WO2015122446A1 - Liaison cuivre/céramique et substrat de module de puissance - Google Patents

Liaison cuivre/céramique et substrat de module de puissance Download PDF

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WO2015122446A1
WO2015122446A1 PCT/JP2015/053792 JP2015053792W WO2015122446A1 WO 2015122446 A1 WO2015122446 A1 WO 2015122446A1 JP 2015053792 W JP2015053792 W JP 2015053792W WO 2015122446 A1 WO2015122446 A1 WO 2015122446A1
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Prior art keywords
copper
active element
ceramic
layer
oxide layer
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PCT/JP2015/053792
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English (en)
Japanese (ja)
Inventor
伸幸 寺▲崎▼
長友　義幸
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三菱マテリアル株式会社
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Priority claimed from JP2014052594A external-priority patent/JP5825380B2/ja
Priority claimed from JP2014136567A external-priority patent/JP5828352B2/ja
Application filed by 三菱マテリアル株式会社 filed Critical 三菱マテリアル株式会社
Priority to EP15749540.9A priority Critical patent/EP3106447B1/fr
Priority to CN201580008014.0A priority patent/CN105980334B/zh
Priority to US15/117,935 priority patent/US10103035B2/en
Priority to KR1020167021843A priority patent/KR101758586B1/ko
Publication of WO2015122446A1 publication Critical patent/WO2015122446A1/fr

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    • C—CHEMISTRY; METALLURGY
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    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/025—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of glass or ceramic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/04—Ceramic interlayers
    • C04B2237/06—Oxidic interlayers
    • C04B2237/068—Oxidic interlayers based on refractory oxides, e.g. zirconia
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
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    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/60—Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • C—CHEMISTRY; METALLURGY
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
    • C—CHEMISTRY; METALLURGY
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates

