WO2016027530A1 - Photoelectric conversion device - Google Patents

Photoelectric conversion device Download PDF

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Publication number
WO2016027530A1
WO2016027530A1 PCT/JP2015/064278 JP2015064278W WO2016027530A1 WO 2016027530 A1 WO2016027530 A1 WO 2016027530A1 JP 2015064278 W JP2015064278 W JP 2015064278W WO 2016027530 A1 WO2016027530 A1 WO 2016027530A1
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WO
WIPO (PCT)
Prior art keywords
wiring
electrode
semiconductor film
amorphous semiconductor
photoelectric conversion
Prior art date
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PCT/JP2015/064278
Other languages
French (fr)
Japanese (ja)
Inventor
直城 浅野
健 稗田
親扶 岡本
東　賢一
Original Assignee
シャープ株式会社
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Publication of WO2016027530A1 publication Critical patent/WO2016027530A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a photoelectric conversion device.
  • the most manufactured and sold solar cells have a structure in which electrodes are formed on a light receiving surface that is a surface on which sunlight is incident and a back surface that is opposite to the light receiving surface, respectively.
  • FIG. 19 shows a schematic cross-sectional view of a solar cell with a wiring sheet described in Patent Document 1.
  • the conventional solar cell with a wiring sheet shown in FIG. 19 has a back electrode type solar cell 100, a wiring sheet 200, and an insulating resin 300 between the back electrode type solar cell 100 and the wiring sheet 200. is doing.
  • the back electrode type solar cell 100 includes a substrate 101 made of polycrystalline silicon or single crystal silicon having n-type or p-type conductivity, and an n-type impurity diffusion region 102 provided on the back surface of the substrate 101. And a p-type impurity diffusion region 103, an n-type silver electrode 111 provided on the n-type impurity diffusion region 102, and a p-type silver electrode 112 provided on the p-type impurity diffusion region 103. Yes.
  • the n-type impurity diffusion region 102 is formed by a method such as vapor phase diffusion using a gas containing an n-type impurity or coating diffusion in which a heat treatment is applied after applying a paste containing an n-type impurity (see paragraph [0076 of Patent Document 1). ]).
  • the p-type impurity diffusion region 103 is formed by a method such as vapor phase diffusion using a gas containing a p-type impurity or coating diffusion in which a heat treatment is applied after applying a paste containing a p-type impurity (paragraph of Patent Document 1). [0076]).
  • the wiring sheet 200 has an insulating base material 201, an n-type copper wiring 202 and a p-type copper wiring 203 provided on the insulating base material 201.
  • the insulating base 201 for example, polyester, polyethylene naphthalate, polyimide, or the like is used (paragraph [0090] of Patent Document 1).
  • the insulating resin 300 an epoxy resin, an acrylic resin, or a mixed resin of an epoxy resin and an acrylic resin is used (paragraph [0098] of Patent Document 1).
  • the end in the width W5 direction of the n-type silver electrode 111 and the end in the width W6 direction of the p-type silver electrode 112 are respectively n-type copper wiring 202.
  • the electric field strength applied to the surfaces of the n-type silver electrode 111 and the p-type silver electrode 112 is abruptly prevented from protruding from the end in the width W7 direction and the end of the p-type copper wiring 203 in the width W8 direction. It is said that an increase can be suppressed and a decrease in characteristics due to ion migration can be stably suppressed (paragraph [0061] of Patent Document 1).
  • the embodiment disclosed herein includes a heterojunction back contact cell and a wiring sheet electrically connected to the heterojunction back contact cell, and the heterojunction back contact cell has a first conductivity type or A second conductive type semiconductor substrate; a first conductive type amorphous semiconductor film provided on one side of the semiconductor substrate; a second conductive type amorphous semiconductor film; and a first conductive type amorphous semiconductor film
  • the first electrode and the second electrode on the second conductive type amorphous semiconductor film are provided, and the wiring sheet includes an insulating base material, and a first wiring and a second wiring on the insulating base material.
  • the first electrode is electrically connected to the first wiring
  • the second electrode is electrically connected to the second wiring
  • the width of the first electrode is equal to or greater than the width of the first wiring
  • At least one relationship that the width of the second electrode is equal to or larger than the width of the second wiring is satisfied.
  • it has a photoelectric conversion device.
  • the characteristics of the photoelectric conversion device in which the heterojunction back contact cell is electrically connected to the wiring sheet can be improved.
  • FIG. 1 is a schematic cross-sectional view of a photoelectric conversion device according to Embodiment 1.
  • FIG. It is a typical top view of the back surface of a heterojunction type back contact cell. It is a typical top view of a wiring sheet.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment.
  • 1 is a schematic plan view of a photoelectric conversion device according to Embodiment 1.
  • FIG. 1 is a schematic plan view of a photoelectric conversion device according to Embodiment 1.
  • FIG. 6 is a schematic cross-sectional view of a photoelectric conversion apparatus according to Embodiment 2.
  • FIG. 6 is a schematic cross-sectional view of a photoelectric conversion apparatus according to Embodiment 3.
  • FIG. (A) is typical sectional drawing which illustrates a part of manufacturing process of the photoelectric conversion apparatus of Embodiment 4
  • (b) is typical sectional drawing of the photoelectric conversion apparatus of Embodiment 4.
  • FIG. 2 is a schematic cross-sectional view of a solar cell with a wiring sheet described in Patent Document 1.
  • FIG. 1 is a schematic cross-sectional view of the photoelectric conversion device according to the first embodiment.
  • the photoelectric conversion device of Embodiment 1 includes a heterojunction back contact cell 10 and a wiring sheet 20 electrically connected to the heterojunction back contact cell 10.
  • the heterojunction back contact cell 10 is provided in contact with the back surface of the semiconductor substrate 1 so as to be adjacent to the semiconductor substrate 1 that is an n-type single crystal silicon substrate and the one surface (back surface) of the semiconductor substrate 1.
  • the first i-type amorphous semiconductor film 2 and the second i-type amorphous semiconductor film 4 are provided.
  • each of the first i-type amorphous semiconductor film 2 and the second i-type amorphous semiconductor film 4 is an i-type amorphous silicon film.
  • first conductive type amorphous semiconductor film 3 in contact with the first i-type amorphous semiconductor film 2 is provided.
  • second i-type amorphous semiconductor film 4 On the second i-type amorphous semiconductor film 4, a second conductivity-type amorphous semiconductor film 5 in contact with the second i-type amorphous semiconductor film 4 is provided.
  • the first conductive amorphous semiconductor film 3 is a p-type amorphous silicon film
  • the second conductive amorphous semiconductor film 5 is an n-type amorphous silicon film.
  • first electrode 11 in contact with the first conductive type amorphous semiconductor film 3 is provided on the first conductive type amorphous semiconductor film 3.
  • a second electrode 12 in contact with the second conductive type amorphous semiconductor film 5 is provided on the second conductive type amorphous semiconductor film 5.
  • both end portions of the stacked body of the second i-type amorphous semiconductor film 4 and the second conductive type amorphous semiconductor film 5 are respectively connected to the first i-type amorphous semiconductor film 2 and the first conductive type.
  • the edge part of the laminated body with the type amorphous semiconductor film 3 is covered. Therefore, the end of the second i-type amorphous semiconductor film 4 is located between the first conductive type amorphous semiconductor film 3 and the second conductive type amorphous semiconductor film 5, and the second Both ends of the i-type amorphous semiconductor film 4 are in contact with both the first conductive type amorphous semiconductor film 3 and the second conductive type amorphous semiconductor film 5. As a result, the first conductive amorphous semiconductor film 3 and the second conductive amorphous semiconductor film 5 are separated by the second i-type amorphous semiconductor film 4.
  • FIG. 2 is a schematic plan view of the back surface of the heterojunction back contact cell 10.
  • a strip-shaped first electrode 11 and a strip-shaped second electrode 12 are spaced apart from each other on the back surface of the semiconductor substrate 1 of the heterojunction back contact cell 10.
  • the second electrodes 12 are alternately arranged so that the longitudinal directions thereof are the same.
  • the width of the first electrode 11 (the length in the direction orthogonal to the longitudinal direction of the first electrode 11) is W1
  • the width of the second electrode 12 (the direction orthogonal to the longitudinal direction of the second electrode 12). ) Is W2.
  • FIG. 3 shows a schematic plan view of the wiring sheet 20.
  • the wiring sheet 20 includes an insulating base material 21, first wirings 22 and second wirings 23 on the insulating base material 21.
  • the first wirings 22 and the second wirings 23 are also formed in a band shape, and are spaced apart from each other on the insulating base material 21 so that the longitudinal directions of these wirings are the same direction. Has been placed.
  • one end of the plurality of first wirings 22 and one end of the plurality of second wirings 23 are electrically connected to a strip-shaped current collection wiring 24, respectively.
  • the current collecting wiring 24 is disposed on the insulating base material 21 so as to have a longitudinal direction in a direction orthogonal to the longitudinal directions of the first wiring 22 and the second wiring 23.
  • the current collection wiring 24 has a function of collecting current from the plurality of first wirings 22 or the plurality of second wirings 23.
  • an insulating substrate can be used.
  • a film of polyester, polyethylene naphthalate, polyimide, or the like can be used.
  • first wiring 22, the second wiring 23, and the current collecting wiring 24 a conductive material can be used, for example, copper or the like can be used.
  • the first wiring 22, the second wiring 23, and the current collecting wiring 24 are each formed, for example, by forming a conductive film such as a metal film on the entire surface of the insulating base 21 and then etching a part thereof. It can be formed by removing and patterning.
  • the width of the first wiring 22 (the length in the direction orthogonal to the longitudinal direction of the first wiring 22) is W3, and the width of the second wiring 23 (the direction orthogonal to the longitudinal direction of the second wiring 23). ) Is W4.
  • a first i-type amorphous semiconductor film 2 is formed on the entire back surface of the semiconductor substrate 1.
  • the method for forming the first i-type amorphous semiconductor film 2 is not particularly limited.
  • a plasma CVD (Chemical Vapor Deposition) method can be used.
  • an n-type single crystal silicon substrate can be preferably used, but is not limited to an n-type single crystal silicon substrate, and for example, a conventionally known n-type semiconductor substrate can be used as appropriate.
  • an i-type amorphous silicon film can be preferably used, but is not limited to an i-type amorphous silicon film.
  • a quality semiconductor film can also be used.
  • i-type means not only a completely intrinsic state but also a sufficiently low concentration (the n-type impurity concentration is less than 1 ⁇ 10 15 / cm 3 and the p-type impurity concentration is 1 ⁇ (Less than 10 15 / cm 3 ) is meant to include n-type or p-type impurities.
  • amorphous silicon includes not only amorphous silicon in which dangling bonds of silicon atoms are not terminated with hydrogen, but also silicon such as hydrogenated amorphous silicon. Also included are those in which dangling bonds of atoms are terminated with hydrogen.
  • a first conductivity type amorphous semiconductor film 3 is formed on the first i-type amorphous semiconductor film 2.
  • the formation method of the 1st conductivity type amorphous semiconductor film 3 is not specifically limited, For example, plasma CVD method can be used.
  • the first conductive type amorphous semiconductor film 3 a p-type amorphous silicon film can be preferably used.
  • the first conductive type amorphous semiconductor film 3 is not limited to a p-type amorphous silicon film.
  • a semiconductor film can also be used.
  • p-type impurity contained in the first conductive type amorphous semiconductor film 3 for example, boron can be used.
  • p-type means a state where the p-type impurity concentration is 1 ⁇ 10 15 / cm 3 or more.
  • a stacked body of the first i-type amorphous semiconductor film 2 and the first conductive-type amorphous semiconductor film 3 is formed on the first conductive-type amorphous semiconductor film 3.
  • An etching mask 31 such as a photoresist having an opening at a portion to be etched in the thickness direction is formed.
  • etching mask 31 As a mask, a part of the stack of the first i-type amorphous semiconductor film 2 and the first conductive amorphous semiconductor film 3 is formed in the thickness direction. Etch into. Thereby, a part of the back surface of the semiconductor substrate 1 is exposed. Thereafter, as shown in FIG. 8, all the etching mask 31 is removed.
