WO2016002800A1 - Élément électroluminescent - Google Patents

Élément électroluminescent Download PDF

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Publication number
WO2016002800A1
WO2016002800A1 PCT/JP2015/068880 JP2015068880W WO2016002800A1 WO 2016002800 A1 WO2016002800 A1 WO 2016002800A1 JP 2015068880 W JP2015068880 W JP 2015068880W WO 2016002800 A1 WO2016002800 A1 WO 2016002800A1
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WIPO (PCT)
Prior art keywords
layer
type semiconductor
side electrode
light
semiconductor substrate
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PCT/JP2015/068880
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English (en)
Japanese (ja)
Inventor
理紀也 鈴木
倉又　朗人
飯塚　和幸
結樹 小石川
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株式会社タムラ製作所
株式会社光波
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Publication of WO2016002800A1 publication Critical patent/WO2016002800A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor

Definitions

  • the present invention relates to a light emitting element.
  • Ga 2 O 3 LED elements formed on a substrate is known (e.g., see Patent Document 1).
  • a Ti / Au electrode having a laminated structure in which a Ti film and an Au film are laminated is used as an n-side electrode connected to a Ga 2 O 3 substrate. Since Ti makes ohmic contact with Ga 2 O 3 with low resistance, the contact resistance between the Ti / Au electrode and the Ga 2 O 3 substrate can be lowered.
  • the Ti / Au electrode absorbs light that travels in the Ga 2 O 3 substrate and travels toward the Ti / Au electrode. This is a cause of lowering the light extraction efficiency.
  • one embodiment of the present invention provides the following light-emitting elements [1] to [8].
  • a light-emitting element having a stacked structure including the light-emitting element.
  • a pad electrode having a laminated structure including a barrier metal and a pad layer mainly composed of Au is formed on the n-side electrode, and the barrier metal is interposed between the n-side electrode and the pad layer.
  • a light-emitting element having an n-side electrode with high light reflectance can be provided.
  • FIG. 1A is a vertical cross-sectional view of the light emitting device according to the first embodiment.
  • FIG. 1B is an enlarged cross-sectional view of an n-type electrode and a pad electrode of the light emitting element.
  • FIG. 2 is a graph showing the relationship between the thickness of the Ti layer of the n-side electrode and the contact resistance between the n-side electrode and the n-type semiconductor substrate.
  • FIG. 3 is a graph showing the relationship between the thickness of the Ti layer of the n-side electrode and the reflectance of light incident from the Ti layer side of the n-side electrode.
  • FIG. 4 is a vertical cross-sectional view of the light emitting device according to the second embodiment.
  • FIG. 5 is a vertical sectional view of the light emitting device according to the third embodiment.
  • FIG. 1A is a vertical cross-sectional view of the light-emitting element 1 according to the first embodiment.
  • the light-emitting element 1 includes an n-type semiconductor substrate 10, an n-type semiconductor layer 12 formed on one surface of the n-type semiconductor substrate 10 via a dielectric layer 11, and an n-type semiconductor substrate 10 of the n-type semiconductor layer 12.
  • a p-type semiconductor layer 14 formed on the opposite side of the n-type semiconductor layer, a light-emitting layer 13 sandwiched between the n-type semiconductor layer 12 and the p-type semiconductor layer 14, and a surface of the n-type semiconductor substrate 10 opposite to the n-type semiconductor layer 12 Connected to the n-side electrode 15 connected above, the pad electrode 16 on the surface of the n-side electrode 15 opposite to the n-type semiconductor substrate 10, and the surface of the p-type semiconductor layer 14 opposite to the light emitting layer 13. And the pad electrode 18 on the surface of the p-side electrode 17 opposite to the p-type semiconductor layer 14.
  • the dielectric layer 11, n-type semiconductor layer 12, the side surface of the formed laminate a light emitting layer 13, p-type semiconductor layer 14 is covered with an insulating film 19 made of an insulating material such as SiO 2.
