WO2015180798A1 - Carrier and method for supporting a substrate in a vacuum processing chamber - Google Patents

Carrier and method for supporting a substrate in a vacuum processing chamber Download PDF

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Publication number
WO2015180798A1
WO2015180798A1 PCT/EP2014/061280 EP2014061280W WO2015180798A1 WO 2015180798 A1 WO2015180798 A1 WO 2015180798A1 EP 2014061280 W EP2014061280 W EP 2014061280W WO 2015180798 A1 WO2015180798 A1 WO 2015180798A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
carrier
supporting
bending axis
distance
Prior art date
Application number
PCT/EP2014/061280
Other languages
French (fr)
Inventor
Ralph Lindenberg
Wolfgang Klein
Simon Lau
Thomas Berger
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to KR2020167000065U priority Critical patent/KR20170000465U/en
Priority to CN201490001478.XU priority patent/CN206927946U/en
Priority to PCT/EP2014/061280 priority patent/WO2015180798A1/en
Priority to TW104117013A priority patent/TW201607906A/en
Publication of WO2015180798A1 publication Critical patent/WO2015180798A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

Definitions

  • Embodiments of the present disclosure relate to a carrier and a method for supporting a substrate in a vacuum processing chamber, and relate to an apparatus for depositing a layer on a substrate.
  • Embodiments particularly relate to carriers for substrate processing, e.g., for layer deposition, and to carriers for supporting a large area substrate in a processing apparatus for processing a large area substrate.
  • substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process etc.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • the process can be performed in a processing apparatus or processing chamber, where the substrate to be coated is located.
  • a deposition material is provided in the processing apparatus.
  • a plurality of materials, but also oxides, nitrides or carbides thereof, may be used for deposition on the substrate.
  • other processing steps like etching, structuring, annealing, or the like can be conducted in processing chambers.
  • Coated materials may be used in several applications and in several technical fields. For instance, an application lies in the field of microelectronics, such as generating semiconductor devices. Also, substrates for displays are often coated by a PVD process. Further applications include insulating panels, organic light emitting diode (OLED) panels, substrates with TFT, color filters or the like.
  • OLED organic light emitting diode
  • Substrates can be supported on carriers, particularly during processing of the substrate.
  • the carrier drives the glass or the substrate through the processing apparatus.
  • the carrier can support a surface of the substrate e.g. along the periphery thereof or the surface as such.
  • a frame shaped carrier can be used to mask a glass substrate, wherein the carrier provides an aperture for coating material to be deposited on the exposed substrate portion or an aperture for other processing steps acting on the substrate portion, which is exposed by the aperture.
  • the tendency to larger and also thinner substrates can result in an instability of the substrate positioning e.g. due to arbitrary bending, sagging and/or bulging of the substrate, in particular when the substrate is carried in a vertical alignment and/or due to stress applied to the substrate during deposition of the layers.
  • Such an instability of the substrate positioning can, in turn, cause problems due to an increasing likelihood of breakage, high stress in an area of holding devices or fixations, shaking during venting etc.
  • a quality, e.g., uniformity, of the deposited layers can be reduced.
  • a carrier for supporting a substrate in a vacuum processing chamber having a linear transportation path includes a carrier body configured for transportation along the linear transportation path, and at least one substrate supporting arrangement provided at the carrier body and configured for supporting the substrate, wherein the substrate supporting arrangement is configured to define at least one bending axis for the substrate, wherein the at least one bending axis has an essentially vertical orientation.
  • an apparatus for depositing a layer on a substrate includes a vacuum processing chamber having a linear transportation path and adapted for layer deposition therein, a carrier within the processing chamber, and a deposition source for depositing material forming the layer.
  • the carrier includes a carrier body configured for transportation along the linear transportation path, and at least one substrate supporting arrangement provided at the carrier body and configured for supporting the substrate, wherein the substrate supporting arrangement is configured to define at least one bending axis for the substrate, wherein the at least one bending axis has an essentially vertical orientation.
  • a method for supporting a substrate in a vacuum processing chamber includes bending the substrate about at least one bending axis, wherein the at least one bending axis has an essentially vertical orientation.
  • a carrier for supporting a substrate in a vacuum processing chamber having a linear transportation path includes a carrier body configured for transportation along the linear transportation path, wherein the carrier body is configured to support the substrate in a vertical orientation, and at least one substrate supporting arrangement provided at the carrier body and configured for supporting the substrate, wherein the substrate supporting arrangement is configured to define at least one bending axis for the substrate, wherein the at least one bending axis has an essentially vertical orientation.
  • the substrate supporting arrangement further includes at least one of at least one support surface configured for supporting the substrate, wherein the at least one support surface has a curvature defining the at least one bending axis for the substrate, and two or more holding devices, the two or more holding devices are arranged to hold the substrate at a first distance from the linear transportation path at a first position and at a second distance from the linear transportation path at a second position, wherein the first distance is greater than the second distance.
  • Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method step. These method steps may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. It includes method steps for carrying out every function of the apparatus.
  • FIG. 1A illustrates a perspective view of a carrier according to embodiments described herein;
  • FIG. IB illustrates a top view of the carrier of figure 1A supporting a substrate
  • FIG. 2A illustrates a perspective view of another carrier according to further embodiments described herein;
  • FIG. 2B illustrates a top view of the carrier of figure 2A supporting a substrate
  • FIG. 3A illustrates a perspective view of still another carrier according to further embodiments described herein;
  • FIG. 3B illustrates a top view of the carrier of figure 3A supporting a substrate
  • FIG. 4A illustrates a perspective view of yet another carrier according to further embodiments described herein;
  • FIG. 4B illustrates a top view of the carrier of figure 4A supporting a substrate
  • FIGs. 5 A and 5B illustrate top views of carriers according to embodiments described herein;
  • FIGs. 6 A, 6B and 6C illustrate top views of carriers according to embodiments described herein;
  • FIG. 7 shows a sectional view of an apparatus for depositing a layer of material on a substrate utilizing a carrier according to embodiments described herein;
  • FIG. 8 shows a flow chart of a method for supporting a substrate in a vacuum processing chamber utilizing a carrier according to embodiments described herein.
  • a carrier for supporting a substrate in a vacuum processing chamber having a linear transportation path includes a carrier body configured for transportation along the linear transportation path, and at least one substrate supporting arrangement provided at the carrier body and configured for supporting the substrate, wherein the substrate supporting arrangement is configured to define at least one bending axis for the substrate, and wherein the at least one bending axis has an essentially vertical orientation.
  • the substrate in order to stabilize the substrate e.g. in a vertical position, is bent about the at least one bending axis. Applying a shape to the substrate by bending the substrate about the bending axis can increase a structural strength of the substrate. In some implementations, more than one bending axis is provided.
  • the substrate supporting arrangement configured to define the at least one bending axis for the substrate, the substrate can be stably positioned on, and held by, the carrier.
  • the substrate supporting arrangement is configured to define the at least one bending axis, i.e. a number of n bending axes, wherein n is an integer equal to or greater than 1 (n > 1). n can for example be in the range of 1 to 10, specifically in the range of 1 to 5, and more specifically 1, 2, 3, 4 or 5. [0020] According to some embodiments, which can be combined with other embodiments described herein, the substrate supporting arrangement is configured to define the at least one bending axis for the substrate to apply a concave or convex shape to the substrate.
  • concave as used herein may mean curving in or inwardly rounded about the at least one bending axis, wherein the at least one bending axis can be an axis of symmetry of the concave shape applied to the substrate.
