WO2015176750A1

WO2015176750A1 - Deposition apparatus for deposition of a material on a substrate and method for depositing a material on a substrate

Info

Publication number: WO2015176750A1
Application number: PCT/EP2014/060359
Authority: WO
Inventors: Thomas Werner ZILBAUER; Anke Hellmich; Reiner Hinterschuster; Uwe Mühlfeld; Bernhard Stock; Hans Georg WOLF; Marcus Bender
Original assignee: Applied Materials, Inc.
Priority date: 2014-05-20
Filing date: 2014-05-20
Publication date: 2015-11-26
Also published as: TW201606104A; CN206624912U

Abstract

A deposition apparatus (300) for deposition of a material on a substrate is provided. The deposition apparatus (300) includes a first processing chamber (310) and a second processing chamber (320); at least one first deposition source (311) in the first processing chamber (310) and at least one second deposition source (321) in the second processing chamber (320); and at least one first shield device (350). The at least one first shield device (350) is configured to be moveable at least between a first position and a second position, wherein the at least one first shield device (350) is configured to shield the at least one first deposition source (311) when the at least one first shield device (350) is in the first position. The at least one first shield device (350) is configured to be moveable at least between the first processing chamber (310) and the second processing chamber (320).

Description

DEPOSITION APPARATUS FOR DEPOSITION OF A MATERIAL ON A SUBSTRATE AND METHOD FOR DEPOSITING A MATERIAL ON A

SUBSTRATE

FIELD

[0001] Embodiments of the present disclosure relate to a deposition apparatus for deposition of a material on a substrate and to a method for depositing a material on a substrate. Embodiments of the present disclosure particularly relate to a sputtering apparatus for deposition of layer stacks on a substrate and to a method for depositing layer stacks on a substrate.

BACKGROUND

[0002] Touch panels such as touch screen panels are a particular class of electronic visual displays, which are able to detect and locate a touch within a display area. Touch panels include layer stacks or transparent bodies resulting in a functional screen (like a touch screen panel). However, an inferior sunlight readability, a colored appearance (reflectance) of the touch panel and a color change with respect to the produced picture from an underlying display, and a more or less visible pattern from the structured core layer of the functional screen (e.g. a patterned transparent conductive oxide, TCO) is often obtained.

[0003] Different layer stack concepts are used in the manufacturing of touch panels. These layer stack concepts include for example a layer stack with an antireflective coating followed by a metal layer stack such as a Black Metal stack (e.g., for Black Metal Bridges or Black Metal Meshes). The layer stack concepts also include for example a layer stack with transparent insulating layers and a patterned TCO layer, e.g. a patterned indium tin oxide (ΠΌ) layer, such that the patterned TCO layer is invisible for a user ("invisible TCO" or "invisible (i-)ITO"). [0004] Manufacturers of touch panels have broad and changing product portfolios with the need to adapt quickly to a fast paced technological evolution. An easy and quick adaption of manufacturing equipment to different products, such as the above exemplary different layer stacks, is an aspect. As an example, in touch panel manufacturing a quick tool conversion from a layer stack with invisible TCO to a metal layer stack such as a Black Metal layer stack is beneficial. However, many of the process steps, for example in an in-line production tool, have space consuming gas separation units between adjacent process units and often separate deposition apparatuses are used for producing e.g. a layer stack with invisible TCO and a metal layer stack such as a Black Metal layer stack. [0005] In view of the above, a deposition apparatus for deposition of a material on a substrate and a method for depositing a material on a substrate, that overcome at least some of the problems in the art are needed.

SUMMARY [0006] In light of the above, a deposition apparatus for deposition of a material on a substrate and a method for depositing a material on a substrate are provided. Further aspects, benefits, and features of the present disclosure are apparent from the claims, the description, and the accompanying drawings.

[0007] According to an aspect of the present disclosure, a deposition apparatus for deposition of a material on a substrate is provided. The deposition apparatus includes a first processing chamber and a second processing chamber; at least one first deposition source in the first processing chamber and at least one second deposition source in the second processing chamber; and at least one first shield device. The at least one first shield device is configured to be moveable at least between a first position and a second position, wherein the at least one first shield device is configured to shield the at least one first deposition source when the at least one first shield device is in the first position, and wherein the at least one first shield device is configured to be moveable at least between the first process chamber and the second process chamber. [0008] According to another aspect of the present disclosure, a deposition apparatus for deposition of a material on a substrate is provided. The deposition apparatus includes a first processing chamber and a second processing chamber; at least one first deposition source in the first processing chamber and at least one second deposition source in the second processing chamber; and at least one first shield device. The at least one first shield device is configured to be moveable at least between a first position and a second position, wherein the at least one first shield device is configured to shield the at least one first deposition source when the at least one first shield device is in the first position. The deposition apparatus further includes at least one second shield device configured to be moveable at least between a third position and a fourth position, wherein the at least one second shield device is configured to shield the at least one second deposition source when the at least one second shield device is in the third position.

[0009] According to another aspect of the present disclosure, a method for depositing a material on a substrate is provided. The method includes moving at least one first shield device from a first position into a second position to shield or un-shield one of two or more deposition sources; depositing a first layer stack on the substrate; moving the at least one first shield device from the second position into the first position to un-shield or shield the one of the two or more deposition sources; and depositing a second layer stack on another substrate. [0010] According to still another aspect of the present disclosure, a deposition apparatus for deposition of one of a first layer stack and a second layer stack on a substrate is provided, wherein the second layer stack is different from the first layer stack. The deposition apparatus includes a first processing chamber and a second processing chamber; at least one first deposition source in the first processing chamber and at least one second deposition source in the second processing chamber; at least one first shield device in the first processing chamber, wherein the at least one first shield device is configured to be moveable at least between a first position and a second position, wherein the at least one first shield device is configured to shield the at least one first deposition source when the at least one first shield device is in the first position; and at least one second shield device in the second processing chamber, wherein the at least one second shield device is configured to be moveable at least between a third position and a fourth position, wherein the at least one second shield device is configured to shield the at least one second deposition source when the at least one second shield device is in the third position. The at least one first shield device is configured as a first gas separation shielding, and/or the at least one second shield device is configured as a second gas separation shielding. [0011] Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method step. These method steps may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. It includes method steps for carrying out every function of the apparatus.

BRIEF DESCRIPTION OF THE DRAWINGS

[0012] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the disclosure and are described in the following:

FIG. 1 shows a schematic view of a deposition apparatus for deposition of a material on a substrate;

FIG. 2 shows a schematic view of another deposition apparatus for deposition of a material on a substrate;

FIGs. 3A and 3B show schematic views of a deposition apparatus for deposition of a material on a substrate according to embodiments described herein;

FIGs. 4A and 4B show schematic views of another deposition apparatus for deposition of a material on a substrate according to embodiments described herein; FIGs. 5 A and 5B show schematic views of yet another deposition apparatus for deposition of a material on a substrate according to embodiments described herein; and

FIG. 6 shows a flow chart of a method for deposition of a material on a substrate according to embodiments described herein.

