WO2016024585A1 - 有機tftアレイ検査装置及びその方法 - Google Patents
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Definitions
- the present invention relates to an inspection apparatus and method for an organic semiconductor thin film transistor (TFT) array, and more particularly to an inspection apparatus capable of detecting disconnection defects in the array and evaluating variations in output characteristics and response speed of each TFT element. And its method.
- TFT organic semiconductor thin film transistor
- TFT arrays Thin film transistor arrays using organic semiconductors (hereinafter referred to as “TFT arrays”) are used as image display devices such as liquid crystal displays and organic EL displays.
- TFT array has a circuit configuration in which a plurality of organic TFT elements are arranged in a matrix corresponding to the pixels of the image display device.
- the corresponding organic TFT element does not operate normally and the so-called pixel does not emit light. It will be in a missing state.
- the TFT elements constituting the TFT array have variations in output characteristics or response speed, stable moving image display cannot be performed.
- Patent Documents 1 and 2 in a field emission display (FED) or a liquid crystal display (LCD) panel, the signal line S is grounded and an appropriate DC voltage is supplied to the gate line G.
- An inspection method for imaging is disclosed.
- the portion When the signal line S and the gate line G are short-circuited, the portion generates heat and emits infrared rays. Therefore, when this is imaged with an infrared camera, the radiation point, that is, the short-circuited portion can be detected.
- Non-Patent Documents 1 and 2 in an organic semiconductor thin film that provides a channel layer of an organic TFT element, a state in which carriers are accumulated by applying a gate voltage, and a state in which carriers are depleted without applying a gate voltage. Describes that the light transmittance and the light reflectance change slightly, and the amount of change is proportional to the amount of accumulated carriers, that is, the output current. By utilizing such a phenomenon, it is considered that not only the detection of the disconnection defect in the TFT array but also the variation in output characteristics and response speed of each TFT element can be evaluated.
- All the signal lines S of the TFT array are grounded, and the TFT array is imaged before and after a suitable DC voltage is applied to the gate line G, and the difference between the two images is acquired.
- a difference image appears in the TFT element in which carriers are accumulated by applying a gate voltage.
- the signal line S or the gate line G is disconnected or the organic semiconductor thin film of the TFT element is defective, the corresponding TFT element is There is no accumulation and no difference image appears. According to this, the disconnection as described above can be detected. Further, the variation in output characteristics of each TFT element is reflected in the amount of accumulated carriers, and thus appears as a difference in the difference image of each TFT element. On the other hand, the difference image due to the accumulation of carriers is delicate and is very difficult to distinguish.
- the present invention has been made in view of the situation as described above, and its object is to optically measure the presence or absence of carrier accumulation in an organic semiconductor thin film that provides a channel layer of an organic TFT element, It is an object of the present invention to provide an inspection apparatus and method capable of detecting a disconnection defect in a TFT array and / or evaluating variations in output characteristics and response speed of each TFT element.
- the present invention uses charge modulation spectroscopy (CMS) imaging to acquire a difference image due to accumulation of carriers in a TFT element, detect disconnection defects in the TFT array, and / or output characteristics of each TFT element. It is intended to evaluate the response speed variation.
- CMS charge modulation spectroscopy
- the organic TFT array inspection method is a method for optically imaging and inspecting an organic semiconductor thin film transistor (TFT) array, in which a source and a drain are short-circuited in each organic TFT.
- the voltage is turned on and off at a predetermined cycle in between, and the difference image is obtained by performing imaging before and after voltage application in synchronism with the predetermined cycle while irradiating monochromatic light.
- a step of integrating a plurality of the difference images may be included.
- the contrast of the difference image can be increased, and the disconnection defect in the TFT array can be accurately detected.
- the above-described invention may include a step of inspecting an individual difference of each organic TFT from a contrast difference of the difference image for each portion corresponding to the organic TFT. According to this invention, variation in output characteristics of each TFT element can be accurately evaluated.
- the method may include a step of obtaining the difference image by changing the predetermined period and inspecting a response speed difference of each organic TFT.
