WO2015106547A1 - 显示面板及其制备方法和显示装置 - Google Patents
显示面板及其制备方法和显示装置 Download PDFInfo
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- WO2015106547A1 WO2015106547A1 PCT/CN2014/081187 CN2014081187W WO2015106547A1 WO 2015106547 A1 WO2015106547 A1 WO 2015106547A1 CN 2014081187 W CN2014081187 W CN 2014081187W WO 2015106547 A1 WO2015106547 A1 WO 2015106547A1
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- Prior art keywords
- electrode
- touch
- film layer
- touch sensing
- display panel
- Prior art date
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 73
- 230000008569 process Effects 0.000 claims abstract description 61
- 239000007772 electrode material Substances 0.000 claims abstract description 32
- 238000002425 crystallisation Methods 0.000 claims abstract description 21
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 238000002955 isolation Methods 0.000 claims abstract 15
- 239000010408 film Substances 0.000 claims description 102
- 239000000758 substrate Substances 0.000 claims description 72
- 230000004888 barrier function Effects 0.000 claims description 61
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000002834 transmittance Methods 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229910003437 indium oxide Inorganic materials 0.000 claims description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 238000005192 partition Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims 4
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- 230000035945 sensitivity Effects 0.000 abstract description 9
- 230000009286 beneficial effect Effects 0.000 abstract description 2
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- 239000007769 metal material Substances 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 6
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Definitions
- the present invention relates to the field of display technologies, and in particular, to a display panel, a method of fabricating the same, and a display device. Background technique
- the integrated technology of the in-cell touch panel mainly includes on-ce touch and in-ce l 1 touch. Class, the difference between the two is that the touch panel function is embedded in the liquid crystal pixel, and the touch panel function is to embed the touch panel function between the color film substrate (also called color filter) and the polarizing plate. .
- the touch panel on the panel integrates the touch panel function into the color filter substrate; and the touch in the panel is the touch electrode assembly (including the touch scan electrode or the touch sensing electrode) in the touch panel.
- the plain glass ie, blank glass
- it is then embedded in the liquid crystal pixel after being bonded to the color filter substrate, or the touch electrode assembly in the touch panel is directly formed in the color film substrate or the array substrate.
- the in-panel touch panel with touch panel has the advantages of thinner panel and lighter weight, which can reduce manufacturing cost and panel thickness.
- a capacitive in-cell touch screen in which a touch electrode is formed in a color film substrate or an array substrate has appeared, for example: directly adding touch on an existing array substrate
- the electrodes are used to implement the touch function. That is, two strip electrodes intersecting each other on the surface of the array substrate are formed, and the two electrodes are usually formed by using IT0 (Ind ium T in Ox ides), in the two strip electrodes.
- IT0 Ind ium T in Ox ides
- R is the electrode resistance value
- p is the resistivity, determined by the material forming the electrode
- 1 is the electrode length
- s is the electrode cross-sectional area
- a is the electrode line width
- b is the electrode thickness.
- the resistance value R of the electrode when other parameters are unchanged, as the line width a of the strip electrode decreases, the resistance value R of the electrode will increase correspondingly, so that the delay of the signal during the touch process is increased, resulting in touch. The sensitivity is reduced.
- one solution that can be used at present is to increase the thickness b of the touch scan electrode and the touch sensing electrode.
- the thickness b of the electrode is simply increased, the process difficulty of manufacturing the touch electrode of the original design may be increased, for example, in the film formation process of forming the amorphous IT0 film layer, The thickness of the touch electrode is required to be large.
- I T0 When the temperature is 150 ° C or higher, I T0 will undergo crystallization reaction and partial crystallization will occur. Under normal circumstances, the etching process etches the amorphous I T0 film layer ( The effect is mainly wet etching. The effect is better than the etching effect on the crystallized IT0 film layer. IT 0 crystallization will cause the etching unevenness in the subsequent etching process, which leads to defects in the product.
- the technical problem to be solved by the present invention is to provide a display panel, a method for fabricating the same, and a display device, wherein the touch sensing electrode and/or the touch scan electrode have The smaller resistance can effectively reduce the delay of the signal during the touch process and ensure the yield of the product.