DETAILED DESCRIPTION OF EMBODIMENTS

[0013] Reference will now be made in detail to the various embodiments of the disclosure, one or more examples of which are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to same components. Generally, only the differences with respect to individual embodiments are described. Each example is provided by way of explanation of the disclosure and is not meant as a limitation of the disclosure. Further, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations.

[0014] Manufacturers of touch panels have broad and changing product portfolios with the need to adapt quickly to a fast paced technological evolution. An easy and quick adaption of manufacturing equipment to different products, such as different layer stacks, is an aspect. As an example, in touch panel manufacturing a quick tool conversion from invisible ΓΓΟ stacks to metal stacks such as Black Metal stacks for Black Metal Bridges or Black Metal Meshes is needed.

[0015] The present disclosure provides a deposition apparatus for deposition of a material on a substrate. The deposition apparatus includes a first processing chamber and a second processing chamber; at least one first deposition source in the first processing chamber and at least one second deposition source in the second processing chamber; and at least one first shield device. The at least one first shield device is configured to be moveable at least between a first position and a second position, wherein the at least one first shield device is configured to shield the at least one first deposition source when the at least one first shield device is in the first position, and wherein the at least one first shield device is configured to be moveable at least between the first process chamber and the second process chamber.

[0016] According to another aspect the present disclosure provides a deposition apparatus for deposition of a material on a substrate. The deposition apparatus includes a first processing chamber and a second processing chamber; at least one first deposition source in the first processing chamber and at least one second deposition source in the second processing chamber; and at least one first shield device. The at least one first shield device is configured to be moveable at least between a first position and a second position, wherein the at least one first shield device is configured to shield the at least one first deposition source when the at least one first shield device is in the first position. The deposition apparatus further includes at least one second shield device configured to be moveable at least between a third position and a fourth position, wherein the at least one second shield device is configured to shield the at least one second deposition source when the at least one second shield device is in the third position.

[0017] The disclosure provides a deposition apparatus including the at least one first shield device, the at least one first shield device having for example a shifting register type equipment configuration with movable gas separation units, which can work simultaneously as a gas separation as well and as a protection unit for deposition sources, such that one in-line system can provide for two or more layer stacks (i.e., stack concepts) with different materials.

[0018] The term "shield device" as used herein shall embrace devices configured to at least partially cover and/or protect deposition sources from its surroundings and devices providing a gas separation shielding allowing to provide or separate regions within the deposition apparatus or a processing chamber of the deposition apparatus for different partial pressures and/or process gases.

[0019] The term "substrate" as used herein shall embrace substrates which can be used for display manufacturing, such as glass or plastic substrates. For example, substrates as described herein shall embrace substrates which can be used for an LCD (Liquid Crystal Display), a PDP (Plasma Display Panel), and the like. Unless explicitly specified otherwise in the description, the term "substrate" is to be understood as "large area substrate" as specified herein.

[0020] According to some embodiments, large area substrates or respective carriers, wherein the carriers have one or more substrates, may have a size of at least 0.67 m². Typically, the size can be about 0.67m² (0.73x0.92m - Gen 4.5) to about 8 m², more typically about 2 m² to about 9 m² or even up to 12 m². Typically, the substrates or carriers, for which the structures and methods according to embodiments described herein are provided, are large area substrates as described herein. For instance, a large area substrate or carrier can be GEN 4.5, which corresponds to about 0.67 m² substrates (0.73x0.92m), GEN 5, which corresponds to about 1.4 m² substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m² substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m² substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m² substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented. [0021] The term "substrate" as used herein shall also embrace flexible substrates such as a web or a foil.

[0022] The term "transparent" as used herein shall particularly include the capability of a structure to transmit light with relatively low scattering, so that, for example, light transmitted therethrough can be seen in a substantially clearly manner. [0023] According to some embodiments, a layer stack is constituted by a number of layers or films formed (e.g., by deposition) one atop or over of another. In particular, embodiments herein include depositing a layer stack which may include at least one of a metal layer, a transparent insulating layer and a transparent conductive oxide layer such as an ITO layer. When reference is made to the term "over", i.e. one layer being over the other, it is understood that, starting from the substrate, a first layer is deposited over the substrate, and a further layer, deposited after the first layer, is thus over the first layer and over the substrate. In other words, the term "over" is used to define an order of layers, layer stacks, and/or films wherein the starting point is the substrate. [0024] According to some embodiments, which can be combined with other embodiments described herein, the deposition apparatus is configured to deposit at least a first layer stack and a second layer stack, particularly wherein the second layer stack is different from the first layer stack. The first layer stack and the second layer stack may include different materials or material layers. In exemplary implementations, the deposition apparatus is configured to deposit the first layer stack including at least one of indium tin oxide (ITO) and Nb_yO_x, Nb₂0₅, Si0₂, Ti0₂ and/or a metal, particularly Al, Mo and Cu, and/or the deposition apparatus is configured to deposit the second layer stack including at least one of MoNbO_xN_y, Al, AINd and MoNb or other alloys of Mo and Al. The disclosure provides the deposition apparatus including at least one first shield device, such that one in-line system can provide for two or more stack concepts with different materials.

[0025] Figure 1 shows a schematic view of a deposition apparatus 100 for deposition of a material on a substrate. The deposition apparatus 100 can be configured for deposition of a first layer stack including e.g. a metal layer stack such as a Black Metal stack (e.g., for Black Metal Bridges or Black Metal Meshes) and optionally an indium tin oxide (ITO) layer.

[0026] Exemplarily, in figure 1 the deposition apparatus 100 includes a first portion 110 for deposition of one or more metal layers and a second portion 120 for deposition of at least one ITO layer. The first portion 110 and the second portion 120 can be separated by a separation wall 170. The first portion 110 includes a plurality of first vacuum chambers, such as a first entry load lock chamber 111, a first processing chamber 112 and a first exit load lock chamber 113. Similarly, the second portion 120 includes a plurality of second vacuum chambers, such as a second entry load lock chamber 121, a second processing chamber 122 and a second exit load lock chamber 123. The first vacuum chambers and the second vacuum chambers can be separated from adjacent first vacuum chambers and the second vacuum chambers, respectively, by separation devices 160.

[0027] An atmosphere in one or more of the first vacuum chambers and/or in the second vacuum chambers can be individually controlled by generating a technical vacuum, for example with vacuum pumps 150 connected to at least some of the first vacuum chambers and the second vacuum chambers. As an example, the atmosphere can be individually controlled by generating a technical vacuum and/or by inserting process gases in deposition regions in the first processing chamber 112 and/or the second processing chamber 122.