- the imaging includes a step of starting each time the voltage is turned on and off and after a lapse of a predetermined time, changing the predetermined time to obtain the difference image, and inspecting a response speed difference of each organic TFT. This may be a feature. According to this invention, variation in response speed of each TFT element can be accurately evaluated.
- the organic TFT array inspection apparatus is an inspection apparatus that optically images and inspects an organic semiconductor thin film transistor (TFT) array, and short-circuits the source and drain of each organic TFT.
- a function generator that turns on and off the voltage in a predetermined cycle, a light source that emits monochromatic light, an imaging device that performs imaging before and after the application of voltage in synchronization with the predetermined cycle, and a difference image before and after the application of the voltage
- an image analysis device for obtaining the above.
- the image analysis device may include integration processing means for performing integration processing on a plurality of the difference images. According to this invention, the contrast of the difference image can be increased, and the disconnection defect in the TFT array can be accurately detected.
- the image analysis apparatus may include an individual difference inspection unit that inspects an individual difference of each organic TFT from a contrast difference of the difference image for each portion corresponding to the organic TFT. According to this invention, variation in output characteristics of each TFT element can be accurately evaluated.
- the image processing apparatus further includes control means for changing the predetermined period by the function generator to give the difference image
- the image analysis apparatus includes response speed difference inspection means for inspecting a response speed difference of each organic TFT.
- the image analysis apparatus further includes a control unit that starts the imaging after the elapse of a predetermined time with each of the voltage on and off, and gives the difference image
- the image analysis apparatus is a response that inspects a difference in response speed of each organic TFT.
- a speed difference inspection unit may be included. According to this invention, variation in response speed of each TFT element can be accurately evaluated.
- FIG. 6 is a timing diagram of gate voltage, imaging trigger, and element response.
- FIG. 6 is a timing diagram of gate voltage, imaging trigger, and element response.
- 5 is a graph showing the wavelength dependence of the light transmittance change rate ( ⁇ T / T) in an organic semiconductor film. It is a figure which shows a circuit diagram and its state. It is sectional drawing which shows the structure of organic TFT.
- FIG. 2 shows a device according to the invention. It is a figure which shows the connection state of organic TFT. It is a figure which shows the repetition period of a gate voltage and imaging
- the TFT array 1 includes organic TFT elements 10 corresponding to the number of pixels.
- a gate line G and a signal line S are electrically connected to the organic semiconductor thin film 10a (see FIG. 8) of each organic TFT element 10.
- the organic semiconductor thin film 10a, the gate line G, and the signal line S have defects such as a short circuit L1 and a disconnection L2, the organic TFT element 10 related thereto does not operate, and the corresponding pixel cannot emit light. .
- the TFT array 1 is imaged by the camera 20 while irradiating light from the light source 15 with the signal line S of the TFT array 1 grounded and with the voltage applied to the gate line G and with no voltage applied. To do.
- a difference (CMS) image appears only in the TFT element 10 in which carriers are accumulated by applying the voltage to the gate line G. If any one of the gate line G, the signal line S, and the organic semiconductor thin film 10a (see FIG. 8) is disconnected (for example, L2) or defective (for example, L1, here “short circuit”), No carrier is accumulated in the corresponding TFT element 10 and no difference image appears. That is, in this method, the defect is specified from the part where the difference image does not appear.
- the TFT array 1 can be compared by comparing the contrast strength of each TFT element 10.
- the variation in output current among the TFT elements 10 included in the TFT can be evaluated.
- a defect is detected by utilizing the fact that the light transmittance and / or reflectance of the organic semiconductor thin film 10a (see FIG. 8) slightly changes between a carrier accumulation state and a depletion state.
- the rate of change of light transmittance / reflectance is proportional to the amount of accumulated carriers. Under typical TFT element driving conditions, this rate of change is as low as about 10 ⁇ 3, and integration processing is used to detect such a small rate of change.
- Non-Patent Document 1 a silicon oxide film (dielectric constant 3.8, thickness 100 nm) is used as a gate insulating film, and a carrier having a concentration of 4 ⁇ 10 12 cm ⁇ 2 is applied to the organic semiconductor layer (pentacene). It states that when accumulated, the rate of change in reflectivity was 4 ⁇ 10 ⁇ 3 .
