WO2015190333A1 - 載置台及びプラズマ処理装置 - Google Patents
載置台及びプラズマ処理装置 Download PDFInfo
- Publication number
- WO2015190333A1 WO2015190333A1 PCT/JP2015/065738 JP2015065738W WO2015190333A1 WO 2015190333 A1 WO2015190333 A1 WO 2015190333A1 JP 2015065738 W JP2015065738 W JP 2015065738W WO 2015190333 A1 WO2015190333 A1 WO 2015190333A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- region
- lead wire
- terminal
- mounting table
- heaters
- Prior art date
Links
- 238000009832 plasma treatment Methods 0.000 title description 2
- 230000002093 peripheral effect Effects 0.000 claims abstract description 30
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 47
- 239000000919 ceramic Substances 0.000 claims description 6
- 238000001179 sorption measurement Methods 0.000 claims description 5
- 239000002826 coolant Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 30
- 239000003507 refrigerant Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32908—Utilities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Definitions
- Embodiments of the present invention relate to a mounting table and a plasma processing apparatus.
- a plasma processing apparatus In the manufacture of an electronic device such as a semiconductor device, a plasma processing apparatus is used that generates plasma by exciting a processing gas and processes an object to be processed with the plasma.
- the plasma processing apparatus includes a mounting table for mounting an object to be processed thereon.
- the mounting table has an electrostatic chuck and a base.
- the electrostatic chuck includes a dielectric main body, a chuck electrode embedded in the main body, and a heater.
- the main body has a placement area on which the object to be processed is placed.
- the heater controls the temperature of the object to be processed. Therefore, the heater is provided in the placement area.
- the electrostatic chuck exposes a contact portion that is electrically connected to the heater from the lower surface of the placement region.
- This electrostatic chuck is provided on a base. A flow path through which the temperature adjusting medium is circulated is formed in the base.
- a through hole leading to the contact portion is formed in the base, and wiring connected to the contact region is passed through the through hole. This wiring is connected to the heater power supply.
- the plasma processing apparatus is required to have in-plane uniformity of processing of the object to be processed.
- in-plane uniformity it is necessary to reduce the temperature variation in the surface of the workpiece.
- a mounting table for mounting the object to be processed thereon.
- the mounting table includes a support member, a base, and a plurality of wires.
- the support member is a member for supporting the object to be processed, and includes a main body portion, one or more heaters, one or more first wiring layers, one or more second wiring layers, and a plurality of contact portions.
- the main body is made of ceramic, and has a placement area for placing the object to be processed thereon, and an outer peripheral area surrounding the placement area.
- One or more heaters are provided in the main body.
- the one or more first wiring layers extend in the main body and are electrically connected to the power supply sides of the one or more heaters, respectively.
- the one or more second wiring layers extend in the main body and are electrically connected to the reference potential side of the one or more heaters.
- the plurality of contact portions are exposed from the main body portion in the outer peripheral region, and are electrically connected to each of the one or more first wiring layers and the one or more second wiring layers.
- the base has a first region for supporting the mounting region thereon, and a second region for supporting the outer peripheral region thereon. In the second region, a plurality of first through holes that respectively communicate with the plurality of contact portions are provided.
- the plurality of wirings are respectively joined to the plurality of contact portions through the plurality of first through holes.
- the through-hole formed in the base can cause a singular point of temperature in the support member.
- the plurality of first through holes communicating with the plurality of contact portions are not in the first region in which the mounting region is supported, but in the second region surrounding the first region. Is provided. Therefore, generation
- the one or more heaters may be a plurality of heaters
- the one or more first wiring layers may be a plurality of first wiring layers respectively connected to power supply sides of the plurality of heaters.
- the number of first through holes increases as the number of heaters increases. According to this embodiment, since the first through hole is provided in the second region, even if the number of first through holes increases as the number of heaters increases, the temperature singularity in the mounting region of the support member Can be suppressed.
- At least one of the one or more second wiring layers may be connected to a reference potential side of two or more of the plurality of heaters.
- a wiring layer connected to the reference potential side of two or more heaters is shared. Therefore, it is possible to reduce the number of contact portions for reference potential, the number of wirings for reference potential, and the number of through holes through which the wiring for reference potential is passed.
- the base may be provided with a refrigerant flow path for supplying a refrigerant.
- the support member includes an electrostatic adsorption electrode, a third wiring layer electrically connected to the electrostatic adsorption electrode, and another contact portion electrically connected to the third wiring layer.
- the contact portion further has another contact portion exposed from the main body portion in the outer peripheral region, and the second region is provided with a second through hole leading to the another contact portion, You may further provide another wiring joined to another contact part through the 2nd through-hole.
- the support member functions as an electrostatic chuck.
- the base may have a conductive main part and an insulating part.
- the main part provides the first region and the second region.
- the insulating part is detachably attached to the main part and provides a plurality of first through holes.
- Each of the plurality of wires includes a flexible lead wire having one end and the other end, a first terminal coupled to one end of the lead wire and a corresponding contact portion among the plurality of contact portions, and a lead wire A space is interposed between the inner surface of the insulating portion that includes the second terminal coupled to the other end and defines the first through hole through which the first terminal and the lead wire are passed, and the first terminal and the lead wire. is doing. According to this embodiment, even if the base is thermally expanded, the stress caused by the thermal expansion is relieved by the lead wires. Therefore, the reliability of the coupling between the first terminal and the contact portion is improved.
