WO2015172585A1 - Détecteur infrarouge ferroélectrique de relaxeur pyroélectrique - Google Patents

Détecteur infrarouge ferroélectrique de relaxeur pyroélectrique Download PDF

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WO2015172585A1
WO2015172585A1 PCT/CN2015/071792 CN2015071792W WO2015172585A1 WO 2015172585 A1 WO2015172585 A1 WO 2015172585A1 CN 2015071792 W CN2015071792 W CN 2015071792W WO 2015172585 A1 WO2015172585 A1 WO 2015172585A1
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electrode
pyroelectric
single crystal
sensitive element
relaxation ferroelectric
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PCT/CN2015/071792
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Chinese (zh)
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罗豪甦
许晴
赵祥永
狄文宁
焦杰
李龙
杨林荣
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上海硅酸盐研究所中试基地
中国科学院上海硅酸盐研究所
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point

Definitions

  • the invention relates to the field of microelectronic chips, and in particular to a pyroelectric relaxation ferroelectric infrared detector.
  • Infrared detectors are mainly divided into photon type infrared detectors and thermal infrared detectors.
  • the common photon-type infrared detector mainly uses a narrow band gap semiconductor material represented by mercury cadmium telluride and an optoelectronic semiconductor material represented by gallium arsenide.
  • semiconductor infrared devices generally require low-temperature refrigeration, which is bulky, costly, and consumes a lot of power.
  • the pyroelectric relaxation ferroelectric infrared detector developed by the pyroelectric effect of the material has a flat spectral response in the ultraviolet, visible, and infrared bands, and has no need for refrigeration, low power consumption, and low noise bandwidth.
  • the compact structure, portability and low cost have become one of the most eye-catching focuses in the field of infrared technology.
  • pyroelectric relaxation ferroelectric infrared detectors are rapidly expanding from the military market to the civilian market, especially in human body detection. Fire warning, gas analysis, infrared spectrometer and infrared thermal imaging have played an important role, while reflecting huge market potential.
  • the materials currently used for pyroelectric relaxation ferroelectric infrared detectors mainly include lead zirconate titanate (PZT), barium titanate (BST) and lead citrate (PST), etc., for pyroelectric unit detectors.
  • the materials are mainly limited to lithium tantalate (LiTaO3), triglyceride sulfate (TGS) and the like.
  • these traditional materials have the disadvantages of low pyroelectric coefficient, large dielectric loss and unstable physical properties, and it is difficult to meet the application requirements of high-performance pyroelectric relaxation ferroelectric infrared detectors and their extended products.
  • the detection level of the more mature commercial LiTaO3 infrared detector is only 1 ⁇ 108cmHz1/2/W to 4 ⁇ 108. CmHz1/2/W. Therefore, at the same time, overcoming the shortcomings of the above materials, exploring new pyroelectric materials with high detection value has become an urgent need for the development of uncooled infrared devices.
  • Mn-doped PMNT single crystal in which the composition is Mn-doped PMN-0.26PT single crystal, pyroelectric
  • Mn Mn-doped PMN-0.26PT single crystal
  • pyroelectric pyroelectric
  • the processing method of the infrared detecting sensitive element of the material is different from the conventional pyroelectric material, especially when the thinning process is performed to improve the infrared detecting performance, the introduced size effect and surface damage effect cause single crystal reduction.
  • the performance of the post-thinness is seriously degraded, and the problem has not been solved so far, making the new pyroelectric material difficult to be practically used in an infrared device (Paper Literature 1).
  • the PMN single crystal has a low Curie temperature and has certain application limitations.
  • chemical composition control is used to prepare a high-Curie temperature ternary system of bismuth indium magnesium titanate (1).
  • -xy)Pb(In1/2Nb1/2)O3-yPb(Mg1/3Nb2/3)O3-xPbTiO3 (referred to as PIMNT or PIN-PMN-PT) single crystal has been paid attention by researchers, but due to ternary system single crystal
  • the composition of the complex, high thermal and electrical properties, high Curie temperature and low dielectric constant of the composition of the difficulty of regulation, so the performance optimization of the crystal has not yet clear research results and public reports (paper 2).
