WO2015165167A1 - 基板蒸镀装置和蒸镀方法 - Google Patents
基板蒸镀装置和蒸镀方法 Download PDFInfo
- Publication number
- WO2015165167A1 WO2015165167A1 PCT/CN2014/084186 CN2014084186W WO2015165167A1 WO 2015165167 A1 WO2015165167 A1 WO 2015165167A1 CN 2014084186 W CN2014084186 W CN 2014084186W WO 2015165167 A1 WO2015165167 A1 WO 2015165167A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- evaporation source
- evaporation
- axis
- movement
- Prior art date
Links
- 238000001704 evaporation Methods 0.000 title claims abstract description 151
- 239000000758 substrate Substances 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims abstract description 15
- 230000008020 evaporation Effects 0.000 claims abstract description 130
- 230000033001 locomotion Effects 0.000 claims description 57
- 238000009826 distribution Methods 0.000 claims description 26
- 238000002347 injection Methods 0.000 claims description 18
- 239000007924 injection Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 36
- 238000007740 vapor deposition Methods 0.000 description 17
- 239000011521 glass Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000005391 art glass Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
Definitions
- the present invention relates to the field of vapor deposition technology, and in particular to a substrate evaporation apparatus and a vapor deposition method.
- OLED devices full name: Organic Light-Emitting Diode, Chinese name: organic light-emitting diode
- evaporation is a key process, and OLED devices need to vaporize a photovoltaic film layer (metal material) and an organic film on a glass substrate. .
- the evaporation source mainly has two kinds of evaporation sources and line evaporation sources. Since the temperature required for cathode vapor deposition of OLED devices is high, the industry generally uses a point evaporation source for evaporation. As shown in FIG. 1, in the evaporation process, the evaporation source 1 is placed in the upper open casing 2, the glass substrate 3 is placed on the upper part of the evaporation source, and the evaporation source 1 is fixed, according to the ion emission cosine law, If the glass substrate is relatively immobile, the substrate film after vapor deposition from the evaporation source is thick and thin in the middle. If the glass substrate moves simultaneously during the evaporation process, the thickness of the deposited film may be intermediate. Thin, peripheral thickness or irregular thickness distribution.
- the glass substrate which is vapor-deposited by a point evaporation source has a poor uniformity of film thickness, which seriously affects the display effect.
- the invention solves the problem that the film thickness of the prior art glass substrate is not uniform when vapor deposition is performed by using a point evaporation source.
- the present invention provides a substrate evaporation apparatus, comprising: an evaporation source for performing vapor deposition on a substrate;
- An X-axis moving mechanism for moving the evaporation source in the X-axis direction
- a Y-axis moving mechanism for moving the evaporation source in the Y-axis direction
- Z-axis moving mechanism for moving the evaporation source in the Z-axis direction.
- the substrate evaporation apparatus further includes a controller, the controller being respectively connected to the X-axis moving mechanism, the Y-axis moving mechanism, and the Z-axis moving mechanism for controlling the evaporation source in X, ⁇ , The position and speed of the movement on the ⁇ axis.
- the opening size of the ejection opening of the evaporation source is adjustable.
- a baffle is provided at the injection port, and a lower end of the baffle is rotatably connected to an edge of the injection port, and the baffle can be outward with respect to a central axis of the injection port Or move inward to increase or decrease the opening of the injection port.
- the baffle has a curved curved shape at an edge along the ejection opening.
- the baffle is two pieces, respectively disposed on opposite sides of the injection port, and the two baffles are combined to form a port of eight bars; the baffle is opposite to the injection port. During the movement of the central axis outward or inward, the two baffles can slide relative to each other.
- the invention also provides a substrate evaporation method, comprising:
- the evaporation source movement trajectory is selected according to the measured thickness distribution of the film layer, and the film thickness of the substrate is adjusted by the movement of the evaporation source. If the distribution of the film on the substrate is thick in the middle and thin in the periphery, the movement path of the evaporation source on the X-axis and the Y-axis is controlled to make a circular motion; if the distribution of the film on the substrate is thin in the middle and thick around, Then controlling the movement trajectory of the evaporation source on the X-axis and the Y-axis to make a linear motion or a S-curve motion; if the membrane layer is irregularly distributed on the substrate, the evaporation source is controlled to perform a circular motion on the X-axis and the Y-axis. Movement combined with linear motion.
- the opening size of the ejection opening of the evaporation source is simultaneously adjusted during the movement of the evaporation source.