- the base may further include a conductive main part, a first insulating part, and a second insulating part.
- the main part provides the first region and the second region.
- the first insulating portion is detachably attached to the main portion and provides a plurality of first through holes.
- the second insulating portion is detachably attached to the main portion and provides a second through hole.
- the first insulating part and the second insulating part may be an integrated insulating member.
- Each of the plurality of wirings includes a flexible first lead wire having one end and the other end, a first terminal coupled to one end of the first lead wire and coupled to a corresponding contact portion among the plurality of contact portions, and A second terminal coupled to the other end of the first lead wire, an inner surface of the first insulating portion defining the first through hole through which the first terminal and the first lead wire are passed, the first terminal, and the first terminal A space is interposed between the first lead wire.
- Another wiring includes a flexible second lead wire having one end and the other end, a third terminal coupled to one end of the second lead wire and another contact portion, and the other end of the second lead wire
- a space is interposed between the third terminal and the second lead wire, and the inner surface of the second insulating portion that includes the fourth terminal coupled to the first terminal and defines the second through hole.
- the mounting table may further include a cylindrical insulating portion interposed between the third terminal and the second insulating portion. According to this embodiment, higher dielectric strength can be obtained around the third terminal.
- a plasma processing apparatus in another aspect, includes a processing container, one of the above-described side surfaces, and a mounting table in any of various forms.
- the mounting table is provided in the processing container. According to this plasma processing apparatus, variation in temperature within the surface of the object to be processed can be suppressed.
- a mounting table and a plasma processing apparatus capable of reducing the temperature variation in the surface of the object to be processed.
- FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 2. It is sectional drawing which expands and shows a part of support member which concerns on one Embodiment.
- FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 2.
- FIG. 1 is a diagram schematically showing a plasma processing apparatus according to an embodiment.
- a plasma processing apparatus 10 shown in FIG. 1 is a capacitively coupled parallel plate plasma etching apparatus.
- the plasma processing apparatus 10 includes a substantially cylindrical processing container 12.
- the processing container 12 is made of, for example, aluminum, and the surface thereof is anodized.
- the mounting table 16 includes a support member 18 and a base 20.
- the base 20 has a substantially disk shape, and the main part thereof is made of a conductive metal such as aluminum.
- the base 20 constitutes a lower electrode.
- the base 20 is supported by the support portion 14.
- the support portion 14 is a cylindrical member extending from the bottom of the processing container 12.
- the first high frequency power supply HFS is electrically connected to the base 20 via a matching unit MU1.
- the first high-frequency power supply HFS is a power supply that generates high-frequency power for plasma generation, and generates high-frequency power of 27 to 100 MHz, in one example, 40 MHz.
- the matching unit MU1 has a circuit for matching the output impedance of the first high frequency power supply HFS with the input impedance on the load side (base 20 side).
- the base 20 is electrically connected to the second high frequency power supply LFS via the matching unit MU2.
- the second high frequency power supply LFS generates high frequency power (high frequency bias power) for drawing ions into the wafer W, and supplies the high frequency bias power to the base 20.
- the frequency of the high frequency bias power is a frequency in the range of 400 kHz to 13.56 MHz, and in one example, 3 MHz.
- the matching unit MU2 has a circuit for matching the output impedance of the second high-frequency power supply LFS and the input impedance on the load side (base 20 side).
- a support member 18 is provided on the base 20.
- the support member 18 is an electrostatic chuck. That is, in one embodiment, the support member 18 attracts the wafer W by electrostatic force such as Coulomb force and holds the wafer.
- the support member 18 has an electrode E1 for electrostatic attraction in a ceramic main body.
- a DC power source 22 is electrically connected to the electrode E1 via a switch SW1.
- a focus ring FR is provided on the upper surface of the base 20 and around the support member 18.
- the focus ring FR is provided in order to improve the uniformity of plasma processing.
- the focus ring FR is made of a material appropriately selected according to the plasma processing to be performed, and can be made of, for example, silicon or quartz.
- a coolant channel 24 is formed inside the base 20.
- Refrigerant is supplied to the refrigerant flow path 24 from a chiller unit provided outside the processing container 12 via a pipe 26a.
- the refrigerant supplied to the refrigerant flow path 24 returns to the chiller unit via the pipe 26b. Details of the mounting table 16 including the base 20 and the support member 18 will be described later.
- the upper electrode 30 is provided in the processing container 12.
- the upper electrode 30 is disposed above the mounting table 16 so as to face the base 20, and the base 20 and the upper electrode 30 are provided substantially parallel to each other.
- the upper electrode 30 is supported on the upper part of the processing container 12 through an insulating shielding member 32.
- the upper electrode 30 can include an electrode plate 34 and an electrode support 36.
- the electrode plate 34 faces the processing space S and provides a plurality of gas discharge holes 34a.
- the electrode plate 34 can be made of a low resistance conductor or semiconductor with little Joule heat.
- the electrode support 36 supports the electrode plate 34 in a detachable manner and can be made of a conductive material such as aluminum.
- the electrode support 36 may have a water cooling structure.
- a gas diffusion chamber 36 a is provided inside the electrode support 36.