  • convex as used herein may mean curved or rounded outward e.g. about the at least one bending axis, wherein the at least one bending axis can be an axis of symmetry of the convex shape applied to the substrate.
  • substrate as used herein shall embrace substrates, which can be used for display manufacturing, such as glass or plastic substrates.
  • substrates as described herein shall embrace substrates, which can be used for an LCD (Liquid Crystal Display), a PDP (Plasma Display Panel), and the like.
  • LCD Liquid Crystal Display
  • PDP Plasma Display Panel
  • substrate can be understood as "large area substrate”.
  • the substrate may have a size of at least
  • a large area substrate can be GEN 5, which corresponds to about 1.4 m substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.39 m substrates (1.95 m x 2.25 m), GEN 8.5, which corresponds to about 5.5 m 2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.
  • the substrate may be made from any material suitable for material deposition.
  • the substrate may be made from a material selected from the group consisting of glass (for instance soda-lime glass, borosilicate glass etc.), metal, polymer, ceramic, compound materials or any other material or combination of materials, which can be coated by a deposition process.
  • glass for instance soda-lime glass, borosilicate glass etc.
  • metal for instance soda-lime glass, borosilicate glass etc.
  • metal for instance soda-lime glass, borosilicate glass etc.
  • metal for instance soda-lime glass, borosilicate glass etc.
  • metal for instance soda-lime glass, borosilicate glass etc.
  • metal for instance soda-lime glass, borosilicate glass etc.
  • polymer for instance soda-lime glass, borosilicate glass etc.
  • ceramic compound materials or any other material or combination of materials
  • the carriers can improve a stability of the substrate or the substrate positioning.
  • Figure 1A illustrates a perspective view of a carrier 100 according to embodiments described herein
  • figure IB illustrates a top view of the carrier 100 of figure 1A supporting a substrate 101.
  • the carrier 100 includes a carrier body 110 configured for transportation along a linear transportation path, and at least one substrate supporting arrangement 120 provided at the carrier body 110 and configured for supporting the substrate 101, wherein the substrate supporting arrangement 120 is configured to define or provide at least one bending axis 130 for the substrate 101, and wherein the at least one bending axis 130 has an essentially vertical orientation.
  • the term "vertical direction” or “vertical orientation” is understood to distinguish over “horizontal direction” or “horizontal orientation”. That is, the “vertical direction” or “vertical orientation” relates to a substantially vertical orientation e.g. of the carrier and the substrate, wherein a deviation of a few degrees, e.g. up to 10° or even up to 15°, from an exact vertical direction or vertical orientation is still considered as “vertical direction” or “vertical orientation”.
  • the vertical direction or vertical orientation is indicated with reference numeral 131.
  • the vertical direction can be substantially parallel to the force of gravity.
  • the substrate supporting arrangement 120 has at least one support surface 121 configured for supporting the substrate 101, wherein the at least one support surface 121 has a curvature defining the at least one bending axis 130 for the substrate 101.
  • the at least one support surface 121 is a continuous or uninterrupted surface.
  • the at least one support surface 121 can include two or more segments, specifically separated segments, and more specifically spatially separated segments.
  • the at least one support surface 121 has the curvature. In other words, the at least one support surface 121 is a curved or shaped surface.
  • curvature may refer to a non- flat surface, and may particularly refer to an amount by which the at least one support surface 121 deviates from being flat.
  • the curvature may be a concave curvature. In other embodiments, the curvature may be a convex curvature.
  • the curvature has a circular shape, particularly wherein the curvature is a segment of a circle. As shown in figures 1A and IB, the curvature has a radius. The radius may be constant to define a segment of a circle. Other shapes of the curvature are possible, such as a wavelike shape, as will be explained later with reference to figure 6.
  • the at least one support surface 121 extends in a first direction 132, wherein the at least one bending axis 130 is substantially perpendicular to the first direction 132.
  • the first direction 132 can be a lengthwise direction of the at least one support surface 121.
  • the first direction is a horizontal direction, particularly wherein the horizontal direction is substantially perpendicular to the force of gravity.
  • the term "horizontal direction” or “horizontal orientation” is understood to distinguish over the above-mentioned “vertical direction”. That is, the "horizontal direction” relates to a substantially horizontal orientation, i.e., substantially perpendicular to the force of gravity, wherein a deviation of a few degrees, e.g. up to 10° or even up to 15°, from an exact horizontal direction or horizontal orientation is still considered as “horizontal direction” or “horizontal orientation”.
  • the carrier body 110 includes a frame having one or more frame elements.
  • the one or more frame elements include a first frame element and a second frame element, wherein the at least one support surface includes a first support surface provided by the first frame element and a second support surface provided by the second frame element.
  • the frame of the carrier body 110 includes a first frame element 111, a second frame element 113, a third frame element 112 and a fourth frame element 114.
  • the first frame element 111 provides the first support surface 121 of the supporting arrangement 120
  • the second frame element 113 provides the second support surface 121 ' of the supporting arrangement 120.
  • the first frame element 111 and the second frame element 113 can be oriented substantially parallel, and/or the third frame element 112 and the fourth frame element 114 can be oriented substantially parallel.
  • the first frame element 111 and the second frame element 113 extend substantially parallel in the horizontal direction, particularly wherein the horizontal direction is substantially perpendicular to the force of gravity.
  • the first frame element 111 and the second frame element 113 can be referred to as top bar and bottom bar, respectively.
  • the third frame element 112 and the fourth frame element 114 can be referred to as side bars.
  • the at least one substrate supporting arrangement is configured for supporting e.g. a large area substrate 101.
  • the at least one support surface 121 can be configured to be in contact with a perimeter portion of the substrate 101.
  • the at least one substrate support surface 121 may also be referred to as "substrate receiving surface”.
  • the carrier body is configured to support the substrate in a vertical orientation.
  • the carriers described herein and the apparatuses for utilizing the carriers described herein are for vertical substrate processing.
  • the term “vertical substrate processing” is understood to distinguish over “horizontal substrate processing”. That is, vertical substrate processing relates to a substantially vertical orientation of the carrier and the substrate during substrate processing, wherein a deviation of a few degrees, e.g. up to 10° or even up to 15°, from an exact vertical orientation is still considered as vertical substrate processing.
  • the carrier body has an aperture opening configured to accommodate the substrate.
  • the one or more frame elements of the frame form the aperture opening, e.g., aperture opening 115, configured to accommodate the substrate 101.
  • the aperture opening 115 may also be referred to as "window".
  • the carrier body is made of metal or plastic.
  • the frame having the one or more frame elements can be made of metal or plastic.
  • the carrier body 110 can be made of aluminum, aluminum alloys, titanium, alloys thereof, stainless steel or the like. E.g. for small large area substrates, e.g. GEN 5 or below, the carrier body 110 can be manufactured from a single piece, i.e. the carrier body 110 can be integrally formed.
  • the carrier body 110 can include two or more single elements such as the frame elements, e.g., a top bar, sidebars and a bottom bar.
  • the carriers according to the embodiments described herein can be utilized for PVD deposition processes, CVD deposition processes, substrate structuring edging, heating (e.g. annealing) or any kind of substrate processing.
  • Embodiments of carriers as described herein and methods for utilizing such carriers are particularly useful for non-stationary, i.e. continuous substrate processing.
  • the carriers can be provided for processing vertically oriented large area glass substrates.
  • Non- Stationary processing typically requires that the carrier also provides masking elements for the process.
  • the carrier according to embodiments described herein can also mask the substrate.
  • the aperture opening in the carrier body or frame can provide an aperture for coating material to be deposited on the exposed substrate portion or an aperture for other processing steps acting on the substrate portion, which is exposed by the aperture.
