WO2015135248A1 - High-power led light source module - Google Patents
High-power led light source module Download PDFInfo
- Publication number
- WO2015135248A1 WO2015135248A1 PCT/CN2014/077368 CN2014077368W WO2015135248A1 WO 2015135248 A1 WO2015135248 A1 WO 2015135248A1 CN 2014077368 W CN2014077368 W CN 2014077368W WO 2015135248 A1 WO2015135248 A1 WO 2015135248A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- insulating layer
- light source
- led light
- power led
- source module
- Prior art date
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- 230000000996 additive effect Effects 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- ZCLVNIZJEKLGFA-UHFFFAOYSA-H bis(4,5-dioxo-1,3,2-dioxalumolan-2-yl) oxalate Chemical compound [Al+3].[Al+3].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O ZCLVNIZJEKLGFA-UHFFFAOYSA-H 0.000 description 1
- JRPRCOLKIYRSNH-UHFFFAOYSA-N bis(oxiran-2-ylmethyl) benzene-1,2-dicarboxylate Chemical compound C=1C=CC=C(C(=O)OCC2OC2)C=1C(=O)OCC1CO1 JRPRCOLKIYRSNH-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 229940021013 electrolyte solution Drugs 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010952 in-situ formation Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0183—Dielectric layers
- H05K2201/0187—Dielectric layers with regions of different dielectrics in the same layer, e.g. in a printed capacitor for locally changing the dielectric properties
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10363—Jumpers, i.e. non-printed cross-over connections
Definitions
- the present invention belongs to the technical field of semiconductor illumination, and more particularly to a light source module that facilitates efficient heat dissipation and is applied to high power LEDs.
- LED Light Emitting Diode
- LED Light Emitting Diode
- Semiconductor LED materials can directly convert electrical energy into light energy, which has the biggest difference from traditional illumination sources. It has high luminous efficiency and consumes only one-eighth of the energy of ordinary incandescent lamps. It also has long life, no stroboscopic, no infrared and ultraviolet radiation. It is a typical energy-saving, green and environmentally friendly lighting, which has been widely used in street lighting, industrial and mining, and public places.
- the LED light source is directly packaged inside the lamp body. Because the lamp body material is mostly made of conductive metal, the insulation protection of the circuit must be considered when the circuit is connected, which is time-consuming, labor-intensive, safe, and not stable. Therefore, a package circuit board of an LED light source appears, that is, a plurality of LEDs are firstly packaged on a whole substrate, and pre-wired on the substrate to electrically connect the LED light source packaged thereon, and then the substrate is placed The inside of the lamp body is connected to the lighting circuit.
- LED substrates used in the field of LED lighting mainly distinguish between conventional PCB substrates (mainly resin substrates), ceramic substrates and insulating metal substrates (mainly aluminum alloy substrates), and for high-power LEDs. Packaged, insulated metal substrates are undoubtedly the best solution to the heat dissipation problem.
- an object of the present invention is to provide a high power LED light source module.
- the high power LED light source module of the present invention not only has a relatively low cost but also has the advantages of high thermal conductivity, aging resistance, puncture resistance and reliable performance.
- the metal connecting body is a lead, a bump and/or a bridge using silver, gold or copper.
- the metal substrate is made of an alloy material selected from the group consisting of aluminum, copper, nickel, iron, gold, silver, titanium, molybdenum, silicon, magnesium, lead, tin, indium, gallium or alloys thereof.
- the metal substrate is made of aluminum, copper, aluminum alloy or copper alloy.
- the LED light source is combined with a secondary optical element.
- Optical components such as lenses, mirrors, and light scattering.
- the metal substrate is made of steel plated with aluminum or copper, and the steel is selected from one of low carbon steel, heat resistant steel or stainless steel.
- the metal substrate is subjected to a surface treatment step, and the surface treatment step includes any one of a roughening treatment, an acid washing, and an alkali etching step.
- a metal or non-metal transition layer is formed on the surface of the metal substrate.
- the surface of the metal substrate is subjected to surface treatment to form an electrically insulating anodized aluminum film or an electrically insulating organic film layer on the surface thereof.
- the high thermal conductive insulating layer is made of a ceramic material or a non-metallic single crystal material.
- the ceramic material is formed by a sintering or vacuum coating method, and the vacuum coating method is selected from the group consisting of resistance heating evaporation, flash evaporation, electron beam evaporation, laser evaporation, arc evaporation, radio frequency heating evaporation, glow DC sputtering.
- the vacuum coating method is selected from the group consisting of resistance heating evaporation, flash evaporation, electron beam evaporation, laser evaporation, arc evaporation, radio frequency heating evaporation, glow DC sputtering.
- the thermal conductivity of the high thermal conductive insulating layer ranges from 30 to 500 W/mK, preferably from 50 to 500 W/mK.
- the thickness of the high thermal conductive insulating layer is 20 ⁇ 1000 ⁇ , preferably 20 ⁇ 500 ⁇ .
- the LED lamp bead or the LED chip is connected to the metal circuit by wave soldering, reflow soldering, eutectic soldering or using a conductive adhesive.
- the high thermal conductive insulating layer is formed with a metal circuit and a pad, the LED lamp bead or the LED chip is coupled to the bonding pad, and the pad is electrically connected to the metal circuit.
- the power of a single LED lamp bead or chip is 1 W or more, preferably 3 W or more, and more preferably 5 W or more.
- the resin insulating layer is a cured resin containing a thermosetting resin and a curing agent.
- the resin insulating layer is a cured resin containing a thermosetting resin, a curing agent, and an inorganic filler.
- thermosetting resin is one selected from the group consisting of an epoxy resin, a silicone resin, a phenol resin, and an imide resin.
- the inorganic filler is selected from one or more of silicon dioxide, aluminum oxide, aluminum nitride, silicon nitride or boron nitride.
- the thermal conductivity of the resin insulating layer is 0.5 W/mK or more, and preferably the thermal conductivity is 1.0 W/mK or more, for example
- the resin insulating layer has a thickness of 20 to 1000 ⁇ m, and preferably has a thickness ranging from 20 to 500 ⁇ m.
- the high-power LED light source module of the present invention comprises a metal substrate, a resin insulating layer and a high thermal conductive insulating layer are formed on the metal substrate, and a metal pattern circuit is formed on the resin insulating layer, the high thermal conductive insulating layer A metal circuit and a high power LED lamp bead or chip are formed, and the metal pattern circuit on the resin insulating layer and the metal circuit on the high thermal conductive insulating layer are connected by a metal connecting body.
- the LED lamp bead or LED chip is connected to the metal wire by wave soldering, reflow soldering, eutectic soldering or using a conductive adhesive.
- the metal substrate may be made of an alloy material selected from the group consisting of aluminum, copper, nickel, iron, gold, silver, titanium, molybdenum, silicon, magnesium, lead, tin, indium, gallium or alloys thereof.
- the metal substrate is made of aluminum, copper, aluminum alloy or copper alloy.
- the thickness of the metal substrate can be selected according to actual needs, and can be, for example, from 0.1 mm to several tens of mm.
- the substrate is preferably aluminum or an aluminum alloy, and the aluminum alloy is preferably an aluminum alloy containing no intermetallic compound. Specifically, it is preferably aluminum having a purity of less than 99% by mass.
- an element which does not easily generate an intermetallic compound may be added.
- an aluminum-magnesium alloy of an appropriate amount of magnesium can be added.
- an additive element having a high solid solution limit such as copper or silicon.
- the acid may be an inorganic acid and/or an organic acid, and the inorganic acid may be, for example, sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid or the like; and the organic acid may be, for example, a carboxylic acid or a sulfonic acid, such as formic acid, acetic acid, tartaric acid, Oxalic acid, malic acid, ascorbic acid, and benzoic acid.
- the base to be used may be, for example, an alkali metal hydroxide such as sodium hydroxide or potassium hydroxide, or an organic base such as tetramethylammonium hydroxide or trimethyl(hydroxyethyl)ammonium hydroxide.
- the high power described in the present invention means that the power of a single LED lamp bead or chip is 1 W or more, preferably 3 W or more, and more preferably 5 W or more.
- the LED refers to a light-emitting diode, which refers to a light-emitting semiconductor element having a contact region for supplying power to a diode.
- Different forms of semiconductor light emitting diodes may be formed from one or more lanthanum elements and one or more PN junctions (III-V semiconductors) of group V elements. Examples of III-V semiconductor materials that can be used for LEDs include: nitrides such as gallium nitride or indium gallium nitride; and phosphides such as indium gallium phosphide.
- the LEDs may be in a packaged or unpackaged structure, including, for example, LED dies, LED lamp beads, LED chips, and other structured LEDs.
- a LED chip (COB) is an LED die that is mounted directly on a circuit substrate.
- the term LED also includes LEDs that are encapsulated with phosphors or associated with phosphors, wherein the phosphors convert light emitted by the LEDs into light of different wavelengths. Electrical connections to the LEDs can be formed by wire bonding, tape automated bonding (TAB), or chip flip bonding.
- the LEDs may be top-emitting, such as the LEDs disclosed in US 5,998,935 A, or the LEDs may be side-illuminated, such as the LEDs disclosed in US 2004/233665 A1.
- the LEDs can be selected to emit at any desired wavelength, such as in the red, green, blue, ultraviolet or far infrared spectral region.
- each LED can be emitted in the same spectral region or can be emitted in a different spectral region.
- Different LEDs can be used to produce different colors, wherein the color of the light emitted by the illuminating elements is selectable. Separate control of the different LEDs results in the ability to control the color of the emitted light.
- white light is light that stimulates the human eye's photoreceptor to produce an appearance that the average viewer considers to be "white.” This white light can be biased toward red (commonly referred to as warm white light) or blue (commonly referred to as cool white light).
- the thermal conductivity is in the range of 30 500 W/mK, and preferably, the high thermal conductive insulating layer has a thermal conductivity in the range of 50 500 W/mK.
- the thickness of the highly thermally conductive insulating layer is preferably 20 to 1000 ⁇ m, and more preferably, the thickness is in the range of 20 to 500 ⁇ m.
- the high thermal conductive insulating layer may be made of a ceramic material or a non-metallic single crystal material, and the ceramic material may be selected from, but not limited to, zinc oxide, cerium oxide, aluminum oxide, titanium dioxide, silicon dioxide, silicon nitride, sapphire, nitriding.
- the ceramic material described in the present invention may be welded to the metal substrate according to the present invention by cutting the fired ceramic plate, and the welding method may be, for example, a brazing method such as soldering or brazing. Or active brazing, etc.
- the ceramic material described in the present invention can also be produced by an in-situ formation method, for example, by a vacuum coating method such as a usual physical vapor deposition method or a chemical vapor deposition method.
- a vacuum coating method such as a usual physical vapor deposition method or a chemical vapor deposition method.
- physical vapor deposition for example, an evaporation, sputtering or ion plating deposition method.
- vacuum evaporation deposition has the advantages of simplicity, convenience, easy film formation, high film formation efficiency and high efficiency, and is the most widely used technology in film preparation.
- the principle is to provide sufficient heat to the material to be evaporated, such as the ceramic material of the present invention, in a vacuum environment to obtain the vapor pressure necessary for evaporation. At the appropriate temperature, the evaporating particles condense on the metal substrate, which allows vacuum evaporation of the film to be deposited.
- vapor deposition for example, resistance heating evaporation, flash evaporation, electron beam evaporation, laser evaporation, arc evaporation, or radio frequency heating evaporation can be selected.
- the thermal conductivity is 0.5 W/mK or more, and more preferably, the thermal conductivity is 1.0 W/mK or more, for example, It is in the range of 0.5 30 W/mK.
- the thickness of the resin insulating layer is preferably 20 to 1000 ⁇ m, and more preferably, the thickness thereof is 20 to 500 ⁇ m. Since the thickness is less than 20 ⁇ m, electrical insulation becomes insufficient, and if it is larger than 500 ⁇ m, heat dissipation may be impaired, especially when the thickness is more than 1000 ⁇ m, the heat dissipation performance is remarkably lowered.