- a plurality of gas flow holes 36b communicating with the gas discharge holes 34a extend downward from the gas diffusion chamber 36a.
- the electrode support 36 is formed with a gas introduction port 36c for introducing a processing gas to the gas diffusion chamber 36a, and a gas supply pipe 38 is connected to the gas introduction port 36c.
- a gas source group 40 is connected to the gas supply pipe 38 via a valve group 42 and a flow rate controller group 44.
- the valve group 42 has a plurality of on-off valves
- the flow rate controller group 44 has a plurality of flow rate controllers such as a mass flow controller.
- the gas source group 40 includes gas sources for a plurality of types of gases necessary for plasma processing.
- the plurality of gas sources of the gas source group 40 are connected to the gas supply pipe 38 via corresponding open / close valves and corresponding mass flow controllers.
- one or more gases from one or more gas sources selected from the plurality of gas sources in the gas source group 40 are supplied to the gas supply pipe 38.
- the gas supplied to the gas supply pipe 38 reaches the gas diffusion chamber 36a and is discharged into the processing space S through the gas flow hole 36b and the gas discharge hole 34a.
- the plasma processing apparatus 10 may further include a ground conductor 12a.
- the ground conductor 12 a is a substantially cylindrical ground conductor, and is provided so as to extend above the height position of the upper electrode 30 from the side wall of the processing container 12.
- a deposition shield 46 is detachably provided along the inner wall of the processing container 12.
- the deposition shield 46 is also provided on the outer periphery of the support portion 14.
- the deposition shield 46 prevents the etching byproduct (depot) from adhering to the processing container 12 and can be configured by coating an aluminum material with ceramics such as Y 2 O 3 .
- an exhaust plate 48 is provided between the support portion 14 and the inner wall of the processing container 12.
- the exhaust plate 48 can be configured by, for example, coating an aluminum material with ceramics such as Y 2 O 3 .
- the processing vessel 12 is provided with an exhaust port 12e.
- An exhaust device 50 is connected to the exhaust port 12e via an exhaust pipe 52.
- the exhaust device 50 includes a vacuum pump such as a turbo molecular pump, and can reduce the pressure in the processing container 12 to a desired degree of vacuum.
- a loading / unloading port 12 g for the wafer W is provided on the side wall of the processing container 12, and the loading / unloading port 12 g can be opened and closed by a gate valve 54.
- the plasma processing apparatus 10 may further include a control unit Cnt.
- the control unit Cnt is a computer including a processor, a storage unit, an input device, a display device, and the like, and controls each unit of the plasma processing apparatus 10.
- an operator can perform a command input operation and the like to manage the plasma processing apparatus 10 using the input device, and the operating status of the plasma processing apparatus 10 is visualized by the display device. Can be displayed.
- the storage unit of the control unit Cnt causes the respective components of the plasma processing apparatus 10 to execute processes according to a control program for controlling various processes executed by the plasma processing apparatus 10 by the processor and processing conditions.
- a program for processing, that is, a processing recipe is stored.
- FIG. 2 is a plan view showing the mounting table according to the embodiment.
- FIG. 3 is a plan view showing a base of the mounting table according to the embodiment.
- 4 is a cross-sectional view taken along line IV-IV in FIG.
- FIG. 5 is an enlarged cross-sectional view of a part of the support member according to the embodiment.
- FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
- the mounting table 16 includes the support member 18 and the base 20.
- the support member 18 has a main body 18m made of ceramic.
- the main body 18m has a substantially disk shape.
- the main body 18m provides a placement area 18a and an outer peripheral area 18b.
- the placement area 18a is a substantially circular area in plan view.
- a wafer W as a target object is mounted on the upper surface of the mounting area 18a.
- the upper surface of the placement region 18 a is constituted by the top surfaces of a plurality of convex portions.
- the diameter of the mounting region 18 a is substantially the same as that of the wafer W or slightly smaller than the diameter of the wafer W.
- the outer peripheral region 18b is a region surrounding the placement region 18a and extends in a substantially annular shape. In one embodiment, the upper surface of the outer peripheral region 18b is at a position lower than the upper surface of the placement region 18a.
- the support member 18 is an electrostatic chuck.
- the support member 18 of this embodiment has an electrode E1 for electrostatic attraction in the placement region 18a.
- the electrode E1 is connected to the DC power source 22 via the switch SW1.
- one or more heaters HT are provided in the placement region 18a and below the electrode E1.
- the placement region 18a is provided with a plurality of heaters HT.
- a plurality of heaters HT are provided in a central circular region of the placement region 18 a and in a plurality of concentric annular regions surrounding the circular region.
- a plurality of heaters HT are arranged in the circumferential direction.
- the heaters HT are supplied with individually adjusted power from the heater power supply HP shown in FIG. Thereby, the heat which each heater HT emits is controlled individually, and the temperature of a plurality of partial fields in placement field 18a is adjusted individually.
- each wiring layer EW1 (first wiring layer) that is electrically connected to the power feeding side of the heater HT is provided in the main body 18m of the support member 18.
- a plurality of heaters HT are provided in the main body 18m
- a plurality of wiring layers EW1 that are individually connected to the power feeding sides of the plurality of heaters HT are provided in the main body 18m.
- Each wiring layer EW1 extends from the power supply side of the corresponding heater HT to the outer peripheral region 18b.