  • a masking device can be provided that is configured for masking portions of the substrate so that the coating material can be deposited only on substrate portions exposed by the mask device.
  • the masking can be provided by a separate edge exclusion mask, which can be provided in the processing chamber.
  • Figure 2A illustrates a perspective view of a carrier 200 according to further embodiments described herein, and figure 2B illustrates a top view of the carrier 200 of figure 2A supporting the substrate 101.
  • the carrier 200 of figures 2A and 2B is similar to the carrier 100 described above with reference to figures 1A and IB, the difference being the configuration of the at least one substrate supporting arrangement.
  • the above given descriptions of similar of identical features also apply to the embodiment of figures 2A and 2B and are not repeated.
  • the substrate supporting arrangement includes two or more holding devices, the two or more holding devices are arranged to hold the substrate at a first distance from the linear transportation path at a first position and at a second distance from the linear transportation path at a second position, wherein the first distance is greater than the second distance.
  • the substrate supporting arrangement includes the two or more holding devices, wherein the two or more holding devices are arranged to hold the substrate 101 at the first distance from the carrier body 110 or frame at the first position and at the second distance from the carrier body 110 or frame at the second position, wherein the first distance is greater than the second distance.
  • the one or more holding devices are configured for fixing the substrate 101 to the carrier body 110 or frame and holding it in place e.g. during the deposition process.
  • the linear transportation path 133 is essentially parallel to the first direction 132, wherein the first direction 132 may be the horizontal direction.
  • two or more holding devices are provided, e.g., two first holding devices 210 and a second holding device 220.
  • the first holding devices 210 are arranged to hold the substrate 101 at the first distance from the linear transportation path 133 at the first position.
  • the first holding devices 210 are arranged to hold the substrate 101 at the first distance from the carrier body 110 or frame at the first position.
  • the second holding device 220 is arranged to hold the substrate 101 at the second distance from the linear transportation path 133 at the second position, wherein the first distance is greater than the second distance.
  • the second holding device 220 is arranged to hold the substrate 101 at the second distance from the carrier body 110 or frame at the second position.
  • the two or more holding devices can be configured to apply a circular shape or a wavelike shape to the substrate 101, particularly a convex or concave shape.
  • At least one of the two or more holding devices 210, 220 includes a distance element, such as distance elements 211 and 221, providing the first distance or the second distance from the linear transportation path 133, and a holding element, such as holding elements 212 and 222, configured for contacting and/or holding the substrate 101.
  • the two or more holding devices may include a hanging or mounting suspension for holding the substrate 101 in a hanging or suspended position.
  • the holding element of the holding device can be configured for holding the substrate 101 in the hanging or suspended position.
  • the one or more holding devices are configured to hold the substrate by applying a holding force to extended surfaces of the substrate 101, e.g., on the extended surface to be coated.
  • a clamp contacts both extended surfaces to hold or clamp the substrate 101.
  • holding devices 210 and 220 are shown in figures 2A and 2B, the present disclosure is not limited thereto. More than three holding devices could be provided. As an example, more than one holding device could be provided at at least one of the first frame element 111, the second frame element 113, the third frame element 112 and/or the fourth frame element 114.
  • Figure 3A illustrates a perspective view of a carrier 300 according to further embodiments described herein, and figure 3B illustrates a top view of the carrier 300 of figure 3 A supporting the substrate 101.
  • the carrier 300 of figures 3A and 3B is similar to the carrier 100 described above with reference to figures 1A and IB, the difference being that one or more holding devices 310 are provided and the substrate supporting arrangement 320 is configured to apply a convex shape to the substrate 101.
  • the above given descriptions of similar of identical features also apply to the embodiment of figures 3 A and 3B and are not repeated.
  • the one or more holding devices 310 can be configured similarly or identical to the holding devices described above with reference to figures 2A and 2B.
  • the one or more holding devices 310 can be configured to hold the substrate 101 at the at least one support surface, such as the first support surface 321 and the second support surface 321 ', having the curvature for defining or providing the at least one bending axis 130 for the substrate 101, particularly wherein the curvature is a convex curvature.
  • the one or more holding devices 310 are configured to hold the substrate 101 by applying a holding force to an extended surfaces of the substrate 101, e.g., on the extended surface to be coated.
  • a clamp contacts both extended surfaces to hold or clamp the substrate 101.
  • FIG. 3A and 3B Although four holding devices are shown in figures 3A and 3B, the present disclosure is not limited thereto. More than four holding devices could be provided. As an example, more than one holding device 310 could be provided at at least one of the first frame element 111, the second frame element 113, the third frame element 112 and/or the fourth frame element 114.
  • Figure 4A illustrates a perspective view of a carrier 400 according to further embodiments described herein, and figure 4B illustrates a top view of the carrier 400 of figure 4A supporting the substrate 101.
  • the substrate supporting arrangement includes or is a plate 410, e.g., a bended plate.
  • the plate can have the support surface, e.g. support surface 411.
  • the plate 410 can have a cylindrical shape, particularly wherein the plate 410 is a segment of a cylinder.
  • the cylinder may have a radius. The radius may be constant to define a segment of the cylinder.
  • Other shapes of the plate 410 are possible, e.g., a wavelike shape, particularly a sinusoidal shape.
  • the plate may be convexly or concavely shaped.
  • the substrate supporting arrangement includes the two or more holding devices, the two or more holding devices are arranged to hold the substrate at the first distance from the linear transportation path at the first position and at the second distance from the linear transportation path at the second position, wherein the first distance is greater than the second distance.
  • the two or more holding devices include at least one electrode configured for generating an electric field, particularly an electrostatic field.
  • the at least one electrode can be configured for holding the substrate 101 at the support surface 411, e.g., electrostatically.
  • at least one electrode 412 can be embedded in the plate 410 or may be provided at a side of the plate 410 opposite the support surface 411.
  • the substrate supporting arrangement, and particularly the two or more holding devices can be configured as a chuck.
  • Figures 5A and 5B illustrate top views of carriers according to embodiments described herein.
  • a configuration of the substrate supporting arrangement having the at least one support surface with the curvature is shown.
  • a configuration of the substrate supporting arrangement having the two or more holding devices is shown.
  • the carrier body 110 may have one or more contact surfaces configured for contacting the substrate 101.
  • the carrier body 110, and particularly the frame of the carrier body 110 may have one or more rounded edges that provide the contact surfaces.
  • the third frame element 112 and the fourth frame element 114 can each have a contact surface, e.g., provided by rounded edges of the third frame element 112 and the fourth frame element 114.
  • Figures 6 A, 6B and 6C illustrate top views of carriers according to embodiments described herein.
  • the substrate supporting arrangement is configured to define two or more bending axes for the substrate for applying a wavelike shape to the substrate, particularly a sinusoidal shape.
  • the curvature of the support surface 421 of the substrate supporting arrangement 420 has a wavelike shape, particularly a sinusoidal shape.
  • the curvature of the support surface 421 of the substrate supporting arrangement 420 provides or defines two or more bending axes 422 for the substrate 101. By the two or more bending axis 422, a wavelike shape can be applied to the substrate 101, particularly a sinusoidal shape.
  • two or more holding devices 440, 441 are provided.
  • the two or more holding devices 440, 441 are arranged to hold the substrate 101 at the first distance from the linear transportation path at the first position and at the second distance from the linear transportation path at the second position, wherein the first distance is greater than the second distance.
  • two or more first holding devices 440 are provided to hold the substrate 101 at the first distance from the linear transportation path at the first position, and particularly at the first distance from the carrier body or frame, e.g., the first frame element 111.