  • the second i-type is formed so as to cover the semiconductor substrate 1 and the stacked body of the first i-type amorphous semiconductor film 2 and the first conductive-type amorphous semiconductor film 3.
  • An amorphous semiconductor film 4 is formed.
  • the method for forming the second i-type amorphous semiconductor film 4 is not particularly limited, and for example, a plasma CVD method can be used.
  • an i-type amorphous silicon film can be suitably used, but is not limited to an i-type amorphous silicon film.
  • a conventionally known i-type amorphous silicon film is used.
  • a quality semiconductor film can also be used.
  • a second conductivity type amorphous semiconductor film 5 is formed on the second i-type amorphous semiconductor film 4.
  • the formation method of the 2nd conductivity type amorphous semiconductor film 5 is not specifically limited, For example, plasma CVD method can be used.
  • an n-type amorphous silicon film can be preferably used, but is not limited to an n-type amorphous silicon film.
  • a conventionally known n-type amorphous silicon film is used.
  • a semiconductor film can also be used.
  • n-type impurity contained in the n-type amorphous silicon film constituting the second conductivity type amorphous semiconductor film 5 for example, phosphorus can be used.
  • n-type means a state where the n-type impurity concentration is 1 ⁇ 10 15 / cm 3 or more.
  • the photoresist is applied only to the portion where the stacked body of the second i-type amorphous semiconductor film 4 and the second conductive type amorphous semiconductor film 5 is left on the back surface of the semiconductor substrate 1.
  • Etching mask 32 is formed.
  • etching mask 32 As a mask, a part of the stacked body of the second i-type amorphous semiconductor film 4 and the second conductive type amorphous semiconductor film 5 is wet-etched in the thickness direction, As shown in FIG. 12, a part of the first conductive type amorphous semiconductor film 3 is exposed. Thereafter, the etching mask 32 is completely removed.
  • the first electrode 11 is formed so as to contact the first conductive type amorphous semiconductor film 3, and the second electrode 12 is set so as to contact the second conductive type amorphous semiconductor film 5.
  • a method for forming the first electrode 11 and the second electrode 12 is not particularly limited, and for example, an evaporation method or the like can be used.
  • the heterojunction back contact cell 10 is completed.
  • the heterojunction back contact cell 10 and the wiring sheet 20 are overlaid as shown in FIG.
  • the first electrode 11 of the heterojunction back contact cell 10 is in direct contact with the first wiring 22 of the wiring sheet 20
  • the second electrode 12 of the heterojunction back contact cell 10 is the second wiring 23 of the wiring sheet 20.
  • the heterojunction back contact cell 10 and the wiring sheet 20 are overlapped so as to be in direct contact with each other. Thereby, the first electrode 11 and the first wiring 22 are electrically connected, and the second electrode 12 and the second wiring 23 are electrically connected.
  • the heterojunction back contact cell 10 and the wiring sheet 20 are fixed and mechanically connected by curing an insulating adhesive.
  • FIG. 15 shows a schematic plan view of the photoelectric conversion device of Embodiment 1 as viewed from the light receiving surface side.
  • a plurality of heterojunction back contact cells 10 are installed on the wiring sheet 20, but the number of heterojunction back contact cells 10 installed on the wiring sheet 20 is not particularly limited, for example, one It may be.
  • the end of the electrode in the width direction does not protrude from the end in the width direction of the wiring as in the conventional solar cell with a wiring sheet shown in FIG.
  • Such a rapid increase in electric field intensity is suppressed, and a decrease in characteristics due to ion migration is stably suppressed.
  • the current generated when light is incident on the heterojunction back contact cell 10 is taken out from the first wiring 22 and the second wiring 23 of the wiring sheet 20.
  • the width W3 of the first wiring 22 and the width W4 of the second wiring 23 of the wiring sheet 20 are specified as predetermined widths corresponding to the size of the surface area of the insulating base material 21, respectively.
  • the width W1 of the first electrode 11 and the width W3 of the first wiring 22 satisfy the relationship of W1 ⁇ W3, and the width W2 of the second electrode 12
  • the width W4 of the second wiring 23 satisfies the relationship of W2 ⁇ W4. Therefore, the width of the electrode is wider than the width of the wiring, regardless of the width W3 of the first wiring 22 and the width W4 of the second wiring 23 of the wiring sheet 20, respectively. A sufficient contact area with the wiring can be ensured.
  • the characteristic of the photoelectric conversion apparatus by which the heterojunction type back contact cell 10 was electrically connected to the wiring sheet 20 can be improved.
  • it is preferable that one of the relations W1> W3 and W2> W4 is satisfied, and both the relations W1> W3 and W2> W4 are satisfied. More preferably.
  • both end portions 12a of the second electrode 12 in the width W2 direction protrude from the end portions 23a of the second wiring 23 in the width W4 direction, respectively, the twisting between the second electrode 12 and the second wiring 23 is performed. Since a wide contact area can be secured, the characteristics of the photoelectric conversion device tend to be further improved.
  • FIG. 16 is a schematic cross-sectional view of the photoelectric conversion device according to the second embodiment.
  • the first electrode 11 and the first wiring 22 are electrically connected through the conductive adhesive 41
  • the second electrode 12 and the second wiring 23 are conductive. It is characterized by being electrically connected through an adhesive 41.
  • the conductive adhesive 41 is conductive and can be made of a material that can bond the electrode and the wiring. For example, solder or the like can be used.
  • FIG. 17 is a schematic cross-sectional view of the photoelectric conversion device according to the third embodiment.
  • the width W1 of the first electrode 11 and the width W3 of the first wiring 22 satisfy the relationship of W1 ⁇ W3, but the width W2 of the second electrode 12 and the width of the second wiring 23
  • the width W4 is characterized by not satisfying the relationship of W2 ⁇ W4.
  • the photoelectric conversion device in which the heterojunction back contact cell 10 is electrically connected to the wiring sheet 20 since a sufficient contact area between the first electrode 11 and the first wiring 22 can be secured, the photoelectric conversion device in which the heterojunction back contact cell 10 is electrically connected to the wiring sheet 20. The characteristics can be improved.
  • FIG. 18A shows a schematic cross-sectional view illustrating a part of the manufacturing process of the photoelectric conversion device of the fourth embodiment
  • FIG. 18B shows a schematic cross-sectional view of the photoelectric conversion device of the fourth embodiment. Show.
  • the photoelectric conversion device of Embodiment 4 uses the above-described insulating adhesive and conductive adhesive 41 for joining the first electrode 11 and the first wiring 22 and joining the second electrode 12 and the second wiring 23. After the heterojunction back contact cell 10 and the wiring sheet 20 are aligned, the heterojunction back contact cell 10 and the wiring sheet 20 are adhered to each other by, for example, vacuum lamination as shown in FIG. Thus, the electrical connection between the first electrode 11 and the first wiring 22 and the electrical connection between the second electrode 12 and the second wiring 23 are performed. Thereby, similarly to the photoelectric conversion device of Embodiment 1, the width W1 of the first electrode 11 and the width W3 of the first wiring 22 shown in FIG. 18B satisfy the relationship of W1 ⁇ W3, and the second electrode. Thus, the photoelectric conversion device of Embodiment 4 in which the width W2 of 12 and the width W4 of the second wiring 23 satisfy the relationship of W2 ⁇ W4 is obtained.
  • the embodiment disclosed herein includes a heterojunction back contact cell and a wiring sheet electrically connected to the heterojunction back contact cell.
  • Conductive type or second conductive type semiconductor substrate, first conductive type amorphous semiconductor film provided on one side of the semiconductor substrate, second conductive type amorphous semiconductor film, and first conductive type amorphous semiconductor A first electrode on the porous semiconductor film and a second electrode on the second conductive type amorphous semiconductor film, the wiring sheet comprising: an insulating base; a first wiring on the insulating base; Two wirings, the first electrode is electrically connected to the first wiring, the second electrode is electrically connected to the second wiring, and the width of the first electrode is equal to or greater than the width of the first wiring.
  • At least one of the relation that the width of the second electrode is equal to or larger than the width of the second wiring is satisfied.
  • a photoelectric conversion device being.
  • at least one of the relationship that the width of the first electrode is equal to or larger than the width of the first wiring and the width of the second electrode is equal to or larger than the width of the second wiring is satisfied. Therefore, a sufficient contact area between the electrode and the wiring can be ensured, and the characteristics of the photoelectric conversion device can be improved.
  • the first wiring and the second wiring each have a strip shape. Also in this case, the characteristics of the photoelectric conversion device can be improved.
  • the first electrode and the second electrode each have a strip shape. Also in this case, the characteristics of the photoelectric conversion device can be improved.
  • both end portions in the width direction of the first electrode protrude from the end portions in the width direction of the first wiring. In this case, since a wider contact area between the first electrode and the first wiring can be ensured, the characteristics of the photoelectric conversion device tend to be further improved.
  • both end portions in the width direction of the second electrode protrude from the end portions in the width direction of the second wiring. In this case, since a wider contact area between the second electrode and the second wiring can be secured, the characteristics of the photoelectric conversion device tend to be further improved.
  • the entire surface of the first wiring is preferably electrically connected to the first electrode. Also in this case, since a wider contact area between the first electrode and the first wiring can be secured, the characteristics of the photoelectric conversion device tend to be further improved.
  • the entire surface of the second wiring is preferably electrically connected to the second electrode. Also in this case, since a wider contact area between the second electrode and the second wiring can be ensured, the characteristics of the photoelectric conversion device tend to be further improved.
  • the electrical connection between the first electrode and the first wiring is performed by direct contact between the first electrode and the first wiring and between the first electrode and the first wiring. It is preferable that this is performed by at least one of the conductive adhesives. Also in this case, the characteristics of the photoelectric conversion device can be improved.
  • the electrical connection between the second electrode and the second wiring is between the direct contact between the second electrode and the second wiring and between the second electrode and the second wiring. It is preferable that this is performed by at least one of the conductive adhesives. Also in this case, the characteristics of the photoelectric conversion device can be improved.
  • the semiconductor substrate preferably includes n-type crystalline silicon. Also in this case, the characteristics of the photoelectric conversion device can be improved.
  • the first i-type amorphous semiconductor film between the semiconductor substrate and the first conductive type amorphous semiconductor film, the semiconductor substrate and the second conductive type amorphous semiconductor It is preferable to further include a second i-type amorphous semiconductor film between the semiconductor film. Also in this case, the characteristics of the photoelectric conversion device can be improved.
  • the first i-type amorphous semiconductor film preferably contains i-type amorphous silicon. Also in this case, the characteristics of the photoelectric conversion device can be improved.
  • the second i-type amorphous semiconductor film preferably includes i-type amorphous silicon. Also in this case, the characteristics of the photoelectric conversion device can be improved.
  • the semiconductor substrate and the first i-type amorphous semiconductor film are in contact with each other.
  • the semiconductor substrate and the second i-type amorphous semiconductor film are preferably in contact with each other. Also in this case, the characteristics of the photoelectric conversion device can be improved.
  • the first i-type amorphous semiconductor film and the first conductive amorphous semiconductor film are in contact with each other. Also in this case, the characteristics of the photoelectric conversion device can be improved.
  • the second i-type amorphous semiconductor film and the second conductivity-type amorphous semiconductor film are in contact with each other. Also in this case, the characteristics of the photoelectric conversion device can be improved.
  • the end of the second i-type amorphous semiconductor film is located between the first conductive-type amorphous semiconductor film and the second conductive-type amorphous semiconductor film. It is preferable. Also in this case, the characteristics of the photoelectric conversion device can be improved.
  • the end of the second i-type amorphous semiconductor film is in contact with each of the first conductive type amorphous semiconductor film and the second conductive type amorphous semiconductor film. It is preferable. Also in this case, the characteristics of the photoelectric conversion device can be improved.
  • the embodiment disclosed herein includes a step of manufacturing a heterojunction back contact cell including a first electrode and a second electrode, and a step of preparing a wiring sheet including the first wiring and the second wiring. Electrically connecting the first electrode of the heterojunction back contact cell and the first wiring of the wiring sheet; and electrically connecting the second electrode of the heterojunction back contact cell and the second wiring of the wiring sheet.