- each wiring layer EW1 may include a line-shaped pattern extending horizontally in the main body portion 18m and a contact via extending in a direction intersecting the line-shaped pattern (for example, a vertical direction).
- each wiring layer EW1 is electrically connected to the corresponding contact portion CT1 (see FIGS. 2, 5, and 6) in the outer peripheral region 18b.
- each wiring layer EW1 forms a contact portion CT1 in the outer peripheral region 18b.
- the contact portion CT1 is exposed from the lower surface of the outer peripheral region 18b in the outer peripheral region 18b.
- a wiring layer EW2 (second wiring layer) that is electrically connected to the reference potential side of the heater HT is provided.
- a plurality of heaters HT are provided in the main body 18m
- a plurality of wiring layers EW2 that are individually connected to the reference potential side of the plurality of heaters HT are provided in the main body 18m.
- at least one of the plurality of wiring layers EW2 is commonly connected to the reference potential side of two or more heaters HT among the plurality of heaters HT.
- each of the plurality of wiring layers EW2 is commonly connected to the reference potential side of two or more corresponding heaters HT among the plurality of heaters HT. Accordingly, it is possible to reduce the number of reference potential contact portions CT2, the number of reference potential wirings WR2, and the number of through holes TH2 through which the reference potential wiring WR2 passes.
- Each wiring layer EW2 extends to the outer peripheral region 18b.
- the wiring layer EW2 may include a line-shaped pattern extending horizontally in the main body portion 18m, and a contact via extending in a direction intersecting the line-shaped pattern (for example, a vertical direction).
- each wiring layer EW2 is electrically connected to the corresponding contact portion CT2 (see FIGS. 2 and 6) in the outer peripheral region 18b.
- each wiring layer EW2 forms a contact portion CT2 in the outer peripheral region 18b. The contact portion CT2 is exposed from the lower surface of the outer peripheral region 18b in the outer peripheral region 18b.
- a wiring layer EW3 (third wiring layer) that is electrically connected to the electrode E1 for electrostatic attraction is provided in the main body portion 18m of the support member 18.
- the wiring layer EW3 extends from the electrode E1 to the outer peripheral region 18b.
- the wiring layer EW3 may include a line-shaped pattern that extends horizontally in the main body 18m and a contact via that extends in a direction intersecting the line-shaped pattern (for example, a vertical direction).
- the wiring layer EW3 is electrically connected to the corresponding contact portion CT3 (see FIGS. 2 and 6) in the outer peripheral region 18b.
- the wiring layer EW3 constitutes the contact portion CT3 in the outer peripheral region 18b.
- the contact portion CT3 is exposed from the lower surface of the outer peripheral region 18b in the outer peripheral region 18b.
- the support member 18 configured in this manner is provided on the base 20.
- the support member 18 is joined to the base 20 by an adhesive AH (see FIG. 6).
- the base 20 has a first region 20 a and a second region 20 b.
- the first region 20a is a substantially circular region in plan view
- the second region 20b is a region extending in an annular shape so as to surround the first region 20a.
- a placement area 18a is mounted on the first area 20a, and an outer peripheral area 18b is mounted on the second area 20b.
- the second region 20b is provided with one or more through holes TH1 and one or more through holes TH2 penetrating the second region 20b in the vertical direction.
- These through holes TH1 and TH2 are the first through holes of one embodiment.
- the through hole TH1 communicates with the contact portion CT1, and the through hole TH2 communicates with the contact portion CT2.
- a plurality of through holes TH1 and a plurality of through holes TH2 are provided.
- the numbers of the through holes TH1 and the through holes TH2 are set according to the numbers of the contact portions CT1 and the contact portions CT2.
- the second region 20b is provided with a through hole TH3 (second through hole) penetrating the second region 20b in the vertical direction.
- the through hole TH3 communicates with the contact portion CT3.
- the base 20 has a main portion 20m.
- the main portion 20m has a substantially disk shape and is made of a conductive metal such as aluminum.
- the main portion 20m provides the first region 20a and the second region 20b described above.
- the base 20 further has an insulating part 20i.
- the insulating part 20i is an insulating member, and is made of, for example, resin.
- the insulating part 20i is provided in a through-hole formed in the main part 20m of the base 20, and is fixed to the main part 20m by fastening means such as screws. That is, the insulating part 20 i can be detached from the main part 20 m of the base 20.
- the base 20 has a plurality of insulating portions 20i.
- One of the plurality of insulating portions 20i provides the through hole TH1 and the through hole TH3, and the other insulating portion 20i provides the through hole TH1. Further, some of the plurality of insulating portions 20i may provide the through hole TH2.
- the insulating part 20i shown in FIG. 6 provides a through hole TH1, a through hole TH2, and a through hole TH3.
- the wiring WR1 passes through the through hole TH1.
- the wiring WR1 is a wiring that connects the heater power supply HP and the contact portion CT1.
- the wiring WR2 passes through the through hole TH2.
- the wiring WR2 is a wiring that connects the heater power supply HP and the contact portion CT2.
- the wiring WR3 passes through the through hole TH3.
- the wiring WR3 is a wiring that connects the DC power supply 22 and the contact portion CT3.