  • Two or more second holding devices 441 are provided to hold the substrate 101 at the second distance from the linear transportation path at the second position, and particularly at a second distance from the carrier body or frame, e.g., the first frame element 111.
  • a wavelike shape can be applied to the substrate 101, particularly a sinusoidal shape.
  • Figure 7 shows a view of an apparatus 500 for depositing a layer of material on the substrate 101 utilizing a carrier 510 according to embodiments described herein.
  • the apparatus 500 includes a vacuum processing chamber 512 having a linear transportation path and adapted for layer deposition therein, the carrier 510 within the processing chamber 512, and a deposition source 530 for depositing material forming the layer.
  • the carrier 510 is configured according to embodiments described herein.
  • the carrier 510 may e.g. be configured as anyone of the carriers described above with reference to figures 1 to 6.
  • the processing chamber 512 is adapted for a deposition process, such as a PVD or CVD process.
  • the substrate 101 is shown being located within or at the carrier 510 on a substrate transport device 520.
  • the deposition source 530 is provided in a chamber facing the side of the substrate 101 to be coated.
  • the deposition source 530 provides deposition material to be deposited on the substrate 101.
  • the deposition source 530 may be a target with deposition material thereon or any other arrangement allowing material to be released for deposition on the substrate 101.
  • the deposition source 530 may be a rotatable target. According to some embodiments, the deposition source 530 may be movable in order to position and/or replace the source. According to other embodiments, the deposition source 530 may be a planar target.
  • the deposition source 530 may be or include a cathode array.
  • the cathode array may include a plurality of material source devices.
  • the plurality of material source devices of the cathode array can be arranged with respect to the substrate 101 so as to have different distances to the substrate 101.
  • the material source devices of the cathode array can be arranged along a bended or curved line.
  • the plurality of material source devices can be positioned on a substantially straight line, wherein the bending axis of the carrier 510 is configured to apply a bending to the substrate 101 so that the material source devices of the cathode array are arranged at different distances to the substrate.
  • the material source devices of an end section of the cathode array can be arranged closer to the substrate than the material source devices of a center section of the cathode array, and a uniformity of the coated layers can be increased.
  • the deposition material may be chosen according to the deposition process and the later application of the substrate 101.
  • the deposition material of the deposition source 530 may be a material selected from the group consisting of: a metal, such as aluminum, molybdenum, titanium, copper, or the like, silicon, indium tin oxide, and other transparent conductive oxides.
  • Oxide-, nitride- or carbide-layers which can include such materials, can be deposited by providing the material from the deposition source 530 or by reactive deposition, i.e. the material from the deposition source 530 reacts with elements like oxygen, nitride, or carbon from a processing gas.
  • thin film transistor materials like siliconoxides, siliconoxynitrides, siliconnitrides, aluminumoxide, aluminumoxynitrides may be used as deposition material.
  • the substrate 101 is provided within or at the carrier 510, which can also serve as an edge exclusion mask, particularly for non-stationary deposition processes. Dashed lines 565 show exemplarily the path of the deposition material during operation of apparatus 500. According to other embodiments, which can be combined with other embodiments described herein, the masking can be provided by a separate edge exclusion mask, which is provided in the chamber 512.
  • the carrier according to embodiments described herein can be beneficial for stationary processes and also for non- stationary processes.
  • Figure 8 shows a flow chart of a method 800 for supporting a substrate in a vacuum processing chamber according to embodiments described herein. The method can include positioning the substrate at at least one support supporting arrangement (block 810), and bending the substrate about at least one bending axis, wherein the at least one bending axis has an essentially vertical orientation (block 820).
  • the method for supporting a substrate in a vacuum processing chamber can be conducted by means of computer programs, software, computer software products and the interrelated controllers, which can have a CPU, a memory, a user interface, and input and output means being in communication with the corresponding components of the apparatus for processing a large area substrate.
  • Embodiments can provide a stabilization of the substrate or the substrate positioning, particularly in light of the fact that the substrates are getting bigger in length and height, however, the thickness of the substrates decreases.

Abstract

A carrier (100) for supporting a substrate in a vacuum processing chamber having a linear transportation path is provided. The carrier (100) includes a carrier body (110) configured for transportation along the linear transportation path (133), and at least one substrate supporting arrangement (120) provided at the carrier body (110) and configured for supporting the substrate (101), wherein the substrate supporting arrangement (120) is configured to define at least one bending axis (130) for the substrate (101), wherein the at least one bending axis (130) has an essentially vertical orientation.

Description

CARRIER AND METHOD FOR SUPPORTING A SUBSTRATE IN A VACUUM
PROCESSING CHAMBER
TECHNICAL FIELD
[0001] Embodiments of the present disclosure relate to a carrier and a method for supporting a substrate in a vacuum processing chamber, and relate to an apparatus for depositing a layer on a substrate. Embodiments particularly relate to carriers for substrate processing, e.g., for layer deposition, and to carriers for supporting a large area substrate in a processing apparatus for processing a large area substrate.
BACKGROUND [0002] Several methods are known for depositing a material on a substrate. For example, substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process etc. The process can be performed in a processing apparatus or processing chamber, where the substrate to be coated is located. A deposition material is provided in the processing apparatus. A plurality of materials, but also oxides, nitrides or carbides thereof, may be used for deposition on the substrate. Further, other processing steps like etching, structuring, annealing, or the like can be conducted in processing chambers.
[0003] Coated materials may be used in several applications and in several technical fields. For instance, an application lies in the field of microelectronics, such as generating semiconductor devices. Also, substrates for displays are often coated by a PVD process. Further applications include insulating panels, organic light emitting diode (OLED) panels, substrates with TFT, color filters or the like.
[0004] Particularly for areas such as display production, manufacturing of thin-film solar cells and similar applications, large area glass substrates are processed. An increasing size of glass substrates makes handling, supporting and processing thereof, without sacrificing the throughput e.g. by glass breakage, challenging.
[0005] Substrates can be supported on carriers, particularly during processing of the substrate. The carrier drives the glass or the substrate through the processing apparatus. The carrier can support a surface of the substrate e.g. along the periphery thereof or the surface as such. Particularly, a frame shaped carrier can be used to mask a glass substrate, wherein the carrier provides an aperture for coating material to be deposited on the exposed substrate portion or an aperture for other processing steps acting on the substrate portion, which is exposed by the aperture.
[0006] The tendency to larger and also thinner substrates can result in an instability of the substrate positioning e.g. due to arbitrary bending, sagging and/or bulging of the substrate, in particular when the substrate is carried in a vertical alignment and/or due to stress applied to the substrate during deposition of the layers. Such an instability of the substrate positioning can, in turn, cause problems due to an increasing likelihood of breakage, high stress in an area of holding devices or fixations, shaking during venting etc. Further, a quality, e.g., uniformity, of the deposited layers can be reduced.
[0007] There is a need to stabilize the substrate or substrate position and to enable a carrier to transport bigger and thinner substrates without breakage, and to improve the quality of the deposited layers.
[0008] In view of the above, it is an object of the present disclosure to provide a carrier and a method for supporting a substrate in a vacuum processing chamber that overcomes at least some of the problems in the art.
SUMMARY
[0009] In light of the above, a carrier and a method for supporting a substrate in a vacuum processing chamber, and an apparatus for depositing a layer on a substrate are provided. Further aspects, benefits, and features of the present disclosure are apparent from the claims, the description, and the accompanying drawings.
