WO2016014345A3 - Two-terminal electronic devices and their methods of fabrication - Google Patents

Two-terminal electronic devices and their methods of fabrication Download PDF

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Publication number
WO2016014345A3
WO2016014345A3 PCT/US2015/040815 US2015040815W WO2016014345A3 WO 2016014345 A3 WO2016014345 A3 WO 2016014345A3 US 2015040815 W US2015040815 W US 2015040815W WO 2016014345 A3 WO2016014345 A3 WO 2016014345A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
electrode
residing
electronic devices
terminal electronic
Prior art date
Application number
PCT/US2015/040815
Other languages
French (fr)
Other versions
WO2016014345A2 (en
Inventor
Gang Yu
Chan-Tong SHIEH
Zhao Chen
Original Assignee
Cbrite Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/339,210 external-priority patent/US9741901B2/en
Application filed by Cbrite Inc. filed Critical Cbrite Inc.
Publication of WO2016014345A2 publication Critical patent/WO2016014345A2/en
Publication of WO2016014345A3 publication Critical patent/WO2016014345A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/29—Diodes comprising organic-inorganic heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/36—Devices specially adapted for detecting X-ray radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Electroluminescent Light Sources (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Two-terminal electronic devices, such as photodetectors, photovoltaic devices and electroluminescent devices, are provided. The devices include a first electrode residing on a substrate, wherein the first electrode comprises a layer of metal; an I-layer comprising an inorganic insulating or broad band semiconducting material residing on top of the first electrode, and aligned with the first electrode, wherein the inorganic insulating or broad band semiconducting material is a compound of the metal of the first electrode; a semiconductor layer, preferably comprising a p-type semiconductor, residing over the I-layer; and a second electrode residing over the semiconductor layer, the electrode comprising a layer of a conductive material. The band gap of the material of the semiconductor layer, is preferably smaller than the band gap of the I-layer material. The band gap of the material of the I-layer is preferably greater than 2.5 eV.
PCT/US2015/040815 2014-07-23 2015-07-16 Two-terminal electronic devices and their methods of fabrication WO2016014345A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/339,210 US9741901B2 (en) 2006-11-07 2014-07-23 Two-terminal electronic devices and their methods of fabrication
US14/339,210 2014-07-23

Publications (2)

Publication Number Publication Date
WO2016014345A2 WO2016014345A2 (en) 2016-01-28
WO2016014345A3 true WO2016014345A3 (en) 2016-03-17

Family

ID=53762382

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2015/040815 WO2016014345A2 (en) 2014-07-23 2015-07-16 Two-terminal electronic devices and their methods of fabrication

Country Status (1)

Country Link
WO (1) WO2016014345A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9741901B2 (en) 2006-11-07 2017-08-22 Cbrite Inc. Two-terminal electronic devices and their methods of fabrication
TWI782937B (en) 2017-04-10 2022-11-11 日商松下知識產權經營股份有限公司 camera device
FR3065583B1 (en) * 2017-04-20 2019-06-28 Isorg DEVICE FOR DETECTING RADIATION COMPRISING ORGANIC PHOTODIODS
US20200161483A1 (en) * 2017-06-23 2020-05-21 King Abdullah University Of Science And Technology Hole blocking layers for electronic devices and method of producing an electronic device having a hole-blocking layer
CN111490176B (en) * 2019-01-28 2022-08-02 武汉华星光电半导体显示技术有限公司 Display panel, preparation method thereof and electronic device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080169464A1 (en) * 2006-11-07 2008-07-17 Diode Solutions, Inc. Metal-insulator- metal (MIM) devices and their methods of fabrication
WO2012071107A1 (en) * 2010-11-23 2012-05-31 Qd Vision, Inc. Device including semiconductor nanocrystals & method
WO2012138410A1 (en) * 2011-04-02 2012-10-11 Qd Vision, Inc. Device including quantum dots

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080169464A1 (en) * 2006-11-07 2008-07-17 Diode Solutions, Inc. Metal-insulator- metal (MIM) devices and their methods of fabrication
WO2012071107A1 (en) * 2010-11-23 2012-05-31 Qd Vision, Inc. Device including semiconductor nanocrystals & method
WO2012138410A1 (en) * 2011-04-02 2012-10-11 Qd Vision, Inc. Device including quantum dots

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GEFFROY B; LE ROY P; PRAT C: "Organic light-emitting diode (OLED) technology: materials, devices anddisplay technologies", POLYMER INTERNATIONAL, vol. 55, no. 6, June 2006 (2006-06-01), pages 572 - 582, XP009186770, ISSN: 0959-8103, DOI: 10.1002/pi.1974 *

Also Published As

Publication number Publication date
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