  • the heterojunction back contact cell includes a first conductivity type or second conductivity type semiconductor substrate, and a first conductivity type amorphous semiconductor provided on one side of the semiconductor substrate.
  • the film, the second conductive amorphous semiconductor film, and the first electrode are provided on the first conductive amorphous semiconductor film, and the second electrode is provided on the second conductive amorphous semiconductor film.
  • the wiring sheet is made of an insulating substrate
  • the first wiring and the second wiring are provided on an insulating substrate, the width of the first electrode is equal to or larger than the width of the first wiring, and the width of the second electrode is equal to or larger than the width of the second wiring.
  • the step of fabricating the heterojunction back contact cell includes the step of forming a first conductivity type amorphous semiconductor film on one side of the first conductivity type or second conductivity type semiconductor substrate. Forming a semiconductor substrate, exposing a part of the semiconductor substrate by removing a part of the first conductive amorphous semiconductor film in a thickness direction, and the semiconductor substrate and the first conductive amorphous semiconductor film Forming a second conductive type amorphous semiconductor film thereon; forming a first electrode on the first conductive type amorphous semiconductor film; and second forming a second conductive type amorphous semiconductor film on the second conductive type amorphous semiconductor film.
  • a step of forming an electrode Also in this case, a photoelectric conversion device with improved characteristics can be manufactured.
  • the step of forming the first conductive type amorphous semiconductor film includes the step of forming the first i-type amorphous semiconductor film on one side of the semiconductor substrate; Forming a first conductivity type amorphous semiconductor film on the first i-type amorphous semiconductor film, and the step of forming the second conductivity type amorphous semiconductor film includes a step of forming the semiconductor substrate and the first conductivity type. Forming a second i-type amorphous semiconductor film on the second i-type amorphous semiconductor film, forming a second conductive amorphous semiconductor film on the second i-type amorphous semiconductor film, and It is preferable to contain. Also in this case, a photoelectric conversion device with improved characteristics can be manufactured.
  • the electrical connection between the first electrode and the first wiring is a direct contact between the first electrode and the first wiring, and between the first electrode and the first wiring. It is preferably performed by at least one of adhesion by a conductive adhesive. Also in this case, a photoelectric conversion device with improved characteristics can be manufactured.
  • the electrical connection between the second electrode and the second wiring is the direct contact between the second electrode and the second wiring, and between the second electrode and the second wiring. It is preferably performed by at least one of adhesion by a conductive adhesive. Also in this case, a photoelectric conversion device with improved characteristics can be manufactured.
  • the photoelectric conversion device and the method for manufacturing a photoelectric conversion device disclosed herein are preferably used for a photoelectric conversion module in which heterojunction back contact cells are electrically connected by a wiring sheet and a method for manufacturing the photoelectric conversion module. be able to.
  • Second conductivity-type amorphous semiconductor film 10 heterojunction back contact cell, 11 first electrode, 11a end, 12 second electrode, 12a end, 20 wiring sheet, 21 insulating substrate, 22 first wiring, 22a end, 23 second wiring, 23a end, 24 current collecting wiring, 31, 32 etching mask, 100 back electrode type solar cell, 101 substrate, 102 n type impurity diffusion region, 103 p type impurity diffusion region, 111 n type silver electrode, 112 p Silver electrode for mold, 200 wiring sheet, 201 insulating base material, 202 n-type copper wiring, 203 p-type copper wiring, 300 insulating resin.

Abstract

This photoelectric conversion device is provided with a hetero junction back contact cell (10) and a wiring sheet (20). The hetero junction back contact cell (10) is provided with a first conductivity-type or second conductivity-type semiconductor substrate (1), a first conductivity-type amorphous semiconductor film (3), a second conductivity-type amorphous semiconductor film (5), a first electrode (11), and a second electrode (12). The wiring sheet (20) is provided with an insulating base material (21), and first wiring (22) and second wiring (23) on the insulating base material (21). The first electrode (11) is electrically connected to the first wiring (22). The second electrode (12) is electrically connected to the second wiring (23). The relationship wherein the width W1 of the first electrode (11) is equal to or more than the width W3 of the first wiring (22) and/or the relationship wherein the width W2 of the second electrode (12) is equal to or more than the width W4 of the second wiring (23) is satisfied.

Description

光電変換装置Photoelectric conversion device
　本発明は、光電変換装置に関する。 The present invention relates to a photoelectric conversion device.
　太陽光エネルギを電気エネルギに直接変換する太陽電池は、近年、特に、地球環境問題の観点から、次世代のエネルギ源としての期待が急激に高まっている。太陽電池には、化合物半導体または有機材料を用いたものなど様々な種類のものがあるが、現在、主流となっているのは、シリコン結晶を用いたものである。 In recent years, expectations for solar cells that directly convert solar energy into electrical energy have increased rapidly, especially from the viewpoint of global environmental problems. There are various types of solar cells, such as those using compound semiconductors or organic materials, but the mainstream is currently using silicon crystals.
　現在、最も多く製造および販売されている太陽電池は、太陽光が入射する側の面である受光面と、受光面の反対側である裏面とにそれぞれ電極が形成された構造のものである。 Currently, the most manufactured and sold solar cells have a structure in which electrodes are formed on a light receiving surface that is a surface on which sunlight is incident and a back surface that is opposite to the light receiving surface, respectively.
　しかしながら、受光面に電極を形成した場合には、電極における太陽光の反射および吸収があることから、電極の面積分だけ入射する太陽光の量が減少する。そのため、裏面のみに電極を形成した太陽電池の開発が進められている（たとえば特許文献１参照）。 However, when an electrode is formed on the light receiving surface, sunlight is reflected and absorbed by the electrode, so that the amount of incident sunlight is reduced by the area of the electrode. For this reason, development of solar cells in which electrodes are formed only on the back surface is being promoted (see, for example, Patent Document 1).
　図１９に、特許文献１に記載の配線シート付き太陽電池の模式的な断面図を示す。図１９に示される従来の配線シート付き太陽電池は、裏面電極型太陽電池セル１００と、配線シート２００と、裏面電極型太陽電池セル１００と配線シート２００との間の絶縁性樹脂３００とを有している。 FIG. 19 shows a schematic cross-sectional view of a solar cell with a wiring sheet described in Patent Document 1. The conventional solar cell with a wiring sheet shown in FIG. 19 has a back electrode type solar cell 100, a wiring sheet 200, and an insulating resin 300 between the back electrode type solar cell 100 and the wiring sheet 200. is doing.
　裏面電極型太陽電池セル１００は、ｎ型またはｐ型のいずれかの導電型を有する多結晶シリコンまたは単結晶シリコンなどからなる基板１０１と、基板１０１の裏面に設けられたｎ型不純物拡散領域１０２およびｐ型不純物拡散領域１０３と、ｎ型不純物拡散領域１０２上に設けられたｎ型用銀電極１１１と、ｐ型不純物拡散領域１０３上に設けられたｐ型用銀電極１１２とを有している。 The back electrode type solar cell 100 includes a substrate 101 made of polycrystalline silicon or single crystal silicon having n-type or p-type conductivity, and an n-type impurity diffusion region 102 provided on the back surface of the substrate 101. And a p-type impurity diffusion region 103, an n-type silver electrode 111 provided on the n-type impurity diffusion region 102, and a p-type silver electrode 112 provided on the p-type impurity diffusion region 103. Yes.
　ｎ型不純物拡散領域１０２は、ｎ型不純物を含むガスを用いた気相拡散またはｎ型不純物を含むペーストを塗布した後に熱処理する塗布拡散などの方法により形成される（特許文献１の段落［００７６］）。また、ｐ型不純物拡散領域１０３は、ｐ型不純物を含むガスを用いた気相拡散またはｐ型不純物を含むペーストを塗布した後に熱処理する塗布拡散などの方法により形成される（特許文献１の段落［００７６］）。 The n-type impurity diffusion region 102 is formed by a method such as vapor phase diffusion using a gas containing an n-type impurity or coating diffusion in which a heat treatment is applied after applying a paste containing an n-type impurity (see paragraph [0076 of Patent Document 1). ]). The p-type impurity diffusion region 103 is formed by a method such as vapor phase diffusion using a gas containing a p-type impurity or coating diffusion in which a heat treatment is applied after applying a paste containing a p-type impurity (paragraph of Patent Document 1). [0076]).
　配線シート２００は、絶縁性基材２０１と、絶縁性基材２０１上に設けられたｎ型用銅配線２０２とｐ型用銅配線２０３とを有している。絶縁性基材２０１としては、たとえば、ポリエステル、ポリエチレンナフタレートまたはポリイミドなどが用いられる（特許文献１の段落［００９０］）。絶縁性樹脂３００としては、エポキシ樹脂、アクリル樹脂、またはエポキシ樹脂とアクリル樹脂との混合樹脂が用いられる（特許文献１の段落［００９８］）。 The wiring sheet 200 has an insulating base material 201, an n-type copper wiring 202 and a p-type copper wiring 203 provided on the insulating base material 201. As the insulating base 201, for example, polyester, polyethylene naphthalate, polyimide, or the like is used (paragraph [0090] of Patent Document 1). As the insulating resin 300, an epoxy resin, an acrylic resin, or a mixed resin of an epoxy resin and an acrylic resin is used (paragraph [0098] of Patent Document 1).
　図１９に示される従来の配線シート付き太陽電池においては、ｎ型用銀電極１１１の幅Ｗ５方向の端およびｐ型用銀電極１１２の幅Ｗ６方向の端が、それぞれ、ｎ型用銅配線２０２の幅Ｗ７方向の端およびｐ型用銅配線２０３の幅Ｗ８方向の端からはみ出ないようにすることによって、ｎ型用銀電極１１１およびｐ型用銀電極１１２の表面にかかる電界強度の急激な増加を抑制して、イオンマイグレーションに起因する特性の低下を安定して抑制することができるとされている（特許文献１の段落［００６１］）。 In the conventional solar cell with a wiring sheet shown in FIG. 19, the end in the width W5 direction of the n-type silver electrode 111 and the end in the width W6 direction of the p-type silver electrode 112 are respectively n-type copper wiring 202. The electric field strength applied to the surfaces of the n-type silver electrode 111 and the p-type silver electrode 112 is abruptly prevented from protruding from the end in the width W7 direction and the end of the p-type copper wiring 203 in the width W8 direction. It is said that an increase can be suppressed and a decrease in characteristics due to ion migration can be stably suppressed (paragraph [0061] of Patent Document 1).
国際公開第２０１２／００２２７０号International Publication No. 2012/002270
　しかしながら、図１９に示される従来の配線シート付き太陽電池の構造を、配線シートにヘテロ接合型バックコンタクトセルが電気的に接続された光電変換装置に適用した場合には、光電変換装置の特性が低下するという技術的課題があった。 However, when the structure of the conventional solar cell with a wiring sheet shown in FIG. 19 is applied to a photoelectric conversion device in which a heterojunction back contact cell is electrically connected to the wiring sheet, the characteristics of the photoelectric conversion device are There was a technical problem of lowering.
　ここで開示された実施形態は、ヘテロ接合型バックコンタクトセルと、ヘテロ接合型バックコンタクトセルと電気的に接続されている配線シートとを備え、ヘテロ接合型バックコンタクトセルは、第１導電型または第２導電型の半導体基板と、半導体基板の一方の側に設けられた第１導電型非晶質半導体膜と第２導電型非晶質半導体膜と、第１導電型非晶質半導体膜上の第１電極と、第２導電型非晶質半導体膜上の第２電極とを備え、配線シートは、絶縁性基材と、絶縁性基材上の第１配線と第２配線とを備え、第１電極は、第１配線に電気的に接続され、第２電極は、第２配線に電気的に接続されており、第１電極の幅が第１配線の幅以上であること、および第２電極の幅が第２配線の幅以上であることの少なくとも一方の関係が満たされている光電変換装置である。 The embodiment disclosed herein includes a heterojunction back contact cell and a wiring sheet electrically connected to the heterojunction back contact cell, and the heterojunction back contact cell has a first conductivity type or A second conductive type semiconductor substrate; a first conductive type amorphous semiconductor film provided on one side of the semiconductor substrate; a second conductive type amorphous semiconductor film; and a first conductive type amorphous semiconductor film The first electrode and the second electrode on the second conductive type amorphous semiconductor film are provided, and the wiring sheet includes an insulating base material, and a first wiring and a second wiring on the insulating base material. The first electrode is electrically connected to the first wiring, the second electrode is electrically connected to the second wiring, and the width of the first electrode is equal to or greater than the width of the first wiring; and At least one relationship that the width of the second electrode is equal to or larger than the width of the second wiring is satisfied. And it has a photoelectric conversion device.