- the wiring WR1, the wiring WR2, and the wiring WR3 have substantially the same structure. Therefore, hereinafter, the wiring WR1, the wiring WR2, and the wiring WR3 may be collectively referred to as the wiring WR.
- the wiring WR has a terminal ET1, a lead wire LW1, a terminal ET2, and a lead wire LW2.
- the terminal ET1 has a cylindrical shape closed at one end. One end of the terminal ET1 is joined to the corresponding contact portion. Further, one end of the lead wire LW1 is coupled to the terminal ET1.
- the lead wire LW1 has flexibility. That is, the lead wire LW1 has a property of being easily bent with respect to stress.
- the other end of the lead wire LW1 is coupled to the terminal ET2.
- the terminal ET2 is a substantially cylindrical member that is reduced in diameter or closed between one end and the other end. The other end of the lead wire LW1 is coupled to one end of the terminal ET2, and the lead wire LW2 is coupled to the other end of the terminal ET2.
- the terminal ET1 (first terminal), the lead wire LW1 (first lead wire), and the terminal ET2 (second terminal) of the wiring WR1 are provided in the through hole TH1, and the terminal ET1 (first terminal) of the wiring WR2 is provided.
- 1 terminal), the lead wire LW1 (first lead wire), and the terminal ET2 (second terminal) are provided in the through hole TH2, and the terminal ET1 (third terminal) and the lead wire LW1 (first terminal) of the wiring WR3. 2 lead wires) and the terminal ET2 (fourth terminal) are provided in the through hole TH3.
- a space is interposed between the terminal ET1 and the lead wire LW1 of each wiring WR and an inner surface (wall surface) that defines a through hole through which the terminal ET1 and the lead wire LW1 are passed.
- a space is interposed between the wall surface of the through hole defined by the insulating portion 20i, the terminal ET1 passed through the through hole, and the lead wire LW1. Therefore, even if the base 20 is thermally expanded and stress is applied to the terminal ET2, the stress is relieved by the deformation of the lead wire LW1, and transmission of the stress to the terminal ET1 is suppressed. As a result, the reliability of coupling between the terminal ET1 and the corresponding contact portion is enhanced.
- the insulating part 20i may have an upper part 20t and a lower part 20u.
- the upper part 20t and the lower part 20u are separable from each other and can be fixed to each other by fastening means for fixing the insulating part 20i to the main part 20m.
- a cylindrical insulating portion 60 surrounding the terminal ET1 is provided between the terminal ET1 of the wiring WR3 and the insulating portion 20i.
- the insulating part 60 is made of an insulating material.
- the wiring WR3 is a wiring for applying a voltage to the electrostatic adsorption electrode E1. Therefore, the dielectric strength is required for the wiring WR3.
- the dielectric strength around the terminal ET1 can be further increased.
- the contact portion of the support member 18 is provided in the outer peripheral region 18 b, and a through hole leading to the contact portion is provided in the second region 20 b of the base 20.
- the through-hole formed in the base 20 can cause the support member 18 to have a temperature singularity.
- a through-hole for passing the wiring WR is provided in the second region 20b, not in the first region 20a extending immediately below the mounting region 18a. Therefore, the occurrence of a singular point of temperature in the placement region 18a can be suppressed. Therefore, in the plasma processing having the mounting table 16, it is possible to reduce the temperature variation in the surface of the object to be processed such as the wafer W.
- the plasma processing apparatus 10 described above is a capacitively coupled plasma processing apparatus
- the mounting table 16 can be employed in any plasma processing apparatus.
- the plasma processing apparatus may be any type of plasma processing apparatus such as an inductively coupled plasma processing apparatus or a plasma processing apparatus that excites a gas by surface waves such as microwaves.
- one insulating portion 20i provides a plurality of through holes
- the base 20 has a plurality of insulating portions 20i that individually provide one or more through holes. May be.
- the base 20 may have a plurality of first insulating portions that individually provide the through holes TH1 and the through holes TH2, and a second insulating portion that provides the through holes TH3.
- the support member 18 is an electrostatic chuck.
- the support member 18 may not be an electrostatic chuck as long as an object to be processed is placed thereon.
- elements such as the electrode E1, the wiring WR3, and the wiring layer EW3 can be omitted from the mounting table 16.
- DESCRIPTION OF SYMBOLS 10 Plasma processing apparatus, 12 ... Processing container, 16 ... Mounting stand, 18 ... Supporting member, 18a ... Mounting region, 18b ... Outer peripheral region, 18m ... Main-body part, E1 ... Electrode for electrostatic attraction, HT ... Heater, EW1 ... wiring layer (first wiring layer), EW2 ... wiring layer (second wiring layer), EW3 ... wiring layer (third wiring layer), CT1 ... contact portion, CT2 ... contact portion, CT3 ... contact portion, 20 ... Base, 20a ... first region, 20b ... second region, 20m ... main part, 20i ... insulating part, TH1 ... through hole (first through hole), TH2 ...