[0010] According to an aspect of the present disclosure a carrier for supporting a substrate in a vacuum processing chamber having a linear transportation path is provided. The carrier includes a carrier body configured for transportation along the linear transportation path, and at least one substrate supporting arrangement provided at the carrier body and configured for supporting the substrate, wherein the substrate supporting arrangement is configured to define at least one bending axis for the substrate, wherein the at least one bending axis has an essentially vertical orientation.
[0011] According to another aspect of the present disclosure an apparatus for depositing a layer on a substrate is provided. The apparatus includes a vacuum processing chamber having a linear transportation path and adapted for layer deposition therein, a carrier within the processing chamber, and a deposition source for depositing material forming the layer. The carrier includes a carrier body configured for transportation along the linear transportation path, and at least one substrate supporting arrangement provided at the carrier body and configured for supporting the substrate, wherein the substrate supporting arrangement is configured to define at least one bending axis for the substrate, wherein the at least one bending axis has an essentially vertical orientation.
[0012] According to still another aspect of the present disclosure a method for supporting a substrate in a vacuum processing chamber is provided. The method includes bending the substrate about at least one bending axis, wherein the at least one bending axis has an essentially vertical orientation.
[0013] According to yet another aspect of the present disclosure a carrier for supporting a substrate in a vacuum processing chamber having a linear transportation path is provided. The carrier includes a carrier body configured for transportation along the linear transportation path, wherein the carrier body is configured to support the substrate in a vertical orientation, and at least one substrate supporting arrangement provided at the carrier body and configured for supporting the substrate, wherein the substrate supporting arrangement is configured to define at least one bending axis for the substrate, wherein the at least one bending axis has an essentially vertical orientation. The substrate supporting arrangement further includes at least one of at least one support surface configured for supporting the substrate, wherein the at least one support surface has a curvature defining the at least one bending axis for the substrate, and two or more holding devices, the two or more holding devices are arranged to hold the substrate at a first distance from the linear transportation path at a first position and at a second distance from the linear transportation path at a second position, wherein the first distance is greater than the second distance.
[0014] Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method step. These method steps may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. It includes method steps for carrying out every function of the apparatus.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the disclosure and are described in the following:
FIG. 1A illustrates a perspective view of a carrier according to embodiments described herein;
FIG. IB illustrates a top view of the carrier of figure 1A supporting a substrate; FIG. 2A illustrates a perspective view of another carrier according to further embodiments described herein;
FIG. 2B illustrates a top view of the carrier of figure 2A supporting a substrate;
FIG. 3A illustrates a perspective view of still another carrier according to further embodiments described herein;
FIG. 3B illustrates a top view of the carrier of figure 3A supporting a substrate;
FIG. 4A illustrates a perspective view of yet another carrier according to further embodiments described herein;
FIG. 4B illustrates a top view of the carrier of figure 4A supporting a substrate;
FIGs. 5 A and 5B illustrate top views of carriers according to embodiments described herein;
FIGs. 6 A, 6B and 6C illustrate top views of carriers according to embodiments described herein;
FIG. 7 shows a sectional view of an apparatus for depositing a layer of material on a substrate utilizing a carrier according to embodiments described herein; and
FIG. 8 shows a flow chart of a method for supporting a substrate in a vacuum processing chamber utilizing a carrier according to embodiments described herein. DETAILED DESCRIPTION OF EMBODIMENTS
[0016] Reference will now be made in detail to the various embodiments of the disclosure, one or more examples of which are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to same components. Generally, only the differences with respect to individual embodiments are described. Each example is provided by way of explanation of the disclosure and is not meant as a limitation of the disclosure. Further, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations.
[0017] According to an aspect of the present disclosure a carrier for supporting a substrate in a vacuum processing chamber having a linear transportation path is provided. The carrier includes a carrier body configured for transportation along the linear transportation path, and at least one substrate supporting arrangement provided at the carrier body and configured for supporting the substrate, wherein the substrate supporting arrangement is configured to define at least one bending axis for the substrate, and wherein the at least one bending axis has an essentially vertical orientation.
[0018] In some embodiments, in order to stabilize the substrate e.g. in a vertical position, the substrate is bent about the at least one bending axis. Applying a shape to the substrate by bending the substrate about the bending axis can increase a structural strength of the substrate. In some implementations, more than one bending axis is provided. By the substrate supporting arrangement configured to define the at least one bending axis for the substrate, the substrate can be stably positioned on, and held by, the carrier.
[0019] The substrate supporting arrangement is configured to define the at least one bending axis, i.e. a number of n bending axes, wherein n is an integer equal to or greater than 1 (n > 1). n can for example be in the range of 1 to 10, specifically in the range of 1 to 5, and more specifically 1, 2, 3, 4 or 5. [0020] According to some embodiments, which can be combined with other embodiments described herein, the substrate supporting arrangement is configured to define the at least one bending axis for the substrate to apply a concave or convex shape to the substrate. The term "concave" as used herein may mean curving in or inwardly rounded about the at least one bending axis, wherein the at least one bending axis can be an axis of symmetry of the concave shape applied to the substrate. The term "convex" as used herein may mean curved or rounded outward e.g. about the at least one bending axis, wherein the at least one bending axis can be an axis of symmetry of the convex shape applied to the substrate.
[0021] The term "substrate" as used herein shall embrace substrates, which can be used for display manufacturing, such as glass or plastic substrates. For example, substrates as described herein shall embrace substrates, which can be used for an LCD (Liquid Crystal Display), a PDP (Plasma Display Panel), and the like. The term "substrate" can be understood as "large area substrate".
[0022] According to some embodiments, the substrate may have a size of at least
0.174 m2. The size can be about 1.4 m 2 to about 8 m 2 , and specifically about 2 m 2 to about 9 m2 or even up to 12 m2. In some implementations, a large area substrate can be GEN 5, which corresponds to about 1.4 m substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.39 m substrates (1.95 m x 2.25 m), GEN 8.5, which corresponds to about 5.5 m2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.
[0023] In some implementations, the substrate may be made from any material suitable for material deposition. For instance, the substrate may be made from a material selected from the group consisting of glass (for instance soda-lime glass, borosilicate glass etc.), metal, polymer, ceramic, compound materials or any other material or combination of materials, which can be coated by a deposition process. An instability of the substrate or the substrate positioning, which might also affect the processing of the substrate, can be reduced by the carriers according to embodiments described herein. Particularly for glass substrates or ceramic substrates, where instability is a particular aspect, the carriers can improve a stability of the substrate or the substrate positioning. The carrier according to the embodiments disclosed herein may provide a stable positioning for substrates, e.g. glass substrates, having a thickness of less than 300 micrometers.
[0024] Figure 1A illustrates a perspective view of a carrier 100 according to embodiments described herein, and figure IB illustrates a top view of the carrier 100 of figure 1A supporting a substrate 101.
[0025] The carrier 100 includes a carrier body 110 configured for transportation along a linear transportation path, and at least one substrate supporting arrangement 120 provided at the carrier body 110 and configured for supporting the substrate 101, wherein the substrate supporting arrangement 120 is configured to define or provide at least one bending axis 130 for the substrate 101, and wherein the at least one bending axis 130 has an essentially vertical orientation.
[0026] The term "vertical direction" or "vertical orientation" is understood to distinguish over "horizontal direction" or "horizontal orientation". That is, the "vertical direction" or "vertical orientation" relates to a substantially vertical orientation e.g. of the carrier and the substrate, wherein a deviation of a few degrees, e.g. up to 10° or even up to 15°, from an exact vertical direction or vertical orientation is still considered as "vertical direction" or "vertical orientation". In the figures, the vertical direction or vertical orientation is indicated with reference numeral 131. The vertical direction can be substantially parallel to the force of gravity.