- the film thickness distribution of the substrate is not improved by the movement of the evaporation source, and the distance between the evaporation source and the substrate is adjusted by controlling the movement of the evaporation source on the Z axis.
- the substrate evaporation device and the evaporation method provided by the invention are particularly suitable for a point evaporation source, the evaporation source is changed from static to mobile, and the movement trajectory of the evaporation source is set according to the thickness distribution of the film layer, so that the point evaporation source is evaporated. At the same time, it moves according to a certain trajectory, thereby solving the phenomenon of uneven film thickness. At the same time, since the distance between the substrate and the evaporation source is adjustable, the tempo time can be reduced and the material utilization can be improved by reducing the pitch.
- FIG. 1 is a schematic diagram of evaporation of a conventional point evaporation source
- Figure 2 is an exploded view of the vapor deposition device of the present invention
- Figure 3 is a schematic structural view of an evaporation source of the present invention.
- Figure 5 is a working principle diagram of the vapor deposition method 2 of the present invention
- Fig. 6 is a schematic view showing the operation of the vapor deposition method 3 of the present invention.
- a substrate evaporation apparatus of the present invention includes an evaporation source 10, an X-axis moving mechanism, a Y-axis moving mechanism, and a Z-axis moving mechanism.
- the evaporation source 10 is used for vapor deposition on the substrate 20;
- the X-axis moving mechanism is used to realize the movement of the evaporation source in the X-axis direction;
- the Y-axis moving mechanism is used to realize the movement of the evaporation source in the Y-axis direction;
- the Z-axis moving mechanism Used to achieve the movement of the evaporation source in the Z-axis direction.
- the substrate evaporation apparatus of the present invention further includes a controller connected to the X-axis moving mechanism, the Y-axis moving mechanism, and the Z-axis moving mechanism, respectively, for controlling the movement of the evaporation source on the X, Y, and the x-axis Location and speed.
- the X-axis moving mechanism includes an X-axis slide 31, an X-axis guide 32 and an X-axis drive motor respectively disposed on the X-axis slide 31, and the X-axis moving mechanism includes a X-axis slide 41 and is respectively disposed on the X-axis a cymbal guide rail 42 and a cymbal drive motor on the slider 41, the cymbal movement mechanism includes a cymbal slider 51, a cymbal guide rail 52 respectively disposed on the cymbal slider 51, and a cymbal drive motor, and the evaporation source 10 can be
- the X-axis guide 32 is movably mounted on the x-axis guide 52
- the X-axis slide 31 is movably mounted on the x-axis guide 42.
- the x-axis drive motor is coupled to the evaporation source 10 via a cymbal drive mechanism to drive the evaporation source to move along the y-axis direction on the y-axis guide rail;
- the X-axis drive motor is coupled to the y-axis slide 51 via the X-axis drive mechanism.
- the driving x-axis slider 51 together with the evaporation source mounted thereon is along the driving X-axis slider 31 along with the x-axis slider 51 mounted on the X-axis slider 31 and the evaporation source 10 together with the evaporation source mounted thereon.
- the crucible guide 42 is moved in the z-axis direction.
- the X-axis, the ⁇ -axis or the ⁇ -axis transmission mechanism can be realized by, for example, a multi-gear transmission mechanism or a gear-and-pinion transmission structure.
- the X-axis, ⁇ -axis or ⁇ -axis drive motor can be a stepper motor.
- the X-axis moving mechanism, the y-axis moving mechanism and the y-axis moving mechanism can also be other structures to enable the movement of the evaporation source on the X, ⁇ , and ⁇ axes.
- the opening size of the ejection opening 11 of the evaporation source 10 is adjustable.
- spraying The opening of the opening 11 can be adjusted by: providing a baffle 60 at the ejection opening 11, the lower end of the baffle 60 being rotatably connected with the edge of the ejection opening 11, and the baffle 60 can be outward with respect to the central axis of the ejection opening 11 or Moving inward to increase or decrease the opening degree of the ejection opening 11, when the shutter 60 moves inward relative to the central axis of the ejection opening 11, the opening of the ejection opening 11 becomes small, when the shutter 60 is opposed to the ejection opening 11.
- the opening of the ejection opening 11 becomes large as in the direction of the arrow in FIG.
- the outward or inward movement of the baffle 60 relative to the central axis of the injection port 11 can be achieved, for example, by means of a hinge mechanism and/or a sliding rail mechanism.
- the ejection direction of the ejection opening 11 may be, for example, perpendicular to the substrate, or the ejection direction of the ejection opening 11 may be at an angle with the substrate 3 to adjust the vapor deposition thickness.