- the resin insulating layer is a cured resin containing a thermosetting resin and a curing agent.
- the resin insulating layer is a cured resin containing a thermosetting resin, a curing agent, and an inorganic filler.
- a catalyst, a silane coupling agent, a titanate coupling agent, a stabilizer, a curing accelerator, or the like may be used as needed.
- thermosetting resin for example, an epoxy resin, a silicone resin, a phenol resin, an imide resin, or the like can be selected. It is preferred to use an epoxy resin from the viewpoint of thermal conductivity. Further, as the epoxy resin, a bifunctional epoxy resin which can be obtained at a relatively low cost, for example, bisphenol quinone diglycidyl ether, bisphenol F diglycidyl ether, bisphenol S diglycidyl ether, isophthalic acid is preferably used.
- an acid anhydride or a phenol having excellent mechanical properties and electrical properties is preferably used, and in order to secure the mechanical properties and dielectric properties of the insulating layer, it is preferred to add an addition polymerization type curing agent.
- an acid anhydride or a phenol which can be obtained at a relatively low cost is preferably used, and the acid anhydride includes phthalic anhydride, tetrahydromethyl phthalic anhydride, hexahydrophthalic anhydride, trimellitic anhydride, Methyl norbornene dianhydride, etc., and phenols include novolacs, o-cresol novolac resins, bisphenol A-type novolac resins, and the like.
- a catalyst may be added.
- imidazoles such as 2-methylimidazole, 2- ⁇ -alkylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-methyl-4-methylimidazole, and the like are preferable.
- the metal pattern circuit can be patterned by a method such as screen printing on a metal substrate by using a curable resin composition slurry for forming an insulating layer, and then formed into a semi-cured state after heating, and then pasted. a metal foil, followed by heating to form a substantially fully cured state; or using a sheet in which the insulating layer is previously processed into a semi-cured state, using a hot pressing device to be integrated with a metal foil for forming a metal pattern circuit Methods and so on.
- the anodic oxide film is prepared as follows: First, the aluminum plate is cleaned and descaled, and then anodized in an aqueous citric acid solution containing: 20 to 35 g/L of citric acid, 3 to 5 g. /L of 6-aminoacetic acid, 0.5 ⁇ 1.0g/L of hydrogen peroxide, 3 ⁇ 5g/L of triammonium citrate; at a liquid temperature of 10 ⁇ 20 ° C, current density of 0.5 ⁇ lA/dm 2 , electrolytic treatment 20 ⁇ 30 min.
- the supply of aluminum ions can be made sufficient in the anodizing treatment, thereby obtaining a dense anode.
- the aluminum oxide film can satisfy the requirement that the insulation endurance time is more than 1000 hours without the sealing treatment under the conditions of a film thickness of ⁇ or more.
- the preparation method of the anodized film described in this embodiment is as follows: First, the aluminum plate is cleaned and descaled, and then in the lemon. Anodizing treatment is carried out in an aqueous acid solution containing: 20 g/L of citric acid, 3 g/L of 6-aminoacetic acid, 1.0 g/L of hydrogen peroxide, and 3 g/L of triammonium citrate; The liquid temperature was 10 ° C, the current density was 1 A/dm 2 , and the electrolytic treatment was carried out for 20 min. The obtained dense anodized aluminum film has an insulation durability time of more than 1000 hours.
- the preparation method of the anodized film described in this embodiment is as follows: First, the aluminum plate is cleaned and descaled, and then anodized in an aqueous solution of citric acid containing: 30 g/L of citric acid, 4 g/ L-6-aminoacetic acid, 1.0 g/L hydrogen peroxide, 5 g/L triammonium citrate; at a liquid temperature of 20 ° C, a current density of 1 A/dm 2 , and an electrolytic treatment for 20 min.
- the obtained dense anodized aluminum film has an insulation durability time of more than 1000 hours.
- the preparation method of the anodized film described in this embodiment is as follows: First, the aluminum plate is cleaned and descaled, and then anodized in an aqueous citric acid solution containing: 35 g/L of citric acid, 5 g/ L-6-aminoacetic acid, 1.0 g/L hydrogen peroxide, 5 g/L triammonium citrate; at a liquid temperature of 10 ° C, a current density of 1 A/dm 2 , and electrolytic treatment for 30 min.
- the obtained dense anodized aluminum film has an insulation durability time of more than 1500 hours.
- the aluminum plate is pickled and descaled, and then anodized in an oxalic acid solution containing 35 g/L of oxalic acid and 5 g/L of aluminum oxalate; the liquid temperature is 20 ° C, and the current density is 1 A/ Dm 2 , electrolytic treatment for 30 min; then blocking treatment in aqueous boric acid solution containing 0.5 mol/L boric acid and 0.2 mol/L sodium tetraborate; sealing condition is liquid temperature 20 ° C, current The density is 1A/dm 2 , the electrolysis treatment time is 5 minutes, and the insulation endurance time is 300 to 500 hours. Comparative example 2
- the aluminum plate is pickled and descaled, and then anodized in a sulfuric acid solution containing 35 g/L of oxalic acid and 5 g/L of aluminum sulfate; at a liquid temperature of 20 ° C, a current density of 1 A/ Dm 2 , electrolytic treatment for 30 min; then blocking treatment in aqueous boric acid solution containing 0.5 mol/L boric acid and 0.2 mol/L sodium tetraborate; sealing condition is liquid temperature 20 ° C, current The density is 1A/dm 2 , the electrolysis treatment time is 5 minutes, and the insulation endurance time is 250 to 400 hours. ⁇ Thermal insulation
- the high thermal conductive insulating layer has a thermal conductivity in the range of 50 500 W/mK.
- the high thermal conductive insulating layer has a thickness in the range of 20 500 ⁇ , for example, 50 ⁇ .
- the highly thermally conductive insulating layer may be made of a ceramic material or a non-metallic single crystal material. As a ceramic material, it can be selected but not limited to zinc oxide, cerium oxide, aluminum oxide, titanium dioxide, silicon dioxide, nitrogen. Silicon, sapphire, aluminum nitride, silicon carbide, silicon oxynitride or aluminum oxynitride.
- the ceramic material described in the present invention may be welded to the metal substrate according to the present invention by cutting the fired ceramic plate, and the welding method may be, for example, a brazing method such as soldering or brazing.
- the active brazing composition may be, for example, 2.25 wt / Ti, 2.00 wt / Al, 3.00 wt / Si and the balance of Cu; for example, 1.25 wt ° / Ti, 32.250 wt ° / Cu and the balance of Ag; for example, 1.25 wt ° / Ti, 12.50 wt ° / In, 27.25 wt ° / Cu and the balance of Ag can be selected.
- the thermal conductivity of the resin insulating layer may be selected to be 0.5 30 W/mK, and the thickness of the resin insulating layer is preferably in the range of 20 to 500 ⁇ .
- the resin insulating layer is formed of a curable resin composition containing a thermosetting resin, a curing agent, and an inorganic filler. Further, in the curable resin composition for forming an insulating layer, other components may be used as needed. .
- the forming conditions can be cured, for example, at 160 to 180 ° C for 30 to 180 seconds.
- the curable resin composition contains 55 to 60% by weight of bisphenol F diglycidyl ether, 12.5 to 15.0% by weight of vinyltriethoxysilane, and 8.0 to 10.0% by weight of benzoic acid- 2-hydroxyethyl ester, 3.2 to 5.0 wt% trimethylsilyl imidazole, 2.5 to 3.0 wt% phthalic anhydride, 0.5 to 1.0 wt/2,6-di-tert-butyl-p-cresol, and 3 ⁇ 8 wt% of alumina fine particles having an average particle diameter of 2.0 ⁇ m and 3 to 8 wt% of alumina fine particles having an average particle diameter of 5.0 ⁇ m.
- the curable resin composition of the present embodiment contains 55 wt% of bisphenol F diglycidyl ether, 15.0 wt% of vinyl triethoxysilane, 10.0 wt / of benzoic acid-2-hydroxyethyl ester, 5.0 wt. % trimethylsilyl imidazole, 2.5 wt% phthalic acid An acid anhydride, 1.0 wt ° / 2, 6-di-tert-butyl-p-cresol, and 5.5 wt% of alumina fine particles having an average particle diameter of 2.0 ⁇ m and 6.0 wt% of alumina fine particles having an average particle diameter of 5.0 ⁇ m.
- the thermal conductivity was measured to be 20 25 .
- the curable resin composition of the present embodiment contains 60% by weight of bisphenol F diglycidyl ether, 12.5 wt/vinyltriethoxysilane, 8 wt/benzoic acid-2-hydroxyethyl ester, 3.2 wt% Trimethylsilyl imidazole, 3.0 wt% phthalic anhydride, 1.0 wt/2,6-di-tert-butyl-p-cresol, and 6.3 wt% alumina particles having an average particle diameter of 2.0 ⁇ m and 6.0 wt % of alumina particles having an average particle diameter of 5.0 ⁇ m.
- the thermal conductivity is 22 to 26.
- the curable resin composition of the present embodiment contains 58 wt% of bisphenol F diglycidyl ether, 15 wt/vinyl triethoxysilane, 10 wt/benzoic acid-2-hydroxyethyl ester, and 5 wt% of trimethyl Silyimidazole, 3.0 wt% phthalic anhydride, 1.0 wt/2,6-di-tert-butyl-p-cresol, and 4 wt% alumina particles having an average particle diameter of 2.0 ⁇ m and 4 wt/average particle diameter It is an alumina fine particle of 5.0 ⁇ m.
- the thermal conductivity was measured to be 18 to 22 W/mK.
- the curable resin composition of the present embodiment contains 78% by weight of bisphenol F diglycidyl ether, 5% by weight of 2-methylimidazole, 3.0% by weight of phthalic anhydride, 1.0 wt/ 2, 6-two. Tert-butyl-p-cresol, 6.5 wt% of alumina fine particles having an average particle diameter of 2.0 ⁇ m and 6.5 wt% of alumina fine particles having an average particle diameter of 5.0 ⁇ m.
- the thermal conductivity is 15 to 20 W/mK.
- the resin insulating layer described in the present invention should have excellent heat discoloration resistance in addition to the required thermal conductivity.
- the curable resin composition was 170. C, 8 N/mm 2 and a curing time of 120 seconds were processed into a disc having a diameter of 50 mm and a thickness of 3 mm as a sample, and then placed at 150 ° C for 24 hours, and the heat-resistant color was observed by naked eyes.
- the samples described in Examples 4-6 were found to be free from discoloration, while the samples described in Example 7 were slightly discolored or discolored.
- a metal pattern circuit is formed on the resin insulating layer, or on the resin insulating layer and the high thermal conductive insulating layer.
- a conductive copper film may be formed on the edge layer by bonding or pressing a copper foil, or a copper film may be formed by sputtering or electroless plating (requiring activation in advance).
- the high-power LED light source module of the invention has improved heat dissipation performance and reliability, and can be widely applied in street lighting, industrial and mining, and public places in the industrial field.
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Abstract
The present invention relates to a high-power LED light source module, related to the technical field of semiconductor lightings. The high-power LED light source module comprises a metal substrate. A resin insulating layer and a high thermal-conductivity insulating layer are formed on the metal substrate. Also, a metal pattern circuit is formed on the resin insulating layer. A metal circuit and either a high-power LED light bulb or chip are formed on the high thermal-conductivity insulating layer. The metal pattern circuit on the resin insulating layer and the metal circuit on the high thermal-conductivity insulating layer are connected via a metal connector. Employment of the high-power LED light source module of the present invention not only involves relatively reduced costs but also provides the advantages of high thermal conductivity, resistance against aging, resistance against puncturing, and reliable performance.