  • FIG. 1B is an enlarged cross-sectional view of the n-type electrode 15 and the pad electrode 16 of the light-emitting element 1.
  • the n-side electrode 15 includes a Ti layer 15a that is in contact with the n-type semiconductor substrate 10 so that the n-side electrode 15 is in ohmic contact with the n-type semiconductor substrate 10, and an Ag layer that reflects light transmitted through the Ti layer 15a. 15b.
  • the arrow in FIG. 1B schematically represents a path of light emitted from the light emitting layer 13 and reflected by the n-side electrode 15.
  • the Ti layer 15a is made of Ti.
  • the Ag layer 15b is made of a material containing Ag as a main component, that is, Ag or an Ag alloy.
  • the Ag concentration of the Ag layer 15b is preferably 95% or more in order to increase the reflectance.
  • the thickness of the Ti layer 15a is preferably 4.5 nm or less in order to suppress the light emitted from the light emitting layer 13 from being absorbed by the Ti layer 15a and suppress the decrease in the reflectivity of the n-side electrode 15. The following is more preferable. Further, in order to bring the n-side electrode 15 into contact with the n-type semiconductor substrate 10 with low resistance, the thickness is preferably 0.5 nm or more.
  • the thickness of the Ag layer 15b may be a thickness that can reflect the light emitted from the light emitting layer 13 without transmitting, for example, 270 nm.
  • the pad electrode 16 has a laminated structure including an adhesion layer 16a, a barrier metal 16b, and a pad layer 16c.
  • the pad layer 16c is a low resistance layer to which an external electrode is connected by wire bonding or the like, and is made of Au.
  • the barrier metal 16b prevents diffusion of Ag contained in the Ag layer 15b from the Ag layer 15b to the pad layer 16c, and prevents reaction between Ag contained in the Ag layer 15b and Au contained in the pad electrode 16.
  • the adhesion layer 16 a is a layer for closely attaching the pad electrode 16 to the n-side electrode 15.
  • the adhesion layer 16a is made of, for example, a Ni film having a thickness of 10 nm.
  • the barrier metal 16b has, for example, a stacked structure including a Ti film having a thickness of 50 nm and a Pt film having a thickness of 20 nm.
  • the pad layer 16c is made of, for example, an Au film having a thickness of 4000 nm.
  • the p-side electrode 17 is an electrode that is in ohmic contact with the p-type semiconductor layer 14.
  • an Ag alloy film with a thickness of 270 nm, an Ag concentration of 99%, a Ni film with a thickness of 10 nm, and an Au film with a thickness of 10 nm It has the laminated structure which laminated
  • the pad electrode 18 has, for example, a laminated structure in which a Ti film having a thickness of 100 nm, a Pt film having a thickness of 50 nm, and an Au film having a thickness of 500 nm are laminated.
  • the concentration of the n-type dopant in the n-type semiconductor substrate 10 is preferably 1 ⁇ 10 19 / cm 3 or less, and more preferably 5 ⁇ 10 18 / cm 3 or less in order to suppress light absorption. Moreover, in order to ensure electroconductivity, it is preferable that it is 5 * 10 ⁇ 17 > / cm ⁇ 3 > or more.
  • the n-type semiconductor substrate 10 preferably has irregularities on the surface on which the n-side electrode 15 is formed. By forming the irregularities, the light extraction efficiency of the light emitting element 1 is improved.
  • the n-type semiconductor layer 12 has a single-layer structure composed of an n-type clad layer or a multilayer structure including an n-type clad layer, for example, a single-layer structure composed of an n-type clad layer having a thickness of 5 ⁇ m.
  • the light emitting layer 13 includes, for example, five undoped (In x Ga 1-x ) N (0 ⁇ x ⁇ 1) crystal films having a thickness of 2 nm and five undoped layers (In y Ga 1-y ) having a thickness of 6 nm.