[0027] According to some embodiments, which can be combined with other embodiments described herein, the substrate supporting arrangement 120 has at least one support surface 121 configured for supporting the substrate 101, wherein the at least one support surface 121 has a curvature defining the at least one bending axis 130 for the substrate 101. In some embodiments, the at least one support surface 121 is a continuous or uninterrupted surface. In other embodiments, the at least one support surface 121 can include two or more segments, specifically separated segments, and more specifically spatially separated segments. [0028] According to some embodiments described herein, the at least one support surface 121 has the curvature. In other words, the at least one support surface 121 is a curved or shaped surface. The term "curvature" as used herein may refer to a non- flat surface, and may particularly refer to an amount by which the at least one support surface 121 deviates from being flat. The curvature may be a concave curvature. In other embodiments, the curvature may be a convex curvature.
[0029] In some implementations, the curvature has a circular shape, particularly wherein the curvature is a segment of a circle. As shown in figures 1A and IB, the curvature has a radius. The radius may be constant to define a segment of a circle. Other shapes of the curvature are possible, such as a wavelike shape, as will be explained later with reference to figure 6.
[0030] According to some embodiments described herein, the at least one support surface 121 extends in a first direction 132, wherein the at least one bending axis 130 is substantially perpendicular to the first direction 132. The first direction 132 can be a lengthwise direction of the at least one support surface 121.
[0031] As an example, the first direction is a horizontal direction, particularly wherein the horizontal direction is substantially perpendicular to the force of gravity. The term "horizontal direction" or "horizontal orientation" is understood to distinguish over the above-mentioned "vertical direction". That is, the "horizontal direction" relates to a substantially horizontal orientation, i.e., substantially perpendicular to the force of gravity, wherein a deviation of a few degrees, e.g. up to 10° or even up to 15°, from an exact horizontal direction or horizontal orientation is still considered as "horizontal direction" or "horizontal orientation".
[0032] According to some embodiments, which can be combined with other embodiments described herein, the carrier body 110 includes a frame having one or more frame elements. According to some embodiments, which can be combined with other embodiments described herein, the one or more frame elements include a first frame element and a second frame element, wherein the at least one support surface includes a first support surface provided by the first frame element and a second support surface provided by the second frame element. [0033] As shown in figure 1A, the frame of the carrier body 110 includes a first frame element 111, a second frame element 113, a third frame element 112 and a fourth frame element 114. The first frame element 111 provides the first support surface 121 of the supporting arrangement 120, and the second frame element 113 provides the second support surface 121 ' of the supporting arrangement 120. The first frame element 111 and the second frame element 113 can be oriented substantially parallel, and/or the third frame element 112 and the fourth frame element 114 can be oriented substantially parallel. In some implementations, the first frame element 111 and the second frame element 113 extend substantially parallel in the horizontal direction, particularly wherein the horizontal direction is substantially perpendicular to the force of gravity. The first frame element 111 and the second frame element 113 can be referred to as top bar and bottom bar, respectively. The third frame element 112 and the fourth frame element 114 can be referred to as side bars.
[0034] The at least one substrate supporting arrangement, particularly the at least one support surface, is configured for supporting e.g. a large area substrate 101. The at least one support surface 121 can be configured to be in contact with a perimeter portion of the substrate 101. According to some implementations, the at least one substrate support surface 121 may also be referred to as "substrate receiving surface".
[0035] According to some embodiments, which can be combined with other embodiments described herein, the carrier body is configured to support the substrate in a vertical orientation.
[0036] As an example, the carriers described herein and the apparatuses for utilizing the carriers described herein are for vertical substrate processing. The term "vertical substrate processing" is understood to distinguish over "horizontal substrate processing". That is, vertical substrate processing relates to a substantially vertical orientation of the carrier and the substrate during substrate processing, wherein a deviation of a few degrees, e.g. up to 10° or even up to 15°, from an exact vertical orientation is still considered as vertical substrate processing. [0037] According to some embodiments, which can be combined with other embodiments described herein, the carrier body has an aperture opening configured to accommodate the substrate. As an example, the one or more frame elements of the frame form the aperture opening, e.g., aperture opening 115, configured to accommodate the substrate 101. The aperture opening 115 may also be referred to as "window".
[0038] According to some embodiments, which can be combined with other embodiments described herein, the carrier body is made of metal or plastic. As an example, the frame having the one or more frame elements can be made of metal or plastic. According to some embodiments, the carrier body 110 can be made of aluminum, aluminum alloys, titanium, alloys thereof, stainless steel or the like. E.g. for small large area substrates, e.g. GEN 5 or below, the carrier body 110 can be manufactured from a single piece, i.e. the carrier body 110 can be integrally formed. However, according to some embodiments, which can be combined with other embodiments described herein, the carrier body 110 can include two or more single elements such as the frame elements, e.g., a top bar, sidebars and a bottom bar.
[0039] The carriers according to the embodiments described herein can be utilized for PVD deposition processes, CVD deposition processes, substrate structuring edging, heating (e.g. annealing) or any kind of substrate processing. Embodiments of carriers as described herein and methods for utilizing such carriers are particularly useful for non-stationary, i.e. continuous substrate processing. The carriers can be provided for processing vertically oriented large area glass substrates. Non- Stationary processing typically requires that the carrier also provides masking elements for the process.
[0040] Particularly, the carrier according to embodiments described herein can also mask the substrate. As an example, the aperture opening in the carrier body or frame can provide an aperture for coating material to be deposited on the exposed substrate portion or an aperture for other processing steps acting on the substrate portion, which is exposed by the aperture. Also, a masking device can be provided that is configured for masking portions of the substrate so that the coating material can be deposited only on substrate portions exposed by the mask device. According to some embodiments, the masking can be provided by a separate edge exclusion mask, which can be provided in the processing chamber.
[0041] Figure 2A illustrates a perspective view of a carrier 200 according to further embodiments described herein, and figure 2B illustrates a top view of the carrier 200 of figure 2A supporting the substrate 101.
[0042] The carrier 200 of figures 2A and 2B is similar to the carrier 100 described above with reference to figures 1A and IB, the difference being the configuration of the at least one substrate supporting arrangement. The above given descriptions of similar of identical features also apply to the embodiment of figures 2A and 2B and are not repeated.
[0043] According to some embodiments, which can be combined with other embodiments described herein, the substrate supporting arrangement includes two or more holding devices, the two or more holding devices are arranged to hold the substrate at a first distance from the linear transportation path at a first position and at a second distance from the linear transportation path at a second position, wherein the first distance is greater than the second distance.
[0044] In some implementations, the substrate supporting arrangement includes the two or more holding devices, wherein the two or more holding devices are arranged to hold the substrate 101 at the first distance from the carrier body 110 or frame at the first position and at the second distance from the carrier body 110 or frame at the second position, wherein the first distance is greater than the second distance.
[0045] According to some embodiments, the one or more holding devices are configured for fixing the substrate 101 to the carrier body 110 or frame and holding it in place e.g. during the deposition process. In some implementations, the linear transportation path 133 is essentially parallel to the first direction 132, wherein the first direction 132 may be the horizontal direction.