Description
大功率 LED光源模块 High-power LED light source module
技术领域 Technical field
本发明属于半导体照明的技术领域， 更具体的说， 本发明涉及一种便于高效散热并应用 于大功率 LED的光源模块。 The present invention belongs to the technical field of semiconductor illumination, and more particularly to a light source module that facilitates efficient heat dissipation and is applied to high power LEDs.
背景技术 Background technique
LED (发光二极管)技术始于 20世纪 60年代末， 经过大约半个世纪的发展， 作为一种新型光 源， 由于具有节能、 环保、 寿命长、 启动速度快等传统光源无可比拟的优势而得到了空前的 发展。 大功率 LED固态照明是继白炽灯发明以来， 最重要的照明革命。 半导体 LED材料能将 电能直接转化为光能， 具有与传统照明光源最大的不同， 发光效率高， 能耗仅为普通白炽灯 八分之一； 而且寿命长， 无频闪、 无红外和紫外辐射等是典型的节能、 绿色环保照明， 目前 已经广泛应用于路灯照明、 工矿以及公共场所等。 LED (Light Emitting Diode) technology began in the late 1960s. After about half a century of development, as a new type of light source, it has the unparalleled advantages of traditional light sources such as energy saving, environmental protection, long life and fast startup speed. An unprecedented development. High-power LED solid-state lighting is the most important lighting revolution since the invention of incandescent lamps. Semiconductor LED materials can directly convert electrical energy into light energy, which has the biggest difference from traditional illumination sources. It has high luminous efficiency and consumes only one-eighth of the energy of ordinary incandescent lamps. It also has long life, no stroboscopic, no infrared and ultraviolet radiation. It is a typical energy-saving, green and environmentally friendly lighting, which has been widely used in street lighting, industrial and mining, and public places.
随着电子工业的飞速发展， 电子产品的体积越来越小， 伴随着 LED电流强度和发光量的 增加， LED芯片的发热量也随之上升， 对于高功率 LED， 输入能源的 80%都以热的形态消耗 掉。 如果不及时将芯片发出的热量导出并消散， 大量的热量将积聚在 LED内部， 将造成芯片 的温升效应， LED的发光效率将急剧下降， 而且寿命和可靠性也将大打折扣； 另外高温高热 将使 LED封装结构内部产生机械应力， 还可能引发质量问题。 因此随着单颗大功率 LED的功 率密度的不断提高， 对大功率 LED封装材料及结构的设计， 也日益成为半导体照明领域的一 个巨大挑战。 With the rapid development of the electronics industry, the volume of electronic products is getting smaller and smaller. With the increase of LED current intensity and illuminance, the heat generation of LED chips also increases. For high-power LEDs, 80% of input energy is The hot form is consumed. If the heat emitted by the chip is not released and dissipated in time, a large amount of heat will accumulate inside the LED, which will cause the temperature rise effect of the chip, the luminous efficiency of the LED will drop sharply, and the life and reliability will be greatly reduced; It will cause mechanical stress inside the LED package structure and may also cause quality problems. Therefore, as the power density of a single high-power LED continues to increase, the design of high-power LED packaging materials and structures is increasingly becoming a huge challenge in the field of semiconductor lighting.
最初的 LED照明产品，其 LED光源直接封装于灯体内部，因其灯体材料多为导电金属材质， 在电路连接时， 必须考虑电路的绝缘保护， 费时费力且安全性、 稳定性不高， 因此而出现了 LED光源的封装线路板， 即先行将多颗 LED排布封装于整块基板， 并在基板上预布线以对封 装于其上的 LED光源进行电路连接， 再将该基板置于灯体内部连接入照明电路。 目前， LED 照明领域所应用的 LED基板， 从材质上区分主要有常规 PCB基板 (主要为树脂类基板)、 陶瓷 质基板与绝缘金属质基板 （主要为铝合金基板)， 而对于大功率 LED的封装， 绝缘金属基板无 疑是解决散热问题的最佳方案。 In the original LED lighting products, the LED light source is directly packaged inside the lamp body. Because the lamp body material is mostly made of conductive metal, the insulation protection of the circuit must be considered when the circuit is connected, which is time-consuming, labor-intensive, safe, and not stable. Therefore, a package circuit board of an LED light source appears, that is, a plurality of LEDs are firstly packaged on a whole substrate, and pre-wired on the substrate to electrically connect the LED light source packaged thereon, and then the substrate is placed The inside of the lamp body is connected to the lighting circuit. At present, LED substrates used in the field of LED lighting mainly distinguish between conventional PCB substrates (mainly resin substrates), ceramic substrates and insulating metal substrates (mainly aluminum alloy substrates), and for high-power LEDs. Packaged, insulated metal substrates are undoubtedly the best solution to the heat dissipation problem.
传统的绝缘金属基板由金属基板、 绝缘层和导电层 （即金属化层） 构成。 而绝缘层是其
中的关键技术， 其主要起到粘结、 绝缘和导热的功能。 绝缘层是功率模块结构中最大的导热 屏障， 它的热传导性能越好， 越有利于器件运行时所产生热量的扩散， 也就越有利于降低器 件的运行温度， 从而达到提高模块的功率负荷， 减少体积， 延长寿命并且提高输出功率的目 的。 作为优选地， 采用高导热性氮化铝材料作为绝缘导热层， LED的热量可以借助高导热性 氮化铝陶瓷层将热量传至金属基板。 虽然其导热性和耐热性显著优于绝缘树脂材料， 能够实 现高功率 LED封装， 但是其不仅成本昂贵， 而且存在难以制作大尺寸的制品的问题。 A conventional insulated metal substrate is composed of a metal substrate, an insulating layer, and a conductive layer (i.e., a metallized layer). The insulating layer is its The key technology in the main function of bonding, insulation and heat conduction. The insulating layer is the largest thermal barrier in the power module structure. The better its thermal conductivity, the better the diffusion of heat generated during device operation, and the lower the operating temperature of the device, thus increasing the power load of the module. Reduces volume, extends life and increases output power. Preferably, a highly thermally conductive aluminum nitride material is used as the insulating and thermally conductive layer, and the heat of the LED can transfer heat to the metal substrate by means of the highly thermally conductive aluminum nitride ceramic layer. Although its thermal conductivity and heat resistance are remarkably superior to those of an insulating resin material, high-power LED packaging can be realized, but it is not only expensive, but also has a problem that it is difficult to manufacture a large-sized article.
发明内容 Summary of the invention
为了解决上述技术问题， 本发明的目的在于提供一种大功率 LED光源模块。 采用本发明 所述的大功率 LED光源模块不仅成本相对较低而还具有高导热率、 耐老化、 抗击穿并且性能 可靠的优点。 In order to solve the above technical problems, an object of the present invention is to provide a high power LED light source module. The high power LED light source module of the present invention not only has a relatively low cost but also has the advantages of high thermal conductivity, aging resistance, puncture resistance and reliable performance.
本发明所述的大功率 LED光源模块， 包括金属基板， 其特征在于： 所述金属基板上形成 有树脂绝缘层和高导热绝缘层， 并且所述树脂绝缘层上形成有金属图案电路， 所述高导热绝 缘层形成有金属电路和大功率 LED灯珠或者芯片， 所述树脂绝缘层上的金属图案电路与所述 高导热绝缘层上的金属电路通过金属连接体连接。 The high-power LED light source module of the present invention includes a metal substrate, wherein: a metal insulating layer and a high thermal conductive insulating layer are formed on the metal substrate, and a metal pattern circuit is formed on the resin insulating layer, The high thermal conductive insulating layer is formed with a metal circuit and a high power LED lamp bead or chip, and the metal pattern circuit on the resin insulating layer and the metal circuit on the high thermal conductive insulating layer are connected by a metal connecting body.
其中， 所述金属基板上具有多个树脂绝缘层和多个高导热绝缘层； 并且所述树脂绝缘层 之间相邻设置或者间隔设置； 所述高导热绝缘层之间相邻或者间隔设置； 所述树脂绝缘层与 所述高导热绝缘层之间相邻设置或者间隔设置。 Wherein, the metal substrate has a plurality of resin insulating layers and a plurality of high thermal conductive insulating layers; and the resin insulating layers are disposed adjacent to each other or spaced apart; the high thermal conductive insulating layers are adjacent or spaced apart; The resin insulating layer and the high thermal conductive insulating layer are disposed adjacent to each other or at intervals.
其中， 所述金属连接体为采用银、 金或铜的引线、 ***物和 /或桥接物。 Wherein, the metal connecting body is a lead, a bump and/or a bridge using silver, gold or copper.
其中， 所述金属基板由选自铝、 铜、 镍、 铁、 金、 银、 钛、 钼、 硅、 镁、 铅、 锡、 铟、 镓或者它们的合金材料制成。 Wherein, the metal substrate is made of an alloy material selected from the group consisting of aluminum, copper, nickel, iron, gold, silver, titanium, molybdenum, silicon, magnesium, lead, tin, indium, gallium or alloys thereof.
其中， 所述金属基板由铝、 铜、 铝合金或铜合金制成。 Wherein, the metal substrate is made of aluminum, copper, aluminum alloy or copper alloy.
其中， 所述高导热绝缘层上结合封装好的 LED灯珠或者未封装的 LED芯片， 芯片上结合 荧光粉。 Wherein, the high thermal conductive insulating layer is combined with the packaged LED lamp bead or the unpackaged LED chip, and the phosphor is combined on the chip.
其中， 所述 LED光源上结合二次光学元件。 如透镜， 反光镜， 光散射等光学元件。 其中， 所述金属基板由镀覆有铝或铜的钢制成， 所述的钢选自低碳钢、 耐热钢或不锈钢 中的一种。
其中， 所述金属基体经过表面处理工序， 所述的表面处理工序包含粗化处理、 酸洗或者 碱蚀刻工序中的任意一种。 Wherein, the LED light source is combined with a secondary optical element. Optical components such as lenses, mirrors, and light scattering. Wherein, the metal substrate is made of steel plated with aluminum or copper, and the steel is selected from one of low carbon steel, heat resistant steel or stainless steel. The metal substrate is subjected to a surface treatment step, and the surface treatment step includes any one of a roughening treatment, an acid washing, and an alkali etching step.
其中， 所述金属基体表面形成有金属或非金属过渡层。 Wherein, a metal or non-metal transition layer is formed on the surface of the metal substrate.
其中， 所述金属基体表面经过表面处理在其表面上形成电绝缘的阳极氧化铝膜或电绝缘 的有机膜层。 Wherein, the surface of the metal substrate is subjected to surface treatment to form an electrically insulating anodized aluminum film or an electrically insulating organic film layer on the surface thereof.
其中， 所述高导热绝缘层由陶瓷材料或非金属单晶材料制成。 Wherein, the high thermal conductive insulating layer is made of a ceramic material or a non-metallic single crystal material.
其中， 所述陶瓷材料选自氧化锌、 氧化铍、 氧化铝、 二氧化钛、 二氧化硅、 氮化硅、 蓝 宝石、 氮化铝、 碳化硅、 氮氧化硅或氮氧化铝中的一种或几种。 Wherein the ceramic material is one or more selected from the group consisting of zinc oxide, cerium oxide, aluminum oxide, titanium dioxide, silicon dioxide, silicon nitride, sapphire, aluminum nitride, silicon carbide, silicon oxynitride or aluminum oxynitride. .
其中， 所述陶瓷材料通过烧结或真空镀膜方法形成， 所述的真空镀膜方法选自电阻加热 蒸镀、 闪烁蒸镀、 电子束蒸发、 激光蒸发、 电弧蒸发、 射频加热蒸发、 辉光直流溅射、 磁控 溅射、 射频溅射、 离子束溅射、 反应溅射、 离子镀或化学气相沉积方法中的一种。 Wherein, the ceramic material is formed by a sintering or vacuum coating method, and the vacuum coating method is selected from the group consisting of resistance heating evaporation, flash evaporation, electron beam evaporation, laser evaporation, arc evaporation, radio frequency heating evaporation, glow DC sputtering. One of magnetron sputtering, radio frequency sputtering, ion beam sputtering, reactive sputtering, ion plating or chemical vapor deposition.