[0028] A first substrate support 130, e.g. configured for transporting or conveying the substrate or a first carrier having the substrate disposed thereon, extends through the first portion 110, and a second substrate support 140, e.g. configured for transporting or conveying the substrate or a second carrier having the substrate disposed thereon, extends through the second portion 120. A transport direction of the substrate (not shown) through the first portion 110 and the second portion 120 is indicated with arrows 131. [0029] At least one first deposition source 116, at least one second deposition source 117, at least one third deposition source 118 and at least one fourth deposition source 119 can be provided in the first processing chamber 112. The at least one first deposition source 116, the at least one second deposition source 117, the at least one third deposition source 118 and the at least one fourth deposition source 119 can be configured for deposition of the metal layer stack, e.g. including a Black Metal Bridge or a Black Metal Mesh. As an example, the at least one first deposition source 116 can include a MF twin MoNb rotary cathode, the at least one second deposition source 117 can include a DC MoNb rotary cathode, the at least one third deposition source 118 can include a DC Al rotary cathode, and the at least one fourth deposition source 119 can include a DC MoNb rotary cathode.

[0030] A gas separation shielding 114 can be provided between e.g. the at least on first deposition source 116 and the at least one second deposition source 117. The gas separation shielding 114 can have at least one opening 115 for allowing a pumping therethrough. [0031] At least one fifth deposition source 124 and at least one sixth deposition source 125 are provided in the second processing chamber 122. The at least one fifth deposition source 124 and the at least one sixth deposition source 125 can be configured for deposition of the at least one ITO layer. At least one of the at least one fifth deposition source 124 and the at least one sixth deposition source 125 can include a DC ITO rotary cathode. [0032] The deposition apparatus 100 can be configured for deposition of the metal layer stack including e.g. MoNbO_xN_y and Al, and/or can be configured for deposition of the at least one ITO layer. For depositing the metal layer stack, the substrate to be processed can be inserted into the first processing chamber 112 via the first entry load lock chamber 111. The metal layers including e.g. MoNbO_xN_y and Al are deposited on the substrate, and the substrate exits the deposition apparatus 100 through the first exit load lock chamber 113. Subsequently, for depositing the at least one ITO layer, the substrate having the metal layers including e.g. MoNbO_xN_y and Al processed thereon is inserted into the second processing chamber 122 via the second entry load lock chamber 121. The at least one ITO layer is deposited over the substrate, and the substrate having the metal layer stack including MoNbO_xN_y and Al and the at least one ITO layer processed thereon exits the deposition apparatus 100 through the second exit load lock chamber 123.

[0033] Figure 2 shows a schematic view of a deposition apparatus 200 for deposition of a second layer stack, e.g. including one or more transparent insulating layer and at least one (patterned) TCO layer, e.g. a indium tin oxide (ITO) layer, such that the (patterned) TCO layer is invisible for a user ("invisible TCO" or "invisible (i-)ITO").

[0034] Exemplarily, in figure 2 the deposition apparatus 200 includes a first portion 210 for deposition of the one or more transparent insulating layers and a second portion 220 for deposition of the at least one ITO layer. The first portion 210 and the second portion 220 can be separated by a separation wall 270. The first portion 210 includes a plurality of first vacuum chambers, such as an entry load lock chamber 211 and a first processing chamber 212. The second portion 220 includes a plurality of second vacuum chambers, such as a second processing chamber 222 and an exit load lock chamber 221. The first vacuum chambers and the second vacuum chambers can be separated from adjacent first vacuum chambers and second vacuum chambers, respectively, by separation devices 260.

[0035] The deposition apparatus 200 may include one or more further vacuum chambers such as a transfer chamber 240. The transfer chamber 240 may connect the first portion 210 and the second portion 220. The transfer chamber 240 may include substrate transport means configured for transferring or transporting the substrate from the first portion 210, particularly from the first processing chamber 212, into the second portion 220, particularly the second processing chamber 222. [0036] An atmosphere in at least one of the first vacuum chambers, the second vacuum chambers and the further vacuum chambers such as the transfer chamber 240 can be individually controlled by generating a technical vacuum, for example with vacuum pumps 250 connected to one or more of the first vacuum chambers, the second vacuum chambers and the further vacuum chambers such as the transfer chamber 240. As an example, the atmosphere can be individually controlled by generating a technical vacuum and/or by inserting process gases in deposition regions in the first processing chamber 212 and/or in the second processing chamber 222.

[0037] A first substrate support 230, e.g. configured for transporting or conveying the substrate or a first carrier on which the substrate is disposed, extends through the first portion 210. A second substrate support 280, e.g. configured for transporting or conveying the substrate or a second carrier on which the substrate is disposed, extends through the second portion 220. A transport direction of the substrate through the first portion 210 is indicated with arrow 231 and a transport direction of the substrate through the second portion 220 is indicated with arrow 232. In the transfer chamber 240, the substrate may be transferred from the first substrate support 230 to the second substrate support 280.

[0038] At least one first deposition source 216, at least one second deposition source 217 and at least one third deposition source 218 can be provided in the first processing chamber 212. The at least one first deposition source 216, the at least one second deposition source 217 and the at least one third deposition source 218 can be configured for deposition of the one or more transparent insulating layers. As an example, the at least one first deposition source 216 can include a MF Ν¾₂0₅ rotary cathode pair, the at least one second deposition source 217 can include a MF Si0₂ rotary cathode pair, and the at least one third deposition source 218 can also include a MF Si0₂ rotary cathode pair. [0039] A gas separation shielding 214 can be provided between e.g. the at least on first deposition source 216 and the at least one second deposition source 217. The gas separation shielding 214 can have at least one opening 215 for allowing a pumping therethrough.

[0040] At least one fourth deposition source 224 and at least one fifth deposition source 225 is provided in the second processing chamber 222. The at least one fourth deposition source 224 and the at least one fifth deposition source 225 can be configured for deposition of the at least one ITO layer. At least one of the at least one fourth deposition source 224 and the at least one fifth deposition source 225 can be configured for deposition of ΠΌ, and may e.g. include a DC ITO rotary cathode. [0041] The deposition apparatus 200 can be configured for deposition of the second layer stack including the transparent insulating layers such as Nb₂0₅ and Si0₂ layers, and/or the at least one ITO layer. For depositing the second layer stack, the substrate to be processed can be inserted into the first processing chamber 212 via the entry load lock chamber 211. The transparent insulating layers such as Nb₂0₅ and Si0₂ layers are deposited on the substrate, and the substrate enters the transfer chamber 240 where it is transferred from the first substrate support 230 to the second substrate support 280. Subsequently, for depositing the at least one ITO layer, the substrate having the transparent insulating layers such as Nb₂0₅ and Si0₂ layers processed thereon is inserted into the second processing chamber 222 from the transfer chamber 240. The at least one ΓΓΟ layer is deposited over the substrate, and the substrate having the layer stack including the transparent insulating layers such as Nb₂0₅ and Si0₂ layers and the at least one ITO layer processed thereon exits the deposition apparatus 200 through the exit load lock chamber 223.

