 ams International AG Capacitive-type humidity sensor with superhydrophobic top surface and corresponding fabrication method
DE102020208322A1 (en) 2020-07-02 2022-01-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Arrangement with electrode layers and sensitive layer

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009066992A2 (en) * 2007-11-23 2009-05-28 Mimos Berhad Capacitive sensor
US20110113893A1 (en) * 2004-03-29 2011-05-19 Arms Steven W Component and Circuit with Moisture Barrier, Transmitter, and Protective Cover
WO2012064177A1 (en) * 2010-11-11 2012-05-18 Mimos Berhad Nanoporous membrane and method of forming thereof
WO2012067488A1 (en) * 2010-11-15 2012-05-24 Mimos Berhad Humidity sensor and a method for fabricating the same
WO2012141883A1 (en) * 2011-04-13 2012-10-18 3M Innovative Properties Company Method of using an absorptive sensor element
US20130095349A1 (en) * 2011-10-14 2013-04-18 Seagate Technology Llc Reader stop-layers

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110113893A1 (en) * 2004-03-29 2011-05-19 Arms Steven W Component and Circuit with Moisture Barrier, Transmitter, and Protective Cover
WO2009066992A2 (en) * 2007-11-23 2009-05-28 Mimos Berhad Capacitive sensor
WO2012064177A1 (en) * 2010-11-11 2012-05-18 Mimos Berhad Nanoporous membrane and method of forming thereof
WO2012067488A1 (en) * 2010-11-15 2012-05-24 Mimos Berhad Humidity sensor and a method for fabricating the same
WO2012141883A1 (en) * 2011-04-13 2012-10-18 3M Innovative Properties Company Method of using an absorptive sensor element
US20130095349A1 (en) * 2011-10-14 2013-04-18 Seagate Technology Llc Reader stop-layers

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3401674B1 (en) * 2017-05-09 2020-07-15 ams International AG Capacitive-type humidity sensor with superhydrophobic top surface and corresponding fabrication method
US11262325B2 (en) 2017-05-09 2022-03-01 Sciosense B.V. Sensor semiconductor device
WO2019060168A1 (en) * 2017-09-22 2019-03-28 Applied Materials, Inc. Method to create a free-standing membrane for biological applications
KR20200044992A (en) * 2017-09-22 2020-04-29 어플라이드 머티어리얼스, 인코포레이티드 How to create independent membranes for biological applications
KR102412947B1 (en) 2017-09-22 2022-06-24 어플라이드 머티어리얼스, 인코포레이티드 How to Create a Freestanding Membrane for Biological Applications
KR20220095250A (en) * 2017-09-22 2022-07-06 어플라이드 머티어리얼스, 인코포레이티드 Method to create a free-standing membrane for biological applications
KR102587775B1 (en) 2017-09-22 2023-10-12 어플라이드 머티어리얼스, 인코포레이티드 Method to create a free-standing membrane for biological applications
CN109283176A (en) * 2018-09-14 2019-01-29 大连理工大学 A kind of photonic crystal colorimetric humidity sensor and preparation method thereof based on nanogel
CN110282594A (en) * 2019-06-25 2019-09-27 苏州大学 Water volt device based on silicon micro-nano structure and its preparation method and application
CN110364594A (en) * 2019-07-19 2019-10-22 中原工学院 A kind of preparation method in gallium nitride or aluminum nitride nanometer hole
CN110364594B (en) * 2019-07-19 2020-05-29 中原工学院 Preparation method of gallium nitride or aluminum nitride nanopore
DE102020208322A1 (en) 2020-07-02 2022-01-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Arrangement with electrode layers and sensitive layer

Similar Documents

Publication Publication Date Title
WO2016056887A1 (en) Humidity sensor with nanoporous polyimide membranes and a method of fabrication thereof
US10145812B2 (en) Capacitive humidity sensor with graphene electrode
CN101308110B (en) Low-power consumption double module integrated humidity sensitive chip with heating function and its manufacture method
CN104181203B (en) A kind of MEMS gas sensors and preparation method thereof
WO2015085816A1 (en) Mems humidity sensor and preparation method
CN105758562A (en) Flexible pressure sensor and preparation method thereof
CN108387617B (en) Gas sensor and method for manufacturing the same
CN103438936B (en) Based on the condenser type temperature of SOI sheet device layer silicon anode linkage, humidity and baroceptor integrated manufacturing method
CN102253091A (en) Capacitive relative humidity sensor based on graphene oxide
TWI598583B (en) Resistive mems humidity sensor
KR101367887B1 (en) Capacitance Type Humidity Sensor
CN105510404A (en) Rapidly-responsive humidity sensor and manufacturing method thereof
CN204128996U (en) A kind of MEMS gas sensor
CN102507660A (en) Humidity-sensitive sensor based on aluminum oxide nanowire film and preparation method of humidity-sensitive sensor
CN104634833A (en) MEMS capacitance-type relative humidity sensor and preparation method thereof
WO2014007603A2 (en) A method of fabricating a gas sensor
KR101544386B1 (en) Pressure sensor and manufacturing method thereof
CN103434999A (en) Integrated manufacturing method for capacitance type temperature, humidity, air pressure and acceleration sensors based on anodic bonding of SOI (silicon on insulator) sheet silicon substrate
CN203606311U (en) Heating type humidity sensor
Li et al. High-performance capacitive humidity sensor based on silicon nanoporous pillar array
Li et al. Capacitive humidity sensor with a coplanar electrode structure based on anodised porous alumina film
CN201203591Y (en) Low-power consumption thermal insulation double-module integrated humidity sensor chip with heat purification function
WO2016109434A1 (en) Nanostructured lanthanum oxide humidity sensor
CN207866749U (en) A kind of integrated humidity sensor
Milovanov et al. Influence of gas adsorption on the impedance of porous GaAs

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15849732

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15849732

Country of ref document: EP

Kind code of ref document: A1