其中， 所述高导热绝缘层的导热系数的范围为 30 500 W/mK， 优选为50~500 W/mK。 其中， 所述高导热绝缘层的厚度为 20~1000 μηι， 优选为 20~500 μηι。 The thermal conductivity of the high thermal conductive insulating layer ranges from 30 to 500 W/mK, preferably from 50 to 500 W/mK. The thickness of the high thermal conductive insulating layer is 20~1000 μηι, preferably 20~500 μηι.
其中， 所述 LED灯珠或 LED芯片通过波峰焊接、 回流焊接、 共晶焊接或使用导电粘合剂 与金属电路连接。 Wherein, the LED lamp bead or the LED chip is connected to the metal circuit by wave soldering, reflow soldering, eutectic soldering or using a conductive adhesive.
其中， 所述高导热绝缘层上形成有金属电路和焊盘， 所述 LED灯珠或 LED芯片结合在焊 盘上， 而且所述焊盘与所述金属电路电性连接。 Wherein, the high thermal conductive insulating layer is formed with a metal circuit and a pad, the LED lamp bead or the LED chip is coupled to the bonding pad, and the pad is electrically connected to the metal circuit.
其中， 单颗 LED灯珠或者芯片的功率为 1W以上， 优选为 3W以上， 更优选为 5W以上。 其中， 所述树脂绝缘层为含有热固性树脂和固化剂的树脂固化物。 Among them, the power of a single LED lamp bead or chip is 1 W or more, preferably 3 W or more, and more preferably 5 W or more. The resin insulating layer is a cured resin containing a thermosetting resin and a curing agent.
其中， 所述树脂绝缘层为含有热固性树脂、 固化剂和无机填料的树脂固化物。 The resin insulating layer is a cured resin containing a thermosetting resin, a curing agent, and an inorganic filler.
其中， 所述热固性树脂选自环氧树脂、 有机硅树脂、 酚醛树脂或酰亚胺树脂中的一种。 其中， 所述无机填料选自二氧化硅、 氧化铝、 氮化铝、 氮化硅或氮化硼中的一种或几种。 其中， 所述树脂绝缘层的热导率为 0.5 W/mK以上， 优选导热率为 1.0 W/mK以上， 例如 Wherein, the thermosetting resin is one selected from the group consisting of an epoxy resin, a silicone resin, a phenol resin, and an imide resin. Wherein, the inorganic filler is selected from one or more of silicon dioxide, aluminum oxide, aluminum nitride, silicon nitride or boron nitride. Wherein, the thermal conductivity of the resin insulating layer is 0.5 W/mK or more, and preferably the thermal conductivity is 1.0 W/mK or more, for example
1.0~30 W/mK。 1.0~30 W/mK.
其中， 所述树脂绝缘层的厚度为 20~1000 μηι， 优选厚度范围为 20~500 μηι。 The resin insulating layer has a thickness of 20 to 1000 μm, and preferably has a thickness ranging from 20 to 500 μm.
与现有技术相比， 本发明的技术方案具有以下有益效果：
本发明通过在金属基板上设置不同导热系数以及不同材质的陶瓷绝缘板以及树脂绝缘 板， 可提供散热性得到显著改善的高可靠性的 LED封装用绝缘金属基板， 而良好的导热性能 够降低 LED灯珠以及芯片的点亮温度， 从而能够安装大功率更高亮度的 LED芯片； 此外本发 明还通过对金属基板的处理， 能够在金属基板的表面形成耐高压击穿的绝缘层， 例如特殊处 理的阳极氧化铝薄层或有机绝缘薄层， 进一步提高了封装结构的耐高压击穿性能， 从而实现 了 LED的更高亮度化。 Compared with the prior art, the technical solution of the present invention has the following beneficial effects: The present invention can provide a highly reliable insulating metal substrate for LED packaging with significantly improved heat dissipation by providing ceramic insulating plates and resin insulating plates of different thermal conductivity and different materials on a metal substrate, and good thermal conductivity can reduce LEDs. The lighting temperature of the lamp bead and the chip enables mounting of a high-power and higher-brightness LED chip; in addition, the present invention can form a high-voltage breakdown-resistant insulating layer on the surface of the metal substrate by processing the metal substrate, for example, special treatment. The thin layer of anodized aluminum or the thin layer of organic insulation further improves the high-voltage breakdown resistance of the package structure, thereby achieving higher brightness of the LED.
具体实施方式 detailed description
本发明所述的大功率 LED光源模块， 包括金属基板， 所述金属基板上形成有树脂绝缘层 和高导热绝缘层， 并且所述树脂绝缘层上形成有金属图案电路， 所述高导热绝缘层形成有金 属电路和大功率 LED灯珠或者芯片， 所述树脂绝缘层上的金属图案电路与所述高导热绝缘层 上的金属电路通过金属连接体连接。 所述 LED灯珠或 LED芯片通过波峰焊接、 回流焊接、 共 晶焊接或使用导电粘合剂与金属导线连接。 另外所述高导热绝缘层上还可以同时形成有金属 电路和焊盘， 所述 LED灯珠或 LED芯片结合在焊盘上， 而所述焊盘与所述金属电路电性连接。 所述的金属连接体例如可以为采用银、 金或铜的引线键合、 ***物、 桥接物等； 为了保证导 电性， 优选为银或银合金。 具体来说， 例如可以采用软钎焊、 硬钎焊、 高导热性粘结剂等来 进行电连接， 优选为软钎焊。 The high-power LED light source module of the present invention comprises a metal substrate, a resin insulating layer and a high thermal conductive insulating layer are formed on the metal substrate, and a metal pattern circuit is formed on the resin insulating layer, the high thermal conductive insulating layer A metal circuit and a high power LED lamp bead or chip are formed, and the metal pattern circuit on the resin insulating layer and the metal circuit on the high thermal conductive insulating layer are connected by a metal connecting body. The LED lamp bead or LED chip is connected to the metal wire by wave soldering, reflow soldering, eutectic soldering or using a conductive adhesive. In addition, a metal circuit and a pad may be simultaneously formed on the high thermal conductive insulating layer, and the LED lamp bead or the LED chip is coupled to the pad, and the pad is electrically connected to the metal circuit. The metal connecting body may be, for example, a wire bond, a bump, a bridge or the like using silver, gold or copper; in order to ensure conductivity, silver or a silver alloy is preferable. Specifically, for example, soldering, brazing, a highly thermally conductive adhesive or the like may be used for electrical connection, preferably soldering.
在本发明中， 所述金属基板可以由选自铝、 铜、 镍、 铁、 金、 银、 钛、 钼、 硅、 镁、 铅、 锡、 铟、 镓或者它们的合金材料制成。 作为优选地， 所述金属基板由铝、 铜、 铝合金或铜合 金制成。 金属基板的厚度可以依据实际需要加以选择， 例如可以从 0.1毫米至数十毫米。 在本 发明中所述基板优选使用铝或铝合金， 作为铝合金优选不含金属间化合物的铝合金。 具体来 说优选为杂质少、 99质量％以上的纯度的铝。 例如， 优选 99.99wt°/ Al、 99.0%A1等。 或者， 也可添加不易产生金属间化合物的元素。 例如可以添加适量镁的铝镁合金。 除了镁以外， 还 可选择铜或硅等固溶极限高的添加元素。 In the present invention, the metal substrate may be made of an alloy material selected from the group consisting of aluminum, copper, nickel, iron, gold, silver, titanium, molybdenum, silicon, magnesium, lead, tin, indium, gallium or alloys thereof. Preferably, the metal substrate is made of aluminum, copper, aluminum alloy or copper alloy. The thickness of the metal substrate can be selected according to actual needs, and can be, for example, from 0.1 mm to several tens of mm. In the present invention, the substrate is preferably aluminum or an aluminum alloy, and the aluminum alloy is preferably an aluminum alloy containing no intermetallic compound. Specifically, it is preferably aluminum having a purity of less than 99% by mass. For example, 99.99 wt ° / Al, 99.0% A1 and the like are preferable. Alternatively, an element which does not easily generate an intermetallic compound may be added. For example, an aluminum-magnesium alloy of an appropriate amount of magnesium can be added. In addition to magnesium, it is also possible to select an additive element having a high solid solution limit such as copper or silicon.
作为优选地， 所述金属基体经过表面处理工序， 所述的表面处理工序可包含粗化处理、 酸洗、 碱蚀刻等各种工序。 作为用于形成粗化表面的代表性方法， 可以举出对金属基板依次 实施机械性粗面化处理、 碱蚀刻处理、 采用酸的清洗处理和使用了电解液的电化学粗面化处
理等方法； 对金属基板实施多次机械性粗面化处理、 碱蚀刻处理、 采用酸的除垢处理和使用 了不同的电解液的电化学粗面化处理的方法； 但本发明并不限于这些。 作为酸可以为无机酸 和 /或有机酸， 所述的无机酸例如可以为硫酸、 盐酸、 硝酸、 磷酸等； 所述的有机酸例如可以 为羧酸或磺酸， 例如甲酸、 乙酸、 酒石酸、 草酸、 苹果酸、 抗坏血酸以及苯甲酸等。 作为常 用的碱例如可以为碱金属的氢氧化物， 例如氢氧化钠或氢氧化钾， 另外也可以使用四甲基氢 氧化铵、 三甲基 （羟乙基） 氢氧化铵等有机碱。 为了减少酸洗或碱蚀刻处理过程中金属基体 材料的蚀刻量， 在所述的碱溶液或酸溶液中可以含有耐蚀剂， 此外还可以含有表面活性剂以 及螯合剂等其它组分。 此外， 所述的表面处理， 还可以是在所述的金属基体表面形成电绝缘 的阳极氧化铝膜或电绝缘的有机膜层， 从而提高所述金属基体的耐高压击穿强度。 Preferably, the metal substrate is subjected to a surface treatment step, and the surface treatment step may include various steps such as roughening treatment, pickling, and alkali etching. As a typical method for forming a roughened surface, a mechanical roughening treatment, an alkali etching treatment, an acid cleaning treatment, and an electrochemical graining using an electrolytic solution are sequentially applied to the metal substrate. Method for performing a plurality of mechanical roughening treatments, alkali etching treatments, acid descaling treatments, and electrochemical graining treatment using different electrolyte solutions; however, the invention is not limited thereto These ones. The acid may be an inorganic acid and/or an organic acid, and the inorganic acid may be, for example, sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid or the like; and the organic acid may be, for example, a carboxylic acid or a sulfonic acid, such as formic acid, acetic acid, tartaric acid, Oxalic acid, malic acid, ascorbic acid, and benzoic acid. The base to be used may be, for example, an alkali metal hydroxide such as sodium hydroxide or potassium hydroxide, or an organic base such as tetramethylammonium hydroxide or trimethyl(hydroxyethyl)ammonium hydroxide. In order to reduce the etching amount of the metal base material during the pickling or alkali etching treatment, the alkali solution or the acid solution may contain a corrosion inhibitor, and may further contain other components such as a surfactant and a chelating agent. In addition, the surface treatment may further form an electrically insulating anodized aluminum oxide film or an electrically insulating organic film layer on the surface of the metal substrate to improve the high-voltage breakdown strength of the metal substrate.