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (9)
- 被処理体を支持するための支持部材であり、
前記被処理体を載置するための載置領域、及び、該載置領域を囲む外周領域を有するセラミック製の本体部と、
前記本体部内に設けられた一以上のヒータと、
前記本体部内において延在する一以上の第1配線層であり前記一以上のヒータの給電側にそれぞれ電気的に接続された該一以上の第1配線層と、
前記本体部内において延在する一以上の第2配線層であり前記一以上のヒータの基準電位側に電気的に接続された該一以上の第2配線層と、
前記外周領域において前記本体部から露出された複数の接点部であり、前記一以上の第1配線層及び前記一以上の第2配線層のそれぞれに電気的に接続された該複数の接点部と、
含む該支持部材と、
前記支持部材を支持する基台であり、前記載置領域をその上に支持する第1領域、及び、前記外周領域をその上に支持する第2領域を有し、該第2領域に前記複数の接点部にそれぞれ通じる複数の第1貫通孔が設けられた、該基台と、
前記複数の第1貫通孔を通って前記複数の接点部にそれぞれ接合される複数の配線と、
を備える、載置台。 - 前記一以上のヒータは、複数のヒータであり、
前記一以上の第1配線層は、前記複数のヒータの給電側にそれぞれ接続された複数の第1配線層である、
請求項1に記載の載置台。 - 前記一以上の第2配線層のうち少なくとも一つは、前記複数のヒータのうち二以上のヒータの基準電位側に接続されている、
請求項2に記載の載置台。 - 前記基台には、冷媒が供給される冷媒流路が形成されている、請求項1~3の何れか一項に記載の載置台。
- 前記支持部材は、静電吸着用電極、該静電吸着用電極に電気的に接続する第3配線層、及び、該第3配線層に電気的に接続する別の接点部を、前記本体部内に更に有し、
前記別の接点部は、前記外周領域において前記本体部から露出されており、
前記第2領域には、前記別の接点部に通じる第2貫通孔が設けられており、
前記第2貫通孔を通って前記別の接点部に接合される別の配線を更に備える、
請求項1~4の何れか一項に記載の載置台。 - 前記基台は、
前記第1領域及び前記第2領域を提供する導電性の主部と、
前記主部に取り外し可能に取り付けられた絶縁部であり、前記複数の第1貫通孔を提供する、該絶縁部と、
を有し、
前記複数の配線の各々は、一端及び他端を有する可撓性のリード線、該リード線の一端に結合され前記複数の接点部のうち対応の接点部に結合される第1端子、及び、前記リード線の他端に結合される第2端子を含み、該第1端子及び該リード線が通された第1貫通孔を画成する前記絶縁部の内面と該第1端子及び該リード線との間には、空間が介在している、
請求項1~5の何れか一項に記載の載置台。 - 前記基台は、
前記第1領域及び前記第2領域を提供する導電性の主部と、
前記主部に取り外し可能に取り付けられた第1絶縁部であり、前記複数の第1貫通孔を提供する、該第1絶縁部と、
前記主部に取り外し可能に取り付けられた第2絶縁部であり、前記第2貫通孔を提供する、該第2絶縁部と、
を有し、
前記複数の配線の各々は、一端及び他端を有する可撓性の第1リード線、該第1リード線の一端に結合され前記複数の接点部のうち対応の接点部に結合される第1端子、及び、前記第1リード線の他端に結合される第2端子を含み、該第1端子及び該第1リード線が通された第1貫通孔を画成する前記第1絶縁部の内面と該第1端子及び該第1リード線との間には、空間が介在しており、
前記別の配線は、一端及び他端を有する可撓性の第2リード線、該第2リード線の一端に結合され前記別の接点部に結合される第3端子、及び、前記第2リード線の他端に結合される第4端子を含み、前記第2貫通孔を画成する前記第2絶縁部の内面と該第3端子及び該第2リード線との間には、空間が介在している、
請求項5に記載の載置台。 - 前記第3端子と前記第2絶縁部との間に介在する筒状の絶縁部を更に備える、請求項7に記載の載置台。
- 被処理体にプラズマ処理を行うためのプラズマ処理装置であって、
処理容器と、
請求項1~8の何れか一項に記載された載置台であり、前記処理容器内に設けられた該載置台と、
を備えるプラズマ処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020167031072A KR102374521B1 (ko) | 2014-06-12 | 2015-06-01 | 재치대 및 플라즈마 처리 장치 |
CN201580024261.XA CN106463446B (zh) | 2014-06-12 | 2015-06-01 | 载置台及等离子体处理装置 |
US15/308,686 US10679869B2 (en) | 2014-06-12 | 2015-06-01 | Placing table and plasma treatment apparatus |
US16/866,232 US11373884B2 (en) | 2014-06-12 | 2020-05-04 | Placing table and plasma treatment apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-121454 | 2014-06-12 | ||
JP2014121454A JP6378942B2 (ja) | 2014-06-12 | 2014-06-12 | 載置台及びプラズマ処理装置 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/308,686 A-371-Of-International US10679869B2 (en) | 2014-06-12 | 2015-06-01 | Placing table and plasma treatment apparatus |
US16/866,232 Continuation US11373884B2 (en) | 2014-06-12 | 2020-05-04 | Placing table and plasma treatment apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015190333A1 true WO2015190333A1 (ja) | 2015-12-17 |
Family
ID=54833431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/065738 WO2015190333A1 (ja) | 2014-06-12 | 2015-06-01 | 載置台及びプラズマ処理装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US10679869B2 (ja) |
JP (1) | JP6378942B2 (ja) |
KR (1) | KR102374521B1 (ja) |
CN (1) | CN106463446B (ja) |
TW (1) | TWI663683B (ja) |
WO (1) | WO2015190333A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111584339A (zh) * | 2016-11-21 | 2020-08-25 | 东京毅力科创株式会社 | 载置台和等离子体处理装置 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6378942B2 (ja) * | 2014-06-12 | 2018-08-22 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
JP6693832B2 (ja) | 2016-07-29 | 2020-05-13 | 日本特殊陶業株式会社 | セラミックス部材 |