  • the sensitive components of the traditional pyroelectric relaxation ferroelectric infrared detector are generally full electrodes, and the area is fixed. It is not easy to reduce the electrode area to regulate the electrical parameters of the sensitive components for other purposes. This is achieved, and therefore improvements in the adjustment of the electrode structure are also required.
  • Patent literature
  • Patent Document 1 Chinese patent CN 1080777C;
  • Patent Document 2 Chinese Patent CN100429334C.
  • the conventional pyroelectric infrared sensor usually adopts a full-electrode configuration on the sensitive element chip.
  • FIG. 1 it is a conventional electrode structure in the prior art, and its area is fixed. If it is desired to reduce the electrode area to regulate the sensitive element, The electrical parameters of the sensitive components are not easily achievable for other uses. In addition, especially for very thin sensitive components, the dielectric noise of the device prepared is too high, and the detector's specific detection rate is low.
  • the present invention provides a novel pyroelectric relaxation ferroelectric infrared detector, thereby solving the problems in the prior art.
  • the invention discloses a pyroelectric relaxation ferroelectric infrared detector, the detector comprising: a base of the pin; a package with one or more windows that is packaged with the base to form a receiving space; one or more pyroelectric relaxations that are polarized in the receiving space a sensitive elementary chip composed of a single crystal sensitive element of a ferroelectric ferroelectric; an electrode respectively disposed on an upper surface and a lower surface of the pyroelectric relaxation ferroelectric single crystal sensitive element; covering the pyroelectric relaxation ferroelectric single crystal An absorbing layer on the upper surface of the sensitive element; a support for supporting the pyroelectric relaxation ferroelectric single crystal sensitive element; and an amplifying circuit using a voltage mode or a current mode, wherein the upper electrode disposed on the upper surface is The single electrode, the lower electrode disposed on the lower surface includes left and right electrodes separated from each other, and the left and right electrodes are not connected to each other to form the lower electrode into a divided electrode.
  • the distance between the left electrode and the right electrode is between 0.5 mm and 1 mm.
  • the distance between the left electrode and the right electrode is 0.5 mm.
  • the upper electrode is circular; the left and right electrodes are rectangular.
  • the spacing between the rectangular left electrode and the right electrode is equal.
  • the left and right electrodes are symmetric with a diameter of the circular upper electrode.
  • the material of the pyroelectric relaxation ferroelectric single crystal sensitive element is one or more of the following materials:
  • the hexagonal phase Mn is doped with (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 single crystal, wherein 0.26 ⁇ x ⁇ 0.29 and the crystallographic direction is [111],
  • the hexagonal phase Mn is doped with (1-xy)Pb(In1/2Nb1/2)O3-yPb(Mg1/3Nb2/3)O3-xPbTiO3, where 0.15 ⁇ 1-xy ⁇ 0.38, 0.36 ⁇ y ⁇ 0.57,0.26 ⁇ x ⁇ 0.30, and the crystallographic direction is [111];
  • the absorbing layer is formulated by multi-walled carbon nanotubes, nano-ferric oxide or a mixture of nano-carbon powder and alcohol, and covers the upper surface by intermittent multiple spraying, the absorbing layer
  • the infrared absorption rate is ⁇ 90%; the stent adopts a fine, low thermal conductivity alumina ceramic support, which is supported at the center of the pyroelectric relaxation ferroelectric single crystal sensitive element to achieve infrared detection sensitivity The heat of the component is suspended.
  • the matching resistance RG of the voltage mode amplifying circuit is reduced to be much smaller than 100 G
  • the feedback capacitance Cf of the current mode amplifying circuit is ⁇ 10 pF
  • the feedback resistance Rf is reduced to be much smaller than 100 G.
  • Pyroelectric relaxation ferroelectric infrared detector has ultra-high response rate, low noise and high ratio detection rate
  • the dielectric noise of the device prepared by the sensitive element is reduced, and the specific detection rate of the detector prepared by the sensitive element chip is improved;
  • the split electrode can be polarized at high temperature.
  • FIG. 1 is a schematic structural view of a conventional electrode on a sensitive element chip in the prior art