- the baffle has a curved curved shape at the edge along the ejection opening, which can better control the direction of vapor deposition steam and the shape of the vapor relative to the block-shaped baffle, so as to be vapor-deposited
- the spray is more evenly hooked; on the other hand, the curved shape makes it easier to mount the baffle above the evaporation source.
- the block-shaped baffle after evaporation, the film will be clearly divided on the substrate, the uniformity of the film thickness will be poor, and the curved baffle (flare type) can make the steam be a bell mouth. Shape emission, experiments show that film thickness uniformity will be better.
- the baffle 60 is two pieces, which are respectively disposed on opposite sides of the injection port 11, and two baffles 60 are integrated into the bell mouth, as shown in FIG. 3; During the outward or inward movement of the central axis of the injection port 11, the two baffles 60 can be relatively slid by the sliding mechanism. After the positions of the two baffles 60 are adjusted, the connectors or the connectors can be used.
- the latching member fixes the two baffles, and the plugging member and the latching member are disposed on the baffle plate, and have a plurality of adjusting points, and are fixed to the baffles of different opening sizes of the jetting ports.
- the present invention also provides a vapor deposition method of a substrate evaporation apparatus according to the above aspect, which comprises:
- the spacing is experimentally obtained.
- the best uniformity of film thickness uniformity is generally 400-800 mm; and the ejection port of the evaporation source can be passed.
- a baffle 60 at 11 to adjust the size of the opening The opening can be 5-30 mm.
- the movement path of the evaporation source is selected, and the movement track of the evaporation source is preset in the controller, and the film thickness of the substrate is adjusted by controlling the movement track of the evaporation source.
- the movement track of the evaporation source is preset in the controller, and the film thickness of the substrate is adjusted by controlling the movement track of the evaporation source.
- the evaporation source 10 is controlled by the controller to perform circular motion on the X-axis and the Y-axis, and the Z-axis direction is fixed, that is, the appropriate X is set.
- the Y coordinate adjusts the movement trajectory of the evaporation source 10 on the X-axis and the Y-axis, so that the evaporation source 10 makes a circular motion around the thin film layer (as shown by the arrow direction in FIG. 4) to compensate the insufficient thickness region, thereby
- the film thickness of the substrate 20 is made uniform as shown in FIG.
- the movement path of the evaporation source 10 on the X-axis and the Y-axis is controlled by the controller so that the line moves linearly, and the Z-axis direction is fixed, so that the evaporation source is made.
- the controller 10 controls the movement of the evaporation source 10 in the combination of the circular motion and the linear motion on the X-axis and the Y-axis, and may select a circular motion or a linear motion as needed or The s-curve motion (as indicated by the arrow in Figure 6), the Z-axis direction of the process remains fixed, as shown in Figure 6.
- the opening size of the ejection source of the evaporation source can be simultaneously adjusted, and the uniformity of the vapor deposition film thickness can be further achieved by adjusting the opening adjustment of the evaporation source and the adjustment of the movement trajectory.
- the controller is controlled to slide the evaporation source on the Z-axis guide to adjust the distance between the evaporation source and the substrate. Moreover, by adjusting the distance between the substrate and the evaporation source, the tact time of the evaporation can be reduced and the utilization rate of the material can be improved.
- the substrate evaporation apparatus and the vapor deposition method of the present invention are particularly suitable for a point evaporation source, the evaporation source is changed from stationary to moving, and the movement trajectory of the evaporation source is set according to the thickness distribution of the film layer, so that the point evaporation source is vapor-deposited. At the same time, it moves according to a certain trajectory, thereby solving the film thickness unevenness caused by the ion emission cosine law. At the same time, the distance between the substrate and the evaporation source can be adjusted and relatively flexible, and the tact time of the evaporation can be reduced and the utilization of the material can be improved by reducing the distance.
- the above description is only a preferred embodiment of the present invention, and it should be noted that those skilled in the art can make several improvements and substitutions without departing from the technical principles of the present invention. It should also be considered as the scope of protection of the present invention.