在本发明中所述的大功率是指单颗 LED灯珠或者芯片的功率为 1W以上， 优选地为 3W以 上， 更为优选地， 为 5W以上。 而所述的 LED是指发光二级管， 其是指具有向二极管供电的接 触区域的发光半导体元件。 不同形式的半导体发光二极管可以由一种或多种 ΠΙ族元素和一种 或者多种 V族元素的 PN结 (III-V半导体)形成。 可用于 LED的 III-V半导体材料的例子包括： 氮 化物， 如氮化镓或者氮化铟镓； 以及磷化物如磷化铟镓。 也可以使用其它类型的 m-v材料， 还可以使用其它族的无机材料。 在本发明中， 所述的 LED可以呈封装或者非封装的结构， 包 括例如 LED管芯、 LED灯珠、 LED芯片和其它结构的 LED。 LED芯片 (COB) 是指直接安装在 电路基底上的 LED管芯。 术语 LED还包括用荧光粉封装或者与荧光粉相关的 LED, 其中， 荧 光粉将由 LED发出的光转变为不同波长的光。 与 LED的电连接可以通过引线接合、 卷带式自 动接合 (TAB)或者芯片倒装接合来形成。 LED可以是顶部发光的，例如 US5,998,935A中公开的 LED, 或者， LED可以是侧面发光的， 例如 US2004/233665 A1中公开的 LED。 在本发明中， 所述 LED可以选择为以任何所需波长发射， 如在红色、 绿色、 蓝色、 紫外或者远红外光谱区 中发射。 在 LED阵列中， 各 LED可以都在同一光谱区中发射， 或者可以在不同的光谱区中发 射。 不同的 LED可以用来产生不同的颜色， 其中， 由发光元件发射的光的颜色是可选择的。 对不同 LED的单独控制导致能够控制发射的光的颜色。 另外， 如果需要白色光， 则可以提供 大量发射不同颜色光的 LED, 其组合的效果是发射观看者感觉成是白色的光。 产生白色光的 另一方法是使用一个或者多个发射相对较短波长的光的 LED, 并且使用荧光粉波长转换器将
发射的光转换为白色光。 白色光是刺激人眼的光感受器以产生普通观看者认为是 "白色" 的 外观的光。 这种白色光可以偏向红色 (通常称为暖白色光)或者偏向蓝色 (通常称为冷白色光)。 The high power described in the present invention means that the power of a single LED lamp bead or chip is 1 W or more, preferably 3 W or more, and more preferably 5 W or more. The LED refers to a light-emitting diode, which refers to a light-emitting semiconductor element having a contact region for supplying power to a diode. Different forms of semiconductor light emitting diodes may be formed from one or more lanthanum elements and one or more PN junctions (III-V semiconductors) of group V elements. Examples of III-V semiconductor materials that can be used for LEDs include: nitrides such as gallium nitride or indium gallium nitride; and phosphides such as indium gallium phosphide. Other types of mv materials can also be used, as well as other families of inorganic materials. In the present invention, the LEDs may be in a packaged or unpackaged structure, including, for example, LED dies, LED lamp beads, LED chips, and other structured LEDs. A LED chip (COB) is an LED die that is mounted directly on a circuit substrate. The term LED also includes LEDs that are encapsulated with phosphors or associated with phosphors, wherein the phosphors convert light emitted by the LEDs into light of different wavelengths. Electrical connections to the LEDs can be formed by wire bonding, tape automated bonding (TAB), or chip flip bonding. The LEDs may be top-emitting, such as the LEDs disclosed in US 5,998,935 A, or the LEDs may be side-illuminated, such as the LEDs disclosed in US 2004/233665 A1. In the present invention, the LEDs can be selected to emit at any desired wavelength, such as in the red, green, blue, ultraviolet or far infrared spectral region. In an LED array, each LED can be emitted in the same spectral region or can be emitted in a different spectral region. Different LEDs can be used to produce different colors, wherein the color of the light emitted by the illuminating elements is selectable. Separate control of the different LEDs results in the ability to control the color of the emitted light. In addition, if white light is required, a large number of LEDs emitting light of different colors can be provided, the effect of which is to emit light that the viewer perceives to be white. Another way to produce white light is to use one or more LEDs that emit light of relatively short wavelengths, and use a phosphor wavelength converter The emitted light is converted to white light. White light is light that stimulates the human eye's photoreceptor to produce an appearance that the average viewer considers to be "white." This white light can be biased toward red (commonly referred to as warm white light) or blue (commonly referred to as cool white light).
在本发明中， 作为本发明中的所述高导热绝缘层的导热系数的范围为 30 500 W/mK， 作 为优选地， 所述高导热绝缘层的导热系数的范围为 50 500 W/mK。 所述高导热绝缘层的厚度 优选为 20~1000 μηι, 更优选地， 其厚度范围为 20~500 μηι。 所述高导热绝缘层可以由陶瓷材 料或非金属单晶材料制成， 作为陶瓷材料可以选择但不限于氧化锌、 氧化铍、 氧化铝、 二氧 化钛、 二氧化硅、 氮化硅、 蓝宝石、 氮化铝、 碳化硅、 氮氧化硅或氮氧化铝。 在本发明中所 述的陶瓷材料可以通过切割烧制的陶瓷板并焊接在本发明所述的金属基板上， 所述的焊接方 法例如可以是钎焊的方法， 例如软钎焊、 硬钎焊或活性钎焊等。 在本发明中所述的陶瓷材料 还可以通过原位形成方法制备得到， 例如通过真空镀膜方法， 例如常用的物理气相沉积方法 或化学气相沉积方法制备得到。作为物理气相沉积的例子例如蒸镀、溅射或离子镀沉积方法。 其中， 真空蒸发沉积具有简单便利、 操作容易、 成膜速度快以及效率高等优点， 是薄膜制备 中最为广泛使用的技术。 其原理是在真空环境下， 给待蒸发材料， 例如本发明中的陶瓷材料 提供足够的热量以获得蒸发所必需的蒸气压。在适当的温度下， 蒸发粒子在金属基体上凝结， 这样既可实现真空蒸发薄膜沉积。 作为蒸镀的例子例如可以选择电阻加热蒸镀、 闪烁蒸镀、 电子束蒸发、 激光蒸发、 电弧蒸发或者射频加热蒸发等。 溅射是指具有足够高能量的离子轰 击靶材表面使其中的原子发射出来， 溅射过程实际上入射粒子 (通常为离子)通过与靶材碰撞， 进行一系列能量交换的过程， 而入射粒子能量的 95%用于激励靶中的晶格热振动， 只有 5%左 右的能量是传递给溅射原子。 作为溅射沉积的例子例如通过， 通过中高频磁控溅射陶瓷靶材 并沉积在所述金属基板表面上， 溅射所获得的薄膜与基体结合良好， 而且薄膜纯度较高、 致 密性较好， 而且膜厚可控， 能够获得厚度均匀的薄膜。 作为溅射沉积的例子例如可以选择辉 光直流溅射、 磁控溅射、 射频溅射、 离子束溅射、 反应溅射等。 另外， 所述陶瓷材料还可以 通过离子镀方法沉积得到。 离子镀是指在真空条件下， 利用气体放电使气体或被蒸发物部分 离子化， 产生离子轰击效应， 最终将蒸发物或反应物沉积在基片上。 作为化学气相沉积方法 例如可以采用一般化学气相沉积方法或者等离子体增强化学气相沉积方法。 In the present invention, as the high thermal conductive insulating layer in the present invention, the thermal conductivity is in the range of 30 500 W/mK, and preferably, the high thermal conductive insulating layer has a thermal conductivity in the range of 50 500 W/mK. The thickness of the highly thermally conductive insulating layer is preferably 20 to 1000 μm, and more preferably, the thickness is in the range of 20 to 500 μm. The high thermal conductive insulating layer may be made of a ceramic material or a non-metallic single crystal material, and the ceramic material may be selected from, but not limited to, zinc oxide, cerium oxide, aluminum oxide, titanium dioxide, silicon dioxide, silicon nitride, sapphire, nitriding. Aluminum, silicon carbide, silicon oxynitride or aluminum oxynitride. The ceramic material described in the present invention may be welded to the metal substrate according to the present invention by cutting the fired ceramic plate, and the welding method may be, for example, a brazing method such as soldering or brazing. Or active brazing, etc. The ceramic material described in the present invention can also be produced by an in-situ formation method, for example, by a vacuum coating method such as a usual physical vapor deposition method or a chemical vapor deposition method. As an example of physical vapor deposition, for example, an evaporation, sputtering or ion plating deposition method. Among them, vacuum evaporation deposition has the advantages of simplicity, convenience, easy film formation, high film formation efficiency and high efficiency, and is the most widely used technology in film preparation. The principle is to provide sufficient heat to the material to be evaporated, such as the ceramic material of the present invention, in a vacuum environment to obtain the vapor pressure necessary for evaporation. At the appropriate temperature, the evaporating particles condense on the metal substrate, which allows vacuum evaporation of the film to be deposited. As an example of vapor deposition, for example, resistance heating evaporation, flash evaporation, electron beam evaporation, laser evaporation, arc evaporation, or radio frequency heating evaporation can be selected. Sputtering means that ions with a sufficiently high energy bombard the surface of the target to emit atoms therein. During the sputtering process, the incident particles (usually ions) actually collide with the target to perform a series of energy exchange processes, and the incident particles 95% of the energy is used to excite the lattice thermal vibrations in the target, and only about 5% of the energy is transferred to the sputter atoms. As an example of sputter deposition, for example, by sputtering a ceramic target by medium-high frequency magnetron sputtering and depositing on the surface of the metal substrate, the film obtained by sputtering is well bonded to the substrate, and the film has high purity and compactness. And the film thickness is controllable, and a film having a uniform thickness can be obtained. As examples of the sputter deposition, for example, glow direct current sputtering, magnetron sputtering, radio frequency sputtering, ion beam sputtering, reactive sputtering, or the like can be selected. Alternatively, the ceramic material may be deposited by an ion plating method. Ion plating refers to the partial ionization of a gas or a vaporized substance by a gas discharge under a vacuum condition to generate an ion bombardment effect, and finally deposits an evaporant or a reactant on a substrate. As the chemical vapor deposition method, for example, a general chemical vapor deposition method or a plasma enhanced chemical vapor deposition method can be employed.
在本发明中， 热导率为 0.5 W/mK以上， 更优选地， 其导热率为 1.0 W/mK以上， 例如可以
为 0.5 30 W/mK的范围。 如此可以将金属导电图案层以及焊点以及金属连接所产生的热量充 分地扩散。 所述树脂绝缘层的厚度优选为 20~1000 μηι， 更优选地， 其厚度范围为 20~500 μηι。 因为厚度如果小于 20 μηι， 则电绝缘性变得不充分， 如果大于 500μηι， 则散热性可能会受损， 尤其是厚度大于 1000 μηι时散热性能将显著降低。而所述树脂绝缘层为含有热固性树脂和固化 剂的树脂固化物。 作为优选地， 所述树脂绝缘层为含有热固性树脂、 固化剂和无机填料的树 脂固化物。 此外， 在用于形成绝缘层的固化性树脂组合物中， 还可以根据需要还可以使用催 化剂、 硅烷类偶联剂、 钛酸脂类偶联剂、 稳定剂以及固化促进剂等。 In the present invention, the thermal conductivity is 0.5 W/mK or more, and more preferably, the thermal conductivity is 1.0 W/mK or more, for example, It is in the range of 0.5 30 W/mK. In this way, the metal conductive pattern layer and the heat generated by the solder joint and the metal connection can be sufficiently diffused. The thickness of the resin insulating layer is preferably 20 to 1000 μm, and more preferably, the thickness thereof is 20 to 500 μm. Since the thickness is less than 20 μm, electrical insulation becomes insufficient, and if it is larger than 500 μm, heat dissipation may be impaired, especially when the thickness is more than 1000 μm, the heat dissipation performance is remarkably lowered. The resin insulating layer is a cured resin containing a thermosetting resin and a curing agent. Preferably, the resin insulating layer is a cured resin containing a thermosetting resin, a curing agent, and an inorganic filler. Further, in the curable resin composition for forming the insulating layer, a catalyst, a silane coupling agent, a titanate coupling agent, a stabilizer, a curing accelerator, or the like may be used as needed.