Definitions

  • the present invention relates to a copper / ceramic bonded body formed by bonding a copper member made of copper or a copper alloy and a ceramic member, and a power module substrate formed of the copper / ceramic bonded body.
  • This application is filed with Japanese Patent Application No. 2014-024410 filed in Japan on February 12, 2014, Japanese Patent Application No. 2014-052594 filed in Japan on March 14, 2014, and July 2, 2014. Furthermore, priority is claimed based on Japanese Patent Application No. 2014-136567 filed in Japan, the contents of which are incorporated herein.
  • the active element oxide layer may contain P.
  • the active element oxide layer containing P is easily formed on the surface of the ceramic member by bonding with the active element and reacting with oxygen. Therefore, the copper member and the ceramic member can be reliably bonded even under low temperature conditions. Thereby, it becomes possible to suppress the thermal deterioration of the ceramic member at the time of joining.
  • a Cu—Al eutectic layer may be formed between the active element oxide layer and the copper member.
  • the copper member and the ceramic member can be reliably bonded even under low temperature conditions.
  • the reaction between Al and Cu results in the formation of a Cu—Al eutectic layer between the active element oxide layer and the copper member.
  • the thickness t of the active element oxide layer 30 is determined by observing the bonding interface at a magnification of 200,000 times using a transmission electron microscope, and oxidizing the active element at a location where the active element concentration is in the range of 35 at% to 70 at%. It is regarded as the physical layer 30 and is obtained by measuring its thickness.
  • the concentration (at%) of the active element is measured with an EDS (energy dispersive X-ray spectrometer) attached to the transmission electron microscope, and the active element concentration when the sum of the P concentration, the active element concentration, and the O concentration is 100 is used. Concentration.
  • the thickness of the active element oxide layer was an average value of five fields of view.
  • the heat sink 51 is bonded to the other surface side of the metal layer 13 of the power module substrate 10 (heat sink bonding step S04).
  • the power module substrate 10 and the heat sink 51 are laminated via the brazing material 28, pressurized in the laminating direction, and inserted into a vacuum furnace for brazing.
  • the metal layer 13 of the power module substrate 10 and the top plate portion 52 of the heat sink 51 are joined.
  • the brazing material 28 for example, an Al—Si based brazing foil having a thickness of 20 to 110 ⁇ m (for example, Al-10 mass% Si brazing foil) can be used, and the brazing temperature is set in the heat treatment step S03. Set to a lower temperature than the temperature condition in.
  • the ceramic substrate 11 made of AlN and the copper plate 22 are held at a high temperature with Ti interposed (for example, 790 ° C. to 850 ° C.), nitrogen in the ceramic substrate 11 reacts with Ti, and TiN becomes Although it is formed, in the first embodiment, the low temperature condition (in the range of 600 ° C. or more and 650 ° C. or less) is used in the heat treatment step S03, so that TiN is not formed and the active element oxide layer 30 is formed. (Ti—O layer) is formed.
  • the ceramic substrate 11 and the circuit layer 12 are joined using a Cu—Al based brazing material containing Al, and the Al in the Cu—Al based brazing material is Cu.
  • a liquid phase is generated under a low temperature condition, and the above-described Cu—Al eutectic layer 131 is formed.
  • the thickness t e of the Cu-Al eutectic layer 131 is equal to or greater than 10 [mu] m, the liquid phase is sufficiently formed as described above, to reliably bond the ceramic substrate 11 and the circuit layer 12 Can do. Further, since the thickness t e of the Cu-Al eutectic layer 131 is a 60 ⁇ m or less, it is possible to suppress the bonding interface area becomes brittle, it is possible to ensure a high thermal cycle reliability.
  • the active element oxide layer 230 can be reliably formed, and the ceramic substrate 211 and the circuit layer 12 can be reliably bonded. Further, since the P content is 10 mass% or less, the active element oxide layer 230 is not excessively hardened, and for example, the load on the ceramic substrate due to the thermal stress at the time of a cold cycle load can be reduced. It is possible to prevent the reliability of the interface from decreasing.
  • the concentration and thickness of the active element of the active element oxide layer 230 and the P content are measured by the same method as the concentration and thickness of the active element and the P content of the active element oxide layer 30 of the first embodiment. Is done.
  • the heat sink 51 is bonded to the other surface side of the metal layer 13 of the power module substrate 210 (heat sink bonding step S04).
  • the power module substrate 210 and the heat sink 51 are laminated through the brazing material 28, pressurized in the laminating direction, and inserted into a vacuum furnace for brazing.
  • the metal layer 13 of the power module substrate 210 and the top plate portion 52 of the heat sink 51 are joined.
  • the brazing material 28 for example, an Al—Si based brazing foil having a thickness of 20 to 110 ⁇ m (for example, Al-10 mass% Si brazing foil) can be used, and the brazing temperature is set in the heat treatment step S03. Set to a lower temperature than the temperature condition in.
  • alumina Al 2 O 3 purity of 98 mass% or more
  • 92% alumina Al 2 O 3 purity of 92 mass% or more
  • Other aluminas such as 96% alumina (Al 2 O 3 purity 96 mass% or more) and zirconia reinforced alumina may be applied.
  • Ti has been described as an example of the active element, the present invention is not limited to this, and other active elements such as Zr and Hf may be applied.
  • the heat sink is not limited to those exemplified in the third embodiment, and the structure of the heat sink is not particularly limited. Further, a buffer layer made of aluminum, an aluminum alloy, or a composite material containing aluminum (for example, AlSiC) may be provided between the top plate portion of the heat sink or the heat radiating plate and the metal layer.
  • a buffer layer made of aluminum, an aluminum alloy, or a composite material containing aluminum (for example, AlSiC) may be provided between the top plate portion of the heat sink or the heat radiating plate and the metal layer.
  • FIG. 6 shows the interface observation results and element mapping of Example A1 of the present invention.
  • the bonding interface is observed at a magnification of 200,000 times, and the portion where the concentration of the active element is in the range of 35 at% to 70 at% is regarded as the active element oxide layer. It was measured.
  • the active element concentration (at%) was determined by measuring the P concentration (at%), the active element concentration (at%), and the O concentration (at%) with an EDS attached to a transmission electron microscope. The concentration of the active element when the sum of the concentration and the O concentration was 100 was used.
  • the thermal cycle test uses TSB-51, a thermal shock tester, Espec Corp., and -40 ° C x 5 minutes ⁇ ⁇ 150 ° C x 5 minutes 2000 cycles in the liquid phase (Fluorinert) for the power module substrate Carried out.
  • the bonding interface between the circuit layer (copper plate) and the ceramic substrate was observed, and the initial bonding rate and the bonding rate after the thermal cycle were evaluated.
  • the evaluation method was the same as in Example 1.
  • the thickness of the active element oxide layer, the thickness of the Cu—Al eutectic layer, and the composition analysis were performed using an EDS attached to a transmission electron microscope.
  • the Cu—Al eutectic layer is considered to be a Cu—Al eutectic layer where the Cu concentration is 60 at% to 90 at% when the composition is 100 at% of the combined Cu concentration and Al concentration, and the thickness is measured. did.
  • the composition of the Cu—Al eutectic layer was measured at 5 points and the average value thereof.
  • the observation results are shown in FIG.
  • the evaluation results are shown in Table 4.
  • a copper / ceramic bonded body in which a copper member made of copper or a copper alloy and a ceramic member made of nitride ceramics are securely bonded even under low temperature conditions. It was confirmed that it was possible to provide.
  • a power module substrate was prepared.
  • Table 6 shows the conditions for the heat treatment step.
  • sample B4 a paste made of Cu-7 mass% P-15 mass% Sn-10 mass% Ni powder and Ti powder was used as a brazing material and an active element.
  • the paste coating thickness was 80 ⁇ m.
  • the present invention example B1 to the present invention example B11 in which the thickness of the active element oxide layer is 5 nm or more and 220 nm or less has a high initial bonding rate even under relatively low temperature conditions. And the copper plate were securely joined.
  • examples B1-B6 and B9-B11 in which the phosphorus concentration in the active element oxide layer is in the range of 1.5 mass% to 10 mass% the bonding rate after the thermal cycle is as high as 90% or more, Bonding reliability was improved.
  • a copper / ceramic bonded body (power module substrate) in which a copper member made of copper or a copper alloy and a ceramic member made of alumina are reliably bonded even at a low temperature. It was confirmed that it was possible.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Ceramic Products (AREA)