US20180190501A1 (en) * | 2017-01-05 | 2018-07-05 | Tokyo Electron Limited | Plasma processing apparatus |
JP7158131B2 (ja) * | 2017-05-30 | 2022-10-21 | 東京エレクトロン株式会社 | ステージ及びプラズマ処理装置 |
JP6905882B2 (ja) * | 2017-07-07 | 2021-07-21 | 日本特殊陶業株式会社 | 基板保持装置およびその製造方法 |
JP6866255B2 (ja) | 2017-08-09 | 2021-04-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
TWI829367B (zh) | 2017-11-16 | 2024-01-11 | 日商東京威力科創股份有限公司 | 電漿處理裝置、溫度控制方法及溫度控制程式 |
US11236422B2 (en) * | 2017-11-17 | 2022-02-01 | Lam Research Corporation | Multi zone substrate support for ALD film property correction and tunability |
JP2020004946A (ja) * | 2018-06-25 | 2020-01-09 | 日本特殊陶業株式会社 | 保持装置 |
KR20210019573A (ko) | 2018-07-05 | 2021-02-22 | 램 리써치 코포레이션 | 기판 프로세싱 시스템에서 기판 지지부의 동적 온도 제어 |
JP7126398B2 (ja) * | 2018-07-27 | 2022-08-26 | 日本特殊陶業株式会社 | 保持装置 |
JP7244348B2 (ja) | 2019-05-13 | 2023-03-22 | 東京エレクトロン株式会社 | プラズマ処理装置、温度制御方法および温度制御プログラム |
US11610799B2 (en) * | 2020-09-18 | 2023-03-21 | Applied Materials, Inc. | Electrostatic chuck having a heating and chucking capabilities |
JP2023004397A (ja) | 2021-06-25 | 2023-01-17 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000228270A (ja) * | 1998-11-30 | 2000-08-15 | Komatsu Ltd | 円盤状ヒータ及び温度制御装置 |
JP2003115529A (ja) * | 2001-10-05 | 2003-04-18 | Tomoegawa Paper Co Ltd | 静電チャック装置、その組立方法および静電チャック装置用部材 |
US20040206747A1 (en) * | 2001-04-11 | 2004-10-21 | Yasutaka Ito | Ceramic heater for semiconductor manufacturing/inspecting apparatus |
JP2014053481A (ja) * | 2012-09-07 | 2014-03-20 | Tokyo Electron Ltd | プラズマエッチング装置 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1120817B8 (en) * | 1991-03-26 | 2007-10-10 | Ngk Insulators, Ltd. | Use of a corrosion-resistant member |
IL126630A0 (en) * | 1996-04-29 | 1999-08-17 | Procter & Gamble | Forced air convection oven process for finishing french fries |
JP4690368B2 (ja) * | 2000-12-28 | 2011-06-01 | 東京エレクトロン株式会社 | 基板加熱装置および基板加熱方法 |
EP1406472A1 (en) * | 2001-07-09 | 2004-04-07 | Ibiden Co., Ltd. | Ceramic heater and ceramic joined article |
EP1484787A1 (en) * | 2002-03-13 | 2004-12-08 | Sumitomo Electric Industries, Ltd. | Holder for semiconductor production system |
JP2003300785A (ja) * | 2002-04-04 | 2003-10-21 | Ibiden Co Ltd | セラミック接合体およびセラミック接合体の製造方法 |
JP4376070B2 (ja) * | 2004-01-14 | 2009-12-02 | 日本碍子株式会社 | 加熱装置 |
JP4787636B2 (ja) * | 2006-03-13 | 2011-10-05 | 東京エレクトロン株式会社 | 高圧処理装置 |
US8226769B2 (en) * | 2006-04-27 | 2012-07-24 | Applied Materials, Inc. | Substrate support with electrostatic chuck having dual temperature zones |
JP2008118052A (ja) * | 2006-11-07 | 2008-05-22 | Shinko Electric Ind Co Ltd | 基板加熱装置 |
JP2009054720A (ja) * | 2007-08-24 | 2009-03-12 | Tokyo Electron Ltd | 処理装置 |
JP2010157559A (ja) * | 2008-12-26 | 2010-07-15 | Hitachi High-Technologies Corp | プラズマ処置装置 |
TW201131689A (en) * | 2009-07-21 | 2011-09-16 | Nikon Corp | Substrate holder system, substrate joining apparatus and method for manufacturing a device |
JP2011222931A (ja) * | 2009-12-28 | 2011-11-04 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
KR101357928B1 (ko) * | 2010-09-24 | 2014-02-03 | 엔지케이 인슐레이터 엘티디 | 반도체 제조 장치 부재 |
US9494875B2 (en) * | 2011-10-06 | 2016-11-15 | Asml Netherlands B.V. | Chuck, a chuck control system, a lithography apparatus and a method of using a chuck |
JP5917946B2 (ja) | 2012-02-24 | 2016-05-18 | 東京エレクトロン株式会社 | 基板載置台及びプラズマエッチング装置 |
JP3181603U (ja) * | 2012-12-03 | 2013-02-14 | 日本碍子株式会社 | 半導体製造装置 |