[0042] Figures 3A and 3B show schematic views of a deposition apparatus 300 for deposition of a material on a substrate 350 according to embodiments described herein. According to some embodiments, the deposition apparatus 300 is configured for depositing two or more different layer stacks, e.g., a first layer stack and a second layer stack with different materials.

[0043] The deposition 300 apparatus includes a first processing chamber 310 and a second processing chamber 320; at least one first deposition source 311 in the first processing chamber 310 and at least one second deposition source 321 in the second processing chamber 320; and at least one first shield device 350. The at least one first shield device 350 is configured to be moveable at least between a first position and a second position, wherein the at least one first shield device 350 is configured to shield the at least one first deposition source 311 when the at least one first shield device 350 is in the first position, and wherein the at least one first shield device 350 is configured to be moveable at least between the first process chamber 310 and the second process chamber 320.

[0044] In some implementations, the at least one first shield device 350 is configured to shield the at least one first deposition source 311 when the at least one first shield device 350 is in the first position, and is configured to not shield the at least one first deposition source 311 when the at least one first shield device 350 is in the second position. In other words, in the first position the at least one first shield device 350 is positioned between the at least one first deposition source 311 and a substrate support 330 and/or the substrate, such as a substrate 340, carried by the substrate support 330 so that a material cannot be deposited on the substrate 340. In the second position the at least one first shield device 350 is not positioned between the at least one first deposition source 311 and the substrate support 330 and/or the substrate 340 carried by the substrate support 330 so that a material can be deposited on the substrate 340.

[0045] In figure 3A the at least one first shield device 350 is in the second position, and does not shield the at least one first deposition source 311. In figure 3B the at least one first shield device 350 is in the first position, and shields the at least one first deposition source 311. In the configuration of figure 3 A, a first material provided by the at least one first deposition source 311 can be deposited on the substrate 340 and a second material provided by the at least one second deposition source 321 is not deposited on the substrate 350. In the configuration of figure 3B the first material provided by the at least one first deposition source 311 is not deposited on the substrate 340, and the second material provided by the at least one second deposition source 321 is deposited on the substrate 340.

[0046] According to some embodiments, which can be combined with other embodiments described herein, the deposition apparatus 300 further includes the substrate support 330 extending at least through the first processing chamber 310 and the second processing chamber 320, wherein, in the first position, the at least one first shield device 350 is at least partially positioned between the at least one first deposition source 311 and the substrate support 330 (see figure 3B). The substrate support 330 can be configured to transport or convey the substrate 340 in a transport direction indicated with arrow 341. [0047] According to some embodiments, which can be combined with other embodiments described herein, the at least one first shield device 350 is configured to shield the at least one second deposition source 321 when the at least one first shield device 350 is in the second position, as it is shown in figure 3A. [0048] According to some implementations, the substrate support 330 may include rollers to transport the substrate or a carrier having the substrate 340 disposed thereon into, through and out of the first processing chamber 310 and/or the second processing chamber

320. As an example, the first processing chamber 310 and the second processing chamber 320 can be separated by a separation device 360. The separation device 360 can include a valve 361, e.g. having a valve housing and a valve unit. The separation device 160, and particularly the valve 361, may be configured as a load lock between the first processing chamber 310 and the second processing chamber 320. The substrate support 330 may be configured for transporting the substrate 340 from the first processing chamber 310 into the second processing chamber 320 and/or for transporting the substrate 340 from the second processing chamber 320 into the first processing chamber 310 through the separation device 360.

[0049] In exemplary embodiments the at least one first shield device 350 is configured to be moveable at least between the first processing chamber 310 and the second processing chamber 320. As an example, the at least one first shield device 350 can be moved or transferred from the first processing chamber 310 into the second processing chamber 320 and/or from the second processing chamber 320 into the first processing chamber 310 through the separation device 360.

[0050] According to some implementations, the at least one first shield device 350 may include at least one opening 351, such as a slit or an aperture. The at least one opening 351 allows a pumping therethrough. As an example, one or more vacuum pumps 370 can be provided in a region of the first deposition source 311 and the second deposition source

321. When the at least one first shield device 350 is in the first position or in the second position, a pumping of the first processing chamber 310 or respectively of the second processing chamber 320, and particularly of a region of the substrate support 330, is possible through the at least one opening 351 of the at least one first shield device 350. [0051] According to some embodiments, which can be combined with other embodiments described herein, the at least one first shield device 350 is configured as a first gas separation shielding. As an example, the at least one first shield device allows to separate regions within the deposition apparatus 300 and/or to provide regions within the deposition apparatus 300 with different partial pressures and/or kind of the process gases. As an example, the deposition apparatus 300 may not include the separation device 360 between the first processing chamber 310 and the second processing chamber 320, and the at least one first shield device 350 may provide the separation function, particularly a gas separation function. [0052] Figures 4A and 4B show schematic views of a deposition apparatus 400 for deposition of a material on a substrate according to further embodiments described herein. According to some embodiments, the deposition apparatus 400 is configured for depositing two or more different layer stacks, e.g., a first layer stack and a second layer stack with different materials. [0053] The difference between the deposition apparatus 300 of figures 3 A and 3B and the deposition apparatus 400 of figures 4A and 4B lies in the configuration of the at least one first shield device 450 and in the provision of at least one second shield device 460. A description of the features described above with reference to figures 3A and 3B also applies to the corresponding features of the embodiment shown in figures 4A and 4B and is not repeated.

[0054] The disposition apparatus 400 includes the at least one first shield device 450. According to some embodiments, which can be combined with other embodiments described herein, the deposition apparatus 400 includes at least one second shield device 460 configured to be moveable at least between a third position and a fourth position, wherein the at least one second shield device 460 is configured to shield the at least one second deposition source 321 when the at least one second shield device 460 is in the third position. According to some embodiments, which can be combined with other embodiments described herein, the at least one first shield device 450 is provided in the first processing chamber 310, and/or the at least one second shield device 460 is provided in the second processing chamber 320. [0055] In some implementations, the at least one first shield device 450 is configured to shield the at least one first deposition source 311 when the at least one first shield device 450 is in the first position, and is configured to not shield the at least one first deposition source 311 when the at least one first shield device 450 is in the second position. In other words, in the first position the at least one first shield device 450 is positioned between the at least one first deposition source 311 and the substrate support 330 and/or the substrate 340 carried by the substrate support 330 so that a material cannot be deposited on the substrate 340. In the second position the at least one first shield device 450 is not positioned between the at least one first deposition source 311 and the substrate support 330 and/or the substrate 340 carried by the substrate support 330, so that a material can be deposited on the substrate 340.

[0056] In some implementations, the at least one second shield device 460 is configured to shield the at least one second deposition source 311 when the at least one second shield device 460 is in the third position, and is configured to not shield the at least one first deposition source 311 when the at least one second shield device 460 is in the fourth position. In other words, in the third position the at least one second shield device 460 is positioned between the at least one second deposition source 321 and the substrate support 330 and/or the substrate 340 carried by the substrate support 330, so that a material cannot be deposited on the substrate 340. In the fourth position the at least one second shield device 460 is not positioned between the at least one second deposition source 321 and the substrate support 330 and/or the substrate 340 carried by the substrate support 330, so that a material can be deposited on the substrate 340.