  • N (0 ⁇ y ⁇ 1, y ⁇ x) has a multiple quantum well structure in which crystal layers are alternately stacked one by one.
  • the emission wavelength of the light emitting layer 13 is, for example, 450 nm.
  • the p-type semiconductor layer 14 has a single-layer structure composed of a p-type cladding layer or a multilayer structure including the p-type cladding layer.
  • a p-type cladding layer having a thickness of 50 nm in contact with the light-emitting layer 13 It has a multilayer structure consisting of a p-type contact layer having a thickness of 10 nm in contact with the side electrode 17.
  • the dielectric layer 11 is a dielectric layer having a refractive index difference of 0.15 or less with respect to the n-type semiconductor substrate 10, such as a SiN layer containing SiN as a main component or a HfO 2 layer containing HfO 2 as a main component. is there.
  • the refractive index of the n-type semiconductor substrate 10 is 1.9
  • the refractive index of the dielectric layer 11 is 1.75 or more and 2.05 or less.
  • the dielectric layer 11 is formed on the n-type semiconductor substrate 10 so as to partially cover the surface of the n-type semiconductor substrate 10.
  • the pattern shape of the dielectric layer 11 is not limited and is, for example, a mesa pattern, a recess pattern, or a line and space pattern.
  • the dielectric layer 11 When the refractive index of the dielectric layer 11 is closer to the refractive index of the n-type semiconductor substrate 10, the total reflection at the interface between the n-type semiconductor substrate 10 and the dielectric layer 11 is suppressed, and the emitted light is efficiently extracted. Can do.
  • the dielectric layer 11 is a SiN layer, elements other than Si and N such as O may be included.
  • the refractive index of the dielectric layer 11 is adjusted by controlling the formation conditions such as the film formation temperature of the dielectric layer 11, and the difference between the refractive index of the dielectric layer 11 and the refractive index of the n-type semiconductor substrate 10 is further increased. Can be small.
  • the case of forming the SiO 2 layer a difference in refractive index is large between the n-type semiconductor substrate 10 instead of the dielectric layer 11, the reflectivity of the interface between the SiO 2 layer and the n-type semiconductor substrate 10 is large, n The light transmittance between the type semiconductor substrate 10 and the n-type semiconductor layer 12 is lowered.
  • the refractive index of the SiO 2 layer is about 1.4 to 1.55, and the difference from the refractive index of the n-type semiconductor substrate 10 is 0.35 or more.
  • the dielectric layer 11 does not completely cover the surface of the n-type semiconductor substrate 10.
  • the n-type semiconductor layer 12 contacts the dielectric layer 11 and a portion of the surface of the n-type semiconductor substrate 10 that is not covered by the dielectric layer 11.
  • the nitride semiconductor crystal constituting the n-type semiconductor layer 12 grows from a region not covered by the dielectric layer 11 on the upper surface of the n-type semiconductor substrate 10 and does not grow from the dielectric layer 11.
  • the nitride semiconductor crystal grows selectively and further grows in the lateral direction, thereby covering the dielectric layer 11.
  • the dislocation density in the n-type semiconductor layer 12 is reduced, and the crystal quality is improved.
  • Such a crystal growth method using selective lateral growth is called ELO (EpitaxialpitLateral Overgrowth) or the like.
  • the light emitting element 1 In the light emitting element 1, light is easily scattered between the n-type semiconductor layer 12 and the dielectric layer 11 because the dielectric layer 11 is patterned, thereby suppressing multiple total reflection in the n-type semiconductor layer and the like. Thus, loss can be suppressed. Further, between the dielectric layer 11 and the n-type semiconductor substrate 10, light is easily transmitted because the difference in refractive index between the dielectric layer 11 and the n-type semiconductor substrate 10 is small. For this reason, the light extraction efficiency between the n-type semiconductor layer 12 and the n-type semiconductor substrate 10 in the light-emitting element 1 is high.