作为热固性树脂， 例如可以选择环氧树脂、 有机硅树脂、 酚醛树脂和酰亚胺树脂等。 从 导热性的角度考虑优选使用环氧树脂。 而作为环氧树脂， 优选使用可较为廉价地获得的双官 能性环氧树脂， 如， 双酚 Α二缩水甘油醚、 双酚 F二缩水甘油醚、 双酚 S二缩水甘油醚、 间苯 二酚二缩水甘油醚、 六氢双酚 A二缩水甘油醚、 聚丙二醇二缩水甘油醚、 新戊二醇二缩水甘 油醚、 邻苯二甲酸二缩水甘油酯、 二聚酸二缩水甘油酯等。 As the thermosetting resin, for example, an epoxy resin, a silicone resin, a phenol resin, an imide resin, or the like can be selected. It is preferred to use an epoxy resin from the viewpoint of thermal conductivity. Further, as the epoxy resin, a bifunctional epoxy resin which can be obtained at a relatively low cost, for example, bisphenol quinone diglycidyl ether, bisphenol F diglycidyl ether, bisphenol S diglycidyl ether, isophthalic acid is preferably used. Phenol diglycidyl ether, hexahydrobisphenol A diglycidyl ether, polypropylene glycol diglycidyl ether, neopentyl glycol diglycidyl ether, diglycidyl phthalate, dimer acid diglycidyl ester, and the like.
作为固化剂， 优选使用具有优异的机械性质和电性质的酸酐类或苯酚类， 并且为了确保 绝缘层的机械性质和介电性质， 优选加入加聚型固化剂。 作为加聚型固化剂， 优选使用可较 为廉价地获得的酸酐类或苯酚类， 酸酐类包括邻苯二甲酸酐、 四氢甲基邻苯二甲酸酐、 六氢 邻苯二甲酸酐、 偏苯三酸酐、 甲基降冰片烯二酸酐等， 苯酚类包括线型酚醛树脂、 邻甲酚线 型酚醛树脂、 双酚 A型线型酚醛树脂等。 As the curing agent, an acid anhydride or a phenol having excellent mechanical properties and electrical properties is preferably used, and in order to secure the mechanical properties and dielectric properties of the insulating layer, it is preferred to add an addition polymerization type curing agent. As the polyaddition type curing agent, an acid anhydride or a phenol which can be obtained at a relatively low cost is preferably used, and the acid anhydride includes phthalic anhydride, tetrahydromethyl phthalic anhydride, hexahydrophthalic anhydride, trimellitic anhydride, Methyl norbornene dianhydride, etc., and phenols include novolacs, o-cresol novolac resins, bisphenol A-type novolac resins, and the like.
此外， 为了促进所述热固性和加聚型固化剂的固化反应， 可以加入催化剂。 作为催化剂， 优选咪唑类， 如 2-甲基咪唑、 2- ^—烷基咪唑、 2-十七烷基咪唑、 1， 2-二甲基咪唑、 2-甲基 -4- 甲基咪唑、 2-苯基咪唑、 2-苯基 -4-甲基咪唑、 1-苄基 -2-甲基咪唑、 1-苄基 -2-苯基咪唑、 2， 3- 二氢 -1H-吡咯并 [1， 2-a]苯并咪唑、 2-苯基 -4， 5-二羟甲基咪唑等， 可以任意改变其添加量以 获得所希望的固化速度。 Further, in order to promote the curing reaction of the thermosetting and addition polymerization type curing agent, a catalyst may be added. As the catalyst, imidazoles such as 2-methylimidazole, 2-^-alkylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-methyl-4-methylimidazole, and the like are preferable. 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 2,3-dihydro-1H-pyrrole [1, 2-a] benzimidazole, 2-phenyl-4, 5-dimethylolimidazole, etc., may be arbitrarily changed in an amount to obtain a desired curing speed.
构成绝缘层的热固性树脂中的氯化物离子浓度较好是在 lOOOppm以下， 因为如果热固性 树脂组合物中的氯化物离子浓度在 lOOOppm以下， 则能够抑制因高温下或直流电压下的离子 性杂质的迁移而导致的电绝缘性的下降。 The chloride ion concentration in the thermosetting resin constituting the insulating layer is preferably 100 ppm or less, because if the chloride ion concentration in the thermosetting resin composition is 1000 ppm or less, ionic impurities due to high temperature or DC voltage can be suppressed. The decrease in electrical insulation caused by migration.
作为无机填料， 优选具有电绝缘性且热传导性良好的无机填料， 例如可以使用二氧化硅、
氧化铝、 氮化铝、 氮化硅、 氮化硼等。 为保持适当的流动性， 绝缘层中的无机填料的含量较 好为 5~15wt%。 无机填料的粒度较好是包含平均粒径为 0.6μη！〜 2.4μηι以及 5μη！〜 20μηι的两种 粒度。 通过将平均粒径较大的粗粒子和平均粒径较小的微粒子混合， 与单独使用各微粒时相 比， 可实现更多的填充， 能够获得良好的热传导性。 此外， 粒子形状可以是粉碎的、 球形的、 或鳞片状的。 As the inorganic filler, an inorganic filler having electrical insulating properties and good thermal conductivity is preferable, and for example, silica can be used. Alumina, aluminum nitride, silicon nitride, boron nitride, and the like. In order to maintain proper fluidity, the content of the inorganic filler in the insulating layer is preferably from 5 to 15% by weight. The particle size of the inorganic filler preferably comprises an average particle size of 0.6 μηη! ~ 2.4μηι and 5μη! ~ 20μηι of two particle sizes. By mixing coarse particles having a large average particle diameter and fine particles having a small average particle diameter, more filling can be achieved than when the respective fine particles are used alone, and good thermal conductivity can be obtained. Further, the particle shape may be pulverized, spherical, or scaly.
在本发明中， 所述的金属图案电路可以通过将用于形成绝缘层的固化性树脂组合物浆料 在金属基板上利用丝网印刷等方法进行图案印刷， 加热后形成半固化状态后， 粘贴金属箔， 之后， 进行加热， 形成基本上完全固化的状态的方法； 或者使用预先将绝缘层加工成半固化 状态的片状， 利用热压装置使其与用于形成金属图案电路的金属箔一体化的方法等。 作为金 属图案电路的形成方法， 例如可使用预先在金属箔上的规定部位涂布抗蚀剂层使其固化后， 利用湿蚀刻利用常规的氯化铜、 过氧化氢与硫酸的混合物等腐蚀剂的腐蚀； 此外还可以利用 干蚀刻方法， 例如利用溅射气体进行的干蚀刻工艺。 In the present invention, the metal pattern circuit can be patterned by a method such as screen printing on a metal substrate by using a curable resin composition slurry for forming an insulating layer, and then formed into a semi-cured state after heating, and then pasted. a metal foil, followed by heating to form a substantially fully cured state; or using a sheet in which the insulating layer is previously processed into a semi-cured state, using a hot pressing device to be integrated with a metal foil for forming a metal pattern circuit Methods and so on. As a method of forming the metal pattern circuit, for example, a resist layer may be applied to a predetermined portion of the metal foil to be solidified, and then a conventional etching agent such as copper chloride, a mixture of hydrogen peroxide and sulfuric acid may be used by wet etching. Corrosion; Further, a dry etching method such as a dry etching process using a sputtering gas can be utilized.
金属基板以及阳极氧化铝膜 Metal substrate and anodized aluminum film
在本实施例中所述金属基板选择为铝板基底， 例如 99.99wt。/ 纯铝， 并且在所述铝板基 底上形成有阳极氧化铝膜； 所述铝板基底的厚度为 2~20 mm , 阳极氧化铝膜的厚度为 10~20 μ ； 所述阳极氧化铝膜的绝缘耐久时间大于 1000小时， 所述的绝缘耐久时间是指在 50 V、 85%RH的条件下在阳极氧化铝膜上施加 100V的直流电压， 而将电阻值下降至 10ό Ω以下的时 间。 In the present embodiment, the metal substrate is selected to be an aluminum plate substrate, for example, 99.99 wt. / pure aluminum, and an anodized aluminum film is formed on the aluminum plate substrate; the thickness of the aluminum plate substrate is 2 to 20 mm, and the thickness of the anodized aluminum film is 10 to 20 μ; the insulation of the anodized aluminum film The endurance time is more than 1000 hours, and the insulation endurance time refers to a time when a direct current voltage of 100 V is applied to the anodized aluminum film under a condition of 50 V and 85% RH, and the resistance value is lowered to 10 ό Ω or less.
所述的阳极氧化膜的制备方法如下： 首先对铝板进行清洗和除垢， 然后在柠檬酸水溶液 中进行阳极氧化处理，所述柠檬酸水溶液含有： 20〜35g/L的柠檬酸， 3~5g/L的 6-氨酸乙酸， 0.5〜 1.0g/L的过氧化氢， 3~5g/L的柠檬酸三铵； 在液温为 10〜20°C、 电流密度为 0.5〜lA/dm2、 电 解处理 20〜30 min。 采用上述阳极氧化方法， 由于采用柠檬酸作为处理溶液， 并在其中添加 了适量的过氧化氢和 6-氨酸乙酸， 在阳极氧化处理时能够使得铝离子的供应充足， 从而能够 得到致密的阳极氧化铝膜， 在膜厚为 ΙΟμΓΤΐ及以上的条件下， 即使不经过封孔处理即可满足绝 缘耐久时间大于 1000小时的要求。 The anodic oxide film is prepared as follows: First, the aluminum plate is cleaned and descaled, and then anodized in an aqueous citric acid solution containing: 20 to 35 g/L of citric acid, 3 to 5 g. /L of 6-aminoacetic acid, 0.5~1.0g/L of hydrogen peroxide, 3~5g/L of triammonium citrate; at a liquid temperature of 10~20 ° C, current density of 0.5~lA/dm 2 , electrolytic treatment 20~30 min. According to the above anodizing method, since citric acid is used as the treatment solution, and an appropriate amount of hydrogen peroxide and 6-aminoacetic acid are added thereto, the supply of aluminum ions can be made sufficient in the anodizing treatment, thereby obtaining a dense anode. The aluminum oxide film can satisfy the requirement that the insulation endurance time is more than 1000 hours without the sealing treatment under the conditions of a film thickness of ΙΟμΓΤΐ or more.
实施例 1 Example 1
本实施例所述的阳极氧化膜的制备方法如下： 首先对铝板进行清洗和除垢， 然后在柠檬
酸水溶液中进行阳极氧化处理， 所述柠檬酸水溶液含有： 20g/L的柠檬酸， 3g/L的 6-氨酸乙酸， 1.0g/L的过氧化氢， 3g/L的柠檬酸三铵； 在液温为 10°C、 电流密度为 lA/dm2、 电解处理 20 min。 得到的致密阳极氧化铝膜绝缘耐久时间大于 1000小时。 The preparation method of the anodized film described in this embodiment is as follows: First, the aluminum plate is cleaned and descaled, and then in the lemon. Anodizing treatment is carried out in an aqueous acid solution containing: 20 g/L of citric acid, 3 g/L of 6-aminoacetic acid, 1.0 g/L of hydrogen peroxide, and 3 g/L of triammonium citrate; The liquid temperature was 10 ° C, the current density was 1 A/dm 2 , and the electrolytic treatment was carried out for 20 min. The obtained dense anodized aluminum film has an insulation durability time of more than 1000 hours.
实施例 2 Example 2
本实施例所述的阳极氧化膜的制备方法如下： 首先对铝板进行清洗和除垢， 然后在柠檬 酸水溶液中进行阳极氧化处理， 所述柠檬酸水溶液含有： 30g/L的柠檬酸， 4g/L的 6-氨酸乙酸， 1.0g/L的过氧化氢， 5g/L的柠檬酸三铵； 在液温为 20°C、 电流密度为 lA/dm2、 电解处理 20 min。 得到的致密阳极氧化铝膜绝缘耐久时间大于 1000小时。 The preparation method of the anodized film described in this embodiment is as follows: First, the aluminum plate is cleaned and descaled, and then anodized in an aqueous solution of citric acid containing: 30 g/L of citric acid, 4 g/ L-6-aminoacetic acid, 1.0 g/L hydrogen peroxide, 5 g/L triammonium citrate; at a liquid temperature of 20 ° C, a current density of 1 A/dm 2 , and an electrolytic treatment for 20 min. The obtained dense anodized aluminum film has an insulation durability time of more than 1000 hours.