- a TFT array that uses a polymer that can be formed by a coating process as a gate insulating film
- a fluoropolymer CYTOP Asahi Glass Co., Ltd., dielectric constant 1.9, thickness 1 ⁇ m
- the accumulated carrier amount is It is about 1/10 (4 ⁇ 10 11 cm ⁇ 2 ) of Non-Patent Document 1, and the rate of change is further reduced to 4 ⁇ 10 ⁇ 4 .
- the signal intensity of the image obtained by the CMS imaging method includes temporal fluctuations in the intensity of the light source 15 and the sensitivity of the camera 20.
- the light transmittance and / or reflectance change rate to be detected is on the order of 10 ⁇ 4 , the fluctuation is smaller than this fluctuation, and the difference between these images (images) is accumulated in the carrier accumulation state and the depletion state, respectively. Even if it is taken, it is countered by temporal fluctuations and cannot be detected.
- the function generator 30 can be used to modulate the carrier accumulation state and the depletion state, that is, as described later, with the gate voltage applied and with the gate voltage released.
- a modulation frequency is 15 Hz to 1 MHz, more preferably 200 Hz to 1 MHz. This is because the high modulation frequency is less susceptible to the fluctuation of the low frequency, and it is possible to increase the number of integrations by increasing the number of image capturing.
- the modulation frequency of CMS imaging being variable in a predetermined frequency range, for example, 15 Hz to 1 MHz, more preferably 200 Hz to 1 MHz. It is preferable.
- the modulation frequency being variable in moving image display as a display. if the device response speed is slower than 5 ms, human vision will feel blurry. For this reason, a defective element having a response speed slower than 5 ms is detected with the modulation frequency being variable.
- the TFT array 1 composed of the organic TFT elements 10 having a response speed of 1 ms (that is, the upper limit of the response frequency is 1 kHz)
- 10 ms that is, the upper limit of the response frequency is 100 Hz.
- the modulation frequency is 100 Hz or less
- the modulation frequency is 100 Hz or less
- the frequency exceeds 100 Hz the TFT element 10 having a response speed of 10 ms does not appear in the difference image. If the frequency is further increased to exceed 1 kHz, all TFT elements will not appear in the difference image.
- the variation in the response speed of the TFT element 10 can be obtained from the frequency that does not appear in the difference image.
- the voltage on / off timing and the imaging timing may be variable.
- the measurement is performed by arbitrarily delaying the start of imaging in the range of 1 ms to 100 ms, more preferably 1 ⁇ s to 100 ms, with respect to the on / off of the voltage described above.
- TFT elements 10 having a response speed of 10 ms are mixed in a TFT array 1 composed of organic TFT elements 10 having a response speed of 1 ms.
- the difference image (S2-S1) is a negative image.
- the timing delay is 1 ms or less, the contrast of the CMS image of all TFT elements is inverted.
- the variation in the response speed of the TFT element 10 can be obtained from the delay in the timing at which the contrast of the difference image is inverted.
- the camera 20 in order to perform photographing at a high modulation frequency of 15 Hz to 1 MHz, more preferably 200 Hz to 1 MHz, the camera 20 has a high frame rate, specifically, 30 fps to 2,000 fps, and more preferably. Is preferably a CCD or CMOS camera of 400 fps to 2,000,000 fps.
- the camera 20 preferably has a noise level as low as possible, a wide dynamic range, a wide wavelength range with sensitivity, and a digital output of 16 bits or more.
- PCO edge made by PCO, C11440-22CU made by Hamamatsu Photonics, and BU-50LN made by Bitlan can be used.
- the change rate of the light transmittance / reflectance of the organic semiconductor thin film 10a due to carrier accumulation varies depending on the wavelength region.
- the light transmittance change rate ( ⁇ T / T) of P3HT depends on the wavelength region. Sign and absolute value are changed greatly. For this reason, for example, when a monochromatic light of 1500 nm is irradiated to this, a change cannot be detected, and when a white light having a light intensity in a wavelength range of 300 to 1000 nm is irradiated, the change is canceled by a positive and negative change. End up.