  • the light-emitting element 1 is, for example, an LED (Light Emitting Diode) that extracts light from the n-type semiconductor substrate 10 side, and is mounted on a can-type stem using AuSn eutectic bonding or the like.
  • LED Light Emitting Diode
  • the light emitting element 1 may be a laser diode.
  • the refractive index difference between the light emitting layer 13 and the n-type semiconductor layer 12 and the light emitting layer 13 and the p-type semiconductor layer 14 is such that light is repeatedly reflected and amplified in the light emitting layer 13.
  • the light emitting layer 13 has a structure in which the side surface is a cleavage plane.
  • organic cleaning and SPM (Sulfuric acid / hydrogen peroxide mixture) cleaning are performed on the n-type semiconductor substrate 10 that has been subjected to CMP (Chemical Mechanical Polishing).
  • the dielectric layer 11 is formed on the n-type semiconductor substrate 10. Specifically, a SiN film having a thickness of about 1 ⁇ m formed on the n-type semiconductor substrate 10 at a growth temperature of 300 to 350 ° C. by plasma CVD (Chemical Vapor Deposition) method or the like is processed by photolithography and dry etching. Thus, the dielectric layer 11 is formed.
  • plasma CVD Chemical Vapor Deposition
  • the n-type semiconductor layer 12, the light emitting layer 13, and the p-type semiconductor layer 14 are epitaxially grown sequentially on the n-type semiconductor substrate 10 by MOCVD or the like.
  • the n-type semiconductor layer 12 is formed at a growth temperature of 1000 to 1100 ° C., for example.
  • the light emitting layer 13 is formed at a growth temperature of 700 to 800 ° C., for example.
  • the p-type semiconductor layer 14 is formed at a growth temperature of 900 to 1050 ° C., for example.
  • the n-side electrode 15 and the p-side electrode 17 are formed. Specifically, the n-side electrode 15 and the p-side electrode 17 are each subjected to heat treatment under conditions of 500 ° C. and 5 minutes in a nitrogen atmosphere after forming each of the above laminated structures by photolithography and vapor deposition, for example. Is obtained. Before forming the n-side electrode 15, it is preferable to form irregularities on the surface of the n-type semiconductor substrate 10 where the n-side electrode 15 is formed by photolithography and dry etching. Thereafter, the pad electrode 16 is formed on the n-side electrode 15.
  • the side surface of the laminated body is removed.
  • An insulating film 19 is formed by sputtering or the like so as to cover it.
  • the insulating film 19 on the p-side electrode 17 is selectively removed by photolithography and etching.
  • the pad electrode 18 is formed on the p-side electrode 17.
  • the n-type semiconductor substrate 10 in a wafer state is divided by dicing to obtain a light emitting element 1 that is made into chips.
  • the planar shape of the light-emitting element 1 formed into a chip is, for example, a square having a length of 1 mm.
  • FIG. 2 is a graph showing the relationship between the thickness of the Ti layer 15 a of the n-side electrode 15 and the contact resistance between the n-side electrode 15 and the n-type semiconductor substrate 10.
  • a Ga 2 O 3 substrate was used as the n-type semiconductor substrate 10
  • an Ag alloy having an Ag concentration of 99% and a Pd concentration of 1% was used as the Ag layer 15 b of the n-side electrode 15.
  • the plot mark ⁇ in FIG. 2 is a measured value when the carrier concentration of the n-type semiconductor substrate 10 is 3.0 ⁇ 10 18 / cm 3 .
  • the plot mark ⁇ is a measured value when the carrier concentration of the n-type semiconductor substrate 10 is 7.0 ⁇ 10 18 / cm 3 .
  • the plot mark ⁇ is a measured value when the carrier concentration of the n-type semiconductor substrate 10 is 1.3 ⁇ 10 19 / cm 3 .