- a technical solution for solving the technical problem of the present invention is to provide a display panel, the display panel includes a touch scan electrode and a touch sensing electrode, and the touch scan Providing at least one barrier layer in one of the drawing electrode and the touch sensing electrode or at least one barrier layer in each of the touch scan electrode and the touch sensing electrode, the partition layer being provided with The touch scan electrode or the touch sensing electrode of the barrier layer is separated into at least two electrode sublayers, and the electrode sublayer is formed by using an electrode material capable of being transformed from an amorphous state to a polycrystalline state.
- the barrier layer serves to prevent the electrode material from undergoing a crystallization reaction prior to the crystallization process.
- the barrier layer is formed of a metal conductor material having a low electrical resistivity and a light transmittance of 60% or more.
- the electrode material comprises a combination of any one or more of indium oxide, indium tin oxide, indium oxide, and oxidation.
- the metal conductor material comprises any one of Cr, W, T i, Ta, Mo, AlNd, Cu, Ag, Al, or an alloy of any of the above metals.
- a sum of thicknesses of all of the electrode sub-film layers and the barrier film layer constituting the touch scan electrode or the touch sensing electrode is at the touch scan electrode or the touch sensing electrode within a preset thickness range, the predetermined thickness ranges from 800 to 6000 people.
- the total number of layers of the barrier layer is less than or equal to 5, the thickness of the barrier layer ranges from 10 to 50 persons, and the thickness of the electrode sublayer ranges from 400 to 1 000.
- the touch scan electrodes and the touch sensing electrodes are strip-shaped, and the touch scan electrodes and the touch sensing electrodes intersect each other differently.
- the display panel includes an array substrate, and the touch scan electrodes and the touch sensing electrodes are disposed together in the array substrate; or
- the display panel includes a color filter substrate and an array substrate, and the touch scan electrodes are disposed on the color filter substrate or the array substrate, and the touch sensing electrodes are disposed on the array substrate or the color filter substrate. Or the touch scan electrode and the touch sensing electrode are disposed together in the color film substrate or the array substrate.
- the present invention also provides a display device comprising the above display panel.
- the invention further provides a method for preparing a display panel, comprising the steps of forming a touch scan electrode and a touch sensing electrode, forming the touch scan electrode and/or the The steps of the touch sensing electrode include:
- the touch scan electrode and/or the touch sense electrode formed of an electrode material capable of being transformed from an amorphous state to a polycrystalline state is crystallized.
- the method further comprises: at the electrode sub-film layer away from the substrate And continuing to sequentially form the barrier film layer and the amorphous electrode sub-film layer until the sum of the thicknesses of all the amorphous electrode sub-membrane layers and the barrier film layer constituting the touch scan electrode or the touch sensing electrode
- the predetermined thickness range of the touch scan electrode or the touch sensing electrode is 800-6000.
- the substrate is a color film substrate that can be used to form a color film layer or an array substrate that can be used to form a thin film transistor array.
- the amorphous electrode sub-film layer is formed by a sputter deposition process, and the deposition temperature of the sputter deposition process ranges from 20 to 30 ° C; forming the separation film layer by using a sputter deposition process, The deposition temperature of the sputter deposition process ranges from 1 0 to 50 °C.
- the touch scanning electrode and/or the touch sensing electrode formed by an electrode material capable of being transformed from an amorphous state to a polycrystalline state is crystallized by an annealing process.
- the display panel can effectively reduce the signal during the touch process by providing a thinner barrier layer in the thick touch electrodes (including the touch scan electrodes and/or the touch sensing electrodes).
- the delay thereby improving the sensitivity of the touch; and preventing the electrode material for forming the touch electrode from being crystallized in the film forming process, thereby improving the etching uniformity of the etching process, thereby improving the product yield.