　ここで開示された実施形態によれば、配線シートにヘテロ接合型バックコンタクトセルが電気的に接続された光電変換装置の特性を向上することができる。 According to the embodiment disclosed herein, the characteristics of the photoelectric conversion device in which the heterojunction back contact cell is electrically connected to the wiring sheet can be improved.
実施形態１の光電変換装置の模式的な断面図である。1 is a schematic cross-sectional view of a photoelectric conversion device according to Embodiment 1. FIG. ヘテロ接合型バックコンタクトセルの裏面の模式的な平面図である。It is a typical top view of the back surface of a heterojunction type back contact cell. 配線シートの模式的な平面図である。It is a typical top view of a wiring sheet. 実施形態１の光電変換装置の製造方法の一例の製造工程の一部について図解する模式的な断面図である。FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. 実施形態１の光電変換装置の製造方法の一例の製造工程の一部について図解する模式的な断面図である。FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. 実施形態１の光電変換装置の製造方法の一例の製造工程の一部について図解する模式的な断面図である。FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. 実施形態１の光電変換装置の製造方法の一例の製造工程の一部について図解する模式的な断面図である。FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. 実施形態１の光電変換装置の製造方法の一例の製造工程の一部について図解する模式的な断面図である。FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. 実施形態１の光電変換装置の製造方法の一例の製造工程の一部について図解する模式的な断面図である。FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. 実施形態１の光電変換装置の製造方法の一例の製造工程の一部について図解する模式的な断面図である。FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. 実施形態１の光電変換装置の製造方法の一例の製造工程の一部について図解する模式的な断面図である。FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. 実施形態１の光電変換装置の製造方法の一例の製造工程の一部について図解する模式的な断面図である。FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. 実施形態１の光電変換装置の製造方法の一例の製造工程の一部について図解する模式的な断面図である。FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. 実施形態１の光電変換装置の製造方法の一例の製造工程の一部について図解する模式的な断面図である。FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. 実施形態１の光電変換装置の模式的な平面図である。1 is a schematic plan view of a photoelectric conversion device according to Embodiment 1. FIG. 実施形態２の光電変換装置の模式的な断面図である。6 is a schematic cross-sectional view of a photoelectric conversion apparatus according to Embodiment 2. FIG. 実施形態３の光電変換装置の模式的な断面図である。6 is a schematic cross-sectional view of a photoelectric conversion apparatus according to Embodiment 3. FIG. （ａ）は実施形態４の光電変換装置の製造工程の一部を図解する模式的な断面図であり、（ｂ）は実施形態４の光電変換装置の模式的な断面図である。(A) is typical sectional drawing which illustrates a part of manufacturing process of the photoelectric conversion apparatus of Embodiment 4, (b) is typical sectional drawing of the photoelectric conversion apparatus of Embodiment 4. FIG. 特許文献１に記載の配線シート付き太陽電池の模式的な断面図である。2 is a schematic cross-sectional view of a solar cell with a wiring sheet described in Patent Document 1. FIG.
　以下、実施形態について説明する。なお、実施形態の説明に用いられる図面において、同一の参照符号は、同一部分または相当部分を表わすものとする。 Hereinafter, embodiments will be described. In the drawings used to describe the embodiments, the same reference numerals represent the same or corresponding parts.
　［実施形態１］
　＜光電変換装置の構成＞
　図１に、実施形態１の光電変換装置の模式的な断面図を示す。実施形態１の光電変換装置は、ヘテロ接合型バックコンタクトセル１０と、ヘテロ接合型バックコンタクトセル１０と電気的に接続されている配線シート２０とを備えている。 [Embodiment 1]
<Configuration of photoelectric conversion device>
FIG. 1 is a schematic cross-sectional view of the photoelectric conversion device according to the first embodiment. The photoelectric conversion device of Embodiment 1 includes a heterojunction back contact cell 10 and a wiring sheet 20 electrically connected to the heterojunction back contact cell 10.
　＜ヘテロ接合型バックコンタクトセル＞
　ヘテロ接合型バックコンタクトセル１０は、ｎ型単結晶シリコン基板である半導体基板１と、半導体基板１の一方側の表面（裏面）上に隣り合うようにして半導体基板１の裏面に接して設けられた第１のｉ型非晶質半導体膜２と第２のｉ型非晶質半導体膜４とを備えている。実施形態１においては、第１のｉ型非晶質半導体膜２および第２のｉ型非晶質半導体膜４は、それぞれ、ｉ型非晶質シリコン膜である。 <Heterojunction back contact cell>
The heterojunction back contact cell 10 is provided in contact with the back surface of the semiconductor substrate 1 so as to be adjacent to the semiconductor substrate 1 that is an n-type single crystal silicon substrate and the one surface (back surface) of the semiconductor substrate 1. The first i-type amorphous semiconductor film 2 and the second i-type amorphous semiconductor film 4 are provided. In the first embodiment, each of the first i-type amorphous semiconductor film 2 and the second i-type amorphous semiconductor film 4 is an i-type amorphous silicon film.
　第１のｉ型非晶質半導体膜２上には、第１のｉ型非晶質半導体膜２に接する第１導電型非晶質半導体膜３が設けられている。また、第２のｉ型非晶質半導体膜４上には、第２のｉ型非晶質半導体膜４に接する第２導電型非晶質半導体膜５が設けられている。実施形態１において、第１導電型非晶質半導体膜３はｐ型非晶質シリコン膜であり、第２導電型非晶質半導体膜５はｎ型非晶質シリコン膜である。 On the first i-type amorphous semiconductor film 2, a first conductive type amorphous semiconductor film 3 in contact with the first i-type amorphous semiconductor film 2 is provided. On the second i-type amorphous semiconductor film 4, a second conductivity-type amorphous semiconductor film 5 in contact with the second i-type amorphous semiconductor film 4 is provided. In the first embodiment, the first conductive amorphous semiconductor film 3 is a p-type amorphous silicon film, and the second conductive amorphous semiconductor film 5 is an n-type amorphous silicon film.
　第１導電型非晶質半導体膜３上には、第１導電型非晶質半導体膜３に接する第１電極１１が設けられている。また、第２導電型非晶質半導体膜５上には、第２導電型非晶質半導体膜５に接する第２電極１２が設けられている。 On the first conductive type amorphous semiconductor film 3, a first electrode 11 in contact with the first conductive type amorphous semiconductor film 3 is provided. A second electrode 12 in contact with the second conductive type amorphous semiconductor film 5 is provided on the second conductive type amorphous semiconductor film 5.
　そして、第２のｉ型非晶質半導体膜４と第２導電型非晶質半導体膜５との積層体の両端部は、それぞれ、第１のｉ型非晶質半導体膜２と第１導電型非晶質半導体膜３との積層体の端部を覆っている。そのため、第１導電型非晶質半導体膜３と第２導電型非晶質半導体膜５との間には第２のｉ型非晶質半導体膜４の端部が位置しており、第２のｉ型非晶質半導体膜４の両端部は、それぞれ、第１導電型非晶質半導体膜３および第２導電型非晶質半導体膜５の双方と接している。これにより、第１導電型非晶質半導体膜３と第２導電型非晶質半導体膜５とは第２のｉ型非晶質半導体膜４によって分離されている。 Then, both end portions of the stacked body of the second i-type amorphous semiconductor film 4 and the second conductive type amorphous semiconductor film 5 are respectively connected to the first i-type amorphous semiconductor film 2 and the first conductive type. The edge part of the laminated body with the type amorphous semiconductor film 3 is covered. Therefore, the end of the second i-type amorphous semiconductor film 4 is located between the first conductive type amorphous semiconductor film 3 and the second conductive type amorphous semiconductor film 5, and the second Both ends of the i-type amorphous semiconductor film 4 are in contact with both the first conductive type amorphous semiconductor film 3 and the second conductive type amorphous semiconductor film 5. As a result, the first conductive amorphous semiconductor film 3 and the second conductive amorphous semiconductor film 5 are separated by the second i-type amorphous semiconductor film 4.
　図２に、ヘテロ接合型バックコンタクトセル１０の裏面の模式的な平面図を示す。図２に示すように、ヘテロ接合型バックコンタクトセル１０の半導体基板１の裏面には、帯状の第１電極１１と、帯状の第２電極１２とが、間隔を空けて、第１電極１１および第２電極１２のそれぞれの長手方向が同一の方向となるようにして、交互に配置されている。実施形態１において、第１電極１１の幅（第１電極１１の長手方向と直交する方向の長さ）はＷ１とされ、第２電極１２の幅（第２電極１２の長手方向と直交する方向の長さ）はＷ２とされている。 FIG. 2 is a schematic plan view of the back surface of the heterojunction back contact cell 10. As shown in FIG. 2, a strip-shaped first electrode 11 and a strip-shaped second electrode 12 are spaced apart from each other on the back surface of the semiconductor substrate 1 of the heterojunction back contact cell 10. The second electrodes 12 are alternately arranged so that the longitudinal directions thereof are the same. In the first embodiment, the width of the first electrode 11 (the length in the direction orthogonal to the longitudinal direction of the first electrode 11) is W1, and the width of the second electrode 12 (the direction orthogonal to the longitudinal direction of the second electrode 12). ) Is W2.
　＜配線シート＞
　図３に、配線シート２０の模式的な平面図を示す。配線シート２０は、絶縁性基材２１と、絶縁性基材２１上の第１配線２２と第２配線２３とを備えている。第１配線２２および第２配線２３も、それぞれ帯状に形成されており、絶縁性基材２１上で互いに間隔を空けて、これらの配線の長手方向が同一の方向となるようにして、交互に配置されている。また、複数の第１配線２２の一端および複数の第２配線２３の一端は、それぞれ、帯状の集電用配線２４に電気的に接続されている。集電用配線２４は、第１配線２２および第２配線２３の長手方向と直交する方向に長手方向を有するように、絶縁性基材２１上に配置されている。集電用配線２４は、複数の第１配線２２または複数の第２配線２３から電流を集電する機能を有している。 <Wiring sheet>
FIG. 3 shows a schematic plan view of the wiring sheet 20. The wiring sheet 20 includes an insulating base material 21, first wirings 22 and second wirings 23 on the insulating base material 21. The first wirings 22 and the second wirings 23 are also formed in a band shape, and are spaced apart from each other on the insulating base material 21 so that the longitudinal directions of these wirings are the same direction. Has been placed. In addition, one end of the plurality of first wirings 22 and one end of the plurality of second wirings 23 are electrically connected to a strip-shaped current collection wiring 24, respectively. The current collecting wiring 24 is disposed on the insulating base material 21 so as to have a longitudinal direction in a direction orthogonal to the longitudinal directions of the first wiring 22 and the second wiring 23. The current collection wiring 24 has a function of collecting current from the plurality of first wirings 22 or the plurality of second wirings 23.
　絶縁性基材２１としては、絶縁性の基材を用いることができ、たとえば、ポリエステル、ポリエチレンナフタレートまたはポリイミドなどのフィルムを用いることができる。 As the insulating substrate 21, an insulating substrate can be used. For example, a film of polyester, polyethylene naphthalate, polyimide, or the like can be used.
　第１配線２２、第２配線２３および集電用配線２４としては、導電性材料を用いることができ、たとえば、銅などを用いることができる。なお、第１配線２２、第２配線２３および集電用配線２４は、それぞれ、たとえば、絶縁性基材２１の表面の全面に金属膜などの導電膜を形成した後に、その一部をエッチングなどにより除去してパターニングすることによって形成することができる。 As the first wiring 22, the second wiring 23, and the current collecting wiring 24, a conductive material can be used, for example, copper or the like can be used. The first wiring 22, the second wiring 23, and the current collecting wiring 24 are each formed, for example, by forming a conductive film such as a metal film on the entire surface of the insulating base 21 and then etching a part thereof. It can be formed by removing and patterning.