  • FIG. 2 is a schematic structural view of an electrode on a sensitive element chip according to an embodiment of the present invention
  • FIG. 3 is a schematic view showing a comparison of pyroelectric coefficients when the left electrode and the right electrode are at different intervals in the present invention
  • FIG. 4 is a schematic view showing a comparison of capacitance and dielectric loss when the left electrode and the right electrode are at different intervals in the present invention
  • FIG. 5 is a schematic view showing a comparison of response rates of different electrode structures of the present invention and the prior art
  • Fig. 6 is a schematic view showing the comparison of the detection ratios of the electrode structures of the present invention and the prior art.
  • a pyroelectric relaxation ferroelectric infrared detector comprising: a base provided with a pin; a package with one or more windows encased with the base to form a receiving space; disposed in the receiving space a sensitive element chip composed of one or more pyroelectric relaxation ferroelectric single crystal sensitive elements subjected to polarization treatment; respectively disposed on the upper surface and the lower surface of the pyroelectric relaxation ferroelectric single crystal sensitive element An electrode; an absorption layer covering the upper surface of the pyroelectric relaxation ferroelectric single crystal sensitive element; a support for supporting the pyroelectric relaxation ferroelectric single crystal sensitive element; and adopting a voltage mode or a current mode Amplifying circuit.
  • the sensitive element chip comprises one or more pyroelectric relaxation ferroelectric single crystal sensitive elements, and the upper and lower surfaces are respectively provided with electrodes.
  • the electrodes disposed on the upper and lower surfaces are all electrodes, and in the present invention, the upper electrode disposed on the upper surface is a single electrode, and the electrode structure disposed on the lower surface is changed from the entire electrode to each other.
  • the separated left and right electrodes as the name suggests, the left and right electrodes are two separate electrodes arranged at two places on the lower surface, which are separated from each other and are not electrically connected or connected, so that the lower electrode on the lower surface is formed. It is a divided electrode.
  • FIG. 4 are schematic diagrams showing the comparison of the pyroelectric coefficient when the left electrode and the right electrode are at different intervals, and the capacitance and dielectric loss when the left electrode and the right electrode are at different intervals.
  • the abscissa is the distance l between the left and right electrodes
  • the ordinate is the pyroelectric coefficient p. It can be clearly seen from the graph shown in the experiment that the distance between the left electrode and the right electrode is 0.5 mm.
  • the pyroelectric coefficient p When the distance is 1mm, the pyroelectric coefficient p is about 14 ⁇ 10 -4 C/m 2 K, and when the spacing l is 0.1 mm, the pyroelectric coefficient is about 6 ⁇ 10 -4 C/m 2 K, and the spacing is l. At 1.5 mm, the pyroelectric coefficient is about 8 ⁇ 10 -4 C/m 2 K, so that the distance l between the left electrode and the right electrode is significantly higher than the pitch l at 0-0.5 mm and 1 between 0.5 mm and 1 mm. When the pyroelectric coefficient p is between -1.5 mm, it is preferable that the pyroelectric coefficient is large when the pitch l is between 0.5 mm and 1 mm, and the polarization of the left and right electrodes is relatively complete.
  • the abscissa is still the spacing l
  • the left ordinate represents the sensitive element capacitance
  • the right ordinate represents the dielectric loss
  • the square point coordinates in Figure 3 represent the sensitive element capacitance
  • the dot coordinates represent the dielectric loss.
  • the pitch l is 0.5 mm
  • the sensitive element capacitance is only about 200 pF
  • the dielectric loss is about 5 ⁇ 10 -4 , which is other values such as 0.1 mm compared to the pitch l.
  • the product of the sensitive element capacitance and the dielectric loss is the smallest, that is, the dielectric noise is the smallest. Therefore, most preferably, the distance between the left electrode and the right electrode is 0.5 mm.
  • the structure of the upper electrode is circular, while the left and right electrodes are rectangular, and the left and right electrodes are the same size.