[0057] According to some embodiments, which can be combined with other embodiments described herein, the at least one first shield device 450 includes a first roller blind, and/or the at least one second shield device 460 includes a second roller blind. The first roller blind can include one or more first roller blind elements. The one or more first roller blind elements may be moveable with respect to each other. By moving at least one of the one or more first roller blind elements, the at least one first shield device 450 can be moved from the first position into the second position and/or from the second position into the first position. According to some embodiments, which can be combined with other embodiments described herein, the first position may be referred to as a "closed position", i.e., a position in which the at least one first deposition source 311 is shielded, and the second position may be referred to as an "open position", i.e., a position in which the at least one first deposition source 311 is not shielded.

[0058] In some implementations, the second roller blind can include one or more second roller blind elements. The one or more second roller blind elements may be moveable with respect to each other. By moving at least one of the one or more second roller blind elements, the at least one second shield device 460 can be moved from the third position into the fourth position and/or from the fourth position into the third position. According to some embodiments, which can be combined with other embodiments described herein, the third position may be referred to as a "closed position", i.e., a position in which the at least one second deposition source 321 is shielded, and the fourth position may be referred to as an "open position", i.e., a position in which the at least one second deposition source 321 is not shielded.

[0059] As it is shown in figure 4A, the at least one first shield device 450 is in the second position, i.e., in the open position, and the at least one second shield device 460 is in the third position, i.e., in the closed position. In figure 4B, the at least one first shield device 450 is in the first position, i.e., in the closed position, and the at least one second shield device 460 is in the fourth position, i.e., in the open position.

[0060] According to some embodiments, which can be combined with other embodiments described herein, the at least one first shield device 450 is configured as a first gas separation shielding, and/or the at least one second shield device 460 is configured as a second gas separation shielding. As an example, the at least one first shield device 450 and/or the at least one second shield device 460 allows separate regions within the deposition apparatus 400 and/or to provide regions within the deposition apparatus 400 with different partial pressures and/or kind of the process gases. As an example, the deposition apparatus 400 may not include the separation device 360 between the first processing chamber 310 and the second processing chamber 320, and the at least one first shield device 350 and/or the at least one second shield device 460 may provide the separation function, particularly the gas separation function. [0061] The disclosure provides the deposition apparatus, e.g. the deposition apparatus 300 and the deposition apparatus 400, including at least one first shield device, such that one in-line system can provide for two or more layer stacks or layer stack concepts with different materials. [0062] Although in figures 3 and 4 a first processing chamber and a second processing chamber are shown, the present disclosure is not limited to the provision of two processing chambers. According to some embodiments, which can be combined with other embodiments described herein, the deposition apparatus, e.g. the deposition apparatus 300 or the deposition apparatus 400, includes one or more further processing chambers, wherein at least one further deposition source is provided in at least one of the one or more further processing chambers. As an example, any number of processing chambers can be provided, for instance at least 3, specifically at least 10 and more specifically 3 or 12.

[0063] Also the number of shield devices is not limited to one (figure 3A and 3B) or two (figures 4A and 4B). According to some embodiments, which can be combined with other embodiments described herein, the deposition apparatus, e.g. the deposition apparatus 300 or the deposition apparatus 400, includes one or more further shield devices. As an example, the deposition apparatuses according to the embodiments described herein may include any suitable number of shield devices to provide two or more configurations allowing the deposition of different layer stacks or implementing different layer stack concepts. The one or more further shield devices can be configured as any one of the shield devices described with reference to figured 3 and 4.

[0064] According to some embodiments, which can be combined with other embodiments described herein, the deposition apparatus includes one or more storage chambers to store at least one of the shield devices, e.g., the least one first shield device, not used for implementation of a current layer stack concept.

[0065] According to some embodiments, which can be combined with other embodiments described herein, the deposition apparatus further includes a controller configured for controlling a movement of the at least one first shield device 450 between the first position and the second position, and/or configured for controlling a movement of the at least one second shield device 460 between the third position and fourth position, and/or configured for controlling a movement of at least one of the one or more further shield devices.

[0066] The disclosure provides a deposition apparatus including at least one first shield device, the at least one first shield device having for example a shifting register type equipment configuration with movable gas separation units, which can work simultaneously as a gas separation as well and as a protection unit for deposition sources, such that one in-line system can provide for two or more stack concepts with different materials.

[0067] Figures 5A and 5B show schematic views of another deposition apparatus 500 for deposition of a material on a substrate according to embodiments described herein. According to some embodiments, the deposition apparatus 500 is configured for depositing two or more different layer stacks, e.g., a first layer stack and a second layer stack with different materials.

[0068] In figure 5A, the deposition apparatus 500 is in a first configuration for deposition of a first layer stack being e.g. a layer stack with one or more transparent insulating layers and at least one transparent conductive oxide layer (TCO) layer, e.g. an indium tin oxide (ITO) layer (e.g., "invisible ΙΤΟ")· According to some embodiments, the at least one TCO layer can be a structured TCO layer and can be provided by e.g. depositing a TCO layer and patterning the TCO layer in order to provide the structured TCO layer. Alternatively, a mask and/or a photoresist can be provided to deposit the structured TCO layer.

[0069] According to some embodiments, which can be combined with other embodiments described herein, the at least one TCO layer can include at least one of an indium tin oxide (ITO) layer, a doped ITO layer, impurity-doped ZnO, ln₂0₃, Sn0₂ and CdO, ITO (In203:Sn), AZO (ZnO:Al), IZO (ZnO: In), GZO (ZnO:Ga), or multi- component oxides including or consisting of combinations of ZnO, ln₂0₃, SnZnO and Sn0₂, or combinations thereof. In the following, reference is made to ΓΓΟ as an example for the at least one TCO layer.

[0070] As shown in figure 5B, the deposition apparatus 500 is in a second configuration for deposition of the second layer stack including a metal layer stack such as e.g. a Black Metal stack (e.g., for Black Metal Bridges or Black Metal Meshes) and at least one ITO layer as described above. According to some embodiments, by moving one or more shield devices, e.g., one or more of the at least one first shield devices, a configuration of the deposition apparatus 500 can be switched from the first configuration to the second configuration or can be switched from the second configuration to the first configuration.