　実施形態１において、第１配線２２の幅（第１配線２２の長手方向と直交する方向の長さ）はＷ３とされ、第２配線２３の幅（第２配線２３の長手方向と直交する方向の長さ）はＷ４とされている。 In the first embodiment, the width of the first wiring 22 (the length in the direction orthogonal to the longitudinal direction of the first wiring 22) is W3, and the width of the second wiring 23 (the direction orthogonal to the longitudinal direction of the second wiring 23). ) Is W4.
　＜光電変換装置の製造方法＞
　以下、図４～図１５の模式的断面図を参照して、実施形態１の光電変換装置の製造方法の一例について説明する。まず、図４に示すように、半導体基板１の裏面の全面に第１のｉ型非晶質半導体膜２を形成する。第１のｉ型非晶質半導体膜２の形成方法は特に限定されないが、たとえばプラズマＣＶＤ（Chemical　Vapor　Deposition）法を用いることができる。 <Method for Manufacturing Photoelectric Conversion Device>
Hereinafter, an example of a method for manufacturing the photoelectric conversion device of Embodiment 1 will be described with reference to schematic cross-sectional views of FIGS. First, as shown in FIG. 4, a first i-type amorphous semiconductor film 2 is formed on the entire back surface of the semiconductor substrate 1. The method for forming the first i-type amorphous semiconductor film 2 is not particularly limited. For example, a plasma CVD (Chemical Vapor Deposition) method can be used.
　半導体基板１としては、ｎ型単結晶シリコン基板を好適に用いることができるがｎ型単結晶シリコン基板に限定されず、たとえば従来から公知のｎ型半導体基板を適宜用いることができる。 As the semiconductor substrate 1, an n-type single crystal silicon substrate can be preferably used, but is not limited to an n-type single crystal silicon substrate, and for example, a conventionally known n-type semiconductor substrate can be used as appropriate.
　第１のｉ型非晶質半導体膜２としては、ｉ型非晶質シリコン膜を好適に用いることができるがｉ型非晶質シリコン膜に限定されず、たとえば従来から公知のｉ型非晶質半導体膜を用いることもできる。 As the first i-type amorphous semiconductor film 2, an i-type amorphous silicon film can be preferably used, but is not limited to an i-type amorphous silicon film. A quality semiconductor film can also be used.
　なお、本明細書において「ｉ型」とは、完全な真性の状態だけでなく、十分に低濃度（ｎ型不純物濃度が１×１０15個／ｃｍ3未満、かつｐ型不純物濃度が１×１０15個／ｃｍ3未満）であればｎ型またはｐ型の不純物が混入された状態のものも含む意味である。 In the present specification, “i-type” means not only a completely intrinsic state but also a sufficiently low concentration (the n-type impurity concentration is less than 1 × 10 15 / cm 3 and the p-type impurity concentration is 1 × (Less than 10 15 / cm 3 ) is meant to include n-type or p-type impurities.
　また、本明細書において「非晶質シリコン」には、シリコン原子の未結合手（ダングリングボンド）が水素で終端されていない非晶質シリコンだけでなく、水素化非晶質シリコンなどのシリコン原子の未結合手が水素で終端されたものも含まれるものとする。 In this specification, “amorphous silicon” includes not only amorphous silicon in which dangling bonds of silicon atoms are not terminated with hydrogen, but also silicon such as hydrogenated amorphous silicon. Also included are those in which dangling bonds of atoms are terminated with hydrogen.
　次に、図５に示すように、第１のｉ型非晶質半導体膜２上に第１導電型非晶質半導体膜３を形成する。第１導電型非晶質半導体膜３の形成方法は特に限定されないが、たとえばプラズマＣＶＤ法を用いることができる。 Next, as shown in FIG. 5, a first conductivity type amorphous semiconductor film 3 is formed on the first i-type amorphous semiconductor film 2. Although the formation method of the 1st conductivity type amorphous semiconductor film 3 is not specifically limited, For example, plasma CVD method can be used.
　第１導電型非晶質半導体膜３としては、ｐ型非晶質シリコン膜を好適に用いることができるがｐ型非晶質シリコン膜に限定されず、たとえば従来から公知のｐ型非晶質半導体膜を用いることもできる。 As the first conductive type amorphous semiconductor film 3, a p-type amorphous silicon film can be preferably used. However, the first conductive type amorphous semiconductor film 3 is not limited to a p-type amorphous silicon film. A semiconductor film can also be used.
　なお、第１導電型非晶質半導体膜３に含まれるｐ型不純物としては、たとえばボロンを用いることができる。また、本明細書において、「ｐ型」とは、ｐ型不純物濃度が１×１０15個／ｃｍ3以上の状態を意味する。 As the p-type impurity contained in the first conductive type amorphous semiconductor film 3, for example, boron can be used. In this specification, “p-type” means a state where the p-type impurity concentration is 1 × 10 15 / cm 3 or more.
　次に、図６に示すように、第１導電型非晶質半導体膜３上に、第１のｉ型非晶質半導体膜２と第１導電型非晶質半導体膜３との積層体を厚さ方向にエッチングする箇所に開口部を有するフォトレジスト等のエッチングマスク３１を形成する。 Next, as shown in FIG. 6, a stacked body of the first i-type amorphous semiconductor film 2 and the first conductive-type amorphous semiconductor film 3 is formed on the first conductive-type amorphous semiconductor film 3. An etching mask 31 such as a photoresist having an opening at a portion to be etched in the thickness direction is formed.
　次に、図７に示すように、エッチングマスク３１をマスクとして、第１のｉ型非晶質半導体膜２と第１導電型非晶質半導体膜３との積層体の一部を厚さ方向にエッチングする。これにより、半導体基板１の裏面の一部を露出させる。その後、図８に示すように、エッチングマスク３１をすべて除去する。 Next, as shown in FIG. 7, using the etching mask 31 as a mask, a part of the stack of the first i-type amorphous semiconductor film 2 and the first conductive amorphous semiconductor film 3 is formed in the thickness direction. Etch into. Thereby, a part of the back surface of the semiconductor substrate 1 is exposed. Thereafter, as shown in FIG. 8, all the etching mask 31 is removed.
　次に、図９に示すように、半導体基板１および第１のｉ型非晶質半導体膜２と第１導電型非晶質半導体膜３との積層体を覆うようにして第２のｉ型非晶質半導体膜４を形成する。第２のｉ型非晶質半導体膜４の形成方法は特に限定されないが、たとえばプラズマＣＶＤ法を用いることができる。 Next, as shown in FIG. 9, the second i-type is formed so as to cover the semiconductor substrate 1 and the stacked body of the first i-type amorphous semiconductor film 2 and the first conductive-type amorphous semiconductor film 3. An amorphous semiconductor film 4 is formed. The method for forming the second i-type amorphous semiconductor film 4 is not particularly limited, and for example, a plasma CVD method can be used.
　第２のｉ型非晶質半導体膜４としては、ｉ型非晶質シリコン膜を好適に用いることができるがｉ型非晶質シリコン膜に限定されず、たとえば従来から公知のｉ型非晶質半導体膜を用いることもできる。 As the second i-type amorphous semiconductor film 4, an i-type amorphous silicon film can be suitably used, but is not limited to an i-type amorphous silicon film. For example, a conventionally known i-type amorphous silicon film is used. A quality semiconductor film can also be used.
　次に、図１０に示すように、第２のｉ型非晶質半導体膜４上に第２導電型非晶質半導体膜５を形成する。第２導電型非晶質半導体膜５の形成方法は特に限定されないが、たとえばプラズマＣＶＤ法を用いることができる。 Next, as shown in FIG. 10, a second conductivity type amorphous semiconductor film 5 is formed on the second i-type amorphous semiconductor film 4. Although the formation method of the 2nd conductivity type amorphous semiconductor film 5 is not specifically limited, For example, plasma CVD method can be used.
　第２導電型非晶質半導体膜５としては、ｎ型非晶質シリコン膜を好適に用いることができるがｎ型非晶質シリコン膜に限定されず、たとえば従来から公知のｎ型非晶質半導体膜を用いることもできる。 As the second conductive type amorphous semiconductor film 5, an n-type amorphous silicon film can be preferably used, but is not limited to an n-type amorphous silicon film. For example, a conventionally known n-type amorphous silicon film is used. A semiconductor film can also be used.
　なお、第２導電型非晶質半導体膜５を構成するｎ型非晶質シリコン膜に含まれるｎ型不純物としては、たとえばリンを用いることができる。また、本明細書において、「ｎ型」とは、ｎ型不純物濃度が１×１０15個／ｃｍ3以上の状態を意味する。 As the n-type impurity contained in the n-type amorphous silicon film constituting the second conductivity type amorphous semiconductor film 5, for example, phosphorus can be used. In this specification, “n-type” means a state where the n-type impurity concentration is 1 × 10 15 / cm 3 or more.
　次に、図１１に示すように、半導体基板１の裏面上の第２のｉ型非晶質半導体膜４と第２導電型非晶質半導体膜５との積層体を残す部分にのみフォトレジスト等のエッチングマスク３２を形成する。 Next, as shown in FIG. 11, the photoresist is applied only to the portion where the stacked body of the second i-type amorphous semiconductor film 4 and the second conductive type amorphous semiconductor film 5 is left on the back surface of the semiconductor substrate 1. Etching mask 32 is formed.
　次に、エッチングマスク３２をマスクとして、第２のｉ型非晶質半導体膜４と第２導電型非晶質半導体膜５との積層体の一部を厚さ方向にウエットエッチングすることによって、図１２に示すように、第１導電型非晶質半導体膜３の一部を露出させる。その後、エッチングマスク３２を完全に除去する。 Next, using the etching mask 32 as a mask, a part of the stacked body of the second i-type amorphous semiconductor film 4 and the second conductive type amorphous semiconductor film 5 is wet-etched in the thickness direction, As shown in FIG. 12, a part of the first conductive type amorphous semiconductor film 3 is exposed. Thereafter, the etching mask 32 is completely removed.
　次に、図１３に示すように、第１導電型非晶質半導体膜３に接するように第１電極１１を形成し、第２導電型非晶質半導体膜５に接するように第２電極１２を形成する。第１電極１１および第２電極１２の形成方法も特に限定されないが、たとえば蒸着法などを用いることができる。以上により、ヘテロ接合型バックコンタクトセル１０が完成する。 Next, as shown in FIG. 13, the first electrode 11 is formed so as to contact the first conductive type amorphous semiconductor film 3, and the second electrode 12 is set so as to contact the second conductive type amorphous semiconductor film 5. Form. A method for forming the first electrode 11 and the second electrode 12 is not particularly limited, and for example, an evaporation method or the like can be used. Thus, the heterojunction back contact cell 10 is completed.
　次に、配線シート２０の表面上に絶縁性接着剤（図示せず）を塗布した後に、図１４に示すように、ヘテロ接合型バックコンタクトセル１０と配線シート２０とを重ね合わせる。このとき、ヘテロ接合型バックコンタクトセル１０の第１電極１１が配線シート２０の第１配線２２に直接接するとともに、ヘテロ接合型バックコンタクトセル１０の第２電極１２が配線シート２０の第２配線２３に直接接するように、ヘテロ接合型バックコンタクトセル１０と配線シート２０とが重ね合わせられる。これにより、第１電極１１と第１配線２２とが電気的に接続されるとともに、第２電極１２と第２配線２３とが電気的に接続される。また、ヘテロ接合型バックコンタクトセル１０と配線シート２０とは、絶縁性接着剤を硬化させることによって固定され、機械的に接続される。 Next, after applying an insulating adhesive (not shown) on the surface of the wiring sheet 20, the heterojunction back contact cell 10 and the wiring sheet 20 are overlaid as shown in FIG. At this time, the first electrode 11 of the heterojunction back contact cell 10 is in direct contact with the first wiring 22 of the wiring sheet 20, and the second electrode 12 of the heterojunction back contact cell 10 is the second wiring 23 of the wiring sheet 20. The heterojunction back contact cell 10 and the wiring sheet 20 are overlapped so as to be in direct contact with each other. Thereby, the first electrode 11 and the first wiring 22 are electrically connected, and the second electrode 12 and the second wiring 23 are electrically connected. In addition, the heterojunction back contact cell 10 and the wiring sheet 20 are fixed and mechanically connected by curing an insulating adhesive.