  • the upper surface does not need to be taken out of the upper electrode, and all of them can be used for absorbing infrared light, which increases the absorption efficiency of infrared light, and reduces the capacitance of the sensitive element, which is greatly shortened, while the pyroelectric coefficient remains unchanged.
  • the response time of the detector provided with the sensitive element chip.
  • the pitch of the left and right electrodes of the rectangle is constant, that is, one side of the left and right electrodes of the rectangle is parallel, or the left and right electrodes are symmetric with respect to a diameter of a circular upper electrode, and the regular and symmetrical structure can ensure the polarization effect. Easy to assemble and manufacture.
  • FIG. 5 and FIG. 6, respectively, the schematic diagrams of the comparison of the response rate and the specific detection rate under different electrode structures of the present invention and the prior art are shown.
  • the abscissa represents the frequency f
  • the ordinate represents the response rate R v
  • the square point coordinates represent the response rate R v of the conventional electrode structure in the prior art
  • the dot coordinates represent the distributed electrode structure in the present invention.
  • the response rate R v it is apparent that the distributed electrode structure is nearly four times more efficient than the prior art detectors at the same frequency f. It is precisely because of the use of the split structure that the relative dielectric constant is greatly reduced, resulting in an effect. Referring again to FIG.
  • the abscissa represents the frequency f
  • the ordinate represents the specific detection rate D *
  • the square point coordinates represent the specific detection rate D * of the conventional motor structure in the prior art
  • the dot coordinates represent the distributed electrode of the present invention.
  • the specific detection rate D * under the structure from the detection ratio, the detection ratio of the detector using the distributed electrode structure is about 1.5 times higher than that of the conventional detector of the prior art at 10 Hz, and As the frequency continues to increase, the difference between the two is greater than the detection rate, and the detection ratio of the detector under the distributed electrode structure is always at a high level. It is precisely because of the use of the split structure, the dielectric noise is greatly reduced, and the effect is brought about.
  • the dielectric properties of the materials involved in the examples were measured using an Agilent Model 4294A Impedance Analyzer (Agilent Technologies, Inc.) and approximated from a plate capacitor; The pyroelectric coefficient after single crystal polarization is measured by a dynamic pyroelectric coefficient measurement system.
  • the AC drive temperature range is 1 ° C and the frequency is 45 mHz;
  • the single crystal sensitive element chip is first deposited by magnetron sputtering; then the single crystal sensitive element is polarized; the response rate of the pyroelectric detector is measured by the black body infrared response test system, device noise
  • the Agilent 35670 A Dynamic Signal Analyzer (Agilent Technologies, Inc.) measured the detection rate based on the theoretical formula of the blackbody detection rate, calculated from the measured response rate and noise.
  • a 1 mol% Mn doped 0.71 Pb (Mg 1/3 Nb 2/3 ) O 3 -0.29 PbTiO 3 single crystal sensitive element was prepared with a crystallographic orientation ⁇ 111>, a size of 20 ⁇ 20 mm 2 and a thickness of 20 ⁇ . 1m.
  • the properties of the sputtered heterogeneous electrode after polarization are as follows: the Curie temperature is 135 ° C, the tripartite-tetragonal phase transition temperature is 108 ° C, the dielectric constant r ⁇ 750, and the pyroelectric coefficient p ⁇ 12.0 ⁇ 10 -4 C / m 2 K.
  • the 0.71Pb (Mg 1/3 Nb 2/3 )O 3 -0.29PbTiO 3 pyroelectric relaxation ferroelectric single crystal sensitive element was subjected to chemical mechanical thinning polishing technology to reduce the relaxation ferroelectric single crystal.
  • a large-size (20 ⁇ 20mm 2 ) single crystal sensitive element is prepared, and the thickness of the single crystal sensitive element can be controlled below 20m, and then cut into small pieces by using a dicing machine as needed to prepare a pyroelectric detector sensitive element chip. . Due to the action of chemical mechanical polishing, the surface stress and damage layer are introduced.