[0046] As shown in figures 2A and 2B, two or more holding devices are provided, e.g., two first holding devices 210 and a second holding device 220. The first holding devices 210 are arranged to hold the substrate 101 at the first distance from the linear transportation path 133 at the first position. As an example, the first holding devices 210 are arranged to hold the substrate 101 at the first distance from the carrier body 110 or frame at the first position. The second holding device 220 is arranged to hold the substrate 101 at the second distance from the linear transportation path 133 at the second position, wherein the first distance is greater than the second distance. As an example, the second holding device 220 is arranged to hold the substrate 101 at the second distance from the carrier body 110 or frame at the second position. The two or more holding devices can be configured to apply a circular shape or a wavelike shape to the substrate 101, particularly a convex or concave shape.
[0047] In some implementations, at least one of the two or more holding devices 210, 220 includes a distance element, such as distance elements 211 and 221, providing the first distance or the second distance from the linear transportation path 133, and a holding element, such as holding elements 212 and 222, configured for contacting and/or holding the substrate 101. According to some embodiments, the two or more holding devices may include a hanging or mounting suspension for holding the substrate 101 in a hanging or suspended position. As an example, the holding element of the holding device can be configured for holding the substrate 101 in the hanging or suspended position.
[0048] In some implementations, the one or more holding devices are configured to hold the substrate by applying a holding force to extended surfaces of the substrate 101, e.g., on the extended surface to be coated. As an example, a clamp contacts both extended surfaces to hold or clamp the substrate 101.
[0049] Although three holding devices, i.e., holding devices 210 and 220, are shown in figures 2A and 2B, the present disclosure is not limited thereto. More than three holding devices could be provided. As an example, more than one holding device could be provided at at least one of the first frame element 111, the second frame element 113, the third frame element 112 and/or the fourth frame element 114.
[0050] Figure 3A illustrates a perspective view of a carrier 300 according to further embodiments described herein, and figure 3B illustrates a top view of the carrier 300 of figure 3 A supporting the substrate 101. [0051] The carrier 300 of figures 3A and 3B is similar to the carrier 100 described above with reference to figures 1A and IB, the difference being that one or more holding devices 310 are provided and the substrate supporting arrangement 320 is configured to apply a convex shape to the substrate 101. The above given descriptions of similar of identical features also apply to the embodiment of figures 3 A and 3B and are not repeated. The one or more holding devices 310 can be configured similarly or identical to the holding devices described above with reference to figures 2A and 2B.
[0052] The one or more holding devices 310 can be configured to hold the substrate 101 at the at least one support surface, such as the first support surface 321 and the second support surface 321 ', having the curvature for defining or providing the at least one bending axis 130 for the substrate 101, particularly wherein the curvature is a convex curvature. In some implementations, the one or more holding devices 310 are configured to hold the substrate 101 by applying a holding force to an extended surfaces of the substrate 101, e.g., on the extended surface to be coated. As an example, a clamp contacts both extended surfaces to hold or clamp the substrate 101.
[0053] Although four holding devices are shown in figures 3A and 3B, the present disclosure is not limited thereto. More than four holding devices could be provided. As an example, more than one holding device 310 could be provided at at least one of the first frame element 111, the second frame element 113, the third frame element 112 and/or the fourth frame element 114.
[0054] Figure 4A illustrates a perspective view of a carrier 400 according to further embodiments described herein, and figure 4B illustrates a top view of the carrier 400 of figure 4A supporting the substrate 101.
[0055] The carrier 400 of figures 4A and 4B is similar to the carriers described above with reference to figures 1 to 3. The above given descriptions of similar of identical features also apply to the embodiment of figures 4A and 4B and are not repeated. [0056] According to some embodiments, which can be combined with other embodiments described herein, the substrate supporting arrangement includes or is a plate 410, e.g., a bended plate. The plate can have the support surface, e.g. support surface 411. The plate 410 can have a cylindrical shape, particularly wherein the plate 410 is a segment of a cylinder. The cylinder may have a radius. The radius may be constant to define a segment of the cylinder. Other shapes of the plate 410 are possible, e.g., a wavelike shape, particularly a sinusoidal shape. In some implementations, the plate may be convexly or concavely shaped.
[0057] According to some embodiments, which can be combined with other embodiments described herein, the substrate supporting arrangement includes the two or more holding devices, the two or more holding devices are arranged to hold the substrate at the first distance from the linear transportation path at the first position and at the second distance from the linear transportation path at the second position, wherein the first distance is greater than the second distance. [0058] In some implementations, the two or more holding devices include at least one electrode configured for generating an electric field, particularly an electrostatic field. The at least one electrode can be configured for holding the substrate 101 at the support surface 411, e.g., electrostatically. As an example, at least one electrode 412 can be embedded in the plate 410 or may be provided at a side of the plate 410 opposite the support surface 411. In some implementations, the substrate supporting arrangement, and particularly the two or more holding devices, can be configured as a chuck.
[0059] Figures 5A and 5B illustrate top views of carriers according to embodiments described herein. In figure 5A, a configuration of the substrate supporting arrangement having the at least one support surface with the curvature is shown. In figure 5B, a configuration of the substrate supporting arrangement having the two or more holding devices is shown.
[0060] According to some embodiments, the carrier body 110 may have one or more contact surfaces configured for contacting the substrate 101. As an example, the carrier body 110, and particularly the frame of the carrier body 110 may have one or more rounded edges that provide the contact surfaces. As an example, the third frame element 112 and the fourth frame element 114 can each have a contact surface, e.g., provided by rounded edges of the third frame element 112 and the fourth frame element 114.
[0061] Figures 6 A, 6B and 6C illustrate top views of carriers according to embodiments described herein.
[0062] According to some embodiments, which can be combined with other embodiments described herein, the substrate supporting arrangement is configured to define two or more bending axes for the substrate for applying a wavelike shape to the substrate, particularly a sinusoidal shape.
[0063] In some implementations, as shown in figure 6A, the curvature of the support surface 421 of the substrate supporting arrangement 420 has a wavelike shape, particularly a sinusoidal shape. As an example, the curvature of the support surface 421 of the substrate supporting arrangement 420 provides or defines two or more bending axes 422 for the substrate 101. By the two or more bending axis 422, a wavelike shape can be applied to the substrate 101, particularly a sinusoidal shape.
[0064] As shown in figures 6B and 6C, two or more holding devices 440, 441 are provided. The two or more holding devices 440, 441 are arranged to hold the substrate 101 at the first distance from the linear transportation path at the first position and at the second distance from the linear transportation path at the second position, wherein the first distance is greater than the second distance. In figures 6B and 6C, two or more first holding devices 440 are provided to hold the substrate 101 at the first distance from the linear transportation path at the first position, and particularly at the first distance from the carrier body or frame, e.g., the first frame element 111. Two or more second holding devices 441 are provided to hold the substrate 101 at the second distance from the linear transportation path at the second position, and particularly at a second distance from the carrier body or frame, e.g., the first frame element 111. By the two or more holding devices 440, 441, a wavelike shape can be applied to the substrate 101, particularly a sinusoidal shape. [0065] Figure 7 shows a view of an apparatus 500 for depositing a layer of material on the substrate 101 utilizing a carrier 510 according to embodiments described herein.
[0066] The apparatus 500 includes a vacuum processing chamber 512 having a linear transportation path and adapted for layer deposition therein, the carrier 510 within the processing chamber 512, and a deposition source 530 for depositing material forming the layer. The carrier 510 is configured according to embodiments described herein. The carrier 510 may e.g. be configured as anyone of the carriers described above with reference to figures 1 to 6.
[0067] The processing chamber 512 is adapted for a deposition process, such as a PVD or CVD process. The substrate 101 is shown being located within or at the carrier 510 on a substrate transport device 520. The deposition source 530 is provided in a chamber facing the side of the substrate 101 to be coated. The deposition source 530 provides deposition material to be deposited on the substrate 101.