- the light source 15 is obtained by spectrally dividing white light from a halogen lamp or a xenon lamp with a band-pass filter, a color glass filter, a spectroscope, or the like.
- a laser having a specific wavelength is used as the light source 15, and only light in a wavelength region having a large absolute value of ⁇ T / T is irradiated, for example, light in a wavelength region of 630 to 1500 nm is measured.
- the signal line S and the gate line G in a range where a defect is suspected are short-circuited, and a voltage is periodically applied using the function generator 30 therebetween.
- FIG. 7B when the location S1 of the signal line S is broken, a difference image of all TFT elements 10 except for the TFT element 10-1 appears.
- FIG. 7C when the location S2 of the signal line S is broken, all TFT elements 10 except the column of TFT elements 10-1 to 4 appear in the difference image.
- the TFT element 10-1 has no organic semiconductor thin film 10a (see FIG. 8), or the signal line S and / or the gate line G even if the organic semiconductor thin film 10a is present. All the TFT elements 10 except the TFT element 10-1 appear in the difference image when they are not in electrical contact with each other.
- an organic semiconductor thin film 10a, a source / drain electrode 12a, a gate electrode 12b, and a gate insulating film 13 are provided on a substrate 11.
- BGBC bottom gate bottom contact
- BGTC bottom gate top contact
- TGBC top gate bottom contact
- TGTC top gate top contact
- BG-T & BC bottom gate -There are top and bottom contacts and (f) electrostatic induction type.
- the substrate 11, the gate electrode 12b, and the gate insulating film 13 are translucent to the irradiation light (preferably , Transparent). Therefore, the gate electrode 12b may be a transparent conductive film such as indium tin oxide (ITO), poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT: PSS), or an extremely thin film. It must be a translucent metal film.
- ITO indium tin oxide
- PEDOT poly (styrenesulfonate)
- the gate insulating film 13 must be a transparent insulating film such as poly (methyl methacrylate) (PMMA), CYTOP (manufactured by Asahi Glass Co., Ltd.), TEFLON-AF (manufactured by DuPont), or parylene.
- the substrate 11 must be a transparent substrate such as glass, quartz glass, polypropylene (PP), polyethylene (PE), polyethylene terephthalate (PET), polycarbonate (PC), polyimide (PI).
- the source electrode / drain electrode 12a must be a transparent conductive film such as ITO or PEDOT: PSS or an extremely thin and translucent metal thin film.
- a CMS imaging apparatus 40 as an inspection apparatus includes a halogen light source 15, an optical fiber 16, a color glass filter 17, an optical lens system 18, a CCD camera (monochrome) 20, and a CCD camera. It comprises a buffer memory 21 for temporarily storing captured images, a control PC 22 and a function generator 30. By switching the optical system, it is possible to shoot both reflection images and transmission images.
- the CCD camera 20 has sensitivity in a wavelength range of 300 to 1100 nm, a frame rate of 30 fps, and a digital output of 16 bits.
- the buffer memory 21 can store images at the same speed as the shooting speed of the camera 20 and has a capacity of 4 GB.
- the organic thin film transistor 10 used here is a BGBC type, and was prepared as follows with reference to FIG. That is, after depositing 0.3 nm of chromium as an adhesion layer on a 10 mm square quartz glass substrate 11, gold and aluminum are evaporated to 6 nm and 1 nm, respectively, to form a translucent gate electrode 12 b. On top of this, CYTOP (manufactured by Asahi Glass Co., Ltd.) having a thickness of 400 nm was applied as a gate insulating film 13 by spin coating, and the solvent was volatilized by heating at 120 degrees for 30 minutes.
- CYTOP manufactured by Asahi Glass Co., Ltd.
- chromium was deposited as an adhesion layer, and then 30 nm of gold was deposited to form the source / drain electrodes 12a.
- 15 ⁇ l of a polymer semiconductor P3HT dissolved in trichlorobenzene (concentration: 0.1 wt%) was dropped, and a polydimethylsiloxane (PDMS) sheet was applied over it to make the solution uniform.