　図１５に、実施形態１の光電変換装置を受光面側から見たときの模式的な平面図を示す。ここで、ヘテロ接合型バックコンタクトセル１０は、配線シート２０上に複数設置されているが、配線シート２０上に設置されるヘテロ接合型バックコンタクトセル１０の個数は特に限定されず、たとえば１個であってもよい。 FIG. 15 shows a schematic plan view of the photoelectric conversion device of Embodiment 1 as viewed from the light receiving surface side. Here, a plurality of heterojunction back contact cells 10 are installed on the wiring sheet 20, but the number of heterojunction back contact cells 10 installed on the wiring sheet 20 is not particularly limited, for example, one It may be.
　＜作用効果＞
　図１に示すように、実施形態１の光電変換装置においては、第１電極１１の幅Ｗ１と第１配線２２の幅Ｗ３とがＷ１≧Ｗ３の関係を満たしているとともに、第２電極１２の幅Ｗ２と第２配線２３の幅Ｗ４とがＷ２≧Ｗ４の関係を満たしている。これは、本発明者が、配線シート２０にヘテロ接合型バックコンタクトセル１０が電気的に接続された光電変換装置の特性を向上することについて鋭意検討した結果、見い出したものである。 <Effect>
As shown in FIG. 1, in the photoelectric conversion device of Embodiment 1, the width W1 of the first electrode 11 and the width W3 of the first wiring 22 satisfy the relationship of W1 ≧ W3, and the second electrode 12 The width W2 and the width W4 of the second wiring 23 satisfy the relationship of W2 ≧ W4. This has been found as a result of the inventor's earnest study on improving the characteristics of the photoelectric conversion device in which the heterojunction back contact cell 10 is electrically connected to the wiring sheet 20.
　すなわち、従来においては、上述のように、図１９に示される従来の配線シート付き太陽電池のように電極の幅方向の端が配線の幅方向の端からはみ出ないようにして、電極の表面にかかる電界強度の急激な増加を抑制し、イオンマイグレーションに起因する特性の低下を安定して抑制していた。 That is, conventionally, as described above, the end of the electrode in the width direction does not protrude from the end in the width direction of the wiring as in the conventional solar cell with a wiring sheet shown in FIG. Such a rapid increase in electric field intensity is suppressed, and a decrease in characteristics due to ion migration is stably suppressed.
　しかしながら、実施形態１の光電変換装置において、ヘテロ接合型バックコンタクトセル１０に光が入射することにより発生した電流は、配線シート２０の第１配線２２および第２配線２３から外部に取り出される。このとき、実施形態１の光電変換装置の特性を向上させるために、配線シート２０によって複数のヘテロ接合型バックコンタクトセル１０を直列に接続することが好ましいが、第１配線２２の幅Ｗ３および第２配線２３の幅Ｗ４との間に大きな差がある場合には、光電変換装置全体の電流量は、狭い幅の配線から取り出される、より少ない電流量となる。 However, in the photoelectric conversion device of the first embodiment, the current generated when light is incident on the heterojunction back contact cell 10 is taken out from the first wiring 22 and the second wiring 23 of the wiring sheet 20. At this time, in order to improve the characteristics of the photoelectric conversion device of Embodiment 1, it is preferable to connect the plurality of heterojunction back contact cells 10 in series by the wiring sheet 20, but the width W3 of the first wiring 22 and the first When there is a large difference between the width W4 of the two wirings 23, the current amount of the entire photoelectric conversion device becomes a smaller amount of current extracted from the narrow-width wiring.
　そのため、光電変換装置全体の電流量を大きくする観点からは、配線シート２０の第１配線２２の幅Ｗ３と第２配線２３の幅Ｗ４との間には大きな差がない方が好ましいが、第１配線２２の幅Ｗ３および第２配線２３の幅Ｗ４は、それぞれ、絶縁性基材２１の表面の面積の大きさに応じた所定の幅に特定される。 Therefore, from the viewpoint of increasing the current amount of the entire photoelectric conversion device, it is preferable that there is no large difference between the width W3 of the first wiring 22 and the width W4 of the second wiring 23 of the wiring sheet 20, The width W3 of the first wiring 22 and the width W4 of the second wiring 23 are specified as predetermined widths corresponding to the size of the surface area of the insulating base material 21, respectively.
　このような状況において、実施形態１の光電変換装置においては、第１電極１１の幅Ｗ１と第１配線２２の幅Ｗ３とがＷ１≧Ｗ３の関係を満たし、かつ第２電極１２の幅Ｗ２と第２配線２３の幅Ｗ４とがＷ２≧Ｗ４の関係を満たす構成とされている。そのため、配線シート２０の第１配線２２の幅Ｗ３および第２配線２３の幅Ｗ４がそれぞれどのような広さであっても、配線の幅よりも電極の幅の方が広くなるため、電極と配線との間の十分な接触面積を担保することができる。これにより、実施形態１においては、配線シート２０にヘテロ接合型バックコンタクトセル１０が電気的に接続された光電変換装置の特性を向上することができる。また、光電変換装置の特性をさらに向上する観点からは、Ｗ１＞Ｗ３およびＷ２＞Ｗ４のいずれか一方の関係が満たされていることが好ましく、Ｗ１＞Ｗ３およびＷ２＞Ｗ４の両方の関係が満たされていることがより好ましい。 Under such circumstances, in the photoelectric conversion device of Embodiment 1, the width W1 of the first electrode 11 and the width W3 of the first wiring 22 satisfy the relationship of W1 ≧ W3, and the width W2 of the second electrode 12 The width W4 of the second wiring 23 satisfies the relationship of W2 ≧ W4. Therefore, the width of the electrode is wider than the width of the wiring, regardless of the width W3 of the first wiring 22 and the width W4 of the second wiring 23 of the wiring sheet 20, respectively. A sufficient contact area with the wiring can be ensured. Thereby, in Embodiment 1, the characteristic of the photoelectric conversion apparatus by which the heterojunction type back contact cell 10 was electrically connected to the wiring sheet 20 can be improved. Further, from the viewpoint of further improving the characteristics of the photoelectric conversion device, it is preferable that one of the relations W1> W3 and W2> W4 is satisfied, and both the relations W1> W3 and W2> W4 are satisfied. More preferably.
　特に、図１に示すように、第１電極１１の幅Ｗ１方向の両端部１１ａがそれぞれ第１配線２２の幅Ｗ３方向の端部２２ａからはみ出している場合には、第１電極１１と第１配線２２との間のより広い接触面積を担保することができることから、光電変換装置の特性をさらに向上することができる傾向にある。 In particular, as shown in FIG. 1, when both end portions 11a of the first electrode 11 in the width W1 direction protrude from the end portions 22a of the first wiring 22 in the width W3 direction, the first electrode 11 and the first electrode 11 Since a wider contact area with the wiring 22 can be secured, the characteristics of the photoelectric conversion device tend to be further improved.
　また、第２電極１２の幅Ｗ２方向の両端部１２ａがそれぞれ第２配線２３の幅Ｗ４方向の端部２３ａからはみ出している場合にも、第２電極１２と第２配線２３との間のより広い接触面積を担保することができることから、光電変換装置の特性をさらに向上することができる傾向にある。 Further, when both end portions 12a of the second electrode 12 in the width W2 direction protrude from the end portions 23a of the second wiring 23 in the width W4 direction, respectively, the twisting between the second electrode 12 and the second wiring 23 is performed. Since a wide contact area can be secured, the characteristics of the photoelectric conversion device tend to be further improved.
　また、第１配線２２の全面が第１電極１１と電気的に接続されている場合にも、第１電極１１と第１配線２２との間のより広い接触面積を担保することができることから、光電変換装置の特性をさらに向上することができる傾向にある。 Further, even when the entire surface of the first wiring 22 is electrically connected to the first electrode 11, it is possible to ensure a wider contact area between the first electrode 11 and the first wiring 22. There exists a tendency which can further improve the characteristic of a photoelectric conversion apparatus.
　さらに、第２配線２３の全面が第２電極１２と電気的に接続されている場合にも、第２電極１２と第２配線２３との間のより広い接触面積を担保することができることから、光電変換装置の特性をさらに向上することができる傾向にある。 Furthermore, even when the entire surface of the second wiring 23 is electrically connected to the second electrode 12, it is possible to ensure a wider contact area between the second electrode 12 and the second wiring 23. There exists a tendency which can further improve the characteristic of a photoelectric conversion apparatus.
　［実施形態２］
　図１６に、実施形態２の光電変換装置の模式的な断面図を示す。実施形態２の光電変換装置は、第１電極１１と第１配線２２とが導電性接着材４１を介して電気的に接続されているとともに、第２電極１２と第２配線２３とが導電性接着材４１を介して電気的に接続されていることを特徴としている。 [Embodiment 2]
FIG. 16 is a schematic cross-sectional view of the photoelectric conversion device according to the second embodiment. In the photoelectric conversion device according to the second embodiment, the first electrode 11 and the first wiring 22 are electrically connected through the conductive adhesive 41, and the second electrode 12 and the second wiring 23 are conductive. It is characterized by being electrically connected through an adhesive 41.
　導電性接着材４１は、導電性を有しており、電極と配線とを接着できる材料を用いることができ、たとえば半田などを用いることができる。 The conductive adhesive 41 is conductive and can be made of a material that can bond the electrode and the wiring. For example, solder or the like can be used.
　実施形態２における上記以外の説明は実施形態１と同様であるため、その説明については繰り返さない。 Since the description other than the above in the second embodiment is the same as that in the first embodiment, the description thereof will not be repeated.
　［実施形態３］
　図１７に、実施形態３の光電変換装置の模式的な断面図を示す。実施形態３の光電変換装置は、第１電極１１の幅Ｗ１と第１配線２２の幅Ｗ３とがＷ１≧Ｗ３の関係を満たしているが、第２電極１２の幅Ｗ２と第２配線２３の幅Ｗ４とはＷ２≧Ｗ４の関係を満たしていないことを特徴としている。 [Embodiment 3]
FIG. 17 is a schematic cross-sectional view of the photoelectric conversion device according to the third embodiment. In the photoelectric conversion device of the third embodiment, the width W1 of the first electrode 11 and the width W3 of the first wiring 22 satisfy the relationship of W1 ≧ W3, but the width W2 of the second electrode 12 and the width of the second wiring 23 The width W4 is characterized by not satisfying the relationship of W2 ≧ W4.
　この場合でも、第１電極１１と第１配線２２との間の十分な接触面積を担保することができるため、配線シート２０にヘテロ接合型バックコンタクトセル１０が電気的に接続された光電変換装置の特性を向上することができる。 Even in this case, since a sufficient contact area between the first electrode 11 and the first wiring 22 can be secured, the photoelectric conversion device in which the heterojunction back contact cell 10 is electrically connected to the wiring sheet 20. The characteristics can be improved.
　実施形態３における上記以外の説明は実施形態１および２と同様であるため、その説明については繰り返さない。 Since the description other than the above in the third embodiment is the same as that in the first and second embodiments, the description thereof will not be repeated.
　［実施形態４］
　図１８（ａ）に実施形態４の光電変換装置の製造工程の一部を図解する模式的な断面図を示し、図１８（ｂ）に実施形態４の光電変換装置の模式的な断面図を示す。 [Embodiment 4]
FIG. 18A shows a schematic cross-sectional view illustrating a part of the manufacturing process of the photoelectric conversion device of the fourth embodiment, and FIG. 18B shows a schematic cross-sectional view of the photoelectric conversion device of the fourth embodiment. Show.