- DRAWINGS 1 is a schematic structural diagram of a touch sensing electrode/touch scan electrode according to Embodiment 1 of the present invention
- 2A-2E are schematic diagrams showing a process of forming the touch sensing electrode/touch scan electrode of FIG. 1;
- 2A is a cross-sectional view showing the formation of an electrode sub-membrane layer over a substrate
- FIG. 2B is a cross-sectional view showing the formation of a barrier film layer over the substrate of FIG. 2A;
- FIG. 2C is a cross-sectional view of the electrode sub-film layer formed over the substrate of FIG. 2B;
- FIG. 2D is a cycle formed above the substrate of FIG. 2C to a predetermined thickness range.
- 2E is a cross-sectional view showing the touch electrode formed by the patterning process of FIG. 2D; wherein: 1 - substrate; 20 - electrode sub-film layer; 2-electrode sub-layer; 30-interrupted film layer; detailed description
- the present invention provides a display panel including a touch scan electrode and a touch sensing electrode, wherein at least one barrier layer or the touch scan electrode is disposed in one of the touch scan electrode and the touch sensing electrode.
- the touch sensing electrodes are respectively provided with at least one barrier layer, and the barrier layer separates the touch scan electrodes or the touch sensing electrodes provided with the barrier layer into at least two electrode sublayers
- the electrode sublayer is formed of an electrode material capable of being transformed from an amorphous state to a polycrystalline state, and the barrier layer is used to prevent the electrode material from undergoing a crystallization reaction before the crystallization process.
- the present invention also provides a display device comprising the above display panel.
- the invention further provides a method for preparing a display panel, comprising the steps of forming a touch scan electrode and a touch sensing electrode, and the steps of forming the touch scan electrode and/or the touch sensing electrode include: Forming an amorphous electrode sub-membrane layer, a barrier film layer, and an amorphous electrode sub-film layer on the substrate;
- the touch scan electrodes and/or the touch sensing electrodes are crystallized. Example 1
- the embodiment provides a display panel including a touch scan electrode and a touch sensing electrode.
- the touch scan electrode and the touch sensing electrode are provided with at least one barrier layer or a touch scan electrode and a touch sensing electrode.
- Each of the two is provided with at least one barrier layer, and the barrier layer separates the touch scan electrode or the touch sensing electrode provided with the barrier layer into at least two electrode sublayers, and the electrode sublayer can be converted from an amorphous state to an A polycrystalline electrode material is formed, and the barrier layer is used to prevent the electrode material from undergoing a crystallization reaction before the crystallization process.
- the improvement of the touch electrode assembly in the embodiment includes three solutions: the barrier layer may be disposed only in any one of the touch scan electrode and the touch sensing electrode, or the touch scan electrode and the touch may be simultaneously
- the barrier layer may be disposed only in any one of the touch scan electrode and the touch sensing electrode, or the touch scan electrode and the touch may be simultaneously
- Each of the control sensing electrodes is provided with a barrier layer for blocking the crystallization reaction which may occur in the film forming process of the electrode material capable of forming the touch scan electrode and the touch sensing electrode from amorphous to polycrystalline.
- the formed touch scan electrode and the touch sense electrode have a small resistance value.
- the touch electrodes can be used to refer to touch scan electrodes and/or touch sense electrodes.
- the touch electrode in this embodiment includes an electrode sub-layer 2 , a barrier layer 3 , an electrode sub-layer 2 , a barrier layer 3 , and an electrode sub-layer 2 , which are sequentially disposed above the substrate 1 , due to thick touch
- the barrier layer 3 is disposed in the control electrode at intervals, so that the crystallization reaction of the electrode material in the touch electrode film formation process in the preparation process of forming the touch electrode can be effectively prevented.
- the barrier layer 3 is preferably formed of a metal conductor material having a low resistivity and a light transmittance of >60%.
- the electrode material forming the electrode sub-layer 2 includes Indium Zinc Oxide (IZ0), Indium Tin Oxide (ITO), Indium Oxide (ln 2 0 3 ), and oxidation.
- IZ0 Indium Zinc Oxide
- ITO Indium Tin Oxide
- ln 2 0 3 Indium Oxide
- ZnO zinc oxide
- the metal conductor material includes any one of Cr, W, Ti, Ta, Mo, AlNd, Cu, Ag, Al, or an alloy of any of the above metals.