  • the detection performance of the single crystal detector therefore, through the post-treatment process technology adopted by the present invention, while obtaining extremely thin single crystal sensitive elements, it also minimizes surface damage and defects on the pyroelectric and dielectric properties of the single crystal sensitive element.
  • the effect of performance enables the preparation of high performance, high quality single crystal sensitive elements.
  • a HF:NH 4 F:H 2 O corrosion inhibitor with a ratio of 8.3:33:58.7 was used to wet-etch the surface of the prepared Mn-doped PMNT single crystal sensitive element. It can be concluded that the corrosion rate of the etchant in the ratio to the Mn-doped PMNT single crystal is about 20.8 nm/min.
  • the pyroelectric coefficient increases with the increase of corrosion time, then gradually increases, and then the plateau tends to be stable; the dielectric loss increases first and then increases with the increase of corrosion time. This shows that wet etching can optimize the pyroelectric coefficient of the material to some extent, and the corrosion time is controlled to 15-20 minutes to effectively reduce the dielectric loss of the material.
  • the etched single crystal sensitive element is annealed to further remove residual mechanical stress on the surface and internal defects of the single crystal.
  • the annealing temperature was 500 ° C
  • the annealing atmosphere was oxygen (oxygen-rich atmosphere)
  • the annealing time was 10 hours.
  • the treated 1 mol% Mn doped 0.71 Pb (Mg 1/3 Nb 2/3 ) O 3 -0.29 PbTiO 3 single crystal sensitive element was placed in an electrode mask, and the distributed electrode was magnetron sputtered, and the lower surface was splashed.
  • the Ni-Cr/Au electrode was deposited, the electrode area was 0.5 ⁇ 2 mm 2 , the pitch was 0.1 mm, 0.5 mm, 1 mm and 1.5 mm, respectively; the upper surface Ni-Cr electrode was a ⁇ 2.5 mm round electrode.
  • the electrodes at both ends of the sensitive element are polarized at 1.25kV/mm and -1.25kV/mm, respectively, forming reverse polarization, including: infrared absorption black layer, Ni-Cr electrode, pyroelectric material, Ni-Cr/Au electrode , P represents the polarization orientation.
  • the two sensitive electrodes of the sensitive element are led out by the gold wire, and the voltage mode amplifying circuit composed of the field effect transistor and the 20G ⁇ resistor is packaged in the TO39 pipe socket (Shanghai Kefa Precision Alloy Material Sales Co., Ltd.).
  • a multi-walled carbon nanotube and an alcohol mixture are sprayed on the surface of the above sensitive element chip to prepare an absorption layer, thereby obtaining a high-frequency pyroelectric relaxation ferroelectric infrared detector.
  • the performance of the detector was characterized by a black body infrared response test system.
  • Figure 8 shows the frequency response of the 20m high-frequency pyroelectric relaxation ferroelectric infrared detector based on the detection rate in the voltage mode prepared by the electrode structure. The specific detection rate at the electrode spacing of 0.5mm and 10Hz It is 1.49 ⁇ 10 9 cm Hz 1/2 /W.
  • the detection performance is better than the 20m Mn doped PMNT single crystal sensitive element detector in the above voltage mode, and maintains a high specific detection rate in the case of high frequency (100Hz), and is significantly better than the current commercial LiTaO 3 infrared. Detectors to meet the needs of higher frequency use.
  • the upper surface of the sensitive element of the pyroelectric detector of the structure does not need to take out the electrode, and all of them can be used for absorbing infrared light, thereby increasing the absorption efficiency of the infrared light; in addition, the structure is greatly maintained under the condition that the pyroelectric coefficient remains substantially unchanged.
  • the capacitance of the sensitive element is reduced, that is, the equivalent dielectric constant of the sensitive element is reduced, so that the dielectric noise is one order of magnitude smaller than the resistance noise, and the advantage of relaxing the high pyroelectric coefficient of the ferroelectric single crystal is simultaneously reduced.
  • the disadvantage of its high dielectric constant is reduced, and the specific detection rate of the detector is improved to some extent, and the higher specific detection rate is maintained at a higher frequency.
  • the structure provides a new pyroelectric detector structure that is easy to miniaturize and integrate, meeting the requirements of modern detectors with low cost, low power consumption, and compatibility with integrated circuits.