  • the three dotted lines in FIG. 2 represent the contact resistance between a conventional Ti / Au electrode having a laminated structure in which a 50 nm thick Ti film and a 500 nm thick Au film are laminated and the n-type semiconductor substrate 10.
  • These three dotted lines indicate the case where the carrier concentration of the n-type semiconductor substrate 10 is 3.0 ⁇ 10 18 / cm 3 , 7.0 ⁇ 10 18 / cm 3 , and 1.3 ⁇ 10 19 / cm 3 , respectively. Represents the measured value.
  • FIG. 2 shows that when the thickness of the Ti layer 15a is at least 0.5 nm or more, the contact resistance with the n-type semiconductor substrate 10 becomes sufficiently small (the contact resistance of the conventional Ti / Au electrode). Is small enough if not.)
  • the thickness of the Ti layer 15a is 0, that is, when the Ti layer 15a is not provided, the n-side electrode 15 and the n-type semiconductor substrate 10 are not in ohmic contact, and current does not flow easily.
  • the thickness of the Ti layer 15a is preferably 0.5 nm or more.
  • the Ti layer 15 a is preferably 0.5 nm or more.
  • FIG. 3 is a graph showing the relationship between the thickness of the Ti layer 15 a of the n-side electrode 15 and the reflectance of light incident from the Ti layer 15 a side of the n-side electrode 15.
  • the vertical axis in FIG. 3 represents the relative reflectance with reference to the reflectance (100%) of an Ag mirror with an Ag concentration of 100%.
  • an Ag alloy having an Ag concentration of 99% and a Pd concentration of 1% was used as the Ag layer 15b of the n-side electrode 15.
  • FIG. 3 is a measured value of the n-side electrode 15 that has not been annealed after film formation, and a plot mark ⁇ is a measured value of the n-side electrode 15 that has been annealed after film formation.
  • FIG. 3 shows that the reflectance of the n-side electrode 15 hardly changes before and after the annealing process.
  • the dotted line in FIG. 3 shows the relative reflectance (53.5%) of a conventional Ti / Au electrode having a laminated structure in which a Ti film with a thickness of 50 nm and an Au film with a thickness of 500 nm are laminated.
  • the reflectance is higher than that of the conventional Ti / Au electrode when the thickness of the Ti layer 15a of the n-side electrode 15 is about 4.5 nm or less.
  • relative reflectance becomes larger than 80% when it is about 2.0 nm or less.
  • Table 1 below shows the numerical values at each measurement point shown in FIG.
  • the thickness of the Ti layer 15a of the n-side electrode 15 is preferably 4.5 nm or less, and more preferably 2.0 nm or less.
  • the second embodiment is a mode of a light emitting element having a structure different from that of the light emitting element 1 of the first embodiment.
  • the description of the same points as those of the first embodiment, such as the constituent members of the light emitting element, will be omitted or simplified.
  • FIG. 4 is a vertical cross-sectional view of the light-emitting element 2 according to the second embodiment.
  • the light-emitting element 2 includes an n-type semiconductor substrate 10, an n-type semiconductor layer 12 formed on one surface of the n-type semiconductor substrate 10 via a dielectric layer 11, and an n-type semiconductor substrate 10 of the n-type semiconductor layer 12.
  • the p-type semiconductor layer 14 formed on the opposite side, the n-type semiconductor layer 12 and the light-emitting layer 13 sandwiched between the p-type semiconductor layers 14 and the n-type semiconductor layer 12 of the n-type semiconductor substrate 10 are formed.
  • N-side electrode 15 connected on the side surface, pad electrode 16 on the side of n-side electrode 15 opposite to n-type semiconductor substrate 10, and surface of p-type semiconductor layer 14 opposite to light-emitting layer 13
  • the upper p-side electrode 17 and the pad electrode 18 on the surface opposite to the p-type semiconductor layer 14 of the p-side electrode 17 are provided.