- the thickness of the touch scan electrode and/or the touch sensing electrode ranges from 800 to 6000, preferably from 2000 to 5000.
- the total number of layers of the barrier layer 3 is 5 or less, the thickness of the barrier layer 3 ranges from 10 to 50 persons, and the thickness of the electrode sub-layer 2 ranges from 400 to 1,000 persons.
- the total number of layers of the barrier layer 3 increases, the blocking effect on the crystallization of the electrode material is better, but the transmittance of the touch electrode is correspondingly lowered. Therefore, in practical applications, the number of layers of the barrier layer can be reasonably set according to the thickness of the touch electrode and the transmittance.
- the metal material forming the barrier layer 3 is a commonly used sputtering metal material, for example, Mo, AlNd, Cu, Ag, Al, etc.
- the transmittance of these metal materials is about 50 people.
- about 70% considering that the transmittance of the electrode material (such as IT0) itself is about 80%, the addition of a barrier layer of 50 or less has little effect on the transmittance of the final touch electrode.
- the transmittance data of several metal materials at a certain thickness are as follows: Mo: 50A, 64%; AlNd: 50A, 64.7%; Al: 50A, 77.8%.
- the touch scan electrodes and the touch sensing electrodes are strip-shaped, and the touch scan electrodes and the touch sensing electrodes intersect each other differently.
- the display panel may be a liquid crystal display panel, the display panel includes a color film substrate and an array substrate, the color film substrate includes a color film layer, and the array substrate includes a plurality of thin film transistors (Thin Film Transistors).
- the touch scan electrodes may be disposed on the color filter substrate or the array substrate, and the touch sensing electrodes may be disposed on the array substrate or the color filter substrate; or the touch scan electrodes and the touch may be The sensing electrodes are commonly disposed in the color film substrate or the array substrate.
- the touch electrode can be either an on-cell touch method or a capacitive in-cell touch method.
- the working process of the capacitive touch mode is: when the touch scan signal is loaded on the touch scan electrode, The voltage signal of the touch sensing electrode is detected by the sensing capacitor.
- the electric field of the human body acts on the sensing capacitor, so that the capacitance value of the sensing capacitor changes, thereby changing the touch.
- the voltage signal coupled by the sensing electrode is controlled, and the position of the contact can be determined according to the change of the voltage signal.
- the embodiment further provides a method for preparing a display panel, including the steps of forming a touch scan electrode and a touch sensing electrode, wherein the steps of forming the touch scan electrode and/or the touch sensing electrode include:
- Step S1 An amorphous electrode sub-membrane layer, a barrier film layer, and an amorphous electrode sub-film layer are sequentially formed on the substrate.
- a film formation process for forming a touch electrode is mainly formed by a film formation process, where an amorphous electrode sub-film layer is formed by using an electrode material capable of converting from an amorphous state to a polycrystalline state.
- amorphous ITO a-ITO
- a-ITO amorphous ITO
- the substrate is a color film substrate which can be used to form a color film layer or an array substrate which can be used to form a thin film transistor array; it is easy to understand that the substrate can also be plain glass.
- Forming an amorphous electrode sub-film layer, using a sputter deposition process, the deposition temperature of the sputter deposition process is in the range of 20-30 ° C; forming a barrier film layer, using a sputter deposition process, the deposition temperature of the sputter deposition process The range is 10-50 °C.
- the amorphous conventional IT0 is sputter-deposited at a normal temperature (for example, 25 ° C) using a well-established conventional process (the process used herein is not specifically limited).
- a-ITO a-ITO
- the electrode sub-film layer 20 may have a thickness ranging from 400 to 1000 people.
- a thin metal material is sputter deposited on the substrate 1 forming the electrode sub-film layer 20 at a normal temperature (10-50 ° C) to form a barrier film layer 30, which is a barrier layer.
- the thickness of 30 is in the range of 50 A or less (for example, 10-50 A) to prevent the crystallization of the electrode sub-film layer 20.