实施例 3 Example 3
本实施例所述的阳极氧化膜的制备方法如下： 首先对铝板进行清洗和除垢， 然后在柠檬 酸水溶液中进行阳极氧化处理， 所述柠檬酸水溶液含有： 35g/L的柠檬酸， 5g/L的 6-氨酸乙酸， 1.0g/L的过氧化氢， 5g/L的柠檬酸三铵； 在液温为 10°C、 电流密度为 lA/dm2、 电解处理 30 min。 得到的致密阳极氧化铝膜绝缘耐久时间大于 1500小时。 The preparation method of the anodized film described in this embodiment is as follows: First, the aluminum plate is cleaned and descaled, and then anodized in an aqueous citric acid solution containing: 35 g/L of citric acid, 5 g/ L-6-aminoacetic acid, 1.0 g/L hydrogen peroxide, 5 g/L triammonium citrate; at a liquid temperature of 10 ° C, a current density of 1 A/dm 2 , and electrolytic treatment for 30 min. The obtained dense anodized aluminum film has an insulation durability time of more than 1500 hours.
对比例 1 Comparative example 1
对铝板进行酸洗除垢， 然后在草酸溶液中进行阳极氧化处理， 所述草酸溶液中含有 35g/L 的草酸， 5g/L的草酸铝； 在液温为 20°C、 电流密度为 lA/dm2、 电解处理 30 min; 然后在硼酸 水溶液中进行封闭处理， 所述硼酸水溶液中含有 0.5mol/L的硼酸和 0.2mol/L的四硼酸钠； 封孔 条件为液温 20°C、 电流密度 lA/dm2、 电解处理时间 5分钟， 其绝缘耐久时间为 300~500小时。 对比例 2 The aluminum plate is pickled and descaled, and then anodized in an oxalic acid solution containing 35 g/L of oxalic acid and 5 g/L of aluminum oxalate; the liquid temperature is 20 ° C, and the current density is 1 A/ Dm 2 , electrolytic treatment for 30 min; then blocking treatment in aqueous boric acid solution containing 0.5 mol/L boric acid and 0.2 mol/L sodium tetraborate; sealing condition is liquid temperature 20 ° C, current The density is 1A/dm 2 , the electrolysis treatment time is 5 minutes, and the insulation endurance time is 300 to 500 hours. Comparative example 2
对铝板进行酸洗除垢， 然后在硫酸溶液中进行阳极氧化处理， 所述硫酸溶液中含有 35g/L 的草酸， 5g/L的硫酸铝； 在液温为 20°C、 电流密度为 lA/dm2、 电解处理 30 min; 然后在硼酸 水溶液中进行封闭处理， 所述硼酸水溶液中含有 0.5mol/L的硼酸和 0.2mol/L的四硼酸钠； 封孔 条件为液温 20°C、 电流密度 lA/dm2、 电解处理时间 5分钟， 其绝缘耐久时间为 250~400小时。 髙导热绝缘层 The aluminum plate is pickled and descaled, and then anodized in a sulfuric acid solution containing 35 g/L of oxalic acid and 5 g/L of aluminum sulfate; at a liquid temperature of 20 ° C, a current density of 1 A/ Dm 2 , electrolytic treatment for 30 min; then blocking treatment in aqueous boric acid solution containing 0.5 mol/L boric acid and 0.2 mol/L sodium tetraborate; sealing condition is liquid temperature 20 ° C, current The density is 1A/dm 2 , the electrolysis treatment time is 5 minutes, and the insulation endurance time is 250 to 400 hours.髙 Thermal insulation
在本发明中， 所述高导热绝缘层的导热系数的范围为 50 500 W/mK。 所述高导热绝缘层 厚度范围为 20 500 μηι, 例如为 50μηι。 所述高导热绝缘层可以由陶瓷材料或非金属单晶材料 制成。 作为陶瓷材料可以选择但不限于氧化锌、 氧化铍、 氧化铝、 二氧化钛、 二氧化硅、 氮
化硅、 蓝宝石、 氮化铝、 碳化硅、 氮氧化硅或氮氧化铝。 在本发明中所述的陶瓷材料可以通 过切割烧制的陶瓷板并焊接在本发明所述的金属基板上， 所述的焊接方法例如可以是钎焊的 方法， 例如软钎焊、 硬钎焊或活性钎焊等， 优选使用活性钎焊， 所述活性钎焊的成分例如可 以选择 2.25wt°/ Ti、 2.00wt°/ Al、 3.00wt°/ Si和余量的 Cu; 例如可以选择 1.25wt°/ Ti、 32.250wt°/ Cu和余量的 Ag; 例如可以选择 1.25wt°/ Ti、 12.50wt°/ In、 27.25wt°/ Cu和余 量的 Ag。 此外， 所述的高导热绝缘层还可以采用蒸镀、 溅射镀或反应离子镀以及化学气相沉 积的方法制备得到，例如采用申请人为苏州晶品光电科技有限公司，公开号为 CN103354221A、 CN103353065A、 CN103354219A、 CN103354222A CN103354698A、 CN103354220A、 CN103354269A、 CN103354697A、 CN103354699A、 CN103354254A、 CN103327736A、 CN103327735A、 CN103325921A、 CN103338588A， 或者公告号为 CN203340413U、 CN203339213U CN203339139U、 CN203340409U、 CN203340407U、 CN203340408U、 CN203339224U CN203336288U、 CN203339140U和 CN203339145U中记载的制备方法， 并且 上述文献记载在此， 作为参考。 In the present invention, the high thermal conductive insulating layer has a thermal conductivity in the range of 50 500 W/mK. The high thermal conductive insulating layer has a thickness in the range of 20 500 μηι, for example, 50 μηι. The highly thermally conductive insulating layer may be made of a ceramic material or a non-metallic single crystal material. As a ceramic material, it can be selected but not limited to zinc oxide, cerium oxide, aluminum oxide, titanium dioxide, silicon dioxide, nitrogen. Silicon, sapphire, aluminum nitride, silicon carbide, silicon oxynitride or aluminum oxynitride. The ceramic material described in the present invention may be welded to the metal substrate according to the present invention by cutting the fired ceramic plate, and the welding method may be, for example, a brazing method such as soldering or brazing. Or active brazing or the like, preferably using active brazing, the active brazing composition may be, for example, 2.25 wt / Ti, 2.00 wt / Al, 3.00 wt / Si and the balance of Cu; for example, 1.25 wt ° / Ti, 32.250 wt ° / Cu and the balance of Ag; for example, 1.25 wt ° / Ti, 12.50 wt ° / In, 27.25 wt ° / Cu and the balance of Ag can be selected. In addition, the high thermal conductive insulating layer can also be prepared by evaporation, sputtering or reactive ion plating and chemical vapor deposition. For example, the applicant is Suzhou Jingpin Optoelectronics Technology Co., Ltd., the publication number is CN103354221A, CN103353065A, Preparation methods described in CN103354219A, CN103354222A, CN103354698A, CN103354220A, CN103354269A, CN103354697A, CN103354699A, CN103354254A, CN103327736A, CN103327735A, CN103325921A, CN103338588A, or the publication numbers CN203340413U, CN203339213U, CN203339139U, CN203340409U, CN203340407U, CN203340408U, CN203339224U, CN203336288U, CN203339140U, and CN203339145U, The above documents are hereby incorporated by reference.
树脂绝缘层 Resin insulation
在本发明中， 所述树脂绝缘层的导热率可选择为 0.5 30 W/mK, 并且所述树脂绝缘层的 厚度范围优选为 20~500 μηι。 In the present invention, the thermal conductivity of the resin insulating layer may be selected to be 0.5 30 W/mK, and the thickness of the resin insulating layer is preferably in the range of 20 to 500 μη.
所述树脂绝缘层由含有热固性树脂、 固化剂和无机填料的固化性树脂组合物形成， 此外， 在用于形成绝缘层的固化性树脂组合物中， 还可以根据需要还可以使用其它组分等。 形成条 件例如可以在 160~ 180 °C的条件下固化 30~ 180秒。作为优选地，所述的固化性树脂组合物含有 55~60wt%的双酚 F二缩水甘油醚、 12.5~15.0wt%的乙烯基三乙氧基硅烷、 8.0~10.0wt%的苯烯 酸 -2-羟基乙酯、 3.2~5.0wt%的三甲基硅咪唑、 2.5~3.0wt%的邻苯二甲酸酐、 0.5~1.0wt°/ 2， 6-二叔丁基对甲酚， 和 3~8wt%的平均粒径为 2.0μηι的氧化铝微粒以及 3~8wt%的平均粒径为 5.0μηι的氧化铝微粒。 The resin insulating layer is formed of a curable resin composition containing a thermosetting resin, a curing agent, and an inorganic filler. Further, in the curable resin composition for forming an insulating layer, other components may be used as needed. . The forming conditions can be cured, for example, at 160 to 180 ° C for 30 to 180 seconds. Preferably, the curable resin composition contains 55 to 60% by weight of bisphenol F diglycidyl ether, 12.5 to 15.0% by weight of vinyltriethoxysilane, and 8.0 to 10.0% by weight of benzoic acid- 2-hydroxyethyl ester, 3.2 to 5.0 wt% trimethylsilyl imidazole, 2.5 to 3.0 wt% phthalic anhydride, 0.5 to 1.0 wt/2,6-di-tert-butyl-p-cresol, and 3 ~8 wt% of alumina fine particles having an average particle diameter of 2.0 μm and 3 to 8 wt% of alumina fine particles having an average particle diameter of 5.0 μm.
实施例 4 Example 4
本实施例所述的固化性树脂组合物含有 55wt%的双酚 F二缩水甘油醚、 15.0wt%的乙烯基 三乙氧基硅烷、 10.0wt/ 苯烯酸 -2-羟基乙酯、 5.0wt%的三甲基硅咪唑、 2.5wt%的邻苯二甲
酸酐、 1.0wt°/ 2， 6-二叔丁基对甲酚，和 5.5wt%的平均粒径为 2.0μηι的氧化铝微粒以及 6.0wt% 的平均粒径为 5.0μηι的氧化铝微粒。制备的树脂绝缘层厚度为 50μηι时， 测得其热导率为 20 25 实施例 5 The curable resin composition of the present embodiment contains 55 wt% of bisphenol F diglycidyl ether, 15.0 wt% of vinyl triethoxysilane, 10.0 wt / of benzoic acid-2-hydroxyethyl ester, 5.0 wt. % trimethylsilyl imidazole, 2.5 wt% phthalic acid An acid anhydride, 1.0 wt ° / 2, 6-di-tert-butyl-p-cresol, and 5.5 wt% of alumina fine particles having an average particle diameter of 2.0 μm and 6.0 wt% of alumina fine particles having an average particle diameter of 5.0 μm. When the thickness of the prepared resin insulating layer was 50 μm, the thermal conductivity was measured to be 20 25 .