　実施形態４の光電変換装置は、第１電極１１と第１配線２２との接合および第２電極１２と第２配線２３との接合に上述の絶縁性接着剤および導電性接着材４１を用いることなく、ヘテロ接合型バックコンタクトセル１０と配線シート２０との位置合わせを行った後、たとえば図１８（ａ）に示すような真空ラミネートによって、ヘテロ接合型バックコンタクトセル１０と配線シート２０とを密着させて、第１電極１１と第１配線２２との電気的な接続および第２電極１２と第２配線２３との電気的な接続を行うことを特徴としている。これにより、実施形態１の光電変換装置と同様に、図１８（ｂ）に示す第１電極１１の幅Ｗ１と第１配線２２の幅Ｗ３とがＷ１≧Ｗ３の関係を満たし、かつ第２電極１２の幅Ｗ２と第２配線２３の幅Ｗ４とがＷ２≧Ｗ４の関係を満たす実施形態４の光電変換装置が得られる。 The photoelectric conversion device of Embodiment 4 uses the above-described insulating adhesive and conductive adhesive 41 for joining the first electrode 11 and the first wiring 22 and joining the second electrode 12 and the second wiring 23. After the heterojunction back contact cell 10 and the wiring sheet 20 are aligned, the heterojunction back contact cell 10 and the wiring sheet 20 are adhered to each other by, for example, vacuum lamination as shown in FIG. Thus, the electrical connection between the first electrode 11 and the first wiring 22 and the electrical connection between the second electrode 12 and the second wiring 23 are performed. Thereby, similarly to the photoelectric conversion device of Embodiment 1, the width W1 of the first electrode 11 and the width W3 of the first wiring 22 shown in FIG. 18B satisfy the relationship of W1 ≧ W3, and the second electrode. Thus, the photoelectric conversion device of Embodiment 4 in which the width W2 of 12 and the width W4 of the second wiring 23 satisfy the relationship of W2 ≧ W4 is obtained.
　実施形態４における上記以外の説明は実施形態１～３と同様であるため、その説明については繰り返さない。 Since the description other than the above in the fourth embodiment is the same as that in the first to third embodiments, the description thereof will not be repeated.
　［付記］
　（１）ここで開示された実施形態は、ヘテロ接合型バックコンタクトセルと、ヘテロ接合型バックコンタクトセルと電気的に接続されている配線シートとを備え、ヘテロ接合型バックコンタクトセルは、第１導電型または第２導電型の半導体基板と、半導体基板の一方の側に設けられた第１導電型非晶質半導体膜と、第２導電型非晶質半導体膜と、第１導電型非晶質半導体膜上の第１電極と、第２導電型非晶質半導体膜上の第２電極とを備え、配線シートは、絶縁性基材と、絶縁性基材上の第１配線と、第２配線とを備え、第１電極は第１配線に電気的に接続され、第２電極は第２配線に電気的に接続されており、第１電極の幅が第１配線の幅以上であることおよび第２電極の幅が第２配線の幅以上であることの少なくとも一方の関係が満たされている光電変換装置である。実施形態の光電変換装置においては、第１電極の幅が第１配線の幅以上であることおよび第２電極の幅が第２配線の幅以上であることの少なくとも一方の関係が満たされているため、電極と配線との間の十分な接触面積を担保することができ、光電変換装置の特性を向上することができる。 [Appendix]
(1) The embodiment disclosed herein includes a heterojunction back contact cell and a wiring sheet electrically connected to the heterojunction back contact cell. Conductive type or second conductive type semiconductor substrate, first conductive type amorphous semiconductor film provided on one side of the semiconductor substrate, second conductive type amorphous semiconductor film, and first conductive type amorphous semiconductor A first electrode on the porous semiconductor film and a second electrode on the second conductive type amorphous semiconductor film, the wiring sheet comprising: an insulating base; a first wiring on the insulating base; Two wirings, the first electrode is electrically connected to the first wiring, the second electrode is electrically connected to the second wiring, and the width of the first electrode is equal to or greater than the width of the first wiring. And at least one of the relation that the width of the second electrode is equal to or larger than the width of the second wiring is satisfied. A photoelectric conversion device being. In the photoelectric conversion device of the embodiment, at least one of the relationship that the width of the first electrode is equal to or larger than the width of the first wiring and the width of the second electrode is equal to or larger than the width of the second wiring is satisfied. Therefore, a sufficient contact area between the electrode and the wiring can be ensured, and the characteristics of the photoelectric conversion device can be improved.
　（２）ここで開示された実施形態において、第１配線および第２配線は、それぞれ、帯状であることが好ましい。この場合にも、光電変換装置の特性を向上することができる。 (2) In the embodiment disclosed herein, it is preferable that the first wiring and the second wiring each have a strip shape. Also in this case, the characteristics of the photoelectric conversion device can be improved.
　（３）ここで開示された実施形態において、第１電極および第２電極は、それぞれ、帯状であることが好ましい。この場合にも、光電変換装置の特性を向上することができる。 (3) In the embodiment disclosed herein, it is preferable that the first electrode and the second electrode each have a strip shape. Also in this case, the characteristics of the photoelectric conversion device can be improved.
　（４）ここで開示された実施形態において、第１電極の幅方向の両端部がそれぞれ、第１配線の幅方向の端部からはみ出していることが好ましい。この場合には、第１電極と第１配線との間のより広い接触面積を担保することができることから、光電変換装置の特性をさらに向上することができる傾向にある。 (4) In the embodiment disclosed herein, it is preferable that both end portions in the width direction of the first electrode protrude from the end portions in the width direction of the first wiring. In this case, since a wider contact area between the first electrode and the first wiring can be ensured, the characteristics of the photoelectric conversion device tend to be further improved.
　（５）ここで開示された実施形態において、第２電極の幅方向の両端部がそれぞれ、第２配線の幅方向の端部からはみ出していることが好ましい。この場合には、第２電極と第２配線との間のより広い接触面積を担保することができることから、光電変換装置の特性をさらに向上することができる傾向にある。 (5) In the embodiment disclosed herein, it is preferable that both end portions in the width direction of the second electrode protrude from the end portions in the width direction of the second wiring. In this case, since a wider contact area between the second electrode and the second wiring can be secured, the characteristics of the photoelectric conversion device tend to be further improved.
　（６）ここで開示された実施形態において、第１配線の全面が、第１電極と電気的に接続されていることが好ましい。この場合にも、第１電極と第１配線との間のより広い接触面積を担保することができることから、光電変換装置の特性をさらに向上することができる傾向にある。 (6) In the embodiment disclosed herein, the entire surface of the first wiring is preferably electrically connected to the first electrode. Also in this case, since a wider contact area between the first electrode and the first wiring can be secured, the characteristics of the photoelectric conversion device tend to be further improved.
　（７）ここで開示された実施形態において、第２配線の全面が、第２電極と電気的に接続されていることが好ましい。この場合にも、第２電極と第２配線との間のより広い接触面積を担保することができることから、光電変換装置の特性をさらに向上することができる傾向にある。 (7) In the embodiment disclosed herein, the entire surface of the second wiring is preferably electrically connected to the second electrode. Also in this case, since a wider contact area between the second electrode and the second wiring can be ensured, the characteristics of the photoelectric conversion device tend to be further improved.
　（８）ここで開示された実施形態において、第１電極と第１配線との電気的な接続は、第１電極と第１配線との直接接触、および第１電極と第１配線との間の導電性接着材の少なくとも一方により行われていることが好ましい。この場合にも、光電変換装置の特性を向上することができる。 (8) In the embodiment disclosed herein, the electrical connection between the first electrode and the first wiring is performed by direct contact between the first electrode and the first wiring and between the first electrode and the first wiring. It is preferable that this is performed by at least one of the conductive adhesives. Also in this case, the characteristics of the photoelectric conversion device can be improved.
　（９）ここで開示された実施形態において、第２電極と第２配線との電気的な接続は、第２電極と第２配線との直接接触、および第２電極と第２配線との間の導電性接着材の少なくとも一方により行われていることが好ましい。この場合にも、光電変換装置の特性を向上することができる。 (9) In the embodiment disclosed herein, the electrical connection between the second electrode and the second wiring is between the direct contact between the second electrode and the second wiring and between the second electrode and the second wiring. It is preferable that this is performed by at least one of the conductive adhesives. Also in this case, the characteristics of the photoelectric conversion device can be improved.
　（１０）ここで開示された実施形態において、半導体基板は、ｎ型結晶シリコンを含むことが好ましい。この場合にも、光電変換装置の特性を向上することができる。 (10) In the embodiment disclosed herein, the semiconductor substrate preferably includes n-type crystalline silicon. Also in this case, the characteristics of the photoelectric conversion device can be improved.
　（１１）ここで開示された実施形態は、半導体基板と第１導電型非晶質半導体膜との間の第１のｉ型非晶質半導体膜と、半導体基板と第２導電型非晶質半導体膜との間の第２のｉ型非晶質半導体膜とをさらに含むことが好ましい。この場合にも、光電変換装置の特性を向上することができる。 (11) In the embodiment disclosed herein, the first i-type amorphous semiconductor film between the semiconductor substrate and the first conductive type amorphous semiconductor film, the semiconductor substrate and the second conductive type amorphous semiconductor It is preferable to further include a second i-type amorphous semiconductor film between the semiconductor film. Also in this case, the characteristics of the photoelectric conversion device can be improved.
　（１２）ここで開示された実施形態において、第１のｉ型非晶質半導体膜は、ｉ型非晶質シリコンを含むことが好ましい。この場合にも、光電変換装置の特性を向上することができる。 (12) In the embodiment disclosed herein, the first i-type amorphous semiconductor film preferably contains i-type amorphous silicon. Also in this case, the characteristics of the photoelectric conversion device can be improved.
　（１３）ここで開示された実施形態において、第２のｉ型非晶質半導体膜は、ｉ型非晶質シリコンを含むことが好ましい。この場合にも、光電変換装置の特性を向上することができる。 (13) In the embodiment disclosed herein, the second i-type amorphous semiconductor film preferably includes i-type amorphous silicon. Also in this case, the characteristics of the photoelectric conversion device can be improved.
　（１４）ここで開示された実施形態において、半導体基板と第１のｉ型非晶質半導体膜とが接していることが好ましい。 (14) In the embodiment disclosed herein, it is preferable that the semiconductor substrate and the first i-type amorphous semiconductor film are in contact with each other.
　（１５）ここで開示された実施形態において、半導体基板と第２のｉ型非晶質半導体膜とが接していることが好ましい。この場合にも、光電変換装置の特性を向上することができる。 (15) In the embodiment disclosed herein, the semiconductor substrate and the second i-type amorphous semiconductor film are preferably in contact with each other. Also in this case, the characteristics of the photoelectric conversion device can be improved.
　（１６）ここで開示された実施形態において、第１のｉ型非晶質半導体膜と第１導電型非晶質半導体膜とが接していることが好ましい。この場合にも、光電変換装置の特性を向上することができる。 (16) In the embodiment disclosed herein, it is preferable that the first i-type amorphous semiconductor film and the first conductive amorphous semiconductor film are in contact with each other. Also in this case, the characteristics of the photoelectric conversion device can be improved.
　（１７）ここで開示された実施形態において、第２のｉ型非晶質半導体膜と第２導電型非晶質半導体膜とが接していることが好ましい。この場合にも、光電変換装置の特性を向上することができる。 (17) In the embodiment disclosed herein, it is preferable that the second i-type amorphous semiconductor film and the second conductivity-type amorphous semiconductor film are in contact with each other. Also in this case, the characteristics of the photoelectric conversion device can be improved.
　（１８）ここで開示された実施形態において、第１導電型非晶質半導体膜と第２導電型非晶質半導体膜との間に第２のｉ型非晶質半導体膜の端部が位置していることが好ましい。この場合にも、光電変換装置の特性を向上することができる。 (18) In the embodiment disclosed herein, the end of the second i-type amorphous semiconductor film is located between the first conductive-type amorphous semiconductor film and the second conductive-type amorphous semiconductor film. It is preferable. Also in this case, the characteristics of the photoelectric conversion device can be improved.
　（１９）ここで開示された実施形態において、第２のｉ型非晶質半導体膜の端部が、第１導電型非晶質半導体膜および第２導電型非晶質半導体膜のそれぞれと接していることが好ましい。この場合にも、光電変換装置の特性を向上することができる。 (19) In the embodiment disclosed herein, the end of the second i-type amorphous semiconductor film is in contact with each of the first conductive type amorphous semiconductor film and the second conductive type amorphous semiconductor film. It is preferable. Also in this case, the characteristics of the photoelectric conversion device can be improved.