- the metal material is generally formed at a high temperature (200-40 (TC)).
- TC high temperature
- filming the metal material at a normal temperature prevents crystallization of the electrode layer 20 which is easy to crystallize, so that the electrode film is formed.
- the resistance of layer 20 is not affected.
- an amorphous electrode sub-film layer 20 is again sputter deposited, and the electrode sub-film layer 20 may have a thickness ranging from 400A to 1000 persons.
- the thickness of the touch electrode can be increased to lower the resistance value of the touch control electrode.
- the method further comprises: away from the substrate
- the partition film layer and the amorphous electrode sub-film layer are sequentially formed above the electrode sub-film layer until the sum of the thicknesses of all the amorphous electrode sub-membrane layers and the barrier film layer constituting the touch scan electrode or the touch sensing electrode reaches
- the preset thickness range of the touch scan electrode or the touch sensing electrode ranges from 800 to 6000, preferably from 2000 to 5000.
- the thickness of the barrier film layer 30 can still be less than 50A; further, it can continue to be above the barrier film layer 30, under normal temperature environment, the third splash An amorphous electrode sub-film layer 20 is deposited, and the electrode sub-film layer 20 may have a thickness ranging from 400 to 1000.
- the number of cycles of sequentially forming the electrode sub-film layer 20 and the barrier film layer 30 on the substrate 1 is not limited, and may be preset to a thickness according to the application and design requirements of the touch electrode. The scope is fine. Usually, since the thickness of the electrode sub-film layer 20 can still range from 400A to 1000, preferably the total number of layers of the barrier layer is 5, the preset thickness ranges from 800 to 6,000, preferably from 2,000 to 5,000.
- Step S2 patterning the amorphous electrode sub-film layer and the barrier film layer to form a pattern including a touch scan electrode or a touch sensing electrode.
- the patterning process includes a photolithography process and an etching process, wherein the photolithography process refers to a process of forming a pattern using a photoresist, a mask, an exposure machine, or the like, including a process of exposure, development, and the like.
- the etching process may use wet etching or dry etching, and multiple or single etching may be performed in the etching process to form a pattern including a pre-designed touch electrode.
- the amorphous electrode sub-membrane layer and the barrier film layer are patterned.
- the process forms a pattern including a touch scan electrode or a touch sense electrode.
- the line width of the touch scan electrode or the touch sensing electrode can be small, and the thickness of the touch scan electrode or the touch sensing electrode is large, and the touch scan electrode can be ensured according to the resistance law.
- the resistance value of the touch sensing electrode does not increase greatly, ensuring the timeliness of the transmission of the scanning signal and the voltage signal, thereby ensuring the sensitivity of the touch.
- Step S3 crystallizing the touch scan electrode and/or the touch sensing electrode formed of the electrode material capable of being transformed from an amorphous state to a polycrystalline state.
- an annealing process is used to crystallize the touch scan electrode and/or the touch sensing electrode formed of an electrode material capable of being transformed from an amorphous state to a polycrystalline state, that is, the substrate of step S2 is completed.
- 1 Heat treatment process after being exposed to high temperature for a period of time and then slowly cooling.
- the electrode material in each of the electrode sub-film layers capable of being transformed from the amorphous state to the polycrystalline state can be simultaneously changed from an amorphous state to a polycrystalline state by using a single annealing process.
- the touch electrode of the embodiment reduces the touch by replacing the thinner ( ⁇ 1000A) electrode material in the prior art with a thicker electrode material (the range of 800-600 ⁇ , preferably 2000-5000A).
- the resistance value of the electrode thus reducing the delay of the signal, thereby improving the sensitivity of the touch; and, by using a structure in which a thin barrier layer is provided in the electrode material, the transition from the amorphous state to the multi-state is prevented.
- the crystalline electrode material crystallizes during the film formation process, thereby improving the etching uniformity of the etching process, thereby improving the product yield.
- Example 2 Example 2:
- This embodiment provides a display panel. Compared with the first embodiment, the difference between the embodiment is that the display panel in the embodiment may be 0LED (Organic).