本实施例所述的固化性树脂组合物含有 60wt%的双酚 F二缩水甘油醚、 12.5wt/ 乙烯基 三乙氧基硅烷、 8wt/ 苯烯酸 -2-羟基乙酯、 3.2wt%的三甲基硅咪唑、 3.0wt%的邻苯二甲酸 酐、 1.0wt°/ 2， 6-二叔丁基对甲酚， 和 6.3wt%的平均粒径为 2.0μηι的氧化铝微粒以及 6.0wt% 的平均粒径为 5.0μηι的氧化铝微粒。制备的树脂绝缘层厚度为 50μηι时， 测得其热导率为 22~26 实施例 6 The curable resin composition of the present embodiment contains 60% by weight of bisphenol F diglycidyl ether, 12.5 wt/vinyltriethoxysilane, 8 wt/benzoic acid-2-hydroxyethyl ester, 3.2 wt% Trimethylsilyl imidazole, 3.0 wt% phthalic anhydride, 1.0 wt/2,6-di-tert-butyl-p-cresol, and 6.3 wt% alumina particles having an average particle diameter of 2.0 μm and 6.0 wt % of alumina particles having an average particle diameter of 5.0 μm. When the thickness of the prepared resin insulating layer is 50 μm, the thermal conductivity is 22 to 26. Example 6
本实施例所述的固化性树脂组合物含有 58wt%的双酚 F二缩水甘油醚、 15wt/ 乙烯基三 乙氧基硅烷、 10wt/ 苯烯酸 -2-羟基乙酯、 5wt%的三甲基硅咪唑、 3.0wt%的邻苯二甲酸酐、 1.0wt°/ 2， 6-二叔丁基对甲酚，和 4wt%的平均粒径为 2.0μηι的氧化铝微粒以及 4wt/ 平均粒 径为 5.0μηι的氧化铝微粒。 制备的树脂绝缘层厚度为 50μηι时， 测得其热导率为 18~22W/mK。 实施例 7 The curable resin composition of the present embodiment contains 58 wt% of bisphenol F diglycidyl ether, 15 wt/vinyl triethoxysilane, 10 wt/benzoic acid-2-hydroxyethyl ester, and 5 wt% of trimethyl Silyimidazole, 3.0 wt% phthalic anhydride, 1.0 wt/2,6-di-tert-butyl-p-cresol, and 4 wt% alumina particles having an average particle diameter of 2.0 μm and 4 wt/average particle diameter It is an alumina fine particle of 5.0 μm. When the thickness of the prepared resin insulating layer was 50 μm, the thermal conductivity was measured to be 18 to 22 W/mK. Example 7
本实施例所述的固化性树脂组合物含有 78wt%的双酚 F二缩水甘油醚、 5wt%的 2-甲基咪 唑、 3.0wt%的邻苯二甲酸酐、 1.0wt/ 2， 6-二叔丁基对甲酚， 禾口 6.5wt%的平均粒径为 2.0μηι 的氧化铝微粒以及 6.5wt%的平均粒径为 5.0μηι的氧化铝微粒。 制备的树脂绝缘层厚度为 50μηι 时， 测得其热导率为 15~20W/mK。 The curable resin composition of the present embodiment contains 78% by weight of bisphenol F diglycidyl ether, 5% by weight of 2-methylimidazole, 3.0% by weight of phthalic anhydride, 1.0 wt/ 2, 6-two. Tert-butyl-p-cresol, 6.5 wt% of alumina fine particles having an average particle diameter of 2.0 μm and 6.5 wt% of alumina fine particles having an average particle diameter of 5.0 μm. When the thickness of the prepared resin insulating layer is 50 μm, the thermal conductivity is 15 to 20 W/mK.
在本发明中所述的树脂绝缘层除了需要满足所需的导热率外， 还应具有优异的耐热变色 性。 为了检测上述固化性树脂组合物的耐热变色性能， 将所述的固化性树脂组合物， 在 170 。C、 8N/mm2以及固化时间为 120秒的条件下加工成直径为 50 mm X厚度为 3mm的圆盘作为样 品， 然后在 150°C的条件下放置 24小时， 利用肉眼观察其耐热变色性， 发现实施例 4-6所述的 样品没有发现变色现象， 而实施例 7所述的样品稍有变色或发生了变色。 The resin insulating layer described in the present invention should have excellent heat discoloration resistance in addition to the required thermal conductivity. In order to detect the heat-resistant discoloration performance of the curable resin composition, the curable resin composition was 170. C, 8 N/mm 2 and a curing time of 120 seconds were processed into a disc having a diameter of 50 mm and a thickness of 3 mm as a sample, and then placed at 150 ° C for 24 hours, and the heat-resistant color was observed by naked eyes. The samples described in Examples 4-6 were found to be free from discoloration, while the samples described in Example 7 were slightly discolored or discolored.
金属图案电路 Metal pattern circuit
根据实际需要， 在所述的树脂绝缘层,或者在所述的树脂绝缘层以及所述高导热绝缘层上
均形成有金属图案电路。 在所述缘层上可以通过粘结或按压铜箔形成导电铜膜， 或者可以通 过溅射、 化学镀 （需要事先进行活化） 形成铜膜。 所述铜膜的厚度例如为 2〜5μηι厚， 然后在 带所述铜膜上涂上光刻胶， 再在光刻机上利用金属光刻掩模版进行光刻， 再经显影形成金属 图案电路， 或者， 采用丝网印刷的方法直接形成导电金属层的图形； 经烘烤固化后， 再用湿 法蚀刻工艺对所述铝层进行蚀刻， 蚀刻后即可得到所述的金属图案电路。 According to actual needs, on the resin insulating layer, or on the resin insulating layer and the high thermal conductive insulating layer A metal pattern circuit is formed. A conductive copper film may be formed on the edge layer by bonding or pressing a copper foil, or a copper film may be formed by sputtering or electroless plating (requiring activation in advance). The thickness of the copper film is, for example, 2 to 5 μm thick, and then the photoresist is coated on the copper film, and then photolithography is performed on the photolithography machine using a metal photolithography mask, and then developed to form a metal pattern circuit, or The pattern of the conductive metal layer is directly formed by screen printing; after baking and curing, the aluminum layer is etched by a wet etching process, and the metal pattern circuit is obtained after etching.
工业实用性 Industrial applicability
本发明所述的大功率 LED光源模块， 具有改进的散热性能和可靠性， 在工业领域能够广泛 应用于路灯照明、 工矿以及公共场所等。 The high-power LED light source module of the invention has improved heat dissipation performance and reliability, and can be widely applied in street lighting, industrial and mining, and public places in the industrial field.
对于本领域的普通技术人员而言，具体实施例只是结合附图对本发明进行了示例性描述， 显然本发明具体实现并不受上述方式的限制， 只要采用了本发明的方法构思和技术方案进行 的各种非实质性的改进， 或未经改进将本发明的构思和技术方案直接应用于其它场合的， 均 在本发明的保护范围之内。
The present invention is exemplarily described with reference to the accompanying drawings, and it is obvious that the present invention is not limited by the above embodiments, as long as the method concept and technical solution of the present invention are adopted. All of the non-substantial improvements, or the direct application of the concepts and technical solutions of the present invention to other applications without modification, are within the scope of the present invention.
Claims
1. 一种大功率 LED光源模块， 包括金属基板， 其特征在于： 所述金属基板上形成有树脂 绝缘层和高导热绝缘层， 并且所述树脂绝缘层上形成有金属图案电路， 所述高导热绝缘层形 成有金属电路和大功率 LED灯珠或者芯片， 所述树脂绝缘层上的金属图案电路与所述高导热 绝缘层上的金属电路通过金属连接体连接。 A high-power LED light source module, comprising a metal substrate, wherein: a metal insulating layer and a high thermal conductive insulating layer are formed on the metal substrate, and a metal pattern circuit is formed on the resin insulating layer, the high The thermally conductive insulating layer is formed with a metal circuit and a high power LED lamp bead or chip, and the metal pattern circuit on the resin insulating layer and the metal circuit on the high thermal conductive insulating layer are connected by a metal connecting body.
2. 根据权利要求 1所述的大功率 LED光源模块， 其特征在于： 所述金属基板上具有多个 树脂绝缘层和多个高导热绝缘层； 并且所述树脂绝缘层之间相邻设置或者间隔设置； 所述高 导热绝缘层之间相邻或者间隔设置； 所述树脂绝缘层与所述高导热绝缘层之间相邻设置或者 间隔设置。 2. The high power LED light source module according to claim 1, wherein: the metal substrate has a plurality of resin insulating layers and a plurality of high thermal conductive insulating layers; and the resin insulating layers are adjacently disposed or The high thermal conductive insulating layers are adjacent or spaced apart from each other; the resin insulating layer and the high thermal conductive insulating layer are disposed adjacent to each other or at intervals.
3. 根据权利要求 1所述的大功率 LED光源模块， 其特征在于： 所述高导热绝缘层上结合 封装好的 LED灯珠或者未封装的 LED芯片， 芯片上结合荧光粉。 3. The high-power LED light source module according to claim 1, wherein: the high thermal conductive insulating layer is combined with a packaged LED lamp bead or an unpackaged LED chip, and the phosphor is combined on the chip.
4. 根据权利要求 1所述的大功率 LED光源模块，其特征在于：所述 LED光源上结合二次光 学元件。 4. The high power LED light source module according to claim 1, wherein the LED light source is combined with a secondary optical element.
5. 根据权利要求 2所述的大功率 LED光源模块， 其特征在于： 所述金属连接体为采用银、 金或铜的引线、 ***物和 /或桥接物。 5. The high power LED light source module according to claim 2, wherein the metal connecting body is a lead, a bump and/or a bridge using silver, gold or copper.
6. 根据权利要求 5所述的大功率 LED光源模块， 其特征在于： 所述金属基板由铝、 铜、 铝合金或铜合金制成； 或者所述金属基板由镀覆有铝的钢制成， 所述的钢选自低碳钢、 耐热 钢或不锈钢中的一种。 6. The high power LED light source module according to claim 5, wherein: the metal substrate is made of aluminum, copper, aluminum alloy or copper alloy; or the metal substrate is made of steel plated with aluminum The steel is selected from one of low carbon steel, heat resistant steel or stainless steel.
7. 根据权利要求 1-6任一项所述的大功率 LED光源模块， 其特征在于： 所述金属基体经 过表面处理工序， 所述的表面处理工序包含粗化处理、 酸洗或者碱蚀刻工序中的任意一种。 The high-power LED light source module according to any one of claims 1 to 6, wherein: the metal substrate is subjected to a surface treatment process, and the surface treatment step comprises a roughening treatment, an acid cleaning or an alkali etching process. Any of them.
8. 根据权利要求 1-6任一项所述的大功率 LED光源模块， 其特征在于： 所述高导热绝缘 层由陶瓷材料或非金属单晶材料制成。 The high power LED light source module according to any one of claims 1 to 6, wherein the high thermal conductive insulating layer is made of a ceramic material or a non-metallic single crystal material.
9. 根据权利要求 1所述的大功率 LED光源模块， 其特征在于： 所述高导热绝缘层的导热 率为 50~500 W/mK, 厚度为 20~500 μηι。 9. The high power LED light source module according to claim 1, wherein the high thermal conductive insulating layer has a thermal conductivity of 50 to 500 W/mK and a thickness of 20 to 500 μm.
10. 根据权利要求 1所述的大功率 LED光源模块， 其特征在于： 所述树脂绝缘层的热导率 为 0.5 -30 W/mK, 厚度为 20~500 μηι。
10. The high power LED light source module according to claim 1, wherein the resin insulating layer has a thermal conductivity of 0.5 to 30 W/mK and a thickness of 20 to 500 μm.
11. 根据权利要求 9所述的大功率 LED光源模块， 其特征在于： 所述树脂绝缘层由含有热 固性树脂、 固化剂和无机填料的热固性树脂组合物形成。
The high-power LED light source module according to claim 9, wherein the resin insulating layer is formed of a thermosetting resin composition containing a thermosetting resin, a curing agent, and an inorganic filler.
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| WO2010021089A1 (en) * | 2008-08-21 | 2010-02-25 | パナソニック株式会社 | Light source for lighting |
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| CN201957336U (en) * | 2010-12-07 | 2011-08-31 | 点量科技股份有限公司 | High-heat-dissipation-performance circuit carrier board and relevant luminescent module |
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| CN201096332Y (en) * | 2007-10-23 | 2008-08-06 | 宁波双林电子有限公司 | LED lighting lamp directly switching 220v alternating-current electric network |
| WO2010021089A1 (en) * | 2008-08-21 | 2010-02-25 | パナソニック株式会社 | Light source for lighting |
| CN101937910A (en) * | 2009-06-30 | 2011-01-05 | 株式会社日立高新技术 | LED light source, its manufacturing method, and LED-based photolithography apparatus and method |
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