　（２０）ここで開示された実施形態は、第１電極および第２電極を備えたヘテロ接合型バックコンタクトセルを作製する工程と、第１配線および第２配線を備えた配線シートを準備する工程と、ヘテロ接合型バックコンタクトセルの第１電極と配線シートの第１配線とを電気的に接続する工程と、ヘテロ接合型バックコンタクトセルの第２電極と配線シートの第２配線とを電気的に接続する工程と、を含み、ヘテロ接合型バックコンタクトセルは、第１導電型または第２導電型の半導体基板と、半導体基板の一方の側に設けられた、第１導電型非晶質半導体膜と、第２導電型非晶質半導体膜と、第１電極は、第１導電型非晶質半導体膜上に設けられ、第２電極は、第２導電型非晶質半導体膜上に設けられており、配線シートは、絶縁性基材を備え、第１配線および第２配線は絶縁性基材上に設けられており、第１電極の幅が第１配線の幅以上であること、および第２電極の幅が第２配線の幅以上であることの少なくとも一方の関係が満たされている光電変換装置の製造方法である。実施形態の光電変換装置の製造方法においては、第１電極の幅が第１配線の幅以上であることおよび第２電極の幅が第２配線の幅以上であることの少なくとも一方の関係が満たされているため、電極と配線との間の十分な接触面積を担保することができ、特性が向上した光電変換装置を作製することができる。 (20) The embodiment disclosed herein includes a step of manufacturing a heterojunction back contact cell including a first electrode and a second electrode, and a step of preparing a wiring sheet including the first wiring and the second wiring. Electrically connecting the first electrode of the heterojunction back contact cell and the first wiring of the wiring sheet; and electrically connecting the second electrode of the heterojunction back contact cell and the second wiring of the wiring sheet. The heterojunction back contact cell includes a first conductivity type or second conductivity type semiconductor substrate, and a first conductivity type amorphous semiconductor provided on one side of the semiconductor substrate. The film, the second conductive amorphous semiconductor film, and the first electrode are provided on the first conductive amorphous semiconductor film, and the second electrode is provided on the second conductive amorphous semiconductor film. The wiring sheet is made of an insulating substrate The first wiring and the second wiring are provided on an insulating substrate, the width of the first electrode is equal to or larger than the width of the first wiring, and the width of the second electrode is equal to or larger than the width of the second wiring. This is a method for manufacturing a photoelectric conversion device in which at least one of the relationships is satisfied. In the method for manufacturing a photoelectric conversion device according to the embodiment, at least one of the relationship that the width of the first electrode is equal to or larger than the width of the first wiring and the width of the second electrode is equal to or larger than the width of the second wiring is satisfied. Therefore, a sufficient contact area between the electrode and the wiring can be ensured, and a photoelectric conversion device with improved characteristics can be manufactured.
　（２１）ここで開示された実施形態において、ヘテロ接合型バックコンタクトセルを作製する工程は、第１導電型または第２導電型の半導体基板の一方の側に第１導電型非晶質半導体膜を形成する工程と、第１導電型非晶質半導体膜の一部を厚さ方向に除去することによって半導体基板の一部を露出させる工程と、半導体基板および第１導電型非晶質半導体膜上に第２導電型非晶質半導体膜を形成する工程と、第１導電型非晶質半導体膜上に第１電極を形成する工程と、第２導電型非晶質半導体膜上に第２電極を形成する工程とを含むことが好ましい。この場合にも、特性が向上した光電変換装置を作製することができる。 (21) In the embodiment disclosed herein, the step of fabricating the heterojunction back contact cell includes the step of forming a first conductivity type amorphous semiconductor film on one side of the first conductivity type or second conductivity type semiconductor substrate. Forming a semiconductor substrate, exposing a part of the semiconductor substrate by removing a part of the first conductive amorphous semiconductor film in a thickness direction, and the semiconductor substrate and the first conductive amorphous semiconductor film Forming a second conductive type amorphous semiconductor film thereon; forming a first electrode on the first conductive type amorphous semiconductor film; and second forming a second conductive type amorphous semiconductor film on the second conductive type amorphous semiconductor film. A step of forming an electrode. Also in this case, a photoelectric conversion device with improved characteristics can be manufactured.
　（２２）ここで開示された実施形態において、第１導電型非晶質半導体膜を形成する工程は、半導体基板の一方の側に第１のｉ型非晶質半導体膜を形成する工程と、第１のｉ型非晶質半導体膜上に第１導電型非晶質半導体膜を形成する工程とを含み、第２導電型非晶質半導体膜を形成する工程は、半導体基板および第１導電型非晶質半導体膜上に第２のｉ型非晶質半導体膜を形成する工程と、第２のｉ型非晶質半導体膜上に第２導電型非晶質半導体膜を形成する工程とを含むことが好ましい。この場合にも、特性が向上した光電変換装置を作製することができる。 (22) In the embodiment disclosed herein, the step of forming the first conductive type amorphous semiconductor film includes the step of forming the first i-type amorphous semiconductor film on one side of the semiconductor substrate; Forming a first conductivity type amorphous semiconductor film on the first i-type amorphous semiconductor film, and the step of forming the second conductivity type amorphous semiconductor film includes a step of forming the semiconductor substrate and the first conductivity type. Forming a second i-type amorphous semiconductor film on the second i-type amorphous semiconductor film, forming a second conductive amorphous semiconductor film on the second i-type amorphous semiconductor film, and It is preferable to contain. Also in this case, a photoelectric conversion device with improved characteristics can be manufactured.
　（２３）ここで開示された実施形態において、第１電極と第１配線との電気的な接続は第１電極と第１配線との直接接触、および第１電極と第１配線との間の導電性接着材による接着の少なくとも一方により行われることが好ましい。この場合にも、特性が向上した光電変換装置を作製することができる。 (23) In the embodiment disclosed herein, the electrical connection between the first electrode and the first wiring is a direct contact between the first electrode and the first wiring, and between the first electrode and the first wiring. It is preferably performed by at least one of adhesion by a conductive adhesive. Also in this case, a photoelectric conversion device with improved characteristics can be manufactured.
　（２４）ここで開示された実施形態において、第２電極と第２配線との電気的な接続は第２電極と第２配線との直接接触、および第２電極と第２配線との間の導電性接着材による接着の少なくとも一方により行われることが好ましい。この場合にも、特性が向上した光電変換装置を作製することができる。 (24) In the embodiment disclosed herein, the electrical connection between the second electrode and the second wiring is the direct contact between the second electrode and the second wiring, and between the second electrode and the second wiring. It is preferably performed by at least one of adhesion by a conductive adhesive. Also in this case, a photoelectric conversion device with improved characteristics can be manufactured.
　以上のように本発明の実施形態について説明を行なったが、上述の各実施形態の構成を適宜組み合わせることも当初から予定している。 As described above, the embodiments of the present invention have been described, but it is also planned from the beginning to appropriately combine the configurations of the above-described embodiments.
　今回開示された実施形態はすべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は上記した説明ではなくて請求の範囲によって示され、請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。 The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.
　ここで開示された実施形態の光電変換装置および光電変換装置の製造方法は、ヘテロ接合型バックコンタクトセルを配線シートで電気的に接続した光電変換モジュールおよび光電変換モジュールの製造方法に好適に利用することができる。 The photoelectric conversion device and the method for manufacturing a photoelectric conversion device disclosed herein are preferably used for a photoelectric conversion module in which heterojunction back contact cells are electrically connected by a wiring sheet and a method for manufacturing the photoelectric conversion module. be able to.
　１　半導体基板、２　第１のｉ型非晶質半導体膜、３　第１導電型非晶質半導体膜、４　第２のｉ型非晶質半導体膜、５　第２導電型非晶質半導体膜、１０　ヘテロ接合型バックコンタクトセル、１１　第１電極、１１ａ　端部、１２　第２電極、１２ａ　端部、２０　配線シート、２１　絶縁性基材、２２　第１配線、２２ａ　端部、２３　第２配線、２３ａ　端部、２４　集電用配線、３１，３２　エッチングマスク、１００　裏面電極型太陽電池セル、１０１　基板、１０２　ｎ型不純物拡散領域、１０３　ｐ型不純物拡散領域、１１１　ｎ型用銀電極、１１２　ｐ型用銀電極、２００　配線シート、２０１　絶縁性基材、２０２　ｎ型用銅配線、２０３　ｐ型用銅配線、３００　絶縁性樹脂。 1. Semiconductor substrate, 2. First i-type amorphous semiconductor film, 3. First conductivity-type amorphous semiconductor film, 4. Second i-type amorphous semiconductor film, 5. Second conductivity-type amorphous semiconductor film, 10 heterojunction back contact cell, 11 first electrode, 11a end, 12 second electrode, 12a end, 20 wiring sheet, 21 insulating substrate, 22 first wiring, 22a end, 23 second wiring, 23a end, 24 current collecting wiring, 31, 32 etching mask, 100 back electrode type solar cell, 101 substrate, 102 n type impurity diffusion region, 103 p type impurity diffusion region, 111 n type silver electrode, 112 p Silver electrode for mold, 200 wiring sheet, 201 insulating base material, 202 n-type copper wiring, 203 p-type copper wiring, 300 insulating resin.

Claims (5)

  1. 　ヘテロ接合型バックコンタクトセルと、
    　前記ヘテロ接合型バックコンタクトセルと電気的に接続されている配線シートと、を備え、
    　前記ヘテロ接合型バックコンタクトセルは、
    　第１導電型または第２導電型の半導体基板と、
    　前記半導体基板の一方の側に設けられた、第１導電型非晶質半導体膜と、第２導電型非晶質半導体膜と、
    　前記第１導電型非晶質半導体膜上の第１電極と、
    　前記第２導電型非晶質半導体膜上の第２電極と、を備え、
    　前記配線シートは、
    　絶縁性基材と、
    　前記絶縁性基材上の第１配線と、第２配線と、を備え、
    　前記第１電極は、前記第１配線に電気的に接続され、
    　前記第２電極は、前記第２配線に電気的に接続されており、
    　前記第１電極の幅が前記第１配線の幅以上であること、および前記第２電極の幅が前記第２配線の幅以上であることの少なくとも一方の関係が満たされている、光電変換装置。     A heterojunction back contact cell;
    A wiring sheet electrically connected to the heterojunction back contact cell,
    The heterojunction back contact cell is
    A semiconductor substrate of a first conductivity type or a second conductivity type;
    A first conductive amorphous semiconductor film, a second conductive amorphous semiconductor film provided on one side of the semiconductor substrate;
    A first electrode on the first conductive type amorphous semiconductor film;
    A second electrode on the second conductive type amorphous semiconductor film,
    The wiring sheet is
    An insulating substrate;
    A first wiring on the insulating substrate; and a second wiring;
    The first electrode is electrically connected to the first wiring;
    The second electrode is electrically connected to the second wiring;
    A photoelectric conversion device satisfying at least one of a relationship that the width of the first electrode is equal to or larger than the width of the first wiring and the width of the second electrode is equal to or larger than the width of the second wiring. .
  2. 　前記第１配線および前記第２配線は、それぞれ、帯状である、請求項１に記載の光電変換装置。 The photoelectric conversion device according to claim 1, wherein each of the first wiring and the second wiring has a strip shape.
  3. 　前記第１電極および前記第２電極は、それぞれ、帯状である、請求項１または請求項２に記載の光電変換装置。 The photoelectric conversion device according to claim 1 or 2, wherein each of the first electrode and the second electrode has a strip shape.
  4. 　前記第１電極の幅方向の両端部がそれぞれ、前記第１配線の幅方向の端部からはみ出している、請求項１～請求項３のいずれか１項に記載の光電変換装置。 The photoelectric conversion device according to any one of claims 1 to 3, wherein both end portions in the width direction of the first electrode protrude from end portions in the width direction of the first wiring.
  5. 　前記第２電極の幅方向の両端部がそれぞれ、前記第２配線の幅方向の端部からはみ出している、請求項１～請求項４のいずれか１項に記載の光電変換装置。 5. The photoelectric conversion device according to claim 1, wherein both end portions in the width direction of the second electrode protrude from end portions in the width direction of the second wiring.
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