  • the dielectric layer 11, n-type semiconductor layer 12, the side surface of the formed laminate a light emitting layer 13, p-type semiconductor layer 14 is covered with an insulating film 19 made of an insulating material such as SiO 2.
  • the light-emitting element 2 is a horizontal light-emitting element, and is the first embodiment in that the n-side electrode 15 is connected to the surface of the n-type semiconductor substrate 10 on the side where the n-type semiconductor layer 12 is formed. It differs from the light emitting element 1 which concerns on.
  • the n-side electrode 15 of the light-emitting element 2 has the same stacked structure as the n-side electrode 15 of the light-emitting element 1 according to the first embodiment, the n-side electrode 15 is emitted from the light-emitting layer 13 and passes through the n-type semiconductor substrate 10. Light traveling toward the side electrode 15 can be efficiently reflected. For this reason, the light emitting element 2 has high light extraction efficiency similarly to the light emitting element 1 which concerns on 1st Embodiment.
  • the third embodiment is a mode of a light emitting element having a structure different from that of the light emitting element 1 of the first embodiment.
  • the description of the same points as those of the first embodiment, such as the constituent members of the light emitting element, will be omitted or simplified.
  • FIG. 5 is a vertical sectional view of the light-emitting element 3 according to the third embodiment.
  • the light-emitting element 3 includes an n-type semiconductor substrate 10, an n-type semiconductor layer 12 formed on one surface of the n-type semiconductor substrate 10 via a dielectric layer 11, and an n-type semiconductor substrate 10 of the n-type semiconductor layer 12.
  • the light-emitting layer 13 sandwiched between the n-type semiconductor layer 12 and the p-type semiconductor layer 14, and the surface of the p-type semiconductor layer 14 opposite to the light-emitting layer 13.
  • the dielectric layer 11, n-type semiconductor layer 12, the side surface of the formed laminate a light emitting layer 13, p-type semiconductor layer 14 is covered with an insulating film 19 made of an insulating material such as SiO 2.
  • This laminated body is not in direct contact with the n-side electrode 20 and the pad electrode 21 due to the insulating film 19.
  • the n-side electrode 20 includes a Ti layer 20a in contact with the n-type semiconductor substrate 10 for ohmic contact with the n-type semiconductor substrate 10, and an Ag layer for reflecting light transmitted through the Ti layer 20a. And a through electrode having a laminated structure including 20b. As shown in FIG. 5, the light emitting element 3 preferably has a plurality of n-side electrodes 20 for current dispersion.
  • the Ti layer 20a and the Ag layer 20b are made of the same material as the Ti layer 15a and the Ag layer 15b of the n-side electrode 15 according to the first embodiment, respectively.
  • the thickness of the Ti layer 20a is preferably 4.5 nm or less, and more preferably 2 nm or less, like the Ti layer 15a of the n-side electrode 15 according to the first embodiment.
  • it is preferably 0.5 nm or more.
  • the pad electrode 21 has a laminated structure including an adhesion layer 21a, a barrier metal 21b, and a pad layer 21c, similarly to the pad electrode 16 according to the first embodiment.
  • the adhesion layer 21a, the barrier metal 21b, and the pad layer 21c are made of the same material as the adhesion layer 16a, the barrier metal 16b, and the pad layer 16c according to the first embodiment, respectively, and have the same thickness.
  • the p-side electrode 22 is an electrode that is in ohmic contact with the p-type semiconductor layer 14.
  • an Ag alloy film with a thickness of 270 nm, an Ag concentration of 99%, a Ni film with a thickness of 10 nm, and an Au film with a thickness of 10 nm It has the laminated structure which laminated
  • the pad electrode 23 has a laminated structure in which, for example, a Ti film having a thickness of 100 nm, a Pt film having a thickness of 50 nm, and an Au film having a thickness of 500 nm are laminated.
  • the light emitting element 3 is a horizontal light emitting element and is different from the light emitting element 1 according to the first embodiment in that the n-side electrode 20 is mainly a through electrode.