[0068] In figure 7, the deposition source 530 may be a target with deposition material thereon or any other arrangement allowing material to be released for deposition on the substrate 101. The deposition source 530 may be a rotatable target. According to some embodiments, the deposition source 530 may be movable in order to position and/or replace the source. According to other embodiments, the deposition source 530 may be a planar target.
[0069] According to some embodiments, the deposition source 530 may be or include a cathode array. The cathode array may include a plurality of material source devices.
[0070] The plurality of material source devices of the cathode array can be arranged with respect to the substrate 101 so as to have different distances to the substrate 101. In other words, in a top view, the material source devices of the cathode array can be arranged along a bended or curved line. By arranging the material source devices of the cathode array at different distances to the substrate, and particularly by arranging the material source devices of an end section of the cathode array closer to the substrate than the material source devices of a center section of the cathode array, a uniformity of the coated layers can be increased.
[0071] In some other implementations, the plurality of material source devices can be positioned on a substantially straight line, wherein the bending axis of the carrier 510 is configured to apply a bending to the substrate 101 so that the material source devices of the cathode array are arranged at different distances to the substrate. Particularly, the material source devices of an end section of the cathode array can be arranged closer to the substrate than the material source devices of a center section of the cathode array, and a uniformity of the coated layers can be increased.
[0072] According to some embodiments, the deposition material may be chosen according to the deposition process and the later application of the substrate 101. For instance, the deposition material of the deposition source 530 may be a material selected from the group consisting of: a metal, such as aluminum, molybdenum, titanium, copper, or the like, silicon, indium tin oxide, and other transparent conductive oxides. Oxide-, nitride- or carbide-layers, which can include such materials, can be deposited by providing the material from the deposition source 530 or by reactive deposition, i.e. the material from the deposition source 530 reacts with elements like oxygen, nitride, or carbon from a processing gas. According to some embodiments, thin film transistor materials like siliconoxides, siliconoxynitrides, siliconnitrides, aluminumoxide, aluminumoxynitrides may be used as deposition material.
[0073] The substrate 101 is provided within or at the carrier 510, which can also serve as an edge exclusion mask, particularly for non-stationary deposition processes. Dashed lines 565 show exemplarily the path of the deposition material during operation of apparatus 500. According to other embodiments, which can be combined with other embodiments described herein, the masking can be provided by a separate edge exclusion mask, which is provided in the chamber 512. The carrier according to embodiments described herein can be beneficial for stationary processes and also for non- stationary processes. [0074] Figure 8 shows a flow chart of a method 800 for supporting a substrate in a vacuum processing chamber according to embodiments described herein. The method can include positioning the substrate at at least one support supporting arrangement (block 810), and bending the substrate about at least one bending axis, wherein the at least one bending axis has an essentially vertical orientation (block 820).
[0075] According to embodiments described herein, the method for supporting a substrate in a vacuum processing chamber can be conducted by means of computer programs, software, computer software products and the interrelated controllers, which can have a CPU, a memory, a user interface, and input and output means being in communication with the corresponding components of the apparatus for processing a large area substrate.
[0076] Embodiments can provide a stabilization of the substrate or the substrate positioning, particularly in light of the fact that the substrates are getting bigger in length and height, however, the thickness of the substrates decreases.
[0077] While the foregoing is directed to embodiments of the disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A carrier for supporting a substrate in a vacuum processing chamber having a linear transportation path, comprising: a carrier body configured for transportation along the linear transportation path; and at least one substrate supporting arrangement provided at the carrier body and configured for supporting the substrate, wherein the substrate supporting arrangement is configured to define at least one bending axis for the substrate, wherein the at least one bending axis has an essentially vertical orientation.
2. The carrier according to claim 1, wherein the substrate supporting arrangement has at least one support surface configured for supporting the substrate, and wherein the at least one support surface has a curvature defining the at least one bending axis for the substrate.
3. The carrier of claim 2, wherein the at least one support surface extends in a first direction, wherein the at least one bending axis is substantially perpendicular to the first direction, and particularly wherein the first direction is a horizontal direction.
4. The carrier of one of claims 2 to 3, wherein the curvature has a circular shape, particularly wherein the curvature is a segment of a circle, or wherein the curvature has a wavelike shape, particularly a sinusoidal shape.
5. The carrier of one of claims 1 to 4, wherein the substrate supporting arrangement is configured to define two or more bending axis for the substrate for applying a wavelike shape to the substrate, particularly a sinusoidal shape.
6. The carrier of one of claims 1 to 5, wherein the carrier body includes a frame having one or more frame elements.
7. The carrier of one claim 6, wherein the one or more frame elements include a first frame element and a second frame element, particularly wherein the at least one support surface includes a first support surface provided by the first frame element and a second support surface provided by the second frame element.
8. The carrier of claim 7, wherein the first frame element and the second frame element extend substantially parallel in the horizontal direction, particularly wherein the horizontal direction is substantially perpendicular to the force of gravity.
9. The carrier according to any of claims 1 to 8, wherein the substrate supporting arrangement further comprises: two or more holding devices, the two or more holding devices are arranged to hold the substrate at a first distance from the linear transportation path at a first position and at a second distance from the linear transportation path at a second position, wherein the first distance is greater than the second distance.
10. The carrier of claim 9, wherein at least one of the two or more holding devices includes at least one electrode configured for generating an electric field.
11. The carrier of one of claims 1 to 10, the carrier body being configured to support the substrate in a vertical orientation.
12. The carrier of one of claims 1 to 11, wherein the carrier body has an aperture opening configured to accommodate the substrate.
13. An apparatus for depositing a layer on a substrate, comprising: a vacuum processing chamber having a linear transportation path and adapted for layer deposition therein, a carrier according to any of claims 1 to 12 within the processing chamber; and a deposition source for depositing material forming the layer.
14. A method for supporting a substrate in a vacuum processing chamber, the method comprising: bending the substrate about at least one bending axis, wherein the at least one bending axis has an essentially vertical orientation.
15. A carrier for supporting a substrate in a vacuum processing chamber having a linear transportation path, comprising: a carrier body configured for transportation along the linear transportation path, and wherein the carrier body is configured to support the substrate in a vertical orientation; and at least one substrate supporting arrangement provided at the carrier body and configured for supporting the substrate, wherein the substrate supporting arrangement is configured to define at least one bending axis for the substrate, wherein the at least one bending axis has an essentially vertical orientation, wherein the substrate supporting arrangement further comprises at least one of: at least one support surface configured for supporting the substrate, wherein the at least one support surface has a curvature defining the at least one bending axis for the substrate, and two or more holding devices, the two or more holding devices are arranged to hold the substrate at a first distance from the linear transportation path at a first position and at a second distance from the linear transportation path at a second position, wherein the first distance is greater than the second distance.
PCT/EP2014/061280 2014-05-30 2014-05-30 Carrier and method for supporting a substrate in a vacuum processing chamber WO2015180798A1 (en)

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KR2020167000065U KR20170000465U (en) 2014-05-30 2014-05-30 Carrier and method for supporting a substrate in a vacuum processing chamber
CN201490001478.XU CN206927946U (en) 2014-05-30 2014-05-30 For the carrier of supporting substrate in application of vacuum chamber and the equipment for the sedimentary on substrate
PCT/EP2014/061280 WO2015180798A1 (en) 2014-05-30 2014-05-30 Carrier and method for supporting a substrate in a vacuum processing chamber
TW104117013A TW201607906A (en) 2014-05-30 2015-05-27 Carrier and apparatus using the same and method for supporting a substrate in a vacuum processing chamber

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