[0071] Exemplarily, in figures 5 A and 5B the deposition apparatus 500 includes a first portion 510 for deposition of the one or more transparent insulating layers of the first layer stack and a second portion 540 for deposition of the at least one ITO layer and optionally at least one metal layer such as a molybdenum (Mo) layer. The first portion 510 and the second portion 540 can be separated by a separation wall 520. The first portion 510 includes a plurality of first vacuum chambers and the second portion 540 includes a plurality of second vacuum chambers. At least some of the first vacuum chambers and the second vacuum chambers can be configured as processing chambers. According to some implementations, the first vacuum chambers and the second vacuum chambers can be separated from adjacent first vacuum chambers and second vacuum chambers, respectively, by separation devices 590. As an example, the separation device 590 can include a valve having a valve housing and a valve unit. The separation device 590 may be configured as a load lock between adjacent first vacuum chambers and adjacent second vacuum chambers. [0072] According to some embodiments, which can be combined with other embodiments described herein, the first vacuum chambers and the second vacuum chambers may be chambers selected from the group consisting of: a buffer chamber, a heating chamber, a transfer chamber, a cycle-time-adjusting chamber, a deposition chamber, a processing chamber or the like. According to embodiments, which can be combined with other embodiments described herein, a "processing chamber" may be understood as a chamber in which a processing device for processing a substrate is arranged. The processing device may be understood as any device used for processing a substrate. For example, the processing device may include a deposition source for depositing a layer onto the substrate. Accordingly, the vacuum chamber or processing chamber including the e.g. a deposition source assembly may also be referred to as a deposition chamber. The processing chamber may be a chemical vapor deposition (CVD) chamber or a physical vapor deposition (PVD) chamber.

[0073] At least some of the first vacuum chambers and the second vacuum chambers configured as processing chambers can each include at least one deposition source. The deposition sources can for example be rotatable cathodes having targets of the material to be deposited on the substrate. The cathodes can be rotatable cathodes with a magnetron therein. As an example, magnetron sputtering can be conducted for depositing of the layers of the layer stacks, e.g. the first layer stack and the second layer stack. As an example, the cathodes are connected to an AC power supply (not shown), such that the cathodes can be biased in an alternating manner.

[0074] As used herein, "magnetron sputtering" refers to sputtering performed using a magnet assembly, that is, a unit capable of a generating a magnetic field. As an example, such a magnet assembly consists of a permanent magnet. This permanent magnet can be arranged within a rotatable target or coupled to a planar target in a manner such that the free electrons are trapped within the generated magnetic field generated below the rotatable target surface. Such a magnet assembly may also be arranged coupled to a planar cathode.

[0075] Magnetron sputtering can be realized by a double magnetron cathode, i.e. a pair of the deposition sources, such as, but not limited to, a TwinMagTM cathode assembly. Particularly, for MF sputtering e.g. from a silicon target, target assemblies including double cathodes can be applied. According to some embodiments, the deposition sources in a processing chamber may be interchangeable. Accordingly, the deposition sources or targets are changed after the material has been consumed.

[0076] According to some embodiments, layers such as transparent insulating layers can be deposited by sputtering, for example magnetron sputtering, of rotatable cathodes having an AC power supply. As an example, MF sputtering can be applied for depositing the transparent insulating layers. According to some embodiments, sputtering from a silicon target, e.g. a sprayed silicon target, is conducted by MF sputtering, that is middle frequency sputtering. According to embodiments herein, middle frequency is a frequency in the range 5 kHz to 100 kHz, for example, 10 kHz to 50 kHz. [0077] Sputtering from a target for a transparent conductive oxide film such as ITO can be conducted as DC sputtering. The respective deposition sources are connected to a DC power supply (not shown) together with anodes (not shown) collecting electrons during sputtering. According to embodiments, which can be combined with other embodiments described herein, the transparent conductive oxide layers, for example, the ITO layers, can be sputtered by DC sputtering.

[0078] According to some embodiments, the first vacuum chambers of the first portion 510 can include an entry load lock chamber 511, a first processing chamber 512, a second processing chamber 513, a third processing chamber 514, a fourth processing chamber 515, a fifth processing chamber 516, a sixth processing chamber 517 and a seventh processing chamber 518. According to some embodiments, the second vacuum chambers of the second portion 540 can include an eighth processing chamber 541, a ninth processing chamber 542, a tenth processing chamber 543, an eleventh processing chamber 544, a twelfth processing chamber 545, a thirteenth processing chamber 546, a fourteenth processing chamber 547 and an exit load lock chamber 548.

[0079] The deposition apparatus 500 may include further vacuum chambers such as a transfer chamber 530 connecting the first portion 510 and the second portion 540. The transfer chamber 530 may include substrate transport means configured for transferring or transporting the substrate from the first portion 510, particularly from the seventh processing chamber 518, into the second portion 540, and particularly into the eight processing chamber 541. The substrate transport means may include means for turning or rotating the substrate.

[0080] An atmosphere in one or more of the first vacuum chambers, the second vacuum chambers and/or the further vacuum chambers such as the transfer chamber 530 can be individually controlled by generating a technical vacuum, for example with vacuum pumps (not shown) connected to one or more of the first vacuum chambers, the second vacuum chambers and the further vacuum chambers such as the transfer chamber 530. As an example, the atmosphere can be individually controlled by generating a technical vacuum inside at least one of the entry load lock chamber 211, the processing chambers 512-518 and 541-547, the further vacuum chambers such as the transfer chamber 530, and the exit load lock chamber 548, and/or by inserting process gases in deposition regions of at least one of the processing chambers 512-518 and 541-547. The process gas can include inert gases such as argon and/or reactive gases such as oxygen, nitrogen, Hydrogen (H2) and ammonia (NH3), Ozone (03), activated gases or the like.

[0081] A first substrate support 560, e.g. configured for supporting and transporting or conveying the substrate or a first carrier having the substrate disposed thereon, extends through the first portion 510, and a second substrate support 561, e.g. configured for supporting and transporting or conveying the substrate or a second carrier having the substrate disposed thereon, extends through the second portion 540. A transport direction of the substrate (not shown) through the first portion 510 is indicated with arrow 562 and a transport direction of the substrate (not shown) through the second portion 540 is indicated with arrow 563. In the transfer chamber 530, the substrate may be transferred from the first substrate support 560 to the second substrate support 561. The first substrate support 560 and the second substrate support 561 can be connected in the transfer chamber 530, e.g. by the substrate transport means. [0082] In the first portion 510, at least one first deposition source 580, e.g. including a NbOx deposition source, can be provided in the second processing chamber 513, at least one second deposition source 581, e.g. including a MoNb deposition source, can be provided in the third processing chamber 514, at least one third deposition source 582, e.g. including a Si deposition source, can be provided in the fifth processing chamber 516, at least one fourth deposition source 583, e.g. including a Si deposition source, can be provided in the sixth processing chamber 517, and at least one fifth deposition source 584, e.g. including a MoNb deposition source, can be provided in the seventh processing chamber 518.

[0083] In the second portion 540, at least one sixth deposition source 585, e.g. including an ITO deposition source, can be provided in the ninth processing chamber 542, at least one seventh deposition source 586, e.g. including an ΠΌ deposition source, can be provided in the tenth processing chamber 543, at least one eighth deposition source 587, e.g. including an Al deposition source, can be provided in the eleventh processing chamber 544, at least one ninth deposition source 588, e.g. including an Al deposition source, can be provided in the twelfth processing chamber 545, and at least one tenth deposition source 589, e.g. including a Mo deposition source, can be provided in the thirteenth processing chamber 546.