- Light-Emitting Diode Organic Light Emitting Diode
- the display panel may only include the array substrate, and the touch scan electrode and the touch sensing electrode are collectively disposed in the array substrate; when the OLED in the display panel is a white OLED (White 0 LED, referred to as In the case of WOLED), the display panel can be an array substrate integrated with a color film layer (Color filter on Ar ray (COA for short), the touch scan electrode and the touch sensing electrode are disposed together in the array substrate.
- COA Color filter on Ar ray
- the structure of the touch electrode in the embodiment is the same as that of the touch electrode in the first embodiment.
- the working principle of the touch electrode is the same as that in the first embodiment.
- the method for preparing the touch electrode can also be the same as the preparation method in the first embodiment. The same, no longer repeat here.
- Example 3
- the embodiment provides a display device using the display panel of the first embodiment or the second embodiment.
- the display device may be: a liquid crystal panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, etc., any product or component having a display function.
- the display device Since the display panel with high touch sensitivity and high yield is used, the display device has better touch quality and display quality.
- the display panel of the present invention by providing a thinner barrier layer in the thicker touch electrode, the delay of the signal during the touch process can be effectively reduced, thereby improving the sensitivity of the touch and preventing the film formation process.
- the crystallization of the electrode material for forming the touch electrode improves the etching uniformity of the etching process, thereby improving the yield of the product.
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Position Input By Displaying (AREA)
- Push-Button Switches (AREA)
Abstract
Description
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US14/428,478 US9542025B2 (en) | 2014-01-16 | 2014-06-30 | Display panel, manufacturing method of the same, and display device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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CN201410021587.4 | 2014-01-16 | ||
CN201410021587.4A CN103777814B (zh) | 2014-01-16 | 2014-01-16 | 一种显示面板及其制备方法和显示装置 |
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WO2015106547A1 true WO2015106547A1 (zh) | 2015-07-23 |
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PCT/CN2014/081187 WO2015106547A1 (zh) | 2014-01-16 | 2014-06-30 | 显示面板及其制备方法和显示装置 |
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US (1) | US9542025B2 (zh) |
CN (1) | CN103777814B (zh) |
WO (1) | WO2015106547A1 (zh) |
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CN103777814B (zh) * | 2014-01-16 | 2017-06-16 | 京东方科技集团股份有限公司 | 一种显示面板及其制备方法和显示装置 |
US9927939B2 (en) | 2014-08-13 | 2018-03-27 | Samsung Display Co., Ltd. | Touch panel and display apparatus including the same |
KR102312314B1 (ko) * | 2015-01-28 | 2021-10-13 | 삼성디스플레이 주식회사 | 터치 센서 장치 및 그 제조 방법 |
CN107482039B (zh) * | 2017-08-03 | 2020-07-24 | 京东方科技集团股份有限公司 | 一种柔性触控母板及制备方法、柔性触控基板、触控面板 |
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CN103777814A (zh) * | 2014-01-16 | 2014-05-07 | 京东方科技集团股份有限公司 | 一种显示面板及其制备方法和显示装置 |
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- 2014-06-30 WO PCT/CN2014/081187 patent/WO2015106547A1/zh active Application Filing
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JP2004268311A (ja) * | 2003-03-06 | 2004-09-30 | Dainippon Printing Co Ltd | 汚れ付着防止高耐擦過性フィルム |
CN101476109A (zh) * | 2008-01-02 | 2009-07-08 | 甘国工 | 柔性高阻多层透明导电膜的制备方法 |
JP2012012687A (ja) * | 2010-07-02 | 2012-01-19 | Kitagawa Ind Co Ltd | 透明導電フィルム及びその製造方法並びにタッチパネル |
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CN103777814A (zh) * | 2014-01-16 | 2014-05-07 | 京东方科技集团股份有限公司 | 一种显示面板及其制备方法和显示装置 |
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CN103777814A (zh) | 2014-05-07 |
US20160026310A1 (en) | 2016-01-28 |
CN103777814B (zh) | 2017-06-16 |
US9542025B2 (en) | 2017-01-10 |
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