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/434,718 US20170152597A1 (en) | 2014-04-29 | 2014-08-12 | Substrate evaporation-coating device and evaporation-coating method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410177653.7A CN103938161A (zh) | 2014-04-29 | 2014-04-29 | 基板蒸镀装置和蒸镀方法 |
CN201410177653.7 | 2014-04-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015165167A1 true WO2015165167A1 (zh) | 2015-11-05 |
Family
ID=51186023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2014/084186 WO2015165167A1 (zh) | 2014-04-29 | 2014-08-12 | 基板蒸镀装置和蒸镀方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20170152597A1 (zh) |
CN (1) | CN103938161A (zh) |
WO (1) | WO2015165167A1 (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103938161A (zh) * | 2014-04-29 | 2014-07-23 | 京东方科技集团股份有限公司 | 基板蒸镀装置和蒸镀方法 |
US11286553B2 (en) * | 2015-03-11 | 2022-03-29 | Essilor International | Method for vapor deposition of optical substrate |
CN104911548B (zh) * | 2015-06-30 | 2017-05-03 | 合肥鑫晟光电科技有限公司 | 一种真空蒸镀装置及蒸镀方法 |
CN105401125B (zh) | 2015-12-15 | 2018-09-04 | 深圳市华星光电技术有限公司 | 用于有机电激光显示的基板的蒸镀方法和蒸镀装置 |
CN105861991B (zh) * | 2016-04-01 | 2019-01-18 | 京东方科技集团股份有限公司 | 一种线性加热源 |
CN106987810A (zh) * | 2017-05-24 | 2017-07-28 | 昆山国显光电有限公司 | 蒸镀坩埚热场控制装置及蒸镀*** |
CN109642314A (zh) * | 2017-06-28 | 2019-04-16 | 深圳市柔宇科技有限公司 | 成膜设备及成膜方法 |
CN108342694B (zh) * | 2018-01-31 | 2020-01-31 | 昆山国显光电有限公司 | 蒸镀方法及蒸镀装置 |
CN108823538A (zh) * | 2018-08-22 | 2018-11-16 | 北京铂阳顶荣光伏科技有限公司 | 蒸镀设备及蒸镀方法 |
CN111455342A (zh) * | 2019-01-18 | 2020-07-28 | 北京铂阳顶荣光伏科技有限公司 | 蒸发镀膜设备、蒸发镀膜***及蒸发镀膜控制方法 |
CN110739285A (zh) * | 2019-10-30 | 2020-01-31 | 北京工业大学 | 硅基金属中间层化合物半导体晶圆的结构及制备方法 |
CN111041441B (zh) * | 2019-12-28 | 2021-04-13 | 中国科学院长春光学精密机械与物理研究所 | 一种均匀镀膜方法、镀膜设备及计算机可读存储介质 |
CN111394698A (zh) * | 2020-05-06 | 2020-07-10 | 贵州省高新光电材料及器件研究院有限公司 | 一种均匀镀膜的方法 |
CN112501562B (zh) * | 2020-11-30 | 2022-02-11 | 深圳恒泰克科技有限公司 | 一种多源的电子束蒸发镀膜装置及膜厚均匀性修正方法 |
CN113512700A (zh) * | 2021-04-26 | 2021-10-19 | 睿馨(珠海)投资发展有限公司 | 一种梯度膜层的制备方法 |
CN215668183U (zh) * | 2021-10-09 | 2022-01-28 | 华能新能源股份有限公司 | 一种蒸发镀膜设备及蒸发镀膜挡板 |
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CN1550568A (zh) * | 2003-04-25 | 2004-12-01 | ��ʽ����뵼����Դ�о��� | 制造装置和发光装置 |
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CN103194724B (zh) * | 2013-04-08 | 2015-08-19 | 苏州大学 | 蒸镀遮罩、蒸镀***及材料的提纯方法 |
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- 2014-04-29 CN CN201410177653.7A patent/CN103938161A/zh active Pending
- 2014-08-12 WO PCT/CN2014/084186 patent/WO2015165167A1/zh active Application Filing
- 2014-08-12 US US14/434,718 patent/US20170152597A1/en not_active Abandoned
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CN1621555A (zh) * | 2003-04-10 | 2005-06-01 | 株式会社半导体能源研究所 | 掩模、容器和制造装置 |
CN1550568A (zh) * | 2003-04-25 | 2004-12-01 | ��ʽ����뵼����Դ�о��� | 制造装置和发光装置 |
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US20130164437A1 (en) * | 2011-12-22 | 2013-06-27 | Semiconductor Energy Laboratory Co., Ltd. | Film Formation Apparatus and Film Formation Method |
CN103938161A (zh) * | 2014-04-29 | 2014-07-23 | 京东方科技集团股份有限公司 | 基板蒸镀装置和蒸镀方法 |
Also Published As
Publication number | Publication date |
---|---|
US20170152597A1 (en) | 2017-06-01 |
CN103938161A (zh) | 2014-07-23 |
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