[0084] In this example the first processing chamber 512, the fourth processing chamber 515, the eight processing chamber 541, and the fourteenth processing chamber 547 do each not include a deposition source. However, the present disclosure is not limited thereto and further deposition sources could be provided in the first processing chamber 512, the fourth processing chamber 515, the eight processing chamber 541, and/or the fourteenth processing chamber 547 in order to realize further or different layer stack concepts.

[0085] According to some embodiments one or more of the processing chambers having no deposition source provided therein may be used as storage chambers to store at least one of the shield devices e.g. not used for implementation of a current layer stack concept.

[0086] In some implementations, at least one pressure sensor (not shown) can be provided in at least some of the processing chambers 512-518 and 541-540. The at least one pressure sensor may be configured to measure a (partial) pressure of the process gas. The at least one pressure sensor may particularly be a oxygen pressure sensors or a nitrogen pressure sensor. Some of the layers as described herein can be oxide-layers, nitrite-layers, or oxinitride-layers, and can be deposited by a reactive deposition process where the target material reacts with oxygen and/or nitrogen after the material has been released from the target. By providing the pressure sensors, an atmosphere with an appropriate processing gas and/or the appropriate degree of technical vacuum can be provided in the respective processing chambers, and particularly in the deposition areas of the respective processing chambers.

[0087] According to some embodiments, the process gases can include inert gases such as argon and/or reactive gases such as oxygen, nitrogen, Hydrogen (H2) and ammonia (NH3), Ozone (03), activated gases or the like.

[0088] According to some embodiments, which can be combined with other embodiments described herein, the deposition apparatus 500 includes at least one first shield device 570. The at least one first shield device 570 can be configured as any one of the shield devices described above with reference to figures 3 and 4. [0089] In some embodiments, the at least one first shield device 570 can be provided moveable between at least some of the processing chambers 512-518 and 541-547, similarly to the first shield device shown in figures 3 A and 3B. In other embodiments, at least one shield device could be provided in one or more of the processing chambers 512- 518 and 541-547, similarly to the first shield device and/or the second shield device shown in figures 4A and 4B.

[0090] According to some embodiments, which can be combined with other embodiments described herein, the at least one first shield device 570 is configured as a first gas separation shielding. As an example, the at least one first shield device 570 allows to provide regions within the deposition apparatus 500 with different partial pressures and/or kind of the process gases. As an example, one or more of the separation devices 520 can be replaced by the at least one first shield device 570 providing the separation function, particularly a gas separation function.

[0091] In the example of figures 5 A and 5B a plurality of shield devices such as the first shield device and the second shield device described above are provided. In the first configuration of figure 5 A, the at least one second deposition source 581, the at least one fifth deposition source 584, the at least one eighth deposition source 587 and the at least one ninth deposition source 588 are each shielded by a respective first shield device 570.

[0092] The deposition apparatus 500 with the first configuration shown in figure 5A can be configured for deposition of the first layer stack including the transparent insulating layers such as Nb₂0₅ and Si0₂ layers, the at least one ITO layer and optionally the at least one metal layer such as a Mo layer. For depositing the first layer stack, the substrate to be processed can be inserted into the entry load lock chamber 511 and can be transported through the processing chambers 512-518 to deposit the transparent insulating layers such as Nb₂C"5 and Si0₂ layers on the substrate. Afterwards, the substrate enters the transfer chamber 530 where it is transferred from the first substrate support 560 to the second substrate support 561. Subsequently, for depositing the at least one ITO layer and optionally the at least one metal layer such as the Mo layer, the substrate having the transparent insulating layers such as Nb₂0₅ and Si0₂ layers processed thereon is inserted into the second portion 540, particularly the eight processing chamber 541. The substrate is transported through the processing chambers 541-547 to deposit the at least one ITO layer and optionally the at least one metal layer such as the Mo layer. The substrate having the first layer stack including the transparent insulating layers such as Ν¾₂0₅ and Si0₂ layers, the at least one ITO layer and the at least one metal layer processed thereon exits the deposition apparatus 500 through the exit load lock chamber 548. [0093] According to some embodiments, the first configuration can be changed into the second configuration as shown in figure 5B by moving one or more of the shield devices such as the first shield device and/or the second shield device. Such a change between the first configuration and the second configuration can for example be achieved by shifting one or more of the shield devices, which can be configured as gas separation shieldings, by two segments of the deposition apparatus, wherein each segments may correspond to one of the first vacuum chambers and/or the second vacuum chambers, and may particularly correspond to one of the processing chambers.

[0094] In the second configuration of figure 5B, the at least one first deposition source 580, the at least one third deposition source 582, the at least one fourth deposition source 583, the at least one sixth deposition source 585 and the at least one seventh deposition source 586 are shielded by respective shield devices such as the first shield device and the second shield device described above.

[0095] The deposition apparatus 500 with the second configuration shown in figure 5B can be configured for deposition of the second layer stack including a metal layer stack such as e.g. a Black Metal stack (e.g., for Black Metal Bridges or Black Metal Meshes) and optionally at least one TCO layer such as an indium tin oxide (ΓΓΟ) layer.

[0096] For depositing the second layer stack, the substrate to be processed can be inserted into the entry load lock chamber 511 and can be transported through the processing chambers 512-518 to deposit at least one first metal layer of the metal layer stack, such as a MoNb layer, on the substrate. Afterwards, the substrate enters the transfer chamber 530 where it is transferred from the first substrate support 560 to the second substrate support 561. Subsequently, the substrate having the at least one first metal layer processed thereon is inserted into the second portion 540, particularly the eight processing chamber 541. The substrate is transported through the processing chambers 541-547 to deposit at least one second metal layer of the metal layer stack, such as an Al layer, and at least one third metal layer of the metal layer stack, such as a Mo layer. The substrate having the second layer stack processed thereon exits the deposition apparatus 500 through the exit load lock chamber 548.

[0097] According to another aspect of the present disclosure, a deposition apparatus for deposition of one of a first layer stack and a second layer stack on a substrate is provided, wherein the second layer stack is different from the first layer stack. The deposition apparatus includes a first processing chamber and a second processing chamber; at least one first deposition source in the first processing chamber and at least one second deposition source in the second processing chamber; at least one first shield device in the first processing chamber, wherein the at least one first shield device is configured to be moveable at least between a first position and a second position, wherein the at least one first shield device is configured to shield the at least one first deposition source when the at least one first shield device is in the first position; and at least one second shield device in the second processing chamber, wherein the at least one second shield device is configured to be moveable at least between a third position and a fourth position, wherein the at least one second shield device is configured to shield the at least one second deposition source when the at least one second shield device is in the third position. The at least one first shield device is configured as a first gas separation shielding, and/or wherein the at least one second shield device is configured as a second gas separation shielding. [0098] Figure 6 shows a flow chart of a method 600 for deposition of a material on a substrate according to embodiments described herein.