- the organic semiconductor thin film 10a made of uniform P3HT was formed by wetting and spreading, and after the PDMS sheet absorbed trichlorobenzene, the PDMS sheet was peeled off. Finally, it was heated at 100 degrees for 30 minutes. By this procedure, two types of TFT array 1 composed of a single element organic TFT element 10 and 5 ⁇ 5 TFT elements 10 were produced.
- CMS imaging measurement was performed by the following procedure. That is, as shown in FIG. 9, the TFT array 1 or the organic TFT element 10 (for convenience, simply referred to as “organic TFT element 10”) is arranged in front of the optical lens system 18 unless otherwise noted. The optical lens system 18 was adjusted to focus on the organic semiconductor thin film 10 a of the organic TFT element 10, and the light from the halogen light source 15 was irradiated from the back surface of the organic TFT element 10. At this time, as shown in FIG.
- the source and the drain are short-circuited, and a function generator 30 is used between the electrode 12a and the gate electrode 12b to obtain 15 Hz.
- the voltage of -30V and 0V is applied with the repetition period of.
- a carrier depletion state were repeatedly generated.
- the electrode 12a in which the sources and drains of all TFT elements 10 are short-circuited and the gates of all TFT elements 10 are short-circuited A voltage of ⁇ 30 V and 0 V was applied between the electrode 12 b and the electrode 12 b using a function generator 30 at a repetition period of 15 Hz.
- a trigger having a repetition period (30 Hz) that is twice the gate voltage is input to the CCD camera 20 from the faction generator 30, and images were taken with the gate voltages being -30V and 0V, respectively.
- the exposure time was 1 ms.
- the image taken at each cycle was stored in the buffer memory 21. After the measurement was completed, the image in the buffer memory 21 was transferred to the PC 22.
- a difference (CMS) image was obtained by taking the difference between the images of the gate voltage taken at each cycle of ⁇ 30V and 0V on the PC 22 and integrating and averaging the differences over the entire cycle.
- FIG. 12A shows an optical microscope image of the TFT element 10
- FIG. 12B shows a difference image obtained by integrating images for 10 minutes. Only on the gate electrode 12b, a change in transmittance due to accumulated carriers is observed. This is because carriers are accumulated only in the organic semiconductor thin film 10a above the gate electrode 12b.
- FIG. 12C shows a difference image when the output voltage from the function generator 30 is reduced (difference between the images when the gate voltage is ⁇ 0.01 V and 0 V). Since the contrast is lost, it can be confirmed in FIG. 12B that the accumulated carriers can be detected.
- the RMS noise of the difference image decreases as the number of integrations increases, and decreases to 2 ⁇ 10 ⁇ 4 over 10 minutes or more. This means that a change rate of light transmittance ⁇ T / T on the order of 10 ⁇ 4 can be detected by integration for about 10 minutes.
- the measurement was performed at a repetition period of 15 Hz. However, if measurement is performed at an earlier repetition period, a clear difference image can be obtained in a shorter time.
- FIG. 14A shows an optical microscope image of the 5 ⁇ 5 TFT array 1
- FIG. 14B shows a difference image obtained by image integration for 10 minutes. No difference image appears in the two TFT elements 10 of P1 and P2. This means that the two TFT elements 10 are defective. Actually, from the optical microscope image of FIG. 14A, the gate lines of the two TFT elements 10 were disconnected.
- the imaging device 40 it is possible to quickly detect a disconnection defect not only for the TFT elements 10 but also for the TFT elements 10 included in the TFT array 1.
- the accumulated carrier density is low, for example, on the order of 10 11 cm ⁇ 2 , it is possible to detect a defective TFT element 10 at high speed and high sensitivity for the TFT array 1. Further, it is possible to image variations in output characteristics and response speeds of the TFT elements 10 constituting the TFT array 1.