  • the n-side electrode 20 of the light-emitting element 3 has the same stacked structure as the n-side electrode 15 of the light-emitting element 1 according to the first embodiment, the n-side electrode 20 is emitted from the light-emitting layer 13 and passes through the n-type semiconductor substrate 10. Light traveling toward the side electrode 20 can be efficiently reflected. For this reason, the light emitting element 3 has high light extraction efficiency similarly to the light emitting element 1 which concerns on 1st Embodiment.
  • the n-side electrode can efficiently reflect the light emitted from the light-emitting layer, the light extraction efficiency of the light-emitting element due to the light absorption of the n-side electrode. Can be suppressed.

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Abstract

La présente invention concerne un élément électroluminescent qui comporte une électrode côté n qui présente une réflectance élevée et est connectée à un substrat, dont le cristal hôte est un cristal (AlxGayInz)2O3 (avec 0 ≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ z ≤ 1, et x+y+z = 1). Dans un mode de réalisation, un élément électroluminescent (1) comprend les éléments suivants: un substrat semi-conducteur de type n (10), dont le cristal hôte est un cristal (AlxGayInz)2O3; et une électrode côté n (15) connectée audit substrat semi-conducteur de type n (10). L'électrode côté n (15) présente une structure multicouche qui contient une couche de titane (15a) en contact avec le substrat semi-conducteur de type n (10) et une couche d'argent (15b), constituée essentiellement d'argent, sur la partie supérieure de la couche de titane (15a).
PCT/JP2015/068880 2014-07-01 2015-06-30 Élément électroluminescent WO2016002800A1 (fr)

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JP2006032737A (ja) * 2004-07-16 2006-02-02 Koha Co Ltd 発光素子
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JP2009188422A (ja) * 2009-04-14 2009-08-20 Stanley Electric Co Ltd 半導体発光素子
JP2011129915A (ja) * 2009-12-18 2011-06-30 Lg Innotek Co Ltd 発光素子、発光素子パッケージ、及び照明システム
JP2012114343A (ja) * 2010-11-26 2012-06-14 Toyoda Gosei Co Ltd 半導体発光素子
JP2012124342A (ja) * 2010-12-08 2012-06-28 Nichia Chem Ind Ltd 窒化物系半導体発光素子
WO2013011674A1 (fr) * 2011-07-15 2013-01-24 パナソニック株式会社 Élément semi-conducteur électroluminescent
JP2013135234A (ja) * 2011-12-26 2013-07-08 Lg Innotek Co Ltd 発光素子

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Publication number Priority date Publication date Assignee Title
JP2005260101A (ja) * 2004-03-12 2005-09-22 Univ Waseda Ｇａ２Ｏ３系半導体素子
JP2006032737A (ja) * 2004-07-16 2006-02-02 Koha Co Ltd 発光素子
JP2009081468A (ja) * 2009-01-19 2009-04-16 Univ Waseda Ｇａ２Ｏ３系半導体素子及びＧａ２Ｏ３系半導体素子の製造方法
JP2009188422A (ja) * 2009-04-14 2009-08-20 Stanley Electric Co Ltd 半導体発光素子
JP2011129915A (ja) * 2009-12-18 2011-06-30 Lg Innotek Co Ltd 発光素子、発光素子パッケージ、及び照明システム
JP2012114343A (ja) * 2010-11-26 2012-06-14 Toyoda Gosei Co Ltd 半導体発光素子
JP2012124342A (ja) * 2010-12-08 2012-06-28 Nichia Chem Ind Ltd 窒化物系半導体発光素子
WO2013011674A1 (fr) * 2011-07-15 2013-01-24 パナソニック株式会社 Élément semi-conducteur électroluminescent
JP2013135234A (ja) * 2011-12-26 2013-07-08 Lg Innotek Co Ltd 発光素子

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