Abstract

L'invention concerne un détecteur infrarouge ferroélectrique de relaxeur pyroélectrique. Le détecteur selon l'invention comprend : une base pourvue d'une tige; un boîtier comportant au moins une fenêtre, le boîtier étant incorporé à la base pour former un espace de réception; une puce à élément sensible disposée dans l'espace de réception; des électrodes disposées respectivement sur une surface supérieure et une surface inférieure d'un élément sensible à cristal unique ferroélectrique de relaxeur pyroélectrique; une couche d'absorption recouvrant la surface supérieure de l'élément sensible à cristal unique; un cadre soutenant l'élément sensible à cristal unique; et un circuit d'amplification mettant en oeuvre un mode tension ou un mode courant. L'électrode supérieure disposée sur la surface supérieure est une électrode unique et l'électrode inférieure disposée sur la surface inférieure comprend une électrode gauche et une électrode droite séparées l'une de l'autre. L'électrode gauche et l'électrode droite ne sont pas reliées l'une à l'autre pour former l'électrode inférieure qui se présente comme une électrode divisée. Ainsi, le bruit diélectrique de préparation de dispositif est réduit et la vitesse de réaction ainsi que la détectivité spécifique du détecteur sont accrues.
PCT/CN2015/071792 2014-05-12 2015-01-29 Détecteur infrarouge ferroélectrique de relaxeur pyroélectrique WO2015172585A1 (fr)

Applications Claiming Priority (4)

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CN201410199521.4 2014-05-12
CN201410199521.4A CN103943771A (zh) 2014-05-12 2014-05-12 一种弛豫铁电单晶热释电红外探测器及其制备方法
PCT/CN2014/083193 WO2015172434A1 (fr) 2014-05-12 2014-07-29 Élément sensible monocristallin pyroélectrique, son procédé de préparation, et détecteur à infrarouge pyroélectrique comprenant un élément sensible monocristallin pyroélectrique
CNPCT/CN2014/083193 2014-07-29

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PCT/CN2015/071796 WO2015172589A1 (fr) 2014-05-12 2015-01-29 Procédé de post-traitement pour monocristal ferroélectrique, à relaxation et pyroélectrique
PCT/CN2015/071795 WO2015172588A1 (fr) 2014-05-12 2015-01-29 Procédé d'amincissement pour monocristal ferroélectrique à relaxation et pyroélectrique
PCT/CN2015/071792 WO2015172585A1 (fr) 2014-05-12 2015-01-29 Détecteur infrarouge ferroélectrique de relaxeur pyroélectrique
PCT/CN2015/071794 WO2015172587A1 (fr) 2014-05-12 2015-01-29 Procédé de polarisation pour puce d'élément sensible
PCT/CN2015/071797 WO2015172590A1 (fr) 2014-05-12 2015-01-29 Détecteur infrarouge à monocristal ferroélectrique relaxeur pyroélectrique
PCT/CN2015/071793 WO2015172586A1 (fr) 2014-05-12 2015-01-29 Puce d'élément sensible
PCT/CN2015/071791 WO2016015462A1 (fr) 2014-05-12 2015-01-29 Matériau monocristallin tétragonal relaxeur ferroélectrique-pyroélectrique et son procédé de préparation

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PCT/CN2015/071796 WO2015172589A1 (fr) 2014-05-12 2015-01-29 Procédé de post-traitement pour monocristal ferroélectrique, à relaxation et pyroélectrique
PCT/CN2015/071795 WO2015172588A1 (fr) 2014-05-12 2015-01-29 Procédé d'amincissement pour monocristal ferroélectrique à relaxation et pyroélectrique

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PCT/CN2015/071793 WO2015172586A1 (fr) 2014-05-12 2015-01-29 Puce d'élément sensible
PCT/CN2015/071791 WO2016015462A1 (fr) 2014-05-12 2015-01-29 Matériau monocristallin tétragonal relaxeur ferroélectrique-pyroélectrique et son procédé de préparation

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