US10460968B2 (en) * | 2013-12-02 | 2019-10-29 | Applied Materials, Inc. | Electrostatic chuck with variable pixelated magnetic field |
WO2015141641A1 (ja) * | 2014-03-20 | 2015-09-24 | トヨタ自動車株式会社 | プラズマcvd装置 |
JP6324800B2 (ja) * | 2014-05-07 | 2018-05-16 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
JP6378942B2 (ja) * | 2014-06-12 | 2018-08-22 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
JP6452449B2 (ja) * | 2015-01-06 | 2019-01-16 | 東京エレクトロン株式会社 | 載置台及び基板処理装置 |
US10668558B2 (en) * | 2016-03-29 | 2020-06-02 | Ngk Insulators, Ltd. | Metal wiring bonding structure and production method therefor |
JP6698502B2 (ja) * | 2016-11-21 | 2020-05-27 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
-
2014
- 2014-06-12 JP JP2014121454A patent/JP6378942B2/ja active Active
-
2015
- 2015-06-01 CN CN201580024261.XA patent/CN106463446B/zh active Active
- 2015-06-01 US US15/308,686 patent/US10679869B2/en active Active
- 2015-06-01 KR KR1020167031072A patent/KR102374521B1/ko active IP Right Grant
- 2015-06-01 WO PCT/JP2015/065738 patent/WO2015190333A1/ja active Application Filing
- 2015-06-09 TW TW104118551A patent/TWI663683B/zh active
-
2020
- 2020-05-04 US US16/866,232 patent/US11373884B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000228270A (ja) * | 1998-11-30 | 2000-08-15 | Komatsu Ltd | 円盤状ヒータ及び温度制御装置 |
US20040206747A1 (en) * | 2001-04-11 | 2004-10-21 | Yasutaka Ito | Ceramic heater for semiconductor manufacturing/inspecting apparatus |
JP2003115529A (ja) * | 2001-10-05 | 2003-04-18 | Tomoegawa Paper Co Ltd | 静電チャック装置、その組立方法および静電チャック装置用部材 |
JP2014053481A (ja) * | 2012-09-07 | 2014-03-20 | Tokyo Electron Ltd | プラズマエッチング装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111584339A (zh) * | 2016-11-21 | 2020-08-25 | 东京毅力科创株式会社 | 载置台和等离子体处理装置 |
Also Published As
Publication number | Publication date |
---|---|
CN106463446A (zh) | 2017-02-22 |
KR20170015882A (ko) | 2017-02-10 |
US20170140954A1 (en) | 2017-05-18 |
TWI663683B (zh) | 2019-06-21 |
US20200266081A1 (en) | 2020-08-20 |
CN106463446B (zh) | 2019-08-13 |
KR102374521B1 (ko) | 2022-03-15 |
TW201611179A (zh) | 2016-03-16 |
US11373884B2 (en) | 2022-06-28 |
JP6378942B2 (ja) | 2018-08-22 |
US10679869B2 (en) | 2020-06-09 |
JP2016001688A (ja) | 2016-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6378942B2 (ja) | 載置台及びプラズマ処理装置 | |
JP6442296B2 (ja) | 載置台及びプラズマ処理装置 | |
KR102383357B1 (ko) | 배치대 및 기판 처리 장치 | |
TWI651798B (zh) | 載置台及電漿處理裝置 | |
KR102434559B1 (ko) | 탑재대 및 플라즈마 처리 장치 | |
JP6265841B2 (ja) | プラズマ処理装置及びプラズマ処理装置の運用方法 | |
JP2011035266A (ja) | プラズマ処理装置及びプラズマ処理方法 | |
KR102411913B1 (ko) | 배치대 및 플라즈마 처리 장치 | |
JP2018110216A (ja) | プラズマ処理装置 | |
JP6283532B2 (ja) | 静電チャックの製造方法 | |
JP2016225018A (ja) | ガス処理装置およびそれに用いる多分割シャワーヘッド | |
JP2019033231A (ja) | プラズマ処理装置 | |
KR102000363B1 (ko) | 플라즈마 처리 장치 및 샤워 헤드 | |
JP2015095409A (ja) | 載置台及びプラズマ処理装置 | |
JP2019176030A (ja) | プラズマ処理装置 | |
JP2019176032A (ja) | プラズマ処理装置 | |
JP2011035052A (ja) | プラズマ処理装置用電極及びプラズマ処理装置 | |
WO2020059596A1 (ja) | 載置台及び基板処理装置 | |
KR20090115309A (ko) | 히터 장치 및 기판 처리 장치 그리고 이를 이용한 기판처리 방법 | |
TW202233023A (zh) | 電漿處理裝置與其製造方法及電漿處理方法 | |
JP6117763B2 (ja) | プラズマ処理装置 | |
JP2021052032A (ja) | 誘電体部品、構造体及び基板処理装置 | |
JP2005093705A (ja) | プラズマ生成装置及びプラズマ生成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15806539 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15308686 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 20167031072 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 15806539 Country of ref document: EP Kind code of ref document: A1 |