[0099] According to some embodiments, the method 600 includes moving at least one first shield device from a first position into a second position to shield or un-shield one of two or more deposition sources (block 610); and depositing a first layer stack on the substrate (block 620). According to some embodiments, which can be combined with other embodiments described herein, the method further includes moving the at least one first shield device from the second position into the first position to un-shield or shield the one of the two or more deposition sources (block 630); and depositing a second layer stack on another substrate, wherein the second layer stack is different from the first layer stack (block 640). The first layer stack and the second layer stack may at least partially include different materials. [00100] According to embodiments described herein, the method for depositing a material on a substrate can be conducted by means of computer programs, software, computer software products and the interrelated controllers, which can have a CPU, a memory, a user interface, and input and output means being in communication with the corresponding components of the apparatus for processing a large area substrate.

[00101] The disclosure provides a deposition apparatus including at least one first shield device, the at least one first shield device having for example a shifting register type equipment configuration with movable gas separation units, which can work simultaneously as a gas separation as well as a protection unit for deposition sources, such that one in-line system can provide for two or more stack concepts with different materials.

[00102] In the given example for the touch panel market, the system can be shifted / switched from one configuration providing for a 3 layer stack to produce ITO with pattern invisibility ("Invisible ITO") to another configuration providing a conductive anti- reflective coating followed by a metal ("Black Metal"-stack). The other configuration can be used for low-reflective invisible "Black Metal Bridges (OGS ("one glass solution") / TOL ("touch on lens") concept for out-cell touch screen panels (TSCs)), contact out metal leads for on-cell type TSPs, and Metal Mesh based TSP approaches. Generally, for all sequentially placed processing chambers with adjacent processes which have space consuming gas separations, this concept can be beneficial, since a space for the deposition apparatus is reduced, e.g., about 45%. Also switches can be used for adapting or changing the configuration of the deposition apparatus, and a number of power supplies is reduced, i.e., no additional power supplies need to be provided.

[00103] According to the present disclosure, the deposition apparatus is multi-functional and only one deposition apparatus is provided for multiple stack concepts. The deposition apparatus is simple and allows a fast switching between stacks to be deposited. The deposition apparatus can support PCT ("projected capacitive touch") touch screen panel technology evolution from invisible ΓΓΟ (also including a Black Metal Bridge) to Black Metal Mesh. The present embodiments can be applied for systems providing for a set of various layers of different material, e.g. different metals and metal oxides. The present embodiments can also be applied or adjusted to different platforms where adjacent processing chambers have to be separated by gas separation units. [00104] While the foregoing is directed to embodiments of the disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A deposition apparatus for deposition of a material on a substrate, comprising: a first processing chamber and a second processing chamber; at least one first deposition source in the first processing chamber and at least one second deposition source in the second processing chamber; and at least one first shield device, wherein the at least one first shield device is configured to be moveable at least between a first position and a second position, wherein the at least one first shield device is configured to shield the at least one first deposition source when the at least one first shield device is in the first position, and wherein the at least one first shield device is configured to be moveable at least between the first processing chamber and the second processing chamber.

2. The deposition apparatus of claim 1, wherein the at least one first shield device is configured to shield the at least one second deposition source when the at least one first shield device is in the second position.

3. The deposition apparatus of claim 1 or 2, wherein the at least one first shield device is configured as a first gas separation shielding.

4. A deposition apparatus for deposition of a material on a substrate, comprising: a first processing chamber and a second processing chamber; at least one first deposition source in the first processing chamber and at least one second deposition source in the second processing chamber; at least one first shield device, wherein the at least one first shield device is configured to be moveable at least between a first position and a second position, wherein the at least one first shield device is configured to shield the at least one first deposition source when the at least one first shield device is in the first position; and at least one second shield device configured to be moveable at least between a third position and a fourth position, wherein the at least one second shield device is configured to shield the at least one second deposition source when the at least one second shield device is in the third position.

5. The deposition apparatus of claim 4, wherein the at least one first shield device is provided in the first processing chamber, and/or wherein the at least one second shield device is provided in the second processing chamber.

6. The deposition apparatus of claim 4 or 5, wherein the at least one first shield device includes a first roller blind, and/or wherein the at least one second shield device includes a second roller blind.

7. The deposition apparatus of one of claims 4 to 6, wherein the at least one first shield device is configured as a first gas separation shielding, and/or wherein the at least one second shield device is configured as a second gas separation shielding.

8. The deposition apparatus of one of claims 1 to 7, further including a substrate support extending at least through the first processing chamber and the second processing chamber, wherein, in the first position, the at least one first shield device is at least partially positioned between the at least one first deposition source and the substrate support.

9. The deposition apparatus of one of claims 1 to 8, further including one or more further processing chambers, wherein at least one further deposition source is provided in at least one of the one or more further processing chambers.

10. The deposition apparatus of one of claims 1 to 9, further including one or more further shield devices.

11. The deposition apparatus of one of claims 1 to 10, the deposition apparatus being configured to deposit at least a first layer stack and a second layer stack, particularly wherein the second layer stack is different from the first layer stack.

12. The deposition apparatus of claim 11, the deposition apparatus being configured to deposit the first layer stack including at least one of indium tin oxide (ΓΓΟ), Nb_yO_x, Nb₂Os, Si0₂, Ti0₂ and/or a metal, particularly Al, Mo and Cu, and/or the deposition apparatus is configured to deposit the second layer stack including at least one of MoNbO_xN_y, Al, AINd, MoNb and one or more alloys of Mo and/or Al.

13. A Method for depositing a material on a substrate, comprising: moving at least one first shield device from a first position into a second position to shield or un-shield one of two or more deposition sources; depositing a first layer stack on the substrate; moving the at least one first shield device from the second position into the first position to un-shield or shield the one of the two or more deposition sources; and depositing a second layer stack on another substrate.

14. The method of claim 13, wherein the second layer stack is different from the first layer stack.

15. A deposition apparatus for deposition of one of a first layer stack and a second layer stack on a substrate, wherein the second layer stack is different from the first layer stack, the deposition apparatus comprising: a first processing chamber and a second processing chamber; at least one first deposition source in the first processing chamber and at least one second deposition source in the second processing chamber; at least one first shield device in the first processing chamber, wherein the at least one first shield device is configured to be moveable at least between a first position and a second position, wherein the at least one first shield device is configured to shield the at least one first deposition source when the at least one first shield device is in the first position; and at least one second shield device in the second processing chamber, wherein the at least one second shield device is configured to be moveable at least between a third position and a fourth position, wherein the at least one second shield device is configured to shield the at least one second deposition source when the at least one second shield device is in the third position, wherein the at least one first shield device is configured as a first gas separation shielding, and/or wherein the at least one second shield device is configured as a second gas separation shielding.