Abstract

Une liaison cuivre/céramique formée par liaison d'un élément cuivre (22) comprenant du cuivre ou un alliage de cuivre à un élément céramique (11) comprenant de la céramique de nitrure, une couche d'oxyde d'élément actif (30) contenant un élément actif et de l'oxygène étant formée dans une interface liée de l'élément cuivre (22) et de l'élément céramique (11), et la couche d'oxyde de l'élément actif (30) possédant une épaisseur (t) de l'ordre de 5 à 220 nm.
PCT/JP2015/053792 2014-02-12 2015-02-12 Liaison cuivre/céramique et substrat de module de puissance WO2015122446A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP15749540.9A EP3106447B1 (fr) 2014-02-12 2015-02-12 Corps joint cuivre-céramique et substrat de module de puissance
CN201580008014.0A CN105980334B (zh) 2014-02-12 2015-02-12 铜‑陶瓷接合体及功率模块用基板
US15/117,935 US10103035B2 (en) 2014-02-12 2015-02-12 Copper-ceramic bonded body and power module substrate
KR1020167021843A KR101758586B1 (ko) 2014-02-12 2015-02-12 구리/세라믹스 접합체 및 파워 모듈용 기판

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2014-024410 2014-02-12
JP2014024410 2014-02-12
JP2014-052594 2014-03-14
JP2014052594A JP5825380B2 (ja) 2014-03-14 2014-03-14 銅／セラミックス接合体、及び、パワーモジュール用基板
JP2014136567A JP5828352B2 (ja) 2014-02-12 2014-07-02 銅／セラミックス接合体、及び、パワーモジュール用基板
JP2014-136567 2014-07-02

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JP2019081690A (ja) * 2017-10-27 2019-05-30 三菱マテリアル株式会社 接合体、及び、絶縁回路基板
JP2019085327A (ja) * 2017-11-02 2019-06-06 三菱マテリアル株式会社 接合体、及び、絶縁回路基板
EP3702341A4 (fr) * 2017-10-27 2021-07-21 Mitsubishi Materials Corporation Corps lié et carte de circuit imprimé isolée
US20230071498A1 (en) * 2020-03-13 2023-03-09 Mitsubishi Materials Corporation Heat sink integrated insulating circuit board

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019081690A (ja) * 2017-10-27 2019-05-30 三菱マテリアル株式会社 接合体、及び、絶縁回路基板
EP3702341A4 (fr) * 2017-10-27 2021-07-21 Mitsubishi Materials Corporation Corps lié et carte de circuit imprimé isolée
US11177186B2 (en) * 2017-10-27 2021-11-16 Mitsubishi Materials Corporation Bonded body and insulated circuit board
JP7124633B2 (ja) 2017-10-27 2022-08-24 三菱マテリアル株式会社 接合体、及び、絶縁回路基板
JP2019085327A (ja) * 2017-11-02 2019-06-06 三菱マテリアル株式会社 接合体、及び、絶縁回路基板
EP3705464A4 (fr) * 2017-11-02 2021-03-24 Mitsubishi Materials Corporation Corps joint et substrat de circuit isolant
US10998250B2 (en) 2017-11-02 2021-05-04 Mitsubishi Materials Corporation Bonded body and insulating circuit substrate
JP7230432B2 (ja) 2017-11-02 2023-03-01 三菱マテリアル株式会社 接合体、及び、絶縁回路基板
US20230071498A1 (en) * 2020-03-13 2023-03-09 Mitsubishi Materials Corporation Heat sink integrated insulating circuit board

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