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Abstract
Description
これは、高変調周波数の方が低周波数の揺らぎの影響を受けにくく、画像の撮影回数を増やして積算回数を上げることが可能となるからである。
図9に示すように、検査装置としてのCMSイメージング装置40は、ハロゲン光源15と、光ファイバ16と、色ガラスフィルタ17と、光学レンズ系18と、CCDカメラ(モノクロ)20と、CCDカメラの撮影画像を一時保存するバッファメモリ21と、制御用PC22と、ファンクションジェネレータ30とから構成される。光学系の切り替えにより、反射イメージと透過イメージの両方の撮影が可能である。
次の手順でCMSイメージング測定を行った。すなわち、図9に示すように、TFTアレイ1、又は、有機TFT素子10(断りのない限り、便宜的に、単に「有機TFT素子10」と称する。)を光学レンズ系18の手前に配置し、光学レンズ系18を調節して有機TFT素子10の有機半導体薄膜10aにピントを合わせ、有機TFT素子10の背面からハロゲン光源15からの光を照射した。このとき、図6に示したように、P3HTは620nmを境に-ΔT/Tの符合が逆転するため、色ガラスフィルタ17を用いて630nm以上の近赤外光のみを照射し、-ΔT/Tを相殺させないようにした。
10 有機TFT素子
10a 有機半導体薄膜
12a ソース・ドレイン電極
12b ゲート電極
13 ゲート絶縁膜
15 光源
16 光ファイバ
17 色ガラスフィルタ
18 光学レンズ系
20 カメラ
21 バッファメモリ
22 コンピュータ
30 ファンクションジェネレータ
Claims (10)
- 有機半導体薄膜トランジスタ(TFT)アレイを光学的に撮像して検査する方法であって、各有機TFTにおいてソースとドレインを短絡させこれとゲートとの間に所定周期で電圧をオン・オフさせるとともに、単色光を照射しながら前記所定周期に同期させて電圧の印加前後の撮像を行ってこの差イメージを得ることを特徴とする有機TFTアレイの検査方法。
- 前記差イメージの複数を積算処理するステップを含むことを特徴とする請求項1記載の有機TFTアレイの検査方法。
- 前記有機TFTに対応する部分毎の前記差イメージのコントラスト差から各有機TFTの個体差を検査するステップを含むことを特徴とする請求項2記載の有機TFTアレイの検査方法。
- 前記所定周期を変化させて前記差イメージを得て、各有機TFTの応答速度差を検査するステップを含むことを特徴とする請求項3記載の有機TFTアレイの検査方法。
- 前記撮像は前記電圧のオン及びオフのそれぞれと所定時間だけ経過後に開始させるとともに、前記所定時間を変化させて前記差イメージを得て、各有機TFTの応答速度差を検査するステップを含むことを特徴とする請求項3記載の有機TFTアレイの検査方法。
- 有機半導体薄膜トランジスタ(TFT)アレイを光学的に撮像して検査する検査装置であって、
各有機TFTにおいてソースとドレインを短絡させこれとゲートとの間に所定周期で電圧をオン・オフさせるファンクションジェネレータと、
単色光を照射する光源と、
前記所定周期に同期させて電圧の印加前後の撮像を行う撮像装置と、
前記電圧の印加前後の差イメージを得る画像解析装置と、を含むことを特徴とする有機TFTアレイの検査装置。 - 前記画像解析装置は、前記差イメージの複数を積算処理する積算処理手段を含むことを特徴とする請求項6記載の有機TFTアレイの検査装置。
- 前記画像解析装置は、前記有機TFTに対応する部分毎の前記差イメージのコントラスト差から各有機TFTの個体差を検査する個体差検査手段を含むことを特徴とする請求項7記載の有機TFTアレイの検査装置。
- 前記ファンクションジェネレータにより前記所定周期を変化させて前記差イメージを与える制御手段をさらに含み、前記画像解析装置は、各有機TFTの応答速度差を検査する応答速度差検査手段を含むことを特徴とする請求項8記載の有機TFTアレイの検査装置。
- 前記電圧のオン及びオフのそれぞれと所定時間だけ経過後に前記撮像を開始させて前記差イメージを与える制御手段をさらに含み、前記画像解析装置は、各有機TFTの応答速度差を検査する応答速度差検査手段を含むことを特徴とする請求項8記載の有機TFTアレイの検査装置。
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